CROSS-REFERENCE TO RELATED APPLICATION

This application claims priority under 35 U.S.C. § 119 to Korean Patent Application No. 10-2018-0139392, filed on Nov. 13, 2018, in the Korean Intellectual Property Office, the disclosure of which is incorporated by reference herein in its entirety.

TECHNICAL FIELD

Exemplary embodiments of the inventive concept relate to a semiconductor manufacturing apparatus, and more specifically, to a plasma processing apparatus.

DISCUSSION OF RELATED ART

In general, processes, such as a deposition process, an etch process, or a cleaning process, are performed to manufacture semiconductor devices. Such processes may be performed through a deposition apparatus, an etch apparatus, and/or a cleaning apparatus that include a process chamber. For example, in an etch process, a plasma etch apparatus using a capacitively coupled plasma or an inductively coupled plasma has been used to etch a material layer on a substrate. As semiconductor devices are miniaturized and become highly integrated, it may be desirable for the semiconductor manufacturing processes to have uniform process characteristics.

SUMMARY

According to an exemplary embodiment of the inventive concept, a plasma processing apparatus may include a substrate chuck having a first surface for supporting a substrate, a second surface opposite to the first surface, and a sidewall, a focus ring for surrounding a perimeter of the substrate, and an edge block for supporting the focus ring. The edge block includes a side electrode on the sidewall of the substrate chuck and a bottom electrode on the second surface of the substrate chuck.

According to an exemplary embodiment of the inventive concept, a plasma processing apparatus may include a substrate chuck having a first surface for supporting a substrate, a second surface opposite to the first surface, and a sidewall, a focus ring for surrounding a perimeter of the substrate, an edge block including a body and an electrode in the body, where the body covers at least a portion of the sidewall and the second surface of the substrate chuck, and the electrode includes a side electrode on the sidewall of the substrate chuck and a bottom electrode on the second surface of the substrate chuck, a power supply unit for supplying radio frequency (RF) power to the substrate chuck, and a control unit the control unit including a variable capacitor connected to the electrode of the edge block. The control unit is configured to control an RF coupling operation between the substrate chuck and the electrode of the edge block by controlling the variable capacitor.

According to an exemplary embodiment of the inventive concept, a plasma processing apparatus may include a substrate chuck having a first surface for supporting a substrate and a second surface opposite to the first surface, a focus ring for surrounding a perimeter of the substrate, an edge block for supporting the focus ring, and including a plurality of sub-electrodes that are radially spaced apart from one another along a circumference of the substrate chuck, a power supply unit for supplying radio frequency (RF) power to the substrate chuck, and a control unit for controlling an RF coupling operation between the substrate chuck and each of the plurality of sub-electrodes.

