Metalorganic Chemical Vapor Deposition Growth of High-Quality InAs/GaSb Type II Superlattices for Mid-IR Photodetector Applications
X. B. Zhang , A. Petschke, S. Mou , C. Xu , J. H. Ryou , S. L. Chuang , K. C. Hsieh, and R. D. Dupuis 1) Center for Compound Semiconductors and School of Electrical and Computer Engineering, Georgia Institute of Technology, 777 Atlantic Drive NW, Atlanta, GA, 30332-0250, USA 2) Micro and Nanotechnology Laboratory, University of Illinois at Urbana-Champaign, 208 North Wright Street, Urbana, IL 61801, USA
Type-II superlattice photodetector on a compliant GaAs substrate
A type-II superlattice (SL) of InAs-InGaSb has been grown on a compliant GaAs substrate by molecular beam epitaxy. This SL was designed for photoconductive infrared (IR) detection in the long wavelength IR band. The spectral photoresponse of this SL shows a sharp onset at 76.9 meV and a corresponding cutoff wavelength at 13.9 /spl mu/m. A sixfold increase in the peak photoresponse was measured in comparison to the response from a similar SL on a standard GaSb substrate.
Evolution of carbide precipitates in Hastelloy N joints during welding and post weld heat treatment
Abstract The effects of welding and post weld heat treatment (PWHT) on the morphology, composition and lattice parameter of the precipitates in the welding joints of Hastelloy N alloy have been investigated. Joint samples were prepared using a gas tungsten arc welding process with ERNiMo-2 fillers, and then solid-solution treated at 1100 °C for 20 min. After welding, eutectic M6C carbides can be observed in the heat affected zones (HAZ) and weld zones (WZ). These eutectic M6C carbides become spheroidized during the following PWHT. The concentration of Si decreases during the transformation from the primary ones to eutectic ones, and then increases during the spheroidizing process. The total concentration of Si + Cr in M6C carbides remains stable during welding and PWHT. At the same time, the heat leads to the outward diffusion of Mo from the M6C carbides, which results in a decrease of the lattice parameter.