CROSS-REFERENCE TO RELATED APPLICATIONS

This application is based upon and claims the benefit of priority from Japanese Patent Applications No. 2020-050979, filed Mar. 23, 2020, the entire contents of which are incorporated herein by reference.

FIELD

Embodiments described herein relate generally to a structure.

BACKGROUND

In a structure having a semiconductor substrate with a trench formed thereon, a sidewall of the trench may be provided with a plurality of grooves each extending in a direction parallel to the surface of the semiconductor substrate. Use of such a structure can realize, for example, a capacitor having a large electric capacitance.

