Microscopic study of the surfactant‐assisted Si, Ge epitaxial growth
The Sb‐assisted Si, Ge epitaxial growth processes have been studied using high resolution photoemission. It is found that the initially ordered Sb monolayer on the Si(100) and Ge(100) surfaces occupies the epitaxial sites and fully saturates the surface dangling bonds. This results in a reduction of the surface energy. During the growth process, the Sb atoms and the deposited Si, Ge atoms change their positions. Sb atoms segregate to the growth front to form a new ordered layer while leaving the uniform epitaxial Si, Ge layer behind.
Symmetric arsenic dimers on the Si(100) surface.
Deposition of arsenic on Si(100) results in a well-ordered, highly passivated, and stable surface. From a comparison between angle-resolved photoemission data and ab initio pseudopotential calculations we conclude that the observed 2 x 1 reconstruction is caused by the formation of symmetric As-As dimers on the surface. The calculated surface band dispersion for this model is in excellent agreement with experiment.
A STUDY ON ORGANIZED RETAILING AND ITS CHALLENGES AND RETAIL CUSTOMER SERVICES
India is becoming most favored retail destination in the world. Today retail sector contributing 10% to countryâ€™s GDP. Indian retail industry is ranked among the ten largest retail markets in the world. The change of attitudes of Indian consumers and the emergence of organized retail formats have transformed the face of retailing in India. Organized retailing offers huge potential for future growth of retailing in India. This paper provides information about the growth of retailing in India. And also focuses on the challenges faced by organized retail sector in India. It also emphasize on major players of retailers in India and customer services provided by the retailers. This paper also deals with various retail formats and the opportunities for the growth of retail industry in India and also provides some suggestions to overcome the challenges.