of manufacturing a semiconductor device, including a laminating step including forming tunnel insulating films, floating gates, dielectric films and control gates on first and second cell areas, the first and second cell areas being formed mutually adjacent to each other on a semiconductor substrate. A plurality of impurity area formation steps are carried out for forming sources and drains on the first and second cell areas. The method also includes forming an electric connection between one of the source and drain of the first cell area and one of the source and drain of the second cell area. The electrical connection may flow through a connecting area formed to have a lower electric resistance than impurity areas formed in one of the plurality of impurity area formation steps.
Otherin history.

In category after category — except for reducing numbers of old requests and a slight increase in how often it waived copying fees — the government's efforts to be more open about its activities last year were their worst since President Barack Obama took office.

In a year of intense public interest over the National Security Agency's surveillance programs, the government cited national security to withhold information a record 8,496 times — a 57 percent increase over a year earlier and more than double Obama's first year, when it cited that reason 3,658 times. The Defense Department, including the NSA, and the CIA accounted for nearly all those. The Agriculture Department's Farm Service Agency cited national security six times, the Environmental Protection Agency did twice and the National