Actinic defect counting statistics over 1-cm2 area of EUVL mask blank
As a continuation of comparison experiments between EUV inspection and visible inspection of defects on EUVL mask blanks, we report on the result of an experiment where the EUV defect inspection tool is used to perform at-wavelength defect counting over 1 cm2 of EUVL mask blank. Initial EUV inspection found five defects over the scanned area and the subsequent optical scattering inspection was able to detect all of the five defects. Therefore, if there are any defects that are only detectable by EUV inspection, the density is lower than the order of unity per cm2. An upgrade path to substantially increase the overall throughput of the EUV inspection system is also identified in the manuscript.
Predictive model of the cost of extreme-ultraviolet lithography masks
A model has been developed to predict the cost of extreme ultraviolet lithography (EUVL) masks. The mask blank for EUVL consists of a low thermal expansion material substrate having a square photomask form factor and is coated with reflective Mo/Si multilayers. Absorber layers are deposited on the multilayer and patterned. EUVL mask patterning will use evolutionary improvements in mask patterning and repair equipment. One of the challenges in implementing EUVL is to economically fabricate multilayer-coated mask blanks with no printable defects. The model of mask cost assigns yield and time required for each of the steps in fabricating EUVL masks from purchase of a polished substrate to shipment of a patterned mask. Data from present multilayer coating processes and present mask patterning processes are used to estimate the future cost of EUVL masks. Several of the parameters that significantly influence predicted mask cost are discussed in detail. Future cost reduction of mask blanks is expected from learning on substrate fabrication, improvements in low defect multilayer coating to consistently obtain <0.005 defects cm-2, and demonstration of multilayer smoothing which reduces the printability of substrate defects. The model predicts that the price range for EUVL masks in production will be S30-40K, which is comparable to the price of complex phase shift masks needed to use optical lithography for 70 nm critical dimension patterning.
Stereoselective disposition of ibuprofen enantiomers in infants.
The pharmacokinetics of the enantiomers of ibuprofen were investigated after oral administration of a single 7.6 +/- 0.3 mg kg-1 dose of the racemate in 11 infants. Mean (+/- s.d.) half-lives were 1.6 +/- 0.5 h for S(+) and 1.5 +/- 0.5 h for R(-) and mean (+/- s.d.) AUC values were 31.5 +/- 14.3 mg l-1 h for S(+) and 36.6 +/- 13.8 mg l-1 h for R(-). Since plasma concentrations of the active S(+)-isomer were lower than those reported in adults, a higher dosage might be required in infants.