Preparation of ferroelectric PLZT thin films
Transparent ferroelectric PLZT thin films were prepared on fused-quartz substrates by rf sputtering using a powder target of pulverized ceramic PLZT. The substrate temperature was kept above 550° C to obtain the film. Excess PbO in the target may act as a sort of flux for crystal growth. The dielectric constant of the film was 500 at room temperature and the film showed a ferroelectric hysteresis curve. By an appropriate annealing, the transparency of the film became improved. The electrooptic effects of the film was measured for the first time. The light intensity reflected from the film was changed strongly by application of the electric field. With light incident at 70° , an intensity change of 33% was obtained at the electric field of 12.5kV/cm.