Defense Technical Information Center Compilation Part Notice ADP 015106 TITLE : AlGaAsSb-InGaAsSb-GaSb Epitaxial Hetero structures for Uncooled Infrared Detectors
To order the complete compilation report, use: ADA423729 The component part is provided here to allow users access to individually authored sections f proceedings, annals, symposia, etc. However, the component should be considered within [he context of the overall compilation report and not as a stand-alone technical report. Abstract Lattice matched n-type AlGaAsSb-InGaAsSb-GaSb heterostructures for uncooled infrared detectors including separate absorption and multiplication avalanche photodiodes (SAM-APD) as well as low-voltage InGaAsSb APDs were grown using inexpensive liquid phase epitaxy. Formation of the pn-junction was performed through diffusion of Zn from the vapor phase. Responsivity at X = 2 pm as high as 3.5 A/W was achieved in InGaAsSb APD biased at 8 V with the avalanche multiplication starting at 6 V. Our calculations have shown that the above parameters can result in a NEP value as low as lxl0-2 W or D* value as high as 2x10 10 cm'Hz 1 1 2 /W at room temperature for 400 gim diameter (200 pm diameter photoactive area) APD diodes.
Study of Zn diffusion into GaSb from the vapour and liquid phase
Abstract In order to develop a simple and reproducible method to fabricate p-n structures on GaSb for optoelectronic devices, the Zn-diffusion into n-doped GaSb substrates was studied. Two methods of Zn-diffusion were experimentally investigated: (a) diffusion from the vapour phase in a pseudo-closed box system and (b) diffusion from the liquid phase from a Ga-Sb-Zn melt. The process parameters, which provide good control over Zn surface concentration and p-n junction depth, were determined.
Research on Application of Information Technology and Mathematical Modeling in Precision Agriculture
Abstract:  This paper analyses the principle and development potential of Precision Agriculture, then provides the elementary scheme of Precision Agriculture in China based on applied mathematical model and information technology.