Gate all around MOSFETs based on vertically stacked horizontal Si nanowires in a replacement metal gate process on bulk Si substrates
We report on gate all around (GAA) n and p MOSFETs made of 8 nm diameter vertically stacked horizontal Si nanowires (NWs) We show that these devices, which were fabricated on bulk Si substrates using an industry relevant replacement metal gate (RMG) process, have excellent short channel characteristics (SS 65 mV/dec, DIBL 42 mV/V for LG 24 nm) at performance levels comparable to finFET reference devices. The parasitic channels below the Si NWs were effectively suppressed by ground plane (GP) engineering.
2016 IEEE Symposium on VLSI Technology