MISSING FOURTH ELEMENT MEMRISTOR MODELING WITH NEW WINDOW FUNCTION DERIVED FROM SIGMOID LOGISTIC EQUATION
As a potential competition for the next generation memory technology, the newly found missing forth fundamental circuit element called memristor by HP labs in 2008 has drawn a great deal of interest. Among the emerging nanotechnologies possibilities, Memristor based technology provides much better scalability and higher packing density when used as a memory that enables the improvement of performance, power and cost of integrated circuits. Memristor behaves as a nonvolatile resistive memory and retains the information even though a power source is switched off. In this research paper, we propose a memristor model with new window function derived from sigmoid logistic equation that resolves the terminal state problem and the parameters in the proposed window function can be easily adjusted to model the different kind of memristors. The main advantages of the new window function contains less fitting parameter that should satisfy all of the memristor properties such as frequency dependent hysteresis behaviors, Hard switching effects and boundary assurance.