Slow state characterization by measurements of current-voltage characteristics of MOS capacitors
Slow current transients in metal-oxide-semiconductor (MOS) capacitors have been observed and related to slow states located in the oxide within tunneling distance of the silicon. This paper describes slow-state related current transients induced by voltage stepping as the basis of the recently developed technique for both energy-level and time-response characterization of the slow states. The voltage stepping measurements are compared to the standard linear voltage ramping technique.