High frequency GaN HEMTs for RF MMIC applications
We provide an overview of key challenges and technical breakthroughs that led to development of highly scaled GaN HEMT's having ft 400 GHz and fmax 550 GHz and the corresponding IC process. These highly scaled GaN devices have 5 times higher breakdown voltage than transistors with similar high frequency RF power gain in other semiconductor systems (Si, SiGe, InP, GaAs) We also report performance of the first generation of MMIC power amplifiers (PAs) that utilize these highly scaled devices. The power added efficiency (PAE) of 59% measured at a frequency of 32 GHz, bias of 3 V and output power of 24.3 dBm of the first generation Ka band MMIC PAs that were built using these highly scaled GaN devices, represent a significant improvement in PAE over values reported for other semiconductor technologies at this frequency band as well as for Ka band MMICs built in lower frequency GaN nodes. Presented data suggest that highly scaled GaN transistors are excellent candidates for MMIC PAs for next generation 28 GHz, 39 GHz, and higher frequency 5G mobile bands, because they would greatly extend battery lifetime in mobile handsets, due to their superior PAE compared to competing semiconductor technologies.
2016 IEEE International Electron Devices Meeting (IEDM)