Pit formations at AL/(100)Si contact windows
AbstractThe kinetics of etch-pit formation at Al/(100)Si contact windows have been investigated by scanning electron microscopy. Pit growth, which is controlled by the diffusion of Si into the overlying Al, exhibits an activation energy of 0.8 eV. After a 450°C, H2 anneal, the median pit size
$$\bar l(\mu m)$$
 is related to the Al/Si contact areaw (µm2) by an equation of the form
$$\bar l$$
 ∝(w)-0.4. This relationship is valid for both induction-source and electron-beam evaporated Al, of 0.8 µm and 4.0 µm grain sizes, respectively.