Ferroelectric-Antiferroelectric Transition of Hf<sub>1–<i>x</i></sub>Zr<sub><i>x</i></sub>O<sub>2</sub> on Indium Arsenide with Enhanced Ferroelectric Characteristics for Hf<sub>0.2</sub>Zr<sub>0.8</sub>O<sub>2</sub>
ACS applied electronic materials