110963059
Use of Triple Modular Redundancy (TMR) technology in FPGAs for the reduction of faults due to radiation in the readout of the ATLAS Monitored Drift Tube (MDT) chambers
The Triple Modular Redundancy (TMR) technology allows protection of the functionality of FPGAs against single event upsets (SEUs). Each logic block is implemented three times with a 2-out-of-3 voter at the output. Thus, the correct logical value is available even if there is an upset bit in one location. We applied TMR to the configuration code of a Virtex-II-2000 FPGA, which serves as the on-chamber readout processor of the ATLAS monitored drift tubes (MDTs). We describe the code implementation, results of performance measurements and discuss several limitations of the method. Finally, we present a supplementary technology called ``scrubbing''. It permanently checks the configuration memory while the FPGA is operating, and corrects upset configuration bits when necessary.
120421514
GAS SYSTEM FOR ALEPH TPC
Abstract Operation of the time projection chamber of the ALEPH experiment at LEP requires a high-purity argon/methane gas mixture supplied to the detector under stable conditions to ensure minimum signal attenuation throughout the 43 m 3 detector volume (max. 2.2 m drift length) and maintain near-constant electron drift velocity in the gas over extended periods of time. Design considerations for a gas system to fulfil these conditions are presented and details given of the construction, operational aspects and of the achieved performance.
120324718
Integration, commissioning and installation of monitored drift tube chambers for the ATLAS barrel muon spectrometer
The ATLAS experiment at the Large Hadron Collider (LHC) at CERN is currently being assembled to be ready to take data in 2007. Its muon spectrometer is designed to achieve a momentum resolution better than 10% at 1 TeV. In the barrel part, a toroidal air-core magnet is instrumented with three layers of Monitored Drift Tube (MDT) chambers for precision tracking. The Max-Planck-Institut fur Physik and the Ludwig-Maximilians-University in Munich have built 88 MDT chambers for the outermost barrel layer. We report on our experience with the tests of the MDT chambers, their integration with the Resistive Plate trigger chambers and the installation of the muon stations in the experiment. First results of their commissioning in the ATLAS detector will be presented.
122359864
Large-scale production of Monitored Drift Tube chambers for the ATLAS muon spectrometer
Abstract Precision drift tube chambers with a sense wire positioning accuracy of better than 20 μm are under construction for the ATLAS muon spectrometer. 70% of the 88 large chambers for the outermost layer of the central part of the spectrometer have been assembled. Measurements during chamber construction of the positions of the sense wires and of the sensors for the optical alignment monitoring system demonstrate that the requirements for the mechanical precision of the chambers are fulfilled.
126243744
Measurement of the reaction π−p→π+π−n on a transversely polarized target at 17.2 GeV
Preliminary results from a high statistics measurement (1 M events) of the reaction π−p→π+π−n on strong polarization effects which must be attributed to amplitudes corresponding to ’’A1’’ exchange.
108271361
Concepts for the readout of time projection chambers
While the use of CCD’s for the readout of TPC’s offers a reliable and ever more of the digitization concept. The problem of precision of currently available FADC’s is discussed together with two proposals for a solution.
113702675
Characterization of Thin Pixel Sensor Modules Interconnected with SLID Technology Irradiated to a Fluence of 2$\cdot 10^{15}$\u2009n$_{\mathrm{eq}}$/cm$^2$
25787680
Spectroscopic performance of the DePMOS detector/amplifier device with respect to different filtering techniques and operating conditions
A DePMOS structure provides detection and amplification jointly, and it is free of interconnection stray capacitance. To fully exploit the intrinsic low noise of the device an electrical model has been developed. The most relevant parameters have been measured in order to choose an adequate readout electronics. DePMOS can operate in continuous mode, i.e., without applying any clear pulse during the signal processing, and can be read out by a time-continuous shaper amplifier. An unequalled noise of 2.2 electrons rms at room temperature has been measured. In this mode DePMOS can be used, for example, as the readout device for silicon drift detectors. Anyway , DePMOS was developed to be the basic element of an active pixel sensor suitable to cope with the requirements of the XEUS Wide Field Imager. In a matrix arrangement, each pixel must be read out by a time-variant filter. A multichannel integrated shaping amplifier, based on multicorrelated double sampling, has been designed. Spectroscopic resolution obtained filtering the pixel matrix with this readout chip is in agreement with measurements in continuous mode and matches the predictions of the model presented. It has also been experimentally proved that the clear procedure does not introduce additional noise contribution, even in the very low noise range achieved. This qualifies DePMOS as a "reset-noise-free" device
110657741
Novel silicon n-in-p pixel sensors for the future ATLAS upgrades
Abstract In view of the LHC upgrade phases towards HL-LHC the ATLAS experiment plans to upgrade the inner detector with an all silicon system. The n-in-p silicon technology is a promising candidate for the pixel upgrade thanks to its radiation hardness and cost effectiveness that allow for enlarging the area instrumented with pixel detectors. We present the characterization and performance of novel n-in-p planar pixel sensors produced by CiS (Germany) connected by bump bonding to the ATLAS readout chip FE-I3. These results are obtained before and after irradiation up to a fluence of 10 16 1-MeV n eq cm − 2 , and prove the operability of this kind of sensors in the harsh radiation environment foreseen for the pixel system at HL-LHC. We also present an overview of the new pixel production, which is on-going at CiS for sensors compatible with the new ATLAS readout chip FE-I4.
120803754
Study of a DEPJFET pixel matrix with continuous clear mechanism
Abstract A new kind of silicon pixel detector with integrated amplification has been built and tested. Each pixel consists of a p -channel JFET located on a fully depleted substrate. The pixel size can be customized by using a drift-chamber-like transport mechanism in each pixel. The homogeneity of the signal response of a small matrix was investigated with a laser diode. The measured rise time and gain of the device are analyzed with a simple small signal model.
19809846
Development of Fast High-Resolution Muon Drift-Tube Detectors for High Counting Rates
Abstract Pressurized drift-tube chambers are efficient detectors for high-precision tracking over large areas. The Monitored Drift-Tube (MDT) chambers of the muon spectrometer of the ATLAS detector at the Large Hadron Collider (LHC) reach a spatial resolution of 35 μ m and almost 100% tracking efficiency with 6 layers of 30 mm diameter drift tubes operated with an Ar:CO 2 (93:7) gas mixture at 3 bar and a gas gain of 20 000. The ATLAS MDT chambers are designed to cope with background counting rates due to neutrons and γ rays of up to about 300 kHz per tube which will be exceeded for LHC luminosities larger than the design value of 10 34  cm −1  s −1 . Decreasing the drift-tube diameter to 15 mm while keeping the other parameters, including the gas gain, unchanged reduces the maximum drift time from about 700 to 200 ns and the drift-tube occupancy by a factor of 7. New drift-tube chambers for the endcap regions of the ATLAS muon spectrometer have been designed. A prototype chamber consisting of 12 times 8 layers of 15 mm diameter drift tubes of 1 m length has been constructed with a sense wire positioning accuracy of 20 μ m . The 15 mm diameter drift-tubes have been tested with cosmic rays in the Gamma Irradiation Facility at CERN at γ counting rates of up to 1.85 MHz.