DC-2 GHz low loss cryogenic InAs/AlSb HEMT switch
A DC-2 GHz InAs/AlSb HEMT MMIC single pole double throw (SPDT) switch designed for cryogenic temperature has been fabricated and characterized. This switch is suitable for low RF power applications that require low insertion loss and high isolation. At 2 GHz, the SPDT switch demonstrated a typical low insertion loss of 0.7 dB at 300K and 0.3 dB at 90K. The isolation is greater than 40dB for both temperatures. These results demonstrate the outstanding potential of ABCS HEMT technology for low loss SPDT switches for cryogenic temperature.
Characterization of a DC to 40 GHz SPDT switch based on GaAs mHEMT technology at cryogenic temperature
In this paper a DC to 40 GHz single pole double throw (SPDT) switch based on GaAs metamorphic high electron-mobility transistors (mHEMTs) is presented. Characterization is carried out at ambient temperature and at 15 K. The insertion loss from DC to 40 GHz is smaller than 2.2 dB and 1.5 dB at 295 K and 15 K, respectively. The isolation is better than 17 dB. The switch with a size of 1 × 1 mm2 is dedicated to multi-purpose measurement setups at cryogenic temperature, but also operates at room temperature. Bias dependency, switch design and influence of illumination are discussed additionally.
An ultra-low DC power ultra-flat multi-octave MHEMT LNA MMIC
An ultra-wideband ultra-flat ultra-low DC power consumption low noise amplifier MMIC using metamorphic InAlAs/InGaAs HEMT technology has been developed. The amplifier demonstrated a record 2.7 octave bandwidth of 1.7 to 11 GHz, with a record /spl plusmn/0.6 dB of gain ripple. The associated gain was 16.4 dB and the noise figure varied between 0.84 dB and 1.5 dB. The DC power consumption was only 10 mW. These first pass results represent state-of-the-art performance figures for wideband LNAs.