Optical properties of InAs quantum wells emitting between 0.9 mu m and 2.5 mu m
InAs/AlxGa0.48-xIn0.52As single and multiple quantum wells (QWS) grown in InP by modified solid source molecular beam epitaxy are investigated by photoluminescence (PL) spectroscopy. By adjusting the QW thickness between 2 and 16 monolayers (ML) and the barrier composition between Al0.48In0.52As and Ga0.47In0.53As, the PL emission can be tuned from 1.0 to 2.2 mu m. The excitonic nature of the low-temperature recombinations and the observations of luminescence at room temperature demonstrate the high quality of the samples and the potential of the InAs/AlxGa0.48-xIn0.52As system for optoelectronic device applications.