metal–oxide–semiconductor MOSFETs RCA General Microelectronics self-aligned gate Donald Klein silicon-gate self-aligned gates Federico Faggin MOSFET integrated circuit transistor Bell Labs Fairchild Semiconductor semiconductor electronic transistors silicon de fabricated
Modern monolithic ICs are predominantly MOS (metal–oxide–semiconductor) integrated circuits, built from MOSFETs (MOS transistors). The earliest experimental MOS IC to be fabricated was a 16-transistor chip built by Fred Heiman and Steven Hofstein at RCA in 1962. General Microelectronics later introduced the first commercial MOS IC in 1964, developed by Robert Norman. Following the development of the self-aligned gate (silicon-gate) MOS transistor by Robert Kerwin, Donald Klein and John Sarace at Bell Labs in 1967, the first silicon-gate MOS IC with self-aligned gates was developed by Federico Faggin at Fairchild Semiconductor in 1968. The MOSFET has since become the most critical device component in modern ICs.
