Reduced gain variation against temperature with thermistor on HPA module for W-CDMA system
A high-power amplifier (HPA) module for wide-band code division multiple access (W-CDMA) system with small gain variation against temperature is presented in this paper. Two temperature compensation techniques, which contain gain control bias circuits that correspond to temperature or thermistors were investigated. Comparison between the above techniques indicated that the technique with thermistors was more effective in reducing gain variation without affecting linearity. A fabricated two-stage HPA module for W-CDMA system with a thermistor in its input matching network provided a small gain variation within plusmn1 dB and an ACLR under -36 dBc in the temperature range from -10 to +85degC when ACLR was measured under load mismatched conditions, VSWR=1.4:1.
GaInP/GaAs collector-up tunneling-collector heterojunction bipolar transistors (C-up TC-HBTs): optimization of fabrication process and epitaxial layer structure for high-efficiency high-power amplifiers
This paper describes a novel heterojunction bipolar transistor (HBT) structure, the collector-up tunneling-collector HBT (C-up TC-HBT), that minimizes the offset voltage V/sub CE,sat/ and the knee voltage V/sub k/. In this device, a thin GaInP layer is used as a tunnel barrier at the base-collector (BC) junction to suppress hole injection into the collector, which results in small V/sub CE,sat/. Collector-up configuration is used because of the observed asymmetry of the band discontinuity between GaInP and GaAs depending on growth direction. To minimize V/sub k/, we optimized the epitaxial layer structure as well as the conditions of ion implantation into the extrinsic emitter and post-implantation annealing. The best results were obtained when a 5-nm-thick 5/spl times/10/sup 17/-cm/sup -3/-doped GaInP tunnel barrier with a 20-nm-thick undoped GaAs spacer was used at the BC junction, and when 2/spl times/10/sup 12/-cm/sup -2/ 50-keV B implantation was employed followed by 10-min annealing at 390/spl deg/C. Fabricated 40/spl times/40-/spl mu/m/sup 2/ C-up TC-HBTs showed almost zero V/sub CE,sat/ (<10 mV) and a very small V/sub k/ of 0.29 V at a collector current density of 4 kA/cm/sub 2/, which are much lower than those of a typical GaInP/GaAs HBT. The results indicate that the C-up TC-HBT's are attractive candidates for high-efficiency high power amplifiers.
NUMBER OF TRIANGULATIONS OF A MÖBIUS STRIP
Consider a Möbius strip with n chosen points on its edge. A triangulation is a maximal collection of arcs among these points and cuts the strip into triangles. In this paper, we proved the number of all triangulations that one can obtain from a Möbius strip with n chosen points on its edge is given by 4n−1 + (2n−2 n−1 ) , then we made the connection with the number of clusters in the quasi-cluster algebra arising from the Möbius strip.