TECHNICAL FIELD

The present disclosure relates generally to methods of depositing thin films. In particular, the disclosure relates to processes for the deposition of films by spatial ALD with in-situ annealing.

BACKGROUND

In microelectronics device fabrication, there is a need to fill narrow trenches (ARs>10:1) with no voiding for many applications. One such application is shallow trench isolation (STI). In STI, the film needs to be of high quality throughout the trench (i.e., having a wet etch rate ratio less than about 2) with very low leakage.

One of possible solutions is Spatial Atomic Layer Deposition (ALD). Spatial ALD uses a sequence of atomic layer deposition and plasma etch which enables void free fill in trenches at reasonable productivity. Both thermal ALD and plasma enhanced (PE) ALD can be used to provide conformal void free deposition. However, although thermal ALD has uniform film quality in structure, average film quality is relatively poor that requires additional post processes such as steam anneal and UV-cures. On the other hand, PEALD can provide good film quality especially on the top part of surface feature but not throughout the filled trenches due to nature of plasma distribution. Thus, also requiring post processes. The additional post treatment processes add extra cost to overall device processes.

Therefore, there is a need in the art for processes to gap fill semiconductor features with defect free film.

SUMMARY

One or more embodiments of the disclosure are directed to processing methods comprising exposing a substrate surface having at least one feature thereon to a deposition environment to deposit a film. The substrate surface is exposed to an anneal environment to improve a property of the film.

Additional embodiments of the disclosure are directed to processing methods comprising positioning a substrate surface in a processing chamber. The substrate surface has at least one feature thereon. The at least one feature creates a gap with a bottom, top and sidewalls. The substrate surface is exposed to a deposition environment comprising at least one cycle of a silicon precursor and an oxygen containing reactant to form a silicon oxide film on the at least one feature. The substrate surface is exposed to an anneal environment to improve a wet etch rate ratio of the silicon oxide film. Exposure to the deposition environment and, optionally, the anneal environment, is repeated to fill the gap of the feature.

Further embodiments of the disclosure are directed to processing method comprising placing a substrate having a substrate surface with a feature into a processing chamber. The processing chamber comprises a plurality of process regions with each process region separated from adjacent process regions by a gas curtain. At least a portion of the substrate surface is exposed to a first process condition in a first process region of the processing chamber. The first process condition comprises a silicon precursor. The substrate surface is laterally moved through a gas curtain to a second process region of the processing chamber. The substrate surface is exposed to a second process condition in the second process region of the processing chamber. The second process condition comprises an oxygen-containing reactant to form a silicon oxide film. The substrate surface is laterally moved through a gas curtain to a third process region of the processing chamber. The substrate surface is exposed to a third process condition in the third process region of the processing chamber. The third process condition comprises an anneal environment. Exposure to the first process condition and the second process condition is repeated to fill the feature.

