Suppression of defect propagation in semiconductors by pseudomorphic layers
The propagation of defects in semiconductor heterostructures has been studied both theoretically and experimentally. The simple model shows that defects originating from lattice‐matched regions can be prevented from entering, or can be trapped by, a pseudomorphic layer, depending on the signs of the strain induced by the defect and the strain in the pseudomorphic layer. A pseudomorphic layer can therefore prevent the defect from propagating across in and entering the critical active region of a device. Experimentally, the photoluminescence intensities of Al0.4Ga0.6As/GaAs quantum wells with and without pseudomorphic In0.2Ga0.8As layers for prevention of defect propagation have been compared. GaAs substrates of high etch pit density were used to generate defects below the quantum well and silicon implantation was used to generate defects above it. The elevated temperatures during molecular‐beam‐epitaxial growth and postimplant rapid thermal annealing serve to assist in defect propagation in the respective ...
High-power, high-temperature operation of AlInGaAs-AlGaAs strained single-quantum-well diode lasers
Strained layer AlInGaAs-AlGaAs graded-index separate-confinement heterostructure single-quantum-well diode lasers with cavity width and length of 500 and 1000 mu m, respectively, have been operated continuous-wave (CW) at heatsink temperatures up to 125 degrees C, with output power up to 4.9 W per facet and power efficiency as high as 49% measured at 10 degrees C. Promising results have been obtained in initial reliability tests on uncoated devices at heatsink temperatures of 10 and 50 degrees C.<<ETX>>
Traceability strategy for gear-pitch-measuring instruments: development and calibration of a multiball artifact
There is a strong demand to ensure the traceability of gear-measuring instruments (GMIs). We propose a multiball artifact (MBA) for the evaluation of pitch-measuring accuracy. The aim of the MBA is to transfer the minimum uncertainty from a calibrated value at the National Metrology Institute of Japan (NMIJ) to a measured value of GMIs at a shop floor. The MBA is composed of equally spaced high-accuracy balls around an axis. The pitch-measuring accuracy of GMIs is evaluated by measuring the angular pitch deviation of the balls instead of the angular pitch deviation of a gear. We calibrated the angular pitch deviation using a coordinate measuring instrument (CMM) at the NMIJ and adapting a multiple-orientation technique. We proposed a calibration strategy of the angular pitch deviation. The calibration value of the pitch deviation for the MBA at the NMIJ was obtained with a measurement uncertainty (U95) of 0.2 µm. We evaluated the pitch-measuring accuracy of a GMI using the calibrated MBA. Each value of U95 for the cumulative and single pitch deviations for the left and right flanks was less than or equal to 0.5 µm. The small uncertainty was transferred from the NMIJ to the GMI.