Hexagonal phase pure wide band gap e Ga2O3 films grown on 6H SiC substrates by metal organic chemical vapor deposition
In this paper, hexagonal structure phase pure wide band gap e Ga2O3 films were grown by metal organic chemical vapor deposition on 6H SiC substrates. The e Ga2O3 films with good crystal quality were verified by high resolution X ray diffraction. The out of plane epitaxial relationship between e Ga2O3 films and 6H SiC substrates is confirmed to be e Ga2O3 (0001)/6H SiC (0001) and the in plane epitaxial relationship is also confirmed to be e Ga2O3 112 0> /6H SiC 112 0> The SEM and AFM images show that the e Ga2O3 films are uniform and flat. The e Ga2O3 films are thermally stable up to approximately 800 degC and begin to transform into b phase Ga2O3 at 850 degC. Then, they are completely converted to b Ga2O3 films under 900 degC. The high quality e Ga2O3 films with hexagonal structure have potential application in the optoelectronic field.