the preferred embodiment of the present invention is a method of fabrication of read sensors that utilizes fast - milling dielectric material that more closely matches the milling rate of sensor material . the present invention is also a disk drive including a magnetic head having a read head having milled sensor layers above the dielectric layer , and a method for producing this read head . a hard disk drive 2 is shown generally in fig1 , having one or more magnetic data storage disks 4 , with data tracks 6 which are written and read by a data read / write device 8 . the data read / write device 8 includes an actuator arm 10 , and a suspension 12 that supports one or more magnetic heads 14 included in one or more sliders 16 . fig2 shows a slider 16 in more detail being supported by suspension 12 . the magnetic head 14 is shown in dashed lines , and in more detail in fig3 and 4 . the magnetic head 14 includes a coil 18 and p 1 pole , which also acts as s 2 shield , thus making p 1 / s 2 20 . p 1 / s 2 may also be made as two discrete layers . the second pole p 2 22 is separated from p 1 / s 2 by write gap 23 . the read sensor 40 is sandwiched between the first shield s 1 30 and the second shield p 1 / s 2 20 . there is generally included an insulation layer 32 between the rest of the length of si 30 and p 1 / s 2 20 . the magnetic head 14 flies on an air cushion between the surface of the disk 4 and the air - bearing surface ( abs ) 24 of the slider 16 . the write head portion 26 and the read head portion 28 are generally shown , with the read head sensor 40 and the abs 24 . there are two configurations of read head in common use in the industry today . these are called current perpendicular to the plane ( cpp ), and current in the plane ( cip ). in the cpp configuration , shield s 1 and p 1 / s 2 are made of conducting material which act as electrodes supplying current to the read sensor which lies between them . the first embodiment of the present invention uses a cip configuration , in which the current flows from side to side through the elements . for cip read heads , the read sensor 40 is generally sandwiched between two insulation layers , usually designated g 1 34 and g 2 36 which are made of non - conductive material , to keep the circuit from shorting out . note that this structure is strictly for illustration only , and one skilled in the art will appreciate that sensor structures can vary dramatically from the one shown in fig4 , the methodology of the present invention being applicable to formation of all such heads . the novelty of the present invention is best understood in comparison to processes of the prior art , as discussed above . a common problem with the fabrication of sensors of the prior art is illustrated in fig5 - 15 . the sensor is typically formed of a stack of layers that are generally formed as a region of magnetic material bounded by strips of dielectric or insulating materials . fig5 shows a top plan view of a portion of a wafer 41 as it is being prepared for shaping into a cip sensor 40 . the sensor material region 42 is shown to be bounded by a first dielectric material region 44 and a second dielectric material region 46 . these first and second dielectric material regions 44 , 46 are chosen to be of non - conducting material . in the prior art , these are preferably chosen to be alumina so that these make up first and second alumina regions 54 , 56 . a band of masking material 48 such as photoresist is then deposited to protect the material of the sensor material region 42 , and first and second dielectric material regions 44 , 46 from being cut away during shaping processes such as ion milling . the width of the band of masking material 48 establishes the eventual width of the read head sensor 40 and thus the magnetic read width ( mrw ) 50 . the height of the sensor material region 42 establishes the stripe height 52 of the sensor 40 . the difficulty arises when the exposed portions of sensor material region 42 and first and second alumina regions 54 , 56 are subjected to ion milling , since the sensor material 42 and the first and second alumina regions 54 , 56 have different milling rates , the sensor material 42 being removed faster than the alumina 54 , 56 . a series of views of cross - sections of the sensor region 42 , as taken through line 6 - 6 in fig5 , and the first alumina region , as taken through line 7 - 7 of fig5 are shown side - by - side for comparison in fig6 - 15 . comparable stages of fabrication of a sensor layer stack 58 in the sensor region 42 are shown in fig6 , 8 , 10 , 12 and 14 and of an alumina stack 60 in the alumina region 54 in fig7 , 9 , 11 , 13 and 15 , respectively . since the relative heights of the layers at each stage of fabrication are at issue , the bottom of the sensor layer stack 58 and the bottom of the alumina layer stack 60 , are aligned in the pairs of drawings . in the first stage , fig6 shows the layer of sensor material 62 , protective layer 64 , preferably of material such as dlc , and then a layer of masking material 48 , and fig7 shows the layer of alumina 66 , protective layer 64 and masking material 48 . next reactive ion etching ( rie ) is performed to shape the protective layer material 64 in both fig8 - 9 . fig1 - 11 show the effect of a shaping operation