The theory of the scattering-induced feeding-in in bent crystals
Abstract An analytical theory for the efficiency of scattering-induced transitions from a random to a channeled state (feed-in) in bent crystals is derived. The predictions from the theory are in good agreement with experiment and Monte Carlo simulations.
On measuring 70 GeV proton dechanneling lengths in silicon crystals (110) and (111)
Abstract Measurements of 70 GeV proton dechanneling lengths in silicon crystals (110) and (111) are described. The agreement of the obtained results with the predictions of diffusion theory, Monte Carlo simulations and experimental data at other energies is shown.
Neurorehabilitation: A Disciplined Disciplining Discipline
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