Recognition of D defects in silicon single crystals by preferential etching and effect on gate oxide integrity
A method for revealing point defects in silicon single crystals has been investigated. D or A defects could be revealed by a preferential etching technique using Secco's etchant. Wedge-shaped flow patterns and etch pits were recognised in the D and A regions, respectively. The flow patterns were so characteristic that the D region could be distinguished very easily.