Electrodeposited CuInSe2 Thin Film Junctions
We have investigated thin films and junctions based on copper indium diselenide (CIS) which have been grown by electrochemical deposition. CIS is a leading candidate for use in polycrystalline thin film photovoltaic solar cells. Electrodeposition is a cost-effective method for producing thin-film CIS. We have produced both p and n type CIS thin films from the same aqueous solution by simply varying the deposition potential. A CIS pn junction was deposited using a step-function potential. Stoichiometry of the single layer films was determined by energy dispersive spectroscopy. Carrier densities of these films increased with deviation from stoichiometry, as determined by the capacitance versus voltage dependence of Schottky contacts. Optical bandgaps for the single layer films as determined by transmission spectroscopy were also found to increase with deviation from stoichiometry. Rectifying current versus voltage characteristics were demonstrated for the Schottky barriers and for the pn junction.
Copper indium diselenide for photovoltaic applications
Solar cells utilizing CuInSe/sub 2/ as an absorber are amongst only four thin-film device techniques which have demonstrated conversion efficiencies greater than 10%. However, it can be argued that less is known at a fundamental level about CuInSe/sub 2/ than about the other thin-film absorbers which have exceeded this milestone. This lack of basic information has proved to be problematic and may be the major cause limiting cell improvement. This book comprises a collection of papers devoted to CuInSe/sub 2/, grouped in four sections on: single crystals, think polycrystalline films, characterization, and devices.
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