Characterization of SiO 2 Films Deposited by VUV-CVD Using Organic Siloxane Gases
Recently, much attention has been paid to novel photochemical vapor deposition using vacuum ultraviolet excimer lamps (VUV-CVD), because thin films can be deposited at room temperature. We show some characterization of films and discuss about the reaction mechanism using organic siloxane gases in VUV-CVD. VUV photons dissociate organic gases into radical reactants of Si-O and impurities such as C-H and O-H in the gas phase. The reactants finally condense on the surface into films included SiO2 and impurities. The reaction is different by adding O2. It is caused by the behaviors of ozone and activated oxygen that VUV photons dissociate O2 and are generated. The deposition efficiency is improved both by the low substrate temperature and the higher light-intensity of an excimer lamp. The film deposition at room temperature in VUV-CVD that either thermal or plasma induced damages are completely avoided must become a novel technique in thin films preparations.