Analysis of SAW propagation in gratings on ZnO/diamond substrates
The space harmonic method is used to analyze surface acoustic wave (SAW) propagation under an infinite periodic metal grating on ZnO/diamond composite layered substrates. Dispersion properties for shorted and open gratings are derived as a function of the thickness of the grating electrodes. From these dispersion relations, the coupling of modes (COM) parameters are derived. Energy profiles inside ZnO/diamond show that the energies contained in each of the ZnO and diamond layers are of the same order when the thickness of the ZnO layer is P//spl pi/r (P=grating period) and that the energy is contained within two wavelengths below the ZnO/diamond interface.
Surface Acoustic Wave Ammonia Sensors Based on ST-cut Quartz under Periodic Al Structure
Surface acoustic wave (SAW) devices are key components for sensing applications. SAW propagation under a periodic grating was investigated in this work. The theoretical method used here is the space harmonic method. We also applied the results of SAW propagation studied in this work to design a two-port resonator with an Al grating on ST-cut quartz. The measured frequency responses of the resonator were similar to the simulation ones. Then, the chemical interface of polyaniline/WO3 composites was coated on the SAW sensor for ammonia detection. The SAW sensor responded to ammonia gas and could be regenerated using dry nitrogen.
Anomalous Annealing Behavior of Arsenic Implanted Silicon as a Function of Dose and Energy
Anomalous annealing behavior of damage in As implanted Si has been investigated by channeling effect measurements. Room temperature As implants with doses from 1014 to 2 × 1016cm-2 at energies ranging from 50 to 250 keV into Si were annealed over the range of 600°C to 1100°C. Anneal temperatures ≥ 950°C reduce the disorder for ion doses of 0.5 to 1 × 1016 cm-2 at energies between 50 and 250 keV. Anomalously high residual disorder was found for the intermediate doses of 2 × 1014 to 2 × 10/cm2 implanted above 100 keV. For this intermediate dose, annealing of implants performed at liquid nitrogen temperatures did not show significant reduction in this damage. However implants at 200° to 300°C indicate a lower amount of damage compared to the room temperature implants.