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Name  Hoang, Duc QuangEmployer  Faculty of Civil Engineering, Ton Duc Thang UniversityPosition  ResearcherLanguages Vietnamese, EnglishAddress19 Nguyen Huu Tho, TanPhong Ward, District 7, HoChiMinh City, VietnamEmailhoangducquang@tdtu.edu.vn or ducquang78@gmail.comTell  (\+84\) 972 352 640
# HOANG, DUC QUANG
 10 December 2018  / [Comments](/hoang-duc-quang/#comments)
**RESEARCH INTERESTS**
* 2D wide bandgap nanomaterials, i.e. hBN nanowalls, CVD diamond, graphene;
* Magnetic permalloy nanomaterials, i.e.NiFe/CoFe thin films, nanowires, bilayers;
* Ceramic perovskite materials, i.e. LaSrMnO, LaSrPbMnO, PrBaMnO;
* Exchange biased bilayers, i.e. IrMn/CoFe;
* Magnetic spin\-valves and transistors, i.e. IrMn/CoFe, IrMn/CoFe/Cu/CoFe, FeMn/CoFe/AlOx/CoFe and FeMn/CoFe/MgO/CoFe;
* Nano\-deposition techniques, i.e. RF/DC/AC sputtering\&pulsed laser depositions;
* Nano\-characterization techniques, i.e. FTIR/Raman/EELS/EDX/SIMS/EXAFS spectroscopies, T/STEM (BF, DF, ED, HR\-TEM \& Lorentz TEM), SQUID, ac susceptibility; VSM and EPR/ESR;
* Nano\-fabrication techniques, i.e. ion\-milling, patterning and irradiation with FIB\-SEM;
* TEM sample preparation techniques, i.e. FIBand gentle ion milling TEM x\-sections;

**ACADEMIC QUALIFICATIONS**
* Ph.D. in Materials Physics, Hasselt University \& IMEC, Belgium (2017\);
* MSc. by Research in Condensed Matter Physics, University of Glasgow, UK (2011\);
* MSc. in Solid State Physics, Chungbuk National University, South Korea (2005\);
* B.S. in Solid State Physics, Hanoi National University, Vietnam (2000\);

**PROFESSIONAL ACCOMPLISHMENTS**
**A. PEER\-REVIEWED ARTICLES**
* NAFOSTED\-2020 – National Foundation for Science and Technology Development, Vietnam (Key\-member), *Studying some ferromagnetic materials for spintronic applications*(04/2020 – 04/2022\): 31 000 USD.
* NAFOSTED\-2019 – National Foundation for Science and Technology Development, Vietnam (PI), *Domain wall propagation in domain wall trap Ni80Fe20 nanostructures*(09/2019 – 09/2021\): 30 000 USD.
* BOF2019 \| VISITING FELLOWS \| BOF19KV03, Hasselt University, Belgium (PI), *2D hexagonal boron nitride nanostructures for water cleaning application* (01/2019 – 03/2019\): 5 950 EUR.
* Hasselt University \&IMEC, Belgium (PI), *Nucleation and growth mechanisms of sputtered hexagonal boron nitride nanowalls* (04/2012 – 03/2016\): 119 200 EUR.
* SUPA University of Glasgow, UK (PI), *A study of tailored domain wall geometries in ferromagnetic nanowires using Lorentz microscopy* (08/2007 – 12/2011\): 93 800 GBP.
* BK21 Chungbuk National University\| KIST\| Samsung, Korea (Member), *CIP\-giant magneto\-resistance effects in spin\-valve structures* (09/2005 – 07/2007\): 34 000 USD.
* Tohoku University, Japan (Member): *Exchange\-bias effects in ferromagnetic/antiferromagnetic thin films* (07 – 11/2006\): 7000 USD

B. **RESEARCH PROJECTS**
* D.Q. Hoang, V.A. Dao, D.H. Nguyen, D.T. Ngo, K.J. Sankaran, P. Pobedinskas, M. K. Van Bael, J. Verbeeck, S.S. Nicley and K. Haenen,*Dynamic processes of B and N atoms at the early stage of thin film growth in a unbalanced RF sputtering*, J. Appl. Phys. (2020\) \[in preparation].
