Thermoelectric power of ferrous oxide, Fe1−yO, at high temperatures
Abstract This paper presents the results of thermoelectric power measurements for a monocrystalline ferrous oxide as a function of temperature (1273–1573 K) and oxygen pressure in the whole range of Fe 1− y O phase stability. It has been shown that the electrical properties of Fe 1− y O cannot be described satisfactorily if electron holes are assumed to be the only charge carriers. The analysis of thermoelectric power has revealed a semiconductor - metal transition resulting from defect structure.