Investigation of doping profile effect on characteristics of ion-implanted GaAs MESFET
Ion-implanted GaAs MESFET was modeled and dependence of MESFET characteristics on doping profile parameters was found. Dependence of transistors characteristics on doping profile parameters variation was investigated.
Impurities and doping influence on characteristics of GaAs field effect transistor with Schottky barrier
In this work ion-implanted MESFET was modeled and its characteristics dependence from substrate was found. Concentrations of deep and shallow centers in substrate were found.
A limitation on frequency of Gunn effect due to the intervalley scattering time
A limitation on frequency of Gunn effect associated with the relaxation time for intervalley scattering of electrons in a small-signal approximation is described. The upper limit frequency is higher than the limit frequency associated with each relaxation time and increases with an electric field.