Structure-Designable Formation-Method of Super Low-k SiOC Film (k=2.2) by Neutral-Beam-Enhanced-CVD
Ar neutral beam enhanced chemical vapor deposition can control the dielectric constant and film modulus of low-k SiOC deposited on Si substrates precisely because it avoids precursor dissociation due to electron collisions and UV photons in plasma. Optimizing the ratio between Si-O and Si-(CH3)x as well as the proportions of linear, network, and cage Si-O structures by changing the precursor, we obtained a k of 2.2 and a reasonable modulus by using either dimethyl diethoxy silane or dimethyl dimethoxy silane as a precursor.
Low dielectric constant insulator formed by downstream plasma CVD at room temperature using TMS/O2
We present an insulator with a dielectric constant lower than 3.0, thermal stability up to 500° C and good gap-filling characteristics. This insulator was formed by downstream plasma chemical vapor deposition (CVD) at room temperature using tetra-methylsilane (TMS)/O2 gases. It contained a large amount of water in the as-deposited state. Annealing at 350° C resulted in a decrease in the water content of the insulator, and the insulator did not absorb water after the annealing. The film is constructed from Si–O and Si–CH3 bonds, which produce a low dielectric constant and high thermal stability.
Energy
Energy is often defined as the ability to do work. There are many forms of energy. A few examples include; Gravitational energy, Kinetic energy (energy of motion), Thermal energy (heat energy), Potential energy. Potential energy is the energy something has based on its position in the universe. A stretched elastic band has potential energy. A rock held up in the air has potential energy based on its position.