Spin Coated YSZ Thin Films on Silicon Substrate
Yttria Stabilized Zirconia (YSZ) thin films (<10 μm) were fabricated by spin coating technique on silicon (Si). Parameters such as concentration ratio of YSZ powder to solvent were varied accordingly. The effects of these variations were investigated and discussed. Using X-ray Diffraction and Raman Spectroscopy, the crystal structure of the samples were determined. The 8-YSZ thin films have cubic fluorite structure. The X- ray diffraction patterns were in agreement with the samples' Raman spectra. Pores were evident on single coated substrates but were minimized using higher YSZ concentration. Index Terms—Yttria Stabilized Zirconia,YSZ, spin-coating, thin film ——————————  ——————————
Nanocrystalline zirconia-yttria system - a Raman study
Abstract Nano sized zirconia (ZrO 2 ) powders doped with different amount of yttria (Y 2 O 3 ) (3, 5 and 8 mol%) were prepared through coprecipitation method. The crystallite size estimated from the X-ray peak broadening is around 10 nm. Phase identification was carried out using XRD and Raman spectroscopy. Raman spectroscopic study of the synthesized materials show clear evidence of the presence of single phase cubic structure in the case of 8 mol% Y 2 O 3 doped fully stabilized zirconia (8Y-FSZ); tetragonal phase in the case of zirconia doped with 3 mol% Y 2 O 3 (3Y-TZP-tetragonal zirconia polycrystal) and a mixture of cubic and tetragonal phases for 5 mol% Y 2 O 3 doped partially stabilized zirconia (5Y-PSZ). Raman technique is therefore an effective tool to distinguish the phases present in the calcined nano sized powders of zirconia.
Synthesis of ZrO2/Y2O3 by combined arc and magnetron sputtering technique
Abstract Preparation of yttria-stabilized zirconia (YSZ) films by combined reactive arc evaporation and magnetron sputtering was investigated in this work. At first, the dependencies of the film deposition rate on oxygen partial pressure, arc discharge current and magnetron discharge power were measured. After complete analysis of the process of arc-magnetron deposition, the YSZ thin films were deposited on silicon, on the alloy-600 and on the ZrO2 ceramic substrates at a substrate temperature of 400 °C. The structure and refractive index of films were investigated by X-ray diffraction and ellipsometry, respectively.