inventors have found and established an association between a v th degradation value in the initial phase of a nbti curve of pmosfet and power spectrum density amplitude of 1 / f noise , and has further provided a novel method of testing reliability of a semiconductor device based on the association . investigations on the nbti mechanism have been lasted for more than 40 years , it is commonly considered that the physical mechanism of nbti is a co - contribution of generation of interface state n it and trapping into near - interface bulk trap n t . for generation of the interface state , a commonly accepted reaction - diffusion model and a modified model thereof consider that depassivation of si — h bonds at the interface and a subsequent dimerization and diffusion processes of h particles in a dielectric layer are cooperative , which causes that shift of the threshold voltage may be evolve with stress time in the form of power - law . the interface reaction and the dimerization process are rapid , and the subsequent degradation will be dominated by the long - term diffusion process . therefore , there is a transition of nbti degradation exponent from short to long period . on the other hand , trapping into near - interface bulk traps is an extremely fast saturated process , which is not sensitive to time , but mainly depends on the applied bias voltage on the gate . considering co - contribution of the above two parts of defects , the degradation of v th with stress time may be expressed as : δ ⁢ ⁢ v th = - δ ⁢ ⁢ q ot ⁡ ( t ) + δ ⁢ ⁢ q it ⁡ ( t ) c ox = δ ⁢ ⁢ v th , ini + bt n ( formula ⁢ ⁢ 1 ) where δq ot ( t ) and δq it ( t ) represent degradations of bulk trap charges and interface state charges with time , respectively ; c ox is a capacitance of the gate oxide layer of the device ; δv th , ini is initial threshold voltage degradation ; b is a constant in a particular electric field ; and n is an exponent of the time t , which is related to the type of h particles diffused in the bulk and the existence of the bulk traps . trapping into pre - existing bulk traps n t mainly results in the initial threshold voltage degradation δv th , ini of the nbti . since thickness - normalized initial v th degradation value δv th , ini / eot is proportional to the bulk trap density n t , δv th , ini may be expressed as : δ ⁢ ⁢ v th , ini = e ⁢ ⁢ o ⁢ ⁢ t · q · f ⁡ ( e ox ) · n t ɛ ( formula ⁢ ⁢ 2 ) where eot represents an equivalent oxide thickness of the gate oxide ; q represents electric quantity of a single electron ; f ( e ox ) represents a probability that the bulk traps are occupied by holes under a certain gate oxide electric field ; and ∈ represents a dielectric constant of sio 2 . on the other hand , the 1 / f noise is a common low frequency noise form in the semiconductor device . the main sources of 1 / f noise are the bulk traps within gate dielectric . the near - interface trap randomly captures and releases charges , which causes random fluctuations of channel mobility and the number of channel carriers . the time constant related to this process may result in a significant increase of the noise signal power in a low frequency band . in the current widely used uniform 1 / f noise model , a formula regarding the noise spectrum density and the bulk trap density is expressed as : n t = s id ⁢ c ox 2 ⁢ wlfg m 2 ⁡ ( v g - v th ) 2 ⁢ γ q 2 ⁢ kti d 2 ( formula ⁢ ⁢ 3 ) where n t represents the density of the bulk trap ; s id represents the noise spectrum density ; w and l are width and length of channel in a mos device , respectively ; g m is transconductance of the device ; r is an attenuation coefficient ; t is a testing temperature ; i d is a drain current passing through the channel under a noise testing bias ; q is electric quantity of a single electron ; and k is a boltzmann constant . if the noise testing on the plurality of samples is performed in the same gate electric field , values of c ox ×( v g − v th ) for respective samples are identical . thus , s id / i d 2 is proportional to the bulk trap density n t according to the uniform 1 / f noise model , which may be simply expressed as : where a is a parameter depending on the temperature and the gate electric field . formula 4 may be applied to formula 2 , so as to replace n t in formula 2 . then , a relationship of the initial threshold voltage degradation δv th , ini and the noise spectrum density s id may be obtained as : δ ⁢ ⁢ v th , init = k ⁢ e ⁢ ⁢ o ⁢ ⁢ t · s id i d 2 ( formula ⁢ ⁢ 5 ) where k is a correlated coefficient of δv th , ini / eot and s id / id 2 . if the plurality of samples which have the same gate dielectrics are measured at the same temperatures and in the same gate electric fields , the correlated coefficient k is a constant . that is , the thickness - normalized initial threshold voltage shift δv th , ini / eot is proportional to s id / i d 2 . formula 5 may be applied to formula 1 , so as to obtain a curve representing a degradation of the threshold voltage v th with the time t , i . e . a nbti curve as follows : for the high - k gate dielectric consisted of the same material , degradation tendencies of the threshold voltages for the plurality of different samples with time are identical . the degree of the degradation depends on the initial threshold voltage degradation δv th , ini at the short beginning . in a case that the degradation curve of the nbti for the first set of samples with time has been measured , the curve of the threshold voltage v th shift with the time t of the second set of samples may be calculated based on the measurement result of the 1 / f noise power spectrum , without substantially repeated measurements on other samples . hereinafter , a preferable embodiment of the method for testing reliability of the semiconductor device as described above will be