Morphological analysis of SSM Al-4.5wt.% Cu measured by the rheocast quality index
Abstract There is a direct relationship between grain size obtained from macrostructure characterisation and the globule size and shape factor, obtained from microstructure characterisation: the smaller the grain size, the smaller the globule size and shape factor. Due to this a rheocast quality index ( RQI = globule size /( grain size × shape factor) ) was used to evaluate the Al–4.5 wt.% Cu alloy produced by strain induced melting activation (SIMA). The structure that presents the smallest grain size, the smallest shape factor, and the most homogeneous and globular size of the primary phase, has the best RQI and consequently the best behaviour in the semi-solid forming. Four different as-cast structures were cold rolled to obtain 20 and 40% deformation and were partially melted at 635 °C at holding times of 5 min. Both, macro- and microstructure were characterised.
The osprey process: principles and applications
Spray forming in the Osprey mode involves the sequential stages of atomization and droplet consolidation to produce near-net shape preforms. This review traces the history and development of the process with particular reference to the processing science base and attendant metallurgical principles. The process has been scaled up for the fabrication of tubular and billet-shaped products in stainless steels, superalloys, cast irons, tool steels, aluminum alloys, and copper alloys. Alloy development via spray forming has resulted in improved mechanical properties, compared to ingot metallurgy
Bevel RIE application to reduce defectivity in copper BEOL processing
Bevel etch used during wafer fabrication for semiconductor devices is discussed. In this case, the bevel etch process was utilized in middle of the line processing (MOL) to reduce back end of line (BEOL) defectivity. Tungsten and titanium nitride films, from the formation of contacts to the transistors, extend into the bevel region of the wafer and have been shown to initiate arcing. This can spread foreign material defects on the front side of the wafer in various BEOL post processing steps including subsequent reactive ion etching, SEM metrology and film depositions. The bevel etch tool confines a plasma etch to the outer edge of the front side of the wafer (which can be individually adjusted) and can remove dielectric, organic and Ti/TiN/W films using a fluorine based chemistry.