Epitaxial Growth of Silicon by Vacuum Sublimation
SINGLE crystal layers of silicon up to several μ thick have been deposited on to a heated single crystal silicon substrate from a sublimating source. We believe we can grow good epitaxial crystals at a lower growing temperature than previous experiments1 by reducing the growth rate in a good vacuum free from contamination.
Silicon molecular beam epitaxy
Many works are now conducted in the worldwide scale on silicon molecular beam epitaxy (Si MBE) including homoepitaxy, doping, heteroepitaxy such as silicon/insulator, silicon/other semiconductor, and silicon/metal (silicide), and poly‐Si deposition. As for device applications, work is now moving from conventional discrete devices to integrated circuits and structures unique to Si MBE. In this paper, various aspects of Si MBE are reviewed.
Geomagnetic Polarity Epochs: Sierra Nevada Data, 3
Available paleomagnetic and radiometric results for about 60 igneous rocks 3.6 m.y. old or less are consistent with the following geomagnetic polarity epoch time scale: Brunhes normal polarity epoch, 0.0 to 0.85±0.15 million years; Matuyama reversed polarity epoch, 0.85±0.15 to 2.4±0.1 million years; Gauss normal polarity epoch, 2.4±0.1 to 3.35±0.1 million years; Gilbert reversed polarity epoch, 3.35±0.1 million years to (?). A brief interval of normal polarity (the Olduvai event) occurs within the Matuyama reversed epoch at about 1.9 m.y., and a brief interval of reversed polarity (the Mammoth event) occurs within the Gauss normal epoch at about 3.06 m.y. Data for twelve units from eastern California and Nevada, reported here for the first time, are particularly useful in defining the Gauss-Gilbert boundary and for recognizing the Mammoth event.