Patterning of nanodot arrays using EUV achromatic Talbot lithography at the Swiss Light Source and Shanghai Synchrotron Radiation Facility
Achromatic Talbot lithography (ATL) at extreme ultraviolet (EUV) wavelengths has been used to produce one or two dimensional periodic patterns over large areas. In this work, an ATL transmission mask was used to perform EUV exposures at 13.5nm and 8.8nm illumination wavelengths at two different synchrotron facilities, to study the broadband nature of the method and the used mask as well as to investigate the influence of illumination parameters and experimental arrangements. The experiments were performed at the Swiss Light Source (SLS) PSI, Switzerland, and at the Shanghai Synchrotron Radiation Facility (SSRF) P. R. China. Achromatic Talbot lithography was proven to be a simple and robust interference lithography scheme for producing large area and high resolution patterns suitable for different wavelengths and for a variety of EUV sources and setups. Display Omitted High resolution patterning of 20nm dots at 100nm pitch using achromatic Talbot lithography at broadband EUV illumination.Easy to fabricate ATL mask for efficient nano lithography with various EUV beamlines of differing illumination parameters.Exposures at the Swiss Light Source and the Shanghai Synchrotron Radiation Facility were performed and compared.