Structual and Dielectric Properties of Pb(Zr0.53Ti0.47)O3 Thin Films Grown on LaNiO3 Buffered Si Substrates
Ferroelectric Pb(Zr0.53Ti0.47)O3 thin films with thickness of around 800 nm were prepared on LaNiO3 (LNO) buffered SiO2/Si substrates by sol-gel method. The LNO buffer layer serves as the bottom electrode and the template for growing PZT thin films with preferred orientation. The (110)-textured PZT thin films can be obtained on 250 nm-thick LNO buffered SiO2/Si substrates. Upon using the LNO buffer layer, the annealing temperature of the PZT films is lowered to 600degC. Our results indicate that PZT thin films prepared on LNO buffered Si substrates have good structural and dielectric properties for sensor and actuator applications.
Proceedings of IEEE Ultrasonics Symposium
The following topics were dealt with: SAW filters and oscillators; SAW systems and applications; SAW analysis, modelling and characterization; SAW materials and fabrication; sensors, motors and activators; physical acoustics and materials; acousto-optics; transducers, bulk waves and layers; NDE; industrial flow, ultrasonics and scattering; acoustic microscopy; tissue characterization and effects; medical imaging and arrays; flow measurement and transducers; signal processing; therapeutics
Description of roughness profiles by separating the random and periodic components
Abstract The probability that it is not possible to obtain a significant description of roughness profiles composed of random and periodic components by using statistical methods is discussed. It is shown that the random and periodic components can be separated by using the frequency spectrum and the autocorrelation function of the profile. The physical significance of the separate components is discussed and it is shown that it is possible to describe a long crested surface by a single profile using these components The method of separating the random and periodic components allows a parametrical description of the roughness profile to be given. It is then possible to use these parameters to calculate a synthetic signal sign with the same basic properties as the measured profile.