CROSS-REFERENCE TO RELATED APPLICATION

This application claims priority to Korean Patent Application No. 10-2019-0081791 filed on Jul. 8, 2019 in the Korean Intellectual Property Office, the disclosure of which is incorporated herein by reference in its entirety.

BACKGROUND

1. Field

Example embodiments of the present disclosure relates to a manufacturing method of a semiconductor light emitting device.

2. Description of the Related Art

A light emitting diode is a semiconductor light emitting device in which a material included in a device emits light using electrical energy. The light emitting diode converts energy generated by recombination of electrons and holes of the bonded semiconductor into light and emits the light. Such light emitting diodes are widely used in lighting, display devices, and light sources, and light sources, and their development is being accelerated.

With the recent commercialization of mobile phone keypads, turn signal lamps, and camera flashes using gallium nitride (GaN)-based light-emitting diodes, which have been actively developed and used, general lighting using semiconductor light emitting devices has been active developed. Similar to backlight units of large TVs, automotive lamps, and general lighting, applications of semiconductor light emitting devices are gradually increasing in size, high output, and high efficiency and the applications thereof have gradually been widened.

Accordingly, there is a need for a method for reducing manufacturing costs of a semiconductor light emitting device.

SUMMARY

One or more example embodiments provide a method for reducing manufacturing costs of a semiconductor light emitting device.

According to an aspect of an example embodiment, there is provided a manufacturing method of a semiconductor light emitting device, the manufacturing method including forming a plurality of light emitting cells that are individually separated on a first substrate, forming a first planarization layer by providing an insulating material on the plurality of light emitting cells, a thickness of the first planarization layer being greater than a thickness of the plurality of light emitting cells, forming a second planarization layer by providing a photoresist on the first planarization layer to have a flat upper surface, and soft baking the photoresist, and dry etching the second planarization layer to a predetermined depth to expose a portion of the first planarization layer provided on the plurality of light emitting cells, and a portion of the second planarization layer remaining between the plurality of light emitting cells on the first planarization layer, wherein the forming the second planarization layer and the dry etching are repeated at least once to remove the portion of the second planarization layer provided between the plurality of light emitting cells.

According to another aspect of an example embodiment, there is provided a manufacturing method of a semiconductor light emitting device, the manufacturing method including forming a semiconductor laminate by sequentially stacking a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer on a growth substrate, forming a plurality of light emitting cells on a mesa region partitioned by a separation space that is formed by etching a portion of the semiconductor laminate to expose the growth substrate, the plurality of light emitting cells including a plurality of light emitting structures that share the first conductivity-type semiconductor layer, and in which the active layer and the second conductivity-type semiconductor layer are separately provided, forming a first planarization layer by providing an insulating material on the plurality of light emitting cells and the separation space, a thickness of the first planarization layer being greater than a thickness of the semiconductor laminate, forming a second planarization layer on the first planarization layer by providing a photoresist on the first planarization layer and soft baking the photoresist, and dry etching the second planarization layer to a predetermined depth from an upper surface direction of the second planarization layer to expose a portion of the first planarization layer overlapping the mesa region, and a portion of the second planarization layer provided between the plurality of light emitting cells remaining on the first planarization layer, wherein the forming the second planarization layer and the dry etching are repeated at least once to remove the portion of the second planarization layer provided between the plurality of light emitting cells.

According to another aspect of an example embodiment, there is provided a manufacturing method of a semiconductor light emitting device, the manufacturing method including forming a plurality of light emitting cells respectively including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer that are sequentially stacked on a growth substrate, and partitioned by a separation space in which the growth substrate is exposed, forming a first planarization layer including an upper surface that is higher than an upper surface of the second conductivity-type semiconductor layer by depositing an insulating material on the plurality of light emitting cells and the separation space, forming a second planarization layer by providing a photoresist on the first planarization layer and soft baking the photoresist, and dry etching the second planarization layer to a predetermined depth from an upper surface direction of the second planarization layer to expose a portion of the second planarization layer overlapping the plurality of light emitting cells of the first planarization layer, and a portion of the second planarization layer provided between the plurality of light emitting cells remaining on the first planarization layer, wherein the forming the second planarization layer and the dry etching are repeated at least once to remove the portion of the second planarization layer positioned between the plurality of light emitting cells

