Examining Slot Machine Play with Varying Percentages of Losses Disguised as Wins
When playing on multiline slot machine games, small " wins " often amount to less than the original spin wager, which results in a financial loss to the gambler. However, the gambler may feel as if he is winning because these " wins " are paired with audiovisual feedback. The influence of losses disguised as wins was examined to determine if this had an influence on latency, trial ratings, and the number of trials played. Thirty-one participants played a minimum of 50 trials on a simulated multi-line slot machine. The participants were divided into three groups with 16%, 30%, and 46% of trials being losses disguised as wins. Results showed that trial type had a significant impact on latency and rating, as losses disguised as wins fell between wins and losses in terms of latencies and ratings. Clinical implications and future directions are discussed.
Choice behavior of nonpathological women playing concurrently available slot machines: effect of changes in payback percentages.
In a simulated casino environment, 6 nonpathological women played concurrently available commercial slot machines programmed to pay out at different rates. Participants did not always demonstrate preferences for the higher paying machine. The data suggest that factors other than programmed or obtained rate of reinforcement may control gambling behavior, which should encourage behavior analysts to look beyond direct, contingency-driven explanations of gambling.
Photoreflectance characterization of vanadium-doped GaAs layers grown by metalorganic vapor phase epitaxy
Abstract We characterized the vanadium-doped (GaAs:V) layers grown on GaAs substrate by metalorganic vapor phase epitaxy. The conductivity of the samples is checked by the Hall effect measurements, and it is n type with electrons concentration ranging from 2×10 13 to 2×10 17  cm −3 . We used the photoreflectance technique (PR) to study the effect of vanadium doping on the optical properties of GaAs. Our experimental results show that the built-in electric field F and the broadening parameter Γ 0 increase with V-doping concentration. Furthermore, the temperature dependence of the built-in electric field and the broadening parameter of GaAs:V samples have been investigated by PR. It has been observed that these parameters increase with increasing temperature. The decrease of the built-in electric field with decreasing temperature is due to the photovoltage effect.We characterized the vanadium-doped GaAs (GaAs:V) layers grown on GaAs substrate by metalorganic vapor phase epitaxy.