Formation and control of burrs in precision machining
The existence of the metal cutting burr not only reduces the dimension and shape accuracy of the workpiece, but also increases the manufacturing cost. Currently, the burr has been the most troublesome obstruction to high productivity and automation of machining processes. In this paper, the hazard of the burrs is systematically discussed in the precision or ultra-precision machining firstly and then, the formation principle and morphology of burrs in precision turning, planing, drilling and milling are studied. Finally many new technologies and methods of restraining or decreasing burrs have been developed by the cutting experiments.
FORMING PRINCIPLE OF TWO SIDE-DIRECTION BURR AND IT'S PREDICTION IN METAL CUTTING
The burr is one of the common phenomena occurring i n metal cutting operations. The mathematical-mechanical model of two side-dir ection burr formation and transformation is established with plane stress-strai n theory,based on the orthogonal cutting. The main laws of formation and change of the burr are revealed,and it is confirmed by experiment result,which first realizes prediction of the forming and changing of the two side-direction burr in metal cutting operation
Anomalous Annealing Behavior of Arsenic Implanted Silicon as a Function of Dose and Energy
Anomalous annealing behavior of damage in As implanted Si has been investigated by channeling effect measurements. Room temperature As implants with doses from 1014 to 2 × 1016cm-2 at energies ranging from 50 to 250 keV into Si were annealed over the range of 600°C to 1100°C. Anneal temperatures ≥ 950°C reduce the disorder for ion doses of 0.5 to 1 × 1016 cm-2 at energies between 50 and 250 keV. Anomalously high residual disorder was found for the intermediate doses of 2 × 1014 to 2 × 10/cm2 implanted above 100 keV. For this intermediate dose, annealing of implants performed at liquid nitrogen temperatures did not show significant reduction in this damage. However implants at 200° to 300°C indicate a lower amount of damage compared to the room temperature implants.