such as ion milling , which narrows the sensor material 62 to the dimensions of the mask material 48 and establishes the magnetic read width ( mrw ) 50 . fig1 shows that due to its slower milling rate , the alumina layer remaining 68 may be 200 - 300 å thick , as compared to a typical sensor 62 thickness of 400 å . fig1 and 13 show the effects of depositing the hard bias / leads material 70 on both the sensor material region 42 , and the first alumina region 54 . the hard bias / leads are used to magnetically bias magnetic domains in certain layers of the sensor material 42 , but also to supply electric current to the sensor 40 . therefore , in order to maintain the function of the sensor , it is important that the leads are not shorted together . the hardbias / leads material 70 is deposited in a blanketing layer over both the sensor material region 42 and alumina regions 54 , 56 , ( see fig5 ). in the sensor region 42 , the height of the masking material 48 is such that the hard bias / leads material 70 on the masking material 48 is removed vertically far enough from the material 72 deposited on the sides of the sensor that a gap 74 remains , so that three separate elements are formed , namely a first side lead 76 and second side lead 78 , and a hard bias / lead material cap 80 . however in the alumina region 54 , shown in fig1 , since the residual step 68 remains , the hard bias / leads material 70 is raised vertically by this step height 82 , as shown by the two set of arrows . consequently , there is not enough vertical displacement of the side leads 76 and the cap 80 , so that there is no gap , and side material 72 commonly forms bridges 84 between them . first and second leads 76 , 78 are thus no longer electrically isolated , and are thus shorted together . the next process , shown in fig1 and 15 , is a cmp ( chemical mechanical polishing ) assisted liftoff . as shown in fig1 , this is intended to remove the cap 80 and the masking material 48 from the sensor 62 , leaving the first and second leads 76 , 78 electrically isolated from each other , except for the conductive path through the sensor 62 , as it should be . however , as shown in fig1 , in the alumina region 54 , the masking material 48 has been unintentionally encapsulated by the hard bias / lead layer 70 , which is not removed by the cmp assisted process . thus , this leaves an electrical short between the first and second side leads 76 , 78 , which must be removed if the sensor 62 is to function properly . in contrast , fig1 - 25 show the method of fabrication of the present invention . in place of alumina , a dielectric material having a milling rate more closely comparable to that of the sensor material is used . this material shall be referred to , purposes of this discussion , and in fig1 - 25 , which follow , as fast - milling dielectric 90 . ideally , the milling rate of this fast milling dielectric would exactly match that of the sensor material . however , an exact match is not necessary , as long as the milling rates are close enough that a step height from residual material is small enough that bridges do not form in the hard bias / lead material which then interfere with the cmp assisted removal of the masking material and excess hard bias / lead material . it is estimated that a step height of 50 å or less in the residual dielectric , which might be achieved through either full or partial mill , including a combination of mill angles , will provide satisfactory results . a partial list of materials which may be used as the fast - milling dielectric include ta 2 o 5 , sio 2 , si 3 n 4 , aln , variable compositions of al — si — o — n , hfo 2 , zro 2 , and hf 1 - x si x o 2 . it will be understood by those skilled in the art that this list is not to be considered limiting and that many other materials would fit the definition of fast - milling dielectrics . in a similar manner to that shown before , fig5 will be used to show the regions of sensor material , and a first region of fast - milling dielectric material 94 and second region of fast - milling dielectric material 96 . as before , a series of views of cross - sections of the sensor region 42 , as taken through line 6 - 6 in fig5 , and the first fast - milling material region 94 , as taken through line 7 - 7 of fig5 are shown , this time in fig1 - 25 . comparable stages of fabrication of a sensor layer stack 58 in the sensor region 42 are shown in fig1 , 18 , 20 , 22 and 24 and of a fast - milling dielectric stack 92 in the first fast - milling dielectric material region 94 in fig1 , 19 , 21 , 23 and 25 , respectively . once again , the bottom of the sensor layer stack 58 and the fast - milling dielectric stack 92 , are level in the pairs of drawings . in the first stage , fig1 shows the layer of sensor material 62 , protective layer 64 , preferably of material such as dlc , and then a layer of masking material 48 , and fig1 shows the fast - milling dielectric stack 92 , including the layer of fast - milling dielectric material 90 , protective layer 64 and masking material 48 . next reactive ion etching ( rie ) is performed to shape the protective layer material 64 in both the sensor layer stack 58 and the fast - milling dielectric stack 92 as seen in fig1 - 19 . fig2 - 21 show the effect of ion milling , using any of a variety of ion - beam , etch tools , and which narrows the sensor material 62 to the dimensions of the mask material 48 and establishes the magnetic read width ( mrw ) 50 . fig2 shows that the fast - milling dielectric stack 92 , due to its faster , but not exactly matching milling rate , still retains a reduced residual step 98 having a residual step height 99 which is 10 - 20 å in height , compared to typical thickness of 400 å of the sensor material 62 . as referred to above , it is estimated that a step height of 50 å or less in the residual dielectric will provide satisfactory results . this also compares favorably with a height of 100 - 200 å of the residual step 68 of the prior art ( see fig1 ). fig2 and 23 show the effects of depositing the hard bias / leads material 70 on both regions 42 , 94 ( see fig5 ). in the sensor region 42 , the height of the masking material 48 is such that the hard bias / leads material 70 on the masking material 48 is removed vertically far enough from the material 72 deposited on the sides of the sensor 62 that a gap 74 remains , so that three separate elements are formed , namely a first side lead 76 and second side lead 78 , and a hard bias / lead material cap 80 . in comparison , in the fast - milling dielectric stack 92 of the present invention , the reduced residual step 98 has a residual step height 99 , which is small enough that there is still enough distance that the material 72 deposited on the sides of the sensor does not join with the material in the first side lead 76 and second side lead 78 , and a gap 74 remains . now there are three separate elements are formed , namely a first side lead 76 and second side lead 78 , and a hard bias / lead material cap 80 , as in the sensor layer stack 58 . when cmp assisted liftoff is completed , as shown in fig2 and 25 , the cap 80 and the masking material 48 are removed from both the sensor 62 , and the fast - milling dielectric stack 92 leaving both sets of first and second leads 76 , 78 electrically isolated from each other , except for the conductive path through the sensor 62 , as it should be . as discussed above , there are two configurations of read head in common use in the industry today . these are called current perpendicular to the plane ( cpp ), and current in the plane ( cip ). the detailed description above had concerned a read head of the cip configuration . however , an alternative embodiment of the present invention concerns a read head of the cpp configuration . as a general convention , in the following discussion , when elements are similar to those used in the prior discussion , the same element numbers will be used . elements that differ in the cpp configuration from those in the cip configuration will use a numbering convention using elements in the 100s , wherever possible . thus , the cip read sensor was referred to as “ 40 ” and the cpp sensor will be referred to as “ 140 ”. in the cpp configuration , shields s 1 and s 2 are made of conducting material that act as electrodes supplying current to the read sensor that lies between them . the slider shown in fig2 is of a current perpendicular to plane ( cpp ), configuration wherein current flows vertically in the pictured figure rather than horizontally . the magnetic head 14 includes a coil 18 , p 1 pole 20 , and a second pole p 2 22 that is separated from p 1 pole 20 by write gap 23 . the p 1 pole 20 , second pole p 2 22 and write gap 23 can be considered together to be included in the write head 26 . a read sensor 140 is sandwiched between a first shield , designated as s 1 130 and a second shield s 2 134 , and these elements together make up the read head 128 . in this configuration of read head 128 where current is perpendicular to the plane ( cpp ), shields s 1 130 and s 2 134 act as top electrode 159 and bottom electrode 160 , respectively , supplying current to the read sensor 140 that lies between them . an insulation layer 32 also separates the s 1 130 and s 2 134 electrical leads in the area behind the read sensor 140 , so that the leads do not shunt current away from sensor . as before , the magnetic head 14 flies on an air cushion between the surface of the disk 4 and the air - bearing surface ( abs ) 24 of the slider 16 . note that this structure is strictly for illustration only , and one skilled in the art will appreciate that sensor structures can vary dramatically from the one shown in fig2 , the methodology of the present invention being applicable to formation of all such heads . in particular , an insulating layer ( not shown ) between s 2 134 and p 1 20 is present in the so - called “ piggy - back ” head design , whereas such an insulating layer is absent from the so - called “ merged ” head design shown in fig2 . the former “ piggy - back ” head design is that which is preferred in cpp sensors . as in the cip configuration discussed above , the fabrication process for a read head of cpp configuration can experience problems when the dielectric material surrounding the sensor mills at a slower rate than that of the sensor material . the cpp configuration , however , has different potential problems , one of which is illustrated in fig2 and 28 ( prior art ) and will be discussed below . a common type of cpp sensor , called a tmr sensor , has an