FIELD OF THE DISCLOSURE

The present embodiments relate to semiconductor device surface treatments, and more particularly, to systems and methods for spatially resolved optical metrology of an ion beam.

BACKGROUND OF THE DISCLOSURE

Plasma etchers utilize directed ribbon ion beams to achieve complex etching and surface processing, thus solving many challenges in the fabrication of most advanced 3D semiconductor structures. Characterization of the ion beam, monitoring process end-points, and advanced plasma probing are relevant metrologies necessary for implanter operations. Currently, the metrologies are achieved with different mechanisms, such as Faraday cup arrays and free space optical emission spectrum (OES). These approaches have their limits and disadvantages. For example, the Faraday cup array is an in-chamber metrology device. As a result, the Faraday cup array presentation brings in extra particles and metals. Furthermore, patch charges accumulated on the shield of the Faraday cup array may also perturb the beam path and give results deviating from the actual values. The free space OES is widely adopted in process endpoint control, yet cannot resolve the ion beam's spatial distribution, and may suffer from various optical noises from the environment and from different materials in the etching beam.

The present disclosure addresses at least the above identified deficiencies of the prior art.

SUMMARY OF THE DISCLOSURE

The Summary of the Disclosure is provided to introduce a selection of concepts in a simplified form. The Summary of the Disclosure is not intended to identify key features or essential features of the claimed subject matter, nor intended as an aid in determining the scope of the claimed subject matter.

In an example embodiment, a system may include a chamber containing an ion source operable to deliver an ion beam to a wafer, and an optical collection module operable with the chamber, wherein the optical collection module includes an optical device for measuring a light signal of a volume of the ion beam. The system may further include a detection module operable with the optical collection module, the detection module comprising a detector for receiving the measured light signal and outputting an electric signal corresponding to the sampled volume of the ion beam.

In another example embodiment, a system for spatially resolved optical metrology of an ion beam may include a chamber containing an ion source operable to deliver an ion beam to a wafer, wherein the ion beam is a ribbon ion beam. The system may further include an optical collection module operable with the chamber, the optical collection module including an optical device, and a first plate adjacent the optical device, the first plate having a first aperture for receiving a sample of the ion beam. The optical collection module may further include a second plate adjacent the first plate, the second plate having a second aperture for receiving a light signal measured from a sample of the ion beam from the first plate. The system may further include a detection module operable with the optical collection module, the detection module comprising a detector operable to receive the light through second plate, and output an electric signal corresponding to the sample of the ion beam.

In another example embodiment, a method may include providing a chamber containing an ion source delivering an ion beam to a wafer, and measuring a light signal of a portion of the ion beam using an optical collection module operable with the chamber. The optical collection module may include an optical device adjacent the chamber, and a first plate adjacent the optical device, the first plate having a first aperture receiving the light signal. The optical collection module may further include a second plate adjacent the first plate, the second plate having a second aperture receiving the light signal through the first plate. The method may further include receiving the light signal at a detection module, and outputting an electric signal from the detection module, the electric signal corresponding to the measured light signal.

