TECHNICAL FIELD

The present disclosure relates to a field of display technology, and particularly to a display panel and a manufacturing method for the display panel.

BACKGROUND

A display apparatus has advantages, such as a thin body, saving-power, no radiation, and is widely used. A conventional display apparatus mostly is a backlight display apparatus including a display panel and a backlight module. Operating principle of the display apparatus is that liquid crystal (LC) molecules are disposed between two substrates, where the two substrates are parallelly disposed, and a driver voltage applies on the two substrates to control a rotation direction of the LC molecules, so that light of a backlight module are refracted to generate images.

A thin film transistor-liquid crystal display (TFT-LCD) has some performances, such as low power consumption, excellent image quality, and high production yield, which has gradually occupied main position of a display field. The TFT-LCD includes a display panel and the backlight module, where the display panel includes a color filter (CF) substrate and a TFT substrate. A transparent electrode is disposed on inner side of the two substrates and the LC layer is disposed between the two substrates. The display panel controls the rotation direction of the LC molecules through electrical field, a polarization state of the light is changed, and penetration and blocking of light path are achieved through a polarizing plate to display.

As a liquid crystal display (LCD) product tends to develop into high-resolution, an LCD technology also has some urgent problems to solve. For example, a conventional display panel is not enough intelligent: when the conventional display panel is under the sun, the backlight of the conventional display panel is too dark to see the image, however, when the conventional display panel is in the dark, the conventional display panel is too bright and glare.

It should be noticed that a description of related prior art is to clearly and completely described for the technical scheme of the present disclosure, which is convenient to understand for a person skilled in the art. The above technology scheme is not considered to be known to the person skilled in the art because the above technology scheme is described in the background of the present disclosure.

SUMMARY

A main technical problem solved by the present disclosure is to provide a display panel and a manufacturing method capable of autonomic adjustment according to external environment.

The present disclosure provides a display panel, comprising:

a substrate;

a switch assembly disposed on the substrate; the switch assembly comprises an indium gallium zinc oxide (IGZO) layer; and

a light-sensing assembly disposed on a side of the switch assembly.

The present disclosure provides a display panel, comprising:

a substrate;

a switch assembly disposed on the substrate; the switch assembly comprises an indium gallium zinc oxide (IGZO) layer; and

a light-sensing assembly disposed on a side of the switch assembly.

Furthermore, the switch assembly further comprises an etching barrier layer. The etching barrier layer is disposed on the IGZO layer.

A light-sensing metal layer is disposed on an extended portion of the etching barrier layer and the light-sensing assembly is disposed on the light-sensing metal layer.

A transparent conducting layer is disposed on the light-sensing metal layer.

The light-sensing assembly comprises a P-type semiconductor layer, an intrinsic semiconductor layer, and an N-type semiconductor layer in order on the light-sensing metal layer.

Furthermore, the switch assembly comprises a gate electrode metal layer, a gate insulation layer, the IGZO layer, an etching barrier layer, a source electrode layer, and a drain electrode layer on the substrate in sequence. The source electrode layer and the drain electrode layer are in a same layer.

A light-sensing metal layer is disposed on an extended portion of the etching barrier layer and the light-sensing assembly is disposed on the light-sensing metal layer.

The light-sensing metal layer, the source electrode layer, and the drain electrode layer are in the same layer.

Furthermore, the switch assembly comprises a gate electrode metal layer, a gate insulation layer, the IGZO layer, an etching barrier layer, a source electrode layer, and a drain electrode layer on the substrate in sequence. The source electrode layer and the drain electrode layer are in a same layer.

Furthermore, the switch assembly further comprises an etching barrier layer. The etching barrier layer is disposed on the IGZO layer, and the light-sensing assembly is disposed on an extended portion of the etching barrier layer.

Furthermore, a light-sensing metal layer is disposed on an extended portion of the etching barrier layer and the light-sensing assembly is disposed on the light-sensing metal layer.

A transparent conducting layer is disposed on the light-sensing metal layer.

Furthermore, the light-sensing assembly comprises a P-type semiconductor layer, an intrinsic semiconductor layer, and an N-type semiconductor layer in order on the light-sensing metal layer.

Furthermore, a passivation layer covers the switch assembly and the light-sensing assembly.

Furthermore, a transparent conducting layer is disposed on the passivation layer corresponding to the switch assembly, and a transparent conducting layer is disposed on the passivation layer corresponding to the light-sensing assembly.

Furthermore, a light-sensing metal layer is disposed on an extended portion of the etching barrier layer and the light-sensing assembly is disposed on the light-sensing metal layer.

The light-sensing metal layer, the source electrode layer, and the drain electrode layer are in the same layer.

Furthermore, a passivation layer covers the switch assembly and the light-sensing assembly.

A transparent conducting layer is disposed on the passivation layer corresponding to the switch assembly, and a transparent conducting layer is disposed on the passivation layer corresponding to the light-sensing assembly.

