Low threshold current MOVPE grown GaInAs-Al(Ga)InAs separate confinement heterostructure multiquantum well metal-clad ridge-waveguide lasers emitting at 1585 nm
GaInAs-Al(Ga)InAs separate confinement heterostructure (SCH) multiquantum-well (MQW) metal-clad ridge-waveguide (MCRW) laser diodes were successfully fabricated for the first time from layer structures grown by atmospheric pressure (AP) metalorganic vapor-phase epitaxy (MOVPE) on InP substrate without any use of phosphine. CW operation of 2.9- mu m-wide and 400- mu m-long MCRW laser diodes emitting at 1585 nm was demonstrated with a minimum threshold current of 38 mA.<<ETX>>
1.57 mu m strained-layer quantum-well GaInAlAs ridge-waveguide laser diodes with high temperature (130 degrees C) and ultrahigh-speed (17 GHz) performance
The fabrication of GaInAlAs strained-layer (SL) multiple-quantum-well (MQW) ridge-waveguide (RW) laser diodes emitting at 1.57 mu m is discussed. Due to an optimized layer structure, a very high characteristic temperature of 90 K was obtained. As a consequence for episide-up mounted devices, the maximum continuous wave (CW)-operation temperature is 130 degrees C. At room temperature, a maximum output power of 47 mW was measured for 600- mu m-long lasers with one high-reflection coated facet. The low series resistance of 4 Omega (2 Omega ) for 200- mu m-(400- mu m)-long devices yields an ultrahigh 3-dB bandwidth of 17 GHz. These static and dynamic properties also result from a high internal quantum-efficiency of 0.83 and a high differential gain of 5.5*10/sup -15/ cm/sup 2/.<<ETX>>
Compositional dependence of band‐gap energy and conduction‐band effective mass of In1−x−yGaxAlyAs lattice matched to InP
The band‐gap energy and the electron effective mass of In1−x−yGaxAlyAs lattice matched to InP have been determined as a function of Al content. From photoluminescence measurements we obtain Eg(eV) = (0.76±0.04)+(1.04±0.10)y+(0.87±0.13)y2. The electron effective mass is determined from the plasma frequencies measured with Raman scattering in n‐type samples. Its compositional dependence is given by m* = (0.0427±0.0015)+(0.0683±0.0007)y.