Modeling DC, RF and noise behavior of GaN HEMTs using ASM HEMT compact model
In this paper, we aim to present a surface potential based model for GaN High Electron Mobility Transistors. The analytical model is computationally efficient and can be accurately used for DC and RF predictions. It includes various effects of velocity saturation, access region resistance, temperature, gate current and noise.
2016 IEEE MTT S International Microwave and RF Conference (IMaRC)