Enhanced resistive switching in all printed, hybrid and flexible memory device based on perovskite ZnSnO3 via PVOH polymer
Abstract Resistive switching effect has been explored in the hybrid nanocomposite of organic inorganic materials by fabricating all printed memristive device on a flexible PET substrate. Configuration of as fabricated device is Ag/PVOH ZnSnO 3 /Ag. Extremely uniform and high quality bottom Ag electrodes were deposited by reverse offset printing. Active layer of PVOH ZnSnO 3 nanocomposite was deposited by electrohydrodynamic (EHD) atomization and top Ag electrode was deposited by a non contact printing technique of EHD patterning. Electrical and mechanical characterization showed that resistive switching characteristics of ZnSnO 3 were remarkably enhanced by adding PVOH polymer in it. The fabricated device showed bipolar, nonvolatile and rewritable memory behavior at low operating voltage. A high off/on ratio, endurance and retention time of 10 2 500 voltage cycles and 36 h respectively were recorded without any substantial change in either HRS or LRS. The fabricated memory device showed remarkable mechanical robustness when tested against 1500 bending cycles.