Comparative study of tri-gate flash memories with split and stack gates
The functional tri-gate flash memories with splitgate have been demonstrated for the first time, and its Vt variabilities before and after one P/E cycle have be systimetically compared with stack-gate ones. It was confirmed that split-gate shows smaller Vt distribution after erase and excellent over-erase immunity compared to those of stack-gate. Moreover, it was found that BVDS is higher than 3.2 V even Lgc was down to 76 nm. This indictes that tri-gate is useful for scaled NOR flash.
A simple and efficient self-limiting erase scheme for high performance split-gate flash memory cells
This paper presents a fast self-limiting erase scheme for split-gate flash EEPROMs. In this technique the conventional erasing is rapidly followed by an efficient soft programming to correct for over-erase within the given voltage pulsewidth. The typical erasing time is about 400 ms and the final erased threshold voltage is accurately controlled via the base level read mode voltage within 0.3 V. The proposed scheme can he used for high throughput erasing in low voltage, high density, multilevel operation split-gate flash memory cells.
Concentration of amino acids in wine after the end of fermentation by Saccharomyces cerevisiae strains
Both quantitative and qualitative differences in the utilization and release of assimilable nitrogen by two wine strains of Saccharomyces cerevisiae (cerevisiae and capensis) under different conditions of oxygen were observed. These differences were influenced by the presence of oxygen at the beginning of the fermentation, and by the strain of S cerevisiae. The release of some amino acids post-fermentation may be the result of reoxidation of NAD(P)H in order to maintain a normal redox balance. Copyright © 2003 Society of Chemical Industry