Structures photoniques à base de nanocristaux de silicium
There are indications that silicon nanocrystals (nc-Si) exhibit an optical gain that is potentially large enough to enable optical amplification in the wavelength range where intense photoluminescence (PL) is measured (600-1000 nm). We fabricated optical cavities on fused silica pieces ion-implanted with Si in order to form a nc-Si layer with a thickness of about 1 μm. Si was implanted at four energies between 1 MeV and 1.9 MeV to obtain an excess atomic concentration varying between 25% and 30%. The pieces were sandwiched between dielectric mirrors consisting of multilayer interference filters. Over a wavelength range of about 200 nm wide, one filter reflects nearly 100%, while the other one shows an average reflection of 90%. We measured and compared the PL spectra of three samples: the first one with no mirrors, the second one with filters reflecting around 765 nm (between 700 nm and 830 nm), and the third one with filters acting around 875 nm (between 810 nm and 940 nm). When exciting the samples with a pulsed laser, timeresolved PL measurements exhibited faster decay rates in the wavelength domain where the reflection of the mirrors is maximal compared to samples without mirrors. Also, PL intensity as a function of excitation flux showed a faster increase in the presence of mirrors, although the increase remained sub-linear. From this, we conclude that stimulated emission could be present in the optical cavity, but does not dominate the other emission and loss processes.
nanocrystals silicon photoluminescence photoluminescence stimulated emission