as a first embodiment according to the present invention , fig1 shows substrate treatment apparatus employing an electrostatic adhering circuit for fixing a substrate 1 to a substrate holding system 9 . in fig1 a microwave plasma etching apparatus is used for treating the substrate 1 . a substrate holding system 9 mounting the substrate 1 is placed in an etching chamber 10 . the etching chamber 10 is exhausted using a vacuum pump 11 , and a gas for etching is supplied from a gas supply unit . the substrate holding system 9 is connected to a high frequency power source 12 and a direct current power source 13 . microwave energy is introduced into the etching chamber 10 from a quartz glass window 15 through a waveguide 14 . when the high frequency power source 12 is switched into operation or the microwave is introduced , a plasma 16 is produced in the etching chamber 10 . at that time , an electrostatic adhering circuit 17 is formed by the potential of the direct current power source 13 through the substrate holding system 9 , the substrate 1 , and the plasma 16 . in this state , the substrate 1 is fixed to the substrate holding system 9 , that is , fixed by the electrostatic force produced in the substrate holding system 9 . fig2 shows a cross - section of the substrate holding system 9 in fig1 . a substrate 1 is mounted on protruding portions 3 and 20 of a holding member 2 for holding the substrate , the protruding portion 3 of the holding member 2 being connected in the electrostatic adhering circuit 17 , the substrate 1 being fixed to the holding member 2 at the portions 3 and 20 . a flow passage for supplying a coolant 4 is provided in the holding member 2 to cool the substrate 1 . the coolant is supplied from a supplying unit to an inlet portion 5 , schematically illustrated , and flows out from an outlet portion 6 to control the temperature of the holding member 2 . further , a flow passage for a cooling gas 7 is provided in the center of the holding member 2 to supply and exhaust the cooling gas 7 . the temperature control of the substrate 1 is attained by the cooling gas 7 which flows into the indented portion 8 of the holding member 2 so as to perform a heat transfer between the holding member 2 and the substrate 1 . the electrostatic adhering force is generated by a dielectric material 18 attached to or formed on the surface of the holding member 2 . aluminum oxide , or mixture of aluminum oxide added to titanium oxide , may be used as the dielectric material 18 . a voltage of several hundred volts is applied to the holding member as a direct current voltage for generating the electrostatic force . therewith , the substrate is electrostatically fixed to the protruding portion 3 of the holding member 2 shown in fig2 . the electric potential for electrostatic adhering is applied from the direct current power source 13 , the potential being uniform over the holding member 2 , over the protruding portion 3 and over the outer periphery of the substrate 1 . therefore , the potential difference produced over the surface of the substrate 1 is caused by the distribution of electrons or ions irradiated on the substrate 1 , and is not so high that the potential difference may cause damage to the substrate 1 . on the other hand , in a method where positive and negative electric poles are formed in the holding member 2 to cause the substrate to adhere electrostatically with the electric poles , there is a possibility that a high voltage difference in the substrate 1 will give rise to damage to the substrate . then , the cooling gas 7 is supplied to the back surface of the substrate 1 fixed in such a manner . the cooling gas 7 fills in the indented portion 8 of the holding member 2 , the pressure being within the range of several torrs to several tens of torrs . when the gap of the indented portion 8 is 15 μm to 0 . 1 or 0 . 2 mm , a decrease in the cooling efficiency can be neglected . that is , the gap needs to be larger than 15μ when the existence of particles or the roughness of surface is considered , and the upper limit of the gap is 0 . 2 mm when the thermal conductance of the gas is considered . it can be considered that the electrostatic adhering force is nearly zero over the indented portion 8 where there is a gap , and is generated only over the protruding portion 3 . however , since it is possible to set the adhering force strong enough to endure the pressure of the cooling gas 7 by properly setting the voltage of the direct current power source 13 , the substrate 1 is not moved or separated by the cooling gas 7 . the temperature of the holding member 2 is controlled by the coolant 4 . therefore , the molecule of the cooling gas 7 cooled on the surface of the indented portion 8 of the holding member reaches the substrate 1 directly or after any number of collisions with other molecules of the cooling gas . the molecule of the cooling gas which has reached the substrate 1 receives energy from the substrate 1 , that is , cools the substrate 