Scalable, sub 2μm pitch, Cu/SiCN to Cu/SiCN hybrid wafer-to-wafer bonding technology
This paper presents a novel approach to face-to-face wafer-to-wafer (W2W) bonding using SiCN-to-SiCN dielectric bonding, in combination with direct Cu-Cu bonding using Cu pads of unequal size and surface topography for the top and bottom wafers. The use of SiCN dielectrics allows to obtain a high W2W bonding energy (> 2 J/m2) at low annealing temperature (250 °C). Excellent Cu-Cu bonding is obtained after annealing at 350 °C. A novel CMP process, resulting in a slightly protruding Cu top pad and a slightly recessed Cu bottom pad, is introduced. The difference in pad sizes, allows for the necessary W2W overlay bonding tolerances. Excellent resistivity and yield results are obtained across bonded 300 mm Si wafers for scaled 360 nm top pads bonded to 720 nm bottom pads at 1.44 μm pitch (25% bottom Cu density). Feasibility of smaller pitches has been demonstrated by successfully bonding 180 nm top pads to 540 nm bottom pads at 0.72 μm pitch.
Plasma Treatment Mechanism in Si–SiO2 Direct Wafer Bonding
We investigated the mechanism of plasma treatment in enhancing Si–SiO2 bonding strengths. In particular, two of the most dominant arguments, hydrophilicity and water diffusivity, were experimentally examined. Although Si–SiO2 bonding is often described
 as hydrophilic due to its fundamental mechanism, the results here show that changes in hydrophilicity do not have a linear relation with bonding strength. Instead, plasma treatment on SiO2 surfaces shows a greater effect on the bonding strengths than that on Si surfaces, indicating
 that water diffusivity plays a crucial role in wafer bonding. In certain circumstances, Si surface treatment in fact deteriorates the bonding strength, which is attributed to the removal of native oxide from the Si wafer.
Ceramic microwave antennas for mobile applications
Due to their medium to high permittivity values, ceramic microwave materials are attractive as building blocks for miniaturised antenna solutions. Further advantages are low dielectric losses and an excellent temperature stability of standard ceramic materials. Yet, the permittivity of the ceramic material also has a strong influence on the radiation efficiency and bandwidth of the antenna. This implies that in the design process a suitable compromise has to be found between the degree of miniaturisation on the one hand and the antenna efficiency and bandwidth on the other. We describe two approaches towards efficient miniaturised ceramic microwave antennas: the dielectric resonator antenna (DRA) with partial metallisation and the shorting post patch antenna. We focus on design steps taken to ensure both a high degree of miniaturisation and high values of the radiation efficiency, the choice of the ceramic material and the experimental performance of the antennas.