we discuss a sample holder for the micro analysis of a sample item . the holder is shaped like a hockey puck , with a top section and a bottom section sandwiching the sample item with a mask , all contained within the hockey puck - shaped holder . this sample holder is a non - consumable mask fixture used for tem sample preparation . it is clamped about the specimen and is self - sealing , eliminating the need for masking and mounting waxes as well as the solvents needed to remove them . integral to the fixture is an etch - resistant window to allow in situ observation of the etch progress . when etching certain materials such as silicon , light will begin to be transmitted through the sample as the eroded portion approaches a usable thickness . by providing a path for a high intensity light in the fixture , the transmission of light through the sample can be monitored either manually or automatically . referring now in specific detail to the drawings , and particularly fig1 , there is illustrated a mask fixture 100 for tem sample preparation . the specific geometry of the mask fixture 100 is tailored to the thickness of the specimen and the area to be etched . the mask fixture 100 is essentially a three piece fixture : a puck - shaped bottom 180 , a puck - shaped top 120 and a sapphire window 170 . note that we discuss a hockey puck , or disc , shape , but those with knowledge in the art will appreciate that other shapes can be advantageously used within the spirit and scope of the invention . in a preferred embodiment , the puck - shaped base 180 is constructed of pvdf ( polyvinylidene fluoride ) and is fabricated with a recess 182 which holds an etch - resistant wafer 170 made from sapphire . in other embodiments , the base 180 may be constructed of polytetrafluoroethylene ( ptfe ), polyethylene , or any other suitable hydrofluoric acid resistant material . additionally , the sapphire wafer 170 shown here may be substituted with cvd silicon carbide or cvd glassy carbon film deposited onto a transparent substrate . other materials may be contemplated that are transparent to visible light . the function of the disc 170 is to protect the sample by providing adequate support when being clamped . when the etch - resistant wafer 170 is placed in the recess 182 , it fills the entire recess 182 and does not extend above the top surface of the bottom fixture 180 . this is to facilitate a complete seal when the top and bottom fixtures are secured together . the recess 182 is formed with a small aperture 172 , or via , through which light can pass . the aperture 172 extends through the base 180 , with the light source emanating from underneath the fixture bottom 180 . when the sapphire 170 is situated within the recess , light is transmitted up through the aperture 172 and through the sapphire window 170 . someone observing from above the fixture 100 with a microscope can tell when the etching of the sample 190 has progressed to the point where the beam of light is visible through the sample 190 . this indicates that the sample is at the desired thickness ; therefore , the etching is complete . the top of the fixture 120 , also constructed of pvdf and puck - shaped , contains a reservoir 130 for the etchant . note that the etchant is preferably a liquid etchant , but a powder etchant , and even a gas etchant can also be used , in keeping with the spirit and scope of the invention . the reservoir 130 is made up of two cones . the top cone 124 has a 90 degree inclusive angle and extends to half - way through the puck 120 . the second cone 126 has a 120 degree inclusive angle and begins at an intersection of the first cone 124 and terminates with a small hole 128 at the bottom . the small hole 128 is positioned directly in line with the aperture 172 running through the fixture bottom 180 , providing a direct line of sight to the light beam emanating up from beneath the fixture bottom 180 . the bottom cone 126 is shallower than the top cone 124 to facilitate the upward release of bubbles as the etching proceeds , when a liquid etchant is used . below the small aperture 128 in the cone , facing down , the surface of the bottom cone 126 forms a very shallow cone which , when put in assembly , allows the sample 190 to contact the edge of the small aperture 128 first . upon tightening , this edge is compressed against the sample 190 to a pre - set amount resulting in a fluid - tight seal . the base 180 and top 120 fixtures can be secured with screws 190 as shown , or with a clamp , or other type of interconnect . this being done , the etchant is applied to the reservoir 130 and flows down through the cone - shaped reservoir 130 , through the small aperture 128 and onto the wafer 190 . the etch progress can be monitored through a microscope looking down through the reservoir 130 in situ . the illumination is provided by a high intensity light source passing up through the hole 172 in the base puck 180 and through the sapphire 170 on which the sample 190 rests . although we limit our examples to visible light being transmitted , other wavelengths could be used for sample specific transmission . the illumination allows an observer to easily determine when the etching process has etched the sample 190 to a desired thickness . the sample 190 may be a silicon wafer , germanium or other similar material . the function of this fixture depends upon the characteristic of silicon and similar materials whereby they begin to become transmissive to light when thinned to tens of microns in thickness . at completion , the remaining etchant is drained from the reservoir 130 and the sample 190 removed and rinsed without any further solvents or steps necessary . the fixture 100 is immediately ready for the next sample 190 . real savings in labor and equipment are realized in that the only hardware necessary for this process is the etch fixture 100 shown in the illustrations and standard lab equipment such as the microscope and light source . referring now to fig2 a we provide a close - up cross - section view of the sample 190 situated above the sapphire backing disk or window 170 . this close - up view provides a clearer view of the shallow angle where the contact is made with the sample 190 by the shallow cone as previously discussed . fig2 b is a cross - section view showing the positioning of the different components of the mask fixture , the sample , and the light source . fig2 b introduces one optional component of the invention not previously discussed . a mirror 230 is used to re - direct the high intensity light source upwards through the sapphire 170 . fig3 shows a viewer peering through a microscope 320 to determine the etching progress . fig3 also shows the mirror 230 used to reflect a light beam or other high intensity light source upwards through the sapphire window 170 . therefore , while there has been described what is presently considered to be the preferred embodiment , it will understood by those skilled in the art that other modifications can be made within the spirit of the invention . the above description of an embodiment is not intended to be exhaustive or limiting in scope . the embodiment , as described , was chosen in order to explain the principles of the invention , show its practical application , and enable those with ordinary skill in the art to understand how to make and use the invention . it should be understood that the invention is not limited to the embodiments described above , but rather should be interpreted within the full meaning and scope of the appended claims .