1 , returning again to the holding member to transfer the heat it carries thereto . by repeating this cycle , the substrate 1 is cooled . in the case where the pressure of the cooling gas 7 is sufficiently higher than the pressure which establishes the mean free path corresponding to the gap at the indented portion 8 , it becomes a dominant phenomenon that the gas molecules collide and exchange energy with each other to carry the thermal energy in the substrate 1 to the cooling surface of the holding member 2 in addition to the above - described phenomenon of the gas molecules . however , the thermal energy transport within the range of the present invention involves heat conduction through the cooling gas 7 as a thermal medium . in other words , it is not the phenomenon where , for example , the cooling gas 7 is cooled using a cooling unit separately provided in advance and is supplied to the back surface of the substrate 1 to cool the substrate with the heat capacity of the gas itself . rather , the gas merely acts as a transport medium for the thermal energy . the gap of the indented portion 8 and the pressure of the cooling gas 7 satisfying the above condition are chosen . the ratio of energy transport between the cooling gas 7 and the holding member 2 is expressed by a value referred to as a thermal adaptation factor . the thermal adaptation factor depends on the kind of cooling gas and the surface condition of the member ( state of contamination etc .). the same can be applied to the heat transfer between the substrate 1 and the cooling gas 7 . helium is used as the cooling gas 7 because helium does not affect the etching characteristic when it leaks , and because the supplying or exhausting time for the cooling gas 7 is shorter than for other gases . however , other gases , such as nitrogen , argon , and an etching gas may be used , although the cooling efficiency is changed . the cooling gas is not specially limited to these examples . as described above , the substrate 1 is sufficiently cooled through use of the cooling gas . further , the substrate contacts to the holding member 2 only at the protruding portion 3 . accordingly , foreign substances produced by contacting the back surface of the substrate to another member are likely to attach only to the portions on the back surface of the substrate corresponding to the protruding portion 3 . in a case where the substrate 1 has a larger area than the holding member 2 and a part of the surface of the holding member sticks out beyond the edge of the substrate 1 shown in fig2 plasma is irradiated on the exposed projecting surface to etch that surface and the etching reaction products from the substrate 1 are attached to the projecting surface . thereby , foreign substances attach to the top side surface of the substrate 1 through the sticking surface . this is the reason why the diameter of the holding member 2 is smaller than the diameter of the substrate 1 . however , the effect of decreasing foreign substances on the back surface according to the present invention is not degraded even when the diameter of the holding member 2 is larger than the diameter of the substrate 1 . fig3 shows another form of the substrate holding system 9 according to the present invention . although the embodiment in fig3 is basically the same as that in fig2 the embodiment in fig3 has a pusher 19 for transferring the substrate 1 . the substrate 1 is transferred from the holding member 2 by moving the pusher 19 upward and downward . the pusher 19 has to be moved upward and downward for every treatment . that is , the pusher needs to be moved independently of the holding member 2 . therefore , there is a need to provide a gap between the holding member 2 and the pusher 19 . the cooling gas 7 leaks through the gap . the leakage amount of cooling gas 7 needs to be suppressed as much as possible . in order to realize this , an inner side protruded portion 20 having a surface nearly the same height or the same height as that of the protruding portion 3 is provided around the pusher 19 . since the surface is flat and contacts the substrate 1 , the leakage amount of the cooling gas can be suppressed within an allowable amount . the reasons why the pusher is provided in the center of the protruded portion 20 are the following three . ( 2 ) for exhausting the foreign substances produced at the pusher portion with the gas flow , and the occurrence of an abnormal discharge depends on the kind of gases used , the pressure of the environment , the gap distance applying voltage and the voltage . in a case where the pusher is placed , for example , in a cooling gas environment , the gap distance applying voltage needs to be 0 . 16 to 0 . 