Preparation of Wide Bandgap Cu(InGa)(SeS)2 Solar Cells with Improved Fill Factor
Cu(InGa)(SeS)2 absorber films with a band gap Eg  ges 1.5 eV have been prepared using thermal co-evaporation with different sequences of Cu rich and Cu poor deposition. The composition through the film is, in some cases, non-uniform due to changes in relative S and Se incorporation. The compositional depth profile was characterized by grazing incidence X-ray diffraction and Auger electron spectroscopy with Ar sputtering. The composition ratio [S]/[S+Se] in the films depends on the process and the composition ratio [Cu]/[In+Ga] during deposition. Solar cells with a soda-lime glass/Mo/CIGSS/CdS/ZnO/ITO/(Ni-Al grid) structure were fabricated and a higher FF > 77 % than previous wide bandgap Cu(InGa)(SeS)2 devices has been demonstrated with these processes. The best Cu(InGa)(SeS)2 cell with Eg=1.5 eV is prepared by the two-layer process, and shows an efficiency of 11.2 %, with Voc =0.760 V, Jsc=19.2 mA/cm2, and FF=77.3 %. Quantum efficiency of the CIGSS cells shows relatively poor response for wavelength > 600 nm compared to that with CuInS2
HIGH-EFFICIENCY CUINXGA1-XSE2 SOLAR CELLS MADE FROM (INX,GA1-X)2SE3 PRECURSOR FILMS
In, Ga, and Se were coevaporated to form precursor films of (Inx,Ga1−x)2Se3. The precursors were then converted to CuInxGa1−xSe2 by exposure to a flux of Cu and Se. The final films were smooth, with tightly packed grains, and had a graded Ga content as a function of film depth. Photovoltaic devices made from these films showed good tolerance in device efficiency to variations in film composition. A device made from these films resulted in the highest total‐area efficiency measured for any non‐single‐crystal, thin‐film solar cell, at 15.9%.
Vapour pressure measurements in the copper-selenium system
Abstract Se2 dissociation pressures in the CuSe system were measured by different methods. The results agree with the phase diagram published by Heyding (1). Some thermodynamic data for the phases in equilibrium were calculated.