Prediction of Electric Field Effects on Defect Free Self Assembled Nano Patterning of Block Copolymer.
For future semiconductor device scaling, self assembly, directed self assembly (DSA) of block copolymers (BCPs) is a promising method with simplified processing conditions; however, critical challenge is defect control for fine pattern. Electric field is a method for the defect control. In this paper, for electric field effects to jog defects, the electric field induced self assembled patterns is modeled and simulated by using the Monte Carlo method of dielectric polymers, the self consistent field theory (SCFT) and the Navier Stokes equation. Electric field effects are quantified by using defect degree. Defective patterns are forced to undergo a phase transition to lamellar phase under electric field. For the high electric field, the excess free energy for the defect free state becomes small. Simulation results can help to optimize electric field and process time in terms of defect area.
Journal of nanoscience and nanotechnology