2 mm , when the pressure of the cooling gas environment is 8 to 10 torrs ( mhg ) and the voltage for electrostatic adhering is 450 to 700 v . however , forming such a gap is difficult . in the case of the embodiment according to the present invention , the pressure of the environment containing the pusher 19 can be made very much lower than the pressure at which discharge is easy to occur , and an abnormal discharge can be prevented from occurring even when the pressure of the environment containing the pusher 19 is higher than the pressure in the etching chamber of 3 to 5 mm torrs by the pressure difference for increasing conductance , for example , 10 mmtorrs ( 1 / 10 2 mmhg ) and the gap distance is approximately 1 mm . fig4 is a view of the substrate holding system 9 in fig3 for removing the substrate 1 , looking down from an upper side . a feeding and exhausting hole 21 for the cooling gas 7 is provided in the center of the holding member 2 , and the pushers 19 and the inner side protruding portions 20 are arranged around the feeding and exhausting hole 21 . the inner side protruding portions 20 also serve as supports against the bending of the substrate 1 . although the inner side protruding portion 20 is round - shaped in fig4 the shape is not limited to a round - shape . fig5 shows an embodiment of a substrate holding system 9 which is ring - shaped . there are provided in the ring - shaped protruding portions 22 a temperature sensor 23 for the substrate 1 , a substrate detecting sensor 24 for detecting the existence of the substrate , an earth terminal 25 for bringing the potential of the substrate 1 to earth potential , in addition to the pusher 19 . in order to perform speedy feeding and exhausting of the cooling gas 7 to the indented portion 8 , parts of the ring - shaped protruding portion 22 are cut away to allow the cooling gas 7 to pass through the parts easily . in an apparatus using plasma , employing a fluorescent thermometer as the temperature sensor 23 eliminates the problem of noise . an example of a substrate detecting sensor 24 is an optical fiber through which a laser beam is introduced to irradiate the back surface of the substrate 1 . the presence of the substrate 1 is detected by the existence of reflected light . since the output of the temperature sensor 23 changes depending on the presence of the substrate 1 , the change can be used in detecting presence of the substrate 1 . the earth terminal is used before pushing up the substrate 1 , which has been electrostatically fixed , by using the pusher 19 . while there remains an adhering force on the substrate 1 which has been electrostatically fixed , the pusher 19 cannot be used . therefore , in order to shorten the waiting time , there are some cases where the substrate 1 is required to be grounded . by moving the earth terminal 25 upward and downward so as to contact the substrate 1 , the potential of the substrate 1 is neutralized . although the earth terminal 25 is made of an electrically conductive material , it is effective to employ silicon carbide having a much larger resistivity than general metals to avoid an abnormal discharge during plasma treatment . further , it is possible that the function of grounding may be incorporated in the pusher 19 . although various kinds of sensors are arranged on a single holding member in fig5 the sensors can be used separately without degrading the object of the present invention . by employing the substrate holding system 9 according to the present invention , the amount of foreign substances attaching to the back surface of the substrate 1 is decreased . further , by holding the substrate 1 during treatment using the substrate holding system , it is possible to prevent foreign substances carried on the back surface from attaching to the top surface of another adjacent substrate , which could contaminate the substrate by foreign substances melted or detached from the back surface . fig6 shows a further form of the substrate holding system 9 according to the present invention . the holding member 2 has island - shaped protruding portions 22a , 22b arraying concentrically . in this embodiment , a substrate is supported with three concentric portions , the protruding portion 3 in the peripheral area , and the island - shaped protruding portions 22a and 22b . this configuration is especially effective when the diameter of the substrate 1 is large . fig7 shows another embodiment according to the present invention . fig7 is a detailed cross - sectional view showing a substrate holding system 9 of a microwave plasma etching apparatus to be described later . an insulating film for electrostatic adhering is coated on the top surface of a head portion 61 . a weir 62a for contacting and fixing a substrate 1 is provided at the periphery of the substrate , and a weir 62b and a weir 62c are provided inwardly of the weir 62a . a hole 66 penetrating to the back surface of a mounting table is provided in the center of the weir 62c . a space 64 for containing coolant is provided inside the head portion 61 , and a passage capable of feeding and exhausting the coolant is provided in communication with the space 64 . a shaft 63 secured to the head portion 61 is provided near the center of the substrate holding system 9 , and a guiding