there is provided a novel cmp slurry composition for a cmp process of oxide film with high - planarity , the slurry comprising a carbon compound having tens of thousands of carboxyl groups and having hundreds of thousands to millions of molecular weight , an abrasive , and water . fig2 a shows the carbon compound included in the slurry composition of the present invention . the carbon compound has molecular weight ranging from 1 × 10 5 to 1 × 10 7 and has 1 , 000 to 100 , 000 carboxyl groups . the anionic carboxyl group serve as a complex agent - forming complex with a metal element in a solution . the compound exists in an extended chain - form by repulsive forces between anionic carboxyl groups in a basic solution , and forms a complex in the presence of a cationic metal compound . in the composition of the present invention , the carbon compound preferably is one or more anionic polymers selected from the group consisting of poly ( acrylic acid ), poly ( acrylic acid - co - maleic acid ), poly ( methylvinylether - alt - maleic acid ), polyacrylamide , poly ( acrylamide - co - acrylic acid ), and polyacrylonitrile , or derivatives thereof . preferably , the carbon compound is the anionic polymer of poly ( acrylic acid ) and its derivatives . however , the invention is not limited to the above - listed anionic polymers , but all anionic polymers which can form a complex with metal compound may be used as the carbon compound included in the slurry composition of the present invention . the carbon compound is commercially available , and “ carbopol ” a product of noveon co ., ltd ., is a preferable example for the poly ( acrylic acid ) or its derivatives . among them , “ carbopol 940 ” having molecular weight of four million ( 4 × 10 6 ) or “ carbopol 941 ” having molecular weight of one and a quarter ( 1 . 25 ) million ( 1 . 25 × 10 6 ) can be more preferably used . in addition , all kinds of anionic polymers including poly ( acrylic acid ) compounds of aldrich co ., ltd ., having similar molecular weights as above may be used as the carbon compound included in the slurry composition of the present invention . preferably , the polymeric carbon compound is present in an amount ranging from 0 . 01 weight percent ( wt . %) to 5 . 0 wt . %, more preferably from 0 . 05 wt . % to 1 . 5 wt . %, based on total weight of the slurry composition . there are no specific limitations on the abrasive included in the slurry composition of the present invention , and any of the conventional abrasives for the cmp process can be selected . preferably , however , the abrasive is selected from the group consisting of ceria ( ceo 2 ), colloidal silica ( sio 2 ), fumed silica ( sio 2 ), alumina ( al 2 o 3 ), and mixtures thereof . preferably , the abrasive has a particle size ranging from 30 nanometers ( nm ) to 1 , 000 nm , more preferably 50 nm to 500 nm , and can be used in an amount ranging from 0 . 5 wt . % to 20 wt . %. in a preferred embodiment , the slurry composition has a ph ranging from 5 . 0 to 8 . 0 , more preferably from 6 . 0 to 7 . 5 . fig2 b shows a diagram illustrating the abrasive - polymer complex . meanwhile , a basic compound should additionally be used as a neutralizer so that polymeric carbon compounds , such as poly ( acrylic acid ) can be activated in the slurry composition . here , the basic compound may be ammonium hydroxide , a hydroxide of alkali metals , such as potassium hydroxide and ammonium hydroxide , or an organic salt selected from the group consisting of mea ( monoethanol amine ), dea ( diethanol amine ), and tea ( triethanol amine ), and mixtures thereof . in addition , there is provided a method for polishing surface of a dielectric film without step difference using the above - described cmp slurry composition . in the method for polishing the surface of the dielectric film , the above - mentioned slurry composition for cmp process with high planarity is used instead of a conventional cmp slurry composition in order to remove a step difference still remaining after conventional cmp process to achieve planarity more than 0 . 90 , preferably more than 0 . 95 ( t 2 & lt ; 0 . 05t 1 in equation 1 ). the method includes forming one or more patterns on a substrate , filling dielectric material between patterns to form dielectric film , and performing a cmp process on the entire surface of the formed dielectric film the slurry composition described hereinbefore . the cmp process can be one selected from the group consisting of shallow trench isolation ( sti ) cmp process , inter layer dielectric ( ild ) cmp process and inter - metal dielectric ( imd ) cmp process . the polishing method of the present invention may be applied to fabrication of semiconductors such as logic devices , memory chips , or non - memory chips , for example . fig3 a is a diagram illustrating a process for removing a step difference by a cmp process using a slurry composition of the present invention . in the method of the present invention for polishing the surface of a dielectric film , an abrasive - polymer complex participates in different modes according to the height of the step difference caused by a pattern formation . that is , the abrasive - polymer complex in the region having high step difference is transformed from a circular shape into a wide - spread shape when it contacts directly with a pad under pressure . as pressure is applied to the pad , the number and size of the polishing particles contacting a dielectric film ( a film to be polished ) becomes relatively larger , i . e ., the contact area becomes larger . as a result , the slurry composition removes the high step difference chemically and / or mechanically . however , the abrasive - polymer complex in the region having low step difference has a tendency to keep its original circular shape , and the number of particles contacting the dielectric film ( film to be polished ) becomes smaller . since the abrasive - polymer complex absorbs much of an external pressure , the external pressure is not