MEMS storage devices are new non-volatile secondary storages that have outstanding advantages over magnetic disks. MEMS storage devices, however, are much different from magnetic disks in the structure and access characteristics in the following ways. They have thousands of heads called probe tips and provide the following two major access facilities: (1) flexibility: freely selecting a set of probe tips for accessing data, (2) parallelism: simultaneously reading and writing data with the set of probe tips selected. Due to these characteristics, it is nontrivial to find data placements that fully utilize the capability of MEMS storage devices. In this paper, we propose a simple logical model called the Region-Sector (RS) model that abstracts major characteristics affecting data retrieval performance, such as flexibility and parallelism, from the physical MEMS storage model. We also suggest heuristic data placement strategies based on the RS model. To show the usability of the RS model, we derive new data placements for relational data and two-dimensional spatial data by using these strategies. Experimental results show that the proposed data placements improve the data retrieval performance by up to 4.7times for relational data and by up to 18.7times for two-dimensional spatial data of approximately 320Mbytes compared with those of existing data placements. Further, these improvements are expected to be more marked as the database size grows.
A channel-shaped structure is shown in which a channel-shaped met al carrier has a covering of flexible material which is arranged to define a gripping rib running along and protruding from one inside wall of the channel. Met al reinforcement at least partly extends into the gripping rib. Also disclosed is a met al carrier comprising a series of U-shaped met al elements which are spaced from each other and are each provided with a corrugation which runs around the U from the end of one leg of the U to the end of the other leg thereof. Flash memory is a type of electrically-erasable programmable read-only memory (EEPROM). Because flash memories are nonvolatile and relatively dense, they are now used to store files and other persistent objects in handheld computers, mobile phones, digital cameras, portable music players, and many other computer systems in which magnetic disks are inappropriate. Flash, like earlier EEPROM devices, suffers from two limitations. First, bits can only be cleared by erasing a large block of memory. Second, each block can only sustain a limited number of erasures, after which it can no longer reliably store data. Due to these limitations, sophisticated data structures and algorithms are required to effectively use flash memories. These algorithms and data structures support efficient not-in-place updates of data, reduce the number of erasures, and level the wear of the blocks in the device. This survey presents these algorithms and data structures, many of which have only been described in patents until now. 