Advanced physical modeling of SiOx resistive random access memories
We apply a three dimensional (3D) physical simulator, coupling self consistently stochastic kinetic Monte Carlo descriptions of ion and electron transport, to investigate switching in silicon rich silica (SiOx) redox based resistive random access memory (RRAM) devices. We explain the intrinsic nature of resistance switching of the SiOx layer, and demonstrate the impact of self heating effects and the initial vacancy distributions on switching. We also highlight the necessity of using 3D physical modelling to predict correctly the switching behavior. The simulation framework is useful for exploring the little known physics of SiOx RRAMs and RRAM devices in general. This proves useful in achieving efficient device and circuit designs, in terms of performance, variability and reliability.
2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)