Enhanced Dark Current Suppression of Amorphous Selenium Detector With Use of IGZO Hole Blocking Layer
We examined the potential application of indium gallium zinc oxide (IGZO) as a hole-blocking layer for an amorphous selenium (a-Se)-based detector to reduce the dark current and improve the sensitivity of the detector. By employing a thin layer of IGZO (375 nm), the dark current of an a-Se detector remains below 1 pA/mm2 up to electric fields as high as 60 V/μm. The measured dark current at different electric fields is comparable to the thermal generation currents in a-Se, thus demonstrating the good hole-blocking properties of IGZO. The detector's photo response was characterized using a blue light-emitting diode at different electric fields. A factor of three improvement in external quantum efficiency was observed by increasing the electric field of the detector from 10 to 50 V/μm.
Evaporation time effects on structural, optical and X-ray photoresponse properties of thermal evaporated a-Se thin films at low vacuum degree
In this work, we prepared the thermal evaporated amorphous selenium (a-Se) thin films with different evaporation time at low vacuum degree 10-2 Pa. The results showed a-Se thin films were easier to be crystallized with prolonging evaporation time. Also, the transmittance absorption edges of a-Se thin films showed a blue shift with the enhanced optical energy gap from 2.08 eV to 2.15 eV. Further, the dark current was found to depend on energy gap, and became lower as extending evaporation time. Moreover, a-Se thin films showed the improved X-ray photocurrent gain, with a rapid photoresponse and a small applied voltage requirement. Overall, this work revealed that the increase of evaporation time led to better deposition quality of thin films, enhancing energy gap and X-ray photoresponse, but thin films were not able to resist to higher temperature anymore.
A solid-state amorphous selenium avalanche technology for low photon flux imaging applications.
PURPOSE
The feasibility of a practical solid-state technology for low photon flux imaging applications was investigated. The technology is based on an amorphous selenium photoreceptor with a voltage-controlled avalanche multiplication gain. If this photoreceptor can provide sufficient internal gain, it will be useful for an extensive range of diagnostic imaging systems.


METHODS
The avalanche photoreceptor under investigation is referred to as HARP-DRL. This is a novel concept in which a high-gain avalanche rushing photoconductor (HARP) is integrated with a distributed resistance layer (DRL) and sandwiched between two electrodes. The avalanche gain and leakage current characteristics of this photoreceptor were measured.


RESULTS
HARP-DRL has been found to sustain very high electric field strengths without electrical breakdown. It has shown avalanche multiplication gains as high as 10(4) and a very low leakage current (< or = 20 pA/mm2).


CONCLUSIONS
This is the first experimental demonstration of a solid-state amorphous photoreceptor which provides sufficient internal avalanche gain for photon counting and photon starved imaging applications.