Growth study of chemical beam epitaxy of GaNxP1−x using NH3 and tertiarybutylphosphine
Abstract A study in the growth of GaN x P 1 − x epilayers by chemical beam epitaxy using tertiarybutylphosphine (TBP), ammonia (NH 3 ), and elemental Ga or triethylgallium is reported. Monitoring reflection high-energy electron diffraction (RHEED) intensity oscillations, we observe that both group-III- and group-V-induced incorporation rates are increased when NH 3 is introduced into a single cracker with TBP. From the difference in the periods of group-V-induced RHEED intensity oscillations, a 16% N incorporation is expected, but X-ray rocking curve measurement shows only 0.08% N. Using separate TBP and NH 3 crackers results in no enhancement in incorporation rates. We conclude that the cracking efficiency of TBP is increased with NH 3 co-injection.
Congratulations John Grant!
With this special issue, we are celebrating the outstanding career of John Grant, who is retiring from both his roles as SIA North‐American Editor and his affiliation with the University of Dayton Research Institute and the Air Force Materials Lab.
Industrial inorganic pigments
General Chemical and Physical Properties Behavior of Pigments in Binders White Pigments Titanium Dioxide Zinc Sulfide Colored Pigments Oxides and Hydroxides Cadmium Pigments Bismuth Pigments Ultramarine Pigments Iron Blue Pigments Carbon Black Properties Production Processes Specialty Pigments Magnetic Pigments Anticorrosive Pigments Luster Pigments Transparent Pigments.