High-power silicon P-i-N diode with cathode shorts: The impact of electron irradiation
Abstract Large-area silicon P–i–N diodes ( V RRM  = 4.5 kV, I FAV  ≈ 3 kA, A active  ≈ 55 cm 2 ) were processed with cathode shorts in order to conserve the softness under reverse recovery, while employing a 10% thinner silicon wafer for a better technology curve for the static and dynamic losses. Contrarily to existing designs, the cathode shorts have approximately one order of magnitude higher surface concentration of the P + layer than the N + emitter. Except for the implanted N-type buffer, these shorts were processed using the dopant deposition from POCl 3 and H 3 BO 3 . The diodes with and without cathode shorts have been compared for the static parameters. The dynamic behavior has been also compared at reverse recovery of a free-wheeling diode in a standard IGCT circuit. The impact of electron irradiation on the softness of the reverse recovery has been evaluated up to 125 °C.