New Types of Orthonormal Electromagnetic Beams in Complex Media and Free Space
Abstract : Vector plane-wave superpositions defined by a given set of orthonormal scalar functions on a two- or three- dimensional manifold are treated. We present a technique for composing orthonormal electromagnetic beams in complex media and free space. New families of exact time-harmonic solutions of the homogeneous Maxwell equations in linear media (isotropic, chiral, anisotropic, and bianisotropic) and free space, which describe orthonormal electro magnetic beams, are obtained.
On the possibility of anomalous axial propagation in highly dissipative dielectric TFHBMs
Anomalous axial propagation has been theoretically shown to be possible in a dielectric helicoidal bianisotropic medium (HBM) with local uniaxiality, just like a thin-film HBM (TFHBM). A necessary condition is that the medium be highly dissipative. The anomalous axially propagating fields do not have the ordinary space-harmonic structure; instead, the amplitudes of two of the four axial propagation modes vary linearly along the axis.
Photoreflectance characterization of vanadium-doped GaAs layers grown by metalorganic vapor phase epitaxy
Abstract We characterized the vanadium-doped (GaAs:V) layers grown on GaAs substrate by metalorganic vapor phase epitaxy. The conductivity of the samples is checked by the Hall effect measurements, and it is n type with electrons concentration ranging from 2×10 13 to 2×10 17  cm −3 . We used the photoreflectance technique (PR) to study the effect of vanadium doping on the optical properties of GaAs. Our experimental results show that the built-in electric field F and the broadening parameter Γ 0 increase with V-doping concentration. Furthermore, the temperature dependence of the built-in electric field and the broadening parameter of GaAs:V samples have been investigated by PR. It has been observed that these parameters increase with increasing temperature. The decrease of the built-in electric field with decreasing temperature is due to the photovoltage effect.We characterized the vanadium-doped GaAs (GaAs:V) layers grown on GaAs substrate by metalorganic vapor phase epitaxy.