dielectric film and insulated from one another by a second air gap.
The present invention also provides a method for fabricating a semiconductor device comprising the steps of:
iterating a plurality of times the steps of forming a first interlevel dielectric film overlying a semiconductor substrate, and forming interconnects, disposed within a carbon film, on the first interlevel dielectric film, a top surface of the carbon film being substantially flush with a top surface of the interconnects;
forming a second interlevel dielectric film on top the interconnect and top the first carbon film;
forming a bore in the second interlevel dielectric film having a bottom reaching a top surface of one of the carbon films; and removing at least the one of carbon films through the bore to form an air gapbetween corresponding the interconnects.
The present invention provides another method for fabricating a semiconductor device comprising:
iterating a plurality of times the steps of forming a first interlevel dielectric film overlying a semiconductor substrate, forming interconnects on the interlevel dielectric film, selectively etching the first interlevel dielectric film by using the interconnects as a mask, embedding the interconnects with a carbon film having a top surf ace which is flush with a top surface of the interconnects;
forming a second interlevel dielectric film on top the interconnects and top the carbon film;
forming a bore in the second interlevel dielectric film having a bottom reaching a top surface of the top carbon film; and removing the carbon films through the bore to form an air gap between the interconnects.
In accordance the with