Reducing contact resistance of high current connectors on electric vehicle by controlling contact pressure and addition of plating material
This paper studies on contact resistance on copper busbar connection relative to plating materials, plating thickness, and contact pressure. This study is important because busbar connection plays an important role on electric distribution performance. A good busbar connection would have low contact resistance, therefore low energy losses and better reliability. In this study, the sample are busbar connection without plating, busbar connection with zinc plating, busbar connection with nickel plating, and busbar connection with silver plating. First aspect that is going to be tested is contact resistance measurement without load on each. The next test is contact resistance measurement with DC load of 9, 18, and 27 A. Each test is conducted with the contact pressure variation of 5.6, 7.0, dan 8.4 MPa, and with plating thickness of 5, 15, and 25 μm. The result shows that busbar connection with 5 μm silver plating have much lower contact resistance compared to all the other configuration.
Comparison of Tab-To-Busbar Ultrasonic Joints for Electric Vehicle Li-Ion Battery Applications
Recent uptake in the use of lithium-ion battery packs within electric vehicles has drawn significant attention to the selection of busbar material and corresponding thickness, which are usually based on mechanical, electrical and thermal characteristics of the welded joints, material availability and cost. To determine joint behaviour corresponding to critical-to-quality criteria, this study uses one of the widely used joining technologies, ultrasonic metal welding (UMW), to produce tab-to-busbar joints using copper and aluminium busbars of varying thicknesses. Joints for electrical and thermal characterisation were selected based on the satisfactory mechanical strength determined from the T-peel tests. Electrical contact resistance and corresponding temperature rise at the joints were compared for different tab-to-busbar joints by passing current through the joints. The average resistance or temperature increase from the 0.3 mm Al tab was 0.6 times higher than the 0.3 mm Cu[Ni] tab, irrespective of busbar selection.
Fully Integrated Bidirectional CMOS-MEMS Flow Sensor With Low Power Pulse Operation
Leveraging More-than-Moore technology, we demonstrate an integrated CMOS MEMS flow sensor via a very compact system on chip (SoC) that can sense the bidirectional N2 gas flow. Our SoC features a very low-noise instrumentation amplifier that is implemented on a CMOS wafer and serves as a readout integrated circuit for a thermoresistive micro-calorimetric flow sensor which is fabricated on a MEMS wafer. A compact heterogeneous integration is achieved by combining the two wafers via the proprietary InvenSense AlN process. The measured sensitivity of our CMOS MEMS flow sensor is 98 mV/sccm which is three times better than the state-of-the-art counterpart. The flow range measured by our SoC is from −26 to 26 m/s (from −50 to 50 sccm). Moreover, the pulsed heater operation makes this proposed SoC flow sensor a very low power (<9 mW) and, thus, a promising candidate for the Internet-of-Things applications in smart home/green buildings.