an embodiment of the present invention will be described below with reference to the accompanying drawings . fig7 is a block diagram illustrating the configuration of an organic el display device using pixel circuits according to an embodiment of the present invention . fig8 is a circuit diagram illustrating the concrete configuration of the pixel circuit according to the present embodiment . a display device 100 includes a pixel array section 102 having pixel circuits 101 arranged in an m by n matrix . the display device 100 further includes a horizontal selector ( hsel ) 103 , write scanner ( wscn ) 104 , drive scanner ( dscn ) 105 , and first and second auto - zero circuits ( azrd 1 ) 106 and ( azrd 2 ) 107 . the display device 100 still further includes data wirings dtl , scan line wsl and drive line dsl . the data wirings dtl are selected by the horizontal selector 103 and supplied with a data signal commensurate with brightness information . the scan line wsl is selected and driven by the write scanner 104 and serves as a first drive wiring . the drive line dsl is selected and driven by the drive scanner 105 and serves as a second drive wiring . the display device 100 still further includes first and second auto - zero lines azl 1 and azl 2 . the first and second auto - zero lines azl 1 and azl 2 are selected and driven respectively by the first and second auto - zero circuits ( azrd 1 ) 106 and 107 . the pixel circuit 101 according to the present embodiment includes a p - channel tft 111 , n - channel tfts 112 to 115 , a capacitor c 111 , light - emitting element 116 which includes an organic el element ( oled : electro - optical element ), and first and second nodes nd 111 and nd 112 . a first switching transistor is formed by the tft 114 , second switching transistor by the tft 113 , third switching transistor by the tft 115 , and fourth switching transistor by the tft 111 . it should be noted that the supply line of the supply voltage vcc ( supply potential ) corresponds to a first reference potential , and the ground potential gnd to a second reference potential . further , vss 1 corresponds to a fourth reference potential , and vss 2 to a third reference potential . in the pixel circuit 101 , the tft 111 , tft 112 serving as a drive transistor , first node nd 111 and light emitting element ( oled ) 116 are connected in series between the first reference potential ( supply potential vcc in the present embodiment ) and the second reference potential ( ground potential gnd in the present embodiment ). more specifically , the light emitting element 116 has its cathode connected to the ground potential gnd and its anode connected to the first node nd 111 . the tft 112 has its source connected to the first node nd 111 . the tft 111 has its drain connected to the drain of the tft 112 and its source connected to the supply potential vcc . the tft 112 has its gate connected to the second node nd 112 . the tft 111 has its gate connected to the drive line dsl . the tft 113 has its drain connected to the first node 111 and the first electrode of the c 111 . the tft 113 has its source connected to a fixed potential vss 2 and its gate connected to the second auto - zero line azl 2 . the capacitor c 111 has its second electrode connected to the second node nd 112 . the tft 114 has its source and drain connected between the data wiring dtl and second node nd 112 . the tft 114 has its gate connected to the scan line wsl . further , the tft 115 has its source and drain connected between the second node nd 112 and predetermined potential vss 1 . the tft 115 has its gate connected to the first auto - zero line azl 1 . as described above , in the pixel circuit 101 according to the present embodiment , the capacitor c 111 is connected as a pixel capacitance between the gate and source of the tft 112 serving as a drive transistor . the source potential of the tft 112 is connected to the fixed potential via the tft 113 serving as a switching transistor during a non - emission period . further , the gate and drain of the tft 112 are connected together , thus allowing for correction of the threshold vth . in the display device 100 according to the present embodiment , a material having a resistance lower than that of molybdenum is used for the gate wiring leading from the final stage ( output stage ) of the vertical scanner to the gate of the tft ( transistor ) in the pixel circuit 101 . molybdenum is typically used for this purpose . this prevents shading and banding caused by a pulse delay resulting from the resistance of the wiring through which a drive pulse is supplied to the tft gate in the pixel circuit 101 . this remedy against shading and banding is applied at least to the scan line wsl among the wirings , namely , the scan line wsl , drive line dsl and first and second auto - zero lines azl 1 and azl 2 . a first example of remedy will be described