The modification of Si nanocrystallites embedded in a dielectric matrix by high energy ion irradiation
We have followed the effects of heavy ion irradiation on the structural, electrical, and photoluminescence properties of ensembles of silicon nanocrystallites embedded in a dielectric (SiO2) matrix. This was done as a function of the irradiation dose and the content of the Si phase. The results obtained can be accounted for self-consistently assuming that a relatively small dose of the irradiation enhances the crystallization while for higher doses the irradiation enhances the amorphization. The corresponding processes suggest that tuning of the above properties can be achieved by swift heavy ion irradiation.
Implantation of P ions in SiO2 layers with embedded Si nanocrystals
The effect of 10 13 –10 16 cm � 2 P ions implantation and of subsequent annealing on Si nanocrystals (Si-ncs), formed preliminarily in SiO2 layers by the ion-beam synthesis, has been studied. Photoluminescence (PL), Raman spectroscopy, high resolution electron microscopy (HREM), X-Ray Photoelectron Spectroscopy (XPS) and optical absorption were used for characterizations. The low fluence implantations have shown even individual displacements in Si-ncs quench their PL. Restoration of PL from partly damaged Si-ncs proceeds at annealing less than 1000 C. In the low fluence implanted and annealed samples an increased Si-ncs PL has been found and ascribed to the radiation-induced shock crystallization of stressed Si nanoprecipitates. Annealing at temperatures under 1000 C are inefficient when P ion fluences exceed 10 14 cm � 2 , thus becoming capable to amorphize Si-ncs. High crystallization temperature of the amorphized Si-ncs is attributed to a counteraction of their shell layers. After implantation of the highest P fluences an enhanced recovery of PL was found from P concentration over 0.1 at.%. Raman spectroscopy and HREM showed an increased Si-ncs number in such layers. The effect resembles the impurity-enhanced crystallization, known for heavily doped bulkSi. This effect, along with the data obtained by XPS, is considered as an indication P atoms are really present inside the Si-ncs. However, no evidence of free electrons appearance has been observed. The fact is explained by an increased interaction of electrons with the donor nuclei in Si-ncs. 2004 Elsevier B.V. All rights reserved.
Calculation of Complex Radiant Heat Load From Surrounding Radiator Surface Temperatures
Abstract A method for calculating the radiant heat exchange between an absorber and individual radiating components in its surroundings is reported. Radiator surface temperatures, ambient and absorber temperatures, and configuration factors for radiating components in the surroundings are used in the customary radiant heat exchange formulae. Simplified methods for calculating or estimating configuration factors for radiators of various shapes solely from angles, subtended at the absorber by the radiators are presented. The method has been verified in the laboratory under controlled conditions and has been used to advantage in the field studies. The method has advantages over the globe therometer method in certain applications.