Features of phase transformations in a NiV–Pt–Si system during stationary stepped annealing
Electron diffraction methods in reflection geometry are used to investigate the distinctive features of phase transformations that occur in a NiV–Pt–Si system during stationary stepped annealing. A platinum film 0.015–0.02 µm thick and then a vanadium-alloyed nickel film 0.08 µm thick are magnetron-sputtered on the surface of a silicon wafer of KEF-0.5 grade with (111) orientation. Annealing is performed in a nitrogen atmosphere. It is shown that depending on the degree of homogenization of the mutual Ni–Pt solid solution and the interaction at the Pt–Si interface at the first step of annealing, which lasts for long periods of time at temperatures of 240 or 350°C, subsequent high-temperature annealing at 550°C for 30 min leads to the formation of Ni1–xPtxSi- or Pt1–xNixSi silicides with NiSi- or PtSi-type crystal lattices.