Raman-scattering elucidation of the giant isotope effect in hydrogen-ion blistering of silicon.
In this work, we investigate the origin of a giant isotope effect discovered in the blistering of hydrogen-ion-implanted and annealed silicon. Si(001) samples were implanted or co-implanted with 5 keV of H and/or D ions to total fluences of 2 x 10(16) and 6 x 10(16) ion/cm(2). The lower fluence is sufficient for blistering by pure H, but the higher one is required for the maximum blister coverage whenever D is involved. On these samples, we carried out Raman-scattering investigations of the evolution of Si-H/D complexes upon a stepwise thermal annealing from 200 to 550 degrees C. We have identified the critical chemical transformations characterizing the hydrogen-deuterium-induced blistering of silicon. The puzzling dependence on ion mass appears to be mainly connected with the nature of the radiation damage. We have found that H is more efficient in "preparing the ground" for blistering by nucleating platelets parallel to the surface, essentially due to its ability to agglomerate in the multihydride monovacancy complexes that evolve into hydrogenated extended internal surfaces. By contrast, D is preferentially trapped in the surprisingly stable monodeuteride multivacancies.
Ion blistering of boron-doped silicon: The critical role of defect passivation
The microscopic mechanism of hydrogen ion blistering of silicon was investigated using Raman scattering spectroscopy and thermal desorption spectrometry. The data in B-doped Si(∼10−3∕Ωcm) are particularly worth noting, since B doping at this level strongly reduces both the ion dose and the thermal budget required for blistering. In that case the Si–H stretch mode is found to be shifted markedly towards higher frequencies characteristic of highly passivated vacancies and internal surfaces. It is deduced that the degree of defect passivation is a most critical factor for blistering.
Growth from Solutions
Growth from solutions is the crystallization of a compound whose chemical composition differs markedly from that of the initial liquid phase. Commonly used solvents are water, multicomponent aqueous or nonaqueous solutions, and melts of some chemical compounds. Differentiations are made based on growth temperatures and on the chemical nature of the solvent. In growth from low-temperature aqueous solutions, the temperatures generally do not exceed 80–90°C; in growth from superheated aqueous solutions (hydrothermal method), they reach 800°C, and in growth from salt melts (molten-salt, flux, or fluxed melt growth), they usually do not exceed 1200–1300°C, but sometimes reach 1500°C.