passage for introducing cooling gas is provided inside the shaft . a pusher mechanism 65 for transporting a substrate is provided in engaging relationship with the hole 66 described above . a cover 67 is placed in the outer peripheral portion of the penetrating hole 66 on the back of the mounting table . a susceptor 68 serves as a cover for head portion 61 to protect the head portion 61 during etching and to insulate the side surface of the head portion from the surrounding electrical space . in a case where a substrate 1 ( wafer ) is treated in the embodiment in fig7 the substrate 1 is introduced into a treating chamber using loading means ( not shown ) under a vacuum condition , the substrate 1 is mounted on a mounting table 9 having its temperature controlled in advance with a coolant , current is supplied to an electromagnetic coil 4a ( see fig1 ) to form a given magnetic field , a treating gas is introduced , current is supplied to a magnetron to generate microwave energy , the gas is turned into a plasma in the treating chamber by ecr ( electron cyclotron resonance ), and a dc circuit is formed by the plasma to produce an electrostatic adhering force . then , a cooling gas is caused to flow between the substrate 1 and the mounting table 9 . the cooling gas rapidly diffuses inside the gap , except for contact portions thereby transferring the heat entering from the plasma into the substrate 1 ( wafer ) to a head portion of the holder by way of the coolant . in order to extend the cooling effect up to the vicinity of the outer periphery of the substrate , the cooling gas is leaked to the treating chamber through the outer periphery of the substrate . at the same time , the cooling gas is exhausted to the back of the mounting table as an excess gas through a penetrating hole 66 having a dimensional relationship so as to leak the cooling gas actively . since the gas between the substrate and the mounting table needs to be maintained above a given pressure , gas is always supplied in an amount corresponding to the leaked amount . according to the embodiment , it is possible to provide a plasma treating apparatus in which the amount of foreign substances transferred to the back surface of a substrate is decreased by decreasing the contact area between the substrate and the holder while maintaining the cooling gas pressure required for cooling , and which has a good repeatability as a production apparatus , being capable of treating a substrate with plasma under a condition of controlling the substrate temperature , and having excellent productivity . further , it is possible to provide a plasma treating apparatus in which the foreign substances produced in the pusher portion are transported to the opposite side of the substrate by exhausting the excess cooling gas to the back of the mounting table ( opposite side of the substrate ) to decrease the amount of foreign substances attaching to the substrate ; and concurrently , the gas is exhausted inside a cover provided on the back of the mounting table in the treating chamber to keep the pressure inside the cover higher than the pressure in the treating chamber and to prevent the reaction products from attaching to the mechanisms of the mounting table , and of which the characteristic is small time - varying . helium is generally used as the cooling gas here . although in the present invention the cooling gas leaks into the treating chamber by several ccm ( cubic centimeter per minute ) to 10 ccm , it has been confirmed by experiment that the leakage amount does not affect the process , since the amount is 1 / 100 to 1 / several tenths of the supplied amount of process gas . although the present invention has been described in each of the above embodiments while taking substrate cooling into consideration , it is understood that there is no substantial difference in a case of heating a substrate , since the only difference is that the temperature of the holding member is kept higher than the temperature of the substrate . according to the present invention , a substrate can be certainly cooled and at the same time the amount of foreign substances attached to the back surface of the substrate can be decreased . further , the amount of foreign substances attached to the top surface of the substrate also can be decreased since the substrate is fixed using electrostatic adhesion and there is no need to use any substrate fixing hardware which will contact the substrate on the top surface of the substrate . furthermore , substrate treatment on the top surface of a substrate can be performed throughout the surface of the substrate since there is no obstacle , such as substrate fixing hardware . therewith , the yield of production in substrate treatment can be improved by decreasing the amount of foreign substances on the back surface . the yield of production can be further improved and the number of device chips obtained from a single substrate also can be increased by decreasing the amount of foreign