25.8Gbps Direct Modulation AlGaInAs DFB lasers with Ru-doped InP Buried Heterostructure for 70°C operation
25.8Gbps Direct Modulation AlGaInAs DFB lasers with Ru-doped InP Buried Heterostructure were fabricated for the first time. The lasers achieved high output power and clear eye opening at 70°C and are promising for uncooled operation.
100°C 10 Gbit/s directly modulated InGaAsP DFB lasers with Ru-doped semi-insulating buried heterostructure
A directly modulated 1.3 /spl mu/m InGaAsP DFB laser with a simple buried structure using Ru-doped semi-insulating InP is presented. The high relaxation oscillation frequency of 10 GHz was obtained at 95/spl deg/C. Clear eye openings under 10 Gbit/s direct modulation were achieved from 0 to 100/spl deg/C.
Photoreflectance characterization of vanadium-doped GaAs layers grown by metalorganic vapor phase epitaxy
Abstract We characterized the vanadium-doped (GaAs:V) layers grown on GaAs substrate by metalorganic vapor phase epitaxy. The conductivity of the samples is checked by the Hall effect measurements, and it is n type with electrons concentration ranging from 2×10 13 to 2×10 17  cm −3 . We used the photoreflectance technique (PR) to study the effect of vanadium doping on the optical properties of GaAs. Our experimental results show that the built-in electric field F and the broadening parameter Γ 0 increase with V-doping concentration. Furthermore, the temperature dependence of the built-in electric field and the broadening parameter of GaAs:V samples have been investigated by PR. It has been observed that these parameters increase with increasing temperature. The decrease of the built-in electric field with decreasing temperature is due to the photovoltage effect.We characterized the vanadium-doped GaAs (GaAs:V) layers grown on GaAs substrate by metalorganic vapor phase epitaxy.