Nuclear magnetic resonance on oriented rare-earth nuclei in rare-earth hosts: Application to 160Tb.
We summarize the application of nuclear magnetic resonance of oriented nuclei to rare-earth impurities implanted in ferromagnetic crystals of heavy rare-earth hosts. The experimental aspects are treated in some detail; we present results obtained on $^{160}\mathrm{Tb}$$\mathrm{Tb}$, and give a formal description of the experiments. A discussion of extension to other, similar systems with applications in nuclear, solid-state, and low-temperature physics is given.
High-resolution measurement of NMR-ON for191PtFe
NMR-ON measurements on191PtFe were repeated to look for a reported quadrupole splitting effect: a sample annealed at 850°C and measured at 15.1(6) mK gives a spectrum with a single gaussian peak with a line width of 0.39(4) MHz, the narrowest ever observed. The spectrum obtained with another sample annealed at 650°C and measured at 8.3(4) mK resembles one with a quadrupole splitting, but the ratio of the second sub-resonance to the first is inconsisten with the estimation from a model which takes account of a quadrupole splitting and fast relaxation limit. The present study shows the quadrupole splitting ofvQ (191PtFe)≤0.86 MHz.
Photoreflectance characterization of vanadium-doped GaAs layers grown by metalorganic vapor phase epitaxy
Abstract We characterized the vanadium-doped (GaAs:V) layers grown on GaAs substrate by metalorganic vapor phase epitaxy. The conductivity of the samples is checked by the Hall effect measurements, and it is n type with electrons concentration ranging from 2×10 13 to 2×10 17  cm −3 . We used the photoreflectance technique (PR) to study the effect of vanadium doping on the optical properties of GaAs. Our experimental results show that the built-in electric field F and the broadening parameter Γ 0 increase with V-doping concentration. Furthermore, the temperature dependence of the built-in electric field and the broadening parameter of GaAs:V samples have been investigated by PR. It has been observed that these parameters increase with increasing temperature. The decrease of the built-in electric field with decreasing temperature is due to the photovoltage effect.We characterized the vanadium-doped GaAs (GaAs:V) layers grown on GaAs substrate by metalorganic vapor phase epitaxy.