Application of Acoustic Agglomeration to Reduce Fine Particle Emissions from Coal Combustion Plants
Removal of fine particles (smaller than 2.5 μm) from industrial flue gases is, at present, one of the most important problems in air pollution abatement. These particles, which are hazardous because of their ability to penetrate deeply into the lungs, are difficult to remove by conventional separation technology. Sonic energy offers a means to solve this problem. The application of a high-intensity acoustic field to an aerosol induces agglomeration processes which changes the size distribution in favor of larger particles, which are then easier to precipitate with a conventional separator. In this work, we present a semiindustrial pilot plant in which this process is applied for reduction of particle emissions in coal combustion fumes. This installation basically consists of an acoustic agglomeration chamber with a rectangular cross-section, driven by four high-power and highly directional acoustic transducers of 10 and/or 20 kHz, and an electrostatic precipitator (ESP). In the experiments, a fluidized be...
Macrosonics: Phenomena, transducers and applications
15 pages, 17 figures.-- PACS nrs.: 43.35; 43.25.-- Communication presented at: Forum Acusticum Sevilla 2002 (Sevilla, Spain, 16-20 Sep 2002), comprising: 3rd European Congress on Acoustics; XXXIII Spanish Congress on Acoustics (TecniAcustica 2002); European and Japanese Symposium on Acoustics; 3rd Iberian Congress on Acoustics.-- Also published in the special issue of the journal Revista de Acustica, Vol. XXXIII, year 2002: http://digital.csic.es/handle/10261/4862.
Photoreflectance characterization of vanadium-doped GaAs layers grown by metalorganic vapor phase epitaxy
Abstract We characterized the vanadium-doped (GaAs:V) layers grown on GaAs substrate by metalorganic vapor phase epitaxy. The conductivity of the samples is checked by the Hall effect measurements, and it is n type with electrons concentration ranging from 2×10 13 to 2×10 17  cm −3 . We used the photoreflectance technique (PR) to study the effect of vanadium doping on the optical properties of GaAs. Our experimental results show that the built-in electric field F and the broadening parameter Γ 0 increase with V-doping concentration. Furthermore, the temperature dependence of the built-in electric field and the broadening parameter of GaAs:V samples have been investigated by PR. It has been observed that these parameters increase with increasing temperature. The decrease of the built-in electric field with decreasing temperature is due to the photovoltage effect.We characterized the vanadium-doped GaAs (GaAs:V) layers grown on GaAs substrate by metalorganic vapor phase epitaxy.