The present disclosure provides

a substrate;

a switch assembly disposed on the substrate; the switch assembly comprises an indium gallium zinc oxide (IGZO) layer, and

a light-sensing assembly disposed on a side of the switch assembly.

The switch assembly comprises a gate electrode metal layer, a gate insulation layer, the IGZO layer, an etching barrier layer, a source electrode layer, and a drain electrode layer on the substrate in sequence, where the source electrode layer and the drain electrode layer are in a same layer.

The switch assembly further comprises an etching barrier layer; the etching barrier layer is disposed on the IGZO layer light-sensing assembly is disposed on an extended portion of the etching barrier layer.

A light-sensing metal layer is disposed on the extended portion of the etching barrier layer and the light-sensing assembly is disposed on the light-sensing metal layer.

A transparent conducting layer is disposed on the light-sensing metal layer.

The light-sensing assembly comprises P-type semiconductor layer, an intrinsic semiconductor layer, and N-type semiconductor layer in order on the light-sensing metal layer.

A light-sensing metal layer is disposed on an extended portion of the etching barrier layer and the light-sensing assembly is disposed on the light-sensing metal layer.

The light-sensing metal layer, the source electrode layer, and the drain electrode layer are in the same layer.

The present disclosure further comprises a manufacturing method for a display panel, where the manufacturing method, comprising:

providing a substrate;

forming a switch assembly on the substrate; the switch assembly comprises an indium gallium zinc oxide (IGZO) layer; and

forming a light-sensing assembly on a side of the switch assembly.

Furthermore, the step for forming the switch assembly comprising:

providing a glass substrate as the substrate;

forming a gate electrode metal layer, a gate insulation layer, the IGZO layer, an etching barrier layer, a source electrode layer, and a drain electrode layer on the substrate in sequence to form the switch assembly; the source electrode layer and the drain electrode layer are in a same layer.

Furthermore, the step for forming the switch assembly comprising the IGZO layer on the substrate, comprising:

forming an etching barrier layer on the IGZO layer:

the step for forming a light-sensing assembly on a side of the switch assembly, comprising: forming the light-sensing assembly on an extended portion of the etching barrier layer.

Furthermore, the step for forming the light-sensing assembly on the extended portion of the etching barrier layer, comprising:

forming a light-sensing metal layer on the extended portion of the etching barrier layer;

forming the light-sensing assembly on the light-sensing metal layer; and

forming a transparent conducting layer on the light-sensing assembly.

Furthermore, the step for forming the light-sensing assembly, comprising:

forming a P-type semiconductor layer on the light-sensing metal layer:

forming an intrinsic semiconductor layer on the P-type semiconductor layer; and

forming an N-type semiconductor layer on the intrinsic semiconductor layer.

Furthermore, a passivation layer covers the switch assembly and the light-sensing assembly.

Furthermore, a transparent conducting layer is disposed on the passivation layer corresponding to the switch assembly, and a transparent conducting layer is disposed on the passivation layer corresponding to the light-sensing assembly.

Furthermore, a light-sensing metal layer is disposed on the extended portion of the etching barrier layer and the light-sensing assembly is disposed on the light-sensing metal layer.

The light-sensing metal layer, the source electrode layer, and the drain electrode layer are in the same layer.

The light-sensing assembly is proportionally disposed on the side of the switch assembly of the display panel in the display panel of the present disclosure, such as one-to-one or multiple-to-one. Thus, an external environment of a display area of the display panel, particularly to external light intensity, can be perceived by the light sensing assembly. Therefore, when the light intensity is strong, the display panel can automatically be adjusted to increase brightness and enhance contrast ratio, which avoids that the display image too dark to see. When the light intensity is weak, the display panel can automatically be adjusted to decrease brightness and reduce contrast ratio, which avoids that the display image too light to hurt eyes, which improves sensory experience. In addition, the switch assembly is made of IGZO, power consumption of the display screen is approximate to the power consumption of the OLED using the IGZO technology, cost is lower, thickness of the display screen is only 25% greater than thickness of the OLED, and resolution of the display screen can reach level degree as full high-definition or even ultra-definition (resolution 4 k*2 k). The IGZO is an amorphous oxide containing indium, gallium, and zinc. Carrier mobility of the amorphous oxide is 20-30 times of carrier mobility of amorphous silicon, which greatly improves charge and discharge rate of the TFT to the pixel electrode, improves response speed of the pixel, achieves faster refresh rate, and improves line scanning speed rate of the pixel because of faster response speed, further making the TFT-LCD have ultrahigh resolution. In addition, as a number of transistors reduce and light transmittance of each pixel is improved, an IGZO display apparatus has higher energy efficiency level and higher efficiency. Furthermore, the IGZO can be produced using existing amorphous silicon production line, which is only slightly changed, therefore, compared with cost of the low-temperature polycrystalline silicon, the IGZO is more competitive in cost.

