Ether-like Si-Ge hydrides for applications in synthesis of nanostructured semiconductors and dielectrics.
Hydrolysis reactions of silyl-germyl triflates are used to produce ether-like Si-Ge hydride compounds including H(3)SiOSiH(3) and the previously unknown O(SiH(2)GeH(3))(2). The structural, energetic and vibrational properties of the latter were investigated by experimental and quantum chemical simulation methods. A combined Raman, infrared and theoretical analysis indicated that the compound consists of an equal mixture of linear and gauche isomers in analogy to the butane-like H(3)GeSiH(2)SiH(2)GeH(3) with an exceedingly small torsional barrier of approximately 0.2 kcal mol(-1). This is also corroborated by thermochemistry simulations which indicate that the energy difference between the isomers is less than 1 kcal mol(-1). Proof-of-principle depositions of O(SiH(2)GeH(3))(2) at 500 degrees C on Si(100) yielded nearly stoichiometric Si(2)Ge(2)O materials, closely reflecting the composition of the molecular core. A complete characterization of the film by RBS, XTEM, Raman and IR ellipsometry revealed the presence of Si(0.30)Ge(0.70) quantum dots embedded within an amorphous matrix of Si-Ge-O suboxide, as required for the fabrication of high performance nonvolatile memory devices. The use of readily available starting materials coupled with facile purification and high yields also makes the above molecular approach an attractive synthesis route to H(3)SiOSiH(3) with industrial applications in the formation of Si-O-N high-k gate materials in high-mobility SiGe based transistors.
A new photochemical method for the preparation of disiloxane and hexamethyldistannoxane
Abstract Various inorganic ethers, such as (SiH 3 ) 2 O and [(CH 3 ) 3 Sn] 2 O, can be prepared as a result of mercury photosensitized reactions of SiH 4 or (CH 3 ) 3 SnH or (CH 3 ) 3 Sn·Sn(CH 3 ) 3 with nitric oxide in the vapor phase.
Enhancement of surface properties on Low Density Polyethylene packaging films using various fluorination routes
Nowadays, packaging market deployment requires an important attention. Influence of treatment with molecular (F2) or atomic (Fradical dot) fluorine on properties of Low Density Polyethylene (LDPE) films was investigated. The films were treated using direct fluorination conditions with F2 or a specific reagent XeF2, which releases atomic fluorine Fradical dot. Changes of LDPE chemical composition were investigated by FTIR and solid state NMR. Surface morphology was studied by several microscopy techniques (SEM and AFM). Finally to further characterize film properties after treatments, surface energy measurements and electron paramagnetic resonance (EPR) analyses were also carried out. An upper fluorinated layer, which contains mainly high amount of single bondCF2single bond, was formed during the direct fluorination conditions (F2). For the process performed with XeF2, specific groups single bondCHFsingle bond were detected not only on the polymer surface but also in the bulk. The final CHF/CF2 ratio depended on the fluorination route. Treatment with Fradical dot (originated from XeF2 decomposition) resulted in single bondCHFsingle bond groups in bulk prevailing formation whereas F2 formed mainly single bondCF2single bond groups. Regardless to the reactive species, radicals (dangling bonds) appeared during the fluorination and reacted with oxygen during the exposition to air after the treatment. Such a process resulted in oxygenated polar groups formation and consequently in the surface energy increase.