Performance of position sensitive scintillator detectors when readout with a low noise photodevice
The technique of position sensitive scintillating bar detectors used as the building blocks of position sensitive planes offers the remarkable advantage of greatly reducing the number of readout electronic chains. A position sensitive bar is usually readout by two photo-detectors and, combining the two signals, energy and position of an interacting particle or gamma-ray can be evaluated. In this kind of detector the performances can suffer from the double readout that introduces the noise and uncertainty of two readout systems. The use of Silicon Drift Chamber as a photo-detector opens new perspectives in the design of scintillating bar detectors. In this case the high quantum efficiency of Si for light detection and the very low noise of the device practically cancel the disadvantages of a double readout system. In this work the results achieved stimulating with gamma rays of different energies scintillating bars with square cross section of 3 mm and various length from 15 cm to few cm, with double side Silicon Drift Chamber readout are presented and discussed. For these test an old scintillating material as CsI(Tl) has been chosen manly for its easy availability in different shapes and the good matching of the wavelength of its scintillation light with Si. The use of different materials is also discussed.
Detectors for high-resolution gamma-ray imaging based on a single CsI(Tl) scintillator coupled to an array of silicon drift detectors
Silicon drift detectors (SDDs) coupled to scintillators have been recently employed successfully in gamma-ray detection. The low value of output capacitance of an SDD allows to reach a lower electronics noise with respect to a conventional silicon photodiode. Detectors based on array of SDDs are of particular interest for gamma-ray imaging. A first prototype conceived for high-resolution imaging is based on a monolithic array of small SDDs (5 mm/sup 2/ each unit) with on-chip junction field-effect transistor (JFET). The first results obtained with a seven-elements array are here reported. For the realization of gamma detectors of larger active areas based on assembled units; SDDs of 30 mm/sup 2/ of area with external JFET have been produced. We present the experimental results obtained in the characterization of a single CsI(Tl)-SDD unit.
High resolution CsI(Tl)/Si-PIN detector development for breast imaging
High resolution multi-element (8/spl times/8) imaging arrays with collimators, size matched to discrete CsI(TI) scintillator arrays and Si-PIN photodetector arrays (PDA's) were developed as prototypes for larger arrays for breast imaging. Photodetector pixels were each 1.5/spl times/1.5 mm/sup 2/ with 0.25 mm gaps. A 16-element quadrant of the detector was evaluated with a segmented CsI(TI) scintillator array (1.5/spl times/1.5/spl times/6 mm/sup 3/ segments with 0.25 mm septa) coupled to the silicon array. The scintillator thickness of 6 mm corresponds to >85% total gamma efficiency at 140 keV. Pixel energy resolution of <8% FWHM was obtained for Tc-99m (140 keV). Electronic noise was 41 e/sup -/ RMS corresponding to a 3% FWHM contribution to the 140 keV photopeak. Detection efficiency uniformity (/spl plusmn//spl sigma/%) measured with a Tc-99m flood source was 4.3% for a /spl sim/10% energy photopeak window. Spatial resolution was 1.53 mm FWHM and pitch was 1.75 mm as measured from the Co-57 (122 keV) line spread function. Signal to background was 34 and contrast ([max-min]/[max+min]) was 0.94. The energy resolution and spatial characteristics of the new imaging detector exceed those of other scintillator based imaging detectors. A camera based on this technology will allow: (1) Improved Compton scatter rejection; (2) Detector positioning in close proximity to the breast to increase signal to noise; (3) Improved spatial resolution; and (4) Improved efficiency compared to high resolution collimated gamma cameras for the anticipated compressed breast geometries.