Novel Program Method of String Select Transistors for Layer Selection in Channel-Stacked NAND Flash Memory
In this paper, we propose new string select transistors (SSTs)/dummy SSTs (DSSTs) threshold voltage (Vth) setting methods in simplified channel-stacked array with layer selection by multilevel operation (SLSM). In these methods, SSTs/DSSTs on each layer are set to their targeted Vth values by incremental step pulse program/one erase with various erase voltages, respectively. In the fabricated pseudo-SLSM, the validity of the new methods is verified. As a result, it is confirmed that the Vth values of SSTs/DSSTs are set to the targeted Vth values by the new methods and SSTs with extremely narrow Vth distribution can be obtained in the consequence. Moreover, memory operations such as erase, program, and read are performed in the fabricated structure after setting the Vth values of all the SSTs/DSSTs by the new methods. Despite unique LSM operations, stable memory operations are obtained successfully without the interference between stacked layers.
Comprehensive analysis of retention characteristics in 3-D NAND flash memory cells with tube-type poly-Si channel structure
Retention characteristics of a 3-D NAND flash cell with tube-type poly-Si body are investigated at a high temperature (T) depending on program (P), neutral (N), and erase (E) states of adjacent cells. The trap density (N<sub>t</sub>) in the nitride storage layer of the cell is extracted by utilizing retention model and deriving related equations in cylindrical coordinate. By programming or erasing adjacent cells, we can separate laterally distributed charge component from the retention characteristics. The adjacent cells which are programmed suppress significantly the lateral diffusion at a high T so that we can extract accurate N<sub>t</sub> profile. Extracted peak of N<sub>t</sub> at P-P-P mode is ~1.2×10<sup>19</sup> cm<sup>-3</sup>eV<sup>-1</sup> at an E<sub>C</sub>-E<sub>T</sub> of 1.0 eV. Retention characteristics with effective gate length and word-line biasing are also investigated.
Antitumor activities of (2"R)-4'-O-tetrahydropyranyl-adriamycin (THP) and its combination with other antitumor agents on murine tumors.
(2''R)-4'-O-Tetrahydropyranyladriamycin (THP) is a new derivative of doxorubicin (adriamycin, ADM). The concentrations of THP and ADM required to inhibit by 50% the growth of a cultured L1210 cells was 0.003 microgram/ml and 0.016 microgram/ml, respectively. Various therapeutic designs of combinations of THP with other antitumor agents were investigated in vivo using the L1210 murine leukemia. The combination of THP with cytosine arabinoside (Ara-C), cyclocytidine hydrochloride (Cyclo-C), 6-mercaptopurine (6-MP) and cyclophosphamide (EX) showed a great effectiveness following daily intraperitoneal treatment from days 1 to 10. High therapeutic effects were also obtained with the combinations of THP with Ara-C, Cyclo-C, vincristine (VCR) and EX following intravenous combination therapy one day following implantation of L1210 leukemia. Schedule dependency and its therapeutic efficacy of THP were examined. THP showed almost the same antitumor activity on the solid-type sarcoma-180 or solid-type Ehrlich carcinoma as ADM by intraperitoneal or intravenous treatment. THP showed some superior activity to ADM in the advanced stage of L1210 leukemia. High antitumor activity of THP on murine leukemia L1210 has been reported by Tsuruo et al. (Cancer Res. 42: 1462-1467, 1982) and was also confirmed. THP gave many mice cures, especially in the intravenous treatment.