Pseudo-potential calculations of the electronic and optical properties of GaxAlyIn1–x–yAs
A method for calculating the electronic structure of the quaternary alloy GaAlInAs is presented with zinc blende structure. We have used the empirical pseudo-potential method coupled with the virtual crystal approximation (VCA). The electronic structures are studied for GaAlInAs (x = 0.24, y = 0.24) and GaAlInAs lattice matched to InP as well GaAs. In addition a method for calculating the refractive index is presented, which we used the Sellmeir model. The composition dependence of the refractive index is discussed, the results indicate that refractive index decrease with alloying composition of the quaternary alloy GaAlInAs lattice matched to InP and GaAs.
AlInGaAs 0.8-/spl mu/m high-power semiconductor lasers with delta-doped resonant tunneling quantum wells
In this paper, we describe a new structure design for producing low-threshold high-efficiency and high-brightness 0.807-/spl mu/m lasers. In this structure, we incorporate a self-discriminating weak optical confinement asymmetrical waveguide, and an active region based on single or double AlInGaAs quantum well (QW) with Te n-type /spl delta/-doping. Optimized coupling between the /spl delta/-doping layer and the double QW, along with waveguide and doping profile optimization, yields J/sub th/=140 A/cm/sup -2/ per QW, a far-field angle of /spl sim/24/spl deg/, and M/sup 2/ close to one.
Experimental evaluation of detuned loading effects on distortion in edge emitting DBR lasers
Detuned loading in directly modulated DBR lasers has been evaluated. IMD3 was measured, yielding a spurious free dynamic range of >103 dB/Hz/sup 2/3/ for frequencies 1-19 GHz with a top value of 116 dB/Hz/sup 2/3/ at 1 GHz.