Growth and characterization of CdZnS thin film buffer layers by chemical bath deposition
In this paper we report the study of CdZnS thin films grown on the soda-lime glass (SLG) substrates by chemical bath deposition (CBD) process for buffer layer applications in CuGaSe/sub 2/ (CGS) solar cells. Structural, surface morphology, optical, and electrical properties of as-deposited CdZnS films were investigated by XRD, SEM, spectrophotometer, and four probes resistivity measurements as a function of Zn-composition in the solution. The CdZnS films have hexagonal structures. The grain size of CdZnS films was found to increase with increasing Zn-content in the solution. The films with 30% of Zn in the solution showed a better than 80% transmittance for wavelengths longer than 600 nm and film thickness less than 50 nm. The values of energy band gaps obtained are 2.40, 2.55, and 2.70 eV for Zn-content of 0, 30, and 50%, respectively. The resistivity of CdZnS films was found to increase as the Zn content increases.
The Effect of Zn Concentration on the Optical Properties of Cd 10-x Zn x S Films for Solar Cells Applications
In this paper, Cd10–xZnxS (x = 0.1, 0.3, 0.5) films were deposited by using chemical spray pyrolysis technique, the molar concentration precursor solution was 0.15 M/L. Depositions were done at 350?C on cleaned glass substrates. X-ray diffraction technique (XRD) studies for all the prepared film; all the films are crystalline with hexagonal structure .The optical properties of the prepared films were studied using measurements from VIS-UV-IR spectrophotometer at wave-length with the range 300 - 900 nm; the average transmission of the minimum doping ratio (Zn at 0.1%) was about 55% in the VIS region, it was decrease at the increasing of Zn concentration in the CdS films, The band gap of the doped CdS films was varied as 3.7, 3.8, 3.6 eV at x = 0.1, 0.3 and 0.5 respectively.
Preparation and properties of electrodeposited ternary CdSxSe1-x and ZnxCd1-xS films
Abstract Mixed CdS-CdSe and ZnS-CdS films were electrodeposited cathodically onto indium tin oxide substrates from dimethylsulphoxide solutions at 120°C containing cadmium chloride, elemental sulphur, and elemental selenium or zinc chloride. The mixed crystals were characterized structurally based on X-ray diffraction and scanning electron microscopy analyses. The optical absorption and the photoconductive properties of the mixed films were also examined. It is found that the band gap of the films can be varied between 2.1 and 2.8 eV by changing the composition of the deposition solution.