350-nm band edge-emitting laser diodes enabled by low-dislocation-density AlGaN templates
Realization of efficient laser diodes with ultra-violet (UV) emission from ~260-360 nm would enable many applications including fluorescence-based biological agent detection, sterilization, and portable water purification. While InGaN-based laser diodes are well developed down to ~370 nm, achieving shorter UV wavelengths requires higher Al-content AlGaN alloys with increasing challenges in achieving p-type doping, strain-management, and low threading-dislocation-density (TDD) AlGaN templates. Given these challenges, few groups have reported AlGaN-based edge-emitting laser diodes (LDs) with emission <; 355 nm.[1, 2] Most recently, random lasing via Anderson localization in AlGaN nanowire structures has demonstrated a novel approach to realizing deep-UV laser diodes.[3].
Ultralow-threshold electrically injected AlGaN nanowire ultraviolet lasers on Si operating at low temperature.
Ultraviolet laser radiation has been adopted in a wide range of applications as diverse as water purification, flexible displays, data storage, sterilization, diagnosis and bioagent detection. Success in developing semiconductor-based, compact ultraviolet laser sources, however, has been extremely limited. Here, we report that defect-free disordered AlGaN core-shell nanowire arrays, formed directly on a Si substrate, can be used to achieve highly stable, electrically pumped lasers across the entire ultraviolet AII (UV-AII) band (∼320-340 nm) at low temperatures. The laser threshold is in the range of tens of amps per centimetre squared, which is nearly three orders of magnitude lower than those of previously reported quantum-well lasers. This work also reports the first demonstration of electrically injected AlGaN-based ultraviolet lasers monolithically grown on a Si substrate, and offers a new avenue for achieving semiconductor lasers in the ultraviolet B (UV-B) (280-320 nm) and ultraviolet C (UV-C) (<280 nm) bands.
Two distinct mechanisms for bilirubin glucuronide transport by rat bile canalicular membrane vesicles. Demonstration of defective ATP-dependent transport in rats (TR-) with inherited conjugated hyperbilirubinemia.
Bilirubin is conjugated with glucuronic acid in hepatocytes and subsequently secreted in bile. The major conjugate is bilirubin diglucuronide. Using sealed vesicles which are primarily derived from the canalicular (CMV) and sinusoidal (SMV) membrane vesicle domains of the plasma membrane of hepatocytes, we demonstrated that bilirubin glucuronides are transported by CMV by both ATP- and membrane potential-dependent transport systems. In CMV from normal rats, these processes are additive. In CMV from TR- rats, which have an autosomal recessively inherited defect in biliary secretion of nonbile acid organic anions, ATP-dependent transport of bilirubin diglucuronide was absent whereas the membrane potential driven system was retained. Other canalicular ATP-dependent transport systems, which were previously described for organic cations and bile acids, are functionally retained in TR- rats. Our study indicates that bilirubin glucuronides are primarily secreted into the bile canaliculus by an ATP-dependent mechanism which is defective in an animal model of the human Dubin-Johnson syndrome.