Increase in the scattering of electric field lines in a new high voltage SOI MESFET
Abstract This paper illustrates a new efficient technique to enhance the critical features of a silicon on insulator metal semiconductor field effect transistor (SOI MESFET) applied in high voltage applications. The structure we proposed utilizes a new method to scatter the electric field lines along the channel region. Realization of two trenches with different materials, which a trench is created in the channel region and the other one is created in the buried oxide, helps the proposed structure to improve the breakdown voltage, driving current, drain source conductance, minimum noise figure, unilateral power gain and output power density. Exploring the obtained results, the proposed structure has superior electrical performance in comparison to the conventional structure.