Effects of hydrogen dilution on electron density in multi-hollow discharges with magnetic field for A-Si:H film deposition
We have measured dependence of electron density n<inf>e</inf> on hydrogen dilution ratio R= [H<inf>2</inf>]/([SiH<inf>4</inf>]+[H<inf>2</inf>]) in the multi-hollow discharges with or without magnetic fields to obtain information about the deposition rate enhancement due to hydrogen dilution and applying the magnetic fields. The R dependence of the n<inf>e</inf> did not correlate with that of the deposition rate. The n<inf>e</inf> exponentially decreases with a distance from the discharges z. The n<inf>e</inf> decreases faster for higher R. These complicated behaviors of n<inf>e</inf> may be explained by electron attachment to the clusters generated in the SiH<inf>4</inf>+H<inf>2</inf> discharges. For R=0, the n<inf>e</inf> was almost same value regardless with or without magnetic fields. For R=1, n<inf>e</inf> with magnetic fields was 1/10 of that without magnetic fields. We also found that, for R=0, ne drastically decreased with increasing the z, while for R=1, ne showed a gradual decrease with z. The effects of applying magnetic fields on the deposition are unclear but applying the magnetic fields may affect the electron energy distribution.
Highly Stable a-Si:H Films Deposited by Using Multi-Hollow Plasma Chemical Vapor Deposition
Hydrogenated amorphous silicon (a-Si:H) films of high stability against light exposure have been deposited by using a newly developed multi-hollow plasma chemical vapor deposition (CVD) method. Films deposited in the upstream region in the multi-hollow plasma CVD reactor are a-Si:H films without incorporating a-Si:H nano-particles (clusters), while those in the downstream region are a-Si:H films with incorporating clusters. A-Si:H films without clusters have a low initial defect density of 5 ×1015 cm-3 and keep the value even after 100 h exposure of intense light intensity of 240 mW/cm2, whereas a-Si:H films with clusters show a significant increase in defect density from its initial value of 5 ×1015 cm-3 to 2 ×1016 cm-3 after 100 h light exposure. These results indicate that suppression of clusters incorporated into films is the key to realizing highly stable a-Si:H films.
Analysis of a coaxial-to-waveguide adaptor including a discended probe and a tuning post
A field matching analysis of a coaxial-to-waveguide adaptor incorporating a disc-ended probe and a tuning post is presented. In this analysis, the tuning post is considered as a short-circuited second probe. A computer algorithm for calculating the input impedance of this structure is developed. This algorithm is used to investigate and improve the operation of a commercially available coaxial-to-waveguide adaptor. >