A 7000-gate microprocessor on SOS&#8212;PULCE
An n-channel MOS LSI microprocessor integrating 20 000 transistors on a chip has been realized on a sapphire substrate utilizing the Coplanar-II process. It contains ALU, shifters, and 44 registers which are combined to three 16-bit buses. By utilizing three types of threshold voltage for load transistors, 28-percent reduction in power dissipation is achieved. The minimum cycle time is 200 ns. By using the Coplanar-II process, anomalous leakage currents due to parasitic transistors at the sides of island are suppressed. It is found that the silicon-on-sapphire (SOS) version operates 2.3 times faster than the bulk-silicon version, which is mainly explained by the parasitic capacitance ratio. Parallel-plate approximation in calculating a wiring capacitance results in an underestimate by a factor of 60 compared with taking the two-dimensional effect into account. It is verified that a) the observed yield of a very large SOS chip is higher than the value predicted from a randomly distributed defects model, and b) the yield-sensitive active area of an SOS is so small that it can compensate for the yield degradation due to the very large defects density on an SOS wafer.
Effect of heat treatment on residual stress and electron Hall mobility of laser annealed silicon‐on‐sapphire
The effect of heat treatment on electron Hall mobility and the residual stress of laser annealed silicon‐on‐sapphire (SOS) has been investigated using Hall effect measurements and laser Raman spectroscopy. The improvement in electron Hall mobility of SOS brought about by pulsed ruby‐laser annealing disappeared with subsequent heat treatment at temperatures higher than about 600°C. Raman spectroscopy measurements revealed that the residual stress in the silicon layer, regrown by the laser annealing, was tensile and that the observed decrease in electron Hall mobility was caused by stress changes from tension to compression which accompanied the heat treatment above about 600°C. These results showed that the SOS/metal‐oxide‐semiconductor field‐effect transistor (MOSFET) with improved channel mobility could be realized when it was fabricated from the silicon layer having tensile stress.
Comparative studies of α-Lactalbumin and lysozyme: Echidna lysozyme
Summaryα-Lactalbumin is a modifier protein for galactosyl transferase in the biosynthesis of lactose and lysozyme catalyses the cleavage of β(1–4) glycosidic linkages. It is now generally believed that α-lactalbumin and lysozyme have diverged from a common ancestor. Comparative studies of these proteins from several species are reported here.The presence of lactose and lactose synthetase activity is shown in mature milk samples from a variety of placental mammals (eutheria) and a pouch bearing mammal (marsupialia). The isolation of the α-lactalbumins involved and their properties are compared.The position is different in the milk samples of monotremes. The α-lactalbumin, lactose and lactose synthetase activity levels in the two platypus samples studied are very low. The levels of lactose and lactose synthetase activity in some echidna(Tachyglossus aculeatus) samples are low, but appreciable in others. No α-lactalbumin is present. The lysozyme activity is appreciable, some samples containing a different lysozyme from that present in others. One of these (designated echidna lysozyme I) is capable of lactose synthetase modifier activity in the presence of bovine “A protein”.The properties of this lysozyme are compared with those of lysozymes and α-lactalbumins from a variety of species and their significance is discussed.