below . in this description , a case will be shown in which the remedy is applied to the scan line wsl . fig9 is a view for describing an example of remedy against shading and banding . in fig9 denotes a final stage ( output stage ) buffer of the write scanner 104 . this buffer is formed as a cmos buffer for pmos and nmos transistors pt 1 and nt 1 . on the other hand , the gate of the tft 114 serving as a switching transistor of the pixel circuit 101 is connected to the final stage of the write scanner 104 . a drive wiring 200 of the scan line wsl has a resistance r ′. in the present example , aluminum is used for the scan line wsl ( drive wiring 200 ) and data wiring dtl . the wiring resistance r ′ of the scan line wsl made of aluminum is lower than the resistance r of the same line wsl made of molybdenum . the resistance r ′ is about one tenth the resistance r . as described above , aluminum is used for both the scan line wsl and data wiring dtl in the present example of remedy , thus suppressing pulse signal delay and transient changes . incidentally , molybdenum is typically used for the scan line wsl , and aluminum for the data wiring dtl . these wirings and the pixel circuit 101 are laid out on a semiconductor substrate . however , using the same material , namely , aluminum , for the scan line wsl and data wiring dtl as in the present example results in a short circuit at an intersecting point of the scan line wsl and data wiring dtl . this short circuit in the wirings will be described with reference to fig1 a and 10b . fig1 a and 10b are views for describing a short circuit caused by a wiring pattern . fig1 a illustrates the structure around a gate section 114 a of the tft 114 ( refer to fig9 ) when molybdenum is used for the scan line wsl ( drive wiring 200 ), and aluminum for the data wiring dtl . on the other hand , fig1 b illustrates the structure around the gate section 114 a of the tft 114 when aluminum is used for both the scan line wsl and data wiring dtl . in fig1 a and 10b , 201 denotes an al / mo ( aluminum / molybdenum ) contact , and 202 an al / poly ( aluminum / polysilicon ) contact . as illustrated in fig1 a , the scan line wsl is formed with molybdenum , and the data wiring dtl with aluminum . as a result , no short circuit occurs at an intersecting point of the scan line wsl and data wiring dtl . however , if both the scan line wsl and data wiring dtl are formed with aluminum as illustrated in fig1 b , a short circuit occurs at an intersecting point of the two . to avoid a short circuit at an intersecting point of the scan line wsl and data wiring dtl , the present example employs a multi - layered wiring structure for the scan line wsl and data wiring dtl . this multi - layered wiring structure will be described with reference to fig1 . fig1 is a view illustrating a configuration example using a multi - layered wiring structure . as illustrated in fig1 , the data wiring dtl is brought up to a new layer 301 using a material such as tial . as a result , in this configuration , the new layer 301 is provided on the second wiring layer which is higher in level than the first wiring layer on which the scan line wsl ( drive wiring 200 ) is provided . further , an al / al ( new layer ) contact 302 is provided on the new layer 301 in this configuration . the new layer 301 is connected to the first terminal of the tft 114 via the contact 302 . still further , the scan line wsl is connected to the gate section 114 a of the tft 114 in this configuration . in the present example of remedy , the data wiring dtl transmits data signals using the new layer 301 , and the drive wiring transmits drive signals . it should be noted that both the scan line wsl and new layer 301 are made of the same material , namely , aluminum . in this case , the typical tft process can be used . as described above , a multi - layered wiring structure makes it possible to avoid a short circuit resulting from crossing of the wirings even when the scan line wsl and data wiring dtl are both made of aluminum . the operation of the above configuration will be described next with reference to fig1 a to 12f with emphasis on the operation of the pixel circuit . fig1 a illustrates a drive signal ds applied to the drive line dsl , fig1 b a drive signal ws applied to the scan line wsl , fig1 c a drive signal az 1 applied to the first auto - zero line azl 1 , fig1 d a drive signal az 2 applied to the second auto - zero line azl 2 , fig1 e the potential of the second node nd 112 , and fig1 f the potential of the first node nd 111 . the drive signal applied to the drive line dsl by the drive scanner 105 is maintained at high level . the drive signal ws applied to the scan line wsl by the write scanner 104 is maintained at low level . the drive signal az 1 applied to the first auto - zero line azl 1 by the first auto - zero circuit 106 is maintained at low level . the drive