The Peculiarities of the Electrical Conductivity of LiNbO3 Crystals, Reduced in Hydrogen
The low-frequency impedance spectroscopy method has been used to investigate the electrical conductivity peculiarities of lithium niobate (LN) crystals reduced in hydrogen. It has been found that the activation energy value of the dark electrical conductivity of such crystals in a temperature range of 288...370 К is equal to 0.68±0.02 eV. It has been demonstrated that the multiple heating of «black» LN crystals up to a temperature of about 420 K results in surface layers with modified electrical properties to occur in the crystal’s polar faces. The electrical conductivity mechanism of LiNbO3 crystals reduced in the hydrogen-containing atmosphere, and the causes of the instability of these properties are discussed.
Nonstoichiometry and electrocoloration due to injection of Li ¿ and O 2¿ ions into lithium niobate crystals
The high oxygen and lithium ion conductivity in LiNbO3 was investigated and interpreted in terms of lithium and oxygen vacancies being intrinsically present in congruently grown single crystals. As a result of this, it was found that the stoichiometry of lithium niobate crystals may be changed with respect to lithium and oxygen. The optical and electrical properties of electrically colored LiNbO3 crystals were studied and it was shown that the absorption spectra of thermally reduced and electrocolored samples are identical. Therefore, the origin of the absorption processes is considered to be the same in both cases. The formation of regions with different stoichiometry due to the injection of additional lithium or oxygen into the LiNbO3 crystals was also observed and investigated. The motion of these stoichiometric domains through a LiNbO3 crystal from one electrode to the other was studied and described in terms of electrodiffusion of the ions and electrons. A model is proposed which considers the injection of oxygen and lithium vacancies for the generation of concentration profiles in the originally homogeneous material. The numerical calculation of the concentration profiles shows good agreement with the experimental results.The high oxygen and lithium ion conductivity in LiNbO3 was investigated and interpreted in terms of lithium and oxygen vacancies being intrinsically present in congruently grown single crystals. As a result of this, it was found that the stoichiometry of lithium niobate crystals may be changed with respect to lithium and oxygen. The optical and electrical properties of electrically colored LiNbO3 crystals were studied and it was shown that the absorption spectra of thermally reduced and electrocolored samples are identical. Therefore, the origin of the absorption processes is considered to be the same in both cases. The formation of regions with different stoichiometry due to the injection of additional lithium or oxygen into the LiNbO3 crystals was also observed and investigated. The motion of these stoichiometric domains through a LiNbO3 crystal from one electrode to the other was studied and described in terms of electrodiffusion of the ions and electrons. A model is proposed which considers the inject...
Photoreflectance characterization of vanadium-doped GaAs layers grown by metalorganic vapor phase epitaxy
Abstract We characterized the vanadium-doped (GaAs:V) layers grown on GaAs substrate by metalorganic vapor phase epitaxy. The conductivity of the samples is checked by the Hall effect measurements, and it is n type with electrons concentration ranging from 2×10 13 to 2×10 17  cm −3 . We used the photoreflectance technique (PR) to study the effect of vanadium doping on the optical properties of GaAs. Our experimental results show that the built-in electric field F and the broadening parameter Γ 0 increase with V-doping concentration. Furthermore, the temperature dependence of the built-in electric field and the broadening parameter of GaAs:V samples have been investigated by PR. It has been observed that these parameters increase with increasing temperature. The decrease of the built-in electric field with decreasing temperature is due to the photovoltage effect.We characterized the vanadium-doped GaAs (GaAs:V) layers grown on GaAs substrate by metalorganic vapor phase epitaxy.