bonded to a conductive support substrate through a first insulating film, a separation trench which separates a device formation region where at least a desired element is formed, from a region of the semiconductor substrate, a separation trench, and a substrate contact region where the semiconductor substrate is not present. The semiconductor device further includes a second insulating film which fills the separation trench and covers a surface of the substrate contact region, an external connection electrode formed above the semiconductor substrate, and a support substrate connecting section which passes through the first insulating film and the second insulating film in the substrate contact region to connect the external connection electrode and the support substrate.
Here, the external connection electrode may be formed through a third insulating film onthe semiconductor substrate. In this case, the third insulating film may be identical to the second insulating film.
Also, the support substrate connecting section may include a conductive film which is connected with the external connection electrode and covers the second insulating film, and a contact section which passes through the first insulating film and the second insulating film to the support substrate in the substrate contact region. In this case, the conductive film desirably contains a metal film having aluminum as main material.
Also, the contact section may be formed of a single contact. In this case, the single contact may include a refractory metal film formed on side wall of a contact hole for the contact, and the conductive film filling the contact hole in which the refractory