Electrical properties of an a-Si/Si(p)/Si(n) heterojunction device
The electrical I-U characteristics of the three-terminal device a-Si/Si(p)/Si(n) have been investigated. The device shows both transistor and switching behaviour depending on the magnitude of the base current. The influence of the base current on the holding and switching voltages has been studied. A model describing this behaviour of the device has been suggested. It is based on the existence of a narrow region adjacent to the a-Si/Si(p) junction, characterized by an extremely high recombination rate of the injected carriers.