FIELD

The present disclosure relates to a method for manufacturing a semiconductor apparatus.

BACKGROUND

In order to achieve high integration and miniaturization of semiconductor apparatuses, a multi-layer wiring structure in which resin membranes and metal wirings are repeatedly laminated is used. However, the resin membranes increase parasitic capacitance, which causes electric characteristics of the semiconductor apparatuses to deteriorate. In particular, in a semiconductor apparatus including a Y-shaped or T-shaped gate electrode, spaces under the overhangs of a gate electrode are filled with resin, and therefore the parasitic capacitance increases and the gain of high frequency characteristics deteriorates. In contrast, a method for forming a hollow structure around the gate electrode by patterning the resin membrane that covers a semiconductor apparatus, removing the resin membrane around the gate electrode, and applying a resin film to a top surface of the resin membrane is proposed (e.g., see PTL 1). With formation of the hollow structure, the characteristics are greatly improved compared to a case where the gate electrode is buried in the resin membrane.

CITATION LIST

Patent Literature

[PTL 1] JP 2016-39319 A

SUMMARY

Technical Problem

Conventionally, when a resin membrane is patterned, the resin membrane on a dicing line has also been removed. Therefore, the contact area between a resin film and a resin membrane is reduced, and therefore an adhesive force is weakened. Furthermore, the resin film is supported by a support film, and after the resin film is applied to the resin membrane, the support film needs to be removed from the resin film. However, since the adhesive force between the resin film and the support film is stronger than the adhesive force between the resin film and the resin membrane, when the support film is removed from the resin film, floating or peeling of the resin film has sometimes occurred. Furthermore, the applied resin film has sometimes embedded in a hollow part. As a result, there has been a problem that the product yield lowers.

An object of the present invention, which has been made to solve the above-described problem, is to provide a method for manufacturing a semiconductor apparatus capable of improving the product yield.

Solution to Problem

A method for manufacturing a semiconductor apparatus according to the present disclosure includes: forming a semiconductor device including first and second electrodes on a main surface of a semiconductor substrate; forming a resin membrane covering the semiconductor device and a dicing line of the semiconductor substrate on the main surface of the semiconductor substrate; removing the resin membrane around the firs electrode and removing the resin membrane on the second electrode to form a first contact hole without removing the resin membrane on the dicing line; applying a resin film covering above the first and second electrodes and separated from the first and second electrodes to a top surface of the resin membrane to form a hollow structure around the first electrode; patterning the resin film to form a second contact hole connected to the first contact hole and a first opening above the dicing line simultaneously; forming a wiring connected to the second electrode via the first and second contact holes; and after forming the first opening, dicing the semiconductor substrate along the dicing line.

Advantageous Effects of Invention

In the present disclosure, when the photosensitive resin membrane is patterned, the photosensitive resin membrane on the dicing line is not removed. For this reason, the contact area between the photosensitive resin film and the photosensitive resin membrane increases, and therefore the adhesive force improves and it is possible to prevent floating and peeling of the photosensitive resin film. Since the photosensitive resin film is firmly supported by the photosensitive resin membrane, embedding can also be prevented. As a result, the product yield can be improved.

