Elementary study of PIN diode as device delayed breakdown
This paper summarizes an experimental study of the delayed breakdown performance of silicon PIN diode. Single PIN diode, double series PIN diodes and stacked PIN diodes in parallel and series were tested,the results shown that the pulsefronts of input voltage became steep obviously.Single PIN diode operates at a hold-off voltage exceeding 2.2 kV, and the time rate of voltage(dV/dt) is promoted from 0.95 kV/ns to 1.37 kV/ns. Double series PIN diodes operates at a hold-off voltage of 4.2 kV, and the dV/dt is promoted from 1.7 kV/ns to 2.3 kV/ns. Stacked PIN diodes in parallel and series operate at a hold-off voltage of 8.0 kV,and the dV/dt is promoted from 2.4 kV/ns to 3.2 kV/ns.