the present invention is related to the assembly of semiconductor ics on leadframes , including wire bonding interconnection , and their final encapsulation , the sequential construction of these leadframes using deposited layers of various metals , and the process of fabricating these leadframes so that they offer quality - related visual inspection and reliable solder attachment to substrates . the invention reduces the cost of leadframes while the leadframe functions are maximized . the invention best applies to any leadframe and any substrate used in semiconductor technology which exhibit the following design features : usually , a chip mount pad for support of the ic chip surrounded by lead segments , each having a first end in proximity of the chip pad , and a second end remote from the chip pad . the invention thus applies to semiconductor package types such as pdips , soics , qfps , ssops , tqfps , tssops and tvsops . as defined herein , the starting material of the leadframe is called the “ base metal ”, indicating the type of metal . consequently , the term “ base metal ” is not to be construed in an electrochemical sense ( as in opposition to ‘ noble metal ’) or in a structural sense . the base metal of leadframes is typically copper or copper alloys . other choices comprise brass , aluminum , iron - nickel alloys (“ alloy 42 ”), and invar . 1 ) leadframes have to comprise segment ends remote from the chip mount pad (“ outer segments ”) for solder attachment to other parts ; 2 ) leadframes have to comprise segment ends near the chip mount pad (“ inner segments ”) for bond attachments to wire interconnections ; 3 ) leadframes have to comprise outer segments ductile for forming and bending the segments ; according to the teachings of this invention , need 1 ) is satisfied by depositing a layer of nickel , fully covering the leadframe base metal , and then selectively plating a layer of palladium where a solder joint has to be made . in the first embodiment of the invention , applicable especially to leadframes with pin - shaped outer segment ends ( for through - hole assembly of devices ), palladium is plated on both surfaces of the segment ends . in the second embodiment of the invention , applicable especially to leadframes with gull - wing or j - shaped outer segment ends ( for surface mount assembly of devices ), palladium is plated only on the surface of the segment ends facing the assembly board . this invention provides the option to retain the palladium thickness where it is needed for solder attachment purposes , but reduces it in other places . for example , for surface - mount devices with gull - wing shaped leads , the outer surfaces may retain 70 - 80 nm palladium , but exhibit only 20 - 30 nm on the inner surfaces . this is achieved by a two - step plating process . the invention satisfies need 2 ) by first plating the nickel layer , fully covering the leadframe base metal as outlined above , and then plating a thin layer of palladium onto the nickel layer , selectively covering areas of the leadframe which are intended for bonding wire attachment ( and chip attachment ). for palladium , a thin layer is sufficient for reliable bonding wire attachment ( stitch bonds , ball bonds , or wedge bonds ). the invention satisfies need 3 ) by the selection of thickness and structure of the nickel layer employed to fulfill need 1 ). thickness and deposition method of the nickel layer have to be selected such that the layer insures ductility and enables the bending and forming of the outer lead segments . the invention satisfies need 4 ) by depositing a thin film of palladium on the whole nickel surface of the leadframe concurrently with the plating process employed for fulfilling need 2 ). the surface thus provides for the formation of nickel oxide in amounts aiming to maximize adhesion of the leadframe to thermoset molding compounds and other encapsulation materials . the invention satisfies need 5 ) by the sequence of layers deposited over the copper base . the improved corrosion insensitivity in mixed flowing gas corrosion tests is due to the leadframe surface achieved by the invention , which has nickel , nickel oxide and palladium character . this surface hinders copper creep corrosion ( as compared to surfaces with pure palladium ), which is a function of the nobility of the exposed surface . according to the invention , the palladium layer required to satisfy needs 1 ) and 2 ) is deposited by a selective plating process . the selective characteristic of the palladium deposition is achieved by a temporary masking step , which leaves only those leadframe portions exposed which are intended to receive the palladium layer . an example of the extent of such masking is depicted in fig1 , which shows a single ( interdigitated ) leadframe unit from a continuous strip , for a typical semiconductor dual - in - line device . the temporarily masked parts of the leadframe unit are shaded and the exposed parts are unshaded . the unmasked parts include outer leadframe segments 111 , further portions 112 a of the inner lead segments 112 , and the chip mount pad 130 . as defined herein , each lead segment 110 has a first end 112 a near the chip mount pad 113 and a second end 111 remote from chip mount pad 113 . for the dual - in - line leadframe of fig1 , the second segment end 111 represents the external lead ( for some surface - mount leadframes , however , the segment functions may be designed as two distinct parts ). in the example of fig1 , the leadframe unit has 16 lead segments 110 , since it is designed for a plastic 16 - pin dual - in - line package ( pdip ). in summary , the exposed parts which receive the palladium plating , include the first ends 112 a of lead segments 110 , the second ends 111 of the lead segments , and the chip mount pad 130 . after the selective plating of the palladium layer , a cross section along line “ a - a ” in fig1 results in the schematic view generally designated 200 in fig2 , exaggerated in the vertical for clarity . the copper or copper alloy base sheet 201 has a preferred thickness in the range from 100 to 300 μm ; thinner sheets are possible . the ductility in this thickness range provides the 5 to 15 % elongation needed in any segment