referring now to the figures of the drawing in detail and first , particularly , to fig1 thereof , there is shown a schematic cross section through an electronic component 1 of a first embodiment of the invention . the reference numeral 2 identifies a semiconductor chip . the reference numeral 3 identifies a plastic of a substrate 4 . the plastic 3 of the substrate 4 has a glass transition temperature range t g1 . the semiconductor chip 2 has a passive rear side 5 . a plastic package molding compound 6 completely covers the rear side of the semiconductor chip in this embodiment of the invention and embeds the semiconductor chip 2 in the plastic package molding compound 6 on one side of the substrate 4 . the plastic package molding compound 6 has a glass transition temperature range t g2 . in this embodiment of the invention , the glass transition temperature range t g1 of the plastic 3 of the substrate 4 lies between 165 and 175 ° c . and is achieved by a polymer additive in an epoxy resin of the substrate 4 . apart from the plastic 3 , the substrate 4 has a glass fiber mat , whereby the coefficient of thermal expansion of the substrate 4 in the x and y directions is adapted to the coefficient of thermal expansion of the semiconductor chip 2 . it will be understood that the mutually orthogonal directions x , y , and z as used in this specification refer to the cartesian coordinate system . the semiconductor chip 2 in this embodiment of the invention consists of silicon with a coefficient of thermal expansion of approximately 4 ppm /° c . and the coefficient of thermal expansion of the glass - fiber - reinforced material has a value of approximately 5 ppm /° c . in the x and y directions in this embodiment of the invention . consequently , the microscopically small flip - chip contacts 8 , which are connected to contact terminal areas 10 of a wiring pattern 9 on the substrate 4 , are protected against being torn off , since the coefficient of thermal expansion of the semiconductor material and of the glass - fiber - reinforced substrate in the x and y directions are approximately the same . the reference numeral 7 identifies the active upper side of the semiconductor chip 2 , with flip - chip contacts 8 arranged on it . the reference numeral 11 identifies wiring lines , which are connected on the one hand to the contact terminal areas 10 and on the other hand to contact transition areas 12 of the wiring pattern 9 . the contact transition areas 12 form an electrical connection of the wiring pattern 9 to contact vias 13 , which extend through the substrate 4 and are connected on the outer side 28 of the substrate 4 to external contact areas 14 . these external contact areas 14 bear macroscopically large external contacts 15 , which comprise either solder balls 21 or contact bumps 22 . the glass transition temperature range t g2 of the plastic package molding compound 6 has higher temperatures than the glass transition temperature range t g1 of the substrate . it is consequently ensured that , when the external contacts 15 are soldered on , which takes place at temperatures between 200 and 250 ° c ., instances of bowing of the substrate 4 and of the plastic package molding compound 6 are compensated by the heavy weight of the plastic molding compounds , with the result that an electronic component 1 provided with planar upper sides can be provided . for this purpose , the proportion by volume of the plastic package molding compound 6 in relation to the proportion by volume of the plastic 3 of the substrate 4 is provided as at least 3 : 1 , in order that the plastic package molding compound 6 is decisive for the planarity of the electronic component 1 during the melt - soldering of the solder contacts . the plastic package 26 is formed with a 45 ° bevel 24 on its upper edges 25 , which may be made for example when a panel is separated ( diced ) into the individual electronic component 1 shown here by a sawing operation using a profiled saw . fig2 shows a schematic cross section through an electronic component 1 of a second embodiment of the invention . components with the same functions as in fig1 are identified by the same reference numerals and are not separately explained . the main difference between the embodiment of fig1 and of fig2 is that the semiconductor chip 2 is arranged with its passive rear side on the wiring structure . the rear side of the electronic component 1 may be connected by means of a solder layer 29 or by means of a conducting adhesive layer and the contact terminal area 10 and also the wiring lines 11 and the contact via 13 to an external contact 15 , which is connected for example to the lowest switching potential for the semiconductor chip 2 . the integrated circuit on the active upper side 7 of the semiconductor chip 2 is electrically connected by its contact areas 17 by means of bonding connections 18 to contact terminal areas 10 or to bonding fingers 20 of the wiring pattern 9 on the substrate . consequently , the microscopically small contact areas 17 of the semiconductor chip 2 are electrically connected to the external contacts 15 by means of bonding connections 18 , contact terminal areas 10 and contact vias 13 . it is also the case in this embodiment of the invention that the semiconductor chip 2 wired to the substrate 4 is embedded in a plastic package molding compound 6 , which has a higher glass transition temperature range t g2 than the plastic 3 of the substrate 4 . fig3 shows a schematic cross section through an electronic component 1 of a third embodiment of the invention . components with the same functions as in the previous figs . are identified by the same reference numerals and are not separately explained . the difference of the third embodiment in comparison with the embodiments of fig1 and 2 is that the substrate 4 has no contact vias . rather , the substrate 4 of the third embodiment has a bonding channel opening 19 , the semiconductor chip 2 being attached with its active upper side 7 on the substrate 4 by an insulating adhesive layer 30 . the contact areas 17 of the electronic component 1 are arranged in the region of the bonding channel opening 19 of the substrate 4 on the active upper side 7 of the semiconductor chip 2 . in this embodiment of the invention , the wiring pattern 9 of the substrate 4 is arranged on the side of the external contacts 15 and has in the edge region of the bonding channel opening 19 bonding fingers 20 , from which bonding connections 18 lead to the contact areas 17 of the semiconductor chip 2 . the bonding channel region 16 with the bonding wires 18 in the bonding channel opening 19 is covered by a plastic package molding compound 6 . this plastic package molding compound 6 may be applied to a not pre - heated substrate 4 before or at the same time as the plastic package molding compound 6 for covering the rear side 5 of the semiconductor chip 2 . after the molten plastic