Single step deposition method for nearly stoichiometric CuInSe2 thin films
Abstract This paper reports the production of high quality copper indium diselenide thin films using pulsed DC magnetron sputtering from a powder target. As-grown thin films consisted of pin-hole free, densely packed grains. X-ray diffraction showed that films were highly orientated in the (112) and/or (204)/(220) direction with no secondary phases present. The most surprising and exciting outcome of this study was that the as-grown films were of near stoichiometric composition, almost independent of the composition of the starting material. No additional steps or substrate heating were necessary to incorporate selenium and create single phase CuInSe2. Electrical properties obtained by hot point probe and four point probe gave values of low resistivity and showed that the films were all p-type. The physical and structural properties of these films were analyzed using X-ray diffraction, scanning electron microscopy and atomic force microscopy. Resistivity measurements were carried out using the four point probe and hot probe methods. The single step deposition process can cut down the cost of the complex multi step processes involved in the traditional vacuum based deposition techniques.
Electrical and optical study of Cu(In, Ga)Se2 co-evaporated thin films
Abstract Co-evaporation technique from three sources was used to prepare Cu(In, Ga)Se2 polycrystalline thin films for photovoltaic conversion. Their conductivity was studied in the range 20–300 K. The grain boundary scattering mechanism is mainly responsible for the diffusion process in the latter materials. In the low temperature region, we interpret the data in terms of Mott law and the analysis is very consistent with the variable range hopping. However, thermoionic emission is predominant at high temperatures. When the conductivity deviates from the classical grain boundary conduction models, inhomogeneity is then considered and parameters such as the standard deviation and the mean potential barrier height are derived. Transmittance measurements yielded band gap values of 1.07 and 1.64 eV for CuInSe2 and CuGaSe2, respectively.
Neutron Residual Stress Measurements on Rail Sections for Different Production Conditions
Rail sectioning with subsequent neutron diffraction experiments has been used to assess residual stresses in the rails. In this study we present the results of neutron stress measurements performed at the NIST Center for Neutron Research (NCNR) on rail sections from rails that were produced under various conditions. Specifically, these are air-cooled, air-cooled and roller-straightened, head-hardened and head-hardened and roller-straightened. More significantly, a head-hardened and roller-straightened rail was also studied after service to elucidate evolution of the service-induced residual stresses. In the latter case both a transverse-cut slice and the central region of a 0.53 m long piece were studied. Measurements on this piece are the first in which triaxial stresses have been determined for an intact rail. Neutron strain measurements with 3×3×3 mm3 spatial resolution were successfully employed for transversally cut slices to verify the difference in the stress state depending on the production process. Although examination of slices allows determination of only two-dimensional stresses in the plane of the slice, additional measurements on obliquely-cut slices, which were also carried out, and utilization of FEM gives the possibility of reconstructing the full triaxial stress distribution. Together, these approaches provide a better understanding of rail fabrication and the possibility of improving the durability and safety of rails in the future.Copyright © 2004 by ASME