Molecular Beam Epitaxy of Graded-Composition InGaN Nanowires
We report the growth of graded InGaN nanowires by plasma-assisted molecular beam epitaxy. Wire composition is linearly graded from InN to GaN along the length of each wire. The large lattice mismatch between GaN and InN (11%) introduces tensile strain in the graded region, which results in cracking of the wires. Growing with reverse grading (i.e., GaN to InN) results in crack-free nanowires. The composition is measured by energy-dispersive x-ray spectroscopy of individual nanowires performed in a scanning transmission electron microscope, and strain is measured by high-resolution x-ray diffraction.