Environnement local des défauts structurels et ordre à moyenne portée dans le silicium amorphe
Based on a detailed study of the radial distribution function (RDF) of a model for amorphous sili- con (a-Si), we address the relation between short-range rearrangements and an increase in medium- range order induced by thermal relaxation. Recent experimental measurements have shown that a small peak appears in the RDF around 4.7 Å upon annealing, along with other subtle changes, and this is attributed to ordering among the dihedral angles. We show that, although this is a possible explanation, an increase in short-range order (up to second neighbors) is not only necessary for these changes to occur, but could also be their sole cause. To clarify the nature of disorder in the amorphous system, correlations among dihedral and tetrahedral angles are examined. The bivariate probability distribution of these two variables reveals small correlations between dihedral and te- trahedral angles, associated with the staggered and eclipsed conformations. In the first case, bond angles around 112.5◦ are favored vs. 120◦ in the second case. Bond angles between 95◦ and 100◦ are less probable in both conformations. On another issue, the nature of disorder in amorphous silicon (a-Si) is explored by investigating the spatial ar- rangement and energies of coordination defects in a numerical model. Spatial correlations between structural defects are examined on the basis of a parameter that quantifies the probability for two sites to share a bond. Pentacoordinated atoms are found to be the dominant coordination defects. They show a tendency to cluster, and about 17% of them are linked through three-membered rings. As for tricoordinated sites, they are less numerous, and tend to be distant by at least two bond lengths. Typical local geometries associated to under and overcoordinated atoms are extracted from the model and described using partial bond angle distributions. An estimate of the formation energies of structural defects is provided. Using molecular-dynamics calculations, we simulate the implantation of high-energy atoms in the initial structure in order to study the effect of relaxation on the coordination defects and their environments.
Amorphous silicon Medium range order Structural defects