Role of Oxygen Defects in Conductive-Filament Formation in <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" overflow="scroll"><mml:msub><mml:mi mathvariant="normal">Y</mml:mi><mml:mn>2</mml:mn></mml:msub><mml:msub><mml:mi mathvariant="normal">O</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:math> -Based Analog RRAM Devices as Revealed by Fluctuation Spectroscopy
Physical review applied