Improvement of light output in GaN-based power chip light-emitting diodes with a nano-rough surface by nanoimprint lithography
The enhancement of light extraction of gallium nitride (GaN)-based power chip (PC) light-emitting diodes (LEDs) with a p-GaN rough surface by nanoimprint lithography (NIL) is presented. At a driving current of 350 mA and a chip size of 1 mm × 1 mm, the light output power of the PC LEDs with a p-GaN rough surface (etching depth from 130 to 150 nm) showed an enhancement of 24% on wafer when compared with the same device without NIL. Current‐voltage results indicated an ohmic contact by the increase in the contact area of the nano-roughened surface at 200 mA. This paper offers a promising potential for enhancing the output powers of commercial LEDs. (Some figures in this article are in colour only in the electronic version)