High Points Recognition Method of Scraped Surface Based on Background Subtraction
Using computer vision library OpenCV, a method of automatic recognition high points of scraped workpiece surface is presented. The image is dealt with by background subtraction, Median filtering, morphological processing, image negates, contour finding and drawing contours. In order to accurately and efficiently recognize the high-point contours and mark its center positions, mathematical morphology and specific processing function were used.
Background Extraction of Color Video Based on the Frame-Difference
Based on the frame-difference of color video stream during a time interval,we can extract the real-time background image of the video with moving objects in it.By using comprehensive means of red,green and blue components,this paper conducts a more in-depth algorithm to real-time extraction of image background problem of moving object detection.The research shows that,if the time interval is too short,the extracted background will have holes in it;if the time interval is too long,the extracted background will not be real time.This will cause errors to follow processing of moving objects detection.Both the realtime and the holes of the extracted background can has a good result if we select a reasonable time interval according to the size and the moving velocities of the objects in video.
Selective etching of InP in NaF solution
Abstract The crossing porous structure of InP has been obtained by electrochemical etching in NaF solutions. The behavior of the periodic oscillation occurs at different potential ranges for the different concentrations of solutions, and it will disappear with the concentration of the solution decreased. The scanning electron microscope (SEM) image shows that the pores have two directions on the surface and are perpendicular to each other. The two directions are assigned to [0 1 1] and [ 0 1 ¯ 1 ], respectively. The SEM image of the cross-section also shows that the two directions are assigned to [1 1 1]B and [ 1 1 ¯ 1 ¯ ]B. Both are due to the selective etching of F− ions. The crossing porous structure of InP is a very promising feature for the three-dimensional structure of III–V compound semiconductors for photonic band gap materials.