Bi/In bimetallic thermal resists for microfabrication, photomasks, and micromachining applications
Bilayer Bi/In thin films form thermal resists with many new microfabrication and micromachining applications due to their changed physical, chemical and optical characteristics after the laser exposures. Wavelength invariance has been shown from the results of both experiment and Airy Summation optical modeling. The modeling projects bimetallic resist sensitivity to be nearly constant at about ~7 mJ/cm2 from 248 to 13.4 nm and is still very sensitive at 1 nm in X-ray range. Two kinds of acid solutions were effective in developing the exposed films by removing the unexposed area. Both nitric acid mixture (HNO3:CH3COOH:H2O=1:3:6) and hydrochloride acid mixture (HCl:H2O2:H2O=1:1:48) give etching selectivity of exposed to unexposed area of larger than 60:1. The etch rate of unexposed area is about 2.6 nm/sec. The Bi/In resist can be stripped away by an RCA2 clean. Bi/In resist was successfully used as a mask layer for KOH anisotropic silicon etching process. Due to the unusual conductive property of its exposed and developed films, Bi/In has demonstrated that it can be used as a direct laser write electroplating resist material. Copper and nickel plating was carried out on developed Bi/In layers on various substrates such as Si wafers, glass slides, wet-oxidized wafers. Large optical transmission changes (OD>3.5 before exposure and OD<0.3 after exposure at I-line) indicate that Bi/In can be used as a direct-write photomask material.
Wavelength-Invariant Resist Composed of Bimetallic Layers
Two layer co-sputtered Bi over In thin films (40 nm/layer) act as a microfabrication resist with many potential applications. Their physical, chemical and optical characteristics change after laser exposures that produce a rapid thermal anneal in selected areas. Unlike organic photoresists, Bi/In is a bimetallic thermal resist whose sensitivity shows a near wavelength invariance for wavelengths from Near IR to UV. The laser-induced patterns are developed by an etch that selectively removes unexposed areas and retains converted ones. The optical density (OD) of 40 nm thick Bi/In films on quartz substrates, for example, changes from 3.3 OD to 0.37 OD in the annealed area. This has enabled the creation of direct-write photomasks for standard photoresist exposures. In this paper, the composition, morphology, and nanostructure of the resist before and after laser processing were studied in order to determine the mechanism of the laser-induced material conversion. AFM, XRD, and TEM show that the as-deposited films are polycrystalline, continuous, but with a rough, island morphology. Furnace anneals in air above the eutectic temperature (150-250°C, 3 hours) result in the formation of the tetragonal phase BiIn with a small degree of oxidation. The island morphology is maintained but there is evidence of melting and recrystallization. Transparency is much lower than after laser annealing. RBS and NRA depth profile analysis show that Bi/In films exposed to laser annealing in air contain a large fraction of oxygen and suggest that the converted film may be a BiIn0.6O6 /Bi0.3InO6 bilayer.
Magnetic properties of Lu2Fe17 crystals
Abstract We present the results of crystal structure and magnetization studies of three single crystals grown from melts of different nominal compositions in the vicinity of the Lu2Fe17 stoichiometry. The ferromagnetic state of the crystals is strongly dependent on the real sample composition and the local atomic ordering. A drastic difference is observed in the behaviour of the ferro–antiferromagnetic transition, even in crystals for which almost identical composition and crystal parameters were determined by microprobe and X-ray analysis.