Al2O3/InSb/Si quantum well MOSFETs having an ultra-thin InSb layer
The fabrication and the properties of Al2O3-InSb-Si QW MOSFETs having an ultra thin InSb channel layer is reported. The good characteristic of ID-VD with an transconductance of 67 mS/mm demonstrates that the ultra thin InSb channel layer grown directly on Si can be used for MOSFET channels. The results show that the InSb/Si pseudomorphic quantum well MOSFETs is a promising candidate for future VLSIs.
Heteroepitaxial growth of rotated InSb films on a Si(1 1 1) substrate via 2×2-In surface reconstruction
Abstract The heteroepitaxial growth of InSb films via In-induced surface reconstructions such as 2×2-In and √3×√3-In on a Si(1 1 1) substrate was carried out by using a two-step growth procedure in an ultra-high vacuum (UHV) chamber. The samples were characterized by high-energy electron diffraction (RHEED), X-ray diffraction (XRD), scanning tunneling microscopy (STM) and Hall measurements. The RHEED and XRD ( φ scan) patterns of the samples showed the existence of InSb crystals rotated by 30° with respect to Si substrate. From comparison between the growth of InSb films via 2×2-In and that via √3×√3-In, we found that the origin of the 30°-rotated InSb is due to the existence of the In–Sb bi-layer formed by 1 monolayer (ML) Sb deposition onto the In-induced surface reconstructions.
Influence of mechanical faults on electrical resistance in high voltage circuit breaker
Abstract The health of contact sets is one of the most critical factors for the breaking capacity of the high voltage circuit breaker. Dynamic resistance measurement is considered to be an effective method to assess the erosion degree of the contact sets. However, the electrical resistance may be influenced by many other mechanical faults which will cause the misdiagnosis of the contact sets. At present, the influence mechanism has not been clarified. Therefore, the influence mechanism and degree of mechanical faults (stress relaxation, fatigue, friction) of contact sets is studied in the present paper. Firstly, the accelerated stress relaxation experiments of CuW alloy, the fatigue experiments of contact sets, and the mechanical friction experiments are carried out to obtain the relationship between the fault degree and the electrical resistance. Secondly, the fatigue fracture, micromorphology, energy dispersive spectroscopy, and metal loss of the contact sets are investigated. Thirdly, the stress distribution and fatigue fracture of the contact finger is analyzed by the finite element method. Based on the above works, the fatigue damage, and the partial loss of the contact fingers are considered to be the most distinct influence on the electrical resistance curves.