A novel method for the measurement of diffusion lengths in solar cells
The minority carrier diffusion length in the base region of a solar cell is an important factor affecting the conversion efficiency and spectral response of the cell. Conventional methods for the measurement of minority carrier diffusion lengths in semiconductor materials are generally unsuitable for measurements on completed solar cells. This paper describes a simple and direct technique for the measurement of minority carrier diffusion length in solar cells, It has been applied to both single crystalline and polycrystalline silicon solar cells, and the results compared to standard surface photovoltage measurements.
XIII. Photovoltaic and Photoconductive Theory Applied to InSb
Equations are formulated for the distribution of photo-electrons and photo-holes in an intrinsic material. From the results for the photovoltaic effect it is shown that a value for the ambipolar di...
Minority Carrier Lifetime in p‐n Junction Devices
A relation between minority carrier lifetime and recovery time has been obtained for p‐n junction rectifiers of arbitrary base width. In the limiting cases of base width large or small compared to a diffusion length the recovery time is found to depend on the lifetime or on the transit across the base region, respectively. In intermediate cases, the recovery time is a function of both the lifetime and the transit time. Recovery time measurements on diffused junction silicon rectifiers as a junction of base width were found to be in satisfactory agreement with the theory.