X-ray diffraction analysis of epitaxal film distortions on miscut substrates (001)
A method for determining the structural parameters of epitaxial layers by X-ray difractometry was developed. The proposed model allows us to analyze the triclinic distortions that arise in heterosystems with nonsingular orientations. Slew angles of dislocation film lattice GexSi1 − x with respect to Si substrate have been obtained.