Anomalous Raman features of silicon nanowires under high pressure
The potential of silicon nanowires (SiNWs), (diameter = 5 GPa establishes a highly anisotropic and mode-dependent pressure response of these SiNWs. Properties of the novel structures are superior compared to other nano-structured silicon and bulk-Si in terms of increased linear modulus, more localized phonon confinement and less anharmonicity.