Effects of device layout on the drain breakdown voltages in MuGFETs
Abstract The drain breakdown phenomena in n-channel MuGFETs have been investigated experimentally with different gate lengths, fin widths, fin numbers, and side surface orientations of fin body. In order to explain the dependence of drain breakdown voltage on physical parameters of MuGFETs, 3-D simulation has been also performed. The BV DS is decreased with the increase of fin width and fin numbers. It is clearly seen that the BV DS of devices with the 0° rotated fin body is larger than that of devices with the 45° rotated fin body. When the total fin width is constant, the observed results suggest that the optimum device layout considering BV DS in MuGFETs is the device structure with narrow fin and large fin numbers.