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Sundar Gopalan received his Bachelor of Technology degree from the Institute of Technology, Banaras Hindu University, Varanasi, India, in May 1995. He completed his M.S. and Ph.D. degrees from the University of Texas at Austin, USA in the area of Microelectronic Engineering in 2002. He worked in International Sematech, a semiconductor research consortium located in Austin, Texas, USA, as a Post-Doc and Process research engineer for two years in the Advanced Gate Stack Engineering Group. There he was involved in studying and designing new gate stack structures for the next generation CMOS Technology. He joined the Department of Electronics and Communication Engineering at Amrita School of Engineering, Amritapuri Campus, India, in August of 2004. He is serving as professor and chairperson of ECE department. He has authored/co-authored more than 42 International publications. He specializes in the areas of Electronic Materials, Semiconductor Devices, VLSI Fabrication, Materials Characterization, Processing and Mechanical Behavior of Materials.
|Year of Publication
Rahulan N., Dr. Sundararaman Gopalan, and Kumaran S., "Effect of Lithium on the Mechanical Behavior of Magnesium", Materials Today: Proceedings, vol. 18, Part 7. pp. 2573 - 2580, 2019.[Abstract]
Lithium is the metal with lowest density. Lithium addition to the magnesium results in an ultra-light weight alloy with excellent properties on a mass basis. In this work, the effect of lithium content on mechanical properties of magnesium were studied. Vacuum stir casting method was employed to cast the alloys. The extrusion of these binary alloys was carried out. Microstructures of all alloys were taken. Tensile tests of extruded alloys were conducted and property values were noted. Micro hardness test was conducted on both cast and extruded alloys.More »»
Rahulan N., Dr. Sundararaman Gopalan, and Kumaran S., "Mechanical behavior of Mg-Li-Al alloys", Materials Today: Proceedings, vol. 5, no. 9, Part 3. pp. 17935 - 17943, 2018.[Abstract]
Magnesium is considered as one of the lightest structural materials, while lithium is the lightest metal in the periodic table. The alloy of magnesium with lithium results in an ultra-light weight family of alloys which offer very good strength to weight ratio, ductility, damping capacity etc. This work was carried out to understand the effect of aluminum addition on the mechanical properties of these binary alloys. The alloy was prepared by stir casting technique in argon atmosphere. The cast alloy was homogenized and extruded for different compositions. The properties such as density, hardness, tensile strength, yield strength, % elongation were measured for extruded alloys. Extruded alloys were also subjected to rolling. Properties such as density and hardness were measured for rolled alloys. Significant improvement in tensile properties and hardness were achieved by the addition of aluminumMore »»
Dr. Sundararaman Gopalan, Dutta, S., Ramesh, S., Prathapan, R., and Sreehari, G., "Al203 thin films on Silicon and Germanium substrates for CMOS and flash memory applications", AIP Conference Proceedings International Conference on Functional Materials, Characterization, Solid State Physics, Power, Thermal and Combustion Energy 2017, FCSPTC 2017,Andhra Pradesh, India, vol. 1859. American Institute of Physics Inc., 2017.[Abstract]
As scaling of device dimensions has continued, it has become necessary to replace traditional SiO2 with high dielectric constant materials in the conventional CMOS devices. In addition, use of metal gate electrodes and Germanium substrates may have to be used in order to address leakage and mobility issues. Al2O3 is one of the potential candidates both for CMOS and as a blocking dielectric for Flash memory applications owing to its low leakage. In this study, the effects of sputtering conditions and post-deposition annealing conditions on the electrical and reliability characteristics of MOS capacitors using Al2O3 films on Si and Ge substrates with Aluminium gate electrodes have been presented. It was observed that higher sputtering power resulted in larger flat-band voltage (Vfb) shifts, more hysteresis, higher interface state density (Dit) and a poorer reliability. Wit was also found that while a short duration high temperature annealing improves film characteristics, a long duration anneal even at 800C was found to be detrimental to MOS characteristics. Finally, the electronic conduction mechanism in Al2O3 films was also studied. It was observed that the conduction mechanism varied depending on the annealing condition, thickness of film and electric field. © 2017 Author(s).More »»
Dr. Sundararaman Gopalan, Han, J. H., Balu, V., Lee, J. H., Mohemmedali, R., Wong, C. H., and Lee, J. C., "Effect of N2O on the RF-magnetron Sputtered SrTiO3 Films for ULSI DRAM Application", Proceedings of the 11th International Symposium on Integrated Ferroelectrics. Colorado Springs, 1999.
|Year of Publication
F. C. Robert, Sisodia, G. S., and Dr. Sundararaman Gopalan, "Affordable Rural Electricity Through Intelligent Grid Extension And Local Renewable Energy Generation", Sustainable Cities and Society, Special issue on Microgrid Implementation and Optimization; Elsevier, 2018.
D. Fabien Chi Robert, Sisodia, G. Singh, and Dr. Sundararaman Gopalan, "A critical review on the utilization of storage and demand response on the implementation of renewable energy microgrids", Sustainable Cities and Society, Special issue on Microgrid Implementation and Optimization, Elsevier, vol. 40, pp. 735 - 745, 2018.[Abstract]
Renewable energy generation represents a unique solution to ensure the sustainable development of society. However, its fluctuating nature can disturb the energy balance mechanism of the power grid. In microgrids powered by renewables, the issue is even more critical. Fossil fuel generation typically supplements renewables but storage and demand response can be more flexible and cost effective. This paper is an overview of recent undertakings that present storage and demand response techniques as solutions for the stable operation of renewable energy microgrids. The critical analysis of the recent papers in this area reveals that the parameters used for modeling storage have been simplified (efficiency, dynamic behavior at fast rate of discharge, aging…) and that the demand response incentives have been assumed to be enough for users to be willing to participate in demand response programs. These assumptions make the proposed solutions too inaccurate to be implemented on the field yet. If renewables have to be implemented on a large scale, specific and accurate models have to be used. By building on the current research presented here, much work can be converted into real advances in the field of renewable energy integration in microgrids.More »»
Dr. Sundararaman Gopalan, Ramesh, S., Dutta, S., and Garbhapu, V. Virajit, "Effects of substrate heating and post-deposition annealing on characteristics of thin MOCVD HfO 2 films", IOP Conference Series: Materials Science and Engineering, vol. 310, p. 012125, 2018.[Abstract]
It is well known that Hf-based dielectrics have replaced the traditional SiO 2 and SiON as gate dielectric materials for conventional CMOS devices. By using thicker high-k materials such as HfO 2 rather than ultra-thin SiO2, we can bring down leakage current densities in MOS devices to acceptable levels. HfO 2 is also one of the potential candidates as a blocking dielectric for Flash memory applications for the same reason. In this study, effects of substrate heating and oxygen flow rate while depositing HfO 2 thin films using CVD and effects of post deposition annealing on the physical and electrical characteristics of HfO 2 thin films are presented. It was observed that substrate heating during deposition helps improve the density and electrical characteristics of the films. At higher substrate temperature, V fb moved closer to zero and also resulted in significant reduction in hysteresis. Higher O 2 flow rates may improve capacitance, but also results in slightly higher leakage. The effect of PDA depended on film thickness and O 2 PDA improved characteristics only for thick films. For thinner films forming gas anneal resulted in better electrical characteristics.More »»
S. Ramesh, Dutta, S., Balakrishnan Shankar, and Dr. Sundararaman Gopalan, "Identification of current transport mechanism in Al2O3 thin films for memory applications", Applied Nanoscience, vol. 5, pp. 115-123, 2014.[Abstract]
The effect of oxygen anneal on the electrical characteristics, especially on the current transport mechanism, of Al2O3 films in the thickness range of 10–30 nm was examined in detail. The analyses were performed at electric fields of ≤2.5 MV/cm to effectively address the reliability of Al2O3-based devices operating in the low electric field regime. The general conduction mechanism equations were used to simulate the expected current density (J) values for a given electric field (E) range. The characteristic linear plots of the conduction mechanisms were then used to compare the experimental and simulated data to identify the most probable mechanism occurring in the dielectric. Parameters like barrier height and activation energy were extracted from the fit. It was found that oxygen anneal has profound effects on the electrical properties of Al2O3 films, with annealed films demonstrating a different conduction mechanism than their unannealed counterparts, along with significant improvement in the leakage current and barrier height. This kind of analyses will help optimize the process conditions for Al2O3 deposition and provide an optimal range for device operation, thus improving the reliability of Al2O3 films for applications in CMOS logic and Flash memory.More »»
S. Dutta, Ramesh, S., Shankar, B., and Dr. Sundararaman Gopalan, "Effect of PVD process parameters on the quality and reliability of thin (10–30 nm) Al2O3 dielectrics", Applied Nanoscience, vol. 2, pp. 1–6, 2012.
