Enhanced contamination control methods in advanced wafer processing
Semiconductor manufacturing is a highly complex process, with a high need for process control, but equally important are effective methods for contamination control. Methods for detection of airborne and surface molecular contaminants were enhanced to meet the increasing requirements for future More Moore and More than Moore applications. Improved qualitative and quantitative contamination analysis methods of organic and inorganic compounds allow exact monitoring of contamination in front- as well as back-end processes. By the use of state-of-the-art analytical systems combined with validated analytical procedures and advanced sample preparation techniques contamination analytical results with higher reproducibility and reliability are being ensured.
Contamination Control for Wafer Container Used within 300 mm Manufacturing for Power Microelectronics
This paper gives an overview about all activities performed within a common project between industrial and academic partners to define clean room concepts for the first worldwide high volume semiconductor front end facility IFD for 300 mm power semiconductors. The investigation within this study is the base for the 300 mm container strategy resulting in new innovative manufacturing and automation concepts.
Identification and quantification of FOUP molecular contaminants inducing defects in integrated circuits manufacturing
In the semiconductor industry, the control of contaminants is mandatory in order to prevent their detrimental impact on manufacturing yield. More specifically, it has been found that molecular contaminants coming from FOUPs could lead to defects on wafer. This paper presents two cases related with defects induced by molecular contamination, namely crystal growth and corrosion issues, respectively along two process sequences: (1) copper interconnect patterning and (2) Ionic Implantation of N-type or P-type dopants before Spacer Deposition. Three main ionic contaminants have been identified: HF, CH"3COOH, HCOOH with levels varying from few ppbv to few tens of ppbv. In the first process sequence, dry Etching step has been identified as the source of contamination. In the second process sequence CF"4 dry Stripping step generates HF. On the other hand, dry Stripping step and Implantation step generate CH"3COOH, HCOOH. Organic contaminants have been characterized showing that the FOUP atmosphere represents a contaminated environment (about few tens of ppbv for total organics). A specific organic composition has been identified for in-process FOUPs but has not been related to a process or defects.