Influence of crystalline surface quality on TlBr radiation detector performance
In this study, TlBr detectors were fabricated from crystals purified by the multipass zone refining and grown by the Bridgman method. Detectors were prepared using TlBr 0.3-mm-thick wafers, with surface submitted to different mechanical and chemical treatments. Optical microscopy and scanning electron microscopy evaluated the TlBr wafers surface quality. To analyze the surface quality influence in the detector response, systematic measurements of the pulse height spectra and energy resolution were carried out for each prepared radiation detector. The radiation response for these detectors was performed under /sup 241/Am gamma radiation excitation at room temperature. The influence of the surface quality of the TlBr wafer on its performance as a radiation detector was observed.
Developing Larger TlBr Detectors—Detector Performance
Thallium bromide (TlBr) is a high atomic number (81, 35), dense (7.56 g/cm3) wide band gap (2.68 eV) semiconductor. In addition, TlBr has a cubic crystal structure and melts congruently at a relatively low temperature (~460 C). Recently, mobility-lifetime product of electrons in TlBr has been reported to be greater than 0.001 cm2/V. These properties make TlBr a promising material for room temperature gamma radiation detection. Employing device designs such as small pixel arrays that depend primarily on the motion of a single carrier type allows fabrication of thicker devices with better energy resolution than planar devices of the same thickness. We report on our recent progress in developing larger TlBr detectors. Over the past several months we have increased the electron mobility-lifetime product of our TlBr by more than one order of magnitude. Electron mobility-lifetime values as high as 3.0 times 10-3 cm2/V have been measured. Devices with small pixel design have been built with 3, 5, and 10 mm thickness and pixel pitch of 1 mm, 1.5, and 2.0 mm respectively. Pulse height spectra have been recorded over a range of energies from 60 keV to 662 keV. Energy resolution (FWHM) as high as approximately 5% at 122 keV and 1.7% at 662 keV has been obtained without any 3-D corrections. Such arrays are well suited for 3-D correction techniques similar to those applied to CZT devices, indicating that further improvement in energy resolution should be achievable. These latest results demonstrate promise for TlBr as a room temperature semiconductor gamma ray detector.
Thallium bromide radiation detectors
Crystals of highly purified thallium bromide were used to fabricate radiation detectors. These detectors were rested with isotopic photon sources and successfully detected gamma and X-rays in the 0.01- to 1 MeV energy range. The detectors were tested at and below room temperature, and their performance approaches that of other semiconductor detector materials which have been under development. The performance of TlBr detectors is due to the similarity in the transport characteristics of electrons and holes in TlBr and the relatively large number of charge carriers produced per unit of energy of detected particle. The performance of these detectors is currently limited by shot noise induced by the leakage current in the TlBr. >