Applications of new technology in power substations
The authors describe the applications of some of the more modern technologies to instrument designed specifically to operate in utility substation environments. Particular emphasis is placed on the use of CMOS logic, processor, and memory circuits, high-density flexible magnetic disk media, and high-capacity Winchester technology storage devices. The operating history of a number of units over a five-year period is reported, as well as the steps taken to protect these devices in a hostile environment. In addition, areas requiring specific improvement and adaptation are noted.<<ETX>>
Microprocessor-based substation control
Abstract This paper describes a new approach to automating power substations. The current methods involved in the operation and control of substations are discussed and the basic functions involved are identified. The concept of integrating all these functions into one microprocessor-based control system is developed. The integrated microprocessor design presented in this paper eliminates the need for the presently used local controllers and other devices, leading to a cost-effective and highly reliable central substation controller.
Wafer Bonding and Layer Splitting for Microsystems
In advanced microsystems various types of devices (metal-oxide semiconductor field-effect transistors, bipolar transistors, sensors, actuators, microelectromechanical systems, lasers) may be on the same chip, some of which are 3D structures in nature. Therefore, not only materials combinations (integrated materials) are required for optimal device performance of each type but also process technologies for 3D device fabrication are essential. Wafer bonding and layer transfer are two of the fundamental technologies for the fabrication of advanced microsystems. In this review, the generic nature of both wafer bonding and hydrogen-implantation-induced layer splitting are discussed. The basic processes underlying wafer bonding and the layer splitting process are presented. Examples of bonding and layer splitting of bare or processed semiconductor and oxide wafers are described.