Time-resolved measurements of dislocation-related photoluminescence bands in silicon
Time decay measurements of dislocation-related PL have been performed for plastically deformed Si samples. Dislocation structures with different spectra were realized by deformation and subsequent thermal treatment. In all cases the decay time of the D1 band is less than that of the D2 band. Intrinsic properties of dislocations may therefore define the difference in decay times between the two bands. We compare this observation with previous results and propose a model of recombination between shallow and deep levels for D1/D2 bands. Different decay times are attributed to different spatial separation of shallow traps from a common deep trap.