Strategies for Manufacturing Ultra Low ESR Ta Capacitors
Leading edge designs for portable electronic devices require capacitors which deliver volumetric efficiency, high reliability, low cost, reduced propensity for ignition, and low Equivalent Series Resistance (ESR). Tantalum capacitors employing a conductive polymer cathode are uniquely capable of providing all of these critical characteristics. Tantalum capacitors have a long track record for unsurpassed volumetric efficiency and reliability. The introduction of conductive polymer cathodes enabled dramatic reductions in ESR and greatly increased resistance to ignition. The lower ESR and enhanced cap retention at high frequency of the conductive polymer construction enabled circuit designers to reduce the number of capacitors required to achieve design solutions, resulting in reduced cost. Although Multiple Anode Tantalum (MAT) designs are capable of achieving the lowest ESR possible with valve metal capacitors (< 6 milliohms), single anode Ta/polymer capacitors with ESR less than 9 milliohms are now. Single anode capacitors with ESR levels less than 7 milliohms are within reach. The ability to achieve ultra low ESR levels with single anode designs provides the lowest cost, high performance solution to many design requirements. This paper describes the strategy used by manufacturers to provide solid state capacitors with ever decreasing ESR levels.
Performance and Reliability of Solid Tantalum Capacitors at Cryogenic Conditions
Performance of different types of solid tantalum capacitors was evaluated at room and low temperatures, down to 15 K. The effect of temperature on frequency dependencies of capacitance, effective series resistances (ESR), leakage currents, and breakdown voltages has been investigated and analyzed. To assess thermo-mechanical robustness of the parts, several groups of loose capacitors and those soldered on FR4 boards were subjected to multiple (up to 500) temperature cycles between room temperature and 77 K. Experiments and mathematical modeling have shown that degradation in tantalum capacitors at low temperatures is mostly due to increasing resistance of the manganese cathode layer, resulting in substantial decrease of the roll-off frequency. Absorption currents follow a power law, I approximately t(sup -m), with the exponent m varying from 0.8 to 1.1. These currents do not change significantly at cryogenic conditions and the value of the exponent remains the same down to 15 K. Variations of leakage currents with voltage can be described by Pool-Frenkel and Schottky mechanisms of conductivity, with the Schottky mechanism prevailing at cryogenic conditions. Breakdown voltages of tantalum capacitors increase and the probability of scintillations decreases at cryogenic temperatures. However, breakdown voltages measured during surge current testing decrease at liquid nitrogen (LN) compared to room-temperature conditions. Results of temperature cycling suggest that tantalum capacitors are capable of withstanding multiple exposures to cryogenic conditions, but the probability of failures varies for different part types.
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