Memristive Behavior and Ideal Memristor of 1T Phase MoS2 Nanosheets.
Memristor, which had been predicted a long time ago (Chua, L. O. IEEE Trans. Circuit Theory 1971, 18, 507) was recently invented (Strukov, D. B. et al. Nature 2008, 453, 80) The introduction of a memristor is expected to open a new era for nonvolatile memory storage, neuromorphic computing, digital logic, and analog circuit. Furthermore, several breakthroughs were made for memristive phenomena and transistors with single layer MoS2 (Sangwan, V. K. et al. Nat. Nanotechnol. 2015, 10, 403. van der Zande, A. M. et al. Nat. Mater. 2013, 12, 554. Liu, H. et al. ACS Nano 2014, 8, 1031. Bessonov, A. A. et al. Nat. Mater. 2015, 14, 199. Yuan, J. et al. Nat. Nanotechnol. 2015, 10, 389) Herein, we demonstrate that 2H phase of bulk MoS2 possessed an ohmic feature, whereas 1T phase of exfoliated MoS2 nanosheets exhibited a unique memristive behavior due to voltage dependent resistance change. Furthermore, an ideal odd symmetric memristor with odd symmetric I V characteristics was successfully fabricated by the 1T phase MoS2 nanosheets via combining two asymmetric switches antiserially.
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