MOSFET Mohamed M. Atalla Dawon Kahng Bell Labs memory cell magnetic cores Semiconductor memory MOS memory magnetic-core memory random-access memory static RAM Fairchild Semiconductor Robert Dennard IBM Thomas J. Watson Research Center dynamic RAM Simon Sze floating-gate MOSFET non-volatile memory EPROM EEPROM flash memory ROM transistor transistors memory IBM Thomas random-access
The MOSFET (metal–oxide–semiconductor field-effect transistor, or MOS transistor) was invented by Mohamed M. Atalla and Dawon Kahng at Bell Labs in 1959. In addition to data processing, the MOSFET enabled the practical use of MOS transistors as memory cell storage elements, a function previously served by magnetic cores. Semiconductor memory, also known as MOS memory, was cheaper and consumed less power than magnetic-core memory. MOS random-access memory (RAM), in the form of static RAM (SRAM), was developed by John Schmidt at Fairchild Semiconductor in 1964. In 1966, Robert Dennard at the IBM Thomas J. Watson Research Center developed MOS dynamic RAM (DRAM). In 1967, Dawon Kahng and Simon Sze at Bell Labs developed the floating-gate MOSFET, the basis for MOS non-volatile memory such as EPROM, EEPROM and flash memory.
