TiCl4 Barrier Process Engineering in Semiconductor Manufacturing
Titanium nitride (TiN) not only was utilized in the wear-resistant coatings industry but it was also adopted in barrier processes for semiconductor manufacturing. Barrier processes include the titanium (Ti) and TiN processes, which are commonly used as diffusion barriers in via/contact applications. However, engineers frequently struggle at the via/contact module in the beginning of every technology node. As devices shrink, barrier processes become more challenging to overcome the both the physical fill-in and electrical performance requirements of advanced small via/contact plugs. The aim of this paper is to investigate various chemical vapor deposition (CVD) TiCl4-based barrier processes to serve the application of advanced small via/contact plugs and the metal gate processes. The results demonstrate that the plasma-enhanced chemical vapor deposition (PECVD) TiCl4-based Ti process needs to select a feasible process temperature to avoid Si surface corrosion by high-temperature chloride flow. Conventional high step coverage (HSC) CVD TiCl4-based TiN processes give much better impurity performance than metal organic chemical vapor deposition (MOCVD) TiN. However, the higher chloride content in HSC film may degrade the long-term reliability of the device. Furthermore, it is evidenced that a sequential flow deposition (SFD) CVD TiCl4-based process with multiple cycles can give much less chloride content, resulting in faster erase speeds and lower erase levels than that of conventional HSC TiN.
Low-temperature CVD TiN as a diffusion barrier between gold and silicon
Low-temperature (200°C), atmospheric pressure chemical vapor deposited (APCVD) titanium nitride films are shown to be effective diffusion barriers for the Au/TiN/Si contact scheme. The samples were analyzed by Rutherford backscattering spectroscopy (RBS), and by optical microscopy. It was found that a pure TiN layer constitutes an effective barrier for 40 min at 550°C, at which point the TiN cracks and peels. Even thin layers of TiN (200Å thick) can significantly reduce the amount of interdiffusion between the gold and silicon.
Hygroscopic Expansion of some Casting Investments
CREDIT is generally given to Taggart1 for introducing the cast gold inlay to the dental profession. Although he realized that gold shrinks when cooled from molten state to solid state of room temperature, the investment available to him did not supply sufficient compensation. In 1910, Van Horn2 published a paper dealing with a method by which he obtained the compensation by means of wax expansion. The next major research in connection with this problem was the work of Coleman3 at the National Bureau of Standards. He determined the gold shrinkage to be 1.25 per cent and presented a casting technic with compensation values of quantitative nature. The total compensation for the gold shrinkage was obtained by the combination of the setting and thermal expansion of the mold. This procedure is the general practice followed at the present time for compensation. There are some disadvantages to this method. Skinner has indicated the difficulty of obtaining smooth castings and the improper compensation for the casting shrinkage.4 It has been found by Hollenback5 and Scheu6a that castings made at a high temperature are rougher than those made at a low temperature (450° C.), depending upon the great difference in thermal expansion between plaster of Paris and silica, which causes a poor union of the fine particles. This may also result in friability and there may be some warpage due to the differential expansion. A method which provides sufficient compensation at a low mold temperature is the hygroscopic casting technic.b Wilson7 showed that certain plasters expand as much as 0.0044 inch to the inch by taking up moisture from the air. With this information at hand, Scheula, b tested some commercial investment to determine what results the addition of moisture would have. He found6b: (1) All of the casting investments that were tested expanded. (2) The thicker the mix, the greater the expansion. (3) A mix with hot water expanded more than one with cold water. (4) The time at which the mix is placed in the water is of great importance. It was found that if the mix is placed in the water early, it would not expand so much as when placed in a little later. It was also found that if the mix was placed in the water after a certain time, it could not expand to the maximal amount. (5) The temperature of the water in which the mix is placed is important, for two reasons; (a) the temperature of the water controls slightly the expansion of the investment, and (b) water at a temperature of 1000 F. slightly softens the wax pattern so that the fine margins are not marred while expansion is taking place. The mix should remain in the water at least 20 minutes to obtain the full expansion, after which time no further expansion is obtained.