Simulation and experimental study on temperature field of fluid jet-dispenser
Fluid jet-dispensing technology has been widely used in micro-electronic encapsulation industry. The fluid viscosity varies as temperature changes, while it affects the process remarkably. Besides basic method on temperature field solution, some thermal behaviors, including heat conduction and heat exchange, boundary conditions and some physical parameters are overall analyzed in this paper. Based on the simulation software platform ANSYS, a two-dimensional transient temperature field model of jet-dispenser was built, and simulation programs on temperature field for two sorts of fluid with obviously different thermal conductivity were performed. Then heating experiments were finished to validate the feasibility of FEA, and results show that temperature distribution is homogeneous along fluid area and it meets the conditions of jetting.
The influence discipline of temperature of high viscosity fluid jetting
Viscosity which varies with the temperature remarkably was one of an important factor for fluid jetting. In this paper finite element models of fluid jet-dispenser for thermal analysis and fluid-structure interaction analysis were built through ANSYS. The decided heat flux was loaded to the finite element model for thermal analysis to obtain the temperature field of the fluid field. So the average viscosity of the heated fluid can be worked out. And then the accumulative volume, average velocity and equivalent velocity of two different kinds of fluid between in heating and room temperature condition in fluid-structure interface analysis were compared. The results indicted that the heated fluid was apt to spout. And the losing heat was also worked out in jetting stage which was a reference to next work and designing the heater.
Anomalous Annealing Behavior of Arsenic Implanted Silicon as a Function of Dose and Energy
Anomalous annealing behavior of damage in As implanted Si has been investigated by channeling effect measurements. Room temperature As implants with doses from 1014 to 2 × 1016cm-2 at energies ranging from 50 to 250 keV into Si were annealed over the range of 600°C to 1100°C. Anneal temperatures ≥ 950°C reduce the disorder for ion doses of 0.5 to 1 × 1016 cm-2 at energies between 50 and 250 keV. Anomalously high residual disorder was found for the intermediate doses of 2 × 1014 to 2 × 10/cm2 implanted above 100 keV. For this intermediate dose, annealing of implants performed at liquid nitrogen temperatures did not show significant reduction in this damage. However implants at 200° to 300°C indicate a lower amount of damage compared to the room temperature implants.