Electrical properties of MIS structures with silicon nanoclusters
The theoretical and experimental investigations of electrical properties of the Al-SiO2- -SiO ( ncs Si − 2-Si structures grown using high temperature annealing SiOx, x < 2, have been carried out. It has been experimentally found that the Al-SiO2- ( ) ncs Si − -SiO2-Si structures with the tunnel dielectric layer revealed the effect of dynamic memory. Electric properties and parameters of the interface states located between and SiO ncs Si− 2 were studied in detail by measuring of current-voltage, capacitance-voltage, and thermally stimulated current characteristics.
Electron transport through nanocomposite SiO2(Si) films containing Si nanocrystals
The current transport through insulating SiO2 films with silicon nanocrystals in Si/SiO2(Si)/Al structures has been investigated in the wide range of temperatures (82-350 K). The nanocomposite SiO2(Si) films containing the silicon nanoclusters embedded into insulating SiO2 matrix have been obtained by ion-plasma sputtering of silicon target and subsequent high-temperature annealing. Based on the detailed analysis of current-voltage characteristics the calculation of some electrical parameters has been performed and the mechanism of electron conductivity of nanocomposite SiO2(Si) films has been determined. The electrical conductivity of the films is based on the mechanism of hopping conductivity with variable-range hopping through the traps near the Fermi level.
Characteristics of Surface-Emitting Cold Cathode Based on Porous Polysilicon
It is demonstrated that porous polysilicon (PPS) diode fabricated on the silicon substrate operates as efficient and stable surface-emitting cold cathode. A 1.5 pm of non-doped polysilicon layer is formed on n-type (100) silicon wafer and anodised in a solution of HF(50%): ethanol = 1:1 at a current density of 10 mA/cm 2 for 30 seconds under illumination by a 500W tungsten lamp from a distance of 20 cm. Subsequently, PPS layer is oxidized in a rapid thermal oxidation(RTO) furnace for one hour at a temperature of 700°C. A semi-transparent thin Au film (about 10 nm thick) is deposited onto the PPS layer as a positive electrode and an ohmic contact is formed at the back of the silicon wafer as a negative electrode. When a positive bias is applied to the Au electrode in vacuum, the diode uniformly emits electrons. No electron emission is observed in the negatively biased region. Emission current is about 10 −4 A/cm 2 at 20V bias, and no fluctuation of emission current is observed as a function of time. Emission current is not affected by a surrounding pressure up to around 10 Pa. It is envisaged that mechanism of this emission is attributed to hot electron tunnelling.