CROSS-REFERENCE TO RELATED APPLICATION(S)

This application is based upon and claims the benefit of priority from Japanese Patent Application No. 2020-037061, filed Mar. 4, 2020, the entire contents of which are incorporated herein by reference.

FIELD

Embodiments described herein relate generally to a nonvolatile semiconductor storage device and a method for performing a read operation on the nonvolatile semiconductor storage device.

BACKGROUND

A NAND type flash memory is known one type of a nonvolatile semiconductor storage device. In order to increase the capacity of the NAND type flash memory, a three-dimensional NAND type flash memory in which multiple memory cells are arranged in a three-dimensional manner has been put to a practical use. Various forms of three-dimensional NAND type flash memory include, for example, a form in which memory strings are vertically formed, and a form in which memory strings are horizontally formed.

