Effect of Local Anisotropy Fluctuation on the Permeability of Multilayered Co-Zr-Mo-Ni Amorphous Films
To evaluate the magnetic inhomogeneities normally represented as magnetic skew and ripple, a systematic experimental investigation was carried out using the dynamic differential susceptibility measurement proposed by H. Hoffmann for multilayered CO79Zr10Mo9Ni2 amorphous films. The influence of the local magnetic anisotropy on the effective permeability μeff of the films is broadly discussed in connection with the magnetic skew and ripple. The magnitude of the μeff in low frequency regions less than 1 MHz is strongly dependent on the degree of the long period fluctuation of the local magnetization direction (skew) and the magnitude of the anisotropy field. To realize excellent soft magnetic properties in films at high frequencies (10 MHz), it is suggested that the alleviation of magnetic inhomogeneities due to the short-period fluctuation of the local magnetization direction is important.
Investigation of the Structure of Ferromagnetic Films by Means of the Differential Susceptibility
The differential susceptibility of thin polycrystalline iron–nickel-films has been measured. From the results the structure constant, S, could be determined. The experiments gave the same field dependence for the susceptibility as was expected by former calculations. The values for S, evaluated from the experiment, can be explained quantitatively by the mean crystallite diameter, the magnetocrystalline anisotropy, the magnetostriction constants, and the intrinsic stresses, if one uses the Doyle-Finnegan formula for the calculation. The measurements show quantitatively the existence of the intrinsic demagnetizing field, which has been predicted by micromagnetic calculations and which contributes to the whole effective field. 
 
 
 
Die differentielle Suszeptibilitat dunner Eisen–Nickel-Schichten wurde ermittelt und aus den Meswerten auf die „Strukturkonstante” S der Schichten geschlossen. Die Feldabhangigkeit der Suszeptibilitat stimmt mit fruheren theoretischen Vorhersagen uberein. Die experimentell ermittelte Strukturkonstante last sich quantitative aus der Kristallitgrose, den inneren Spannungen, den Magnetostriktionskonstanten und der Kristallitenergie erklaren. Die Messungen stellen einen quantitativen Nachweis des mikromagnetisch berechneten inneren entmagnetisierenden Feldes dar, welches zum gesamten Effektivfeld beitragt.
Photoreflectance characterization of vanadium-doped GaAs layers grown by metalorganic vapor phase epitaxy
Abstract We characterized the vanadium-doped (GaAs:V) layers grown on GaAs substrate by metalorganic vapor phase epitaxy. The conductivity of the samples is checked by the Hall effect measurements, and it is n type with electrons concentration ranging from 2×10 13 to 2×10 17  cm −3 . We used the photoreflectance technique (PR) to study the effect of vanadium doping on the optical properties of GaAs. Our experimental results show that the built-in electric field F and the broadening parameter Γ 0 increase with V-doping concentration. Furthermore, the temperature dependence of the built-in electric field and the broadening parameter of GaAs:V samples have been investigated by PR. It has been observed that these parameters increase with increasing temperature. The decrease of the built-in electric field with decreasing temperature is due to the photovoltage effect.We characterized the vanadium-doped GaAs (GaAs:V) layers grown on GaAs substrate by metalorganic vapor phase epitaxy.