Influence of Growth Conditions of Hydrogenated Amorphous Silicon Carbide on Optical Properties of the Interfacial Layer in SiC Based Photodevice
Influence of Growth Conditions of Hydrogenated Amorphous Silicon Carbide on Optical Properties of the Interfacial Layer in SiC Based Photodevice S. Kacia, A. Keffous, I. Bozetine, M. Trari and O. Fellahi Research Center on Semiconductor Technology for Energetic, 2 Bd Frantz Fanon, PB 140, 7M Algiers, Algeria University of Science and Technology Houari Boumediene, PB 32, ElAlia, Bab Ezzouar, Algiers, Algeria