the invention will be understood more fully from the detailed description given below , which however , should not be taken to limit the invention to a specific embodiment , but is for explanation and understanding only . a first method of the invention is a method of manufacturing an integrated circuit including the steps of : ( 1 ) providing a wafer having an inter - level dielectric film and a barrier layer ; ( 2 ) depositing a seed layer of copper on the barrier layer ; ( 3 ) electroplating copper to a thickness sufficient to fill in any valleys in the inter - level dielectric film and cover an entire top surface of the wafer ; ( 4 ) chemical mechanical polishing the top surface to remove i ) any excess portions of copper caused by the electroplating and ii ) selected portions of the inter - level dielectric film ; ( 5 ) depositing a layer of cro on the polished top surface to cover remaining portions of the copper ; ( 6 ) depositing a passivation layer on the layer of cro and portions of the inter - level dielectric film ; and ( 7 ) etching the passivation layer to form a via that exposes a selected portion of the layer of cro . preferably , the inter - level dielectric is an inorganic compound , such as silicon oxide , silicon nitride , silicon oxynitride , or mixtures thereof , or an organic compound . particularly preferred is an inter - level dielectric layer having sio 2 . the barrier layer is preferably ta , tan , tin , ti , w , wn , tisin , tasin , or mixtures thereof the barrier layer may be backsputtered before the seed layer is deposited to improve adhesion of the seed layer . sputtering is the preferred method to deposit the seed layer of copper , but it may also be deposited by chemical vapor deposition . after electroplating the copper , the chemical mechanical polishing removes any excess copper and the selected portions , such as the highest spots of the inter - level dielectric film , so that what remains are vias and / or trenches that are filled just to the top . the layer of cro may be deposited either by sputtering cr in the presence of o 2 or by evaporating cr in the presence of o 2 . if these processes are utilized , then the cro must be patterned using lithography to remove the cro on the inter - level dielectric film . alternatively , the layer of cro may be deposited by autocatalytic plating . the resulting cro layer covers the copper . in practice , an overhang head is likely to be used to completely cover all of the copper edges . the preferred thickness of cro depends on the mechanical properties of the layer of cro , which in turn depends upon the particular process used to deposit the layer of cro . the preferred thickness for common depositions is about 150 - 600å and particularly preferred is an optimum thickness of about 300å . chromium adheres well to copper , thus preventing electrotransport of copper at the top surface . in this invention , oxidation of the copper surface is prevented up to about 400 ° c . copper oxide is detrimental because it greatly increases contact resistance and causes subsequent layers to have very poor adhesion . the passivation layer maybe silicon dioxide , silicon nitride , silicon oxynitride , doped versions of these materials , or mixtures thereof typical dopants are fluorine and boron . the passivation layer is preferably deposited by chemical vapor deposition , but may also be deposited by a spin - on dielectric glass or polymer process or a combination of these processes . the passivation layer is etched to form a via that exposes a selected portion of the cro layer to either enable wire bonding , or solder bumping , to the top level of metal or to enable the next level of metal to contact the lower levels of metal . the selected portion exposed is dependent upon the area necessary for wire bondings , solder bumping , or deposition of the next level of metal . a portion of a multi - level interconnect structure manufactured in accordance with the first method is shown in fig1 . the integrated circuit includes a wafer 1 having a surface 2 and three levels of metallization 5 , 10 , and 15 . the first level 5 includes an inter - level dielectric layer 3 formed on the surface 2 , a barrier layer 4 formed on the dielectric layer 3 , a seed layer 6 formed on the barrier layer 4 , and copper 17 formed on the seed layer 6 . the second level 10 has an inter - level dielectric 7 formed on the first level 5 , a barrier layer 8 formed on the dielectric layer 7 , a seed layer 18 formed on the barrier layer 8 , and copper 9 formed on the seed layer 18 . the third level 15 has an inter - level dielectric layer 11 formed on the second level 10 , a barrier layer 12 formed on the dielectric layer 11 , a seed layer 19 formed on the barrier layer 12 , and copper 13 formed