Photomodulation study of partially strained InxGa1-xAs layers
Photomodulation techniques have been used to study the fundamental transitions of partially strained InxGa1-xAs/GaAs (x=0.07 and 0.16) epilayers. The strain-induced splitting of the valence band was observed. The identification of the split valence bands was confirmed using linearly polarized photoreflectance under a total internal reflection mode. The temperature dependence of two bandgap energies E01 (heavy-hole band) and E02 (light-hole band) was studied over a temperature range from 15 to 300 K. The parameters that describe the temperature dependence of E01 and E02 as well as the broadening function are evaluated.