The Rationale for Generic Social Work in an Undergraduate Course in a Developing Country: the Zambian Case
or specific social work was first raised. Admittedly this was primarily related to social casework but it was here that the idea arose that while thcre might be a generic base which all social workers would be ’expected to know there were also specific aspects, in this case specific to the field of operation, that each worker would learn according to his area of intended work, (e.g., mental health, corrections, child welfare) . However, 1929 did not settle the issue. There is still a question today as to whether generic social work is a viable, professional and operable possibility. It is. my contention that it is, particularly in the context suggested for undergraduate level workers in a developing country.
Social Work's Relation to National Development in Developing Nations
■ The requirements of national development programs often conflict with basic assumptions of the Ameritan model of professional social work. Questions have been raised in developing nations about the relevance for national development programs of either social work technical assistance or social work education based on this model. In this paper, the author discusses the nature of national development, the role of the social work—social welfare and community development models in a development program, the options and constraints for social work in developing nations, and the implications for training personnel In such nations. ■
Selective etching of InP in NaF solution
Abstract The crossing porous structure of InP has been obtained by electrochemical etching in NaF solutions. The behavior of the periodic oscillation occurs at different potential ranges for the different concentrations of solutions, and it will disappear with the concentration of the solution decreased. The scanning electron microscope (SEM) image shows that the pores have two directions on the surface and are perpendicular to each other. The two directions are assigned to [0 1 1] and [ 0 1 ¯ 1 ], respectively. The SEM image of the cross-section also shows that the two directions are assigned to [1 1 1]B and [ 1 1 ¯ 1 ¯ ]B. Both are due to the selective etching of F− ions. The crossing porous structure of InP is a very promising feature for the three-dimensional structure of III–V compound semiconductors for photonic band gap materials.