Thin film silicon alloys with enhanced stability made by PECVD and HWCVD for multibandgap solar cells
This paper presents the development of high deposition rate protocrystalline Si:H and /spl mu/c-Si:H as obtained by hot wire chemical vapor deposition (HWCVD, or catalytic CVD) and very high frequency plasma enhanced CVD (VHF PECVD) and protocrystalline SiGe:H as obtained by conventional PECVD. Using the latter two low bandgap materials as absorber layer, it is feasible to obtain stable devices showing virtually no light-induced changes in fill factor. We have obtained stable proto-SiGe:H cells using high H/sub 2/ dilution. A disadvantage, however, is the very low deposition rate for proto-SiGe:H (/spl sim/0.6 /spl Aring//s). By HWCVD, much higher deposition rates have been achieved for silicon-based thin films (both proto-Si:H and pc-Si:H). During the last few years, improved control of parameters is also obtained in HWCVD, which presently makes this method interesting for reducing the production cost of thin film solar cells. Recently, we have demonstrated that protocrystalline Si:H can be obtained from undiluted silane at 250 /spl deg/C in HWCVD at a high deposition rate of 1 nm/s. The light induced degradation in single junction n-i-p cells is less than 10%. Here, we also present for the first time p-i-n cells on commercial SnO/sub 2/:F with proto-Si intrinsic layers deposited at rates up to 3 nm/s, with again remarkable stability. Further, HWCVD microcrystalline materials with a crystalline fraction V/sub f/ of /spl sim/50% possess excellent electronic quality: the dangling bond density extracted from computer simulations, is only 2 /spl times/ 10/sub 15/ cm/sup -3/ and therefore we could obtain fill factors of 0.77 and 0.75 in dual-junction stacked /spl mu/c-Si:H//spl mu/c-Si:H cells, and proto-Si:H//spl mu/c-Si:H 'micromorph' n-i-p type solar cells, respectively. Both VHF PECVD /spl mu/c-Si:H made in the high pressure depletion regime and HWCVD /spl mu/c-Si:H have excellent potential for multibandgap solar cells.
On the lack of correlation between film properties and solar cell performance of amorphous silicon‐germanium alloys
We have studied the performance of amorphous silicon‐germanium alloy single‐junction solar cells both before and after light soaking. The intrinsic layers of the cells have different germanium contents. Films were grown on glass with parameters nominally identical to those for the intrinsic layer of the cells and the defect density was measured using the constant photocurrent method. We do not find good correlation between cell performance and the measured defect density for these high quality materials.
Integrated two-beam antenna array featuring dual-circular polarization
A concept of an integrated antenna array featuring two independent beams and dual circular polarization has been described. The antenna array consists of two radiating elements which are excited at two orthogonally placed feeding ports with the use of four appropriately connected 3-dB/90° directional couplers. Therefore, such an array generates two symmetrically located beams having right-handed circular polarization (RHCP) and identical two beams having left-handed circular polarization (LHCP). The presented concept has been verified by the design and measurements of an antenna array operating at 2.4 GHz frequency range.