Dyeing behavior of atmospheric dielectric barrier discharge AR-O 2 plasma treated poly (ethylene terephthalate) fabric
Low-pressure glow discharges are efficient in generating uniform plasmas. They have been applied in surface modification of varieties of materials. But most of these applications are limited to small-scales because of their reliance on vacuum equipments needed to sustain processes at low pressure. This work aims at commending a continuous surface treatment device, which meets the requirement of textile material surface modification by dielectric barrier discharge (DBD) at atmospheric pressure for industry production. In the experiment, quasi-glow-discharge, a glow-discharge like plasma, is produced under atmospheric pressure with the continuous simple device. Through the discharge of mixture of argon and oxygen, Ar-O2 (10:1), polyester fabric is continuously modified. The results reveal that the dyeability of the polyester fabric is dramatically improved. The spectral value (K/S) of the dyed polyester fabric is increased by about 50 %, and the relative dye up-take is also increased by about 18% after the treatment. The dyeing fastness of the modified material remains the highest degree. That is to say, the improvement of the dyeability does not degrade the dyeing fastness of the material at all. The study of scanning electron microscope (SEM) shows that the smooth and glossy surface of polyester fiber becomes rough after the treatment. The X-ray photoelectron spectroscopy (XPS) illustrates that Ar-O2 (10:1) discharge can help generate a few carboxyl groups in the polyester fiber surface. The improvement of dyeability is attributed to the reaction of coarsenization and the introduction of functional groups in the surface during the treatment. Producing approximately uniform plasma in simple operation and achieving satisfying surface modification of textile material, this kind of device would play an active role in the future technological textile industry.
From ozone generators to flat television screens: history and future potential of dielectric-barrier discharges
Abstract
Direct photochemical deposition of SiO2 from the Si2H6+O2 system
Silicon dioxide films have been prepared by the direct photolysis of disilane with oxygen at temperatures as low as 150 °C. The photochemical deposition rate at temperatures below 300 °C has an activation energy of 0.53 eV, which is appreciably lower than the activation energy of 0.96 eV obtained for the thermal chemical vapor deposition (CVD). The infrared absorption peaks due to the SiH and SiOSi stretching modes in the photo‐CVD SiO2 matrix always appear at higher wave numbers than those in thermal CVD films. This is interpreted in terms of the densification of the SiO2 network through photochemical reactions.