referring to fig2 a cross - sectional diagram of a package 100 is shown in accordance with a preferred embodiment of the present invention . the package 100 may be implemented as an enhanced laminate flipchip package using a heatspreader with a high coefficient of thermal expansion ( cte ). the package 100 generally comprises a die 102 , a heatspreader 104 , and a substrate 106 . the die 102 and the heatspreader 104 may be joined using a die attachment material 108 at any stage during an assembly process . in one example , the modulus of the die attachment material 108 may be greater than 100 mpa . the coefficient of thermal expansion ( cte ) of the die 102 and the heatspreader 104 combination may be adjusted to match the cte of the substrate 106 . the die 102 may be implemented as a silicon die . however , other materials ( e . g ., germanium , etc .) may be implemented accordingly to meet the design requirements of a particular application . the heatspreader 104 may be implemented using a metallic material ( e . g ., aluminum ). in one example , the heatspreader 104 may be implemented as a heat sink . however , other configurations may be implemented accordingly to meet the design criteria of a particular application . the heatspreader 104 may be coated ( e . g ., oxide coated , painted , etc .) or uncoated . the die 102 may have a cte that is lower than a cte of the substrate 106 . the heatspreader 104 generally has a cte that is greater than a cte of the substrate 106 . the die attachment material 108 may be implemented as a high modulus , high glass transition temperature ( tg ) adherent ( e . g ., an epoxy , a metal alloy , etc .). the die attachment material 108 may be configured to rigidly join the die 102 to the heatspreader 104 . the side of the die 102 that is attached to the heatspreader 104 may be in compression . attaching the die 102 to the heatspreader 104 using the die attachment 108 may reduce the tendency of the die 102 to crack . the die 102 may be mounted on the laminate substrate 106 via a plurality of flipchip solder bumps 110 . the solder bumps 110 may be configured to provide an area array interconnect such that the die 102 is mechanically and electrically connected to the substrate 106 . optionally , an underfill 112 may be implemented to fill a gap between the die 102 and the substrate 106 . the present invention may allow the use of any appropriate underfill material . the substrate 106 generally comprises a plurality of solder balls 114 on a side opposite the side where the die 102 is attached . the cte of the die 102 is generally lower than the cte of the substrate 106 . the heatspreader 104 generally has a cte that is greater than the cte of the substrate 106 . one or more characteristics of the heatspreader 104 may be adjusted to provide an effective cte of the combination of the die 102 and the heatspreader 104 substantially the same as ( matches ) the cte of the substrate 106 . in one example , a thickness of the heatspreader 104 may be adjusted to match the cte of the die 102 / heatspreader 104 combination with the cte of the substrate 106 . when the die ( or wafer ) 102 thickness is decreased , the thickness of the heatspreader 104 may be reduced . similarly , in the example where the heatspreader 104 is implemented as a heat sink , thinning the die 102 may reduce the depth and / or number and / or change the shape of ribs on the heatspreader 104 required such that the cte of the die 102 / heatspreader 104 combination matches the cte of the substrate 106 . in another example , an area of the heatspreader 104 may be adjusted such that the cte of the die 102 / heatspreader 104 combination matches the cte of the substrate 106 . in one example , the area of the heatspreader 104 may be sized smaller than or equal to the area of the die 102 . referring to fig3 a cross - sectional diagram of a package 100 ′ illustrating an alternative implementation of the package 100 is shown . the package 100 ′ may be implemented similarly to the package 100 . the area of heatspreader 104 ′ may be sized greater than the area of the die 102 . in one example , the heatspreader 104 ′ may be implemented as a heat sink . however , other configurations may be implemented accordingly to meet the design criteria of a particular application . referring to fig4 a cross - sectional diagram of a package 100 ″ illustrating another alternative implementation of the package 100 is shown . the package 100 ″ may be implemented similarly to the package 100 . the package 100 ″ may comprise a stiffener 116 . the stiffener 116 may be joined to the substrate 106 using a stiffener attachment 118 . the stiffener 116 may have a cte similar to the cte of the substrate 106 . the stiffener attachment 118 may be a high modulus , high tg adherent similar to the die attachment 108 . in one example , the modulus of the stifffener attachment 118 may be greater than 1 gpa . referring to fig5 a cross - sectional diagram of a package 100 ′″ illustrating yet another alternative implementation of the package 100 is shown . the package 100 ′″ may be implemented similarly to the package 100 ″ except that the package 100 ′″ may comprise the heatspreader 104 ′ ( e . g ., the area of heatspreader 104 ′ may be sized greater than the area of the die 102 ). in general , the heatspreader 104 ′ may be unattached to the stiffener 116 . in one example , the heatspreader 104 ′ may be implemented as a heat sink . however , other configurations may be implemented accordingly to meet the design criteria of a particular application . referring to fig6 a detailed sectional diagram of a package 100 ″″ illustrating still another alternative implementation of the package 100 is shown . the package 100 ″″ may be implemented similarly to the package 100 ′″ except that the heatspreader 104 ′ may be joined to the stiffener 116 using a heatspreader attachment 120 . the heatspreader attachment 120 may be implemented as a low modulus material ( e . g ., thermal grease , gel , etc .). the modulus of the heatspreader attachment 120 is generally less than 100 mpa . the flipchip package 100 may have improved component and board level reliability when compared with conventional flipchip packages . the present invention may improve component and board level reliability of flipchip packages with laminate substrates . the present invention may match the effective cte of the combination of a die and a heatspreader to the cte of a laminate substrate . the present invention may reduce or eliminate warpage of the die 102 . the present invention may reduce ( a ) cracking of the die 102 due to warpage and ( b ) cracking the substrate 106 due to ( i ) warpage of the die 102 and / or ( ii ) warpage of the substrate 106 . the board level reliability of the solder joints between the package 100 and the printed circuit board ( pcb ) may be significantly increased . the present invention may reduce or eliminate the underfill 112 . when the underfill 112 is present , the present invention may significantly reduce stress at the interface between the die 102 and the underfill 112 . the present invention may allow the stiffener 116 to have a reduced area and / or thickness or be eliminated . while the invention has been particularly shown and described with reference to the preferred embodiments thereof , it will be understood by those skilled in the art that various changes in form and details may be made without departing from the spirit and scope of the invention .