High k/III-V structures: Interfaces, oxides quality and down scaling
In this paper, we present our studies on high k/InGaAs and high k/InSb structures, focusing on the interfaces, oxides qualities as well as down scaling the gate oxide. We indicate the free movement of Fermi level in both kinds of n- and p-InGaAs MOSCAPs. The effect of gases plasma treatments in the improvement of gate oxides as well as high k/InGaAs interface quality is also discussed. For high k/InSb structure, the effect of post deposition annealing temperatures on electrical properties of this structure is presented. Finally, we present our efforts on down scaling the equivalent oxide thickness of these structures into sub-nm size.
The influences of surface treatment and gas annealing conditions on the inversion behaviors of the atomic-layer-deposition Al2O3/n-In0.53Ga0.47As metal-oxide-semiconductor capacitor
The inversion behaviors of atomic-layer-deposition Al2O3/n-In0.53Ga0.47As metal-oxide-semiconductor capacitors are studied by various surface treatments and postdeposition annealing using different gases. By using the combination of wet sulfide and dry trimethyl aluminum surface treatment along with pure hydrogen annealing, a strong inversion capacitance-voltage (C-V) response is observed, indicating a remarkable reduction in interface trap state density (Dit) at lower half-part of In0.53Ga0.47As band gap. This low Dit was confirmed by the temperature independent C-V stretch-out and horizontal C-V curves. The x-ray photoelectron spectroscopy spectra further confirm the effectiveness of hydrogen annealing on the reduction of native oxides.
Comparison of drive currents in metal-oxide-semiconductor field-effect transistors made of Si, Ge, GaAs, InGaAs, and InAs channels
In this study, the effect of using high-electron-mobility channel materials, such as GaAs, InAs, and InGaAs, on drive current in n-channel metal-oxide-semiconductor (nMOS) and p-channel metal-oxide-semiconductor devices is studied. Relative to silicon, these materials have lower electron effective mass, which leads to lower inversion capacitance (Cinv) due to their lower density of states. Despite their lower Cinv, high-electron mobility channel materials are shown to be promising alternatives to silicon in delivering higher drive current in nMOS devices.