‘Iron Fists in Iron Gloves’: The Political Economy of US Terrorocracy Promotion in Colombia 1
Most analysts of US post-cold war policy in Colombia argue that the US has switched from targeting Communist guerrillas to a war on drugs and a new war on terror. Contrary to these claims this article shows that the US continues to back Colombian counter-insurgency efforts which essentially amount to a strategy of state terrorism under a democratic façade (terrorocracy). Moreover, this policy continues to be pursued because the US has long employed counter-insurgency warfare to stabilise social formations conducive to US political and economic interests. In short, counter-insurgency warfare is the military strategy par excellence for the policing and reproduction of global capitalism via localised proxy forces throughout the third world. In Colombia this strategy continues to have profound consequences for human rights, social justice and democracy.
The United States and Latin America: Shaping an elusive future
This article presents a regional overview of US‐Latin American security relations, focusing on those countries where US national security interests are most likely to be endangered over the next two decades. The author examines the current US strategy of ‘shaping’ the Latin security environment, with a view to assessing the strength and weaknesses of this approach. The article presents some policy recommendations, including the recommendation that the US do more to redress the historical imbalance in Latin American civil‐military relations by strengthening civilian institutions. It also argues that at the regional level a major effort be made to recapture momentum toward the creation of a Free Trade Association of the Americas.
Photoreflectance characterization of vanadium-doped GaAs layers grown by metalorganic vapor phase epitaxy
Abstract We characterized the vanadium-doped (GaAs:V) layers grown on GaAs substrate by metalorganic vapor phase epitaxy. The conductivity of the samples is checked by the Hall effect measurements, and it is n type with electrons concentration ranging from 2×10 13 to 2×10 17  cm −3 . We used the photoreflectance technique (PR) to study the effect of vanadium doping on the optical properties of GaAs. Our experimental results show that the built-in electric field F and the broadening parameter Γ 0 increase with V-doping concentration. Furthermore, the temperature dependence of the built-in electric field and the broadening parameter of GaAs:V samples have been investigated by PR. It has been observed that these parameters increase with increasing temperature. The decrease of the built-in electric field with decreasing temperature is due to the photovoltage effect.We characterized the vanadium-doped GaAs (GaAs:V) layers grown on GaAs substrate by metalorganic vapor phase epitaxy.