Influence of processing conditions on dielectric properties of CaCu3Ti 4O12 thin films
CaCu3Ti4O12 possesses one of the largest values of the effecti ve dielectric permittivity in a large frequency and temperature range ever reported for a ce amic material, and is thus a very promising materi l for various electronic and electromechanical applic ations. The origin of such high permittivity has be en attributed to ‘electrical’ heterogeneities in the m icrostructure [1-3]. By Chemical Solution Depositio n, we have prepared CaCu 3Ti4O12 ceramic thin films under different conditions, try ing to establish the influence of microstructure on their dielectric properties.
Nonintrinsic origin of the colossal dielectric constants in Ca Cu 3 Ti 4 O 12
The dielectric properties of $\mathrm{Ca}{\mathrm{Cu}}_{3}{\mathrm{Ti}}_{4}{\mathrm{O}}_{12}$, a material showing colossal values of the dielectric constant, were investigated over a broad temperature and frequency range extending up to $1.3\phantom{\rule{0.3em}{0ex}}\mathrm{GHz}$. A detailed equivalent-circuit analysis of the results and two crucial experiments, employing different types of contacts and varying the sample thickness were performed. The results provide clear evidence that the apparently high values of the dielectric constant in $\mathrm{Ca}{\mathrm{Cu}}_{3}{\mathrm{Ti}}_{4}{\mathrm{O}}_{12}$ are nonintrinsic and due to electrode polarization effects. The intrinsic properties of $\mathrm{Ca}{\mathrm{Cu}}_{3}{\mathrm{Ti}}_{4}{\mathrm{O}}_{12}$ are characterized by charge transport via hopping of localized charge carriers and a relatively high dielectric constant of the order of 100.
Stability results for the solutions of some third and fourth order differential equations
SummaryThe paper investigates conditions under which solutions of the equations (1) and (2) of § 1.1 tend to zero as t → ∞.