CROSS-REFERENCE TO RELATED APPLICATIONS

The present application claims priority under 35 U.S.C. § 119(a) to Korean Application No. 10-2021-0017100, filed on Feb. 5, 2021 in the Korean Intellectual Property Office, which is incorporated herein by reference in its entirety.

BACKGROUND

1. Technical Field

The present disclosure generally relates to a programming method for a nonvolatile memory device.

2. Related Art

Various processes and operations may be applied to methods of writing signal information in a nonvolatile memory device according to a configuration of the nonvolatile memory device. In a case of a flash memory device, which is an example of a nonvolatile memory device, methods related to writing signal information may include a program operation of storing electrons in a charge storage layer of a memory cell and an erase operation that erases electrons from the charge storage layer. The program operation and the erase operation may be performed by applying a program voltage and an erase voltage to a gate electrode of the memory cell, respectively, to change the electron density in the charge storage layer.

Nonvolatile memory devices may be resistance-change memory devices that include a reversible resistance device. In a resistance change memory device with reversible resistance, a write operation of signal information may be performed by changing the electrical resistance of the reversible resistance device inside the memory cell. The signal information write operation of the resistance-change memory device may be differentiated from program operations or erase operations of flash memory devices in which electrons are filled in or erased from the charge storage layer. Recently, with increasing industry interest in the use of the resistance change memory devices, various methods for effectively writing signal information in a plurality of memory cells of resistance-change memory devices have been studied.

SUMMARY

A method of programming a nonvolatile memory device according to an embodiment of the present disclosure is provided. In the programming method, a memory device including a plurality of memory cells may be provided. Each of the plurality of memory cells may include a reversible resistance device. A target memory cell may be selected from among the plurality of memory cells. A target resistance state for the reversible resistance device of the target memory cell may be determined. A resistance state of the reversible resistance device of the target memory cell may be read. The read resistance state may be compared with the target resistance state. One of a positive program operation and a negative program operation may be performed for the reversible resistance device of the target memory cell when the read resistance state may be different from the target resistance state. The positive program may include applying a program voltage having a positive polarity to the reversible resistance device of the target memory cell, and the negative program may include applying a program voltage having a negative polarity to the reversible resistance device of the target memory cell.

A method of programming a nonvolatile memory device according to another embodiment of the present disclosure is provided. In the programming method, a memory element including a plurality of memory cells connected in series along a channel layer extending in a direction perpendicular to an upper surface of a substrate may be provided. Each of the plurality of memory cells may include a reversible resistance memory layer and a gate electrode layer that are disposed adjacent to side surfaces of the channel layer. A target memory cell may be selected from among the plurality of memory cells and a target resistance state for the reversible resistance memory layer of the target memory cell may be determined. A resistance state may be read by measuring an operation current flowing through the reversible resistance memory layer of the target memory cell. The read resistance state may be compared with the target resistance state. One of a positive program operation and a negative program operation for the reversible resistance memory layer of the target memory cell may be performed to change the resistance state of the reversible memory layer when the read resistance state is different from the target resistance state.

