In situ scanning tunneling microscopy of InAs quantum dots on GaAs( 0 0 1 ) during molecular beam epitaxial growth
Abstract Arrays of InAs quantum dots (QDs) have been studied using in situ scanning tunneling microscopy (STM) during their growth by molecular beam epitaxy on GaAs(0 0 1). At a substrate temperature of 400 °C under As 4 flux, both the QDs and the underlying step-terrace structure of the wetting layer (WL) are found to be static, with neither step-flow nor QD ripening observed. Higher resolution images of the mature WL show slightly different [1 1 0] periodicities to those observed in quenched STM studies.
Atomistic insights for InAs quantum dot formation on GaAs(001) using STM within a MBE growth chamber.
In the Communication by S. Tsukamoto and co-workers published in Issue 3/2006 of Small, the affiliation of Dr. Tsuyoshi Honma appeared incorrectly. The correct affiliation of Dr. Honma should read as follows: Dr. T. Honma Nanoelectronics Collaborative Research Center IIS University of Tokyo 4-6-1 Komaba Meguro-ku, Tokyo 153-8505 (Japan) Dr. T. Honma Mitsubishi Advanced Technology R&D Center 8-1-1 Tsukaguchihonmachi, Amagasaki 661-8661 (Japan) [] Present address: Department of Chemistry, Nagaoka University of Technology, Nagaoka 9402188 (Japan) S. Tsukamoto,* T. Honma, G. R. Bell, A. Ishii, Y. Arakawa
Finite Difference Modeling on the Temperature Field of Substrate in Friction Surfacing
Friction surfacing is an advanced process of great potential, especially in the field of repair and reclamation of worn and damaged components. As a kind of thermal processing technology, the temperature profile and changes of the substrate in friction surfacing are important factors to get coatings of high quality. In this paper, the temperature field of the substrate during the process is simulated by finite difference method. The results are consistent with experiments, reappearing the temperature change of the substrate during friction surfacing, allowing further study on figuration and quality of coatings.