N. A. Jacob, Pillai, V., Nair, S., ,, Harrell, D. T., Delhommer, R., Chen, B., Sanchez, I., Almstrum, V., and Dr. Sundararaman Gopalan, "Low-cost remote patient monitoring system based on reduced platform computer technology.", Telemedicine journal and e-health : the official journal of the American Telemedicine Association, vol. 17, pp. 536-545, 2011.[Abstract]
Telemedicine is a well-accepted method providing healthcare benefits to people over long distances. However, in normal telemedicine practices, dedicated complex hardware and network backbones for data collection and communication make the system unintelligible to the common man. Centralization of telemedicine units also makes it accessible only to the immediate surrounding community. In an attempt to address these issues, a study aimed at developing a low-cost remote patient monitoring (RPM) system based on reduced platform computer technology has been carried out. The main focus of the work was to develop a real-time, universal serial bus plug-in module for a portable RPM system, specifically the XO Laptop. In addition, this system is also intended to serve as an educational tool especially for the One Laptop per Child target community. This article discusses data collection, preprocessing, and constraints such as network bandwidth and power availability prior to data transmission over a user datagram protocol (UDP)-based network. More »»
N. Alex Jacob, Pillai, V., Nair, S., Harrell, D. Toshio, Delhommer, R., Chen, B., Sanchez, I., Almstrum, V., and Dr. Sundararaman Gopalan, "Low-Cost Remote Patient Monitoring System Based on Reduced Platform Computer Technology", Telemedicine and e-Health, vol. 17, pp. 536–545, 2011.[Abstract]
Telemedicine is a well-accepted method providing healthcare benefits to people over long distances. However, in normal telemedicine practices, dedicated complex hardware and network backbones for data collection and communication make the system unintelligible to the common man. Centralization of telemedicine units also makes it accessible only to the immediate surrounding community. In an attempt to address these issues, a study aimed at developing a low-cost remote patient monitoring (RPM) system based on reduced platform computer technology has been carried out. The main focus of the work was to develop a real-time, universal serial bus plug-in module for a portable RPM system, specifically the XO Laptop. In addition, this system is also intended to serve as an educational tool especially for the One Laptop per Child target community. This article discusses data collection, preprocessing, and constraints such as network bandwidth and power availability prior to data transmission over a user datagram protocol (UDP)-based network. More »»
J. J. Peterson, Young, C. D., Barnett, J., Dr. Sundararaman Gopalan, Gutt, J., Lee, C. - H., Li, H. - J., Hou, T. - H., Kim, Y., Lim, C., and , "Subnanometer scaling of HfO2/metal electrode gate stacks", Electrochemical and solid-state letters, vol. 7, pp. G164–G167, 2004.[Abstract]
The equivalent oxide thickness (EOT) of high-k n-channel metal oxide semiconductor (NMOS) transistors was scaled using 3 methods, Formula reduction of the bottom interfacial layer (BIL) using Formula interface engineering, Formula thickness reduction of the Formula dielectric, and Formula use of metal gate electrodes to minimize top interfacial growth formation and polysilicon depletion. NMOS transistors fabricated using these methods demonstrate 0.72 nm EOT using the Formula BIL with scaled Formula /metal gates and 0.81 nm EOT using the Formula BIL with scaled Formula /metal gates. Charge pumping, mobility, and device performance results of these high-k NMOS transistors is discussed. © 2004 The Electrochemical Society. All rights reserved. More »»
M. Shahariar Akbar, Dr. Sundararaman Gopalan, Cho, H. - J., Onishi, K., Choi, R., Nieh, R., Kang, C. S., Kim, Y. H., Han, J., Krishnan, S., and , "High-performance TaN/HfSiON/Si metal-oxide-semiconductor structures prepared by NH3 post-deposition anneal", Applied physics letters, vol. 82, pp. 1757–1759, 2003.
K. Onishi, Kang, C. Seok, Choi, R., Cho, H. - J., Dr. Sundararaman Gopalan, Nieh, R. E., Krishnan, S. A., and Lee, J. C., "Improvement of surface carrier mobility of HfO 2 MOSFETs by high-temperature forming gas annealing", Electron Devices, IEEE Transactions on, vol. 50, pp. 384–390, 2003.
Dr. Sundararaman Gopalan, "Process development, material analysis, and electrical characterization of ultra thin hafnium silicate films for alternative gate dielectric application", ProQuest Dissertations And Theses; Thesis (Ph.D.)--The University of Texas at Austin, vol. 64, no. 01, p. 0367;176 , 2002.[Abstract]
As aggressive scaling of the Metal-Oxide-Semiconductor (MOS) integrated circuit continues, the required equivalent oxide thickness (EOT) for 100nm technology and beyond is expected to be less than 12A. In this ultra-thin film regime, SiO2 or oxynitrides face serious limitations due to direct tunneling currents, dopant penetration, and reliability concerns. HfO 2, ZrO2 and their silicates are being considered as potential candidates for replacing conventional oxides or oxynitrides owing to their thermodynamic stability in contact with silicon, high dielectric constants, chemical stability at high temperatures, etc. Although HfO 2 has shown promising electrical characteristics such as low EOT and leakage, low crystallization temperature, poor interface quality, uncontrolled interfacial layer growth, and reliability issues are some of the concerns with it. HfSixOy has been sought as a solution to alleviate some of these problems. Hafnium silicate films were deposited by co-sputtering of hafnium and silicon in argon ambient followed by annealing. Hafnium silicates with more than 13% Si remains amorphous even after 1000°C anneals. They also show better thermal stability characteristics than HfO2 at all compositions studied. They have been shown to be compatible with poly and TaN gate electrodes. Through process optimization, Hf-silicate films have been scaled down to 10.3A, with leakage in the order of 1mA/cm2 at -1.5V. Low dispersion, low stress-induced leakage currents, high effective breakdown fields, and large lifetimes were obtained. Good thermal stability with polysilicon and TaN electrodes were also obtained. MOS transistors have been demonstrated with poly and TaN electrodes, showing excellent subthreshold and drive current characteristics. The effects of NH3 pre-treatment on the electrical and reliability characteristics were also investigated. While thermal stability, EOT, leakage and breakdown were improved significantly, threshold voltage shifts, high hysteresis, poor MOSFET and poor reliability characteristics were obtained for the NH 3 pre-treated samples. In conclusion, promising electrical and material characteristics were obtained for Hf-silicates indicating that they are attractive candidates for alternative gate dielectric applications. More »»
Y. Hee Kim, Onishi, K., Kang, C. Seok, Cho, H. - J., Nieh, R., Dr. Sundararaman Gopalan, Choi, R., Han, J., Krishnan, S., and Lee, J. C., "Area dependence of TDDB characteristics for HfO2 gate dielectrics", IEEE Electron Device Letters, vol. 23, pp. 594-596, 2002.[Abstract]
Weibull slopes, area scaling factors, and lifetime projection have been investigated for both soft breakdown and hard breakdown for the first time, in order to gain a better understanding of, the breakdown mechanism of HfO/sub 2/ gate dielectrics. The Weibull slope /spl beta/ of the hard breakdown for both the area dependence and the time-to-dielectric-breakdown distribution was found to be /spl beta/ = 2, whereas that of the soft breakdown was about 1.4. Estimated ten-year lifetime has been projected to be -2 V. More »»
R. Nieh, Choi, R., Dr. Sundararaman Gopalan, Onishi, K., Kang, C. Seok, Cho, H. - J., Krishnan, S., and Lee, J. C., "Evaluation of silicon surface nitridation effects on ultra-thin ZrO2 gate dielectrics", Applied physics letters, vol. 81, pp. 1663–1665, 2002.[Abstract]
The effects of silicon surface nitridation on metal–oxide–semiconductor capacitors with zirconium oxide (ZrO2)(ZrO2) gate dielectrics were investigated. Surface nitridation was introduced via ammonia (NH3)(NH3) annealing prior to ZrO2ZrO2 sputter-deposition, and tantalum nitride (TaN) was used for the gate electrode. It was found that capacitors with the nitridation had thinner equivalent oxide thickness (∼8.7 Å), comparable leakage current, and slightly increased capacitance–voltage hysteresis as compared to samples without nitridation. Additionally, transmission electron microscopy pictures revealed that nitrided samples had a thicker interfacial layer (IL), which had a higher dielectric constant than that of the non-nitrided IL. More »»
C. S. Kang, Cho, H. - J., Onishi, K., Nieh, R., Choi, R., Dr. Sundararaman Gopalan, Krishnan, S., Han, J. H., and Lee, J. C., "Bonding states and electrical properties of ultrathin HfO$_x$N$_y$ gate dielectrics", Applied Physics Letters, vol. 81, p. 2593, 2002.[Abstract]
Hafnium oxynitride (HfOxNy) gate dielectric was prepared using reactive sputtering followed by postdeposition annealing at 650 °C in a N2 ambient. Nitrogen incorporation in the dielectric was confirmed by x-ray photoelectron spectroscopy analysis. In comparison to HfO2 of the same physical thickness, HfOxNy gate dielectric showed lower equivalent oxide thickness (EOT) and lower leakage density (J). Even after a high-temperature postmetal anneal at 950 °C, an EOT of 9.6 Å with J of 0.8 mA/cm2 @-1.5 V was obtained. In contrast, J of ˜20 mA/cm2 @-1.5 V for HfO2 with an EOT of 10 Å was observed. The lower leakage current and superior thermal stability of HfOxNy can be attributed to the formation of silicon-nitrogen bonds at the gate dielectric/Si interface and strengthened immunity to oxygen diffusion by the incorporated nitrogen. More »»
Dr. Sundararaman Gopalan, Onishi, K., Nieh, R., Kang, C. S., Choi, R., Cho, H. - J., Krishnan, S., and Lee, J. C., "Electrical and physical characteristics of ultrathin hafnium silicate films with polycrystalline silicon and TaN gates", Applied physics letters, vol. 80, pp. 4416–4418, 2002.
H. - J. Cho, Kang, C. Seok, Onishi, K., Dr. Sundararaman Gopalan, Nieh, R., Choi, R., Krishnan, S., and Lee, J. C., "Structural and electrical properties of HfO 2 with top nitrogen incorporated layer", Electron Device Letters, IEEE, vol. 23, pp. 249–251, 2002.
L. Kang, Lee, B. Hun, Qi, W. - J., Jeon, Y., Nieh, R., Dr. Sundararaman Gopalan, Onishi, K., and Lee, J. C., "Electrical characteristics of highly reliable ultrathin hafnium oxide gate dielectric", Electron Device Letters, IEEE, vol. 21, pp. 181–183, 2000.
A. Lucas, Dr. Sundararaman Gopalan, Lee, J. C., Kaushal, S., Niino, R., and Tada, Y., "Ultrathin Gate Oxynitrides Grown Using Fast Ramp Vertical Furnace for Sub-130 Nanometer Technology", Electrochemical and Solid-State Letters, vol. 3, pp. 389–391, 2000.
Dr. Sundararaman Gopalan, Balu, V., Lee, J. - H., Hee-Han, J., and Lee, J. C., "Study of the electronic conduction mechanism in Nb-doped SrTiO3 thin films with Ir and Pt electrodes", Applied Physics Letters, vol. 77, pp. 1526–1528, 2000.
J. - H. Lee, Mohammedali, R., Han, J. H., Balu, V., Dr. Sundararaman Gopalan, Wong, C. - H., and Lee, J. C., "The niobium doping effects on resistance degradation of strontium titanate thin film capacitors", Applied physics letters, vol. 75, pp. 1455–1457, 1999.[Abstract]
The rate of resistance degradation of thin (<450 Å) niobium-doped strontium titanate polycrystalline films with platinum top electrodes and iridium bottom electrodes was investigated as a function of direct current (dc) voltages, temperature, Nb atomic fractions [Sr(Ti1−xNbx)O3+y,[Sr(Ti1−xNbx)O3+y, x=0,x=0, 0.001, 0.01, and 0.05, respectively], and capacitor areas (from 2.50×10−52.50×10−5 to 2.91×10−3 cm2).2.91×10−3 cm2). It was found that by increasing the amount of niobium, the resistance degradation rates were greatly reduced, but the leakage currents increased. Also, the degradation rates seemed fairly independent of the areas of the devices. More »»
Dr. Sundararaman Gopalan, Wong, C. - H., Balu, V., Lee, J. - H., Han, J. H., Mohammedali, R., and Lee, J. C., "Effect of niobium doping on the microstructure and electrical properties of strontium titanate thin films for semiconductor memory application", Applied physics letters, vol. 75, pp. 2123–2125, 1999.
|Year of Publication
S. M, Anand, D., A, D. P., and Dr. Sundararaman Gopalan, "Comparison of High K Metal Gate Based CMOS Amplifiers performance with traditional Gate stack structures", in ICEES 2018, 4th International Conference on Electrical Energy System , India, 2018.
