Physical study of the dissipated power area in high electron mobility transistors for thermal modelling
The hot area in power transistors due to the power dissipation is determined from a 2D-hydrodynamic model. The power is calculated everywhere in the device from the knowledge of the physical quantities (current density, electric field). The hot area is determined accurately to be coupled to a thermal modelling giving the temperature everywhere in the device [J. Park, M.-W Shin, C.-C. Lee, Thermal modeling and measurement of GaN-based HFET devices, IEEE Electron Device Lett. 24(7) (2003) 424-426 [1]; J.-C Jacquet, R. Aubry, H. Gerard, E. Delos, N. Rolland, Y. Cordier, A. Bussutil, M. Rousseau, S.L. Delage, Analytical transport model of AlGaN/GaN HEMT based on electrical and thermal measurement, 12th GAAS Symposium, Amsterdam, 2004, pp. 235-238 [2].]. The method is applied to HEMTs (high electron mobility transistors) based on GaAs or GaN. It is shown that the hot area depends on the bias conditions and on the transistor gate recess topology.
Thermionic emission in a hydrodynamic model for heterojunction structures
A hydrodynamic numerical model for compositionally graded heterojunction structures has been used to model the d-c properties of a triangular AlxGa1−xAs barrier diode. The boundary conditions for the current density and the energy flow density at the abrupt heterojunction interface are based on the combined thermionic emission/diffusion theory. While the electrical potential is continuous throughout the whole device, both the Fermi level and the electron temperature are allowed to be discontinuous at the abrupt heterojunction interface. The inclusion of a boundary condition for thermionic emission reduced the reverse current about ten times, while the forward current was almost unaffected. The extension of the drift-diffusion model to a hydrodynamic model, however, had very little effect on the reverse current, but resulted in a forward current about three times higher. Monte Carlo simulations were used to investigate the influence of the Al mole fraction on some physical quantities, such as the low-field mobility and the energy relaxation time.
Palaeocarpinus (Extinct Betulaceae) from Northwestern China: New Evidence for Paleocene Floristic Continuity between Asia, North America, and Europe
Spiny-bracted fruits of Palaeocarpinus Crane, a genus of Betulaceae previously known only from Europe and North America, have been discovered in the Paleocene of Altai, northwestern China. The fruits are found in association with abundant Corylus-like foliage and staminate catkins containing Corylus-like pollen. Because of problems distinguishing leaves of Corylus from those of extinct betulaceous genera, we place these leaves in the genus Corylites Gardner ex Seward & Holttum. The fruits, staminate catkins, pollen, and leaves from Altai were probably all produced by a single species. Palaeocarpinus orientalis is nearly identical in its morphology to Palaeocarpinus joffrensis from the Paleocene of North America except in the more rounded primary bracts of the associated staminate catkins. The species is less similar to Palaeocarpinus laciniata from the Paleocene of southern England.