on the seed layer 19 . the third level also has a layer of cro 14 formed uniformly in thickness on top of the copper 13 . a via 20 is formed in the passivation layer 16 to expose a portion of the layer of cro 14 . a passivation layer 16 is formed on top of the third level 15 and covers portions of the dielectric layer 11 and may cover portions of the layer of cro 14 , seed layer 19 , barrier layer 12 , and copper 13 . the interconnect structure may also have only one metal layer where the above - described third level of metallization is directly located on the surface of the wafer . a second method of the invention is a method of manufacturing an integrated circuit including the steps of : ( 1 ) providing a wafer having bond pads comprised of a barrier layer , a seed layer formed thereon , and copper formed on the seed layer ; ( 2 ) forming a layer of cro on the copper ; ( 3 ) forming a passivation layer on the layer of cro ; and ( 4 ) etching the passivation layer to form a via that exposes a selected portion of the layer of cro . this method of the invention is used for bond pads on the top level , which in this case is copper . the bond pads are the features in the top - level metal used to connect a chip to the interconnect . chromium provides a good glue layer for under - bump metal stack on bond pads for wire bond . the bond pads may also be used for solder bumps for flip chip packages . a portion of an interconnect structure manufactured in accordance with the second method is shown in fig2 . inter - level dielectric layer 21 has been etched to form a trench in the shape of a bond pad . the bond pad 30 , within inter - layer dielectric 21 , includes a barrier layer 22 , a seed layer 28 formed on the barrier layer 22 , and a copper layer 23 formed on the seed layer 28 . a layer of cro 24 completely covers the copper layer 23 and a passivation layer 25 is formed on an exposed portion of the inter - level dielectric layer 21 . a small portion of the passivation layer 25 usually covers a portion of the bond pad 30 to ensure a complete seal around the edges of the bond pad . a via 51 is formed in the passivation layer 25 to expose a portion of the layer of cro 24 . a wire bond is formed by a metal wire 27 and a ball - bond material 26 . during the bonding process , once a bond is formed between ball - bond material 26 and the copper layer 23 and layer of cro 24 , the metal wire 27 is pulled away for making connection with a lead finger ( not shown ). another portion of an interconnect structure manufactured in accordance with the second method , as shown in fig3 is a multi - level interconnect structure . this bond pad 50 is in a trench of inter - level dielectric layer 31 , and includes a barrier layer 32 formed on a portion of the inter - level dielectric layer 31 , a seed layer 29 formed on barrier layer 32 , and a copper layer 33 formed on the seed layer 29 . a layer of cro 34 completely covers the copper layer 33 and a passivation layer 35 is formed on the layer of cro 34 and portions of the inter - level dielectric layer 31 . a barrier layer 7 is formed on the passivation layer 35 , a metal layer 36 is formed on the barrier layer 37 , and an inter - level dielectric film 38 is formed on the exposed metal layer 36 and dielectric layer 35 . a barrier layer 39 is formed on the dielectric layer 38 , a metal layer 40 is formed on the barrier layer 39 that contacts metal layer 36 , and an inter - level dielectric film 41 is formed on the exposed metal layer 40 and dielectric layer 38 . at the top of the bond pad 50 , a barrier layer 42 is formed on the dielectric layer 41 , and a metal layer 43 is formed on the barrier layer 42 that contacts metal layer 40 . there may also be a seed layer ( not shown ) between the metal layers 36 , 40 , and 43 and passivation layers 38 , and 41 , respectively . the metal wire 44 is bonded to the metal layer 43 by ball - bond material 45 . these additional metal layers above the layer of cro in the bond pad could be used to construct a bond pad also containing aluminum . as a result , the second method could be used for various wire bonding techniques , such as gold - wire bonding to aluminum used during assembly and packaging . one or more of the above steps may be repeated any number of times . while the invention has been described with specificity , additional advantages and modifications will readily occur to those skilled in the art . therefore , the invention in its broader aspects is not limited to the specific details shown and described herein . accordingly , various modifications may be made without departing from the spirit or scope of the general inventive concept as defined by the appended claims and their equivalents . for example , the number of metallization layers may vary .