A novel method for the measurement of diffusion lengths in solar cells
The minority carrier diffusion length in the base region of a solar cell is an important factor affecting the conversion efficiency and spectral response of the cell. Conventional methods for the measurement of minority carrier diffusion lengths in semiconductor materials are generally unsuitable for measurements on completed solar cells. This paper describes a simple and direct technique for the measurement of minority carrier diffusion length in solar cells, It has been applied to both single crystalline and polycrystalline silicon solar cells, and the results compared to standard surface photovoltage measurements.
XIII. Photovoltaic and Photoconductive Theory Applied to InSb
Equations are formulated for the distribution of photo-electrons and photo-holes in an intrinsic material. From the results for the photovoltaic effect it is shown that a value for the ambipolar di...
SR topography of plastically deformed Fe-Si bicrystals - observation in situ and post mortem
SR reflection topography was applied to study the interaction of slip dislocations with the grain boundaries in Fe-4at%Si bicrystals deformed by compression. Three experimental settings with either a white or monochromatic beam were used and the corresponding orientation contrast analysed. Dislocation transmission through the grain boundary was observed in bicrystals with favourable geometry of the slip systems.