The comprehensive study of liquid phase oxidation on GaAs-based transistor applications
The GaAs-based HEMTs with gate oxide and HBTs with surface passivation prepared by liquid phase oxidation (LPO) will be demonstrated. As compared to the Schottky-gate HEMTs, the lower gate leakage currents, higher breakdown voltages, and improved RF performances make the proposed technique suitable for high-power and high-speed applications. Moreover, the HBTs with oxide passivation possess the characteristics of lower surface recombination currents, higher breakdown voltage, and improved higher dc current gain.
AlGaAs/InGaAs metal-oxide-semiconductor pseudomorphic high-electron-mobility transistor with a liquid phase oxidized AlGaAs as gate dielectric
The investigation describes AlGaAs/InGaAs/GaAs metal-oxide-semiconductor pseudomorphic high-electron-mobility transistors (MOS-PHEMTs). The gate dielectric is obtained by oxidizing AlGaAs in liquid phase. The MOS-PHEMTs have a larger gate swing voltage, a lower gate leakage current and a higher breakdown voltage than their counterpart PHEMTs do.
Passivation of (NH4)2S‐treated GaAs surface with an As2S3 film
This letter describes the suppression of (NH4)2S‐treated GaAs surface degradation by coating the treated surface with an evaporated As2S3 film. The photoluminescence intensity of the treated GaAs surface shows no decrease even after 100 days. The properties of the As2S3/GaAs interface were also evaluated by metal‐insulator‐semiconductor techniques. A small hysteresis capacitance‐voltage curve with reduced frequency dispersion was obtained, which indicates low interface state density. The passivation of the (NH4)2S‐treated surface by coating with an As2S3 film is very promising for GaAs surface electronic property improvements.