Optimum built-in barrier height utilizing an extended concept of impedance matching
Schottky-barrier height optimization for high-frequency usage is analytically discussed with an extended concept of impedance matching. The optimum value of 0.3 eV is almost a universal constant under various operating conditions, and agrees well with the previous prediction obtained by large signal simulation and InxGa1-xAs experiments.
Schottky-barrier devices with low barrier height
It is calculated that the barrier height of the Schottky diode has an optimum value of ∼0.3 V for the detector, the harmonic generator, and the frequency converter at high frequency. The low barrier height can be realized by the mixed crystal (n-type) composed of InAs (i.e., In x Ga 1-x As,InAs y P 1-y , and In x Ga 1-x As y P 1-y ).
Experimental energy barriers to anions transporting through nanofiltration membranes.
Environmentally relevant contaminants fluoride, chloride, nitrate, and nitrite face Arrhenius energy barriers during transport through nanofiltration (NF) membranes. The energy barriers were quantified using crossflow filtration experiments and were in the range of 7-17 kcal·mol(-1), according to ion type and membrane type (Filmtec NF90 and NF270). Fluoride faced a comparatively high energy barrier for both membranes. This can be explained by the strong hydration energy of fluoride rather than other ion properties such as bare ion radius, fully hydrated radius, Stokes radius, diffusion coefficient, or ion charge. The energy barrier for fluoride decreased with pressure, indicating an impact of directional force on energy barriers. The influence of temperature-induced pore radius variability and viscosity on energy barriers was considered. The novel link between energy barriers and ion properties emphasizes the importance of ion hydration and/or partial dehydration mechanisms in determining transport in NF.