DC-2 GHz low loss cryogenic InAs/AlSb HEMT switch
A DC-2 GHz InAs/AlSb HEMT MMIC single pole double throw (SPDT) switch designed for cryogenic temperature has been fabricated and characterized. This switch is suitable for low RF power applications that require low insertion loss and high isolation. At 2 GHz, the SPDT switch demonstrated a typical low insertion loss of 0.7 dB at 300K and 0.3 dB at 90K. The isolation is greater than 40dB for both temperatures. These results demonstrate the outstanding potential of ABCS HEMT technology for low loss SPDT switches for cryogenic temperature.
Sb-HEMT: Toward 100-mV Cryogenic Electronics
In this paper, we present a first full set of characteristics (dc, fT, fmax, and noise) of InAs/AlSb high-electron mobility transistors (HEMTs) operating under cryogenic temperature and low-power conditions. Those results are systematically compared and deeply analyzed at room temperature and 77 K. The characteristics improvement achieved at 77 K open up the possibility to develop ultralow-power cryogenic electronics (low-noise amplifier), featuring excellent high-frequency/noise performances below 100-mV dc biasing.
Investigations of dielectric gratings using electrodynamic models based on volume integral equations
Eigenmodes of planar and cylindrical dielectric gratings (DGs) and electromagnetic wave scattering from multiplayer DGs are investigated. The DG characteristics are calculated using numerical-analytical solution of integral equations (IEs).