Pseudo-potential calculations of the electronic and optical properties of GaxAlyIn1–x–yAs
A method for calculating the electronic structure of the quaternary alloy GaAlInAs is presented with zinc blende structure. We have used the empirical pseudo-potential method coupled with the virtual crystal approximation (VCA). The electronic structures are studied for GaAlInAs (x = 0.24, y = 0.24) and GaAlInAs lattice matched to InP as well GaAs. In addition a method for calculating the refractive index is presented, which we used the Sellmeir model. The composition dependence of the refractive index is discussed, the results indicate that refractive index decrease with alloying composition of the quaternary alloy GaAlInAs lattice matched to InP and GaAs.
Band Structure and Transport Properties of Some 3–5 Compounds
The experimental information relevant to the band structure of the compounds InSb, InAs, GaSb, GaAs, GaP, AlSb and some of their alloys is synthesized and interpreted in terms of a consistent theoretical picture which exploits the close relationship linking the band structures of the group 4 and 3–5 semiconductors. It is shown that the momentum matrix element determining the conduction band masses in those compounds whose edge is of symmetry type Γ1, is nearly constant. Simple theoretical expressions, agreeing well with experiment, are derived for the corresponding effective masses and valence band spin‐orbit splittings, following Kane's theory for InSb. The dominant scattering mechanisms determining the transport properties are reviewed briefly. Arguments are presented which show deformation potential scattering to be unimportant relative to polar optical mode scattering. A heuristic treatment indicates that the relaxation time approximation can be applied reasonably to polar scattering for temperatures ...
Reliability of InAlGaAs strained-quantum-well lasers operating at 0.81 mu m
Preliminary reliability studies of strained In/sub 0.15/Al/sub 0.13/Ga/sub 0.72/As quantum-well lasers operating at 0.81 mu m are reported. InAlGaAs lasers, a possible replacement for AlGaAs lasers, have been studied with respect to three failure mechanisms. Uncoated In/sub 0.15/Al/sub 0.13/Ga/sub 0.72/As quantum-well lasers have exhibited catastrophic optical damage limits of 1.87 MW/cm/sup 2/, which is equal to that of similar AlGaAs lasers. Further, the lasers are both free of <100> DLD-induced sudden failures and exhibit low degradation rates even in this early stage of their development.<<ETX>>