Room temperature laser emission of 1.5 μm from InAs/InP(311)B quantum dots
We report on the 1.5 μm laser emission from InAs quantum dots (QDs) grown on a InP(311)B substrate. The control of the optical wavelength emission is obtained by a two-step modified growth procedure, called the 'double cap' procedure. This enables us to obtain a 1.55 μm optical emission from InAs/InP(311)B QDs, with a narrow height dispersion. Laser emission on a six-stacked InAs QD layer sample has been demonstrated with optical excitation at room temperature. Lasing has been obtained on an excited state, for a low optical excitation density of 10 kW cm−2. This shows that a QD laser could emit at the optical telecommunication wavelength.