Observation of electron and hole velocity overshoots in an Al0.3Ga0.7As-based p?i?n semiconductor nanostructure
We report experimental results on simultaneous measurement of electron as well as hole transient transport in an Al0.3Ga0.7As-based p–i–n semiconductor nanostructure by using picosecond/subpicosecond Raman spectroscopy. Electron and hole velocity overshoots are directly observed. These experimental results are discussed and explained.