Low temperature InP layer transfer onto Si by helium implantation and direct wafer bonding
Helium implantation-induced layer splitting of InP in combination with direct wafer bonding was utilized to achieve low temperature layer transfer of InP onto Si(1 0 0) substrates. InP(1 0 0) wafers with 4 inch diameter were implanted by 100 keV helium ions with a dose of 5 × 10 16 cm −2 . Then the as-implanted wafers were coated with a spin-on glass (SOG) oxide having a thickness of 150 nm. The SOG coated InP wafers were subsequently