Evaluation of Post Etch Residue Cleaning Solutions for the Removal of TiN Hardmask after Dry Etch of Low k Dielectric Materials on 45 nm Pitch Interconnects
In the BEOL, as interconnect dimensions shrink and novel materials are used, it has become increasingly difficult for traditional PERR removal chemicals to meet the evolving material compatibility requirements. As a result, formulated cleans that specifically target these unique challenges are required. Two formulated BEOL cleans were evaluated on blanket and patterned wafer coupons for their ability to wet etch titanium nitride (TiN) and clean post plasma etch residue, while remaining compatible to interconnect metals (Cu and W) and low k dielectric (k 2.4) Both, showed an improvement in material compatibility relative to dilute HF, while simultaneously being able to remove the TiN hardmask and post etch residue, leading 90% yield on test structures of varying sizes.