CROSS REFERENCE TO RELATED APPLICATIONS

This application is a national stage application under 35 U.S.C. 371 and claims the benefit of PCT Application No. PCT/JP2018/018039 having an international filing date of 10 May 2018, which designated the United States, which PCT application claimed the benefit of Japanese Patent Application No. 2017-102661 filed 24 May 2017, the entire disclosures of each of which are incorporated herein by reference.

TECHNICAL FIELD

The present disclosure relates to a solid-state imaging device and an electronic device, and more particularly to a solid-state imaging device and an electronic device which efficiently capture incident light to improve sensitivity while maintaining the effect of suppressing noise generation.

BACKGROUND ART

Back-illuminated solid-state imaging devices each include a memory and a global shutter function, and the memory is located in silicon (Si) on a side opposite to a light receiving side (incident surface). If incident light leaks into the memory and the vicinity thereof, noise is caused in photoelectric conversion, and therefore a light-shielding film embedded in a groove arranged so as to surround the memory and a light-shielding film including a lid section configured to cover a surface of the memory are formed on an incident surface side (see Patent Document 1).

CITATION LIST

Patent Document

Patent Document 1: Japanese Patent No. 5794068

SUMMARY OF THE INVENTION

Problems to be Solved by the Invention

The light-shielding film arranged to suppress light leakage to the memory includes an embedded section embedded in the groove arranged in a wider area to surround the memory, and the lid section covering the surface of the memory. Therefore, an opening of a photo diode to the side irradiated with light is limited, and reduction in sensitivity is caused. Furthermore, electric charge generated in a portion surrounded by the light-shielding film is taken into the memory and causes noise.

The present disclosure has been made in view of such a situation and makes it possible to efficiently capture incident light to improve sensitivity while maintaining the effect of suppressing noise generation.

Solutions to Problems

A solid-state imaging device according to an aspect of the present technology includes a memory that is located on a side opposite from a light receiving surface and formed in the same substrate of Si as a photoelectric conversion element, and a bottom light-shielding film that is formed at a bottom portion of a hole defined by digging the Si deep from the light receiving surface, at a position where the memory is formed.

An electronic device according to an aspect of the present technology includes: a solid-state imaging device that includes: a memory that is located on a side opposite from a light receiving surface and formed in the same substrate of Si as a photoelectric conversion element; and a bottom light-shielding film that is formed at a bottom portion of a hole defined by digging the Si deep from the light receiving surface, at a position where the memory is formed; a signal processing circuit configured to process an output signal output from the solid-state imaging device; and an optical system configured to input incident light into the solid-state imaging device.

In an aspect of the present technology, a memory is located on a side opposite from a light receiving surface and formed in the same substrate of Si as a photoelectric conversion element, and a bottom light-shielding film is formed at a bottom portion of a hole defined by digging the Si deep from the light receiving surface, at a position where the memory is formed.

Effects of the Invention

According to the present technology, it is possible to efficiently capture incident light to improve sensitivity while maintaining the effect of suppressing noise generation.

Note that effects described in the present description are by way of example only, and the effects of the present technology are not limited to the effects described in the present description, and other effects may be added.

