Complementary GaAs SIS FET inverter using selective crystal regrowth technique by MBE
A first complementary GaAs semiconductor-insulator-semiconductor (SIS) FET inverter has been fabricated by constructing n-channel and p-channel GaAs SIS FET's on a single LEC GaAs substrate using MBE selective crystal regrowth technique. The fabricated inverter shows an inverter operation as a really low-power complementary inverter.
n+ -GaAs/undoped GaAlAs/undoped GaAs field-effect transistor
The first self aligned accumulation-mode GaAs MIS-like FET having an n+ -GaAs/undoped GaAlAs/undoped GaAs structure is reported. The FETs fabricated show the threshold voltage of almost zero (Vth = 0.035 V) and very uniform (σVth = 0.013 V) characteristics, as expected. The transconductance is as high as 170 mS/mm, which is the highest value ever reported on GaAs MIS-like FETs.
Temperature dependence of the mobility of two‐dimensional hole systems in modulation‐doped GaAs‐(AlGa)As
The temperature dependence of the mobility of two‐dimensional hole systems at modulation‐doped GaAs‐(AlGa)As heterojunctions is determined. Its shape follows closely the equivalent curve for high‐purity p‐type bulk GaAs. Low‐temperature mobilities beyond 4×104 cm2/Vs are found for areal hole densities of 5×1011 cm−2. The equivalent scattering times reach those of the best modulation‐doped electron systems. In the temperature range where acoustic mode scattering prevails a T−3/4 dependence was observed. Studies under light illumination could not detect any persistent photoconductive effect in two‐dimensional holes.