Power p-i-n diodes for snubberless application: H+ irradiation for soft and reliable reverse recovery
Abstract In this work we describe a coupled experimental–numerical approach for the design of power p–i–n diodes for snubberless applications, fabricated using proton irradiation for axial lifetime control. With an efficient procedure, based on simple measurements performed on a few samples, different proton irradiation profiles were numerically evaluated, in order to extract indications on the optimum trade-off among switching speed, recovery softness, overvoltage and spurious oscillation damping.