Indium- and tungsten-doped ZnGa2O4 phosphor
This paper describes the optical characteristics of indium- and tungsten-doped ZnGa2O4 phosphor for field emission display (FED). The solid-state reaction is used to synthesize the phosphor powder, and the phosphor film is prepared by electrophoresis. Indium doping enhances the luminescence of ZnGa2O4 phosphor; nevertheless, the emission of phosphor doped by tungsten shifts to the short wavelength region. From the measurement of the cathodoluminescence (CL), it reveals that the luminescence of the phosphor film is improved when it is annealed in an O2/Ar atmosphere. A luminance of 2,080 cd/m2 is obtained as the phosphor film is excited at an electron voltage of 5 kV and an anode current of 30 µA.