X-ray channeling technique using anomalous transmission and its application to si micro-defects induced by heat treatment
X-ray channeling (XRC) technique using anomalous transmission is newly developed as a method of evaluating micro-defects in bulk single crystals. It is ascertained that there is a definite correlation between the decrease of the (hkl) anomalously transmitted intensity and the characteristic of the lattice defect. The present XRC technique has been tentatively applied to micro-defects (M.D.’s) induced in Si during heat treatment. As a result, it is conjectured that dislocation loops and stacking faults are preferentially induced during N2 atmosphere annealing at 1040‡C and wet O2 atmosphere annealing at 1100‡C, respectively, though precipitates are also generated during both annealings.