Dielectric retardation and relaxation in Bi0.5La0.5MnO3 ceramic at 80 K
Low-temperature (80 K) measurements are made of the frequency dependences of the real and imaginary parts of the complex dielectric constant and complex electric modulus of bismuth lanthanum manganite Bi0.5La0.5MnO3 ceramic. The presence of two (low- and high-frequency) regions of dielectric retardation and relaxation is revealed. A considerable difference between the average rates of retardation and relaxation and the Debye value in the high frequency region is revealed and explained.