text:
Freddie and Mary – Ivor Novello Awards 1987 | Queen Photos
Freddie and Mary – Ivor Novello Awards 1987	Posted by Kacio on 26/01/2014
Posted in: Photos.	Tagged: 1987, 80's, Freddie Mercury, Freddie with Mary, Ivor Novello Awards 1987, Mary Austin, Photo, Photos.	Leave a comment
← Freddie in 1986	The Great Pretender (1987) →	Leave a Reply Cancel reply	Enter your comment here...


text:
miniafv: October 2017
Ayhan has done this model before. :http://miniafv....renault-ft-17-light.html
But he wanted to build one more .. Very nice work and a master model ..
Thanks Ayhan, continue please,
PS : click please for the kit inbox preview:http://miniafv.....172-renault-ft-17-light.html
The following photos taken at the 10th FNSS PlasticBattle Armor Modeling Show 2017.( http://miniafv...-fnss-plasticbattle-armor-modeling.html)
Posted by Erhntly at 9:19 PM
Labels: Ayhan Toplu, FlyhawkModel, French, FT-17, Renault, WW1

type: global

value: Blogger is an American online content management system (CMS) which enables multi-user blogs with time-stamped entries. Pyra Labs developed it before being acquired by Google in 2003.


text:
Burger King - Menu, Hours & Prices - 1180 Boul Duplessis, Sainte-foy, QC
418-877-2960Primary
https://locations.burgerking.ca/qc/sainte-foy/1180-boul-duplessis.html
https://www.facebook.com/BurgerKingCanada1180BoulDuplessis/
1180 Boul Duplessis, Sainte-foy, QC G2G 2B5 Get directions »
There's a Burger King® restaurant near you at 1180 Boul Duplessis. Visit us or call for more information. Every day, more than 11 million guests visit over 13,000 Burger King® restaurants near them in 97 countries around the world. And they do so because our fast food restaurants are known for serving high-quality, great-tasting and affordable food. The Burger King® restaurant in Sainte-foy, QC serves burgers, breakfast, lunch and dinner prepared your way. The original HOME OF THE WHOPPER®, our commitment to quality ingredients, signature recipes, iconic sandwiches like the flame-grilled WHOPPER® Sandwich and fast, family-friendly dining experiences in a welcoming environment is what has defined our brand for more than 50 successful years. more... See more text
1180 Boul Duplessis, Sainte-foy, QC G2G 2B5

value: The yellow pages are telephone directories of businesses, organized by category rather than alphabetically by business name, in which advertising is sold. The directories were originally printed on yellow paper, as opposed to white pages for non-commercial listings.


text:
Alicia's Eagle Rock Lodge - Hotel Reviews, Deals - Kenai, AK - TripAdvisor
Alicia's Eagle Rock Lodge Hotel Reviews, Kenai
TripAdvisor is proud to partner with Travelocity and Orbitz so you can book your Alicia's Eagle Rock Lodge reservations with confidence. We help millions of travellers each month to find the perfect hotel for both holiday and business trips, always with the best discounts and special offers.
view.atdmt.com/IWC/view/364417226/direct/01/?ord=1369526457161
ad.doubleclick.net/ad/N4764.TripAdvisor/B7050133.2;sz=1x1?ord=1369526457161
bs.serving-sys.com/BurstingPipe/adServer.bs?cn=tf&c=19&mc=imp&pli=6438451&PluID=0&rtu=-1∨d=1369526457161
ad.doubleclick.net/ad/N4764.TripAdvisor/B7227862.10;sz=1x1?ord=1369526457161
altfarm.mediaplex.com/ad/tr/21191-168518-43664-1?mpt=∨d=1369526457161
ad.doubleclick.net/ad/N4764.TripAdvisor/B7330677.2;sz=1x1?ord=1369526457161
Free Guide to Kenai Get your guide to the top local hotels, restaurants and things to do Alicia's Eagle Rock Lodge Photos (5 traveller photos) Hotels around Kenai
Sleepy Hollow Inn in Huntington
76 Mall in Branson

value: Tripadvisor, Inc. is an American online travel company that operates a website and mobile app with user-generated content and a comparison shopping website.


text: More LinksSummaryHistorical PricesInteractive ChartHeadlinesMarket PulseCompetitorsKey StatisticsInsider TransactionsIncome StatementBalance SheetCashflowTechnical Analysis Top Stories A $1 million bet: Anatomy of a high-end house flip Dow breaks below 18K, as China, Fed fears weigh Billionaires had a rough year in 2015 - relatively Goldman launches lending platform for Main St. Why stock prices will get even more expensive Jobless claims remain at 43-year low 214.94+0.96(+0.45%)10:25 AMEDT

value: Yahoo (, styled as yahoo!) is an American web services provider. It is headquartered in Sunnyvale, California and operated by the namesake Yahoo!


text:
Stephen Leather A Dan Shepherd Mystery 12... £69.99
Stephen Leather 4 Books Collection Set Li... £29.99
Hannibal, Thomas Harris, Good Book £1.98
HAKAN NESSER - The Weeping Girl SIGNED... £26.00
NEVIL SHUTE.THE RAINBOW AND THE... £8.95
Time of Death (Tom Thorne Novels),... £4.79
The Mermaids Singing - Val McDermid -... £2.99
Point Of Origin - Patricia Cornwell - Time Warn... £2.49
Killer Heat, Linda Fairstein £2.81
Alexandria by Lindsey Davis - CD Audiobook... £17.49
The Bazaar of Bad Dreams by Stephen... £7.00
Under Siege, Stephen Coonts £2.81
GARDNER , ERLE S Perry Mason TCOT... £159.00
Peter Swanson: The Girl With A Clock For A Hea... £32.99
Call After Midnight - Tess Gerritsen - Mira... £2.69
Broken Harbour by Tana French - 1st... £4.99
Finders Keepers, King, Stephen, Very Good... £8.82
'Gone Girl' Paperback Novel Gillian Flynn Ve... £2.49
Shatter the Bones (Logan McRae, Book 7... £6.05

value: eBay Inc. ( EE-bay) is an American multinational e-commerce corporation based in San Jose, California, that facilitates consumer-to-consumer and business-to-consumer sales through its website.


text:
Crockpot Italian Chicken: 4 chicken breasts, 1 packet Zes… | Pinterest
from The Kitchn Chili with Pasta and Cheddar
They say the sense of smell is the biggest memory trigger, but I have to argue that the sense of taste is right up there. I present you with this evidence: the 1998 Super Bowl, my parent's living room, an oversized cheese head (yes, a hat constructed of foam cheese), and a bowl of steaming chili, heaped with a generous dusting of sharp Wisconsin cheddar.
You can make your own pie crusts and chop up your own fresh veggies… or decide to make it a very quick weeknight meal by using pre-made refrigerated pie crusts with a bag of frozen vegetables.
from Real Simple Cheddar Chicken
Cheddar Chicken--the first time I made this for my family, they went crazy, It has been a favorite ever since and I have given the recipe out over and over; goes great with the cilantro rice here on my board also.
Easy to make and full of cheesy goodness, this Baked Cheddar Chicken recipe will easily become a regular favorite.
Chicken, Jalapeno & Cheddar Casserole. Family was home this weekend and Pinterest recipes were on the menu. I made this delicious chicken recipe from the blog, Kayotic Kitchen and without my tweaking, I'd still give it a 5-star rating. It's time-easy to make!
Chicken, cheddar, bacon, pasta
What do you think breanne?? Breanne Gilbert
Sounds good! Its like the hamburger helper kinda
never seen that, is it good??
looks really greasy
It doesn't look greasy it looks gooey cheesy lol

value: Pinterest is an American image sharing and social media service designed to enable saving and discovery of information (specifically "ideas") on the internet using images and, on a smaller scale, animated GIFs and videos, in the form of pinboards. The site was created by Ben Silbermann, Paul Sciarra, and Evan Sharp and had over 478 million global monthly active users as of March 2021.


text:
sloansuburg: Lately
Lately, Abe's favorite thing to do is build forts.I don't know about you, but this random photo from the internet is my idea of a fort.This is Abe's. It's every blanket and pillow that he can physically get his hands on mixed with his favorite toys at the moment {currently Noah's Ark, Judah's Bumbo, and every toy from our living room toy basket.}And then he just piles it all on the couch. ----------------------------Lately, this is how the toilet paper in the boy's bathroom always looks. It's Ben's idea of how to perfectly spend 13 seconds! --------------------------Lately, this boy of ours has started looking {and acting}awfully ONE! ---------------------------Lately, in reading this book, I have been awestruck by just how generous and inexhaustible God's grace really is.What's been up with you lately?
Ohhh Sarah ~ did this ever take me back to my days with 4 sons. I absolutely loved it. Only difference is I had them all over the house, with one trying to out fort the other ;) Enjoy these days they are a treasure. Our love from the Brooks' Family to the Sloan family and a very Merry Blessed Christmas. Love you guys, Aunt Teresa
Your blog pretty well sums it up in the life of three little (boys) ones! Way to hang in there mom and still keep smiling and blogging! Can't wait to see you in a week. Abie will be able to put up and take down his fort in about five seconds after X-mas!!Love you much,Mom
I guess beauty is in the eyes of the beholder (fort-builder).Merry Christmas to the Sloans.Love you bunches.


