High speed resistive switching in Pt/TiO2/TiN film for nonvolatile memory application
We have fabricated and investigated the bipolar resistive switching characteristics of Pt/rutile TiO2/TiN devices for resistance memory applications. Data writing for five level resistance states has been demonstrated by varying the amplitude of 5ns voltage pulses. In addition, data retention of more than 256h at 85degC and an excellent endurance of over 2x106cycles have been confirmed. These results indicate that Pt/TiO2/TiN devices have a potential for nonvolatile multiple valued memory devices.