Preparation and Characteristics of Cloth Inductor
A cloth inductor consisting of mechanically interwoven amorphous ferromagnetic fibers and conducting fibers is described, and the inductor characteristics reported for various fiber lengths, diameters, and weaving patterns. The inductance L increases nearly in proportion to the fiber length, and in proportion to the second power of the amorphous fiber diameter and the second power of the number of conducting fiber turns per unit length, as expected. The leakage flux and total inductance also depend on the relative flux orientations of neighboring amorphous fibers.
Structure and characteristics of wire inductor.
The miniaturization of magnetic cores wound by copper wire is difficult because of the structure. In this paper the authors describe a miniaturized inductor containing amorphous magnetic wire which they have succeeded in realizing with a large inductance per unit volume. Further, the size of the inductor is smaller than that of inductors with conventional cores. The frequency characteristics of inductance of the wire inductor is controlled by the demagnetizing factor of the amorphous wire, and one thus can realize an inductor which operates in sub-MHz frequency domain.
Preparation of Ba-ferrite films for perpendicular magnetic recording by RF targets facing type of sputtering
A rf Targets Facing Type of Sputtering(rf-TFTS) apparatus was used to deposit hexagonal magnetoplumbite type of Ba ferrite (BaO.6Fe 2 O 3 : BaM) films with c-axis orientation at high rate. Although high rate sputtering of BaM was possible under stable conditions in rf-TFTS, the film composition changed drastically with total gas pressure P total and input power P av during sputtering. These changes in film composition corresponded well to the change in the potential difference Vd between plasma and wall, that is, the deficiency in Ba content in the films increased as V d increased. These results indicate that the change in composition is caused by ion bombardment of the substrate during sputtering (i.e., Ba atom is resputtered preferencially), since the ions in plasma can bombard the substrate with energy about e.V d . The value of V d decreases as P total or P av increases and the BaM films with stoichiometric composition were obtained at high P total or at high P av . Therefore, sputtering must be performed under the condition of high sputtering power or of high sputtering gas pressure, where V d becomes small, to deposit stoichiometric BaM films.