The origin of extended dislocations induced by high-dose ion implantation
The origin and the generation mechanism of ion implantation-induced dislocations is investigated with an Si/sub 3/N/sub 4/ band line/space pattern. The Si/sub 3/N/sub 4/ film-edge stress not only causes dislocation propagation but also causes the formation and deformation of extended dislocations at the initial stage of annealing. The behavior is clarified that the dislocation loops are deformed into pattern-edge dislocation half loops, which accumulate at the film edge and are punched out from the edge.
Controlled nucleation of dislocations by a spatially localized stress field
We analyze the nucleation of dislocations in silicon at spatially localized stress fields generated by silicon nitride pads having a high intrinsic stress. The nucleation and final configuration of the dislocations were studied using hot-stage transmission electron microscopy and were compared with dislocation simulations based on calculations of the stress fields around the pads. We find that the simulated configurations match well with the experimental data, and we show that the dislocation configuration can be controlled by the pad size.
Mathematical Simulation of Combustion of Boron Powder Gas Suspension
Based on a two-phase two-velocity model of a reacting gas-dispersed medium, a mathematical model of combustion of a boron powder gas suspension has been formulated. The results of numerical solution of the problem are presented. The influence of the composition of the gas suspension, its size, size distribution of particles, mass concentration of particles, as well as of the presence of aluminum powder in the suspension on the visible and normal velocities of flame propagation in the gas suspension, is shown. A comparison of the results of calculation with the well-known experimental and theoretical data is carried out. Satisfactory agreement of the predicted results with experimental data is shown.