Photoconductivity of single-crystal 3C-SiC films excited by ultrashort light pulses
Fast photoconductivity relaxation and photoconductivity against light excitation intensity in single-crystal 3C-SiC films grown on n-Si substrates have been investigated. The measurements of as-grown and polished samples in a wide range of excitation levels showed the dominant influence of surface recombination and its concurrence with carrier diffusion toward the surface on the relaxation of non-equilibrium carrier concentration. The evaluated non-equilibrium carrier mobility at concentrations of 1017-1020 cm-3 changes in a range from 630 cm2 V-1 s-1 to 6 cm2 V-1 s-1.