Spatial-frequency response of holographic gratings photodeposited from inorganic colloids.
Surface photodeposition is a photon-assisted process by which thin films are formed on substrates immersed in colloid solutions. We experimentally evaluate the resolution capabilities of the photodeposition process with amorphous selenium colloids by recording holographic gratings at different spatial frequencies, up to 2200 lines/mm. The experimental diffraction efficiencies are analyzed in terms of a theoretical model, which relates the spatial-frequency response to optical recording parameters and colloid particle sizes. The maximal experimental diffraction efficiency reaches 13% with a spatial frequency of f = 1100 lines/mm. The diffraction efficiencies decrease monotonically with spatial frequency, and drop to half of the maximal diffraction efficiency at f ≈ 1500 lines/mm. These resolution capabilities are achieved with colloid particle sizes extending up to 80 nm. The theoretical derivation indicates that to obtain spatial frequencies above 3000 lines/mm, one should restrict the colloid particle size to a(max) ≤ 30 nm.
Liquid Phase Photodeposition Processes From Colloid Solutions
This chapter describes one method used in Liquid Phase Photo-Deposition (LPPD), namely Photodeposition from Colloid Solutions (PDCS). In the introduction, the basic photodeposition processes and their current technological trends are described. In section (2) the PDCS basics are given and in section (3) the photoreactor system and its experimental characteristics are described. In section (4) the significant controlling PDCS parameters are discussed and related to the experimental kinetic investigations. Section (5) describes the currently suggested theories of PDCS processes and section (6) brings typical applications. In section (7) the advantages and weaknesses of PDCS are compared with Gas Phase Photo-Deposition processes and in section (8) conclusions are drawn.
Photoreflectance characterization of vanadium-doped GaAs layers grown by metalorganic vapor phase epitaxy
Abstract We characterized the vanadium-doped (GaAs:V) layers grown on GaAs substrate by metalorganic vapor phase epitaxy. The conductivity of the samples is checked by the Hall effect measurements, and it is n type with electrons concentration ranging from 2×10 13 to 2×10 17  cm −3 . We used the photoreflectance technique (PR) to study the effect of vanadium doping on the optical properties of GaAs. Our experimental results show that the built-in electric field F and the broadening parameter Γ 0 increase with V-doping concentration. Furthermore, the temperature dependence of the built-in electric field and the broadening parameter of GaAs:V samples have been investigated by PR. It has been observed that these parameters increase with increasing temperature. The decrease of the built-in electric field with decreasing temperature is due to the photovoltage effect.We characterized the vanadium-doped GaAs (GaAs:V) layers grown on GaAs substrate by metalorganic vapor phase epitaxy.