Aluminum-free strained-layer lasers emitting at 1.14 μm on low-composition InGaAs:n substrates by metalorganic chemical vapor deposition
Broad-area (W=150 /spl mu/m) single-quantum-well (SQW) lasers have been successfully fabricated on n-type In/sub 0.03/Ga/sub 0.97/As substrates without incorporating aluminum-containing alloys. The strained-layer InGaP-GaAs-InGaAs heterostructure was grown by atmospheric pressure metalorganic chemical vapor deposition. Due to both the increased substrate lattice constant and the partial strain compensation supplied by the tensile-strained GaAs optical guiding layers, a peak emission wavelength of 1.1403 /spl mu/m is obtained for a 1-mm cavity length.
The contraction of lattice constant and the reduction of growth rate in p-InGaAs grown by organometallic vapor phase epitaxy
We have investigated the effect of diethylzinc (DEZn) on the lattice constant and the growth rate of InGaAs. Introducing DEZn for p-type doping induces the contraction of lattice constant and the reduction of growth rate compared to undoped InGaAs. Depletion of indium is responsible for these effects. These effects are reduced at lower growth temperatures or at lower growth pressures. From the observed effects of the growth temperatures and the growth pressures on the contraction of the lattice constant, it is concluded that depletion of indium occurs in the gas phase.
Precision lattice parameter measurements on doped indium phosphide single crystals
Precision lattice parameter measurements have been made for various dopants as a function of doping concentration in order to provide a basis for understanding the reduction in dislocation density in heavily doped crystals. For the two dopants, Zn and S, which most effectively reduce the dislocation density, a monotonic decrease in lattice parameter with concentration is found for concentrations up to the mid 1018 cm-3 level. On the other hand, a slight increase in lattice parameter is found for doping with tin which dose not reduce the dislocation density.