Low energy cluster beam deposited BN films as the cascade for field emission
Abstract.The atomic deposited BN films with the thickness of nanometers (ABN) were 
prepared by radio frequency magnetron sputtering method and the 
nanostructured BN films (CBN) were prepared by Low Energy Cluster Beam 
Deposition. UV-Vis Absorption measurement proves the band gap of 4.27 eV and 
field emission of the BN films were carried out. F-N plots of all the 
samples give a good fitting and demonstrate the F-N tunneling of the 
emission process. The emission of ABN begins at the electric field of 14.6 V/μm while that of CBN starts at 5.10 V/μm. Emission current 
density of 1 mA/cm2 for ABN needs the field of 20 V/μm while that of 
CBN needs only 12.1 V/μm. The cluster-deposited BN on n-type Silicon 
substrate proves a good performance in terms of the lower gauge voltage, 
more emission sites and higher electron intensity and seems a promising 
substitute for the cascade of field emission. 

