Automated construction of detector models for efficiency interpolation in gamma-ray spectrometry.
A method was developed for automated construction of detector models in gamma-ray spectrometry, which can be used in Monte Carlo calculations of efficiency calibration curves. Full-energy peak efficiencies were first measured for different gamma-ray energies and for a given sample-detector arrangement and then calculated by the Monte Carlo method. For these calculations a detector model was employed along with a computer algorithm, which seeks agreement between the experimental efficiencies and the calculated ones by automatically determining the parameters of the model. The resulting agreement of the calculated data with the experimental one was within the relative uncertainty of the latter (3-4%) and the parameters of the detector models obtained were close to the values specified by the manufacturers. The detector models thus constructed can then be used for interpolation of calibration curves.
Application of GEANT4 simulation on calibration of HPGe detectors for cylindrical environmental samples
The determination of radionuclide activity concentration requires a prior knowledge of the full-energy peak (FEP) efficiency at all photon energies for a given measuring geometry. This problem has been partially solved by using procedures based on Monte Carlo simulations, developed in order to complement the experimental calibration procedures used in gamma-ray measurements of environmental samples. The aim of this article is to apply GEANT4 simulation for calibration of two HPGe detectors, for measurement of liquid and soil-like samples in cylindrical geometry. The efficiencies obtained using a simulation were compared with experimental results, and applied to a realistic measurement. Measurement uncertainties for both simulation and experimental values were estimated in order to see whether the results of the realistic measurement fall within acceptable limits. The trueness of the result was checked using the known activity of the measured samples provided by IAEA.
Anomalous Annealing Behavior of Arsenic Implanted Silicon as a Function of Dose and Energy
Anomalous annealing behavior of damage in As implanted Si has been investigated by channeling effect measurements. Room temperature As implants with doses from 1014 to 2 × 1016cm-2 at energies ranging from 50 to 250 keV into Si were annealed over the range of 600°C to 1100°C. Anneal temperatures ≥ 950°C reduce the disorder for ion doses of 0.5 to 1 × 1016 cm-2 at energies between 50 and 250 keV. Anomalously high residual disorder was found for the intermediate doses of 2 × 1014 to 2 × 10/cm2 implanted above 100 keV. For this intermediate dose, annealing of implants performed at liquid nitrogen temperatures did not show significant reduction in this damage. However implants at 200° to 300°C indicate a lower amount of damage compared to the room temperature implants.