LETTER TO THE EDITOR: Annealing of Schottky contacts deposited on dry etched AlGaN/GaN
The influence of annealing on properties of Pt Schottky contacts deposited on the electron cyclotron resonance plasma etched surface of an AlGaN/GaN heterostructure has been investigated. It is found that rapid thermal annealing (450 °C and 40 s in nitrogen gas), performed after metal deposition, allows for the preparation of Schottky contacts with similar or better properties than those obtained on a non-etched surface. This procedure is suitable for the realization of recessed high-quality Schottky contacts of AlGaN/GaN HEMTs.