Low Turn-on Voltage InGaP / GaAsSb / GaAs DHBT Grown by MOCVD
In this work, an InGaP/GaAsSb/GaAs DHBT with carbon doping up to 4E19/cm GaAsSb base was studied. A current gain of 115 at the collector current density of 25KA/cm2 was achieved for the Rbs of about 530ohm/sq. Over 100mV turn-on voltage and knee voltage reduction and 2/3 offset voltage were obtained for the GaAsSb based HBT compared with the standard InGaP/GaAs SHBT. The DC gain of the device is less temperature dependence (the DC gain variation is less than 3% for the temperature range from 25 degree C to 100 degree C.) due to the larger valence band discontinuity between InGaP emitter and GaAsSb base, compare with the standard InGaP/GaAs SHBT. These results indicate that GaAsSb is a great choice for the base material of a low turn-on voltage HBT.
Temperature-dependent valence band offset and band-gap energies of pseudomorphic GaAsSb on GaAs
The band-gap (Egp) and valence band offset (ΔEv) energies of pseudomorphic GaAsSb layers on GaAs substrate are determined from temperature-dependent photoluminescence measurements on GaAsSb/GaAs and GaAsSb/GaAlAs quantum wells grown by molecular beam epitaxy. A clear evidence of staggered type-II band alignment of GaAsSb relative to GaAs and a value of 1.05 for the valence band offset ratio (Qv) are proposed. Finally, through a detailed comparison of these values with those published previously, we have shown that the scatter in Qv found in the literature (<1 to 2.1) is closely dependent on the exact determination of Egp. Particularly, we have shown that the strain dependence of the deformation potential is important in the calculation of the strain energy contribution to Egp.
Effect of superficial gas velocity on the particle temperature distribution in a fluidized bed with heat production
The heat transfer behavior of particles and gas in an olefin polymerization fluidized bed was numerically analyzed using an in-house developed 3-D computational fluid dynamics discrete element model (CFD-DEM). First the implementation of the model was verified by comparing simulation results with analytical results. A constant volumetric heat production rate was implemented in the particle energy equation to mimic the heat production due to the polymerization reaction. It was found that the probability density function (PDF) of the particle temperature becomes more homogeneous with increasing superficial gas velocity. Furthermore, instantaneous snapshots of the thermal driving force (the difference between the single particle temperature and bed-average gas temperature, Tp− ) for different heat production rates provide detailed insight in the particle temperature distribution inside the fluidized bed. The time- and bed-averaged particle convective heat transfer coefficient, which was calculated by Gunn׳s correlation, was found to be independent of the superficial gas velocity. This is explained by the fact that the relative velocity of gas and particles in the emulsion phase, where most of the particles and gas interact, is hardly influenced when increasing the gas superficial velocity. From the spatial distribution of Nusselt number, it becomes apparent that the high heat transfer regions are found in the wake of rising bubbles, whereas low heat transfer rates are found in the clouds of the bubbles.