Novel High voltage silicon-on-insulator Device with Composite dielectric buried Layer
A novel silicon-on-insulator (SOI) high voltage device with a composite dielectric buried layer (CD SOI) is proposed in this paper. In the proposed structure, the composite dielectric buried layer consists of Si 3 N 4 dielectric and low-k (relative permittivity) dielectric. The electric field strength in the buried layer is enhanced by the low-k dielectric. The Si 3 N 4 dielectric in the buried layer not only modulates the electric field distribution in the drift region, but also provides a heat conduction path for the SOI layer and alleviates the self-heating effect (SHE). The breakdown voltage (BV) = 362 V for CD SOI is obtained by simulation on a 1 μm SOI layer over 2 μm buried layer, which is enhanced by 26% compared with that of conventional SOI.
Numerical modeling of linear doping profiles for high-voltage thin-film SOI devices
A numerical model for obtaining linear doping profiles in the drift region of high-voltage thin-film SOI devices is proposed and experimentally verified. Breakdown voltage in excess of 612 V on LDMOS transistors with 0.15-/spl mu/m SOI layer, 2-/spl mu/m buried oxide, and 50-/spl mu/m drift region is designed and demonstrated using this model. Theoretical and experimental dependence of the breakdown voltage on the drift region length are compared. Good agreement between the simulation and experimental results are obtained. Dependence of the breakdown voltage on the doping density and doping concentration slope in the linearly doped drift region is also investigated experimentally. Results indicate that an optimum concentration slope is needed in order to optimize the breakdown voltage in the thin-film SOI devices with a linear doping drift region. Finally, a 600-V CMOS compatible thin-film SOI LDMOS process is also described.
Parameters for low energy operation of CESR
We present a detailed design for operation of the Cornell Electron Storage Ring, CESR, in the energy range covering the /spl psi/ resonances and the Charm and Tau thresholds, as well as reaching to the upper Y resonances near 11 GeV. The addition of 18 m of super-ferric wiggler magnets will partially restore low energy beam emittance and damping times. Installation of superconducting quadrupoles in the interaction region and the addition of high performance superconducting RF cavities will enhance performance at all energies. Studies of optics, beam dynamics, wiggler and vacuum system performance, beam stability, and beam-beam effects confirm operation with a luminosity of 3/spl times/ 10/sup 32/ CM/sup -2/ sec/sup -1/ at 1.88 GeV.