FIELD

Embodiments of the present disclosure generally relate to substrate processing equipment, and more specifically, process kits for use with substrate processing equipment.

BACKGROUND

In the current semiconductor manufacturing industry, feature sizes continue to decrease and transistor structures are increasingly complicated. To meet processing demands, advanced processing control techniques are useful to control cost and maximize substrate and die yield. Normally, the dies at the edge of the substrate suffer yield issues such as contact via misalignment, and poor selectivity to a hard mask. One of the causes of these issues is the bending of a plasma sheath near the substrate edge. Process kits having a secondary electrode proximate the substrate edge may be used to control bending of the plasma sheath near the substrate edge. However, the inventors have observed that existing designs of such secondary electrodes are not suitable for high power applications.

Accordingly, the inventors have provided embodiments of improved process kits.

SUMMARY

Embodiments of process kits for use in substrate processing chambers are provided herein. In some embodiments, a process kit for use in a substrate processing chamber includes an annular electrode configured to surround an electrostatic chuck, wherein the annular electrode includes an upper portion bonded to a lower portion and an annular channel disposed at an interface between the upper portion and the lower portion; wherein the annular electrode includes a first channel extending from a lower surface of the lower portion to the annular channel and a second channel extending from the lower surface of the lower portion to the annular channel; wherein the annular electrode is configured to flow a coolant from the first channel to the second channel via the annular channel to cool the annular electrode; and wherein the annular electrode includes at least one of a dielectric coating or a ceramic cap to reduce or prevent arcing between the annular electrode and the electrostatic chuck.

In some embodiments, a process kit for use in a substrate processing chamber includes an annular electrode configured to surround an electrostatic chuck, wherein the annular electrode includes an upper portion bonded to a lower portion and an annular channel disposed at an interface between the upper portion and the lower portion and a first channel fluidly coupled to the annular channel; a dielectric ring coupled to a lower surface of the annular electrode; and a coolant supply line extending through the dielectric ring and partially through the annular electrode to the annular channel.

In some embodiments, a substrate support includes an electrostatic chuck having an electrode embedded therein; and an annular electrode configured to surround the electrostatic chuck, wherein the annular electrode includes an upper portion bonded to a lower portion and an annular channel disposed at an interface between the upper portion and the lower portion; wherein the annular electrode includes an annular channel disposed in at least one of the upper portion and the lower portion; and wherein the annular electrode is configured to flow a coolant through the annular channel to cool the annular electrode; a base plate coupled to the electrostatic chuck and the annular electrode; an dielectric plate disposed between the electrostatic chuck and the base plate to electrically isolate the electrostatic chuck from the base plate; an dielectric ring disposed about the dielectric plate and between the annular electrode and the base plate to electrically isolate the electrostatic chuck from the base plate; and a coolant supply line extending from a bottom surface of the base plate to the annular channel via the dielectric ring.

Other and further embodiments of the present disclosure are described below.

