A magnetoresistance device based on a magnetic-barrier nanostructure
A magnetoresistance device is proposed in a two-dimensional electron gas modulated by a magnetic barrier, which can be realized experimentally by the deposition of two parallel ferromagnetic strips on the top and bottom of a GaAs heterostructure. A considerable magnetoresistance effect is found in this device, due to the significant difference between electronic transmissions through parallel and antiparallel magnetization configurations.