CROSS-REFERENCE TO THE RELATED APPLICATION

This application claims priority from Korean Patent Application No. 10-2019-0089220, filed on Jul. 23, 2019 in the Korean Intellectual Property Office, the disclosure of which is incorporated herein by reference in its entirety.

BACKGROUND

Methods and apparatuses consistent with embodiments of the present application relate to a wafer processing apparatus and a wafer processing method using the same.

Various processes, such as oxidation, photolithography, etching, thin-film deposition, metallization, electrical die sorting (EDS), packaging, etc., are performed on a wafer in order to manufacture semiconductor devices. As the semiconductor devices are miniaturized, high precision control of conditions of the semiconductor processes is increasingly required. In particular, in order to improve the yield rate of the semiconductor manufacturing processes, it is essential to identify warpage of a wafer in each of the processes, determine the degree of warpage, and realize uniform processing conditions to minimize the warpage of the wafer.

SUMMARY

One or more embodiments provide a wafer processing apparatus for uniformly controlling a temperature of the entire wafer and a wafer processing method using the wafer processing apparatus.

Embodiments are not limited to the objectives described above and other objectives which are not mentioned may be clearly understood by one of ordinary skill in the art from the descriptions below.

According to an aspect of an embodiment, there is provided a wafer processing apparatus including: a heating plate through which a plurality of vacuum ports is formed, and a central region and an edge region surrounding the central region are defined; a plurality of temperature sensors equipped in the heating plate; a heating device configured to heat the heating plate; a first power supply and a second power supply configured to provide operational power to different portions of the heating device; a first temperature controller configured to generate a first feedback temperature control signal for controlling power output of the first power supply based on a first measurement value generated by the plurality of temperature sensors; a second temperature controller configured to generate a second feedback temperature control signal for controlling power output of the second power supply based on a second measurement value generated by the plurality of temperature sensors; an electronic pressure regulator configured to provide vacuum pressure for fixing a wafer disposed on the heating plate to the plurality of vacuum ports and regulate pressure of the plurality of vacuum ports; and a wafer chucking controller configured to control the electronic pressure regulator, and generate a feedback pressure control signal for controlling the pressure of the electronic pressure regulator based on the first feedback temperature control signal and the second feedback temperature control signal.

According to an aspect of an embodiment, there is provided a wafer processing apparatus including: a heating plate through which a plurality of vacuum ports is formed, and a central region, an edge region surrounding the central region, and a middle region between the central region and the edge region are defined; a plurality of temperature sensors configured to measure a temperature of the heating plate; a heating device configured to heat the heating plate; a first power supply, a second power supply and a third power supply configured to provide operational power to the heating device; a first temperature controller configured to generate a first feedback temperature control signal for controlling a first power output of the first power supply based on a first measurement value of the plurality of temperature sensors; a second temperature controller configured to generate a second feedback temperature control signal for controlling a second power output of the second power supply based on a second measurement value of the plurality of temperature sensors; a third temperature controller configured to generate a third feedback temperature control signal for controlling a third power output of the third power supply based on a third measurement value of the plurality of temperature sensors; an electronic pressure regulator configured to regulate pressure of the plurality of vacuum ports; and a wafer chucking controller configured to control the electronic pressure regulator. The plurality of vacuum ports includes: a plurality of first vacuum ports arranged in circular symmetry with respect to the center of the heating plate; and a plurality of second vacuum ports arranged in circular symmetry with respect to the center of the heating plate and farther from the central region of the heating plate than the plurality of first vacuum ports. The electronic pressure regulator includes: a first electronic pressure regulator configured to regulate pressure of the plurality of first vacuum ports; and a second electronic pressure regulator configured to regulate pressure of the plurality of second vacuum ports. The wafer chucking controller is further configured to generate a first feedback pressure control signal and a second feedback pressure control signal configured to control, respectively, pressure of the first electronic pressure regulator and the second electronic pressure regulator based on the first feedback temperature control signal, the second feedback temperature control signal and the third feedback temperature control signal.

According to an aspect of an embodiment, there is provided a wafer processing apparatus including: a heating plate through which a plurality of vacuum ports is formed, and a central region and an edge region surrounding the central region are defined; a plurality of temperature sensors configured to measure a temperature of the heating plate; a heating device configured to heat the heating plate; a first power supply and a second power supply configured to provide operational power to the heating device; a first measuring device and a second measuring device configured to measure a first power output of the first power supply and a second power output of the second power supply, respectively; a first temperature controller and a second temperature controller configured to generate a first feedback temperature control signal and a second feedback temperature control signal configured to control the first power output and the second power output based on measurement values of the plurality of temperature sensors; an electronic pressure regulator configured to regulate pressure of the plurality of vacuum ports; and a wafer chucking controller configured to control pressure of the electronic pressure regulator, and generate a feedback pressure control signal for controlling the pressure of the electronic pressure regulator based on the first power output and the second power output.

According to an aspect of an embodiment, there is provided a wafer processing method including: heating a heating plate, wherein a plurality of vacuum ports are formed through the heating plate and vacuum pressure is applied to the plurality of vacuum ports; loading a wafer on the heating plate; controlling a heating device to heat the heating plate to a pre-set temperature and substantially maintain the heating plate at the pre-set temperature in correspondence to a temperature change of the heating plate due to the wafer being loaded on the heating plate; identifying warpage of the wafer based on power outputs of the heating device; and regulating the vacuum pressure in the plurality of vacuum ports based on the warpage of the wafer.

