Design, simulation and measurement techniques for embedded decoupling capacitors in multi-GHz packages/PCBs
Embedded capacitor is a better solution than surface mount capacitors for decoupling in a high speed, high performance packages/PCBs. Our study has showed that with conventional approaches, the embedded capacitor for decoupling in power delivering network can work from 100 MHz to 1 GHz systems. Pushing the operating frequency over 1 GHz is a challenge for system designers. This paper discusses the embedded decoupling capacitor design for multi-GHz systems through principles, simulation, measurement error, and error elimination.
High capacitance density thin film integrated tantalum pentoxide decoupling capacitors
The process development and analysis of a multilayered thin film integrated capacitor is presented. Thin film integrated capacitors show great promise as IC power supply decoupling capacitors. Their low intrinsic inductance allows them to deliver fast switching high currents to the IC. However, current thin film capacitors are limited in capacitance due to the limitation of substrate area in boards or packages. Generally, there is not enough area available to produce the capacitance needed so that integrated capacitors can completely replace discretes. In this paper a multilayer thin film integrated capacitor design was discussed. The details of the multilayer process was described, as well as process challenges and preliminary results of the research. Currently capacitance densities in the range of 0.4 /spl mu/P/cm/sup 2/ have been obtained with a two layer process.
Low-temperature fabrication of amorphous BaTiO/sub 3/ thin-film bypass capacitors
Amorphous BaTiO/sub 3/ thin-film capacitors suitable for integration into a multichip module packaging process were fabricated. The multilayer capacitor structure consisted of an adhesion layer (TiO/sub x/N/sub y/ or Ti), a bottom electrode (Cu), a dielectric (amorphous BaTiO/sub 3/), and a top electrode (Cu). A 3000-AA amorphous BaTiO/sub 3/ film was deposited onto the electrode by the reactive partially ionized beam (RPIB) technique at near room temperature. After a 300 degrees C postdeposition anneal, the capacitors had the following properties: epsilon /sub r/=17-18 and tan delta <0.01 up to 600 MHz, J/sub leak/=0.06-0.5 mu A/cm/sup 2/ at 0.5 MV/cm, and breakdown field E/sub max/=3.3 MV/cm.<<ETX>>