CROSS-REFERENCE TO RELATED APPLICATION(S)

This application is based upon and claims the benefit of priority from Japanese Patent Application No. 2020-053410, filed Mar. 24, 2020, the entire contents of which are incorporated herein by reference.

FIELD

Embodiments described herein relate generally to a semiconductor device.

BACKGROUND

A semiconductor device including a capacitor formed of a semiconductor substrate, a first semiconductor layer on the semiconductor substrate, and a second semiconductor layer on the first semiconductor layer is known.

