The Photomagnetoelectric Effect in Mercury Iodide
In order to investigate the transport properties of mercury iodide, measurements of photomagnetoelectric (PME) effect and photoconductivity (PC) have been carried out. The experimental results show the presence of trapping phenomena and a strong dependence of carrier lifetimes on the light injection level. The obtained values of the lifetimes are in the range 10-7-10-6 s.
Photoelectromagnetic effect in n‐GaSe
Photoelectromagnetic (PEM) and photoconductivity (PC) measurements in n‐type GaSe monocrystals are reported. The PEM and PC currents are calculated taking into account the anisotropy of the samples. From the analysis of spectral dependence the ambipolar diffusion parameters along the c axis are calculated. Estimates of lifetime and mobilities are also obtained.
Preliminary Studies of Charge Carrier Transport in Mercuric Iodide Radiation Detectors
Mercuric iodide single crystals have been grown by static and dynamic sublimation methods. Characteristics of contacts and detector capacitance have been studied by photon excitation methods. Gamma and X-ray spectrometry has been carried out with completed detectors showing resolutions comparable to the best results published to date. A measurement of hole trapping length has been made from the spectral shapes observed and has been found to be approximately 0.3 mm. Transient waveform analysis with alpha-particle excitation shows hole mobilities of approximately 3 cm2/V-sec for a highly purified crystal and 0.05 for an expected less pure crystal. Electron mobilities of 120 cm2/V-sec are observed. An attempt is made to explain the observed transient waveforms in terms of a single dominant trap model, with only partial success. Due to the strongly excitonic character of the material, it is proposed that the unfamiliar observations made regarding transport properties with the HgI2 detectors studied may be due to exciton dissociation under high electric fields, to long exciton lifetimes and to interactions between excitons and trapping centers in the material.