CROSS-REFERENCE TO RELATED APPLICATIONS

This application claims priority under 35 U.S.C. § 119 to Korean Patent Application No. 10-2019-0142668, filed on Nov. 8, 2019 in the Korean Intellectual Property Office, the disclosure of which is incorporated by reference herein in its entirety.

TECHNICAL FIELD

Exemplary embodiments of the present inventive concept relate to an image sensor, and more particularly, to an image sensor in which an electrical connection is provided between components of pixel regions included in the image sensor.

DISCUSSION OF THE RELATED ART

An image sensor is a device that converts optical images into electrical signals. An image sensor may be classified as a charge coupled device (CCD) type or a complementary metal oxide semiconductor (CMOS) type. A CMOS type image sensor may be abbreviated as CIS (CMOS image sensor). A CIS has a plurality of two-dimensionally arranged pixels. Each of the pixels includes a photodiode, which serves to convert incident light into electrical signals.

SUMMARY

Exemplary embodiments of the present inventive concept provide a compact-sized image sensor.

According to exemplary embodiments, an image sensor includes a substrate having a first surface and a second surface facing each other, a plurality of photoelectric conversion regions disposed in the substrate, an isolation pattern disposed in the substrate between the photoelectric conversion regions, a conductive connection pattern disposed on the isolation pattern and in a trench penetrating the first surface of the substrate, and a first impurity region disposed in the substrate and adjacent to the first surface of the substrate. A first sidewall of the conductive connection pattern is in contact with the first impurity region. A dopant included in the conductive connection pattern includes the same element as an impurity doped in the first impurity region.

According to exemplary embodiments, an image sensor includes a substrate having a first surface and a second surface facing each other, an isolation pattern penetrating the substrate and defining a plurality of pixel regions, a conductive connection pattern disposed in a trench penetrating the first surface of the substrate, the conductive connection pattern disposed on the isolation pattern, and a plurality of impurity regions disposed in the substrate and adjacent to the first surface of the substrate. The impurity regions include a first impurity region in contact with a first sidewall of the conductive connection pattern, and a second impurity region in contact with a second sidewall of the conductive connection pattern. The second sidewall faces the first sidewall, and the conductive connection pattern includes a doped semiconductor material.

According to exemplary embodiments, an image sensor includes a substrate having a first surface and a second surface facing each other, an isolation pattern defining a first pixel region and a second pixel region in the substrate, a photoelectric conversion region disposed in each of the first and second pixel regions in the substrate, a first impurity region disposed in the first pixel region of the substrate and adjacent to the first surface of the substrate, and a second impurity region disposed in the second pixel region of the substrate and adjacent to the first surface of the substrate. The image sensor further includes a conductive connection pattern disposed between the first impurity region and the second impurity region, the conductive connection pattern disposed in a trench penetrating the first surface of the substrate, a gate pattern disposed on the first surface of the substrate and spaced apart from the conductive connection pattern, a gate dielectric pattern disposed between the substrate and the gate pattern, and an interconnection layer disposed on the first surface of the substrate, the interconnection layer including a plurality of dielectric layers and a wiring structure. The image sensor further includes a color filter disposed on the second surface of the substrate, and a micro-lens disposed on the color filter. The isolation pattern includes a dielectric isolation pattern and a conductive isolation pattern disposed in the dielectric isolation pattern. The conductive connection pattern vertically overlaps the conductive isolation pattern. The conductive connection pattern is in physical contact with and is electrically connected to the first impurity region and the second impurity region.

