CROSS-REFERENCE TO RELATED APPLICATION

Korean Patent Application No. 10-2019-0068801, filed on Jun. 11, 2019, in the Korean Intellectual Property Office, and entitled: “Integrated Circuit Device and Method of Manufacturing the Same,” is incorporated by reference herein in its entirety.

BACKGROUND

1. Field

Embodiments relate to an integrated circuit device and a method of manufacturing the same.

2. Description of the Related Art

As an integrated circuit device is down-scaled, a space occupied by a capacitor may be reduced.

SUMMARY

Embodiments are directed to an integrated circuit device, including a lower electrode including a niobium (Nb)-containing layer doped with titanium (Ti), a dielectric layer on the lower electrode, and an upper electrode that covers the dielectric layer.

Embodiments are also directed to an integrated circuit device, including a substrate including an active region, a conductive region on the active region, and a capacitor on the conductive region, the capacitor including a lower electrode including a Nb containing layer doped with Ti, a dielectric layer formed on the lower electrode, and an upper electrode that covers the dielectric layer.

Embodiments are also directed to an integrated circuit device, including a substrate including an active region, a conductive formed on the active region, and a capacitor on the conductive region, the capacitor including a lower electrode including at least one selected from a Nb nitride layer doped with Ti, a Nb oxide layer doped with Ti, and a Nb oxynitride layer doped with Ti, a dielectric layer on the lower electrode and including a metal oxide layer, and an upper electrode that covers the dielectric layer.

Embodiments are also directed to a method of manufacturing an integrated circuit device, the method including forming a lower electrode including a Nb containing layer doped with Ti on a substrate, forming a dielectric layer on the lower electrode, and forming an upper electrode on the dielectric layer.

