Electrical properties of MIS structures with silicon nanoclusters
The theoretical and experimental investigations of electrical properties of the Al-SiO2- -SiO ( ncs Si − 2-Si structures grown using high temperature annealing SiOx, x < 2, have been carried out. It has been experimentally found that the Al-SiO2- ( ) ncs Si − -SiO2-Si structures with the tunnel dielectric layer revealed the effect of dynamic memory. Electric properties and parameters of the interface states located between and SiO ncs Si− 2 were studied in detail by measuring of current-voltage, capacitance-voltage, and thermally stimulated current characteristics.
Kinetics of structural and phase transformations in thin SiOx films in the course of a rapid thermal annealing
Infrared spectroscopy and analysis of photoluminescence spectra have been used to study variations in the composition of the oxide phase in a SiOx film and the precipitation of the Si phase in the course of a rapid thermal annealing for 1–40 s at temperatures of 500–1000°C. Kinetics of phase segregation has been observed for the first time at temperatures of 600–700°C: an increase in the amount of precipitated silicon as the annealing duration increases followed by an eventual leveling off. The phase separation is brought to completion in a time as short as 1 s at temperatures higher than 900°C. The diffusion coefficient is estimated in the context of a model of the diffusion-controlled formation of Si nanoparticles. The obtained values of the diffusion coefficient exceed, by five to ten orders of magnitude, those of the silicon diffusion coefficients in SiO2 and Si and are comparable to the diffusion coefficients of the oxygen contained in these structures. It is assumed that oxygen mobility forms the basis for the mechanism of structural and phase transformations in the SiOx layers and for the formation of Si nanoparticles in the course of annealing.
RIP - General Purpose Interactive Display at HHIRF
RIP is a general purpose interactive code for display and analysis of data acquired with the Holifield Heavy Ion Research Facility (HHIRF) accelerators at Oak Ridge National Laboratory. The HHIRF data acquisition system includes a version of RIP for on-line display of one-and two-dimensional histograms on color graphic terminals and hard copy on color printer/plotters. General features of the program and interactive techniques will be described.