Dopant effects on the photoluminescence of interstitial-related centers in ion implanted silicon
This work is supported by a grant from the Australian 
Research Council. B.C.J. is partially supported by the Japan 
Society for the Promotion of Science (JSPS) (Grant-in-aid 
for Scientific Research, 22.00802).
Recombination luminescence from ion implanted silicon
Abstract Peaks at 0.790, 0.970, 1.018, 1.080, 1.034 and 1.039 eV in the photoluminescence spectra observed from pulled, float zone, and Lopex silicon implanted at room temperature with 150 keV boron and phosphorus ions to fluences from 1012 to 1015 ions/cm2 are reported. Data is presented describing the effects of annealing, fluence, ion species and substrate on these lines and defect models are proposed for the recombination centers.
Low-temperature photoluminescence from boron ion implanted Si
Abstract Low-temperature photoluminescence has been used to investigate the lattice damage created by boron ion implantation in Si. Silicon wafers were implanted with 120 keV B+ ions to fluences of 1013 and 1014 ions/cm2 at room temperature. Annealing effects and the flux dependence of the luminescence spectra are reported. In agreement with previous results for electron irradiation, luminescence peaks attributed to the divacancy and the Si-G15 (K) center are observed. In addition, zcro-phonon peaks which are not found in electron-irradiated Si are reported. These new peaks may be due to cluster defects containing boron.