The present application is based on, and claims priority from JP Application Serial Number 2020-013343, filed Jan. 30, 2020, the disclosure of which is hereby incorporated by reference herein in its entirety.

BACKGROUND

1. Technical Field

The present disclosure relates to an electro-optical device including a transistor in which a gate electrode is provided on the opposite side from a scanning line with respect to a semiconductor layer, and an electronic apparatus.

2. Related Art

An electro-optical device (a liquid crystal device) used as a light valve or the like of a projection-type display apparatus is provided with a semiconductor layer between a substrate main body and a pixel electrode, and a transistor is configured using the semiconductor layer. In such an electro-optical device, when light from a light source is incident on an LDD region, which is interposed between a pixel electrode-side source drain region electrically coupled to a pixel electrode side of the semiconductor layer, and a channel region, this causes an optical leakage current to be generated in the transistor. Thus, a structure is conceivable in which a semiconductor layer extending along a scanning line is provided so as to overlap with the scanning line, a gate electrode is provided on the opposite side from the scanning line with respect to the semiconductor layer, and the gate electrode and the scanning line are electrically coupled via an opening provided in both sides of the semiconductor layer (seeFIG. 2Band the like of WO 2017/086116). According to such a structure, incidence of light on the LDD region can be suppressed by the gate electrode provided inside the opening.

However, in order to electrically couple the gate electrode with the scanning line via the opening provided in both sides of the semiconductor layer, and also to suppress the incidence of light on the semiconductor layer using the gate electrode provided inside the opening, it is necessary to form the scanning line such that the width of the scanning line overlaps with the opening provided in both sides of the semiconductor layer. Therefore, when light shielding is performed by the gate electrode inside the opening provided in both sides of the semiconductor layer, the width of the scanning line needs to be widened, and thus, a problem arises in that a reduction in a pixel aperture ratio cannot be avoided.

SUMMARY

In order to solve the problem describes above, an electro-optical device according to an aspect of the present disclosure includes a scanning line; a transistor including a semiconductor layer extending in an overlapping manner with the scanning line in plan view and a gate electrode having light shielding properties and disposed on a side, opposite from the scanning line, of the semiconductor layer, and an interlayer insulating layer in a layer between the transistor and the scanning line, the interlayer insulating layer including a first opening and a second opening provided with the semiconductor layer interposed therebetween in plan view, a portion of the gate electrode being provided inside each of the first opening and the second opening. The first opening is provided at a position overlapping with the scanning line in plan view, and the second opening is provided at a position not overlapping with the scanning line in plan view.

The electro-optical device according to the present disclosure is used for various electronic apparatuses. According to an aspect of the present disclosure, when the electronic apparatus is a projection-type display apparatus, the projection-type display apparatus is provided with a light source unit that emits a light to be supplied to the electro-optical device, and a projection optical system that projects the light modulated by the electro-optical device.

