Extremely low threshold InGaSsp/InP DFB PPIBH laser diode
We report on an extremely low threshold InGaAsP/InP DFB laser realized by an MOCVD/LPE hybrid process.
Low-threshold (3.2 mA per element) 1.3 mu m InGaAsP MQW laser array on a p-type substrate
A low-threshold 1.3- mu m InGaAsP MQW laser array was fabricated on a p-type InP substrate taking compatibility with n/p/n-type laser-driver circuits into account. The laser has a p/n-type current-blocking structure and is made entirely by metal-organic chemical vapor deposition (MOCVD). A 10-channel laser array with a threshold current as low as 3.2+or-0.2 mA (per element) and a slope efficiency of 0.27+or-0.01 W/A is obtained.<<ETX>>
InP/InGaAsP p-type substrate and mass transported doubly buried heterostructure laser
A novel InP/InGaAsP buried heterostructure laser diode on p-type InP substrate has been developed. The laser has achieved a threshold current as low as 20 mA DC with high power output of 50 mW under CW operation in the fundamental transverse mode.