Process Options Impact on ESD Diode Performance in Bulk FinFET Technology
Bulk FinFET is the main technology option for sub 20 nm CMOS nodes. However, newly introduced process options in advanced bulk FinFET technologies can result in significant deterioration of intrinsic electrostatic discharge (ESD) performance. In this paper, the impact on ESD performance induced by the process options beyond 20 nm nodes is explored on the ESD protection diodes.
IEEE Transactions on Electron Devices