Co optimization method to reduce the pattern distortion caused by polarization aberration in anamorphic EUV lithography.
Extreme ultraviolet lithography is regarded as the most attractive technology to achieve 7 nm node and below. A new high numerical aperture anamorphic objective lens is designed to extend the single exposure resolution limit. However, the polarization aberrations (PAs) induced by the multilayer coatings on mirrors cause pattern distortions that cannot be neglected. In this paper, a source, mask, and process parameter co optimization method is developed to compensate for the pattern distortions caused by PAs and increase the process window (PW) We first present an asymmetric source represented by the superposition of Zernike polynomials to reduce the pattern placement error (PPE) Then, a weighted cost function that incorporates the influences of PAs is innovated. Finally, a gradient based statistical optimization method is adopted to minimize the cost function by optimizing the lithography system parameters alternately. Simulations at the 7 nm node of the 1D mask pattern indicate that for the system with a PA of marginal field, compared with our earlier work, the critical dimension error and PPE of the proposed method are reduced by 75.0% and 82.4% respectively, and the PW is increased by 97.4%
Applied optics