The electrical properties of Ga/nGaAs(110) interfaces
The electrical properties of moderately doped Ga/nGaAs(110) Schottky diodes, fabricated on both the clean cleaved and on the cleaved and air exposed GaAs(110) surface, have been studied. The current-voltage characteristics of both interfaces have an extremely large electron-hole recombination current. It is argued that this is produced by a disordered GaAs interfacial layer. Additionally, the capacitance-voltage characteristics of Ga/nGaAs(110) diodes, fabricated on the clean cleaved surface, are non-ideal and they preclude conventional analysis. The aging behaviour of these interfaces has also been studied in detail. The electrical characteristics and the changes in the electrical characteristics with time are discussed in terms of the available microscopic theories of Schottky barrier formation.