High-performance and low-voltage pentacene thin film transistors fabricated on the flexible substrate
We report on the fabrication of low operating voltage pentacene thin film transistors with PVP (poly-4-vinylphenol)/CeO2–SiO2/PVP triple dielectric layers on a flexible substrate. Our triple dielectric layers exhibited a markedly reduced leakage current characteristic and a relatively high capacitance. The field effect mobility, on/off current ratio and subthreshold slope obtained from pentacene thin film transistors were 0.67 cm2 V s−1, 105 and 0.36 V dec−1, respectively. It was demonstrated that the spin-coating polymer layer can be used to planarize the surface irregularities and to improve the dielectric and device properties.