Selective area growth of high density GaN nanowire arrays on Si(111)
Selective area growth of high density GaN nanowires on Si(111) substrate by plasma assisted molecular beam epitaxy is studied. AlN nanopedestals used as nanowires growth seeds are fabricated by nanoimprint lithography. GaN nanowires with hexagonal cross section show the best optical quality with a strong resonant emission at 3.457eV.
2016 IEEE Photonics Society Summer Topical Meeting Series (SUM)