Preparation and Characteristics of Cloth Inductor
A cloth inductor consisting of mechanically interwoven amorphous ferromagnetic fibers and conducting fibers is described, and the inductor characteristics reported for various fiber lengths, diameters, and weaving patterns. The inductance L increases nearly in proportion to the fiber length, and in proportion to the second power of the amorphous fiber diameter and the second power of the number of conducting fiber turns per unit length, as expected. The leakage flux and total inductance also depend on the relative flux orientations of neighboring amorphous fibers.
Sputter deposition and read/Write characteristics of Ba-ferrite thin film disk
The nucleation mechanisms and the composition change in Ba ferrite films deposition by means of the Targets Facing Type of Sputtering system have been discussed in detail. In addition, an attempt to control their magnetic properties has been made and read/write characteristics of the films prepared on the disk substrates have been evaluated. The single phase Ba ferrite films composed of fine graines are deposited epitaxially on the c-axis well oriented ZnO layer even in the nucleation stage under a wide range of preparation conditions. Moreover, the film composition, the crystal structure and the magnetic properties depend strongly on oxygen partial pressure. The films sputtered from the targets of n=5 and 6 in the BaO.nFe203 system exhibit good crystallographic and magnetic properties under the wider range of sputtering conditions. The coercive force Hc can be decreased without increasing the critical temperature of c-axis orientation by substitution of In3+for Fe3+. Furthermore, the D50 increases and overwrite decreases with increase of In3+content. Consequently, high density perpendicular recording with D 50 of 88 kFRPI has been achieved by using a narrow gap (0.4 μm) ring head.
Formation of Ba-ferrite films with perpendicular magnetization by targets-facing type of sputtering
Ba-ferrite films have been prepared by means of Targets-Facing type of sputtering method which is very useful to prepare magnetic films at high rate without any bombardment of high energy particles such as γ-electrons and negative ions emitted from the targets and is favorable to obtain stoichiometric films of good quality. C-axis orientation of the films depends strongly on substrate temperature and crystal structure of substrate. C-axis well oriented BaM films are deposited on amorphous materials such as a-SiO 2 . The deposited films of 3000 A in thickness have ΔΘ 50 less than 1 degree, magnetic anisotropy constant of 3.2\times10^{6} erg/cc, saturation magnetization of 380 emu/cc and coercive force of 1.3 kOe. These films reveal much better c-axis orientation and surface smoothness than the films deposited by DC diode type of sputtering method and have almost the same composition as that of the targets.