The irradiation effect of DC-DC power converter under x-ray
The irradiation response of DC-DC power converter was studied using X-ray source with whole and local irradiation method. It was indicated that the irradiation response of the different part of circuit was represented different effect. The VDMOSFET of DC-DC power converter was tremendous irradiation affected, and PWM and Shottky diode was exiguous affected, and the trend of DC-DC power converter optical-coupler parameters affected by optical-coupler was reversely with other part of DC-DC circuits.
Total-dose and single-event effects in DC/DC converter control circuitry
Total-dose and single-event effects in the linear control circuitry of DC/DC power converters are examined. Catastrophic failure, induced by error-amplifier total-dose irradiation, is compared for two modes of operation. The use of a more robust restart mechanism to maintain the operation of the converter at a much higher dose level is presented. Single events result in missing pulses at the output of the control circuitry. Hybrid and integrated (SG1525A) pulse width modulators are evaluated to illustrate the missing-pulse results.
MOS device degradation due to total dose ionizing radiation in the natural space environment : a review
Abstract This paper presents a review for the non-specialist of MOS device degradation due to total dose ionizing radiation in the natural space environment. Interface and oxide charge introduced in MOS dielectrics during ionizing radiation exposure cause changes in a number of device electrical parameters. Observed effects include: shifts in MOSFET threshold voltage, reduction of channel mobility, loss of drive capability and increase of leakage currents. Complex trade-offs between the interface and oxide trapped charge can occur in the natural space environment where the total dose is accumulated at a very low dose-rate.