CROSS-REFERENCE TO RELATED APPLICATION

This application claims the benefit of Korean Patent Application No. 10-2016-0170410, filed on Dec. 14, 2016, in the Korean Intellectual Property Office, the disclosure of which is incorporated herein in its entirety by reference.

BACKGROUND

1. Field

One or more embodiments relate to a substrate processing apparatus, and more particularly, to a substrate deposition apparatus capable of preventing generation of parasitic plasma.

2. Description of the Related Art

In a process of manufacturing a semiconductor device, as a circuit line width decreases, more precise process control has been required. In a film deposition process that is one of important semiconductor processes, various efforts to achieve high film uniformity have been made.

One of major factors for uniform film deposition is a gas supply unit. A showerhead method is employed for a common gas supply unit. The showerhead method has a merit of uniformly supplying a gas onto a substrate in a coaxial shape.

Plasma is used to secure a relatively fast response speed. The plasma needs to be generated uniformly in a reaction space. When the plasma is generated in an unnecessary space, a defect may occur in an apparatus. Furthermore, when the plasma is not uniformly distributed on a substrate, the quality of a film may be deteriorated.

SUMMARY

One or more embodiments include a substrate deposition apparatus which may prevent generation of parasitic plasma.

One or more embodiments include a substrate processing apparatus which may prevent leakage of plasma power.

Additional aspects will be set forth in part in the description which follows and, in part, will be apparent from the description, or may be learned by practice of the presented embodiments.

According to one or more embodiments, a substrate processing apparatus includes a partition comprising at least one through-hole, a conduit arranged in the partition through the through-hole, a gas supply unit connected to the conduit, and a low dielectric material provided between a side wall of the through-hole and the conduit.

The low dielectric material may include air.

At least one path for connecting the air and outside may be formed in the substrate processing apparatus.

The path may be formed between the partition and the conduit.

The path may be formed in the partition.

The partition may include a protruding portion protruding toward the gas supply unit, and the low dielectric material may contact one side surface of the protruding portion.

The partition may include a step portion located in an area where the through-hole is formed, the conduit may include a flange, and the conduit may be connected to the partition through a coupling between the flange and the step portion.

A path communicated with outside air may be formed between the step portion and the flange.

The substrate processing apparatus may further include an insulating plate arranged between the partition and the gas supply unit.

The substrate processing apparatus may further include a radio frequency (RF) rod connected to the gas supply unit by penetrating through at least part of the partition and the insulating plate.

The through-hole may have a first diameter in a first region and a second diameter greater than the first diameter in a lower portion of the first region.

A diameter of at least part of the through-hole may continuously increase toward the gas supply unit.

A side section profile of at least part of the through-hole may have a bell-like shape.

According to one or more embodiments, a substrate processing apparatus includes a partition including at least one through-hole, an insulating conduit arranged in the partition through the through-hole, a gas supply unit connected to the insulating conduit, an insulating plate arranged between the partition and the gas supply unit, and a radio frequency (RF) rod connected to the gas supply unit by penetrating through the insulating plate, wherein the partition includes at least one of first protruding portion contacting the insulating plate, and at least one of second protruding portion contacting the insulating plate and arranged between the first protruding portion and the insulating conduit, the RF rod is arranged between the first protruding portion and the second protruding portion, and an air-filled-space is formed between the partition and the insulating plate, between a side wall of the through-hole and the insulating conduit, and between the first protruding portion and the second protruding portion.

The second protruding portion may be continuously formed around the insulating conduit. The second protruding portion may further include a path. The path may be formed to connect a space between the first partition and the second partition and a space between the second partition and the insulating conduit. Alternatively, the second protruding portion may be discontinuously formed around the insulating conduit.

According to one or more embodiments, a substrate processing apparatus includes a partition providing a gas supply channel, a gas supply unit connected to the gas supply channel, and air between the partition and the gas supply unit, wherein the partition includes at least one first protruding portion protruding toward the gas supply unit, and the air contacts one side surface of the first protruding portion.

The first protruding portion may be arranged in an area overlapping the gas supply unit.

At least part of the first protruding portion may be arranged in an area that does not overlap the gas supply unit.

The partition may further include at least one second protruding portion protruding toward the gas supply unit and arranged between the first protruding portion and the gas supply channel, and the air may be provided between the first protruding portion and the second protruding portion and between the gas supply channel and the second protruding portion.

The substrate processing apparatus may further include a radio frequency (RF) rod connected to the gas supply unit and arranged between the first protruding portion and the second protruding portion.

The substrate processing apparatus may further include moisture absorbing member arranged to contact the air.

The second protruding portion may be continuously formed around the gas supply channel. For example, the second protruding portion may further include a path. The path may be formed to connect a space between the first partition and the second partition and a space between the second partition and the gas supply channel. Alternatively, the second protruding portion may be discontinuously formed around the gas supply channel.

