Photoconductive decay lifetime and Suns-Voc diagnostics of efficient heterojunction solar cells
Minority carrier lifetime and Suns-Voc measurements are well-accepted methods for characterization of solar cell devices. We use these methods, with an instrument from Sinton Consulting, as we fabricate and optimize state-of-the-art all hot-wire chemical vapor deposition (HWCVD) silicon heterojunction (SHJ) devices. For double-sided SHJ devices, lifetime measurements were performed immediately after hydrogenated amorphous silicon (a-Si:H) deposition of the front emitter and back base contacts on a Silicon wafer, and also after indium tin oxide (ITO) deposition of transparent conducting oxide contacts. We report results of minority carrier lifetime measurements for double-sided p-type Si heterojunction devices and compare Suns-Voc results to Light I–V measurements on 1-cm2 solar cell devices measured on an AM1.5 calibrated XT-10 solar simulator.
Well Passivated a-Si:H Back Contacts for Double-Heterojunction Silicon Solar Cells
We have developed hydrogenated amorphous silicon (a-Si:H) back contacts to both p-and n-type silicon wafers, and employed them in double-heterojunction solar cells. These contacts are deposited entirely at low temperature (<250degC) and replace the standard diffused or alloyed back-surface-field contacts used in single-heterojunction (front-emitter only) cells. High-quality back contacts require excellent surface passivation, indicated by a low surface recombination velocity of minority-carriers (S) or a high open-circuit voltage (Voc). The back contact must also provide good conduction for majority carriers to the external circuit, as indicated by a high light I-V fill factor. We use hot-wire chemical vapor deposition (HWCVD) to grow a-Si:H layers for both the front emitters and back contacts. Our improved a-Si:H back contacts contribute to our recent achievement of a confirmed 18.2% efficiency in double-heterojunction silicon solar cells on p-type textured silicon wafers [1]
Parameters for low energy operation of CESR
We present a detailed design for operation of the Cornell Electron Storage Ring, CESR, in the energy range covering the /spl psi/ resonances and the Charm and Tau thresholds, as well as reaching to the upper Y resonances near 11 GeV. The addition of 18 m of super-ferric wiggler magnets will partially restore low energy beam emittance and damping times. Installation of superconducting quadrupoles in the interaction region and the addition of high performance superconducting RF cavities will enhance performance at all energies. Studies of optics, beam dynamics, wiggler and vacuum system performance, beam stability, and beam-beam effects confirm operation with a luminosity of 3/spl times/ 10/sup 32/ CM/sup -2/ sec/sup -1/ at 1.88 GeV.