Radiation-Hardened Performance-Optimized I2L LSI
Experimental data and theoretical calculations are presented on the effects of neutron irradiation on I2L circuits. It is shown that neutron-induced degradation of I2L gate performance can be theoretically predicted with reasonable accuracy. Operation of custom designed I2L 32-bit serial shift registers to a neutron fluence level of 1 × 1014n/cm2 is demonstrated. Shift register data are also given from total dose gamma and transient upset radiation experiments with thresholds exceeding 3 × 106rads(Si) and 2 × 109rads(Si)/s, respectively.
Schottky-base I/sup 2/L: a high-performance LSI technology
A new I/SUP 2/L technology is described which offers significant advantages in packing density, device performance, and reduced LSI circuit complexity as compared to the conventional I/SUP 2/L. The basic logic gate in this design is a multiinput, multioutput NAND gate which consists of a p-n-p switch and an n-p-n injector. Schottky diodes are formed on the p-n-p base which is merged with the n-p-n (injector) collector. This I/SUP 2/L technology also offers convenient interfacing with other standard IC parts. Experimental data on a test chip indicate a p-n-p current gain of ~50, TTL-type n-p-n current gain of ~80, a delay-power product of 0.5 pJ, and a minimum delay of 10 ns for devices using 7.5 /spl mu/m minimum linewidths.
Stability results for the solutions of some third and fourth order differential equations
SummaryThe paper investigates conditions under which solutions of the equations (1) and (2) of § 1.1 tend to zero as t → ∞.