Multi-stacked InAs/GaNAs quantum dots with direct Si doping for use in intermediate band solar cell
We investigated the effect of direct doping of quantum dots (QDs) with Si on the performance of QD solar cells (QDSCs). In order to control the Fermi level of intermediate band (IB) region, 25 layers of stacked InAs/GaNAs QDs were directly doped with Si impurity during the self-assembling stage of growth. A QDSC with Si doping shows an improved quantum efficiency (QE) in shorter wavelength region, which is from p-GaAs emitter layer. Further, the fact that applied external bias does not affect QE spectrum as well as photocurrent in QDSC with Si direct doping suggests that carrier collection has been enhanced in QD region as a result of reduction of recombination.
Photoluminescence and far-infrared absorption in Si-doped self-organized InAs quantum dots
We report far-infrared absorption in directly doped self-organized InAs quantum dots. Photoluminescence spectra demonstrate a blue shift in peak intensity for increasing doping in the quantum dots. Far-infrared absorption measurements using a Fourier transform infrared spectrometer show absorption in the range of 13–18 μm for quantum dots with Al0.15Ga0.85As and GaAs as the barrier material.
First Insights into the Draft Genome Sequence of the Endophyte Paenibacillus amylolyticus Strain GM1FR, Isolated from Festuca rubra L.
ABSTRACT Paenibacillus amylolyticus strain GM1FR is an endophyte isolated from aerial plant tissues of Festuca rubra L. Here, we report the draft genome sequence (7.3 Mb) of GM1FR containing 6,241 protein-coding genes, some of which are potentially involved in plant growth promotion and biocontrol.