text:
cheiro urgia: At the sea
What could be better than a day or two at the seaside, especially in this hot summer time?
In my last crafting projects, I decided to revive a stitching pattern that I've used two years ago. The maritime card with a sailboat and lots of bling meant quite a lot of work back then, but when it was done it was all worth it.
Last week, I decided to stitch the boat again. However, I wanted to avoid creating an exact copy of my last card - even though I've used exactly the same yarns. Therefore, obviously, the details would have to make the difference.
I picked more flowers than last time, focusing on light blue, cream and even green shades. Additionally, I searched through my stash of pearls and gemstones for something suitable.
When the stitching was done, I coloured the seaside motif with coloured pencils.
Then, I arranged the flowers on a blank card, just to imagine how it would all look like in the end.
And while blossoms would cover two corners of my card, I decided to leave the other two empty, except for a shimmering snail shell underneath the waves.
When it came to the background paper however, I soon realized I had nothing in my stash that would fit to the dominating pastel shades. After trying everything from maritime themed papers, to fantasy prints with a touch of flowers, the one last thing I had in mind was everything but maritime/summer themed: a bunch of blue, beige and silver Christmas papers.
And somewhere among snowflakes and winter trees, I found a light blue paper with tiny silver sprinkles that would bo fine to the image itself, and to the embellishments as well.
Once the paper taks was done, I could finally glue everything together and set my fantasy free while adding blue and white pearls of different sizes. I even added some silver gems and stars from a collection of Christmas embellishments.
A little contribution to the August gallery of Create in Austria - artwork created by Austrians and/or in Austria.
As we have just entered August, this card should also be an invitation to our newest Fadengrafik Challenge. We have an "ATG" theme this month, meaning you make link up any of your projects given they have some kind of paper embroidery on them.
In need for more maritime feeling? Always good for a short break: lovely little Piran.
- creative moments: Summer
- scrapping4fun: bon voyage/vacation
- worldwide open DT challenge: ATG
Posted by cheiro urgia at 16:56
Andrea Norris 02 August, 2017 00:21
Gorgeous and sparkly with lots of details. I love the soft colours <3
Thanks for joining us at Fussy & Fancy Fridays this time
Elizabeth Hart 02 August, 2017 04:58
Your card is just gorgeous - I LOVE the stitching detail and it really add so much tot he card. Thanks so much for joining us this time at the Craftyhazelnut's Patterned Paper Challenge, Elizabeth (DT)
Brenda 02 August, 2017 07:16
Wonderful card, the stitching is amazing. Your photo are wonderful also. Thanks so much for playing along with us at CRAFT Challenge this week!
Janette 02 August, 2017 11:38
Beautiful card, very pretty work....Thankyou for sharing it with us at CraftyCatz this week.x
Hazel 02 August, 2017 14:23
Thank you for sharing your lovely crafting for our August challenge 13 at Love to Craft, Hazel, DT - thank you also for entering this for my Patterned Paper August challenge. x
Silvis Kreativstube 02 August, 2017 17:54
eine sehr schöne Karte hast du gestaltet. Sie gefällt mir sehr gut. Vielen Dank für die Teilnahme an der Friendship Challenge. Wunderschöne Bilder zeigst du hier. Vielen Dank. Ganz liebe Grüße herzlichst Silvi
The Crafty Bat 02 August, 2017 18:50
Aunty Sue 02 August, 2017 22:12
fab card and love the pictures and thanks for sharing at Craft this week
Carrie Williams 03 August, 2017 16:26
So soft and pretty! Thanks for joining in the Scrapping4Fun Challenge! Good luck, and see you next round :)
Shylaa Shree 04 August, 2017 07:05
very inspiring and beautifully stitched. A great card.Thanks for playing along with at Brown Sugar Challenge Blog. Hope to see you again
Miapuh 05 August, 2017 01:45
Wynn Walton 05 August, 2017 17:12
Stunning card. I love everything about . The background you've created and the beautiful stitching. Perfect!! I love the inspirational pictures too. Is this where you live? Thank you fro sharing it with us at OLL challenges Wynn DT
Scrapping4funChallenges 05 August, 2017 19:42
Lovely card, beautiful picture
Annette Stapylton 06 August, 2017 01:57
Tedjo Musyanti 06 August, 2017 12:13
Shabby Chic Paper Crafts 07 August, 2017 14:18
Beautiful card- love the ship. Thank you for sharing with us over here at World Wide Open Design Team Challenge and best of luck with your entry.
Linby 08 August, 2017 11:04
Love your design, your stitching is so neat. Thank you for sharing the beautiful photos of Piran, I would love to visit one day.
agraffkowe 12 August, 2017 10:55
phann son 15 August, 2017 04:09
samanthadesigns 04 September, 2017 21:36
Such a beautiful card! So glad I took a closer look. The photos are beautiful as well.


text:
Emilia Delia: Men In The USA Are More Often Hospitalised Than Women
Meanwhile, the researchers found a 60 percent higher jeopardy middle men for salubriousness care-associated bloodstream infections as well as for surgical-site infections. Biological differences between men and women's flay may gamble a job in men's increased imperil for infection.
Previous studies have shown there are more bacteria dole out at the insertion site of a main venous catheter on men than women. These gender differences were less patent in children younger than 12 and colonize older than 70, the scan found skin care 50th and france. "In addition to using enhanced infection gamble profiles to improve infection rates, it may be sound to conduct specialized preoperative strip decontamination procedures and postoperative wound responsibility for men to further reduce the risk of infection," Cohen concluded.


text:
Katherine Vrana-Sferry on Pinterest
Katherine Vrana-Sferry
24 Boards 4,079 Pins 539 Likes 120 Followers 177 Following Pin it
from Hative DIY Ideas With Milk Crates or Wooden Crates
from Teachers Pay Teachers Discipline/Behavior Plan for Upper Elementary Grades - Editable Pages
Might be necessary to check this out this year!!
These ideas are fabulous! So many teacher ideas, all for fifth graders!
Punta Rata Beach in Brela, Croatia. Photo: Makarska Riviera Beaches #croatia #brela
Plitvice National Park, Croatia:)


text:
Scrubs - Walmart.com Skip To Primary Content Skip To Department Navigation Menu Toggle Search Walmart. Save Money. Live Better. Walmart. Save Money. Live Better. All All Departments Auto & Tires Baby Beauty Books Cell Phones Clothing Electronics Food Gifts & Registry Health Home Home Improvement Household Essentials Jewelry Movies Music Office Party & Occasions Patio & Garden Pets Pharmacy Photo Center Sports & Outdoors Toys Video Games Clear search field Search Hello, Hello. Sign In My Account Track My Order My Account Savings Catcher Compare prices and save Pharmacy Account Manage your prescriptions VUDU Library Unlimited access to thousands of movies and TV shows Sign Out Sign In View my account Create an Account Get more out of Walmart.com Items in cart Hello. Sign In Main Menu All Departments Back to College Electronics & Office Shop Electronics TV & Video Shop all TVs DVD & Blu-ray Players Home Audio & Theater Cell Phones Shop all No-Contract Phones Unlocked Phones Prepaid Minutes & Data Straight Talk Home Automation Wearable Tech Cut the Cable iPad & Tablets Shop all iPad Windows Tablets Android Tablets Accessories Computers Shop all Laptops Desktops Printers & Supplies Networking Software Monitors Accessories Auto Electronics Shop all GPS & Navigation Video Games Shop all Value bundles Cameras & Camcorders Portable Audio Shop all iPod & MP3 Players Headphones Speakers & Docks Office Shop all Furniture Office Electronics Office Supplies School Supplies Tips & Advice Movies, Music & Books Movies & TV Shop all Action & adventure Blu-ray discs Boxed sets Children & family Classic movies Instawatch Movie DVDs New releases Preorders TV shows Video on Demand by VUDU Watch trailers Teenage Mutant Ninja Turtles Music Shop all Collections & boxed sets Country music Music DVDs Musical instruments New releases Pop Preorders R&B / Soul Rock Top 100 CDs Vinyl Books Shop all Adult coloring books Children's & teen books Classic books Harry Potter Journals New releases Preorders Romance books Textbooks Top 200 sellers Captain America Batman v Superman Star Wars Home, Furniture & Patio Shop All Home Better Homes and Gardens Pioneer Woman Bath Bedding Shop all Bedding Sets Basic Bedding Kids' Bedding Teen Bedding Home Decor Shop all Curtains & Blinds Lighting Rugs Furniture Shop all Bedroom Dining Room Kids' Furniture Living Room Mattresses Office TV Stands Kitchen & Dining Shop all Cookware, Bakeware & Tools Dining & Entertaining Kitchen Appliances Kitchen Storage Vacuums & Floor Care Patio & Garden Shop all Gardening & Lawn Care Grills & Outdoor Cooking Patio Furniture Patio & Outdoor Decor Storage & Organization Appliances Luggage Featured Shops Shop all Personalized Gifts Kids' Rooms Teen Rooms Wedding Registry Style Tips & Ideas Home Improvement Shop All Home Improvement Tools Shop all Power Tools Hand Tools All Tool Sets Generators Garage Storage Shop all Free Standing Shelves Garage Cabinets Baskets & Bins Garage Door Openers Bathroom Renovations Kitchen Renovations Heating & Cooling Shop all Air Conditioners Portable Fans Ceiling Fans Dehumidifiers Air Quality Water Purification Light Bulbs Paint Shop all Wallpaper Patio & Garden Shop all Patio Collections Lawn Mowers Power Equipment Gardening & Lawn Shop all Gardening Landscaping Sheds & Outdoor Storage Grills & Outdoor Cooking Garden & Patio Tips & Ideas Home Safety Shop all Home Automation Hardware Clothing, Shoes & Jewelry Shop All Clothing Swim Shop Activewear Shop Men's Men's Big & Tall Young Men's Men's Shoes Men's Accessories Shop all Underwear Socks Sleepwear Sports Fan Shop Women's Women's Plus Juniors Intimates & Sleepwear Maternity Women's Shoes Handbags Jewelry Shop all Personalized Jewelry Wedding Rings Watches Fashion Jewelry Fine Jewelry Girls (4-20) Boys (4-20) Baby & Kids' Shoes Baby & Toddler Shop all Baby Girls (0-24M) Baby Boys (0-24M) Toddler Girls (2-5T) Toddler Boys (2-5T) School Uniforms Backpacks Bags & Accessories Shoes Clearance & More Baby & Toddler Shop All Baby Best Sellers Nursery & Decor Shop all Furniture Bedding Decor Nursery Collections Toddlers' Rooms Shop all Beds Bedding Activities & Toys Shop all Learning Toys Ages 0-12 Months Ages 12-24 Months $30 off Select Gear Gear Shop all Strollers Car Seats Playards Swings Diapering Shop all Diapers Wipes Feeding Shop all Baby Formula Baby Food Breast Feeding Bottle Feeding High Chairs & Boosters Clothing Shop all Baby Girls (0-24M) Baby Boys (0-24M) Toddler Girls (2-5T) Toddler Boys (2-5T) Shoes Shop all Boys Girls Health & Safety Shop all Baby Gates Baby Monitors Parenting & Family Books Savings Showcase Baby Registry Toys & Video Games New Toys Shop All Toys Shop all Dolls & Dollhouses LEGO & Building Sets Action Figures Cars, Trains, & Remote Control NERF & Blasters Pretend Play Arts & Crafts Games & Puzzles Musical Instruments Preschool Toys Shop all Learning Toys Splastastic Rollbacks Outdoor Play Shop all Swimming Pools Swing Sets Trampolines Waterslides Bikes & Ride-Ons Shop all Kids' Bikes Ride-On Toys Scooters Boys' Toys Girls' Toys Toy Tips & Trends Video Games Shop all Accessories Bundles New releases Nintendo 3DS / 2DS Nintendo Wii U / Wii PC & digital gaming PlayStation 3 PlayStation 4 Preorders Used games Xbox One Xbox 360 Savings Showcase Gaming tips Food, Household & Pets Shop All Food Grocery Pickup & Delivery Snacks & Cookies Coffee Beverages Breakfast & Cereal Baking Candy & Gum Meals & Pasta Shop all Condiments & Spices Shop All Pets Shop all Pet Food Dogs Cats Fish Birds Small Animals Pets Tips & Advice Food Shops Shop all Emergency Food Fresh Food Frozen Food Organic Gluten Free Food Gifts Household Essentials Shop all Laundry Room Kitchen Bathroom Paper & Plastic Cleaning Supplies Batteries Pest Control AS SEEN ON TV Recipes & Tips Health, Beauty & Pharmacy Beauty Shop all Bath & Body Fragrances Hair Care Makeup Massage & Spa Men's Grooming Shaving Skin Care Sun Care Subscribe to Beauty Box Beauty Tips Shop all Hair care advice Makeup trends & tutorials Health Shop all Diet & Nutrition Home Health Care Medicine Cabinet Oral Care Personal Care Sports Nutrition Energy & Endurance Vision Vitamins Diabetes Shop Wellness Tips & Advice Shop all All About Vitamins Diet & Exercise Tips Vitamin Selector tool Pharmacy Shop all Refill Prescriptions Transfer Prescriptions History & Reports Family Account Management Pharmacy Mobile App $4 Prescriptions Home Delivery Health Insurance Funeral Vision Center Shop all Contact Lenses Prescription Eyewear Sports, Fitness & Outdoors Shop All Sports Camping Shop all Tents Canopies, Gazebo's & Shelters Coolers Sleeping Bags Airbeds Fishing & Marine Shop all Rods Reels Rod & Reel Combo's Marine Accessories Boats & Water Sports Hunting & Shooting Shop all Gun Safes & Storage Game & Trail Cameras Tree Stands & Blinds Optics & Binoculars Archery Hunting Apparel Team Sports Shop all Baseball Softball Basketball Football Golf Bikes Exercise & Fitness Shop all Exercise Machines Treadmills Exercise Bikes Ellipticals Strength & Weight Training Fitness Accessories Recreation Trampolines Game Room Shop all Multi-Game Tables Air Hockey Fanshop Auto & Tires Auto & Tires Auto Parts Shop all Oil Filters Air Filters Car Lighting Auto Body Tools Shop all Auto Repair Tools Motor Oil & Lubricants Shop all Antifreeze & Coolants Motor Oil RV Motorcycle & ATV Car Safety & Security Shop all Anti-Theft Devices Tires Tire Finder Batteries & Accessories Shop all Car Batteries Car Battery Chargers & Accessories Auto Electronics Shop all In-Dash Stereos Auto Services Auto Tips & Advice Auto Detailing & Car Care Shop all Car Washes & Cleaners Car Wax & Polish Cleaning Tools Detailing Kits Pressure Washers Exterior Car Accessories Shop all Cargo Management Exterior Car Decoration Interior Car Accessories Shop all Floor Mats Seat Covers Photo, Gifts & Personalized Shop Photo Shop all Available Same Day Blankets Calendars Canvas & Wall Art Cards & Invitations Home Décor Mugs Office Phone Cases Photo Books Posters Prints Gift Registry Shop all Baby Registry Wedding Registry Lists Shop Photo Cards By Occasion Shop all Baby Birthday Father's Day Thank You Wedding As Seen On TV Food Gift Baskets 3D Printers Gift Cards Shop all Mail a Gift Card Email a Gift Card Specialty Gift Cards Check Card Balances Corporate Gift Card Program Personalized Gifts Shop all For Him For Her For Baby For Kids For the Couple Personalized Jewelry Crafts & Party Supplies Crafts Shop all Sewing Fabric Scrapbooking Supplies Art Supplies Beading & Jewelry Kids' Crafts Craft Storage Artificial Plants & Flowers Patterns Albums Stamping & Embossing Yarn Craft Tips & Ideas Party & Occasions Shop all Baking & Pastry Supplies Costumes Disposable Tableware Giftwrap & Supplies Party Decorations Party Favors Stationery & Invitations Party Ideas & Recipes Gift Cards Shop by Party Theme Holidays & Events Shop all Patriotic party Luau party Baby shower Birthday supplies Wedding Shop Create Personalized Banners Personalized Invitations & Cards See All Departments See moreless Savings Showcase My Local Store Pick it up TODAY Tips & Ideas ShippingPass - FREE unlimited 2-day shipping FREE Walmart Grocery pickup Learn how to save 10%, up to $25 FREE shipping on $50+ orders FREE store pickup as soon as today Previous Next
Compute- app-4983792-1-50863108, DC- prod-dal1, ENV- prod-a, Ver- 42.0.0, SHA- 150259f06c4ed954c6993e8ecdd5149f54104a8d, Log- d5c5feaa-21e4-15581fe7008000 Site Information Be the first to save! Email Address Sign up Privacy policy Stay connected Mobile apps Help Feedback MoneyCenter Privacy & Security CA Privacy Rights Terms of Use Financial Services Walmart MoneyCenter Walmart Credit Card Apply Now Manage Card Account Product Care Plans Walmart Pay Get to Know Us About Walmart.com Corporate Suppliers Marketplace Careers @Walmartlabs Walmart.com Terms of Use About Our Ads Affiliate Program CA Privacy Rights Privacy & Security Customer Service Returns Policy Product Recalls Int'l Customers Tax Exempt Program Contact Us Feedback Store Pickup In the Spotlight Expand Baby Cribs Strollers Diapers Baby Feeding Car Seats Expand Electronics Cut the Cable Computers TVs iPad & Tablets Expand Fitness Exercise Machines Vitamins Ellipticals Treadmills Fitbit Expand Keep Cool Air Conditioners Fans Swimming Pools Pool Toys Expand International Sites Argentina Brazil Canada Chile China Japan Mexico United Kingdom © Walmart Stores, Inc. To ensure we’re able to help you as best we can, please include your reference number: Ref:

