Fabrication and Characterization of Si Substrate-Free InGaN Light-Emitting Diodes and Their Application in Visible Light Communications
Visible light communications with InGaN-based light-emitting diodes (LEDs) grown on large-diameter (6-inch) and cost-effective Si (111) substrates are investigated experimentally. During epitaxial growth, the transition layers consisted of the step-graded AlGaN buffers incorporated with three low-temperature-grown (∼900 °C) AlN interlayers on AlN/Si substrates that are used to compensate for thermally induced tensile stress and to maintain a reasonable crystalline quality of GaN-on-Si LEDs. Strong light absorption from Si can be prevented by fabricating a Si substrate-free InGaN LED with a composite metal coating of Al/Ag/Al multilayer, providing improved adhesive strength and reflectivity comparable to the unitary Ag film. In comparison with GaN-on-Si LEDs, stripping Si substrates combined with the use of a highly reflective bottom mirror (Al/Ag/Al multilayer) reflected a more intense emission pattern corresponding to a 2.2 times (@ 190 mA) increase in light output power in thin-film LEDs. In addition, a 1.8 times (@ 160 mA) increase in optical channel bandwidth is achieved by using thin-film LEDs as optical transmitters. A direct line-of-sight optical link using the proposed thin-film LEDs achieved data transmission rates of up to 100 Mb/s over a distance of 100 cm, indicating that the proposed LEDs have potential for use as optical transmitters in indoor visible light communications.
An approach to determine the chemical composition in InGaN/GaN multiple quantum wells
In this paper, an approach to determine the average In composition in InGaN/GaN multiple quantum wells (MQWs) was suggested. The period thickness and the average lattice constants (〈aepi〉 and 〈cepi〉) of MQWs were calculated from high-resolution X-ray diffraction (HRXRD). Then by applying the Vegard's law, the average In composition 〈x〉 was simultaneously determined by considering the relationship between the lattice constants under strain. At the same time, by using the period thickness, the average In composition was obtained from the simulation of the Rutherford backscattering spectroscopy (RBS). The results obtained from the two techniques are agreeable. So the approach of combining both HRXRD and RBS can tell reliable chemical composition in InGaN/GaN MQWs.
Mesozoic rifting and basin inversion along the northern African Tethyan margin: an overview
Abstract The northern African Tethyan margin registered three major rifting episodes from the latest Palaeozoic-earliest Mesozoic to the earliest Cenozoic. Break-up of Gondwana was initiated in the late Carboniferous. Along the northern African-Arabian plate margin rifting propagated westward from the northeastern Arabian margin to Morocco during the Permian and Triassic, and was accompanied by Mid-Late Triassic-earliest Liassic extensive alkaline flow basalts. Rifting continued during the Liassic, e.g. in the Moghrebian Atlas troughs. A second stage of rifting occurred in the Late Jurassic and continued into, or was rejuvenated during, the Early Cretaceous. Along the east Mediterranean margin, some large E-W trending rifts formed, often with associated volcanism, e.g. southern Sirt and Abu Gharadig. Most researchers believe the oceanization of the eastern Mediterranean basin occurred at this time. Flexural subsidence affected the Moghrebian Atlas, including the Riffian-Tellian domain, where a thick flysch series was deposited. Two short-lived, but widespread and tectonically important, compressional or wrench-dominated events occurred during the Santonian and the latest Maastrichtian. From Morocco to Oman, most sedimentary basins were folded and inverted at these times. The Santonian event resulted from onset of the collision between the African-Arabian and Eurasian plates. New stress-fields favoured NE-SW extension along the African plate margin, generating or rejuvenating some rifts, e.g. in the Euphrates trough and in the Libya-Tunisia region (northwestern Sirt, Pelagian Sea). Rifting and magmatism continued in these regions into the Paleocene. During the Mesozoic, therefore, the northern margin of the African-Arabian plate registered both rifting resulting in the oceanization of the Tethys and rifting resulting from the initiation of the closure of the Tethys. The intraplate domain exhibited echoes of the tectonic events affecting the margin.