CdSxSe1–x/CdS heterostructures in longitudinally electron-beam-pumped lasers
An investigation was made of the characteristics of semiconductor lasers utilizing CdSxSe1–x/CdS heterostructures (x = 0, 0.9) pumped longitudinally by an electron beam. By using heterostructures with a passive region transparent to the radiation, it was possible to increase the total length of the resonator and to reduce the divergence of the radiation without substantially lowering the power and thereby increasing (more than threefold) the brightness of a laser operated under cryogenic cooling conditions. A CdSe/CdS heterostructure was used in a scanning laser with a power of 0.5 W at room temperature where no degradation due to thermoelastic stresses was observed, in contrast to lasers utilizing single crystals at this power level.