value: Walmart Inc. ( ; formerly Wal-Mart Stores, Inc.) is an American multinational retail corporation that operates a chain of hypermarkets (also called supercenters), discount department stores, and grocery stores from the United States, headquartered in Bentonville, Arkansas.


text:
The Lords Prayer Pendant Cross Charms Antique Silver Tone 28
Lords Prayer Cross Pendant Charm
Round Pendant Has A Dangle Cross In The Center
1 Single Charm
25 x 16 mm The Center Cross
Combined Worldwide Flat Rate Shipping
I Ship Next Day, I do Not Ship On Weekends or Holidays,
Purchases Made On These Days Will Be Shipped Next Business Day.
www.etsy.com/shop/FindingsKeepers/search?search_query=cross+charms∨der=date_desc&view_type=gallery&ref=shop_search
www.etsy.com/shop/FindingsKeepers/search?search_query=christian∨der=date_desc&view_type=gallery&ref=shop_search
The charms are very detailed! Quality of these products are great!:)
1 Cross Charm Antique Gold Tone 15 x 9 mm - cg261
3 Forever Cross Charms, 36 x 10 mm Antique Bronze Tone bz431
1 I Love Jesus Charm 16 x 13 mm Gold Plated sc569
3 Cross Charms, Antique Silver Tone 17 x 9 mm ts1264
16 Silver Cross Charms 11 x 6 mm - ts1221
12 Cross charms antique bronze tone BC191
lords prayer charms

value: Etsy, Inc. is an American e-commerce company focused on handmade or vintage items and craft supplies.


text:
(Redirected from United States House of Representatives elections in Minnesota, 1916)
Retrieved from "https://en.wikipedia.org/w/index.php?title=1916_United_States_House_of_Representatives_elections&oldid=908133034#Minnesota"

value: Wikipedia ( (listen) wik-ih-PEE-dee-ə or  (listen) wik-ee-) is a free content, multilingual online encyclopedia written and maintained by a community of volunteers through a model of open collaboration, using a wiki-based editing system. Individual contributors, also called editors, are known as Wikipedians.


