Fabrication and Characterization of Si Substrate-Free InGaN Light-Emitting Diodes and Their Application in Visible Light Communications
Visible light communications with InGaN-based light-emitting diodes (LEDs) grown on large-diameter (6-inch) and cost-effective Si (111) substrates are investigated experimentally. During epitaxial growth, the transition layers consisted of the step-graded AlGaN buffers incorporated with three low-temperature-grown (∼900 °C) AlN interlayers on AlN/Si substrates that are used to compensate for thermally induced tensile stress and to maintain a reasonable crystalline quality of GaN-on-Si LEDs. Strong light absorption from Si can be prevented by fabricating a Si substrate-free InGaN LED with a composite metal coating of Al/Ag/Al multilayer, providing improved adhesive strength and reflectivity comparable to the unitary Ag film. In comparison with GaN-on-Si LEDs, stripping Si substrates combined with the use of a highly reflective bottom mirror (Al/Ag/Al multilayer) reflected a more intense emission pattern corresponding to a 2.2 times (@ 190 mA) increase in light output power in thin-film LEDs. In addition, a 1.8 times (@ 160 mA) increase in optical channel bandwidth is achieved by using thin-film LEDs as optical transmitters. A direct line-of-sight optical link using the proposed thin-film LEDs achieved data transmission rates of up to 100 Mb/s over a distance of 100 cm, indicating that the proposed LEDs have potential for use as optical transmitters in indoor visible light communications.
Correlation of growth temperature with stress, defect states and electronic structure in an epitaxial GaN film grown on c-sapphire via plasma MBE.
The relationship of the growth temperature with stress, defect states, and electronic structure of molecular beam epitaxy grown GaN films on c-plane (0001) sapphire substrates is demonstrated. A minimum compressively stressed GaN film is grown by tuning the growth temperature. The correlation of dislocations/defects with the stress relaxation is scrutinized by high-resolution X-ray diffraction and photoluminescence measurements which show a high crystalline quality with significant reduction in the threading dislocation density and defect related bands. A substantial reduction in yellow band related defect states is correlated with the stress relaxation in the grown film. Temperature dependent Raman analysis shows the thermal stability of the stress relaxed GaN film which further reveals a downshift in the E2 (high) phonon frequency owing to the thermal expansion of the lattice at elevated temperatures. Electronic structure analysis reveals that the Fermi level of the films is pinned at the respective defect states; however, for the stress relaxed film it is located at the charge neutrality level possessing the lowest electron affinity. The analysis demonstrates that the generated stress not only affects the defect states, but also the crystal quality, surface morphology and electronic structure/properties.
Mechanical behaviour and durability of high volume fly ash cementitious composites
The purpose of this research is to separate different morphological particles of ASTM class F fly ash, and study their effect on mechanical behaviour and durability of high volume cementitious mixtures. In this research wet separation of raw fly ash is carried out, which resulted in three layers of different morphological particles. The first layer of particles float, comprise of about 1-5% of fly ash, is identified as cenospheres or hollow spheres. The second layer of particles is measured to be 55-60% of raw fly ash and consisting of porous spherical and rounded particles rich in Si and Al. The third layer particles is measured to be about 35-40% of raw fly ash. High volume fly ash cementitious composites containing second or third layer particles are tested under compression and bending, highlighting a higher strength and ductility in comparison to cementitious ones containing raw fly ash particles. KEYWORDS. Cementitious matrix; Raw fly ash; Second layer particles; Third layer particles.