Observation and Utilization of Boron Segregation in Trench MOSFETs to Improve Figure of Merit (FOM)
We report the observation and utilization of boron segregation in trench MOSFETs (UMOS) to reduce on-resistance. A trenched LOCOS process has been applied to a UMOS structure to reduce the gate-to-source overlap capacitance (C gs), and it is observed that not only 40% reduction in C gs is achieved but also 45% reduction in specific on-resistance (R on, sp). Figure of merit is improved by 58%. TSUPREM-4 doping profile simulation at the silicon and oxide interface revealed the presence of boron segregation. On-resistance reduction is attributed by the shortened vertical channel length due to boron segregation.
A 70V UMOS Technology with Trenched LOCOS Process to Reduce Cgs
A trenched LOCOS process has been applied to a UMOS structure to reduce the gate-to-source overlap capacitance (C<sub>gs</sub>). A 40% reduction in C<sub>gs</sub> is achieved comparing to conventional UMOS, and the device's specific on- resistance R<sub>on</sub>, <sub>sp</sub> = 60 mOmegaldrmm<sup>2</sup> is observed. The improvement in device figure-of-merit (FOM = R<sub>on</sub> times Q<sub>g</sub>) is about 58%.
State estimation for integrated vehicle dynamics control
This paper discusses a vehicle controller and a state estimator that was implemented and tested in a vehicle equipped with a combined braking and chassis control system to improve handling. The vehicle dynamics controller consists of a feed forward body roll compensation and a feedback stability controller. The estimator is based on a non-linear vehicle model combined with an extended Kalman filter. The Kalman filter is also connected to an algorithm, which estimates the tyre-road friction coefficient. The developed estimator was tested in a vehicle. Good results were achieved for normal and extreme driving manoeuvers.