Structural characterization of GaAs1−xBix alloy by rutherford backscattering spectrometry combined with the channeling technique
Rutherford backscattering spectrometry (RBS) combined with the channeling technique has been applied to a GaAs1−xBix epilayer to investigate concentration and lattice location of Bi atoms and crystalline quality of the epilayer. The metastable GaAs1−xBix alloy layer was grown on a GaAs substrate at a temperature as low as 365°C. The GaBi mole fraction obtained was 2.6 ± 0.2%. Angular scans for [100] and [111] crystal directions reveal that the incorporated Bi atoms exactly occupy substitutional sites in the GaAs crystal lattice. Crystal perfection of the GaAs1−xBix metastable alloy is fairly good in spite of the low growth temperature.