109702771
Functional characterization of irradiated 3D-DDTC pixel sensor prototypes fabricated at FBK
In this paper we discuss results relevant to 3D Double-Side Double Type Column (3D-DDTC) pixel sensors fabricated at FBK (Trento, Italy) and oriented to the ATLAS upgrade.
110855495
Performance of novel silicon n-in-p planar pixel sensors
Abstract The performance of novel n-in-p planar pixel detectors designed for future upgrades of the ATLAS Pixel system is presented. The n-in-p silicon sensors technology is a promising candidate for the pixel upgrade thanks to its radiation hardness and cost effectiveness that allow for enlarging the area instrumented with pixel detectors. The n-in-p modules presented here are composed of pixel sensors produced by CiS connected by bump-bonding to the ATLAS read-out chip FE-I3. The characterization of these devices has been performed before and after irradiation up to a fluence of 5×10 15 1 MeV n eq cm −2 . Charge collection measurements carried out with radioactive sources have proven the functioning of this technology up to these particle fluences. First results from beam test data with a 120 GeV/ c pion beam at the CERN-SPS are also discussed, demonstrating a high tracking efficiency of (98.6±0.3)% and a high collected charge of about 10 ke for a device irradiated at the maximum fluence and biased at 1 kV.
10917941
Selected results from the static characterization of edgeless n-on-p planar pixel sensors for ATLAS upgrades
In view of the LHC upgrade for the High Luminosity Phase (HL-LHC), the ATLAS experiment is planning to replace the Inner Detector with an all-Silicon system. The n-on-p technology represents a valid solution for the modules of most of the layers, given the significant radiation hardness of this option and the reduced cost. There is also the demand to reduce the inactive areas to a minimum. The ATLAS LPNHE Paris group and FBK Trento started a collaboration for the development on a novel n-on-p edgeless planar pixel design, based on the deep-trench process which can cope with all these requirements. This paper reports selected results from the electrical characterization, both before and after irradiation, of test structures from the first production batch.
13977913
ATLAS IBL: a challenging first step for ATLAS Upgrade at the sLHC
With the LHC collecting data at 7 TeV, plans are already advancing for a series of upgrades leading eventually to about five times the LHC design luminosity some 10 years from now in the High Luminosity LHC (HL-LHC) project. The upgrades for ATLAS detector will be staged in preparation for HL-LHC. The first upgrade for the Pixel Detector will be the construction of a new pixel layer, which will be installed during the first shutdown of the LHC machine foreseen in 2013-14. The new detector, called the Insertable B-Layer (IBL) will be installed between the existing Pixel Detector and a new, smaller radius beam-pipe at the radius of 3.2 cm. The IBL will require the development of several new technologies to cope with increased radiation and pixel occupancy and also to improve the physics performance through reduction of the pixel size and more stringent material budget. Two different and promising Silicon sensor technologies (planar n-in-n and 3D) are currently under investigation for the IBL. An overview of the IBL module design and the qualification for these sensor technologies are presented in this proceeding. This proceeding also summarizes the improvements expected to the ATLAS detector at the HL-LHC.
22008201
Characterization of 3D-DDTC detectors on p-type substrates
We report on the electrical and functional characterization of 3D Double-side, Double-Type-Column (3D-DDTC) detectors fabricated on p-type substrates. Results relevant to detectors in the diode, strip and pixel configurations are presented, and demonstrate a clear improvement in the charge collection performance compared to the first prototypes of these detectors.
110657741
Novel silicon n-in-p pixel sensors for the future ATLAS upgrades
Abstract In view of the LHC upgrade phases towards HL-LHC the ATLAS experiment plans to upgrade the inner detector with an all silicon system. The n-in-p silicon technology is a promising candidate for the pixel upgrade thanks to its radiation hardness and cost effectiveness that allow for enlarging the area instrumented with pixel detectors. We present the characterization and performance of novel n-in-p planar pixel sensors produced by CiS (Germany) connected by bump bonding to the ATLAS readout chip FE-I3. These results are obtained before and after irradiation up to a fluence of 10 16 1-MeV n eq cm − 2 , and prove the operability of this kind of sensors in the harsh radiation environment foreseen for the pixel system at HL-LHC. We also present an overview of the new pixel production, which is on-going at CiS for sensors compatible with the new ATLAS readout chip FE-I4.
59946833
ARGO-YBJ Computing Model. Data Analysis and Hard- ware/Software Architecture of the Processing Farm
The Chinese-Italian experiment ARGO-YBJ in Tibet is going to start next spring the first period of data-taking with 36 RPC clusters installed. The paper describes the computing model and the hardware resources required for data reconstruction and analysis. The present configuration of the processing farm, composed by 24 biprocessors computing elements and 4 diskserves (7.5 TB total) is describeds. The software designed and developed for data organization, reconstruction job submission, data analysis and error management is briefly reported. The management software of the farm, including the GRIDWARE queuing and submission package, the DB design and the monitoring software are also described.