Symmetric 10G-EPON ONU transceiver integrated with newly-developed burst-mode pre-bias timing control IC
We developed symmetric 10G-EPON ONU transceiver fully compliant with IEEE802.3av PR30. Output power of +5 dBm, sensitivity of -32.4 dBm, and fast LD turn-on/off time of 10 ns/7 ns were successfully achieved by newly-developed burst-mode pre-bias timing control IC.
Demonstration of 10G-EPON and GE-PON Coexisting System Employing Dual-Rate Burst-Mode 3R Transceiver
In this letter, a novel 10 gigabit Ethernet passive optical network (10G-EPON) optical line terminal (OLT) dual-rate burst-mode reshaping, retiming, and regenerating transceiver was, for the first time, reported to completely meet the IEEE802.3 av 10G-EPON standards where the coexisting of 10G-EPON and gigabit Ethernet passive optical network (GE-PON) systems on the same fiber plant is specified. Newly developed 10G/1G dual-rate burst-mode avalanche photodiode preamplifier and dual-rate 82.5-GS/s burst-mode clock and data recovery achieved the high receiver sensitivity and the wide burst dynamic range of -31.2 dBm/25.2 dB (at bit-error rate (BER) = 1 X 10-3) for 10.3 Gb/s and -35.6 dBm/26.3 dB (at BER = 1 x 10-12) for 1.25 Gb/s. Moreover, 10G-EPON and GE-PON coexisting system of 32 x optical network units with loss budget of 33.5 dB was successfully demonstrated.
Investigating the Optical properties of cd1-xznxs thin films deposited by the Dip Technique
A Thesis submitted to the Department of Physics, Kwame Nkrumah University of Science and Technology, in partial fulfillment of the requirement for the degree of 
Master of Science (Solid State Physics)