A simple, analytical model for hot-carrier induced degradation in n-channel MOSFETs
Abstract As the experiments described in this paper show, the transconduction degradation of n-channel MOSFET's induced by hot-carrier stress can be traced back to damages in the gate oxide inside the drain-gate overlap region. The introduction of a simple, analytical expression for this overlap region into a transistor model shows how fixed oxide charge and increased surface state density influence the transistor characteristics. The experimental verification of this considerations exhibits a good agreement between model and measured data.