Resistive switching effect in thin-film heterojunctions based on electron-doped Nd2 − xCexCuO4 − y superconductor
Thin-film heterojunctions Nd2 − xCexCuO4 − y/Ag were obtained. The bipolar effect of resistive switching in these heterostructures was detected and investigated. X-ray diffraction data indicate the presence of a second phase in thin films; along with the basic phase Nd2 − xCexCuO4 − y, it affects the behavior of the interface of investigated heterojunctions and leads to an alteration of the type of conductivity. The threshold frequency of alternating voltage at which the resistive switching effect is observed in heterojunctions was detected.