Review of Recent Development in Deep Drawing Process
Deep drawing is a common metal forming process used to manufacture recessed threedimensional parts from flat sheet metals. The research in deep drawing has been generic over the last few decades and various aspects of this process have been investigated. The paper aims to review the following aspects of deep drawing process that affect the quality of the product, tooling life and process design: i. The development of a theoretical model for the isoviscous hydrodynamic lubrication of deep drawing and its comparison with experimental results, the effect of lubrication on die expansion that could be used as an indirect means of detecting and measuring the presence of a hydrodynamic lubricant film thickness. ii. The improvement in deep drawing tooling that covers analysis for the blank holder, the effect of punch geometry on the deep drawing process, and introducing an alternative tooling materials for batch production. iii. The recent developments and future direction of research.
Isoviscous Hydrodynamic Lubrication of Deep Drawing and Its Comparison With Experiment
An analytical model for the isoviscous hydrodynamic lubrication of deep drawing is developed. The model covers the complete drawing stages from sheet metal blank to the drawn cup-shaped product. Equations to calculate the film thickness, radial, and drawing stresses related to the blank holder squeezing action are presented. Theoretical predictions of both film thickness and drawing force ratio for lubricated, low carbon steel are compared with experimental measurements
Bevel RIE application to reduce defectivity in copper BEOL processing
Bevel etch used during wafer fabrication for semiconductor devices is discussed. In this case, the bevel etch process was utilized in middle of the line processing (MOL) to reduce back end of line (BEOL) defectivity. Tungsten and titanium nitride films, from the formation of contacts to the transistors, extend into the bevel region of the wafer and have been shown to initiate arcing. This can spread foreign material defects on the front side of the wafer in various BEOL post processing steps including subsequent reactive ion etching, SEM metrology and film depositions. The bevel etch tool confines a plasma etch to the outer edge of the front side of the wafer (which can be individually adjusted) and can remove dielectric, organic and Ti/TiN/W films using a fluorine based chemistry.