Time and temperature dependence on rapid thermal annealing of molecular beam epitaxy grown Ga0.8In0.2N0.01As0.99 quantum wells analyzed using photoluminescence
GaInNAs has received a great deal of attention among the scientific community, owing to its ability to be grown pseudomorphically on GaAs substrates and, thus, to extend the possibility of using GaAs based materials for technologically important wavelengths such as 1.3 µm. Annealing was found to be a very useful tool in improving the optical characteristics of as-grown GaInNAs films. This work presents a systematic statistical analysis of two annealing parameters, time and temperature, for Ga0.8In0.2N0.01As0.99 quantum wells. Annealing, in general, has resulted in decreasing the emission wavelength by at most 0.08 µm, narrowing the peaks by at most ∼25 meV and increasing the intensity by at most 90 times. However, from the statistical analysis, it is observed that the temperature is the dominant factor among time and temperature in recovering the optical properties.