discussed in detail . fig1 shows a schematic block diagram of a testing system used in the testing method according to the present invention . the testing system comprises an electric measurement system 1 , a noise measurement system 2 , and a switching 5 which selectively connects one of the electric measurement system 1 and the noise measurement system 2 to a sample 6 . the sample 6 is placed on a probe station ( not shown ). a source electrode , a drain electrode , a gate electrode , and a substrate of the mosfet are connected to the probe pins , respectively . the probe pins are connected to output terminals of the probe station . the switching apparatus 5 may use e . g . an 8 × 12 switch matrix 7174a purchased from the us keithley inc . the electric measurement system 1 may use e . g . a semiconductor parameter measurement system ki - 4200 / 2600 purchased from the us keithley inc ., which may be used for measuring an i - v characteristic of the device and the nbti characteristic of the device . the noise measurement system 2 may comprise a current preamplifier 3 ( e . g . a low - noise current preamplifier sr570 purchased from the us stanford research systems inc ., which uses a build - in accumulator dc power supply ), and a network analyzer 4 ( e . g . a fft network analyzer sr 770 purchased from the us stanford research systems inc ., which uses an external dc power supply ) connected to the current preamplifier 3 . fig2 shows a flowchart of a first embodiment of the testing method according to the present invention . firstly , one pmosfet may be manufactured as a set of samples according to a 65 nm process ( step s 10 ). the gate dielectric of the pmosfet may be sion or any of high - k dielectric materials selected from the groups consisted of hfo 2 , la 2 o 3 , al 2 o 3 , tio 2 , ta 2 o 5 , and zro 2 , and may also be high - k dielectric doped with metal elements . then , the samples may be placed on the probe station . the samples may be connected to the electric measurement system 1 by the switching apparatus 5 . a nbti stress of 125 ° c ., 9 . 5 mv / cm may be applied to the samples for 1000 s , so as to perform the nbti measurement ( step s 11 ). in order to avoid a recovery effect during the nbti testing , an on - the - fly online testing technique may be used for monitoring a variation of the threshold voltage in real time . finally , a curve of the threshold voltage v th shift with the time t , i . e . a curve of nbti degradation with time of the samples , may be obtained . next , the samples may be connected to the noise measurement system 2 by the switching apparatus 5 , so that the 1 / f noise power spectrum measurement and the drain current measurement may be performed on the samples ( step s 12 ). the 1 / f noise power spectrum measurement may be performed under the room temperature and in a linear area of an output characteristic curve i d - v d of the samples . in the 1 / f noise power spectrum measurement process , the gate electrodes of the samples may be connected to the external dc power supply by the switching apparatus 5 , the drain electrodes may be connected to the current preamplifier 3 in the noise measurement system 2 , and the source electrodes may be connected to the ground . when the build - in dc power supply in the current preamplifier 3 provides the drain electrodes with voltages , the current preamplifier 3 detects drain current signals passing through the channels of the samples , and amplifies the dc - component filtered drain current signals in low - noise level , and then transmits the amplified filtered drain current signals to the network analyzer 4 . after a transform by the network analyzer , a 1 / f noise half power spectrum density curve may be output directly . then , the half power may be squared , and the 1 / f noise power spectrum density curve s id ( f ) may be obtained . subsequently , the samples may be connected to the electric measurement system 1 again by the switching apparatus 5 . under the same bias condition for measuring the 1 / f noise , the drain current i d of the samples may be measured . then , the equivalent oxide thickness eot of the samples may be obtained according to the conventional method well - known in the art ( e . g ., by measuring the c - v curve of the samples ) ( step s 13 ). next , the correlation of the nbti curve and the noise power spectrum density curve of the samples may be analyzed ( step s 14 ). the initial v th degradation value δv th , ini at the beginning of the nbti curve and the parameters b , n of the nbti curve may be obtained by fitting the nbti curve measured in step s 11 using formula 1 which represents the shift of the threshold voltage with time . the value of s id at a particular frequency such as 25 hz may be obtained based on the noise power spectrum density curve s id ( f ) measured in step s 12 . the value of k may be calculated using the obtained initial v th degradation value δv th , ini , the obtained s id value at the particular frequency , the measured drain current i d and the equivalent oxide thickness eot , according to formula 5 . preferably , the first set of samples may comprise a plurality of pmosfet , and the correlation of the nbti curve and the noise power spectrum density curve of the samples may be analyzed according to the following steps . the first set of samples comprises e . g . 