A computer investigation of electron field emission from n-InSb at low temperatures
Electron transport in an n-InSb-vacuum emitter is investigated by means of the self-consistent solution of Poisson and Boltzmann equations using the Monte Carlo technique. Electron transport characteristics (energy distribution function, mean kinetic energy, etc) are evaluated at different values of the applied electric field and temperatures, since they influence the emitter performance. It is found that the emission current from n-InSb at low temperatures as well as at room temperatures is dominated by thermalized -valley electrons.