Electron beam lithography with a Gaussian current distribution for nanolithography
The parameters of a system of electron beam lithography with a Gaussian current density distribution are studied. The dependence of resolution on magnification and the ratio of anode potentials are analyzed. A model of a three-electrode electron gun with a ZrO/W cathode is used. Stochastic aberration is taken into account. It is shown that a resolution of 10 nm is obtainable even if an electron gun with the simplest geometry is used.