Deuteron NMR spectra of ND4ClO4 single crystal at low temperatures.
2H NMR spectra of ND4ClO4 single crystal were obtained at v0 = 44 MHz. Orientation and temperature (1.9-75 K) dependences were measured. Fitting the spectra gives the effective quadrupole coupling constants for all deuterons and the ground torsional level structure. The isotope reduction of the (A-T) and (A-E) tunnelling splittings, i.e., the ratios of the respective splittings for NH4+ and ND4+, were found to be different. The splittings at T = 24 K are about 60% of the helium temperature values. The spectrum undergoes intermediate narrowing by reorientations between 26 and 34 K and tunnelling related features in the spectra are eradicated. After reaching the extreme narrowing limit, a doublet with gradually decreasing separation was observed, what was attributed to averaging by torsional oscillations of increasing amplitude. At high temperatures (T > 75 K), the narrow spectrum reflects fast multiaxial reorientation of the ammonium ion.
Proton magnetic resonance studies of quantum mechanical tunnelling of ammonium ions in several ammonium salts
Proton magnetic resonance spectra were measured at 1·8 K for the compounds NH4Br, NH4I, NH4SCN, (NH4)2CrO4, and NH4NO3. The observed derivative curves cannot be explained on the basis only of the dipolar interactions between protons in the NH4 + ion held rigidly in the crystal lattices. We considered the effect of quantum mechanical tunnelling on the rotation of an NH4 + ion about its C3-axis and calculated the theoretical lineshapes for various assumed values of the tunnelling splitting constants. Comparison between experiment and theory is quite satisfactory, and the tunnelling splitting constants, Δ, in the librational ground state of the ammonium ion in these salts are determined. It is found that there is a linear relation between the Δ values and the potential barrier to reorientation.
Photoreflectance characterization of vanadium-doped GaAs layers grown by metalorganic vapor phase epitaxy
Abstract We characterized the vanadium-doped (GaAs:V) layers grown on GaAs substrate by metalorganic vapor phase epitaxy. The conductivity of the samples is checked by the Hall effect measurements, and it is n type with electrons concentration ranging from 2×10 13 to 2×10 17  cm −3 . We used the photoreflectance technique (PR) to study the effect of vanadium doping on the optical properties of GaAs. Our experimental results show that the built-in electric field F and the broadening parameter Γ 0 increase with V-doping concentration. Furthermore, the temperature dependence of the built-in electric field and the broadening parameter of GaAs:V samples have been investigated by PR. It has been observed that these parameters increase with increasing temperature. The decrease of the built-in electric field with decreasing temperature is due to the photovoltage effect.We characterized the vanadium-doped GaAs (GaAs:V) layers grown on GaAs substrate by metalorganic vapor phase epitaxy.