25.8Gbps Direct Modulation AlGaInAs DFB lasers with Ru-doped InP Buried Heterostructure for 70°C operation
25.8Gbps Direct Modulation AlGaInAs DFB lasers with Ru-doped InP Buried Heterostructure were fabricated for the first time. The lasers achieved high output power and clear eye opening at 70°C and are promising for uncooled operation.
Recent progress in 1.3-µm uncooled InGaAlAs directly modulated lasers
Recent progress in developing 1.3-um InGaAlAs-MQW directly modulated lasers is reported. Uncooled 25-Gbps operations over a wide temperature range were demonstrated. Clear eye opening up to 100 °C % was successfully obtained.
Operation of a 25-Gb/s Direct Modulation Ridge Waveguide MQW-DFB Laser up to 85 $^{\circ}$ C
We demonstrated a 25-Gb/s direct modulation up to 85degC with a 1.3- mum InGaAlAs ridge-waveguide multiple-quantum-well distributed-feedback laser. The dependence of the relaxation oscillation frequency on current was 3.3 GHz/mA1/2, and this is the highest value ever reported for 200-mum-long lasers in the 1.3-mum wavelength region. The alpha parameter was around 2.7 at 25degC, and an error-free operation after a 10-km single-mode fiber transmission was obtained up to 85degC.