Developments of GaN Bulk Substrates for GaN Based LEDs and LDs
In the present work, we discuss the importance of bulk GaN substrates for GaN based LEDs and LDs. As crystal growth methods for growing bulk GaN, we study the hydride vapor phase epitaxial (HVPE) method and the pressure-controlled solution growth (PC-SG) method. The recent results obtained by these two methods are presented. The maximum size of the grown single crystals was 3 × 4 cm2 for the HVPE method and 12 mm diameter for the PC-SG method. Both methods can provide high quality GaN substrates, with a low dislocation density of the level of less than 106 cm–2.
Growth of III-Nitrides with Halide Vapor Phase Epitaxy (HVPE)
III-nitrides can be grown by employing several different techniques, such as molecular-beam epitaxy (MBE), metalorganic vapor-phase epitaxy (MOVPE), halide vapor-phase epitaxy (HVPE), high-pressure solution growth, and sputtering. Each of these are suited for a particular application; the specific property of HVPE is a much larger growth rate, which makes this technique the natural choice for growth of very thick layers that can be used as high-quality native substrates for subsequent growth of device structures using other techniques. Such substrates will be needed for certain devices with high current density or high voltage load, where the high defect density caused by growth on foreign substrates (heteroepitaxy) cannot be tolerated. The HVPE technology is still under development, and below we present the present situation with emphasis on GaN. The thermodynamic limitations of HVPE growth are discussed first, including the high-temperature chemistry in both the source zone and growth zone of a growth reactor. Examples of the design of growth systems are given; in particular, issues such as flow patterns, parasitic growth, and growth rates are discussed. Methods to reduce the defect density for growth on foreign substrates are discussed, as well as various lift-off techniques to prepare free-standing GaN wafers. Common characterization techniques are mentioned, and important physical properties of high-quality GaN wafers are given. The ongoing developments of HVPE growth for AlN and InN are also briefly summarized.
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