Performance degradation simulation of electronic product for reliability analysis
To study analysis method of performance degradation during long term operation based on function simulation, accelerated degradation test was carried out on the power supply module directly, and the test data was used for reliability analysis. As the same time, accelerated degradation test was carried out on the key components in power supply circuit. The test data was injected into the functional simulation model of power supply to simulate performance degradation and analyze reliability. Finally the results of the two kinds of analysis were compared to demonstrate the effectiveness of the proposed simulation method. Comparison shows that average life span of power supply is 281560 hours based on accelerated degradation test while 357290 hours based on degradation simulation. Since only considering degradation of the key components, the result of simulation method is of partial optimism. But the deviation is in a reasonable range, which proved that the method is effective.
Research on Reliability Assessment Method of Electronic Equipment Based on Multi-stress ADT
In order to deal with the performance degradation of electronic equipment affected by various environmental stresses in actual use,this paper conducts an accelerated degradation test(ADT)under the integrated stress of temperature-humidity-electricity with the printed circuit board(PCB)of a type of radar as experimental subject.It analyzes the general performance degradation trend of electronic equipment under multi-stress,models the degradation data and performed a reliability analysis of the test samples under power continuous and power on/off modes respectively.It also carries out a comparative analysis and verified the fact that power switching is an important factor for the reliability of electronic products.The paper establishes a multiple stress accelerated model which effectively solved the difficult problem of modeling and performing complex reliability assessment under multi-stress.The results show the accelerated test method under multi-stresses is more close to the environment of actual equipment use,and the effect of accelerated performance degradation is more obvious.Furthermore,this test method can also raise test efficiency and reduce cost.
Fully Integrated Bidirectional CMOS-MEMS Flow Sensor With Low Power Pulse Operation
Leveraging More-than-Moore technology, we demonstrate an integrated CMOS MEMS flow sensor via a very compact system on chip (SoC) that can sense the bidirectional N2 gas flow. Our SoC features a very low-noise instrumentation amplifier that is implemented on a CMOS wafer and serves as a readout integrated circuit for a thermoresistive micro-calorimetric flow sensor which is fabricated on a MEMS wafer. A compact heterogeneous integration is achieved by combining the two wafers via the proprietary InvenSense AlN process. The measured sensitivity of our CMOS MEMS flow sensor is 98 mV/sccm which is three times better than the state-of-the-art counterpart. The flow range measured by our SoC is from −26 to 26 m/s (from −50 to 50 sccm). Moreover, the pulsed heater operation makes this proposed SoC flow sensor a very low power (<9 mW) and, thus, a promising candidate for the Internet-of-Things applications in smart home/green buildings.