119881709
A comparative study of oxygenated and non-oxygenated Si pad diodes, miniature and large area microstrip detectors
Abstract Large area and miniature microstrip detectors were processed by Micron Semiconductor Ltd on oxygenated silicon and non-oxygenated material. The pre-irradiation and post-irradiation IV and inter-strip capacitance values all agree between the control devices and those with enhanced oxygen. After irradiation, the capacitance-voltage (CV) derived depletion voltage for the oxygenated detector is lower than that for the control device. However, the difference appears less marked than is typically seen with diodes. The charge collection properties were studied with 1064 nm laser and minimum ionising electrons (m.i.p.'s) from a 106 Ru source, with a good agreement between light-spot and source data. We found evidence for improvement in oxygenated detectors from this run with this supplier but again, not as pronounced as might be expected from the diode studies.
109327315
Junction depth dependence of breakdown in silicon detector diodes
Abstract The high voltage capability of detector diodes fabricated in the planar process is limited by the high field generated at the edge of the junction. We have fabricated diodes with increased junction depth with respect to our standard process and find a significantly higher breakdown voltage, in reasonable agreement with previous studies of junction breakdown.
121849522
The design and calibration of precision drift chambers for use in a gluonium search experiment at the CERN ISR
We describe the design, construction and calibration of a set of high precision drift chambers. The precise coordinate (σ ∼ 120 μm) is determined by drift time measurement, with the orthogonal coordinate given by the charge division method (σ∼1.2 mm). The chambers have been calibrated using a well-defined laser beam. Their use within a gluonium search experiment at the CERN ISR is also described.
15200439
Robotic mounting of ATLAS barrel SCT modules
The 2112 silicon detector modules of the barrel part of the ATLAS SemiConductor Tracker (SCT) have been mounted on their carbon fibre support structure. Module insertion, placement and fixing were performed by robotic assembly tooling. We report on our experience with this assembly method. Part of the mounting sequence involves a partial survey of elements of the support structure which is needed to align the modules properly during insertion. An analysis of these data is used to estimate the positional accuracy of the
121068358
Production of prompt muons in the forward direction by 400-GeV proton interactions
The ratio of prompt negative muons to negative pions produced in the forward direction by the interaction of 400-GeV protons on copper has been determined to be 5.8times10$sup -5$ for 55-GeV muons, 3.05times10$sup -5$ for 102- GeV muons, and 1.93times10$sup -5$ for 230-GeV muons. The ratio of prompt positive muons to negative muons was about 1. (AIP)