Real-time material quality prediction, fault detection, and contamination control in AlGaN/GaN high electron mobility transistor metalorganic chemical vapor deposition process using in situ chemical sensing
Gallium nitride and its alloys promise to be key materials for future heterojunction semiconductor devices aimed at high frequency, high power electronic applications. However, manufacturing for such high performance products is challenged by reproducibility and material quality constraints that are notably higher than those required for optoelectronic applications. To meet this challenge, in situ mass spectrometry was implemented in AlGaN∕GaN∕AlN metalorganic chemical vapor deposition processes as a real-time process and wafer state metrology tool. In particular, the various pregrowth gas phase impurity levels within the reactor, measured by mass spectrometry in real time, were correlated to photoluminescence band-edge and deep-level properties measured postprocess. Band-edge intensities increased and deep-level intensities decreased with lower oxygen-containing impurity levels in the pregrowth environment. These real-time indications of oxygen impurity incorporation were used for fault detection and to ...
In situ chemical sensing in AlGaN∕GaN metal organic chemical vapor deposition process for precision film thickness metrology and real-time advanced process control
In situ mass spectrometry is implemented in AlGaN∕GaN∕AlN metalorganic chemical vapor deposition processes on SiC substrates as a real-time process- and wafer-state metrology tool. Dynamic chemical sensing through the process cycle, carried out downstream from the wafer, revealed generation of methane and ethane reaction by-products as well as other residual gas species. The methane and ethane by-products are believed to reflect the two parallel chemical reaction pathways leading to GaN-based materials growth, namely the gas phase adduct formation route and the direct surface decomposition of the metalorganic precursor, respectively. Having detected both types of by-products as evidence for the presence of both paths, we monitored and integrated the methane and ethane signals to derive a real-time film thickness metric. Integrating the sum of the two by-product signals in this manner through the AlGaN growth period (∼1min or less) enabled us to predict the AlGaN cap layer thickness (∼20nm) to within ∼1% o...
Fundamental models of the metalorganic vapor-phase epitaxy of gallium nitride and their use in reactor design
A fundamental reaction-transport model describing the metalorganic vapor-phase epitaxy (MOVPE) of GaN from trimethyl-gallium (TMG) and ammonia has been developed. This model has been tested against experimental data from research-scale and industrial-scale reactors, A simplified version of the model that includes only transport phenomena and a unity sticking coefficient of the limiting film precursor (TMG) to the surface of the growing film was found to accurately capture observed film deposition variations in an early variant of the Thomas Swan close-coupled-showerhead 3 × 2 reactor. Modifications of the Thomas Swan reactor, in line with the findings suggested by this work, enabled state-of-the-art thickness uniformity to be achieved. The model has been used to develop performance diagrams for conceptual multi-aperture MOVPE reactors and for the Thomas Swan system. These performance diagrams identify regions of the parameter space of the reactor which correspond to minimal variations in film growth rate across large-area substrates. Published by Elsevier Science B.V.