D. Anand, M, S., Dr. Sundararaman Gopalan, and A, P., "Accessing the performance of CMOS Amplifiers using High-k-Dielectric with Metal Gate on high mobility substrate", in ICACDS 2018, Springer CCIS, 2018.
Fabien Chidanand Robert, Sisodia, G. S., and Dr. Sundararaman Gopalan, "The critical role of anchor customers in rural microgrids, Impact of load factor on energy cost", in 2017 International Conference on Computation of Power, Energy Information and Commuincation (ICCPEIC), Chennai, India, 2017.[Abstract]
The development of the society was supported by an easy access to energy and in particular to electricity. However, 1.2 billion people worldwide are yet to receive an electrical connection. Most of them live in rural areas and many are far from the grid or in hilly terrains. Renewable energy microgrids are a good alternative to grid extension in many cases. However, the rural communities often consist of households only, with an energy demand concentrated in the morning and at night, in the early hours. This increases the need for costly storage as renewable energy is either available during the day for solar, or distributed throughout the day for wind. Anchor customers are users such as schools, hospitals, small manufacturing units or GSM tower that consume energy throughout the day. They contribute to the local development and can be a source of steady income for the microgrid. This paper illustrates that by including such customers at the microgrid design stage, the average cost of energy can be reduced. Through microgrid design simulations, it is shown that when anchor customers represent around 30% of the load (load factor of 0.4), the cost of energy can be reduced by 22% for a microgrid powered by wind and solar energy and by 48% for a solar microgrid, compared to a village with less than 10% of anchor users (load factor 0.2). It is thus critical to include anchor customers at the microgrid design stage in order to provide affordable energy in rural areas.More »»
V. Virajit Garbhapu and Dr. Sundararaman Gopalan, "IoT Based Low Cost Single Sensor Node Remote Health Monitoring System", in 8th International Conference on Emerging Ubiquitous Systems and Pervasive Networks, EUSPN 2017 and the 7th International Conference on Current and Future Trends of Information and Communication Technologies in Healthcare, ICTH 2017, Lund; Sweden, 2017, vol. 113, pp. 408 - 415.[Abstract]
In developing countries, population increase is not sufficiently matched by increase in available health care resources. Inspite of technology advances, proper medical facility and resources are still not available to a large percentage of population, especially those having low income and living in rural or remote areas. There is an urgent need for development of a low cost and highly reliable technology for monitoring healthcare for those living in such areas that provides rapid monitoring of basic vital health parameters for large numbers of people, and making this data readily available to doctor present anywhere in the world. A novel and an efficient biomedical device has been designed which can quickly monitor the vital signs of large number of people simultaneously and transmit that information wirelessly to the doctor or medical facility present anywhere in the world. The instrument is represented by a hub and spoke model with the spokes being the sensor nodes consisting of a microcontroller MSP430G2553 and a wireless transceiver nRF24L01 (IEEE 802.15.4). The hub consists of a Raspberry Pi 3 with the same transceiver. The data received at the hub can be transmitted to the doctor through the inbuilt IEEE 802.11 (Wi-Fi protocol) of Raspberry Pi 3. All that the instrument needs to work is a Wi-Fi or an Ethernet connection and all the sensor nodes can be powered from the coin cell batteries.More »»
J. Gutt, Dr. Sundararaman Gopalan, Brown, G. A., Kirsch, P. D., Peterson, J. J., Gardner, M. I., Li, H. - J., Lysaght, P., Alshareef, H. N., Choi, K., and , "ALD of advanced high-k and metal gate stacks for MOS devices", in Proceedings-Electrochemical Society, 2005, vol. PV 2005-05, pp. 282-292.
C. D. Young, Kerber, A., Hou, T. H., Cartier, E., Brown, G. A., Bersuker, G., Kim, Y., Lim, C., Gutt, J., Lysaght, P., and Dr. Sundararaman Gopalan, "Charge trapping and electron mobility degradation in MOCVD hafnium silicate gate dielectric stack structures", 2004.
J. Barnett, Moumen, N., Gutt, J., Gardner, M., Huffman, C., Majhi, P., Peterson, J. J., Dr. Sundararaman Gopalan, Foran, B., Li, H. J., and , "Experimental study of etched back thermal oxide for optimization of the Si/high-k interface", in 2004 Spring Meeting of the Material Research Society, 2004.[Abstract]
We have demonstrated a uniform, robust interface for high-k deposition with significant improvements in device electrical performance compared to conventional surface preparation techniques. The interface was a thin thermal oxide that was grown and then etched back in a controlled manner to the desired thickness. Utilizing this approach, an equivalent oxide thickness (EOT) as low as 0.87 nm has been demonstrated on high-k gate stacks having improved electrical characteristics as compared to more conventionally prepared starting surfaces. More »»
B. H. Lee, Young, C. D., Choi, R., Sim, J. H., Bersuker, G., Kang, C. Y., Harris, R., Brown, G. A., Matthews, K., Song, S. C., Moumen, N., Barnett, J., Lysaght, P., Choi, K. S., Wen, H. C., Huffman, C., Alshareef, H., Majhi, P., Dr. Sundararaman Gopalan, Peterson, J., Kirsh, P., Li, H. J., Gutt, J., Gardner, M., Huff, H. R., Zeitzoff, P., Murto, R. W., Larson, L., and Ramiller, C., "Intrinsic characteristics of high-k devices and implications of fast transient charging effects (FTCE)", in IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004., 2004.[Abstract]
Fast transient charging effects (FTCE) are found to be the source of various undesirable characteristics of high-k devices, such as Vth instability, low DC mobility and poor reliability. The intrinsic characteristics of high-k transistors free from FTCE are demonstrated using ultra-short pulsed I-V measurements, and it is found that the intrinsic mobility of high-k devices can be much higher than what has been observed in DC based measurements. The FTCE model suggests that many of DC characterization methods developed for SiO2 devices are not sufficiently adequate for high-k devices that exhibit significant transient charging. The existence of very strong concurrent transient charging during various reliability tests also degrades the validity of test results. Finally, the implication of FTCE on the high-k implementation strategy is discussed. More »»
G. Bersuker, Gutt, J., Chaudhary, N., Moumen, N., Lee, B. H., Barnett, J., Dr. Sundararaman Gopalan, Brown, G., Kim, Y., Young, C. D., and , "Integration issues of high-k gate stack: Process-induced charging", in Reliability Physics Symposium Proceedings, 2004. 42nd Annual. 2004 IEEE International, 2004.[Abstract]
Electrical properties of a wide range of Hf-based gate stacks were investigated using several modifications of a standard planar CMOS process flow to address the effects of transistor processing on the electrical properties of the high-k dielectrics. Characteristics of the short channel transistors were shown to be very sensitive to the fabrication process specifics - process sequence, tools, and recipes. It was concluded that, contrary to SiO2, the high-k films could be contaminated with reactive species during the post-gate definition fabrication steps, resulting in the formation of local charge centers. Such process-induced charging (PIC) degrades transistor performance and complicates evaluation of the intrinsic properties of high-k dielectrics. A process scheme that minimizes PIC is discussed. More »»
C. D. Young, Kerber, A., Hou, T. H., Cartier, E., Brown, G. A., Bersuker, G., Kim, Y., Lim, C., Gutt, J., Lysaght, P., Dr. Sundararaman Gopalan, and , "Charge trapping and mobility degradation in MOCVD hafnium silicate gate dielectric stack structures", 2003.
M. I. Gardner, Dr. Sundararaman Gopalan, Gutt, J., Peterson, J., Li, H. - J., and Huff, H. R., "EOT scaling and device issues for high-k gate dielectrics", in Gate Insulator, 2003. IWGI 2003. Extended Abstracts of International Workshop on, 2003.
R. Choi, Onishi, K., Kang, C. Scok, Nieh, R., Dr. Sundararaman Gopalan, Cho, H. - J., Krishnan, S., and Lee, J. C., "High quality MOSFETs fabrication with HfO/sub 2/ gate dielectric and tan gate electrode", in 60th DRC. Conference Digest Device Research Conference, 2002.[Abstract]
MOSFETs with high gate dielectric such as HfOz, ZrOz and LazOl have been studied intensively. Among these materials, HfOz seems to be promising because of its compatibility with the polysilicon gate process and relatively superior scalability. More »»
Dr. Sundararaman Gopalan, Choi, R., Onishi, K., Nieh, R., Kang, C. S., Cho, H. J., Krishnan, S., and Lee, J. C., "Impact of NH/sub 3/ pre-treatment on the electrical and reliability characteristics of ultra thin hafnium silicate films prepared by re-oxidation method", in 60th DRC. Conference Digest Device Research Conference, 2002.[Abstract]
The trade-offs between the benefits of NH/sub 3/ pre-treatment such as improved scalability, lower leakage and higher breakdown fields, and potential issues such as large hysteresis, degraded MOSFET characteristics and poorer reliability on Hf-silicate devices have been studied. More »»
K. Onishi, Kang, C. Seok, Choi, R., Cho, H. - J., Dr. Sundararaman Gopalan, Nieh, R., Krishnan, S., and Lee, J. C., "Charging effects on reliability of HfO2 devices with polysilicon gate electrode", in 2002 IEEE International Reliability Physics Symposium. Proceedings. 40th Annual (Cat. No.02CH37320), 2002.[Abstract]
Time dependent dielectric breakdown and bias temperature instability of HfO2 devices with polysilicon gate electrodes are studied. Both N and PMOS capacitors have sufficient TDDB lifetime, whereas PMOS capacitors show gradual increase in the leakage current during stress. HfO2 PMOSFET's without nitridation have sufficient immunity against negative bias temperature instability. Bias temperature instability for NMOS can be a potential scaling limit for HfO2. More »»
R. Nieh, Krishnan, S., Cho, H. - J., Kang, C. Seok, Dr. Sundararaman Gopalan, Onishi, K., Choi, R., and Lee, J. C., "Comparison between ultra-thin ZrO/sub 2/ and ZrO/sub x/N/sub y/ gate dielectrics in TaN or poly-gated NMOSCAP and NMOSFET devices", in 2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303), 2002.[Abstract]
Both NMOSCAP and self-aligned NMOSFET devices using TaN gates were fabricated and characterized in order to compare ZrO/sub 2/ and nitrogen-incorporated ZrO/sub 2/ (ZrO/sub x/N/sub y/) gate dielectrics (EOT/spl sim/10.3/spl Aring/). ZrO/sub x/N/sub y/ devices demonstrated excellent thermal stability, comparable leakage current, higher breakdown field, decreased subthreshold swing, and improved drive current over ZrO/sub x/ devices. Polysilicon-gated NMOSCAPs were also fabricated to investigate the compatibility of ZrO/sub x/N/sub y/ with the poly process (EOT/spl sim/19/spl Aring/), but high leakage and TEM analysis revealed interaction between the poly and ZrO/sub x/N/sub y/. More »»
K. Onishi, Kang, C. Seok, Choi, R., Cho, H. - J., Dr. Sundararaman Gopalan, Nieh, R., Krishnan, S., and Lee, J. C., "Effects of high-temperature forming gas anneal on HfO/sub 2/MOSFET performance", in VLSI Technology, 2002. Digest of Technical Papers. 2002 Symposium on, 2002.
