Irradiated cubic single crystal SiC as a high temperature sensor
Radiation is known to cause point defects formation in different materials. In the case of cubic SiC single crystal radiation flux on the order of 2⋅10 20 neutrons/cm 2 at 0.18 MeV causes over 3% volume lattice expansion. Radiation-induced strain (measurable by X-Ray diffraction) can be relieved when the annealing temperature exceeds the temperature of irradiation. Based on this effect the original technology of maximum temperature measurement was developed a while ago. Single crystal SiC sensor small size (200-500 microns), wide temperature range (150-1450 °C), “no-lead” installation, and exceptional accuracy make it very attractive for use in small, rotating and “hard-to-access” parts, including, but not limited to gas turbine blades, space shuttle ceramic tiles, automobile engines, etc. With the advances in X-Ray diffraction measurements, crystal and thin film growth techniques, it is the time to revise and update this technology. Modeling radiation damage, as well as annealing effects are also beneficial.
One-dimensional nano layered SiC/TiO2 based photonic band gap materials as temperature sensor
Abstract In this present paper, we have proposed a novel design of temperature sensor using 1-dimensional photonic band gap materials, which is made by alternate layers of TiO2 and silicon carbide (4H–SiC) with periodic variation of their respective thickness and refractive indices. We have investigated the reflection properties, relative band width behaviour and group velocity of the proposed photonic band gap materials at different temperature. The refractive index of SiC is temperature dependent, so by increasing the temperature the number of forbidden bands as well as width of the forbidden bands increases and the value of group velocity decreases. Thus, by analysing the band gap width, number of forbidden bands, and group velocity, it is easy to calculate the value of temperature of the given environment. This paper is focused on what we regard the latest development in the use of photonic band gap materials in photonic devices, a strong importance with the application in communication. It may be used as a temperature sensor. Our results show the potential application in temperature controlled optoelectronic devices.
Evaluation of Impact of Yarn Count and Stitch Length on Pilling, Abrasion, Shrinkage and Tightness Factor of 1 ? 1 Rib Cotton Knitted Fabrics
This study investigates the impact of yarn count and stitch length of 100% cotton knitted fabrics. 1 × 1 ribs structured fabrics were used in this research work. The stitch length 2.50 mm, 2.52 mm, 2.60 mm, 2.70 mm, 2.80 mm and 2.96 mm were used of the yarn count of 26Ne, 28Ne and 36Ne. The areal densities of the grey fabrics were in various amounts. The impacts of yarn count and stitch length were measured concerning pilling resistance, abrasion resistance, and shrinkage and tightness factor. The result showed that the fabric pilling grade decreased while number of cycle increased. Abrasion resistance decreased but length wise shrinkage increased despite the fact that the stitch length increased. The results also exposed that the tightness factor of the fabric increased with the increase of the stitch length in both dyeing and washing state and finished state compared to grey state for the yarn count 26Ne and homogeneous result not found for yarn count 28Ne and 36 Ne. Evaluation of Impact of Yarn Count and Stitch Length on Pilling, Abrasion, Shrinkage and Tightness Factor of 1 × 1 Rib Cotton Knitted Fabrics