Research of high voltage RSDS triggering circuit in multi-modules capacitor discharge PFN for EML
In this paper, a compact pulsed power capacitor discharge module is considered to realize large current output for electromagnetic launching. A novel triggering circuit is proposed based on inductive adder circuit topology to provide optimal reverse current for controlling the high voltage RSDs assembly switching properly. Experimental results verified the IAT triggering circuit electrical and magnetic design.
New principles of high power switching with semiconductor devices
Abstract The present-day laser and accelerator technology, new types of radar, controlled fusion research and other areas of science and applications require very high power switching (MW to TW) in the micro-, nano-, subnanosecond ranges. The new principles of switching make use of semiconductor devices for such power switching. The principle of switching involving a controlling plasma layer has been employed to develop three new classes of devices, namely, reversely switched dynistors (RSD), reversely controlled transistors (RCT), and drift step-recovery diodes (DSRD). The highest-power microsecond-range RSDs switch 300 kA single pulse current, and 50 kA current at 100 Hz; high power DSRDs generate current pulses of 103 A in a few nanoseconds at frequencies > 104 Hz. The switching principle based on the impact ionization wave was used to develop diode pulse sharpeners (PS) switching power of a hundreds kW in tens of picoseconds at a frequency > 104 Hz. By this principal parameter, pulsed switching power, all these devices surpass the devices employing the conventional principles.
Fast high-voltage pulse generation using nonlinear capacitors
Many pulsed power applications require short high-voltage pulses with a high-repetition rate. Conventional high-voltage discharge pulse-switches such as thyratrons, spark gap switches, and vacuum tube switches have a short lifetime, whereas the semiconductor switches have a long lifetime and high reliability. The semiconductor switches, however cannot be directly applied to fast high-voltage pulsed power generation due to their limited operating voltage ratings despite their relatively long switching times. Therefore, they are used with voltage amplification and a pulse compression stage. This paper describes two pulse generators that use the semi-conductor switches and nonlinear capacitors: one is based on an opening switch (IGBT) and inductive energy storage, the other is a combination of a closing switch (RSD) and capacitive energy storage.