Study on the EMD Processing Method of Cylinder with Multiple Diagonal Slits
Aiming at complex shape of cylinder with multiple diagonal slits and difficult to processing using traditional processing method. the paper adopt two methods of EMD shaping and trajectory to processing slits of cylinder with multiple diagonal slits. Compared the processing quality of two processing method by the following aspects, such as the electrode material and fabrication technology, the level of difficulty with control of slits processing and Factors determine the accuracy of slits and so on. As can be seen from the comparison, for EDM forming method, processing electrode complex and inconvenient, but the process is simple relatively, have no use for complicated electrical control. For EDM trajectory method, processing electrode is simple and convenient, but the process is complicated relatively. It can process slits closer to the ideal shape through the establishment of a precise trajectory equation and using complicated electrical control.
Ultrasonic Rotary Motor Using a Longitudinal-Torsional Vibration Converter
Characteristics of ultrasonic rotary motors using a converter from longitudinal vibration to torsional one are studied. The longitudinal-tortional vibration converter consists of (1) cylindrically arranged thin rods bent at a longitudinal node part, (2) a cylinder with a diagonally slitted vibration converting part, (3) a slitted converting disk and cylindrical parts joined with a bolt. Ultrasonic motors consist of such a converter mentioned above with a driving part at its free edge and a rotor part clamped statically to a driving surface with corned disk springs. Maximum torque over 80 kgf·cm is obtained using the converter of 40 mm diameter.
Selective etching of InP in NaF solution
Abstract The crossing porous structure of InP has been obtained by electrochemical etching in NaF solutions. The behavior of the periodic oscillation occurs at different potential ranges for the different concentrations of solutions, and it will disappear with the concentration of the solution decreased. The scanning electron microscope (SEM) image shows that the pores have two directions on the surface and are perpendicular to each other. The two directions are assigned to [0 1 1] and [ 0 1 ¯ 1 ], respectively. The SEM image of the cross-section also shows that the two directions are assigned to [1 1 1]B and [ 1 1 ¯ 1 ¯ ]B. Both are due to the selective etching of F− ions. The crossing porous structure of InP is a very promising feature for the three-dimensional structure of III–V compound semiconductors for photonic band gap materials.