Simulation study on influence of interface trap position in Sii-xGex Gate-All-Around (GAA) field-effect transistor
In this paper, performance degradation of Si1−xGex gate-all-around (GAA) Field-Effect Transistor (FET) depending on interface trap position was investigated through TCAD simulations. Interface traps were located at three different points along the channel. Parameters such as hole mobility and energy band were analyzed to understand the effects of partially generated interface traps by unstable GeOx.
Selective GeOx-scavenging from interfacial layer on Si1−xGex channel for high mobility Si/Si1−xGex CMOS application
We demonstrate a technique for selective GeO<sub>x</sub>-scavenging which creates a GeO<sub>x</sub>-free IL on Si<sub>1-x</sub>Ge<sub>x</sub> substrates. This process reduces N<sub>it</sub> by >60% to 2e11 and increases high-field mobility at N<sub>inv</sub>=1e13 cm<sup>-2</sup> by ~1.3× in Si<sub>0.6</sub>Ge<sub>0.4</sub> pFETs with sub-nm EOT.
Migration, Labor Mobility, and Relocation Assistance: The Case of the American Indian
This article, an example of "indirect" program evaluation, utilizes a 1/100 public use sample of American households from the 1970 U.S. census to examine family welfare levels among three categories of Indian families: (1) nonmigrant families living in traditional areas of Indian population concentration; (2) families in areas not receiving relocation assistance through the Bureau of Indian Affairs (BIA); and (3) migrant families moving to urban areas with BIA relocation assistance. The article concludes that the population of migrants receiving relocation assistance has a substantially higher level of economic welfare in both absolute and relative terms and that earnings are the principal source of increased welfare. It is suggested that such assistance might be utilized on a wider basis to assist other migrating populations.