Application of Vertical Micororeactor Stack with Polystylene Microbeads to Immuno Assay
This paper proposes a vertical microreactor stack, a new concept of the microreactor, using vertical fluid flow operation and multifunctional fluid filters and vertically stacked reservoirs. The vertical fluid flow operation utilizes the surface tension of the liquid/ gas interface and pneumatic pressure to control the liquid behavior in vertical microreactor stack. The functions as microvalve, microcahnnel and micromixer of the fluid filter are estimated by computational fluid dynamics (CFD) simulation and experiments. The enzyme linked immuno-solvent assay is demonstrated by using vertical microreactor stack and the calibration curve was successfully taken.
Large area and wide dimension range x-ray lithography for lithographite, galvanoformung, and abformung process using energy variable synchrotron radiation
We developed an x-ray lithography system for the “lithographite, galvanoformung, and abformung” process using synchrotron radiation at the NewSUBARU facility of the University of Hyogo, Hyogo, Japan. The x-ray lithography system can utilize two different energy regions: one is a high-energy region: from 2 to 12 keV, and the other is a low-energy region from 1 to 2 keV. Each energy region can be selected in accordance with the size and shape of the desired microstructures. Large-area patterning across an A4-size area was successfully performed with a highly uniform pattern thickness. Furthermore, high-aspect-ratio patterning using a high-x-ray-energy region was also achieved using this x-ray lithography system.
Characterisation of defects in very high deep-etch X-ray lithography microstructures
Abstract In deep X-ray lithography synchrotron radiation is applied to pattern several hundred micrometer thick resist layers. This technique has been used to obtain micro structures with an aspect ratio up to 100 and dimensions in the micrometer range. The structures are characterised by straight walls and a typical sidewall roughness of approximately 50 nm.To be able to fabricate n-coherent structures with any lateral shape and to have the possibility to use these resist microstructures in an additional electroforming process the resist is usually mounted on a ceramic or metallic substrate. Due to the different thermal expansion coefficients of the resist material and the substrate a developing temperature of 37 °C produces cracks in the resist structures depending on the microstructure design. These defects are not observed if the developing temperature is reduced to 20 °C. Better structure quality is obtained using the GG-developer instead of MIBK/IPA, but the developing rate is decreased. Measurements of the developing rate of PMMA in GG-developer at different temperatures show that the contrast of the developer-resist system is increased at 20 °C compared to 37 °C.