Effect of Defect Bands on the Electrical Characteristics of Irradiated GaAs and
Proton bombarded p-Si and neutron irradiated n-GaAs have been studied by DLTS, current±voltage, and capacitance±voltage measurements in metal±semiconductor junctions. The junctions were prepared by evaporation of Al onto silicon and of gold onto GaAs. Both junctions exhibited defect bands after bombardment. The bombardment has shifted the Fermi-level pinning position, increased the ideality factor in both junctions, and also affected the temperature dependence of the ideality factor and that of the capacitance. The results show that the main effect of the radiation is the generation of laterally inhomogeneous defects near the semiconductor surface.
Effect of Defect Bands on the Electrical Characteristics of Irradiated GaAs and Si
Proton bombarded p-Si and neutron irradiated n-GaAs have been studied by DLTS, current–voltage, and capacitance–voltage measurements in metal–semiconductor junctions. The junctions were prepared by evaporation of Al onto silicon and of gold onto GaAs. Both junctions exhibited defect bands after bombardment. The bombardment has shifted the Fermi-level pinning position, increased the ideality factor in both junctions, and also affected the temperature dependence of the ideality factor and that of the capacitance. The results show that the main effect of the radiation is the generation of laterally inhomogeneous defects near the semiconductor surface.
Electrical characterisation of Al/n-Si/p-Si Schottky junctions prepared by plasma immersion implantation
Abstract Current–voltage and capacitance–voltage measurements on Al/n–Si/p–Si Schottky junctions prepared by plasma immersion implantation of H + and P + ions have been performed in the temperature range of 80–360 K. Schottky barrier heights up to 0.79 V have been obtained which value is among the highest ones reported for p-Si so far. The unusual electrical properties are discussed in terms of full depletion approximation, lateral inhomogeneity of barrier height, Fermi-level pinning and band gap broadening due to hydrogenation. An overview of electrical behaviour of metal/n/p Schottky junctions is presented.