CROSS-REFERENCE TO RELATED APPLICATION

This application claims priority based on Japanese Patent Application No. 2019-063854, filed on Mar. 28, 2019, based on Article 119 of US Patent Law, and all the contents described in the Japanese priority application are incorporated herein by reference.

BACKGROUND

Technical Field

The disclosure relates to a substrate processing device, a substrate processing method, and a semiconductor manufacturing method.

Description of Related Art

In the substrate processing device disclosed in a patent document (Japanese Patent Laid-Open No. 2015-153947), oxidation of a substrate at a time of processing the substrate inside a chamber is curbed.

Specifically, a substrate is disposed above a spin base. A facing surface of a blocking member is disposed above the substrate. An inner circumferential surface of the blocking member is disposed around the substrate. Further, an inert gas is ejected downward from a downward ejection port which opens on the facing surface of the blocking member. The inert gas ejected through the downward ejection port of the blocking member diffuses into a space between an upper surface of the substrate and the facing surface of the blocking member and is discharged from between a lower end of the inner circumferential surface of the blocking member and an outer circumferential surface of the spin base. Since a space between the substrate and the blocking member is filled with the inert gas, an oxygen concentration in an atmosphere contact with the upper surface of the substrate and the outer circumferential surface is decreased.

In addition, movement of an atmosphere including oxygen between the upper surface of the substrate and the facing surface of the blocking member can be curbed by ejecting an inert gas through an upward ejection port of the spin base in a state where the inert gas is being ejected through the downward ejection port of the blocking member. As a result, the oxygen concentration in the atmosphere contact with a substrate W can be decreased.

Moreover, in a state where an inert gas is being ejected through the upward ejection port of the spin base, a substrate is placed on a chuck pin by a center robot. While the substrate approaches the chuck pin, the inert gas ejected through the upward ejection port of the spin base diffuses between the substrate and the spin base and discharges an atmosphere including oxygen. Since an atmosphere including oxygen is discharged in advance, movement of an atmosphere including oxygen from between the substrate and the spin base to a space between the substrate and the blocking member can be curbed.

However, recently, there has been a demand for further curbed oxidation of a substrate. Therefore, the inventor of this application has focused on a possibility of oxidation of a substrate at the time of conveying the substrate inside a chamber.

SUMMARY

The disclosure provides a substrate processing device, a substrate processing method, and a semiconductor manufacturing method, in which oxidation of a substrate at a time of conveying the substrate inside a chamber can be curbed.

According to an aspect of the disclosure, a substrate processing device performs processing of a substrate. The substrate processing device includes a substrate holding part, a chamber, a first gas supply part, a second gas supply part, and a control unit. The substrate holding part holds the substrate. The chamber has a side wall part disposed around the substrate holding part and a top wall part disposed above the substrate holding part and contains the substrate holding part. The first gas supply part is disposed in the top wall part and supplies a first gas toward a side on which the substrate holding part is positioned. The second gas supply part is contained in the chamber and supplies a second gas to an inside of the chamber. The control unit controls the first gas supply part and the second gas supply part. The second gas is a gas different from oxygen and different from an allotrope of oxygen. The second gas supply part has an air feeding port part for supplying the second gas to the inside of the chamber. The air feeding port part is positioned on an upward side of a holding position of the substrate by the substrate holding part in a vertical direction and is positioned on an outward side of the substrate holding part in a horizontal direction.

According to another aspect of the disclosure, there is provided a substrate processing method in which a substrate held by a substrate holding part inside a chamber is processed. The substrate processing method includes a step of supplying a first gas from a top wall part of the chamber toward a side on which the substrate holding part surrounded by a side wall part of the chamber is positioned, and a step of supplying a second gas to an inside of the chamber during a period different from a period of executing the step of supplying the first gas. The second gas is a gas different from oxygen and different from an allotrope of oxygen. In the step of supplying the second gas, the second gas is supplied from a position on an upward side of a holding position of the substrate by the substrate holding part in a vertical direction and a position on an outward side of the substrate holding part in a horizontal direction.

According to still another aspect of the disclosure, there is provided a semiconductor manufacturing method in which a semiconductor substrate held by a substrate holding part inside a chamber is processed and a semiconductor that is the processed semiconductor substrate is manufactured. The semiconductor manufacturing method includes a step of supplying a first gas from a top wall part of the chamber toward a side on which the substrate holding part surrounded by a side wall part of the chamber is positioned, and a step of supplying a second gas to an inside of the chamber during a period different from a period of executing the step of supplying the first gas. The second gas is a gas different from oxygen and different from an allotrope of oxygen. In the step of supplying the second gas, the second gas is supplied from a position on an upward side of a holding position of the semiconductor substrate by the substrate holding part in a vertical direction and a position on an outward side of the substrate holding part in a horizontal direction.

