A New Isolation Process for VLSI Devices
In this paper we present a new zero-bird's beak process which, with an additional photolithographic step, substitutes the thermal fully-recessed field oxide for a CVD oxide. With this process we have fabricated devices which present a very small narrow channel effect. Moreover, the use of a reference mask increases the process reproductivity and reduces the probability of the double-threshold voltage effect. The cross-section and electrical results are presented.
Double threshold MOSFETs in bird's-beak free structures
Edge effects found in MOSFET channels fabricated by a new bird's-beak-free process are studied by two-dimensional simulation. Test devices are also fabricated using the side wall masked isolation (SWAMI) process, and electrical characristics are measured. At the sharp corners of active- to field region boundaries, threshold lowering occurs because of electric field concentration. The effective channel width associated with the threshold voltage is very narrow ranging from 0.05 um or less to 0.3 um. Both the threshold and the effective width depend on the shape of the corner, and have weaker dependence on the substrate and surface impurity concentrations and substrate bias, than those of the planar surface devices. The optimization of MOS devices with bird's-beak free structure for conventional applications with very tight design rules is discussed. A three-transistor static memory cell utilizing the double threshold (DT) MOST is proposed and analyzed.
The Hollywood War Machine: U.S. Militarism and Popular Culture
CONTENTS Preface Chapter One: Media Culture in the Imperial System Chapter Two: Militarism in American Popular Culture Chapter Three: War and Cinema: The Historical Legacy Chapter Four: The Vietnam Syndrome: Politics and Cinema Chapter Five: Recycling the Good War Chapter Six: Cinematic Warfare in the New World Order Chapter Seven: Hollywood After 9/11