Excitonic complexes correlation energies in individual biased InAs/GaAs and InGaN/GaN quantum dots
In this work we report on the calculation of the correlation energies of excitonic complexes in the III–V nanostructures InAs/GaAs and InxGa1−xN/GaN quantum dots. We examine how the electric field and the basis radius rc of the quantum dots affect these energies. The results presented in this work are in sound agreement with recent experimental observations.