Investigation of tribological and read-write performance of textured sliders
Slider surface texturing is a promising new way to improve the tribological performance of future hard disk drives with very low flying heights. In this study, proximity recording sliders with a design flying height of 6 nm at 20 m/s were textured using oxygenated plasma etching. In order to protect the read-write element, texturing of sliders was performed after positioning a mica mask over the read-write element. The tribological and read-write performance of the slider before texturing was compared with the tribological and magnetic performance of the same slider after texturing. It was found that no degradation of the read-write performance occurred and that the tribological performance of the slider was improved after texturing.
The Effect of Slider Surface Texture on Flyability and Lubricant Migration under Near Contact Conditions
Abstract Magnetron sputtering and ion beam sputtering were used to texture the air-bearing surface of magnetic recording sliders. Flying height measurements and Laser-Doppler interferometry were used to compare the ‘flyability’ of textured and untextured sliders. Lubricant redistribution on the disk surface caused by slider/disk interactions was investigated using scanning ellipsometry (Surface Reflectance Analyzer (SRA)). The results show that slider surface texture causes only small changes in the flying height of sliders but reduces slider in-plane and out-of-plane vibrations. Textured sliders were found to cause less lubricant depletion on the disk surface than untextured sliders under ‘near contact’ conditions.
Anomalous Annealing Behavior of Arsenic Implanted Silicon as a Function of Dose and Energy
Anomalous annealing behavior of damage in As implanted Si has been investigated by channeling effect measurements. Room temperature As implants with doses from 1014 to 2 × 1016cm-2 at energies ranging from 50 to 250 keV into Si were annealed over the range of 600°C to 1100°C. Anneal temperatures ≥ 950°C reduce the disorder for ion doses of 0.5 to 1 × 1016 cm-2 at energies between 50 and 250 keV. Anomalously high residual disorder was found for the intermediate doses of 2 × 1014 to 2 × 10/cm2 implanted above 100 keV. For this intermediate dose, annealing of implants performed at liquid nitrogen temperatures did not show significant reduction in this damage. However implants at 200° to 300°C indicate a lower amount of damage compared to the room temperature implants.