Analysis of grain structure evolution via image processing based on optical measurements of mc Si wafers
A fast and thorough characterization of grain structure in multicrystalline silicon (mc-Si) is crucial to improve crystal growth and thus bulk lifetime in solar cells. The presented characterization techniques are based on simple optical measurements on as-cut mc-Si wafers. An insight into the entire brick is gained by connecting 2D-information, computed via advanced pattern recognition techniques, over brick height. We identify robust statistical key parameters. Their development within typical bricks of different cast-Si techniques is compared and it is found that the distinct behavior of different materials in the lower part of the brick subsides towards the brick top where grain size distribution is similar.
Development of grain structures of multi-crystalline silicon from randomly orientated seeds in directional solidification
Abstract Development of grain structures of multi-crystalline silicon from small spherical seeds with random orientations in directional solidification was investigated. The electron backscattered diffraction (EBSD) analyses of the grains at different pulling rates, i.e., 1, 5, and 20 cm/h, were carried out. It was found that {112}/{111} orientations were dominant at the low crucible pulling speed, while {111} at the high pulling speeds. The percentage of {100} grains was found very low near the top of the ingots. The percentage of non-Σ grain boundaries was around 70% at the beginning and decreased with the solidification distance, while Σ3 grain boundaries or twins increased indicating the importance of twin formation during the development of grain structures. The mechanisms for grain competition and selection were further discussed.
Containerless solidification of germanium by electromagnetic levitation and in a drop-tube
Containerless solidification of germanium has been realized by electromagnetic levitation and drop-tube processing, respectively. The effect of undercooling in the range of 40–426 K on the as-solidified structures of levitation melted Ge drops (∼8.4 mm diameter) was investigated. For undercoolings less than 300 K, the lamellar twins were grown, whereas a microstructural transition to equiaxed grains was observed at undercoolings ≥300 K. Further increasing the undercooling to 400 K, a significant reduction in grain size was achieved. In addition to a similar microstructural development among the particles solidified during free fall in a 8.5 m drop-tube, high-undercooling-induced single crystals were found for some droplets less than 200 μm in diameter. The results on the transition from twins to fine equiaxed grains are accounted for by theories of solidification kinetics and a dendrite break-up model.