* D. Q. Hoang, X. H. Cao, H. T. Nguyen and V. A. Dao, *Single defects inducing the asymmetric degree of the transverse domain walls created in Ni80Fe20 nanowires*,Appl. Phys. Lett. (2020\) \[to be submitted].
* D.Q. Hoang, X. H. Cao, H. T. Nguyen and V. A. Dao,*Single domain wall propagation in 2D magnetic nano\-traps under field pulses*, J. Phys. Soc. Jpn. (2020\) \[submitted].
* D.Q. Hoang, X. H. Cao, H. T. Nguyen and V. A. Dao, *Creation and propagation of a single magneticdomain wall in 2D nanotraps with an injection square pad*, Nanotechnology(2020\) \[submitted].
* D. M. Hoat, D. Q. Hoang, M. Naseri, J. F. Rivas\-Silvae, A. I. Kartamyshev and G. H. Cocoletzi, *Computational prediction of the spin\-polarized semiconductor equiatomic quaternary Heusler compound MnVZrP as spin\-filters*, RSC Adv. (2020\) \[accepted].
* D.M. Hoat, D.Q. Hoang, M. Naserid, R.P. Pérez, N.T.T. Binh, J. F. Rivas\-Silva, G.H. Cocoletzi, *Newequiatomic quaternary Heusler compounds without transition metals KCaBX (X \= S and Se): Robusthalf\-metallic and optical properties,* J. Mol. Graph. Model. **99** (2020\) 107642\.
* A.N. Ulyanov, D.Q. Hoang, N. Kuznetsova and S.C. Yu, *Negative imaginary component of AC magnetic susceptibility, metastable states, and magnetic relaxation in La0\.6Sr0\.35MnTi0\.05O3*, Funct. Mater. Lett.**13** (2020\) 2050023\.
* V. T. Vu, H. Nguyen, D. Q. Hoang, T. P. Dao, C. V. Nguyen, H. V. Phuc, N.N. Hieu, H. Luong, H. Tong and D. K. Pham, *The characteristics of defective ZrS2monolayers adsorbed various gases on S\-vacancies: Afirst\-principles study*, Superlattice. Microst. **140** (2020\) 106454\.
* B. D. Mai, H. T. Nguyen and D.Q. Hoang, *Influence of cellulose nanoparticles on structure and dielectricproperties of ferroelectrics*, Mater. Trans. **60**(2019\) 2499\.
* B.D. Mai, H.T. Nguyen and D.Q. Hoang, *A novel composite from nanodispersed silica and an organicferroelectric of diisopropylammonium bromide: preparation, characterization and dielectric properties*, Mater. Trans. **60** (2019\) 2132\.
* D.Q. Hoang, V.N.M. Ho, X.H. Cao, H. T. Nguyen and V.A. Dao, *Tailoring sidewall profiles of magnetictunnel junctions fabricated with various etching conditions*, Jpn. J. Appl. Phys. **58** (2019\) 093001\.
* V.N. M. Ho, L.D.A. Ho, M.T. Tran, X.H. Cao, V. A. Dao, D.H. Tong, D. T. Ngo, D.Q. Hoang, *Exploringcharacteristics of the corner sections of a domain wall trap nanostructure with the two\-field directionmethod*, RSC Adv. **8** (2018\) 41828\.
* L.D.A. Ho, M.T. Tran, X.H. Cao, V.A. Dao, D.T. Ngo, D.Q. Hoang,*Field\-driven single domainwall motion in ferromagnetic nanowires*, RSC Adv. **8** (2018\) 14539\.
* D.Q. Hoang, M.T. Tran, X.H. Cao, D.T. Ngo,*The effect of edge\-roughness of magneticnanowires on the degree of asymmetry in transverse domain walls*, RSC Adv. **7** (2017\) 49188\.
