Surface topographic study of chalcogenide thin films of GexSb(As)₄₀-xS₅₀Te₁₀ glasses.
The surface topography and fractal properties of GexSb(As)40-xS50Te10 (x=10, 20, 27 at.%) films, evaporated onto glass substrates, have been studied by atomic force microscopic imaging at different scales. The surface of the chalcogenide films is smooth (<5 nm roughness), isotropic and having some particular differences in texture. All films are self-similar with Mean Fractal Dimension in the range of 2.25-2.63. The films with GexSb40-xS50Te10 composition are more uniform in terms of surface morphology (grains structure) than those with GexAs40-xS50Te10 composition for which the film surface exhibits a superimposed structure of large particles at x=10 and 20 at.%.
Optical, morphological and durability studies of quaternary chalcogenide Ge-Sb(As)-(S,Te) films
Abstract Thin films from two glassy systems of GexSb40-xS50Te10 and GexAs40-xS50Te10, with compositions x = 10, 20 and 27 at. %, were deposited on optical glass substrates by vacuum thermal evaporation of powdered parent chalcogenide glasses. The complex refractive index and dielectric constants of the films are determined by ellipsometry in a wide spectral range of 0.25–30 μm. In the transparent spectral region of 0.6–2.5 μm the refractive index values are within 2.9–2.3 and 3.3–2.4 for the As-contained and Sb-contained films, respectively. From the IR and Raman data analysis the basic chemical and oxygen-related impurity bonds are identified. The films durability properties were established by applying the US Military Standard quality tests. The quality-test-induced-changes in surface morphology were evaluated. The films are relatively stable after quality test treatments, which cause a small degree of densification and surface roughening for Sb-containing films and surface flattening for As-containing ones.
Investigating the Optical properties of cd1-xznxs thin films deposited by the Dip Technique
A Thesis submitted to the Department of Physics, Kwame Nkrumah University of Science and Technology, in partial fulfillment of the requirement for the degree of 
Master of Science (Solid State Physics)