Resistive switching memory devices based on all inorganic perovskite CsPbBr3 quantum dot
All inorganic perovskite quantum dots (QDs) have widely used in a lot of micro nano photoelectric devices. However, resistive random access memory (RRAM) devices based on All inorganic perovskite QDs are relatively scarce. In this work, a RRAM, which exhibits the write once read many times (WORM) memory effect, based on CsPbBr3 QDs was successfully fabricated by solution processed method at room temperature. The CsPbBr3 QDs based memory shows great reproducibility, good data retention ability, irreversible electrical transition from the high resistance state (HRS) or OFF state to the low resistance state (LRS) or ON state and the resistance ratio (ON/OFF) can reach almost 107. To study the CsPbBr3 QDs based WORM memory provides an opportunity to develop the next generation high performance and stable WORM devices.
Symposium on Novel Photoelectronic Detection Technology and Application