text:
Patent US5452248 - Method of operating a nonvolatile semiconductor memory device - Google PatentsSearch Images Maps Play YouTube News Gmail Drive More »Sign inAdvanced Patent SearchPatentsIn this invention, charges are extracted from the charge storage portion by means of F-N tunnel current, and then avalanche hot carriers are injected into the storage portion....http://www.google.com/patents/US5452248?utm_source=gb-gplus-sharePatent US5452248 - Method of operating a nonvolatile semiconductor memory deviceAdvanced Patent SearchPublication numberUS5452248 APublication typeGrantApplication numberUS 07/903,949Publication dateSep 19, 1995Filing dateJun 26, 1992Priority dateJun 27, 1991Fee statusPaidAlso published asDE69217738D1, DE69217738T2, EP0520505A2, EP0520505A3, EP0520505B1, US5623445, US5751636Publication number07903949, 903949, US 5452248 A, US 5452248A, US-A-5452248, US5452248 A, US5452248AInventorsKiyomi Naruke, Tomoko Suzuki, Seiji Yamada, Etsushi Obi, Masamitsu OshikiriOriginal AssigneeKabushiki Kaisha ToshibaExport CitationBiBTeX, EndNote, RefManPatent Citations (10), Non-Patent Citations (6), Referenced by (18), Classifications (21), Legal Events (4) External Links: USPTO, USPTO Assignment, EspacenetMethod of operating a nonvolatile semiconductor memory device
US 5452248 AAbstract
1. A method of operating a nonvolatile semiconductor memory device including a semiconductor substrate of a first conductivity type having source and drain regions of a second conductivity type which define a channel region therebetween, a gate insulator provided on said channel region, electron-holding means provided on said gate insulator, and a control gate insulatively spaced from said electron-holding means, said method comprising the steps of:discharging electrons held in said electron-holding means by applying a voltage between said control gate and one of said source region, said drain region, and said substrate, so that at least one of said source region, said drain region, and said substrate has a potential greater than the potential of said control gate; and then injecting avalanche hot carriers into said electron-holding means in order to converge the potential of said electron-holding means to a predetermined value by applying a voltage between said source region and said drain region so that one of said drain region and said source region is at a higher potential, while simultaneously applying a voltage of 0 volts to said control gate. 2. The method according to claim 1, wherein said channel region, when said control gate is applied with 0 volts, carries channel current smaller than that flowing when said control gate is applied with a reading voltage.
3. The method according to claim 2, wherein said avalanche hot carriers are induced by the channel current flowing when said control gate applied with 0 volts.
4. The method according to claim 3, wherein said electron-holding means comprises a floating gate, and said gate insulator comprises an insulating film, and the electrons held in said electron-holding means are discharged into said one of said source region, said drain region and said substrate by applying a voltage between said control gate and said one of said source region, said drain region and said substrate so that said one of said source, said drain region and said substrate region is at a higher potential, to allow F-N tunnel current to flow through said insulating film between said floating gate and said one of said source region, said drain region and said substrate.
5. The method according to claim 4, wherein said avalanche hot carriers include avalanche hot electrons and avalanche hot holes, and said floating gate has a balanced potential at which the amount of said avalanche hot electrons injected into said floating gate balances with the amount of said avalanche hot holes injected into said floating gate, and when the potential of said floating gate after the discharge of said electrons into said one of said source region, said drain region and said substrate is more positive than said balanced potential, more of said avalanche hot electrons than said avalanche hot holes are injected into said floating gate, whereas when the potential of said floating gate is more negative than said balanced potential, more of said avalanche hot holes than said avalanche hot electrons are injected into said floating gate.
6. The method according to claim 5, wherein said electrons are discharged into said one of said source region, said drain region and said substrate so that the potential of said floating gate may be more positive than said balanced potential, to suppress the injection of said avalanche hot holes into said floating gate.
7. The method according to claim 6, wherein an impurity concentration of said channel region is increased thereby inhibiting a threshold voltage decreasing due to the assistance of the potential of said floating gate when the potential of said floating gate is set at positive value close to said balanced potential after said discharge of electrons.
8. A method of erasing and programming a nonvolatile semiconductor memory device, said nonvolatile semiconductor memory device including a semiconductor substrate of a first conductivity type having source and drain regions of a second conductivity type which define a channel region therebetween, a gate insulator provided on said channel region, electron-holding means provided on said gate insulator, and a control gate insulatively spaced from said electron-holding means, said method comprising the steps of:discharging electrons held in said electron-holding means to erase data from said device by applying a voltage between said control gate and one of said source region, said drain region, and said substrate so that at least one of said source region, said drain region, and said substrate has a potential greater than the potential of said control gate; and then injecting avalanche hot carriers into said electron-holding means to converge the potential of said electron-holding means to a predetermined value by applying a voltage between said source region and said drain region so that said source region is at a higher potential than said drain region, while simultaneously applying a voltage of 0 volts to said control gate; and then injecting electrons into said electron-holding means to program data into said device by applying a voltage between said source region and said drain region so that said drain region is at a higher potential, while simultaneously applying a voltage higher than a reading voltage to said control gate. 9. The method according to claim 8, wherein said channel region, when said control gate is applied with 0 volts, carries channel current smaller than that flowing when said control gate is applied with the reading voltage.
10. The method according to claim 9, wherein said avalanche hot carriers are induced by the channel current flowing when said control gate is applied with 0 volts.
11. The method according to claim 10, wherein said electron-holding means comprises a floating gate, and said gate insulator comprises an insulating film, and the electrons held in said electron-holding means are discharged into said one of said source region, said drain region and said substrate by applying a voltage between said control gate and said one of said source region, said drain region and said substrate so that said one of said source region, said drain region and said substrate region is at a higher potential, to allow F-N tunnel current to flow through said insulating film between said floating gate and said one of said source region, said drain region and said substrate.
12. The method according to claim 11, wherein said avalanche hot carriers include avalanche hot electrons and avalanche hot holes, and said floating gate has a balanced potential at which the amount of said avalanche hot electrons injected into said floating gate balances with the amount of said avalanche hot holes injected into said floating gate, and when the potential of said floating gate after the discharge of said electrons into said one of said source region, said drain region and said substrate is more positive than said balanced potential, more of said avalanche hot electrons than said avalanche hot holes are injected into said floating gate, whereas when the potential of said floating gate is more negative than said balanced potential, more of said avalanche hot holes than said avalanche hot electrons are injected into said floating gate.
13. The method according to claim 12, wherein said electrons are discharged into said one of said source region, said drain region and said substrate so that the potential of said floating gate may be more positive than said balanced potential, to suppress the injection of said avalanche hot holes into said floating gate.
14. The method according to claim 13, wherein an impurity concentration of said channel region is increased, thereby inhibiting a threshold voltage decreasing due to the assistance the potential of said floating gate when the potential of said floating gate is set at positive value closed to said balanced potential after said discharge of electrons.
15. The method according to claim 8, wherein said injected electrons for programming the data for said device are channel hot electrons.
16. A method of erasing and programming a nonvolatile semiconductor memory device, said nonvolatile semiconductor memory device including a semiconductor substrate of a first conductivity type having source and drain regions of a second conductivity type which define a channel region therebetween, a gate insulator provided on said channel region, electron-holding means provided on said gate insulator, and a control gate insulatively spaced from said electron-holding means, said method comprising the steps of:injecting avalanche hot carriers into said electron-holding means by applying a voltage between said source region and said drain region so that said source region is at a higher potential, while simultaneously applying a voltage of 0 volts to said control gate; and then discharging electrons held in said electron-holding means to erase data from said device by applying a voltage between said control gate and one of said source region, said drain region, and said substrate so that said one of said source region, said drain region, and said substrate has a potential greater than a potential of said control gate; and then injecting hot channel electrons into said electron-holding means to program the device by applying a voltage between said source region and said drain region so that said drain region is at a higher potential, while simultaneously applying a voltage higher than a reading voltage to said control gate. 17. The method according to claim 16, wherein said channel region, when 0 volts is applied to said control gate, carries channel current smaller than that flowing when said control gate is applied with the reading voltage.
18. The method according to claim 17, wherein said avalanche hot carriers are induced by said channel current.
19. The method according to claim 18, wherein said electron-holding means comprises a floating gate, and said gate insulator comprises an insulating film, and the electrons held in said electron-holding means are discharged into said one of said source region, said drain region and said substrate by applying a voltage between said control gate and said one of said source region, said drain region and said substrate so that said one of said source, said drain region and said substrate region is at a higher potential, to allow F-N tunnel current to flow through said insulating film between said floating gate and said one of said source region, said drain region and said substrate.
20. The method according to claim 19, wherein said avalanche hot carriers include avalanche hot electrons and avalanche hot holes, and said floating gate has a balanced potential at which the amount of said avalanche hot electrons injected into said floating gate balances with the amount of said avalanche hot holes injected into said floating gate, and when the potential of said floating gate after the discharge of said electrons into said one of said source region, said drain region and said substrate is more positive than said balanced potential, more of said avalanche hot electrons than said avalanche hot holes are injected into said floating gate, whereas when the potential of said floating gate is more negative than said balanced potential, more of said avalanche hot holes than said avalanche hot electrons are injected into said floating gate.
21. The method according to claim 20, wherein said electrons are discharged into said one of said source region, said drain region and substrate so that the potential of said floating gate is more positive than said balanced potential in order to suppress the injection of said avalanche hot holes into said floating gate.
22. The method according to claim 21, wherein an impurity concentration of said channel region is increased, thereby inhibiting a threshold voltage decreasing due to the assistance of the potential of said floating gate when the potential of said floating gate is set at positive value close to said balanced potential after said discharge of electrons.
23. An electrically erasable/programmable nonvolatile semiconductor memory device comprising:a semiconductor substrate; a memory cell array comprising a plurality of memory cells formed on said semiconductor substrate, each memory cell comprising:source and drain regions formed on said semiconductor substrate which define a channel region therebetween; an electron-holding means; and a control gate insulatively spaced from said channel region; a tunnel erase control circuit for controlling the respective potentials of said substrate and of said control gate, said source region, and said drain region each cell within said memory cell array to discharge electrons stored in said electron-holding means by Fowler-Nordheim tunnel current; an avalanche hot carrier injection control circuit for controlling the respective potentials of said substrate and of said control gate, said source region, and said drain region of each cell within said memory cell array to balance the potential of said electron-holding means such that the amount of avalanche hot electrons injected into said electron-holding means balances with the amount of avalanche hot holes injected into said electron-holding means, said avalanche hot carrier injection control circuit applying a voltage of 0 volts to said control gate and a voltage higher than the voltage of said control gate to said source region to inject avalanche hot electrons into said electron-holding means; and data erasure control means for sequentially activating/deactivating said tunnel erase control circuit and said avalanche hot carrier injection control circuit. 24. A nonvolatile semiconductor memory device comprising:a semiconductor substrate of a first conductivity type having source and drain regions of a second conductivity type which define a channel region therebetween; a gate insulator provided on said channel region; an electron-holding means provided on said gate insulator; a control gate insulatively spaced from said electron-holding means; means for discharging electrons held in said electron-holding means by applying a voltage between said control gate and one of said source region, said drain region, and said substrate, so that at least one of said source region, said drain region, and said substrate has a potential greater than the potential of said control gate; and means for injecting avalanche hot carriers into said electron-holding means in order to converge the potential of said electron-holding means to a predetermined value by applying a voltage between said source region and said drain region so that said source region is at a higher potential, while simultaneously applying a voltage of 0 volts to said control gate. 25. A nonvolatile semiconductor memory device comprising:a semiconductor substrate of a first conductivity type having source and drain regions of a second conductivity type which define a channel region therebetween; a gate insulator provided on said channel region; an electron-holding means provided on said gate insulator; a control gate insulatively spaced from said electron-holding means; means for discharging electrons held in said electron-holding means to erase data from said device by applying a voltage between said control gate and one of said source region, said drain region, and said substrate so that said one of said source region, said drain region, and said substrate has a potential greater than the potential of said control gate; means for injecting avalanche hot carriers into said electron-holding means to converge the potential of said electron-holding means to a predetermined value by applying a voltage between said source region and said drain region so that said source region is at a higher potential, while simultaneously applying a voltage of 0 volts to said control gate; and means for injecting electrons into said electron-holding means to program data into said device by applying a voltage between said source region and said drain region so that said drain region is at a higher potential, while simultaneously applying a voltage higher than a reading voltage to said control gate. 26. A method of operating a nonvolatile semiconductor memory device including a semiconductor substrate of a first conductivity type having source and drain regions of a second conductivity type which define a channel region therebetween, a gate insulator provided on said channel region, carrier-holding means provided on said gate insulator, and a control gate insulatively spaced from said carrier-holding means, said method comprising the steps of:discharging carriers held in said carder-holding means by applying a voltage between said control gate and one of said source region, said drain region and said substrate, to generate Fowler-Nordheim tunnel current; and injecting avalanche hot carriers into said carrier-holding means, in order to converge the potential of said carrier-holding means to a predetermined value, by applying a voltage between said source and drain region so that one of said drain region and said source region is at a higher potential, while simultaneously applying a voltage of 0 volts to said control gate. 27. The method according to claim 26, wherein said data is erased from said memory device in said discharging step, and the threshold value of said memory device whose data is erased tends to converge to a particular threshold value.
28. The method according to claim 27, wherein said avalanche hot carriers are induced by a channel current.
