TECHNICAL FIELD

The present disclosure relates generally to apparatus and methods for measuring and monitoring pedestal temperature. In particular, embodiments of the disclosure are directed to wafers for thermal profile monitoring and methods of monitoring the thermal profile of a processing chamber.

BACKGROUND

Currently, TC wafers are used to measure the temperature of a pedestal in a processing chamber. The process of measuring temperature can be time consuming, resulting in long lead times to open the chamber, pump-down the chamber to processing conditions and perform the temperature measurements. As throughput demands increase, the delay caused by the temperature monitoring process becomes a larger issue.

There is a need for apparatus and methods for the determination of pedestal temperatures that have a reduced delay in processing.

SUMMARY

One or more embodiments of the disclosure are directed to thermal monitors comprising a substrate, a wireless communication controller and a battery. The substrate has a top surface and a bottom surface. At least one camera is positioned on the bottom surface of the substrate. The at least one camera has a field of view. The battery is connected to the at least one camera and the wireless communication controller. The thermal monitor has a total thickness sufficient to pass through a slit valve of a processing chamber.

Additional embodiments of the disclosure are directed to thermal monitors comprising a substrate, a plurality of high resolution thermal imaging cameras, a wireless communication controller, a battery and a microcontroller. The substrate has a top surface and a bottom surface. The plurality of high resolution thermal imaging cameras is positioned at least on the bottom surface of the substrate. Each of the high resolution thermal imaging cameras produces a color gradient image representative of temperature variations. Each of the high resolution thermal imaging cameras has a field of view and the fields of view of the high resolution thermal imaging cameras overlap to provide a complete image. The wireless communication controller is configured to communicate through one or more of a wi-fi or Bluetooth standard. The battery is connected to the plurality of high resolution thermal imaging cameras and the wireless communication controller. The microcontroller is connected to the wireless communication controller, the camera and the battery. The microcontroller is configured to process data received from the plurality of high resolution thermal imaging cameras and transmits the processed data through the wireless communication controller. The thermal monitor has a total thickness sufficient to pass through a slit valve of a processing chamber. The plurality of cameras, battery and wireless communication controller are operable at temperatures in the range of about 100° C. to about 500° C.

Further embodiments of the disclosure are directed to methods of monitoring temperature of a wafer support in a processing chamber. The method comprises positioning a thermal monitor on a plurality of lift pins. The thermal monitor has a substrate with at least one camera, a wireless communication controller and a battery. The at least one camera is positioned on a bottom surface of the substrate and has a field of view. The battery is connected to the at least one camera and the wireless communication controller. The plurality of lift pins support the thermal monitor so that there is a gap between the wafer support and the bottom surface of the thermal monitor. The temperature of the wafer support is measured using the at least one camera on the thermal monitor.

