Extremely low threshold InGaSsp/InP DFB PPIBH laser diode
We report on an extremely low threshold InGaAsP/InP DFB laser realized by an MOCVD/LPE hybrid process.
1 Gbit/s automatic-power-control-free zero-bias modulation of very-low threshold MQW laser diodes
The first 1 Gbit/s, automatic-power-control-free zero-bias modulation has been successfully demonstrated using very low-threshold GaAs/AlGaAs MQW lasers. A stable multi-longitudinal mode oscillation due to zero-bias modulation was also observed. This result simplifies driving circuitry and is an important step towards realisation of high-speed and high-density optoelectronic integrated circuits.
Anomalous Annealing Behavior of Arsenic Implanted Silicon as a Function of Dose and Energy
Anomalous annealing behavior of damage in As implanted Si has been investigated by channeling effect measurements. Room temperature As implants with doses from 1014 to 2 × 1016cm-2 at energies ranging from 50 to 250 keV into Si were annealed over the range of 600°C to 1100°C. Anneal temperatures ≥ 950°C reduce the disorder for ion doses of 0.5 to 1 × 1016 cm-2 at energies between 50 and 250 keV. Anomalously high residual disorder was found for the intermediate doses of 2 × 1014 to 2 × 10/cm2 implanted above 100 keV. For this intermediate dose, annealing of implants performed at liquid nitrogen temperatures did not show significant reduction in this damage. However implants at 200° to 300°C indicate a lower amount of damage compared to the room temperature implants.