R. Choi, Onishi, K., Kang, C. Seok, Dr. Sundararaman Gopalan, Nieh, R., Kim, Y. H., Han, J. H., Krishnan, S., Cho, H. - J., Shahriar, A., and , "Fabrication of high quality ultra-thin HfO/sub 2/gate dielectric MOSFETs using deuterium anneal", in Electron Devices Meeting, 2002. IEDM'02. International, 2002.
R. Nieh, Onishi, K., Choi, R., Dharmarajan, E., Dr. Sundararaman Gopalan, Kang, C. S., and Lee, J. C., "HIGH-K GATE DIELECTRICS: Hf02, ZK> 2, AND THEIR SILICATES", in Rapid Thermal and Other Short-time Processing Technologies II: Proceedings of the International Symposium, 2001.
R. Nieh, Onishi, K., Choi, R., Cho, H. - J., Kang, C. Seok, Dr. Sundararaman Gopalan, Krishna, S., and Lee, J. C., "Performance effects of two nitrogen incorporation techniques on TaN/HfO2 and poly/HfO2 MOSCAP and MOSFET devices", in Extended Abstracts of International Workshop on Gate Insulator. IWGI 2001 (IEEE Cat. No.01EX537), 2001.[Abstract]
In the coming MOS generations, scaling trends will force the replacement of SiO/sub 2/ as the gate dielectric. Due to constraints - primarily high gate leakage current - SiO/sub 2/ will likely be replaced by a high dielectric constant or high-k material. This paper will attempt to address some of the high-k material concerns by presenting promising results on HfO/sub 2/ stack structures with two forms of nitrogen incorporation - surface nitridation and top nitridation. More »»
H. J. Cho, Kang, C. S., Onishi, K., Dr. Sundararaman Gopalan, Nieh, R., Choi, R., Dharmarajan, E., and Lee, J. C., "Novel nitrogen profile engineering for improved TaN/HfO/sub 2//Si MOSFET performance", in International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224), 2001.[Abstract]
A novel technique to tailor the nitrogen profile in HfO/sub 2/ gate dielectric has been developed. Nitrogen was incorporated in the upper layer of HfO/sub 2/ using a reactive sputtering method, followed by a reoxidation anneal. The resulting dielectrics showed good thermal stability, boron penetration suppression, low interfacial trap density, plus lower hysteresis and improved MOSFET characteristics, in comparison to both non-nitrided and bottom nitrided (via Si-surface nitridation with NH/sub 3/) devices. More »»
K. Onishi, Kang, C. Seok, Choi, R., Cho, H. - J., Dr. Sundararaman Gopalan, Nieh, R., Dharmarajan, E., and Lee, J. C., "Reliability characteristics, including NBTI, of polysilicon gate HfO/sub 2/ MOSFET's", in International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224), 2001.[Abstract]
The performance of polysilicon gate HfO/sub 2/ MOSFET's is discussed in terms of gate leakage current and the effects of NH/sub 3/ surface nitridation on boron penetration and carrier mobility. Negative bias temperature instability (NBTI) on HfO/sub 2/ PMOSFET's was evaluated for the first time. Although surface nitridation enhanced NBTI degradation, HfO/sub 2/ PMOSFET's without nitridation show sufficient NBTI immunity. More »»
K. Onishi, Kang, L., Choi, R., Dharmarajan, E., Dr. Sundararaman Gopalan, Jeon, Y., Kang, C. Seok, Lee, B. Hun, Nieh, R., and Lee, J. C., "Dopant Penetration Effects on Polysilicon Gate HfO\~ 2 MOSFET's", in Symposium on VLSI Technology, 2001.[Abstract]
Effect of dopant penetration on electrical characteristics of polysilicon gate HfOz gate dielectric MOSFET's has been studied quantitatively, for the first time. Significant boron penetration was observed at high temperature dopant activation, which degrades not only flatband voltage (V,) but channel carrier mobility. Surface nitridation prior to Hf02 deposition can suppress boron penetration along with equivalent oxide thickness (EOT) reduction. More »»
R. Choi, Kang, C. Seok, Lee, B. Hun, Onishi, K., Nieh, R., Dr. Sundararaman Gopalan, Dharmarajan, E., and Lee, J. C., "High-quality ultra-thin HfO/sub 2/ gate dielectric MOSFETs with TaN electrode and nitridation surface preparation", in 2001 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.01 CH37184), 2001.[Abstract]
A surface preparation technique using an NH/sub 3/ anneal has been investigated to reduce interface reaction and consequently the equivalent oxide thickness (EOT) of hafnium oxide for alternative gate dielectric applications. MOSCAPs and MOSFETs were fabricated on the NH/sub 3/ nitrided substrates with HfO/sub 2/ dielectric and TaN gate electrode. Using this nitridation technique, EOT of as thin as 7.1 /spl Aring/ with 10/sup -2/ A/cm/sup 2/ at -1.5 V was obtained. Furthermore, excellent device characteristics and reasonable reliability have been achieved. More »»
Dr. Sundararaman Gopalan, Dharmarajan, E., Nieh, R., Onishi, K., Kang, C. S., Choi, R., Cho, H., and Lee, J. C., "Ultrathin Hafnium Silicate Films with TaN and Polysilicon Gate Electrodes for Gate Dielectric Application", in 32nd IEEE Semiconductor Interface Specialist Conference, Washington DC, 2001.
R. Nieh, Qi, W. - J., Lee, B. Hun, Kang, L., Jeon, Y., Onishi, K., Dr. Sundararaman Gopalan, Kang, C. Seok, Dharmarajan, E., Choi, R., and , "PROCESSING EFFECTS AND ELECTRICAL EVALUATION OF Z1O2 FORMED BY RTP OXIDATION OF Zr", in Low and High Dielectric Constant Materials: Materials Science, Processing, and Reliability Issues: Proceedings of the Fifth International Symposium, 2000.
W. - J. Qi, Nieh, R., Onishi, R., Lee, B. Hun, Kang, L., Jeon, Y., Dr. Sundararaman Gopalan, and Lee, J. C., "Temperature effect on the reliability of ZrO2 gate dielectric deposited directly on silicon", in 2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059), 2000.[Abstract]
Temperature effect on the reliability of ZrO2 gate dielectric has been presented. High effective voltage-ramp breakdown field was observed. The activation energy of temperature accelerated voltage-ramp breakdown calculated from Arrhenius plot indicates that the breakdown of ZrO2 is less sensitive to temperature than a thermal oxide of similar electrical thickness. ZrO2 films exhibit excellent TDDB characteristics with low charge trapping and no stress induced leakage current. The field and temperature acceleration for TDDB for the 15.8 Å capacitance equivalent oxide thickness (CET) ZrO2 shows that the activation energy for TDDB falls into the range reported for oxide from 39 Å to 150 Å. It was found that the extrapolated 10-year lifetime operating voltage can be as high as -1.9 V, even at 150°C based on the "log(tBD) vs E" extrapolation model for a film with a CET of 15.8 Å More »»
L. Kang, Jeon, Y., Onishi, K., Lee, B. Hun, Qi, W. - J., Nieh, R., Dr. Sundararaman Gopalan, and Lee, J. C., "Single-Layer Thin HfO\~ 2 Gate Dielectric with n+-Polysilicon Gate", in SYMPOSIUM ON VLSI TECHNOLOGY, 2000.[Abstract]
MOSCAPs and MOSFETs of a single-layer thin HfO2 gate dielectric with n+ polysilicon gate were fabricated and characterized. Polysilicon process was optimized such that leakage current and equivalent oxide thickness of HfOz remained low. Excellent C-V properties (e.g. low Dit and frequency dispersion) and reliability characteristics were obtained. Reasonable MOSFET quality was also demonstrated. More »»
L. Kang, Onishi, K., Jeon, Y., Lee, B. Hun, Kang, C., Qi, W. - J., Nieh, R., Dr. Sundararaman Gopalan, Choi, R., and Lee, J. C., "MOSFET devices with polysilicon on single-layer HfO/sub 2/ high-K dielectrics", in International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138), 2000.[Abstract]
MOSFETs and MOSCAPs of a single-layer thin HfO/sub 2/ gate dielectric with dual polysilicon gate were fabricated with self-aligned process and characterized. Polysilicon and dopant activation processes were optimized such that leakage current and equivalent oxide thickness (EOT) of HfO/sub 2/ remain low (EOT of 12.0 /spl Aring/. HfO/sub 2/ with 1/spl times/10/sup -3/ A/cm/sup 2/ at Vg=1.0 V). Reasonable N- and P-MOSFET characteristics such as subthreshold swing of 74 mV/decade and output currents were also demonstrated. More »»
B. Hun Lee, Choi, R., Kang, L., Dr. Sundararaman Gopalan, Nieh, R., Onishi, K., Jeon, Y., Qi, W. - J., Kang, C., and Lee, J. C., "Characteristics of TaN gate MOSFET with ultrathin hafnium oxide (8/spl Aring/-12/spl Aring/)", in Electron Devices Meeting, 2000. IEDM'00. Technical Digest. International, 2000.
