INFLUENCE OF LONG-TERM ANNEALING ON RESIDUAL STRESS DISTRIBUTION AND QUASI-BRITTLE FAILURE PROPERTIES OF TALCUM REINFORCED PIPE GRADE POLYPROYPLENE
In this study a polypropylene material with talcum reinforcement used for sewer pipes has been subjected to an annealing procedure at 80°C, roughly 60°C above the actual application temperature, in air for a time period of 18 months. As expected, examination of the material showed no significant decrease in mechanical or fracture mechanical properties due to the temperature exposure. However, samples stored at higher temperature showed better resistance against quasi-brittle failure in fatigue tests compared to unconditioned samples. This could mainly be attributed to the decrease of residual stress in the pipe wall. Even though pipes have been annealed for very long times above Tg, residual stress could not be totally relaxed within 18 months.
The determination of residual stresses in plastic pipe and their role in fracture
A method for the determination of residual stresses in plastic pipe by layer removal and subsequent slitting is described. Results are analyzed from deflections measured on a high density polyethylene pipe. The use of these data in the calculation of KI around a semi-elliptical flaw at the pipe wall is then discussed.
Photoreflectance characterization of vanadium-doped GaAs layers grown by metalorganic vapor phase epitaxy
Abstract We characterized the vanadium-doped (GaAs:V) layers grown on GaAs substrate by metalorganic vapor phase epitaxy. The conductivity of the samples is checked by the Hall effect measurements, and it is n type with electrons concentration ranging from 2×10 13 to 2×10 17  cm −3 . We used the photoreflectance technique (PR) to study the effect of vanadium doping on the optical properties of GaAs. Our experimental results show that the built-in electric field F and the broadening parameter Γ 0 increase with V-doping concentration. Furthermore, the temperature dependence of the built-in electric field and the broadening parameter of GaAs:V samples have been investigated by PR. It has been observed that these parameters increase with increasing temperature. The decrease of the built-in electric field with decreasing temperature is due to the photovoltage effect.We characterized the vanadium-doped GaAs (GaAs:V) layers grown on GaAs substrate by metalorganic vapor phase epitaxy.