Room-temperature GaInAsSb/GaSb strained quantum-well laser diodes
Diode lasers operating at room temperature with an emission wavelength of have been fabricated from compressively strained multiple-quantum-well structures grown by molecular beam epitaxy. Ridge waveguide lasers long exhibited an RT current threshold of 500 mA, optical power efficiency of /facet and a differential quantum efficiency of 14.5%. A pulsed threshold current density less than with a characteristic temperature have been achieved for broad mesa devices. The laser structure, which has a type-II band alignment at the well-barrier interface, showed an internal efficiency , controlled by the electron-hole wavefunction overlap at the interface.