Thickness Dependence of the Quantum Anomalous Hall Effect in Magnetic Topological Insulator Films.
The evolution of the quantum anomalous Hall effect with the thickness of Cr doped (Bi,Sb)2 Te3 magnetic topological insulator films is studied, revealing how the effect is caused by the interplay of the surface states, band bending, and ferromagnetic exchange energy. Homogeneity in ferromagnetism is found to be the key to high temperature quantum anomalous Hall material.
Advanced materials