Characterization of the damage induced in boron-implanted and RTA annealed silicon by the capacitance-voltage transient technique
The electrically active profiles and the induced defects in boron-implanted silicon under different implantation conditions were measured. The implantation profiles were derived from conventional capacitance-voltage measurements. Deep-level defects induced by the technological process have been characterized. Deep-level transient spectroscopy (DLTS) seems not to be sufficient to study the variations of the deep-level properties along the space-charge region of the junctions. In order to achieve a more complete deep-level characterization we have set up a new technique, named the capacitance-voltage transient technique (CVTT), which allows us to determine the spatial variation of the concentration and of the emission rates of the deep levels. The results obtained from the application of these techniques to the study of the influences of the different implantation parameters are presented.