Optimization of image synthesis for complex geometry objects in the robotic ultrasonic system
This paper is devoted to the optimization of image synthesis for complex shape objects in the robotic system of ultrasonic testing. The basis of this process is a preliminary analysis of the object with complex geometry to ensure reproducibility and accuracy of the tests in the specified range. It includes such stages as digital model creation, geometric surface analysis, creating of control points and vectors, searching for optimal model location, model verification on reachability, collisions and singularity.
INDUSTRIAL APPLICATION OF REAL-TIME 3 D IMAGING BY SAMPLING PHASED ARRAY
The “Sampling Phased Array” technique compared with the conventional phased array approach became very popular in the last years making use of the propagation of elementary waves (Huygens principle) generated by individual elements of the sensor array to reconstruct the composite phased array signal by high-speed numerical computation for any arbitrary, individual angle or physically possible focus depth. As the near field of each individual transducer in the array is that of a ‘quasi’ point source, transducer-near inspection regions are much better to inspect than in the conventional case where the near field is determined by the full aperture of the transducer array. Furthermore, the special IZFP-approach allows a very fast 3-dimensional visualization of inspection objects by combining slice by slice 2dimensionally calculated SAFT-B-images to a 3-dimensional data-cube with a manifold of possible data projections for evaluation and analysis of the inspection results. 3-D-SAFT algorithms taking into account also a modified transducer design with a wide-angular sound beam characteristic in each space direction are under development.
Anomalous Annealing Behavior of Arsenic Implanted Silicon as a Function of Dose and Energy
Anomalous annealing behavior of damage in As implanted Si has been investigated by channeling effect measurements. Room temperature As implants with doses from 1014 to 2 × 1016cm-2 at energies ranging from 50 to 250 keV into Si were annealed over the range of 600°C to 1100°C. Anneal temperatures ≥ 950°C reduce the disorder for ion doses of 0.5 to 1 × 1016 cm-2 at energies between 50 and 250 keV. Anomalously high residual disorder was found for the intermediate doses of 2 × 1014 to 2 × 10/cm2 implanted above 100 keV. For this intermediate dose, annealing of implants performed at liquid nitrogen temperatures did not show significant reduction in this damage. However implants at 200° to 300°C indicate a lower amount of damage compared to the room temperature implants.