A 0.035mm2 150mA fast response low dropout regulator based on matching enhanced error amplifier and multi threshold controlled unity gain buffer in 0.13mm CMOS
A low dropout regulator (LDR) using a matching enhanced error amplifier (ME EA) and a multi threshold controlled unity gain buffer (MTC UGB) is proposed in this work. With the majority of transistors being high voltage devices of the process, the regulator tolerates a high in put voltage range, which alleviates the reliability concern caused by low voltage transistors. The ME EA allows for tight line and load regulations. The MTC UGB, by using low voltage input transistors with locally regulated terminal voltage, enables large loop bandwidth and fast load transient responses without using compensation capacitor or large ESR of the output capacitor for compensation. Fabricated in a 0.13mm CMOS process, the proposed LDR occupies 0.035 mm2 of active area and consumes 18 mA of quiescent current and achieves 6 mV of voltage dip for 150 mA of load transient.
2016 IEEE International Symposium on Circuits and Systems (ISCAS)