Compact Coaxial Filters for BTS Applications
A new class of coaxial cavity filters with low-profile suitable for base transceiver station applications is proposed. The benefits of the technology are volume reduction, high performance, and superior spurious-free response. An equivalent lumped element circuit allows for a fast and efficient initial design of the resonators. Full-wave optimization is required to produce the final configuration of the filters. Experimental results demonstrate the high performance of the proposed filters. The electrical length of the experimental resonators is as low as  $\lambda _{0}/16$ . The measured insertion loss of the five-pole filter is 0.92 dB at 722 MHz. Experimental results show a spurious-free response of the order of 7.6 times.
Miniature bandpass filter with a wide stopband up to 40F0
A 243‐MHz narrowband filter with high selectivity performance has been designed. The filter comprises two electromagnetically coupled quasi‐lumped resonators placed into a metal case. Each resonator consists of a tubular capacitor connected in series between two tubular conductors. The measured frequency response of the fabricated filter is presented. © 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 54:1117–1118, 2012
Selective etching of InP in NaF solution
Abstract The crossing porous structure of InP has been obtained by electrochemical etching in NaF solutions. The behavior of the periodic oscillation occurs at different potential ranges for the different concentrations of solutions, and it will disappear with the concentration of the solution decreased. The scanning electron microscope (SEM) image shows that the pores have two directions on the surface and are perpendicular to each other. The two directions are assigned to [0 1 1] and [ 0 1 ¯ 1 ], respectively. The SEM image of the cross-section also shows that the two directions are assigned to [1 1 1]B and [ 1 1 ¯ 1 ¯ ]B. Both are due to the selective etching of F− ions. The crossing porous structure of InP is a very promising feature for the three-dimensional structure of III–V compound semiconductors for photonic band gap materials.