* D.Q. Hoang, S. Korneychuk, K.J. Sankaran, P. Pobedinskas, S. Drijkoningen, S. Turner, M.K.Van Bael, J. Verbeeck, S.S. Nicley, K. Haenen, *Direct nucleation of hexagonal boron nitride ondiamond: Crystalline properties of hBN nanowalls*, Acta Mater. **127** (2017\) 17\.
* K.J. Sankaran, D.Q. Hoang, S. Korneychuk, S. Kunuku, J.P. Thomas, P. Pobedinskas, S.Drijkoningen, M.K. Van Bael, J. D’Haen, J. Verbeeck, K.C. Leou, K.T. Leung, I.N. Lin, K. Haenen,*Hierarchical hexagonal boron nitride nanowall\-diamond nanorod heterostructures enhanceoptoelectronic performance*, RSC Adv. **6** (2016\) 90338\.
* K.J. Sankaran, D.Q. Hoang, K. Srinivasu, S. Korneychuk, S. Turner, S. Drijkoningen, P. Pobedinskas, J. Verbeeck, K.C. Leou, I.N. Lin, K. Haenen, *Engineering the interface characteristicson the enhancement of field electron emission properties of vertically aligned hexagonal boronnitride nanowalls*, Phys. Status Solidi A **213** (2016\) 2654\.
* D.Q. Hoang, P. Pobedinskas, S.S. Nicley, S. Turner, S.D. Janssens, M.K. Van Bael, J. D’Haen, K.Haenen, *Elucidation of the growth mechanism of sputtered 2D hexagonal boron nitride nanowalls*,Cryst. Growth Des. **16** (2016\) 3699\.
* K.J. Sankaran, D.Q. Hoang, K. Srinivasu, S. Korneychuk, S. Turner, P. Pobedinskas, S. Drijkoningen,M.K. Van Bael, J. D’Haen, J. Verbeeck, K.C. Leou, I. N. Lin, K. Haenen, *Enhancedoptoelectronic performances of vertically aligned hexagonal boron nitride nanowalls nanocrystallinediamond heterostructures*, Sci. Rep. **6** (2016\) 29444\.
* D.C. Leitao, R.J. Macedo, A.V. Silva, D.Q. Hoang, D.A. MacLaren, S. McVitie, S. Cardoso,P.P. Freitas, *Optimization of exposure parameters for lift\-off process of sub\-100 features using anegative tone electron beam resist*, 12th IEEE\-NANO (2012\): DOI: 10\.1109/NANO.2012\.63219452/6
* A.N. Ulyanov, H.D. Quang, N.E. Pismenova, S. C. Yu and G.G. Levchenko, Pr0\.7Ca0\.15Ba0\.15MnO3manganite: *Electron paramagnetic resonance, conductivity and susceptibility*, Solid State Commun.**152** (2012\) 1556\.
* D.T. Ngo, H.G. Duong, H.H. Nguyen, C. Nguyen, M. Basith, D.Q. Hoang, *The microstructure,high performance magnetic hardness and magnetic after\-effect of an* *a**\-FeCo/Pr2Fe14Bnanocomposite magnet with low Pr concentration*, Nanotech. **20** (2009\) 165707\.
* A.N. Ulyanov, H.D. Quang, K.W. Lee, S.C. Yu, N.H. Sinh, Y.M. Kang, S.I. Yoo, *Magneticrelaxation behavior in Nd0\.5Sr0\.5MnO3: observation of negative imaginary component of acmagnetic susceptibility*, IEEE Trans. Magn. **44** (2008\) 3060\.
* H.D. Quang, N.H. Sinh, S.K. Oh, T.N. Huynh, J. Zidanic, N.T. Hien, S. C. Yu, *Reactionmechanism of chemical elements (Co, Fe, Mn) existing in spin valves containing oxide layers*,Jpn. J. Appl. Phys. **45** (2006\) 088\.
* H.D. Quang, C.X. Huu, S.K. Oh, V.S. Dang, N.H. Sinh, S.C. Yu, *Magneto\-transport properties of magnetic tunneling transistors at low and room temperatures*, Nanotech. **17** (2006\) 3359\.
