Comparative study of tri-gate flash memories with split and stack gates
The functional tri-gate flash memories with splitgate have been demonstrated for the first time, and its Vt variabilities before and after one P/E cycle have be systimetically compared with stack-gate ones. It was confirmed that split-gate shows smaller Vt distribution after erase and excellent over-erase immunity compared to those of stack-gate. Moreover, it was found that BVDS is higher than 3.2 V even Lgc was down to 76 nm. This indictes that tri-gate is useful for scaled NOR flash.
Comparative Study of Charge Trapping Type SOI-FinFET Flash Memories with Different Blocking Layer Materials
The scaled charge trapping (CT) type silicon on insulator (SOI) FinFET flash memories with different blocking layer materials of Al2O3 and SiO2 have successfully been fabricated, and their electrical characteristics including short-channel effect (SCE) immunity, threshold voltage (Vt) variability, and the memory characteristics have been comparatively investigated. It was experimentally found that the better SCE immunity and a larger memory window are obtained by introducing a high-k Al2O3 blocking layer instead of a SiO2 blocking layer. It was also confirmed that the variability of Vt before and after one program/erase (P/E) cycle is almost independent of the blocking layer materials.
La inseguridad jurídica en normas de contratación estatal
It is established by different studies that the issue of government procurement has been marred by several factors, the test objective to publicize these factors, we take as starting point the constant conflict between the branches of government to try and organize this subject; will collect and analyze diverse regulatory and case material in order to achieve evidence and demonstrate the different concepts of constant change that produces excessive regulation of the subject procurement and is in turn causing rapid changes that result in legal uncertainty for our law on the Contract Status.