25.8Gbps Direct Modulation AlGaInAs DFB lasers with Ru-doped InP Buried Heterostructure for 70°C operation
25.8Gbps Direct Modulation AlGaInAs DFB lasers with Ru-doped InP Buried Heterostructure were fabricated for the first time. The lasers achieved high output power and clear eye opening at 70°C and are promising for uncooled operation.
25.8Gbps direct modulation of BH AlGaInAs DFB lasers with p-InP substrate for low driving current
1.3µm-band BH AlGaInAs DFB lasers with p-InP substrate are fabricated for 100GbE (25Gbps × 4 wavelengths). Very high mask margin of over 30% is achieved at 50oC under 25.8Gbps modulation with low operation current.
1.3- $\mu$m AlGaInAs Multiple-Quantum-Well Semi-insulating Buried-Heterostructure Distributed-Feedback Lasers for High-Speed Direct Modulation
This paper describes 1.3-mum AlGaInAs multiple-quantum-well semi-insulating buried-heterostructure distributed-feedback lasers for high-speed direct modulation. Combination of large differential gain AlGaInAs quantum wells and semi-insulating buried-heterostructure for reduction of active region achieved 25 and 40 Gb/s direct modulation with the device having the cavity length of 150 mum. The device whose Bragg wavelength is longer than gain peak wavelength showed 25 Gb/s direct modulation characteristics with superior temperature characteristics. The relaxation oscillation frequency of this device was 15 GHz and higher up to 70degC. Clear eye-opening was observed and single-mode fiber transmission experiments showed low power penalty up to 70degC. With the device of negative detuning with larger differential gain, we achieved 40 Gb/s direct modulation. This device showed high relaxation oscillation frequency and slope of 20.5 GHz and 3.2 GHz/mA1/2, respectively. The 40 Gb/s eye opened clearly at 25degC and eye-opening was observed up to 50degC.