The Universal Space Transponder: A next generation software defined radio
The Universal Space Transponder (UST) is a next generation transponder developed at the Jet Propulsion Laboratory to meet a large variety of telecom, navigation, and radio science needs for future deep-space and near-Earth missions. This paper details the UST software defined radio design and describes how the combination of a modular hardware architecture and in-flight reprogrammability enables a new level of flexibility and expandability for a space transponder. The UST uses common power and digital processing assemblies that can be integrated with a variety of RF modules and is capable of simultaneous, multiband operations with data rates up to 37.5 Mbps RX and 300 Mbps TX. This allows a single radio to support all the direct-to-Earth and relay communication requirements for even complex mission scenarios, reducing the total cost, mass, and power. The discussion includes a description of the current UST engineering models that have been built and tested, as well as details about the next generation capabilities supported by UST, including advanced link coding and modulation, radiometric techniques, and in-radio protocol handling. Details are also presented on RF modules and digital processing in development for radio science and astronomy purposes, including a bistatic radar receiver and broadband planetary emissions receiver. These will demonstrate the ability to integrate low-cost science instruments into the UST architecture, further expanding the versatility of the UST.
The Electra proximity link payload for Mars relay telecommunications and navigation
We present here the functional requirements, design characteristics, and implementational status of the Electra Payload and its role as a telecommunications mode in an evolving Mars orbital infrastructure.
Anomalous Annealing Behavior of Arsenic Implanted Silicon as a Function of Dose and Energy
Anomalous annealing behavior of damage in As implanted Si has been investigated by channeling effect measurements. Room temperature As implants with doses from 1014 to 2 × 1016cm-2 at energies ranging from 50 to 250 keV into Si were annealed over the range of 600°C to 1100°C. Anneal temperatures ≥ 950°C reduce the disorder for ion doses of 0.5 to 1 × 1016 cm-2 at energies between 50 and 250 keV. Anomalously high residual disorder was found for the intermediate doses of 2 × 1014 to 2 × 10/cm2 implanted above 100 keV. For this intermediate dose, annealing of implants performed at liquid nitrogen temperatures did not show significant reduction in this damage. However implants at 200° to 300°C indicate a lower amount of damage compared to the room temperature implants.