Four layer 3D vertical RRAM integrated with FinFET as a versatile computing unit for brain inspired cognitive information processing
For the first time, a four layer HfOx based 3D vertical RRAM, the "tallest" one ever reported, is developed and integrated with FinFET selector. Uniform memory performance across four layers is obtained 0.8V switching, 106 endurance, 104s@125degC) SPICE simulations show that high drive current of pillar select transistors is required for high rise 3D RRAM arrays. The four layer 3D RRAM is a versatile computing unit for (a) brain inspired computing and (b) in memory computing. (a) Stochastic RRAM synapses enable robust pattern learning for a 3D neuromorphic visual system. The 3D architecture with dense and balanced neuron synapse connections provides 55% EDP savings and 74% VDD reduction (enhanced robustness) compared with conventional 2D architecture; (b) in memory logic such as NAND, NOR, and bit shift, are essential elements for hyper dimensional computing. Utilizing the unique vertical connection of 3D RRAM cells, these operations are performed with little data movement.
2016 IEEE Symposium on VLSI Technology