Si－Yb quantum cascade and Si－Yb－Si PIN hybrid light-emitting diode
Si－Yb quantum cascade and Si－Yb－Si PIN hybrid light-emitting diode is designed for optical communication, which is easy to be integrated on silicon chip. Photoluminescence (PL) and electroluminescence (EL) dynamics on nanosilicon deposited by Yb is investigated. Sharper PL peaks near 700 nm are observed on silicon quantum dots (Si QDs) coated by Yb. The enhanced EL peaks in the wavelength region from 1250 nm to 1650 nm are measured on silicon film deposited by Yb. It is discovered that the EL intensity enhances and the peaks number increases with increasing number of Si－Yb layers. The emission wavelength could be manipulated into the window of optical communication by Si－Yb bonding on nanosilicon.