29. A method of operating a nonvolatile semiconductor memory device including a semiconductor substrate of a first conductivity type having a source and drain regions of a second conductivity type which define a channel region therebetween, a gate insulator provided on said channel region, a floating gate provided on said gate insulator, and a control gate insulatively spaced from said floating gate, said method comprising the steps of:discharging electrons held in said floating gate by applying a voltage between said control gate and one of said source region, said drain region, and said substrate, so that at least one of said source region, said drain region, and said substrate has a potential greater than the potential of said control gate; and then injecting avalanche hot carriers into said floating gate in order to converge the potential of said floating gate to a predetermined value by applying a voltage between said source region and said drain region so that one of said drain region and said source region is at a higher potential, while simultaneously applying a voltage of 0 volts to said control gate. 30. A method of operating a nonvolatile semiconductor memory device including a semiconductor substrate of a first conductivity type having source and drain regions of a second conductivity type which define a channel region therebetween, a gate insulator provided on said channel region, a floating gate provided on said gate insulator, and a control gate insulatively spaced from said floating gate, said method comprising the steps of:discharging electrons held in said floating gate by applying a voltage between said control gate and one of said source region, said drain region, and said substrate, so that at least one of said source region, said drain region, and said substrate has a potential greater than the potential of said control gate; and then injecting avalanche hot carriers into said floating gate from said source region in order to converge the potential of said floating gate to a predetermined value by applying a voltage between said source region and said drain region so that said source region is at a higher potential, while simultaneously applying a voltage of 0 volts to said control gate. 31. A nonvolatile semiconductor memory device comprising:a semiconductor substrate of a first conductivity type having first and second regions of a second conductivity type which define a channel region therebetween; a gate insulator provided on said channel region; an electron-holding means provided on said gate insulator; a control gate insulatively spaced from said electron-holding means; means for discharging electrons held in said electron-holding means to erase data from said device by applying a voltage between said control gate and said first region, said first region having a potential higher than the potential of said control gate, the electrons held in said electron-holding means being discharged to said first region; means for injecting avalanche hot carriers into said electron-holding means to converge the potential of said electron-holding means to a predetermined value by applying a voltage between said first region and said second region so that said first region is at a higher potential, while simultaneously applying a voltage of 0 volts to said control gate, said avalanche hot carriers being injected from said first region to said electron-holding means; and means for injecting electrons from said second region into said electron-holding means to program data into said device by applying a voltage between said first region and said second region so that said second region is at a higher potential, while simultaneously applying a voltage higher than a reading voltage to said control gate. 32. A method of erasing and programming a nonvolatile semiconductor memory device, said nonvolatile semiconductor memory device including a semiconductor substrate of a first conductivity type having first and second regions of a second conductivity type which define a channel region therebetween, a gate insulator provided on said channel region, electron-holding means provided on said gate insulator, and a control gate insulatively spaced from said electron-holding means, said method comprising the steps of:discharging electrons held in said electron-holding means to erase data from said device by applying a voltage between said control gate and said first region so that said first region has a potential greater than the potential of said control gate, the electrons held in said electron-holding means being discharged to said first region; and then injecting avalanche hot carriers into said electron-holding means to converge the potential of said electron-holding means to a predetermined value by applying a voltage between said first region and said second region so that said first region is at a higher potential than said drain region, while simultaneously applying a voltage of 0 volts to said control gate, said avalanche hot carriers being injected from said first region to said electron-holding means; and then injecting electrons from said second region into said electron-holding means to program data into said device by applying a voltage between said first region and said second region so that said second region is at a higher potential, while simultaneously applying a voltage higher than a reading voltage to said control gate. 33. The method according to claim 16, wherein said injected electrons for programming the data for said device are channel hot electrons.
First, at step 1, the data is written into all cells. This is done to prevent overerasure of the data by injecting electrons into the floating gates 6 of all cells and then extracting electrons. This action is called preprogramming.
FIG. 7 is a flowchart for the operation off the erasing action control section;
As shown in FIG. 4, a plurality of memory cells 12 (121 to 12n) are arranged in matrix form on a chip 10.
The area where memory cells 121 to 12n are arranged in matrix form is called a memory cell array 14. Provided around the memory cell array 14 are a column decoder 16 for selecting the bit lines BL in the memory cell array 14, a row decoder 18 for selecting the word lines WL, and a mode select circuit 20 for selecting one of the write, erase, and read modes. The mode select circuit 20, which is connected to a data write/read circuit 22 and a data erase circuit 24, supplies a signal activating the write/read circuit in the data write/read operation and a signal activating the data erase circuit in the erase operation. The data erase circuit 24 is composed of a Fowler-Nordheim (hereinafter, abbreviated as F-N) tunnel erase control circuit 26 and an AHC injection control circuit 28. How the data in the flash EEPROM is erased will be explained below.
As shown in FIG. 9, an erase signal E is supplied to the F-N tunnel erase circuit 26 and a first input of an AND gate 29. The F-N tunnel erase circuit 26, which is activated by the erase signal E, produces a signal A. The signal A is used to set the respective potentials of the gate, source, and drain of the memory cell 12 so that the data may be erased by F-N tunnel current. The signal A is supplied to the input of an inverter 27. During the time when signal A is at the high (H) level, data erasure by F-N tunnel current is carried out. The inverter 27 supplies a low (L) level signal to a second input of the AND gate 29. The F-N tunnel erase circuit 26 measures a particular erase time, and brings the signal A to a low level after the particular erase time has elapsed. When the signal A is brought to a low level, the data erasure by F-N tunnel current has completed. When the inverter 27 supplies a high level signal to the second input of the AND gate 29, both inputs of the AND gate 29 are supplied with high level signals, which causes the AND gate 29 to supply a high level signal to the AHC injection control circuit 28. The AHC injection control circuit 28, which is activated by the high level signal, supplies a signal B. During the time when signal B is at a high level, the threshold value is tuned by AHC injection. The AHC injection control circuit 28 measures a particular tuning time, and brings the signal B to a low level after the particular tuning time has elapsed. The device recognizes the completion of data erasure from the falling of the signal B, and brings the erase signal E to a low level.
As shown in FIGS. 14 and 15, when the source diffused layer 103 of the MOSFET is grounded and the drain diffused layer 105 is applied with, for example, 6 V, channel electrons are accelerated in the vicinity of the drain diffused layer 105, generating AHCs, or AHEs (e) and AHHs (h) as a result of ionization by collision. Both AHEs and AHHs are injected into the gate with the injection efficiency depending on the gate voltage. The gate voltage has a balanced voltage Vg* at which AHE injection balances with AHH injection. When the gate voltage Vg is lower than the balanced voltage Vg*, AHHs (h) are predominantly injected into the gate 110, allowing the gate current Ig to flow. Conversely, when the gate voltage Vg is higher than the balanced voltage Vg*, AHEs (e) are predominantly injected into the gate 110, allowing the gate current Ig in a similar manner. When the gate voltage Vg is much higher than the balanced voltage Vg* carriers are sufficiently accelerated at the channel and turned into channel hot carriers (in this example, channel hot electrons CHEs because an n-type channel MOSFET is used), which are then injected into the gate 110, allowing the gate current Ig to flow.
The initial threshold voltage Vthint immediately after F-N tunnel erasing may be either lower or higher than the balanced threshold voltage Vth* as explained in the above embodiments. Since AHE injection efficiency is higher than AHH injection efficiency, it is desirable that the initial threshold voltage Vthint should be set lower than the balanced threshold voltage Vth* to allow AHE injection to take place predominantly. When AHH injection is decreased by enabling AHE injection to occur predominantly, the trapping of holes into the gate oxide film or the like is suppressed, thereby preventing the gate oxide film from deteriorating.
The VFG -AHC relationship illustrating in FIG. 22A results from the fact that the AHC injected is proportional to the product of the AHC and the AHC-injection efficiency shown in FIGS. 22A and 22B, respectively. Since the channel-impurity concentration is low, a channel current starts flowing at a low floating-gate voltage. At a low floating-gate voltage, both the AHH and the AHH-injection efficiency increase, and the AHH can readily be injected. At a high floating-gate voltage, on the other hand, both the AHE and the AHE-injection efficiency increases, and the injection of the AHE is predominant.
FIG. 25 is a flowchart covering the erase and write operations. FIG. 26 shows the relationship between the erase operation of FIG. 25 and the cell threshold value.
As shown in FIGS. 25 and 26, electrons are simultaneously extracted by F-N tunnel current from the written cells and erased cells (ST. 1). Then, AHCs are injected into the just erased cells to tune the threshold value (ST. 2). Next, the control gate of the selected cell is applied with a program voltage of, for example, 10 V, the source diffused layer is grounded, and the drain diffused layer is applied with an operating voltage of, for example, 5 V, to accelerate channel electrons to generate channel hot electrons (CHEs), which are then injected into the cell to write the data (ST. 3). The data may be written by applying 10.5 V to the control gate, and 5.0 to the drain diffused layer, and leaving the source diffused layer open to break down the junction of the drain diffused layer and substrate to generate AHEs, which are then injected into the cell. These AHEs differ in their source from the AHEs used in tuning the threshold value. That is, the AHEs used for threshold value tuning are generated by channel current, whereas those used in writing the data are produced by breakdown current. When the voltage of the control gate is lower than the threshold value, the potential of the floating gate converges at the balanced potential VFG*. When the voltage of the control gate is higher than the threshold value, however, AHEs are accelerated more heavily, so that more AHEs are injected into the floating gate. As a result, the potential of the floating gate is shifted toward a written potential lower than the balanced potential.
With this method, after the data is erased by F-N current, there is variation in the threshold value of the erased cells. However, the process of raising the threshold value by AHC injection as with the method shown in FIG. 25, prevents the cells from being overerased.
Patent CitationsCited PatentFiling datePublication dateApplicantTitleUS4173791 *Sep 16, 1977Nov 6, 1979Fairchild Camera And Instrument CorporationInsulated gate field-effect transistor read-only memory arrayUS4503519 *Mar 19, 1982Mar 5, 1985Fujitsu LimitedSemiconductor non-volatile memory element of an electrically erasable typeUS4742491 *Sep 26, 1985May 3, 1988Advanced Micro Devices, Inc.Memory cell having hot-hole injection erase modeUS4884239 *Apr 5, 1988Nov 28, 1989Oki Electric Industry Co., Ltd.Method for erasing data in a semiconductor memory deviceUS5272669 *Feb 20, 1991Dec 21, 1993Sundisk CorporationMethod and structure for programming floating gate memory cellsEP0252027A2 *Jun 22, 1987Jan 7, 1988SGS-THOMSON MICROELECTRONICS S.r.l.Electrically alterable, nonvolatile, floating gate type memory device with reduced tunnelling area and fabrication thereofEP0301521A1 *Jul 27, 1988Feb 1, 1989Kabushiki Kaisha ToshibaNonvolatile semiconductor memory deviceEP0369676A2 *Nov 9, 1989May 23, 1990Seiko Instruments Inc.Semi-conductor non-volatile memoryJPH03230566A * Title not availableJPS5571072A * Title not available* Cited by examinerNon-Patent CitationsReference1 *E. Takeda et al., Device Performance Degradation Due To Hot Carrier Injection At Energies Below the Si SiO 2 Energy Barrier, 1983 International Electron Devices Meeting, Article No. 15.5, pp. 396 399, Dec. 1983.2E. Takeda et al., Device Performance Degradation Due To Hot-Carrier Injection At Energies Below the Si-SiO2 Energy Barrier, 1983 International Electron Devices Meeting, Article No. 15.5, pp. 396-399, Dec. 1983.3 *K. Naruke et al., Restraint Of Variation In Threshold Voltage To , Prevention of Excessive Erasion In Flash Type EEPROM, Nikkei Microdevices, pp. 85 91, Feb. 1992 (English Translation Attached).4K. Naruke et al., Restraint Of Variation In Threshold Voltage To 1/3, Prevention of Excessive Erasion In Flash Type EEPROM, Nikkei Microdevices, pp. 85-91, Feb. 1992 (English Translation Attached).5 *S. Yamada et al., A Self Convergence Erasing Scheme For A Simple Stacked Gate Flash EEPROM, 1991 International Electron Devices Meeting, Article No. 11.4.1, pp. 307 310, Dec. 1991.6S. Yamada et al., A Self-Convergence Erasing Scheme For A Simple Stacked Gate Flash EEPROM, 1991 International Electron Devices Meeting, Article No. 11.4.1, pp. 307-310, Dec. 1991.* Cited by examinerReferenced byCiting PatentFiling datePublication dateApplicantTitleUS5650964 *Jun 7, 1995Jul 22, 1997Advanced Micro Devices, Inc.Process for discharging a floating gate active semiconductor deviceUS5680350 *Dec 14, 1994Oct 21, 1997Micron Technology, Inc.Method for narrowing threshold voltage distribution in a block erased flash memory arrayUS5719807 *Jul 25, 1996Feb 17, 1998Sgs-Thomson Microelectronics S.R.L.Flash EEPROM with controlled discharge time of the word lines and source potentials after eraseUS5815440 *Mar 24, 1997Sep 29, 1998Fujitsu LimitedSemiconductor memory device with electrically controllable threshold voltageUS5930169 *Feb 9, 1998Jul 27, 1999Kabushiki Kaisha ToshibaNonvolatile semiconductor memory device capable of improving of chip's lifetime and method of operating the sameUS5930173 *May 15, 1997Jul 27, 1999Nec CorporationNon-volatile semiconductor memory device having trapped charges pulled outUS5933367 *Mar 18, 1998Aug 3, 1999Nec CorporationErasing method in nonvolatile semiconductor memory deviceUS5999456 *Oct 3, 1997Dec 7, 1999Stmicroelectronics S.R.L.Flash EEPROM with controlled discharge time of the word lines and source potentials after eraseUS6288945Dec 10, 1999Sep 11, 2001Fujitsu LimitedNonvolatile semiconductor memory device having electrically and collectively erasable characteristicsUS6414874Apr 12, 2001Jul 2, 2002Fujitsu LimitedNonvolatile semiconductor memory device having electrically and collectively erasable characteristicsUS6563738May 20, 2002May 13, 2003Fujitsu LimitedNonvolatile semiconductor memory device having electrically and collectively erasable characteristicsUS6611464Oct 7, 2002Aug 26, 2003Fujitsu LimitedNonvolatile semiconductor memory device having electrically and collectively erasable characteristicsUS6618288Oct 7, 2002Sep 9, 2003Fujitsu LimitedNonvolatile semiconductor memory device having electrically and collectively erasable characteristicsUS6646920Oct 7, 2002Nov 11, 2003Fujitsu LimitedNonvolatile semiconductor memory device having electrically and collectively erasable characteristicsUS6711060 *Mar 13, 2002Mar 23, 2004Renesas Technology Corp.Non-volatile semiconductor memory and methods of driving, operating, and manufacturing this memoryUS6784483 *Sep 4, 2002Aug 31, 2004Macronix International Co., Ltd.Method for preventing hole and electron movement in NROM devicesUS7529136Aug 24, 2007May 5, 2009Rino MicheloniMethod for compacting the erased threshold voltage distribution of flash memory devices during writing operationsCN100446253CJul 1, 2005Dec 24, 2008马维尔世界贸易股份有限公司Semiconductor device, nonvolatile storage unit and operation method thereof* Cited by examinerClassifications U.S. Classification365/185.18, 365/185.09, 257/E29.306, 365/185.24, 365/185.29, 257/E27.103, 365/185.27International ClassificationG11C16/16, H01L29/788, H01L27/115, G11C16/34Cooperative ClassificationG11C16/16, G11C16/3404, H01L29/7885, G11C16/3409, H01L27/115European ClassificationG11C16/34C2, G11C16/16, G11C16/34C, H01L29/788B6B, H01L27/115Legal EventsDateCodeEventDescriptionFeb 26, 2007FPAYFee paymentYear of fee payment: 12Dec 25, 2002FPAYFee paymentYear of fee payment: 8Mar 8, 1999FPAYFee paymentYear of fee payment: 4Jun 26, 1992ASAssignmentOwner name: KABUSHIKI KAISHA TOSHIA A CORP. OF JAPAN, JAPANFree format text: ASSIGNMENT OF ASSIGNORS INTEREST.;ASSIGNORS:NARUKE, KIYOMI;SUZUKI, TOMOKO;YAMADA, SEIJI;AND OTHERS;REEL/FRAME:006199/0809Effective date: 19920622RotateOriginal ImageGoogle Home - Sitemap - USPTO Bulk Downloads - Privacy Policy - Terms of Service - About Google Patents - Send FeedbackData provided by IFI CLAIMS Patent Services

