Three Dimensional Integrated Circuits (3D IC) offer lower power consumption, higher performance, higher bandwidth, and scalability over the conventional two dimensional ICs. Through-Silicon Via (TSV) is one of the fabrication mechanisms that connects stacked dies to each other. The large size of TSVs and the proximity between them lead to undesirable coupling capacitance. This interference causes mutual influences between adjacent TSVs and produces crosstalk noise. Furthermore, this effect threats the reliability of data during traversal between layers. This paper proposes a mechanism that efficiently reduces crosstalk noise between TSVs with lower area overhead as compared to previous works. This mechanism revolves around the fact that retaining TSV value in current state can reduce coupling in some cases. To evaluate the mechanism, gem5 simulator is used for data extraction and several benchmarks are taken from the SPEC2006 suite. The simulation results show that the proposed mechanism reduces crosstalk noise with only 30 imposed TSV overhead while delay decreased up to 25.7 as compared to a recent related work.
 3D integration is one of the promising solutions to overcome the interconnect bottleneck with vertical interconnect through-silicon vias (TSVs). This paper investigates the crosstalk in 3D IC designs, especially the capacitive crosstalk in TSV interconnects. We propose a novel ω-LAT coding scheme to reduce the capacitive crosstalk and minimize the power consumption overhead in the TSV array. Combining with the Transition Signaling, the LAT coding scheme restricts the number of transitions in every transmission cycle to minimize the crosstalk and power consumption. Compared to other 3D crosstalk minimization coding schemes, the proposed coding can provide the same delay reduction with more affordable overhead. The performance and power analysis show that when ω is 4, the proposed LAT coding scheme can achieve 38 interconnect crosstalk delay reduction compared to the data transmission without coding. By reducing the value of ω, further reduction can be achieved1. Three-dimensional integrated circuit (3D IC) with through-silicon-via (TSV) is believed to offer new levels of efficiency, power, performance, and form-factor advantages over the conventional 2D IC. However, 3D IC involves disruptive manufacturing technologies compared to conventional 2D IC. TSVs cause significant thermomechanical stress that may seriously affect performance, leakage, and reliability of circuits. In this paper, we discuss an efficient and accurate full-chip thermomechanical stress and reliability analysis tool as well as a design optimization methodology to alleviate mechanical reliability issues in 3D ICs. First, we analyze detailed thermomechanical stress induced by TSVs in conjunction with various associated structures such as landing pad and dielectric liner. Then, we explore and validate the linear superposition principle of stress tensors and demonstrate the accuracy of this method against detailed finite element analysis (FEA) simulations. Next, we apply this linear superposition method to full-chip stress simulation and a reliability metric named the von Mises yield criterion. Finally, we propose a design optimization methodology to mitigate the mechanical reliability problems in 3D ICs. A reliable Three Dimensional Network-on-Chip (3D NoC) is required for future many-core systems. Through-silicon Via (TSV) is the prominent component of 3D NoC to support better performance and lower power consumption. Inductive TSV coupling has large disruptive effects on Signal Integrity (SI) and transmission delay. In this paper, TSV inductive coupling is analyzed based on technology process, TSV length, and TSV radius for a range of frequencies. A classification of inductive coupling voltage is presented for different TSV configurations. A novel coding technique is devised to mitigate the inductive coupling effects by adjusting the current flow pattern. Simulations for a 4×8 TSV matrix show 23 coupled voltage mitigation, imposing 12.5 information redundancy. 3D IC is a promising technology to meet the demands of high throughput, high scalability, and low power consumption for future generation integrated circuits. One way to implement the 3D IC is to interconnect layers of two-dimensional (2D) IC with Through-Silicon Via (TSV), which shortens the signal lengths. Unfortunately, while TSVs are bundled together as a cluster, the crosstalk coupling noise may lead to transmission errors. As a result, the working frequency of TSVs has to be lowered to avoid the errors, leading to narrower bandwidth that TSVs can provide. In this paper, we first derive the crosstalk noise model from the perspective of 3D chip and then propose ShieldUS, a runtime data-to-TSVs remapping strategy. With ShieldUS, the transition patterns of data over TSVs are observed at runtime, and relatively stable bits will be mapped to the TSVs which act as shields to protect the other bits which have more fluctuations. We evaluate the performance of ShieldUS with address lines from real benchmark traces and data lines of different similarities. The results show that ShieldUS is accurate and flexible. We further study dynamic shielding and our design of Interval Equilibration Unit (IEU) can intelligently select suitable parameters for dynamic shielding, which makes dynamic shielding practical and does not need to predefine parameters. This also improves the practicability of ShieldUS. In this paper, the reliability of through-silicon via (TSV) daisy chains under thermal cycling conditions was examined. The electrical resistance of TSV daisy chains was found to increase with the number of thermal cycles, due to thermally induced damage leading to the formation and growth of defects. The contributions of each identified damage type to the change in the electrical resistance of the TSV chain were evaluated by electrical modeling. Thermo-mechanical modeling showed a good correlation between the observed damage locations and the simulated stress-concentration regions of the TSV. Recently, the development of three-dimensional large-scale integration (3D-LSI) has been accelerated. Its stage has changed from the research level or limited production level to the investigation level with a view to mass production. The 3D-LSI using through-silicon via (TSV) has the simplest structure and is expected to realize a high-performance, high-functionality, and high-density LSI cube. This paper describes the current and future 3D-LSI technologies with TSV. In 3D VLSI, through-silicon vias (TSVs) are relatively large, and closely spaced. This results in a situation in which noise on one or more TSVs may deteriorate the delay and signal integrity of neighboring TSVs. In this paper, we first quantify the parasitics in contemporary TSVs, and then come up with a classification of crosstalk sequences as OC, 1C,... 8C sequences. Next, we present inductive approaches to quantify the exact overhead for 8C, 6C and 4C crosstalk avoidance codes (CACs) for a 3 x n mesh arrangement of TSVs. These overheads for different CACs for a 3 x n mesh arrangement of TSVs are used to calculate the lower bounds on the corresponding overheads for an n x n mesh arrangements of TSVs. We also discuss an efficient way to implement the coding and decoding (CODEC) circuitry for limiting the maximum crosstalk to 6C. Our experimental results show that for a TSV mesh arrangement driven by inverters implemented in a 22nm technology, the coding based approaches yields improvements which are in line with the theoretical predictions.