Transferring porous layer from InP wafer based on the disturbance
We present a new method to transfer the three dimensional (3D) porous layer from InP wafer based on the disturbance, during electrochemical etching of n-InP (100) with chronopotentiometry with current ramp in 3 mol-L−1 NaCl solution. The potential bursting phenomenon was observed due to the disturbing instantaneously. In addition, the correlation between the amplitude of the potential and the porous layers separated from the InP wafer was discussed.
Voltage oscillations – an emergent property at high density pore growth
The paper addresses macroscopic voltage oscillations observed during anodic etching of pores in n-InP [1] and GaP [2]. These oscillations always occur concurrently with the modulation of pore diameters which are synchronized on large areas of the samples. The observed macroscopic voltage oscillations represent a kind of pattern formation of the system at high pore density which does not occur when the pore density is low and no interaction between pores is present. The voltage oscillations obtained at different temperatures and current densities are analyzed in time and space, including Wavelet transformations. A model of these macroscopic voltage oscillations will be presented, which is based on the basic principles of the current burst model [3] developed for Si and which can be successfully applied to III-V compounds, too.
Numerical Simulation of Thermal Sensitivity for Explosives
In order to compare the thermal sensitivity of several typical explosives, this article solved numerically one-dimensional transient heat conduction equation including thermal decomposition for explosives with finite difference method. The explicit difference equations under different boundary conditions were established, and the corresponding stability criterion was derived. The ignition times for typical explosives were calculated, which was used to evaluate thermal sensitivity of explosives.