Transferring porous layer from InP wafer based on the disturbance
We present a new method to transfer the three dimensional (3D) porous layer from InP wafer based on the disturbance, during electrochemical etching of n-InP (100) with chronopotentiometry with current ramp in 3 mol-L−1 NaCl solution. The potential bursting phenomenon was observed due to the disturbing instantaneously. In addition, the correlation between the amplitude of the potential and the porous layers separated from the InP wafer was discussed.
Photoluminescence of porous indium phosphide: Evolution of spectra during air storage
The results of studying the nature of the porous indium phosphide visible photoluminescence are presented in the paper. The nature of PL bands in the spectrum visible portion is described using the quantum-confined approach. The por-InP PL spectra after exposure to air for 3 months were studied. As a result, additional bands appear due to the skulling of pore walls with oxides.
Photoreflectance characterization of vanadium-doped GaAs layers grown by metalorganic vapor phase epitaxy
Abstract We characterized the vanadium-doped (GaAs:V) layers grown on GaAs substrate by metalorganic vapor phase epitaxy. The conductivity of the samples is checked by the Hall effect measurements, and it is n type with electrons concentration ranging from 2×10 13 to 2×10 17  cm −3 . We used the photoreflectance technique (PR) to study the effect of vanadium doping on the optical properties of GaAs. Our experimental results show that the built-in electric field F and the broadening parameter Γ 0 increase with V-doping concentration. Furthermore, the temperature dependence of the built-in electric field and the broadening parameter of GaAs:V samples have been investigated by PR. It has been observed that these parameters increase with increasing temperature. The decrease of the built-in electric field with decreasing temperature is due to the photovoltage effect.We characterized the vanadium-doped GaAs (GaAs:V) layers grown on GaAs substrate by metalorganic vapor phase epitaxy.