Mathematical modeling of the cathodoluminescence of excitons generated by a narrow electron beam in a semiconductor material
A mathematical model of the cathodeluminescence of free excitons excited by a narrow electron beam in a semiconductor material is described and investigated. The model is based on an analytical solution to equations of the three-dimensional diffusion of excitons. It is shown that the model can be used to estimate the diffusivity of excitons from experimental time-of-flight measurements of samples coated with a lightproof mask with round apertures. The parameters of gallium nitride were used in the modeling.