Design and implementation of a measuring system for shipbuilding based on WinCE
The measurement in shipbuilding is an important task of improving the quality and efficiency. Precision industrial surveying and computer technology can be applied to embedded measurement systems, in which the convenient functions of coordinate data collection, assistant calculation and analysis are provided to test shipbuilding quality. In this paper, the process of system design and operation was described in detail, and then the key technologies involved were discussed.
3-D geometric modeler for rapid ship safety assessment
Abstract CAD systems are used broadly in the shipbuilding industry. CAD systems for naval architecture are a useful tool for hull form, internal arrangement and the structural design of ships. These systems require high precision and expertise for efficient use. Therefore, these systems are not appropriate in supporting emergency responses, which require rapid modeling even if it generates some errors. This paper describes a geometric modeler for rapid ship safety assessment. The modeler is developed based on the 3-D geometric modeling kernel ACIS. The definition of hull form, internal arrangement and major longitudinal structural members is a fundamental function of the modeler. The developed modeler is interfaced with other applications used for ship safety assessment such as hydrostatic calculation, ship motion analysis in wave condition, longitudinal strength analysis and so on. In addition, it can generate a new ship model by making variations in a previously defined ship model.
Selective etching of InP in NaF solution
Abstract The crossing porous structure of InP has been obtained by electrochemical etching in NaF solutions. The behavior of the periodic oscillation occurs at different potential ranges for the different concentrations of solutions, and it will disappear with the concentration of the solution decreased. The scanning electron microscope (SEM) image shows that the pores have two directions on the surface and are perpendicular to each other. The two directions are assigned to [0 1 1] and [ 0 1 ¯ 1 ], respectively. The SEM image of the cross-section also shows that the two directions are assigned to [1 1 1]B and [ 1 1 ¯ 1 ¯ ]B. Both are due to the selective etching of F− ions. The crossing porous structure of InP is a very promising feature for the three-dimensional structure of III–V compound semiconductors for photonic band gap materials.