A planar transistor for the 32-nm node and beyond with an ultra-shallow junction fabricated using in-situ doped selective Si epitaxy
Shallower junctions must be formed to make transistors work for the 32-nm node. Many kinds of technologies, such as co-implantation, laser spike annealing (LSA), and flash lamp annealing, have been energetically studied to form ultra-shallow junctions. We focused on in-situ doped selective Si epitaxy, with which the short channel effect and the parasitic resistance can be made compatible. Using this epitaxy, ultra-shallow junctions (with effective junction depths (Xj,eff) under 9 nm@5E18) were formed, and 20-nm or shorter PMOS gate transistors were fabricated using the epitaxy
Scalable eSiGe S/D Technology with Less Layout Dependence for 45-nm Generation
We developed a less layout-dependent epitaxially grown SiGe (eSiGe) source/drain (S/D) technique for pFET. We found that the effective stressor region of eSiGe existed only near the channel and that the volume effect of eSiGe was small. On the basis of this mechanism, a new recess RIE and a new epitaxial growth technology were developed, so that the gate-pitch dependence, S/D length dependence and channel width dependence were extremely reduced. In addition, we succeeded in increasing the drive current by improving the eSiGe structure and the impurity profile. We also obtained a high drive current of 750 muA/mum at Vdd=1V, Ioff=100nA/mum
Microstructure of the solder-casting zone in bridges of dental gold alloys.
The composition and structure were studied in the cast and in the solder of bridges which had failed clinically. Both materials were gold alloys but with different contents of Pt, Ag and Zn. The metallographic investigation revealed defects mostly in the solder, situated in the subsurface layer. SEM studied of the fracture surface revealed large porosites and a structure of dense parallel lines--striations--, indicating that the material had failed from fatigue. The materials in the fractured bridges were identified by micro-probe measurements. It was stated that cast material and solder material used together, were of different composition.