Laser-induced diffraction patterns in germanium diselenide amorphous films.
We report the characterization of changes produced on germanium diselenide amorphous semiconductor thin films by a focused He-Ne laser beam. The diffraction pattern produced by the laser spot on the sample is studied as a function of the intensity and the irradiation time. At low intensities the state of polarization of the incident beam generates an asymmetry in the induced diffraction pattern. Moreover, if the polarization of the incident beam is rotated, the corresponding asymmetry rotates as well. These results show the difference between thermal and electromagnetic effects on the material. This system may be used as a high density recording medium.
Polarization-dependent photoinduced mechanical deformations in covalent chalcogenide glasses
The optomechanical effect and photoinduced anisotropic deformation induced by illumination of linearly polarized light have been comparatively studied for glassy As2S3 and Se films. The two materials show qualitatively the same behaviors in the mechanical effect and the deformation, which suggests that these photoinduced phenomena are inherent to the covalent chalcogenide glass. But, the two phenomena show different dependences upon intensity, spectrum and exposure time of excitation light, which imply different underlying mechanisms.
Fragment Rotational State Distributions From The Dissociation Of NeIBr: Experimental And Theoretical Results
The IBr fragment rotational state distributions that result when the NeIBr van der Waals molecule undergoes vibrational predissociation have been measured in a pump–probe laser‐induced fluorescence experiment. Independent of initial vibrational state and the number of quanta of vibrational energy lost from the I–Br coordinate, the rotational distributions extend over the full range of energetically accessible states. From the observation of energetic constraints on the rotational distribution, the dissociation energy (D0) is calculated to be 65.5±1.2 cm−1 for the A electronic state, v=16. For the X electronic state, v=0, D0=71.8±1.2 cm−1. Quantum mechanical bound state calculations carried out on a model A electronic state potential energy surface are in quantitative agreement with this result. The rotational distributions are broader than that predicted by either a Franck–Condon or classical impulsive model for the dissociation. The distributions are qualitatively in accord with classical trajectory calc...