Patterning issues for the fabrication of sub-micron memory capacitors' electrodes
This paper describes some of the key issues associated with the patterning of metal electrodes of sub-micron (especially at the critical dimension (CD) of 0.15 μm) dynamic random access memory devices. Due to reactive ion etching lag, the Pt etch rate decreased drastically below the CD of 0.20 μm and thus K-th storage node electrode with the CD of 0.15 μm could not be fabricated using the Pt electrodes. Accordingly, we have proposed novel techniques to surmountly-the above difficulties. The Ru electrode cannot for the stack-type structure is introduced and alternative multischemes based on the introduction of the concave-type selfstructure upto using semi-Pt or Ru as an electrode material are outlined respectively.
High-rate Ru electrode etching using O 2 /Cl 2 inductively coupled plasma
We have studied the characteristics of Ru etching using O2/Cl2 plasmas in an inductively coupled plasma (ICP) etcher. The changes of Ru etch rates and Ru electrode etching slopes by varying Cl2/(O2 + Cl2) gas flow ratio, total flow rate, source power, bias power, and pressure were investigated. A high Ru etch rate of > 1400 A/min with a high etching slope of > 85° was demonstrated using 0.15 µm critical dimension (CD) patterned wafers. The mechanism of high-rate Ru etching is studied.
SR topography of plastically deformed Fe-Si bicrystals - observation in situ and post mortem
SR reflection topography was applied to study the interaction of slip dislocations with the grain boundaries in Fe-4at%Si bicrystals deformed by compression. Three experimental settings with either a white or monochromatic beam were used and the corresponding orientation contrast analysed. Dislocation transmission through the grain boundary was observed in bicrystals with favourable geometry of the slip systems.