Formation of copper tin sulfide films by pulsed laser deposition at 248 and 355 nm
The influence of the laser wavelength on the deposition of copper tin sulfide (CTS) and SnS rich CTS with a 248 nm KrF excimer laser (pulse length t 20 ns) and a 355 nm frequency tripled Nd:YAG laser (t 6 ns) was investigated. A comparative study of the two UV wavelengths shows that the CTS film growth rate per pulse was three to four times lower with the 248 nm laser than the 355 nm laser. SnS rich CTS is more efficiently ablated than pure CTS. Films deposited at high fluence have submicron and micrometer size droplets, and the size and area density of the droplets do not vary significantly from 248 to 355 nm deposition. Irradiation at low fluence resulted in a non stoichiometric material transfer with significant Cu deficiency in the as deposited films. We discuss the transition from a non stoichiometric material transfer at low fluence to a nearly stoichiometric ablation at high fluence based on a transition from a dominant evaporation regime to an ablation regime.