Dielectric Properties of Alkoxy-Derived BaTiO3 Films on LaNiO3/Pt/TiOx/Si(100)
BaTiO3 films with higher degrees of (100) orientation were deposited using both of the heterogeneous LaNiO3 nucleation layer and homogeneous BaTiO3 buffer layer. The microstructure and dielectric properties are characterized. The temperature dependence of the dielectric properties is additionally discussed. The alkoxy-derived 1-mum thick BaTiO3 had the unique microstructure and showed predominant (100) orientation. The film showed ferroelectric to paraelectric transition around at 105degC, and improved dielectric properties. The improvement is considered to be due to the simultaneous control of crystallographic and microstructural characteristics by using the double nucleation and buffer layers.
Preparation and Characterization of BaTiO3 Thick Films with Li2O-SiO2 Sintering Aid
The effect of adding a Li2SiO3 (LSO) sintering aid for low temperature fabrication of BaTiO3 (BT) thick films was investigated. LSO-added BT thick films were prepared by the screen printing method on Pt-coated ZrO2 substrates. Their sintering properties were significantly improved by the addition of LSO, and the relative density of the BT thick film fired in air at 1200°C was 96%. The secondary phase was not observed. The dielectric, ferroelectric, and piezoelectric properties of the LSO-added BT thick films were examined. A typical ferroelectric hysteresis loop was observed, and the remnant polarization (Pr) was 7.5 µC/cm2. The dielectric constant was 3200, and tan δ was 2.1%. The maximum piezoelectric constant d31 calculated from the displacement of the Pt/BT/Pt/ZrO2 monomorph cantilever was -140 pm/V, and d33 measured with an atomic force microscope was 320 pm/V.
Preparation and evaluation of LaNiO3 thin film electrode with chemical solution deposition
Abstract LaNiO 3 (LNO) thin films were prepared onto Si substrate by chemical solution deposition. The orientation of the LNO films was controlled by changing concentration of precursor solution. The resistivity of the resultant LNO films was 1.82 – 2.57×10 −3 Ωcm. The obtained 0.3 M-LNO film was flat surface, highly (100) orientation, and had a low resistivity of 1.85×10 −3 Ωcm. PbZr 0.53 Ti 0.47 O 3 was fabricated onto the resultant 0.3 M-LNO electrode, and the sample showed a good ferroelectric property.