the foregoing and other objects in view there is provided, in accordance with the invention, a half-bridge circuit including a first semiconductor body having a first MOS transistor that is integrated in the first semiconductor body. The first MOS transistor is a vertically designed n-conducting MOS transistor. The half-bridge circuit includes a second semiconductor body having a second MOS transistor that is integrated in the second semiconductor body. The second MOS transistor is a vertically designed p-conducting MOS transistor. The half-bridge circuit also includes: a drive circuit for driving the first MOS transistor and the second MOS transistor; a common connection plate to which the first MOS transistor and the second MOS transistor are applied; and a first connection terminal and a second connection terminal. The first MOStransistor and the second MOS transistor are connected in series between the first connection terminal and the second connection terminal.
In accordance with an added feature of the invention, the first semiconductor body has a front side and a rear side; the first MOS transistor has a drive connection and a first load path connection that are accessible at the front side of the first semiconductor body; the first MOS transistor has a second load path connection that is accessible at the rear side of the first semiconductor body; the second semiconductor body has a front side and a rear side; the second MOS transistor has a drive connection and a first load path connection that are accessible at the front side of the second semiconductor body; and the