MONITORING OF CORROSION UNDER CATHODIC PROTECTION CONDITIONS UTILIZING COUPLED MULTIELECTRODE SENSORS
Real-time corrosion monitoring for carbon steel materials in simulated seawater under cathodic protection conditions was conducted, utilizing coupled multielectrode sensors. It was demonstrated that the coupled multielectrode sensor is an effective real-time tool for monitoring the effectiveness of cathodic protection and for measurement of the threshold value of the protection potential for specific equipment.
Studies of Microbiologically Influenced Corrosion Using a Coupled Multielectrode Array Sensor
A newly developed multielectrode array sensor (MASS) was used to conduct a series of abiotic and biotic tests to determine if the probe can detect corrosion induced by microbial activity. The probe was able to determine the maximum corrosion rate in the presence of sulfate reducing bacteria (SRB) and showed that this rate was at least a factor of 10 greater than in the absence of SRBs. In addition, the corrosion rates obtained using the probe were much higher than those determined using linear polarization resistance further demonstrating its inherent better sensitivity to localized corrosion.
Photoreflectance characterization of vanadium-doped GaAs layers grown by metalorganic vapor phase epitaxy
Abstract We characterized the vanadium-doped (GaAs:V) layers grown on GaAs substrate by metalorganic vapor phase epitaxy. The conductivity of the samples is checked by the Hall effect measurements, and it is n type with electrons concentration ranging from 2×10 13 to 2×10 17  cm −3 . We used the photoreflectance technique (PR) to study the effect of vanadium doping on the optical properties of GaAs. Our experimental results show that the built-in electric field F and the broadening parameter Γ 0 increase with V-doping concentration. Furthermore, the temperature dependence of the built-in electric field and the broadening parameter of GaAs:V samples have been investigated by PR. It has been observed that these parameters increase with increasing temperature. The decrease of the built-in electric field with decreasing temperature is due to the photovoltage effect.We characterized the vanadium-doped GaAs (GaAs:V) layers grown on GaAs substrate by metalorganic vapor phase epitaxy.