Low Turn-on Voltage InGaP / GaAsSb / GaAs DHBT Grown by MOCVD
In this work, an InGaP/GaAsSb/GaAs DHBT with carbon doping up to 4E19/cm GaAsSb base was studied. A current gain of 115 at the collector current density of 25KA/cm2 was achieved for the Rbs of about 530ohm/sq. Over 100mV turn-on voltage and knee voltage reduction and 2/3 offset voltage were obtained for the GaAsSb based HBT compared with the standard InGaP/GaAs SHBT. The DC gain of the device is less temperature dependence (the DC gain variation is less than 3% for the temperature range from 25 degree C to 100 degree C.) due to the larger valence band discontinuity between InGaP emitter and GaAsSb base, compare with the standard InGaP/GaAs SHBT. These results indicate that GaAsSb is a great choice for the base material of a low turn-on voltage HBT.
Low turn-on voltage InGaP/GaAsSb/GaAs double HBTs grown by MOCVD
A novel InGaP/GaAs/sub 0.92/Sb/sub 0.08//GaAs double heterojunction bipolar transistor (DHBT) with low turn-on voltage has been fabricated. The turn-on voltage of the DHBT is typically 150 mV lower than that of the conventional InGaP/GaAs HBT, indicating that GaAsSb is a suitable base material for reducing the turn-on voltage of GaAs HBTs. A current gain of 50 has been obtained for the InGaP/GaAs/sub 0.92/Sb/sub 0.08//GaAs DHBT. The results show that InGaP/GaAsSb/GaAs DHBTs have a great potential for reducing operating voltage and power dissipation.
Rotational Analysis of the CrO Bands
The (0, 1), (0, 0) and (1, 0) bands of the CrO, which appear in the red and yellow region, are analysed rotationally, and we have been able to show that these bands owe to the transition 5 Π- 5 Π. We have shown the theoretical formulae for the quintet state, which can be applied in the case of nearly (a), and obtained the molecular constants as follows,