United States, its Possessions, and Insular Areas

Codeset_Source: American National Standards Institute

Attribute:

Attribute_Label: ELEV_METER

Attribute_Definition: The elevation of the feature in meters relative to sea level.

Attribute_Definition_Source: United States Geological Survey

Attribute_Domain_Values:

Unrepresentable_Domain: Numbers for the features.

Distribution_Information:

Distributor:

Contact_Information:

Contact_Organization_Primary:

Contact_Organization: Esri; Esri Offices

Contact_Address:

Address_Type: mailing and physical address

Address: 380 New York Street

City: Redlands

State_or_Province: California

Postal_Code: 92373-8100

Country: USA

Contact_Voice_Telephone: 800-447-9778

Contact_Instructions:

In the United States, contact the Esri Telebusiness staff at 800-447-9778 for more information about our software and data.
Outside the United States, please direct all inquiries to your local Esri Office. This information can be found at <http://www.esri.com/about-esri/locations.html>.

Resource_Description: Offline Data, Downloadable Data

Distribution_Liability: See use constraints.

Standard_Order_Process:

Digital_Form:

Digital_Transfer_Information:

Format_Name: SDC

Format_Specification:

The SDC file contains the geospatial and attribute data. The SDI file contains the spatial index. The PRJ file contains the coordinate system information (optional). The XML file (*.sdc.xml) contains the metadata describing the data set (optional).oxidized by the oxygen in the atmospheric air and contaminant materials from atmospheric air adsorb to the surface resulting in an oxidized and contaminated surface.
This problem can be solved at least partly by undertaking the method as mentioned above. Dissolving the oxidized surface film by the hydrofluoric acid and at the same time terminating the surface silicon bonds by the hydrogen atoms, the silicon surface becomes resistive against oxidation and the adsorption of the contaminants even in atmospheric condition because of the extremely strong bonding between the silicon and the hydrogen atoms.
However there are two problems about the conventional treatment method by using a hydrofluoric acid solution. First, the (001) surface of the silicon is subject to etching by the hydroxyl ions contained in the hydrofluoric acid solution.