High k/III-V structures: Interfaces, oxides quality and down scaling
In this paper, we present our studies on high k/InGaAs and high k/InSb structures, focusing on the interfaces, oxides qualities as well as down scaling the gate oxide. We indicate the free movement of Fermi level in both kinds of n- and p-InGaAs MOSCAPs. The effect of gases plasma treatments in the improvement of gate oxides as well as high k/InGaAs interface quality is also discussed. For high k/InSb structure, the effect of post deposition annealing temperatures on electrical properties of this structure is presented. Finally, we present our efforts on down scaling the equivalent oxide thickness of these structures into sub-nm size.
Electrical Characterization of $\hbox{Al}_{2} \hbox{O}_{3}$/n-InAs Metal–Oxide–Semiconductor Capacitors With Various Surface Treatments
Ex situ sulfide and HCl wet chemical treatments in conjunction with in situ trimethyl aluminum (TMA) pretreatment were performed before the deposition of Al2O3 on n-InAs surfaces. X-ray photoelectron spectroscopy analyses show a significant reduction of InAs native oxides after different treatments. The capacitance-voltage C- V characterization of Al2O3/n-InAs structures shows that the frequency dispersion in the accumulation regime is small (<; 0.75%/dec) and does not seem to be significantly affected by the different surface treatments, whereas the latter improves depletion and inversion behaviors of the n-channel metal-oxide-semiconductor capacitors. The interface trap density profiles extracted from the simulation mainly show donorlike interface states inside the InAs band gap and in the lower part of the conduction band. The donorlike traps inside the InAs band gap and in the lower part of the conduction band were significantly reduced by using wet-chemical-plus-TMA treatments, in agreement with C-V characteristics.
HRTEM study of orthorhombic zirconia in MgO-PSZ
High-resolution transmission electron microscopy (HRTEM) was used to study the phase of orthorhombic ZrO2 formed in magnesia partially stabilized zirconia (MgO-PSZ) during HRTEM specimen preparation. Based on the three reported crystal structures of orthorhombic ZrO2, with the space groups Pbcm, Pbc21 and Pbca, here it is shown that orthorhombic ZrO2 formed in MgO-PSZ has the Pbcm structure.