L. Kang, Lee, B. - H., Qi, W. - J., Jeon, Y. - J., Nieh, R., Dr. Sundararaman Gopalan, Onishi, K., and Lee, J. C., "Highly reliable thin hafnium oxide gate dielectric", in MRS Proceedings, 1999.[Abstract]
HfO2 is the one of the potential high-k dielectrics for replacing SiO2 as a gate dielectric. HfO2 is thermodynamically stable when in direct contact with Si and has a reasonable band gap (∼5.65eV). In this study, MOS capacitors (Pt/HfO2/Si) were fabricated by depositing HfO2 using reactive DC magnetron sputtering in the range of 33∼135Å followed by Pt deposition. During the HfO2 deposition, O2 flow was modulated to control interface quality and to suppress interfacial layer growing. By optimizing the HfO2 deposition process, equivalent oxide thickness (EOT) can be reduced down to ∼11.2 Å with the leakage current as low as 1X10−2 A/cm2 at +1.0V and negligible frequency dispersion. HfO2 films also show excellent breakdown characteristics and negligible hysteresis after high temperature annealing. From the high resolution TEM, there is a thin interfacial layer after annealing, suggesting a composite of Si-Hf-O with a dielectric constant of ≈ 2 X K SiO2. More »»
J. - H. Lee, Chen, T. - S., Balu, V., Han, J., Mohammedali, R., Dr. Sundararaman Gopalan, Wong, C. - H., and Lee, J. C., "Study of Rf-Sputtered Ba (Zr x Ti 1- x) O 3 Thin Films for Ulsi Dram Application", in MRS Proceedings, 1998.[Abstract]
Barium zirconate-titanate (Ba(ZrxTi1−x)O3, BZT) films with thickness around 60 nm were deposited on Ir substrates using RF magnetron sputtering. The effect of zirconium atomic fraction (x = 0.14 to 0.7), substrate temperature (380 °C to 550 °C) and oxygen partial pressure (0 to 5 mTorr with total pressure 30 mTorr) on leakage current, dielectric constant and dielectric dispersion (capacitance reduction with increasing frequency) was studied. We found that the Zr/Ti ratio played a crucial role in determining the dielectric constant and dispersion. The dielectric constant varies from 26 to 168 while dispersion ranges from 0.80 to 2.58 % loss in capacitance (dielectric constant) per decade of frequency. Low leakage currents (< 1× 10−7 A/cm2) were observed. More »»
K. Onishi, Kang, C. Seok, Choi, R., Cho, H. - J., Dr. Sundararaman Gopalan, Nieh, R., Dharmarajan, E., and Lee, J. C., "Reliability Characteristics, Including NBTI, of Polysilicon Gate HfO\~ 2 MOSFET's", in INTERNATIONAL ELECTRON DEVICES MEETING, 1998.
H. - J. Cho, Kang, C. S., Onishi, K., Dr. Sundararaman Gopalan, Nieh, R., Choi, R., Dharmarajan, E., and Lee, J. C., "Novel Nitrogen Profile Engineering for Improved TaN/HfO\~ 2/Si MOSFET Performance", in International Electron Devices Meeting, 1998.


text:
Unsurpassed in beauty and craftsmanship, these nylon indoor flags are manufactured to precise specifications. Expertly crafted using 100% heavyweight, 200-denier nylon bunting, and treated to resist sun and chemical deterioration. All indoor nylon flags have a pole hem, and leather tab for mounting to an indoor flag set. Gold fringe add-on is optional.
The flag of the state of Vermont features the state coat of arms on an azure field. This flag was adopted on June 1st, 1923.

subset: commoncrawl


text:
Series: Fame School: Book 1
By Cindy Jefferies
Currently unavailable on this website
When Chloe gets an audition at Rockley Park Fame School, she might just realise her dream – but will she be so nervous and starstruck that her talent can't shine through? Talent, stardom, hard work and heartache ... welcome to Fame School! Getting a place at Rockley Park school for talented young performers involves struggle and sacrifice, and that's just the beginning! Life at Rockley Park is packed full of new friends, potential enemies, crises and triumphs.
Cindy Jefferies is a fresh and funny voice in children's writing. She comes from a musical background, went to school with Cozy Powell, and was inspired to write Fame School by her involvement with her youngest son's rock band, Stitch. Cindy's varied career has included being a Venetian-mask maker and a video DJ. She decided to write Fame School after experiencing the ups and downs of her children, who have all been involved in the music business. Her insight into the lives of wannabe pop stars and her own musical background means that Cindy knows how exciting and demanding the quest for fame and fortune can be. Cindy lives on a farm in Gloucestershire, where the animal noises, roaring tractors and rehearsals of her son's indie-rock band, all help her write!
Visit www.cindyjefferies.co.uk to find out more.
Read the following reviews or write one of your own.
"Fame School; Reach For The Stars"
This is a great book, I loved it! I read it all in one day because it hooked me in and I couldn't stop reading. It shows determination, compassion, courage, integrity and passion, passion to be who she really wanted to be. Yes she'd like to be famous and rich but what she wanted was to sing and make thousands of people smile and to hold on to her old friends. This book definitely made me smile.
Jessica Coldrey
"fame school reach for the stars"
Chloe totally loves singing and spends hours practising in her bedroom, miming into her hairbrush in front of thousands of imaginary fans. So when she gets the chance to audition for Rockley Park - the school for wannabe pop star - chloe's determined to make the grade. But first she has to persuade her parents that her ambition is for real. She knows it's going to be tough, but life isn't all glitz and glamour.
bethany thompson
"Fame School"
I really enjoyed reading the first Fame School book. Most people would like these books but I would especially recommend them for wannabe musicians or popsters. I have liked the first book so much that I am going to read all the others.
vanessa smith
"Who remembers Fame on television? Even those who are too young will be pleased to welcome Cindy Jefferies' new Fame School series, which will follow Chloe and her friends from their acceptance at Rockley Park School to eventual fame (maybe). The glittery jackets will attract girls who are drawn to follow in Chloe's footsteps. The series has its practical side. Jefferies' children are involved in the music business and she has learned from their experiences. The message is positive and helpful; the story is fast-moving, involving and sure enough to leave readers eager for more."
Adèle Geras, TES
""7+ wannabe pop stars will love this series.""
For links to specially selected websites with video clips and activities or a pronunciation guide for this book, visit the Usborne Quicklinks website.


text:
Vintage Sterling Silver and Turquoise Cuff Bracelet
Vintage sterling silver cuff bracelet with five stunning turquoise stones accented with silver beads and twisted wire. The bracelet measures 5 3/4"on the inside, plus a 1 3/8" gap. The face of the cuff is 1 3/4" tall. The bracelet is guaranteed to be sterling silver.
Viewing An Online Item In Store
In order to view any of our online pieces in store, please contact us ahead of time. Our inventory is kept in a separate location and it takes time to prepare and arrange for you. Thank you!


text:
Let bookstores compete to buy back your used textbooks
Sell back your used textbook for the top price12 Mar
- Categories College Textbook Information
Latest Posts
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text:
Commit 7be01d72 authored by Committed by Brian Cameron
Changed default face directory to EXPANDED_DATADIR/pixmaps/faces since
Thu Mar 10 17:50:00 2005 Brian Cameron <firstname.lastname@example.com> * daemon/gdm.h, config/gdm.conf.in: Changed default face directory to EXPANDED_DATADIR/pixmaps/faces since putting the faces subdirectory in pixmaps simply makes more sense. * Makefile.am, acconfig.h, configure.in, gdmsetup-security.in, daemon/Makefile.am, daemon/gdm.h, daemon/gdm.in, daemon/slave.c, gui/Makefile.am, gui/gdmsetup.c, gui/greeter/Makefile.am, gui/greeter/greeter.c: Changed the way GDM files are installed. Now all programs intended to be run by root are in EXPANDED_SBINDIR (gdm/gdm-binary/gdmsetup), all programs that are not intended to be run by end-users are in EXPANDED_LIBEXEC (gdmchooser/gdmgreeter/gdmlogin). Removed gdmconfig wrapper script and gdm Xnest symlink since they only serve to clutter the filesystem. I announced this change in the 18.104.22.168 release notes and will be bumping the next release to 2.6 because of this change and the change to the default face directory. * configure.in, gui/faces/*: Add default faces. Images provided by Jaap A. Haitsma. Refer to bugzilla bug #149838. * gui/gdmphotosetup.c: Now browser will look in the system face directory first, in EXPANDED_DATADIR/pixmaps if the default face directory does not exist. * config/Makefile.am: Changed name of Default to Init since that follows the naming standard used by the other scripts. Fixes bug 118278. * docs/C/gdm.xml: Updated docs with information about the changes in today's commits.
parent 5a6d64f4
Showing with 344 additions and 338 deletions
config/Default.in deleted 100644 → 0


text:
Phone Accessory List
This is a sampling of headsets that are compatible with the campus phones and can be ordered through Staples. Prices shown below are approximate.
Please search the Plantronics website for additional headset styles. Select Desk Phone, Vendor Cisco, Model 7940/7960/7942G/7962G.
Encore Noise-Canceling (dual earpiece)
Price: $247.00
Product Number: PLNH101N
Note: Headset requires a Quick Disconnect Adaptor
SupraPlus Noise-Canceling (single earpiece)
Price: $171.00
Product Number: PLNH251N
Note: Headset requires a Quick Disconnect Adaptor
Mirage Noise-Canceling
Price: $190.00
Product Number: PLNH41N
Note: Headset requires a Quick Disconnect Adaptor
Quick Disconnect Adaptor
Price: $21.85
Product Number: PN-PLN2671601
This Headset adaptor is required for every headset. A headset adaptor connects the headset to the phone providing users the ability to disconnect quickly. This cord also provides users with a quick disconnect lock.
Wireless Headset
Plantronics Cordless Headset System CS10
Price: $513.00
Product Number: PLNCS55
Plantronics Cordless Headset System CS10 combines the 900 MHz cordless CA10 amplifier and the convertible noise-canceling headset, monaural (single earpiece over the head design or over the ear single earpiece design ) to deliver hands-free mobility with range of up to 150 feet from the base unit. Connects to single or multi-line corded telephones.
