The Characteristics of New n-Type Polycrystalline Silicon Thin-Film Transistors Employing Alternating Magnetic-Field-Enhanced Rapid Thermal Annealing
We fabricated a new top-gate n-type depletion-mode polycrystalline silicon (poly-Si) thin-film transistor (TFT) employing alternating magnetic-field-enhanced rapid thermal annealing. An n+ amorphous silicon (n+ a-Si) layer was deposited to improve the contact resistance between the active Si and source/drain (S/D) metal. The proposed process was almost compatible with the widely used hydrogenated amorphous silicon (a-Si:H) TFT fabrication process. This new process offers better uniformity when compared to the conventional laser-crystallized poly-Si TFT process, because it involves nonlaser crystallization. The poly-Si TFT exhibited a threshold voltage (VTH) of -7.99 V at a drain bias of 0.1 V, a field-effect mobility of 7.14 cm2/V ldr s, a subthreshold swing (S) of 0.68 V/dec, and an ON/OFF current ratio of 107. The diffused phosphorous ions (P+ ions) in the channel reduced the VTH and increased the S value.
Experimental and molecular dynamics study on crystallization of amorphous silicon under external fields
Solid-phase crystallization (SPC) of amorphous silicon (a-Si) under an external force field is investigated experimentally and numerically. Experimental results show that the kinetics of crystallization can be greatly enhanced by applying induction fields without the heating problems of a-Si film and its substrate, since temperature rises during the crystallization process are negligibly small. To explore the underlying acceleration mechanisms for the SPC process under the external fields, molecular dynamics simulations are carried out using the Tersoff potential. The numerical amorphous structure is obtained by the liquid quenching method and is utilized to simulate the crystallization processes at various process temperatures with and without external force fields. While homogeneous crystallization of a-Si could not be achieved readily, it is shown that the heterogeneous crystallization can be significantly accelerated by external force fields. This enhancement is due to increased molecular jumping frequencies associated with the molecular potential energies being increased by external excitations, rather than due to thermal mechanisms dominant in conventional SPC processes.
Phase characterisation of simulated high burn-up UO2 fuel
Abstract To determine the lattice constant variation with burn-up and the oxidation behaviour at high temperatures, simulated UO2-spent fuels with burn-ups up to 200 GWd tM−1 were prepared by cold pressing and sintering and characterised by X-ray diffraction analysis and thermogravimetry. The fcc-lattice parameter of the sintered samples determined at room temperature, showed a continuous decrease with the simulated burn-up. During oxidation the conversion of the simulated fuels to the (U,FP)4O9 and (U,FP)3O8-type phases was strongly delayed when the simulated burn-up exceeded 80 GWd tM−1. Also, at high burn-ups (>100 GWd tM−1), large fractions of the (U,FP)4O9-type phase remained untransformed to (U,FP)3O8 after prolonged exposure to air at 950–1000°C. This suggests a marked widening of the (U,FP)4O9-phase field when the amount of substituted uranium atoms exceeds values of about 8%.