Simple, high current, antimony ion source.
A simple metal ion source capable of producing a continuous, uncontaminated, high current beam of Sb ions is presented. It produced a total ion current of 200 muA at 1 kV extraction voltage. A discharge occurred in the source at a pressure of 6x10(-4) Torr. The ion current extracted from the source increased with the 3/2 power of the extraction voltage. The perveance of the source and ion density in the plasma were 8x10(-9) and 1.8x10(11) cm(-3), respectively.
SILICON MOLECULAR BEAM EPITAXY : A COMPREHENSIVE BIBLIOGRAPHY 1962-82
We have compiled a Bibliography of over two hundred references spanning the first twenty years of Silicon Molecular Beam Epitaxy. Si-MBE is defined broadly to include a range of publications involving high vacuum deposition of silicon. This definition permits the inclusion of early work in the field and alternative approaches to epitaxial growth such as partially ionized vapor deposition, ion beam epitaxy and solid phase epitaxy. References are listed with titles in ten subject categories. Within these categories papers are listed alphabetically by first author in chronological succession. Categories are cross referenced and English translations are cited, if available. Citations are limited to works in print or accepted for publication. Following the bibliography reference numbers are listed by authors alphabetically. Categories in the bibliography are listed below : I. REVIEWS (REF. 1-8) II. EARLY RESEARCH (REF. 9-43) (papers or projects completed by 1972) III. APPARATUS (REF. 44-48) IV. SUBSTRATE PREPARATION (REF. 49-61) V. HOMOEPITAXY A. UNDOPED OR WITH EVAPORATED DOPANTS (REF. 62-106) B. IMPLANTED DOPANTS (REF. 107-119) VI. IONIZED SILICON DEPOSITION (REF. 120-138) (including partially ionzed vapor deposition and ion beam epitaxy) VII. HETEROEPITAXY A. INSULATING SUBSTRATES (REF. 139-153) B. INSULATOR/SILICON GROWTH (REF. 154-157) C. METAL/SILICON GROWTH (REF. 158-178) D. SEMICONDUCTOR/SILICON GROWTH (REF. 179-193) VIII. PATTERNED EPITAXY (REF. 194) IX. DEVICE STRUCTURES (REF. 195-204) X. NON-EPITAXIAL DEPOSITION (REF. 205-223) (including solid phase epitaxy and laser annealing using evaporated silicon, and polycrystalling silicon deposition)
Evaluation of antioxidants by a rapid polarographic method
A simple, rapid, precise, and reproducible method and an adaptable apparatus for polarographic measurement of lipid peroxidation and antioxidant activity is described. This method measures antioxidant activity within a few min time as compared to the hours or days needed for several widely used methods. Peroxidation rates were measured for different lipids as a function of amount of lipid, and amount of biocatalyst. The method is applicable to the detection and measurement of the antioxidant effects exhibited by weak antioxidants and has been satisfactorily used for the measurement of the antioxidant activity of different concentrations of powerful antioxidants.