The theory of the scattering-induced feeding-in in bent crystals
Abstract An analytical theory for the efficiency of scattering-induced transitions from a random to a channeled state (feed-in) in bent crystals is derived. The predictions from the theory are in good agreement with experiment and Monte Carlo simulations.
Investigation of rechanneling and dynamic equilibrium effects in crystals
Abstract The rechanneling and dynamic equilibrium effects are experimentally investigated in straight crystals at 70 GeV. Using the Lindhard reversibility rule, a qualitative analysis of the volume-capture possibilities in bent crystals is performed.
Planar dechanneling of protons in Si and Ge
Using the diffusion coefficient previously obtained from the inelastic scattering probability and the diffusion equation, half thicknesses for escape of MeV protons from the (110) planar channels of Si and Ge are calculated in detail. The agreement with the experiment is satisfactory. The difference between the diffusion coefficients along and across the channel plane is also discussed.