and quick rewriting, the tunnel oxide film has to be thin. On the other hand, for the sake of electric charge holding, the tunnel oxide film has to be thick in order to reduce the leak current. Thus the tunnel oxide film of the memory MOS FET is required to have conflicting properties and very quality insulating film is needed for the tunnel oxide film.
The insulating film can be formed by deposition using CVD apparatus, or by thermal oxidization or other methods. Thermal oxidization can provide a good quality insulating film that has only few defects in the active layer-thermal oxide film interface in addition to other merits. Accordingly, a thermal oxide film is desirably used as the tunnel oxide film.
However, in a normal TFT manufacturing process, anand tranquility to the restive Middle East region.

The senior Saudi Shia cleric is accused of delivering anti-government speeches and defending political prisoners.

Nimr was attacked and arrested in the Qatif region in July 2012. His arrest sparked widespread protests in Saudi Arabia, leaving several people dead.

There have been numerous demonstrations in the kingdom’s oil-rich Eastern Province since 2011, with the protestors calling for political reform and an end to what they call widespread discrimination. Several people have been killed and many others injured or arrested during the demonstrations.

The Persian Gulf monarchy has come under fire from international human rights organizations, which have criticized it for failing to address the rights situation in the kingdom. Critics say the country shows zero-tolerance toward dissent.