* H.D. Quang, N.H. Sinh, S.K. Oh, N.T. Hien, S.C. Yu, *Micro\-structural change and hightemperature properties of constituent elements (Fe, Co, Mn, Cu) in spin valves containing oxidelayers*, J. Phys. D: Appl. Phys. **38** (2005\) 3560\.
* A.N. Ulyanov, H.D. Quang, N.E. Pismenova, S.C. Yu, *EPR and resistivity study ofPr0\.7Ba0\.3MnO3 manganite*, IEEE Trans. Magn. **41** (2005\) 2745\.
* H.D. Quang, N.T. Hien, S.K. Oh, N.H. Sinh, S.C. Yu, *Chemical properties and GMR improvementof specular spin valves with nano\-oxide layers, formed in ambient mixed gases*, J. Phys. D:Appl. Phys. **37** (2004\) 3290\.
* A.N. Ulyanov, H.D. Quang, M. Vasundhara, C. Nguyen, S.C. Yu, *Adiabatic polaron transportin La0\.9Pb0\.1MnO3 manganites*, Phys. Status Solidi B **241** (2004\) 1482\.
* H.D. Quang, N.T. Hien, S.K. Oh, S.C. Yu, *Effects of mixed gases on characteristics of specularspin\-valves containing oxide layers*, Phys. Status Solidi A **201** (2004\) 3129\.
* M.H. Phan, S.B. Tian, D.Q. Hoang, S.C. Yu, C. Nguyen, A.N. Ulyanov, *Large magnetic\-entropychange above 300 K in CMR materials*, J. Magn. Magn. Mater. **258**\-**259** (2003\) 309\.
* Phòng D005, VP Khoa Kỹ thuật công trình
* (84\-028\) 37755036
* [khoaktct@tdtu.edu.vn](mailto:khoaktct@tdtu.edu.vn)
## KHOA KỸ THUẬT CÔNG TRÌNH
TRƯỜNG ĐẠI HỌC TÔN ĐỨC THẮNG

Số 19 Nguyễn Hữu Thọ, Phường Tân Phong, Quận 7, TP. Hồ Chí Minh, Việt Nam. Copyright ©  Ton Duc Thang University

HOANG, DUC QUANG | Khoa Kỹ thuật công trình Skip to main content x Đại học Tôn Đức Thắng  English Khoa kỹ thuật công trình Main navigation VI Giới thiệu Giáo dục Khoa học công nghệ Quốc tế hóa Tuyển sinh Search Name Hoang, Duc Quang Employer Faculty of Civil Engineering, Ton Duc Thang University Position Researcher Languages Vietnamese, English Address 19 Nguyen Huu Tho, TanPhong Ward, District 7, HoChiMinh City, Vietnam Email hoangducquang@tdtu.edu.vn or ducquang78@gmail.com Tell (+84) 972 352 640 HOANG, DUC QUANG 10 December 2018 /  Comments RESEARCH INTERESTS  2D wide bandgap nanomaterials, i.e. hBN nanowalls, CVD diamond, graphene;  Magnetic permalloy nanomaterials, i.e.NiFe/CoFe thin films, nanowires, bilayers;  Ceramic perovskite materials, i.e. LaSrMnO, LaSrPbMnO, PrBaMnO;  Exchange biased bilayers, i.e. IrMn/CoFe;  Magnetic spin-valves and transistors, i.e. IrMn/CoFe, IrMn/CoFe/Cu/CoFe, FeMn/CoFe/AlOx/CoFe and FeMn/CoFe/MgO/CoFe;  Nano-deposition techniques, i.e. RF/DC/AC sputtering&pulsed laser depositions;  Nano-characterization techniques, i.e. FTIR/Raman/EELS/EDX/SIMS/EXAFS spectroscopies, T/STEM (BF, DF, ED, HR-TEM & Lorentz TEM), SQUID, ac susceptibility; VSM and EPR/ESR;  Nano-fabrication techniques, i.e. ion-milling, patterning and irradiation with FIB-SEM;  TEM sample preparation techniques, i.e. FIBand gentle ion milling TEM x-sections;  ACADEMIC QUALIFICATIONS  Ph.D. in Materials Physics, Hasselt University & IMEC, Belgium (2017);  