This application claims priority from Korean Patent Application No. 10-2018-0064846, filed on Jun. 5, 2018 in the Korean Intellectual Property Office, the disclosure of which is incorporated by reference herein in its entirety.

BACKGROUND

1. Technical Field

Apparatuses, devices, and articles of manufacture consistent with the present disclosure relate to a light emitting diode apparatus.

2. Description of the Related Art

Semiconductor light emitting elements emit light by using the recombination principle of electrons and holes when a current is applied, and are widely used as light sources due to their various advantages such as low power consumption, high luminance, miniaturization, etc. In particular, since nitride-based light emitting elements were developed, the semiconductor light emitting elements are more widely used in various fields, and are employed as light source modules, home lighting devices, automobile light, etc.

As the semiconductor light emitting elements are widely used in various fields, their utilization is expanding to high current/high output fields. As the semiconductor light emitting elements are used in the high current/high output fields as described above, research for enhancing the reliability of semiconductor light emitting element packages is ongoing in the relevant technical fields.

SUMMARY

It is an aspect to provide a light emitting diode apparatus having enhanced light extraction efficiency.

According to an aspect of an exemplary embodiment, there is provided a light emitting diode apparatus, comprising a wavelength conversion layer having a first refractive index, a light emitting diode layer comprising a base layer arranged on the wavelength conversion layer, and a light emitting structure layer arranged on the base layer, a light transmission layer arranged on the wavelength conversion layer, surrounding a sidewall of the light emitting diode layer and contacting the sidewall of the light emitting diode layer, and having a second refractive index, and a sheath layer arranged to cover the light emitting diode layer and the light transmission layer, and having a third refractive index less than the second refractive index.

According to another aspect of an exemplary embodiment, there is provided a light emitting diode apparatus, comprising a wavelength conversion layer having a first refractive index, a light emitting diode layer arranged on the wavelength conversion layer, a light transmission layer arranged on the wavelength conversion layer, surrounding a sidewall of the light emitting diode layer, and having a second refractive index less than the first refractive index, a sheath layer arranged to cover the light emitting diode layer and the light transmission layer, and having a third refractive index less than the second refractive index, and a bump arranged on the light emitting diode layer and electrically connected with the light emitting diode layer.

According to another aspect of an exemplary embodiment, there is provided a light emitting diode apparatus, comprising a wavelength conversion layer having a first refractive index, a light emitting diode layer comprising a base layer arranged on the wavelength conversion layer, and a light emitting structure layer arranged on the base layer, a light transmission layer arranged on the wavelength conversion layer, surrounding a sidewall of the light emitting diode layer and contacting the sidewall of the light emitting diode layer, and having a second refractive index less than the first refractive index, and a sheath layer arranged to cover the light emitting diode layer and the light transmission layer, and having a third refractive index less than the first refractive index.

The aspects to be addressed are not limited to those mentioned above, and other aspects that are not mentioned above may be clearly understood to those skilled in the art based on the description provided below.

