Crystalline Si solar cells fabricated by CO2 laser doping
We proposed CO<sub>2</sub> laser doping technique as a fabrication method of c-Si solar cell, and demonstrated its availabilities with the cell characteristics. P and B-doping with relatively high carrier density around 10<sup>20</sup> cm<sup>-3</sup> were realized by the CO<sub>2</sub> laser irradiation. We found that the pulse frequency is one of the most important parameter to improve the cell performances.
22.0% Efficient Laser Doped back Contact Solar Cells
Abstract We present the first laser doped interdigitated back contacted solar cells with efficiency η = 22.0%. The cell area is 2 x 2 cm 2 , and contains the metallization of both busbars. The high flexibility and spatial resolution of our laser doping process enables local n-type and p-type doping with a precision below 30 μm and avoids any masking process.
Resonant Auger decay study of C1s -> pi* core-excited OCS
The present work aims at characterizing short-lived C1s((-1)) pi*((1)) core-excited states of the OCS molecule based on the analysis of the vibrational fine structure and lineshape profiles of the high-resolution resonant Auger decay spectra recorded at the excitation energies along the C1s -> pi* resonance in the binding energy region 15-19eV. Very different behavior in terms of lineshape and resonant enhancement is observed for the (A) over tilde, (B) over tilde and (C) over tilde final states. This is explained by (1) the variation in the C-O bond lengths for the states involved in the electronic relaxation and (2) different contributions in terms of Mulliken population to the molecular orbitals determining the electronic character of the corresponding states. Since the final-state geometries are known from a number of previous experiments and ab initio calculations, the geometry of the C1s((-1)) pi*((1)) intermediate states can be predicted in analogy with e.g. the N-2, CO2 and N2O molecules. (C) 2009 Elsevier B.V. All rights reserved. (Less)