Narrow line-width 1.3-μm wavelength tunable InAs/InGaAs quantum dot based bench-top light source using sandwiched sub-nano separator growth technique
Using sandwiched sub-nano separator technique, we successfully developed a narrow linewidth broadband 1.3-μm wavelength tunable quantum dot based bench-top light source, which can be useful for coherent photonic transport in O-band.
High-speed and temperature-insensitive operation in 1.3-µm InAs/GaAs high-density quantum dot lasers
Temperature-insensitive 10.3-Gb/s operation under fixed driving condition was demonstrated using directly-modulated InAs/GaAs high-density quantum dot lasers, maintaining an Ethernet mask margin of 48 % up to 100 °C. 20-Gb/s direct modulation has also been demonstrated.
Control of photoluminescence wavelength from uniform InAs quantum dots by annealing
Post-growth annealing of uniform InAs quantum dots (QDs) grown on GaAs(0 0 1) substrates was investigated, and obtained results gave some useful information about control of QD energy level and an intermixing effect between In and Ga atoms. In particular, a wide control of photoluminescence (PL) peak energy (312 meV) and an extremely narrow PL linewidth (13 meV) were obtained from uniform QDs annealed at 700 °C. Photoluminescence properties of annealed QDs depending on anneal conditions were explained by modification of the QD structure and, an interdiffussion effect was discussed.