Bandgap and temperature dependence of Auger recombination in InAs/InAsSb type II superlattices
A time and temperature dependent differential transmission technique is used to study the bandgap dependence of Auger recombination in Ga free InAs/InAsSb type II superlattices (T2SLs) The bandgap energies are varied between 290 meV (4.3 mm) and 135 meV (9.2 mm) by engineering the layer thickness and alloy Sb concentration. A long wave infrared structure with 135 meV bandgap energy is found to have an Auger coefficient of 9 x 10 26 cm6/s at 77 K. The measured Auger coefficients increase with decreasing bandgap from approximately 3 x 10 27 cm6/s for mid wave infrared bandgaps to 2 x 10 25 cm6/s for long wave infrared bandgaps at 77 K. The measured T2SL Auger coefficients are compared to predicted Auger coefficients for HgCdTe.