Transferring porous layer from InP wafer based on the disturbance
We present a new method to transfer the three dimensional (3D) porous layer from InP wafer based on the disturbance, during electrochemical etching of n-InP (100) with chronopotentiometry with current ramp in 3 mol-L−1 NaCl solution. The potential bursting phenomenon was observed due to the disturbing instantaneously. In addition, the correlation between the amplitude of the potential and the porous layers separated from the InP wafer was discussed.
Porous Nanostructured InP: Preparation and Properties
A general procedure is devised to control the process of formation of porous layers on semiconductor surfaces by the method of electrochemical etching. When controlling the process of pore formation on the surface of crystal, it is necessary to consider: conditions of pore formation, requirements that are put forward to quality of the obtained nanostructures, and mechanisms that underlie the process of pore formation. Main morphological criteria are selected of quality of porous nanostructures. These include diameter and depth of the pore, a degree of porosity of the surface of a nanostructured crystal. Taking into account these criteria, we received porous spaces on the surface of semiconductors InP. We determined the value of boundary voltage of the early pore formation for semiconductors of group A3V5 during etching. Keywords— porous layers; electrochemical etching; surface of crystal; nanostructures; indium phosphide
Nano‐ and macropores in the model for current oscillations at the Si/electrolyte contact
The transition from sustained to damped current oscillations or to stationary behavior is described using a model based on morphological aspects. A roughening of the oxide and of the underlying Si surface is predicted, in accordance with measurements. The role of cracks and nanopores in silicon oxide is discussed with regard to roughness increase and macropore formation. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)