Symmetric 10G-EPON ONU transceiver integrated with newly-developed burst-mode pre-bias timing control IC
We developed symmetric 10G-EPON ONU transceiver fully compliant with IEEE802.3av PR30. Output power of +5 dBm, sensitivity of -32.4 dBm, and fast LD turn-on/off time of 10 ns/7 ns were successfully achieved by newly-developed burst-mode pre-bias timing control IC.
Design and Characteristics of Guardring-Free Planar AlInAs Avalanche Photodiodes
This paper reports a guardring-free planar AlInAs avalanche photodiode (APD) for optical fiber communications. AlInAs APDs can achieve a larger gain-bandwidth product (GBP) with lower excess noise than commercial InP APDs, and the guardring-free planar structure enables these superior AlInAs APDs to have both a low dark current and high reliability for practical use. We present the structure, fabrication, designs, APD characteristics, and receiver sensitivity, systematically. The guardring-free planar structure and its peculiarities are described, and we show APD designs for 2.5-Gb/s and 10-Gb/s applications and their characteristics. A 0.2-mum -thick AlInAs multiplication layer achieves a GBP of 120 GHz and an excess noise factor of 2.9 at a multiplication factor of 10. Their dark currents are less than 20 nA and their lifetime is evaluated to be 25 million hours at 85degC. Lastly, we demonstrate that the guardring-free planar AlInAs APDs with a transimpedance amplifier achieve the remarkable sensitivity of -37.0 dBm at a bit error rate of 10-10 for 2.5-Gb/s signals and of -29.9 dBm at a bit error rate of 10-12 for 10-Gb/s signals. This performance indicates that the guardring-free planar AlInAs APDs have made great advances against commercial InP APDs and other AlInAs APDs.
Lateral n-p-n avalanche photodiode with an AlInAs multiplication layer
A quasi-planar AllnAs avalanche photodiode (APD) with a lateral n-p-n structure for optical fibre communications is reported. Although both the anode and the cathode contact the n-type regions, it is demonstrated that the n-p-n APD has the same performance as a normal p-n APD. The n-p-n structure enables the p-type conversion process of thermal Zn diffusion to be omitted, and AlInAs with a large gain bandwidth product and low noise to be utilised for a multiplication region. The n-p-n AlInAs APDs can provide better receiver sensitivity at 10 Gbit/s than commercially available InP APDs.