Monolithic integration of MoS2 based visible detectors and GaN based UV detectors
With the increasing demand for high integration and multi color photodetection for both military and civilian applications, the research of multi wavelength detectors has become a new research hotspot. However, current research has been mainly in visible dual or multi wavelength detectors, while integration of both visible light and ultraviolet (UV) dual wavelength detectors has rarely been studied. In this work, large scale and high quality monolayer MoS2 was grown by the chemical vapor deposition method on transparent free standing GaN substrate. Monolithic integration of MoS2 based visible detectors and GaN based UV detectors was demonstrated using common semiconductor fabrication technologies such as photolithography, argon plasma etching, and metal deposition. High performance of a 280 nm and 405 nm dual wavelength photodetector was realized. The responsivity of the UV detector reached 172.12 A/W, while that of the visible detector reached 17.5 A/W. Meanwhile, both photodetectors achieved high photocurrent gain, high external quantum efficiency, high normalized detection rate, and low noise equivalent power. Our study extends the future application of dual wavelength detectors for image sensing and optical communication.
Photonics Research