The effect of annealing temperature on the carrier concentration OF Hg0.6Cd0.4Te
The carrier concentration dependence of Hg0.6Cd0.4Te on annealing temperature for the Hg and Te saturation condi-tions is presented in this paper. At low annealing tempera-tures, TA < 350‡ C, residual donor impurities apparently limit the carrier concentration. In contrast, at higher annealing temperatures, 350‡ C < T < 700‡ C, the stoichio-metric acceptor density is increased such that the residual donors are compensated and the material is converted to p-type with an acceptor density as large as 1017 cm−3 . An empirical expression describing this dependence of the acceptors on annealing temperature is given for both the Hg and Te saturation condition: P (Hg saturation) = 1.46 × 1022 exp (−0.84/kTA), P (Te saturation) = 1.90 × 1018 exp (−0.15/kTA).