SiO2/TiO2 distributed Bragg reflector near 1.5 μm fabricated by e-beam evaporation
The authors report on the fabrication and characterization of SiO2/TiO2 distributed Bragg reflector (DBR) mirrors operating at the eye safe and optical communication wavelength window, λ = 1.5 μm. Our experimental results demonstrated that SiO2/TiO2 DBR mirrors with reflectivity exceeding 95% at λ = 1.5 μm can be achieved using e-beam evaporation in conjunction with postdeposition thermal annealing process in ambient air. It was found that the postdeposition annealing process transformed the crystal structure of the as-deposited TixOy to TiO2, leading to a significant reduction in optical absorption. Erbium doped III-nitride semiconductors incorporating DBR mirrors at 1.5 μm emission may open up many novel applications, including infrared emitters, optical amplifiers, and high power infrared lasers.
Broadband high-reflective distributed Bragg reflectors based on amorphous silicon films for semiconductor laser facet coatings.
We fabricated amorphous silicon (a-Si)-based distributed Bragg reflectors (DBRs) consisting of alternating dense/porous films (i.e., pair) for a center wavelength (λ(c)) of 0.96 μm by oblique angle deposition (OAD) technique using an electron-beam evaporation system. The dense (high refractive index, i.e., high-n) and porous (low-n) a-Si films were deposited at two incident vapor flux angles of 0° and 80° in the OAD, respectively. Their optical reflectance characteristics were investigated in the wavelength range of 0.6-1.5 μm, including theoretical comparison using a rigorous coupled-wave analysis method. Above three pairs, the reflectivity (R) of a-Si DBRs was almost saturated at wavelengths around 0.96 μm, exhibiting R values of >97%. For the a-Si DBR with only three pairs, a broad normalized stop bandwidth (Δλ/λ(c)) of ∼22.5% was obtained at wavelengths of ∼0.87-1.085  μm, keeping high R values of >95%. To simply demonstrate the feasibility of device applications, the a-Si DBR with three pairs was coated as a high-reflection layer at the rear facet of GaAs/InGaAs quantum-well laser diodes (LDs) operating at λ=0.96  μm. For the LDs coated with three-pair a-Si DBR, external differential quantum efficiency (η(d)) was nearly doubled compared to the uncoated LDs, indicating the η(d) value of ∼50.6% (i.e., η(d)∼25.5% for the uncoated LDs).
Anaesthetic aspects of bronchial fistula.
SINCE the term bronchial fistula can, from the practical point of view, be applied to any abnormal connection between the inside of the intrathoracic respiratory system and the outside, it includes a very wide assortment of cases. Fistulae vary in their acuteness and duration from a few minutes up to thirty years or more (Huizinga and Smelt, 1950), and in their consequences from the rapidly fatal to the almost insignificant. Although the anaesthetic management of these cases falls mainly within the province of those working in specialized units, any anaesthetist may be caught unawares from time to time. Quite apart from this consideration the subject is well worth discussing because of its intrinsic interest and because it has probably called for as much anaesthetic ingenuity and resourcefulness as any other subject within the specialty.