Failure analysis on the standby current due to dislocation in STI structure of flash memory
The technology of increasing Internal Vcc without using memory tester is used to enhance the photon emission and the failure range is defined in detail by nano probing. With these methods, we found out that the leakage current was caused by dislocations of STI arranged in a row.
Case study of embedded memory failure analysis for dislocation issue
Embedded memory is an integrated on-chip memory that supports the logic core to accomplish intended functions. High-performance embedded memory is a key component in VLSI, because of its high-speed and wide bus-width capability, which eliminates inter-chip communication. In this paper, embedded memory device and CMOS logic is integrated on-chip and it is a more complex of process technology compared with stand-alone memory. For the process engineering, we are always confronted with many problems, especially, the dislocation that causes some failures.
Composite monolayer fabrication by an arc-spray process
A single layer (monotape) technique for fabricating complex high-temperature tungsten-fiber-reinforced superalloy composites is proposed. The fabrication of sheets of arc-sprayed monotape 38 cm wide and 122 cm long has been demonstrated. Composites fabricated using the method are shown to have equal tensile strength and a cleaner matrix than composites fabricated from powder metal cloth monotapes, and the present technique is less expensive than the powder metal fabrication techniques.