A planar transistor for the 32-nm node and beyond with an ultra-shallow junction fabricated using in-situ doped selective Si epitaxy
Shallower junctions must be formed to make transistors work for the 32-nm node. Many kinds of technologies, such as co-implantation, laser spike annealing (LSA), and flash lamp annealing, have been energetically studied to form ultra-shallow junctions. We focused on in-situ doped selective Si epitaxy, with which the short channel effect and the parasitic resistance can be made compatible. Using this epitaxy, ultra-shallow junctions (with effective junction depths (Xj,eff) under 9 nm@5E18) were formed, and 20-nm or shorter PMOS gate transistors were fabricated using the epitaxy
A Promising Planar Transistor with in-situ Doped Selective Si Epitaxy Technology (GORES MOSFET) for 32nm node and beyond
We demonstrated 40nm gate length "gate overlapped raised extension structure: GORES MOSFET" without halo implantation and prove that the ultra shallow junction (USJ) could coexist with the reducing parasitic resistance in GORES MOSFET. It is the new concept planar transistor with the gate overlapping the in-situ doped epitaxial extension to break through the trade off relation between reducing parasitic resistance and suppression of the short channel effect (SCE) (Tateshita, 2005). As a matter of course, it has the USJ and the low parasitic resistance (LPR) for 32nm node with in-situ doped selective Si epitaxy (ISDSE)
Effect of stress conditions on collapse deformation behavior of a rockfill material
A set of saturated and dry-saturated large-scale triaxial tests were conducted in order to explore the effects of stress conditions on the saturation-induced collapse deformation behavior of a rockfill material. Specimens were tested in different confining pressures and for dry-saturated tests the specimens were submerged in various shear stress levels. The results indicate that in all of the dry-saturated tests a sudden reduction in the volume of the specimens was observed during the submerging process. The ratio of the minimum axial strength of a submerged specimen (at the end of the saturation process) to the shear strength of the specimen before saturation is defined as the coefficient of stress recovery, Csr. Results of the dry-saturated tests showed that this ratio increases as the confining pressure increases and decreases by increasing the shear stress level. According to the results of dry-saturated tests the values of internal friction angle reduction caused by saturation (Δϕc), the ratio of the elasticity modulus of the material after saturation to its elasticity modulus in dry condition, i.e., Ewet/Edry, and also the saturation induced sudden volumetric strain (εvc) decrease as the confining pressure increases. However the shear stress level does not have any meaningful effect on the variation of Dfc, Ewet/Edry and (εvc).