BACKGROUND

Multi-layered objects such as various semiconductor objects (e.g. semiconductor wafers, display panels, solar wafers) may include multi-layers of microscopic scale. The dimensions (for example thickness) of the layers and the manner in which one layer is overlaid over another may be of interest.

There is a growing need to provide systems, non-transitory computer readable media and methods for evaluating multi-layered objects.

SUMMARY

There may be provided a method for milling a multi-layered object. The method may include (i) receiving or determining milling parameters related to a milling process, the milling parameters may include at least two out of (a) a defocus strength, (b) a duration of the milling process, (c) a bias voltage supplied to an objective lens during the milling process, (d) an ion beam energy, and (e) an ion beam current density, and (ii) forming a crater by applying the milling process while maintaining the milling parameters, wherein the applying of the milling process may include directing a defocused ion beam onto the multi-layered object.

There may be provided a non-transitory computer readable medium that stores instructions for: (i) receiving or determining milling parameters related to a milling process; wherein the milling parameters may include at least two out of (a) a defocus strength, (b) a duration of the milling process, (c) a bias voltage supplied to an objective lens during the milling process, (d) an ion beam energy, and (e) an ion beam current density; and (ii) forming a crater by applying the milling process while maintaining the milling parameters, wherein the applying of the milling process may include directing a defocused ion beam onto a multi-layered object.

There may be provided a miller that may include a controller and a focused ion beam column. The controller may be configured to receive or determine milling parameters related to a milling process. The milling parameters may include at least two out of (a) a defocus strength, (b) a duration of the milling process, (c) a bias voltage supplied to an objective lens during the milling process, (d) an ion beam energy, and (e) an ion beam current density. The focused ion beam column may be configured to form a crater by applying the milling process while maintaining the milling parameters. The applying of the milling process may include directing a defocused ion beam onto the multi-layered object.