package molding compound 6 has cooled down , the substrate 4 is initially bowed , on account of the higher coefficient of thermal expansion of the plastic package molding compound 6 than the coefficient of thermal expansion in the x and y directions of the glass - fiber - reinforced substrate 4 . however , during the melt - soldering of the external contacts 15 on the external contact areas 14 , the entire component is heated to 200 to 250 ° c ., with the result that both plastic molding compounds 3 and 6 soften and the electronic component 1 is leveled with its upper sides and , on account of the earlier solidifying of the plastic package molding compound 6 in comparison with the plastic 3 of the substrate 4 , the finished electronic component 1 remains completely planar . fig4 shows a schematic cross section through an electronic component 1 of a fourth embodiment of the invention . components with the same functions as in the previous figs . are identified by the same reference numerals and are not separately explained . the fourth embodiment differs from the third embodiment in that exposed conductor tracks of the wiring pattern 9 protrude into the bonding channel opening 19 of the substrate 4 and are connected to the contact areas 17 of the semiconductor chip 2 . it is possible by these exposed wiring lines 11 to produce a still flatter component , since no bonding arches are required for bonding wire connections . the dimensions of the individual components in fig1 to 4 are in no way true to scale ; rather , the thickness of the substrate d is only several 10s of μm , while the thickness d of the plastic package molding compound 6 is at least 100 μm . the grid dimension r between the external contacts 11 is around 1 mm , while the grid dimension r between the flip - chip contacts of fig1 is around several 10s of μm . fig5 to 9 show results of method steps when simultaneously producing a number of electronic components 1 of embodiments of the invention which are schematically represented in fig1 to 4 . components with the same functions as in the previous figs . are identified by the same reference numerals in fig5 to 9 and are not separately explained . fig5 shows the basic diagram of a substrate 4 , which is loaded with semiconductor chips 2 and wired . the substrate 4 comprises a plastic 3 , which is glass - fiber - reinforced and has a glass transition temperature t g1 which lies between 165 and 175 ° c . the substrate strip 4 has a thickness d of several 10s of micrometers . fig6 shows as a basic diagram the application of a molten plastic package molding compound 6 to the not heated - up substrate 4 loaded with semiconductor chips 2 for the production of a panel 23 . during the application of the plastic package molding compound 6 , which comprises between 60 and 90 % filler material , the plastic package molding compound 6 is molten and distributes itself in the mold 27 while embedding the semiconductor chips 2 on the substrate 3 evenly in the mold , in that for example a doctor blade 31 , which is identified as a dashed line , is applied to one side of the substrate 4 by means of a screen printing frame 32 , pressing the plastic package molding compound 6 through the screen printing frame 32 . another method provides that the plastic package molding compound 6 is introduced at high pressure into a closed mold 27 , the high pressure of an injection - molding machine ensuring that all the cavities between the semiconductor chips 2 , the wiring lines and the substrate 4 are filled with a plastic package molding compound . the plastic package molding compound 6 has a glass transition temperature range t g2 which is higher than the glass transition temperature range t g1 of the substrate . fig7 shows a basic diagram of the panel 23 after the plastic molding compounds 3 and 6 of the substrate 4 and the plastic package 26 have cooled down , before removal from the printing or casting mold 27 . on account of the high coefficient of expansion of the hot plastic package molding compound 6 , this plastic molding compound is reduced more in its two - dimensional expansion than the plastic 3 of the not pre - heated substrate 4 , with the result that the panel 23 bows , as shown in fig7 . the panel 23 , which can be removed from the mold 27 , consequently does not have planar surfaces and , on the assumption that an acceptable panel 23 may only have minimal deviations from planarity , is considered as scrap . fig8 shows a basic diagram of the pre - bowed panel 23 after positioning of solder balls 21 on intended positions of the substrate 4 . such solder balls 21 may be applied to the outer side of the substrate 4 with the aid of a vacuum tool after turning over the panel 23 , as shown in fig8 , each solder ball 21 being kept in position with the aid of the vacuum tool until adhesive flux provisionally fixes the solder ball 23 . fig9 shows a basic diagram of a panel 23 leveled during the melt - soldering of the solder balls 21 to form external contacts 15 , for a number of electronic components 1 . on account of the temperature during the melt - soldering of the solder balls 21 , the panel 21 is leveled on a planar underlying surface ( not shown ), on account of its own weight , and completely planar electronic components 1 can be formed . the melting temperature is 200 to 250 ° c . and consequently above the higher glass transition temperature range t g2 of the plastic package molding compound 6 . after the solder balls 21 have been soldered in to form external contacts 15 , the plastic package molding compound 6 is cooled down and is first to pass through the glass transition temperature range t g2 , before the plastic 3 of the substrate 4 , with the result that the plastic package molding compound 6 determines the ultimate shape of the components . before separating the now completely planar panel 23 with external contacts 15 into individual electronic components 1 , the plastic molding compounds 3 and 6 of the substrate and of the plastic package 26 are subjected to a pre - crosslinking or pre - curing thermal treatment , which in this embodiment of the invention involves renewed heating - up of the panel 23 from room temperature to 90 ° c . at a heating - up rate of 1 ° c ./ min and keeping it at 90 ° c . for 15 minutes . after the pre - curing , the panel 23 can be transported and further processed as desired . before the separation into individual electronic components , a final curing is carried out at a temperature of 160 ° c . for a time of approximately 1 hour . after that , the plastic molding compounds are crosslinked in such a way that the panel 23 can be divided into individual electronic components 1 with the aid of a sawing operation along the separating lines 33 . corresponding profiled saw blades allow a bevel of , for example , 45 ° to be beveled at the same time onto the four outer edges of the plastic package molding compound 6 .