Organic inorganic hybrid semiconductor thin films deposited using molecular atomic layer deposition (MALD)
Molecular atomic layer deposition (MALD) is employed to fabricate hydroquinone (HQ)/diethyl zinc (DEZ) organic inorganic hybrid semiconductor thin films with accurate thickness control, sharp interfaces, and low deposition temperature. Self limiting growth is observed for both HQ and DEZ precursors. The growth rate remains constant at approximately 2.8 A per cycle at 150 degC. The hybrid materials exhibit n type semiconducting behavior with a field effect mobility of approximately 5.7 cm2 V 1 s 1 and an on/off ratio of over 103 following post annealing at 200 degC in nitrogen. The resulting films are characterized using ellipsometry, Fourier transform infrared spectroscopy (FTIR) transmission electron microscopy (TEM) UV Vis spectroscopy, transistor behavior, and Hall effect measurements. Density functional theory (DFT) and many body perturbation theory within the GW approximation are also performed to assist the explanation and understanding of the experimental results. This research offers n channel materials as valuable candidates for efficient organic CMOS devices.