Characterization of band offset in α-(AlxGa1-x)2O3/ α-Ga2O3 heterostructures
Gallium Oxide is a promising material for power device applications. We focused on corundum structured gallium oxide (α-Ga<sub>2</sub>O<sub>3</sub>) and α-(Al<sub>x</sub>Ga<sub>1-x</sub>)<sub>2</sub>O<sub>3</sub>/ α-Ga<sub>2</sub>O<sub>3</sub> heterostructure devices. We prepared α-(Al<sub>x</sub>Ga<sub>1-x</sub>)<sub>2</sub>O<sub>3</sub> alloy and these laminate structures on c-plane sapphire substrates. The band offset of the α-Ga<sub>2</sub>O<sub>3</sub>/α-(Al<sub>x</sub>Ga<sub>1-x</sub>)<sub>2</sub>O<sub>3</sub> heterostructure was measured by X-ray photoelectron spectroscopy (XPS). The band alignment was estimated to be type I with very narrow valence-band offset energy.
Measurement of AlN/GaN (0001) heterojunction band offsets by x‐ray photoemission spectroscopy
X‐ray photoemission spectroscopy has been used to measure the valence band offset ΔEv for the AlN/GaN (0001) heterojunction interface. The heterojunction samples were grown by reactive molecular beam epitaxy on 6H–SiC (0001) substrates. A nested interface band alignment with ΔEv=1.36±0.07 eV is obtained (ΔEc/ΔEv=52/48).
Rotational Analysis of the CrO Bands
The (0, 1), (0, 0) and (1, 0) bands of the CrO, which appear in the red and yellow region, are analysed rotationally, and we have been able to show that these bands owe to the transition 5 Π- 5 Π. We have shown the theoretical formulae for the quintet state, which can be applied in the case of nearly (a), and obtained the molecular constants as follows,