High-Brightness Wavelength-Beam-Combined Eyesafe Diode Laser Stacks
At 1450 nm, we have demonstrated 20-W wavelength-beam-combined output from a 25- element single bar (M<sup>2</sup> ~ 1.9 times 10), and 80-W cw from a 6-bar diode stack (M<sup>2</sup> ~ 36 times 68).
Advances in high-brightness high-power semiconductor lasers
We present recent advances in high power semiconductor laser bars and arrays at wavelengths from the near infrared to the eye-safe regime including increased spectral brightness with internal gratings to narrow and stabilize the spectrum, increased spatial brightness with multimode and high power single mode performance, and reduced cost architectures from high power surface emitting 2-dimensional arrays. These devices have the potential to dramatically improve diode pumped systems and enable new direct diode applications.
High reliability, high power InGaAs/AlGaAs 980 nm distributed feedback lasers with nonabsorbing mirrors
Summary form only given. The InGaAs-GaAs material system has received much. attention as sources for pumping Er-doped fiber amplifiers (EDFAs) near 980 nm. InGaAs-GaAs Fabry-Perot laser diodes have exhibited single spatial mode powers in excess of 200 mW, however, these devices can suffer from longitudinal mode shifting and instability resulting from optical feedback. Longitudinal mode stability coupled with lower temperature sensitivity make 980 nm high-power distributed feedback (DFB) lasers and distributed Bragg reflector (DBR) lasers desirable sources for pumping EDFAs.