A thermodynamical model of molecular beam epitaxy, application to the growth of II VI semiconductors
We present a model of molecular beam epitaxy based on thermodynamics. The equilibrium between a compound or a ternary alloy with the gas phase is illustrated in the case of HgTe and CdHgTe. The meaning of equilibrium pressure is analysed and we make the assumption that the fluxes leaving the actual growing compound are linked by the mass action law where the pressures are transformed into the equivalent fluxes. A detailed balance of the species leaving or arriving at the surface is then possible and leads to a set of equations which can be solved to predict the growth rate, the x value of a ternary alloy, the excess of one of the species, the incorporation coefficient. Examples of calculation are shown for CdTe and Cd x Hg 1−x Te and are compared with experimental results and show a good agreement. The main interest of this model resides in its ability to predict the effects of the modification of one of the growth parameter. Nevertheless it predicts only the limit conditions which are not necessary reach due to the kinetic of the reactions Presentation d'un modele thermodynamique de l'epitaxie par jets moleculaires. Illustration par les cas de HgTe et CdHgTe. La comparaison avec les resultats experimentaux montre la validite des previsions du modele, dont l'interet principal est de permettre d'evaluer l'influence de la modification d'un parametre de croissance. La validite de ce modele est cependant limitee si la cinetique des reactions ne permet pas d'atteindre l'equilibre; ce n'est pas le cas pour les alliages II-VI etudies ici
Latest developments in the growth of CdxHg1−xTe and CdTe–HgTe superlattices by molecular beam epitaxy
We present here a general survey of our activity since 1981. We show that n‐ or p‐type CdxHg1−xTe with low carrier concentration, high mobility and crystal perfection limited by the substrate itself can be grown by molecular beam epitaxy (MBE) between 180 and 210 °C onto CdTe(111) and (100) orientation. We report for the first time the characteristics of a photovoltaic device processed on a p‐type CdxHg1−xTe MBE layer which proves that this material can be grown by MBE with a detection device specification. We also give some information concerning 100 periods of 224 A CdTe–HgTe superlattice previously reported.
Coated-wire electrodes containing polymer immobilized ionophores blended with poly(vinyl chloride).
Polymers containing covalently attached 18-crown-6 or 2.2.2 cryptand units were incorporated into plasticized PVC membranes and the composite membranes were examined as potassium ion sensor elements. Ionophores were linked to carboxy-PVC and to poly(acrylic acid) via amide linkages to an alkyl spacer unit. Coated-wire electrodes (CWEs) from the immobilized ionophores gave acceptable responses, but conventional ion-selective membrane electrodes (ISEs) prepared by solvent casting were inactive. Dip-cast membranes did give active ISEs. Potassium electrode performance was independent of the loading of the ionophore within the acrylate support polymer, but depended upon the spacer length. Ion selectivity varied with the ionophore loading within the support polymer. Selectivity is a composite of the ionophore selectivity and ion-exchange interactions with the acrylate backbone, giving selectivities akin to carboxylate substituted crown ethers, notably enhanced monovalent/divalent ion discrimination relative to the ionophore in solution. Polymer immobilization extended the lifetime of active electrodes.