Characterization and Comparison of Trench and Planar Silicon Carbide (SiC) MOSFET at Different Temperatures
In this paper, the static and dynamic characteristics of discrete 650 V and 1200 V trench TO 247 SiC MOSFET is evaluated and compared with a similar current rating 1200 V planar gate discrete TO 247 SiC MOSFET. The new trench MOSFET has promising application for vehicle charging and auxiliary power supply application due to the lower on state resistance and lower capacitance. Static characteristics for these devices are evaluated using a curve tracer for different device junction temperature A common double pulse test (DPT) platform is developed to evaluate the switching loss at different device junction temperature ranging from 25degC to 175degC. The experimental setup and results are presented for different load currents and temperature.
2018 IEEE Transportation Electrification Conference and Expo (ITEC)