Comprehensive failure analysis of leakage faults in bipolar transistors
The origin of a leakage current in several failed NPN bipolar transistors has been identified by complementary advanced failure analysis techniques. After precise localization of the failing area by photon emission microscopy and optical beam induced resistance change investigations, a focus ion beam technique was used to prepare thin lamellae adequate for transmission electron microscopy (TEM) study. Characterization of the related microstructure was performed by TEM and energy-dispersive spectrometry nanobeam analyses. It was identified as Ti-W containing trickle-like residue located at the surface of the spacers. Current?voltage measurements could be related to such structure defects and the involved conduction mechanism was identified as the Poole?Frenkel effect.