G-factors of hole bound states in spherically symmetric potentials in cubic semiconductors
Abstract
Holes in cubic semiconductors have effective spin 3/2 and very strong spin orbit
interaction. Due to these factors properties of hole bound states are highly unusual. We
consider a single hole bound by a spherically symmetric potential, this can be an acceptor
or a spherically symmetric quantum dot. Linear response to an external magnetic field is
characterized by the bound state Lande g-factor. We calculate analytically g-factors of all bound
states.
