Metal Gate Recessed Access Device (RAD) for DRAM Scaling
A functional DRAM with higher data retention characteristics than a planar access device has been demonstrated, using a metal gate recessed access device (RAD). Chemical vapor deposition (CVD) and atomic layer deposition (ALD) were used to deposit titanium nitride (TiN) and tantalum nitride (TaN), respectively. CVD TiN and ALD TaN-CVD TiN laminate gate stacks were integrated with a RAD module. ALD TaN-CVD TiN laminate gates showed enhanced drive current (IDS), higher transconductance (GM), higher mobility (¿EFF) and reduced off current (IOFF) characteristics compared to CVD TiN gates. Device characteristics and reliability data for both the planar devices and RADs are presented. The ALD TaN-CVD TiN laminate metal gate RAD showed much improved data retention characteristics compared to a conventional planar device with a poly silicon gate. The optimum thickness of ALD TaN in the laminate stack is discussed.
Roles of Residual Stress in Dynamic Refresh Failure of a Buried-Recessed-Channel-Array Transistor (B-CAT) in DRAM
We clarify the role of metal gates (e.g., TiN) on the degradation of the state-of-the-art buried-channel-array transistor (B-CAT) in dynamic random access memory (DRAM) chips. Unless the thermal budget during the processing step for integration is well controlled, residual stress caused by grain growth of the metal gate can result in a dynamic refresh failure of B-CAT through the negative shift in threshold voltage (-ΔVth). A hole trapping model is proposed to explain this phenomenon. Uncontrolled grain growth of the metal gate increases the residual stress level on SiO2, and, consequently, it breaks the strained Si-O-Si bonds, which can serve as precursor sites for incoming holes. Residual stress in the three-dimensional transistor architecture, therefore, must be well controlled to improve the reliability of commercial DRAM chips.
Ocean thermal energy conversion: The promise of a clean future
Due to the world's heavy dependence on fossil fuels for electricity, pollution and global warming is on the rise. However, numerous countries are still relying on diesel generators as their main source of energy. There is a lack of practical alternative energy source that can meet the global energy demand without posing any threat to the natural environment. Ocean Thermal Energy Conversion (OTEC) is a concept that has the potential to address this growing issue. It is basically a mechanism that exploits the temperature difference between warm surface seawater and cold deep ocean water, to produce electricity. Although OTEC has a low energy density, the thermal energy in the ocean is vastly abundant. OTEC development has been dormant for a long time since it was first proposed in 1881. However, it has now regained recognition worldwide as a realistic solution to our world energy issue. Instead of having a great potential for power generation, it also carries the ability to produce high value products from the large volume of Deep Sea Water (DSW) that can be released as byproducts of OTEC plant operation. These products can hold a very profitable place in industries such as pharmaceutical, food, cosmetics and mineral water production. Further research on ocean current and DSW properties can someday lead to the commercial used of OTEC. This paper is a review of the basic concept, present status and future prospects of OTEC around the world.