Aluminum-free strained-layer lasers emitting at 1.14 μm on low-composition InGaAs:n substrates by metalorganic chemical vapor deposition
Broad-area (W=150 /spl mu/m) single-quantum-well (SQW) lasers have been successfully fabricated on n-type In/sub 0.03/Ga/sub 0.97/As substrates without incorporating aluminum-containing alloys. The strained-layer InGaP-GaAs-InGaAs heterostructure was grown by atmospheric pressure metalorganic chemical vapor deposition. Due to both the increased substrate lattice constant and the partial strain compensation supplied by the tensile-strained GaAs optical guiding layers, a peak emission wavelength of 1.1403 /spl mu/m is obtained for a 1-mm cavity length.
Optical and Electrical Characterization Melt-grown Bulk InGaAs and InAsP
Optical and electrical properties of bulk melt-grown ternary InAs1-yPy and InxGa1-xAs polycrystals were investigated as functions of phosphorus and indium compositions and temperatures using the photoluminescence, Fourier transform infrared (FTIR) transmission spectrum, refractive index, and Hall-effect measurements. These ternary alloys were grown using the vertical Bridgman techniques. The as-grown undoped bulk ternary InAs1-yPy and InxGa1-xAs polycrystals have been found to exhibit n-type conductivity irrespective of the alloy compositions possibly due to residual impurities and native defects. In general, carrier concentrations and Hall mobilities increase with the indium composition for InxGa1-xAs, whereas they decrease with increasing phosphorus mole fraction for the InAs1-yPy sample. The FTIR spectra of all these ternary samples demonstrated good infrared transmission. A systematic measurement of photoluminescence was carried out in order to gain insight into the various radiative transitions in the InAs1-yPy and InxGa1-xAs crystals, which include the temperature, laser excitation power, and sample location dependent studies. The wavelength, temperature, and composition dependent refractive indices of InAs1-yPy and InxGa1-xAs were studied using minimum deviation and Michelson Fabry-Perot interferometry methods. The measured results of refractive indices, transport properties, bandgap energies, and optical transmissions are presented here as functions of alloy composition, temperature and photon energy for the first time, to the best of our knowledge. Although the bulk InAs1-yPy and InxGa1-xAs samples show good optical
Anomalous Annealing Behavior of Arsenic Implanted Silicon as a Function of Dose and Energy
Anomalous annealing behavior of damage in As implanted Si has been investigated by channeling effect measurements. Room temperature As implants with doses from 1014 to 2 × 1016cm-2 at energies ranging from 50 to 250 keV into Si were annealed over the range of 600°C to 1100°C. Anneal temperatures ≥ 950°C reduce the disorder for ion doses of 0.5 to 1 × 1016 cm-2 at energies between 50 and 250 keV. Anomalously high residual disorder was found for the intermediate doses of 2 × 1014 to 2 × 10/cm2 implanted above 100 keV. For this intermediate dose, annealing of implants performed at liquid nitrogen temperatures did not show significant reduction in this damage. However implants at 200° to 300°C indicate a lower amount of damage compared to the room temperature implants.