Hindered molecular reorientation of lithium ion doped succinonitrile in the terahertz range
The THz range permittivity of succinonitrile exhibits Debye-like behavior in its plastic-crystal phase, with a characteristic Cole-Cole relaxation time of 65ps ±17ps which increases considerably in the presence of ionic dopants.
Molecular reorientation rates in crystals by anisotropic light scattering
The rate of molecular reorientation in a crystal has been measured for the first time from the spectrum of scattered light using the same techniques that have previously been used for liquids. The molecular reorientational correlation time for succinonitrile in the plastic crystal phase at 19°C is found to be 4.0 × 10-11 s which is in good agreement with the value 4.4 × 10-11 s found by nuclear magnetic resonance. The method is thought to be of wide application.
Photoreflectance characterization of vanadium-doped GaAs layers grown by metalorganic vapor phase epitaxy
Abstract We characterized the vanadium-doped (GaAs:V) layers grown on GaAs substrate by metalorganic vapor phase epitaxy. The conductivity of the samples is checked by the Hall effect measurements, and it is n type with electrons concentration ranging from 2×10 13 to 2×10 17  cm −3 . We used the photoreflectance technique (PR) to study the effect of vanadium doping on the optical properties of GaAs. Our experimental results show that the built-in electric field F and the broadening parameter Γ 0 increase with V-doping concentration. Furthermore, the temperature dependence of the built-in electric field and the broadening parameter of GaAs:V samples have been investigated by PR. It has been observed that these parameters increase with increasing temperature. The decrease of the built-in electric field with decreasing temperature is due to the photovoltage effect.We characterized the vanadium-doped GaAs (GaAs:V) layers grown on GaAs substrate by metalorganic vapor phase epitaxy.