Piezoelectric changes of anisotropy and magnetization in ferrite-garnet film
The results of the effect of mechanical strain on magnetic anisotropy, the direction of magnetization vector and domain structure of ferrite-garnet film, rigidly connected with the zirconium-titanium lead (PZT) piezoceramic plate are presented. Since such a sandwich structure could be remagnetized both by magnetic field and electric voltage it could be used as the electro-magnetooptical modulator of light or spin switching cell in spintronics.
Ferrite-piezoelectric light modulator with electric and magnetic control of magnetization
The influence of mechanical stresses developed in a piezoelectric lead zirconate titanate (PZT) plate on the domain structure of mechanically coupled epitaxial yttrium iron garnet (YIG) film has been studied. The application of electric voltage to the piezoelectric plate leads to magnetoelastic variations in the anisotropy of the garnet film, which is manifested by reorientation of the magnetization vector from the direction perpendicular to the film plane to a direction parallel to this plane. Using this effect, it is possible to perform magneto-optical modulation of light transmitted through the film. Estimations of the influence of film parameters on the orientation of magnetization and characteristics of light beam allow the optimum parameters of the composite structure for various modulation regimes to be determined.
Magnetoelectric manipulation of domain wall configuration in thin film Ni/[Pb(Mn1/3Nb2/3)O3]0.68-[PbTiO3]0.32 (001) heterostructure
This paper reports experimental observations of partial and reversible out-of-plane magnetization change in a thin film Ni/[Pb(Mn1/3Nb2/3)O3]0.68-[PbTiO3]0.32 (001) heterostructure. Electric-field-induced isotropic in-plane compressive strain (∼1000 ppm) eliminates the stripe domain pattern in a 60-nm-thick Ni thin film. When the electric field is removed, the stripe domains are returned to their original configurations with some domain wall pinning perturbations due to ferroelectric domain texturing. The observed domain structure change is attributed to the transition from Bloch wall to Neel wall and the broadening of the Bloch wall. This out-of-plane magnetization change does not occur in thicker (100-nm-thick) Ni thin film.This paper reports experimental observations of partial and reversible out-of-plane magnetization change in a thin film Ni/[Pb(Mn1/3Nb2/3)O3]0.68-[PbTiO3]0.32 (001) heterostructure. Electric-field-induced isotropic in-plane compressive strain (∼1000 ppm) eliminates the stripe domain pattern in a 60-nm-thick Ni thin film. When the electric field is removed, the stripe domains are returned to their original configurations with some domain wall pinning perturbations due to ferroelectric domain texturing. The observed domain structure change is attributed to the transition from Bloch wall to Neel wall and the broadening of the Bloch wall. This out-of-plane magnetization change does not occur in thicker (100-nm-thick) Ni thin film.