In situ scanning tunneling microscopy of InAs quantum dots on GaAs( 0 0 1 ) during molecular beam epitaxial growth
Abstract Arrays of InAs quantum dots (QDs) have been studied using in situ scanning tunneling microscopy (STM) during their growth by molecular beam epitaxy on GaAs(0 0 1). At a substrate temperature of 400 °C under As 4 flux, both the QDs and the underlying step-terrace structure of the wetting layer (WL) are found to be static, with neither step-flow nor QD ripening observed. Higher resolution images of the mature WL show slightly different [1 1 0] periodicities to those observed in quenched STM studies.
InAs quantum dot evolution observed by in-situ scanning tunneling microscopy during molecular beam epitaxy growth
We have successfully investigated the self-assembly mechanism for InAs quantum dots (QDs) formed on GaAs(001) by using a unique scanning tunnelling microscope (STM) placed within the molecular beam epitaxy (MBE) growth chamber. The images elucidate the mechanism of QD nucleation, demonstrating directly that not all deposited In is initially incorporated into the lattice, hence providing a large supply of material to rapidly form QDs via islands containing tens of atoms. kinetic Monte Carlo (kMC) simulations based on first-principles calculations show that tiny alloy fluctuations, like atomistic point defects, in the InGaAs wetting layer prior to are crucial in determining nucleation sites.
Mechanism of Action of Antibacterial Agents
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