Properties and structure of AlSiN and AlSiON films
Magneto-optical disks employ rare earth-transition metal amorphous alloy films (RE-TM films) as recording films, therefore improvement of the corrosion resistance of such disks is an important problem which must be resolved to enable practical application. Development of protective layers for magneto-optical disks is important to improving corrosion resistance. Such protective layers must offer excellent protective performance, and must also have a large refractive index in order that a large Kerr effect enhancement be obtained. AlSiN and AlSiON films are being developed for use as protective films meeting these requirements. However, as yet not much is known about the structure, bonding states, and relation between composition and refractive index of such films. This article reports on the refractive indices, structures, and bonding states of AlSiN and AlSiON sputtered films.
Magneto-optical recording media with new protective films
Several ceramic films such as AlN, BN, SiN, SiO, SiO 2 , TiN, and newly developed AlSiN and AlSiON were studied with respect to protection against corrosion of the rare earth-transition metal film and the enhancement of the magneto-optical (MO) effect. The protective and optical properties were investigated as functions of sputtering parameters. The AlSiN and AlSiON films were found to be superior in these properties. For the TbFe films coated with one of these films on polycarbonate substrates, no appreciable change was observed in the MO properties for over 1200 h of aging at 80°C. X-ray diffraction and X-ray photoelectron spectroscopy analyses indicate that the AlSiN and AlSiON films should not be mere mixture of SiN, AlN, etc., but have characteristic binding structure. Their high ability of protection may result from this structure. Refractive index (n) depended on sputtering conditions, and it was high when prepared at low pressure and at high rf power. The AlSiN and AlSiON films exhibited high transparency and high n, and provided sufficient Kerr effect enhancement to the media.
Anomalous Annealing Behavior of Arsenic Implanted Silicon as a Function of Dose and Energy
Anomalous annealing behavior of damage in As implanted Si has been investigated by channeling effect measurements. Room temperature As implants with doses from 1014 to 2 × 1016cm-2 at energies ranging from 50 to 250 keV into Si were annealed over the range of 600°C to 1100°C. Anneal temperatures ≥ 950°C reduce the disorder for ion doses of 0.5 to 1 × 1016 cm-2 at energies between 50 and 250 keV. Anomalously high residual disorder was found for the intermediate doses of 2 × 1014 to 2 × 10/cm2 implanted above 100 keV. For this intermediate dose, annealing of implants performed at liquid nitrogen temperatures did not show significant reduction in this damage. However implants at 200° to 300°C indicate a lower amount of damage compared to the room temperature implants.