DNA Origami Mask for Sub Ten Nanometer Lithography.
DNA nanotechnology is currently widely explored and especially shows promises for advanced lithography due to its ability to define nanometer scale features. We demonstrate a 9 x 14 nm(2) hole pattern transfer from DNA origami into an SiO2 layer with a sub 10 nm resolution using anhydrous HF vapor in a semiconductor etching machine. We show that the resulting SiO2 pattern inherits its shape from the DNA structure within a process time ranging from 30 to 60 s at an etching rate of 0.2 nm/s. At 600 s of etching, the SiO2 pattern meets corrosion and the overall etching reaction is blocked. These results, in addition to the entire surface coverage by magnesium occurring on the substrate at a density of 1.1 x 10(15) atom/cm(2) define a process window, fabrication rules, and limits for DNA based lithography.
ACS nano