Study of Extended Defect Structure Induced by Pulsed Laser Annealing in Implanted Silicon Crystals
(a) Institute of Physics, Polish Academy of Sciences, Al. Lotniko´w 32/46,PL-02-668 Warsaw, Poland(b) Institute of Experimental Physics, Warsaw University, Ul. Hoz˙a 69,PL-00-681 Warsaw, Poland(c) Institute of Electron Technology, Al. Lotniko´w 32/46, PL-02-668 Warsaw, Poland(Received October 1, 1998)An analysis of extended defects generated during annealing by pulsed excimer laser radiation in sili-con crystals implanted with Ge ions is presented. The investigation was performed by means of twocomplementary methods: the interference-polarizing microscopy and the Lang X-ray transmissiontopography. The existence of extended defects was revealed. It has been stated that the distributionof these defects depends on the distribution of the power density in the laser beam cross-section.
Deformation state of 49BF +2‐implanted Si wafers after high‐temperature thermal annealing
The bending of 49BF-implanted Si wafers due to high-temperature annealing (T = 900 to 1100 °C) is investigated by means of X-ray topographic techniques. The results are comperatively considered with those for low-temperature annealing (T ≦ 800 °C) obtained earlier by the authors. It is shown that the most essential differences in low- and high-temperature intervals occur for implantation dose below the amorphization one. 
 
 
 
Die Verbiegung der mit 49BF Molekulen implantierten Si-Plattchen, die durch Hochtemperatur-Ausheilung (T = 900–1100 °C) entsteht, wurde mit Rontgentopographischen Methoden untersucht. Die Resultate wurden mit den Ergebnissen, die die Autoren fruher fur tieferen Temperaturen der Ausheilung (T ≦ 800 °C) erhalten haben, vergleichen. Der Hauptunterschied zwischen Hochtemperatur und Tieftemperatur-Ausheilung tritt hervor fur die Implantationsmengen, die noch keine Amorphisierung verusachen.
Finite Difference Modeling on the Temperature Field of Substrate in Friction Surfacing
Friction surfacing is an advanced process of great potential, especially in the field of repair and reclamation of worn and damaged components. As a kind of thermal processing technology, the temperature profile and changes of the substrate in friction surfacing are important factors to get coatings of high quality. In this paper, the temperature field of the substrate during the process is simulated by finite difference method. The results are consistent with experiments, reappearing the temperature change of the substrate during friction surfacing, allowing further study on figuration and quality of coatings.