Development of an active-matrix "HEED" cold cathode and its application to an image sensor
For practical advantages of the HEED (high-efficiency electron emission device) such as a low driving voltage, a high emission current density, especially application to an ultra high sensitive compact image sensor can be expected. A prototype active-matrix HEED image sensor integrated with scanning driver circuits was developed with a HARP (high-gain avalanche rushing amorphous photoconductor) target. It was demonstrated that the prototype 256 times 192 pixels active-matrix HEED array operates well as an effective probe for high-resolution image pickup under dim lighting. The possibility of the active-matrix HEED for development of next-generation image sensor with ultra high sensitivity and high definition was concluded in this report
High Efficiency Electron-Emission in Pt/SiOx/Si/Al Structure
A high efficiency electro-emission device (HEED) has been developed with a structure of Pt/SiOx /Si/Al on a thermally-oxidized Si substrate. The thicknesses of the SiOx and Si films were 400 nm and 5 µ m, respectively. Electron emission characteristics of the HEED are reported. It was found that the HEED has an electron-emission efficiency as high as 28% and a high brightness of 80 kcd/m2 using phosphor ZnS:Cu,Al. This high electron-emission efficiency was obtained in a range of applied voltage in which negative resistance occurred.
SR topography of plastically deformed Fe-Si bicrystals - observation in situ and post mortem
SR reflection topography was applied to study the interaction of slip dislocations with the grain boundaries in Fe-4at%Si bicrystals deformed by compression. Three experimental settings with either a white or monochromatic beam were used and the corresponding orientation contrast analysed. Dislocation transmission through the grain boundary was observed in bicrystals with favourable geometry of the slip systems.