Extremely low threshold InGaSsp/InP DFB PPIBH laser diode
We report on an extremely low threshold InGaAsP/InP DFB laser realized by an MOCVD/LPE hybrid process.
1.3μm InGaAsP/InP distributed-feedback P-substrate partially inverted buried-heterostructure laser diode
A novel 1.3μm InGaAsP/lnP distributed-feedback buried-heterostructure laser diode on p-type InP substrate has been developed utilising a dopant diffusion technique. The laser has achieved a threshold current as low as 20 mA and high output power of 32 mW under CW and SLM operation.
High power output InGaAsP/InP buried heterostructure lasers
A novel InGaAsP/InP buried heterostructure (BH) laser was fabricated on a p-InP substrate. This laser can provide a peak pulse output of 0.8 W per facet with a stable lateral transverse mode oscillation and enables the fault location measurement of a single mode fibre cable over 20 km.