Failure analysis on the standby current due to dislocation in STI structure of flash memory
The technology of increasing Internal Vcc without using memory tester is used to enhance the photon emission and the failure range is defined in detail by nano probing. With these methods, we found out that the leakage current was caused by dislocations of STI arranged in a row.
Failure analysis of ULSI circuits using photon emission
A real-time failure analysis technique for ULSI circuits using photon emission is proposed. This technique utilizes a photon detection system combined with a circuit tester. Improved failure detection is achieved because the tester can bias arbitrary blocks in the ULSI chip. Detecting and correct process defects and design errors improves the reliability of the ULSI chip. >
Defect reaction and its application to silicon materials technology
Abstract As typical examples of the application of defect reaction to silicon materials technology, strengthening of silicon wafers due to the presence of supersaturated oxygen impurities and gettering of metallic impurities at various types of structural defects are discussed on the basis of the work of the author’s group. The morphology of oxygen precipitates formed on dislocations is shown to play an important role in strengthening of silicon wafers. Dependencies of the gettering efficiency at structural defects on the species and concentration of impurities, the cooling rate of crystal, and the type of structural defects are demonstrated with copper and iron impurities in silicon.