ALD grown zinc oxide with controllable electrical properties
The paper presents results for zinc oxide films grown at low-temperature regime by atomic layer deposition (ALD). We discuss electrical properties of such films and show that low-temperature deposition results in oxygen-rich ZnO layers in which free carrier concentration is very low. For the optimized ALD process it can reach the level of 1015 cm−3, while the mobility of electrons is between 20 and 50 cm2 V−1 s−1. Electrical parameters of ZnO films deposited by ALD at low-temperature regime are appropriate for constructing the ZnO-based p–n and Schottky junctions. We demonstrate that such junctions are characterized by a rectification ratio high enough to fulfill requirements of 3D memories and are deposited at temperature 100 °C which makes them appropriate for deposition on organic substrates.