BACKGROUND

Field

Embodiments described herein generally relate to the field of semiconductor device manufacturing, and in particular, to methods and apparatus used remove adhesive residues from a surface of a lithography mask.

Description of the Related Art

Semiconductor device manufacturing typically includes forming a plurality of interconnected patterned material layers on, over, and in the surface of a workpiece, e.g., a silicon wafer. Each of the patterned material layers are formed using a series of manufacturing processes which include patterning the workpiece surface or previously deposited material layers disposed on the workpiece surface. Often, the workpiece surface or the previously deposited material layers disposed on the workpiece surface are patterned using a lithography process. A typical lithography process includes transferring a pattern formed on the surface of a lithography mask to a resist layer coating the workpiece surface or the coating previously deposited material layers disposed thereon.

A lithography mask assembly, used in a lithography process, typically includes the lithography mask and a protective pellicle disposed over the patterned surface thereof. The pellicle includes a thin transparent membrane, i.e., a pellicle membrane which extends over the patterned surface of the lithography mask when the pellicle is secured thereto. The pellicle membrane is typically mounted on a pellicle frame which is secured to the patterned surface of the lithography mask by an adhesive, such as an epoxy resin. The pellicle membrane protects the patterned surface of the lithography mask from being contacted and thereby scratched during handling, and from exposure to environmental contaminants, such as dust. Typically, the pellicle membrane is spaced apart from the surface of the lithography mask by the pellicle frame so that any particles, e.g., dust, which become collected thereon are not in a field of focus when the lithography mask pattern is transferred to the resist layer on the substrate.

Pellicles desirably extend the useful lifetime of a lithography mask and are commonly replaced during cleaning or refurbishment processes related thereto. Typically, the used pellicle is separated from a lithography mask and discarded prior to cleaning or refurbishment of the lithography mask. Residues from the adhesive used to secure the used pellicle frame to the lithography mask surface are often removed before subsequent cleaning of the patterned surface of the mask to prevent undesirable transfer of the adhesive residue thereto. Unfortunately, the relatively low volatility adhesives suitable for use with for the next generation of vacuum extreme ultra violet (EUV) lithography systems, have proven difficult to remove from EUV lithography mask surfaces without causing damage thereunto.

Accordingly, there is a need in the art for improved systems and methods for removing adhesive from the surface of a lithography mask.

SUMMARY

Embodiments of the present disclosure generally include apparatus and methods for removing adhesive residues from a surface of a lithography mask prior to cleaning or refurbishment of the lithography mask. In particular, the processing systems described herein provide for the delivery of a solvent to selective locations on the surface of the lithography mask to facilitate the removal of adhesive residue therefrom.

In one embodiment, a method of processing a substrate includes positioning the substrate on a substrate support of a processing system, sealing individual ones of a plurality of cleaning units to a surface of the substrate at a corresponding plurality of locations, heating a cleaning fluid to a temperature between about 50° C. and about 150° C., flowing the cleaning fluid to, and thereafter, from, the plurality of cleaning units, and exposing the surface of the substrate to the cleaning fluid at the plurality of locations.

In another embodiment, a computer readable medium has instructions stored thereon for a method of processing a substrate. The method includes positioning the substrate on a substrate support of a processing system, sealing individual ones of a plurality of cleaning units to a surface of the substrate at a corresponding plurality of locations, heating a cleaning fluid to a temperature between about 50° C. and about 150° C., flowing the cleaning fluid to, and thereafter, from, the plurality of cleaning units, and exposing the surface of the substrate to the cleaning fluid at the plurality of locations.

In another embodiment, a processing system includes a substrate support disposed in a processing volume and a fluid distribution assembly facing a substrate receiving surface of the substrate support. The fluid distribution assembly includes a support shaft having an inlet and an outlet, a manifold coupled to the support shaft, and a plurality of cleaning units coupled to the manifold. Here, individual ones of the cleaning units become sealed to a to-be-processed substrate when the substrate support and the fluid distribution assembly are disposed in a substrate processing mode.

