Dopant effects on the photoluminescence of interstitial-related centers in ion implanted silicon
This work is supported by a grant from the Australian 
Research Council. B.C.J. is partially supported by the Japan 
Society for the Promotion of Science (JSPS) (Grant-in-aid 
for Scientific Research, 22.00802).
Recombination luminescence from ion implanted silicon
Abstract Peaks at 0.790, 0.970, 1.018, 1.080, 1.034 and 1.039 eV in the photoluminescence spectra observed from pulled, float zone, and Lopex silicon implanted at room temperature with 150 keV boron and phosphorus ions to fluences from 1012 to 1015 ions/cm2 are reported. Data is presented describing the effects of annealing, fluence, ion species and substrate on these lines and defect models are proposed for the recombination centers.
EPR studies in neutron-irradiated silicon: a negative charge state of a nonplanar five-vacancy cluster (V$sub 5$$sup -$)
EPR studies are carried out for the float-zone intrinsic silicon irradiated with reactor neutrons up to the total fluence l0/sup 18/ n/cm/sup 2/. Details of the Si/sup 29/ hyperfine structure and of the g tensor in the P-1 spectrum are observed with respect to temperature from 77 to 350 deg K. The anisotropy of the g tensor and its continuous variation with tempratures are also discussed in terms of simple linear-combination-of-atomic-orbitals molecular orbitals and of the experimental results on the resonant wave function. In particular, the motional effect due to the electron-hopping between equivalcnt defect sites proposed by Nisenoff and Fan is not supported by these expriments, but an unusual thermal effect is observed in which the resonant-electron wave function is an average of both a ground and excited states, with the relative populations being proportional to the Boltzmann factor. The resonance properties of the pure ground state and pure excited state differ, which causes the g and A tensors to continuously vary with temperature and brings about a line broadening and narrowing in the hyperfine satellites as well as in the central lines. The line width broadening of the hyperfine lines is discussed on the basis that it ismore » mainly due to transitions between the ground and excited electronic states. Based on the present results, a defect model for this center is established: a negative charge state of a non-planar five-vacancy cluster. (auth)« less