Growth and structure analysis of tungsten oxide nanorods using environmental transmission electron microscopy
The WO3 nanorods were fabricated in environmental transmission electron microscopy (ETEM) by simply heating it in oxygen atmosphere. Altough, WO3 nanorod showed high crystalline, but the stacking fault existed in nanorod. Furthermore, the nanorod was grown on tungsten wire through slit of oxide layer on it.
Adsorption and desorption of oxygen on stepped tungsten surfaces
The adsorption and desorption of oxygen on stepped tungsten surfaces with orientations close to the (110) orientation and steps parallel to the most densely packed crystal direction ([111]) is studied with low energy electron diffraction, Auger electron spectroscopy, work function measurements and thermal desorption spectroscopy. With increasing deviation from the (110) orientation, an increasing preference for the formation of the p(2 × 1) domain with the densely packed direction parallel to the steps is noted. The adsorption kinetics does not differ markedly from that on the flat (110) surface, however the desorption behaviour at low coverages (θ < 0.3) is quite different. The results are interpreted in terms of the dissociation of a mobile precursor at terrace and step sites, the competition between the two domains during their growth and a step-induced premature transition to the complex structure observed on flat (110) surfaces at θ ⋍ 8. The steps are believed to play also a significant role in desorption.
Photoreflectance characterization of vanadium-doped GaAs layers grown by metalorganic vapor phase epitaxy
Abstract We characterized the vanadium-doped (GaAs:V) layers grown on GaAs substrate by metalorganic vapor phase epitaxy. The conductivity of the samples is checked by the Hall effect measurements, and it is n type with electrons concentration ranging from 2×10 13 to 2×10 17  cm −3 . We used the photoreflectance technique (PR) to study the effect of vanadium doping on the optical properties of GaAs. Our experimental results show that the built-in electric field F and the broadening parameter Γ 0 increase with V-doping concentration. Furthermore, the temperature dependence of the built-in electric field and the broadening parameter of GaAs:V samples have been investigated by PR. It has been observed that these parameters increase with increasing temperature. The decrease of the built-in electric field with decreasing temperature is due to the photovoltage effect.We characterized the vanadium-doped GaAs (GaAs:V) layers grown on GaAs substrate by metalorganic vapor phase epitaxy.