Large-grain polycrystalline silicon films with low intragranular defect density by low-temperature solid-phase crystallization without underlying oxide
The solid-phase crystallization of an amorphous silicon film to polycrystalline silicon by a low-temperature (⩽600 °C) furnace anneal has been investigated in a suspended cantilever structure without underlying silicon oxide by transmission electron microscopy and Raman spectroscopy. The grain size of polysilicon increases up to ∼3.0 μm and the density of intragranular defects decreases one order of magnitude in the samples without underlying oxide, compared with those with underlying oxide. The main reasons for the high quality of the suspended structures are thought to be due to the lower stress in the films during crystallization and a reduced grain nucleation rate.
Characterization of roughness and defects at an Si/SiO2 interface formed by lateral solid phase epitaxy using high-resolution electron microscopy
Using high‐resolution transmission electron microscopy, we have characterized on an atomic scale the interfacial roughness and the interfacial defects at the Si/SiO2 interface obtained by lateral solid phase epitaxial growth of Si on SiO2. At the matrix/SiO2 interface, the protrusions of Si with 2–3 Si(200) lattice planes make the interface indented. These images can be explained by the pyramid‐type or edge‐type pseudo Si(100)/SiO2 interface models composed of small {111} facets. Defects, mainly microtwins, are localized only within 50 nm from the interface, and are adjacent to the SiO2. It indicates that microtwins are interface‐related and are supposed to form from atomic scale indents of the original a‐Si/SiO2 interface.
Evaluation of CuAl2O4 as an Oxygen Carrier in Chemical-Looping Combustion
The chemical-looping combustion (CLC) process is a novel solution for efficient combustion with intrinsic separation of carbon dioxide. The process uses a metal oxide as an oxygen carrier to transfer oxygen from an air to a fuel reactor where the fuel, or gasification products of the fuel, reacts with the solid oxygen carrier. In this work, copper(II) aluminate (CuAl2O4) was assessed as a potential oxygen carrier using methane as fuel. The carrier particles were produced by freeze–granulation and calcined at 1050 °C for a duration of 6 h. The chemical-looping characteristics were evaluated in a laboratory-scale fluidized-bed reactor in the temperature range of 900–950 °C during 45 alternating redox cycles. The oxygen carrier exhibited reproducible and stable reactivity behavior in this temperature range. Neither agglomeration nor defluidization was noticed in any of the cycles carried out at 900–925 °C. However, after reactivity tests at 950 °C, soft agglomeration and particle fragmentation were observed. Systematic phase analysis of the Cu–Al–O system during the redox cycle was carried out as a function of duration of reduction and oxygen concentration during the oxidation period. It was found that the CuAl2O4 is reduced to copper(I) aluminate (CuAlO2; delafossite), Cu2O, and elemental Cu. The CuAlO2 phase is characterized by slow kinetics for oxidation into CuO and CuAl2O4. Despite this kinetic limitation, complete conversion of methane with reproducible reactivity of the oxygen carrier is achieved. Thus, CuAl2O4 could be a potential oxygen carrier for chemical-looping combustion.