Study of Extended Defect Structure Induced by Pulsed Laser Annealing in Implanted Silicon Crystals
(a) Institute of Physics, Polish Academy of Sciences, Al. Lotniko´w 32/46,PL-02-668 Warsaw, Poland(b) Institute of Experimental Physics, Warsaw University, Ul. Hoz˙a 69,PL-00-681 Warsaw, Poland(c) Institute of Electron Technology, Al. Lotniko´w 32/46, PL-02-668 Warsaw, Poland(Received October 1, 1998)An analysis of extended defects generated during annealing by pulsed excimer laser radiation in sili-con crystals implanted with Ge ions is presented. The investigation was performed by means of twocomplementary methods: the interference-polarizing microscopy and the Lang X-ray transmissiontopography. The existence of extended defects was revealed. It has been stated that the distributionof these defects depends on the distribution of the power density in the laser beam cross-section.
Theoretical Study of Recrystallization Process of Amorphous Ge Layer Subjected to Pulsed Excimer (XeCl) Laser Radiation
Transient temperature profiles have been studied theoretically in amorphous germanium thin films on the crystal substrate during heating by a single laser pulse. Computer calculations have been based on the Fourier equation of the heat flow. The calculated threshold value of the energy density for the melting the whole of amorphous layer have been reported for excimer laser radiation.
A Phenomenological Study of the Wind Band Experience: Stories of Band
A PHENOMENOLOGICAL STUDY OF THE WIND BAND EXPERIENCE: