A Dependence of Crystallinity of In2O3 Thin Films by a Two-Step Heat Treatment of Indium Films on the Heating Atmosphere
A difference in crystallinity of In2O3 thin films on sapphire substrates by heat treatment of indium films was reported. Indium films were heated in an inert atmosphere or in air until they reached a specified temperature and then oxidized in air at much higher temperatures. Crystallinity of the In2O3 thin film which was heat-treated in air from room temperature was quite poor. On the other hand, narrow X-ray rocking curves of the In2O3 films were obtained when the temperature was increased in an inert atmosphere to a specified tem-perature.
Optical properties of In2O3 oxidized from InN deposited by reactive magnetron sputtering
Abstract Unintentionally doped and zinc-doped indium nitride (U-InN and InN:Zn) films were deposited on (0 0 0 1) sapphire substrates by radio-frequency reactive magnetron sputtering, and all samples were then treated by annealing to form In2O3 films. U-InN and InN:Zn films have similar photon absorption characteristics. The as-deposited U-InN and InN:Zn film show the absorption edge, ∼1.8–1.9 eV. After the annealing process at 500 °C for 20 min, the absorption coefficient at the visible range apparently decreases, and the absorption edge is about 3.5 eV. Two emission peaks at 3.342 eV (371 nm) and 3.238 eV (383 nm) in the 20 K photoluminescence (PL) spectrum of In2O3:Zn films were identified as the free-exciton (FE) or the near band-to-band (B–B) and conduction-band-to-acceptor (C–A) recombination, respectively.
Anomalous Annealing Behavior of Arsenic Implanted Silicon as a Function of Dose and Energy
Anomalous annealing behavior of damage in As implanted Si has been investigated by channeling effect measurements. Room temperature As implants with doses from 1014 to 2 × 1016cm-2 at energies ranging from 50 to 250 keV into Si were annealed over the range of 600°C to 1100°C. Anneal temperatures ≥ 950°C reduce the disorder for ion doses of 0.5 to 1 × 1016 cm-2 at energies between 50 and 250 keV. Anomalously high residual disorder was found for the intermediate doses of 2 × 1014 to 2 × 10/cm2 implanted above 100 keV. For this intermediate dose, annealing of implants performed at liquid nitrogen temperatures did not show significant reduction in this damage. However implants at 200° to 300°C indicate a lower amount of damage compared to the room temperature implants.