Development of InSb dry etch for mid-IR applications
We present a new chlorine-free dry etching process which was used to successfully etch indium antimonide grown on gallium arsenide substrates while keeping the substrate temperature below 150°C. By use of a reflowed photoresist mask a sidewall with 60degree positive slope was achieved, whereas a nearly vertical one was obtained when hard masks were used. Long etch tests demonstrated the non-selectivity of the process by etching through the entire multi-layer epitaxial structure. Electrical and optical measurements on devices fabricated both by wet and dry etch techniques provided similar results, proving that the dry etch process does not cause damage to the material. This technique has a great potential to replace the standard wet etching techniques used for fabrication of indium antimonide devices with a non-damaging low temperature plasma process. Display Omitted Chlorine-free low-temperature dry etch of MBE grown InSb on GaAs60° positive sloped or nearly vertical etch depending on maskNon-selective process etching through Insb, GaSb and GaAsLow damage process with potential to replace standard InSb wet etch
Electrical Characteristics of ${\rm Al}_{2}{\rm O}_{3}/{\rm InSb}$ MOSCAPs and the Effect of Postdeposition Annealing Temperatures
The characteristics of Al2O3/InSb MOSCAPs processed with different postdeposition annealing (PDA) temperatures are investigated. X-ray photoelectron spectroscopy analysis shows a significant reduction of InSb-oxides after HCl plus trimethyl aluminum treatment and oxide deposition. Multifrequency capacitance-voltage (C-V) characteristics exhibit low-frequency and asymmetrical C-V behaviors, in which capacitance in the InSb conduction band side is lower than in the valence band side. The electrical properties of the MOSCAPs are sensitive to PDA temperature and degraded significantly at PDA temperature >300 °C. This degradation is closely related to the diffusion of In, Sb into Al2O3 as indicated by transmission electron microscopy analyses.
Persius and the Programmatic Satire: A Study in Form and Imagery
Introduction 1. Style and expression in Persius' fifth satire 2. The programmatic satire and the method of Persius I 3. The nature and sources of Persius' imagery 4. Persius' first satire: analysis 5. Grandeur and humility: Juvenal and the high style Appendixes Text Translation Index of modern authors Index locorum potiorum Index of images, topics and words.