Transferring porous layer from InP wafer based on the disturbance
We present a new method to transfer the three dimensional (3D) porous layer from InP wafer based on the disturbance, during electrochemical etching of n-InP (100) with chronopotentiometry with current ramp in 3 mol-L−1 NaCl solution. The potential bursting phenomenon was observed due to the disturbing instantaneously. In addition, the correlation between the amplitude of the potential and the porous layers separated from the InP wafer was discussed.
Observation of New Oscillatory Phenomena during the Electrochemical Anodization of Silicon
This paper reports the observation of large undamped voltage oscillations during the anodic polarization of silicon in electrol yte containing a combination of acids. One of them stimulates oxide growth and the other its chemical dissolution (in the present c ase, (0.01-0.1 M H3PO4) + (0.001- 0.01 M HF). This temporal patterning of the anodization process is shown to be due to the formation of a thin (50-90 nm) oxide layer at the sample surface and its subsequent lifting-off. The mechanism of oxide detachment i s thought to be an isotropic growth of micropores at the oxide/silicon interface triggered on by changes of electrochemical condi tions there.
Finite Difference Modeling on the Temperature Field of Substrate in Friction Surfacing
Friction surfacing is an advanced process of great potential, especially in the field of repair and reclamation of worn and damaged components. As a kind of thermal processing technology, the temperature profile and changes of the substrate in friction surfacing are important factors to get coatings of high quality. In this paper, the temperature field of the substrate during the process is simulated by finite difference method. The results are consistent with experiments, reappearing the temperature change of the substrate during friction surfacing, allowing further study on figuration and quality of coatings.