FIELD

Embodiments of the present disclosure generally relate to the field of integrated circuits, and more particularly, to memory arrays.

BACKGROUND

Memory devices are important parts of integrated circuits (IC) and modern electronic devices. A memory device, e.g., a dynamic random access memory (DRAM) array, may include a plurality of memory cells, where a memory cell may include a selector, e.g., a transistor, to control the access to a storage cell. When a silicon transistor is used as a selector, the silicon transistor may be very leaky, which may bring adverse impact to the performance of the storage cell.

A thin-film transistor (TFT) is a kind of field-effect transistor including a channel layer, a gate electrode, and source and drain electrodes, over a supporting but non-conducting substrate. A TFT differs from a conventional transistor, where a channel of the conventional transistor is typically within a substrate, such as a silicon substrate. TFTs have emerged as an attractive option to fuel Moore's law by integrating TFTs in the back-end, while leaving the silicon substrate areas for high-speed transistors. A TFT may be used as a selector for a memory cell in a memory device, e.g., a DRAM device. However, current designs and implementations of memory devices, e.g., DRAM devices, still face many challenges.

