Simulation of the ribbon-shaped electron beam of the diode electron-optical system of microwave devices
Complex numerical simulation of the ribbon-shaped electron beam, which is formed by the diode electron gun with magnetic field focusing was conducted. Analysis of the beam formation dynamics in longitudinal and cross-section as well as the results of calculation of the separate electron trajectories agree with experimental data, obtained previously by using of the method of electron beam diagnostics by means of transient radiation.
The problem of ribbon electron beam modeling
The three-dimensional model and algorithm of numeral calculation of electric field intensity is offered in a diode gun, and calculation of current density in the cross-sections of ribbon electron beam is carried out. The emission nonuniform, power and angular dispersion, electrons settling on electrodes are taken into account during calculations.
Anomalous Annealing Behavior of Arsenic Implanted Silicon as a Function of Dose and Energy
Anomalous annealing behavior of damage in As implanted Si has been investigated by channeling effect measurements. Room temperature As implants with doses from 1014 to 2 × 1016cm-2 at energies ranging from 50 to 250 keV into Si were annealed over the range of 600°C to 1100°C. Anneal temperatures ≥ 950°C reduce the disorder for ion doses of 0.5 to 1 × 1016 cm-2 at energies between 50 and 250 keV. Anomalously high residual disorder was found for the intermediate doses of 2 × 1014 to 2 × 10/cm2 implanted above 100 keV. For this intermediate dose, annealing of implants performed at liquid nitrogen temperatures did not show significant reduction in this damage. However implants at 200° to 300°C indicate a lower amount of damage compared to the room temperature implants.