Preparation and Characterization of Epitaxial Conductive 
Nb-SrTiO3 Thin Films on Si Substrates
Epitaxial Nb-doped SrTiO3 (001) thin films have been integrated on Si(001) single-crystal substrates with a TiN template layer by radio-frequency (RF) sputtering. The epitaxial growth of Nb-SrTiO3 was achieved in an Ar environment at a substrate temperature of 540°C. The orientation relationship was determined to be simply cube-on-cube as Nb-SrTiO3 (001)[110]||TiN(001) [110]||Si(001)[110]. The deposited Nb-SrTiO3 films show a smooth and featureless surface with roughness below 1 nm. These smooth Nb-doped SrTiO3/TiN/Si films have a conductivity of 500 S/cm and could be promising electrodes for subsequent ferroelectric thin films.