value: Google Patents is a search engine from Google that indexes patents and patent applications.


value: Overstock, excessive stock, excess2sell, B-stock, or excess inventory, is the result of poor management of stock demand or of material flow in process management. Excessive stock is also associated with loss of revenue owing to additional capital bound with the purchase or simply storage space taken.


text:
AC HOTEL BY MARRIOTT LOS ANGELES SOUTH BAY (El Segundo, CA) - Hotell - anmeldelser og prissammenligning - TripAdvisor
Hotell i nærheten av Touch Institute Los Angeles
Hotell i nærheten av Hana Haru Restaurant
AC Hotel by Marriott Los Angeles South Bay anmeldelser, El Segundo
Nr. 12 av 14 hoteller i El Segundo
AC HotelsUSD 242
Los Angeles Internasjonale Lufthavn3 km
Long Beach Lufthavn27 km
Nr. 20 av 370 hoteller i Los Angeles
Nr. 79 av 370 hoteller i Los Angeles
Nr. 114 av 370 hoteller i Los Angeles
Nr. 149 av 370 hoteller i Los Angeles
1.6 km til Los Angeles Internasjonale Lufthavn
7.6 km til Marina Beach
2.9 km til Los Angeles Internasjonale Lufthavn
7.6 km til Manhattan Beach
Veldig fint hotell med store rom. Vi bestilte ett dobbeltrom med to doble senger men fikk en kingsize dobbeltseng, noe som gikk helt greit selv om jeg reiste med min 15 år gamle sønn. Kaffemaskin på rommet, men... Jeg er veldig glad i å bo på Crown Plaza hoteller. Hvorfor er jeg det? Crown Plaza LAX, som andre CP- hoteller, har veldig god service, standarden på hotellet er veldig bra og man har gode muligheter for å få seg...
Tina F skrev en anmeldelse I går
Panama City Beach, Florida13 bidrag
Brand new so everything is fresh. Trendy restaurant/bar on first floor. Didn't eat there but looked yummy. Helpful front desk staff. Didnt use valets but they were always so friendly. Great location - close to LAX and beaches. Very quiet - didn't hear planes at all at LAX. Comfy bed and pillows. Only reason I didn't give it 5 stars is 1) we were charged for parking even though we parked on the street both days. They gave me a credit for one day of parking but not the other day. 2) Serious problem with toilets. In their admirable quest to conserve water, the toilets don't use enough of it to flush, therefore not enough water pressure. Toilet clogs easily. Other than that, it was a wonderful stay. Will stay again next time I visit LA.…
Heath J skrev en anmeldelse 21. jul.
Although there was issues with having rooms ready due a city wide power outage everyone was pleasant. Everyone from the Valet, bar keeps to the front desk. Rooms are awesome along with all the extras. Netflix on the television was extremely nice for the kids. I would definitely recommend staying here and I will definitely be back if I’m ever in the LA area.…
Keith S skrev en anmeldelse 21. jul.
Washington DC, District of Columbia130 bidrag10 nyttig-stemmer
Brand new awesome LAX option
I stayed at this hotel for one night on the sixth day it was open. This is the lax/el segundo hotel I’ve been waiting for. Unlike other AC Brands this one has a huge open lobby, big hallways, and spacious rooms. It is super modern and located right behind a bunch of brand new restaurants and businesses. This area is really taking off and is now very modern and fun. All these new restaurants are within walking distance. This area is really transformed and this hotel is well situated. I no longer need to stay at the run down Marriott properties in el segundo. The rooftop bar was not open yet, but it looks nice. 15 for self-parking and 25 for valet. Staff friendly and eager to serve. Will be staying here many times in future and I highly recommend you give it a try …
drmader skrev en anmeldelse 20. jul.
Orinda, California1 302 bidrag230 nyttig-stemmer
Brand new , clean and comfortable.. seemed over staffed at valet maybe because they just opened ? Extremely helpful people. Close to LAX and manhattan beach.. liked the gym because it had ropes and interval training things that made it more interesting. Until an Uber here and was picking up a at and family from lax the next day so it was perfect. Area airport hotels are sometimes not great so I will highly recommend and el segundo has a cute downtown vibe .. this hotel Is more office park lax adjacent but a quick ride to the downtown. Reliable Marriott property. I will be back …
Próspero B skrev en anmeldelse 16. jul.
I really liked the hotel, it’s pretty brand new, it has very comfy beds and the staff is incredible friendly. Rooms include very modern features and they have hives TVs. I will come back for sure and I recommend it 100%.


