PRIORITY INFORMATION

This application is a National Stage Application under 35 U.S.C. § 371 of International Application Number PCT/IB2019/000474, filed on May 31, 2019, the contents of which are incorporated herein by reference.

TECHNICAL FIELD

The present disclosure generally relates to memory devices, and more particularly relates to embodiments relating to safety and improved performances of data reading and programming in non-volatile memory device.

Embodiments of the present disclosure relates more specifically to a method to retrim the setting of a memory component to improve the cross temp robustness of the memory device.

BACKGROUND

Memory devices are well known in the electronic field to store and allow accessing to digital information. In general, different kind of semiconductor memory devices may be incorporated into more complex systems including either non-volatile memory components as well as volatile memory components, for instance in so-called System-on-Chips (SoC) wherein the above-mentioned memory components are embedded.

Nowadays, however, the need of Real Time Operative Systems, in particular for automotive applications requires SoC with more and more increased performances and efficiency and the known solutions partially satisfy these requirements but not at cost and yield effective.

Non-volatile memory can provide persistent data by retaining stored data when not powered and can include NAND flash memory, NOR flash memory, 3DXP memories, MRAMs, STTRAM and CBRAMs, among others. NAND flash has reduced erase and write times, and requires less chip area per cell, thus allowing greater storage density and lower cost per bit than NOR flash. However, the I/O interface of NAND flash does not provide a random-access external address bus. Rather, data must be read on a block-wise basis, with typical block sizes of hundreds to thousands of bits.

Flash memory devices suffer temperature variation, in particular the increase of the temperature during their functioning. The reason is mainly due to the fact that when the floating gates forming the memory is biased in presence of a higher temperature may reach an energy level sufficient to allow a jump into the channel and the consequence is a charge lost. In other technologies using for instance charge traps, the high temperature accelerates the recombination and this means losing the stored info. These problems affect the safety and correctness of the data read from the memory device.

An aim of the present disclosure is that of providing a Flash memory device and a reading method for Flash memory devices reducing the impact of age and temperature on the performances of the memory device thus reducing the risk to lose information.

