The accounting of the simultaneous exposure of the low temperatures and the penetrating radiation at the circuit simulation of the BiJFET analog interfaces of the sensors
The article considers a choice of CAD system and SPICE-models for the circuit simulation of characteristics of the bipolar (BiJFET) analog integrated circuits (IC) at the exposure of the penetrating radiation (PR) and the low temperatures. The authors suggest a modified SPICE-model, which describes the nonmonotonic change of the peak drain current and the slope of the p-n junction FET (JFET) within the temperature range from −200°C to 30°C.
Preamplifiers for room temperature and cryogenic calorimetry applications based on DMILL technology
Abstract This paper discusses the results obtained with charge sensitive preamplifiers employing a large input device and suitable for room temperature as well as cryogenic calorimetry applications. The preamplifiers have been realised in DMILL technology, a process where all devices are on an insulating layer. Two preamplifier configurations are illustrated here. One of them is entirely based on P-channel JFETs, the other one employs PJFETs and NMOS. In both cases the input device is a PJFET with 1.2 μm gate length, a device which was proven to feature outstanding noise performances.
An integrated circuit for silicon photomultipliers tubes
A two-channel integrated circuit for processing current pulses of silicon photomultiplier is based on an АБМК-1.3 analog basic array. Each channel of the integrated circuit contains a transresistance amplifier with a maximal conversion coefficient of about 5 mV/μA, regulated in a −70 dB range, and a discriminator with a threshold changeable within ±500 mV. The circuit designs of separate stages of the integrated circuit and experimental characteristics are given.