Effects of Low Temperature Annealing of B+ + Si+ OR BF2+ + Si+ Implanted Silicon
Silicon wafers have been implanted with B+ or BF2+ at two different energies. Some of the wafers were subsequently implanted with Si at room temperature or at LN2 temperature to enhance the lattice damage. The wafers were annealed at temperatures ranging from 6000C to 9000C. The effects of the different implant energies and of the resulting lattice damage, dopant profiles and electrical properties will be discussed.