Modeling of the effect of low intensity ionizing radiation on MOS elements of VLSI circuits
A method for predicting the tolerance of MOS VLSI circuits to low intensity cosmic rays is reported. The method is based on the analysis of the test MOS structure response to high-dose-rate radiation and on the solution of the system of equations describing the radiation-charge accumulation in the gate oxide of the poly-Si-SiO2(P)-Si structure and its relaxation by tunneling and thermal emission.