A Planar CMOS Field-Emission Vacuum Magnetic Sensor
We have fabricated a CMOS vacuum magnetic sensor that exploits the deflection of an electron beam produced by field emission by a perpendicular magnetic field. The device is planar and fabricated by conventional lithography and etching processes. An extremely high magnetic field sensitivity of 4times103%/T is reported.
Fabrication of a vacuum-sealed magnetic sensor with a Si field emitter tip
A vacuum-sealed magnetic sensor was fabricated. The sensor consists of a cone-shaped silicon field emitter tip mounted on a TO-5 IC header and bonded to a glass package with epoxy resin. This sensor detects the displacement of an electron beam in the anode caused by the Lorentz force deflection effect, and thus measures the magnetic flux strength. The estimated sensitivity of the sensor was as high as 7×103% T-1 below 10 mT.
Fabrication of Si Field Emitter Tip for a Three-Dimensional Vacuum Magnetic Sensor
A new Si field emitter tip generating a cross-shaped electron beam was fabricated for a three-dimensional vacuum magnetic sensor (VMS) application. The present tip is surrounded by a gate for field emission, and a focusing lens is made in the same plane as the gate. The beam current of about 50 nA was obtained with a single tip at the gate and lens voltages of 55 V and 10 V, respectively. The fabrication process and beam characteristics are described. Preliminary results such as linearity and sensitivity of VMS using the present tip are also discussed.