Design, Fabrication, and Testing of a Modular Magnetic Field Microsensor on a Flexible Polymer Foil
In contrast to existing microelectromechanical systems (MEMS), this paper describes the development, fabrication, and testing of an anisotropic magnetoresistance (AMR) microsensor using a 7 μm thick polymer foil as substrate material. The modular magnetic field micro sensors are fabricated on a standard 4 in Si Wafer due to handling purposes during the sensor fabrication process. To enable a release of the micro sensors at the end of the fabrication process, initial investigations concentrated on the proof of principle applying a deep reactive-ion etching (DRIE) process to structure the Si wafer. The DRIE process was used to structure Si frames, which serve as carriers for the modular magnetic field micro sensors. For the evaluation of the fabricated modular magnetic field micro sensors, electrical resistance measurements were accomplished. The aim of these investigations was the characterization of the magnetic field dependence of the electrical resistance. The electrical output signal of the AMR sensors were subsequently compared to electrical resistance measurements of AMR sensors fabricated on a Si substrate and served as reference. The measurement results show a marginal effect of the substrate material on the characteristics of the AMR sensors.
Multi-Physical Models of Bending Characteristics on the Double-Clamped Beam Switch for Flexible Electronic Devices Application
In this paper, multi-physical models of bending characteristics, including the static, dynamic and microwave models, are firstly proposed for the double-clamped beam switch based on flexible substrate. Both simulated and experimental verification have been carried out to prove that the changing regularity of the driving voltage and time of the switch is inversely proportional with the increase in the bending curvature of the flexible substrate. The microwave performance of the switch at the ON state is found to get worse with the increase in the bending curvature. The measured results indicate that when the bending curvature increases from 0 m−1 to 28.6 m−1, the measured driving voltage decreases from 90.0 V to 72.6 V with the error of 5.9% compared with the calculated results. The measured driving time decreases from 52.4 μs to 35.6 μs with the error of 16.7% compared with the calculated results. When the substrate bending curvature increases from 0 m−1 to 28.6 m−1, the measured reflection loss S11 of the switch gradually deteriorates from −27.1 dB to −22.0 dB with the error of 1.3 dB corresponding to the calculated results at 10 GHz. All the simulated and experimental results are consistent with the theoretical calculated results.
Rotational Analysis of the CrO Bands
The (0, 1), (0, 0) and (1, 0) bands of the CrO, which appear in the red and yellow region, are analysed rotationally, and we have been able to show that these bands owe to the transition 5 Π- 5 Π. We have shown the theoretical formulae for the quintet state, which can be applied in the case of nearly (a), and obtained the molecular constants as follows,