The irradiation effect of DC-DC power converter under x-ray
The irradiation response of DC-DC power converter was studied using X-ray source with whole and local irradiation method. It was indicated that the irradiation response of the different part of circuit was represented different effect. The VDMOSFET of DC-DC power converter was tremendous irradiation affected, and PWM and Shottky diode was exiguous affected, and the trend of DC-DC power converter optical-coupler parameters affected by optical-coupler was reversely with other part of DC-DC circuits.
Total dose effects on power-MOSFET switching converters
Abstract Power MOSFETs have important applications in space systems, particularly in dc/dc power conversion. Transistors used in the space environment are subject to the effects of exposure to the natural radiation environment in space. Among the effects of ionizing radiation are shifts in threshold voltage and reduction of carrier mobility. In this work, the total-ionizing-dose-induced degradation of two switching power converters is examined. The MOSFETs for two switching converters were irradiated with a 60 Co source and their performance was evaluated in buck and boost converters. The experimental results agree well with values obtained from SPICE simulations.
The role of parasitic elements in the single-event transient response of linear circuits
Parasitic elements can play an important role in the single-event transient sensitivity of a circuit. This work describes how parasitics can affect the simulation response of linear circuits and shows how parasitics have been identified using a pulsed laser.