BACKGROUND

This section is intended to provide information relevant to understanding the various technologies described herein. As the section's title implies, this is a discussion of related art that should in no way imply that it is prior art. Generally, related art may or may not be considered prior art. It should therefore be understood that any statement in this section should be read in this light, and not as any admission of prior art.

In modern circuit designs, conventional resistive memory devices are typically deficient in functional and/or operational applications. For instance, conventional resistive memory devices suffer from limited read margins during read operations. As such, there exists a need for redesigning resistive memory devices to include advanced sensing and referencing techniques for reading resistive memory cells due so as to thereby improve read margins when compared to other resistive memory technologies.

