BACKGROUND

The present disclosure relates to the electrical, electronic and computer fields. In particular, the present disclosure relates to magnetoresistive random-access memory (“MRAM”) device cells including magnetic tunnel junction (“MTJ”) stacks and methods of manufacturing MRAM devices. Certain MTJ devices have a pillared structure (i.e., a stack of materials) having a cylindrical shape, where current flows from a top layer to a bottom layer, or vice versa, in order to switch the magnetization of a ferromagnetic layer. These types of MTJ devices are generally referred to as spin transfer torque (STT) MTJ devices. Other types of MTJ devices are referred to as spin orbit torque (SOT) devices. However, with certain SOT MTJ designs, a very large amount of SOT torque is not utilized at parts of the SOT layer which are not in contact with free layer. As a result, SOT torque switching efficiency is low and high current densities are needed to switch free layer.

SUMMARY

Embodiments of the present disclosure relate to a method of manufacturing a magnetic tunnel junction device. The method includes forming a conical insulator core, forming a conductor layer on the insulator core, forming a magnetic free layer on the conductor layer, forming a barrier layer on the magnetic free layer, and forming a magnetic fixed layer on the barrier layer.

Other embodiments relate to a magnetic tunnel junction. A magnetic tunnel junction device includes a conical insulator core, a conductor layer provided on the insulator core, a magnetic free layer provided on the insulator core, a barrier layer provided on the magnetic free layer, and a magnetic fixed layer provided on the barrier layer.

The above summary is not intended to describe each illustrated embodiment or every implementation of the present disclosure.

