Simple expression of laser diode multimode rate equations including band filling effects
By introducing semiconductor gain into common laser diode multimode rate equations, we have found that the differential gain coefficient and the carrier density at transparency have a linear dependence with wavelength. Based on this fact, we have derived a simple expression for the laser diode gain including band filling effects.
Comparison of the bifurcation scenarios predicted by the single-mode and multimode semiconductor laser rate equations
We present a detailed comparison of the bifurcation scenarios predicted by single-mode and multimode semiconductor laser rate equation models under large amplitude injection current modulation. The influence of the gain model on the predicted dynamics is investigated. Calculations of the dependence of the time averaged longitudinal mode intensities on modulation frequency are compared with experiments performed on an Al(x)Ga(1-x)As Fabry-Perot semiconductor laser.
5.63 and 5.80 MeV levels of Ne20; de-excitation branching
Abstract The ratio Г γ /Г for the 5.63 and 5.80 MeV levels of Ne 20 has been determined to be 0.077 (±0.008) and −4 , respectively, by using the C 12 (C 12 , α)Ne 20 reaction and determining the fraction of the events in which the alpha-particle and the Ne 20 recoil are present in coincidence at the kinematically correct angles. In both cases these results in themselves are shown to imply radiative E1 transition (5.63→1.63 and 5.80→0, respectively) probabilities ⪡5 × 10 −5 Weisskopf units. When taken together with the life-time for the 5.63 MeV level measured by Evans et al . values of Г( E1 ) ≲ 5 × 10 −6 and Г α ≈ 6% of the particle estimate are obtained for this state.