Fabrication Of A-C:B/N-Si Solar Cells With Low Positive Bias By Custom-Made-CVD
Boron doped amorphous carbon (a-C:B) film fabricated on n-type silicon using waste palm oil precursor by low positive bias voltage is presented. The rectifying curve were found for all samples under dark measurement revealed that those samples were p-type semiconductor. The +30 V was found the optimized of the electronic properties with the open circuit voltage (VOC), current density (JSC), fill factor (FF) and efficiency (%) were approximately 0.259034 V, 1.299456 mA/cm 2 , 0.240011, and 0.080788 %, respectively. The conversion efficiency of a-C:B has been improved under the influenced of low positive bias.
Photoelectrical properties of pulsed laser deposited boron doped p-carbon/n-silicon and phosphorus doped n-carbon/p-silicon heterojunction solar cells
Abstract This paper reports on the successful deposition of boron doped p-type (p-C:B) and phosphorus doped n-type (n-C:P) semiconducting carbon films and fabrication of p-C:B on n-type silicon (Si) substrate (p-C:B/n-Si) and n-C:P/p-Si cells by pulsed laser deposition at room temperature using graphite target. The B and P powder were respectively mixed with graphite powder in range from 1% to 20% of B by weight in the targets (Bwt.%) and 1–10% of P by weight in the targets (Pwt.%), and compressed into pellet targets. The B and P atoms incorporated in the films were determined by X-ray photoelectron spectroscopy to be in the range of 0.2–1.75 and 0.22–1.77 atomic percentages, respectively. The cells performances have been given under illumination I – V rectifying curve (AM 1.5, 100 mW/cm 2 , 25 °C). The open circuit voltage ( V oc ) and short circuit current density ( J sc ) for p-C:B/n-Si are observed to vary from 230 to 250 mV and 1.5 to 2.2 mA/cm 2 , respectively. While, for n-C:P/p-Si cells the V oc and J sc are observed to vary from 215 to 265 mV and 7.5 to 10.5 mA/cm 2 , respectively. The p-C:B/n-Si cells fabricated using 3 Bwt.% shows highest energy conversion efficiency, η  = 0.20% and fill factor, FF = 45%. While, the n-C:P/p-Si cell fabricated using 7 Pwt.% shows highest of η  = 1.14% and fill factor, FF = 41%. The quantum efficiency of p-C:B/n-Si and n-C:P/p-Si cells are observed to improve with percentage of B and P, respectively. The contribution of quantum efficiency in the lower wavelength region (below 750 nm) may be due to the photon absorption by carbon layer and in the higher wavelength region is due to the Si substrates.
Effects of direct current bias voltages on supported bilayer lipid membranes on a glassy carbon electrode
The effects of dc bias voltages on supported bilayer lipid membranes (s-BLMs) on a glassy carbon (GC) electrode have been investigated by cyclic voltammetry (CV) and electrochemical impedance spectroscopy (EIS). The experiments suggested that an appropriate positive bias voltage facilitated the formation of electrically dense membranes, but if the voltage is enough high, the lacunas on s-BLMs increased, and eventually caused the complete oxidation of the lipid membrane. While negative bias voltages could induce the damage of supported membranes to different extent. The changes of the form and quantity of graphite oxide on the surface of the electrode caused by dc bias voltages and the electroporation and damage of the membrane at high potentials may be responsible for the effects.