Conformal thin film packaging for sic sensor circuits in harsh environments
In this investigation sputtered silicon carbide annealed at 300°C for one hour is used as a conformal thin film package. A RF magnetron sputterer was used to deposit 500 nm silicon carbide films on gold metal structures on alumina wafers. To determine the reliability and resistance to immersion in harsh environments, samples were submerged in gold etchant for 24 hours, in BOE for 24 hours, and in an O2 plasma etch for one hour. The adhesion strength of the thin film was measured by a pull test before and after the chemical immersion, which indicated that the film has an adhesion strength better than 108 N/m2; this is similar to the adhesion of the gold layer to the alumina wafer. MIM capacitors are used to determine the dielectric constant, which is dependent on the SiC anneal temperature. Finally, to demonstrate that the SiC, conformal, thin film may be used to package RF circuits and sensors, an LC resonator circuit was fabricated and tested with and without the conformal SiC thin film packaging. The results indicate that the SiC coating adds no appreciable degradation to the circuits RF performance.
A Si micromachined conformal package for a K-band low noise HEMT amplifier
A 20 GHz low noise HEMT amplifier is fabricated and tested to demonstrate the application of integrated conformal packaging to MMIC circuit design. Si micromachining is employed to create a conformal shielding cavity for the low noise amplifier, which uses a flip chip InP HEMT. The packaged amplifier demonstrates 5 dB insertion gain at 20 GHz, with performance that closely matches simulations of an ideal line circuit. The results show that Si micromachining can be performed to integrate packaging with circuit design, and that MMICs can be fabricated on Si substrates by using discrete flip-chip devices.
Refinement of crystal structure parameters using convergent‐beam electron diffraction: the low‐temperature phase of SrTiO3
The method to refine crystal structure parameters (atom positions and Debye–Waller factors) using convergent-beam electron diffraction (CBED), which is applicable to crystal structure analysis of a small specimen area down to a few nm in diameter, is studied. The line profiles of higher-order Laue-zone reflections are recorded using imaging plates. Theoretical intensities are calculated based on the dynamical theory of electron diffraction with the aid of the generalized Bethe approximation to shorten calculation time. The structural parameters are determined by fitting the experimental profiles with the theoretical ones using a nonlinear least-squares method. The present method has been applied to the low-temperature phase of SrTiO3. The structural parameter or the rotation angle of the oxygen octahedron has been determined to be \varphi = 1.12 (4)°, which shows good agreement with that obtained from electron spin resonance experiments.