Room temperature operational single electron transistor on the macroscopic surface of hydrogenated diamond like carbon
This paper shows single electron transistor at room temperature,created on macroscopic system-the two-dimensional large area surface of our hydrogenated diamond like carbon thin film. Our results, free from the limitation of lowering the size of coulomb blockade in sub-nanometer range with the existing unprofitable process,are consistent with the theoretical results and will be relevant for future practical applications in the realm of atomic physics, quantum phenomenon and metrology.