Multifunction GaAs MMIC transmitter/receiver for onboard satellite equipment
This paper describes the development of a new GaAs MMIC to be used in transmit/receive modules for S band transponders. The IC, which includes five different functions, reduces the sue of the system whilst maintaining and even improving system performance. Amplification, phase shifting, and mixing are some of the functions integrated in the same chip. The goal of the work is to reduce the number, size, and consequently, the cost of the circuitry currently in use through an European commercial Enhancement/Depletion (E/D) pHEMT process, compatible with low noise reception. A maximum conversion gain more than 54 dB has been achieved with a gain control more than 27 dB. A 0 dBm output power at 1dB compression point (P1dB) has been measured when a CW stimulus was used as input signal, while more than 35 dB of Adjacent Channel Power Ratio (ACPR) was tested for a BPSK input signal.
Dual band monolithic AGC amplifier for space applications based on a commercial 0.2 /spl mu/m PHEMT technology
This paper reports the design and measurement of a dual band monolithic AGC amplifier to be used in transmit/receive modules for Telemetry, Tracking and Control (TTC) of satellite systems. The amplifier is also included in a multifunction Monolithic Microwave Integrated Circuit, MMIC, containing frequency converters. The block diagram of this chip is shown. The goal of the work is to reduce the number, size, and consequently, the cost of the circuitry actually in use, whilst maintaining performance, through the use of mature GaAs PHEMT technology. Issues such as circuit topologies, dc power consumption, circuit area minimization and optimization are all important factors that are addressed during the design.
8 W C-band MMIC amplifier for space applications
A very high efficiency, low distortion C-band MMIC amplifier using a linear and nonlinear models of the PHEMT devices has been developed. The double stage MMIC amplifier fabricated with 2/spl times/3.6 mm gate width PHEMT and 2/spl times/12 mm gate width PHEMT exhibits an output power of 39 dBm at 2 dB of gain compression, a linear gain of 27 dB and an associated PAE of 42% in the frequency range of 3.5-4.4 GHz. These excellent results are performed by developing an exact non-linear model of the PHEMT device and optimizing the matching network of the amplifier.