Compact Modeling of Negative $V_{t} Shift Disturb in NAND Flash Memories
The negative Vt shift disturb is one of the new scaling limiters for the NAND Flash technology, since it severely affects the reliability of ultra scaled products, lowering the read margin between the distributions in multilevel cell architectures. However, even if the phenomenon was thoroughly investigated, it lacks a proper model to be exploited for the development of tailored management solutions. In this paper, we have developed a compact model for the negative Vt shift disturb simulation in NAND Flash arrays. The model accurately reproduces experimental data retrieved on a 26 nm technology. The application of the model for the fast and accurate statistical assessments of the reliability loss induced by the disturb is shown through the execution of Monte Carlo simulations.
IEEE Transactions on Electron Devices