Structural, optical and electrical properties of nanocrystalline TiO2 -- HfO2 thin films
In the present work the properties of mixed HfxTi1-xO2 solid solution thin films in metal-oxide-semiconductor (MOS) configuration have been studied. Thin films, were grown on monocrystalline silicon substrates using the low pressure hot target reactive sputtering from the Ti:Hf mosaic target. From optical transmission measurements the 3.42 (eV) bandgap of the thin films has been estimated. Electrical characterization of the prepared MOS structures shows classical capacitance- and current-voltage behaviors indicating medium-k gate oxide properties with the low leakage current
Microstructure and Optical Properties of TiO2 Thin Films Prepared by Low Pressure Hot Target Reactive Magnetron Sputtering
Abstract Thin films of TiO2 were deposited onto (1 0 0) oriented silicon and glass substrates using modified magnetron sputtering method. The method, among the others, consisted in employing low pressure of reactive gas (
Photoluminescence of TiO2: Eu3+ thin films obtained by sol-gel on Si and Corning glass substrates
Abstract In this paper we report results on the fabrication and characterisation of thin films of titania (TiO 2 ), a novel host for the Eu 3+ activator ion. The titania films were produced by the sol–gel process at room temperature using the dip coating method and deposited on silicon and corning glass substrates. It is shown that different surface morphology and crystalline structures are developed for the TiO 2 :Eu films deposited on different substrates. When an above TiO 2 band gap photoexcitation line (He–Cd 325 nm) is used, the films show a strong red photoluminescence (PL) signal associated with the 5 D 0 → 7 F j transition of the electronic structure of Eu 3+ . The PL emission has better characteristics for those films deposited on silicon wafers. The PL signal becomes weaker after annealing at relatively low temperatures such as 450°C due to thickness reduction of the TiO 2 film and the loss of Eu in the near-surface region.