The Rhine Crisis of 1840 and German Nationalism: Chauvinism, Skepticism, and Regional Reception*
The Rhine Crisis began with French imperialism. Aiming to expand its influence to Egypt and the Levant, France lent its support in 1839 to Mehmet Ali, Egypt’s pasha, whose ambition to seek hereditary rule in Egypt and Syria challenged Ottoman suzerainty. After Egyptian-led troops pushed theOttoman army beyond Syria’s border in April 1839, Adolphe Thiers, the French president, envisioned a new sphere of influence in the Orient. He thus played with the fragile equilibrium of the Eastern Question, Western diplomacy’s contest to fill the power vacuum of a reduced Ottoman Empire. The démarche stalled, however, during the opening months of 1840, culminating in dramatic failure on July 15with the London Convention: a four-power treaty ðwithout the consultation of FranceÞ that supported the sultan’s retention of his imperial territories. Isolated and humiliated by this diplomatic loss, Thiers’s government and the Chamber of Deputies sought an honorable retreat through compensation elsewhere and therefore reasserted the claim that France’s frontier extended to the Rhine. The French state thus compounded a diplomatic setback with a political dispute over “natural borders.” In
Italy during the Rhine Crisis of 1840
The paper addresses the impact of the Rhine Crisis of 1840 on Italian countries and explains the role they played in the European State System when the Continent seemed to be on the eve of a general war. As the paper attempts to prove, the crisis seriously alarmed the ruling classes as well as the general public and revealed the internal problems of the Italian countries as well as their deep distrust towards the egotistic and self-serving policies of the Great Powers. The paper therefore introduces the history of Italy during late 1840 within the wider context of European diplomatic history and serves as a probe into the history of the European State System during the Pre-March period in general.
Anomalous Annealing Behavior of Arsenic Implanted Silicon as a Function of Dose and Energy
Anomalous annealing behavior of damage in As implanted Si has been investigated by channeling effect measurements. Room temperature As implants with doses from 1014 to 2 × 1016cm-2 at energies ranging from 50 to 250 keV into Si were annealed over the range of 600°C to 1100°C. Anneal temperatures ≥ 950°C reduce the disorder for ion doses of 0.5 to 1 × 1016 cm-2 at energies between 50 and 250 keV. Anomalously high residual disorder was found for the intermediate doses of 2 × 1014 to 2 × 10/cm2 implanted above 100 keV. For this intermediate dose, annealing of implants performed at liquid nitrogen temperatures did not show significant reduction in this damage. However implants at 200° to 300°C indicate a lower amount of damage compared to the room temperature implants.