Mexico's 'Commission for the Defense of the Spanish Language' (1981-82)
This paper focuses on one of the most intriguing and short-lived corpus language planning efforts in the history of Mexican Spanish—the Comision Para La Defensa del Idioma Espanol (Commission for the Defense of the Spanish Language). Formed in 1981 and disbanded the next year, the Commission’s concentration during its short tenure was the cleansing of Mexican Spanish grammar of so-called errors as well as the Mexican Spanish lexicon of English borrowings. Those linguists who worked on the Commission were both prescriptive as well as descriptive in perspective, and hence some very valuable linguistic work resulted. This paper compares some of the Commission’s findings with the state of English borrowing in Mexican Spanish today.
Ortografía de la lengua española
Nueva edicion revisada, actualizada y ampliada de una de las obras troncales de la Real Academia Espanola. La nueva "Ortografia de la lengua espanola" presenta unas caracteristicas propias que la hacen mas solida, exhaustiva, razonada y moderna que su predecesora, editada en 1999: 1. Es mas descriptiva, detallada y explicita, con el fin de solucionar muchos problemas concretos que se les plantean a los hablantes. 2. Es accesible a cualquier hablante alfabetizado, pues evita en lo posible tecnicismos y expresiones de dificil comprension. 3. Es una ortografia razonada. 4. Es una ortografia moderna, pues incluye apartados novedosos como los dedicados a la ortotipografia. 5. Es una ortografia moderadamente reformista. 6. Es una ortografia didactica. 7. Es una ortografia panhispanica, concebida y realizada desde la unidad y para la unidad de la lengua.
Anomalous Annealing Behavior of Arsenic Implanted Silicon as a Function of Dose and Energy
Anomalous annealing behavior of damage in As implanted Si has been investigated by channeling effect measurements. Room temperature As implants with doses from 1014 to 2 × 1016cm-2 at energies ranging from 50 to 250 keV into Si were annealed over the range of 600°C to 1100°C. Anneal temperatures ≥ 950°C reduce the disorder for ion doses of 0.5 to 1 × 1016 cm-2 at energies between 50 and 250 keV. Anomalously high residual disorder was found for the intermediate doses of 2 × 1014 to 2 × 10/cm2 implanted above 100 keV. For this intermediate dose, annealing of implants performed at liquid nitrogen temperatures did not show significant reduction in this damage. However implants at 200° to 300°C indicate a lower amount of damage compared to the room temperature implants.