Capping of InAs/GaAs Quantum Dots for GaAs Based Lasers
Nowadays, self-assembled InAs quantum dots grown on GaAs substrates are intensively studied due to their potential applications: quantum dot ensembles are employed in laser active regions and mid-infrared detectors, single quantum dots have a potential for application in memories, two-level information processing or single photon sources (Henini& Bugajski, 2005; Mowbray& Skolnick, 2005; Battacharya, 2007).
In situ surface passivation of III–V semiconductors in MOVPE by amorphous As and P layers
Abstract A new process for chemical passivation of III–V semiconductor surfaces in metalorganic vapour phase epitaxy (MOVPE) is developed. A passivation layer is deposited directly after growth in the reactor. It consists of amorphous arsenic or a double-layer package of amorphous phosphorus and arsenic, which are grown by photo-decomposition of the group-V hydrides. These layers (caps) serve to protect the surfaces against contamination in air after removing the samples from the MOVPE growth reactor. Such passivation is applicable e.g. for a two-step epitaxy or for further surface characterizations.
An analysis of patients discharged from a hospital‐based glaucoma case‐finding clinic over a 3‐year period
Purpose:  To analyse the false positive referrals by community optometrists to a glaucoma case‐finding clinic over a 3‐year period.