substances attached to the top surface of the substrate . damage to the substrate such as results from use of a conventional electrostatic adhering electrode is not caused in the present invention , which improves the yield of production . another embodiment of the present invention will be described in detail below , referring to the drawings . fig9 shows another embodiment in accordance with the present invention . in fig9 a substrate 1 is held on a dielectric material 18 formed on a holding member 2 . under the holding member 2 , an insulating member 40 and a base 41 are placed and supported with a shaft 63 . in the holding member 2 , a coolant flow passage 42 for conducting a coolant to control the temperature of the substrate 1 is formed . in order to supply the coolant to the coolant flow passage 42 , a through hole penetrating through the base 41 and the insulating member 40 is provided and a coolant supply portion 43 is also provided . a pusher 19 is inserted in a through hole penetrating through the holding member 2 , the insulating member 40 and the base 41 , the side surface of the through hole being formed of an insulating pipe 44 . the pusher 19 is guided with a guide 45 provided around the shaft 63 , being moved in the direction of the shaft 63 with an upward and downward drive mechanism , which is not shown in the figure , to transport the substrate 1 . a high frequency supplying shaft 47 is installed inside the shaft 63 through an insulating material 46 , the high frequency supplying shaft 47 being pipe - shaped , and the inside of the high frequency shaft forms a substrate cooling gas feeding hole 21 . the insulating material 46 penetrates from the base 41 to the insulating member 40 . the high frequency supplying shaft 47 penetrates from the insulating member 40 to the holding member 2 , one end ( lower side in fig9 ) of the high frequency supplying shaft 47 being connected to a high voltage power source , which is not shown in the figure , for applying a high voltage to hold the substrate 1 to the dielectric material 18 by electrostatic adhesion and to a power source for applying a high frequency bias to the substrate 1 . a substrate detecting sensor 24 for detecting the presence or absence of a substrate by detecting the temperature of the substrate is installed in fig9 . in this position , a substrate detector which operates to detect cooling gas pressure instead of detecting the substrate temperature may be also employed . in this case , the pressure sensor is placed at the top end of the pin in the substrate detecting sensor 24 , and an output signal wire from the pressure sensor is passed through the inside of the pin to be connected to a signal processor . since the pressure in the space around the top end of the pin in the substrate detecting sensor 24 is high when a substrate is present and is low when a substrate is absent , the signal processor detects the presence or absence of the substrate by judging whether or not the pressure signal from the pressure sensor exceeds a value corresponding to a preset pressure . a susceptor 36 serving as a cover for the dielectric material 18 and the holding member 2 is placed on the outer peripheral portion of the substrate 1 to cause the gas flow for substrate etching to be uniform . the inner peripheral surface of the susceptor 36 is perpendicular to the back surface of the substrate 1 . the susceptor 36 is formed of an electrically insulating material , such as alumina , covering the outer surrounding surface of the holding member 2 , the insulating member 40 and the base 41 . the substrate holding system shown in fig9 is used in , for example , a plasma environment as shown in fig1 . fig1 is an enlarged cross - sectional view of the peripheral portion of the substrate 1 . although fig1 is a schematic view of a microwave plasma etching apparatus , explanation will be made below on a case where the substrate holding system according to the present invention is applied to an etching apparatus . the vacuum chamber 27 is connected to another vacuum chamber to load and unload the substrate 1 from and into the atmospheric environment through a valve . the substrate 1 loaded into the vacuum chamber 27 through the substrate loading mechanism is transported at a transporting level indicated by a two - dot chain line in fig1 . therefore , the substrate holding system 9 is lowered to the transporting level . the substrate 1 is transported to and mounted on the dielectric material surface 18 by moving the pusher 19 upward and downward at this level . the coolant to control the temperature of the substrate 1 is introduced into the coolant flow passage 42 from the coolant supply portion 43 through a coolant temperature controller which is separately provided and the coolant is recirculated in the coolant flow passage to control the temperature of the holding member 2 and the dielectric material 18 at a given temperature . when the substrate 1 is mounted on the substrate holding system 9 , a