EBIC determination of lateral dopant diffusion and junction depth in planar devices
A measurement method based on the electron beam induced current (EBIC) phenomenon is described; it gives the lateral dopant diffusion in planer devices and allows an estimation of the junction depth. The method is particularly well suited for deep junctions and does not require any cleavage or removal of the field oxide on top of the structure. It is a quick and convenient method for device failure analysis or device reverse-engineering. The method has been checked with a numeric simulation and measurements on two bipolar transistors.