To develop porous Si as substrate for better quality GaN layer
In this work, we prepare porous Si substrates via anodic etching process. The etching parameters such as time and current would be optimized for the best porous substrate, which is defined by having high porous density. The estimated average of porous density of the substrate is determined through the observation via scanning electron microscopy (SEM). After that, a thin GaN film is deposited onto the best porous Si substrate, using RF-sputtering machine. The grown layer is then will be characterized by photoluminescence (PL), X-ray diffraction (XRD) and Hall-effect measurements. As a comparison, we also grow and characterize a thin GaN on non-porous Si substrate, with the adoption of AlN buffer layer.
Growth of InGaN/GaN multiple-quantum-well blue light-emitting diodes on silicon by metalorganic vapor phase epitaxy
We report the growth of InGaN/GaN multiple-quantum-well blue light-emitting diode (LED) structures on Si(111) using metalorganic vapor phase epitaxy. By using growth conditions optimized for sapphire substrates, a full width at half maximum (FWHM) (102) x-ray rocking curve of less than 600 arcsec and a room-temperature photoluminescence peak at 465 nm with a FWHM of 35 nm was obtained. Simple LEDs emitting bright electroluminescence between 450 and 480 nm with turn-on voltages at 5 V were demonstrated.
Full-scale measurements of SO2 gas phase concentrations and slurry compositions in a wet flue gas desulphurisation spray absorber
Abstract Two measurement campaigns were carried out at ENERGI E2's Asnaes Power plant, unit 5. The unit has a capacity of 620 MW e and is equipped with a wet flue gas desulphurisation (FGD) plant employing a counter-current spray absorber with five spray levels. In the first campaign, the power plant was firing Orimulsion ® with 2.85 wt% S resulting in a flue gas concentration of SO 2 exceeding 2000 ppmv. In the second campaign, the fuel applied was a low-S blended coal and the SO 2 concentration in the raw gas was around 400 ppmv. A novel probe for in situ sampling of gas phase concentrations in wet FGD spray absorbers was developed and applied for measuring axial profiles of the SO 2 gas phase concentrations in the absorber. The expected decrease in SO 2 concentrations along the height of the absorber was found in the spray section (from height 26.5 to 36.2 m) whereas the SO 2 concentration above the holding tank and below the gas inlet was quite low probably due to long local residence times in the region. Horizontal variations, due to somewhat different flow conditions near the column wall were investigated and the SO 2 concentrations were found to be higher near the wall. Measurements at different gross loads showed that the SO 2 gas phase concentration at a given position inside the absorber was roughly linearly related to the L/G ratio in the measuring interval. Turning off one of the lower spray levels, while burning coal with low S content, did not lower the overall removal efficiency of the absorber. However, the SO 2 gas phase concentration inside the lower part of the absorber was increased by a factor of 2–3. Measurements of slurry pH at different positions showed a decrease of approximately 0.5 units from the upper to the lower part of the absorber. The full-scale measurements provide a detailed set of experimental data for validation of mathematical models of a wet FGD spray absorber.