The comprehensive study of liquid phase oxidation on GaAs-based transistor applications
The GaAs-based HEMTs with gate oxide and HBTs with surface passivation prepared by liquid phase oxidation (LPO) will be demonstrated. As compared to the Schottky-gate HEMTs, the lower gate leakage currents, higher breakdown voltages, and improved RF performances make the proposed technique suitable for high-power and high-speed applications. Moreover, the HBTs with oxide passivation possess the characteristics of lower surface recombination currents, higher breakdown voltage, and improved higher dc current gain.
AlGaAs/InGaAs metal-oxide-semiconductor pseudomorphic high-electron-mobility transistor with a liquid phase oxidized AlGaAs as gate dielectric
The investigation describes AlGaAs/InGaAs/GaAs metal-oxide-semiconductor pseudomorphic high-electron-mobility transistors (MOS-PHEMTs). The gate dielectric is obtained by oxidizing AlGaAs in liquid phase. The MOS-PHEMTs have a larger gate swing voltage, a lower gate leakage current and a higher breakdown voltage than their counterpart PHEMTs do.
A planarized shallow-trench-isolation for GaAs devices fabrication using liquid phase chemical enhanced oxidation process
A new planarized trench isolation technique for GaAs devices fabrication by a liquid phase chemical-enhanced oxidation (LPCEO) method is proposed. The LPCEO-trench-isolation technique can be operated at low temperature with a simple and low-cost process. As compared with conventional mesa isolation, the LPCEO-trench-isolation can provide better planarity and isolation properties. Finally, GaAs MOSFETs fabricated with LPCEO-trench-isolation and selective oxidized gate both by the LPCEO method are demonstrated.