Formation and microstructure of thin Ti silicide films for advanced technologies
We report on the solid-state reaction of thin PVD Ti films with in-situ doped Si & SiGe alloys using a combination of in-situ x-ray diffraction, sheet resistance, laser light scattering measurements and ex-situ x-ray pole figure analysis. Thin Ti films or thin bilayer films (Ni/Ti or NiPt/Ti) are found to be much more aligned with the underlying substrates. Millisecond laser anneals also lead to the introduction of strong in-plane texture.
Challenges of nickel silicidation in CMOS technologies
Display Omitted The evolution of CMOS technologies and of the silicidations techniques are described.A peculiar nickel monosilicide defect termed NiSi-Fang is detected and characterized.The NiSiGe formation is investigated on Si, SiGe materials and (100), (111) surfaces.A mechanism for the NiSi-Fang defect formation is proposed.This mechanism involves silicide formation, metal enrichment and metal diffusion. In this paper, we review some of the key challenges associated with the Ni silicidation process in the most recent CMOS technologies. The introduction of new materials (e.g. SiGe), and of non-planar architectures bring some important changes that require fundamental investigation from a material engineering perspective. Following a discussion of the device architecture and silicide evolution through the last CMOS generations, we focus our study on a very peculiar defect, termed NiSi-Fangs. We describe a mechanism for the defect formation, and present a detailed material analysis that supports this mechanism. We highlight some of the possible metal enrichment processes of the nickel monosilicide such as oxidation or various RIE (Reactive Ion Etching) plasma process, leading to a metal source available for defect formation. We also investigate the NiSi formation and re-formation silicidation differences between Si and SiGe materials, and between (100) and (111) orientations. Finally, we show that the thermal budgets post silicidation can lead to the formation of NiSi-Fangs if the structure and the processes are not optimized. Beyond the understanding of the defect and the discussion on the engineering solutions used to prevent its formation, the interest of this investigation also lies in the fundamental learning within the Ni-Pt-Si-Ge system and some additional perspective on Ni-based contacts to advanced microelectronic devices.
Organic geochemical characteristics and depositional setting of Tertiary organic-rich sediments from onshore Penyu Basin , eastern Chenor , Pahang , Malaysia
Poor knowledge of the organic facies characteristics of the eastern Chenor Pahang has made it remain an untapped potential in the Penyu Basin. Therefore, detailed geochemical and petrographic characterization of the Tertiary organic facies of the eastern Chenor area of the Penyu Basin was carried out to characterized its organic matter (OM) source input. Towards achieving the goal, this study focuses on determination of organic matters richness, type and origin as related to their paleoenvironmental conditions of the carbonaceous mudstone and shale using organic petrography combined with organic and inorganic geochemistry. The sedimentary succession is characterized by fine to coarse grained sandstone occurring in association with carbonaceous mudstone and shale in a predominantly fining upward sequence within a lacustrine environment. These facies are generally enriched in organic matter as indicated by the TOC results, hydrocarbon yield (S2) and extractible organic matter (EOM), suggesting significant hydrocarbon generation potential for the area.