Tailoring the dynamics of multisection lasers for 40 Gb/s direct modulation
We demonstrate theoretically how a proper tailoring of the longitudinal structure of multisection semiconductor laser help to achieve the required device performance when modulating current with 40 Gbit/s PRBS signal. For this reason we simulate and analyze the longitudinal dynamics with the software package LDSL-tool.
Improvement of the direct modulation behavior of semiconductor lasers by using a holding beam
We show theoretically that the direct modulation properties of semiconductor lasers can be significantly improved by the injection of a so-called holding beam-a continuous-wave beam at the transparency wavelength of the gain medium. Both the small-signal and the large-signal behavior are investigated.
5.63 and 5.80 MeV levels of Ne20; de-excitation branching
Abstract The ratio Г γ /Г for the 5.63 and 5.80 MeV levels of Ne 20 has been determined to be 0.077 (±0.008) and −4 , respectively, by using the C 12 (C 12 , α)Ne 20 reaction and determining the fraction of the events in which the alpha-particle and the Ne 20 recoil are present in coincidence at the kinematically correct angles. In both cases these results in themselves are shown to imply radiative E1 transition (5.63→1.63 and 5.80→0, respectively) probabilities ⪡5 × 10 −5 Weisskopf units. When taken together with the life-time for the 5.63 MeV level measured by Evans et al . values of Г( E1 ) ≲ 5 × 10 −6 and Г α ≈ 6% of the particle estimate are obtained for this state.