Shallow traps in As-implanted silicon dioxide
The shallow electron traps introduced by As implantation in thermal SiO2 were investigated using the avalanche injection technique. In oxygen-deficient oxides the trapping behaviour was dominated by a shallow trap with a capture cross section of 1*10-15 cm2. The supply of oxygen leads to a decrease in the density of this trap and in a fully oxidized network it is completely annihilated. In the latter case all As atoms are incorporated in the SiO2 network as deep electron traps.