A Conductivity Modulated Polysilicon Thin-Film Transistor
This paper reports a novel high voltage Conductivity Modulated Thin-Film Transistor (CMTFT) fabricated using polycrystalline silicon. The transistor uses the idea of conductivity modulation in the offset region to obtain a significant reduction in on-state resistance. Experimental on-state and off-state current-voltage characteristics of the CMTFT have been compared with those of the conventional offset drain device. Results show that the CMTFT has six times to more than three orders of magnitude higher on-state current handling capability for operating at drain voltages ranging from 15 V to 5 V while still maintaining low leakage current and providing even faster switching speed. The CMTFT devices can be fabricated using a low temperature process (620/spl deg/C) which is highly desirable for large area electronic applications.<<ETX>>
Poly-Si/-Si(1-x)Ge(x)/Si Sandwiched Conductivity Modulated TFT for High-Voltage Drivers in Large Area Electronic Applications
Both pand n-channel poly-Si/Sil_xGe/Si sandwiched conductivity modulated TFTs (CMTFTs) are demonstrated. The transistors use a poly-Si/Sil_xGe/Si sandwiched structure as the active layer and the concept of conductivity modulation in the offset region. Results show that the transistors provide over an order of magnitude higher on-state current as well as low leakage current compared to those of conventional offset drain TFTs: The devices are most suitable for high-voltage drivers in low temperature fully-integrated large area electronic applications.
Physics of Novel Amorphous Silicon High-Voltage Transistor
In this paper we describe the operation of a novel amorphous silicon high voltage transistor. Its attractive feature is that it can operate at source-drain voltages in excess of 400 volts but its characteristics are controlled by applying only a low bias (0-10 volts) to a gate electrode covering a small portion of the sourcedrain channel near to the source. The portion of the device over this gate electrode operates as a conventional amorphous silicon Field-Effect Transistor which injects electrons into the intrinsic amorphous silicon between this region and the drain electrode. We present experimental data showing the current-voltage characteristics of this new transistor as a function of geometry and demonstrate that the above model realistically describes its operation.