A simple Flash memory cell model for transient circuit simulation
A simple Flash memory cell model for circuit simulation is presented. The proposed model gives an excellent fitting of dc and transient data and does not require additional simulation time comparing with that of a MOSFET transistor. Effective control-gate voltage method and ideal current-mirror technique are introduced to calculate floating-gate voltage. These allow macro modeling of a Flash memory cell in a circuit simulator.
Modeling strategies for flash memory devices
In this paper, we will review the modeling strategies for standard and advanced Flash memory devices based on Floating Gate devices developed by our research group in the last ten years. We will show a complete compact model that includes program/erase and leakage currents that can be used to simulate memory cells in both DC (read operation) and transient conditions (Program/Erase). The same model can be used also for reliability simulations by providing good descriptions of the degradation mechanisms. We will also show the extended model for circuit simulation of NAND strings, modified to account for capacitive coupling effects. Finally, we will show how the same framework can be used to develop a compact model for operations of advanced planar charge-trapping memory devices.
Balloon assisted translocation of the mitral anterior leaflet to prevent left ventricular outflow obstruction (BATMAN): A novel technique for patients undergoing transcatheter mitral valve replacement
Transcatheter mitral valve replacement (TMVR) is an option for patients at high risk for mitral valve replacement or repair via sternotomy or left thoracotomy approach. TMVR carries up to 22% risk of left ventricular outflow tract (LVOT) obstruction. Severe LVOT obstruction can have devastating hemodynamic and clinical consequences.