Single crystal growth and phase stability of photovoltaic grade ZnSiP2 by flux technique
ZnSiP2 is a potential optoelectronic material with possible application in lasers, LED's, photonic integrated circuits, and photovoltaics. The development of ZnSiP2 as a photovoltaic material could address the current technological challenge of implementing a monolithic top cell on silicon for tandem photovoltaics. In this work we present a detailed description of the growth of ZnSiP2 single crystals, which has enabled thorough optoelectronic characterization. A flux growth technique was used, under various conditions, to grow ZnSiP2 single crystals in Zn solution. The results of these growth experiments, along with analysis of previously determined phase diagrams, show that three secondary phases form as a result of the Zn flux growth technique: Zn3P2, Si, and the remaining Zn flux. Potential reasons for the formation of these particular phases are discussed, but their presence is found to be non-detrimental, and they can easily be removed. The resulting single crystals are high purity and enable the characterization of the fundamental optoelectronic properties of ZnSiP2.
Energy conversion properties of ZnSiP2, a lattice-matched material for silicon-based tandem photovoltaics
ZnSiP2 demonstrates promising potential as an optically active material on silicon. There has been a longstanding need for wide band gap materials that can be integrated with Si for tandem photovoltaics and other optoelectronic applications. ZnSiP2 is an inexpensive, earth abundant, wide band gap material that is stable and lattice matched with silicon. This conference proceeding summarizes our PV-relevant work on bulk single crystal ZnSiP2, highlighting the key findings and laying the ground work for integration into Si-based tandem devices.
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