Electrical properties of lead telluride single crystals doped with Gd
Temperature dependences of electric conductivity, free carrier concentration and mobility in single-crystalline PbTe: Gd samples with a varied impurity content are investigated. The features of electron transport in PbTe: Gd may be caused by a variable gadolinium valence. The striking result from the Seebeck coefficient measurements is that the thermoelectric power factor increases dramatically. Measurements of the magnetic susceptibility at low temperatures permit us to suggest that Gd ions exist in different charge states.
Transport and Magnetic Properties of Pb_{1-x}Mn_xTe Doped with Cr and Mo
A.I. Artamkin, A.E. Kozhanov, M. Arciszewska, W.D. Dobrowolski, T. Story, E.I. Slynko, V.E. Slynko and D.R. Khokhlov M.V. Lomonosov Moscow State University Vorobjevy Gory, 1, Moscow 119992, Russia Institute of Physics, Polish Academy of Sciences al. Lotników 32/46, Warsaw 02-668, Poland Chernovtsy Division of Institute of Problems of Semiconductor Material Science National Ukrainian Academy of Sciences, I. Vilde, 5, Chernovtsy 274001, Ukraine
Effect of illumination and magnetic fields on the electron transport properties of Pb0.75Sn0.25Te doped with indium
Electrical transport measurements between 300 and 1.5 K were made on two Pb0.75Sn0.25Te films doped approximately 0.5 at. % indium. The Hall mobility, Hall coefficient, and resistivity display an unusual temperature dependence relative to those of undoped PbSnTe which suggest a phase transition at approximately 18 K. These samples also exhibit high photosensitivity below 21 K where slowly relaxing and persistent photoconductivity was observed. Time constants for the photoconductive relaxation were found for temperatures between 8 and 19 K. The application of a magnetic field during sample cooldown had a large effect on the zero‐field resistivity of the sample at 4.2 K.