3-D Simulator of Laser Crystallization for Polycrystalline-Silicon Thin-Film Transistors
A 3-D simulator of laser crystallization for polycrystalline-silicon thin-film transistors has been developed. Random nucleation, crystal growth velocity, latent heat emission, and partial crystallization are modeled, and a 2-D algorithm is extended to a 3-D algorithm. The <formula formulatype="inline"><tex Notation="TeX">$\mu$</tex></formula>-Czochralski technique is analyzed using the 3-D simulator, and it is found that the grain size becomes large when the initial temperature is high after the laser irradiation.
Analysis of μ-Czochralski Technique Using Two-Dimensional Crystallization Simulator
μ-Czochralski technique has been analyzed using two-dimensional crystallization simulator. It is observed that the temperature is relatively uniform in the entire Si region after the laser irradiation because the heat conductivity of the Si region is much higher than that of the underneath SiO2. Grain growth advances from the grain filter to the channel region and continues until it collides with what advances from random nucleation in the channel region. When the initial temperature is high, the random nucleation rarely occurs even under the supercooling condition, and the grain size becomes large. Moreover, it is qualitatively reproduced that the grain size increases as the irradiated energy of the laser irradiation increases.
Industrial inorganic pigments
General Chemical and Physical Properties Behavior of Pigments in Binders White Pigments Titanium Dioxide Zinc Sulfide Colored Pigments Oxides and Hydroxides Cadmium Pigments Bismuth Pigments Ultramarine Pigments Iron Blue Pigments Carbon Black Properties Production Processes Specialty Pigments Magnetic Pigments Anticorrosive Pigments Luster Pigments Transparent Pigments.