Certification of SRM1960: Nominal 10 μm Diameter Polystyrene Spheres (“Space Beads”)
Experimental, theoretical, and calculational details are presented for the three independent micrometrology techniques used to certify the mean diameter of Standard Reference Materisd 1960, nominal 10 μm diameter polystyrene spheres (“space beads”). The mean diameters determined by the three techniques agreed remarkably well, with all measurements within 0.1% of each other, an unprecedented achievement in the dimensional metrology of microspheres. Center distance finding (CDF), a method based on optical microscopy, gave a value of 9.89 ± 0.04 μm, which was chosen to be the certified mean diameter. The supporting measurements were done using metrology electron microscopy (MEM) and resonance light scattering (RLS). The MEM technique, based on scanning electron microscopy, yielded 9.89±0.06 μm for the mean diameter of the microspheres in vacuum, while the RLS value was 9.90 ±0.03 μm for the microspheres in liquid suspension. The main peak of the diameter distribution for SRM 1960 is nearly Gaussian with a certified standard deviation of 0.09 μm, as determined by CDF. Off the main peak, there are about 1% oversized particles and a negligible amount of undersized particles. The report gives a detailed description of the apparatus, the experimental methods, the data-reduction techniques, and an error analysis for each of the micro-metrology techniques. A distinctive characteristic of this SRM is that it was manufactured in microgravity aboard the NASA space shuttle Challenger and is the first commercial product to be made in space.
Standard Reference Materials :: Description of the SRM 1965 microsphere slide/
During the NASA Apollo missions to the Moon, several elementary experiments were performed to look at what happens when liquid materials are solidified without the effects of Earth's gravity. The results of these early experiments were very interesting, prompting NASA to conduct more sophisticated materials experiments at every opportunity. From the results obtained to date, many possibilities exist for new alloys, improved semiconductors, radiation detectors of Impressive characteristics, sophisticated high technology glasses, new pharmaceutical products, and other novel materials. Can these possibilities be transformed into practical, costeffective products for the benefit of mankind? The world's technologically leading countries are trying to find out.
Photoreflectance characterization of vanadium-doped GaAs layers grown by metalorganic vapor phase epitaxy
Abstract We characterized the vanadium-doped (GaAs:V) layers grown on GaAs substrate by metalorganic vapor phase epitaxy. The conductivity of the samples is checked by the Hall effect measurements, and it is n type with electrons concentration ranging from 2×10 13 to 2×10 17  cm −3 . We used the photoreflectance technique (PR) to study the effect of vanadium doping on the optical properties of GaAs. Our experimental results show that the built-in electric field F and the broadening parameter Γ 0 increase with V-doping concentration. Furthermore, the temperature dependence of the built-in electric field and the broadening parameter of GaAs:V samples have been investigated by PR. It has been observed that these parameters increase with increasing temperature. The decrease of the built-in electric field with decreasing temperature is due to the photovoltage effect.We characterized the vanadium-doped GaAs (GaAs:V) layers grown on GaAs substrate by metalorganic vapor phase epitaxy.