In situ scanning tunneling microscopy of InAs quantum dots on GaAs( 0 0 1 ) during molecular beam epitaxial growth
Abstract Arrays of InAs quantum dots (QDs) have been studied using in situ scanning tunneling microscopy (STM) during their growth by molecular beam epitaxy on GaAs(0 0 1). At a substrate temperature of 400 °C under As 4 flux, both the QDs and the underlying step-terrace structure of the wetting layer (WL) are found to be static, with neither step-flow nor QD ripening observed. Higher resolution images of the mature WL show slightly different [1 1 0] periodicities to those observed in quenched STM studies.
Dynamics of ripening of self-assembled II-VI semiconductor quantum dots
We report the systematic investigation of ripening of CdSe self-assembled quantum dots (QDs) on ZnSe. We investigate the size and density of the QDs as a function of time after deposition of CdSe has stopped. The dynamics of the ripening process is interpreted in terms of the theory of Ostwald ripening. Furthermore, the experimental results allow us to identify the growth mode of the QD formation process. [S0031-9007(98)07378-5]
The wellness behavior interaction model
A cognitive-behavioral model for conceptualizing wellness is proposed consisting of situational/antecedent variables, person variables, and consequence variables which, taken individually or together, may serve to describe and explain wellness behavior. The model also is interactional in the sense that different categories of variables or factors within a category may impact on each other in a multidirectional fashion. A selective review of research relating to each variable is provided to demonstrate the need for such a multidimensional conceptual scheme for wellness.