Growth Mechanism and Crystal Form of Potassium Dichromate
The structure of potassium dichromate (P1, Z = 4) consists of two layers parallel to (001), between which no crystallographic symmetry relation exists. These layers are nearly coincident with each other when rotated through 90° about c * . One question remained unanswered: do the crystals grow parallel to {001} with d(002) or d(001) layers? The pseudo-fourfold axis does not run parallel to a crystallographic direction and acts only between two layers. This means that crystal growth parallel to {001} occurs in d(001) layers, which corresponds to the occurrence of one-sided intergrowths on (001). The layers are also nearly coincident with each other through pseudo-twofold axes parallel to [110] and [110], These axes do not act in the (100) or (010) projections. In the projections along the [110] and [110] directions, the lattice directions are then extended by a factor of approximately √2, and the formula units in the cell of the d(002) layer are doubled. This indicates a further possible growth mechanism. The theoretical growth forms of the crystals were calculated with the Fourier transform method of morphology.
On the relationship between crystal structure and morphology; The anomalous crystal growth of potassium bichromate☆
Potassium bichromate belongs to those substances on which a distinctive heteromorphism can be observed. The triclinic crystals which belong, on account of the structure determination [10] to point group 1, show in aqueous solutions a different development of the basal planes {100}. According to Schubnikov [1,2] the plane (100) is on freely-suspended grown crystals always smooth, the parallel opposite plane, however, roughened. The present investigations have confirmed Schubnikov's observations. The phenomenon of roughing of the (100) plane is attributed to twinning. The occurence of this effect is dependent on the temperature and supersaturation of the solution. An explanation of the asymmetry can be deduced from the mechanisms of growth of F faces according to Hartman and Perdok.
Selective etching of InP in NaF solution
Abstract The crossing porous structure of InP has been obtained by electrochemical etching in NaF solutions. The behavior of the periodic oscillation occurs at different potential ranges for the different concentrations of solutions, and it will disappear with the concentration of the solution decreased. The scanning electron microscope (SEM) image shows that the pores have two directions on the surface and are perpendicular to each other. The two directions are assigned to [0 1 1] and [ 0 1 ¯ 1 ], respectively. The SEM image of the cross-section also shows that the two directions are assigned to [1 1 1]B and [ 1 1 ¯ 1 ¯ ]B. Both are due to the selective etching of F− ions. The crossing porous structure of InP is a very promising feature for the three-dimensional structure of III–V compound semiconductors for photonic band gap materials.