Impurity doping effects on the orbital thermodynamic properties of hydrogenated graphene, graphane, in Harrison model
Using the Harrison model and Green's function technique, impurity doping effects on the orbital density of states (DOS) electronic heat capacity (EHC) and magnetic susceptibility (MS) of a monolayer hydrogenated graphene, chair like graphane, are investigated. The effect of scattering between electrons and dilute charged impurities is discussed in terms of the self consistent Born approximation. Our results show that the graphane is a semiconductor and its band gap decreases with impurity. As a remarkable point, comparatively EHC reaches almost linearly to Schottky anomaly and does not change at low temperatures in the presence of impurity. Generally, EHC and MS increases with impurity doping. Surprisingly, impurity doping only affects the salient behavior of py orbital contribution of carbon atoms due to the symmetry breaking.