Improvement of the interface properties of Ca0.43Se0.57F2 on GaAs(100) by rapid thermal annealing
The interface properties of Ca0.43Sr0.57F2 films grown by a thermal evaporation technique on GaAs(100) substrates were investigated. It was found that in situ rapid thermal annealing, typically at 590 degrees C for 10 s, was useful for improving the interface properties of fluoride/GaAs MIS structures. Analysis by double crystal X-ray diffraction and photoluminescence spectroscopy indicates good interface of the Ca0.43Sr0.57F2/GaAs heterostructure.