Low current wideband amplifier using 0.2 /spl mu/m gate MODFET fabricated by using phase-shift lithography
We have developed wideband amplifier that can keep over 10 dB gain at the drain voltage/current of 2 V/10 mA in the frequency range from 100 MHz to 3 GHz. The fabricated IC achieved low noise figure and high IP3 (output) of 1.4 dB and 30 dBm at 800 MHz, respectively. The present IC employs 0.2 /spl mu/m gate delta-doped MODFET structure fabricated by using phase-shift lithography.
A low power GaAs front-end IC with current-reuse configuration using 0.15 /spl mu/m gate MODFETs
We have developed a novel current-reuse configuration of front-end IC, where the current can be reused in the whole circuit blocks such as low noise amplifier, local amplifier and mixer. The power dissipation is reduced by the factor of three. Excellent high frequency performance such as conversion gain of 30 dB and NF of 1.6 dB at 1.5 GHz is attained under the conditions of supply voltage and current of 3.6 V and 3 mA, respectively.
Sub‐quarter‐micron gate pattern fabrication using a transparent phase shifting mask
Phase shifting technologies with an i‐line stepper are applied for the application of defining sub‐quarter‐micron gate patterns for GaAs field‐effect transistor (FET) devices. Transparent‐type phase‐shifting masks which have no chromium layer for printing the patterns are used. Using the phase‐shifting technologies for gate delineation, it is shown that fine gate patterns with large pad areas can be defined. We have fabricated gate patterns for high‐performance GaAs FET devices with gate lengths in the 0.15–0.5 μm range.