Dissolution of electrically inactive phosphorus by low temperature annealing
In this study we investigate the dissolution of electrically inactive phosphorus complexes by low temperature annealing after the POCl3 diffusion process. This has the immediate consequence that the existing near-surface emitter volume SRH recombination can be reduced. Thereby, a significant reduction of emitter saturation current density j0E is achieved without driving the emitter further into the silicon substrate. For short-term temperature treatments well below the POCl3 diffusion temperature, a reduction of up to -60 fA/cm2 has been achieved. This study increases our understanding of the formation and dissolution of electrically inactive phosphorus complexes during post-annealing processes.
On the mechanism responsible for phosphorus inactivation in heavily doped silicon
Abstract The two proposed mechanisms of phosphorus inactivation in heavily doped silicon (precipitation and neutral E centres) are compared. Four independent measurements (differential resistivity abd Hall mobility, neutron activation analysis, etch rate, and Rutherford backscattering) show that the precipitation mechanism prevails.
Only the Third Heaven?: 2 Corinthians 12.1-10 and Heavenly Ascent
CHAPTER 1 General Introduction PART 1: Texts of Heavenly Ascent CHAPTER 2 Introduction: Heavenly Ascent Texts: A History of Scholarship CHAPTER 3 Jewish Apocalyptic Texts Pre-70 AD CHAPTER 4 Jewish Apocalyptic Texts Post-70 AD. CHAPTER 5 The New Testament CHAPTER 6 Post-Biblical Early Christian Apocalypses CHAPTER 7 The Nag Hammadi Codices CHAPTER 8 The Hekhalot Literature CHAPTER 9 Conclusions to Part One PART 2: 2 Corinthians 12:1-10 and Heavenly Ascent CHAPTER 10 2 Corinthians 12: 1-10 as a Heavenly Ascent CHAPTER 11 2 Corinthians 12.1-10 as a Subversion of the Heavenly Ascent CHAPTER 12 General Conclusions.