Optimum built-in barrier height utilizing an extended concept of impedance matching
Schottky-barrier height optimization for high-frequency usage is analytically discussed with an extended concept of impedance matching. The optimum value of 0.3 eV is almost a universal constant under various operating conditions, and agrees well with the previous prediction obtained by large signal simulation and InxGa1-xAs experiments.
Schottky-barrier devices with low barrier height
It is calculated that the barrier height of the Schottky diode has an optimum value of ∼0.3 V for the detector, the harmonic generator, and the frequency converter at high frequency. The low barrier height can be realized by the mixed crystal (n-type) composed of InAs (i.e., In x Ga 1-x As,InAs y P 1-y , and In x Ga 1-x As y P 1-y ).
Solid Solution in A IIIBV Compounds
Ranges of solid solution have been investigated in systems composed of two AIIIBV compounds, particularly GaSb-InSb, GaAs-InAs and InAs-InSb. It is found that in practically all cases considered complete solid solution throughout the whole range of composition can be obtained, but that this equilibrium condition can only be reached under special conditions of temperature and time of annealing. The work includes the investigation of solidus curves and the possible presence of low temperature miscibility gaps. In all cases, it is found that if normal annealing methods are used, equilibrium can be attained with a reasonable length of time of anneal only in the case of compressed powder specimens. Consideration is given to the methods available for producing alloys in equilibrium in the solid form.