Ion Effects in the DARHT-II Downstream Transport
The DARHT-II accelerator produces an 18-MeV, 2-kA, 2-μs electron beam pulse. After the accelerator, the pulse is delivered to the final focus on an x-ray producing target via a beam transport section called the Downstream Transport. Ions produced due to beam ionization of residual gases in the Downstream Transport can affect the beam dynamics. Ions generated by the head of the pulse will cause modification of space-charge forces at the tail of the pulse so that the beam head and tail will have different beam envelopes. They may also induce ion-hose instability at the tail of the pulse. If these effects are significant, the focusing requirements of beam head and tail at the final focus will become very different. The focusing of the complete beam pulse will be time dependent and difficult to achieve, leading to less efficient x-ray production. In this paper, we will describe the results of our calculations of these ion effects at different residual-gas pressure levels. Our goal is to determine the maximum residual-gas pressure allowable in DARHT-II Downstream Transport such that the required final beam focus is achievable over the entire beam pulse under these deleterious ion effects.
Simulations of Ion-Hose Instability with Pressure Profiles For DARHT-II Long-Pulse Experiments
Ion-hose instability growth of the 2-mus electron beam pulses will be studied during the Phase-II commissioning of the DARHT-II Facility. We have done simulations in support of the experiment using pressure profiles estimated for different pumping arrangements along the accelerator. Results of these simulations are reported in this paper and compared to simulation results reported previously using constant pressure profile along the accelerator. Good agreement is found.
Third order nonlinear distortion of SAW duplexers in UMTS system
Nonlinearity distortion characterization and accurate modeling techniques for leaky surface acoustic wave (LSAW) devices have been desired in the recently years due to the applications of the Radio Frequency (RF) SAW duplexers in the third-generation (3G) telecommunication system, such as Universal Mobile Telecommunications System (UMTS). In the work, we first discuss the approaches to measure and characterize the 3rd order harmonic generation of the resonators on lithium tantalate YXl42° wafer and YXl48° wafer, with resonance frequency of 800MHz to 900 MHz; Second, we present an effective nonlinear Butterworth-van-Dyke (BVD) model to simulate the multi-tone 3rd order intermodulation effects of a band 5 duplexer; simulation result vs. measurement of 3rd order harmonic generation, 3rd order intermodulation (IMD3) and triple beat are presented.