Study of non-contact nano-probing technique using FIB
As the LSI feature is miniaturized, the evaluation of the fault transistor characteristic within an integrated circuit becomes a critical factor in the failure analysis. In this paper, the possibility of the probing technique using the charged-particle beam as a probe which had a smaller diameter than that of mechanical probe used in a conventional technique was examined. Focused ion beam (FIB) was used as a probing beam. The measurements of the transistor characteristics were tried by injecting the charge of FIB into the drain electrode of the transistor. And it was demonstrated that the application of the new probing technique to the measurement of the transistor characteristic was very useful.