25.8Gbps Direct Modulation AlGaInAs DFB lasers with Ru-doped InP Buried Heterostructure for 70°C operation
25.8Gbps Direct Modulation AlGaInAs DFB lasers with Ru-doped InP Buried Heterostructure were fabricated for the first time. The lasers achieved high output power and clear eye opening at 70°C and are promising for uncooled operation.
Uncooled 25.78 Gb/s transmission over 10 km using a 1.3 µm directly modulated DFB laser in a TO-CAN package
We developed an uncooled TO-CAN packaged 1.3 µm directly modulated DFB laser for 25.78 Gb/s applications. Clear eye diagrams were obtained complying with the 100GBASE-LR4 mask from −5°C to 85°C over 10 km of SMF.
Uncooled 40-Gbps direct modulation of 1.3-µm-wavelength AlGaInAs distributed reflector lasers with semi-insulating buried-heterostructure
1.3-µm-wavelength AlGaInAs distributed reflector lasers were investigated for uncooled high-speed direct modulation. 40-Gbps modulation under low driving current of 50 mA up to 50°C and 40-Gbps eye opening at 85°C are demonstrated.