BACKGROUND OF THE INVENTION

Field of the Invention

The present invention relates to a semiconductor device and a method of manufacturing the semiconductor device.

Description of the Background Art

In general, surface-mount power semiconductor modules are used without a heat sink. In this case, heat generated in a semiconductor chip inside a package is dissipated from its surface into air through resin constituting the package, or is dissipated from the inside of the package to a substrate through an externally connected terminal. Heat dissipation efficiency of a path in which heat is dissipated from a surface of a package into air depends on the size of the package of the power semiconductor module, and thus it is difficult to improve heat dissipation efficiency. In view of this, heat dissipation efficiency of a path in which heat is dissipated from the inside of a package to a substrate through a terminal has hitherto been improved by increasing the area of a circuit pattern of the substrate. However, with a growing demand of downsizing the substrate, increasing the area of a circuit pattern has become impracticable, raising fears that enhancement of performance of a semiconductor module may be limited due to the limitation of the heat dissipation area.

To improve heat dissipation performance of a semiconductor element, Japanese Patent Application Laid-Open No. 2017-99035 discloses a technology of injecting a filler for heat dissipation between a semiconductor element and a metal substrate through an injection hole provided in the metal substrate.

When a filler is provided between a package of a semiconductor module and a circuit substrate on which the semiconductor module is mounted, the package and the substrate come into close contact with each other through the filler. Accordingly, heat generated in a semiconductor chip inside the package is transferred from a lower portion of the package to a substrate. However, if such an injection hole provided in a substrate to inject a filler is located at a position below a semiconductor chip that generates a large amount of heat, heat generated in the semiconductor chip is transferred from a lower portion of a package to the injection hole. Specifically, the injection hole impairs an effect of heat dissipation from the semiconductor chip to the substrate.

SUMMARY

The present disclosure is made to solve the problems described above, and provides a semiconductor device that secures injectability of a filler and improves heat dissipation performance.

A semiconductor device according to the present disclosure includes a semiconductor module, a substrate, and a filler. The semiconductor module includes a semiconductor chip, a control integrated circuit (IC) configured to control driving of the semiconductor chip, and a package sealing the semiconductor chip and the control IC with an insulation material. On the substrate, the semiconductor module is mounted. The filler is provided between a lower surface of the package of the semiconductor module and the substrate. The substrate includes a through hole being provided at a position below the package and closer to the control IC than to the semiconductor chip in the package.

According to the present disclosure, the semiconductor device that secures the injectability of the filler and improves the heat dissipation performance is provided.

These and other objects, features, aspects and advantages of the present disclosure will become more apparent from the following detailed description of the present disclosure when taken in conjunction with the accompanying drawings.

