Laser ablation of nanoscale particles with 193 nm light
Laser interaction with nanoscale particles is distinct and different from laser-bulk material interaction, where a hot plasma is normally created. Here, we review our studies on 193 nm laser ablation of various nanoscale particles including NaCl, soot, polystyrene, and gold. The 20 ns laser beam with fluences up to 0.3 J/cm 2 irradiates nanoparticles in a gas stream at laser repetition rates from 10 to 100 Hz. The particle size distributions before and after irradiation are measured with a scanning mobility particle sizer (SMPS), and particle morphology is examined with electron microscopy. All the nanomaterials studied exhibit a similar disintegration pattern and similar particle formation characteristics. No broadband emission associated with particle heating or optical breakdown is observed. The nanoparticles formed after irradiation have a smaller mean diameter and an order of magnitude higher number concentration with a more spherical shape compared to the original particles. We use the photon-atom ratio (PAR) to interpret the laser-particle interaction energetics.
Photochemical interaction of polystyrene nanospheres with 193 nm pulsed laser light.
The photochemical interaction of 193 nm light with polystyrene nanospheres is used to produce particles with a controlled size and morphology. Laser fluences from 0 to 0.14 J/cm2 at 10 and 50 Hz photofragment nearly monodisperse 110 nm spherical polystyrene particles. The size distributions before and after irradiation are measured with a scanning mobility particle sizer (SMPS), and the morphology of the irradiated particles is examined with a transmission electron microscope (TEM). The results show that the irradiated particles have a smaller mean diameter ( approximately 25 nm) and a number concentration more than an order of magnitude higher than nonirradiated particles. The particles are formed by nucleation of gas-phase species produced by photolytic decomposition of nanospheres. A nondimensional parameter, the photon-to-atom ratio (PAR), is used to interpret the laser-particle interaction energetics.
Anomalous Annealing Behavior of Arsenic Implanted Silicon as a Function of Dose and Energy
Anomalous annealing behavior of damage in As implanted Si has been investigated by channeling effect measurements. Room temperature As implants with doses from 1014 to 2 × 1016cm-2 at energies ranging from 50 to 250 keV into Si were annealed over the range of 600°C to 1100°C. Anneal temperatures ≥ 950°C reduce the disorder for ion doses of 0.5 to 1 × 1016 cm-2 at energies between 50 and 250 keV. Anomalously high residual disorder was found for the intermediate doses of 2 × 1014 to 2 × 10/cm2 implanted above 100 keV. For this intermediate dose, annealing of implants performed at liquid nitrogen temperatures did not show significant reduction in this damage. However implants at 200° to 300°C indicate a lower amount of damage compared to the room temperature implants.