Characteristics of MIS capacitors based on multilayer TiO2–Ta2O5 structures
Abstract We report electrical characteristics of multilayer TiO2–T2O5 based MIS structures obtained by simple electron beam evaporation and annealed in an O2 environment. We describe parameter dependence on annealing conditions and demonstrate an equivalent SiO2 thickness of 3 nm with a leakage current density of 10−7 A/cm2 at an electric field of 106 V/cm.