リッジ基板上の一回の選択MOCVDによるInGaAs/AlGaAs 量子細線DFBレーザー
A quasi-buried hetero-structure (BH) quantum wire (QWR) distributed feedback (DFB) laser was realized by one time selective metalorganic chemical vapor deposition (MOCVD) on a ridge substrate with a sub-micron grating. One time selective MOCVD growth forms ridge waveguide with BH structure and a QWR array for gain guided DFB LD without additional etching or re-growth process. The threshold current is 15mA, and the threshold current density is 850A/cm2. A stable single longitudinal mode was preserved until 3 Ith, after which another mode emerged at higher drive current at 813.6nm. This suggests a complex coupled DFB mode operation. Elimination of the re-growth step also enlarges the selection of material for extended wavelength and operational temperature.