Obliquely deposited CdTe:In films with anomalous photovoltaic properties
A technology of doping of photovoltaically anomalous polycrystalline CdTe films with indium is developed, which makes it possible to increase the photovoltage by an order of magnitude and the short-circuit current by more than two orders of magnitude. This effect, which was observed for the first time in CdTe:In films, is explained by the asymmetric thermofield migration of In+i ions and cadmium vacancies VCd−j in the crystal field of grain boundaries during the heat treatment