signal az 2 applied to the second auto - zero line azl 2 by the second auto - zero circuit 107 is maintained at high level . as a result , the tft 113 turns on , causing a current to flow through the tft 113 . this brings a source potential vs of the tft 112 ( potential of the node nd 111 ) down to vss 2 . as a result , the voltage applied to the light - emitting element 116 becomes zero , causing the same element 116 to stop emitting light . in this case , even if the tft 114 turns on , the voltage held by the capacitor c 111 , namely , the gate voltage of the tft 112 , remains unchanged . next , during a non - emission period of the el light - emitting element 116 , the drive signal az 1 applied to the first auto - zero line azl 1 is pulled up to high level while the drive signal az 2 applied to the second auto - zero line azl 2 is maintained at high level . this brings the potential of the second node nd 112 down to vss 1 . then , after the drive signal az 2 applied to the second auto - zero line azl 2 is switched back to low level , the drive signal ds applied to the drive line dsl by the drive scanner 105 is switched back to low level only for a predetermined period of time . this causes the tft 113 to turn off and the tfts 115 and 112 to turn on . as a result , a current flows through the tfts 112 and 111 , raising the potential of the first node nd 111 . then , the drive signal ds applied to the drive line dsl by the drive scanner 105 is switched to high level , and the drive signal az 1 to low level . as a result , the threshold vth of the drive transistor tft 112 is corrected , bringing the potential difference between the second and first nodes nd 112 and nd 111 to vth . this condition is maintained for a predetermined period of time , after which the drive signal ws applied to the scan line wsl by the write scanner 104 is maintained at high level . data is written to the node nd 112 from the data wiring dtl . while the drive signal ws is at high level , the drive signal ds applied to the drive line dsl by the drive scanner 105 is switched to low level . then , the drive signal ws is switched to low level after a while . at this time , the tft 112 turns on , and the tft 114 turns off , allowing the mobility to be corrected . in this case , the tft 114 is off . the gate - to - source voltage of the tft 112 is constant . as a result , the constant current ids flows from the tft 112 into the el light emitting element 116 . this raises the potential of the first node nd 111 to a voltage vx where the current ids flows through the el light emitting element 116 , causing the same element 116 to emit light . also in the present circuit , the current vs . voltage ( i - v ) characteristic of the el element changes if the light emission time thereof is long . this causes the potential of the first node nd 111 to change as well . however , the gate - to - source voltage vgs of the tft 112 is maintained constant . as a result , the current flowing through the el light emitting element 116 remains unchanged . hence , even if the i - v characteristic of the same element 116 deteriorates , the constant current ids continues to flow . as a result , the brightness of the same element 116 remains unchanged . when the pixel circuit has a multi - layered wiring structure in which the scan line ( drive wiring ) and data wiring ( new layer ) are formed with aluminum as in the present example of remedy , the remedy is applied to the entire panel to prevent shading and banding resulting from a drive signal ( pulse ) delay due to wiring resistance . this ensures high quality image with minimal shading and banding . a second example of remedy will be described next . in the present example , a multi - layered wiring structure is used as in the first example . the scan line wsl ( drive wiring 200 ) is formed with ag ( silver ), and the data wiring dtl with aluminum . a wiring resistance r ″ of the scan line wsl made of silver is lower than the resistance r of the same line wsl made of molybdenum . this suppresses pulse signal delay and transient changes , thus providing the same effect as with the first example of remedy . further , the present embodiment provides the same effect as in the first and second examples of remedy when a multi - layered wiring structure is used as in the first and second examples and when a material lower in resistance than aluminum is used for the new layer 301 . for example , silver is used for the new layer 301 . this ensures reduced impact of wiring resistance on the signal propagation , thus providing high quality image with minimal shading and banding . it should be understood by those skilled in the art that various modifications , combinations , sub - combinations and alterations may occur depending on design requirements and other factors insofar as they are within the scope of the appended claims or the equivalents thereof .