TECHNICAL FIELD

Embodiments of the disclosure relate to input/output capacitance measurement. More specifically, various embodiments relate to measuring an input/output capacitance of a semiconductor device, and to related methods, devices, and systems.

BACKGROUND

Memory devices are typically provided as internal, semiconductor, integrated circuits in computers or other electronic systems. There are many different types of memory including, for example, random-access memory (RAM), read only memory (ROM), dynamic random access memory (DRAM), synchronous dynamic random access memory (SDRAM), resistive random access memory (RRAM), double data rate memory (DDR), low power double data rate memory (LPDDR), phase change memory (PCM), and Flash memory.

A memory device stores digital data in an array of memory cells. To read information from such an array, a memory cell is sensed for the presence or absence of charge. The information may amplified and transferred from the memory device. Typically, an output driver, which may be coupled to or is part of an output buffer, may be used to transfer the information from the memory device.

