LWIR HgCdTe barrier photodiode with Auger-suppression
This paper reports on advanced metalorganic chemical vapor deposition (MOCVD) grown HgCdTe barrier photodiodes for long wave infrared (LWIR) application. The n+p+Bp πN+ device is a concept of a specific barrier bandgap architecture integrated with Auger-suppression as a good solution for high operating temperature (HOT) infrared detectors with high detectivity and sub-nanosecond time constant. The design approach, growth aspects and detector characterization of HgCdTe n+p+Bp πN+ barrier photodiodes operated with thermoelectric cooling (230 K) have been discussed in the paper. The influence of absorber thickness on the device's properties has been analyzed in the experiment.