Reducing contact resistance of high current connectors on electric vehicle by controlling contact pressure and addition of plating material
This paper studies on contact resistance on copper busbar connection relative to plating materials, plating thickness, and contact pressure. This study is important because busbar connection plays an important role on electric distribution performance. A good busbar connection would have low contact resistance, therefore low energy losses and better reliability. In this study, the sample are busbar connection without plating, busbar connection with zinc plating, busbar connection with nickel plating, and busbar connection with silver plating. First aspect that is going to be tested is contact resistance measurement without load on each. The next test is contact resistance measurement with DC load of 9, 18, and 27 A. Each test is conducted with the contact pressure variation of 5.6, 7.0, dan 8.4 MPa, and with plating thickness of 5, 15, and 25 μm. The result shows that busbar connection with 5 μm silver plating have much lower contact resistance compared to all the other configuration.
Reliability of power connections
Despite the use of various preventive maintenance measures, there are still a number of problem areas that can adversely affect system reliability. Also, economical constraints have pushed the designs of power connections closer to the limits allowed by the existing standards. The major parameters influencing the reliability and life of Al-Al and Al-Cu connections are identified. The effectiveness of various palliative measures is determined and the misconceptions about their effectiveness are dealt in detail.
Fundamental structure forming phenomena of polycrystalline films and the structure zone models
Previous structure zone models used for the interpretation of the experimental results were constructed by compiling the various structures found in thick polycrystalline films deposited at different temperatures and parameters. The present paper shows that while the temperature dependence of surface and bulk diffusion can not adequately describe the evolution mechanisms of various polycrystalline thin film structure, the fundamental structure forming phenomena, including the contribution of impurities introduced by the authors make possible the comprehensive description of the structure forming mechanisms. Real structure zone models including also the related textures, are constructed by considering the concentration of impurities (co-deposited additives) in the vapour beam as a new deposition parameter, and the fundamental structure forming phenomena. These are phenomena composed of atomic processes, and can give account for the global effect of the atomic processes and are directly responsible for the structure evolution. Impurities (additives) can promote or inhibit the operation of the structure forming phenomena (promoter or inhibitor resp.). The new structure zone models can be used to tailor polycrystalline film structures of large variety (from large grained through columnar to the micro- or nanocrystalline structures) and to diagnose technologies.