Measurement of the non radiative minority recombination lifetime and the effective radiative recombination coefficient in GaAs
The combination of time resolved (TR) and power dependent relative (PDR) photoluminescence (PL) measurements reveals the possibility of separating the radiative and non radiative minority carrier lifetimes and measuring the sample dependent effective radiative recombination coefficient in direct bandgap semiconductors. To demonstrate the method, measurements on 2 mm thick p type GaAs double hetero structures were conducted for various doping concentrations in the range of 5x1016 and 1x1018 cm 3. With a photon recycling factor of 0.76 0.04 the radiative recombination coefficient was determined to be (3.3+ 0.6)x10 10 cm3s 1 for the structures with a doping concentration below 1*1018 cm 3, whereas the effective radiative recombination parameter for an absorber thickness of 2 mm was directly measured to be (0.78+ 0.07) x10 10 cm3s 1. For a doping concentration of 1x1018 cm 3, the radiative recombination coefficient decreases significantly probably due to the degeneracy of the semiconductor.The combination of time resolved (TR) and power dependent relative (PDR) photoluminescence (PL) measurements reveals the possibility of separating the radiative and non radiative minority carrier lifetimes and measuring the sample dependent effective radiative recombination coefficient in direct bandgap semiconductors. To demonstrate the method, measurements on 2 mm thick p type GaAs double hetero structures were conducted for various doping concentrations in the range of 5x1016 and 1x1018 cm 3. With a photon recycling factor of 0.76 0.04 the radiative recombination coefficient was determined to be (3.3+ 0.6)x10 10 cm3s 1 for the structures with a doping concentration below 1*1018 cm 3, whereas the effective radiative recombination parameter for an absorber thickness of 2 mm was directly measured to be (0.78+ 0.07) x10 10 cm3s 1. For a doping concentration of 1x1018 cm 3, the radiative recombination coefficient decreases significantly probably due to the degeneracy of the semiconductor.
AIP Advances