Growth and superconducting transition of epitaxial thin films
thin films have been grown on SrTiO3 (STO) and yttrium-stabilized ZrO2 (YSZ) substrates by pulsed laser ablation. The substrate temperature dependence of orientation and superconducting properties were systematically studied. Good quality c-axis and a-axis orientated films can be obtained on SrTiO3 solely by changing the substrate temperature. On YSZ, films with good c-axis orientation can be grown, while it is hard to grow films with good a-axis orientation by changing substrate temperature alone. The highest TC 0 is about 37 K, which is found in the films grown on YSZ with a good c-axis orientation. For the films grown on STO, however, the highest TC 0 is about 35.6 K, with a mixed orientation of c-axis and a-axis. In most of the superconducting films, the weak temperature dependence of the normal state resistivity, as characterized by small ratios, together with a weak localization behaviour just above TC, could be attributed to the essential scattering due to the localized electronic states. The superconducting transitions in a field up to 10 T along the c-axis have been measured on a c-axis oriented film grown on SrTiO3. The zero-temperature in-plane upper critical field BC 2ab(0) is estimated from the resistivity transition data.
Size effect on variable-range-hopping transport in PrBa2Cu3O7-x.
Normal transport properties and their size effect of PrBa 2 Cu 3 O 7-x are studied using planar-type junction specimens. The transport properties of PrBa 2 Cu 3 O 7-x are in accordance with a variable-range-hopping mechanism. The localized wave function for this conduction has a decay length of 8.5 nm, and the hopping distance is 96 nm at 2 K. The conductance properties of junctions with a length of a few times the hopping distance show a size erect. A Coulomb correlation gap is observed at temperatures lower than 4 K, and the minimum conductance at the Coulomb gap depends weakly on temperature and magnetic field
Anomalous Annealing Behavior of Arsenic Implanted Silicon as a Function of Dose and Energy
Anomalous annealing behavior of damage in As implanted Si has been investigated by channeling effect measurements. Room temperature As implants with doses from 1014 to 2 × 1016cm-2 at energies ranging from 50 to 250 keV into Si were annealed over the range of 600°C to 1100°C. Anneal temperatures ≥ 950°C reduce the disorder for ion doses of 0.5 to 1 × 1016 cm-2 at energies between 50 and 250 keV. Anomalously high residual disorder was found for the intermediate doses of 2 × 1014 to 2 × 10/cm2 implanted above 100 keV. For this intermediate dose, annealing of implants performed at liquid nitrogen temperatures did not show significant reduction in this damage. However implants at 200° to 300°C indicate a lower amount of damage compared to the room temperature implants.