Polishing damages to electrical properties of BLT thin film capacitors fabricated by damascene process of chemical mechanical polishing
BLT thin film capacitor was fabricated by the novel method of chemical mechanical polishing (CMP) process. The electrical characteristics including P-V and I-V of BLT capacitor were damaged by the polishing pressure which is one of the main factors to improve the CMP performance for BLT thin film; therefore, the lower polishing pressure must be selected for the good electrical characteristics although the removal rate was lower.
Structural and electrical properties of metal-ferroelectric-insulator-semiconductor field-effect transistors using a Pt/Bi3.25La0.75Ti3O12/CeO2/Si structure
The metal-ferroelectric-insulator-semiconductor (MFIS) capacitors were fabricated using a metal organic decomposition (MOD) method. The CeO2 thin films were deposited as a buffer layer on Si substrate and Bi3.25La0.75Ti3O12 (BLT) thin films were used as a ferroelectric layer. The electrical and structural properties of the MFIS structure were investigated by varying the CeO2 layer thickness. The width of the memory window in the capacitance–voltage (C–V) curves for the MFIS structure decreased with increasing thickness of the CeO2 layer. Auger electron spectroscopy (AES) and transmission electron microscopy (TEM) show no interdiffusion by using the CeO2 film as buffer layer between the BLT film and Si substrate. The experimental results show that the BLT-based MFIS structure is suitable for non-volatile memory field-effect-transistors (FETs) with large memory window.
Calculation of Complex Radiant Heat Load From Surrounding Radiator Surface Temperatures
Abstract A method for calculating the radiant heat exchange between an absorber and individual radiating components in its surroundings is reported. Radiator surface temperatures, ambient and absorber temperatures, and configuration factors for radiating components in the surroundings are used in the customary radiant heat exchange formulae. Simplified methods for calculating or estimating configuration factors for radiators of various shapes solely from angles, subtended at the absorber by the radiators are presented. The method has been verified in the laboratory under controlled conditions and has been used to advantage in the field studies. The method has advantages over the globe therometer method in certain applications.