125139430
Measurement of the Reactions $\bar{P} P \to \bar{\Lambda} \Lambda$, $\bar{p} p \to \bar{\Lambda} \Sigma^0$ and $\bar{P} P \to \bar{\Lambda}$ (Missing Mass) at 6-{GeV}
120421514
GAS SYSTEM FOR ALEPH TPC
Abstract Operation of the time projection chamber of the ALEPH experiment at LEP requires a high-purity argon/methane gas mixture supplied to the detector under stable conditions to ensure minimum signal attenuation throughout the 43 m 3 detector volume (max. 2.2 m drift length) and maintain near-constant electron drift velocity in the gas over extended periods of time. Design considerations for a gas system to fulfil these conditions are presented and details given of the construction, operational aspects and of the achieved performance.
120324718
Integration, commissioning and installation of monitored drift tube chambers for the ATLAS barrel muon spectrometer
The ATLAS experiment at the Large Hadron Collider (LHC) at CERN is currently being assembled to be ready to take data in 2007. Its muon spectrometer is designed to achieve a momentum resolution better than 10% at 1 TeV. In the barrel part, a toroidal air-core magnet is instrumented with three layers of Monitored Drift Tube (MDT) chambers for precision tracking. The Max-Planck-Institut fur Physik and the Ludwig-Maximilians-University in Munich have built 88 MDT chambers for the outermost barrel layer. We report on our experience with the tests of the MDT chambers, their integration with the Resistive Plate trigger chambers and the installation of the muon stations in the experiment. First results of their commissioning in the ATLAS detector will be presented.
126243744
Measurement of the reaction π−p→π+π−n on a transversely polarized target at 17.2 GeV
Preliminary results from a high statistics measurement (1 M events) of the reaction π−p→π+π−n on strong polarization effects which must be attributed to amplitudes corresponding to ’’A1’’ exchange.
108271361
Concepts for the readout of time projection chambers
While the use of CCD’s for the readout of TPC’s offers a reliable and ever more of the digitization concept. The problem of precision of currently available FADC’s is discussed together with two proposals for a solution.
122359864
Large-scale production of Monitored Drift Tube chambers for the ATLAS muon spectrometer
Abstract Precision drift tube chambers with a sense wire positioning accuracy of better than 20 μm are under construction for the ATLAS muon spectrometer. 70% of the 88 large chambers for the outermost layer of the central part of the spectrometer have been assembled. Measurements during chamber construction of the positions of the sense wires and of the sensors for the optical alignment monitoring system demonstrate that the requirements for the mechanical precision of the chambers are fulfilled.
110815032
Development of thin pixel sensors and a novel interconnection technology for the SLHC
Abstract We present an R&D activity aiming to develop a new detector concept in the framework of the ATLAS pixel detector upgrade in view of the Super-LHC. The new devices combine 75–150 μm thick pixels sensors with a vertical integration technology. A new production of thin pixel sensors on n- and p-type material is under way at the MPI Semiconductor Laboratory. These devices will be connected to the ATLAS read-out electronics with the new Solid–Liquid InterDiffusion technique as an alternative to the bump-bonding process. We also plan for the signals to be extracted from the back of the electronics wafer through Inter-Chip-Vias. The compatibility of the Solid–Liquid InterDiffusion process with the silicon sensor functionality has already been demonstrated by measurements on two wafers hosting diodes with an active thickness of 50 μm.
16346923
(Non-)BPS bound states and D-brane instantons
We study non-perturbative effects in four-dimensional = 1 supersymmetric orientifold compactifications due to D-brane instantons which are not invariant under the orientifold projection. We show that they can yield superpotential contributions via a multi-instanton process at threshold. Some constituents of this configuration form bound states away from the wall of marginal stability which can decay in other regions of moduli space. A microscopic analysis reveals how contributions to the superpotential are possible when new BPS states compensate for their decay. We study this concretely for D2-brane instantons along decaying special Lagrangians in Type IIA and for D5-branes instantons carrying holomorphic bundles in Type I theory.
122734759
Measurement and Optimization of the Emittance of a 300-ns 250-A 3.4-MeV Electron Beam
Author(s): Allison, R.W.; Beal, J.W.; Everett, W.L.; Guggemos, J.R.; Lamb, W.A.S.; Richter, R.M.; Sherwood, W.A.; Spoerlein, R.L.; Tanabe, J.; Wright, R.E.; Zajec, E.
110657741
Novel silicon n-in-p pixel sensors for the future ATLAS upgrades
Abstract In view of the LHC upgrade phases towards HL-LHC the ATLAS experiment plans to upgrade the inner detector with an all silicon system. The n-in-p silicon technology is a promising candidate for the pixel upgrade thanks to its radiation hardness and cost effectiveness that allow for enlarging the area instrumented with pixel detectors. We present the characterization and performance of novel n-in-p planar pixel sensors produced by CiS (Germany) connected by bump bonding to the ATLAS readout chip FE-I3. These results are obtained before and after irradiation up to a fluence of 10 16 1-MeV n eq cm − 2 , and prove the operability of this kind of sensors in the harsh radiation environment foreseen for the pixel system at HL-LHC. We also present an overview of the new pixel production, which is on-going at CiS for sensors compatible with the new ATLAS readout chip FE-I4.
118509992
Simulation and experimental study of plasma effects in planar silicon sensors
In silicon sensors high densities of electron-hole pairs result in a change of the current pulse shape and spatial distribution of the collected charge compared to the situation in presence of low charge carrier densities. This paper presents a detailed comparison of numerical simulations with time resolved current measurements on planar silicon sensors using 660 nm laser light to create different densities of electron hole pairs.