The Characteristics of New n-Type Polycrystalline Silicon Thin-Film Transistors Employing Alternating Magnetic-Field-Enhanced Rapid Thermal Annealing
We fabricated a new top-gate n-type depletion-mode polycrystalline silicon (poly-Si) thin-film transistor (TFT) employing alternating magnetic-field-enhanced rapid thermal annealing. An n+ amorphous silicon (n+ a-Si) layer was deposited to improve the contact resistance between the active Si and source/drain (S/D) metal. The proposed process was almost compatible with the widely used hydrogenated amorphous silicon (a-Si:H) TFT fabrication process. This new process offers better uniformity when compared to the conventional laser-crystallized poly-Si TFT process, because it involves nonlaser crystallization. The poly-Si TFT exhibited a threshold voltage (VTH) of -7.99 V at a drain bias of 0.1 V, a field-effect mobility of 7.14 cm2/V ldr s, a subthreshold swing (S) of 0.68 V/dec, and an ON/OFF current ratio of 107. The diffused phosphorous ions (P+ ions) in the channel reduced the VTH and increased the S value.
Asymmetric source/drain offset structure for reduced leakage current in polycrystalline‐silicon thin‐film transistors
Abstract— An asymmetric source/drain offset structured (AOS) polycrystalline‐silicon (poly‐Si) thin‐film transistor (TFT) has ben developed by employing alternating magnetic‐field‐enhanced rapid thermal annealing (AMFERTA). The realized AOS poly‐Si TFT, with long drain‐side offset length LOff1 and short source‐side offset length LOff2, considerably suppresses leakage current without sacrificing ON‐current. The offset regions of the AOS TFT are naturally lightly doped due to the diffusion of n+ ions by AMFERTA crystallization. The fabrication process of the AOS TFT does not require any additional offset mask step or doping process. Experimental results show that the leakage current is considerably suppressed when the drain‐side offset length LOff1 is larger than 1.25 μm.
Nonsingular multidimensional cosmologies with Lobachevsky spatial sections
Examples of nonsingular cosmological models are presented on the basis of exact solutions to multidimensional gravity equations. These examples involve pure imaginary scalar fields, or, in other terms, “phantom” fields with an unusual sign of the kinetic term in the Lagrangian. We show that, with such fields, hyperbolic nonsingular models with a cosmological bounce (unlike spherical and spatially flat models) emerge without special relations among the integration constants, i.e., without fine tuning. In such models, the extra-dimension scale factors as well as scalar fields evolve smoothly between different finite asymptotic values. Examples of theories which create phantom scalar fields are obtained from string-inspired multidimensional field models and from theories of gravity in integrable Weyl space-times.