insulating tunnel barrier layer that separates two ferromagnetic layers . sense current flows perpendicular to the surfaces of the ferromagnetic layers . in the tmr sensor , the sense current flowing through the tunnel barrier layer is strongly dependent upon a spin - polarization state of the two ferromagnetic layers . when the magnetizations of the two ferromagnetic layers are antiparallel to each other , the tunnel current is lowered , so that a high junction resistance is obtained . alternately , when the magnetizations of the two ferromagnetic layers are parallel to each other , the tunnel current is heightened ; and , thus , a low junction resistance is obtained . in order to simplify the following discussion , the various layers of the tmr sensor are not illustrated with the exception of the tunnel barrier layer . the important point to note is that current flows from an upper electrode to a lower electrode through the sensor material . there should not be any other conductive path linking the electrodes directly to the tunnel junction layer aside from the conductive layers in the sensor itself , because this will shunt current away from the sensor with an attendant loss of its sensitivity , in effect partially , or completely , “ shorting out ” the sensor . reference is now made to fig2 and 28 ( prior art ), which show exactly this condition happening . fig2 is an enlarged detail view of the detail box a enclosed by dashed lines in a portion of fig2 . these figures show isometric views of a cpp read head sensor 140 in an intermediate stage of fabrication . the sensor material 142 has been formed on the lower electrode 160 , and surrounding layers of conventional dielectric material 45 , 47 have been formed around the sensor material 142 in a similar manner to that discussed above . the sensor material 142 and dielectric material 45 , 47 to the left and the right of the sensor , respectively , have been milled to form the magnetic read width ( mrw ) dimension 50 and the stripe height 52 of the sensor 140 . note that the stripe height 52 that exists at wafer - level processing differs from the final stripe height of the sensor after the wafer has been cut into rows in the so - called slider - fabrication process , where the stripe height is further reduced by lapping to the required dimension of a functioning sensor in the read head , as is known in the art . as shown more clearly in fig2 , the conventional dielectric material 44 has milled at a slower rate than the sensor material 142 , leaving a step height 82 , as in the discussion above . the tunnel barrier layer 150 is shown as part of the sensor material 142 . in the course of milling operations , residual material 100 is generated , which can be partly composed of small particles of the sensor material 142 , and hence may be electrically conductive . this residual material 100 is especially difficult to remove from the corner areas of the sensor 140 . in the prior art , using conventional dielectric 45 , generally alumina , the milling rate of the dielectric does not closely match the milling rate of the sensor material 142 , and thus a residual step height 82 remains between the alumina 45 and the sensor material 142 . the step height 82 of the conventional dielectric 45 allows the residual material 100 to accumulate in the corners until it bridges across the tunnel barrier material 150 and creates an unwanted electrical path to the lower electrode 160 by creating an electrical shunt that “ shorts out ” the sensor . this is known as “ corner shunting ”. this is , of course , undesirable , and the following fig2 and 30 show how this problem is solved by the use of the method of the present invention . fig3 is an enlarged detail view of the detail box b enclosed by dashed lines in a portion of fig2 . these figures again show isometric views of a cpp read head sensor 140 in the same intermediate stage of fabrication . once again , the sensor material 142 and dielectric material , this time using fast - milling dielectric material 90 , on the left of the sensor 95 , and on the right of the sensor 97 , have been milled to form the magnetic read width ( mrw ) dimension 50 and the stripe height 52 of the sensor 140 . the fast - milling dielectric material 90 , 95 , 97 as used in the present invention , results in a much reduced residual step height 99 . accumulated milling residue 100 which builds up in the corner cannot bridge across the tunnel barrier layer 150 , and thus corner shunting of this type is eliminated . as will be discussed below , it is possible that this residual step height 99 can be a negative value if the dielectric material is completely removed , and the underlying electrode material 160 is milled into slightly . in a similar manner to that discussed above , fig3 shows a top plan view of a portion of a wafer 141 as it is being prepared for shaping into a cpp sensor 140 . the sensor material region 142 is shown to be bounded by first dielectric material region at the back side of the sensor 44 and second dielectric material region at the front of the sensor 46 as before . in the prior art , these are preferably chosen to be alumina so that these make up first and second alumina regions 54 , 56 . a band of masking material 48 such as photoresist is then deposited to protect