BACKGROUND

A wide I/O memory device is a memory device having pins more than other kinds of memory devices. The wide I/O memory device can have a rapid data accessing speed, since it has large number of pins to access data.

FIG. 1is a cross sectional diagram illustrating a semiconductor structure for a related art wide I/O memory device. As shown inFIG. 1, the wide I/O memory device100has a memory cube MC and a logic die LI provided on a substrate Su. The memory cube MC comprises a plurality of memory dies MI. Vias VA (only one is marked by the symbol) are generated via a TSV (Through-Silicon Via) process, such that the memory cube MC and a logic die LI can be electrically connected to the conductive units Cu (ex. solder ball) or the substrate Su. However, the I/O memory device needs plenty of vias since it has many pins, but the TSV process causes high cost. Therefore, the cost for the I/O memory device is extremely high.

SUMMARY

Therefore, one objective of the present application is to provide a package structure that can be generated without the TSV process.

One embodiment of the present application provides a package structure, which comprises: a substrate, having at least one conductive units provided at a first surface of the substrate; at least one first die, provided on a second surface of the substrate; a connecting layer, provided on the first die; a second die, provided on the connecting layer, wherein the connecting layer comprises at least one bump for connecting the first die to the second die such that the first die and the second die are electrically connected; and at least one bonding wire, for electrically connecting the first die to the conductive units or the substrate. The connecting layer has a first touch side and a second touch side, the first touch side contacts a first surface of the first die and the second touch side contacts a second surface of the second die, an area of the first touch side is smaller than which for the first surface of the first die, and a size of the first die equals to which of the second die.

Another embodiment of the present application provides a package structure, which comprises: a substrate, having at least one conductive units provided at a first surface of the substrate; at least one first die, provided on a second surface of the substrate; a connecting layer, provided on the first die; a second die, provided on the connecting layer, wherein the connecting layer comprises at least one bump for connecting the first die to the second die such that the first die and the second die are electrically connected; and at least one bonding wire, for electrically connecting the first die to the conductive units or the substrate. A location for the first die or the second die is shifted.

In view of above-mentioned embodiments, a package structure can be produced without performing TSV processes. Therefore, the cost can be largely reduced.

These and other objectives of the present invention will no doubt become obvious to those of ordinary skill in the art after reading the following detailed description of the preferred embodiment that is illustrated in the various figures and drawings.

