CROSS-REFERENCE TO RELATED APPLICATION

This application claims priority under 35 U.S.C. § 119 to Korean Patent Application No. 10-2019-0015474 filed on Feb. 11, 2019 in the Korean Intellectual Property Office, the disclosure of which is incorporated by reference herein in its entirety.

TECHNICAL FIELD

The present invention relates to a display device, and more particularly, to a display device including a driving transistor with a gate electrode including a plurality of holes.

DISCUSSION OF THE RELATED ART

The desire for display devices has increased with the development of multimedia. Correspondingly, various kinds of display devices such as a liquid crystal display (LCD) device and an organic light emitting diode (OLED) display device have been used. The OLED display device displays images using an organic light emitting element that generates light by recombination of electrons and holes. Typically, an OLED display device includes a plurality of transistors that provide a driving current to the organic light emitting element.

SUMMARY

According to an exemplary embodiment of the present invention, a display device includes: a substrate; a gate pattern disposed on the substrate; an oxide semiconductor layer disposed on the substrate, the oxide semiconductor layer includes a channel region that overlaps with the gate pattern; and an insulating film disposed on the gate pattern, the insulating film includes majority carrier supporting ions, wherein the gate pattern includes a plurality of gate holes, wherein the gate holes are formed inside a region of the gate pattern that does not overlap with the channel region of the oxide semiconductor layer, and wherein the channel region of the oxide semiconductor layer includes the majority carrier supporting ions.

In an exemplary embodiment of the present invention, the insulating film includes silicon nitride (SiNx) and is configured to provide the majority carrier supporting ions to the channel region of the oxide semiconductor layer via the plurality of gate holes.

In an exemplary embodiment of the present invention, the majority carrier supporting ions include hydrogen ions.

In an exemplary embodiment of the present invention, the oxide semiconductor layer further includes a source region and a drain region, wherein the source region is disposed adjacent to the channel region, wherein the drain region is spaced apart from the source region, and wherein the channel region is disposed between source region and the drain region.

In an exemplary embodiment of the present invention, the source region and the drain region do not overlap with the gate pattern in a thickness direction.

In an exemplary embodiment of the present invention, a concentration of the majority carrier supporting ions in the source region and the drain region is higher than a concentration of the majority carrier supporting ions in the channel region.

In an exemplary embodiment of the present invention, the display device further includes a source electrode and a drain electrode disposed on the insulating film, wherein the source electrode contacts the source region, wherein the drain electrode contacts the drain region, and wherein the oxide semiconductor layer, the gate pattern, the source electrode, and the drain electrode constitute a transistor.

In an exemplary embodiment of the present invention, the display device further includes a light emitting diode, wherein the transistor includes a driving transistor configured to transmit a driving current to the light emitting diode.

In an exemplary embodiment of the present invention, a concentration of the majority carrier supporting ions is substantially uniform in the channel region.

In an exemplary embodiment of the present invention, a minimum concentration of the majority carrier supporting ions in the channel region is within 0.9 times a maximum concentration of the majority carrier supporting ions in the channel region.

In an exemplary embodiment of the present invention, the plurality of gate holes are at least partially surrounded by the gate pattern and pass through the gate pattern from a surface of the gate pattern.

In an exemplary embodiment of the present invention, the plurality of gate holes are arranged in a direction in which the channel region of the oxide semiconductor layer extends.

In an exemplary embodiment of the present invention, the gate pattern includes a first gate pattern region, a second gate pattern region, and a third gate pattern region that overlaps with the channel region of the oxide semiconductor layer and is disposed between the first gate pattern region and the second gate pattern region; and the gate holes are disposed in the first gate pattern region and the second gate pattern region.

In an exemplary embodiment of the present invention, an arrangement density of the plurality of gate holes increases toward a central portion of the channel region of the oxide semiconductor layer.

In an exemplary embodiment of the present invention, the plurality of gate holes of the gate pattern are further disposed in a region of the gate pattern overlapping with the channel region of the oxide semiconductor layer.

In an exemplary embodiment of the present invention, an arrangement density of the plurality of gate holes disposed in the region of the gate pattern overlapping with the channel region is lower than an arrangement density of the plurality of gate holes disposed in the region of the gate pattern not overlapping with the channel region.

According to an exemplary embodiment of the present invention, a display device includes: a substrate; a gate pattern disposed on the substrate; an oxide semiconductor layer disposed on the substrate, the oxide semiconductor layer includes a channel region that overlaps with the gate pattern; and an insulating film disposed on an upper portion of the gate pattern, wherein the gate pattern includes a plurality of gate holes, wherein the gate holes are formed inside a region of the gate pattern that does not overlap with the channel region of the oxide semiconductor layer, wherein the insulating film is configured to provide majority carrier supporting ions to the channel region of the oxide semiconductor layer via the plurality of gate holes, and a concentration of the majority carrier supporting ions is substantially uniform in the channel region of the oxide semiconductor layer.

In an exemplary embodiment of the present invention, the majority carrier supporting ions include hydrogen ions, and a minimum concentration of the hydrogen ions in the channel region is within 0.9 times a maximum concentration of the hydrogen ions in the channel region.

In an exemplary embodiment of the present invention, the plurality of gate holes of the gate pattern are further disposed in a region of the gate pattern that overlaps with the channel region of the oxide semiconductor layer.

In an exemplary embodiment of the present invention, an arrangement density of the plurality of gate holes disposed in the region of the gate pattern overlapping with the channel region is lower than an arrangement density of the plurality of gate holes disposed in the region of the gate pattern not overlapping with the channel region.

