BACKGROUND

Field

Implementations of the present disclosure generally relate to an apparatus for reducing particle contamination on substrates in a plasma processing chamber.

Description of the Related Art

Plasma-enhanced chemical vapor deposition (PECVD) process is a chemical process where electro-magnetic energy is applied to at least one precursor gas or vapor to transform the precursor into a reactive plasma. There are many advantages in using PECVD, including but not limited to lowering the temperature required to form a film, increasing the rate of formation of the film, enhancing the properties of the layers being formed. Particles of the gas or vapor ionized by the plasma diffuse through the plasma sheath and are absorbed onto the substrate to form a thin film layer. Plasma may be generated inside the processing chamber, i.e., in-situ, or in a remote plasma generator that is remotely positioned from the processing chamber. This process is widely used to deposit materials on substrates to produce high-quality and high-performance semiconductor devices.

Particle contamination during plasma processes such as PECVD is a major impediment to the deposition and etching of thin films during the production of these semiconductor devices. Therefore, improved apparatus are needed for reducing particle contamination in a plasma processing chamber.

SUMMARY

Implementations of the present disclosure generally relate to an apparatus for reducing particle contamination on substrates in a plasma processing chamber. In one implementation, the apparatus for reduced particle contamination includes a chamber body, and a lid coupled to the chamber body. The chamber body and the lid define a processing volume therebetween. The apparatus also includes a substrate support disposed in the processing volume and an edge ring. The edge ring includes an inner lip disposed over a substrate, a top surface connected to the inner lip, a bottom surface opposite the top surface and extending radially outward from the substrate support, and an inner step between the bottom surface and the inner lip.

In another implementation, a plasma processing apparatus is disclosed and includes a chamber body and a lid coupled to the chamber body. The chamber body and the lid define a processing volume therebetween. The plasma processing apparatus further includes a substrate support disposed in the processing volume and an edge ring disposed on the substrate support. The edge ring includes an inner lip extending radially inward and a top surface connected to the inner lip. The top surface of the edge ring is inclined. The edge ring also includes a bottom surface opposite the top surface and extending radially outward from the substrate support and an inner step between the bottom surface and the inner lip disposed on the substrate support.

In yet another implementation, a plasma processing apparatus is disclosed and includes a chamber body and a lid coupled to the chamber body. The chamber body and the lid define a processing volume therebetween. The plasma processing apparatus also includes a substrate support disposed in the processing volume and an edge ring disposed on the substrate support. The edge ring includes an inner lip extending radially inward and a top surface connected to the inner lip. The top surface of the edge ring is chamfered. The edge ring also includes a bottom surface opposite the top surface and extending radially outward from the substrate support and an inner step between the bottom surface and the inner lip disposed on the substrate support.

