Research on precise assembly of large optical components technology
With the rapid development of high-energy solid-state lasers, the demand for efficient and precise assembly of large optical components is growing. Currently the assembly of large optical components is low level of automation and labor-intensive. To achieve high level of automation is a very difficult task. The large optical components are very fragile, heavy and expensive. The high-energy solid-state lasers require the large optical components in high level of cleanness. In this paper, we designed a grasping device and an operating device which are used to complete the precision assembly of large optical components efficiently. The kinematic equations of the operating device are built. Workspace analysis and trajectory planning are completed. Based on the actual assembly process of large optical components, the control system of grasping device and operating device was designed.
Near field intensity trends of main laser alignment images in the National Ignition Facility (NIF)
The National Ignition Facility (NIF) utilizes 192 high-energy laser beams focused with enough power and precision on a hydrogen-filled spherical, cryogenic target to potentially initiate a fusion reaction. NIF has been operational for six years and during that time, thousands of successful laser firings or shots have been executed. Critical instrument measurements and camera images are carefully recorded for each shot. The result is a massive and complex database or ‘big data’ archive that can be used to investigate the state of the laser system at any point in its history or to locate and track trends in the laser operation over time. In this study, the optical light throughput for more than 1600 NIF shots for each of the 192 main laser beams and 48 quads was measured over a three year period from January 2009 to October 2012. The purpose was to verify that the variation in the transmission of light through the optics performed within design expectations during this time period. Differences between average or integrated intensity from images recorded by the input sensor package (ISP) and by the output sensor package (OSP) in the NIF beam-line were examined. A metric is described for quantifying changes in the integrated intensity measurements. Changes in light transmission from the NIF main laser over the three year time-frame are presented.
Photoreflectance characterization of vanadium-doped GaAs layers grown by metalorganic vapor phase epitaxy
Abstract We characterized the vanadium-doped (GaAs:V) layers grown on GaAs substrate by metalorganic vapor phase epitaxy. The conductivity of the samples is checked by the Hall effect measurements, and it is n type with electrons concentration ranging from 2×10 13 to 2×10 17  cm −3 . We used the photoreflectance technique (PR) to study the effect of vanadium doping on the optical properties of GaAs. Our experimental results show that the built-in electric field F and the broadening parameter Γ 0 increase with V-doping concentration. Furthermore, the temperature dependence of the built-in electric field and the broadening parameter of GaAs:V samples have been investigated by PR. It has been observed that these parameters increase with increasing temperature. The decrease of the built-in electric field with decreasing temperature is due to the photovoltage effect.We characterized the vanadium-doped GaAs (GaAs:V) layers grown on GaAs substrate by metalorganic vapor phase epitaxy.