Dyeing behavior of atmospheric dielectric barrier discharge AR-O 2 plasma treated poly (ethylene terephthalate) fabric
Low-pressure glow discharges are efficient in generating uniform plasmas. They have been applied in surface modification of varieties of materials. But most of these applications are limited to small-scales because of their reliance on vacuum equipments needed to sustain processes at low pressure. This work aims at commending a continuous surface treatment device, which meets the requirement of textile material surface modification by dielectric barrier discharge (DBD) at atmospheric pressure for industry production. In the experiment, quasi-glow-discharge, a glow-discharge like plasma, is produced under atmospheric pressure with the continuous simple device. Through the discharge of mixture of argon and oxygen, Ar-O2 (10:1), polyester fabric is continuously modified. The results reveal that the dyeability of the polyester fabric is dramatically improved. The spectral value (K/S) of the dyed polyester fabric is increased by about 50 %, and the relative dye up-take is also increased by about 18% after the treatment. The dyeing fastness of the modified material remains the highest degree. That is to say, the improvement of the dyeability does not degrade the dyeing fastness of the material at all. The study of scanning electron microscope (SEM) shows that the smooth and glossy surface of polyester fiber becomes rough after the treatment. The X-ray photoelectron spectroscopy (XPS) illustrates that Ar-O2 (10:1) discharge can help generate a few carboxyl groups in the polyester fiber surface. The improvement of dyeability is attributed to the reaction of coarsenization and the introduction of functional groups in the surface during the treatment. Producing approximately uniform plasma in simple operation and achieving satisfying surface modification of textile material, this kind of device would play an active role in the future technological textile industry.
From ozone generators to flat television screens: history and future potential of dielectric-barrier discharges
Abstract
The direct photochemical vapour deposition of SiO2 from Si2H6 and N2O3 mixtures
Abstract The direct photo chemical vapour deposition of silicon dioxide has been achieved from a mixture of Si2H6 and N2O3 using an external deuterium lamp with a magnesium fluoride window as the vacuum UV source. The oxide has been deposited on n-type 〈100〉, 1–5 Ω cm, crystalline silicon substrates and it is shown that the deposition is photon limited to a maximum deposition rate of about 1 A s-1. The variation in the deposition rate and the refractive index with process parameters is reported. IR absorption studies show that the oxide is very nearly stoichiometric with no detectable Si-N bonds and only trace amounts of Si-H bonds. This is confirmed by laser-induced ion mass spectroscopy studies. The Si-O-Si stretching mode peak height and half-width show a thickness dependence in both the as-deposited and the annealed states. Etch rates of these films are about 12 A s-1. The oxides show a breakdown strength of about 7 MV cm-1 and C-V measurements show an oxide fixed charge of about 1011 cm-2 and an interface trap density of the order of 1011 cm-2 eV-1.