Optical monitoring and control of three-stage coevaporated Cu(In1−xGax)Se2 by real-time spectroscopic ellipsometry
Real-time spectroscopic ellipsometry (RTSE) has been applied for in situ monitoring and control of thin-film copper-indium-gallium-diselenide, i.e., Cu(In1−xGax)Se2 (CIGS), deposition by high vacuum coevaporation in the three-stage process used for efficient photovoltaic devices. Initial studies have been performed on a ∼0.7-µm CIGS layer deposited on crystal silicon to minimize surface roughness and to develop an accurate structural/ optical model of the Cu-poor-to-Cu-rich and Cu-rich-to-Cu-poor transitions that define the ends of the second (II) and third (III) stages of growth, respectively.With a better understanding of the surface achieved through this model, correlations can be made between the surface state and the unprocessed RTSE data {ψ(t), Δ(t)}. During deposition in the solar cell configuration with 2- µm-thick CIGS on a Mo-coated glass substrate, indications of the Cu poor-to-rich and Cu rich-to-poor transitions appear clearly in {ψ(t), Δ(t)}, enabling direct control of stage II and III transitions. The transition times deduced optically are in good agreement with those identified from the film/substrate emissivity by tracking the substrate heater power. It is clear, however, that RTSE can provide higher sensitivity to these transitions and is, therefore, suitable for improved control of three-stage CIGS deposition.
In-situ study of CIGS dielectric function as a function of copper content
High efficiency CuIn1-xGaxSe2 (CIGS) thin film solar cells are produced by two-stage or three-stage co-evaporation processes. Both of these methods involve a Cu-rich to Cu-poor transition. One way to control the Cu-rich to Cu-poor transition is the so-called end point detection (EPD), which monitors the change of emissivity of the film as it changes from Cu-rich to Cu-poor. This method, however, depends on the thermal response of the substrate and the location of the corresponding thermocouple, which can lead to delays in observing the phase transitions. Presented here is a novel, nondestructive way to detect the presence of such phase changes from Cu-rich to Cu-poor or vice-versa. In this study we have relied on the high sensitivity of real time spectroscopic ellipsometry (RTSE) to simultaneously measure multiple structural and electronic properties of the absorber layer by extracting dielectric functions throughout the deposition.
An analytical approach to the design of electrodes in high-power, fast-transverse-flow CO2 lasers
Abstract Usually, the design of the electrodes of fast-transverse-flow CO 2 lasers relies more on experimental data than on theoretical analysis. Traditional systems sustain a stable, high-power discharge but the current distribution generates a peaked, non-uniform small-signal-gain pattern. We present a theoretical model suitable for the design of electrodes that achieves a quasi uniform gain distribution. The analysis, based on a two-temperature model and the gas-transport equations, computes the electron density that supports a flat gain pattern. Combining the desired electron density with the electron-balance equations, the model determines the required electric field. The results were used to design a new set of electrodes for a home-made fast transverse flow CO 2 laser. A stable, large volume discharge ( 4 × 8 × 90 cm 3 ) with very good uniformity was obtained. The resulting gain distribution was registered in a bi-dimensional map. The peak gain rose from 1.2 m - 1 , attained with the old electrode set, to 1.6 m - 1 with the new one and the gain showed a homogeneous profile.