Indium doping of HgCdTe grown by metalorganic chemical vapor deposition-direct alloy growth using triisopropylindium and diisopropyltellurium triisopropylindium adduct
A new indium source, triisopropylindium, was used to dope HgCdTe layers grown by metalorganic chemical vapor deposition n-type with carrier concentrations, nH, in the range between low 1015 and low 1017 cm−3 at 77K. The reproducibility of carrier concentration was found to be excellent for nH<3×1015 cm−3. High electron mobilities and minority carrier lifetime comparable to published values indicate that indium doping produces high quality n-type HgCdTe material. State-of the-art photodiodes were obtained by growing a p-type HgCdTe layer by liquid phase epitaxy on an indium doped layer. In addition, and adduct compound formed between diisopropyltellurium (DIPTe) and triisopropylindium (TIPIn): DIPTe·InTIP, was also found to be a viable n-type dopant for HgCdTe especially at concentrations in the low 1015 cm−3 or less.