Headset Handset Lifter
Plantronics HL10 - Handset Lifter
Product Number: PLNHL10
Price: $123.50
This lifter fits on your phone, letting you answer calls with the touch of a button. It conveniently and automatically takes your handset off hook. This works in conjunction with the wireless headset to allow full call receiving and placing functionality.
Vista M22 Audio Processor with Clearline audio
Price: $219.99
Product Number: PLNM22
Shoulder Rests
Short Shoulder Rest
Price: $11.99
Product Number: SOF-301
Long Shoulder Rest
Price: $11.50
Product Number: 71998-01
Handset Curly Cord Extra Long
25 Foot Telephone Handset Coiled Cord Black
Price: $2.59
Product Number: 75189-00
External Ringers
Price: contact the Macdesk on-line request application.
Product Number: N/A
Loud bells are useful in areas where there is significant noise to prevent you from hearing the ringer of a regular phone. Loud bells can also alert you to a call when you are routinely away from your phone and in an area without access to phones, e.g. parking lot.
Note: A loud bell requires an analog line.
Each phone model has a dedicated headset port, this eliminates the need for a separate amplifier when using a headset. The handset remains in its cradle making the headset simpler to use. Both the 7940 and 7960 models have a convenient volume control button that provides for easy decibel-level adjustments for the speakerphone, handset, headset, and ringer. A headset adaptor is required for each headset to allow connectivity to the phone.
Wireless Headsets
Wireless headsets are compatible with the 7940 and 7960 phone models. A wireless headset does not use the headset port, but rather a direct connection to the phone's handset. Please refer to the documentation provided with the unit or call extension 58888 for assistance. When ordering a wireless headset a separate adaptor is not required. This adaptor is included with the unit .
More than ten headsets are not recommended in a common area. Some office areas may not be conducive to wireless headset use as the physical building environment may reduce the signaling quality.
The new phones have a built-in amplifier. However, in special cases where amplifiers are warranted, users are to contact the MACdesk on-line request application before ordering this type of product.
Handset Shoulder Rest
It is not recommended to purchase shoulder rests for the new phones due to ergonomic reasons such as, awkward posturing of the head, neck and shoulders. An alternative to using a shoulder rest would be a speakerphone or wireless headset. The standard new phone includes a premium speakerphone allowing users to communicate in a 2-way conversation. Another option is to use a wireless headset which avoids awkward and prolonged static postures and offers more flexibility to move around.
In situations where a handset shoulder rest is required, it should be attached directly to the handset with the use of double sided tape. This tape is included with your purchase of a handset shoulder rest.


text:
Download Ace2.dll and fix "dll not found" error!
What is Ace2.dll?
Ace2.dll - dll file called "MathConnex Language DLL" is a part of MathConnex program developed by Mathsoft Engineering & Education, Inc..
Some applications or games may need this file to work properly. If ace2.dll is missing, whenever you start the application/game you may experience various kinds of errors. To fix those errors, please read the Recommended Solution below.
- File version: 18.104.22.168
- File size: 176.06 KB
- MD5 file sum: 67FD758053A302CBA7F6E70A1D900C8C
- SHA1 file sum: BCC06B4663410934A03ADD9BF206946B059F0740
Ace2.dll Error Screenshot
Possible error messages regarding this file:
- ace2.dll is missing
- ace2.dll error loading
- ace2.dll crash
- ace2.dll was not found
- the procedure entry point ace2.dll
- ace2.dll could not be located
- ace2.dll Access Violation
- Cannot find ace2.dll
- Cannot register ace2.dll
Recommended Solution to Fix Dll Error
To fix errors related with .DLL file you need to download ace2.dll and copy it to the installation folder of the application or game, or copy it into the Windows system folder and it should fix the error. If you don't know how to install this file, please read our tutorial about How to install DLL files.
This page is available in other languages: português | Deutsch | français
You can read more information about ace2.dll on WikiDll.com


text:
Stove Repair Adelaide
Our stove repair Adelaide service spanning Adelaide and nearby suburbs providing fast, affordable repairs our customers have been able to count on. Repairing stoves is something we were born to do, and our large team of technicians believes in our vision of over-delivering and making sure you're 100% satisfied well-after we're gone.
We stand behind our work and we only employ qualified stove repair technicians who are properly certified to work on all major appliances.
Besides stoves, we also repair other major appliances including:
- Dishwasher
- Dryer
- Garbage disposal
- Fridge
- Microwave
- Oven
- Washer
When it comes to fast in-home service, our Adelaide stove repair team has been able to build a great reputation over the years. With years of experience and become known for providing reliable, fast and affordable stove repair in Adelaide, give us a call if you want your dishwasher fixed the right way.
We continually strive for 100% customer satisfaction on every service call and stand behind our work. Don't let the stress of a broken stove get in your way, call us and leave it to our team of dedicated professionals.
Adelaide Stove Repair Brands We Service
We service the following stove brands and many more.
AEG, Amana, Ariston, Baumatic, Beko, Blanco, Bosch, Chef, DeLonghi, Electrolux, Euromaid, GE, Hoover, Jenn-Air, Kleenmaid, Lemair, LG, Maytag, Omega, Panasonic, Samsung, Siemens, Simpson, Speed Queen, Technika, Westinghouse, Whirlpool, and more.
We aim for same day service on all service calls, but many factors play into this. Why not give us a call and find out when we can be there to get your stove fixed.
Stove Repair Adelaide Suburbs We Service
Our stove repair team provides in-home service in South Australia for the suburbs around Adelaide:
Adelaide Appliance Repairs Service
Level 3, 169 Fullarton Road
Dulwich South Australia 5065, Australia
(08) 7111 3811


text:
I have been prepping for over two decades now, although some would say I have been prepping my whole life. Both sets of grandparents instilled into my parents the need to be prepared, and in turn they did the same for my siblings and me. I am the only one of my siblings who has taken it to this high a point, even though they are probably more prepared for a major event then 99% of the rest of America. My definition of prepping is, I think, a little different than most. I define my families prepping as being prepared for anything, not just TEOTWAWKI [1]. What I mean is if we had a hurricane, tornado, a major illness causing loss of income, or whatever the world has to throw at us, we are ready for it. Now I know you can be ready for everything, but you can be prepared to handle the aftermath!
Both of my grandfathers were true craftsman. My maternal grandfather lied about his age to get into the U.S. Navy at age 16 during World War II; he was a mechanic on the USS Texas, after the war he stayed in the same field working on large diesels for the railroad then for Ryder Trucks. My patriarchal grandfather worked for the railroad from the age of 17 until he retired as a carpenter. He had a back injury from a car accident as a child that caused him to be hump backed, disqualifying him from the war; however he was an avid hunter, fishermen, and a phenomenal carpenter. My father is a structural engineer, self-employed, and a Vietnam Vet. I grew up around all of these strong Christian men to grow up around, spending alternating summers in the hills of North Carolina and the woods of East Texas staying on the gulf-coast of Texas during school.
The women in my life were also very influential I remember my grandmothers praying over me when I was sick before ever calling a doctor or getting me a Tylenol for a fever. They also taught me to "put up" food, when I was younger I loved being in the kitchen with them after taking in a bushel of something from the gardens. They would put a side what would last without spoiling and start whatever process was need to store the rest. They always taught me, "Whether for us or others God has a plan for this food." I learned to make homemade biscuits and other breads, how to grow spices and dry them, and most of all how to make what you had last. It still amazes me to think back at the huge family meals we had, all from their cupboards.
It has been my family's goal to never have the worry of need. If the worst where to happen we would not need to go to a store or barter for close to three years at this point. And then includes my family of 5, our parents 4, and our siblings their spouses and children 10. We do have some long term freeze dried food, but at least half of what we have is canned or prepared by my family.
Now in our version of prepping we are not talking about just food, we all know the "Bs" I would say three but there have been so many added to the original trinity of prepping "Bs" that I cannot even remember them all. We have enough medical supplies to stock a nice hospital emergency room, enough arms and ammo to keep all of our family from being liberated of our items, and we are currently building our retreat including a completely off grid setup.
In everything we store, stock, or purchases for our lives we try to find things that can be truly multi-purpose and last for a long time; for example we stock large quantities of grain alcohol as it can help clean for medical reasons, help start fires, and help warm the soul if need be.
Now to the point of this whole thing, I have read Survival Blog for years now, and have seen small articles or quick mentions of tools here and there, and I wanted to go into a little more detail and thought into prepping your tool shed.
First and foremost, buy quality! Yes you can go pick up four screwdriver sets a Wally World for what one quality set cost you at Sears, but truth be told most of us would not pick up four sets, and when you are on a roof, under the car, or even under fire and your tool breaks, it doesn't matter you could have picked up four sets. All that matters then is you have a broken cheap tool.
Don't judge quality by a life time warranty. There are a lot of tools out there that come with a "life time" warranty, but most of those do cover our stupidity of using a screwdriver as a chisel, and most of those require you mail the broken product off and wait 90 plus days for them ship you a replacement. We all know the Craftsman hand tool warranty, bring in the broken tool and they will give you a replacement. I do have to warn you though there are some poorly made Craftsman tools out there, so be sure you handle the tool and check it out. I have even been known to do some research online to check out the reviews before purchasing.
If it is important, get more than one. Like I said earlier if you are on the roof and your hammer breaks, it would really bite to have to go to the store, if you can, to get another one. Even though modern tools are more durable than they use to be, they can still break. Put enough force on those modern fiberglass handles and they will break. I broke a shovel handle, by having a cinder block fall two stories on to it. The falling cinder block is a whole other story, but the point is the shovel handle broke. I have multiple shovels, hammer, screw driver sets, chisels, wrenches, pliers, etc. I even have extra handles for my tools, and some quality lumber stored that I could turn into a handle if need be.
