Fabrication Of A-C:B/N-Si Solar Cells With Low Positive Bias By Custom-Made-CVD
Boron doped amorphous carbon (a-C:B) film fabricated on n-type silicon using waste palm oil precursor by low positive bias voltage is presented. The rectifying curve were found for all samples under dark measurement revealed that those samples were p-type semiconductor. The +30 V was found the optimized of the electronic properties with the open circuit voltage (VOC), current density (JSC), fill factor (FF) and efficiency (%) were approximately 0.259034 V, 1.299456 mA/cm 2 , 0.240011, and 0.080788 %, respectively. The conversion efficiency of a-C:B has been improved under the influenced of low positive bias.
A photovoltaic cell from p-type boron-doped amorphous carbon film
Abstract Boron-doped amorphous carbon (a-C(B)) films were prepared on n-type silicon using pulsed laser deposition technique of a graphite target. The a-C(B) films have been proved to be p-type by the formation of a heterojunction between the a-C(B) film and n-Si. The device of a-C(B)/n-Si structure yielded an open-circuit voltage ( V oc ) of 0.27 V and a short-circuit current density ( J sc ) of 2.2 mA/cm 2 under illumination (AM1.5 100 mW/cm 2 ). According to calculation, the energy conversion efficiency and fill factor were found to be about 0.3% and 0.53, respectively.
Optical and structural properties of amorphous carbon thin films deposited by microwave surface-wave plasma CVD
Nitrogen doped amorphous carbon (a-C:N) thin films were deposited on silicon and quartz substrates by microwave surface-wave plasma chemical vapor deposition technique at low temperature (<100 °C). We used argon (Ar), camphor dissolved in alcohol and nitrogen (N) as carrier, source and dopant gases, respectively. Optical band gap (Eg) decreased from 4.1 to 2.4 eV when the N gas concentration increased from 0 to 4.5%. The films were annealed at different temperatures ranging from 150 to 450 °C in Ar gas environment to investigate the optical and electrical properties of the films before and after annealing. Both Eg and electrical resistivity (p) decreased dramatically to 0.95 eV and 5.7 x 10 4 (Ω-cm) at 450 °C annealing. The structural modifications of the films leading to more graphite as a function of the annealing temperature was confirmed by the characterization of Raman spectra.