A high performance charge plasma based lateral bipolar transistor on selective buried oxide
In this paper, we present a new structure of lateral bipolar transistor on selective buried oxide. The device does not use highly doped regions; however, it employs the concept of creating n and p type charge plasma in undoped silicon by using metal electrodes of different work functions. The proposed device is named as the selective buried oxide based bipolar charge plasma transistor (SELBOX-BCPT). An extensive 2D simulation study has revealed that the proposed SELBOX-BCPT device not only possesses all the advantages of the conventional BCPT device, but it also addresses various severe problems of the BCPT device. A significant improvement in major issues of poor cutoff frequency (fT), low breakdown voltage and thermal efficiency has been achieved. It has been observed that the fT has increased by ∼94.6%, the breakdown voltage by 23.47% and the device is much cooler than the conventional BCPT device. A large current gain is obtained in the proposed device and is on a par with the conventional BCPT device. Further, by using mixed-mode simulation feature of the Atlas simulator, inverting amplifiers based on SELBOX-BCPT and the conventional BCPT have been realized. A significant improvement of 15% in switching-on transient time and 25.8% in switching-off transient time has been achieved in the proposed device in comparison to the conventional BCPT device.