Research on virtual manufacturing models of a new type of taper ball-end milling cutter
Based on the analysis of the difficulties in design and manufacturing and cutting edge curves of many kinds of revolving milling cutters, a design method is presented in this paper for a new type of cutting-edge. The general differential equation is given so that the cutting-edge, the three-grooves and the grinding wheel to grind can be satisfied. The actual grooves and cutting-edges of virtual manufacturing are presented. The general feeding speeds of grinding wheel used in 2-axis NC machining of the cutter were deduced. The virtual simulation of the taper ball-end cutter is carried out. It has been proved that the traditional problems in designing and manufacturing are solved successfully in this way, simultaneously the process is much simple for it can be formed only in one time elementarily.
New design of the cutting edge on the arc revolving cutters with toroidal shape
Based on the discussion of the problems of cutting edge designing for normal revolving cutters in 2 -axis processing, a general formula for designing a new model of cutting edge is presented. The relevant curve equation for continuous cutting edge is also presented in terms of the arc revolving cutters with toroidal shape. Finally, the direction of follow up research is clarified.
Photoreflectance characterization of vanadium-doped GaAs layers grown by metalorganic vapor phase epitaxy
Abstract We characterized the vanadium-doped (GaAs:V) layers grown on GaAs substrate by metalorganic vapor phase epitaxy. The conductivity of the samples is checked by the Hall effect measurements, and it is n type with electrons concentration ranging from 2×10 13 to 2×10 17  cm −3 . We used the photoreflectance technique (PR) to study the effect of vanadium doping on the optical properties of GaAs. Our experimental results show that the built-in electric field F and the broadening parameter Γ 0 increase with V-doping concentration. Furthermore, the temperature dependence of the built-in electric field and the broadening parameter of GaAs:V samples have been investigated by PR. It has been observed that these parameters increase with increasing temperature. The decrease of the built-in electric field with decreasing temperature is due to the photovoltage effect.We characterized the vanadium-doped GaAs (GaAs:V) layers grown on GaAs substrate by metalorganic vapor phase epitaxy.