InAs/InAs1 xSbx type II superlattices for high performance long wavelength infrared detection
We report InAs/InAs1 xSbx type II superlattice base photodetector as high performance long wavelength infrared nBn device grown on GaSb substrate. The device has 6 mm thick absorption region, and shows optical performance with a peak responsivity of 4.47 A/W at 7.9 mm, which is corresponding to the quantum efficiency of 54% at a bias voltage of negative 90 mV, where no anti reflection coating was used for front side illumination. At 77K, the photodetector's 50% cut off wavelength was ~10 mm. The device shows the detectivity of 2.8x1011 cm.Hz/W at 77 K, where RxA and dark current density were 119 O*cm2 and 4.4x10 4 A/cm2 respectively, under 90 mV applied bias voltage.
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