Crystalline Si solar cells fabricated by CO2 laser doping
We proposed CO<sub>2</sub> laser doping technique as a fabrication method of c-Si solar cell, and demonstrated its availabilities with the cell characteristics. P and B-doping with relatively high carrier density around 10<sup>20</sup> cm<sup>-3</sup> were realized by the CO<sub>2</sub> laser irradiation. We found that the pulse frequency is one of the most important parameter to improve the cell performances.
22.0% Efficient Laser Doped back Contact Solar Cells
Abstract We present the first laser doped interdigitated back contacted solar cells with efficiency η = 22.0%. The cell area is 2 x 2 cm 2 , and contains the metallization of both busbars. The high flexibility and spatial resolution of our laser doping process enables local n-type and p-type doping with a precision below 30 μm and avoids any masking process.
Analysis of Dopant Diffusion in Molten Silicon Induced by a Pulsed Excimer Laser
Dopant diffusion calculations explain well the mechanism of the non-equilibrium incorporation of boron from the silicon surface into the molten silicon induced by a pulsed excimer laser. When a high-power laser causes the melt front to proceed into the substrate faster than 8 m/s, p+ doped regions are formed only near the surface of the molten region because dopant atoms cannot diffuse sufficiently fast for the junction depth to reach the maximum melt depth.