Suppression of defect propagation in semiconductors by pseudomorphic layers
The propagation of defects in semiconductor heterostructures has been studied both theoretically and experimentally. The simple model shows that defects originating from lattice‐matched regions can be prevented from entering, or can be trapped by, a pseudomorphic layer, depending on the signs of the strain induced by the defect and the strain in the pseudomorphic layer. A pseudomorphic layer can therefore prevent the defect from propagating across in and entering the critical active region of a device. Experimentally, the photoluminescence intensities of Al0.4Ga0.6As/GaAs quantum wells with and without pseudomorphic In0.2Ga0.8As layers for prevention of defect propagation have been compared. GaAs substrates of high etch pit density were used to generate defects below the quantum well and silicon implantation was used to generate defects above it. The elevated temperatures during molecular‐beam‐epitaxial growth and postimplant rapid thermal annealing serve to assist in defect propagation in the respective ...
Formation and passivation of defects in heterostructures with strained GaAs/InGaAs quantum wells as a result of treatment in a hydrogen plasma
The effect of processing heterostructures with GaAs/InGaAs quantum wells in the hydrogen plasma of an rf glow discharge on the photoluminescence spectrum and capacitive photovoltage of these structures is investigated. It is shown that strained quantum-well heterolayers hinder the diffusion of hydrogen and defects into the bulk, which causes the spatial distributions of recombination-active and passivated hydrogenic defect-like complexes in heterostructures, and the processes that create them, to differ appreciably from the same processes in uniform layers.
CLINICAL TRIALS OF THE ABDOMINAL LEFT VENTRICULAR ASSIST DEVICE (ALVAD): PROGRESS REPORT.
An abdominal left ventricular assist device (ALVAD) is undergoing controlled clinical trials in our institution. The ALVAD is pneumatically-actuated, synchronously or asynchronously with an external console and is interposed between the apex of the left ventricle and the infrarenal abdominal aorta. It is an order of magnitude more effective than conventional intraaortic balloon pumping. Thus far, we have implanted this pump in 21 patients (15 males and six females). The average age has been 50. The duration of cardiopulmonary bypass with intensive pharmacologic support and IABP until ALVAD implantation has been nearly 4 hours. The plasma hemoglobins prior to ALVAD implantation have averaged 168 mg%. The platelet counts at implantation have averaged 68,000 mm(3). The average duration of ALVAD support has been in excess of one day and the longest trial extended for one week. We have been able to remove the pump after ventricular recovery in two instances and effected cardiac allografting in one instance of ALVAD dependency. We have found that (1) the profoundly depressed left (and right) ventricles can recover if totally supported with this device; (2) the device can function in the presence of ventricular fibrillation and/or standstill; (3) the device can effectively replace both left and right ventricular function in the presence of normal pulmonary vascular resistance and microcirculatory hemodynamics; and (4) in the presence of impending multiple organ failure, procrastination in use is to be avoided.