Intermittent-contact capacitance spectroscopy - A new method for determining C(V) curves with sub-micron lateral resolution
This study introduces a novel method to measure C(V) characteristics of local MOS structures based on scanning probe microscopy (SPM) techniques. The new method operates in intermittent-contact (IC) mode and combines both the advantages of contact mode C(V) spectroscopy and intermittent-contact scanning capacitance microscopy. As a consequence, on the one hand dopant concentration and dopant type can be indicated simultaneously, on the other hand tip wear is reduced significantly.