Future of GaN RF Technology in Europe
In the last years GaN has remained a key technology in Europe in particular, but not only, for RF Applications. After an intensive period of research and development the scope has shifted towards industrialization and product development. This is especially true for the applications up to around 20GHz where systems are now being built using European GaN-based components. At the same time, an increasing part of the research activity has moved toward higher frequencies beyond 20GHz.
Power Amplification and Integration Challenges of Reconfigurable Antennas for Space Applications
This paper reviews critical technologies for spaceborne active antennas. Focus is put on high-power amplification concepts, solutions for improved thermal management and other key areas that drive the performance of active antennas today. Preliminary results from associated ESA R&D activities are presented as well.
Thermal stability of Mo-based Schottky contact for AlGaN/GaN HEMT
The reliability of Mo-based Schottky contact for an AlGaN/GaN HEMT after a thermal storage test is reported. Electrical and chemical analyses demonstrate the stability of Mo/Au gate for a GaN HEMT after a 2000 h ageing test at temperatures up to 340°C.