While attending Stanford, Perlegos interviewed at Intel Corporation.
At this time Intel had a new project to develop nonvolatile memory technologies and a new semiconductor chip.
After learning about the opportunities to work on these new technologies during the interview, he left AMI for Intel in 1974.
While at Intel, he became an expert in semiconductor device physics, circuit design, and semiconductor fabrication processes.
His first task, to design and develop an N-channel EPROM different from its predecessor the P-channel EPROM, that would work with the microprocessors Intel was developing at the time.
The project known as the 2708, was introduced by Intel in 1975.
His invention of the N-channel EPROM was important, as it was the first time a positive voltage and channel injection was used for a nonvolatile memory device, thus requiring significantly lower voltage than its P-channel predecessor.
The 2708 was a revolutionary chip, particularly for use with microprocessors.
In 1978, Perlegos designed and developed the Intel 2816, an Electrically Erasable PROM (EEPROM) that eliminated the lengthy UV exposure cycle using tunneling to both program and erase the memory.
While attending Stanford, Perlegos interviewed at Intel Corporation. At this time Intel had a new project to develop nonvolatile memory technologies and a new semiconductor chip. After learning about the opportunities to work on these new technologies during the interview, he left AMI for Intel in 1974. While at Intel, he became an expert in semiconductor device physics, circuit design, and semiconductor fabrication processes. His first task, to design and develop an N-channel EPROM different from its predecessor the P-channel EPROM, that would work with the microprocessors Intel was developing at the time. The project known as the 2708, was introduced by Intel in 1975. His invention of the N-channel EPROM was important, as it was the first time a positive voltage and channel injection was used for a nonvolatile memory device, thus requiring significantly lower voltage than its P-channel predecessor. The 2708 was a revolutionary chip, particularly for use with microprocessors. In 1978, Perlegos designed and developed the Intel 2816, an Electrically Erasable PROM (EEPROM) that eliminated the lengthy UV exposure cycle using tunneling to both program and erase the memory.
George Perlegos