Turn OFF Transient Analysis of Superjunction IGBT
A turn OFF transient analysis of the superjunction (SJ) insulated gate bipolar transistor (IGBT) based on an analytical model as a function of structural parameters is presented in this paper. The physical phenomenon dependent on the doping density of the n /p pillar of the SJ IGBT could be explained using the analytical model to predict the static and transient characteristics. From this model, tradeoff between turn OFF loss and ON state voltage has been obtained, as verified by the TCAD simulations with a good agreement.
IEEE Transactions on Electron Devices