TECHNICAL FIELD

Embodiments of the disclosure relate to activating input/output lines of a memory device. More specifically, various embodiments relate to activating a number of main input/output lines of a memory device via a number of control signals, and to related methods, devices, and systems.

BACKGROUND

Memory devices are typically provided as internal, semiconductor, integrated circuits in computers or other electronic systems. There are many different types of memory including, for example, random-access memory (RAM), read only memory (ROM), dynamic random access memory (DRAM), synchronous dynamic random access memory (SDRAM), resistive random access memory (RRAM), double data rate memory (DDR), low power double data rate memory (LPDDR), phase change memory (PCM), and Flash memory.

Memory devices typically include many memory cells, arranged in a memory array, and capable of holding a charge that is representative of a bit of data. Data may be written to or retrieved from a memory cell via input/output lines, such a local input/output lines (LIO) and main input/output (MIO) lines.

