Thermal Stability Of FeTaN As A Function Of N And Ta Content
FeTaN thin films promise to be a good candidate for inductive head pole materials. FeTaN thin films which are nanocrystalline and possess the required magnetic properties in the as-deposited state are advantageous because they do not require a high temperature processing anneal. However, FeTaN films must possess sufficient thermal stability in order to maintain their magnetic properties while being processed into inductive heads. In this study we have undertaken systematic microstructural and magnetic measurements on nanocrystalline, single-layer FeTaN thin films as a function of N and Ta content and annealing temperature. The annealing temperatures used are less than 300/spl deg/C and are meant to simulate head processing conditions. The addition of Ta was found to enhance thermal stability. By stabilizing the microstructure, Ta also stabilizes magnetic properties such as coercivity and magnetostriction (structure determines properties). The optimum amount of Ta for thermal stability while maintaining good magnetic properties was 10 weight percent. In the highest N content Fe-10TaN thin films, soft magnetic properties were found to be controlled by the magnetic domain structures which are governed by magnetoelastic anisotropy. These films which exhibited a magnetoelastic anisotropy less than -2/spl times/10/sup 4/ ergs/cm/sup 3/ also exhibited stripe domains which resulted in relatively high coercivities.
Origin and thermal stability of HK in FeTaN thin films
In this study 2000 A FeTaN thin films are annealed at 150 °C in both longitudinal and transverse magnetic fields. Both anneals result in a decrease in HK, which is shown to be a result of interstitial N, however, the transverse anneal results in a 90° rotation of HK and a 33% larger decrease in the magnitude of HK as compared to the longitudinal anneal. Subsequent transverse field anneals show that HK is completely reversible in relatively short times at any temperature above 75 °C. Our results are consistent with the diffusion of interstitial N being responsible for the rotatable behavior of HK in FeTaN.
Growth from Solutions
Growth from solutions is the crystallization of a compound whose chemical composition differs markedly from that of the initial liquid phase. Commonly used solvents are water, multicomponent aqueous or nonaqueous solutions, and melts of some chemical compounds. Differentiations are made based on growth temperatures and on the chemical nature of the solvent. In growth from low-temperature aqueous solutions, the temperatures generally do not exceed 80–90°C; in growth from superheated aqueous solutions (hydrothermal method), they reach 800°C, and in growth from salt melts (molten-salt, flux, or fluxed melt growth), they usually do not exceed 1200–1300°C, but sometimes reach 1500°C.