MSc. by Research in Condensed Matter Physics, University of Glasgow, UK (2011);  MSc. in Solid State Physics, Chungbuk National University, South Korea (2005);  B.S. in Solid State Physics, Hanoi National University, Vietnam (2000);  PROFESSIONAL ACCOMPLISHMENTS  A. PEER-REVIEWED ARTICLES  NAFOSTED-2020 – National Foundation for Science and Technology Development, Vietnam (Key-member), Studying some ferromagnetic materials for spintronic applications (04/2020 – 04/2022): 31 000 USD.  NAFOSTED-2019 – National Foundation for Science and Technology Development, Vietnam (PI), Domain wall propagation in domain wall trap Ni 80 Fe 20 nanostructures (09/2019 – 09/2021): 30 000 USD.  BOF2019 | VISITING FELLOWS | BOF19KV03, Hasselt University, Belgium (PI), 2D hexagonal boron nitride nanostructures for water cleaning application (01/2019 – 03/2019): 5 950 EUR.  Hasselt University &IMEC, Belgium (PI), Nucleation and growth mechanisms of sputtered hexagonal boron nitride nanowalls (04/2012 – 03/2016): 119 200 EUR.  SUPA University of Glasgow, UK (PI), A study of tailored domain wall geometries in ferromagnetic nanowires using Lorentz microscopy (08/2007 – 12/2011): 93 800 GBP.  BK21 Chungbuk National University| KIST| Samsung, Korea (Member), CIP-giant magneto-resistance effects in spin-valve structures (09/2005 – 07/2007): 34 000 USD.  Tohoku University, Japan (Member): Exchange-bias effects in ferromagnetic/antiferromagnetic thin films (07 – 11/2006): 7000 USD  B. RESEARCH PROJECTS  D.Q. Hoang, V.A. Dao, D.H. Nguyen, D.T. Ngo, K.J. Sankaran, P. Pobedinskas, M. K. Van Bael, J. Verbeeck, S.S. Nicley and K. Haenen, Dynamic processes of B and N atoms at the early stage of thin film growth in a unbalanced RF sputtering , J. Appl. Phys. (2020) [in preparation].  D. Q. Hoang, X. H. Cao, H. T. Nguyen and V. A. Dao, Single defects inducing the asymmetric degree of the transverse domain walls created in Ni 80 Fe 20 nanowires ,Appl. Phys. Lett. (2020) [to be submitted].  D.Q. Hoang, X. H. Cao, H. T. Nguyen and V. A. Dao, Single domain wall propagation in 2D magnetic nano-traps under field pulses , J. Phys. Soc. Jpn. (2020) [submitted].  D.Q. Hoang, X. H. Cao, H. T. Nguyen and V. A. Dao, Creation and propagation of a single magneticdomain wall in 2D nanotraps with an injection square pad , Nanotechnology(2020) [submitted].  D. M. Hoat, D. Q. Hoang, M. Naseri, J. F. Rivas-Silvae, A. I. Kartamyshev and G. H. Cocoletzi, Computational prediction of the spin-polarized semiconductor equiatomic quaternary Heusler compound MnVZrP as spin-filters , RSC Adv. (2020) [accepted].  D.M. Hoat, D.Q. Hoang, M. Naserid, R.P. Pérez, N.T.T. Binh, J. F. Rivas-Silva, G.H. Cocoletzi, Newequiatomic quaternary Heusler compounds without transition metals KCaBX (X = S and Se): Robusthalf-metallic and optical properties, J. Mol. Graph. Model. 99 (2020) 107642.  