TECHNICAL FIELD

The present disclosure relates to a solid-state imaging device and an imaging device.

BACKGROUND ART

A conventional imaging device or the like includes a synchronous type solid-state imaging device which captures image data (frame) in synchronization with a synchronized signal such as a vertical synchronized signal. This typical synchronous type solid-state imaging device is allowed to acquire image data only once in each cycle (e.g., 1/60 seconds) of the synchronized signal. In this case, a demand for higher speed processing in such fields associated with traffics, robots, or the like is difficult to meet. Accordingly, there has been proposed a non-synchronous type solid-state imaging device which includes a detection circuit provided for each pixel to detect an excess of a received light amount over a threshold as an address event, on a real time basis. The non-synchronous type solid-state imaging device which detects an address event for each pixel is also called a DVS (Dynamic Vision Sensor).

CITATION LIST

Patent Literature

[PTL 1]

JP-T-2016-533140

SUMMARY

Technical Problem

However, a typical DVS is configured such that a photoelectric conversion element for generating a charge corresponding to a received light amount and a circuit (hereinafter referred to as a pixel circuit) for detecting the presence or absence of address event firing on the basis of a change in a current value of a photocurrent produced by the charge generated in the photoelectric conversion element are integrated on an identical substrate. In this case, a dark current from the photoelectric conversion element flows into a transistor constituting the pixel circuit, and causes a problem of deterioration of noise characteristics of the DVS.

The present disclosure therefore proposes a solid-state imaging device and an imaging device capable of improving noise characteristics.

Solution to Problem

For solving the above-mentioned problems, a solid-state imaging device according to one aspect of the present disclosure includes a plurality of photoelectric conversion elements arranged in a two-dimensional grid shape in a matrix direction and each generating a charge corresponding to a received light amount, and a detection unit that detects a photocurrent produced by the charge generated in each of the plurality of photoelectric conversion elements. A chip on which the photoelectric conversion elements are disposed and a chip on which at least a part of the detection unit is disposed are different from each other.