the material of the sensor material region 142 , and first and second dielectric material regions 44 , 46 from being cut away during shaping processes such as ion milling . the width of the band of masking material 48 establishes the eventual width of the read head sensor 140 and thus the magnetic read width ( mrw ) 50 . the height of the sensor material region 142 establishes the stripe height 52 of the sensor 140 during the wafer process . in a similar manner to that discussed above , the following series of figures will depict the cross - sectional views of the material stacks of the cpp sensor as taken through section lines 8 - 8 and 9 - 9 . the series of views of cross - sections of the sensor region 142 , as taken through line 8 - 8 in fig3 , and the first alumina region 54 , as taken through line 9 - 9 of fig3 are shown side - by - side for comparison in fig3 - 41 . fig3 - 41 show the cross - sections as seen in the prior art , using alumina as the dielectric material , and fig4 - 51 show the cross - sectional views of a first fast - milling dielectric material 94 region , as in the method of the present invention . comparable stages of fabrication of a sensor layer stack 158 in the sensor material region 142 are shown in fig3 , 34 , 36 , 38 , and 40 and of an alumina stack 60 in the alumina region 54 in fig3 , 35 , 37 , 39 and 41 , respectively . since the relative heights of the layers at each stage of fabrication is of interest here , the bottom of the sensor layer stack 158 and the bottom of the alumina layer stack 60 , are aligned in the pairs of drawings . in the first stage , fig3 shows the electrode layer 160 upon which are formed a layer of sensor material 162 , including the tunnel barrier layer 150 , a protective layer 64 , and a layer of masking material 48 . fig3 shows the electrode layer 160 followed by a layer of alumina 66 , a protective layer 64 and masking material 48 . reactive ion etching ( rie ) is next performed to shape the protective layer material 64 in both fig3 and 35 . fig3 and 37 show the effect of a shaping operation such as ion milling , which narrows the sensor material 162 to the dimensions of the mask material 48 and establishes the magnetic read width ( mrw ) 50 . fig3 shows that due to its slower milling rate , the alumina layer remaining as a residual step 68 may be 150 - 300 å thick , as compared to a typical sensor 162 material thickness of 300 ˜ 400 å . a layer of insulating material 176 is formed on both the sensor stack 158 and the alumina layer stack 60 . this insulating material prevents electrical shorts and is another important difference from the structure of the cip read head discussed earlier . fig3 and 39 show the effects of depositing hard bias material 170 on both the sensor material region 142 , and the first alumina region 54 . the hard bias material 170 is used to magnetically bias magnetic domains in certain layers of the sensor material 142 . it is also generally electrically conductive , and this is the reason that the insulating layer 176 is important in a cpp configuration , to maintain electrical isolation . the hard bias material 170 is deposited in a blanketing layer over both the sensor material region 142 and alumina region 54 . in the sensor region 142 , the height of the masking material 48 is such that the hard bias material 170 on the masking material 48 is removed vertically far enough from the material 172 deposited on the sides of the masking material 48 that a gap 74 remains or a thin separation layer separates the hard bias material cap 180 from the other hard bias material 170 . however , in the alumina region 54 , shown in fig3 , since the residual step 68 remains , the hard bias material 170 is raised vertically by this step height 82 , as shown by the two set of arrows . consequently , there is not enough vertical displacement and no gap remains . the side material 172 commonly forms bridges 84 between the cap 180 and the remaining hard bias material 170 . the next process , shown in fig4 and 41 , is a cmp ( chemical mechanical polishing ) assisted liftoff . as shown in fig4 , this is intended to remove the cap 180 and the masking material 48 from the sensor 162 . however , as discussed above with reference to fig3 , in the alumina region 54 , the masking material 48 has been unintentionally encapsulated by the hard bias material 170 , which may not be removed by the cmp assisted process . thus , this leaves material behind the sensor , which must be removed if the sensor 162 is to function properly . this is not shown here , but is analogous to the condition discussed above with reference to the cip configuration and shown in fig1 above . alternatively , the cmp process may indeed remove the cap 180 , and plane the hard bias material 170 down to the level of the protective layer 64 , as seen in fig4 and 41 . however , due to the residual step 66 of the alumina layer 68 , the hard bias material 170 is raised higher then it should be , so when the cmp process laps it down to the level of the protective layer 64 , the hard bias layer 170 is reduced by the same thickness of the step height 82 of excess alumina 66 below it . the effectiveness of the hard bias material 170 to bias the free layer ( not shown ) of the sensor is dependent upon the thickness of