Experimental study of the boron redistribution in bilayer films silicon-based by SIMS technique
The present work focuses on the study two sets of films bilayers obtained by Low Pressure Chemical Vapor Deposition (LPCVD), for use as material to MOS gate structures (transistors, chemical sensor ISFET, etc.). The first series of films are composed by two layers, silicon amorphous un-doped layer (poly1) and polysilicon boron doped in situ (poly2). The second series are constituted by boron doped polysilicon (polySi) and nitrogen doped polysilicon (NIDOS). These films (poly1/poly2 and polySi/NIDOS) are annealed in tem the same conditions of deposit and annealing. The boron concentration is monitored by secondary ion mass spectrometry (SIMS). The superposition between the SIMS profiles of poly1/poly2 and polySi/NIDOS films have shown that low thermal annealing budget at 600°C/2h, ensures long boron redistribution to the interface poly2/SiO2. At the contrary, a high thermal budget the second layer (poly2) was recristallyzed and reached to the doped oxide. For polySi/NIDOS films, SIMS profiles confirmed the presence of low nitrogen (X = 1%) which can effectively suppress the boron penetration at the interface NIDOS/SiO2.
Reduction of boron penetration through thin silicon oxide with a nitrogen doped silicon layer
Abstract This paper deals with the development of the disilane Si 2 H 6 gaseous source for gate technology and more precisely, reports on the use of nitrogen doped silicon (NIDOS) deposited from disilane and ammonia for the realisation of polycrystalline gate. Boron diffusivity into the NIDOS films is studied thanks to SIMS experiments, and results are extended to the fabrication of P + -poly-Si/NIDOS/SiO 2 /Si capacitive structures. Electrical characterisations evidenced finally the influence of boron and nitrogen atoms on the electrical properties of PMOS devices.
Submicron polymer structures with X-ray lithography and hot embossing
This article describes the process chain for replication of submicron structures with varying aspect ratios (AR) up to 6 in polymethylmethacrylate (PMMA) by hot embossing to show the capability of the entire LIGA process to fabricate structures with these dimensions. Therefore a 4.7 μm thick layer of MicroChem 950k PMMA A11 resist was spin-coated on a 2.3 μm Ti/TiOx membrane. It was patterned with X-ray lithography at the electron storage ring ANKA (2.5 GeV and λc ≈ 0.4 nm) at a dose of 4 kJ/cm3 using a Si3N4 membrane mask with 2 μm thick gold-absorbers. The samples were developed in GG/BDG and resulted in AR of 6–14. Subsequent nickel plating at 52°C resulted in a 200 μm thick nickel tool of 100 mm diameter, which was used to replicate slit-nozzles and columns in PMMA. Closely packed submicron cavities with AR 6 in the nickel shim were filled to 60% during hot embossing.