BACKGROUND

In the fields of wireless communication and power management, various components can be implemented using solid-state devices. For example, in radio frequency (RF) communication, the RF front-end is a generic term for the circuitry between an antenna and a digital baseband system. Such RF front-end components may include one or more diodes in conjunction with one or more transistors, such as one or more field-effect transistors (FETs). Due, in part, to their large bandgap and high mobility, gallium nitride (GaN) and other group III-Nitride (III-N) materials are suitable for integrated circuit applications needing high-frequency and/or high-power FETs. However, transistor functionality may be susceptible to resistive elements in the transistor structure. For example, resistance between metallization structures and source or drain regions of transistors may impair flow of current from transistor to other circuit elements connected with the transistor. Reducing such resistance is important as transistors are scaled in physical dimensions.

