CROSS-REFERENCE TO RELATED APPLICATION

This application claims the benefit of Korean Patent Application No. 10-2019-0131392, filed on Oct. 22, 2019, in the Korean Intellectual Property Office, the disclosure of which is incorporated herein in its entirety by reference.

BACKGROUND

The inventive concepts relate to a pellicle, and more particularly to a pellicle for a reflective mask.

As a degree of integration of semiconductor devices increases, exposure apparatuses which use, as a light source, extreme ultra violet (EUV) light having a shorter wavelength than deep ultra violet (DUV) light have been actively developed to improve resolution. The EUV exposure apparatus may use a reflective mask that uses a reflective property of the EUV light.

The reflective mask may be contaminated by particles when performing an exposure process by using an EUV exposure apparatus. Accordingly, a pellicle for a reflective mask on the reflective mask capable of protecting the reflective mask may be desirable.

SUMMARY

The inventive concepts provide a pellicle for a reflective mask capable of protecting the reflective mask.

According to an aspect of the inventive concepts, there is provided a pellicle for a reflective mask, the pellicle including: a pellicle body; a pellicle frame to support the pellicle body; and a pattern structure in at least a part of a surface of the pellicle body, wherein the pattern structure includes a plurality of patterns.

According to another aspect of the inventive concepts, there is provided a pellicle for a reflective mask, the pellicle including: a pellicle body; a pellicle frame to support the pellicle body; and a first pattern structure and a second pattern structure spaced apart from each other on a surface of the pellicle body. The first pattern structure includes a plurality of first patterns spaced apart from each other, and the second pattern structure includes a plurality of second patterns spaced apart from each other.

According to another aspect of the inventive concepts, there is provided a pellicle for a reflective mask, the pellicle including: a pellicle body; a pellicle frame at a periphery of the pellicle body to support the pellicle body and including an upper portion which supports the pellicle body, wherein a width of the upper portion of the pellicle frame is greater than a width of a lower portion of the pellicle frame; and a pattern structure including a plurality of patterns on the entire surface of the pellicle body. The patterns include concavo-convex patterns which are configured in the same body as the pellicle body and include a plurality of concave patterns and a plurality of convex patterns.

