A New CD Measurement Method Linked with the Electrical Properties of Devices
This paper describes a new measurement method of a CD-SEM with nanometer-level precision and good correlation with electrical characteristics for an actual device of ultra-large-scale integration (ULSI). With the decrease in feature size, the pattern to be measured tends to become a curved shape. In order to measure such a pattern within measurement precision on the order of 5 nm, two-dimensional measurement is effective. Here we report a new measurement algorithm featuring that the critical dimension is derived from the value of the area of a measurement pattern. We apply this measurement method to actual device of 64-Mbit DRAM and confirm the reproducibility of 3.6 nm for the gate linewidth measurement, and that of 5.6 nm for the hole diameter measurement. Furthermore, we verify that the measurement values of the gate linewidth have a strong correlation with the threshold voltage and those of the hole diameter also have a strong correlation with the contact resistance, respectively. key words: CD SEM, metrology, curved structure, electrical
Analysis Of Linewidth Measurement Techniques Using The Low Voltage SEM
Linewidth measurement using the scanning electron microscope is not well understood. The basic intent is to measure the size of a structure from the secondary and backscattered electron signal generated by that structure1-6. Thus, an accurate measurement requires an understanding of how the profile and critical dimension of the line being measured relate to the electron signal. The complicating factor is that different features generate different signals and that surroundings often influence the detected signal from a given feature.
Coherent pulsed injection seeding of two gain-switched semiconductor lasers
High-power, narrow-spectrum, short pulses at a wavelength near 830 nm are needed for optical logic applications. The authors report the generation of two coherent trains of pulses by pulsed injection seeding of two gain-switched semiconductor lasers with one mode-locked master oscillator. The available power was doubled and both lasers emit in nearly identical spectral lines. Short pulses (30-50 ps) are generated at a repetition rate of 1.9 GHz. The spectrum is reduced to a single mode cluster and shows a 1.7 AA wide chirp suitable for pulse compression. The peak power is 0.1 W for each pulse train. The capability of this technique for coherent power combining is demonstrated.<<ETX>>