Electrical characteristics of Hg/sub 1-x/Cd/sub x/Te epilayers subjected to ultrasonic influence
The degradation of electrophysical characteristics of Hg1-xCdxTe thin films grown by LPE and MBE as a consequence of the high-frequency and high-intensity elastic deformation effect was investigated It was determined that parameters of Hg1-xCdxTe thin films grown by MBE are stable to ultrasonic influence whereas for Hg1-xCdxTe thin films grown by LPE the mobility decrease and the change of the conductivity type at low magnetic field wae observed The best agreement between experiment and calculation was obtained in the frame of assumption about forming of the thin layer with opposite conductivity. The possible mechanism of Ihe observing effects was analyzed.
Sonic-Stimulated Change of the Charge Carrier Concentration in n-CdxHg1-xTe Alloys with Different Initial State of the Defect Structure
Sonic-stimulated change of electron concentration in n-Cd x Hg 1-x Te alloys was investigated. The possible mechanism of the observed effects was analyzed. It was shown that the ultrasonic-induced increase of carrier concentration in n-Cd x Hg 1-x Te alloys could be connected with the activation of donor-like bound defects by acoustic wave. The value of such effect grows with increasing dislocation and low-angle boundary densities in the crystals. The resonance character of the ultrasonic influence was determined.
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