Research on Force and Thermal Phenomena of Short Circuited Melted Mark in Electrical Fire
This paper mainly does a research on force and thermal phenomena of short circuited melted mark in electrical fire. The primary short circuited melted mark and secondary short circuited melted mark were prepared by the experiment, and were characterized by metallographic microscope, powder X-ray diffraction, scanning electron microscope and energy dispersive spectroscopy, the role of forces and heat in short circuited melted mark in electrical fire were demonstrated and investigated. It is found that they show a similar shape that the melted ball close to one side for anode melted marks, and their particles show the specific and uniform direction and the most particle size of anode melted marks are larger than the particle size of cathode melted marks, both below the copper wire grain size 64.2nm, similarly, it can be clearly seen that the ratio of O: Cu in deposit layer of all melted marks are below 0.5. Finally, these above special phenomena gave short circuited melted mark the primary statement from the theoretical point of view.
Interface-controlled Gd2O3/GaAs system for ferroelectric memory application☆
Abstract The formation of Gd 2 O 3 /substrate-GaAs structure was accomplished by two-step electron-beam (e-beam) deposition including ultra-thin Gd-metal and successive Gd 2 O 3 layers. The deposition was carried out on HCl-cleaned GaAs containing elemental As on it. The pre-deposition of Gd-metal removes elemental As state in GaAs surface and forms interfacial state free from GaAs-oxides. However, Gd-metal turns to be oxide during the deposition by absorbing oxygen from GaAs surface and atmosphere. The successive deposition of Gd 2 O 3 was performed with in situ anneal of the substrate and this permitted preferential growth of Gd 2 O 3 with oriental relationship with substrate GaAs as Gd 2 O 3 {1 1 1}〈1 1 0〉||GaAs{0 0 1}〈4 7 0〉 with less than 1.5% of lattice mismatching. Capacitance–voltage ( C – V ) and current density–voltage ( J – V ) measurements indicated that the interface was seriously degraded when the anneal temperature exceeded 600 °C. The feasibility of Gd 2 O 3 film as a buffer layer for ferroelectric-gate/GaAs structure was proved.
Laser raman studies on carbons
Laser Raman spectra were studied of natural graphite (SP-1) and carbonaceous materials including pyrolytic graphite, carbon black, glassy carbon, coal, “white” carbon and sputtered carbon. All of these carbons have two Raman bands at 1580 cm−1 and 1360 cm−1, except for natural graphite which has a single sharp Raman band at 1580 cm−1. The relative intensity of the 1360 cm−1 band to the 1580 cm−1 band and the half band width increase going from graphite through glassy carbon to carbon black. The 1360 cm−1 band in glassy carbon becomes sharper and stronger with the increase of heat-treatment temperature (HTT), while the addition of iron to the glassy carbon matrices results in a decrease in intensity and half band width of this band with increasing HTT and iron content. Sputtered carbon and “white” carbon, prepared from graphite irradiated by a high power laser, showed an additional broad band around 2140cm−1. This band is believed to originate from conjugated acetylenic bands (—CC—)n.