Figure out what you are going to do when the power is out. When buying power tools be sure you don't have to fully rely on plugging them in. First with hand power tools, if you are without power you are pretty much out of luck. That doesn't mean you shouldn't have them, it just means you should be ready to be without them. Be sure you have a couple of different handsaws, hand drills, hand planes, pretty much any powered hand tool you get be sure you have a backup. I was lucky to inherit both of my grandfather's tools; it was amazing to find tools from my great-great grandfathers tools mixed into these that still worked and sometimes did a better job than any new tool. As for battery powered tools, these can be a good alternative, but not the only backup. You could setup a fueled or solar generator to power the tools or charge the batteries when need be, but the system could break down, so don't have these as your only backup. Be sure you have plenty of extra batteries and extra cells. By cells I mean inside of each battery pack there is a group of smaller cells, which most look like C-Cell batteries, but note they are not. Do a little work on Google and you will find the replacement cells for your battery pack. When one of the batteries fail it usually only a single cell or two inside the pack that have actually failed; it is a simple thing to replace one of the cells if you know how to check them and solider in the new one. When it comes to power tools, both plug in and battery powered try to stay in the same brand. Sometimes there are parts that could be interchangeable if one breaks down, and if you stay with the same battery types it will save you a lot of headaches of dealing with multiple chargers and batteries. It is so nice to only worry about one battery. Finally stand tools. There is nothing nicer than having a good table saw, band saw, chop saw, and drill press, but what are you going to do when the power is out? During my summers in North Carolina, there was an old water powered mill. It was the most fascinating thing to see all these pulleys and belts humming all over the place. This has always been in my head when buying stand tools. Be sure the system is a pulley and belt and not a direct drive type; if need you can convert the power source from the electric motor to some alternative input. I have done a little experiment with a windmill and my table saw. After figuring out the gearing and going a little slower that I am use to, I was cutting ¾ inch plywood smooth and clean. Buy extra brushes, cords, and any other serviceable parts for all of your power tools. As with in other prepping put some thought into, so you can get the life you need out of.
Figure out what else you can do with it. Multi-purpose should always be thought about. One of the best examples I could ever give is back to my shovel. We were about to dry our clothes, when we found a wind storm had broken one of our clothes line poles the night before. For a quick fix, since we had wet clothes. I stuck the shovel in the ground and tied the clothes line off to it. Don't ever look at anything as a single purpose item; of course this doesn't mean miss use a tool, like a gun butt does not make a good hammer, but always be aware of your tools how they work, and what else you can do with them. Clamps have a 101+ uses, maybe this will be my next letter, screw drivers in a pinch can be used a wedge, pliers can go from the garden to the car to your mouth if need be. A drill can power things from a coffee grinder to an ice cream maker, or a meat grinder to a water pump, I have even powered a chicken plucker with a hammer drill before. There are even now power tools that have interchangeable heads. The one I purchased has a drill, jig saw, electric hammer, socket driver, sanding pads, and cut-off blade; there was also a battery powered version that used the same batteries as my other tools. So with two tools I have 6 tools both plug-in and battery powered so really 12 different tools.
If you can't find your tools you might as well not have. You shouldn't be without is a good toolbox. Now I am not talking about a little portable hand tool box, which you should have a few of as well, I am talking about a large multi-drawer/cabinet toolbox. Have a nice place to put your tools. Be sure to keep some desiccant in the drawer to try and keep moister down. I know the cost of these can be high, but a good quality nice looking toolbox, make you proud of your tools, and in turn helps you want to keep them organized, clean and put away.
Take care of them and keep them clean. I remember my grandfather taking is air-tools apart cleaning, greasing, and oiling them. I also remember him wiping down and oiling his hammer, screw drivers, wrenches. I know some of our tools today are made of products that will not rust, but most just have some coating or covering on them and when scratched can start to rust. A simple wipe down with oil will help the metal will last for a lot longer. Furthermore if you are storing some tools stock, just like your guns, keep them oiled, when you go to use them it could be the difference in a quality tool and a wrench so rusted to slips around the nut. In the tools I inherited from my grandfather there where some of the first Craftsman power tools, the old chrome ones, which still worked! There were hand tools with their original boxes that if the cardboard wasn't yellowed you would have had no idea they were well used. A good tool taken care of will last several life times.
Don't forget the big guys. Now let's talk about a few big items I don't think we should be without. One of the most important big tools, in my humble opinion, is a diesel welder/generator. This item covers so many bases I think there are too many list, but luckily I also think it is self-explanatory. Now the welder/generator should not be your primary generator, but a backup one that can also weld. Next would be a compressor. A single compressor can power a huge amount of air tools, as well as just having the high pressure air to clean, feel tires, and more. With the compressor be sure to have extra hoses and fittings. I also love the Shop-Smith multi-tool; however I do not own one. I have recently used a newer one and was very pleased with its performance, my only two complaints were one it was a little cumbersome to switch between tools and two if it breaks down all your tools are out of commission. For the amount of room it took up compared to the tools it replaced I think it might soon be an addition to my shop. As for the compressor and Shop-Smith they both can be powered by alternative power from wind and water, to solar or fueled generator, so be sure you have a backup to power them.
Know your tool, know your environment. Make sure you have the proper place to use your tools. A lot of tools create a lot of dust or fumes, be sure you have a well ventilate place to use your tools. Be sure you have a secure safe place to use your tools. And most important be sure you know how to properly use your tools. I have watched so many "reality" shows that by the end I am amazed the people are still alive. Read the manuals, know when and what to oil, how to sharpen, how to change accessories, what and how to wax, and most important simply how to use it.
In my opinion all of what I have said is just common since, but sometimes you just have to hear it or see it, for to sink in. Being prepared for anything includes being able to fix a squeaky door, level a floor, or performing a head job on your truck. Whatever it is you will need the right tools and in working order. Put some thought into and the end game will be just that much easier.


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Hupy and Abraham to Sponsor 2014 Milwaukee Rally and Cash Giveaway
The annual event takes place at Harley-Davidson dealerships over Labor Day weekend.
The personal injury law firm of Hupy and Abraham, S.C. will be the main sponsor for the 2014 Milwaukee Rally and the "Run for Cash" $5,000 cash giveaway. Harley-Davidson riders and supporters will be heading toward Milwaukee for the largest free motorcycle rally in the Midwest. Geared toward Harley enthusiasts, all brands and riders are welcome to come together and celebrate Harley-Davidson — which was founded in Milwaukee.
The rally has events spanning across five area dealerships and the Harley-Davidson Museum and will feature live music, food, and vendors for four days of fun over Labor Day weekend. This year's rally will include a full list of activities that include a bikini bike wash, a pancake breakfast, a free tattoo from Milwaukee Ink and many more fun things to do.
Thursday, August 28, marks the official start of the rally, but a kickoff celebration will take place at 5 pm Wednesday night at Quaker Steak & Lube in New Berlin. The Harley-Davidson Museum is hosting live music and unveiling the 2015 Motorcycle Display Thursday evening. Some of the notable music acts include Tangle Foot and Crazy Mouth.
Hupy and Abraham is the sole sponsor of the popular "Run for Cash which has a first place prize of $5,000. Riders will be able to get a special passport that needs to be stamped at each of the Milwaukee Rally locations. After all five stamps are received, riders will be eligible for a drawing where winners will be randomly selected.
Milwaukee Rally Locations: Suburban Motors, Milwaukee Harley-Davidson, Hal's Harley-Davidson, House of Harley-Davidson, Wisconsin Harley-Davidson and the Harley-Davidson Museum.
All activities are free, but patrons can purchase tickets ranging from $10 to $29 for souvenirs and other items. For more information, visit www.milwaukeerally.com
This weekend especially, Hupy and Abraham, S.C. would like to remind motorists to "Watch For Motorcycles." The firm has been telling motorists to "Watch For Motorcycles" for years in an attempt to reduce the number of accidents and injuries to motorcyclists. The campaign has reached over 10 million people through newspaper ads, TV and radio public service announcements, bumper stickers and airplane banners. Visit any of the local dealerships this weekend, or Click Here to get your free 'Watch For Motorcycles" sticker.
Hupy and Abraham, S.C.
Founded in 1969 in Milwaukee, Wisconsin, personal injury law firm Hupy and Abraham, S.C. has a proven record of success with large settlements in serious cases, collecting $100s of millions for 1,000s of satisfied clients. The firm has a long-established reputation of providing sound legal representation to accident victims, securing fair compensation for its clients and giving back to the community.
The law firm, which has eleven offices located in Wisconsin, Illinois and Iowa, handles personal injury cases including car accidents, motorcycle accidents, wrongful death and pharmaceutical and medical device class actions.
The firm's 17 experienced attorneys are committed to going above and beyond the call of duty for their clients by tirelessly representing them to the best of their ability while being involved in the local community—from raising funds for local charities to participating in safety and accident prevention initiatives. In the past three years, the firm has donated more than $500,000 to more than 100 worthwhile causes.
Hupy and Abraham, S.C. has received top ratings from a number of national and local professional organizations for many years and was voted Best Personal Injury Lawyers by the readers of the Shepherd Express in 2011, 2012 and 2013 and named Best Personal Injury Law Firm by voters in the WISN A-List poll in 2012 and 2013.
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Technology giant IBM has recently launched two programmes—one is IBM Partners, a digital self-service platform for its business partners, and the other, the Call for Code Global Initiative, aimed at addressing natural disasters, a report in The Economic Times stated.
As part of IBM Partners, the firm's collaborators can develop and sell their solutions and help them grow their businesses. The platform will also provide its partners access to technologies such as blockchain, IBM's cloud, and artificial intelligence platform Watson. Presently, it is available for IBM's European customers, the report added.
Last month, IBM launched the Call for Code Global Initiative, a five-year programme that will bring together startup, academic and enterprise developers who will tap into data and AI, blockchain, cloud and Internet of Things technologies to address social challenges, the company had stated in a press release.
IBM has partnered with the United Nations Human Rights Office and American Red Cross for Call for Code. They will help frame the challenges and judge the coders' solutions.
In India, Call for Code will take place next month in Pune, Hyderabad, Bengaluru, and Gurugram.
"Broadly, Call for Code focuses on the development of innovative solutions that reduce human suffering and the number of people affected by natural disasters, " Seema Kumar, head of the developer and startup ecosystem group for IBM India and South Asia, was quoted as telling ET.
The participants in the challenge can avail of open source IBM Code Patterns, IBM Cloud, Watson, Blockchain and IoT technologies to build their solutions, the report added.
"In India, we are looking at developers to come up with solutions for floods, earthquakes, drought, tsunami, cyclone storms, avalanches and landslides," added Kumar, while speaking to ET.


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There are few things as beautiful as the way a bride smiles on her wedding day. A wedding begins long before the big day and capturing those beautiful moments is a pleasure!
A photographer at heart since the age of eighteen, Shehadeh has an eye for beauty, light & composition that differs him from anyone else. Shehadeh's background in graphic design, project management and music provided an ideal ground for his transition to wedding photography.
"My relationship with music and knowing when significant parts of a song are coming helps me to capture a wedding's amazing moments once in a life time."
Shehadeh naturally makes a bride feel at ease with his calm nature and heartwarming smile while using the sense of humor to get her excited on her wedding day. The result is a bunch of magical shots to be remembered forever!
