Si-implantation into GaAs grown on Si
Abstract200 keV Si implantations were performed in the dose range of 5 × 1012 − 1 × 1014 cm−2 in GaAs grown on Si. For comparison implants were also performed in GaAs layers grown on GaAs substrates. Implanted layers were annealed by both furnace and halogen lamp rapid thermal anneals. Significantly lower donor activations were observed in GaAs layers grown on Si substrates than in the layers grown on GaAs substrates. Extremely low dopant activations were obtained for Be implants in GaAs grown on Si. Photoluminescence and photoreflectance measurements were also performed on the implanted material.