Capping of InAs/GaAs Quantum Dots for GaAs Based Lasers
Nowadays, self-assembled InAs quantum dots grown on GaAs substrates are intensively studied due to their potential applications: quantum dot ensembles are employed in laser active regions and mid-infrared detectors, single quantum dots have a potential for application in memories, two-level information processing or single photon sources (Henini& Bugajski, 2005; Mowbray& Skolnick, 2005; Battacharya, 2007).
Effect of the lower and upper interfaces on the quality of InAs/GaAs quantum dots
Abstract The aim of this work is to influence quantum dot (QD) formation by improving the lower and upper InAs/GaAs QD interface quality. QD properties were studied by reflectance anisotropy spectroscopy, atomic force microscopy and high resolution transmission electron microscopy. All structures were prepared by low pressure metal organic vapor phase epitaxy. Concerning the lower interface, a good epitaxial surface planarity is required for QD formation with high QD density and narrow size distribution. Therefore the growth conditions of the QD buffer layer are very important. We demonstrate the improvement of the QD size distribution and homogeneity, when the growth rate of the buffer layer was decreased. The upper QD interface is formed during the covering process. InAs quantum dots were capped by GaAs or by GaAsSb. The presence of Sb atoms in covering layer strongly influences the interface abruptness. In the case of GaAs covering layer, an InGaAs layer with gradual decrease of In concentration is unintentionally formed at the interface between InAs and GaAs. The presence of Sb in GaAsSb covering layer helps to form abrupt interface between InAs and covering layer. However, enhanced surfacting of In atoms was observed for GaAsSb SRL. An optimal GaAsSb composition profile is suggested to prevent dissolution of QDs during the covering process and to minimize the amount of surfacting In atoms.
Third order nonlinear distortion of SAW duplexers in UMTS system
Nonlinearity distortion characterization and accurate modeling techniques for leaky surface acoustic wave (LSAW) devices have been desired in the recently years due to the applications of the Radio Frequency (RF) SAW duplexers in the third-generation (3G) telecommunication system, such as Universal Mobile Telecommunications System (UMTS). In the work, we first discuss the approaches to measure and characterize the 3rd order harmonic generation of the resonators on lithium tantalate YXl42° wafer and YXl48° wafer, with resonance frequency of 800MHz to 900 MHz; Second, we present an effective nonlinear Butterworth-van-Dyke (BVD) model to simulate the multi-tone 3rd order intermodulation effects of a band 5 duplexer; simulation result vs. measurement of 3rd order harmonic generation, 3rd order intermodulation (IMD3) and triple beat are presented.