Graded-barrier graded-channel InP pseudomorphic power HEMT with 40% power added efficiency and 200 mW output power at 60 GHz
Summary form only given. We present state-of-the-art power and PAE results of InGaAs-InAlAs-InP HEMTs with optimized graded channel and graded Schottky barrier layers which demonstrate, for the first time, that InP-based HEMTs have a considerably better power/PAE combination than GaAs-based HEMTs at V-band. The 0.15 /spl mu/m gate length, eight gate finger, 500 /spl mu/m wide InP HEMTs were measured in a fixture under continuous wave (CW) conditions and showed 23 dBm (200 mW) output power and 40% PAE at 60 GHz with an input power of 17 dBm, a drain bias of 3 V, and a drain current of 125 mA. These results represent the best reported V-band power/PAE performance to date, and a comparison of these results with previously reported results for both InP- and GaAs-based HEMTs is shown. Our state-of-the-art results are attributed to the use of an optimized heterostructure incorporating pseudomorphic graded channel and graded Schottky barrier layers, and the use of compact 15 /spl mu/m/spl times/25 /spl mu/m dry etched through-substrate vias (substrate thickness of 50 /spl mu/m). The heterostructure was designed to achieve high gain, current (Imax) and breakdown voltage; all of which are requirements for a device with high power and PAE.
A high performance and low DC power V-band MMIC LNA using 0.1 mu m InGaAs/InAlAs/InP HEMT technology
We report the design and performance of state-of-the-art V-band MMIC LNA's using 0.1- mu m gate length pseudomorphic In/sub 0.60/Ga/sub 0.40/As/In/sub 0.52/Al/sub 0.48/As/InP HEMT's. The three-stage V-band LNA demonstrated an average of 3.0 dB noise figure between 56-64 GHz with 24-25.5 dB associated gain with a noise figure of 2.7 dB measured at 62 GHz. Furthermore, the DC power dissipation of this circuit was only 19.5 mW which is less than one-third the DC power dissipation of InGaAs/AlGaAs/GaAs HEMT versions. These results demonstrate the excellent potential of InP HEMT technology for millimeter-wave and low DC power applications.<<ETX>>
PASSIVE AND LOW-ENERGY RESEARCH AND PRACTICES-DEHUMIDIFICATION
Methods of achieving acceptable indoor conditions in overheated, temperate, and underheated humid climates are discussed and compared. Desiccants and desiccant systems utilizing solid and liquid sorbents and various low-energy mechanical systems are described and evaluated.