with reference to a schematic cross section through the layer structure , fig1 shows a known resonator of smr type ( reflector type , solidly mounted resonator ) and also one possible wiring of the resonator in operation . silicon is used , for example , as the substrate s here . the acoustic reflector here comprises four layers above an oxide layer os , wherein here sio 2 layers are used as low - impedance layers zl and tungsten layers are used as high - impedance layers zh . the first electrode e 1 is made from aluminum , the piezoelectric layer ps is made , for example , from aluminum nitride , and the second electrode e 2 is made from molybdenum . fig1 b shows one possible wiring , in which the resonator can be operated between a first and a second port p 1 , p 2 . each second connection of each port p is connected to ground . fig2 shows the fundamental mode of this resonator with reference to its admittance curve a , which was determined in a wiring as in fig1 b , wherein the resonator oscillates versus air . the profile of the admittance a versus the frequency allows the resonance frequency at the zero of the curve to be identified at ca . 2000 mhz . at ca . 2045 mhz there is a pole , which corresponds to the anti - resonance frequency and thus to the location of maximum admittance . the two shown curves are defined for resonators with different surface areas , wherein one time the resonance and one time the anti - resonance are expressed more sharply . fig2 b shows the same representation in larger scale . in addition to the strong resonance at 2 ghz , in the admittance curve a , minimally expressed , but still visible higher modes can be identified , which are referred to in the figure with arrows and which here are at ca . 3 . 2 ghz , 4 . 8 ghz , and 6 . 3 ghz . the resonator mode at 3 ghz can be identified as a reflection mode , which occurs due to a resonance effect of the reflector . it is shown that the higher modes are significantly suppressed and are at a ratio relative to the frequency of the fundamental mode of 1 . 00 , 1 . 60 , 2 . 40 , or 3 . 15 , etc . therefore , such a resonator is suitable and optimized exclusively for operation in the fundamental mode . the acoustic reflector of the resonator is set so that it exhibits maximum reflection at the resonance frequency of the fundamental mode . fig3 shows the layer structure of a first embodiment with reference to a schematic cross section . the resonator features the same number of layers , which are varied merely relative to the layer thickness . in addition , for better modification , the second electrode e 2 is constructed from aluminum and reduced in layer thickness . if one selected , for this system , the acoustic reflector from the first embodiment according to fig1 , then the resonator would oscillate in its fundamental mode at a frequency of ca . 2 ghz . in the resonator of fig3 , all of the reflector layers are divided relative to their thickness by the factor 4 . thus , a higher oscillation mode at ca . 6 . 1 ghz is achieved , while simultaneously the fundamental mode at ca . 2 ghz is suppressed to a good degree . the embodiment is arranged on a substrate s made from silicon and a first oxide layer os . above these layers , alternating high - impedance layers zh and low - impedance layers zl are arranged again . fig4 shows the profile of impedance a ( fig4 a ) and phase p ( fig4 b ) of the resonator of fig3 . it can be seen that the resonator exhibits a pronounced oscillation only at ca . 6 . 1 ghz , whose phase response according to fig4 b shows a good phase variation of not quite 180 °. because only a small phase variation is observed at the resonance frequency of the fundamental mode , the figures makes it clear that the resonator oscillates primarily in its higher mode , here the third harmonic mode . thus , it is shown that targeted higher modes are already excited with a non - optimized embodiment and the fundamental mode can be almost completely suppressed . the variation of the reflector is useful for the functioning of the resonator . fig5 shows the reflection response r n of the reflector shown in the embodiment according to fig3 , in which all of the reflector layers are reduced by the factor 4 . 1 relative to an acoustic reflector tuned to the fundamental mode . the relative reflectivity of the reflector versus frequency is plotted . in contrast , for comparison , the reflection response r a of the corresponding known acoustic reflector tuned to the fundamental mode is shown , which otherwise has the same structure . an optimal reflector should have a zero at which the fundamental mode is damped to a maximum degree , for the frequency of the fundamental mode at approximately 2 ghz , so that the reflector is transparent at this point for the wave . the reflector shown in fig5 by a reflection response r n and not yet optimized due to still present reflector distortion exhibits a definitely damped but not completely eliminated reflectivity for the frequency of the fundamental mode at approximately 2 ghz . for higher frequencies , however , this non - optimized reflector already functions as a nearly ideal reflective element . therefore , in principle , all higher modes are ready for propagation . for the range around 6 ghz , the reflector has a maximum value of reflection of 1 . 0 , so that here a maximum excitation of the third harmonic mode residing there is guaranteed . in connection with fig4 , it is also clear that the reflector spectrum would allow the excitation of higher modes , but this does not occur , so that for suppressing even higher modes , no additional measures must be taken for a resonator structure according to the invention . in general , it is to be determined that the exact position of the reflection centers , that is , the locations at which a reflector optimally reflects , is also still a function of the thickness of the electrodes e . this leads to the fact that starting from a known reflector reflecting at a given fundamental mode , a reflector optimally reflecting at a higher mode can usually not be obtained exclusively through a reduction of the reflector layers in the ratio of the respective frequencies to each other . instead , other factors are to be considered that cannot be easily represented . however , in principle it is possible at any time to arrange the stop band of the reflector above the fundamental mode . for the most part , a reflection response is obtained that fulfills the desired purpose , namely the suppression of the fundamental mode and the maximum reflection of the higher mode . fig6 shows , with reference to a schematic cross section , another embodiment . shown is a layer structure for a resonator that exhibits an approximately equally strong resonance at two different frequencies , that is , in two different modes . it again starts with a resonator that is optimized to a fundamental mode lying at ca . 