Fabrication of Polycrystalline Ferroelectric Gate FET Memory with an Intermediate Electrode
We fabricated a new ferroelectric gate field-effect transistor memory (F-FET) with an intermediate electrode inserted between the ferroelectric capacitor (Cf) and the metal-oxide-semiconductor field-effect transistor (MOSFET) for writing data. The structure was a RuO2 top electrode/polycrystalline ferroelectric Pb(Zr0.52Ti0.48)O3 (PZT)/(Pt/RuO2) intermediate electrode/SiO2/Si substrate. The basic operation of the new memory was confirmed by a discrete circuit that the Cf was connected serially with the MOSFET. For data writing, two positive or negative square pulses applied between the top electrode and the intermediate electrode induced the positive (Pr+) and the negative (Pr-) remanent polarizations, respectively, for coding memory states. For data reading, an unipolar square pulse train was applied between the top electrode and the source of the MOSFET, and the drain of the MOSFET was biased by a DC voltage. When the memory state corresponded to the Pr+ or the P-, the drain current (ID) was small or large, respectively. In this study, we used a polycrystalline PZT film to deal with the difficult problems of an epitaxial PZT film such as complicated techniques and high cost of products for commercialization goal.
Interaction of PbTiO3 Films with Si Substrate
An investigation was made of the reasons why ferroelectric PbTiO3 films are hard to grow on single-crystal Si substrates. PbTiO3 films were formed on Si(100) and MgO(100) single-crystal substrates, and X-ray photoelectron spectroscopy (XPS) was used to analyze the composition, chemical structure and oxidation state at the interface between the substrate and the film. It was found that lead, oxygen and silicon diffused markedly at the interface and that the PbTiO3 film experienced both a lead deficiency and Si diffusion. These phenomena are thought to be the reasons why it is difficult to form good PbTiO3 films on silicon substrates by chemical vapor deposition (CVD). It was observed that the addition of TiO2 and ZrO2 films at the interface with the silicon substrate reduced the diffusion of Si to the PbTiO3 film.
A New Vacuum Pressure Infiltration CFRP Method and Preparation Experimental Study of Composite
In order to prepare a carbon-fiber-reinforced polymer composite (CFRP) with ideal microstructure and properties, a new vacuum pressure infiltration CFRP method is proposed based on an analysis of existing CFRP preparation process methods. Research on composite material preparation systems was carried out by using this new method principle. The system mainly includes a fiber pre-forming module, a vacuum heating infiltration module, a hot-press curing molding module, and a data acquisition control module. Under the conditions of natural curing at 0 MPa + 6 h + 25 °C, vacuum heating curing at –0.05 MPa + 30 min + 80 °C, and hot-press curing at 0.7 MPa + 5 min + 50 °C, a two-dimensional (2D) CFRP with excellent microstructure and properties was successfully prepared. Observing the microstructure of the prepared composite material, it can be found that the inside of the composite material was sufficiently and uniformly infiltrated, and common preparation defects such as holes and delamination were effectively controlled. Through the performance test, the bending strength of the material reached 790 MPa.