CROSS-REFERENCE TO RELATED APPLICATION(S)

This application is based upon and claims the benefit of priority from Japanese Patent Application No. 2018-231736, filed Dec. 11, 2018, the entire contents of which are incorporated herein by reference.

FIELD

Embodiments described herein relate generally to a substrate treatment device, a substrate treatment method and a semiconductor device manufacturing method.

BACKGROUND

A technique of supplying a metal to a channel semiconductor layer of a semiconductor memory and crystallizing the channel semiconductor layer has been discussed.

Examples of related art include: Zhiguo Meng et al., “Polycrystalline Silicon Films and Thin-Film Transistors Using Solution-Based Metal-Induced Crystallization”, Journal of Display Technology, VOL. 2, NO. 3, September 2006 (265-273); and Masakazu Muto et al., “A Noncontact Picolitor Droplet Handling by Photothermal Control of Interfacial Flow”, Analytical Sciences, January 2016, VOL. 32.

