BACKGROUND OF THE INVENTION

Field

The present disclosure relates to a silicon carbide semiconductor device and a method for manufacturing the same.

Background

A silicon carbide crystal is promising as a material of a next-generation switching device which can realize high voltage resistance, low loss and high-temperature operation (see, for example, JP 2012-244083 A).

SUMMARY

However, a silicon carbide crystal involves a number of crystal defects such as a stacking fault. In a conventional silicon carbide semiconductor device, there is a problem in that as a result of a leak current occurring due to a crystal defect in a wafer or a crystal defect occurring upon epitaxial growth, a yield degrades.

The present disclosure has been made to solve the problem as described above, and an object of the present disclosure is to obtain a silicon carbide semiconductor device which can improve a yield, and a method for manufacturing the same.

A silicon carbide semiconductor device according to the present disclosure includes: a silicon carbide layer of a first conductive type including a defect region in which a crystal defect exists; a plurality of well regions of a second conductive type formed on the silicon carbide layer; source regions of the first conductive type formed in the well regions; gate oxide films formed on the silicon carbide layer, the well regions and the source regions; gate electrodes formed on the gate oxide films; and a source electrode electrically connected to the well regions and the source regions, wherein the source region is not formed in the defect region.

In the present disclosure, the source region is not formed in the defect region. If the source region is not formed, because a transistor is not turned on even if a voltage is applied to the gate electrode, a leak current does not occur. As a result, it is possible to improve a yield.

Other and further objects, features and advantages of the invention will appear more fully from the following description.

