TECHNICAL FIELD

The present application relates to the field of display technique, particularly to a display panel and method of manufacturing thereof.

BACKGROUND

The statement here merely provides background information relative to the present application, but not necessarily constitutes the prior art.

Displays known by the inventor are generally controlled by active switches. The displays are widely used for having a variety of advantages such as thin, power saving and radiation-free and are mainly included of liquid crystal displays, Organic Light-Emitting Diode (OLED) displays, Quantum Dot Light Emitting Diode (QLED) displays, plasma displays, etc. In terms of apparent structures, both flat type and curved type of displays are included.

With the liquid crystal displays, a liquid crystal panel and a backlight module are included. The principle of operation for the liquid crystal displays is to dispose liquid crystal molecules between two parallel glass substrates and apply a driving voltage to the two glass substrates so as to control a rotation direction of the liquid crystal molecules, thereby refracting lights from a backlight module for producing a screen.

With the OLED displays, an organic light emitting diode is configured to emit lights for displaying. The OLED displays have advantages such as self-luminescence, wide angle of view, almost infinitely high contrast, lower power consumption and high-speed response. In comparison with organic fluorescence luminophors, light emission based on quantum dot has advantages such as high color purity, long lifetime and easy dispersion and may be manufactured by a printing process. Thus, QLED is commonly considered as a strong contender for the next generation of display technique. Current OLEDs are low in composite efficiency and short in lifetime.

SUMMARY

The present application is to provide a display panel so as to improve the performance of a transistor.

The object of the present application is achieved by the following technical solutions.

According to one aspect of the present application, the present application discloses a display panel, including:a substrate;an active switch formed on the substrate;a color photoresist layer formed on the active switch;a first electrode layer formed on the color photoresist layer;a light emitting diode formed on the first electrode layer;a second electrode layer formed on the light emitting diode;an encapsulation layer formed on the second electrode layer;a driver circuit electrically connected with the first and second electrode layers;the light emitting diode includes a red light emitting layer, a green light emitting layer and a blue light emitting layer, each of which includes a silicon-germanium quantum dot material;a proportion of silicon in the red light emitting layer ranges from 10%-35% and that of germanium ranges from 65%-90%; the proportion of silicon in the green light emitting layer ranges from 45%-65% and that of germanium ranges from 35%-50%; the proportion of silicon in the blue light emitting layer ranges from 65%-95% and that of germanium ranges from 5%-35%.

According to another aspect of the present application, the present application also discloses a method of manufacturing a display panel, including:forming an active switch on a substrate;forming a color photoresist layer on the active switch;forming a first electrode layer on the color photoresist layer;forming a light emitting diode on the first electrode layer;forming a second electrode layer on the light emitting diode;forming an encapsulation layer on the second electrode layer;disposing a driver circuit in electrical connection with the first and second electrode layers;the light emitting diode includes a red light emitting layer, a green light emitting layer and a blue light emitting layer, each of which includes a silicon-germanium quantum dot material.

According to another aspect of the present application, the present application also discloses a display device including a display panel, the display panel including:a substrate;an active switch formed on the substrate;a color photoresist layer formed on the active switch;a first electrode layer formed on the color photoresist layer;a light emitting diode formed on the first electrode layer;a second electrode layer formed on the light emitting diode;an encapsulation layer formed on the second electrode layer;a driver circuit electrically connected with the first and second electrode layers;the light emitting diode includes a red light emitting layer, a green light emitting layer and a blue light emitting layer, each of which includes a silicon-germanium quantum dot material;a proportion of silicon in the red light emitting layer ranges from 10%-35% and that of germanium ranges from 65%-90%; the proportion of silicon in the green light emitting layer ranges from 45%-65% and that of germanium ranges from 35%-50%; the proportion of silicon in the blue light emitting layer ranges from 65%-95% and that of germanium ranges from 5%-35%.Optionally, the step of forming the light emitting diode on the first electrode layer includes a method of manufacturing the blue light emitting layer:forming a plastic cluster;forming rods with the plastic clusters;arranging the rods in a hexagon form so as to form a hexagonal matrix;forming an intermediate template set with the hexagonal matrices according to a self-assembling mechanism of organic molecular template;roasting the intermediate template set to remove the template so as to form a silica frame;filling the silica frame with the silicon-germanium quantum dot material.

In a technique for self-assembling molecular template via silica frames of the present application, mesoporous silica has a specific pore structure, which is hollow, low in density and large in specific surface area. Thus, the mesoporous silica has unique penetrability, molecule sieving ability, optical performance and adsorption and can improve the property of the blue light emitting layer. Furthermore, due to high electron mobility, the germanium material can improve the light emission efficiency of three-series QLED. Therefore, the electrical conductivity of the backlight source of the three-series QLED is effectively improved, thereby improving the composite performance of the three-series QLED and extending the lifetime thereof.

