CROSS-REFERENCE TO RELATED APPLICATION

The present application claims priority under 35 U.S.C. § 119(a) to Korean patent application number 10-2019-0150801 filed on Nov. 21, 2019, the entire disclosure of which is incorporated herein by reference.

BACKGROUND

1. Technical Field

Various embodiments of the present disclosure generally relate to an electronic device, and more particularly, to a semiconductor memory device and a method of operating the semiconductor memory device.

2. Related Art

Generally, a semiconductor memory device may have a two-dimensional structure in which strings are horizontally arranged on a semiconductor substrate, or a three-dimensional structure in which strings are vertically stacked on a semiconductor substrate. The three-dimensional semiconductor memory device may be a device which is devised to overcome a limitation in the degree of integration of the two-dimensional semiconductor memory device, and may include a plurality of memory cells which are vertically stacked on a semiconductor substrate.

A controller may control the operation of the semiconductor memory device.

SUMMARY

An embodiment of the present disclosure may provide for a semiconductor memory device may be operated under control of a controller. The semiconductor memory device may include a control logic and a data input and output circuit. The control logic may store logic data and generate a plurality of pieces of circular data based on the logic data in response to an output command of the logic data, the output command being received from the controller. The data input and output (input/output) circuit may select circular data corresponding to a set warm-up cycle among the plurality of pieces of circular data and output the selected circular data to the controller.

The control logic may include: a logic data storage, a circular data generator, a parameter storage, and a control signal generator. The logic data storage may store the logic data. The circular data generator may generate a plurality of pieces of circular data corresponding to a plurality of warm-up cycles based on the logic data, and output the circular data to the data input/output circuit. The parameter storage may store a set warm-up cycle value. The control signal generator may generate a control signal for controlling an operation of the data input/output circuit based on the set warm-up cycle value.

An embodiment of the present disclosure may provide for a method of operating a semiconductor memory device configured to communicate with a controller, the method may include: receiving an output command of logic data from the controller; generating a plurality of pieces of circular data based on the logic data; selecting circular data corresponding to a set warm-up cycle among the plurality of pieces circular data; and outputting the selected circular data.

