Twin generation in zinc-blende type III–V compound semiconductors: New insights from an InP case study
The type of twinning in zincblende-or sphalerite-type III-V compound semiconductors is well known. However, its detailed formation mechanism, although intensively studied in the eighties and nineties, is not entirely understood. In addition to a lot of empirical observations, there is a theoretical approach, published in 1995 [1] and improved in 1998 [2]. The latter predicts a correlation between crystal slope angle a and twin generation frequency. However, a critical overview of our own experimental results on GaAs and InP, grown by LEC (Liquid Encapsulated Czochralski) and VCz (Vapour Pressure controlled Czochralski) techniques, leads to no unambiguous relation between twin formation and crystal slope angle. This paper gives a comparison between experimental results and the above mentioned theory, revealing that twinning is more correlated to dynamical effects like oscillations of growth rate, i.e. noise of the system.
Interface and facet control during Czochralski growth of (111) InSb crystals for cost reduction and yield improvement of IR focal plane array substrates
Focal plane arrays (FPAs) made on InSb wafers are the key cost-driving component in IR imaging systems. The electronic and crystallographic properties of the wafer directly determine the imaging device performance. The “facet effect” describes the non-uniform electronic properties of crystals resulting from anisotropic dopant segregation during bulk growth. When the segregation coefficient of dopant impurities changes notably across the melt/solid interface of a growing crystal the result is non-uniform electronic properties across wafers made from these crystals. The effect is more pronounced in InSb crystals grown on the (111) axis compared with other orientations and crystal systems. FPA devices made on these wafers suffer costly yield hits due to inconsistent device response and performance. Historically, InSb crystal growers have grown approximately 9-19 degree off-axis from the (111) to avoid the facet effect and produced wafers with improved uniformity of electronic properties. It has been shown by researchers in the 1960s that control of the facet effect can produce uniform small diameter crystals. In this paper, we share results employing a process that controls the facet effect when growing large diameter crystals from which 4, 5, and 6” wafers can be manufactured. The process change resulted in an increase in wafers yielded per crystal by several times, all with high crystal quality and uniform electronic properties. Since the crystals are grown on the (111) axis, manufacturing (111) oriented wafers is straightforward with standard semiconductor equipment and processes common to the high-volume silicon wafer industry. These benefits result in significant manufacturing cost savings and increased value to our customers.
The Influence of the Supervision of Psychotherapy upon being Therapeutic: II: Modes of Influence of the Supervisory Relationship *
Through supervision, the student develops those innate personal characteristics which are highly important in being therapeutic. In making conscious use of “reality identification” by the student with his teacher, we must take care to avoid certain pitfalls. What is not wanted is transference identification. To help avoid this, we must select appropriate teachers as supervisors. The student should also have more than one supervisor, as this tends to protect against the development of over-idealization on the part of the student, and of omnipotence on the part of the teacher. Personal characteristics of both students and supervisors are extremely important. A good supervisory experience is the most likely vehicle for developing those qualities in the student which will, in time, lead him to function most therapeutically.