Structural perfection and the distribution of impurities in magnetic semiconductor nanoheterosystems based on GaAs
A comprehensive study of the crystal structure and distribution of impurities in GaAs nanoheterosystems containing InGaAs quantum wells and delta ‹Mn›-doped layers is performed. High-resolution transmission electronmicroscopy, energy dispersive spectroscopy, and X-ray diffraction are used in particular. It is shown that our technique allows growing structures with embedded delta layers of magnetic impurities epitaxially.