Simulation study on influence of interface trap position in Sii-xGex Gate-All-Around (GAA) field-effect transistor
In this paper, performance degradation of Si1−xGex gate-all-around (GAA) Field-Effect Transistor (FET) depending on interface trap position was investigated through TCAD simulations. Interface traps were located at three different points along the channel. Parameters such as hole mobility and energy band were analyzed to understand the effects of partially generated interface traps by unstable GeOx.
Preferential oxidation of Si in SiGe for shaping Ge-rich SiGe gate stacks
The oxidation of SiGe is quite different from that of Si or Ge. By paying attention to the oxidation kinetics of SiGe, a gate stack formation guideline on SiGe is proposed. Based on the understanding of oxidation kinetics, we design the gate stack formation process and demonstrate very good C-V characteristics on SiGe with Si-cap free passivation, by direct deposition of a designed dielectric film, followed by an optimal post-deposition annealing.
Gender Pay Gap in the European Union Labor Market
The participation of women in the European Union labor market has been increasing over recent years, putting an end to the notion that women are a marginal part of the labor force. However, such increased integration of women into paid work has neither ended the traditional gender divide between jobs nor it translated into gender equality in terms of economic opportunity and economic participation in the labor market. The purpose of the paper is to briefly discuss the gender pay gap in the EU labor market. The paper defines gender pay gap and provides a brief theoretical overview of the underlying causes of such pay asymmetry between men and women. Statistics provided for EU 25 reveal that the current policy attempts to reduce such a gender asymmetry still lack improvement in practice. The paper concludes with selected policy suggestions aiming to make a progress in the issue of the gender equality in pay.