Comparative studies of p-type InP layers formed by Zn3As2 and Zn3P2 diffusion
The Zn3As2 and Zn3P2 were used as Zn-diffusion sources to form a p-region in undoped-InP wafers. The p-type InP formed by Zn diffusion from a Zn3P2 source has higher transmittance over the testing-spectrum range 1,000–1,700 nm versus Zn diffusion from a Zn3As2 source. In the case of a p-type region formed from a Zn3As2 source, x-ray photoelectron spectroscopy (XPS) showed As atoms were reduced from the oxide state and formed an InAs composition, which introduces more absorption loss.