High-efficiency and low dark current crystalline selenium-based heterojunction photodiode with a high-quality tellurium nucleation layer
In this study, a high-efficiency and low dark current thin-film crystalline selenium (c-Se)/gallium oxide (Ga2O3) heterojunction photodiode is demonstrated via improving the deposition conditions for the tellurium nucleation layer that prevents the peeling of the selenium film during annealing. The highly (100)-oriented polycrystalline selenium film is grown by employing a thin tellurium (Te) nucleation layer with high-quality crystallinity. The device exhibits high external quantum efficiency in the visible region and extremely low dark current that is below 100 pA/cm2 at a reverse-bias voltage of 15 V at room temperature. The result indicates the high potential of crystalline selenium-based photodiodes to be used as photoconversion layers in imaging devices.
High sensitivity image sensor overlaid with thin-film crystalline-selenium-based heterojunction photodiode
We have developed a stacked image sensor based on a thin-film crystalline selenium (c-Se) heterojunction photodiode. Uniform c-Se-based photodiodes laminated on complementary metal-oxide-semiconductor circuits were fabricated by tellurium-diffused crystallization. We herein present the first high-resolution images obtained with such a device. Furthermore, the dark current was significantly decreased by using an n-type wide-band-gap gallium oxide (Ga2O3) layer with a high hole-injection barrier.
Natural history and long‐term evolution in families with autosomal dominant cortical tremor, myoclonus, and epilepsy
Purpose:  To investigate for the first time the natural history and long‐term evolution of “familial cortical tremor, myoclonus, and epilepsy.”