Design of Tunable Metamaterial Absorber Based on Graphene in Terahertz Frequency Range
In this article a three dimensional metamaterial absorber in terahertz frequency range has been designed using of patterned Graphene. By using the tunability of surface conductivity in Graphene and changing the chemical potential the tunability is possible in the absorber. The simulation results shows about 95% absorption in three broad bands in l=31/5mm l 37/2 mm and l=51 mm in the terahertz range. The structure absorber is composed of Graphene Array on top of the Gold separated by SiO2 thick dielectric layer. Finally, because of four fold symmetry in the structure, polarization independent absorption for this structure is achieved, where proposed structure can be employed in sensors and switching systems. KeywordsAbsorber, Chemical Potential, Graphene Tunable. 1 mdqm lhmhkh bdhhj nylw rf h Hm rd hdhm yhhhsnhkhrf hdwd ydZl lhhswt wywwrkhym hdd nhhshn shnrkhmh w dhhsh 1 lhmhkh yh bdhhj yHr rf h m hd sp z hb ytdhm lhydhbt shyqm yhhhsnhkhrf hdwdhHm hhb ztrhrt lhqtZm dhhhsh 2 syZGmwrtkhl jwm yh bdhj z yryhhsb jyr dZmzyn lqdH tmkhhD /4 l0 hkh ,dZthsh l0 yzkhrm jwm lw yh bdhhj ,lhH ny hb .thhhs yhhhshbht rwn rf rzb hdhm dZZkh ym hrf tmkhD ny shhkh yrb ydmarkh 3 rd hdhhhsh hdhych nbrkh yh t z y hhyl khht ,nfrg hhkhbhhhsh yrwbnz hhnl 4,5,6 yh drbrhkh ydhyz hhZymz rd D ow nl oa de d fr om o ps i.i r at 1 8: 45 03 30 o n W ed ne sd ay S ep te m be r 23 rd 2 02 0 w tsyb nymshsh w nry khynwtwf w khytp snrZkh nymhdzwd ,nry khynwtwf yrwZf w ysdZhm snrZkh hwshnd ymzrwkh nrht ,nry 15 16 nmhb 1398 746 tys rd hkh ts rbt` yrd ytrwSrd hlqm ny www.opsi.ir .dshb ysrtsd lbq w khynwmhslp rf rhswrf w ztrhrt yh snkhrf rd dwm drd [4,5,6] ytH w ,yrwn ,ykhynwrtkhl ,ykhynhkhm Swkh nfrg ytrrH hb w yyhymyhhhsh qyrzt lhZwyhhhs lhm` ykhyrtkhl lbq yyZt ths 4,7,8 yn khy nfrg ynhsr snhkhrf nyrbhZb w ,nwrtkhl ylhwch hhkh ,thhhs ymt zhn h slp ,hjytn rd .ths byjn tzlf z rtmkh ylykh na ym nfrg ym dnwt nwmhslp nwtyrlp yHHhs yh dZnmh r zlf khy byjn ynbythhshp snkhrf hkh ylH rd ,dZkh yrkh ylykh na rtmkh rhhhswrf w ztrhrt hdwdhHm rd w tzlfz thhs 4,9 rd hdthhs yrb nfrg hjytn rd rf dwm rd hZyzg ztrhrt hzb y bwlHm ts 10 yh bdhhj ywr rb h shhwwp bhlG rf khht y hdhm ydhnhb hjn hhtfhy bdhhj trdhn hhb thqyqHt w ,dhn yhh rf hdm dZch y ym lmsh r ysw dnb w hdnb dnwsh 11 bdhhj khhy ,hhlhqm ny rd yHr nfrg hhyra rb yZtbm hdhsh yhsrrb yrwwt trwhS hb w .ths yzhs hybhsh jytn rd dhHw hbyrqt byhj hhb ybhythhhsd hhhhs rd ybyhj dhnhb hdwdHm 3 t 10 ztrhrt ym nhhshn dhd w byj hlq h na nfrg thydhh yryyhp yyZt lhyld hhb ym dhnwt ryyGt hb ymrf rHhhhs dhZkhryyGt hdhhhsh hy'r bdhj nrqt lhyld hb rtkhhs hb shsH ryG shbHq ym w ths byj dnwt hhs z ysw hdwdHm khy rd r lmkh byrqt hdnb yywz ydwrf .drd hwn 2 h shwr w rtkhs lkhsh 1 hdsh wwl nfrg shymn )b( .rtkhs hng hs yh hyl shymn )fl( lkhhsh 1 rtkhhs dHw lwlhs lkhhshtm bdhj hyra z y z bwhZtm khht yZfrg hhyl wwl hhtfhy z y hhyl ywr rb l hkh ykhhD hyl khy b z SiO2 ths hdhsh dj r nhshn ym dhd rd lkhhsh 1 fl yd`b hhs rywhSt nhshn rtkhhs thhs hdhhsh hdd lkhhhsh 1 b dyd dHw khy ylb z p w ylwlhs yhsdZh yhrtmr rtkhhs ym nhshn r dhd tmkhhhD 2 SiO w b bytrt hb l tSiO2 tAu hdd nhhshn hdsh .ts nfrg kht tmhkhhhhD lhyld hb ym ,ymt nwZ` hb dnwt .dwhhsh htfrg ryn rd zn tyhn yb rHhhs bhhsZm nyrt nfrg ysyZGmwrtkhl Swkh ndrkh Skhshm yrb rtmrp khhsh nwdb ykhynwrtkhl dnb rtkhhs b yynhsr ths na ldhm yHHhhhs yyhnhhhhsr hb yZfrg hhqrw wr ny z ym dwhsh 12 h s b dnwt ym yZfrg hyra ,j ny rd hdt dwsh ldm yHHs yynsr z 11 1 s (o,mc,t) e mc ph2 i