CROSS-REFERENCE TO RELATED APPLICATION(S)

This application is based upon and claims the benefit of priority from Japanese Patent Application No. 2019-167499, filed on Sep. 13, 2019, the entire contents of which are incorporated herein by reference.

FIELD

Embodiments described herein relate generally to a method for forming an etching mask and a method for manufacturing a semiconductor device.

BACKGROUND

In a method for manufacturing a semiconductor device such as a three-dimensional memory, there is a technology of etching a workpiece by using a hard mask including a metal oxide as an etching mask.

