Low Power, Self Rectifying, and Forming Free Memristor with an Asymmetric Programing Voltage for a High Density Crossbar Application.
A Pt/NbOx/TiOy/NbOx/TiN stack integrated on a 30 nm contact via shows a programming current as low as 10 nA and 1 pA for the set and reset switching, respectively, and a self rectifying ratio as high as ~105, which are suitable characteristics for low power memristor applications. It also shows a forming free characteristic. A charge trap associated switching model is proposed to account for this self rectifying memrisive behavior. In addition, an asymmetric voltage scheme (AVS) to decrease the write power consumption by utilizing this self rectifying memristor is also described. When the device is used in a 1000 x 1000 crossbar array with the AVS, the programming power can be decreased to 8.0% of the power consumption of a conventional biasing scheme. If the AVS is combined with a nonlinear selector, a power consumption reduction to 0.31% of the reference value is possible.
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