The origin of extended dislocations induced by high-dose ion implantation
The origin and the generation mechanism of ion implantation-induced dislocations is investigated with an Si/sub 3/N/sub 4/ band line/space pattern. The Si/sub 3/N/sub 4/ film-edge stress not only causes dislocation propagation but also causes the formation and deformation of extended dislocations at the initial stage of annealing. The behavior is clarified that the dislocation loops are deformed into pattern-edge dislocation half loops, which accumulate at the film edge and are punched out from the edge.
Lattice Defects in High-Dose As Implantation into Localized Si Area
Cross-sectional transmission electron microscopy observations have been carried out to clarify two-dimensional depth distributions of lattice defects generated in high-dose (5×1015 and 2×1016 ions/cm2), 80 and 150 keV As-implanted, and annealed Si through 1.0 and 1.5 µm windows on (100) Si. Amorphous Si (a-Si) layer thicknesses formed by implantation range between projected range, Rp, +(5∼6) standards deviation, ΔRp, with a lateral spread of about 0.18 times a-Si thickness under the mask edge. Typical post-annealed, induced defects in such amorphous layers are mask edge defects composed of dislocation lines caused by a complicated process for recovering mask edge amorphous layers, together with commonly observed dislocation loops in high-dose As implantation. Interaction between dislocation loops and knocked-on oxygen atoms is discussed, particularly concerning the elimination or survival of As-rich precipitate-induced dislocation loops.
Measuring Sheet Resistances of Dielectrics Using Co‐Planar Hydrogel Electrochemical Cells with Practical Applications to Characterize the Protective Quality of Paints on Sculptures
Electrical properties of thin dielectric films at the solid-liquid phase boundary are an important performance characteristic of many devices, coatings and sensors. In this paper, co-polymeric hydrogels of polyacrylic acid co-sulfonic acid, swollen with a salt solution to act as the solid electrolyte, were used to assess interfaces using electrochemical impedance spectroscopy (EIS) in a co-planar geometry. Silane-modified glasses were characterized by the co-planar hydrogel EIS cell and found to be distinguishable based on their surface monolayer chemistry. EIS measurements were also made on primed and painted metal substrates, using both test panels and an outdoor sculpture, Tony Smith's Stinger. The panels were then exposed to accelerated and outdoor weathering and showed degradation on the surface paint layers, which was observable electrochemically using EIS and confirmed visually by SEM. Electrochemical spectral features were compared between data from a standard paint-test cell versus this co-planar hydrogel cell; both cell types were able to measure coating capacitance, providing useful information about the condition of the bulk coating. Yet, sheet resistance (Rs) was a spectral feature seen only by the co-planar hydrogel cell. Thus, it can be concluded that the use of such co-planar hydrogel cells can provide an earlier warning sign to coating degradation and such cells provide a new type of spectral information that is not assessable by the standard geometry.