The comprehensive study of liquid phase oxidation on GaAs-based transistor applications
The GaAs-based HEMTs with gate oxide and HBTs with surface passivation prepared by liquid phase oxidation (LPO) will be demonstrated. As compared to the Schottky-gate HEMTs, the lower gate leakage currents, higher breakdown voltages, and improved RF performances make the proposed technique suitable for high-power and high-speed applications. Moreover, the HBTs with oxide passivation possess the characteristics of lower surface recombination currents, higher breakdown voltage, and improved higher dc current gain.
A planarized shallow-trench-isolation for GaAs devices fabrication using liquid phase chemical enhanced oxidation process
A new planarized trench isolation technique for GaAs devices fabrication by a liquid phase chemical-enhanced oxidation (LPCEO) method is proposed. The LPCEO-trench-isolation technique can be operated at low temperature with a simple and low-cost process. As compared with conventional mesa isolation, the LPCEO-trench-isolation can provide better planarity and isolation properties. Finally, GaAs MOSFETs fabricated with LPCEO-trench-isolation and selective oxidized gate both by the LPCEO method are demonstrated.
Investigations of dielectric gratings using electrodynamic models based on volume integral equations
Eigenmodes of planar and cylindrical dielectric gratings (DGs) and electromagnetic wave scattering from multiplayer DGs are investigated. The DG characteristics are calculated using numerical-analytical solution of integral equations (IEs).