The present application is based on, and claims priority from JP Application Serial Number 2019-060163, filed Mar. 27, 2019, the disclosure of which is hereby incorporated by reference herein in its entirety.

BACKGROUND

1. Technical Field

The present disclosure relates to a temperature sensor, a circuit device, an oscillator, an electronic apparatus, and a vehicle.

2. Related Art

A forward voltage has temperature characteristics in a PN junction of a semiconductor, and a temperature sensor using the temperature characteristics is known. As the forward voltage having the temperature characteristics, for example, a voltage between the base and emitter of a bipolar transistor or the like is used.

A temperature sensor in JP-A-2009-92449 includes a bipolar transistor, a first resistor, and a second resistor coupled in series. Abase node of the bipolar transistor and a node between the first resistor and the second resistor are coupled, and a temperature detection voltage is output from a collector node of the bipolar transistor. JP-A-2009-92449 discloses a configuration in which a sensitivity correction of the temperature detection voltage is performed by changing a current passed through the bipolar transistor. The sensitivity is a slope of the temperature detection voltage with respect to the temperature change.

In the temperature sensor as described above, it is desired that an offset of the temperature detection voltage can be corrected with high accuracy with a simple circuit configuration. JP-A-2009-92449 describes the sensitivity correction of the temperature detection voltage but does not describe the offset correction of the temperature detection voltage.

SUMMARY

An aspect of the present disclosure relates to a temperature sensor for outputting a temperature detection voltage, including: a first bipolar transistor; a first resistor provided between a first node coupled to a first base node that is a base node of the first bipolar transistor and a first collector node that is a collector node of the first bipolar transistor; and a first variable resistance circuit provided between a first emitter node that is an emitter node of the first bipolar transistor and a ground node.

