High efficiency of AlInGaN/Al(In)GaN delta AlGaN quantum wells for deep ultraviolet emission
Abstract Band structure and optical gain properties of AlInGaN/AlInGaN delta AlGaN quantum wells for deep ultraviolet light emitting and lasers diodes with wavelength l ~229 nm and TE polarized optical gain peak intensity ~1.7 times larger than the conventional AlInN delta GaN was proposed and investigated in this work. The active region is made up of 20 A staggered Al 0.89 In 0.03 Ga 0.08 N/Al 0.8 In 0.01 Ga 0.19 N layers with a 3 A Al 0.46 Ga 0.54 N delta layer. The use of the quaternary AlInGaN well layer permits the independent control of the band gap and the lattice parameter, so that the internal electric field induced by polarizations can be reduced and interband transition energy increases. Therefore, we can predict that the optical performance of the AlInGaN delta AlGaN is more convenient for an emission in the deep ultraviolet than that of the conventional AlInN delta GaN based quantum wells.