"Confidence is the key! And I love to take each wedding to be a new challenge. A challenge to show the best of the wedding and the best of my talent! I prepare for the shots I want to do ahead of time to be mentally ready and shine in my comfort zone. I am also collaborative and like to work with my team to gather multiple opinions as a guidance to make the most of each moment."


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1. Site overview
Finding a great custom paper writing service right now seems like a very challenging task. This is because of the simple fact that you risk spending your money and wasting time on scammers or maybe some irresponsible paper writing companies that will provide you with either late or plagiarized work.
This service is called EssayTigers.com and here I'd tell you if it is worth using. Is Essaytigers legit? They say yes. The company is on the market for seven years.
Now, look at the main page of this website. It has everything you need from a home page of the paper writing service. It has the price calculator, it has the button to send a free inquiry and above you can already see the phone number of these guys and the promo code to get a 5% essay tigers discount code for your first order. But is Essaytigers reliable after all? Read on to find it out.
Its black-and-yellow design really resembles the colors that you can see on any traditional tiger. I like the design of this website.
Is Essaytigers.com scam? They've got a page that tries to assure a potential buyer that paying for essays is not cheating and does not violate any rules. Additionally, they've included a list of their other advantages like delivering only original papers, providing 24/7 support, offering free revisions or refunds if they fail to complete the order. Anyway, this website is simple to browse and easy to read.
2. Customer support
Basically, the weakest spot of Essaytigers is their Support team. I mean, they are not bad and get the job done when it comes to giving consultation to the buyers; however, these guys have acted very strangely in the chat. Here, check the pic.
So, in total, Kylie has applied the discount for my first order and briefly explained who their writers are. However, her replies were really strange and it felt like she has just been sending templates to my questions.
Also, when she tried to write her own messages, they contained many typos, which is not really a good thing. So, I'd give the Support team 3 out of 5 just because Kylie was really slow and giving strange answers instead of replying adequately.
As for messages in the client's account, these guys replied quite slow too. They have to hire more qualified specialists to give faster answers to buyers.
3. My experience
I needed a 4-page paper on Gender Studies. The topic was supposed to address the differences in salaries of men and women performing the same type of work. The deadline was 2 days. In total, I've paid $100.
The writer promised to write my paper even ahead of the deadline, but he failed. I mean, I've got my paper in time, but I had no chance to check it and had to give it to my professor the way it was. As a result of such a rush, I've got a D-grade. What a failure! I hoped to get the highest grade, but it didn't happen.
4. Order form
The process of making an order is comprehensive. There were no hidden charges and that these guys were not promoting their extras aggressively.
All I had to do is to include all the paper details and pay for the order. That's basically it. As for payment methods, these guys accept both credit cards and PayPal money.
And once you pay, you'll be forwarded to the control panel, where you'll be capable of monitoring your order's current status, communicate with the support and writer. You can also upload the necessary files for the writer after paying for the order. There is a chance to use some of their extras for additional money. Like for example, an Essaytigers plagiarism report can be bought per $9.99.
5. Discounts and pricing
As you can see, the prices start from $10, which is an average price on the market and depending on a deadline and complexity it will go higher. The most expensive papers obviously come from the "Admission Help" category as they are the most complicated types of papers.
Additionally, you can order different types of writers to work on your paper. You either choose a default writer, which will not cost you anything extra or choose Top or Advanced writer. Top Writer's service is the most expensive and Advanced Writer's work is slightly cheaper than this.
What I don't like about this, the exact price of both Top and Advanced writers remains unclear, the website says that "the price is calculated automatically". I mean, it goes without saying that a better writer will charge more but it's really not good leaving the buyers uninformed about the exact price of this extra.
If you want to pay for the Abstract page, you gotta pay $14.99 for it. VIP service also costs $14.99, which means that your order will be the support team's first priority. Additionally, you'll be getting SMS notifications.
At the same time, their prices for plagiarism report depend on the number of pages. The following screenshot tells exactly what are the prices. Still, I wish they would have created a calculator for this, as well.
They don't offer many discounts for both new and returning clients. You might get a 5% discount for your first order and get a slight discount for expensive orders but that's it. This is generally compensated by the loyalty program, which will be discussed further.
6. Revisions
Essaytigers.com offers only 3 free revisions per each order. The revision requests can be sent only in 7 days after the order's approval and in 14 days for orders having more than 20 pages. For someone, such a revision policy may appear rather strict and unfair. I think so too. I failed to ask for revisions because my order came just right by the deadline and I had to bring it to my professor urgently.
7. Final quality
I was sad hearing from my teacher that my paper deserved only the D grade. The paper content was not great and there were some misprints, which influenced the final grade. I am not going to use the service of these guys in the future and I can't recommend you using this writing platform, as well.
8. Writer's proficiency
That's what is written about the Essaytigers' writers on their website:
Though my writer was quite friendly and promised to give back my paper even ahead of the deadline, he failed to keep his promises. I got a lower grade than I expected. It means that my paper was not ideally written. The ghostwriter probably hasn't spent much time on my assignment and used the first info he found on the net. Probably he was in a hurry and made some misprints. Shame on him!
9. People talking
I decided to check Essaytigers reviews on the net. What surprised me the most, these guys have direct links to Sitejabber and Trustpilot, where they continuously gather, monitor and reply to the clients' feedbacks. It's a real rarity that a paper writing service directly forwards you to these sites.
At first, after checking the testimonials published on the main page of Essaytigers.com I felt rather suspicious. Look at this. This section does not contain any negative or neutral essay tigers review, which cannot be true.
Then I've come to Sitejabber and Trustpilot. There were both positive and negative reviews, though the total rating on Sitejabber was quite high – 4.4 stars.
These guys reply to both the positive and negative feedbacks of the customers. The next place I went to check websites rating was Trustpilot. The rating there was 4 stars but what I dislike is that the number of negative reviews was quite high – 35%. There were both satisfied buyers and those who didn't like the quality of ordered papers.
10. Loyalty program
The loyalty program is simple but it gets the job done. It stimulates the clients to make further purchases. They don't offer discounts to the returning clients but they offer a bonus to the clients with each order. The clients get a percentage from their payments stored on their accounts as credit so that they could use it to pay for future orders. Simple as that.
11. Pros and Cons
All in all, my Essay tigers review was written to tell about my experience and their strengths and weaknesses:
- A user-friendly website that contains all the necessary information about the service.
- Easy process of order placing.
- Just 3 revisions per order within 7 days after the order's approval.
- Unclear prices for Advanced and Top Writer.
- Support Team that is rather slow and robotic.
- Low paper quality.


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The Freedom of Information Act (FOIA), first signed into law by President Lyndon Johnson and since amended, allows for the full or partial disclosure of all legislative documents produced within the the United States. The FOIA is intended to promote transparency by the United States Government so that the average citizen can have access to the laws that govern his or her life.
Transparency is an integral part to democracy. Usually the more transparent the Government, the more democratic the nation is. Freedom of information also serves to promote the role of the citizenry in a democracy. The more information a citizen has, certainly provided by FOIA, the better a citizen can decide what legislative polices are right or wrong for the country.
Before 1966, Government documents could be sealed and not released to the public. The FOIA is intended to revisit the freedom of thoughts that the founders of the United States deemed so central to a properly working democracy.
The Freedom of Information Act has undergone a series of revisions over the course of time. As the country has moved forward, so have the problems facing the country. Sometimes the FOIA is not followed. In fact, if it were it could provide the impetus for a series of problems that can befall the country. Most of these cases revolve around the question of national defense and how much information the general public should be allowed to view.
In many cases current defense plans are not disclosed in full, even though contrary to the essence of the Freedom of Information Act, because if defense plans were disclosed in full it could put American lives in jeopardy. That, however, does not mean debating the scope of the FOIA is out of the question. Some legislators believe that it should cover everything as it is an inherent right of the people to know what their government is doing. The opposite side of the argument would bring the question of safety to the table.
Much of the intelligence community of the United States is outside the scope of the FOIA, as the intelligence community runs clandestine operations that, were they to become public knowledge, would jeopardize lives and the nature of being a secret mission. However, one such benefit of the Freedom of Information Act is that many topics not available to the public today will eventually become open to the public in the future.
Many items that the government currently wishes not to disclose can be considered time sensitive. For example, 50 years from now the clandestine operations being conducted by the intelligence community in Afghanistan and Iraq will most likely become public record, much like the operations during World War II are now public record.
Freedom of information is very important to a democracy as it creates a much better informed citizenry. The more aware the citizenry is of government practices, the better the Government as a whole can be tailored to fit the needs of an ever changing world. Moreover, it allows more people to take part in the decision making. This creates a higher level of democracy trying, in essence, to reach a more perfect union the framers so desperately sought.


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About Him
Living… in Cleveland, Ohio. For most of his life, Harvey's lived in terrible neighborhoods: first with his family, then by himself. The city can be the loneliest place in the world when you've got nobody, and weekends – when Harvey can almost feel a body beside him, the way an amputee feels a phantom limb – are the worst.
Profession… hospital clerk by day, comic book writer by night. People think he embellishes the stories, but it's all true: Harvey bases everything he writes on his own life. It doesn't pay enough, though, so Harvey keeps a regular job working at a hospital. He's not passionate about it, but that's only because his heart lies completely in his art.
Interests… old jazz, good books, and making honest art. Getting respect for it, though, is a harder deal when you're doing comics – the first time Harvey went on the David Letterman Show, it became clear pretty fast that he was invited just for laughs. But what the hell did he care? Letterman was an okay guy. Harvey let him take pot shots as long as he got paid and got to plug his comics.
Relationship Status… fine now that Joyce is around. Harvey's been through hell and back with women, but Joyce's the greatest girl he's ever met. She might be eccentric and her clinically depressed was rough on both of them, but Joyce loves him whole-heartedly and Harvey feels the same about her.
Challenge… coming to terms with his legacy. Comics may have brought him fame and money, but it's not a perfect life: "Every day is still a major struggle. Joyce an' I fight like crazy, an' she barely works. The kid's got A.D.D. and is a real handful [....] With a little luck, I'll get a window of good health between retirin' an dyin'."
Personality… wryly depressive. Harvey never makes too much of a fuss about it though, since he decided early on to put it all into his comics. To stave off desperation and feelings of uselessness, he resigns himself to his humdrum existence. But hey, it's not all bad: he's got Joyce, and he's got his strip.
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