Structural, optical and electrical properties of nanocrystalline TiO2 -- HfO2 thin films
In the present work the properties of mixed HfxTi1-xO2 solid solution thin films in metal-oxide-semiconductor (MOS) configuration have been studied. Thin films, were grown on monocrystalline silicon substrates using the low pressure hot target reactive sputtering from the Ti:Hf mosaic target. From optical transmission measurements the 3.42 (eV) bandgap of the thin films has been estimated. Electrical characterization of the prepared MOS structures shows classical capacitance- and current-voltage behaviors indicating medium-k gate oxide properties with the low leakage current
Microstructure and Optical Properties of TiO2 Thin Films Prepared by Low Pressure Hot Target Reactive Magnetron Sputtering
Abstract Thin films of TiO2 were deposited onto (1 0 0) oriented silicon and glass substrates using modified magnetron sputtering method. The method, among the others, consisted in employing low pressure of reactive gas (
VLA stereoscopy of solar active regions. 2: Altitude, relative motion, and center-to-limb darkening of 20 centimeter emission
A newly developed method of stereoscopic correlation is applied to solar radio maps at a wavelength of 20 cm. On the basis of stereoscopic correlations between radio maps obtained on 6 different days we establish the presence of 66 radio source components associated with 22 active regions. We find the following statistical results for active region source structures at 20 cm: 1. The observed lifetime is consistent with an exponential distribution having an e-folding time scale of greater than 18 days. 2. The average altitude of 20 cm sources is 25 +/- 15 Mm; 90% of the sources are found in heights less than 40 Mm. 3. The average diameter of discrete source structures is 48 +/- 15 Mm, implying a vertical/horizontal aspect ratio of q(sub A) approx. = 0.5. 4. No significant source motion has been found with respect to the standard differential rotation rate of Omega = 13.45 deg - ((3 deg (sin(exp 2)B)). 5. We find a statistical limb darkening, which can be described by the relation (T(sub B)(alpha))/T(sub B)(0)) = 0.4 + ((0.6(cos(exp 2) alpha)) for sources with T(sub B) greater than 0.5 MK. 6. The degree of source polarization is 15% +/- 10% and is independent of source location. 7. Bright sources (greater than or approximately equal to 0.5 MK), or equivalently, long-lived sources (greater than or approximately equal to 5 days) show a systematic variation of their altitude as function of the center-limb distance.