OUR PUBLICATIONS

The “European Law and Politics Journal” (ELP Journal)is a peer reviewed

journal which accepts high quality research articles.

ELP Journal is available to all researchers who are interested in publishing their scientific achievements in the fields of legal and political sciences. We welcome submissions focusing on theories, methods and applications in both articles and book reviews.

All articles must be in English.

Regular publications of the ELP Journal are uploaded on our website.

Moreover, the European Scientific Institute, the publisher of the ELP Journal mails printed copies of the journal to the authors of the papers.also contains N-type source and drain regions 13 and 15, respectively. A gate oxide (not shown) is disposed on the surfaces of the silicon island 12 under at least the gate electrode 20. The device 10 actually consists of three transistors in parallel. The first transistor is on the top surface 16 of the silicon island 12. Two transistors are also formed along the opposed sidewalls 18 of the silicon island 12. The opposed sidewalls 18 lie under the gate electrode 20 and extend along the channel length of the SOS device. The transistors formed along the opposed sidewalls 18 are commonly referred to as parasitic edge transistors.
The parasitic edge transistors have a lower threshold voltage than the top transistor. The parasitic edge transistors are also strongly susceptible