Control of III/VI Ratios in the Preparation of ln2Se3 thin Films
CuInSe2 (CIS) thin films on glass substrates were successfully grown by the metal organic chemical vapour deposition method by using three precursors [Cu precursor, trimethyl indium (TMI) and hydrogen selenide (H2Se) The flow rates of TMI and H2Se can be adjusted independently to gain different lll/VI ratios, which is different from the single precursor technique. Good chalcopyrite phase from CIS films was demonstrated by X ray diffraction. The optical band gap of CIS thin films can be adjusted by controlling the growth conditions.