Plasma induced highly efficient synthesis of boron doped reduced graphene oxide for supercapacitors.
In this work, we presented a novel route to synthesize boron doped reduced graphene oxide (rGO) by using the dielectric barrier discharge (DBD) plasma technology under ambient conditions. The doping of boron (1.4 at% led to a significant improvement in the capacitance of rGO and supercapacitors based on the as synthesized B rGO exhibited an outstanding specific capacitance.
Chemical communications