TECHNICAL FIELD

The present invention relates to a substrate processing apparatus which performs a processing process, including a deposition process, an etching process, and the like, on a substrate.

BACKGROUND ART

Generally, a thin-film layer, a thin-film circuit pattern, or an optical pattern should be formed on a substrate for manufacturing a solar cell, a semiconductor device, a flat panel display device, etc. To this end, a processing process is performed on a substrate, and examples of the processing process include a thin film deposition process of depositing a thin film including a specific material on a substrate, a photo process of selectively exposing a portion of a thin film by using a photosensitive material, an etching process of removing the selectively exposed portion of the thin film to form a pattern, etc. The processing process is performed on a substrate by a substrate processing apparatus.

FIG. 1is a side cross-sectional view schematically illustrating a portion of a related art substrate processing apparatus.

Referring toFIG. 1, a chamber11providing a space which a substrate S is loaded into and processed in, a disk12which a plurality of substrates S are mounted on and supported by, and a distribution unit (not shown) distributing a gas toward the disk12are installed in a related art substrate processing apparatus10. The disk12is installed in the chamber11. The distribution unit distributes the gas to the substrate S, and thus, a processing process is performed on the substrate S supported by the disk12.

Here, in the related art substrate processing apparatus10, an upper surface S1of the substrate S is disposed on the same plane as an upper surface121of the disk12. That is, the upper surface S1of the substrate S and the upper surface121of the disk12are disposed at the same height. Therefore, in the related art substrate processing apparatus10, a gas is not smoothly exhausted through a space between the disk12and the chamber11, causing the degradation in quality of a thin film which has undergone a processing process including a deposition process, an etching process, and the like.

DISCLOSURE

Technical Problem

To accomplish the above-described objects, the present invention may include below-described elements.

A substrate supporting device according to the present invention, a substrate supporting device of a substrate processing apparatus, may include: a disk; and a plurality of substrate supporting parts disposed radially from a center of the disk, a substrate being supported by each of the plurality of substrate supporting parts. An upper surface of each of the plurality of substrate supporting parts may protrude more upward than an upper surface of the disk.

A substrate processing apparatus according to the present invention may include: a chamber; a gas distribution unit supplying a processing gas to an inner portion of the chamber; and a substrate supporting device, a plurality of substrates being supported by the substrate supporting device. The substrate supporting device may include a disk and a plurality of substrate supporting parts disposed radially from a center of the disk. An upper surface of each of the plurality of substrate supporting parts may protrude more upward than an upper surface of the disk.

Technical Solution

The present invention is devised to solve the above-described problems and is for providing a substrate supporting device and a substrate processing apparatus, which can smoothly exhaust a gas supplied to the inside of a chamber.

Advantageous Effect

According to the present invention, the following effects can be obtained.

The present invention is implemented to smoothly exhaust a processing gas, and thus, can decrease the amount of a processing gas which remains after being used for a processing process performed on a substrate, thereby enhancing the quality of a thin film which has undergone a processing process including a deposition process, an etching process, and the like.

