High-temperature quasi-continuous operation of optically pumped CdZnTe/ZnTe multiple-quantum-well lasers at 620 nm
Low-lasing-threshold quasi-continuous optically pumped II-VI quantum-well lasers were operated well above room temperature at 620 nm. This result shows promise for high-repetition-rate, short-pulse generation by direct modulation of the injection current and also CW operation of future wide-gap II-VI diode lasers above room temperature.<<ETX>>
Room temperature excitonic absorption in CdZnTe/ZnTe quantum wells: Contributions to exciton linewidth
We explore the inhomogeneous and homogeneous contributions to the exciton linewidth that have allowed the recent observation of room temperature excitonic absorption in II–VI semiconductor quantum wells. Our measurements of the absorption spectrum in a range of CdxZn1−xTe/ZnTe quantum well heterostructures indicate that temperature‐dependent contributions to the exciton linewidth are influenced by alloy composition.
Quantum well waveguide intensity modulator at visible wavelengths using CdZnTe/ZnTe quantum wells
We demonstrate the first waveguide intensity modulator for visible wavelengths based on the quantum‐confined Stark effect. The active waveguide core is composed of 58 Cd0.42Zn0.58Te/ZnTe quantum wells surrounded by Cd0.12Zn0.88Te cladding layers. We obtain ≳10 dB modulation depth at 640 nm with 4 V bias in a 500‐μm‐long waveguide.