The synthesis of two dimensional transition metal dichalcogenide by cold wall chemical vapour deposition
The synthesis of monolayer transition metal dichalcogenides (TMDCs) by conventional hot walled CVD remains critical issues of large scale, spatial homogeneity and quality [1] Here we demonstrate a coldwall CVD (CW CVD) system with advanced functions for the growth of high quality wafer scale homogeneous monolayer molybdenum disulphide (MoS2) on various substrates [2] This automatic system can precisely control the temperatures of multizone, pressure and gaseous flow rate with individual precursors of Mo(CO)6 and sulfur. In addition, the system has high flexibility to be upgraded for extra functions such as plasma source, multi precursor supply and load lock system. The Raman spectrum of as synthesized MoS2 on 2 inch sapphire wafer shows the significant E2g and A1g peaks with 19cm 1 inter distance, and the photoluminescence (PL) spectrum shows an apparent peak at 650 nm. Both spectra reveal the monolayer and high quality feature of CW CVD synthesized MoS2. References [1] Lee, Y. H. Zhang, X. Q. Zhang, W. Chang, M. T. Lin, C. T. Chang, K. D. Yu, Y. C. Wang, J. T. W. Chang, C. S. Li, L. J. Lin, T. W. Advanced Materials 2012, 24, (17) 2320 2325. [2] Kang, K. Xie, S. Huang, L. Han, Y. Huang, P. Y. Mak, K. F. Kim, C. J. Muller, D. Park, J. Nature 2015, 520 (7549) 656 660.