SiGe BiCMOS based technology platforms for mm wave and radar applications
In this work different SiGe BiCMOS based technology platforms for mm wave and radar applications are presented. Based on the evolution of IHP BiCMOS technologies the performance improvement for SiGe heterojunction bipolar transistor (HBT) in the past decades in comparison to scaled RF CMOS technologies is shown. We depict that an increase of the processing effort of only 35% deliver a SiGe HBT device performance improvement of >170% compared to IHPs first high speed HBT generation. Moreover the co integration of new modules with the SiGe BiCMOS baseline technology is reviewed. The monolithic integration of an additional RF MEMS switch module is shown and we discuss different packaging approaches for the integrated device. Furthermore a SiGe BiCMOS/InP bipolar heterogeneous integration platform is presented. All shown technologies had proven their usefulness for radar applications and different examples from F band up to the 240 GHz range are reviewed.
2016 21st International Conference on Microwave, Radar and Wireless Communications (MIKON)