Fault tree analysis on kinematic accuracy of wafer stage using BDD and DFTA technique
Based on the structure and operation mechanism of the dual-stage lithographic system, fault tree analysis for the key subsystem, wafer stage, is performed. Since the system is very complexity, the BDD (binary decision diagram) and DFTA (dynamic fault tree analysis) technique are introduced to make up the disadvantages of the traditional static FTA (fault tree analysis) method. Event “The kinematic accuracy of wafer stage can't meet the goal” is installed as the top event of the fault tree. Central factors affecting the kinematic accuracy of the wafer stage is identified through the study.
Synthesis Method for Dynamic Fault Tree Analysis
A Synthesis Method for Dynamic Fault Tree analysis is introduced in this paper. Independent static sub-trees and dynamic sub-trees are recognized from complex dynamic fault tree through the depth first left most argotic algorithm. Then static sub-trees are analysized using BDD and dynamic sub-trees using Markov theory separately. Finally integrate the result to gain the topevent occurrence rate of the whole dynamic fault tree .
Interactions of ion beams with surfaces. Reactions of nitrogen with silicon and its oxides
Ion beam studies of chemical reactions between nitrogen and surfaces of silicon and its oxides are reported. A spectrometer system designed for these studies which combines the techniques of x‐ray and uv photoelectron spectroscopy, Auger electron spectroscopy, secondary ion mass spectroscopy, low energy electron diffraction, and ion bombardment is described. This work employs XPS and UPS to examine the products induced by 500 eV N+2 beams on targets of elemental Si, SiO, and SiO2. The N+2 ions undergo charge exchange and dissociation at the surface of the target to form hot N atoms. Reaction with Si, produces nitrides which are similar to those of the type Si3N4. Reaction with SiO and SiO2 forms nitrides, with no evidence of nitrate or nitrite formation. The chemical nature of the reaction is suggested by identification of the reaction products through XPS and UPS and energy level shifts. The thickness of the silicon nitride layer on Si(111) formed by 500 eV N+2 bombardment has been determined to be ∼19 A...