DLTS investigation of deep levels in bulk GaAs under uniaxial stress
This work reports uniaxial stress DLTS measurements on the EL2, EL3 and EL6 levels in n-type bulk GaAs. The stress was parallel to the (111) axis. The defect state EL6 seems unaffected by stresses up to 1.5 kbar. EL2 exhibits a pressure coefficient of 1.3 meV kbar-1. EL3 shows a low-stress (2.8 meV kbar-1) and a high-stress (4.6 meV kbar-1) pressure coefficient. These results are discussed in connection with previously reported data published in the literature. An anomalous electric field dependence of the emission rate of the EL3 level is also reported.