Colloidal nanoparticles: Mechanisms of laser synthesis and interactions
Laser ablation in liquids is now commonly used to produce colloidal nanoparticles (NPs) that have found numerous applications in different areas. In the experiments, NPs of different materials can be rather easily produced by using laser systems with various pulse durations, shape, wavelengths, and fluence. Here, we focus our attention on metal nanoparticles produced by ultra-short laser pulses.
Modeling nanoparticle formation by laser ablation and by spark discharges
Nanoparticles have found numerous applications in such areas as photonics, electronics, medicine, etc. Further development of these fields requires reliable and versatile methods of nanoparticle synthesis with well-controlled properties. Among promising synthesis techniques, both laser ablation and plasma discharges are considered. These methods provide numerous advantages that are unique in several cases. On one hand, the main advantage of the laser ablation method is in the possibilities of changing laser parameters and background conditions and in its capacity to preserve stoichiometry. Laser-based methods also yield bio-compatible nanoparticles and nano-colloids with unique chemical properties. Laser-induced fragmentation provides additional control ways over nanoparticle sizes. To better understand and to optimize these processes, detailed numerical modeling is performed. The involved stages are considered and analyzed. The resulting nanoparticle parameters are investigated as a function of the experimental conditions. Nanoparticle properties, such as mean size and mean concentration are analyzed. Differences and similarities between the considered synthesis methods are discussed.
Anomalous Annealing Behavior of Arsenic Implanted Silicon as a Function of Dose and Energy
Anomalous annealing behavior of damage in As implanted Si has been investigated by channeling effect measurements. Room temperature As implants with doses from 1014 to 2 × 1016cm-2 at energies ranging from 50 to 250 keV into Si were annealed over the range of 600°C to 1100°C. Anneal temperatures ≥ 950°C reduce the disorder for ion doses of 0.5 to 1 × 1016 cm-2 at energies between 50 and 250 keV. Anomalously high residual disorder was found for the intermediate doses of 2 × 1014 to 2 × 10/cm2 implanted above 100 keV. For this intermediate dose, annealing of implants performed at liquid nitrogen temperatures did not show significant reduction in this damage. However implants at 200° to 300°C indicate a lower amount of damage compared to the room temperature implants.