Simulation of the influence of TiAl3 layers on the thermal-electrical and mechanical behaviour of Al metallizations
Abstract Al/Ti/TiN metallizations form TiAl 3 layers during the annealing process. The influence of TiAl 3 layers on the thermal–electrical–mechanical behaviour is investigated here. For high temperature automotive and industrial applications in a 0.35 μm CMOS process the test structures have to be approved. The thermal–electrical–mechanical behaviour of the test structures is calculated by simulations. Two aluminium deposition temperatures of 250 °C and 470 °C were considered. The Ti-based layer thicknesses forming the TiAl 3 as well as the whole metallization thickness were investigated. The simulations show a good correlation with measurements.