5 pmosfets . for all of the 5 pmosfets , the nbti curve may be measured in step s 11 , and formula 1 representing the shift of the threshold voltage with time may be used for fitting the nbti curve to obtain the initial v th degradation value δv th , ini at the beginning of the nbti curve . for all of the 5 pmosfets , the noise power spectrum density curve s id ( f ) may be measured in step s 12 to obtain the s id at the particular frequency such as 25 hz . a ratio s id @ 25 hz / i d 2 of the obtained s id ( i . e . the s id at the particular frequency ) to the measured drain current i d may be used as an x - coordinate , and the ratio δv th , ini / eot of the obtained initial v th degradation value δv th , ini to the eot of the gate dielectric , i . e ., the normalized initial v th degradation value δv th , ini , may be used as a y - coordinate , so as to draw a correlation curve of the normalized initial v th degradation value δv th , ini / eot v . s . s id @ 25 hz / i d 2 for all of the 5 pmosfets . as shown in formula 5 , the correlation curve presents a direct proportion . a slope of the correlation curve may be calculated as a common correlated coefficient k for the 5 samples . the above preferable approach of this step further improves the calculation result accuracy of the correlated coefficient k by processing experimental results of the plurality of samples . then , the second set of pmosfet samples may be prepared ( step s 15 ). for the second set of samples , the nbti curve of the samples may be obtained by measuring the 1 / f noise , without measuring the nbti curve directly . the first and the second sets of samples include the gate dielectric of the same material , but the thickness , doping of the gate dielectric and the interface conditions thereof may be different . with the measurement apparatus and method similar with those in step s 12 , the noise power spectrum density s id at the particular frequency ( 25 hz ) and the drain current i d under the bias condition of the noise power spectrum density measurement may be measured for each of the second set of samples ( s 16 ). in steps s 12 and s 16 , the measurements on respective samples are performed in the same gate electric field , so as to guarantee that densities of the channel charges are identical and comparable , and the same frequency may be selected as the particular frequency . furthermore , the low - frequency 1 / f noise measurement may be repeated for several times , and then an average thereof may be used for improving and assuring accuracy of the testing result , so that the accuracy of the prediction result for the nbti degradation may be significantly high . then , the measurement apparatus and method similar with those in step s 13 may be used for measuring the eot for each of the second set of samples ( step s 17 ). the parameters b , n and the correlated coefficient k obtained from the first set of samples in step s 14 and s id , i d measured in step s 16 may be used for calculating the nbti curve of each of the second set of samples ( step s 18 ). in step s 18 , the initial v th degradation value δv th , ini of each of the second set of samples may also be calculated according to formula 5 . fig3 shows a flowchart of a second embodiment of the testing method according to the present invention . in the second embodiment , the first and the second sets of samples are samples chosen from a plurality of semiconductor devices manufactured at the same batch ( step s 20 ). hence , the gate dielectric of the plurality of the semiconductor devices are with the same high - k dielectric materials , and also the eots thereof are approximately the same . therefore , the measurement of eot may be omitted . for example , in an integrated circuit including a processor of high - k gate dielectric , different dopings may be required for a circuit element of some module , in order to adjust the threshold voltage . one pmosfet may be selected as the first set of samples . one pmosfet on a critical path may be taken out for designing a boolean multiplier . steps s 21 - s 22 may be performed for the selected one pmosfet . steps s 21 - s 22 are the same as steps s 11 - s 12 as shown in fig2 , respectively . then , the correlation of the nbti curve and the noise power spectrum density curve for the pmosfet may be analyzed ( step s 23 ). the initial v th degradation value δv th , ini at the beginning of the nbti curve and the parameters b , n of the nbti curve may be obtained by fitting the nbti curve measured in step s 21 using formula 1 which represents the shift of the threshold voltage with time . the value of s id at the particular frequency such as 25 hz may be obtained based on the noise power spectrum density curve s id ( f ) measured in step s 22 . a value of k · eot may be calculated using the above obtained initial v th degradation value δv th , ini , the obtained s id at the particular frequency and the measured drain current i d , according to formula 5 . it has been known that in the batch of the semiconductor devices , the plurality of pmosfets have the same gate dielectric and eot . thus , k · eot should also be a constant . in the second embodiment , it is not necessary to measure or calculate respective values of the eot and the correlated coefficient k . then , in the plurality of pmosfets , a certain number of pmosfets may be selected as the second set of samples according to the practical requirement . steps s 24 and s 25 may be performed on each of the second set of samples . step s 24 is completely the same as step s 16 as shown in fig2 . the nbti curve of the second set of samples may be calculated using the parameters b , n obtained from the first set of samples in step s 23 and the constant k · eot and s id , i d measured in step s 24 , according to formula 6 ( step s 25 ). in step s 25 , the initial v th degradation value δv th , ini for each of the second set of samples may also be calculated according to formula 5 . the above is only the preferred embodiments of the present invention and the present invention is not limited to the above embodiments . therefore , any modifications , substitutions and improvements to the present invention are possible without departing from the spirit and scope of the present invention .