High-breakdown-voltage Ga/sub 0.51/In/sub 0.49/P channel MESFET's grown by GSMBE
The first Ga/sub 0.51/In/sub 0.49/P channel MESFETs grown on a (100) GaAs substrate by GSMBE have been fabricated. A high gate-to-drain breakdown voltage of 42 V with a high maximum current density (320 mA/mm) was achieved. This result demonstrates that high-breakdown voltage could be attained by using Ga/sub 0.51/In/sub 0.49/P as the channel material. We also measured a high-maximum oscillation frequency (f/sub max/) of 30 GHz for a 1.5 /spl mu/m gate-length device. This value is quite high compared with other high-breakdown-voltage GaAs MESFET's or MISFET's with the same gate length.
High-Linearity High-Current-Drivability Gao.5 1 Ino.49P/GaAs MISFET Using Gao.5 1 Ino.49P Airbridge Gate Structure Grown by GSMBE
A novel structure Gao.51 Im.rsP/GaAs MISFET with an undoped Gao.slIno.*eP layer serving as the airbridge between active region and gate pad was first designed and fabricated. Wide and flat characteristics of gm and f max versus drain current or gate voltage were achieved. The device also showed a very high maximum current density (610 mA/mm) and a very high gate-to-drain breakdown voltage (25 V). Parasitic capacitances and leakage currents were minimized by the air- bridge gate structure and thus high f~ of 22 GHz and high f,,, of 40 GHz for 1 pm gate length devices were attained. To our knowledge, both were the best reported values for 1 pm gate GaAs channel FET's.
17 &mgr;m pixel 640 x 480 microbolometer FPA development at BAE Systems
BAE Systems has developed an advanced 640 x 480 focal plane array (FPA) with a 17 &mgr;m pixel pitch. Sensitivity of ≤ 50 mK was demonstrated and the FPAs were used in imaging demonstrations. Successful scaling of BAE Systems' patented single contact per pixel, single-level microbolometer process to 17 &mgr;m pitch provides a path toward next generation microbolometer imaging systems.