Aeroelastic Calculations Using CFD for a Typical Business Jet Model
Two time-accurate Computational Fluid Dynamics (CFD) codes were used to compute several flutter points for a typical business jet model. The model consisted of a rigid fuselage with a flexible semispan wing and was tested in the Transonic Dynamics Tunnel at NASA Langley Research Center where experimental flutter data were obtained from M(sub infinity) = 0.628 to M(sub infinity) = 0.888. The computational results were computed using CFD codes based on the inviscid TSD equation (CAP-TSD) and the Euler/Navier-Stokes equations (CFL3D-AE). Comparisons are made between analytical results and with experiment where appropriate. The results presented here show that the Navier-Stokes method is required near the transonic dip due to the strong viscous effects while the TSD and Euler methods used here provide good results at the lower Mach numbers.
Calculation of AGARD Wing 445.6 Flutter Using Navier-Stokes Aerodynamics
The flutter characteristics of the first AGARD standard aeroelastic configuration for dynamic response, Wing 445.6, are studied using an unsteady Navier-Stokes algorithm in order to investigate a previously noted discrepancy between Euler flutter characteristics and the experimental data. The algorithm, which is a three-dimensional, implicit, upwind Euler/Navier-Stokes code (CFL3D Version 2.1), was previously modified for the time-marching, aeroelastic analysis of wings using the unsteady Euler equations. These modifications include the incorporation of a deforming mesh algorithm and the addition of the structural equations of motion for their simultaneous time integration with the governing flow equations. In this paper, the aeroelastic method is extended and evaluated for applications that use the Navier-Stokes aerodynamics. The paper presents a brief description of the aeroelastic method and presents unsteady calculations which verify this method for Navier-Stokes calculations. A linear stability analysis and a time-marching aeroelastic analysis are used to determine the flutter characteristics of the isolated 45° swept-back wing. Effects of fluid viscosity, structural damping, and number of modes in the structural model are investigated. For the linear stability analysis, the unsteady generalized aerodynamic forces of the wing are computed for a range of reduced frequencies using the pulse transfer-function approach. The flutter characteristics of the wing are determined using these unsteady generalized aerodynamic forces in a traditional V-g analysis. This stability analysis is used to determine the flutter characteristics of the wing at free-stream Mach numbers of 0.96 and 1.141 using the generalized aerodynamic forces generated by solving the Euler equations and the Navier-Stokes equations. Time-marching aeroelastic calculations are performed at a free-stream Mach number of 1.141 using the Euler and Navier-Stokes equations to compare with the linear V-g flutter analysis method. The V-g analysis, which is used in conjunction with the time-marching analysis, indicates that the fluid viscosity has a significant effect on the supersonic flutter boundary for this wing while the structural damping and number of modes in the structural model have a lesser effect.
Ultrathin Wafer Pre-Assembly and Assembly Process Technologies: A Review
Ultrathin silicon wafer technology is reviewed in terms of the semiconductor applications, critical challenges, and wafer pre-assembly and assembly process technologies and their underlying mechanisms. Mechanical backgrinding has been the standard process for wafer thinning in the semiconductor industry owing to its low cost and productivity. As the thickness requirement of wafers is reduced to below 100 μm, many challenges are being faced due to wafer/die bow, mechanical strength, wafer handling, total thickness variation (TTV), dicing, and packaging assembly. Various ultrathin wafer processing and assembly technologies have been developed to address these challenges. These include wafer carrier systems to handle ultrathin wafers; backgrinding subsurface damage and surface roughness reduction, and post-grinding treatment to increase wafer/die strength; improved wafer carrier flatness and backgrinding auto-TTV control to improve TTV; wafer dicing technologies to reduce die sidewall damage to increase die strength; and assembly methods for die pick-up, die transfer, die attachment, and wire bonding. Where applicable, current process issues and limitations, and future work needed are highlighted.