A simple derivation of field-effect transistor characteristics
In the conventional treatment of the field effect 
transistor, the first step is the specification 
of an impurity profile that describes the 
nature of the gate-channel contact. Solutions 
for the static and small-signal characteristics 
are then valid only for the particular 
impurity profile chosen, and must be repeated 
from the beginning for different 
structures. 
 
The purpose of this communication is to 
present a simple, though approximate, 
development of the characteristics of an 
FET without specifying the detailed nature 
of the structure. The charge-control approach is used, and it is shown that in the pinch-off region the relation between the drain current and the gate-source voltage is 
approximately square law. The results are 
applicable to all gate-channel structures, 
including the insulated gate types.
An improved FET model for computer simulators
Described is an alternative simple description of FET drain current that provides the flexibility of an extra parameter which can be chosen to approximate the Shockley expression or general power law. An empirical polynomial expression which uses only integer powers is used to provide computational efficiency. The expression gives the designer a more accurate FET model which is consistent for both large- and small-signal simulations. >
Space-Current Flow in Vacuum-Tube Structures
From well-known formulas for space-current in diodes and for amplification factor in triodes, interelectrode capacitance, plate current, and potential distribution in triodes and multigrid tubes are determined through use of the concept of planes of equivalent potential. By the same means, amplification factor in multigrid tubes is derived.