Improvement of electron diffusion lengths in polycrystalline silicon wafers by aluminium
In order to improve the electron diffusion lei wafers, an aluminium layer was deposited on the back sul 2 h. It was found that Ln is increased, provided the initi; density of dislocations is larger than 5 x 104 cm-2. Backsig to explain the results and it is assumed that dissolved c
Role of impurities on diffusion‐induced defective states
The defective states induced in floating zone Si by the heavy diffusion of dopants have been investigated by means of the electron beam‐induced current method. By measuring the minority carrier diffusion length with the first order moment method, and by directly imaging the defects, their electrical activity has been analyzed. The diffused samples have subsequently been dry oxidized, so that the evolution of the electrical and morphological properties of the induced defects could be followed. Two sets of samples, one diffused with B and the other with B and Al, have been investigated in order to study the effects of the presence of Al. Significant improvements in the diffusion length have been observed in samples where Al had been codiffused, thus providing indication for the role played by Al on the electrical activity of bulk defective states.
Direct evidence for the single cell origin of mouse liver cell tumours.
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