TCAD for MEMS
R. Paganini*, R. Ruehl*, J. Funk and H. Baltes Physical Electronics Laboratory, ETH Zurich, Switzerland +Integrated Systems Laboratory, ETH Zurich, Switzerland *ISE AG, Switzerland Introduction. We present key components of a technology CAD (TCAD) tool for inte¬ grated micro electro mechanical system (iMEMS) simulation. The TCAD capabilities augment the SOLIDIS device simulator [1], Key components are: Meshing interface to process simulation; Application-oriented solid modeler; Algorithms for iMEMS sensor and actuator device simulation using finite and boundary element compuational engines; Interface for mixed-signal system level simulation using SPICE. Meshing. We present an approach to boundary-to-mesh generation based on a Monte
Coupled 3D thermo-electro-mechanical simulations of microactuators
We report 3D simulations of microactuators based on the solution of consistently coupled thermo-electro-mechanical equations. The necessary solution algorithms are implemented into the MEMS simulation environment SOLIDIS and allow efficient optimization studies of geometrically complex MEMS devices. Key issues are the solution of coupled equation systems using zone partitioning, adaptive mesh refinement, mesh updating using geometrical algorithms and field smoothing for the extraction of accurate electrostatic forces.
Process-dependent Thermophysical Properties Of CMOS IC Thin Films
We give the first overview of measured thermophysical properties of thin films produced by three commercial CMOS IC processes. Values and temperature coefficients of the thermal conductivities, heat capacities, electrical resistivities, charge carrier densities, and Seebeck coefficients of various CMOS layers are reported. The properties were measured with dedicated CMOS compatible microstructures in the temperature range from 100 to 420 K. Preliminary conclusions are drawn on systematic, process-independent, relationships between some properties and on the distinct process-dependence of others.