Symmetric 10G-EPON ONU transceiver integrated with newly-developed burst-mode pre-bias timing control IC
We developed symmetric 10G-EPON ONU transceiver fully compliant with IEEE802.3av PR30. Output power of +5 dBm, sensitivity of -32.4 dBm, and fast LD turn-on/off time of 10 ns/7 ns were successfully achieved by newly-developed burst-mode pre-bias timing control IC.
Recent progress of high-speed burst-mode transceiver technologies for TDM-PON systems
In this paper, we report on the performances both of ONU and OLT transceivers for 10G-EPON systems including dynamic power saving technology and 10G/1G dual-rate receiving technology. The dynamic power saving technology for ONU can realize fast response less than 736 ns and high power consumption degradation more than 38 % in the heavy uplink traffic conditions. On the other hand, OLT receiver can achieve high receiver sensitivity for each 10G and 1G less than -30.6 dBm and -34.6 dBm, respectively, with fast receiver settling times of 800 ns for 10G and 400 ns for 1G.
10 Gbit/s avalanche photodiodes applicable to nonhermetic receiver modules
Highly reliable InAlAs-APDs have been developed for highly sensitive 10 Gbit/s receivers. Estimated lifetime is as long as 1,000,000 hours at 75/spl deg/C, and a stable operation in a dump-heat ambient (138/spl deg/C, 85%RH) was also demonstrated.