bending and forming operation . the leadframe is stamped or etched from the starting metal sheet . the stamped or etched leadframe is first immersed in an alkaline preclean solution at 20 to 90 ° c . for few seconds up to 3 minutes . oils , grease , soil , dirt and other contamination are thereby removed . after rinsing , the leadframe is next immersed in an acid activation bath at room temperature for few seconds up to 5 minutes . the bath consists of a solution of sulfuric acid , hydrochlorid acid , or other acid solution , preferably at about 30 to 60 g / l concentration . this solution removes copper oxide and leaves the metallic copper oxide surface in an activated state , ready to accept the deposition of metallic nickel . the nickel layers 202 are electroplated to a thickness in the range between about 50 and 150 nm . the next deposited layers 203 are an alloy between nickel and a noble metal selected from a group consisting of palladium , rhodium , gold silver , and platinum . the preferred choice is palladium , with 60 to 80 % palladium . the alloy layer is deposited by electroplating and between about 25 and 150 nm thick ; it should be coherent since its main purpose is corrosion protection . the important layers 204 are electroplated nickel , deposited preferably for a thickness of about 0 . 5 to 3 μm . this nickel layer has to be ductile in order to be malleable in any leadframe segment bending and forming process . further , the nickel surface has to be wettable in the soldering process , so that solder alloys or conductive adhesives can be used successfully . the overall thickness of the two nickel layers and the nickel alloy layer is in the range of about 650 to 4000 nm . the next deposited layers of the embodiment in fig2 are the layers 205 and 206 , comprising an electroplated noble metal selected from a group consisting of palladium , rhodium , gold and silver . layers 205 and 206 are made of the same materials , since they are deposited in the same process step ( see below under “ wheel system ”). the preferred embodiment is palladium . according to the invention , layer 105 is a thin film between about 1 and 5 nm thick , when palladium is chosen . at this thinness , only very little palladium material is consumed , and some nickel from underlying layer 204 can diffuse through the palladium and oxidize at the surface to nickel oxide . consequently , the surface assumes a combined nickel / nickel oxide / palladium character and the nobility of the exposed surface is reduced . this fact , in turn , diminishes the copper creep corrosion of the leadframe , which is a function of the nobility of the exposed surface . furthermore , it is pivotal for the present invention that the described palladium film provides for excellent adhesion to thermoplastic molding compounds — an attribute crucial for avoiding package delamination and related degradations such as the infamous “ popcorn effect ”. layers 206 are between about 70 and 90 nm thick . according to the invention , they are deposited onto the leadframe surfaces not masked in the masking step described above . in fig2 , palladium layer portions are deposited in the areas of the “ remote ” segments ends onto the first leadframe surface 220 to form layers 206 a , and onto the second leadframe surface 230 to form layers 206 b . both palladium layer portions provide the precondition for successful solder attachment . further , palladium layer portions are deposited in the areas of the “ near ” segment ends onto the first leadframe surface 220 to form layers 206 c . these palladium portions provide the precondition for successful bond wire attachment ( stitch bonds , ball bonds , and wedge bonds ). it should be noted that in the thickness range from 70 to 90 nm , palladium provides a visual distinction between the plated areas and the adjacent thin palladium film surfaces . this contrast between covered and not - covered areas can readily be noticed by the unaided eye and is , therefore , well suited for automated visual inspection in manufacturing process control , contributing to product quality assurance . there are several methods to selectively deposit metals from solution onto a continuous strip . for high volume production of leadframes , continuous strip or reel - to - reel plating is advantageous and common practice . based on the loose tolerance acceptable for the boundaries of the palladium plating on the first ends of the lead segments , the preferred deposition method for the present invention is the so - called “ wheel system ”. the process steps are as follows . material is moved over a large diameter wheel with apertures in it to allow solution flow to material ; apertures define the locations for plating ; index pins engage the pilot holes ( designated 37 in fig3 ) in the leadframe ; backing belt is used to hold material on wheel and mask backside of material ; anode is stationary inside wheel . advantages : fast , material never stops for selective plating ; no timing issues ; pumps , rectifiers , and drive system are on continuously ; low cost because system is mechanically uncomplicated . disadvantages : loose plating boundaries , poor spot location , and potential bleedout are not critical issues for the present invention . fig3 a and 3b illustrate schematically important portions of the “ wheel system ” apparatus used for fabricating leadframes according to the invention . fig3 a shows the continuous leadframe strip 301 arriving from the nickel pre - plating station , described above , and progressing continuously from entry zone 302 through the wheel and masking sections of the apparatus to the exit zone 304 . the wheel and masking sections consist of the plastic wheel 303 and the rubber masking belt 305 . the tension of the belt is adjustable for precision masking . the plastic wheel 303 , shown in more detail in fig3 b , provides spot apertures 303 a and index pins 303 b . the plating solution is pumped from the central region of the wheel system through the anode and sparger 307 , spraying the solution ( the cathode 310 is located in front of entry zone 302 ). the relatively thick palladium layers are plated within the wheel and masking section . one plating section , shown in fig3 a , serves