Trilayer Tunnel Selectors for Memristor Memory Cells
An integrated memory cell with a memristor and a trilayer crested barrier selector, showing repeatable nonlinear current voltage switching loops is presented. The fully atomic layer deposited TaN1+x/Ta2O5/TaN1+x crested barrier selector yields a large nonlinearity >104) high endurance >108) low variability, and low temperature dependence.
Advanced materials