Structual and Dielectric Properties of Pb(Zr0.53Ti0.47)O3 Thin Films Grown on LaNiO3 Buffered Si Substrates
Ferroelectric Pb(Zr0.53Ti0.47)O3 thin films with thickness of around 800 nm were prepared on LaNiO3 (LNO) buffered SiO2/Si substrates by sol-gel method. The LNO buffer layer serves as the bottom electrode and the template for growing PZT thin films with preferred orientation. The (110)-textured PZT thin films can be obtained on 250 nm-thick LNO buffered SiO2/Si substrates. Upon using the LNO buffer layer, the annealing temperature of the PZT films is lowered to 600degC. Our results indicate that PZT thin films prepared on LNO buffered Si substrates have good structural and dielectric properties for sensor and actuator applications.
Proceedings of IEEE Ultrasonics Symposium
The following topics were dealt with: SAW filters and oscillators; SAW systems and applications; SAW analysis, modelling and characterization; SAW materials and fabrication; sensors, motors and activators; physical acoustics and materials; acousto-optics; transducers, bulk waves and layers; NDE; industrial flow, ultrasonics and scattering; acoustic microscopy; tissue characterization and effects; medical imaging and arrays; flow measurement and transducers; signal processing; therapeutics
Grain boundary misorientations and percolative current paths in high‐Jc powder‐in‐tube (Bi,Pb)2Sr3Ca3Cu3Ox
Grain orientations and grain boundary misorientations in high‐Jc, powder‐in‐tube (PIT) (Bi,Pb)2Sr2Ca2Cu3Ox (Bi‐2223) were determined using electron backscatter Kikuchi diffraction and x‐ray microdiffraction. Data collected from over 113 spatially correlated grains, resulting in 227 grain boundaries, show that over 40% of the boundaries are Σ1 or small angle (less than 15°). In addition, 8% of the boundaries are within the Brandon criterion for CSLs (sigma larger than 1 and less than 50). Grain boundary ‘‘texture maps’’ derived from the electron microscope image and orientation data reveal the presence of percolative paths between low energy boundaries.