Polishing damages to electrical properties of BLT thin film capacitors fabricated by damascene process of chemical mechanical polishing
BLT thin film capacitor was fabricated by the novel method of chemical mechanical polishing (CMP) process. The electrical characteristics including P-V and I-V of BLT capacitor were damaged by the polishing pressure which is one of the main factors to improve the CMP performance for BLT thin film; therefore, the lower polishing pressure must be selected for the good electrical characteristics although the removal rate was lower.
Enhancement of optical properties for CdTe absorber through improving thickness uniformity by CMP process
The enhanced optical properties including absorbance of cadmium telluride (CdTe) thin film as an absorber in heterojunctioned solar cells were experimentally obtained by the chemical mechanical planarisation (CMP) process after sputtering deposition, which had been caused by improving the thickness uniformity of the as-deposited CdTe thin film.
Role of oxidizer in the chemical mechanical planarization of the Ti/TiN barrier layer
The electrochemical parameters controlling the polishing rates of Ti and TiN are investigated. In this paper, alumina containing slurry was studied at pH 4 with 5% H2O2 as the oxidizer. Passive film formation on the surface during chemical mechanical polishing (CMP) plays an important role. To understand the oxide growth mechanism and the surface chemistry, X-ray photoelectron spectroscopy was performed. It was found that in the absence of an oxidizer, the removal of Ti and TiN is mainly due to mechanical abrasion of oxide layer or metal layer. However, in the presence of 5% H2O2 as the oxidizer, different removal behavior was observed for Ti and TiN. The removal mechanism of Ti during CMP is mainly due to mechanical abrasion of the oxide layer whereas for TiN it could be attributed to the formation of metastable soluble peroxide complexes.