hereinafter , an embodiment of the present invention is explained according to referring the drawings . a sputtering device 1 according to an embodiment of the present invention is , as shown in fig1 , constituted of at least a vacuum container 3 defining a vacuum space 2 inside thereof , a substrate holder 4 arranged in the vacuum space 2 , a plurality of substrates 5 set on the substrate holder 4 , a target 6 arranged opposite to the substrates 5 , a sputtering cathode 7 installing the target 6 , a shutter plate 8 provided movably between the target 6 and the substrates 5 , and a distribution controlling plate 9 . a vacuum pump not shown in figures is vacuumed through a discharge port 10 connected to the vacuum pump from an inside of the vacuum container 3 to form the vacuum space 2 . besides , a gas introducing port 11 for supplying gas such as argon gas is provided on the vacuum container 3 . the gas introducing port 11 is turn on or off by a valve 12 properly . the substrate holder 4 is constituted of a disc - like rotation carriage 4 a installing the plural substrates 5 , a rotation shaft 4 b supporting the rotation carriage 4 a , and a drive motor 4 c rotating the rotation shaft 4 b . accordingly , the drive motor 4 c rotates the rotation shaft 4 b to rotate the rotation carriage 4 a , so that the plural substrates 5 are revolved . the distribution controlling plate 9 is provided with an opening portion 9 a including substrates &# 39 ; revolution area , and supported by a support pole 9 b so as to have a specific distance to the rotation carriage 4 a of the substrate holder 4 . the sputtering cathode 7 has a rotation shaft b which is eccentric to a center axis a of the target 6 . an electrode base 13 is provided around the rotation shaft b and an earth shield 14 is provided around the electrode base 13 via an insulation member 15 . furthermore , magnets 20 are insulated from the vacuum space and arranged in a rear surface of a base holder 16 which installs the target on a front surface thereof , and cooling water is supplied to the back surface of the base holder 16 via an intake 17 a for introducing the cooling water and an outlet 17 b for discharging the cooling water in order to prevent heat of the target 6 from increasing . besides , the electrode base 13 is connected with one end of a sputtering power source 18 and the vacuum container 3 is connected with another end of the sputtering power source 18 . besides , the sputtering power source is a dc power source or a high - frequency power source . furthermore , the sputtering cathode 7 can be rotated by a driving motor 19 . the shutter plate 8 is supported at a specific position by a rotating support shaft 8 a , and opens or closes a front surface of the target 6 by a driving motor 8 b . besides , as the shutter plate 8 is connected with the vacuum chamber 3 electrically , the pre - sputtering can be operated by positioning the shutter plate 8 in front of the target 6 , and further , starting or stopping of the sputtering operation can be controlled by opening or closing the front surface of the target 6 . in the sputtering device 1 having the above constitution , because the rotation shaft b is arranged to the center axis a of the target 6 eccentrically , it is possible that the target 6 rotates within the extent of revolving of the substrate 5 facing to the target 6 . accordingly , a plurality of the substrates 5 are revolved at a specific speed by rotating a rotation table 4 a of the substrate holder 4 and the sputtering cathode 7 is rotated at a specific speed to revolve the target 6 to the substrates 5 , so that the sputtering can be operated . besides , a plurality of the substrates 5 are revolved at a specific speed by rotating the rotation table 4 a of the substrate holder 4 and the sputtering cathode 7 is rotated and stops at a specific position to the substrates 5 to sputter the substrates at a specific time , and then , the sputtering cathode 7 is rotated to change its position again , so that the sputtering to the substrates can be carried out again . accordingly , when the target 6 is positioned at the most outer end in a radial direction of the rotation carriage 4 a by rotating the sputtering cathode 7 as shown in fig2 ( 6 a ), sputtering particles sputtered form the target 6 reach to the substrate 5 in a direction slant from the outer side to the inner side in the radial direction of the rotation carriage 4 a as shown in fig3 . besides , when the target 6 is positioned at the most inner end in a radial direction of the rotation carriage 4 a by rotating the sputtering cathode 7 as shown in fig2 ( 6 c ), the sputtering particles sputtered form the target 6 reach to the substrate 5 in a direction slant from the inner side to the outer side in the radial direction of the rotation carriage 4 a as shown in fig4 . furthermore , when the target 6 is located at the position indicated by 6 b or 6 d , sputtering is carried out to the substrate 5 from a right overhead thereof . thus , as a angle of incidence of the sputtering particles to the substrate 5 can be varied by rotating the sputtering cathode 7 , a good distribution of the film thickness and a good coverage distribution can be gained . moreover , as shown in fig2 , a rotational direction e of the sputtering cathode 7 is operated so as to correspond to a rotational direction d of the rotation carriage 4 a in an outer position in the radial direction of the rotation carriage 4 a , so that a relative speed between the target 6 and the substrate 5 can be decreased because the target 6 and the substrate 5 are moved in the same direction at the outer position in the radial direction of the rotation carriage 4 a whose moving speed is high , and the relative speed between the target 6 and the substrate 5 can be increased because the target 6 and the substrate 5 are moved in the opposite direction at the inner position in the radial direction of the rotation carriage 4 a whose moving speed is low , as a result , even adhesion of the sputtering particles can be achieved .