BACKGROUND

A one-time programmable (OTP) memory is a type of non-volatile memory in which the data bits can be programmed only once (e.g., from a default logic zero to a logic one only once, or from a default logic one to a logic zero only once). An OTP memory can be implemented, for example, by incorporating an electronic fuse (e-fuse) (e.g., made of polysilicon or metal) into each memory cell. A data bit is programmed by applying a high voltage to the memory cell. The high voltage causes electromigration of the e-fuse material to open or blow out the connection. An OTP memory can also be implemented, for example, by incorporating an anti-fuse (e.g., thin layer of oxide) into the memory cell. Similar to e-fuse implementations, programming is achieved by applying a high voltage to the memory cell. The high voltage causes the thin oxide to breakdown to establish an electrical connection through the oxide layer.