laser beam introduced from the substrate detecting sensor 24 is reflected on the back surface of the substrate , the reflected light being detected as a signal which confirms the mounting of the substrate 1 . the temperature of the substrate is started to be detected using a substrate temperature detector ( fluorescent thermometer ), which is not shown in fig9 installed in the same manner as the substrate detecting sensor 24 . when the etching gas 48 is supplied and the microwave energy is introduced , from the microwave generator 26 through the wave guide 14 discharging is started . in this state , a direct current for electrostatic adhesion is supplied from the direct current power source 13 , an electric circuit for electrostatic adhesion is formed through the plasma 16 , and the substrate 1 is attracted to the dielectric material 18 . then , when helium gas is supplied from the gas feeding hole 21 , substrate temperature control through the helium gas is carried out . in this state , since the preparation for etching is completed , etching is started by setting the microwave at a given value and applying the high frequency voltage . after completion of the etching treatment , supply of the high frequency voltage is stopped . at this time , the plasma still remains . that is , the substrate is still attracted electrostatically . the supply of etching gas is stopped and a , non - etching gas , such as argon gas , instead of the etching gas , is introduced , depending on the situation , to remove the charge accumulated during electrostatic adhering . in the meanwhile , the supply of helium gas is stopped , and the force to lift up the substrate 1 from the back surface of the substrate 1 is not applied . after completion of discharging , the supply of argon gas is stopped , and the direct current for electrostatic adhesion is stopped . after exhausting the etching gas and the gas for discharge to achieve a high vacuum state , downward movement of the substrate holding system 9 and the process for unloading the substrate 1 are started . the unloading process is performed in the inverse process of the loading process . a new substrate is loaded for the next etching . then , etching is carried out in the same manner as above . although the reaction products ( gas ) produced by the etching gas and etching on the surface of the substrate is distributed in an approximately uniform density over the surface of the substrate 1 , the etching characteristic in the peripheral portion may be different from that in the central portion since in the outer peripheral portion of the substrate the portion to produce the reaction products does not exist outside the substrate and the flow boundary of gas flow abruptly changes . therefore , in accordance with the present invention , the susceptor 36 is placed approximately at the same level as the substrate 1 to prevent any abrupt change in the gas flow . the flow of the etching gas and the reaction products is directed slightly upward due to the existence of the surface of the susceptor 36 , and a stagnant effect of the etching gas and the reaction products takes place and causes a phenomena as if there is an etching reaction portion in the outer peripheral portion of the substrate . therefore , etching is uniformly performed in the peripheral portion of the substrate . in addition to the above , there is an effect that , since the periphery of the substrate 1 is in a state of being contained in the susceptor 36 and the side wall 36a of the susceptor 36 restricts the substrate 1 from shifting to any significant extent , it is possible to avoid the situation where the substrate cannot be transported and the vacuum of the etching chamber has to be broken even when the electrostatic adhering force is removed with some abnormal state and the substrate 1 is moved by the pressure of the helium gas supplied to the back surface of the substrate 1 . at this time , the substrate 1 does not ride on the horizontal surface of the susceptor 36 even when the substrate 1 slides , because the inner surface 36a of the susceptor 36 facing the outer peripheral surface of the substrate 1 is nearly vertical . this case is different from a case where the surface of the susceptor 36 is taper - shaped . description will be made below on the gap between the back surface of the substrate 1 and the susceptor 16 . on the substrate etching surface side , the plasma 16 is generated and the etching gas and the reaction products are flowing . therefore , when there is a gap between the back surface of the substrate 1 and the susceptor 36 , the etching gas and the reaction products enter into the gap and are accumulated in the back surface of the substrate . they form foreign substances . this is not desirable , because the product yield of the etching process decreases . on the other hand , when the gap between them is decreased so as to be as small as possible , the etching gas and the reaction products are decreased to enter the gap and the foreign substances accumulated in the back surface of the substrate can be deceased . according to the result of another experiment , the effect described above has been effective when the gap is less than 0 . 