W Band MMIC PA With Ultrahigh Power Density in 100 nm AlGaN/GaN Technology
A three stage W band GaN monolithic microwave integrated circuit power amplifier (MMIC PA) is reported. Electron beam lithography has been employed to define a 100 nm T shaped gate on the AlGaN/GaN HEMT structure with ultrahigh aluminum content. The MMIC PA offers a peak small signal gain of 16.7 dB in the 90 97 GHz bandwidth. Moreover, it achieves a peak 1.66 W (32.2 dBm) output power at 93 GHz in a continuous wave mode, with an associated power added efficiency of 21% and an associated power gain of 13.7 dB. Most notably, the peak power density is 3.46 W/mm with a 480 mm wide output stage, which exceeds 3 W/mm in AlGaN/GaN HEMT at W band for the first time.
IEEE Transactions on Electron Devices