Uniform performance of high-efficiency room-temperature GaInAsSb/GaSb photodiodes for 1.75 < lambda < 2.2 mum.
A group of 126 experimental, packaged, backilluminated, 1.75-2.2-microm wavelength, GaInAsSb mesa (~85-microm diameter) photodetectors have been assembled and evaluated. Average room-temperature properties were peak quantum efficiency, 86%; zero-bias capacitance, 3.9 pF; dark current at -0.5-V bias, 7.4 microA.
Improved very-high-speed packaged InGaAs PIN punch-through photodiode
We describe the fabrication and characterisation of an improved, coaxially packaged, back-illuminated mesa PIN photodetector utilising an InGaAs absorbing layer on an InP substrate. The measured 3 dB bandwidth is 22 GHz.
Laminar heat or mass transfer in rectangular channels and in cylindrical tubes for fully developed flow: comparison of solutions obtained for various boundary conditions
Abstract A comparison is made of results obtained with various boundary conditions at the wall of the channels. By comparing blood Sherwood numbers for finite wall resistance with those for constant concentration boundary condition only a small variation is found for various points along the blood channel.