Retarding field energy analyzers for the ion temperature measurements in the SOL plasmas of the tokamak ISTTOK and the TJ-II stellarator
Measurements of the ion temperature in the plasma boundary of fusion devices typically employs the Retarding Field Analyzer (RFA) that is based on selective rejecting or retarding the plasma ions by a varying braking electric field. Normally, the RFA comprises an input slit and collector electrode with two or more separately biased fine grids placed in front of it. With an assumption of Maxwellian ion distribution, the exponential decay of the RFA collector currentvoltage characteristic is determined by the ion temperature. This contribution describes 1- and 3channels RFAs for the ion temperature measurements in the scrape-off-layer of the tokamak ISTTOK and the TJ-II stellarator. Selected results of the ion temperature measurements on the ISTTOK and the TJ-II are presented. In addition, limitations related to the RFA operation (including the alignment along magnetic field direction and plasma loading) are considered.
Measurements of ion energies in the tokamak plasma boundary
Abstract Measurements of ion energies in the boundary of tokamak plasmas in L-mode discharges and during ELMs are reviewed. A profile of the ion-to-electron temperature ratio T i / T e from the edge of the confined plasma into the scrape-off layer (SOL) is produced by compiling the available T i measurements. The picture that emerges is that in the SOL, as well as in the edge, T i is systematically higher than T e (ratios up to 10 just outside the last closed flux surface) for most plasma parameter regimes. Far SOL ELM ion energies measured in JET, and more recently in MAST and AUG, agree with the models of the ELM transients, providing strong evidence that ELM ions can reach the first wall with significant fraction of the pedestal energies.
Selective etching of InP in NaF solution
Abstract The crossing porous structure of InP has been obtained by electrochemical etching in NaF solutions. The behavior of the periodic oscillation occurs at different potential ranges for the different concentrations of solutions, and it will disappear with the concentration of the solution decreased. The scanning electron microscope (SEM) image shows that the pores have two directions on the surface and are perpendicular to each other. The two directions are assigned to [0 1 1] and [ 0 1 ¯ 1 ], respectively. The SEM image of the cross-section also shows that the two directions are assigned to [1 1 1]B and [ 1 1 ¯ 1 ¯ ]B. Both are due to the selective etching of F− ions. The crossing porous structure of InP is a very promising feature for the three-dimensional structure of III–V compound semiconductors for photonic band gap materials.