Raman-scattering elucidation of the giant isotope effect in hydrogen-ion blistering of silicon.
In this work, we investigate the origin of a giant isotope effect discovered in the blistering of hydrogen-ion-implanted and annealed silicon. Si(001) samples were implanted or co-implanted with 5 keV of H and/or D ions to total fluences of 2 x 10(16) and 6 x 10(16) ion/cm(2). The lower fluence is sufficient for blistering by pure H, but the higher one is required for the maximum blister coverage whenever D is involved. On these samples, we carried out Raman-scattering investigations of the evolution of Si-H/D complexes upon a stepwise thermal annealing from 200 to 550 degrees C. We have identified the critical chemical transformations characterizing the hydrogen-deuterium-induced blistering of silicon. The puzzling dependence on ion mass appears to be mainly connected with the nature of the radiation damage. We have found that H is more efficient in "preparing the ground" for blistering by nucleating platelets parallel to the surface, essentially due to its ability to agglomerate in the multihydride monovacancy complexes that evolve into hydrogenated extended internal surfaces. By contrast, D is preferentially trapped in the surprisingly stable monodeuteride multivacancies.
Creating nanostructures on silicon using ion blistering and electron beam lithography
We have investigated the patterning of silicon surfaces using ion blistering in conjunction with e-beam lithography. Variable width (150–5000 nm) trenches were first written in 500 nm thick PMMA resist spin coated on silicon, using an electron beam. Next, 10 keV H2+ ions were implanted to various fluences through the masks. The resist was then removed and the samples were rapidly thermally annealed at 900 °C. The resulting surface morphologies were investigated by atomic force microscopy. In the wider trenches, round blisters with 600–900 nm diameter are observed, which are similar to those observed on unmasked surfaces. In submicron trenches, there is a transition in morphology, caused by the proximity to the border. The blisters are smaller and they are densely aligned along the trench direction (‘string of pearls’ pattern). Unusual blister geometries are observed in the narrowest trenches (150 nm) at higher H doses (≥1 × 1017 H cm−2)—such as tubular blisters aligned along the trench. It was also found that for H doses of ≥6 × 1016 H cm−2 the surface swells uniformly, which has implications for the blistering mechanism. The prospects for accomplishing ion cutting, layer transfer and bonding of finely delineated patterns of silicon onto another material are discussed in the light of the above results.
Highly enantio- and diastereoselective synthesis of β-methyl-γ-monofluoromethyl-substituted alcohols.
Enanatiopure β-methyl-γ-monofluoromethyl alcohols were prepared from the allylic alkylation between fluorobis(phenylsulfonyl)methane with Morita-Baylis-Hillman carbonates. The reaction was catalyzed by using the Cinchona alkaloid derivative, (DHQD)(2)AQN. The origin of the stereoselectivity was verified by DFT methods. Calculated geometries and relative energies of various transition states strongly support the observed stereoselectivity.