Data of PCL-b-P(MMA-DMAEMA)2 characterization and related assays
The data presented here are related to the research paper entitled “PCL-b-P(MMA-co-DMAEMA)2 new triblock copolymer for novel pH-sensitive nanocapsules intended for drug delivery to tumors” by Franco et al. [1]. Characterization data of PCL-diol, macroinitiator Br-PCL-Br, homopolymers (PMMA and PDMAEMA) and copolymers (batch 1 and batch 2) analyzed by FTIR, SEC and NMR, as well as, characterization of PCL-NS formulation by laser diffraction and DLS analysis, initial nanocapsule formulations and 1C-NC and 2C-NC formulations, including hydrodynamic diameter at different pH media, and DMSO cytotoxicity.
A novel method for DNA delivery into bacteria using cationic copolymers
Amphiphilic copolymers have a wide variety of medical and biotechnological applications, including DNA transfection in eukaryotic cells. Still, no polymer-primed transfection of prokaryotic cells has been described. The reversible addition-fragmentation chain transfer (RAFT) polymer synthesis technique and the reversible deactivation radical polymerization variants allow the design of polymers with well-controlled molar mass, morphology, and hydrophilicity/hydrophobicity ratios. RAFT was used to synthesize two amphiphilic copolymers containing different ratios of the amphiphilic poly[2-(dimethyl-amino) ethyl methacrylate] and the hydrophobic poly [methyl methacrylate]. These copolymers bound to pUC-19 DNA and successfully transfected non-competent Escherichia coli DH5α, with transformation efficiency in the range of 103 colony-forming units per µg of plasmid DNA. These results demonstrate prokaryote transformation using polymers with controlled amphiphilic/hydrophobic ratios.
Bevel RIE application to reduce defectivity in copper BEOL processing
Bevel etch used during wafer fabrication for semiconductor devices is discussed. In this case, the bevel etch process was utilized in middle of the line processing (MOL) to reduce back end of line (BEOL) defectivity. Tungsten and titanium nitride films, from the formation of contacts to the transistors, extend into the bevel region of the wafer and have been shown to initiate arcing. This can spread foreign material defects on the front side of the wafer in various BEOL post processing steps including subsequent reactive ion etching, SEM metrology and film depositions. The bevel etch tool confines a plasma etch to the outer edge of the front side of the wafer (which can be individually adjusted) and can remove dielectric, organic and Ti/TiN/W films using a fluorine based chemistry.