3D position sensing on UltraPeRL CdZnTe detectors
Experimental results of depth and lateral position sensing on UltraPeRL pixellated CdZnTe detectors using signal ratios are presented. Each detector employs one CdZnTe crystal of 20 mm times 20 mm times 5 mm with 8 times 8 pixel electrodes fabricated on the anode surface. The anode pixel pitch is 2.4 mm. The signal ratios are calculated using the signals induced on the collecting pixel and the eight neighboring pixels. The signal on each collecting pixel is then corrected for depth of interaction using the signal ratios. We obtained 7.6%, 4.2% and 2.5% FWHM energy resolution at 122 keV, 356 keV and 662 keV, respectively.
CZT imaging detectors for ProtoEXIST
We describe the detector development for a balloon-borne wide-field hard X-ray (20-600 keV) telescope, ProtoEXIST. ProtoEXIST is a pathfinder for both technology and science of the proposed implementation of the Black Hole Finder Probe, Energetic X-ray Imaging Survey telescope (EXIST). The principal technology challenge is the development of large area, close-tiled modules of imaging CZT detectors (1000 cm2 for ProtoEXIST1). We review the updates of the detector design and package concept for ProtoEXIST1 and report the current development status of the CZT detectors, using calibration results of our basic detector unit - 2 x 2 x 0.5 cm CZT crystals with 2.5 mm pixels (8 x 8 array). The current prototype (Rev1) of our detector crystal unit (DCU) shows ~4.5 keV electronics noise (FWHM), and the radiation measurements show the energy resolution (FWHM) of the units is 4.7 keV (7.9%) at 59.5 keV, 5.6 keV (4.6%) at 122 keV, and 7.6 keV (2.1%) at 356 keV. The new (Rev2) DCU with revised design is expected to improve the resolution by ~30%.
Photoreflectance characterization of vanadium-doped GaAs layers grown by metalorganic vapor phase epitaxy
Abstract We characterized the vanadium-doped (GaAs:V) layers grown on GaAs substrate by metalorganic vapor phase epitaxy. The conductivity of the samples is checked by the Hall effect measurements, and it is n type with electrons concentration ranging from 2×10 13 to 2×10 17  cm −3 . We used the photoreflectance technique (PR) to study the effect of vanadium doping on the optical properties of GaAs. Our experimental results show that the built-in electric field F and the broadening parameter Γ 0 increase with V-doping concentration. Furthermore, the temperature dependence of the built-in electric field and the broadening parameter of GaAs:V samples have been investigated by PR. It has been observed that these parameters increase with increasing temperature. The decrease of the built-in electric field with decreasing temperature is due to the photovoltage effect.We characterized the vanadium-doped GaAs (GaAs:V) layers grown on GaAs substrate by metalorganic vapor phase epitaxy.