Boron doped g C3N4 with enhanced photocatalytic UO22+ reduction performance
Abstract Tuning the band gap and absorption intensity of visible light by element doping is an attractive strategy to enhance the photocatalytic activity of semiconductor materials. Here we doped boron into g C 3 N 4 to construct highly efficient photocatalysts (B g C 3 N 4 for the photocatalytic reduction of UO 2 2+ Characterization and photocatalysis tests showed the band gap of B g C 3 N 4 was narrowed, and the absorption intensity of visible light was enhanced with increasing the formed N B C (B CN of B g C 3 N 4 which is consistent with the trend of the photocatalytic performance of B g C 3 N 4 The optimized B g C 3 N 4 photocatalyst with B CN content of 1.01 at. exhibited excellent removal efficiency of UO 2 2+ and good photocatalytic stability. Therefore, these results may lead to a new strategy for exploring the advanced photocatalysts based on the carbon nanomaterials with abundant B CN for the photocatalytic reduction of U(VI) pollutant.