Transferring porous layer from InP wafer based on the disturbance
We present a new method to transfer the three dimensional (3D) porous layer from InP wafer based on the disturbance, during electrochemical etching of n-InP (100) with chronopotentiometry with current ramp in 3 mol-L−1 NaCl solution. The potential bursting phenomenon was observed due to the disturbing instantaneously. In addition, the correlation between the amplitude of the potential and the porous layers separated from the InP wafer was discussed.
Observation of crossing pores in anodically etched n-GaAs
Pores in GaAs in the micrometer range and oriented in 〈111〉 directions have been observed during the anodization of GaAs in aqueous HCl electrolytes. A direct evidence of pores intersection is presented which is a very promising feature for three-dimensional micro- and nanostructuring of III–V compounds for the production of photonic materials.
Acetylation analysis of saccharides. 2. Microanalysis of neutral glycosphingolipids by means of acetylation with radioactive acetic anhydride.
Abstract The quantitative analysis of mixtures of glycosphingolipids by acetylation with radioactive acetic anhydride and separation by thin-layer chromatography is described. The method was primarily developed for screening of glycosphingolipid composition of tissues, cultured cells, and virus preparations. The sensitivity and linearity of the method is demonstrated. Although theoretically a much higher sensitivity is achievable, in practive about 10 −9 g of glycosphingolipid can be detected and tentatively identified. As an example, the acetylation pattern of lipids from a preparation of herpes simplex virus is demonstrated.