this invention is described with four embodiments . fig1 ( a ) through 5 illustrate the first embodiment . fig1 ( a ) illustrates a schematic view of the logic - hybrid memory and a circuit structure of the memory and control blocks . the first voltage control circuit is arranged in an interface block 101 in the logic - hybrid memory 100 . fig1 ( b ) illustrates the circuit &# 39 ; s overall operational aspects in fig1 ( a ). the memory cell array has row addresses and column addresses used by the row decoder and column decoder , respectively . the first voltage control circuit is partially illustrated in fig2 . the first voltage control circuit comprises nmos transistor 1 and pmos transistors 2 and 3 . the nmos transistor 1 and the pmos transistor 2 are transfer gates . the gate electrode of the pmos transistor 2 is connected to a reset signal line of inner circuit inrst , and the gate electrode of the nmos transistor 1 is connected to signal line binrst ( reversal signal of inrst ). the input of this transfer gate is connected to signal line rasbx , and the output is connected to rasbi . rasb is the reverse signal of the row address strobe signal . rasbx is the external signal line of rasb , and rasbi is the internal signal line of rasb . therefore , rasbi is connected to the word line and memory cell array through a row decoder illustrated in fig1 ( b ). rasbx is connected to the circuit in the logic block in fig1 ( a ). a source of the pmos transistor 3 is connected to the high voltage power source vdd and a drain is connected to rasbi . a gate is connected to signal line binrst . the second voltage control circuit is illustrated in fig3 . the circuit diagram for the second voltage control circuit illustrated in fig3 is similar to the circuit diagram for the first voltage control circuit illustrated in fig1 ( a ). the difference between the two circuits is the circuit in fig3 is coupled between casbi and casbx instead of rasbx and rasbi . casb is the reversal signal of the column address strobe signal . casbx is the external signal line of casb and casbi is the internal signal line of casb . therefore , casbi is connected to the bit line through the column decoder in fig1 ( b ). casbx is connected to the circuit in the logic block in fig1 ( a ). fig4 illustrates another view of the first voltage control circuit and the second voltage control circuit illustrated in fig2 and 3 . as shown in fig4 the circuit has nand gates 111 - 114 and an inverter 115 . rasbx , casbx , and bprst are connected to the input leads of nand gate 111 . bprst is generated from the power on signal generator and keeps the circuit in fig4 in reset state by the time the memory in fig1 ( a ) turns on . when bprst is “ l ,” the circuit in fig4 is in a reset state . when bprst is “ h ,” the circuit in fig4 is in the activated state . the output of the nand gate 113 and the power on signal generator are connected to the input of the nand gate 112 . the outputs of the nand gate 111 and 112 are coupled to the input of the nand gate 113 . the input of the nand gate 114 is connected to the output power on signal generator and the nand gate 113 . the output of the nand gate 114 is connected to the signal line inrst and the input of the inverter 115 . the output of the inverter 115 is connected to the signal line binrst illustrated in fig2 and 3 . the circuits in fig2 and 4 illustrate the first voltage control systems while the circuits in fig3 and 4 illustrate the second voltage control systems . operation of the first and second voltage control systems is illustrated in the timing chart depicted in fig5 . referring to fig5 the signal generator for the power on generates a predetermines voltage during the time period between a predetermined time and the time when the power is turned on . the control signal bprst , generated from the power on signal generator , is “ l ” from the time the power source turns on until time t 1 . after time t 1 , the bprst is “ h ,” as illustrated in fig5 . ( 1 ) the case when the control signal bprst is “ l ”( to time t 1 in fig5 ): the operation of the circuit illustrated in fig4 is split into two parts , when the control signal bprst is “ l ” and when it is “ h .” since one input of the nand gate 111 is set to “ l ,” node 130 serves as the “ h .” the control signal inrst serves as a “ h ” and the control signal binrst serves as “ l .” the transfer gate shown in fig2 and 3 is set to the off position . consequently , rasbi is disconnected to rasbx and casbi is disconnected to casbx . therefore , rasbx is disconnected to the memory block in fig1 and the memory block is unable to perform normal operations ( e . g ., reading and writing modes ). ( 2 ) the case when the bprst is “ h ”( after time t 1 in fig5 ): one of the input leads of nand gate 111 is set to “ h .” when rasbx and casbi are “ h ,” node 120 serves an “ h .” accordingly , node 130 serves as “ l ,” and the transfer gate in fig2 and 3 are set to the on position . consequently , rasbi is connected to rasbx and casbi is connected to casbx . therefore , the memory block carries out normal operations . usually , at the time power is turned on an electronic circuit experiences a high possibility that noise is added to the input signal . if noise does occur and reaches the memory block through a control signal line such as casbx , and rasbx , latch - up can occur . however , using the circuits described in this invention , from the time the power source turns on , to the predetermined time t 1 , the control signal bprst is “ l .” the transfer gate is turned off as illustrated in fig2 and 3 . therefore , this invention prevents abnormal signals generated at the time the power source turns on , from reaching the memory block . therefore , an abnormal signal never reaches the sensitive memory block . an internal circuit in the memory block would be destroyed if an abnormal signal , such as when the power source turns on , reaches the sensitive memory circuitry . this invention prevents the abnormal signal from reaching the memory block and reduces the cost of logic - hybrid memory systems . the second embodiment is similar to the first embodiment . the circuit illustrated in fig2 and 6 show the first voltage control system , while the circuit illustrated in fig3 and 6 show the second voltage control system . fig6 illustrates the first voltage control circuit and the second voltage control circuit as shown in fig2 and 3 . in fig6 the circuit comprises a series of nand gates 10 , 11 , 12 , 13 and 14 and an inverter 15 . a predetermined number of control signal lines if 1 , if 2 , and if 3 are connected to the input of the nand gate 10 . these control signals correspond to the control signal line of the logic block in the logic - hybrid memory in fig1 ( a ). the output of nand gate 10 is connected to the input of the nand gates 11 , 12 , and 14 . the output of rasbx , casbx , and the nand gate 10 are connected to the input of the nand gate 11 . the output of the nand gates 10 and 13 are connected to the input of the nand gate 12 the output of the nand gates 11 and 12 are connected to the input of the nand gate 13 . the input of the nand gate 14 is connected to the output of the nand gates 10 and 13 , and the output of nand gate 14 is connected to the inrst shown in fig2 and 3 , and to the input of the inverter 15 . the output of the inverter 15 is connected to the binrst in fig2 and 3 . the timing chart of the operation of these first and second voltage control systems are shown in fig7 . the operation of the circuit or the timing chart in fig7 describe the circuit where the control signal lines if 1 , if 2 and if 3 are high level ( written as “ h ”) in fig6 while at the same time an abnormal signal is generated . ( 1 ) the case other than if 1 =“ h ,” if 2 =“ h ,” and if 3 =“ h ” simultaneously . at least one of if 1 , if 2 , and if 3 is low level ( written as “ l ”), the potential of node 10 ′ serves as “ h .” not relating to the potential of casbx and rasbx , etc ., the potential of node 20 serves as “ h ”. therefore , the potential of node 30 serves as “ l ,” inrst =“ l ,” and binrst =“ h ”. consequently , when the transfer gate illustrated in fig2 and 3 turn on , rasbx is connected to rasbi , and casbx is connected to casbi . a signal rasbx is transmitted to a row decoder ( not illustrated in figures ), and signal casbx is transmitted to a column decoder ( not illustrated in figures ). ( 2 ) the case if 1 =“ h ,” if 2 =“ h ,” and if 3 =“ h ” simultaneously . when an abnormal signal is generated , since all inputs of the nand gate 10 as shown in fig6 are “ h ,” the potential of the node is “ l .” therefore , since one of the inputs of the nand gate 14 is “ l ,” the potential of node 30 is “ h .” the level of inrst is “ h ,” and the level of binrst is “ l .” the transfer gates shown in fig2 and 3 are set to the off position . consequently , rasbx is disconnected to rasbi . since the pmos transistor 3 is turned on , rasbi is connected to the predetermined potential ( vdd is the precharge voltage ) as shown in fig2 . casbx is disconnected to casbi and since the pmos transistor 3 is turned on , casbi is connected to the predetermined potential vdd as shown in fig3 . this is illustrated in fig7 . when the control signal lines if 1 , if 2 and if 3 are simultaneously set to “ h ,” casbi and rasbi serve as “ h ” and the memory block is in a standby state . rasbx and the casbx do not synchronize , and an abnormal signal is prevented from passing through the rasbi and casbi respectively , even if if 1 , if 2 and if 3 are simultaneously set to “ h .” the rasbx and the casbx are “ h ,” and when the if 1 , if 2 and if 3 are simultaneously set to “ h ” the abnormal signal is prevented from passing through the rasbi and casbi respectively . the second embodiment , like the first embodiment , prevents an abnormal signal from being sent as an input to the semiconductor memory and prevents damaging the semiconductor memory . since the memory operation becomes stabilized , a less expensive system is achieved . if an abnormal signal is prevented from passing through the rasbi and casbi , rasbi and casbi can be given the value equal to the precharge potential vdd when the pmos transistor 3 turns on . accordingly , this allows the semiconductor memory to be in a standby state . the third embodiment of voltage control is illustrated in fig9 . this circuit is similar to the circuit illustrated as shown in fig6 . however , it differs from fig6 where the three inputs of the nand gate 11 are rasbx ′, casbx and the output from nand gate 10 . the signal of rasbx ′ is generated by inputting rasbx into the circuit shown in fig8 . the circuit illustrated in fig8 is used to shape ( widen or narrow ) the width of the signal pulse . the circuit contains an inverter 601 receiving the signal rasbx . the output of the inverter 601 is split with one path becoming one of the input leads to nor gate 606 . the second path passes through the inverter chain 602 , 603 , 604 , and 605 and also becomes one of the leads to the nor gate 606 . nor gate 606 provides the output signal rasbx ′ and becomes the rasbx ′ signal input into nand gate 11 illustrated in fig9 . fig1 ( a ) and 10 ( b ) illustrate the timing chart of the circuit disclosed in fig8 . a signal passing through node b is the output of the inverter chain 602 , 603 , 604 , and 605 . the signal passing through node b is slightly delayed compared with the signal passing through node a . the amount of delay is defined as tdelay . a width of signal pulse rasbx is defined as tpulse . fig1 ( a ) illustrates a waveform representing the case when tdelay & lt ; tpulse which occurs when the memory block is operating normally . the waveform represented in fig1 ( a ) is the waveform of mode a synchronized to rasbx . fig1 ( b ) illustrates the waveform representing the case where tdelay & gt ; tpulse . this event occurs when the circuit in the logic block operates abnormally and produces a narrow width of signal pulse rasbx . the level of node a when compared to the level of node b does not produce an “ l ” simultaneously . therefore , rasbx ′ is fixed as “ l .” consequently , fig9 is provided a signal fixed “ l ” when the width of the signal pulse of rasbx is very narrow . in fig9 when the control signal lines if 1 , if 2 and if 3 are “ h ,” simultaneously , an abnormal signal is assumed generated . ( 1 ) the case if 1 =“ h ,” if 2 =“ h ,” and if 3 =“ h ” “ h ” simultaneously ( generation of an abnormal signal ). since all the input leads of nand gate 10 as illustrated in fig9 are “ h ,” the potential of node 10 is an “ l .” since one of the input leads to nand gate 14 is an “ l ,” the potential of node 30 is an “ h .” therefore , since the level of the inrst is “ h ,” and the level of binrst is “ l ,” then the transfer gates illustrated in fig2 and 3 and turned off . consequently , rasbx is disconnected to rasbi . since pmos transistor 3 is turned on , rasbi is connected to the predetermined potential vdd as illustrated in fig2 . also , casbx is disconnected to casbi . since the pmos transistor 3 is turned on , casbi is connected to the predetermined potential vdd as illustrated in fig3 . when the control signal lines if 1 , if 2 and if 3 are simultaneously set to “ h ” casbi and rasbi serve as “ h ,” and the memory