Crystal defects analysis using nano-probe technologies
With the device size shrinking to deep sub-micron region, silicon crystal defects become critical to device parameters. It also brings FA (Failure Analysis) great challenges on timely and exactly identifying the defect by EFA (Electrical Failure Analysis) and PFA (Physical Failure Analysis) methods. In this paper, we report the FA's on the single bit failure of a 6T-SRAM using nano-probe technologies for electrical localization. PFA methods, such as SEM (Scanning Electron Microscope), TEM (Transmission Electron Microscope), and chemical etching were performed for failure visualization.
Study on SRAM soft failure using planar-view transmission electron microscopy techniques
Soft failure in static random access memory (SRAM), where there are several mechanisms related to it, is a kind of major obstruction to improve the yield. Transmission electron microscopy (TEM) is a powerful failure analysis tool, which has a high spatial resolution and is widely used in IC failure analysis with the shrinkage of integrated circuit to a nano-level transistor. Planar-view TEM techniques have great advantages in finding failure location and mechanism. In this paper, two kinds of soft failure root causes are identified by the planar-view TEM techniques.
An introduction to human geography : the cultural landscape
1. Thinking Geographically 2. Population 3. Migration 4. Folk and Popular Culture 5. Language 6. Religion 7. Ethnicity 8. Political Geography 9. Development 10. Agriculture 11. Industry 12. Services 13. Urban Patterns 14. Resource Issues Conclusion