Current transport mechanism of polysilicon-emitter transistor
Abstract The minority carrier transport mechanism in the arsenic-doped polysilicon-emitter transistor without an interfacial polysilicon-silicon oxide layer has been analysed. It has been shown that for arsenic peak impurity segregation at the polysilicon-monosilicon interface in the range of 10 19 −5 × 10 19 cm −3 , the carrier transport in the emitter is dominated by the thermionic emission mechanism. Some earlier work on temperature dependence of the current gain has been analysed for the polysilicon-emitter transistor and the conventional transistor, and inconsistencies in the results are explained using the thermionic emission-diffusion carrier transport model.