Ultra-shallow Junction Formed by Plasma Doping and Laser Annealing
We investigated ultra-shallow junction prepared by plasma doping (PLAD) and laser annealing (LA). Although PLAD is promising doping technology for the sub-45nm technology node due to the high dose rate at low energy, it has problems which is related with hydrogen or fluorine. The implanted hydrogen generally increases damage in the Si substrate. The fluorine also retards dopant activation and increases dopant deactivation during post-annealing step. Conventional one step annealing processes such as rapid thermal annealing (RTA) or excimer laser annealing (LA) are not effective method for high dopant activation. To minimize the effect of hydrogen or fluorine, we propose additional pre-annealing followed by conventional laser annealing. By employing low temperature pre-annealing, we can improve electrical characteristics such as low sheet resistance, high activation rates, shallow junction depth and reduced dopant deactivation. The improvement can be explained by reduced defect density and out-diffusion of fluorine or hydrogen which in turn enhances dopant activation during ELA
Role of fluorine in suppressing boron transient enhanced diffusion in preamorphized Si
We have explained the role of fluorine in the reduction of the self-interstitial population in a preamorphized Si layer under thermal treatment. For this purpose, we have employed a B spike layer grown by molecular-beam epitaxy as a marker for the self-interstitial local concentration. The amorphized samples were implanted with 7×1012, 7×1013, or 4×1014 F/cm2 at 100 keV, and afterwards recrystallized by solid phase epitaxy. Thermal anneals at 750 or 850 °C were performed in order to induce the release of self-interstitials from the end-of-range (EOR) defects and thus provoke the transient enhanced diffusion of B atoms. We have shown that the incorporation of F reduces the B enhanced diffusion in a controlled way, up to its complete suppression. It is seen that no direct interaction between B and F occurs, whereas the suppression of B enhanced diffusion is related to the F ability in reducing the excess of silicon self-interstitials emitted by the EOR source. These results are reported and discussed.
Ozonation of polycyclic aromatic hydrocarbons in oil/water-emulsions: mass transfer and reaction kinetics.
The ozonation of highly condensed polycyclic aromatic hydrocarbons (PAH) was studied in oil/water-emulsions, which are comparable to poorly water-soluble PAH in industrial wastewaters and at contaminated sites. As there was a lack of knowledge about the ozonation in oil/water-emulsions, first the ozone mass transfer was studied and optimized from the gas to the water phase and from the water to the oil phase. The ratio of mass transfer and oxidation reaction was determined by the Hatta-number and revealed a slow, quasi homogeneous reaction of ozone with PAH inside the oil droplets. Because the ozone gas concentration had no influence under the optimized conditions, the selective PAH-ozonation could be described microkinetically by a direct ozone reaction of pseudo-first order regarding PAH-concentrations. The determined PAH mean reaction rate constants of 1.02 min(-1) in oil/water-emulsions are in the upper range as found for PAH dissolved in water. These results give a new insight into the ozonation in the three-phase systems and into the treatment of highly condensed, hardly biodegradable PAH.