CROSS-REFERENCE TO RELATED APPLICATION

The present application claims priority under 35 U.S.C. § 119(a) to Korean application number 10-2020-0038832, filed on Mar. 31, 2020, in the Korean Intellectual Property Office, which is incorporated herein by reference in its entirety.

BACKGROUND

1. Technical Field

Various embodiments generally relate to a semiconductor circuit, and more particularly, to a reference voltage generation circuit.

2. Related Art

It is necessary for a semiconductor circuit to use a reference voltage in order to process various signals and to supply power.

In a semiconductor circuit, for example, a volatile memory such as a dynamic random access memory (DRAM), a nonvolatile memory such as NAND flash, or a memory controller for controlling a memory, a reference voltage level needs to be constantly retained regardless of external voltage variation or/and temperature change, in order to raise the operation performance reliability of a product incorporating the semiconductor circuit.

SUMMARY

Various embodiments are directed to a reference voltage generation circuit capable of generating a reference voltage at a stable level.

In an embodiment, a reference voltage generation circuit may include: a first reference current path formed through a first node and a first transistor; a second reference current path formed through a second node and a second transistor; a first feedback loop configured to feed a first current back to the first and second reference current paths such that voltage levels of the first and second nodes are kept the same; and a second feedback loop configured to control the amounts of currents flowing through the first and second transistors according to a second current.

In an embodiment, a reference voltage generation circuit may include: a reference circuit configured to generate a first internal voltage, a second internal voltage and a pre-reference voltage, each of which is controlled to be a target value, by compensating for an offset caused by at least one of temperature change and voltage change, according to a first current and a second current; an amplifier circuit configured to amplify a voltage difference between the first and second internal voltages, and output an amplification signal; and a current control circuit configured to control the first and second currents according to the amplification signal.

In an embodiment, a reference voltage generation circuit may include: a reference circuit configured to generate a first internal voltage, a second internal voltage and a pre-reference voltage, each of which is controlled to be a target value, by compensating for an offset caused by at least one of temperature change and voltage change, according to a first current and a second current, each of which has a first characteristic, and a third current which has the first characteristic but has a different current variation ratio than either of the first and second currents; an amplifier circuit configured to amplify a voltage difference between the first and second internal voltages, and output an amplification signal; and a current control circuit configured to control the first and second currents according to the amplification signal.

