Microscopic study of the surfactant‐assisted Si, Ge epitaxial growth
The Sb‐assisted Si, Ge epitaxial growth processes have been studied using high resolution photoemission. It is found that the initially ordered Sb monolayer on the Si(100) and Ge(100) surfaces occupies the epitaxial sites and fully saturates the surface dangling bonds. This results in a reduction of the surface energy. During the growth process, the Sb atoms and the deposited Si, Ge atoms change their positions. Sb atoms segregate to the growth front to form a new ordered layer while leaving the uniform epitaxial Si, Ge layer behind.
Dimer charge asymmetry determined by photoemission from epitaxial Ge on Si(100)-(2 x 1).
The charge asymmetry between the up and down atoms of an asymmetric dimer on Si(100)-(2\ifmmode\times\else\texttimes\fi{}1) or Ge(100)-(2\ifmmode\times\else\texttimes\fi{}1) is tied to the core-level energy splitting. Previous studies of the surface components in the core-level photoemission spectra disagreed on the assignments of the atomic origins, resulting in a disagreement on the charge asymmetry. The present core-level study of the growth of Ge on Si(100) shows clearly that the dimers are essentially covalent.
Geomagnetic micropulsations due to the motion of ocean waves
When sea waves move in the magnetic field of the earth, electric currents are generated in the water volume. These currents give rise to a small magnetic field which perturbs the earth's field. For plane trochoidal waves, this perturbing field decays exponentially with altitude and lies in a vertical plane which is oriented in the direction of wave propagation. The magnitude of the perturbing field also depends upon the magnitude and dip angle of the earth's field, and upon the height, wavelength, and propagation direction of the sea waves. For north-south waves, sea state 5, and an altitude of 100 feet, the perturbation is of the order of 0.1 gamma.