A.N. Ulyanov, D.Q. Hoang, N. Kuznetsova and S.C. Yu, Negative imaginary component of AC magnetic susceptibility, metastable states, and magnetic relaxation in La 0.6 Sr 0.35 MnTi 0.05 O 3 , Funct. Mater. Lett. 13 (2020) 2050023.  V. T. Vu, H. Nguyen, D. Q. Hoang, T. P. Dao, C. V. Nguyen, H. V. Phuc, N.N. Hieu, H. Luong, H. Tong and D. K. Pham, The characteristics of defective ZrS 2 monolayers adsorbed various gases on S-vacancies: Afirst-principles study , Superlattice. Microst. 140 (2020) 106454.  B. D. Mai, H. T. Nguyen and D.Q. Hoang, Influence of cellulose nanoparticles on structure and dielectricproperties of ferroelectrics , Mater. Trans. 60 (2019) 2499.  B.D. Mai, H.T. Nguyen and D.Q. Hoang, A novel composite from nanodispersed silica and an organicferroelectric of diisopropylammonium bromide: preparation, characterization and dielectric properties , Mater. Trans. 60 (2019) 2132.  D.Q. Hoang, V.N.M. Ho, X.H. Cao, H. T. Nguyen and V.A. Dao, Tailoring sidewall profiles of magnetictunnel junctions fabricated with various etching conditions , Jpn. J. Appl. Phys. 58 (2019) 093001.  V.N. M. Ho, L.D.A. Ho, M.T. Tran, X.H. Cao, V. A. Dao, D.H. Tong, D. T. Ngo, D.Q. Hoang, Exploringcharacteristics of the corner sections of a domain wall trap nanostructure with the two-field directionmethod , RSC Adv. 8 (2018) 41828.  L.D.A. Ho, M.T. Tran, X.H. Cao, V.A. Dao, D.T. Ngo, D.Q. Hoang, Field-driven single domainwall motion in ferromagnetic nanowires , RSC Adv. 8 (2018) 14539.  D.Q. Hoang, M.T. Tran, X.H. Cao, D.T. Ngo, The effect of edge-roughness of magneticnanowires on the degree of asymmetry in transverse domain walls , RSC Adv. 7 (2017) 49188.  D.Q. Hoang, S. Korneychuk, K.J. Sankaran, P. Pobedinskas, S. Drijkoningen, S. Turner, M.K.Van Bael, J. Verbeeck, S.S. Nicley, K. Haenen, Direct nucleation of hexagonal boron nitride ondiamond: Crystalline properties of hBN nanowalls , Acta Mater. 127 (2017) 17.  K.J. Sankaran, D.Q. Hoang, S. Korneychuk, S. Kunuku, J.P. Thomas, P. Pobedinskas, S.Drijkoningen, M.K. Van Bael, J. D’Haen, J. Verbeeck, K.C. Leou, K.T. Leung, I.N. Lin, K. Haenen, Hierarchical hexagonal boron nitride nanowall-diamond nanorod heterostructures enhanceoptoelectronic performance , RSC Adv. 6 (2016) 90338.  K.J. Sankaran, D.Q. Hoang, K. Srinivasu, S. Korneychuk, S. Turner, S. Drijkoningen, P. Pobedinskas, J. Verbeeck, K.C. Leou, I.N. Lin, K. Haenen, Engineering the interface characteristicson the enhancement of field electron emission properties of vertically aligned hexagonal boronnitride nanowalls , Phys. Status Solidi A 213 (2016) 2654.  D.Q. Hoang, P. Pobedinskas, S.S. Nicley, S. Turner, S.D. Janssens, M.K. Van Bael, J. D’Haen, K.Haenen, Elucidation of the growth mechanism of sputtered 2D hexagonal boron nitride nanowalls ,Cryst. Growth Des. 16 (2016) 3699.  