text:
Swim Smooth Perth Blog: March 2009
Please be advised of the following training schedule this week:
Mon - am = run (as discussed at the brick session, please ignore program & shorten this to a 35 mins easy jog) & Time-4-Me at 9.30am; pm = bike (wind trainer session in Mount Hawthorn 6 / 6.15pm)
Tue - am / pm = all swims (5.30, 6.30 and 7.30am + 7pm) are all available. Easy session.
Wed - am = easy social ride at 5.50am & Time-4-Me at 9.30am.
Thu - am = Cottesloe Beach openwater session at 6.30am - come along for some FUN!; pm = recovery run drills and intervals at Lake Monger.
Fri - am = all squad sessions (5.30, 6.30, 7.30 and 9.30am) are available; pm = Rotto Boot Camp - meet at Rous Head at 6pm - don't be late!
Sat - am = brick session on Rotto (~1.5k, ~90k, ~10k); pm = afternoon swim skills session. At this stage, we may have to cancel or leave the 1pm squad swim with a session to complete (TBC).
Sun - am = run on Rotto. Ferry back at 11am.
Brick Session Results:
Today's Brick Session was a perfect display of how fickle it can be trying to predict race results and split times due to the varying nature of the elements! The ocean was rough and full of stingers, the bike was very windy, and the run was very hot...but you just never know if you might get these results at Busselton on the 2nd May, so well done for toughing it out TEAM! Take these results with a pinch of salt - they are not an indication that you are getting slower!!!!
It was a great turn-out this week, with 25 athletes completing the 1.5k swim + 73km bike + 12km run. My overall feeling is that a) people pushed a little too hard on the bike and then suffered on the run and that b) people's nutrition wasn't where it should be, most notably due to dehydration on the run. If you haven't yet listened to our advice on nutrition at http://www.theteamcore.com/podcast.html, you need to do so as a matter of extreme importance - it just might save your bacon on race day! Having "bad days" or "tough days" at the "office" like this is what training for a HIM is all about - better to get it "wrong" today, than on the 2nd May!
As a "footnote" I was very proud with the tenacity and team spirit you all showed today - be it a good day or a bad day (weatherwise) on the 2nd May - this is what will get you to that finish line!
Results can be seen now at: http://www.swimsmooth.com/Documents/Brick_2.xls (please note, guestimations have been added in yellow for those who didn't complete certain sections).
Swim - on average ~ 2 mins slower for predicted HIM time than last week, apart from Mary who swam 45 seconds faster and Jo exactly the same! Well done girls!
Bike - bit of a "mixed bag" on the bike, some people quicker than last week's predictions, some slower, showing that the conditions affected people differently. Stand-out improvements came from Mel Cundy and Helen Masson this week, both riding ~ 7 mins better than last week.
Run - here's where the tale was really told though! Without exception, every member of the group ran between 5 and 15 mins slower than their predicted HIM time from last week, even if they were looking better on the bike this week. This simply shows that despite strong rides into the elements this week, the increased effort required on the bike resulted in a much slower run time. This is a lesson well worth considering for the race.
Total - everyone's total time (due to the run in particular) was slower than last week (by 5 to 20 mins), with the exception of Joanna Thomson who performed 5 mins better than last week, showing some great improvement! Well done Jo!
Hope that all makes sense - big shout out to the random lady who bought me a coffee whilst I was getting all of your splits down!
Dear Groovers
This Saturday's Brick Session at Cottesloe Beach will be an almost
complete re-run of last week, but slightly longer at 1.5k/70k/12k.
Come and have your race time predicted and see where your fitness is
at! You are required to know the course yourself so please familiarize
yourself with the details below.
We will meet at 645am in the cottesloe car park and hope to be started
a little earlier this time at ~ 710am. Please bring a suitable small
bag to collect all your gear together between disciplines as I'm not
sure I will have any storage transport again this week. Bring plenty
of fluid and nutrition also.
Full details for those who didn't attend last week can be found at:
http://theteamcore.blogspot.com/2009/03/hunt-for-most-consistent-swimmer.html
...or just scroll down from the main Blog page.
It was a great morning for our 40km cycle time-trial down at Shelley with 17 athletes participating over the flat-to-undulating course. All went smoothly apart from Mary unfortunately dropping her light right at the start and having to go back and retrieve it - c'est la vie! Nevertheless, everyone performed well, even if they didn't feel up for anything so fresh and fruity at 5.50am! Athletes were instructed to ride the time trial at Half Ironman (90km) pace, and as such the results reflect this. Again, I have posted a predicted HIM time based on this being true HIM pace.
Please find the results at http://www.swimsmooth.com/Documents/40km.pdf including the 1st and 2nd 20km splits as well as the difference (green indicates the riders rode the 2nd half faster than the first). The official GPS reading from Helen was just shy of 40.0km (39.7km) which would equate to ~ 30 to 40 seconds slower had the full distance been achieved.
Hope you have all had a great weekend and are looking forward to a great week of weather just perfect for getting some quality training done.
NEW OPENWATER SESSION - change of time:
Thursday's - 6.30am for 5 weeks, Cottesloe Beach Open Water Swim Skills Session. Starting Thursday 2nd April.
Just a quick note first, Wednesday evening's proposed new openwater swim session will not commence until next week. We've had a look at the sunrise / sunset times for the change to daylight savings (effective as of next weekend) and we've decided that this will make it too dark in the evening to attempt this session. However, Thursday morning's are free and so as of Thursday 2nd April we will be running a 5-week program aiming to develop your skills and confidence in the openwater in readiness for the Busselton Half Ironman on the 2nd May. These sessions will be suitable for any of our squad swimmers and will feature technique and fitness work in a fun environment down at Cottesloe Beach. Cost is just 1 credit off you card as normal and we will meet each week at 6.30am (stretching) for a 6.45am in-the-water start. Session will run for 45 mins followed by optional breakfast at Daisies. Hope you can make it!
The Hunt for the Squad's Most Consistent Athlete:
As you know, last week was all about consistent pacing and we put this to the test on the following 3 sessions:
Thursday's 4km + 3km + 2km + 1km run session (getting progressively faster per 'block')
Friday's 12 or 15 x 100m threshold swim session
Saturday's 1km + 70.5km + 9.25km brick session at Cottesloe Beach
Thursday's run session:
The whole goal of tonight's session was to start off doing a 4km run at ~ HIM pace + 1'30" rest and then do a 3km run, followed by a 2km run and finally a 1km run (1'30" rest between each set), aiming to get 10" per km faster in each set. Pacing was critical. 15 athletes attempted this session. Showing the most consistency on tonight's session was Mike Bowles, Dan Timbers and Neil - the results of which (including EVERY km split for EVERY athlete) can be seen below:
http://www.swimsmooth.com/Documents/10km.pdf
This was a good test for all the athletes and an important session for pace awareness.
Friday's Threshold 100s Swim Session:
Then it was onto the swim challenge of the week - who could hold the most consistent 100m intervals on a short rest of ~10 to 20 seconds for a total of 12 or 15 intervals. Topping the charts today was Jane Day, Andrew Maslen, John Harris and Judi Clemie, all of whom held their intervals within 1 second of each other - good work! 54 swimmers took part in this test and the results of each athlete can all be seen below (we are missing results for Guy and Annette van Hazel however - guys if you have yours, please let me know!):
http://www.swimsmooth.com/Documents/ConsistencyTest.pdf
Interestingly enough, several of the athletes were instructed to use the Wetronome swim pacing tool (see details of this great tool here - http://www.swimsmooth.com/strokerate1.html ). These athletes were using a new demo model of the Wetronome which can be programmed to beep at you every time you hope to be at 25m / 50m / 75m / 100m etc. For example, if Judi wanted to swim 2:04 per 100m, she would program the Wetronome to beep at her every 31 seconds and would then make sure she was at the 25m markers every time the beep went off. You quickly learn to slow down in the first 25m in order to maintain a consistent pace in the final stages of the session. It really will be an excellent tool for helping our athletes maintain consistency in their pacing - and as you know, that is the key to success in this sport!
Saturday's Brick Session:
Finally, 14 athletes partook in our 1km swim + 70.5km bike + 9.25km run "brick" session on Saturday morning in excellent conditions down at Cottesloe Beach. Again, the focus here was on consistency and aiming to establish knowledge and appreciation of what "Half Ironman" pacing really feels like. 182 time data points were collected over the course of the morning's session to ensure that EVERY athlete knew not only what time they had done for each of the respective disciplines (swim, bike and run) but also how their lap times compared from lap to lap. Knowing the exact distance of each lap, we have been able to determine the actual pace each athlete was holding for each discipline, which will allow them to now continue their development of this pace in the remaining 6 weeks before the Half Ironman.
Swim = Marius Grobelaar
Bike = Helen Masson (note that Lap 1A and 2A are the 'northern laps' of this course and 1B and 2B are the 'southern laps')
Run = Mel Cundy
Half Ironman Race Prediction:
What is more, after several requests for us to try and determine suitable target times for each athlete within the squad for each discipline (and a predicted race finish time), we have been able to have a reasonable attempt at doing this, as can be seen in the spreadsheet below (you will need Microsoft Excel to open this file):
http://www.swimsmooth.com/Documents/Brick.xls
Obviously their are a few caveats with this and we have assumed the following in these calculations:
Swimmers will hold a similar pace for the 1.9km swim in 6 weeks time as they did in today's 1.0km swim. This is simply due to a) more efficiency within 6 weeks of training, and b) due to the beneficial drafting effect and the aid of a wetsuit on the day of the race.
On Saturday's session we have assumed that each athlete was held at traffic lights for a rough total of 5'00". This could have been longer, it could have been shorter, and each athlete will accelerate / decelerate differently in response to the lights. We have "corrected" their cycle times in response to this and have used the "corrected" average speed for predicting their Half Ironman bike pace. Saturday's course was also quite lumpy and certainly not as flat as Busselton and without the effect of loads of cyclists on the course either. It was, however, 20km shorter and as such, we have simply used this pace to predict HIM pace, though my true prediction is that we can expect each athlete to ride ~ 5 to 10 mins quicker still than these times.
We have factored in for between a total of 4'00" and 10'00" transition times in the Half Ironman prediction, except where the athlete has already competed in this event and we were able to access this actual time from the records.
We have factored in a "fatigue factor" of 5% on the 9.25km run times from Saturday in the predictions for the Half Marathon run. My suspicion is that this may need to be as much as 8% in reality, but it's a start and may go some way to correcting for the slightly slower bike times than expected. Again, this is where the run-walk Galloway Method ( http://www.jeffgalloway.com/training/walk_breaks.html ) will really come into it's own on race day to help stave off this fatigue.
Having said all of that, once I fed all the times in to the spreadsheet from Saturday and then cross-referenced these against the four athletes from the group who have previously competed on this course last year, I was pleasantly surprised to find the following*:
Mel Cundy - 2008 race time = 5:49'42", race prediction = 5:49'40" - a difference of just two seconds!
Mary Tennant - 2008 race time = 6:42'15", race prediction = 6:42'10" - a difference of just five seconds!
Helen Masson - 2008 race time = 5:53'00", race prediction = 5:50'38" - a difference of just 2'22"!
Helen Buckle - 2008 race time = 5:22'00", race prediction = ~5:16'00" - a difference of just 6'00" (please note Helen did not complete the run on Saturday, so I am basing my assumptions here on Thursday's run session)
* please note that since the initial posting of this information, Helen Masson (our GPS guru) has informed me that Saturday's ride was 71.36km, not 70.5km as originally used in the formula. Correcting for this means that everyone's cycle times are actually now a little faster anyway, but I'd expect them to be another ~5 to 10 mins quicker still come race day.
...now you could read this in a number of ways: 1) that the prediction calculator can't be too far off the mark; 2) that the athletes concerned are only a touch faster than this time last year, which may be disappointing if they were hoping to have improved; or 3) realizing that we still have 6 weeks to go, and knowing this 'information' should really help motivate the athlete's concerned to develop their performances in the areas that still need work. Take this information with a pinch of salt obviously, but hopefully some of you will find it useful / interesting to see where you're at currently.
Numbers, numbers, numbers...blah, blah, blah!
Now you could look at all these numbers and think "yeah, yeah, so what - it's what happens on race day that counts and you can't control X, Y and Z on race day to be able to accurately give a guestimate of what someone is capable of" and I'd agree with you, up until a point. As much as I hate giving out athlete's my predictions of their future performances, simply because things such as punctures, bad weather etc may totally screw up your 'plans' and that if you see yourself falling behind your targets or slowing down too much when you are actually having a stellar day can really mess with the most important element of the race - your mental control. However, this week has been an excellent chance for those of you who participated in the various sessions to actually "feel" what it "feels" like to exercise at these intensities, so come race day, if you are in tune with your body and know what pace you feel you can maintain consistently, you're in a much better position than someone who has ignored the "numbers" and thought "she'll be right mate!" as "she" quite often is not!
Have a great week...need I say "let's make sure we pace it out well?!"
A number of you have been enquiring with me recently about who and where you can be assured of a good massage to aid those aching muscles after a hard bout of training. I'd never recommend a service or product without having personally tried it myself and as such I am happy to recommend Jen Newman at http://www.muscletherapy.com.au for this very purpose.
Jen treats out of Body Balancing Nutrition at 176a Cambridge Street in Wembley (across from St. John of God Hospital) and has offered $10 off each 1hr treatment (normally $70) just by calling up and mentioning "The TEAM CORE". Jen can be contacted on 0433 308 733 for all bookings / to answer any queries.
Jen was my massage therapist in my lead-up to the Rottnest Channel Swim and I cannot recommend her highly enough.
Hope you all had a great weekend. If you raced at the City of Perth
triathlon over the weekend please let me know how you got on. We want
to hear all about it! ;-)
All training as per normal this week and back onto a build week after
last week's recovery week.
See you tonight at the cycle session or tomorrow morning at the swim!
This is a final call for anyone still keen on attending the Rottnest Boot Camp on the 3rd, 4th & 5th April. Its going to be a great, fun weekend and at an all inclusive price of just $220 is only a little more than the Perth Olympic Distance race this Sunday...bargain!!
Please complete the form at http://www.theteamcore.com/bootcamp.html as soon as possible. We currently have 10 people signed up (8 athletes and 2 coaches). This will be a great chance to get some quality training in for the Busso Half Ironman in a really relaxed and fun environment.
P.S Some of you will be doing the Perth race this Sunday and we wish you the very best of luck with that. The recommendation is to have a day off on Friday, followed by a light spin of ~ 45 mins on Saturday and a short 15 mins run. For those not racing, it is still an easy week and as such on Saturday a ride will be leaving from the Bell Tower at 6.30am and heading off around the river - just steady!!
N.B Please note that all 4 squad swim sessions will be on tomorrow as normal despite the race (i.e. 5.30am, 6.30am, 7.30am and 9.30am) and Saturday squad swim session at 1pm will also be on as well. Please attend if you can. Thanks and have a fab weekend whatever you're doing!
A good turn-out and some great results on Thursday for the 5km Time Trial run around Lake Monger - check them out:
Thanks everyone for taking an interest in Jackson this week and many of you wanting to see more photos - being the budding photographer that I am (I've already snapped over 300!!) I thought I'd share a few more with you until you see him down on the pool deck very soon!
Hope you are having a great week - a little chilly out there the last couple of mornings!!
1) Next week is a recovery week and finishes off with the Perth Olympic Distance Triathlon next Sunday for those of you who are entered for that.
2) Next week also sees the start of Block # 3 of the Ironman Program, so please can those athletes on the Silver monthly program ensure that their monthly payment is made before next week so I can send out your next block of training.
3) I've been getting very little feedback from the Silver & Gold Plan athletes on a weekly basis. Please remember that I need you to complete the form at http://www.theteamcore.com/feedback_weekly.html in order for me to check how you are progressing. This is critical for my evaluation and suggestions on how you may improve further.
4) Bronze Plan athletes, please complete the feedback form at http://www.theteamcore.com/feedback.html in your own time to also let me know how this last 4 week block has gone for you.
5) All sessions running this week as per http://www.theteamcore.com/weeklyprogram.html (save for the "yellow" swims with me!).
6) Saturday's ride will leave at 6.30am from the Bell Tower and will follow this route: http://www.mapmyride.com/ride/australia/perth/170211302 through Mundaring Weir (very scenic). I should be there to ride out with you and manage the "peloton" for the first hour.
7) Numbers are a little on the low side at this stage for our super-fantastic Rottnest Boot Camp scheduled for the 3rd to 5th April 2009. I need to confirm numbers with the Island Authority asap, so please if you're keen to attend this super-value-for-money all inclusive* weekend for just $220 visit http://www.theteamcore.com/bootcamp.html and register your interest online. Thanks.
* price includes return ferry, 2 nights accommodation, 2 breakfasts, top quality coaching sessions with Paul and Adam, Taper Time Tapas evening and bike transfers but excludes 2 evening meals and lunch on Saturday.


