A high speed 16 kbit ECL RAM
A 16384 /spl times/ 1 bit ECL RAM (emitter coupled logic random access memory) with an access time of 15 ns and a power dissipation of 700 mW has been developed. The high packing density and performance were achieved by using a p-n-p load cell, a novel ECL circuit, and U-groove isolation. The test results proved that a p-n-p load cell is very effective in producing a fast high-density bipolar RAM having a capacity of over 64 Kbits.
A 3-ns 1-kbit RAM using super self-aligned process technology
A high speed 1-kbit ECL RAM with a typical access time of 2.7 ns and power dissipation of 500 mW has been developed, using a novel LSI fabrication process technology, together with a new reference circuit configuration. This paper describes an integrated transistor structure using this novel process technology, fabrication steps, a new sense circuit and performance of the RAM.
A new method of near field analysis
The problem of the accurate determination of the total electromagnetic field produced by a current distribution on a circular disc type aperture is examined. For comparison of the near and Fresnel region solutions, an exact Maxwellian integral is used as the starting point. Aperture and space coordinates are separated by the use of Bessel function addition theorems, allowing the field to be expressed as a sum of terms containing radial and angular integrals. The radial integrals involve only the disc (aperture) distribution and coordinates while the angular integrals involve only the elevation angle. The distance from origin appears implicitly in the series coefficients. These integrals are suitable for high speed computations and have been evaluated for a number of cases. The results are compared with the small angle and general Fresnel formula values for various observation angles, distances from the aperture, and aperture distributions.