Role of Sb Substitution on Electrical Properties of Se Te Glasses
Objectives: This paper reports the influence of Sb addition on the electrical properties on bulk samples of Se80 xTe20Sbx(x=0,6, 12) glasses. Methods/Statistical Analysis: The amorphous samples have been prepared using melt quenching method and the pellets of the bulk sample of thickness 1mm and diameter 5mm has been formed using pelletiser. The I V measurements of pellets have been recorded on Keithley electrometer in the temperature range 298 398 K. The data obtained is analysed to calculate activation energy of conduction and temperature dependent dc electrical conductivity. Findings: The observations suggest that conductivity decreases due to formation of highly crosslinked structure when Sb is added in less amount i.e. 6 at.wt% whereas on addition of Sb upto 12 at. wt. conductivity increases significantly due to increase in ring structure and decrease of steric hindrance in system. Earlier reports on the electrical properties of Se Te Sb system provided information upto 10 at. wt. of Sb addition to Se Te system, whereas in present study Sb is added upto 12 at.wt. to get its influence on electrical properties of Se Te system. Applications/Improvements: The higher content of Sb in Se Te system increases the electrical conductivity which makes it a potential candidate for application in electronic devices.