An alternate and simpler method for finding the field-dependent defect density of SiO2 films using MOS capacitor devices
Abstract An alternate and simpler method, based on extreme value statistics, is proposed to determine the field-dependent defect density of SiO 2 films from the mean breakdown voltage of two MOS capacitors with different areas. It is shown that the values of the field-dependent defect densities evaluated by this method agree very well with the experimental results.