In-situ, low dose rate, total ionising dose test of the cooling performance of a thermoelectric module
This work presents and discusses the design and fully automated total ionising dose test of a thermoelectric cooling module. The goal was to develop a reliable test method which can be used to measure potential total ionising dose induced degradation of the cooling performance and demonstrate this method in a long term, low dose rate experiment. Details of the tested hardware and fully automated test system are published in this work, including preliminary test results and lessons learned.
A novel temperature controller for in-situ measurement of radiation-induced changes in temperature effects on space electronics
Abstract The paper discusses a novel temperature controller and a related test method allowing in-situ measurement of total ionising dose-induced changes in the impact of temperature on electronic devices for space applications. Various results of pilot radiation experiments (testing commercial PMOS transistors, RADFETs, and voltage references) are also presented.
Induced lattice defects in InGaAsP laser diodes by high-temperature gamma ray irradiation
Abstract Results of a study are presented on the degradation of InGaAsP laser diodes by high-temperature γ-ray and electron irradiation. It is shown that the optical power decreases after irradiation. One hole trap is observed in the In0.76Ga0.24As0.55P0.45 multi-quantum well active region after room-temperature γ- or e−-irradiation. The deep levels are thought to be associated with the Ga-vacancy. The decrease of the optical power is ascribed to the carrier removal and to the mobility reduction by carrier scattering, through the induced lattice defects. The change of device performance and the introduction rate of lattice defects decrease with increasing irradiation temperature. The optical power after a 200°C irradiation is nearly identical as before, for the fluence range studied.