About methodical errors in studies of mass transfer processes induced by intense pulsed ion beams in solids
The present paper briefly discusses the questions of accuracy of depth profiling techniques in studies of mass transfer processes induced by intense pulsed ion beams (IPIB) in solids. The best measurement tools provide good precision only. An acceptable reproducibility, correctness, and, finally, accuracy of measurement are a result of complete elimination all of the systematic errors. The first ones are caused by a dependence of main SIMS and AES analytical characteristics, ionization coefficients and sputtering factors, on a degree of IPIB exposure. It is shown that the preferable application of nuclear analysis methods, RBS and PIGE, avoids these errors. A mechanical polishing conventionally applied for surface preparation of specimens under investigation engenders to unpredictable changing of mechanical, electric and thermodynamic properties of the surface layer, for at least 1 /spl mu/m depth in the case of Cu surface polishing and for the depth less than the previous one by the factor of 3-5 for /spl alpha/-Fe, steel, Zr, etc. Surface preparation with electrochemical polishing allows a second kind of error to be avoided. A third kind of systematic error is connected with vagueness of the main IPIB parameters (ion species, energy distribution, flux) at the investigated section of the modified sample. Use of more detailed specimens analyzed by cross section is suggested in order to avoid these errors.
Intense Ion-Beam Treatment of Materials
Nastasi, J. Olson, A. Potyomkin, H. Schmidt, B. Semukhin, D. Tallant, M. Thompson, W. Waganaar, K. Walter, D. Williams, and A. Zakowtayev, in Proc. 3rd Int. Conf. on Applications of Diamond Films and Related Materials, edited by A. Fe ldman , Y. Tzeng,. W. Yarbrough, M. Yoshikawa, and M. Murakawa (National Institute of Standards and Technology, Gaithersburg, MD, 1995) p. 723. 14. Yu.F. Ivanov, V.M. Matvienko, A.V. Potyomkin, G.E. Remnev, and A.N. Zakoutayev, in Ion-Solid Interactions for Materials Modification and Processing, edited by D.B. Poker, D. Ila, Y-S. Cheng, L.R. Harriott, and T.W. Sigmon (Mater. Res. Soc. Symp. Proc. 396, Pittsburgh) in press. 15. A.D. Pogrebnjak, Phys. Status Solidi A 86 (1984) p. 191. 16. R. Fastow, Y. Maron, and J. Mayer, Phys. Rev. B 31 (1985) p. 893. 17. E.Yu. Bojarko, A.A. Verigin, V.P. Koscheev, Yu. Krjuchkov, and A.D. Progrebnjak, Nucl. Instrum. Meth. in Phys. Res. B 17 (1986) p. 162. 18. A.N. Didenko, I.F. Isakov, and G.E. Remnev, ibid. p. 165. 19. A.D. Pogrebnjak, G.E. Remnev, and S.V. Plotnikov, Mater. Sci. Eng. A 115 (1989) p. 175. 20. R. Fastow, R. Brener, M. Eizenberg, and J.W. Mayer, /. Vac. Sci. Technol. A 5 (1987) p. 164. 21. R. Fastow and J.W. Mayer, /. Appl. Phys. 61 (1987) p. 175. 22. A.D. Pog rebn j ak , I.F. I sakov, M.S. Opekunov, Sh.M. Ruzimov, A.E. Ligachev, A.N. Nesmelov, and I.B. Kurakin, Phys. Lett. A 123 (1987) p. 410. 23. A.G. Pogrebnjak, G.E. Remnev, S.A. Chistjakov, and A.E. Ligachev, Physika 1 (1987) p. 52. 24. Y. Nakagawa, T. Ariyoshi, M. Itami, and Y. Fujii, Jpn. }. Appl. Phys. 27 (1988) p. L719. 25. A.D. Pogrebnjak , G.E. Remnev, I.B. Kurakin, and A.E. Ligachev, Nucl. Instrum. Meth. in Phys. Res. B 36 (1989) p. 286. 26. S.A. Chistjakov, A.G. Pogrebnjak, and G.E. Remnev, ibid. 42 (1989) p. 342. 27. Y. Nakagawa, T. Ariyoshi, H. Hanjo, S. Tsutsumi, Y. Fujii, M. Itami, A. Okamoto, S. Ogawa, T. Hamada, and F. Fukumaru, ibid. 39 (1989) p. 603. 28. G.E. Remnev and V.A. Shulov, Lasers and Particle Beams 11 (1993) p. 707. 29. R.W. S t i n n e t t , R.G. Buchhe i t , F.A. Greulich, C.R. Hills, A.C. Kilgo, D.C. Mclntyre, J.B. Greenly, M.O. Thompson, and D.J. Rej, in Materials Synthesis and Processing Using Ion Beams, edited by R.J. Culbertson, O.W. Holland, K.S. Jones, and K. Maex (Mater. Res. Soc. Symp. Proc. 316, Pittsburgh, 1994) p. 521. 30. V.A. Shwlov, N.A. Nochevnaya, G.E. Remnev, I.F. Isakov, I.G. Polyakova, and N.I. Shabanov, Sov. Tech. Phys. Lett. 17 (1991) p. 38. 31. W.K. Chu, S.R. Mader, E.F. Gorey, E.E. Baglin, R.T. Hodgson, J.M. Neri, and D.A. Hammer, Nucl. Instrum. Meth. in Phys. Res. 194 (1982) p. 443. 32. T. Feuer, S. Wahl, and H. Langhoff, J. Appl. Phys. 74 (1993) p. 3523. 33. K. Yatsui, C. Grigoriu, H. Kubo, K. Masugata, and Y. Shimotori, Appl. Phys. Lett. 67 (1995) p. 1214. 34. D.J. Rej, R.R. Bartsch, H.A. Davis, R.J.
Finite Difference Modeling on the Temperature Field of Substrate in Friction Surfacing
Friction surfacing is an advanced process of great potential, especially in the field of repair and reclamation of worn and damaged components. As a kind of thermal processing technology, the temperature profile and changes of the substrate in friction surfacing are important factors to get coatings of high quality. In this paper, the temperature field of the substrate during the process is simulated by finite difference method. The results are consistent with experiments, reappearing the temperature change of the substrate during friction surfacing, allowing further study on figuration and quality of coatings.