LABORATORY Plans towards Higher Laminosill
The Relativistic Heavy Ion Collider ( m C ) is designed PERF0 GE AND LUMINOSITY to provide luminosity over a wide range of beam energies LIMITATIONS and species, including heavy ions, polarized protons, and tric beam collisions. In the first seven years of operation there has been a rapid increase in the achieved peak and average luminosity, substantially exceeding design values. Work is presently underway to achieve the Enhanced Design parameters. Planned major upgrades include the Electron Beam Ion Source (EBIS), RHIC-11, and construction of an electron-ion collider (eRHIC). We review the expected RHIC upgrade performance. Electron cooling and its impact on the luminosity both for heavy ions and protons are discussed in detail.
Feasibility of increasing the energy of RHIC
In this paper we discuss the possibility of increasing the energy of beams in RHIC by as much as 30% with a modest trade-off in luminosity. The arc dipoles and quadrupoles were designed with considerable margin. For higher energies (>100 GeV/nucleon) the minimum /spl beta/* may be required to increase as the interaction region triplets saturate. The separator magnets (DX) have the least margin for increased field, so we consider three scenarios: allowing for a small crossing angle with the present DX magnets, upgrading the DX magnets to higher strength, and permitting a crossing angle of /spl sim/l/spl deg/ by removing the DX magnets altogether.
Selective etching of InP in NaF solution
Abstract The crossing porous structure of InP has been obtained by electrochemical etching in NaF solutions. The behavior of the periodic oscillation occurs at different potential ranges for the different concentrations of solutions, and it will disappear with the concentration of the solution decreased. The scanning electron microscope (SEM) image shows that the pores have two directions on the surface and are perpendicular to each other. The two directions are assigned to [0 1 1] and [ 0 1 ¯ 1 ], respectively. The SEM image of the cross-section also shows that the two directions are assigned to [1 1 1]B and [ 1 1 ¯ 1 ¯ ]B. Both are due to the selective etching of F− ions. The crossing porous structure of InP is a very promising feature for the three-dimensional structure of III–V compound semiconductors for photonic band gap materials.