CROSS-REFERENCE TO RELATED APPLICATION(S)

This application claims the benefit of and priority to Korean Patent Application No. 10-2019-0150271, filed on Nov. 21, 2019 in the Korean Intellectual Property Office, the disclosure of which is herein incorporated by reference in its entirety.

TECHNICAL FIELD

The present disclosure relates to a semiconductor device, and more specifically, to a semiconductor device having a metal oxide semiconductor (MOS) structure.

DISCUSSION OF THE RELATED ART

Electronic devices are becoming more compact, lighter, and more versatile. Accordingly, power metal oxide semiconductor (MOS) transistors are often used in various types of semiconductor devices. One example of such a power MOS transistor is a Laterally Diffused Metal Oxide Semiconductor (LDMOS) transistor. In the LDMOS transistor, a channel region and a drain electrode are divided by a drift region and/or a well region, so an operation thereof could be controlled by a gate electrode.

SUMMARY

A semiconductor device includes a semiconductor substrate. A drift region having a first conductivity type is disposed in the semiconductor substrate. A body region is disposed in the semiconductor substrate adjacent to the drift region. The body region has a second conductivity type. A drain region is disposed opposite to the body region in the drift region. A drain isolation insulating film is disposed in a portion adjacent to the drain region of the drift region. A gate insulating film is disposed on the semiconductor substrate and is extended over both a portion of the body region and a portion of the drift region. A gate electrode is disposed on the gate insulating film. The gate electrode has at least one closed-type opening.

A semiconductor device includes a semiconductor substrate. A drift region having a first conductivity type is disposed in the semiconductor substrate and extends to an upper surface of the semiconductor substrate. A body region having a second conductivity type is disposed in the semiconductor substrate and shares a boundary with the drift region. The body region extends to an upper surface of the semiconductor substrate. A gate insulating film is disposed on a boundary between the body region and the drift region and extends over both a portion of the body region and a portion of the drift region. A gate electrode is disposed on the gate insulating film and has a plurality of closed-type openings. Each of the plurality of closed-type openings has a region overlapping the drift region.

A semiconductor device includes a semiconductor substrate. A drift region having a first conductivity type is disposed in the semiconductor substrate. A body region having a second conductivity type is disposed in the semiconductor substrate and is adjacent to the drift region. A drain region having the first conductivity type is disposed opposite to the body region in the drift region. A source region having the first conductivity type is disposed in the body region. A body contact region having the second conductivity type is disposed adjacent to the source region in the body region. A drain isolation insulating film is disposed in a portion adjacent to the drain region of the drift region. A gate electrode is disposed on the semiconductor substrate and extends over both a portion of the body region and a portion of the drift region. The gate electrode has at least one closed-type opening. A gate insulating film is disposed between the gate electrode and the semiconductor substrate. A first conductivity type impurity region is disposed in the drift region at least partially overlapping the at least one closed-type opening and has an impurity concentration that is greater than an impurity concentration of the drift region.

