CROSS-REFERENCE TO RELATED APPLICATION

This U.S. non-provisional patent application claims priority under 35 U.S.C. § 119 to Korean Patent Application No. 10-2020-0033989, filed on Mar. 19, 2020, in the Korean Intellectual Property Office, the disclosure of which is hereby incorporated by reference in its entirety.

BACKGROUND

Embodiments of the inventive concepts relate to a semiconductor module and, more particularly, to a semiconductor module including a heat dissipation layer.

An integrated circuit chip may be realized in the form of a semiconductor package so as to be appropriately applied to an electronic product. In a typical semiconductor package, a semiconductor chip may be mounted on a printed circuit board (PCB) and may be electrically connected to the PCB through bonding wires or bumps. As working speeds and capacities of semiconductor packages have been increased, power consumption of the semiconductor packages has also been increased. Thus, thermal characteristics of a semiconductor module including a plurality of semiconductor packages may become important.

SUMMARY

Embodiments of the inventive concepts may provide a semiconductor module with improved durability.

Embodiments of the inventive concepts may also provide a semiconductor module with improved heat dissipation characteristics.

In an aspect, a semiconductor module may include a substrate including a first region and a second region, a first chip mounted in the first region, a second chip and passive devices mounted in the second region, and a heat dissipation layer being in contact with a top surface of the first chip. The heat dissipation layer may be provided on top surfaces and side surfaces of the first chip, the second chip and the passive devices.

In an aspect, a semiconductor module may include a substrate including a first region and a second region, a first chip mounted in the first region, a heat dissipation layer covering the top surface of the first chip, and a second chip and passive devices mounted in the second region. Side surfaces of the heat dissipation layer may be vertically aligned with side surfaces of the first chip, respectively. The heat dissipation layer may include a plurality of particles, and the particles may include silicon carbide (SiC).

In an aspect, a semiconductor module may include a substrate including a first region, a second region, and a third region, the first region laterally disposed between the second region and the third region, a first chip mounted in the third region, a second chip and passive devices mounted in the second region, an electromagnetic blocking wall provided in a region between the first region and the second region of the substrate, first connection parts electrically connecting the first chip to the substrate, second connection parts electrically connecting the second chip to the substrate, third connection parts electrically connecting the passive devices to the substrate, underfills covering the first to third connection parts, a dielectric layer conformally covering top surfaces and side surfaces of the second chip and the passive devices, and a heat dissipation layer covering the dielectric layer, the first chip, and the electromagnetic blocking wall.