3 mm . the etching treatment is performed while applying the high frequency voltage to the substrate 1 . at this time , there are some cases where an abnormal discharge takes place between the holding member 2 to which the high frequency voltage is directly applied and the base 41 . when the abnormal discharge occurs , the high frequency voltage is not correctly applied to the substrate 1 , and the etching itself becomes abnormal . this is not limited to etching , but can be said generally of the type of substrate treating apparatus in which plasma is generated using a high frequency voltage . in order to prevent such phenomena , in the substrate holding system according to the present invention , the base 41 , being at a different electric potential from the high frequency voltage applied portion , is specially isolated by inserting the insulating pipe 44 . thereby , the abnormal discharge can be prevented . description will be made on transportation of the substrate 1 . charge is accumulated on the substrate 1 while it is electrostatically fixed on the holder . the charge has the capability of adhering the substrate 1 to the dielectric material 18 , and so the substrate 1 is electrostatically attracted to the dielectric thin film even when the direct current power source 13 for electrostatic adhesion is switched off . therefore , transportation of the substrate 1 has to be delayed until the accumulated charge disappears . there is an additional problem of determining whether the accumulated charge is present or absent . in order to solve this problem , the pusher 19 is made of a material having a small conductivity , such as silicon carbonate , as shown in fig1 . by doing so , the accumulated charge flows to a grounded line through the pusher 19 to cause the charge to disappear . thereby , the problem of transporting the substrate can be avoided and a reliable substrate transportation can be realized . the grounded circuit connected to the pusher 19 may be disconnected during generation of the plasma . it is preferable to employ this technique when the grounded line and the high frequency applied portion are placed near each other and an abnormal discharge takes place . although the substrate 1 is transported with upward / downward movement of the pusher 19 , an abnormal state occurs if the substrate is vibrated during transporting . therefore , the pusher 19 has to move smoothly . in order to guide the pusher with certainty , in accordance with the present invention , the guide 45 is provided on the shaft 63 . by doing this , the length of the pusher 19 does not become excessively long and a highly reliable transportation can be realized . as described above , the elements of a highly reliable substrate holding system have been explained . description will be made below on the solution of the problem in a case where the substrate transporting level is different from the level of the substrate treating position ( the substrate position corresponding to the position illustrated in fig1 ). fig1 shows the comprehensive construction of a substrate holding system . the upper portion of the system is nearly the same as in fig9 . the main difference from fig9 is that the outer side surface of the holding member 2 applied with the high frequency voltage is covered with an insulating member 40 . by doing so , the distance between the portion to which the high frequency voltage is applied and the grounded portion becomes long and the preventive effect against abnormal discharge can be improved . in order to travel upward and downward between the substrate transporting position and the substrate etching position , a bellows 50 is provided between the shaft 63 of the substrate holding system and the flange 49 in the present invention . the bellows 50 also serves as a vacuum seal between the atmosphere and the etching chamber and is extended with a guide for the shaft 63 and an upward and downward drive mechanism installed in the atmospheric environment , which are not shown in fig1 . in accordance with the present invention , the bellows is placed between the shaft 63 and the flange 49 to minimize the diameter of the bellows 50 . when the diameter of the bellows 50 is small , the force loaded on the substrate transporting mechanism is also small and consequently it is easy to make the upward and downward drive mechanism simple and highly accurate . it is needless to say that the foreign substances produced by abrasion in the sliding portion are eliminated and the reliability of the vacuum seal is improved in comparison to a case of employing a sliding portion using an elastomer seal . although by employing such a construction the substrate holding system is moved upward and downward , exposure of the bellows 50 , the shaft 63 , and the pusher 19 to the plasma