A Conductivity Modulated Polysilicon Thin-Film Transistor
This paper reports a novel high voltage Conductivity Modulated Thin-Film Transistor (CMTFT) fabricated using polycrystalline silicon. The transistor uses the idea of conductivity modulation in the offset region to obtain a significant reduction in on-state resistance. Experimental on-state and off-state current-voltage characteristics of the CMTFT have been compared with those of the conventional offset drain device. Results show that the CMTFT has six times to more than three orders of magnitude higher on-state current handling capability for operating at drain voltages ranging from 15 V to 5 V while still maintaining low leakage current and providing even faster switching speed. The CMTFT devices can be fabricated using a low temperature process (620/spl deg/C) which is highly desirable for large area electronic applications.<<ETX>>
A conductivity modulated high voltage polycrystalline silicon thin film transistor with improved on state and transient performance
A novel high voltage polycrystalline silicon thin film transistor, with an improved on state and transient performance, is presented in this report. The key features of the new structure are the combination of a p/sup +/ drain and a semi-insulating field plate which connects the gate to the drain. Minority carrier injection from the p/sup +/ drain increases the on state current by a factor of 5 and reduces the 'turn on' time by over 10%. The minority carrier injection effects decay over sub-microsecond time scales.
Testing digital circuits using a Mixed-Signal Automatic Test Equipment
This paper presents the results of parametric testing of digital ICs using a dedicated Mixed Signal Automatic Testing Equipment. Due to the prohibitive price of the ATE equipment and dedicated Device Interface Board (DIB) for digital Integrated Circuits (ICs), a DIB for analog circuits was used to perform the testing. Despite the challenges presented by the experiments, the results prove to be accurate for the performed tests, according to the data sheet of the digital ICs and production test data provided by the manufacturer.