Investigation of doping profile effect on characteristics of ion-implanted GaAs MESFET
Ion-implanted GaAs MESFET was modeled and dependence of MESFET characteristics on doping profile parameters was found. Dependence of transistors characteristics on doping profile parameters variation was investigated.
Impurities and doping influence on characteristics of GaAs field effect transistor with Schottky barrier
In this work ion-implanted MESFET was modeled and its characteristics dependence from substrate was found. Concentrations of deep and shallow centers in substrate were found.
Tradeoffs and limitations in statistically based image reconstruction problems.
TRADEOFFS AND LIMITATIONS IN STATISTICALLY BASED IMAGE RECONSTRUCTION PROBLEMS