text:
Dot Scribbles: Book Review: Between a Mother and her Child by Elizabeth Noble
For Maggie and Bill it was love at first sight...One impulsive wedding later and with the arrival of three perfect children, Jake, Aly and Stan, the Barrett family seem to have it all. Until the day their world stops turning.When Jake dies suddenly, they're swept away on a tide of grief that fractures Maggie and Bill's marriage. She and the children are left clinging to the wreckage of their family. And they need help, because in her grief Maggie is in danger of losing Aly and Stan too.Enter Kate, housekeeper, companion and shoulder to cry on. She's here to pick up the pieces and fix what isn't completely broken. But can Maggie trust Kate? And why is Kate so keen to help?When Bill falls for another woman, Maggie realises she will have to fight to put her family back together- but will they still want her?
Between a Mother and her Child is Elizabeth Noble's seventh book and I think it is her best so far. Maggie and Bill's world is torn apart when their teenage son Jake is killed in a tsunami whilst on his gap year travels. Life will never be the same again but life has to go on, especially when you have two other children depending on you. The grief caused by Jake's death leads Maggie and Bill to separate. Maggie's sister from Australia can see that the family is falling apart and enlists the help of Kate; part Mary Poppins and part rent-a-granny; Kate comes into their lives at just the right time. Bill has met another woman and Maggie realises that she may be close to losing Aly and Stan due to the barrier of grief that she has put up around her. Kate will hopefully be able to help but why doesn't she have her own family to look after?
Elizabeth Noble explores the devastating affect that grief can cause within a family. We get to know each member of the Barrett family and see their different perspectives in losing Jake and how it has affected them individually and their relationships with each other.
I thought that the book was really interesting in that Jake's death causes Maggie and Bill's marriage to come to an end but not their relationship. Of course they still have to have contact because of the children but it becomes very clear as the book develops that they still love each other. They may not want to continue their marriage but they must find a way to move on in order to find any happiness in the future.
Elizabeth Noble's writing is very poignant and there were times when I was close to tears. She is so good at giving you all the little details so you feel as though you know the characters completely and this is what kept me turning the pages.
If you haven't read any of Elizabeth Noble's books then I highly recommend them. Between a Mother and her Child is a highly emotional read but worth every page.
Many thanks to Kate at FmCm Associates for sending me a copy of the book to review, it is out now.
Dot, a 5 out of 5 rating means a great book and this one sounds just like one. I'm a fan of Noble's work, so I'll definitely be looking for this one. Great post!!
I have seen this one and dithered over it, mainly because I have been left feeling a bit lack lustre with some of her other novels. Might have to give this one a go though.
Sounds like an emotional rollercoaster, not sure I'd cope with it as I always find books far more emotional than say tv or film.
Nadia- Thank you, she's a great author isn't she! Jo- I hope you do, it's really good! Jessica- I know what you mean, good when a book can evoke such strong emotions though.
Lovely review Dot. I've not read anything by Elizabeth Noble but I've added this to my wish list.


text:
Atwood Road Tell City, IN home and property info
Atwood Road, Tell City 47586 contains 10 assessor property records. 12850 Atwood Road, Tell City IN
13790 Atwood Road, Tell City IN
13870 Atwood Road, Tell City IN
This 4 bedroom, 2 bathroom home has 1620 square feet and was built in 2014.
13540 Atwood Road, Tell City IN
12900 Atwood Road, Tell City IN
This 3 bedroom, 1.5 bathroom home has 3039 square feet and was built in 1987.
13795 Atwood Road, Tell City IN
12880 Atwood Road, Tell City IN
This 2 bedroom, 2 bathroom home has 1968 square feet and was built in 1999.
12950 Atwood Road, Tell City IN
12804 Atwood Road, Tell City IN
12850 Atwood Road, Tell City IN
This 3 bedroom, 1.5 bathroom home has 2799 square feet and was built in 1987.

value: Trulia is an American online real estate marketplace which is a subsidiary of Zillow. It facilitates buyers and renters to find homes and neighborhoods across the United States through recommendations, local insights, and map overlays that offer details on a commute, reported crime, schools, churches and nearby businesses.Founded in 2005, Trulia is based in San Francisco, and owned and operated by Zillow Group, Inc.


text:
That this one device plays an Important role in the world of electronic music in terms of its ABILITY to accommodate the need - the need for creation and modification of musicians will of sound. Control aspects of musical sound in terms of voltage regulation to be one factor sintesiser device discovery, a device Which Can be Used to create and Modify sound for applications - applications musical. Among the earliest Were Made in RCA sintesiser 1950s.
During the year 1960 began synthesizer manufactured by companies - companies Standard and Poor 'Moog and Buchla and already Used widely in the genre of rock music. Famous bands like the Beatles and the Beach Boys Also began to experiment in the multitrack recording process allows Trust Different Recordings That Are Synchronized into one band of the Same.
Sintesiser is a Machine That Can generate and electronically modifying the sound, often found Used with a digital computer for the purposes of electronic music or live performances Composition. Basically sintesiser generate form - the form of waves / sound waves and then process Them on the change in intensity, duration, frequency and color timbrel sound. Sintesiser work with analog oscillator - an electronic oscillator and filter - a filter That produces a combination a simple combination of pure frequency standards - standards wavetorm such as sine (sinus) and squre.
Posted by i-tasik at 8:16 AM
Labels: Poor Moog and Buchla, synthesizer