K.J. Sankaran, D.Q. Hoang, K. Srinivasu, S. Korneychuk, S. Turner, P. Pobedinskas, S. Drijkoningen,M.K. Van Bael, J. D’Haen, J. Verbeeck, K.C. Leou, I. N. Lin, K. Haenen, Enhancedoptoelectronic performances of vertically aligned hexagonal boron nitride nanowalls nanocrystallinediamond heterostructures , Sci. Rep. 6 (2016) 29444.  D.C. Leitao, R.J. Macedo, A.V. Silva, D.Q. Hoang, D.A. MacLaren, S. McVitie, S. Cardoso,P.P. Freitas, Optimization of exposure parameters for lift-off process of sub-100 features using anegative tone electron beam resist , 12th IEEE-NANO (2012): DOI: 10.1109/NANO.2012.63219452/6  A.N. Ulyanov, H.D. Quang, N.E. Pismenova, S. C. Yu and G.G. Levchenko, Pr 0.7 Ca 0.15 Ba 0.15 MnO 3 manganite: Electron paramagnetic resonance, conductivity and susceptibility , Solid State Commun. 152 (2012) 1556.  D.T. Ngo, H.G. Duong, H.H. Nguyen, C. Nguyen, M. Basith, D.Q. Hoang, The microstructure,high performance magnetic hardness and magnetic after-effect of an a -FeCo/Pr 2 Fe 14 Bnanocomposite magnet with low Pr concentration , Nanotech. 20 (2009) 165707.  A.N. Ulyanov, H.D. Quang, K.W. Lee, S.C. Yu, N.H. Sinh, Y.M. Kang, S.I. Yoo, Magneticrelaxation behavior in Nd 0.5 Sr 0.5 MnO 3 : observation of negative imaginary component of acmagnetic susceptibility , IEEE Trans. Magn. 44 (2008) 3060.  H.D. Quang, N.H. Sinh, S.K. Oh, T.N. Huynh, J. Zidanic, N.T. Hien, S. C. Yu, Reactionmechanism of chemical elements (Co, Fe, Mn) existing in spin valves containing oxide layers ,Jpn. J. Appl. Phys. 45 (2006) 088.  H.D. Quang, C.X. Huu, S.K. Oh, V.S. Dang, N.H. Sinh, S.C. Yu, Magneto-transport properties of magnetic tunneling transistors at low and room temperatures , Nanotech. 17 (2006) 3359.  H.D. Quang, N.H. Sinh, S.K. Oh, N.T. Hien, S.C. Yu, Micro-structural change and hightemperature properties of constituent elements (Fe, Co, Mn, Cu) in spin valves containing oxidelayers , J. Phys. D: Appl. Phys. 38 (2005) 3560.  A.N. Ulyanov, H.D. Quang, N.E. Pismenova, S.C. Yu, EPR and resistivity study ofPr 0.7 Ba 0.3 MnO 3 manganite , IEEE Trans. Magn. 41 (2005) 2745.  H.D. Quang, N.T. Hien, S.K. Oh, N.H. Sinh, S.C. Yu, Chemical properties and GMR improvementof specular spin valves with nano-oxide layers, formed in ambient mixed gases , J. Phys. D:Appl. Phys. 37 (2004) 3290.  A.N. Ulyanov, H.D. Quang, M. Vasundhara, C. Nguyen, S.C. Yu, Adiabatic polaron transportin La 0.9 Pb 0.1 MnO 3 manganites , Phys. Status Solidi B 241 (2004) 1482.  H.D. Quang, N.T. Hien, S.K. Oh, S.C. Yu, Effects of mixed gases on characteristics of specularspin-valves containing oxide layers , Phys. Status Solidi A 201 (2004) 3129.  M.H. Phan, S.B. Tian, D.Q. Hoang, S.C. Yu, C. Nguyen, A.N. Ulyanov, Large magnetic-entropychange above 300 K in CMR materials , J. Magn. Magn. Mater. 258 - 259 (2003) 309. Phòng D005, VP Khoa Kỹ thuật công trình (84-028) 37755036  khoaktct@tdtu.edu.vn KHOA KỸ THUẬT CÔNG TRÌNH TRƯỜNG ĐẠI HỌC TÔN ĐỨC THẮNG Số 19 Nguyễn Hữu Thọ, Phường Tân Phong, Quận 7, TP. Hồ Chí Minh, Việt Nam. Copyright ©  Ton Duc Thang University