CROSS-REFERENCE TO RELATED APPLICATION

This application is based upon and claims the benefit of priority from Japanese Patent Application No. 2019-000058, filed on Jan. 4, 2019, the entire contents of which are incorporated herein by reference.

FIELD

Embodiments described herein relate generally to semiconductor devices, inverter circuits, driving devices, vehicles, and elevators.

BACKGROUND

Silicon carbide (SiC) is expected as a material for the next generation of semiconductor devices. The silicon carbide has excellent physical properties such as a band gap of about 3 times, a breakdown field strength of about 10 times, and a thermal conductivity of about 3 times compared to silicon (Si). By utilizing these properties, a semiconductor device capable of being low loss and performing high temperature operation can be realized.

However, for example, in a case of forming a metal oxide semiconductor field effect transistor (MOSFET) by using the silicon carbide, there is a problem in that it is difficult to reduce on-resistance. One factor that reduces the on-resistance is considered to be an interface state present at an interface between a silicon carbide layer and a gate insulating layer.

