Depth / Conversion Characterization of Electron-beam Initiated Polymerization
Confocal Raman microscopy was used to determine polymer conversion as a function of depth into electron-beam cured coating samples. Samples were irradiated in atmospheres with varying levels of oxygen. As expected, conversion near the surface increased as the level of oxygen was decreased. Samples were also irradiated under well-inerted conditions while varying the accelerating potential (voltage) of the electron beam. The results show low conversion near the sample bottom at the lower voltages. This lower conversion is consistent with inadequate energy penetration predicted by Monte Carlo simulations.
IONIZING RADIATION AND POLYMERS
Literature concerning the influence of ionizing radiation on macromolecular substances is reviewed. From this point of view, some established relations determining the course of polymerization reactions initiated by ionizing radiation, the radiochemical preparation of grafted copolymers, and the effect of radiation on solid polymers resulting either in degradation or in the formation of a cross-linked structure are treated. 64 references. (auth)
Selective etching of InP in NaF solution
Abstract The crossing porous structure of InP has been obtained by electrochemical etching in NaF solutions. The behavior of the periodic oscillation occurs at different potential ranges for the different concentrations of solutions, and it will disappear with the concentration of the solution decreased. The scanning electron microscope (SEM) image shows that the pores have two directions on the surface and are perpendicular to each other. The two directions are assigned to [0 1 1] and [ 0 1 ¯ 1 ], respectively. The SEM image of the cross-section also shows that the two directions are assigned to [1 1 1]B and [ 1 1 ¯ 1 ¯ ]B. Both are due to the selective etching of F− ions. The crossing porous structure of InP is a very promising feature for the three-dimensional structure of III–V compound semiconductors for photonic band gap materials.