Hera-b 98{206 Software 98{026 Ranger { a Pattern Recognition Algorithm for the Hera-b Main Tracking System Part Iii: Tracking in the Trigger Chambers
A tracking algorithm based on the Concurrent Track Evolution method has been developed to propagate track candidates which have been found in the main tracking system between vertex detector and RICH into the \trigger chamber" area between RICH and electromagnetic calorimeter. The performance of the method is tested on HERA-B Monte Carlo events with full detector simulation and in the framework of the current software environment.
Ranger - a Pattern Recognition Algorithm for the HERA-B Main Tracking System: Part IV: The Object-Or
A rigorous track tting procedure for the HERA-B spectrometer is presented. The method is capable of dealing with a variety of detector types. Corrections for multiple scattering, ionization energy loss and radiation of bremsstrahlung for e are incorporated. The interaction time can be determined for tracks passing drift chambers by introducing an additional parameter into the t. The algorithm has been implemented in C++ using object-oriented techniques. The performance of the method is tested using simulated tracks in the standard HERA-B software environment.
Selective etching of InP in NaF solution
Abstract The crossing porous structure of InP has been obtained by electrochemical etching in NaF solutions. The behavior of the periodic oscillation occurs at different potential ranges for the different concentrations of solutions, and it will disappear with the concentration of the solution decreased. The scanning electron microscope (SEM) image shows that the pores have two directions on the surface and are perpendicular to each other. The two directions are assigned to [0 1 1] and [ 0 1 ¯ 1 ], respectively. The SEM image of the cross-section also shows that the two directions are assigned to [1 1 1]B and [ 1 1 ¯ 1 ¯ ]B. Both are due to the selective etching of F− ions. The crossing porous structure of InP is a very promising feature for the three-dimensional structure of III–V compound semiconductors for photonic band gap materials.