16 W CW output power from 100-/spl mu/m aperture laser based on quantum well asymmetric heterostructure with lowest internal loss
16 W CW room temperature front facet output optical power and 72% wall plug efficiency were attained in 100-/spl mu/m-aperture laser diodes based on quantum well heterostructure with ultra wide asymmetric waveguide.
Internal optical loss in semiconductor lasers
Internal optical loss in high-power semiconductor lasers based on quantum-well separate-confinement heterostructures was studied. Calculations show that the major portion of the internal optical loss occurs in the active region and emitters. Making the laser waveguide thicker and the cavity longer reduces the internal optical loss. Two possible approaches to the design of laser heterostructures are considered, and optimal solutions are suggested. The difference in the internal optical loss between lasers on InP and those on GaAs substrates is attributed to the larger cross section of photon absorption by holes in InP. Good agreement between the calculated and experimental values of the internal optical loss in lasers on InP and GaAs substrates is obtained.
10.9 W continuous wave optical power from 100 /spl mu/m aperture InGaAs/AlGaAs (915 nm) laser diodes
10.9 W continuous wave (CW) optical power is achieved from a 100 /spl mu/m aperture InGaAs/AlGaAs (915 nm) laser diode. No catastrophic optical mirror damage was observed. Diodes also demonstrated strong resistance to thermal damage. Power conversion efficiency as high as 59% has been measured for a 2 mm long laser diode. Reliability studies on 40 /spl mu/m aperture laser diodes have been carried out for over 10 kh at /spl sim/24 mW//spl mu/m for a total output power of 950 mW under CW condition. Under these conditions, the extrapolated lifetime of the diodes is 56 kh.