Characterization of Ion Implanted Silicon Annealed with a Graphite Radiation Source
A Varian IA-200 isothermal annealer has been used to anneal ion implantation damage and electrically activate dopants in As and B implanted silicon with minimal redistribution of the impurity. The anneal occurs in vacuum using infrared radiation from a resistively heated sheet of graphite. Good quality anneals of /sup 11/B implanted samples have been obtained with minimal boron diffusion. Arsenic implanted wafers have also be annealed with excellent results except for a substantial loss of As which occurs unless the wafer has an SiO/sub 2/ cap. The anneal quality of (100) wafers was independent of dose, however, the anneal quality of the (111) wafers improved with increasing As dose.
Redistribution of dopants in ion‐implanted silicon by pulsed‐laser annealing
The redistribution of B, P, As, and Sb implanted into single‐crystal silicon and subsequently laser annealed with a Q‐switched ruby laser has been studied by secondary‐ion mass spectrometry and ion backscattering. Substantial alteration of the as‐implanted profiles occurs, which is pulse‐energy‐density dependent. The altered profiles are in good agreement with theoretical calculations to be presented in a subsequent paper which show that redistribution occurs as a result of diffusion in the molten state.
Pulsed-electron-beam annealing of ion-implantation damage
Short‐duration high‐intensity pulsed electron beams have been used to anneal ion‐implantation damage in silicon and to electrically activate the dopant species. Lattice regrowth and dopant activation were determined using 4He+ backscattering, SEM, TEM, and device performance characteristics as diagnostic techniques. The annealing mechanism is believed to be liquid‐phase epitaxial regrowth initiating from the substrate. The high‐temperature transient pulse produced by the electron beam causes the dopant to diffuse rapidly in the region where the liquid state is achieved.