( ( ( Ion implantation ) ( In ( ion implantation ) ) ) ( , ( impurities ( ( are ( ( ( ( introduced ( into ( ( unprotected ares ) ( of ( ( the wafer ) ( at ( room temperature ) ) ) ) ) ) ) ( by ( ( accelerating ( dopant ions ) ) ( -LRB- ( ( atoms ( stripped ( of ( ( ( one or ) more ) ( of ( their electrons ) ) ) ) ) ) -RRB- ) ) ) ) ) ( to ( a ( high energy ) ) ) ) ( so ( they ( are ( ( ( driven ( into ( the wafer ) ) ) and ) ( become embedded ) ) ) ) ) ) ) . ) ) ) )
(ROOT (S (PP (NP (NNP Ion) (NNP implantation)) (IN In) (NP (NN ion) (NN implantation))) (, ,) (NP (NNS impurities)) (VP (VBP are) (VP (VBN introduced) (PP (IN into) (NP (NP (JJ unprotected) (NNS ares)) (PP (IN of) (NP (NP (DT the) (NN wafer)) (PP (IN at) (NP (NN room) (NN temperature))))))) (PP (IN by) (NP (NP (VBG accelerating) (NN dopant) (NNS ions)) (PRN (-LRB- -LRB-) (NP (NP (NNS atoms)) (VP (VBN stripped) (PP (IN of) (NP (NP (QP (CD one) (CC or) (JJR more))) (PP (IN of) (NP (PRP$ their) (NNS electrons))))))) (-RRB- -RRB-)))) (PP (TO to) (NP (DT a) (JJ high) (NN energy))) (SBAR (IN so) (S (NP (PRP they)) (VP (VBP are) (VP (VP (VBN driven) (PP (IN into) (NP (DT the) (NN wafer)))) (CC and) (VP (VBN become) (S (VP (VBN embedded)))))))))) (. .)))
Ion implantation In ion implantation, impurities are introduced into unprotected ares of the wafer at room temperature by accelerating dopant ions (atoms stripped of one or more of their electrons) to a high energy so they are driven into the wafer and become embedded.
(ROOT (S (SBAR (WHADVP (WRB When)) (S (NP (NNS electrons)) (VP (VBP move) (PP (IN from) (NP (CD one) (NN atom))) (PP (TO to) (NP (DT another)))))) (, ,) (NP (PRP they)) (VP (VBP become) (NP (NNS ions))) (. .)))