Failure analysis on the standby current due to dislocation in STI structure of flash memory
The technology of increasing Internal Vcc without using memory tester is used to enhance the photon emission and the failure range is defined in detail by nano probing. With these methods, we found out that the leakage current was caused by dislocations of STI arranged in a row.
Application of three-dimensional dislocation dynamics simulation to the STI semiconductor structure
Abstract As the size of semiconductor devices continues to shrink, the control of dislocation nucleation is becoming a severe problem due to high accumulated stress. In this paper, we propose a method to infer the initiation points and slip systems of nucleated dislocations through a combination of TEM observation and dislocation dynamics simulation based on FEM calculation. In order to reproduce the behaviors of dislocations on the nanometer scale, we adopted the core splitting concept first proposed by Brown and employed by Schwarz. We applied our method to a shallow trench isolation (STI) structure. The initiation points and slip systems of four kinds of nucleated dislocations can be detected. It is found that the line tension of the dislocation strongly affects the loop’s final shape, unlike the macroscopic dislocations observed in wafer slip.
General expression for the density effect for the ionization loss of charged particles
The equations for the density-effect correction $\ensuremath{\delta}(X)$ for the ionization loss as given in a previous paper have been extended to the case where $\ensuremath{\delta}({X}_{0})\ensuremath{\equiv}{\ensuremath{\delta}}_{0}g0$. Here ${X}_{0}$ is the lower limit of the range ${X}_{0}lXl{X}_{1}$, where a particularly simple expression for $\ensuremath{\delta}(X)$ applies; $X={log}_{10}(\frac{p}{{m}_{0}c})$, where $p$ is the momentum and ${m}_{0}$ is the mass of the incident particle. The case ${\ensuremath{\delta}}_{0}g0$ applies directly to the calculation of $\ensuremath{\delta}(X)$ for conductors (metals).