BACKGROUND

Semiconductor devices may be subjected to various effects which can lead to damage of the semiconductor device. For example, semiconductor devices may be subjected to electrostatic discharge (ESD) events. US 2018/0090479 A1 discloses a semiconductor device comprising a transistor arrangement with a diode structure coupled between a gate structure and a source structure of the transistor arrangement. The diode structure is intended to provide protection for the transistor arrangement against ESD events. However, further improvements to the protection provided for semiconductor devices against ESD events are desirable.

SUMMARY

In an embodiment, a semiconductor die comprises a transistor device that comprises a cell field and an edge termination region, a source pad arranged on the cell field, a gate pad arranged laterally adjacent the cell field and in the edge termination region, a shielding region laterally surrounding the cell field, the shielding region comprising a non-depletable doped region. The polysilicon ESD protection diode is arranged laterally between the gate pad and the source pad and vertically above at least a portion of the shielding region. The polysilicon ESD protection diode comprises at least two separate sections that are electrically coupled in parallel between the gate pad and the source pad. The sections are laterally spaced apart by a gap situated at a corner of the gate pad.

In an embodiment, a semiconductor die comprises a transistor device that comprises a cell field and an edge termination region, a source pad arranged on the cell field, a gate pad laterally arranged laterally adjacent the cell field and in the edge termination region, a shielding region laterally surrounding the cell field, the shielding region comprising a non-depletable doped region. The polysilicon ESD protection diode is arranged laterally between the gate pad and the source pad and vertically above at least a portion of the shielding region. The polysilicon ESD protection diode extends along two adjoining sides of the gate pad and comprises a concave portion extending around a corner of the gate pad formed between the two adjoining sides and a convex portion that extends away from the gate pad at each end of the polysilicon ESD protection diode.

Those skilled in the art will recognize additional features and advantages upon reading the following detailed description, and upon viewing the accompanying drawings.

