Nonlinear current-voltage characteristics due to quantum tunneling of phase slips in superconducting Nb nanowire networks
We report on the transport properties of an array of N∼30 interconnected Nb nanowires, grown by sputtering on robust porous Si substrates. The analyzed system exhibits a broad resistive transition in zero magnetic field, H, and highly nonlinear V(I) characteristics as a function of H, which can be both consistently described by quantum tunneling of phase slips.