metal–oxide–silicon field-effect transistor Mohamed M. Atalla Dawon Kahng high scalability high-density integrated circuits memory cell semiconductor memory magnetic-core memory microcomputer revolution computer revolution digital electronics MOSFET bipolar junction transistor memory transistor Bell Labs semiconductor electronic transistors silicon digital electronic field-effect transistor de digital
The metal–oxide–silicon field-effect transistor (MOSFET), also known as the MOS transistor, was invented by Mohamed M. Atalla and Dawon Kahng at Bell Labs in 1959. It was the first truly compact transistor that could be miniaturized and mass-produced for a wide range of uses. With its high scalability, and much lower power consumption and higher density than bipolar junction transistors, the MOSFET made it possible to build high-density integrated circuits. In addition to data processing, it also enabled the practical use of MOS transistors as memory cell storage elements, leading to the development of MOS semiconductor memory, which replaced earlier magnetic-core memory in computers. The MOSFET led to the microcomputer revolution, and became the driving force behind the computer revolution. The MOSFET is the most widely used transistor in computers, and is the fundamental building block of digital electronics.
