XAFS study on gallium ions implanted in silicon carbide.
Local structure of gallium ions implanted in silicon carbide has been investigated using extended X-ray absorption fine structure on the Ga K-edge. The crystallinity of the implantation layer is compared in the samples prepared under several different conditions of implantation temperature and post-implantation annealing. It is found that significant damage is induced by the implantation at room temperature, but the crystallinity recovers by the subsequent annealing at high temperature at 1600 degrees C. On the other hand, the best crystallinity is obtained by the implantation at high temperature of 500 degrees C. but the annealing results in degrading the crystallinity. This indicates an influence of the post-implantation annealing at high temperature on the crystallinity in atomic level, which relates to the secondary defects in lattice observed by electron microscope.