A New Isolation Process for VLSI Devices
In this paper we present a new zero-bird's beak process which, with an additional photolithographic step, substitutes the thermal fully-recessed field oxide for a CVD oxide. With this process we have fabricated devices which present a very small narrow channel effect. Moreover, the use of a reference mask increases the process reproductivity and reduces the probability of the double-threshold voltage effect. The cross-section and electrical results are presented.
A simplified box (buried-oxide) isolation technology for megabit dynamic memories
A simplified version of BOX isolation technology is described. The new process has been greatly simplified over the original BOX by introducing an additional non-critical masking step. The body effect observed in narrow channel devices is reduced in the new structure. The capacitance measurement on diffused junctions in BOX structure shows smaller contributions from diode perimeter as compared to LOCOS structure. Hot electron reliability of small geometry MOSFETs has been also studied and the results are presented and discussed.
PASSIVE AND LOW-ENERGY RESEARCH AND PRACTICES-DEHUMIDIFICATION
Methods of achieving acceptable indoor conditions in overheated, temperate, and underheated humid climates are discussed and compared. Desiccants and desiccant systems utilizing solid and liquid sorbents and various low-energy mechanical systems are described and evaluated.