Complementary GaAs SIS FET inverter using selective crystal regrowth technique by MBE
A first complementary GaAs semiconductor-insulator-semiconductor (SIS) FET inverter has been fabricated by constructing n-channel and p-channel GaAs SIS FET's on a single LEC GaAs substrate using MBE selective crystal regrowth technique. The fabricated inverter shows an inverter operation as a really low-power complementary inverter.
Theoretical evaluation of a novel design for digital GaAs ICs
The performance of a novel integrated logic (complementary level FET logic, CLFL) for digital GaAs ICs was investigated by circuit simulation. This novel circuit design is characterized by complementary levels and DFETs with very small negative V/sub TD/ values (V/sub TD/>or=-100 mV). The static power dissipation, the dynamic power dissipation, the propagation delay time, the dynamic logic swing, the noise margins, and the driving capability were calculated and compared with the corresponding quantities of the conventional E/D technology (DCFL). CLFL circuits are about 5-500 times less static-power-consuming than DCFL circuits at the same switching speed. Inverters with a propagation delay time of 20-100 ps have shown a minimum power-delay product of 0.1 fJ. Disadvantages are a higher number of devices (a factor of 1.2-2.1) and more extensive interconnections. >
Great American Bridges and Dams
Bridges: Spanning the Nation. Dams: Controlling a Precious Resource. Saving Bridges and Dams. Guide to the Guide. THE BRIDGES AND DAMS. New England. Mid-Atlantic. South. Midwest. Southwest. West. Epilogue: The Ones That Got Away. Further Reading. Information Sources. Index.