Watermark induced High Density Via failures in sub micron CMOS fabrication
High via resistance was detected in the high density via structure in our 0.15 mum BEOL (Back-End-Of-Line) yield monitoring test vehicle. A localized insulating layer was found on top of plug in test vehicle causing high via resistance. The failure was attributed to watermark induced contaminants on top of the W plug. It was shown that the failure could be avoided by eliminating watermark formation on the wafer in the post CMP cleaning process.
Development of spin-on-glass process for triple metal interconnects
Spin-on-glass (SOG), an interlayer dielectric material applied in liquid form to fill narrow gaps in the sub-dielectric surface and thus conducive to planarization, is an alternative to silicon dioxide (SiO2) deposited using PECVD processes. However, its inability to adhere to metal and problems such as cracking prevent the easy application of SOG technology to provide an interlayer dielectric in multilevel metal interconnect circuits, particularly in university processing labs. This paper will show that a thin layer of CVD SiO2 and a curing temperature below the sintering temperature of the metal interconnect layer will promote adhesion, reduce gaps, and prevent cracking. Electron scanning microscope analysis has been used to demonstrate the success of the improved technique. This optimized process has been used in batches of double-poly, triple-metal CMOS wafer fabrication to date.
Production of xylanase by Aspergillus awamori on complex medium in stirred tank and airlift tower loop reactors
Abstract Aspergillus awamori was cultivated on complex medium containing wheat bran as sole carbon source in the precultures as well as in the main cultures in stirred tank and airlift tower loop reactors. The decomposition of the wheat bran particles by α -amylase and xylanase produced by the fungus was investigated by monitoring the enzyme activities, the CO 2 production rate, the concentrations of reducing sugars, glucose, xylose, phosphate and ammonium as well as by applying transmission electron microscopy. By applying synthetic medium in the preculture, the time lag was longer, the growth faster, the xylanase activity higher in the main culture, than by using wheat bran in the preculture. With increasing the stirrer speed the intimate contact between the pellets and the wheat bran was reduced, which caused a decrease of the growth and the xylanase production. By applying ground wheat bran, filamentous mycelium was formed, the growth and the substrate uptake rates increased, but the xylanase production decreased due to the less intimate contact between the fungus and the wheat bran. In the airlift tower loop reactor filamentous mycelium was formed due to the low specific power input. In spite of the high medium viscosity, high xylanase productivity was obtained. With ground wheat bran the particles were completely covered by filamentous mycelium, medium viscosity strongly increased and as consequence the growth and xylanase production decreased.