III-V Photonic Integration Outside Telecommunications - Does InP Have A Role?
Photonic products are now appearing that make extensive use of monolithic 
integration in III-V semiconductors. Many products use GaAs-based alloys 
either because the operation wavelength is important or because the physical 
properties of such alloys result in improved performance. Integration activity 
will be reviewed and the role for InP analysed.
High extinction ratio GaAs/AlGaAs electroabsorption modulators integrated with passive waveguides using impurity-free vacancy diffusion
Electroabsorption optical modulators integrated with passive waveguides have been fabricated on GaAs/AlGaAs multiquantum well material using the impurity-free vacancy diffusion technique with SrF2 and SiO2 capping layers. At a wavelength of 861.6 nm, devices with a 400 µm long modulator section showed ON/OFF ratios greater than 35 dB for a reverse bias voltage of 3 V.
Layer selective disordering by photoabsorption-induced thermal diffusion in InGaAs/InP based multiquantum well structures
Laser-induced intermixing of a buried InGaAs/InGaAsP multiquantum well structure using a CW Nd : YAG laser, operating at a wavelength of 1064 nm, has been demonstrated. The process does not involve transient melting of the semiconductor, but relies on preferential absorption by the active region producing sufficient heat to cause intermixing between the wells and barriers. Photoluminescence measurements at 77 K indicate that bandgap shifts as large as 123meV are obtainable using moderate laser beam power densities and periods of irradiation.