The use of multiple oxygen implants for fabrication of bipolar silicon-on-insulator integrated circuits
A description is given of the radiation improvements obtained by fabricating bipolar integrated circuits on oxygen-implanted silicon-on-insulator substrates that were manufactured with multiple (low-dose) implants. Bipolar 74ALS00 gates fabricated on these substrates showed an improvement in total dose and dose-rate radiation response over identical circuits fabricated in bulk silicon. Defects in SIMOX material were reduced by over four orders of magnitude. The results demonstrate that bipolar devices, fabricated on multiple-implant SIMOX substrates, can compete with conventional dielectric isolation for many radiation-hardened system applications. >