Structual and Dielectric Properties of Pb(Zr0.53Ti0.47)O3 Thin Films Grown on LaNiO3 Buffered Si Substrates
Ferroelectric Pb(Zr0.53Ti0.47)O3 thin films with thickness of around 800 nm were prepared on LaNiO3 (LNO) buffered SiO2/Si substrates by sol-gel method. The LNO buffer layer serves as the bottom electrode and the template for growing PZT thin films with preferred orientation. The (110)-textured PZT thin films can be obtained on 250 nm-thick LNO buffered SiO2/Si substrates. Upon using the LNO buffer layer, the annealing temperature of the PZT films is lowered to 600degC. Our results indicate that PZT thin films prepared on LNO buffered Si substrates have good structural and dielectric properties for sensor and actuator applications.
Proceedings of IEEE Ultrasonics Symposium
The following topics were dealt with: SAW filters and oscillators; SAW systems and applications; SAW analysis, modelling and characterization; SAW materials and fabrication; sensors, motors and activators; physical acoustics and materials; acousto-optics; transducers, bulk waves and layers; NDE; industrial flow, ultrasonics and scattering; acoustic microscopy; tissue characterization and effects; medical imaging and arrays; flow measurement and transducers; signal processing; therapeutics
Microstructure of the solder-casting zone in bridges of dental gold alloys.
The composition and structure were studied in the cast and in the solder of bridges which had failed clinically. Both materials were gold alloys but with different contents of Pt, Ag and Zn. The metallographic investigation revealed defects mostly in the solder, situated in the subsurface layer. SEM studied of the fracture surface revealed large porosites and a structure of dense parallel lines--striations--, indicating that the material had failed from fatigue. The materials in the fractured bridges were identified by micro-probe measurements. It was stated that cast material and solder material used together, were of different composition.