Characterization of CdTe/n$^{+}$ -Si Heterojunction Diodes for Nuclear Radiation Detectors
CdTe/n+-Si heterojunction diodes were fabricated and characterized for the development of gamma ray detectors. With the careful control of the growth parameters thick single crystal CdTe epilayers of high-crystalline quality were grown directly on the (211) Si substrates in a metalorganic vapor phase epitaxy. The heterojunction diode was fabricated by growing a 5 mum thick n-type CdTe buffer layer on the n+-Si substrate, followed by the growth of 100 mum thick undoped p-CdTe layer. The diode fabricated showed very good rectification property with a low value of the reverse bias leakage current, typically 1.26 times 10-7 A/cm2 for an applied reverse bias of 60 V. The diode clearly demonstrated the gamma radiation detection capability by resolving energy peaks from the 241Am radioisotope during the radiation detection test performed at room
VIPPIX: A readout ASIC for the next generation of human brain PET scanners
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Photoinduced spin-state transition of Co3+ in the layered perovskite manganite thin film
The photoinduced effect, at different temperatures, on layered perovskite manganite La1.2Sr1.8Mn1.8Co0.2O7 thin film deposited on a SrTiO3(100) substrate has been studied using a He–Ne laser (632.8 nm) with the power of output 25 mW at low temperatures. The electrical transport and magnetic properties of the film are investigated systematically in the temperature region from 20 to 300 K. The resistance shows a significant decrease at low temperatures (T<90 K) under laser irradiation, which can be interpreted in terms of the spin-state transition of Co3+ ions. The magnetic field combined with the laser is also used to detect the photoinduced effect of the spin-glass state. The time dependence of the metastable system under several applied fields was also discussed. The system has the ability to keep a persistent memory of the magnetic history imprinted in its zero-field resistance.