Achieving ultra low k dielectric constant for nanoelectronics interconnect systems
Air gaps are a promising alternative to porous low-k dielectrics to achieve ultra low k-values in Cu damascene interconnects. Two approaches of air gap formation using wet etch back of sacrificial PECVD SiO2 dielectrics were evaluated concerning their feasibility and preparation results are shown. Electrical measurements were verified by simulation and have shown a capacitance reduction of approximately 50 % compared to the SiO2 filled reference structures. Furthermore finite element method (FEM) simulations were performed to extract the effective k-value for different technology nodes. General k eff extraction procedure by FEM simulation is described. Furthermore the impact of variation of thickness and k-value of the functional layers applied for air gap formation was investigated. These functional layers are etch stop, cap and mask layers and currently consist of PECVD SiC:H films. It has been shown, that both parameters (thickness and k-value) considerably contribute to the effective k-value. For both investigated technology nodes, the 65 nm and 45 nm node, parameters can be found to fulfil the ITRS requirements for keff. Lower k-values of the functional layers are needed, if the thickness has to be increased for processing reasons. For example k=5.5 and thickness of 15 nm yield a keff of about 2.5 for the 45 nm node. Ultimate effective k-values of 2.0 and below could be achieved for lower k-value or thickness of the functional films
Air gap integration for the 45nm node and beyond
First promising results including reliability and electromigration of an extendable air gap integration approach obtaining mechanically stable air cavities at the inter-metal dielectric (IMD) level are presented. Extraction of the effective dielectric constant (k/sub eff/) is demonstrated to be 1.45 for non-passivated single damascene structures. Using 45 nm node specifications and the proposed integration scheme, two metal levels are simulated showing a k/sub eff/ of less than 2.0 after full integration, fulfilling multiple future interconnect node requirements.
Comparative Industrial Sociology and the Convergence Hypothesis
Industrial sociology grew spectacularly after World War II, concentrating on three areas: workers' relations with each other, their managers, and their unions; the social organization of the factory; and the impact of technology on social systems extending from the factory to the society. Unable to sus­ tain leadership in all of these areas, industrial sociology shrivelled as other fields invaded its domains. Human relations became the ideological property of the business schools; labor economics maintained its grip on industrial relations; industry-community relations waned as interest in community power soared; industrial organizations were absorbed into the study of com­ plex organizations; occupational sociology maintained research impetus in labor force analysis; and the sociology of the economy dominated the study of industry's institutional relationships. Industrial sociology survived on remnants: worker-machine relationships (job satisfaction, alienation, un­ employment), organizational responses to technological changes. and a bit of working-class ethnology. Enduring interest in technology, however, en­ abled industrial sociology to take part in sociology's expanding interest in comparative studies.