Application of Spectral Density of Transitions in Semiconductor Laser Theory
In this paper the formulas for spectral speed of an emission, for gain, for spectral - volume energy density of spontaneous radiation, for modulation of spontaneous radiation output power spectrum near to a threshold, based on formula for spectral density of transitions, are derived. The contrast modulation index mk was defined; using of mk determines more split-hair accuracy of definition |thetas| from experimental data.
Measurement of the modal reflectivity of an antireflection coating on a superluminescent diode
A method for measuring the modal reflectivity of the antireflection coating applied to a laser diode is described and demonstrated. It is based on measurements of the Fabry-Perot modulation depth of the resulting superluminescent diode (SLD) output spectrum at the threshold current of the original laser. A modal reflectivity of less than2 \times 10^{-4}has been obtained.
Injected Carrier Lifetime and Aging of GaAs Injection Lasers
Aging experiments of Zn‐diffused GaAs injection lasers have been performed at liquid‐nitrogen temperature. Results of degradation tests are consistent with the Kressel and Byer postulation that new nonradiative recombination centers are formed. Evidence of the formation of these new centers are deduced from measurements of the injected carrier lifetime which decreases during laser degradation. Variations of the external quantum efficiency and the threshold current correlate with the changes of the carrier lifetime.