Population inversion in optically pumped asymmetric quantum well terahertz lasers
Intersubband carrier lifetimes and population ratios are calculated for three- and four-level optically pumped terahertz laser structures. Laser operation is based on intersubband transitions between the conduction band states of asymmetric GaAs-Ga1−xAlxAs quantum wells. It is shown that the carrier lifetimes in three-level systems fulfill the necessary conditions for stimulated emission only at temperatures below 200 K. The addition of a fourth level, however, enables fast depopulation of the lower laser level by resonant longitudinal optical phonon emission and thus offers potential for room temperature laser operation.
Stark ladders as tunable far-infrared emitters
A superlattice of GaAs/Ga1−xAlxAs quantum wells forms a Stark ladder under the influence of a perpendicular electric field. A two level incoherent emitter system, formed by radiative intersubband transitions between adjacent wells, is investigated as a tunable far-infrared radiation source. Intersubband transition rates are calculated at 4, 77, and 300 K for applied fields from 0 to 40 kV cm−1. It is shown that the quantum efficiency of the radiative emission reaches a maximum at low temperatures for a field of 32 kV cm−1. Under these conditions the emission wavelength is 38 μm with an estimated power output of 1.1 mW.
Fragment Rotational State Distributions From The Dissociation Of NeIBr: Experimental And Theoretical Results
The IBr fragment rotational state distributions that result when the NeIBr van der Waals molecule undergoes vibrational predissociation have been measured in a pump–probe laser‐induced fluorescence experiment. Independent of initial vibrational state and the number of quanta of vibrational energy lost from the I–Br coordinate, the rotational distributions extend over the full range of energetically accessible states. From the observation of energetic constraints on the rotational distribution, the dissociation energy (D0) is calculated to be 65.5±1.2 cm−1 for the A electronic state, v=16. For the X electronic state, v=0, D0=71.8±1.2 cm−1. Quantum mechanical bound state calculations carried out on a model A electronic state potential energy surface are in quantitative agreement with this result. The rotational distributions are broader than that predicted by either a Franck–Condon or classical impulsive model for the dissociation. The distributions are qualitatively in accord with classical trajectory calc...