Growth and characterization of AlxGa1−xAs Bragg reflectors by LP-MOCVD
Using a moderate-sized LP-MOCVD production reactor, we have demonstrated the growth of Bragg reflector structures that reflect nearly 100% of the light at the design wave-length of 850 nm. The designs studied consist of alternating layers of Al0.10Ga0.90As and Al0.85Gao0.15As, with up to 30 periods. Characterization data show the structures to be highly reproducible and uniform, with good agreement between data obtained by double-crystal x-ray rocking curve analysis, cross-sectional transmission electron microscopy, and optical-reflectance spectroscopy. GaAs solar cells utilizing Bragg reflectors have been fabricated and characterized.