Structure and Optical Properties of Epitaxial Indium Oxide Films Deposited on Y-Stabilized ZrO2 (111) by MOCVD
Indium oxide (In2O3) films have been deposited on Y-stabilized ZrO2 (YSZ) (111) substrates, at temperatures from 500°C to 700°C, by metal–organic chemical vapor deposition. Structural analysis indicated that all the films were cubic bixbyite In2O3 with an out-of-plane relationship of In2O3 (222)||YSZ (111). Crystal quality was best for the film prepared at 600°C. The microstructure of this film was investigated by high-resolution transmission electron microscopy. A theoretical model is proposed for the mechanism of growth, and the in-plane epitaxial relationship of the single crystalline In2O3 film on the YSZ (111) substrate was shown to be In2O3$$ [01\overline{1} ] $$[011¯]||YSZ $$ [01\overline{1} ] $$[011¯]. Average transmittance of the samples in the visible region was >78%.