III-V Photonic Integration Outside Telecommunications - Does InP Have A Role?
Photonic products are now appearing that make extensive use of monolithic 
integration in III-V semiconductors. Many products use GaAs-based alloys 
either because the operation wavelength is important or because the physical 
properties of such alloys result in improved performance. Integration activity 
will be reviewed and the role for InP analysed.
A universal damage induced technique for quantum well intermixing
We report a novel technique for quantum well intermixing which is simple, reliable and low cost, and appears universally applicable to a wide range of material systems. The technique involves the deposition of a thin layer of sputtered SiO2 and a subsequent high temperature anneal. The deposition process appears to generate point defects at the sample surface, leading to an enhanced intermixing rate and a commensurate reduction in the required anneal temperature. Using appropriate masking it is possible to completely suppress the intermixing process, enabling large differential band gap shifts (over 100 meV) to be obtained across a single wafer.
Very low loss extended cavity GaAs/AlGaAs lasers made by impurity-free vacancy diffusion
Very low loss extended cavity lasers have been fabricated using the impurity-free vacancy diffusion technique. The average loss, obtained from the slope of measured loss as a function of the extended cavity length, was 10 dB/cn for extended cavities annealed at 900 degrees C for 30 s. The lowest loss of 3.6 dB/cm was obtained from a device annealed at 950 degrees C for 30 s.