Defect free GeSn alloy strips on Si by Sn self catalyzed MBE method
The lateral growth of GeSn strips on Si(111) has been successfully achieved by Sn self catalyzed MBE method. The effect of Sn catalysts on morphology and the quality of the materials were studied. The high quality GeSn on Si will contribute to development of Si based optoelectronics.
2016 IEEE 13th International Conference on Group IV Photonics (GFP)