Accounting for Dose-Enhancement Effects with CMOS Transistors
Dose-enhancement effects are monitored with standard CMOS transistors by measuring thresholdvoltage shifts due to oxide-trapped charge and interface states. These results, in conjunction with studies of the effects of trapped-hole annealing and electron-hole recombination, are used to correlate the responses of transistors irradiated with Co-60 gamma rays or 10 keV X rays.