TECHNICAL FIELD

Devices and methods consistent with example embodiments relate to semiconductor devices including a spin-orbit torque (SOT) line and a contact plug, methods of operating the semiconductor devices, and methods of forming the semiconductor devices.

BACKGROUND

Research has been conducted into non-volatile memory devices incorporating magnetic tunnel junctions (MTJs). A device incorporating an MTJ may include a plurality of magnetic layers. For example, the MTJ may include two magnetic layers and a tunnel barrier layer disposed between the two magnetic layers, and a resistance of the MTJ may be changed according to magnetization directions of the two magnetic layers. In detail, the MTJ may have a high resistance when the magnetization directions of the two magnetic layers are anti-parallel to each other. The MTJ may have a low resistance when the magnetization directions of the two magnetic layers are parallel to each other. The memory device incorporating the MTJ may write/sense data by using a difference between the high and low resistances of the MTJ.

However, a process of patterning the plurality of magnetic layers may encounter various difficulties.

SUMMARY

The example embodiments of the inventive concepts are directed to providing improved semiconductor devices, which may provide an advantageous increase in mass production efficiency and may have excellent electrical characteristics, methods of operating the semiconductor devices, and methods of forming the semiconductor devices.

According to example embodiments, there is provided a semiconductor device including first and second contact plugs in an insulating layer that is on a substrate. The first and second contact plugs are spaced apart from each other. A spin-orbit torque (SOT) line is on the insulating layer and overlaps the first and second contact plug. A magnetic tunnel junction (MTJ) is on the SOT line. An upper electrode is on the MTJ. Each of the first and second contact plugs includes a recess region adjacent the SOT line. A sidewall of the recess region is substantially coplanar with a side surface of the SOT line and a side surface of the MTJ.

According to example embodiments, there is provided a semiconductor device including first and second switching elements on a substrate. An insulating layer is on the substrate and on the first and second switching elements. A first contact plug is in the insulating layer and is electrically connected to the first switching element. A second contact plug is in the insulating layer. The second contact plug is spaced apart from the first contact plug and electrically connected to the second switching element. An SOT line is on the insulating layer and overlapping the first and second contact plugs. An MTJ is on the SOT line. An upper electrode is on the MTJ. Each of the first and second contact plugs includes a recess region that is adjacent the SOT line. A sidewall of the recess region is substantially coplanar with a side surface of the SOT line and a side surface of the MTJ.

According to example embodiments, there is provided a semiconductor device including a first switching element and a second switching element on a substrate, a first contact plug electrically connected to the first switching element, a second contact plug electrically connected to the second switching element, the second contact plug spaced apart from the first contact plug, a spin-orbit torque (SOT) line on the substrate, a first portion of the SOT line overlapping the first contact plug and a second portion of the SOT line overlapping the second contact plug, a magnetic tunnel junction (MTJ) on the SOT line, and an upper electrode on the MTJ. An upper surface of the first contact plug comprises a first recess region, and a sidewall of the first recess region is substantially coplanar with a side surface of the SOT line and a side surface of the MTJ.

