Histogram of Exclamation Marks and Its Application for Comics Analysis
This paper proposes a histogram formed by counting the number of exclamation marks in comic books for comics analysis. Exclamation marks in comic books are used for expressing character's emotion and are depicted in frequently excited scenes. Also they are easy to detect from different comic books written by various authors. Hence we represent each comic book by its distribution of exclamation marks as a histogram and use such histogram for topic change detection and visualization of relationships between comic books. Experimental results on real comic books show that our bold approach has potential for approximating of contents of comic books by using the proposed histograms.
Panel and Speech Balloon Extraction from Comic Books
Comic books represent an important cultural heritage in many countries. However, few researches have been done in order to analyse the content of comics such as panels, speech balloons or characters. At first glance, the structure of a comic page may appear easy to determine. In practice, the configuration of the page, the size and the shape of the panels can be different from one page to the next. Moreover, authors often draw extended contents (speech balloon or comic art) that overlap two panels or more. In some situations, the panel extraction can become a real challenge. Speech balloons are other important elements of comics. Full text indexing is only possible if the text can be extracted. However the text is usually embedded among graphic elements. Moreover, unlike newspapers, the text layout in speech balloons can be irregular. Classic text extraction method can fail. We propose, in this paper, a method based on region growing and mathematical morphology to extract automatically the panels of a comic page and a method to detect speech balloons. Our approach is compared with other methods find in the literature. Results are presented and discussed.
Selective etching of InP in NaF solution
Abstract The crossing porous structure of InP has been obtained by electrochemical etching in NaF solutions. The behavior of the periodic oscillation occurs at different potential ranges for the different concentrations of solutions, and it will disappear with the concentration of the solution decreased. The scanning electron microscope (SEM) image shows that the pores have two directions on the surface and are perpendicular to each other. The two directions are assigned to [0 1 1] and [ 0 1 ¯ 1 ], respectively. The SEM image of the cross-section also shows that the two directions are assigned to [1 1 1]B and [ 1 1 ¯ 1 ¯ ]B. Both are due to the selective etching of F− ions. The crossing porous structure of InP is a very promising feature for the three-dimensional structure of III–V compound semiconductors for photonic band gap materials.