True random number generator using current difference based on a fractional stochastic model in 40 nm embedded ReRAM
We have successfully developed a robust ReRAM true random number generator, using current difference, that does not require extra chip area. True random numbers are guaranteed by the current difference in the 1/fb noise generated by Brownian motion, as tested using a fractional SDE model and verified using 1/fb noise distribution. A highly reliable 40 nm ReRAM true random number generator circuit was designed and passed NIST SP800 22 randomness tests across all combinations of voltage (VDD 0.1 V) and temperature 40 to 125 degC) The random number throughput achieves 32 Mbps with a low power consumption of 0.04 nJ/bit.
2016 IEEE International Electron Devices Meeting (IEDM)