A channelling and conversion electron Mossbauer spectroscopy study of annealing behaviour of tin implanted silicon
The authors investigate the solid phase epitaxial (SPE) regrowth and the substitutional solid solubility of silicon implanted with 119Sn to a dose of 1 * 1016 cm-2 at 250 keV, after furnace annealing, rapid thermal annealing and two-step annealing. It is shown that by means of two-step annealing one can reach a complete epitaxial regrowth of the amorphised layer, as well as a complete substitutional solid solution of the 119Sn impurity, to a concentration two orders of magnitude higher than the solid solubility limit, without any observable redistribution of the implanted concentration profile.