Switchable topological domains in point contacts based on transition metal tellurides.
Resistive switching in voltage biased point contacts (PCs) based on series of transition metals tellurides (TMTs) such as MeTe2 (Me=Mo, W) and TaMeTe4 (Me= Ru, Rh, Ir) has been observed. The switching occurs between a low resistive metallic-type state and a high resistive semiconducting-type state by applying certain bias voltage (below 1V), while reverse switching takes place by applying voltage of opposite polarity. The switching effect consists in changing the PC resistance up to two orders of magnitude, which increases with decreasing temperature. The origin of the effect can be formation of domain in PC core by applying a bias voltage, when a strong electric field (about 10kV/cm) modifies crystal structure and/or control its polarization. Besides, impact of domain wall with topological interfacial states is also considered. Thus, we demonstrate the new functionality of studied TMTs arizing from switchable domains in submicron hetero-structures, that is promising, e. g., for non volatile RRAM engineering. 
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