EFFECT OF FLUX SYSTEMS ON ELECTROCHEMICAL MIGRATION OF LEAD-FREE ASSEMBLY
The reliability concerns regarding surface insulation resistance (SIR) and electrochemical migration (ECM) have been significantly raised in the printed circuit board (PCB) assembly with wide adoption of lead-free assembly materials and process. Moreover, the miniaturization trend of the electronic industry also increases the sensitivity of the functional assemblies to surface contamination and flux residues. There are numerous SIR reliability testing methods and standards, such as IPC, JIS, Bellcore, and Bono, whose predictive power will depend on the field of application including temperature, relative humidity and electric field. Each standard is limited in essence, because the failure mechanism is strongly affected by the chemistry of the assembly materials, e.g. soldering flux, paste, and substrate materials, which will perform differently under various conditions. This paper presents a summary and comparison of the major SIR reliability standards currently in use in the industry, and discusses the impact of the different flux systems on the failure mechanisms.
“ PARTIALLY-ACTIVATED ” FLUX RESIDUE IMPACTS ON ELECTRONIC ASSEMBLY RELIABILITIES
The reliabilities of the flux residue of electronic assemblies and semiconductor packages are attracting more and more attention with the adoption of no-clean fluxes by majority of the industry. In recent years, the concern of “partiallyactivated” flux residue and their influence on reliability have been significantly raised due to the miniaturization along with high density design trend, selective soldering process adoption, and the expanded use of pallets in wave soldering process. When flux residue becomes trapped under low stand-off devices, pallets or unsoldered areas (e.g. selective process), it may contain unevaporated solvent, “live” activators and metal complex intermediates with different chemical composition and concentration levels depending on the thermal profiles. These partially-activated residues can directly impact the corrosion, surface insulation and electrochemical migration of the final assembly. In this study, a few application tests were developed internally to understand this issue. Two traditional liquid flux and two newly developed fluxes were selected to build up the basic models. The preliminary results also provide a scientific approach to design highly reliable products with the goal to minimize the reliability risk for the complex PCB designs and assembly processes.
Physical Processes in Inorganic Scintillators
BASIC PRINCIPLES AND PROCESSES Physical Mechanism of Scintillation Creation of Electron Hole Pairs Excitation and Emission of Luminescence Centers Scintillation Materials Halides Oxides and Oxide Systems Chalcogenides Glasses Interaction of Ionizing Radiation with Scintillators High Energy Photons Charged Particles Neutral Particles General Characteristics of Inorganic Scintillators Light Yield Duration of Scintillation Pulse Afterglow Temperature Response Optical Properties Radiation Hardness Density Emission Spectra Mechanical and Chemical Properties Physical Parameters Cost Consideration Scintillator Requirements in Various Applications High Energy Physics Intermediate Energy Physics Positron Emission Tomography Gamma Spectroscopy Energy Resolution Intrinsic Scintillator Resolution Nonproportional Response Time Resolution Low Energy Quanta and Electrons CONVERSION OF ELECTRONIC EXCITATIONS IN SOLIDS Charge Carrier Behaviors Delta Rays Secondaries Excitation of Luminescence Centers Effect of Ionization Density Energy Losses Simple Phenomenological Model Plasmon Model Polaron Model Scintillation Yield Spectra Vacuum Ultraviolet Region Ultrasoft X-Rays X-Rays Gamma Rays Heavy Ionizing Particles INTRINSIC LUMINESCENCE OF INORGANIC SCINTILLATORS Excitonic Luminescence Alkali Halide Crystals Alkaline-Earth Fluorides Ternary Halide Compounds Excitonic-Like Luminescence Cesium Iodide Tungstate and Molybdate Phosphors Core-to-Valence Transitions First Evidence for Radiative Core-to-Valence Transitions Excitation Spectra Emission Spectra Experiment Theory Luminescence Kinetics Experimental Theoretical Investigations Temperature Dependence of Luminescence Parameters Conditions of Detection Prospects for Research EXTRINSIC LUMINESCENCE OF INORGANIC SCINTILLATORS Thallium-Activated Halide Scintillators Crystals with NaCl-Type Structure Crystals with CsCl-Type Structure Other Thallium-Based and Thallium-Doped Crystals Crystals Containing Other ns2 Ions Bismuth Germanate (BGO) Sodium-Activated Cesium Iodide Rare-Earth-Activated Crystals General Considerations Europium-Activated Crystals Cerium-Activated Compounds Preliminary Comments LaF3-CeF3 Systems Cerium Chloride Barium Fluoride Gadolinium-Containing Crystals Lu- and Y-Containing Crystals Nd- and Pr-Activated Crystals DEFECT FORMATION BY IONIZING RADIATION Effect on Scintillator Characteristics Mechanisms of Defect Formation Efficiency of Defect Production Geometrical Factor Separation between F and H Centers Temperature Dependence of Production Efficiency Role of Halogen Ion Impurities Effect of Cation Impurities Formation Time of F-H Pairs Closing Comments References Index