Magnetron sputter deposition of A-15 and bcc crystal structure tungsten thin films
The effect of processing parameters on the crystal structure and electrical resistivity of magnetron sputter deposited tungsten thin films was investigated. Formation of body centered cubic (bcc) W was favored when the concentration of impurity oxygen atoms in the films was <5 at.% while the formation of A-15 W was favored between 6 and 10 at.% oxygen. A transition from A-15 W films to bcc W films occurred as the oxygen was removed from the deposition chamber by presputtering the target for extended periods of time. The binding energies of the W atoms in A-15 and bcc W films are similar, as is the binding energy of the O atoms in the two different crystal structures, indicating that the oxygen is not present as a tungsten oxide compound. The resistivity of A-15 W films is always higher than the resistivity of bcc W films due to the increased oxygen concentration and small grain size of the A-15 films. However, the sputter deposition pressure is found to have a greater effect on resistivity. This is attributed to the formation of cracks in the film.