ECR (electron cyclotron resonance) plasma for thin film technology
ECR plasma has been used widely and industrially f or CVD and etching in semiconductor processes. In this paper, the progress which has been made in ECR plasma equipments and processing has been reviewed. ECR plasma source h as some excellent features such as low pressure plasma generation, the capability of ion energy control and high ionization effi- ciency. The magnetic plasma control and the high power microwave plasma generation t echniques developed in our laboratories have improved uniformi- ty and throughput in comparison with those in RF plasma. Satisfactory performances are obtained in various processes, which are interlayer plan- arization, a-Si CVD, tungsten CVD, SiOe and aluminum etchings.