Combined lifetime killing by platinum and fast light ions in silicon power diode : thermal stability of introduced radiation defects
The influence of combined lifetime killing by platinum in-diffusion and fast light ion irradiation on generation and stability of introduced radiation defects was investigated in the low-doped n-type float-zone oxygen rich silicon forming the base of power pnn diodes. Different concentrations of platinum substitutionals were introduced by platinum implantation and subsequent annealing at temperatures ranging from 725 to 900°C. Diodes were then irradiated with 1.8 MeV protons or 5 MeV alphas to fluences ranging from 5x10 to 1x10 cm. The influence of platinum doping on introduction rates of dominant radiation defects and their thermal stability during subsequent isochronal annealing was investigated by deep-level transient spectroscopy. Results show that the presence of platinum atoms significantly influences introduction rates of dominant recombination centers introduced both by hydrogen and helium irradiation (vacancy-oxygen pairs, divacancies and VOH complexes). Simultaneously, temperature stability of vacancy-oxygen pairs and divacancies decreases of up to 150°C. In both cases, these effects are proportional to platinum concentration introduced into diodes.
Optimum lifetime structuring in silicon power diodes by means of various irradiation techniques
Abstract Application of radiation defects for adjustment of power diode parameters is demonstrated. Local lifetime control (LLC) by proton and alpha-particle irradiation with energies 1.8–12.1 MeV is compared with uniform lifetime killing by 4.5 MeV electrons. The influence of both the techniques on static and dynamic parameters of modified diodes is experimentally established and explained by means of state-of-the-art simulation system. Optimization means and limits of lifetime control by irradiation techniques are discussed, as well.
Handbook of Concrete Engineering
Handbook of concrete engineering , Handbook of concrete engineering , مرکز فناوری اطلاعات و اطلاع رسانی کشاورزی