SEL Site Localization Using Masking and PEM Imaging Techniques: A Case Study on Xilinx 28nm 7 Series FPGAs
An unusual methodology for localizing sparse SEL susceptible sites was successfully used to isolate the die region and identify the sensitive subcircuit responsible for a low cross section, low current latchup susceptibility in Xilinx 28nm 7 Series FPGAs. Die masking and photoemission electron microscopy (PEM) imaging contributed to the identification of the circuitry responsible for the latchup susceptibility in 7 Series devices. These results point to a possible approach for using selected devices from this family in high reliability space applications.
2016 IEEE Radiation Effects Data Workshop (REDW)