Uniform performance of high-efficiency room-temperature GaInAsSb/GaSb photodiodes for 1.75 < lambda < 2.2 mum.
A group of 126 experimental, packaged, backilluminated, 1.75-2.2-microm wavelength, GaInAsSb mesa (~85-microm diameter) photodetectors have been assembled and evaluated. Average room-temperature properties were peak quantum efficiency, 86%; zero-bias capacitance, 3.9 pF; dark current at -0.5-V bias, 7.4 microA.
cw operation of GaInAsSb/AlGaAsSb lasers up to 190 K
Continuous operation of 2.1 μm wavelength Ga0.84In0.16As0.15Sb0.85 /Al0.27Ga0.73As0.04Sb0.96 double heterostructure injection lasers has been achieved up to a temperature of 190 K for the first time. The laser wafers were grown by liquid phase epitaxy. In pulsed operation, broad area devices with active layer thicknesses of 0.8–1.0 μm exhibited room‐temperature threshold current densities as low as 7 kA/cm2.
Liquid phase epitaxial growth of AlGaSb
Abstract Optimum conditions for the liquid phase epitaxial growth of AlGaSb and for the heat treatment of substrates were investigated. The high-temperature heat treatment of GaSb substrates prior to growth was found to damage the surface of the substrates, resulting in poor interfacial properties and formation of Ga inclusions. A “Dipped and Double Substrate” method is proposed to improve this situation. By this method, AlGaSb with good interfacial properties can be grown with good reproducibility. The optimum bakeout condition of the melt was found to be 24 h at 700°C. Photoluminescence spectra suggest that the residual acceptors are not only due to antimony vacancies but also due to such residual impurities as silicon. From laser Raman spectra, LO phonons are shown to couple with plasmons in AlGaSb when the background carrier concentration is as high as 10 17 /cm 3 .