Gamma-Ray Response of Semi-Insulating CdMnTe Crystals
Semi-insulating Cd0.9Mn0.1Te:In crystals are grown by vertical Bridgman method. The segregation coefficient of Mn in CdTe is nearly 1 so that all the CdMnTe samples obtained from one ingot have nearly a same Mn composition. Also sulfur-based passivation effectively prevent the formation of Te-oxide but large amount of Mn exist as a MnO on the CdMnTe surface. The resistivity of CdMnTe samples are low 1010 Omegacm and well resolved 241Am gamma peaks are seen for all detectors. The difference in spectral response can be attributed to the effect of excess Te and conductivity change due to over-compensation induced by indium segregation in CdMnTe. The mobility-lifetime products evaluated from the dependence of peak location on the bias voltage are 1 times 10-3 cm2/V. The higher mobility-lifetime products in our CdMnTe crystals than other previous reports are assumed due to minimization of impurity contents in MnTe by several zone refining process.
Study of the charge collection efficiency of CdZnTe radiation detectors
The charge collection efficiency of CdZnTe radiation detectors with two different configurations: aSchottky diode detector and aresistive detector are compared. The average charge collection efficiencies for three different directions of irradiation (negative electrode, positive electrode and perpendicular to the electric field) are calculated. The mobility-lifetime product of the CdZnTe substrates is evaluated from the dependence of the measured spectra upon detector bias voltage. The measurement of the average charge collection efficiency is based on monitoring the shift of the peak channel with bias voltage in an experimental setup which is well calibrated. Two types of radiation are used:gamma photons from several radioactive sources andalpha particles from an241Am source. The models for the evaluation of mobility-lifetime product from the measured data for the two types of detector configurations as well as for the two types of radiation sources, are compared and discussed. The CdZnTe (Zn = 10%) substrates under study are obtained commercially and are grown by the high pressure Bridgeman method. The mobility-lifetime products and specific resistivity of the two types of detectors are evaluated and compared. A lower resistivity material has a narrower depletion region and behaves like a thinner detector thus exhibiting better collection efficiencies. Therefore, medium resistivity material which is completely inadequate for resistive detectors can still yield high performance Schottky detectors. The preferred direction of irradiation, i.e. from the negative electrode, is possible only in the case of n-type material which is reverse biased by negative voltages applied to the Schottky gate. The mobility-lifetime products that are derived on both the resistive detector (with specific resistivity of ≈1.1010 ω.cm) and the Schottky diode (with specific resistivity of ≈1.106 Ω.cm) are μnτn ≈-4.10−4 cm2V−1 and μpτp≅ 8.10−5 cm2V−1.
Segregation coefficients of Ag, Co, I and in IN CdTe
Abstract Segregation coefficients of Ag, Co, I and In have been determined by means of a new method using radioactive tracers. Radioisotopes are incorporated, without any contamination, by producing them in the CdTe specimens through the nuclear reactions, (p, n) and (γ, p). 56 Co is implanted into the specimens using the recoil energy of the reaction 56 Fe(p, n) 56 Co. Segregation coefficients are estimated using normal freezing theory from distributions of each of the radioactivities in the single crystals grown by the Bridgman method. The obtained values of the segregation coefficients on Ag, Co, I and In are 0.2, 0.3, 0.22 and 0.43, respectively.