A modified MODPEX model for MOSFET and parameter optimization using excel-based genetic algorithm
MODPEX is widely used in industry and universities to produce Pspice model for power semiconductor devices, including MOSFETs. However, the model generated by MODPEX for MOSFETs does not include channel charge at strong inversion condition. This paper presents a modified MODPEX model for MOSFETs, which includes channel charge at strong inversion condition. A process based on genetic algorithm (GA) implemented in Microsoft Office Excel is developed to optimize parameters of the modified MODPEX model. Static and dynamic validation proves that the modified MODPEX model improves simulation accuracy in both switching loss and driver loss.
Parameter extraction for the PSP MOSFET model by the combination of genetic and Levenberg-Marquardt algorithms
Based on the combination of the genetic and Levenberg-Marquardt algorithms, a new method is developed to perform both local and global parameter extraction for the PSP MOSFET model. It has been successfully used to extract parameter sets for a 65-nm technology node. Numerical examples demonstrate its ability to obtain highly accurate model parameter values without excessive computational cost.
Symmetric bulk charge linearisation in charge-sheet MOSFET model
An accurate, simplified version of the charge-sheet MOSFFT model is developed using symmetric linearisation of the bulk charge as a function of surface potential. The resulting MOSFET model satisfies the Gummel symmetry condition and is verified by comparison with the exact results.