CROSS-REFERENCE TO RELATED APPLICATION(S)

This application is based upon and claims the benefit of priority from Japanese Patent Application No. 2017-059162, filed on Mar. 24, 2017, the entire contents of which are incorporated herein by reference.

TECHNICAL FIELD

The present disclosure relates to a substrate processing apparatus, a method of manufacturing a semiconductor device, and a recording medium.

BACKGROUND

As an example of processes of manufacturing a semiconductor device, a process of supplying a precursor and a reactant to a plurality of substrates and forming films on these substrates may be performed in some cases.

SUMMARY

Some embodiments of the present disclosure provide a technique capable of, when forming films on a plurality of substrates, improving the substrate-to-substrate film thickness uniformity of the films formed on the substrates.

According to one embodiment of the present disclosure, there is provided a technique that includes a process chamber in which a process is performed to a substrate, the process including forming a film containing a main element, a first nozzle configured to supply a precursor containing the main element to the substrate in the process chamber, and a second nozzle configured to supply a reactant to the substrate in the process chamber. The first nozzle includes a first ceiling hole provided at a ceiling portion of the first nozzle and opened in a vertical direction, and a plurality of first side holes provided at a side portion of the first nozzle and opened in a horizontal direction. An opening area of the first ceiling hole is larger than an opening area of each of the plurality of first side holes.

