Aluminum-free strained-layer lasers emitting at 1.14 μm on low-composition InGaAs:n substrates by metalorganic chemical vapor deposition
Broad-area (W=150 /spl mu/m) single-quantum-well (SQW) lasers have been successfully fabricated on n-type In/sub 0.03/Ga/sub 0.97/As substrates without incorporating aluminum-containing alloys. The strained-layer InGaP-GaAs-InGaAs heterostructure was grown by atmospheric pressure metalorganic chemical vapor deposition. Due to both the increased substrate lattice constant and the partial strain compensation supplied by the tensile-strained GaAs optical guiding layers, a peak emission wavelength of 1.1403 /spl mu/m is obtained for a 1-mm cavity length.
Preliminary results for GaInAs channel MISFETs fabricated on LEC-grown ternary GaInAs substrates
We report the first demonstration of GaInAs channel functional heterostructure field-effect transistors grown on Cr-doped LEC Ga/sub 1-x/In/sub x/As ternary substrates. The devices feature Schottky gates with high reverse breakdown voltages and a forward ideality factor of n/spl sim/1.2-1.3, good channel modulation and a complete pinch-off. The drain I-V curves display some non-idealities associated with compositional non-uniformities in the substrates. Strained channel devices with a 15% Indium composition in the active layer are also demonstrated on ternary substrates. It is expected that continued progress in GaInAs ternary substrate development will permit the fabrication of high-performance transistors relying on an Indium rich channel.
Growth of ternary InxGa1−xAs bulk crystals with a uniform composition through supply of GaAs
Ternary In0.14Ga0.86As bulk crystals with a uniform composition were found to be grown at a constant temperature by continuously supplying the depleted solute elements of Ga and As to the growth melt. The pseudo-binary InAs-GaAs melts were used as the growth melts. Compositionally graded 〈111B〉 InxGa1−xAs (0.05 ≤ x ≤ 0.08) crystals were used as seed crystals. The liquid encapsulated Czochralski (LEC) technique with a method of supplying GaAs source material was used to grow the ternary bulk crystals. Polycrystalline GaAs was used as a source material. A 4 mm thick and uniform In0.14Ga0.86As single crystal was obtained.