Non planar, multi gate InGaAs quantum well field effect transistors with high K gate dielectric and ultra scaled gate to drain/gate to source separation for low power logic applications
In this work, non planar, multi gate InGaAs quantum well field effect transistors (QWFETs) with high K gate dielectric and ultra scaled gate to drain and gate to source separations (LSIDE) of 5nm are reported for the first time. The high K gate dielectric formed on this non planar device structure has the expected thin TOXE of 20.5A with low JG, and high quality gate dielectric interface. The simplified S/D scheme is needed for the non planar architecture while achieving significant reduction in parasitic resistance. Compared to the planar high K InGaAs QWFET with similar TOXE, the non planar, multi gate InGaAs QWFET shows significantly improved electrostatics due to better gate control. The results of this work show that non planar, multi gate device architecture is an effective way to improve the scalability of III V QWFETs for low power logic applications.
2010 International Electron Devices Meeting