referring to fig1 , a p - type transistor structure 10 may include a deeper source drain region 18 and an implanted , shallower source drain region , tip or source drain extension 20 which may be formed , at least in part , by a boron implant . the implant is undertaken before the deeper regions 18 are formed , using the gate electrode 14 as a mask . the gate electrode 14 is formed over a dielectric layer 16 on a semiconductor substrate 12 in one embodiment of the present invention . as shown in fig2 , a deeper fluorine implant may be utilized to form the implanted region 24 . the region 24 extends to a depth slightly below the depth of the boron source drain extension implant 20 . next , a carbon implant may be utilized to form the implanted region 24 with both carbon and fluorine , as shown in fig3 . in some embodiments , transient enhanced diffusion in the p - type source drain extension is reduced when carbon is implanted in the same area as the fluorine at the same depth as or below the p - type source drain extension implant . in some embodiments as much as a 35 to 40 percent reduction in transient enhanced diffusion may be achieved . in some embodiments , the carbon species is implanted to the same depth as the fluorine species is normally implanted in the p - type source drain extension . as a result , the peak concentration of carbon and fluorine is immediately below the peak concentration of the boron implant in one embodiment . referring to fig4 , implantation of carbon in conjunction with the standard fluorine implant significantly reduces the diffusion of the p - type boron source drain extension implant . for example , in fig4 , the profile labeled “ b w / c & amp ; f ” shows a dopant profile of an annealed boron implant that had both carbon and fluorine implants slightly deeper than the boron implant . the presence of both the carbon and fluorine reduces the boron depth to 323 angstroms at a concentration of 1e18 ions per cm 3 . the “ b w / f only ” profile had only a boron and fluorine implant . note the deeper junction profile of the boron with fluorine protocol , demonstrating the increased ted . these secondary ion mass spectrometry ( sims ) profiles are all of the same boron p - type extension implant after the activation spike anneal on a rapid thermal annealing tool . in some embodiments , the carbon implant may be done at relatively low energy of about 6 kev or less with a dose of about 1e15 ions / cm 2 . the fluorine implant may be at low energy , for example , of about 10 kev or less with a dose of about 1e15 ions / cm 2 , in some embodiments of the present invention . the reduction of transient enhanced diffusion may also be enhanced if an arsenic halo implant occurs before the p - type source drain extension implants . referring to fig5 , the sims profile labeled “ after ” indicates the arsenic halo implant was done after the extension implants . the profile labeled “ before ” indicates the arsenic halo implant was done prior to the extension implant . decreased ted may be achieved by reversing the normal step order in some embodiments . in some embodiments , germanium and / or silicon implants may also be used with boron , fluorine , and carbon implants . while the present invention has been described with respect to a limited number of embodiments , those skilled in the art will appreciate numerous modifications and variations therefrom . it is intended that the appended claims cover all such modifications and variations as fall within the true spirit and scope of this present invention .