Optical and electrical characterization of low temperature grown GaInAs
GaInAs grown at low temperature by molecular beam epitaxy has been studied using Hall effect and photoluminescence spectroscopy. The variations of the electrical and photoluminescence properties are described versus growth temperature and subsequent heat treatments. In contrast to GaAs, these materials exhibit a strong luminescence near band gap and are not semi-insulating. Recombination mechanisms are proposed from the dependence on the temperature and excitation density of the observed emissions, and reasons for their electrical behaviour are discussed.