block enters the standby state . ( 2 ) during the time period t 1 until t 2 in fig1 : when the width of the signal pulse of rasbx is very narrow , rasbx is fixed “ l .” at t 1 , an abnormal signal is prevented from passing through transfer gates illustrated in fig2 and 3 . the abnormal signal is also prevented from passing through the transfer gates between t 1 and t 2 . ( 3 ) after time period t 2 in fig1 . when rasbx ′ is changed from “ l ” to “ h ,” inrst is changed to “ l ” and binst is changed to “ h .” at t 2 , the width of the signal pulse of rasbx returns to a normal value and rasbx is connected to rasbi . the third embodiment , the abnormal signal continues to be prevented from passing through the transfer gates illustrated in fig2 and 3 until the width of the signal pulse of rasbx returns to a normal value . when an abnormal signal is prevented from passing through rasbi and casbi respectively , rasbi and casbi can be made into the precharged potential vdd . when the pmos transistor 3 turns on , this causes the semiconductor memory to be in a stand - by state . in the fourth embodiment , a voltage control circuit is illustrated in fig1 . this circuit comprises nand gates 50 , 51 and 52 and inverters 55 and 56 . the control signal lines if 1 , if 2 and if 3 are input into nand gate 50 . nand gate 50 acts as the abnormal signal detection circuit . an inverted signal of a control signal line rasbx and the output of the nand gate 50 are connected to the input terminal of the nand gate 51 . the output of nand gate 51 is connected to the control signal line rasbi . an inverted signal of a control signal line casbx and the output of the nand gate 50 are connected to the input terminal of the nand gate 52 . the output terminal of the nand gate 52 is connected to the control signal line casbi . ( 1 ) the case other than if 1 =“ h ,” if 2 =“ h ,” and if 3 =“ h ” simultaneously . since at least one of the control signal lines if 1 , if 2 and if 3 are “ l ,” node n 51 serves as “ h ”. since one input of the nand gate 51 serves as “ l ,” when rasbx is “ h ” rasbi serves as “ h ”. since one input of the nand gate 51 serves as “ h ” when rasbx is “ l ,” rasbi serves as “ l .” when considering nand gate 52 , the timing chart of casbi is similar to that of casbx . therefore , the state of rasbi and casbi follow the states of rasbx and casbx , regardless of the state of a control signal line ( equal to the node n 51 ), respectively . ( 2 ) the case if 1 =“ h ,” if 2 =“ h ,” and if 3 =“ h ” simultaneously , an abnormal signal is generated . since the potential of the node n 50 serves as “ l ,” rasbi and casbi serve as “ h ” ( precharge potential ), regardless of the states of rasbx and casbx . when an abnormal signal is generated , rasbi and casbi serve as “ h ,” and the semiconductor memory is in a standby state . a timing chart about the operation of the circuit is illustrated in fig1 . fig1 shows when all of the control signals if 1 , if 2 and if 3 are set to “ h ,” the rasbi and the casbi serve as “ h ,” then the memory will be in a standby state . the circuit described in the fourth embodiment is simplified when compared to the first to third embodiments because the transfer gates illustrated in fig2 and 3 are not necessary . the memory block is disconnected to the logic block and the memory block maintains a precharge state until an external circuit ( e . g ., the logic block ) operates correctly from immediately after the power source turns on . although both rasb and casb are intercepted in the middle , this intercept is permitted . however , since there are usually many elements connected to a word line than that connected to a bit line , therefore the fourth embodiment only applies to rasb . in logic - hybrid memory , since a logic circuit ( e . g ., nand gate , or inverter ) in the logic block requires a power source , it is often influenced by noise . this noise can produce abnormal signals that can damage various circuits . therefore , all embodiments described in this invention apply to logic - hybrid memory . please note that while the specification in this invention has been described in relation to certain preferred embodiments , it will be apparent to those skilled in the art that the invention is capable of alternative embodiments and that certain embodiments described in this invention can be varied considerably without departing from the basic scope and principles of the invention .