FIELD OF THE DISCLOSURE

Generally, the present disclosure relates to various novel embodiments of a lateral bipolar junction transistor (BJT) device and various novel methods of making such a lateral BJT device.

BACKGROUND

Bipolar junction transistor (BJT) devices are widely used in many integrated circuit products. In general, a BJT device comprises a collector region, a base region, and an emitter region. The BJT device may be either an PNP device or an NPN device. In a PNP BJT device, current flows from the emitter to the base and exits the BJT device via the collector. In an NPN BJT device, current flows from the collector to the base and exits the BJT device via the emitter. Device designers are under constant pressure to increase the operating speed and electrical performance of BJT devices and integrated circuit products that employ such BJT devices.

A system-on-a-chip (SoC) is an integrated circuit product that includes all of the components needed for a system, e.g., a computer. Such an SOC chip may include one or more central processors and co-processors, graphics drivers, memory, power management circuits, wireless communication interfaces, and other parts of a fully functional system. Further, because the signals among the various components on the SoC are kept on-die, power requirements of the system on the SoC can be reduced. SoC devices may be formed using BiCMOS technology, which involves the formation of both BJT devices and CMOS field effect transistors (N-type and P-type) on a single chip. Techniques are needed to effectively and efficiently form BJT devices and CMOS transistors in BiCMOS technology applications.

SUMMARY

The following presents a simplified summary of at least one disclosed embodiment in order to provide a basic understanding of some aspects of the subject matter disclosed herein. This summary is not an exhaustive overview of all of the subject matter disclosed herein. It is not intended to identify key or critical elements of the subject matter disclosed herein or to delineate the scope of any claims directed to any of the subject matter disclosed herein. Its sole purpose is to present some concepts in a simplified form as a prelude to the more detailed description that is discussed later in the application.

The present disclosure is generally directed to various novel embodiments of a lateral bipolar junction transistor (BJT) device and various novel methods of making such a lateral BJT device.

One illustrative device disclosed herein according to embodiments includes: a semiconductor substrate, the semiconductor substrate having an upper surface; and a bipolar junction transistor (BJT) device, the BJT device comprising a collector region, a base region, and an emitter region positioned in the semiconductor substrate, the base region being positioned between the collector region and the emitter region; the base region comprising a top surface and a bottom surface, wherein a first width of the top surface of the base region in a base width direction of the BJT device is greater than a second width of the bottom surface of the base region in the base width direction of the BJT device.

A lateral bipolar junction transistor (BJT) device according to embodiments includes: a collector region, a base region, and an emitter region positioned in a semiconductor substrate, the base region being positioned between the collector region and the emitter region; the base region comprising a top surface and a bottom surface, wherein a first width of the top surface of the base region in a base width direction of the lateral BJT device is greater than a second width of the bottom surface of the base region in the base width direction of the lateral BJT device, wherein a section of the collector region and a section of the emitter region extend under portions of the base region and are separated by a distance equal to the second width.

A method according to embodiments includes: providing a semiconductor substrate, the semiconductor substrate having an upper surface; and forming a bipolar junction transistor (BJT) device in the semiconductor substrate, the BJT device comprising a collector region, a base region, and an emitter region positioned in the semiconductor substrate, the base region being positioned between the collector region and the emitter region and including a top surface and a bottom surface, wherein a first width of the top surface of the base region in a base width direction of the BJT device is greater than a second width of the bottom surface of the base region in the base width direction of the BJT device.

