Ge quantum dots on silicon for terahertz detection
Terahertz has attracted attention from both millimeter and infrared technologies. Currently, solutions consist of expensive sensor systems limiting the amount of applications. To obtain a low cost solution, one approach is to use thermistor material based on Ge on Si quantum dots on microbolometers. It has been demonstrated that SiGe monocrystalline materials have superior properties to amorphous silicon or VOx regarding the temperature coefficient of resistivity and 1/f noise. Unfortunately, the calculated critical thickness for strained SiGe material show unreasonable layer thickness for high Ge amounts. To avoid this, Ge dots instead of SiGe layers are preferred. This article focuses on optimizing the thermistor properties of Ge-dots. All samples were grown on Si (100) substrates in a temperature range of 500-650 C at 20 torr by RPCVD. They were characterized (XRD, HRSEM and AFM etc.) determining the diameter, thickness, density and uniformity. Fourier transform photoluminescence was performed to find the spatially direct (EA) and indirect (EB) bandgap transitions.
Room temperature terahertz microbolometers
We report on the development of an array of uncooled antenna-coupled microbolometer based on an amorphous silicon thermistor. The design goal is an optical bandwidth of 0.2-1 THz with a NEP of 1 pW/Hz/sup 1/2 / per pixel.
Submicron polymer structures with X-ray lithography and hot embossing
This article describes the process chain for replication of submicron structures with varying aspect ratios (AR) up to 6 in polymethylmethacrylate (PMMA) by hot embossing to show the capability of the entire LIGA process to fabricate structures with these dimensions. Therefore a 4.7 μm thick layer of MicroChem 950k PMMA A11 resist was spin-coated on a 2.3 μm Ti/TiOx membrane. It was patterned with X-ray lithography at the electron storage ring ANKA (2.5 GeV and λc ≈ 0.4 nm) at a dose of 4 kJ/cm3 using a Si3N4 membrane mask with 2 μm thick gold-absorbers. The samples were developed in GG/BDG and resulted in AR of 6–14. Subsequent nickel plating at 52°C resulted in a 200 μm thick nickel tool of 100 mm diameter, which was used to replicate slit-nozzles and columns in PMMA. Closely packed submicron cavities with AR 6 in the nickel shim were filled to 60% during hot embossing.