High k/III-V structures: Interfaces, oxides quality and down scaling
In this paper, we present our studies on high k/InGaAs and high k/InSb structures, focusing on the interfaces, oxides qualities as well as down scaling the gate oxide. We indicate the free movement of Fermi level in both kinds of n- and p-InGaAs MOSCAPs. The effect of gases plasma treatments in the improvement of gate oxides as well as high k/InGaAs interface quality is also discussed. For high k/InSb structure, the effect of post deposition annealing temperatures on electrical properties of this structure is presented. Finally, we present our efforts on down scaling the equivalent oxide thickness of these structures into sub-nm size.
Electrical Characterization of $\hbox{Al}_{2} \hbox{O}_{3}$/n-InAs Metal–Oxide–Semiconductor Capacitors With Various Surface Treatments
Ex situ sulfide and HCl wet chemical treatments in conjunction with in situ trimethyl aluminum (TMA) pretreatment were performed before the deposition of Al2O3 on n-InAs surfaces. X-ray photoelectron spectroscopy analyses show a significant reduction of InAs native oxides after different treatments. The capacitance-voltage C- V characterization of Al2O3/n-InAs structures shows that the frequency dispersion in the accumulation regime is small (<; 0.75%/dec) and does not seem to be significantly affected by the different surface treatments, whereas the latter improves depletion and inversion behaviors of the n-channel metal-oxide-semiconductor capacitors. The interface trap density profiles extracted from the simulation mainly show donorlike interface states inside the InAs band gap and in the lower part of the conduction band. The donorlike traps inside the InAs band gap and in the lower part of the conduction band were significantly reduced by using wet-chemical-plus-TMA treatments, in agreement with C-V characteristics.
Study of the inversion behaviors of Al2O3/InxGa1−xAs metal–oxide–semiconductor capacitors with different In contents
Abstract In x Ga 1− x As III–V compound semiconductor metal–oxide–semiconductor field-effect transistors have become a popular topic recently due to the higher drift velocity, and lower effective mass of the In x Ga 1− x As materials. The impact of In content on the accumulation and inversion behaviors of the Al 2 O 3 /In x Ga 1− x As capacitors is investigated in this study. For the various In x Ga 1− x As materials studied, the Al 2 O 3 /InAs MOS system showed the strongest inversion phenomena due to the shorter response time of minority carrier of InAs compared to other In x Ga 1− x As materials. Also, very low gate leakage current in the 10 −8  A/cm 2 range was observed for these capacitors. These results demonstrate that Al 2 O 3 /InAs MOS system with strong inversion phenomena and low leakage gate current is potential candidate for future high-performance low power logic MOSFET applications.