16 W CW output power from 100-/spl mu/m aperture laser based on quantum well asymmetric heterostructure with lowest internal loss
16 W CW room temperature front facet output optical power and 72% wall plug efficiency were attained in 100-/spl mu/m-aperture laser diodes based on quantum well heterostructure with ultra wide asymmetric waveguide.
Properties of wide-mesastripe InGaAsP/InP lasers
Wide-mesastripe InGaAsP/InP heterostructure lasers emitting at 1.3–1.5 µm were grown by metal-organic chemical vapor deposition (MOCVD). Radiation-power-current and spectral characteristics of the lasers have been studied in pulsed and continuous wave (cw) operation in the temperature range of 10–60°C. The temperature of the active region of the diode laser is higher by 30–60°C than that of the copper heatsink upon saturation of the cw output power. The temperature dependence of the differential quantum efficiency strongly affects the cw output power. Output powers of 3 and 2.6 W are achieved in mesastripe lasers in cw operation, and 9 and 6.5 W in pulsed operation, at wavelengths of 1.3 and 1.5 µm, respectively.
Low-threshold oxide-confined 1.3-μm quantum-dot laser
Data are presented on low threshold, 1.3-/spl mu/m oxide-confined InGaAs-GaAs quantum dot lasers. A very low continuous-wave threshold current of 1.2 mA with a threshold current density of 28 A/cm/sup 2/ is achieved with p-up mounting at room temperature. For slightly larger devices the continuous-wave threshold current density is as low as 19 A/cm/sup 2/.