Superconducting bending magnets for compact synchrotron radiation source
A 180 degrees superconducting magnet has been constructed for a synchrotron radiation source. The authors describe the superconducting magnet design and some component test results for the compact synchrotron radiation source. The magnetic field at the electron orbit is 4.5 T. The bending radius is 0.593 m. The magnet has several features such as low liquid helium consumption ratio, persistent current operation, high homogeneous magnetic fields, and leakage flux shielding by the iron core surrounding the cryostat. Component tests of persistent current switches of 15 Omega and 3 Omega and a superconducting joint test have been performed.<<ETX>>
Superconducting compact sources for lithography (invited)
The production of advanced microchips by x‐ray lithography seems likely to become the first large‐scale industrial application of synchrotron radiation. Of all the possible x‐ray sources, only storage rings have sufficent power to achieve economic throughputs. For this reason, many rings have been and are being built worldwide for lithography. Superconducting rings are preferred because their higher magnetic fields make them more compact.
Oxygen plasma etching resistance of plasma polymerized organometallic film
The oxygen plasma etching resistance of plasma polymerized organometalic film was measured. The films were deposited by downstream plasma deposition using gaseous mixtures of an organic monomer (C3H6) and a metal‐containing monomer tetramethyltin or tetramethylsilane. By changing the flow‐rate ratio of both monomers, the metal content of the film was reproducibly varied from 0% to 27%. It was found that the O2 reactive ion etching rate depended on metal content in polymer, discharge power density, and oxygen gas pressure. High oxygen plasma etching resistance was obtained for films which contained even a few percent of metal. From the results of electron spectroscopy for chemical analysis and Auger electron spectroscopy measurements, it was observed that the metal‐oxidized layer was formed on the surface during oxygen plasma etching.