Characteristics of a high power ultrasonic array transmitter in air
A high-power ultrasonic array transmitter with 144 transmitting elements for 3D measurements in air has been developed. The sound pressure level of 126 dB was obtained at a distance of 5 m in the air with an ultrasonic frequency of 40 kHz. This value is approximately 32 dB higher than that obtained using a single transmitting element. The characteristics of the array transmitter were studied and compared with simulation results. The experimental results were in good agreement with the simulation results.
Air-coupled ultrasound inspection of various materials.
Conventional ultrasound inspection, a standard non-destructive testing method, uses a coupling medium (e.g. water) because of impedance mismatch. This liquid contact is a drawback because it prevents inspection of many materials. There is a need, then, for air-coupled ultrasound testing, which is now feasible because of low impedance focused narrow band transducers and sensitive electronics, both of which improve the signal-to-noise ratio. We present results obtained on fibre-reinforced plastics, water sensitive materials (e.g. reinforced ceramics), and "shape adaptive" structures to reveal delaminations, impacts, and growth of internal defects. Actuators embedded in "adaptive" structures are used as transmitters while the receiver records the signals. Thus it is possible to image defect areas and non-linear behaviour of potential defects.
Selective etching of InP in NaF solution
Abstract The crossing porous structure of InP has been obtained by electrochemical etching in NaF solutions. The behavior of the periodic oscillation occurs at different potential ranges for the different concentrations of solutions, and it will disappear with the concentration of the solution decreased. The scanning electron microscope (SEM) image shows that the pores have two directions on the surface and are perpendicular to each other. The two directions are assigned to [0 1 1] and [ 0 1 ¯ 1 ], respectively. The SEM image of the cross-section also shows that the two directions are assigned to [1 1 1]B and [ 1 1 ¯ 1 ¯ ]B. Both are due to the selective etching of F− ions. The crossing porous structure of InP is a very promising feature for the three-dimensional structure of III–V compound semiconductors for photonic band gap materials.