Benefits of cryo-implantation for 28 nm NMOS advanced junction formation
In this paper, the integration benefits from cryogenic NMOS source drain extension implants on a state-of-the-art 28 nm logic flow are demonstrated and discussed. It is shown that device benefits, such as improved short channel effect, drain-induced barrier lowering and static random access memory yield improvement, can be achieved via damage engineering and enhanced dopant halo activation.