Irradiated cubic single crystal SiC as a high temperature sensor
Radiation is known to cause point defects formation in different materials. In the case of cubic SiC single crystal radiation flux on the order of 2⋅10 20 neutrons/cm 2 at 0.18 MeV causes over 3% volume lattice expansion. Radiation-induced strain (measurable by X-Ray diffraction) can be relieved when the annealing temperature exceeds the temperature of irradiation. Based on this effect the original technology of maximum temperature measurement was developed a while ago. Single crystal SiC sensor small size (200-500 microns), wide temperature range (150-1450 °C), “no-lead” installation, and exceptional accuracy make it very attractive for use in small, rotating and “hard-to-access” parts, including, but not limited to gas turbine blades, space shuttle ceramic tiles, automobile engines, etc. With the advances in X-Ray diffraction measurements, crystal and thin film growth techniques, it is the time to revise and update this technology. Modeling radiation damage, as well as annealing effects are also beneficial.
A swelling model for stoichiometric SiC at temperatures below 1000°C under neutron irradiation
Abstract A simple phenomenological model for the saturation swelling below 1000°C of neutron-irradiated silicon carbide (SiC) is presented in this paper. Under fast neutron irradiation, SiC is known to undergo volumetric expansion (swelling) which quickly saturates at a fast fluence of approximately 1025 n/m2 for irradiation temperatures below 1000°C. A previous model due to Balarin attributes swelling to lattice dilation as a result of single point defects. We show in this paper that the experimentally observed linear temperature dependence of saturation swelling can be explained in terms of the formation and growth of small interstitial clusters, resulting directly from collision cascades initiated by energetic neutrons. These loops grow by absorption of mobile carbon interstitials and their composition is subject to stoichiometry constraints, requiring absorption of slower silicon interstitials. Because of cascade re-solution events, the density of loops decreases sharply with temperature as a result of overlap of cascades with larger size loops at higher temperatures. The average radius of these loops increases with temperature. Volumetric swelling is shown to obey a linear temperature dependence as a consequence of the strong decrease in density and the simultaneous increase in average radius, and to saturate with fluence. The model is shown to be consistent with experimental observations. In the temperature range below 500–600°C, swelling seems to be dominated by single point defects, or defect clusters containing only a few atoms, in accordance with the explanation offered by Balarin.
Silica films on silicon carbide: a review of electrical properties and device applications
This paper reviews the present knowledge on silica films (SiO2) on silicon carbide (SiC). First, kinetic of thermal oxidation of SiC is described, and the effects of a great number of parameters (various SiC polytypes, substrate type, substrate orientation...) are discussed. Mainly, thermal oxides grown on SiC are close to stoichiometric silica and the oxidation rate depends on the terminal face of the SiC monocrystal. The next four sections discuss the electrical properties of the oxide, and of the oxide/SiC interface, and especially the effects of materials and technological process on the interface state density and the effective oxide charge (Section 5), and the origin of the interface states are discussed in detail (Section 6). Oxides grown on n-type SiC have electrical properties (in terms of dielectric strength, leakage currents, interface trap, and oxide charges) measured by means of metal-oxide-semiconductor (MOS) structures, similar to oxides grown on silicon. Until recently, p-type SiC MOS structures have had a large equivalent oxide charge and larger interface state densities in spite of many efforts, compared to silicon MOS structures. It seems nevertheless that recent studies have improved the SiO2/SiC interfacial quality. Aluminum, carbon and alkali species are ihs main suspected contaminants. Finally, Section 7 presents the applications of oxide films in SE-based devices: MOS capacitors and MOS field effect transistors (MOSFETs) for microelectronics, MOSFETs for power electronics, and some applications using silica layers as a passivation layer. In spite of a smaller than required carrier mobility in the inversion layer, MOS field effect transistors (MOSFETs) have been demonstrated to operate up to 650 degreesC and integrated circuits based on NMOS and PMOS technologies have been successfully operated up to 300 degreesC. Vertical power MOSFETs are also of importance but their performances are still limited by a specific on-resistance larger than device requirements. The effect of charges present in the oxide on the electrical properties of high voltage diodes is also briefly discussed.