Temporal resistance variation of the second generation HTS tape during superconducting-to-normal state transition
BackgroundThe quench process in high-temperature superconducting (HTS) wires plays an important role in superconducting power devices, such as fault current limiters, magnets, cables, etc. The superconducting device should survive after the overheating due to quench.MethodsWe studied the evolution of the resistance of the YBCO tape wire during the quench process with 1 ms time resolution for various excitation voltages.FindingsThe resistive normal zone was found to be located in a domain of about 1-4 cm long. The normal state nucleation begins in 40-60 ms after voltage is applied across the HTS tape. In subsequent 200-300 ms other normal state regions appear. The normal domain heating continues in the following 5-10s that results in a factor of 2–3 increase of its resistance.ConclusionsFormation of the normal domain during the quench process follows the same stages for different excitation voltages. Characteristic domain sizes, lifetimes and temperatures are determined for all stages.
Effect of the seed layer on the Y0.5Gd0.5Ba2Cu3O7-σ film fabricated by PLD
Abstract The surface morphology and internal residual stress have influence on the critical current density (Jc) of REBa2Cu3O7-σ (REBCO) coated conductor. In order to modulate them, a series of Y0.5Gd0.5Ba2Cu3O7-σ (YGBCO) films were prepared by pulsed laser deposition (PLD) through introducing a seed layer in this paper. The thicknesses of seed layer changes from about 2 nm to 30 nm. For comparison, a standard sample without seed layer was fabricated at the same deposition condition. The surface morphology was illustrated by Scanning electron microscopy (SEM). The surface roughness was scanned by Atomic force microscopy (AFM). The microstructure and internal strain were measured by X-ray Diffraction (XRD). DC four-probe method was used to measure the critical current of the samples at 77 K and self-field. As a result, all samples have high Jc of about 4 MA/cm2, while the self-field Jc of the YGBCO films can be promoted by the seed layer. The results of our research work are as follows. First of all, seed layer makes the deposition of the YGBCO layer much easier to control. By this way, we can decrease the surface roughness of the samples. Furthermore, the internal residual stress of the YGBCO films with seed layer decrease. Finally, the best thickness of the seed layer was found by summarizing and analyzing the conditions of seed layer.
Simulation study of high power microwave generation by virtual cathode oscillation in coaxial vircator
Summary form only given, as follows. We have numerically simulated the high power microwave generation by virtual cathode oscillation in a coaxial vircator with 3 dimensional PIC code Magic. It is noted that the coaxial vircator has the advantage of an enhancement of power efficiency and gaining of narrow bandwidth frequency. The study is focused on the design of a diode structure for a coaxial vircator suitable for Chundoong IREB pulser (Max. 600 kV, 85 kA, 60 ns). It consists of a center annular cathode, a cylindrical meshed-anode and a reflector. The simulation results showed that the coaxial vircator can indeed be operated at the selected frequency with the narrow bandwidth and the microwave output power strongly depends on the position and geometry of the reflector. From this simulation results we expect that the maximum microwave output power will be obtained by the reflector of 4 cm in width and also 4 cm in distance away from the IREB, where the resonant frequency of microwave from coaxial vircator is simulated to be 6.577 GHz.