material included . since the thickness is thus reduced , the effectiveness of the hard bias material 170 is likewise reduced and performance of the sensor 140 may be compromised . in contrast , fig4 - 51 show the method of fabrication of a cpp sensor of the present invention . in place of alumina , a dielectric material having a milling rate more closely comparable to that of the sensor material is used . as previously discussed , this material shall be referred to as fast - milling dielectric 90 . a partial list of materials , which may be used , include ta 2 o 5 , sio 2 , si 3 n 4 , aln , variable compositions of al — si — o — n , hfo 2 , zro 2 , and hf 1 - x si x o 2 . it will be understood by those skilled in the art that this list is not to be considered limiting and that many other materials would fit the definition of fast - milling dielectrics . in a similar manner to that shown before , fig3 shows the regions of sensor material , and a first region of fast - milling dielectric material 94 and second region of fast - milling dielectric material 96 . as before , a series of views of cross - sections of the sensor region 42 , as taken through line 8 - 8 of fig3 and the first fast - milling material region 94 , as taken through line 9 - 9 of fig3 are shown , this time in fig4 - 51 . comparable stages of fabrication of a sensor layer stack 158 in the sensor region 142 are shown in fig4 , 44 , 46 , 48 , and 50 and of a fast - milling dielectric stack 92 in the first fast - milling dielectric material region 94 in fig4 , 45 , 47 , 49 , and 51 , respectively . once again , the bottom of the sensor layer stack 158 and the fast - milling dielectric stack 92 , are coincident lying within the same plane in the pairs of drawings . in the first stage , fig4 shows the electrode layer 160 upon which are formed a layer of sensor material 162 , including the tunnel barrier layer 150 , a protective layer 64 , and a layer of masking material 48 . fig4 shows the fast - milling dielectric stack 92 of the first fast - milling region 94 , including the electrode layer 160 followed by a layer of fast - milling dielectric material 90 a protective layer 64 and masking material 48 . next reactive ion etching ( rie ) is performed to shape the protective layer material 64 in both the sensor layer stack 158 and the fast - milling dielectric stack 92 as seen in fig4 - 45 . fig4 - 47 show the effect of ion milling , using any of a variety of ion - beam , etch tools , and which narrows the sensor material 162 to the dimensions of the mask material 48 and establishes the magnetic read width ( mrw ) 50 . the fast - milling dielectric stack 92 , due to its faster , but not exactly matching milling rate , may still retain a reduced residual step 98 having a residual step height 99 in a similar manner to that shown in fig2 of the cip configuration . this is much reduced compared to the residual step 68 of the prior art having residual step height 82 ( see fig3 ). the layer of insulating material 176 is formed on both the sensor layer stack 158 and the fast - milling dielectric stack 92 , as described above . alternatively , the fast - milling dielectric material 90 may mill even slightly faster then the material of the sensor stack 158 . this may allow all of the fast - milling dielectric 90 in this region to be removed , as well as thin layer of the electrode material 160 . this results in a negative step height 182 , which is shown in fig4 , 49 and 51 . it is believed that this negative step height , or reduced electrode thickness will not negatively affect performance of the read head , if the negative step height is within the range of 0 to 300 å . fig4 and 49 show the effects of depositing the hard bias material 170 on both regions 142 , 94 . in the sensor region 142 , the height of the masking material 48 is such that the hard bias material 170 on the masking material 48 is removed vertically far enough that a gap 74 or a thin area remains , allowing for easy removal of the bias material cap 180 . in comparison , in the fast - milling dielectric stack 92 of the present invention , the reduced residual step 98 has a residual step height 99 , 182 , which is small enough , ( or even negative , as shown in the figure ) that an even larger gap 74 or a thin area again remains . the hard bias material cap 180 is thus easily removed . also , the thickness of the hard bias material 170 is not compromised as in the case of the prior art discussed above , and thus the biasing effect of the hard bias layer 170 is also not reduced . when cmp assisted liftoff is completed , as shown in fig5 and 51 , the cap 180 and the masking material 48 are removed from both the sensor 162 , and the fast - milling dielectric stack 92 . the result is a read sensor 140 that does not encounter the problems discussed above pertaining to corner shunting . while the present invention has been shown and described with regard to certain preferred embodiments , it is to be understood that modifications in form and detail will no doubt be developed by those skilled in the art upon reviewing this disclosure . it is , therefore , intended that the following claims cover all such alterations and modifications that nevertheless include the true spirit and scope of the inventive features of the present invention .