Silicon Based GeSn p i n Photodetector for SWIR Detection
We reported an investigation of GeSn based p i n photodetectors (PDs) with a Ge0.92Sn0.08 active layer grown on n type Si (100) substrate using molecular beam epitaxy (MBE) The GeSn photodetector achieved a wide spectrum detection whose cutoff wavelength can reach to 2.3 mm. The PDs exhibited a high performance near 2.0 mm with a responsivity of 93 mA/W and a dark current of 171 mA under a reverse bias of 1 V at room temperature. This work represented a promising technology to develop Si based short wave infrared (SWIR) photodetectors.
IEEE Photonics Journal