The two-dimensional model for the base surface current in integrated bipolar transistors and its applications
Abstract The recombination of minority carriers at the Si-SiO2 interface has a great effect on bipolar devices. In this paper, the surface electrical properties of capacitors (MOS or MNOS) and gate-controlled npn transistors which are passivated by SiO2 and Si02Si3N4 films, respectively, are studied, and it is found that the Si02Si3N4 dual dielectrical films can reduce the surface current in the base region. An improved theoretical model of the base surface current versus surface potential or gate voltage is set up on the basis of the work of Hillen and Holsbrink [Solid St. Electron. 26, 453–463 (1983)] for integrated bipolar transistors. The model successfully explains the experimental results of the variation of the base surface current of the gate-controlled integrated bipolar npn transistors with the gate voltage and provides a more accurate model for the computer simulation and the reliability analysis of the devices.