2 ghz , similar to the resonator illustrated in fig1 . by varying , in particular , the layer thickness of the first electrode e 1 , the structure shown here is obtained . in comparison with fig1 , here the top electrode e 2 is constructed from aluminum and the layer thickness of the piezoelectric layer is modified somewhat . the layer thickness values are , in detail : os = 533 nm , zh 1 = 638 nm , zl 1 = 641 nm , zh 2 = 639 nm , zl 2 = 655 nm , e 1 = 1000 nm , ps = 1885 nm , and e 2 = 150 nm . fig7 shows the resonance response of this resonator with reference to the impedance curve a ( fig7 a ) and the phase profile p ( fig7 b ). it is easy to see that , in addition to a first mode at ca . 1700 mhz , the second harmonic also experiences significant excitation at approximately 2750 mhz . thus , a resonator is provided that oscillates in two modes with approximately equal strength . fig8 shows one possibility for wiring a resonator r with external switching elements . shown is the series wiring of the resonator with two series inductors l 1 , l 2 . here , the resonator is connected to ground as a two - port resonator . with the aid of these external switching elements l 1 , l 2 , the pole / zero spacing can be increased . fig9 a and 9b show this with reference to the corresponding admittance curves or with reference to the phase response of a correspondingly wired resonator , wherein the layer structure described in fig3 is used as a resonator . fig9 a shows the transmission curve n of the embodiment according to fig8 , while it is compared to the already described behavior of a resonator according to fig3 without external wiring elements with the curve labeled a . while the pole remains nearly unchanged , the zero changes towards deeper frequencies . this creates an increase in the pole / zero spacing . this greater spacing , which corresponds to a higher bandwidth but simultaneously also to a reduction in quality , allows a better stimulation of the oscillations of the resonator . this is shown with reference to fig9 b , in which the phase response of the resonator is shown . the change in phase of the externally wired resonator is considerably more pronounced than that of a non - externally wired resonator , such as , e . g ., that of a resonator according to the embodiment of fig3 . fig1 a / 10 b show the transmission response a and the phase response p of another resonator , in which the piezoelectric layer is produced from pzt . this material has significantly greater pole / zero spacing than the aluminum nitride used in the previous embodiments , so that here the higher modes also have a higher pole / zero spacing . this example also shows that , with the aid of pzt , a well pronounced phase change of the higher mode can be achieved , which can be seen especially in the phase response according to fig1 b . fig1 shows another embodiment for the layer structure of a resonator , which is constructed as a crf filter ( coupled resonator filter ) and which comprises two resonators r 1 , r 2 formed one above the other . while the bottom resonator r 1 is constructed as before above an acoustic reflector as from reflector layers zh , zl with alternating relatively high and relatively low acoustic impedance , above these layers , as the coupled layer system ks , an alternating layer sequence made from si 0 2 layers ks 1 , ks 3 , ks 5 , and aluminum nitride layers ks 2 , ks 4 is provided . finally or next , on top of this system , the second resonator with the third electrode e 3 , the second piezoelectric layer ps 2 , and the fourth electrode e 4 are arranged . while the acoustic reflector can be constructed according to the embodiment shown in fig3 and 6 , in this embodiment the remaining layers have the following layer thickness values : e 1 ( al , 174 nm ); ps 1 ( aln , 2541 nm ); e 2 ( al , 174 nm ), ks 1 ( sio 2 , 800 nm ), ks 2 ( aln , 1531 nm ), ks 3 ( sio2 , 408 nm ); ks 4 ( aln , 1531 nm ), ks 5 ( sio 2 , 800 nm ), e 3 ( al , 174 nm ), ps 2 ( aln , 2541 nm ), e 4 ( al , 174 nm ). while previously individual resonators were considered , here a complete filter is implemented by the two resonators arranged one above the other with the coupled layer system ks arranged therebetween . port 1 is formed by the two connections i and 2 . in contrast , port 2 is formed by the two connections 3 and 4 , which each contact the electrodes . this filter has a passband , which corresponds to the resonance frequency of the higher mode . for the actual fundamental mode of the filter , which is suppressed by the corresponding modification of the acoustic reflector , high damping is achieved . another variation of this resonator filter provides that the coupled layer system ks is replaced by an individual coupling layer , for example , by a bcb layer of 175 nm . for otherwise constant layer thicknesses and layer materials , with this configuration a filter response is also achieved that has a passband in the region of the higher mode . only a few embodiments are described herein . the scope of this disclosure covers varying and optimizing layer thicknesses , in order to achieve an optimum suppression of the fundamental mode . corresponding layer thickness modifications may also be used when materials of the reflector , electrode , and piezoelectric layer are changed . because each change disrupts the entire system for a system that has been optimized once , after modifying a single layer , usually other modifications are necessary to a smaller extent for