The Characteristics of New n-Type Polycrystalline Silicon Thin-Film Transistors Employing Alternating Magnetic-Field-Enhanced Rapid Thermal Annealing
We fabricated a new top-gate n-type depletion-mode polycrystalline silicon (poly-Si) thin-film transistor (TFT) employing alternating magnetic-field-enhanced rapid thermal annealing. An n+ amorphous silicon (n+ a-Si) layer was deposited to improve the contact resistance between the active Si and source/drain (S/D) metal. The proposed process was almost compatible with the widely used hydrogenated amorphous silicon (a-Si:H) TFT fabrication process. This new process offers better uniformity when compared to the conventional laser-crystallized poly-Si TFT process, because it involves nonlaser crystallization. The poly-Si TFT exhibited a threshold voltage (VTH) of -7.99 V at a drain bias of 0.1 V, a field-effect mobility of 7.14 cm2/V ldr s, a subthreshold swing (S) of 0.68 V/dec, and an ON/OFF current ratio of 107. The diffused phosphorous ions (P+ ions) in the channel reduced the VTH and increased the S value.
Status of Si thin film transistors
Abstract This paper reviews fabrication processes of poly-Si thin film transistors (TFT) at a low temperature (
Submicron polymer structures with X-ray lithography and hot embossing
This article describes the process chain for replication of submicron structures with varying aspect ratios (AR) up to 6 in polymethylmethacrylate (PMMA) by hot embossing to show the capability of the entire LIGA process to fabricate structures with these dimensions. Therefore a 4.7 μm thick layer of MicroChem 950k PMMA A11 resist was spin-coated on a 2.3 μm Ti/TiOx membrane. It was patterned with X-ray lithography at the electron storage ring ANKA (2.5 GeV and λc ≈ 0.4 nm) at a dose of 4 kJ/cm3 using a Si3N4 membrane mask with 2 μm thick gold-absorbers. The samples were developed in GG/BDG and resulted in AR of 6–14. Subsequent nickel plating at 52°C resulted in a 200 μm thick nickel tool of 100 mm diameter, which was used to replicate slit-nozzles and columns in PMMA. Closely packed submicron cavities with AR 6 in the nickel shim were filled to 60% during hot embossing.