Nanocrystalline Si-Based Resistive Humidity Sensors Prepared via HWCVD at Various Filament Temperatures
The growth of nanocrystalline Si on glass substrates via hot-wire chemical vapor deposition (HWCVD) at various filament temperatures and the fabrication of nanocrystalline Si-based resistive humidity sensors are reported. Experimental results indicate that the average diameter of nanocrystalline Si particles increases with increasing filament temperature. Measurements of the resistivity change of samples with humidity at 25°C show that the sensor response of samples fabricated at high filament temperatures is lower than that of samples fabricated at low filament temperatures. The sensitivity of the sensor increases with relative humidity.
Low Temperature Growth of Amorphous and Polycrystalline Silicon Films from a Modified Inductively Coupled Plasma
A conventional inductive rf discharge is modified by inserting a discharge antenna in a plasma vessel with magnetic multipole confinement, which gives a high-density (~1011 cm-3) silane plasma at very low pressures (~1 mTorr). This new type of inductively coupled plasma (ICP) enables high-rate deposition (~1 nm/s) of a-Si:H films at low substrate temperatures of ~100°C, which have the photoconductivity of 10-5–10-4 S/cm and the dark conductivity of 10-10–10-9 S/cm. Moreover, microcrystalline or polycrystalline silicon films are formed on glass substrates at moderate temperatures of 200–300°C where the dark conductivity becomes comparable to the photoconductivity and the X-ray diffraction pattern shows sharp peaks corresponding to the silicon crystalline surfaces. Mass spectrometric measurements of the highly dissociated silane plasma show unique radical compositions; ~90% of ions are hydrogen species (H3+, H2+, H+) while the density of neutral radicals (SiH3, SiH2, SiH) is lower than that of ionic radicals (SiH3+, SiH2+, SiH+, Si+). Thus, the main precursor of film growth from high-density plasmas may be ionic radicals rather than neutral radicals.
Archaeology and mud wall decay in a West African village
Abstract A detailed study of the processes of deterioration of mud walls and of the physical evolution and devolution of a contemporary West African village is seen to facilitate the location of decayed mud structures at a nearby archaeological site. Various climatic and pedological conditions at the site make it unlikely that such walls will be discerned. The archaeologist wishing to obtain the fullest and least biased picture of the settlement configuration of the ancient community should therefore heed all the inferential lessons to be had from a focused ethnographic investigation. Given similar climatic situations and practices of house construction, taphonomy and ethnographic analogies may both be necessary for a valid reconstruction of an archaeological settlement.