Transferring porous layer from InP wafer based on the disturbance
We present a new method to transfer the three dimensional (3D) porous layer from InP wafer based on the disturbance, during electrochemical etching of n-InP (100) with chronopotentiometry with current ramp in 3 mol-L−1 NaCl solution. The potential bursting phenomenon was observed due to the disturbing instantaneously. In addition, the correlation between the amplitude of the potential and the porous layers separated from the InP wafer was discussed.
Self-organization phenomena at semiconductor electrodes
Anodically dissolving semiconductor electrodes such as Si, Ge, GaAs, InP, or GaP exhibit a number of self-organization phenomena such as current oscillations in time and/or in space; some phenomena of this kind are also found during the anodic formation of porous metal oxides. Current oscillations in space are expressed in correlated pore growth and other effects like pore diameter oscillation; this will be introduced and discussed in some detail. Some less well-known effects like self-induced growth mode transitions or pore density oscillations are also included. The paper endeavors to sort through the various self-organization phenomena observed so far and to look for underlying principles that transcend semiconductor-specific dissolution chemistry. Intrinsic time and length scales provide one such principle and this will be discussed with emphasis on the so-called current burst model originally developed for current oscillations in time.
Chromatographic analysis of elastomer antidegradants and accelerators
Summary The use of various chromatographic methods in the analysis of all classes of elastomer antidegradants and accelerators is reviewed. The review of extraction methods is also included.