Structure-Designable Formation-Method of Super Low-k SiOC Film (k=2.2) by Neutral-Beam-Enhanced-CVD
Ar neutral beam enhanced chemical vapor deposition can control the dielectric constant and film modulus of low-k SiOC deposited on Si substrates precisely because it avoids precursor dissociation due to electron collisions and UV photons in plasma. Optimizing the ratio between Si-O and Si-(CH3)x as well as the proportions of linear, network, and cage Si-O structures by changing the precursor, we obtained a k of 2.2 and a reasonable modulus by using either dimethyl diethoxy silane or dimethyl dimethoxy silane as a precursor.
Low dielectric constant insulator formed by downstream plasma CVD at room temperature using TMS/O2
We present an insulator with a dielectric constant lower than 3.0, thermal stability up to 500° C and good gap-filling characteristics. This insulator was formed by downstream plasma chemical vapor deposition (CVD) at room temperature using tetra-methylsilane (TMS)/O2 gases. It contained a large amount of water in the as-deposited state. Annealing at 350° C resulted in a decrease in the water content of the insulator, and the insulator did not absorb water after the annealing. The film is constructed from Si–O and Si–CH3 bonds, which produce a low dielectric constant and high thermal stability.
Microwave source with enhanced radiation power based on orbitron MASERs
We have proposed the design of high power microwave source in a vacuum tube based on the theory of negative mass instability. The proposed source does not operate based on a slow-wave structure but instead makes use of accelerated charged particles. In our structure, an electron emitter injects the charged particles into to the cavity. Emitted particles move around the anode, which leads to electron acceleration and emission of electromagnetic waves with a specific frequency. In this paper, we have enhanced the output power and frequency of microwave source by variation of particles initial energy and the number of anodes incorporating their specific arrangement and applied voltages. Working at room temperature, compactness, wide bandwidth, and tunability of output frequency are among the advantages of the proposed source.