Application of Spectral Density of Transitions in Semiconductor Laser Theory
In this paper the formulas for spectral speed of an emission, for gain, for spectral - volume energy density of spontaneous radiation, for modulation of spontaneous radiation output power spectrum near to a threshold, based on formula for spectral density of transitions, are derived. The contrast modulation index mk was defined; using of mk determines more split-hair accuracy of definition |thetas| from experimental data.
On nonlinear effect in semiconductor lasers
The nonlinear effect in. the injection semiconductor laser is studied in detail for a real model of the line. It is shown that the gain depends on the natural line bandwidth that in turn is a function of energy density.
Time behavior of gas pressure and PD activity in insulation cavities under AC voltage
In the framework of developing defect-based life models (i.e. the life model of partial discharge-induced damage growth from a micro-void in polymer matrix), ageing tests were performed on PE layered specimens with artificial cavities under constant gas pressure and constant gas volume conditions, respectively. Time behavior of the discharge repetition rate and amplitude were recorded and compared under these two conditions. Results show that pressure variation has little influence on PD activities at constant gas volume. Under constant gas pressure, the evolution of gas volume has similar characteristic to the product of discharge amplitude and repetition rate.