Physical Properties of Nanostructured CdO Films from Alkaline Baths Containing Saccharin as Additive
Nanostructured cadmium oxide (CdO) films were fabricated on glass substrates from alkaline baths containing saccharin as an additive by a successive ionic layer adsorption and reaction (SILAR) method. The effects of saccharin concentration in the bath on the structural, morphological, and optical properties were studied by means of scanning electron microscopy (SEM), X-ray diffraction (XRD), photoluminescence, and Raman spectroscopy. The analyses showed that the surface morphologies, XRD peak intensities, Raman spectroscopy, and photoluminescence properties of CdO films changed with saccharin concentration. From the results, it can be said that morphological characteristic and optical properties of the films could be calibrated by adding various saccharin percentages in the growth bath.
Optoelectronic properties of CdO/Si photodetectors
Abstract CdO/Si heterojunctions were fabricated by depositing CdO polycrystalline thin films on p-type single crystalline silicon wafers by CBD. The current–voltage characteristics under dark and illumination of CdO/Si devices resemble those of a light sensitive diode. From the CdO/Si diode spectral sensitivity curves (A/W), it has been implied that CdO films allow a high sensitivity response in the visible and the near infrared regions.
Highly transparent and conducting CdO films grown by chemical spray pyrolysis
Thin films of CdO have been deposited using a spray pyrolysis process and the physical properties investigated for the layers deposited using different substrate temperatures. The techniques used to investigate the layers include X-ray diffractometry, scanning electron microscopy, transmittance and reflectance vs. wavelength measurements, and Van der Pauw measurements. Single-phase layers of CdO were produced for substrate temperatures >175 °C, but the most transmissive layers with the lowest values of resistivity were obtained for layers grown at 200 °C. The high figure of merit of these layers (1.02×102 Ω−1) means that they could find application in large-area electronic devices.