The nuclear magnetic moment of "Ir and the directional distribution of gamma rays in "Os
Angular distributions of gamma transitions between levels in I9OOs fed in the decay of I9'Ir aligned in a rhenium single crystal have been measured at temperatures down to 2 mK. Multipole mixing ratios in both gamma and electron-capture transitions are deduced and compared with various nuclear models. The angular distribution coefficients are applied to interpret very small anisotropies observed when I9'Ir is polarised in an iron host matrix, cooled to 2.5 mK. The deduced magnetic dipole moment of the 4 + ground state of I9'Ir is Ip(I9'Ir; GS)~ = 0.04( l)pN. Possible single-particle descriptions compatible with this result are suggested. NUCLEAR MOMENTS: I9'Ir (from Re(a, n)): measured I,(@ from oriented nuclei in single crystal Re and polycrystalline Fe: deduced I9OOs S(E2/M1), Jp in electron capture, lpl(1901r ground state).
Levels of 190Os populated in the decays of 3.3 h 190mRe and 12 d 190Ir and in the 189Os(d, p)190Os reaction
Abstract The level structure of 190 Os has been investigated by the techniques of radioactive decay and neutron transfer reaction spectroscopy. The existence of 3.3 h 190m Re has been confirmed; it decays ≈ 49% by isomeric transitions and ≈ 51% by β − decay to levels in 190 Os with spins $ = 5 . In a re-investigation of the 12 d 190 Ir decay, a virtually complete decay scheme has been established and discrepancies between the I π values assigned to several 190 Os levels by earlier workers have been resolved. The reaction 189 Os(d, p) 190 Os has been studied and information about the locations of two-quasiparticle states involving the 3 2 [512]ν orbital and about the microscopic compositions of collective excitations has been derived. Various aspects of the 190 Os level structure are discussed in the light of the combined radioactivity and transfer reaction results.
The Chemistry of the Semiconductor Industry
Overview. Semiconductor silicon. Group III-V compounds. Group II-VI semiconductors. Chemical vapour deposition. Plasma-enhanced chemical vapour deposition. Metal-organic vapour phase epitaxy. Liquid-phase epitaxy of III-V compounds. Photoresists. X-ray and E-beam resists. Wet etching. Polyimides. Molecular electronics. Computer modelling. Plasma etching. Polymers in plasmas.