Analysis of TID Failure Modes in SRAM-Based FPGA Under Gamma-Ray and Focused Synchrotron X-Ray Irradiation
This study investigates the total ionizing dose effect in static random access memory (SRAM)-based field programmable gate array (FPGA). In addition toY ray whole-chip irradiation, focused synchrotron x-ray irradiation with beam size of 20 μm is also used. As a result, the most vulnerable inner circuit in the SRAM-based FPGA is determined directly. Circuit simulation is also executed to understand the failure phenomenon further. The simulated results are consistent with the experimental results.