Halogen lamp rapid thermal annealing of Si- and Be-implanted In0.53Ga0.47As
Halogen lamp rapid thermal annealing was used to activate 100 keV Si and 50 keV Be implants in In0.53Ga0.47As for doses ranging between 5 × 1012−4 × 1014 cm−2. Anneals were performed at different temperatures and time durations. Close to one hundred percent activation was obtained for the 4.1 × 1013 cm−2 Si-implant, using an 850° C/5 s anneal. Si in-diffusion was not observed for the rapid thermal annealing temperatures and times used in this study. For the 5 × 1013 cm−2 Be-implant, a maximum activation of 56% was measured. Be-implant depth profiles matched closely with gaussian profiles predicted by LSS theory for the 800° C/5 s anneals. Peak carrier concentrations of 1.7 × 1019 and 4 × 1018 cm−3 were achieved for the 4 × 1014 cm−2 Si and Be implants, respectively. For comparison, furnace anneals were also performed for all doses.