Aluminum-free strained-layer lasers emitting at 1.14 μm on low-composition InGaAs:n substrates by metalorganic chemical vapor deposition
Broad-area (W=150 /spl mu/m) single-quantum-well (SQW) lasers have been successfully fabricated on n-type In/sub 0.03/Ga/sub 0.97/As substrates without incorporating aluminum-containing alloys. The strained-layer InGaP-GaAs-InGaAs heterostructure was grown by atmospheric pressure metalorganic chemical vapor deposition. Due to both the increased substrate lattice constant and the partial strain compensation supplied by the tensile-strained GaAs optical guiding layers, a peak emission wavelength of 1.1403 /spl mu/m is obtained for a 1-mm cavity length.
Continuous wave operation of GaInNAs laser diode at room temperature
Summary form only given. We have succeeded in continuous wave (CW) operation of a GaInNAs single active layer QW laser diode at room temperature, for the first time. The use of GaInNAs greatly improved the high temperature performance of long-wavelength-range laser diodes. Thus, the applicatability of GaInNAs, which is a novel material for laser diodes used in optical-fiber communications, was demonstrated.
Dark-line observations in failed quantum well lasers
The electron‐beam‐induced current technique has been used to disclose dark‐line patterns in degraded AlxGa1−xAs quantum well lasers. At least four distinct types of pattern exist, each being characteristic of a particular device structure.