Characterization of Ion Implanted Silicon Annealed with a Graphite Radiation Source
A Varian IA-200 isothermal annealer has been used to anneal ion implantation damage and electrically activate dopants in As and B implanted silicon with minimal redistribution of the impurity. The anneal occurs in vacuum using infrared radiation from a resistively heated sheet of graphite. Good quality anneals of /sup 11/B implanted samples have been obtained with minimal boron diffusion. Arsenic implanted wafers have also be annealed with excellent results except for a substantial loss of As which occurs unless the wafer has an SiO/sub 2/ cap. The anneal quality of (100) wafers was independent of dose, however, the anneal quality of the (111) wafers improved with increasing As dose.
Activation of shallow, high‐dose BF+2 implants into silicon by rapid thermal processing
Rapid thermal processing has been used to activate shallow p+ layers (∼0.1–0.15 μm) following BF+2 implantation (49 keV, 2–6×1015 cm−2) into amorphized silicon. For doses of 2×1015 cm−2, the shallow as‐implanted boron profile was preserved, unlike the case of furnace annealing (900 °C, 30 min). Sheet resistance of 85 Ω/sq following rapid annealing was close to that calculated assuming 100% activation of dopants in their as‐implanted distribution. At 6×1015 cm−2 dose, however, these same rapid annealing conditions (10–15 sec exposure to a 1250 °C heater) produce considerable dopant redistribution (≳2000 A) with peak carrier concentration of ∼1020 cc−1, which is far below the as‐implanted value of ∼1021 cc−1. A two‐step anneal is described which permits shallow junctions of ∼1500 A to be obtained for the 6×1015 cm−2 dose implants; however, maximum carrier concentration was still ≲1020 cc−1. The present data suggests that the concentration limit for activation of implanted boron encountered when furnace anne...
SR topography of plastically deformed Fe-Si bicrystals - observation in situ and post mortem
SR reflection topography was applied to study the interaction of slip dislocations with the grain boundaries in Fe-4at%Si bicrystals deformed by compression. Three experimental settings with either a white or monochromatic beam were used and the corresponding orientation contrast analysed. Dislocation transmission through the grain boundary was observed in bicrystals with favourable geometry of the slip systems.