Ge quantum dots on silicon for terahertz detection
Terahertz has attracted attention from both millimeter and infrared technologies. Currently, solutions consist of expensive sensor systems limiting the amount of applications. To obtain a low cost solution, one approach is to use thermistor material based on Ge on Si quantum dots on microbolometers. It has been demonstrated that SiGe monocrystalline materials have superior properties to amorphous silicon or VOx regarding the temperature coefficient of resistivity and 1/f noise. Unfortunately, the calculated critical thickness for strained SiGe material show unreasonable layer thickness for high Ge amounts. To avoid this, Ge dots instead of SiGe layers are preferred. This article focuses on optimizing the thermistor properties of Ge-dots. All samples were grown on Si (100) substrates in a temperature range of 500-650 C at 20 torr by RPCVD. They were characterized (XRD, HRSEM and AFM etc.) determining the diameter, thickness, density and uniformity. Fourier transform photoluminescence was performed to find the spatially direct (EA) and indirect (EB) bandgap transitions.
Low-cost far infrared bolometer camera for automotive use
A new low-cost long-wavelength infrared bolometer camera system is under development. It is designed for use with an automatic vision algorithm system as a sensor to detect vulnerable road users in traffic. Looking 15 m in front of the vehicle it can in case of an unavoidable impact activate a brake assist system or other deployable protection system. To achieve our cost target below €100 for the sensor system we evaluate the required performance and can reduce the sensitivity to 150 mK and pixel resolution to 80 x 30. We address all the main cost drivers as sensor size and production yield along with vacuum packaging, optical components and large volume manufacturing technologies. The detector array is based on a new type of high performance thermistor material. Very thin Si/SiGe single crystal multi-layers are grown epitaxially. Due to the resulting valence barriers a high temperature coefficient of resistance is achieved (3.3%/K). Simultaneously, the high quality crystalline material provides very low 1/f-noise characteristics and uniform material properties. The thermistor material is transferred from the original substrate wafer to the read-out circuit using adhesive wafer bonding and subsequent thinning. Bolometer arrays can then be fabricated using industry standard MEMS process and materials. The inherently good detector performance allows us to reduce the vacuum requirement and we can implement wafer level vacuum packaging technology used in established automotive sensor fabrication. The optical design is reduced to a single lens camera. We develop a low cost molding process using a novel chalcogenide glass (GASIR®3) and integrate anti-reflective and anti-erosion properties using diamond like carbon coating.
Turbine blade temperature calculation and life estimation - a sensitivity analysis
Abstract The overall operating cost of the modern gas turbines is greatly influenced by the durability of hot section components operating at high temperatures. In turbine operating conditions, some defects may occur which can decrease hot section life. In the present paper, methods used for calculating blade temperature and life are demonstrated and validated. Using these methods, a set of sensitivity analyses on the parameters affecting temperature and life of a high pressure, high temperature turbine first stage blade is carried out. Investigated uncertainties are: (1) blade coating thickness, (2) coolant inlet pressure and temperature (as a result of secondary air system), and (3) gas turbine load variation. Results show that increasing thermal barrier coating thickness by 3 times, leads to rise in the blade life by 9 times. In addition, considering inlet cooling temperature and pressure, deviation in temperature has greater effect on blade life. One of the interesting points that can be realized from the results is that 300 hours operation at 70% load can be equal to one hour operation at base load.