High-temperature quasi-continuous operation of optically pumped CdZnTe/ZnTe multiple-quantum-well lasers at 620 nm
Low-lasing-threshold quasi-continuous optically pumped II-VI quantum-well lasers were operated well above room temperature at 620 nm. This result shows promise for high-repetition-rate, short-pulse generation by direct modulation of the injection current and also CW operation of future wide-gap II-VI diode lasers above room temperature.<<ETX>>
Room‐temperature blue lasing action in (Zn,Cd)Se/ZnSe optically pumped multiple quantum well structures on lattice‐matched (Ga,In)As substrates
We report on studies of optically pumped laser action in (Zn,Cd)Se/ZnSe multiple quantum well structures prepared by molecular beam epitaxy on lattice‐matched bulk (Ga,In)As substrates. Room‐temperature lasing under pulsed excitation with threshold pump intensity at I≊500 kW/cm2 has been achieved, together with high repetition ‘‘quasi‐continuous’’ mode operation at temperatures so far up to 100 K.
Anomalous Annealing Behavior of Arsenic Implanted Silicon as a Function of Dose and Energy
Anomalous annealing behavior of damage in As implanted Si has been investigated by channeling effect measurements. Room temperature As implants with doses from 1014 to 2 × 1016cm-2 at energies ranging from 50 to 250 keV into Si were annealed over the range of 600°C to 1100°C. Anneal temperatures ≥ 950°C reduce the disorder for ion doses of 0.5 to 1 × 1016 cm-2 at energies between 50 and 250 keV. Anomalously high residual disorder was found for the intermediate doses of 2 × 1014 to 2 × 10/cm2 implanted above 100 keV. For this intermediate dose, annealing of implants performed at liquid nitrogen temperatures did not show significant reduction in this damage. However implants at 200° to 300°C indicate a lower amount of damage compared to the room temperature implants.