Low threshold current MOVPE grown GaInAs-Al(Ga)InAs separate confinement heterostructure multiquantum well metal-clad ridge-waveguide lasers emitting at 1585 nm
GaInAs-Al(Ga)InAs separate confinement heterostructure (SCH) multiquantum-well (MQW) metal-clad ridge-waveguide (MCRW) laser diodes were successfully fabricated for the first time from layer structures grown by atmospheric pressure (AP) metalorganic vapor-phase epitaxy (MOVPE) on InP substrate without any use of phosphine. CW operation of 2.9- mu m-wide and 400- mu m-long MCRW laser diodes emitting at 1585 nm was demonstrated with a minimum threshold current of 38 mA.<<ETX>>
Low threshold current GaInAs/AlInAs ridge MQW lasers with InP cladding layers
GaInAs/AlInAs ridge MQW lasers with InP cladding layers were fabricated by molecular beam epitaxy. The threshold current is as low as 60 mA and the lasing wavelength is 1.52 mu m under pulsed conditions. The use of InP cladding layers made it possible to realise narrow-stripe-width ridge MQW lasers with low threshold currents. The characteristic temperature T/sub 0/ is 88 K, which was greater than those reported for GaInAsP double heterostructure lasers in the 1.5 mu m wavelength region. >
Two-dimensional electronic systems for high-speed device applications
Abstract The use of two-dimensional electron gas in electronic devices leads to improved performance through reductions in scattering, confinement of the electron current to a well-defined sheet, and from tailor-made adjustments of the electronic bandstructure. These new structures have resulted in dramatic reductions in room temperature device switching time and power consumption compared to classic design. We will review the physics of the operation of this new class of devices and compare results obtained in AlInAs/GaInAs heterostructures which have the highest two-dimensional electron velocity and 300 K mobility, with AlGaAs/GaAs heterostructures which have been the subject of more extensive fundamental and applied investigations.