129 I and 119 Sn Mössbauer spectroscopy , reversibility window and nanoscale phase separation in binary Ge x Se 1 x glasses
The molecular structure of the prototypical chalcogenide glass system—GexSe1 x in the 0oxo3 range, has received much scrutiny over the years. These glasses have been probed by modulated DSC, Raman scattering, Sn absorption and I emission Mössbauer spectroscopy, and neutron scattering. The I measurements utilize Te parent as a dopant in glasses, and reveal a bimodal (A, B) distribution of sites, with the site intensity ratio, IB/IA (x), tracking changes in glass structure as a function of x. At low x (o0.15) Senchains are stochastically cross-linked by Ge additive, and IB/IA (x) sharply declines with x. But at x40:15, rigid regions nucleate at the expense of floppy ones, and the ratio IB/IA (x) reverses slope to display a global maximum in the 0:20oxo0:25 range. The latter coincides with the reversibility window usually taken as signature of self-organization of these networks. At x40:26, these glasses enter a stressed-rigid elastic phase and in the 0:31oxo1 3 range nanoscale phase separate into Se-rich and Ge-rich regions. The signature of the latter is saturation of IB/IA (x) at a high value of 1.5 at x 1⁄4 13. Sn Mossbauer spectroscopy measurements independently support the picture of broken chemical order of the stoichiometric glass inferred from the I Mössbauer experiments. These observations using local probes are well correlated to Raman scattering, modulated differential scanning calorimetric and diffraction measurements. r 2006 Elsevier B.V. All rights reserved. PACS: 61.40.Fs; 63.50.+x; 78.30.Ly; 76.80.+y
Femtosecond Laser Deposition of Germanium Selenide onto Silicon Platform at Different Substrate Temperatures
Germanium selenide (GeSe) thin films were fabricated by employing femtosecond pulsed-laser deposition (fs-PLD) on silicon (100) substrates at various substrate temperatures, ranging from 25 °C to 600 °C. The thin films’ surface morphology qualities and optical properties were studied by utilising transmission electron microscopy (TEM) and X-ray diffraction (XRD). The X-ray diffraction result signifies that the thin films deposited on the silicon at a substrate temperature below 400 °C were amorphous Ge-Se. In contrast, those grown at 400 °C and above exhibited crystallised peaks of Ge-Se orthorhombic and tetragonal structures. The deposition growth rate of the thin films was also found to decrease substantially with increasing substrate temperature. These results show that the fs-PLD process has great potential for fabricating good quality Ge-Se thin film. This technique could enable the manufacture of modern optoelectronic devices for applications in optical communication, sensing, and ovonic threshold switching for the high-density crossbar memory array.
Chemical aspects of glass formation in telluride systems
Abstract The compositional dependence of the electrical activation energy, the optical absorption and the glass transition temperature in typical binary, pseudo-binary and ternary glass forming telluride systems has been measured in an effort to correlate chemical binding with physical properties. A modification of the valency satisfaction model to include chemical ordering effects is required to account for the property singularities observed in the GeTe system at the composition GeTe2. The ordering effects in Te-based alloys containing Ge are further verified by an endothermic disordering reaction in these liquids peaking between 400–475°C depending on composition.