Flow injection determination of iodide ion in a photographic developing solution using iodide ion-selective electrode detector.
A potentiometric flow injection determination method for iodide ion in a photographic developing solution was proposed by utilizing a flow-through type iodide ion-selective electrode detector. The sensing membrane of the electrode was Ag(2)S-AgI membrane. The response of the electrode detector as a peak-shape signal was obtained for injected iodide ion in a photographic developing solution. A linear relationship in the subnernstian zone was found to exist between peak height and the concentration of the iodide ion in a photographic developing solution in a concentration range from 0 to 6.0x10(-5) mol l(-1). The relative standard deviation for ten injections of 2x10(-5) mol l(-1) iodide ion in a photographic developing solution was 0.96% and the sampling rate was approximately 12-13 samples h(-1). The iodide ion could be determined under coexisting of an organic reducing reagent and inorganic electrolytes of high concentration in a photographic developing solution sample solution by the present method.
Flow injection analysis of nonionic surfactants with plasticized poly(vinyl chloride) membrane electrode detector
イオン性界面活性剤に応答する可塑化ポリ塩化ビニル膜を感応膜とする電極を非イオン性界面活性剤のフローインジェクション分析の電位検出に用いた.電極は金属イオンと非イオン性界面活性剤との錯陽イオンに対して応答する.この電極はトリトンX-100に対して約10-3Mから約10-1Mの濃度範囲で直線的な電位変化を示す.応答の傾きは45mV/decadeである.トリトンX-100に対する検出下限濃度は,電極検出器の電位を安定化させるための溶液(ベースライン支持電解質溶液)中に含有させたドデシル硫酸イオンの濃度の増加と共に向上した.トリトンX-100以外の数種の非イオン性界面活性剤に対する応答性もトリトンX-100に対するものと類似している.10-2M以下の電解質の共存は過塩素酸イオンを除いて,非イオン性界面活性剤の定量を妨害しない.しかしイオン性界面活性剤は非イオン性界面活性剤の定量を著しく妨害する.
Physical Processes in Inorganic Scintillators
BASIC PRINCIPLES AND PROCESSES Physical Mechanism of Scintillation Creation of Electron Hole Pairs Excitation and Emission of Luminescence Centers Scintillation Materials Halides Oxides and Oxide Systems Chalcogenides Glasses Interaction of Ionizing Radiation with Scintillators High Energy Photons Charged Particles Neutral Particles General Characteristics of Inorganic Scintillators Light Yield Duration of Scintillation Pulse Afterglow Temperature Response Optical Properties Radiation Hardness Density Emission Spectra Mechanical and Chemical Properties Physical Parameters Cost Consideration Scintillator Requirements in Various Applications High Energy Physics Intermediate Energy Physics Positron Emission Tomography Gamma Spectroscopy Energy Resolution Intrinsic Scintillator Resolution Nonproportional Response Time Resolution Low Energy Quanta and Electrons CONVERSION OF ELECTRONIC EXCITATIONS IN SOLIDS Charge Carrier Behaviors Delta Rays Secondaries Excitation of Luminescence Centers Effect of Ionization Density Energy Losses Simple Phenomenological Model Plasmon Model Polaron Model Scintillation Yield Spectra Vacuum Ultraviolet Region Ultrasoft X-Rays X-Rays Gamma Rays Heavy Ionizing Particles INTRINSIC LUMINESCENCE OF INORGANIC SCINTILLATORS Excitonic Luminescence Alkali Halide Crystals Alkaline-Earth Fluorides Ternary Halide Compounds Excitonic-Like Luminescence Cesium Iodide Tungstate and Molybdate Phosphors Core-to-Valence Transitions First Evidence for Radiative Core-to-Valence Transitions Excitation Spectra Emission Spectra Experiment Theory Luminescence Kinetics Experimental Theoretical Investigations Temperature Dependence of Luminescence Parameters Conditions of Detection Prospects for Research EXTRINSIC LUMINESCENCE OF INORGANIC SCINTILLATORS Thallium-Activated Halide Scintillators Crystals with NaCl-Type Structure Crystals with CsCl-Type Structure Other Thallium-Based and Thallium-Doped Crystals Crystals Containing Other ns2 Ions Bismuth Germanate (BGO) Sodium-Activated Cesium Iodide Rare-Earth-Activated Crystals General Considerations Europium-Activated Crystals Cerium-Activated Compounds Preliminary Comments LaF3-CeF3 Systems Cerium Chloride Barium Fluoride Gadolinium-Containing Crystals Lu- and Y-Containing Crystals Nd- and Pr-Activated Crystals DEFECT FORMATION BY IONIZING RADIATION Effect on Scintillator Characteristics Mechanisms of Defect Formation Efficiency of Defect Production Geometrical Factor Separation between F and H Centers Temperature Dependence of Production Efficiency Role of Halogen Ion Impurities Effect of Cation Impurities Formation Time of F-H Pairs Closing Comments References Index