is not preferable from the point of view of foreign substances formed by attached etching products or the plasma resistivity of the materials . therefore , in the present invention , cylindrical covers 67a and 67b engaging with each other are provided on the base 41 and on the flange 49 . the covers 67a , 67b engage with each other and have such dimensions that the contact is maintained even when the substrate holding system moves upward and downward . the covers 67a and 67b are kept at a grounded electric potential , and so the members inside the covers are always isolated from the plasma so as to be protected from contamination . as described in the above embodiment , according to the present invention , a substrate holding system and a method of holding a substrate having less foreign substances and which is capable of performing uniform etching can be attained . it is understood that the present invention is not limited to the described etching apparatus , but is widely applicable to various substrate treating apparatus and treating holding of a substrate ( treated object ) with electrostatic adhesion . in looking at fig9 or fig1 from the point of view of manufacture of the substrate holding system , it is difficult to manufacture the holding member 2 since it has the coolant flow passage . as a matter of course , it is possible to obtain a member having the same effect by manufacturing the holding member 2 by dividing it into two parts through machining , as shown in fig9 jointing the parts to each other , and sealing the coolant using an elastomer seal . however , in this case , there arise such problems as an increase in complexity and a decrease in reliability due to extra jointing portions or extra volume being required , since a sealing surface 55 is required , and a seal is required in each hole of the parts when a through hole ( for example , the hole inserted with the insulating pipe 44 in fig9 ) is provided in the holding member 2 , as shown in fig9 . therefore , the present invention employs a manufacturing method where the holding member 2 is formed in a one - piece structure . in the present invention , a lost wax technique is employed as a method to solve this problem . fig1 shows this embodiment . first , a member 51 having the same shape as the coolant flow passage 42 is fabricated using wax . next , a mold having the same shape as the outer shape of the holding member 2 is prepared , the flow passage mold made of wax being placed inside the mold , and then casting is performed . after removing the wax , the holding member 2 is completed . fig1 and fig1 show another embodiment according to the present invention . in this embodiment , a metallic member 52 , which is machined to form the coolant flow passage 42 in advance , and a holding member 53 are coupled with each other through a jointing material 54 . when the holding member is made of aluminum or an aluminum alloy , an aluminum alloy having a low melting temperature ( for example , a silicon contained aluminum alloy ) is used for the jointing material 54 . then , the members 52 , 53 are heated up to approximately 600 ° c . in a vacuum environment with pressing , the jointing material 54 having a low melting temperature being melted and reacting with the metallic members 52 and 53 to be jointed to each other . since the sealing surface 55 shown in fig1 can be certainly jointed by employing the diffusion welding method , the through hole 66 can be made without any special consideration . since in the welding process many sets of members , not limited one set , can be welded at a time , there is no problem in cost performance by manufacturing a lot of the metallic members 52 , 53 in advance and welding them at the same time . as described above , according to the present invention , since substrate holding by electrostatic adhesion can be certainly preformed without using a member , such as a weight , on the substrate surface for preventing sliding during substrate transporting or for preventing lift - up due to gas pressure on the back surface of the substrate , there is an effect that production of foreign substances during substrate etching can be decreased and the production yield of the substrate can be expected to be improved . further , since the operable period between cleaning services of the substrate etching apparatus for removing the foreign substances is lengthened , there is an effect that the operability of the apparatus can be expected to be improved . furthermore , since the surface of the outer peripheral portion of the substrate is nearly at the same level as the surface of the substrate in order to make the gas flow in the surface of the substrate uniform , there is an effect that the substrate etching can be performed with excellent uniformity over the surface . still further , since no elastomer seal is required for coolant sealing in forming the substrate holding system , there is an effect that the substrate holding system can be easily manufactured .