Fabrication and electrical properties of FTO Nano-particles/Nanocrystal porous silicon heterojunction under gamma radiation effect
In this paper porous silicon layer was papered by photo electrochemical etching PECE with laser assisted and the FTO thin filmdeposited on porous silicon layer substrates by spray pyrolysis technique. To study the effect of gamma radiation on electrical and photocurrent characteristicsÂÂ of fluoride tin oxides /porous silicon /mono crystalline silicon n-type heterojunction was exposed to 60 Co-ray sources at roomtemperature. The FTO/PS/n-Si/Al heterojunction was study using I ÂÂ V and CÂÂ2 ÂÂ V measurements, with focus on the influence of the duration gamma radiation on the electrical properties.