Simulation and experimental comparison of GGNMOS and LVTSCR protection cells under ElectroStatic Discharges
To assess the capabilities of the device simulation tool in the field of ElectroStatic Discharges (ESD), two protection structures were studied: a Grounded Gate NMOS transistor (GGNMOS) and a Low Voltage Threshold Silicon Controlled Rectifier (LVTSCR). Both compounds were tested with the Transmission Line Pulse test method and simulated with the software Dessis-ISE. Hence, checking the behaviour of each device in terms of ESD has been possible. (C) 2001 Elsevier Science Ltd. All rights reserved.