Suppression of cobalt silicide agglomeration using nitrogen (N/sub 2//sup +/) implantation
In this paper, the effects of nitrogen coimplantation with boron into p/sup +/-poly gate in PMOSFETs on the agglomeration effects of CoSi/sub 2/ are studied. The thermal stability of CoSi/sub 2//poly-Si stacked layers can be significantly improved by using nitrogen implantation. Samples with 40-nm cobalt silicide (CoSi/sub 2/) on 210-nm poly-Si implanted by 2/spl times/10/sup 15//cm/sup 2/ N/sub 2//sup +/ are thermally stable above 950/spl deg/C for 30 s in N/sub 2/ ambient. If the dose of nitrogen is increased up to 6/spl times/10/sup 15//cm/sup 2/, the sheet resistance of CoSi/sub 2/ film is not increased at all, and TEM photographs show that the agglomeration of CoSi/sub 2/ film is completely suppressed.
Recrystallization and grain growth phenomena in polycrystalline Si/CoSi2 thin‐film couples
This paper presents high‐temperature effects on CoSi2/polycrystalline silicon (poly‐Si) bilayers, intended for metal‐oxide‐semiconductor gate applications. Both rapid thermal annealing and conventional furnace annealing were utilized for the investigation. At temperatures above 700 °C the structure breaks down due to silicon recrystallization within the silicide and simultaneous silicide growth into the polycrystalline silicon film. Recrystallized silicon adopts the silicide texture and this process terminates when the entire polysilicon layer is consumed. After completion the layer configuration is inverted, i.e., the silicide is adjacent to the gate oxide and covered with elemental silicon at the surface. This surface layer consists of large grains with few crystal defects, very different from the columnar structure of the as‐deposited silicon. With further annealing, grain growth in both phases continues, and each grain will ultimately extend from the oxide interface to the free surface. Lateral grain ...
Strategies for glass based photonic system integration
There is a clear tendency to integrate more and more opto-electronic and micro-optical components like optical fibers, laser diodes, modulators, isolators, beam-splitting components and micro lenses in also increasingly dense and complex assemblies. The paper will discuss thin glass as a very promising base material for that kind of photonic packaging on interposer and board level including optical interconnection using fibers.