Low current wideband amplifier using 0.2 /spl mu/m gate MODFET fabricated by using phase-shift lithography
We have developed wideband amplifier that can keep over 10 dB gain at the drain voltage/current of 2 V/10 mA in the frequency range from 100 MHz to 3 GHz. The fabricated IC achieved low noise figure and high IP3 (output) of 1.4 dB and 30 dBm at 800 MHz, respectively. The present IC employs 0.2 /spl mu/m gate delta-doped MODFET structure fabricated by using phase-shift lithography.
A low power GaAs front-end IC with current-reuse configuration using 0.15 /spl mu/m gate MODFETs
We have developed a novel current-reuse configuration of front-end IC, where the current can be reused in the whole circuit blocks such as low noise amplifier, local amplifier and mixer. The power dissipation is reduced by the factor of three. Excellent high frequency performance such as conversion gain of 30 dB and NF of 1.6 dB at 1.5 GHz is attained under the conditions of supply voltage and current of 3.6 V and 3 mA, respectively.
Evidence of spurious results along with spatially autocorrelated errors in the context of geographically weighted regression for two independent SAR(1) processes
AbstractThe aim of this paper is to examine the performance of the geographically weighted regression (GWR) technique in terms of recognizing linear relationships at the local level. Using a Monte Carlo analysis with two independent spatially autocorrelated SAR(1) processes, this study finds that spurious behavior exists at the local level along with spatially autocorrelated errors. Therefore, GWR estimation results must be interpreted with caution.
