New photoluminescence lines in Vanadium doped GaAs grown by MOVPE
We examined the electrical and optical properties of vanadium-doped GaAs grown by metalorganic vapour phase epitaxy using vanadium tetrachloride (VCl4) as a novel dopant source. Samples with various vanadium incorporations were investigated. All samples were n type. The electron concentration dependence on the VCl4 flow rate was established. At 15 K, by comparison with undoped layers grown in the same conditions, photoluminescence spectra of V-doped exhibited three new emission bands: at 1.41, 1 and 0.72 eV. The 1 and 0.72 eV band emissions were attributed to V 2þ and V 3þ intracenter emission, while the 1.41 eV band was suggested to be a donor-bound transition. The identity of the donor is tentatively attributed to a donor complex that associates vanadium to an arsenic vacancy. From Hall effect as function of temperature, the donor ionisation energy was estimated to be about 102 ^ 5 meV. q 2003 Elsevier Science Ltd. All rights reserved.
Growth of vanadium-doped semi-insulating GaAs by MOCVD
Semi-insulating GaAs layers have been grown by MOCVD by vanadium (V) doping with triethoxylvanadyl: VO(OC2H5)3. The resulting resistivity was 108 Ω cm or more at room temperature. The maximum deep level concentration found was more than 1018 cm-3 without surface roughening. Semi-insulating layers were obtained over a wide range of growth conditions and were obtained over a wide range of growth conditions and were relatively stable to high temperature treatment. Furthermore, this dopant did not show a memory effect.
Phase formation during mechanical alloying in the Ti–Si system
Abstract Mechanical alloying of Ti–Si powder mixture or TiH 1.924 –Si powder mixture was performed by high-energy ball milling, in which the Ti to Si mole ratio was 1:2. The phase formations in both mixtures during milling were investigated by X-ray diffraction. Mechanical alloying a mixture of elemental powders led to the formation of TiSi 2 equilibrium compound, while when starting from Si + TiH 1.924 , a metastable phase was formed. The metastable phase completely transforms to TiSi 2 when the mechanically alloyed powder is annealed at temperatures above 800 °C. Two different pathways of phase transitions during mechanical alloying are attributed to the existence of hydrogen atoms, i.e., when starting from Si + TiH 1.924 compared to Si + Ti, the kinetics for the formation of the TiSi 2 intermetallic compound slows down. The kinetics related to the different phase transitions depending on the starting powder mixture are discussed.