Optimum built-in barrier height utilizing an extended concept of impedance matching
Schottky-barrier height optimization for high-frequency usage is analytically discussed with an extended concept of impedance matching. The optimum value of 0.3 eV is almost a universal constant under various operating conditions, and agrees well with the previous prediction obtained by large signal simulation and InxGa1-xAs experiments.
Schottky barrier height of n‐InxGa1−xAs diodes
The barrier heights φB of Au/n‐InxGa1−xAs diodes are measured by the capacitance‐voltage and saturation current methods. The composition dependence of the barrier height is φB (eV) = 0.95 − 1.90x + 0.90x2. A low barrier height with a relatively wide band gap is obtained in this system.
A feasibility study of adolescent sex education: medical students as peer educators in Edinburgh schools
Objectives To determine the feasibility of medical students being involved in sex education in secondary schools, as lesson leaders in peer group discussions.