Electrical characteristics of Hg/sub 1-x/Cd/sub x/Te epilayers subjected to ultrasonic influence
The degradation of electrophysical characteristics of Hg1-xCdxTe thin films grown by LPE and MBE as a consequence of the high-frequency and high-intensity elastic deformation effect was investigated It was determined that parameters of Hg1-xCdxTe thin films grown by MBE are stable to ultrasonic influence whereas for Hg1-xCdxTe thin films grown by LPE the mobility decrease and the change of the conductivity type at low magnetic field wae observed The best agreement between experiment and calculation was obtained in the frame of assumption about forming of the thin layer with opposite conductivity. The possible mechanism of Ihe observing effects was analyzed.
Sonic-Stimulated Change of the Charge Carrier Concentration in n-CdxHg1-xTe Alloys with Different Initial State of the Defect Structure
Sonic-stimulated change of electron concentration in n-Cd x Hg 1-x Te alloys was investigated. The possible mechanism of the observed effects was analyzed. It was shown that the ultrasonic-induced increase of carrier concentration in n-Cd x Hg 1-x Te alloys could be connected with the activation of donor-like bound defects by acoustic wave. The value of such effect grows with increasing dislocation and low-angle boundary densities in the crystals. The resonance character of the ultrasonic influence was determined.
Photoreflectance characterization of vanadium-doped GaAs layers grown by metalorganic vapor phase epitaxy
Abstract We characterized the vanadium-doped (GaAs:V) layers grown on GaAs substrate by metalorganic vapor phase epitaxy. The conductivity of the samples is checked by the Hall effect measurements, and it is n type with electrons concentration ranging from 2×10 13 to 2×10 17  cm −3 . We used the photoreflectance technique (PR) to study the effect of vanadium doping on the optical properties of GaAs. Our experimental results show that the built-in electric field F and the broadening parameter Γ 0 increase with V-doping concentration. Furthermore, the temperature dependence of the built-in electric field and the broadening parameter of GaAs:V samples have been investigated by PR. It has been observed that these parameters increase with increasing temperature. The decrease of the built-in electric field with decreasing temperature is due to the photovoltage effect.We characterized the vanadium-doped GaAs (GaAs:V) layers grown on GaAs substrate by metalorganic vapor phase epitaxy.