Novel High voltage silicon-on-insulator Device with Composite dielectric buried Layer
A novel silicon-on-insulator (SOI) high voltage device with a composite dielectric buried layer (CD SOI) is proposed in this paper. In the proposed structure, the composite dielectric buried layer consists of Si 3 N 4 dielectric and low-k (relative permittivity) dielectric. The electric field strength in the buried layer is enhanced by the low-k dielectric. The Si 3 N 4 dielectric in the buried layer not only modulates the electric field distribution in the drift region, but also provides a heat conduction path for the SOI layer and alleviates the self-heating effect (SHE). The breakdown voltage (BV) = 362 V for CD SOI is obtained by simulation on a 1 μm SOI layer over 2 μm buried layer, which is enhanced by 26% compared with that of conventional SOI.
New High-Voltage ( $>$ 1200 V) MOSFET With the Charge Trenches on Partial SOI
A novel silicon-on-insulator (SOI) high-voltage MOSFET structure and its breakdown mechanism are presented in this paper. The structure is characterized by oxide trenches on the top interface of the buried oxide layer on partial SOI (TPSOI). Inversion charges located in the trenches enhance the electric field of the buried layer in the high-voltage blocking state, and a silicon window makes the depletion region spread into the substrate. Both of them modulate the electric field in the drift region; therefore, the breakdown voltage (BV) for a TPSOI LDMOS is greatly enhanced. Moreover, the Si window alleviates the self-heating effect. The influences of the structure parameters on device characteristics are analyzed for the proposed device structure. The TPSOI LDMOS with BV > 1200 V and the buried-layer electric field of EI > 700 V/ mum is obtained by the simulation on a 2-mum-thick SOI layer over 2-mum-thick buried oxide layer, and its maximal temperature reduces by 19 and 8.7 K in comparison with the conventional SOI and partial SOI devices.
Die wisselwerking tussen ekonomiese en konstitusionele hervormings in Suid‐Afrika
Abstract This article deals with the interplay between economic and constitutional reforms in South Africa. Historical and contemporary forces which obtain in these spheres are taken into consideration after which a number of conclusions are drawn.