121068358
Production of prompt muons in the forward direction by 400-GeV proton interactions
The ratio of prompt negative muons to negative pions produced in the forward direction by the interaction of 400-GeV protons on copper has been determined to be 5.8times10$sup -5$ for 55-GeV muons, 3.05times10$sup -5$ for 102- GeV muons, and 1.93times10$sup -5$ for 230-GeV muons. The ratio of prompt positive muons to negative muons was about 1. (AIP)
126117538
Polarization of Prompt Muons
The polarization of 185-GeV prompt muons produced in the forward direction by the interaction of 400-GeV protons has been measured to be P=0.00 +- 0.10 along their direction of flight. The null value for the polarization suggests that the muons are produced through electromagnetic interactions. (AIP)
121887220
The OPAL vertex drift chamber
Abstract A high precision vertex drift chamber has been installed in the OPAL experiment at LEP. The design of the chamber and the associated readout electronics is described. The performance of the system has been studied using cosmic ray muons and the results of these studies are presented. A space resolution of 50 μm in the drift direction is obtained using the OPAL central detector gas mixture at 4 bar.
109327315
Junction depth dependence of breakdown in silicon detector diodes
Abstract The high voltage capability of detector diodes fabricated in the planar process is limited by the high field generated at the edge of the junction. We have fabricated diodes with increased junction depth with respect to our standard process and find a significantly higher breakdown voltage, in reasonable agreement with previous studies of junction breakdown.
120133715
Comparison of signals obtained from oxygenated and non-oxygenated silicon microstrip detectors after irradiation to 3×1014 p cm−2
Abstract Full size silicon microstrip detectors have been prototyped for the LHC and fabricated on both oxygenated and non-oxygenated substrate material. The detectors were irradiated with protons to 3×10 14 p cm −2 and their signals compared as a function of bias voltage after short-term and long-term annealing.