Experimental study of temperature sensitivity of carrier lifetime and recombination coefficients in GaInNAs SQW lasers
This paper deals with the characterization of the differential carrier lifetime and the calculation of the monomolecular, radiative and non-radiative recombination coefficients and their temperature dependence as an evidence of the excellent temperature performance of this material system. The device characterized is a 1.25 /spl mu/m GaInNAs laser structure grown on a GaAs substrate. The active region consists of a single 6 nm thick single quantum well. Light current (L-I) characteristics performed over a temperature range of 20/spl deg/C to 80/spl deg/C, show a characteristic temperature of 50 K. Similar than in the case of commercial InGaAs. Good temperature performance of optical gain using Hakki-Paoli method, lasing wavelength and efficiency will also be presented and compared with modelling work.
Gain in 1.3 μm materials: InGaNAs and InGaPAs semiconductor quantum-well lasers
The absorption and gain for an InGaNAs/GaAs quantum-well structure is calculated and compared to that of a more conventional InGaAs/InGaPAs structure, both lasing in the 1.3 μm range. Despite significant differences in the band structures, the gain value is comparable for high carrier densities in both structures and the transition energy at the gain maximum shows a similar blueshift with increasing carrier density. For low and intermediate carrier densities, the calculated gain in the InGaPAs system is significantly lower and the bandwidth smaller than in the InGaNAs system.
Integrating Al with NiO nano honeycomb to realize an energetic material on silicon substrate
Nano energetic materials offer improved performance in energy release, ignition, and mechanical properties compared to their bulk or micro counterparts. In this study, the authors propose an approach to synthesize an Al/NiO based nano energetic material which is fully compatible with a microsystem. A two-dimensional NiO nano honeycomb is first realized by thermal oxidation of a Ni thin film deposited onto a silicon substrate by thermal evaporation. Then the NiO nano honeycomb is integrated with an Al that is deposited by thermal evaporation to realize an Al/NiO based nano energetic material. This approach has several advantages over previous investigations, such as lower ignition temperature, enhanced interfacial contact area, reduced impurities and Al oxidation, tailored dimensions, and easier integration into a microsystem to realize functional devices. The synthesized Al/NiO based nano energetic material is characterized by scanning electron microscopy, X-ray diffraction, differential thermal analysis, and differential scanning calorimetry.