The theory of the scattering-induced feeding-in in bent crystals
Abstract An analytical theory for the efficiency of scattering-induced transitions from a random to a channeled state (feed-in) in bent crystals is derived. The predictions from the theory are in good agreement with experiment and Monte Carlo simulations.
Investigation of rechanneling and dynamic equilibrium effects in crystals
Abstract The rechanneling and dynamic equilibrium effects are experimentally investigated in straight crystals at 70 GeV. Using the Lindhard reversibility rule, a qualitative analysis of the volume-capture possibilities in bent crystals is performed.
Anomalous Annealing Behavior of Arsenic Implanted Silicon as a Function of Dose and Energy
Anomalous annealing behavior of damage in As implanted Si has been investigated by channeling effect measurements. Room temperature As implants with doses from 1014 to 2 × 1016cm-2 at energies ranging from 50 to 250 keV into Si were annealed over the range of 600°C to 1100°C. Anneal temperatures ≥ 950°C reduce the disorder for ion doses of 0.5 to 1 × 1016 cm-2 at energies between 50 and 250 keV. Anomalously high residual disorder was found for the intermediate doses of 2 × 1014 to 2 × 10/cm2 implanted above 100 keV. For this intermediate dose, annealing of implants performed at liquid nitrogen temperatures did not show significant reduction in this damage. However implants at 200° to 300°C indicate a lower amount of damage compared to the room temperature implants.