LETTER TO THE EDITOR: In situ I-V study of swift (~100 MeV) O6+ ion-irradiated Pd/n-Si devices
An in situ I–V study of Pd/n-Si devices irradiated to swift (~100 MeV) O6+ ions for a fluence of 1011–1013 cm−2 has been carried out. The devices have been irradiated at room and LN2 temperatures. The irradiated devices have been hydrogenated in ex situ condition by molecular hydrogen. It has been observed that resistivity increases after the irradiation and there is a progressive increase with the increase of irradiation fluence. On hydrogenation, the devices irradiated at LN2 temperature show that the irradiation-induced increased resistivity decreases back to the pre-irradiated condition, whereas the devices irradiated at room temperature do not show any change. The results have been understood in the realm of irradiation-induced defects.