Optical monitoring and control of three-stage coevaporated Cu(In1−xGax)Se2 by real-time spectroscopic ellipsometry
Real-time spectroscopic ellipsometry (RTSE) has been applied for in situ monitoring and control of thin-film copper-indium-gallium-diselenide, i.e., Cu(In1−xGax)Se2 (CIGS), deposition by high vacuum coevaporation in the three-stage process used for efficient photovoltaic devices. Initial studies have been performed on a ∼0.7-µm CIGS layer deposited on crystal silicon to minimize surface roughness and to develop an accurate structural/ optical model of the Cu-poor-to-Cu-rich and Cu-rich-to-Cu-poor transitions that define the ends of the second (II) and third (III) stages of growth, respectively.With a better understanding of the surface achieved through this model, correlations can be made between the surface state and the unprocessed RTSE data {ψ(t), Δ(t)}. During deposition in the solar cell configuration with 2- µm-thick CIGS on a Mo-coated glass substrate, indications of the Cu poor-to-rich and Cu rich-to-poor transitions appear clearly in {ψ(t), Δ(t)}, enabling direct control of stage II and III transitions. The transition times deduced optically are in good agreement with those identified from the film/substrate emissivity by tracking the substrate heater power. It is clear, however, that RTSE can provide higher sensitivity to these transitions and is, therefore, suitable for improved control of three-stage CIGS deposition.
Real time composition monitoring methods in physical vapor deposition of Cu(In,Ga)Se{sub 2} thin films
Three real-time composition monitoring methods in physical vapor deposition process of CIGS thin films were proposed. One is the detection of near infrared (NIR) transmittance through the CIGS films from the IR source such as a heater back side of the substrate. One is the detection of NIR reflectance of the incident light from the films. The other is the measurement of the substrate temperature during the preparation of the CIGS films. These methods utilize the difference of the carrier density between Cu-rich ({approximately}10{sup 20}/cm{sup 3}) and (In+Ga)-rich (<10{sup 16}/cm{sup 3}) films. The NIR transmittance through and reflectance from the Cu-rich film decrease due to high free carrier absorption. The temperature of the Cu-rich films was lower than that of the (In+Ga)-rich ones under the constant heating power because the Cu-rich films have larger radiation in proportion to absorption. Therefore, the change of Cu/(In+Ga) ratios at stoichiometry an be monitored by the variation of the NIR transmittance, NIR reflectance or the film temperature in real time. These composition monitoring methods are very useful and easily applied to the physical vapor deposition process of the CIGS films for photovoltaic application. The solar cell with active area of about 0.5 cm{sup 2},more » fabricated by obtaining the CIGS film using the latter monitoring method, showed an efficiency of 17.0%.« less
Dimensional Errors of Fixtures, Locating and Measurement Datum Features in the Stream of Variation Modeling in Machining
Machining processes are usually multi-station processes involving a large number of operations and several locating datum changes. Machining errors are thus introduced, transformed and accumulated as the workpiece is being machined. This paper introduces procedures for expressing the influence of errors in fixtures, locating datum features and measurement datum features on dimensional errors in machining. These procedures are essential in the derivation of the Stream of Variation model of dimensional machining errors using the CAD/CAPP parameters of the machining process. The linear state space form of the Stream of Variation model allows for advanced control theory achievements to be employed in formal solutions to problems in multi-station machining. Modeling procedures presented in this paper were experimentally verified in machining of an automotive cylinder head.