Laser scanning of MOS IC's reveals internal logic states nondestructively
A laser scanning system has been used to observe the internal logic pattern in a MOS LSI device in a nondestructive manner. The laser scanner has also been used to selectively change logic states deep within the device. Pictures of the logic patterns revealed by the scanner are discussed.
LOGIC FAILUREANALYSIS OF CMOS VLSIUSINGA LASER PROBE
An improvedtechniquefor usinga focused laser beam to extract logical levels of internalIC transistorsin a non-contactand non-destructivemanner is introduced and described.Advances in the detection scheme coupled with computer control and signal processingallowautomatedoperation. Various tests were performed on CMOS microprocessorsto exemplifythe frequency, noise, and drift insensitivityof the detection scheme. These results will be presented,along with a discussion on the practical use of the techniqueand its extension for testing NMOS and bipolar technologies. - I 1940's , 1950's A 1960's 5 1970's 1980's , 1990's Time 'V
Avalanche Effects in Silicon p—n Junctions. I. Localized Photomultiplication Studies on Microplasmas
An improved experimental technique is described for the investigation of carrier multiplication in very small areas, particularly microplasmas. A light spot of a few microns diameter is positioned to cover a microplasma of comparable or smaller size and the multiplied photocurrent is measured as a function of reverse voltage.When the size of the microplasma is much smaller than the light spot, then the multiplication as a function of voltage is dependent upon the characteristics of the microplasma in an upper voltage range just below the microplasma breakdown voltage. In a lower voltage range the microplasma has negligible effect on multiplication. By comparing for the upper and lower voltage ranges the behavior of the reciprocal of the multiplication factor as a function of voltage, it is possible to determine that the diameters of the area of the microplasma regions vary from less than one to more than 5 μ.Multiplication factors as high as 106 were measured. At high multiplication (M>100), a deviation f...