Photo-CVD process for ultra thin SiO2 films
Abstract In this paper we first report the use of very low deposition rate photo-induced chemical vapor deposition process, (below 0.05 nm/min). This photo-CVD process is adequate to grow very thin and ultra thin layers of SiO 2 . Details on the design of the reaction chamber, reactive gases and process parameters to obtain the desired deposition regime are presented. Dependence of deposition rate on pressure in the chamber and gas flow ratio is discussed. Deposited layers were characterized using I – V and C – V techniques.