applied to the dielectric film ( film to be polished ). as a result , the dielectric film in the region having the low step difference is scarcely polished , while the high step difference is removed . fig3 b is a diagram illustrating a state when much of the step difference is removed . the region having a low step difference is not polished , and its initial state is kept almost as it was . fig3 c is a diagram illustrating a state when the initial step difference is completely removed . the abrasive - polymer complex is distributed with a wide - spread shape over the entire region of the interlayer dielectric film . in this moment , since the polishing rate of the dielectric film is relatively slower than that of removing the initial step difference , an auto - stop cmp function can be added . in other words , the slurry compositions of the present invention have a tendency not to easily polish the dielectric film by an external pressure after the initial step difference is completely removed . fig3 d is a diagram illustrating a state after the planarization is completely finished . the step difference after the polishing process ( sh f ), t 3 is almost 0 . hereinafter , the present invention will be described in more detail referring to examples below , which are not intended to limit the scope of the present invention . 79 wt . % of deionized water was added to 20 wt . % of a conventional slurry composition including fumed silica ( sio 2 ) having a particle size of 20 nm to 300 nm ( for example , hs - 8005 - hx , a product of hitachi co ., ltd ., or similar series thereof ). thereafter , 1 . 0 wt . % of carbopol 940 was added , with stirring to prevent aggregation thereof . the resulting mixture was further stirred for about 30 minutes until it was completely mixed and stabilized , thereby obtaining a slurry composition having a ph of 6 . 5 . 69 . 5 wt . % of deionized water was added to 30 wt . % of a conventional slurry composition including colloidal silica ( sio 2 ) having a particle size of 20 nm to 300 nm ( levasil 50ck / 30 % v1 , a product of bayer co ., ltd .). thereafter , 0 . 5 wt . % of carbopol 941 was added , with stirring to prevent aggregation thereof . the resulting mixture was further stirred for about 30 minutes until it was completely mixed and stabilized , thereby obtaining a slurry composition having a ph of 5 . 5 . 48 wt . % of deionized water was added to 50 wt . % of a conventional slurry composition including alumina having a particle size of 20 nm to 300 nm ( ss - 25 , a product of cabot co ., ltd .). thereafter , 2 wt . % of carbopol 940 was added , with stirring to prevent aggregation thereof . the resulting mixture was further stirred for about 30 minutes until it was completely mixed and stabilized , thereby obtaining a slurry composition having a ph of 7 . 5 . 79 wt . % of deionized water was added to 20 wt . % of a conventional slurry composition including ceo 2 having a particle size of 20 nm to 300 nm ( gpl - c s2125 , a product of showa - denko co ., ltd .). thereafter , 1 . 0 wt . % of carbopol 941 was added , with stirring to prevent aggregation thereof . the resulting mixture was further stirred for about 30 minutes until it was completely mixed and stabilized , thereby obtaining a slurry composition having a ph of 6 . 0 . b . polishing process of dielectric film using the disclosed slurry composition a cmp process on the surface of an interlayer dielectric film was performed with a hard pad at polishing pressure of six pounds per square inch ( psi ) and at a table revolution rate of 80 rotations per minute ( rpm ) ( rotary type cmp equipment ) using the slurry composition prepared in example 1 . herein , the step difference observed was 10 , 000 å before the cmp process ( sh i ), and was decreased to 200 å after the cmp process ( sh f ). the degree of planarity obtained by applying the sh i and sh f values to equation 1 was 0 . 98 . a cmp process on the surface of an interlayer dielectric film was performed with a hard pad at polishing pressure of 6 psi and at a table revolution rate of 80 rpm ( rotary type cmp equipment ) using the slurry composition prepared in example 2 . herein , the step difference observed was 10 , 000 å before the cmp process ( sh i ), and was decreased to 500 å after the cmp process ( sh f ). the degree of planarity obtained by applying the sh i and sh f values to equation 1 was 0 . 95 . a cmp process on the surface of an interlayer dielectric film was performed with a hard pad at polishing pressure of 3 psi and at table revolution rate of 80 rpm ( rotary type cmp equipment ) using the slurry composition prepared in example 3 . herein , the step difference observed was 15 , 000 å before the cmp process ( sh i ), and was decreased to 1 , 000 å after the cmp process ( sh f ). the degree of planarity obtained by applying the sh i and sh f values to the equation 1 was 0 . 93 . a cmp process was performed on surface of an interlayer dielectric film with a hard pad at polishing pressure of 3 psi and at table revolution rate of 80 rpm ( rotary type cmp equipment ) using the slurry composition prepared in example 4 . herein , the step difference was 15 , 000 å before the cmp process ( sh i ), and was decreased to 800 å after the cmp process ( sh f ). the degree of planarity obtained by applying the sh i and sh f values to the equation 1 was 0 . 95 . as described above , since the slurry composition for cmp process with high - planarity of the present invention can remove more than 90 % of the step difference through cmp process . furthermore , it can be useful for fabrication of semiconductor devices having a fine circuit pattern with a circuit line width of less than 100 nm that cannot be formed by cmp process using conventional cmp slurry composition . the foregoing description is given for clearness of understanding only , and no unnecessary limitations should be understood therefrom , as modifications within the scope of the invention may be apparent to those having ordinary skill in the art .