Study of Extended Defect Structure Induced by Pulsed Laser Annealing in Implanted Silicon Crystals
(a) Institute of Physics, Polish Academy of Sciences, Al. Lotniko´w 32/46,PL-02-668 Warsaw, Poland(b) Institute of Experimental Physics, Warsaw University, Ul. Hoz˙a 69,PL-00-681 Warsaw, Poland(c) Institute of Electron Technology, Al. Lotniko´w 32/46, PL-02-668 Warsaw, Poland(Received October 1, 1998)An analysis of extended defects generated during annealing by pulsed excimer laser radiation in sili-con crystals implanted with Ge ions is presented. The investigation was performed by means of twocomplementary methods: the interference-polarizing microscopy and the Lang X-ray transmissiontopography. The existence of extended defects was revealed. It has been stated that the distributionof these defects depends on the distribution of the power density in the laser beam cross-section.
Nanostructure of Si-Ge Near-Surface Layers Produced by Ion Implantation and Laser Annealing
An annealing with the nanosecond laser light pulse is applied for crystal lattice reconstruction of a disturbed near-surface layer, which was created in semiconductor material as a result of the implantation process. Radiation with energy density higher than the threshold value causes the melting of the surface layer and then the epitaxial recrystallization from the melt on a different substrate. Structural changes occurring in the Ge implanted Si crystals after annealing with different energy densities are investigated by means of the cross-section high-resolution transmission electron microscopy.
Latent heat effects of pulsed laser beam induced temperature profiles in optical recording thin films.
A numerical algorithm for the computation of the temperature profile induced by a pulsed laser beam has been developed by means of the quasi-implicit technique. In this calculation the effect of the latent heat of fusion was included in the temperature calculation. Some examples are given to demonstrate the utility of the numerical technique for calculating temperature profiles in optical recording media. The effects of various thermodynamic properties of recording media are apparent in the examples presented in this work, and the result of the calculated temperature information can be readily applied to the study of the writing mechanism. Extensions to a multilayered thin film system can be easily done simply by modifying the matrix elements which involve the interfacial layers.