Structual and Dielectric Properties of Pb(Zr0.53Ti0.47)O3 Thin Films Grown on LaNiO3 Buffered Si Substrates
Ferroelectric Pb(Zr0.53Ti0.47)O3 thin films with thickness of around 800 nm were prepared on LaNiO3 (LNO) buffered SiO2/Si substrates by sol-gel method. The LNO buffer layer serves as the bottom electrode and the template for growing PZT thin films with preferred orientation. The (110)-textured PZT thin films can be obtained on 250 nm-thick LNO buffered SiO2/Si substrates. Upon using the LNO buffer layer, the annealing temperature of the PZT films is lowered to 600degC. Our results indicate that PZT thin films prepared on LNO buffered Si substrates have good structural and dielectric properties for sensor and actuator applications.
Dielectric properties of lead zirconate titanate thin films deposited on metal foils
Ferroelectric lead zirconate titanate (PZT) thin films deposited on metal foil substrates are suitable for developing a wide range of applications. In this letter, we report on PZT films deposited on a variety of foils, including titanium, stainless steel, brass, and nickel alloys, using sol–gel processing. The dielectric properties were shown to depend strongly on the foil material. Excellent properties for capacitors, including high dielectric constant (e=400), low dielectric loss (loss tangent of <5%), and low leakage current (below 5×10−8 A at 5 V) were obtained on titanium and good results were also obtained on other foils, such as stainless steel and brass foils. Also, excellent high-frequency properties were observed for capacitors on titanium, stainless steel, and brass foils.
Dependence of electrical properties on film thickness in Pb(ZrxTi1−x)O3 thin films produced by metalorganic chemical vapor deposition
Strongly c‐axis oriented Pb(ZrxTi1−x)O3 (PZT) thin films with tetragonal perovskite structure (0.45≤x≤0.52) were epitaxially grown on (100)Pt/(100)MgO substrates using metalorganic chemical vapor deposition. Film thickness could be varied by altering the growth time. The electrical properties of PZT thin films sharply change below a thickness of 0.5 μm: the dielectric constant and remanent polarization decrease while the coercive field increases. These phenomena are explained by a model in which a layer with low dielectric constant exists in series with the normal PZT layer. The origins of this layer are systematically studied and found to be the intrinsic stress produced by the coalescence of crystal grains.