Analyzing of heating elements' location of distributed control objects
At the present stage of development of automatic control systems the issue of maintaining of a given temperature regime appears. The authors have developed a method of synthesis of nonlinear regulators to stabilize a control object temperature field (published by Ilyushin, Y., Pervukhin, D., Afanasieva, O., Klavdiev, A., & Kolesnichenko, S. (2014). The Methods of the Synthesis of the Nonlinear Regulators for the Distributed One-Dimension Control Objects. Modern Applied Science, 9(2), 42–61. http://dx.doi.org/10.5539/mas.v9n2p42). The resulting controller allows creating an adaptive regulated system to maintain a temperature field - to do that, it is necessary to analyze a control system in order to find an optimal number of heating elements to stabilize a temperature field. In this there have been article obtained functions for calculating an optimal number of heating elements of silicon-carbide heaters, used for a temperature treatment of various kinds of products (bread baking, metal hardening, etc.). The article describes a method to calculate the number of heating elements of n-dimensional control objects. A check of an adequacy of a mathematical model, obtained within a synthesis process is provided as well. Obtained hodographs of the system demonstrate a stability of running processes and therefore an adequacy of results.
Monitoring system for the demand of specialists in the sphere of subsurface management
The article shows a solution of the problem of employment of graduates by creating a geographic information system for monitoring of the available vacancies. The authors present a program for working with the Panorama cartographic system, in which was developed a geographic information system containing information on the current vacancies of the city of Kislovodsk.
Bevel RIE application to reduce defectivity in copper BEOL processing
Bevel etch used during wafer fabrication for semiconductor devices is discussed. In this case, the bevel etch process was utilized in middle of the line processing (MOL) to reduce back end of line (BEOL) defectivity. Tungsten and titanium nitride films, from the formation of contacts to the transistors, extend into the bevel region of the wafer and have been shown to initiate arcing. This can spread foreign material defects on the front side of the wafer in various BEOL post processing steps including subsequent reactive ion etching, SEM metrology and film depositions. The bevel etch tool confines a plasma etch to the outer edge of the front side of the wafer (which can be individually adjusted) and can remove dielectric, organic and Ti/TiN/W films using a fluorine based chemistry.