Dynamique de recombinaison radiative dans les nanofils InGaN/GaN : étude détaillée de la photoluminescence
We have performed time-integrated and time-resolved photoluminescence measurements on four different configurations of InGaN/GaN dot-in-a-wire heterostructures in order to further our understanding of the localization and radiative recombination mechanism involved in the process of emission.  Time correlated single photon counting (TCSPC) measurements from 100 ns to 26000 ns have allowed us to observe a strong non-exponential decay which follows a power law on long time scale. The characteristic exponent of this power law is strongly correlated with the emission energy, causing the life-time of the emission to fall rapidly with increasing of its energies.  The observation that the excitation power has an effect on the life-time shows that other factors such as the growth conditions must be involved in the coupling between life-time and energy.  Using a low power density of a few tens of watts per cm squared, we have shown, in a non perturbative regime, that the shape of the time-integrated spectra and the dynamics of the time-resolved decay curves were consistent with a radiative recombination process centered on In-rich nanocluster. These nanoclusters naturally occur in the embedded InGaN inclusions during the growth by plasma-assisted MBE.     This conclusion is supported by the absence of Quantum confined Stark effect. The success of a charge separation model is perfectly consistent with the emission centered on In-rich nanocluster and the observation of a quasiperfect isotropic emission.
Photoluminescence TCSPC Power law Charge separation Anisotropy