Low threshold current MOVPE grown GaInAs-Al(Ga)InAs separate confinement heterostructure multiquantum well metal-clad ridge-waveguide lasers emitting at 1585 nm
GaInAs-Al(Ga)InAs separate confinement heterostructure (SCH) multiquantum-well (MQW) metal-clad ridge-waveguide (MCRW) laser diodes were successfully fabricated for the first time from layer structures grown by atmospheric pressure (AP) metalorganic vapor-phase epitaxy (MOVPE) on InP substrate without any use of phosphine. CW operation of 2.9- mu m-wide and 400- mu m-long MCRW laser diodes emitting at 1585 nm was demonstrated with a minimum threshold current of 38 mA.<<ETX>>
1.55 mu m gain-coupled quantum-well distributed feedback lasers with high single-mode yield and narrow linewidth
The fabrication and characteristics of gain-coupled 1.55- mu m GaInAlAs quantum-well metal-clad ridge-waveguide distributed-feedback lasers are discussed. The gain-coupling mechanism was provided by a thin ternary loss grating layer with an estimated gain-coupling strength of about 30/cm. For as-cleaved devices, the single-mode yield was as high as 70 and 95% for 600- and 800- mu m-long devices, respectively. Typical threshold currents were 40 and 55 mA, respectively. Both the high single-mode yield and the pronounced asymmetric spectra were calculated theoretically and give a strong indication that a significant amount of gain coupling was realized in the laser structure. For a 600- mu m-long device, a continuous-wave (CW) output power of 10 mW and a minimum linewidth of 1.6 MHz were measured.<<ETX>>
Photoreflectance characterization of vanadium-doped GaAs layers grown by metalorganic vapor phase epitaxy
Abstract We characterized the vanadium-doped (GaAs:V) layers grown on GaAs substrate by metalorganic vapor phase epitaxy. The conductivity of the samples is checked by the Hall effect measurements, and it is n type with electrons concentration ranging from 2×10 13 to 2×10 17  cm −3 . We used the photoreflectance technique (PR) to study the effect of vanadium doping on the optical properties of GaAs. Our experimental results show that the built-in electric field F and the broadening parameter Γ 0 increase with V-doping concentration. Furthermore, the temperature dependence of the built-in electric field and the broadening parameter of GaAs:V samples have been investigated by PR. It has been observed that these parameters increase with increasing temperature. The decrease of the built-in electric field with decreasing temperature is due to the photovoltage effect.We characterized the vanadium-doped GaAs (GaAs:V) layers grown on GaAs substrate by metalorganic vapor phase epitaxy.