Millimeter-wave AlGaAs-GaAs HBT power operation
The AlGaAs-GaAs HBT has demonstrated good power performance up to 18 GHz. Although f/sub max/ is typically above 100 GHz, the power performance limitation and large signal operation at millimeter wave frequencies have not been studied. Power results from two HBT structures at 35 GHz are analyzed based on numerical simulation. The HBT demonstrated 8.5-dB linear power gain, 30% PAE with 7.8-dB gain and 7.5-V V/sub ce/ bias. The power density reaches 1.25 mW/ mu m/sup 2/. A shorter collector (0.4 mu m) is shown to be better suited for 35-GHz operation as a result of shorter collector transit time and smaller residual collector voltage. Improvement can be achieved by reducing the base and collector resistance, and the collector capacitance.<<ETX>>
HBT power devices and circuits
Abstract The status of the power HBT technology is reviewed. The advances made in the electrical and thermal design of unit-cells are examined to identify the present and near future applications in microwave power amplifications. The current status of the technology is such that AlGaAs/GaAs HBTs have become suitable for most microwave and especially for commercial L/S-band frequency applications. The performance is not yet adequate for mm-wave applications, which may require alternative material technologies.
Prediction of net pressure on pressure equalized cavities
Abstract A numerical model has been developed for prediction of net pressure on pressure equalized cavities. The results based on this model show good agreement with those obtained from mock-up tests. Parametric studies verify that reductions in cladding load are possible, with proper design of curtain walls.