To develop porous Si as substrate for better quality GaN layer
In this work, we prepare porous Si substrates via anodic etching process. The etching parameters such as time and current would be optimized for the best porous substrate, which is defined by having high porous density. The estimated average of porous density of the substrate is determined through the observation via scanning electron microscopy (SEM). After that, a thin GaN film is deposited onto the best porous Si substrate, using RF-sputtering machine. The grown layer is then will be characterized by photoluminescence (PL), X-ray diffraction (XRD) and Hall-effect measurements. As a comparison, we also grow and characterize a thin GaN on non-porous Si substrate, with the adoption of AlN buffer layer.
Growth of crack-free hexagonal GaN films on Si(100)
Hexagonal GaN films have been grown on Si(100) substrates by employing a sputtered AlN buffer layer followed by another high-temperature metalorganic chemical vapor deposition (MOCVD) grown AlN buffer layer. The highly oriented structure of sputtered AlN provides a hexagonal template for subsequent AlN and GaN growth. The GaN films are evaluated by transmission electron microscopy, selected area electron diffraction, x-ray diffraction, and photoluminescence and exhibit a purely hexagonal columnar structure. The orientation of the GaN columns depends on the thickness of both the sputtered AlN buffer layer and the MOCVD grown AlN buffer layer. The surface of GaN films is shiny and crack free up to a thickness of 2 μm studied in this work.
Ignition and burning rates of segregated waste combustion in packed beds.
Recent developments in national recycling and re-use programmes for municipal waste have led to segregation of an increasing proportion of waste to enhance material recovery. Several of the segregated streams contain materials that can not viably be re-used or recycled but can be used for energy recovery. In this study, the combustion of cardboard and waste wood was investigated in a small-scale packed bed reactor in order to provide fundamental data for the design/operation of moving bed furnaces. Key parameters of combustion including the ignition and burning rates were evaluated for various air flowrates and compared to the modelling results. Two successive stages of combustion were identified for both samples: the propagation of ignition front into the bed and combustion of the fuel above the ignition front. The burning rate of cardboard reached a peak of about 300 kg/m(2)h at the air flowrate of 936 kg/m(2)h and decreased at higher air flowrates. For waste wood, both the ignition and burning rates increased in the tested range of the air flowrate up to 702 kg/m(2)h, of which the values were very close to those for the cardboard. The model prediction was in good agreement with the test results for waste wood. However, the burning rate for cardboard was under-predicted due to strongly irregular shapes of the fuel.