Growth study of chemical beam epitaxy of GaNxP1−x using NH3 and tertiarybutylphosphine
Abstract A study in the growth of GaN x P 1 − x epilayers by chemical beam epitaxy using tertiarybutylphosphine (TBP), ammonia (NH 3 ), and elemental Ga or triethylgallium is reported. Monitoring reflection high-energy electron diffraction (RHEED) intensity oscillations, we observe that both group-III- and group-V-induced incorporation rates are increased when NH 3 is introduced into a single cracker with TBP. From the difference in the periods of group-V-induced RHEED intensity oscillations, a 16% N incorporation is expected, but X-ray rocking curve measurement shows only 0.08% N. Using separate TBP and NH 3 crackers results in no enhancement in incorporation rates. We conclude that the cracking efficiency of TBP is increased with NH 3 co-injection.
A growth diagram for chemical beam epitaxy of GaP1−xNx alloys on nominally (001)-oriented GaP-on-Si substrates
A growth diagram for chemical beam epitaxy of GaP1−xNx alloys on nominally (001)-oriented GaP-on-Si substrates K. Ben Saddik,1, a) B. J. García,1, 2, b) and S. Fernández-Garrido1, 2, c) 1)Electronics and Semiconductors Group (ElySe), Applied Physics Department, Universidad Autónoma de Madrid, ES-28049 Madrid, Spain 2)Instituto Nicolás Cabrera, Universidad Autónoma de Madrid, ES-28049, Madrid, Spain
Surface structure of (100) GaP grown by gas source molecular beam epitaxy
In situ reflection high‐energy electron diffraction analysis was used to investigate the surface structure of the GaP epitaxial layers grown on (100) GaP substrates by gas source molecular beam epitaxy as a function of substrate temperature and V/III flux ratio. It was found that for GaP, column V and column III stabilized surfaces corresponded to the (2×4) and (4×2) reconstruction pattern, respectively, which is characteristic of most all III‐V binary compound semiconductors. In the transition region, however, the surface exhibited a ((19)1/2 ×4 reconstruction pattern. At substrate temperatures below 660 °C and 685 °C for P‐ and Ga‐stabilized surfaces, respectively, the surface structure was insensitive to temperature. Beyond 660 and 690 °C, the surface structure exhibited an exponential flux dependence with increasing substrate temperature.