A simple derivation of field-effect transistor characteristics
In the conventional treatment of the field effect 
transistor, the first step is the specification 
of an impurity profile that describes the 
nature of the gate-channel contact. Solutions 
for the static and small-signal characteristics 
are then valid only for the particular 
impurity profile chosen, and must be repeated 
from the beginning for different 
structures. 
 
The purpose of this communication is to 
present a simple, though approximate, 
development of the characteristics of an 
FET without specifying the detailed nature 
of the structure. The charge-control approach is used, and it is shown that in the pinch-off region the relation between the drain current and the gate-source voltage is 
approximately square law. The results are 
applicable to all gate-channel structures, 
including the insulated gate types.
Static large-signal field-effect transistor models
A series of static large-signal field-effect transistor (FET) models are presented which consist of familiar circuit building blocks plus a new nonlinear element, the ideal field-effect diode. The models present a unified form for all types of FET's, and generate the complete set of static FET characteristics, including inverted operation.
Proposed beam diagnostics instrumentation for the LANSCE refurbishment project
Presently, the Los Alamos National Laboratory is in the process of planning a refurbishment of various subsystems within its Los Alamos Neutron Science Center accelerator facility. A part of this LANSCE facility refurbishment will include some replacement of and improvement to existing older beam-diagnostics instrumentation. While plans are still being discussed, some instrumentation that is under improvement or replacement consideration are beam phase and position measurements within the 805-MHz side-coupled cavity linac, slow wire profile measurements, typically known as wire scanners, and possibly additional installation of fast ionization-chamber loss monitors. This paper will briefly describe the requirements for these beam measurements, what we have done thus far to answer these requirements, and some of the technical issues related to the implementation of the instrumentation.