Negative-stiffness vibration isolation
A new kind of vibration isolator, which is base on negative-stiffness theory, is made out for nano manufacture. In this paper, vibration isolation theory is mentioned to further explain negative-stiffness, and then Euler Columns and another negative-stiffness structure are introduced. Furthermore, the stiffness expression is figured out. Finally, a negative-stiffness vibration isolator is made to prove the theory and experiments also shows that its nature frequency is 0.45Hz and can isolate 79% of vibration at 1.9Hz and 97% at 4.9 Hz.
Characteristic analysis of vibration isolation system based on high-static-low-dynamic stiffness
The purpose of this study is to investigate the characteristics of vibration isolation system with a single degree-of-freedom (SDOF) and a two-degree-of-freedom (2DOF) respectively based on the high-static-low-dynamic-stiffness (HSLDS). This model consists of a simple configuration connecting a vertical spring and a pair of oblique springs. The restoring force of the isolation system is approximated to linear and cubic stiffness by applying the Maclaurin series expansion. The dynamic equations of the SDOF and 2DOF are established for the harmonic force excitation. The frequency-amplitude response equation of the SDOF is obtained by employing the harmonic balance method (HBM) and is demonstrated in the classical Runge-Kutta method. The solution stability is ensured by applying the Floquet theory. Effects on the frequency response curves (FRCs) for the damping ratio and excitation amplitude are explored and discussed. The force transmissibility (FT) is defined to evaluate the vibration suppression capability. Effects on the FT of the SDOF and 2DOF for the excitation amplitude, mass ratio, and damping ratio are investigated. An experimental investigation of the SDOF is carried out to evaluate the actual attenuation performance in comparison with the equivalent linear system (ELS). The simulation and experimental results show that the HSLDS system with harmonic force excitation demonstrates hardening stiffness with multi-valued solutions. The occurrence of jump phenomenon is observed and explained by the stiffness variation. The system response and resonance frequency are affected by the excitation amplitude and damping ratio. The HSLDS system outperforms the ELS in a low frequency range if an appropriate mass is mounted. It is excited by a proper force and owns a suitable damper, which offers a theoretical guidance for the design and application of a novel HSLDS isolator.
Fully Integrated Bidirectional CMOS-MEMS Flow Sensor With Low Power Pulse Operation
Leveraging More-than-Moore technology, we demonstrate an integrated CMOS MEMS flow sensor via a very compact system on chip (SoC) that can sense the bidirectional N2 gas flow. Our SoC features a very low-noise instrumentation amplifier that is implemented on a CMOS wafer and serves as a readout integrated circuit for a thermoresistive micro-calorimetric flow sensor which is fabricated on a MEMS wafer. A compact heterogeneous integration is achieved by combining the two wafers via the proprietary InvenSense AlN process. The measured sensitivity of our CMOS MEMS flow sensor is 98 mV/sccm which is three times better than the state-of-the-art counterpart. The flow range measured by our SoC is from −26 to 26 m/s (from −50 to 50 sccm). Moreover, the pulsed heater operation makes this proposed SoC flow sensor a very low power (<9 mW) and, thus, a promising candidate for the Internet-of-Things applications in smart home/green buildings.