for the purpose of promoting an understanding of the principles of the invention , reference will now be made to the embodiment illustrated in the drawings and specific language will be used to describe the same . it will nevertheless be understood that no limitation of the scope of the invention is thereby intended , such alterations and further modifications in the illustrated device , and such further applications of the principles of the invention as illustrated therein being contemplated as would normally occur to one skilled in the art to which the invention relates . it will be understood by those skilled in the art that the foregoing general description and the following detailed description are exemplary and explanatory of the invention and are not intended to be restrictive thereof . as shown in fig1 , the nonvolatile programmable resistor memory cell 10 according to the first embodiment of this invention consists of a sandwich - type structure comprising a high - mobility oxygen ion conductor region 13 and two electrodes 11 , 12 . an electrical signal applied to the electrodes 11 , 12 causes migration of oxygen ions within the high - mobility oxygen ion conductor layer 13 towards the electrode ( and vice versa ). an applied voltage thus alters the oxygen ion concentration in the vicinity of the electrodes and hence the energy barriers for charge carrier injection and therefore the resistance of the memory cell . the interface region near the electrodes can be reversibly switched between two or more resistance states associated with migration of oxygen ions . fig2 of the accompanying drawings depicts the second embodiment of this invention . the memory cell 10 according to this embodiment is a sandwich - type structure comprising a high - mobility oxygen ion conductor region and a transition - metal oxide region 14 that exhibits a filling - controlled metal - insulator transition , and two electrodes 11 , 12 . an electrical signal applied to the electrodes causes migration of oxygen ions from the high - mobility oxygen ion conductor region 13 into the transition - metal oxide region 14 ( and vice versa ). this changes the formal oxidation state of the transition metal ion in the transition - metal oxide layer and concomitantly the filling of the transition metal band . the initial doping level of the transition - metal region can be chosen such that a significant change of the resistance of the transition - oxide metal oxide layer is obtained for a small change in oxygen stoichiometry . therefore the resistance of the memory cell can be reversibly switched between two or more resistance states . preferably , at least one of the electrodes is transparent for oxygen . good oxide - ion conduction requires partial occupancy of energetically equivalent oxide - ion lattice sites . the oxygen ions can then move by diffusion . the high - mobility oxygen ion conductor region may comprise ce 0 . 9 gd 0 . 1 o 1 . 95 or bi 4 v 1 . 8 cu 0 . 2 o 10 . 7 . other high - mobility oxygen ion conductors such as fluorite - type with extrinsic oxide - ion vacancies ( such as stabilized zirconia ( zro 2 ) 1 − x (( y , sc ) 2 o 3 ) x , doped ceria ( ce , gd ) o 2 - x , δ - bi 2 o 3 ), perovskites with intrinsic or extrinsic vacancies ( such as ( la , sr )( ga , mg ) o 3 − x , baino 2 . 5 , ( li , la ) tio 3 − x ), aurivillius - type oxides ( such as bi 4 ( v , ti , cu ) 2 o 11 − x ), pyrochlores ( such as gd 2 ( zr , ti ) 2 o 7 ), and oxides like la 2 mo 2 o 9 can be used advantageously for the present invention too . materials exhibiting a so - called filling - controlled metal - insulator transition are preferred for the transition - metal oxide region . examples are the corundum vanadium and / or chromium oxide ( v , cr ) 2 o 3 − x and perovskites such as ( la , sr ) mo 3 − x , m being a 3d transition metal element . the parent perovskite compounds lamo 3 and srmo 3 are mott or charge - transfer insulators , and upon changing the band filling , for example associated with oxygen vacancies , a metallic state is obtained . most preferable are strontium titanium oxide srtio 3 − x , lanthanum titanium oxide latio 3 + x , yttrium and / or calcium titanium oxide ( y , ca ) tio 3 − x , and lanthanum and / or strontium manganese oxide ( la , sr ) mno 3 − x because of their strong dependence of the room - temperature resistance on the oxygen stoichiometry . other examples of materials that are advantageously usable include binary transition - metal oxides such as nickel oxide nio x , strontium and / or barium titanium oxide ( sr , ba ) tio 3 , praseodymium and / or calcium manganese oxide ( pr , ca ) mno 3 , strontium zirconium oxide srzro 3 , each material doped preferentially with chromium , manganese , or vanadium . further , the materials described in the above - mentioned documents , incorporated herein by reference , are advantageously usable in a memory device of the present invention . fig3 illustrates the sequence of steps for fabricating a nonvolatile programmable resistor memory cell according to the present invention . it should however be understood that some of the steps can be performed in parallel or performed without the requirement of maintaining a strict order of sequence . the method begins at step 300 . in steps 301 and 303 the first and second electrode are formed respectively , the second electrode facing the first electrode . a resistance structure comprising a high - mobility oxygen ion conductor region is provided between the first and second electrode in step 302 . to modify the resistance of the memory cell , electric field is applied to the electrodes which causes the migration of the oxygen ions within the said region . it is also to be understood that the present invention is not limited to the embodiments described above , but encompasses any and all embodiments within the scope of the following claims .