Generation and annealing behaviour of MeV proton and /sup 252/Cf irradiation induced deep levels in silicon diodes
The generation and annihilation of deep levels in diodes fabricated on nand p-type floating zone and Czochralski silicon substrates is discussed as a function of the substrate parameters and the irradiation and thermal annealing conditions. Both low fluence irradiations with MeV protons and with the fission products of a /sup 252/Cf source are investigated. The presence of deep levels with densities in the range of 4/spl times/10/sup 11/ to 2/spl times/10/sup 12/ cm/sup -3/, is correlated with increase of the diode leakage current. >