Monolithic high voltage gated diode crosspoint array IC
A new gated diode crosspoint integrated circuit has been developed for telephone switching system applications. Central to the design of this high voltage device has been the extensive use of numerical modeling techniques. Two-dimensional simulation of the individual dielectrically isolated components that comprise the switch array has led to an improvement in their electrical parameters together with size reduction for each of their geometries. Additional calculations dealing with the routing of interconnect metalization about the perimeter of components has indicated how such runners may encroach upon these elements without degrading their performance so that higher density circuitry could be assembled onto a chip. The resulting IC therefore realizes substantial advances over its predecessors, including: increased scale of integration (9 vs. 4 crosspoint pairs), more compact design (2.1 vs, 3.6mm2per crosspoint pair), higher OFF state minimum blocking voltage (600 vs. 530 volts), and reduced ON state incremental resistance (10 vs. 18 ohms).
A physical model for the conductance of gated p-i-n switches
Analytic models for the steady-state forward current-voltage characteristic of a p+-p-π-p-n+gated-diode switch (GDS) are developed. The models, which apply generally to gated bipolar switches, are based on a system of equations derived from basic p-i-n-diode theory. They provide physical insight into the GDS operation and suggest optimal design criteria to minimize the de and incremental resistances at high currents. Measured data taken from a variety of GDS test structures are discussed in support of the models.
Microwave source with enhanced radiation power based on orbitron MASERs
We have proposed the design of high power microwave source in a vacuum tube based on the theory of negative mass instability. The proposed source does not operate based on a slow-wave structure but instead makes use of accelerated charged particles. In our structure, an electron emitter injects the charged particles into to the cavity. Emitted particles move around the anode, which leads to electron acceleration and emission of electromagnetic waves with a specific frequency. In this paper, we have enhanced the output power and frequency of microwave source by variation of particles initial energy and the number of anodes incorporating their specific arrangement and applied voltages. Working at room temperature, compactness, wide bandwidth, and tunability of output frequency are among the advantages of the proposed source.