Spatial variations of interface properties in palladium silicide/silicon structures
The spectral distributions of the opto-electric yields of Pd2Si/Si metal-semiconductor structures with large areas on p-type (100)-oriented silicon have been investigated. Considerable differences were found between different subareas of the silicide contact. The energy barrier heights in the inner part of a circular area with a diameter of 7 mm were found to deviate from the energy barrier closer to the periphery by about 0.1 eV. Furthermore, the spectral forms of the photo-yield curves for the two regions were completely different. The inner areas exhibited a maximum in their yield spectra while a traditional behaviour with a steadily growing spectral function was found when the entire area was illuminated.