Structural, optical and electrical properties of nanocrystalline TiO2 -- HfO2 thin films
In the present work the properties of mixed HfxTi1-xO2 solid solution thin films in metal-oxide-semiconductor (MOS) configuration have been studied. Thin films, were grown on monocrystalline silicon substrates using the low pressure hot target reactive sputtering from the Ti:Hf mosaic target. From optical transmission measurements the 3.42 (eV) bandgap of the thin films has been estimated. Electrical characterization of the prepared MOS structures shows classical capacitance- and current-voltage behaviors indicating medium-k gate oxide properties with the low leakage current
Characterization of nanocrystalline TiO2–HfO2 thin films prepared by low pressure hot target reactive magnetron sputtering
Abstract Thin films of oxides were deposited by magnetron sputtering in reactive oxygen plasma from Ti–Hf mosaic target. The low pressure of reactive gas and appropriate power of plasma discharge during the deposition assumed pseudoepitaxial conditions of the layer growth. Thin films were characterized by means of X-Ray Diffraction (XRD), Atomic Force Microscopy (AFM), X-ray Photoelectron Spectroscopy (XPS) and optical transmission. On the basis of obtained results it was stated that the fabricated thin films were composed of the stoichiometric HfTiO 4 single phase with average size of grains in the range of tenth of nanometers. Optical absorption spectra, derived in a conventional way from optical transmission measurements, yielded the optical band gap of about 3.42 eV. The grain size has changed after annealing in the range of 30 to 40 nm.
Synthesis of ZrO2/Y2O3 by combined arc and magnetron sputtering technique
Abstract Preparation of yttria-stabilized zirconia (YSZ) films by combined reactive arc evaporation and magnetron sputtering was investigated in this work. At first, the dependencies of the film deposition rate on oxygen partial pressure, arc discharge current and magnetron discharge power were measured. After complete analysis of the process of arc-magnetron deposition, the YSZ thin films were deposited on silicon, on the alloy-600 and on the ZrO2 ceramic substrates at a substrate temperature of 400 °C. The structure and refractive index of films were investigated by X-ray diffraction and ellipsometry, respectively.