InAs/InAsSb Type II Superlattice Mid Wavelength Infrared Focal Plane Array With Significantly Higher Operating Temperature Than InSb
We report focal plane array (FPA) results on a mid wavelength InAs/InAsSb type II strained layer superlattice (T2SLS) unipolar barrier infrared detector with a cutoff wavelength of 5.4 mm. For 300 K background in the 3 5 mm band, f/2 aperture, an FPA operating at 150 K exhibits a mean noise equivalent differential temperature (NEDT) of 18.5 mK, and an NEDT operability of 99.7% The NEDT distribution has a width of 8 mK, with no noticeable distribution tail, indicating excellent uniformity. The mean noise equivalent irradiance is 9.1 x 10<sup>11</sup> photons/sec cm<sup>2</sup> The mean quantum efficiency is 49.1% without antireflection coating, and the mean specific detectivity (D<sup>/sup> is 2.53 x 10<sup>11</sup> cm Hz<sup> 1/2 /sup>/W. Benefitting from an absorber material with a much longer Shockley Read Hall minority carrier lifetime, and a device architecture that suppresses generation recombination and surface leakage dark current, the InAs/InAsSb T2SLS barrier infrared detector FPA has demonstrated a significantly higher operating temperature than the mid wavelength infrared market leading InSb.
IEEE Photonics Journal