Synthesis of a dielectric rod array for a multiple beam reflector antenna
At the Delft University of Technology a new transportable atmospheric radar (TARA), having a sophisticated antenna system, is under construction. The antenna of TARA has multiple beams pointing in different directions. The beams are switched electronically by means of a parabolic dish fed by a dielectric rod array located in the focal plane. Moumen and Ligthart (1999) showed that an array consisting of two dielectric rods separated by 0.77/spl lambda/, where /spl lambda/ stands for the wavelength, is needed in order to achieve a well focused beam at 15/spl deg/ with low side-lobes. However, due to this small separation distance, degradation of the radiation pattern and mismatches, due to mutual coupling, become a serious problem. This paper presents a method to synthesise the dielectric rod array (amplitude and phase distribution) that takes into account mutual coupling effects.
Effects of mutual coupling on interference mitigation with a focal plane array
A focal plane array feed of electrically small elements has been proposed as a means for achieving high sensitivity for radio astronomy applications in the presence of radio frequency interference (RFI). For a broadband system, mutual coupling effects become significant as the array element spacing becomes small relative to the electromagnetic wavelength. We present a theoretical framework for modeling the effects of mutual coupling and for determining the optimal multiport matching network between array elements and front-end transistor low-noise amplifiers for maximum signal-to-noise ratio (SNR). Numerical results are given for a model scenario including spillover and amplifier thermal noise and point signal and interference sources. A suboptimal self-impedance matching network yields performance close to that of a full network match.
Anomalous Annealing Behavior of Arsenic Implanted Silicon as a Function of Dose and Energy
Anomalous annealing behavior of damage in As implanted Si has been investigated by channeling effect measurements. Room temperature As implants with doses from 1014 to 2 × 1016cm-2 at energies ranging from 50 to 250 keV into Si were annealed over the range of 600°C to 1100°C. Anneal temperatures ≥ 950°C reduce the disorder for ion doses of 0.5 to 1 × 1016 cm-2 at energies between 50 and 250 keV. Anomalously high residual disorder was found for the intermediate doses of 2 × 1014 to 2 × 10/cm2 implanted above 100 keV. For this intermediate dose, annealing of implants performed at liquid nitrogen temperatures did not show significant reduction in this damage. However implants at 200° to 300°C indicate a lower amount of damage compared to the room temperature implants.