Breaking the Current Density Threshold in Spin orbit torque Magnetic Random Access Memory
Spin orbit torque magnetic random access memory (SOT MRAM) is a promising technology for the next generation of data storage devices. The main bottleneck of this technology is the high reversal current density threshold. This outstanding problem of SOT MRAM is now solved by using a current density of constant magnitude and varying flow direction that reduces the reversal current density threshold by a factor of more than the Gilbert damping coefficient. The Euler Lagrange equation for the fastest magnetization reversal path and the optimal current pulse are derived for an arbitrary magnetic cell. The theoretical limit of minimal reversal current density and current density for a GHz switching rate of the new reversal strategy for CoFeB/Ta SOT MRAMs are respectively of the order of $10^5$ A/cm$^2$ and $10^6$ A/cm$^2$ far below $10^7$ A/cm$^2$ and $10^8$ A/cm$^2$ in the conventional strategy. Furthermore, no external magnetic field is needed for a deterministic reversal in the new strategy.