New photoluminescence lines in Vanadium doped GaAs grown by MOVPE
We examined the electrical and optical properties of vanadium-doped GaAs grown by metalorganic vapour phase epitaxy using vanadium tetrachloride (VCl4) as a novel dopant source. Samples with various vanadium incorporations were investigated. All samples were n type. The electron concentration dependence on the VCl4 flow rate was established. At 15 K, by comparison with undoped layers grown in the same conditions, photoluminescence spectra of V-doped exhibited three new emission bands: at 1.41, 1 and 0.72 eV. The 1 and 0.72 eV band emissions were attributed to V 2þ and V 3þ intracenter emission, while the 1.41 eV band was suggested to be a donor-bound transition. The identity of the donor is tentatively attributed to a donor complex that associates vanadium to an arsenic vacancy. From Hall effect as function of temperature, the donor ionisation energy was estimated to be about 102 ^ 5 meV. q 2003 Elsevier Science Ltd. All rights reserved.
Photoreflectance characterization of vanadium-doped GaAs layers grown by metalorganic vapor phase epitaxy
Abstract We characterized the vanadium-doped (GaAs:V) layers grown on GaAs substrate by metalorganic vapor phase epitaxy. The conductivity of the samples is checked by the Hall effect measurements, and it is n type with electrons concentration ranging from 2×10 13 to 2×10 17  cm −3 . We used the photoreflectance technique (PR) to study the effect of vanadium doping on the optical properties of GaAs. Our experimental results show that the built-in electric field F and the broadening parameter Γ 0 increase with V-doping concentration. Furthermore, the temperature dependence of the built-in electric field and the broadening parameter of GaAs:V samples have been investigated by PR. It has been observed that these parameters increase with increasing temperature. The decrease of the built-in electric field with decreasing temperature is due to the photovoltage effect.We characterized the vanadium-doped GaAs (GaAs:V) layers grown on GaAs substrate by metalorganic vapor phase epitaxy.
The peculiar thermo-structural behavior of the anionic lipid DMPG.
Aqueous dispersions of the anionic phospholipid dimyristoyl phosphatidylglycerol (DMPG), around 100 mM ionic strength, are known to exhibit a thermal behavior similar to that of the largely studied lipid dimyristoyl phosphatidylcholine (DMPC), which undergoes a gel to liquid crystalline phase transition at 23 degrees C, well characterized by differential scanning calorimetry (DSC), and other methods. However, at low ionic strength, DMPG has been shown to present a large gel-fluid transition region, ranging from 18 to 35 degrees C. This intermediate phase is optically transparent and characterized by a continuous change in membrane packing. Structural properties of the DMPG gel-fluid transition region will be discussed, based on results obtained by several techniques: electron spin resonance (ESR) of spin labels at the membrane surface and intercalated at different depths in the bilayer; light scattering; DSC; small angle X-ray scattering (SAXS); and fluorescence spectroscopy of probes in the bilayer.