CROSS-REFERENCE TO RELATED APPLICATION

This application is a national stage application under 35 U.S.C. § 371 of PCT International Application Serial No. PCT/US2017/053347, filed on Sep. 26, 2017 and entitled “HIGH ASPECT RATIO NON-PLANAR CAPACITORS FORMED VIA CAVITY FILL,” which is hereby incorporated by reference herein in its entirety.

TECHNICAL FIELD

This disclosure relates generally to the field of semiconductor devices, and more specifically, to non-planar capacitors for electronic device components, as well as methods for forming such capacitors.

BACKGROUND

High-breakdown capacitors are of great importance in various modern technologies, such as e.g. memories and radio frequency (RF) power amplifiers. The name “high-breakdown” arises from the fact that such capacitors have an enhanced breakdown voltage, i.e. voltage at which electrical current starts flowing through capacitor's insulator layer that separates the two capacitor's electrodes, an undesirable phenomenon that can cause failure of electronic devices which include such capacitors.

Capacitors implementing non-planar architectures, e.g. cylindrical capacitors, and high aspect ratio (AR) openings (i.e. ratios of a height of an opening to a width of an opening) are particularly suitable for realizing the high-breakdown requirement. However, fabricating such capacitors remains a challenge because conventional fabrication approaches rely on dry etch to form large capacitors with high AR openings, which is not easy to do. Hence, improvements in this respect would be desirable.

