Decades later, advances in multi-gate technology enabled the scaling of metal–oxide–semiconductor field-effect transistor (MOSFET) devices down to nano-scale levels smaller than 20 nm gate length, starting with the FinFET (fin field-effect transistor), a three-dimensional, non-planar, double-gate MOSFET.
Timirwen n iwityan darat awa iki tan s data daɣ albaban ajjotnen n teknoloji ikfan turhajat n eket n isuj n metal-oxide-semiconductor field-effect transistor (MOSFET) s ihandagan n nano-scale ojjar nen tamadrit 20 n aɣil daɣ tichijrit santinen s Fin FET (fin field-effect transistor), MOSFET ilan tiɣimmar karadat war amos polar n issin albaban.