TECHNICAL FIELD

The present disclosure relates to a substrate processing apparatus, a method of manufacturing a semiconductor device, and a recording medium.

BACKGROUND

In the related art, a substrate processing apparatus used in a semiconductor-device-manufacturing process is usually configured such that a transfer robot part for transferring a substrate transfers a substrate into a process chamber, a processing gas supply part supplies a processing gas, and a heater heats the substrate to a predetermined temperature, thereby performing a predetermined process such as a film-forming process or the like to the substrate in the process chamber.

SUMMARY

Some embodiments of the present disclosure provide a technique capable of extending the lifespan of a power source required for operation control of a substrate processing apparatus.

According to one or more embodiments of the present disclosure, there is provided a technique that includes a process chamber configured to process a substrate; a processing gas supply part configured to supply a processing gas to the substrate; a heater configured to heat the substrate; a transfer robot configured to transfer the substrate; a first power supply connected to at least one part selected from the group of the processing gas supply part, the heater, and the transfer robot; a first controller installed between the at least one part and the first power supply; a second power supply including two or more power sources configured to drive the first controller; and a second controller installed between the first controller and the second power supply and configured to allow power to be supplied to the first controller while setting a power ratio of each of the two or more power sources of the second power supply to a predetermined value.

