Chapter 4. High Temperature Barrier Layers
The concept of hybrid electrode-barrier layers is introduced in the first section. The experimental process and ferroelectric properties of PZT films on the electrode-barrier layers are explained in detail in the second section. The fatigue problem and minimization of the fatigue are reviewed, and the improvement of the fatigue properties using the high temperature multi-layer substrates are discussed in the last section. 4.1 INTRODUCTION In the previous two chapters, high density destructive readout (DRO) FRAM were investigated by primarily focusing on materials processing temperature. The low temperature processing was successfully achieved for the high density DRO FRAM applications by using a modified sol-gel processing. The other approach we have taken for integrating PZT films into high density CMOS devices is to develop novel electrode-barrier layers for high temperature processing. Since the currently used diffusion barrier layers such as TiN and TiSi 2 maintain their electrical conductivity only up to 550 °C, high temperature barrier layers are desirable for the integration of PZT films into high density CMOS devices. Ideal electrode materials for the DRO FRAM devices should possesses good electrical conductivity, outstanding thermal and chemical stability, and amenability to dry etching. In particular, the electrode-barrier should be a good diffusion barrier without reacting the ferroelectric materials or the underlying substrate (poly-Si) during high temperature processing. In this research, we propose Pt/IrO 2 /Ir hybrid electrode

 Report

ra n g e d f ro m 3 0 t o 1 9 0 m g /L .  C h a n n e l d iv e rs io n  N o m a jo r c h a n g e in o v e ra ll c a tc h m e n t a n d th u s a d v e rs e im p a c t to h y d ro lo g y a n d th e a s s o c ia te d w a te r q u a lit y im p a c t is n o t a n ti c ip a te d .  S e w e ra g e p ro p o s e d b y t h e d e v e lo p m e n t c o u ld b e b e n e fi c ia l to e x is ti n g w a te r q u a lit y.
Complications of motility peg placement for porous hydroxyapatite orbital implants
Aim: To evaluate the complications associated with pegging of porous hydroxyapatite orbital implants. Methods: Complications associated with pegging were retrospectively reviewed from the charts of 100 of 133 patients with hydroxyapatite implantation from 1993 to 2000. Results: 48 (48%) of the 100 hydroxyapatite implanted patients who had undergone pegging were found to have problems with their pegs, including discharge (45.8%), peg falling out (20.8%), pyogenic granulomas (16.7%), popping peg (14.6%), hydroxyapatite visible around peg hole (8.3%), part of peg shaft visible (6.2%), peg drilled off centre (6.2%), peg drilled at an angle (4.2%), and excess movement of peg (4.2%). The standard peg fell out statistically more often than the peg and sleeve system (Yates's corrected χ2, p=0.038). There was a trend towards complications of the peg with use of a standard peg (versus sleeved peg) (p=0.226). Conclusions: There are several potential complications of pegging. Most complications are minor and can be managed successfully.