the first surface of the leadframe , an analogous section , not shown in fig3 a , serves the second surface . in contrast , the thin palladium films so important for the present invention are plated in entry zone 302 and exit zone 304 . the leadframe strip passes through these zones fast and the concentration of plating solution in the ambient is low . after exiting from zone 304 , the leadframe strip 301 progresses to the rinsing and drying stations and further processings steps . a more precise , but also more costly and slower selective plating technique is the step - and - repeat process . leadframe material is stopped in selective plating head ; rubber mask system clamps on material ; plating solution is jetted at material ; current is applied ; current is shut off ; solution is shut off ; head opens ; material moves . advantages : very sharp plating spot with excellent edge definition ; very good spot location capability when used with index holes , pins and feedback vision system . disadvantages : slow ; material must stop during selective plating ; expensive equipment to buy and maintain ; timing issues ; lots of moving parts . fig1 and 2 depict the first embodiment of the invention , which is especially applicable to through - hole leadframes . the spot - plated palladium is deposited on the first ( top ) and second ( bottom ) surfaces of the external lead segment ends . in fig4 , the second embodiment of the invention is illustrated , especially applicable to surface - mount leadframes . here , the spot - plated palladium is deposited only on the bottom surface of the external lead segment ends ( about 70 - 80 nm thick ), which are involved in the solder attachment process of the semiconductor device to interconnection boards or motherboards . on the lead surfaces not involved in solder attachment , palladium may only be 20 - 30 nm thick . of course , the palladium is also plated onto the wire bonding areas of the internal lead ends . typically , these external device leads are formed , usually in either gull - wing shape or j - shape . an example for a gull - wing shaped device is shown in fig4 . in the schematic cross section of fig4 , the copper or copper alloy leadframe 401 of the invention is shown as applied in the assembly of a semiconductor package generally designated 400 . leadframe 401 has a chip mount pad 402 onto which an ic chip 403 is attached using adhesive material 404 ( typically an epoxy or polyimide which has to undergo polymerization ). leadframe 401 further has a plurality of lead segments 405 . these lead segments have a first end 405 a near the chip mount pad 402 and their second end 405 b remote from mount pad 402 . as shown in fig4 schematically , leadframe 401 comprises base 406 made of copper or copper alloy . on the surface of this copper is a sequence of layers , described in detail in fig2 . closest to the copper is a first layer 407 of nickel . this layer is actually a stack of layers , followed by spot - plated layers 408 and 409 of palladium . dalladium layer 609 is incorporated into the meniscus of the bulk solder 610 in the process of surface - mounting device 400 onto a substrate or board 420 . in fig4 , bonding wires 411 have stitches 412 welded to the palladium surface 408 of the first ends 405 a of leadframe segments 405 . the bonding wires are selected from a group consisting of gold , copper , aluminum , and alloys thereof . any of these metals provide reliable welds to the layered leadframes of the invention . as shown in fig4 , the second ends 405 b of segments 405 are suitable for bending and forming due to the ductility of the copper base and the plated nickel layer . using this malleable characteristic , segments 405 may be formed in any shape required for surface mounting or any other technique of board attach of the semiconductor devices . the bending of the segments does not diminish the corrosion protection of the second segment ends 405 b . for example , fig4 indicates a so - called “ gull wing shape ” of segments 405 . this shape is widely used for ic packages in the so - called “ small outline ” configuration , as illustrated in fig4 . the palladium spot - plated copper leadframe of the invention provides for easy and reliable solder attachment to boards or other parts of the formed leadframe segments . in fig4 , solder attach material 410 comprises materials selected from a group consisting of tin / lead mixture , tin / indium , tin / silver , tin / bismuth , tin / copper , tin / silver / copper , and conductive adhesive compounds . all of these materials show good wetting characteristics to the plated nickel surface of the copper leadframes . in fig4 , molding compound 413 encapsulates the mounted chip 403 , bonding wires 411 and the first ends 405 a of the lead segments 405 . the second , remote ends 405 b of the segments are not included in the molded package ; they remain exposed for solder attachment . typically , the encapsulation material 413 is selected from a group consisting of epoxy - based molding compounds suitable for adhesion to the leadframe surfaces . for the thin palladium film of the invention , excellent adhesion characteristics to molding compounds can be achieved , preventing package delamination , moisture ingress and corrosion . this improved adhesion of the molding compound is achieved , according to the invention , by creating a leadframe surface exhibiting some nickel and nickel oxide in conjunction with palladium . while this invention has been described in reference to illustrative embodiments , this description is not intended to be construed in a limiting sense . various modifications and combinations of the illustrative embodiments , as well as other embodiments of the invention , will be apparent to persons skilled in the art upon reference to the description . as an example , the material of the semiconductor chip may comprise silicon , silicon germanium , gallium arsenide , or any other semiconductor material used in manufacturing . as another example , the design , cover area and fabrication method of the palladium layer may be modified to suit specific leadframe or substrate needs . it is therefore intended that the appended claims encompass any such modifications or embodiments .