CROSS-REFERENCE TO THE RELATED APPLICATIONS

This application claims priority from Korean Patent Application No. 10-2018-0169699, filed on Dec. 26, 2018, the disclosure of which is incorporated herein by reference in its entirety.

BACKGROUND

Exemplary embodiments of the inventive concept relate to an aluminum compound, a method for manufacturing a semiconductor device using the same, and a deposition process using the same.

Due to advances in electronic technology, recently, down-scaling of a semiconductor device is rapidly accelerating. Accordingly, the structure of patterns constituting a semiconductor device is being complicated and miniaturized. According to this, the development of a raw material compound which is capable of forming a thin film with a uniform thickness in a complicated and minute three-dimensional structure by securing thermal stability during forming a thin film including aluminum is required.

SUMMARY

An exemplary embodiment of the inventive concept provides a deposition precursor having thermal stability and transportation availability.

An exemplary embodiment of the inventive concept provides a method for manufacturing a semiconductor device including forming a thin film with a thin thickness and improved properties.

Exemplary embodiments of the inventive concept provide an aluminum compound and a method for manufacturing a semiconductor device using the same. The aluminum compound according to an aspect of the inventive concept may be represented by Formula 1.



The method for manufacturing a semiconductor device according an aspect of to the inventive concept comprises preparing a deposition precursor including an aluminum compound; and forming a thin film using the deposition precursor, wherein the aluminum compound may be represented by Formula 1.



