Untersuchung der Cerenkovstrahlung mit 50 keV-Elektronen in dünnen Siliziumschichten
For wavelengths near 5000 Å the index of light refraction in silicon is so large, that a considerable amount of Cerenkov radiation is generated by 50 keV electrons. We discuss experimental radiation pattern of transition radiation including Cerenkov radiation emitted from 50 keV electrons traversing thin silicon foils of 2000 Å thickness at different angles of electron incidence. There is good agreement of the experimental results with theory.