MBE Growth and Photoluminescence characterization of InGaAsSb quantum well
The growth and chracterization of InGaAsSb quantum well structrure were conducted by moleculer beam epitaxy(MBE) and photoluminescence(PL).We studied the issues on the relation between the quality of InGaAsSb quantum well material and substrate temperature,well thickness.It is found that the material quality depends on the substrate temperature,and PL wavelength of material increases with the increasement of InGaAsSb quantum well thickness.