CROSS-REFERENCE TO RELATED APPLICATIONS

The present application is based on PCT filing PCT/JP2018/044829, filed Dec. 6, 2018, which claims priority to JP 2018-111698, filed Jun. 12, 2018, the entire contents of each are incorporated herein by reference.

TECHNICAL FIELD

The present invention relates to a power semiconductor module and a power conversion apparatus.

BACKGROUND ART

WO 2014/128899 (PTL 1) discloses semiconductor equipment including a plurality of semiconductor devices, a substrate having the plurality of semiconductor devices mounted thereon, and resin sealing the substrate and the plurality of semiconductor devices. The semiconductor devices and the substrate are partially covered with a glass film that contains vanadium and tellurium. The glass film prevents or reduces moisture from penetrating to the semiconductor devices and other components.

CITATION LIST

Patent Literature

PTL 1: WO 2014/128899

SUMMARY OF INVENTION

Technical Problem

However, while in operation or under an ambient temperature change, the semiconductor equipment disclosed in PTL 1 warps. This causes stress on the glass film, causing cracks in the glass film. The cracks in the glass film let moisture and gas through, decreasing the reliability of the semiconductor equipment. The present invention has been made in view of the above problem. An object of the present invention is to provide a power semiconductor module and a power conversion apparatus having improved reliability.

Solution to Problem

A power semiconductor module of the present invention includes an insulating substrate, a first conductive circuit pattern, a second conductive circuit pattern, a first semiconductor device, a second semiconductor device, a sealing member, and a first barrier layer. The insulating substrate includes a first main face. The first conductive circuit pattern is provided on the first main face. The second conductive circuit pattern is provided on the first main face. The second conductive circuit pattern is separated from the first conductive circuit pattern by a first gap. The first semiconductor device is joined to the first conductive circuit pattern. The second semiconductor device is joined to the second conductive circuit pattern. The sealing member seals the first semiconductor device, the second semiconductor device, the first conductive circuit pattern, and the second conductive circuit pattern. The first barrier layer is disposed on the opposite side from the insulating substrate with respect to the first semiconductor device and the second semiconductor device. The first barrier layer is provided on or in the sealing member. At least one of the first barrier layer and the sealing member includes a first stress relaxation portion.

A power conversion apparatus of the present invention includes a main conversion circuit and a control circuit. The main conversion circuit includes a power semiconductor module of the present invention and is configured to convert input power and output the converted power. The control circuit is configured to output a control signal to the main conversion circuit for controlling the main conversion circuit.

Advantageous Effects of Invention

In the power semiconductor module and the power conversion apparatus of the present invention, the first barrier layer prevents or reduces moisture and gas from penetrating to the first semiconductor device, the second semiconductor device, the first conductive circuit pattern, the second conductive circuit pattern, and the insulating substrate. The first stress relaxation portion reduces stress on the first barrier layer caused by the warp of the power semiconductor module, and prevents the first barrier layer from cracking. The power semiconductor module of the present invention has improved reliability.

