the centrifuge arrangement shown diagrammatically in fig1 for carrying out the method in accordance with the invention has a drive motor 1 , which via gearing 2 drives the rotor 3 of the centrifuge apparatus . the rotor 3 is arranged in a vacuum tight rotor chamber 4 , and an armour ring 5 is provided between them to avoid danger to the operating person in the case of a rotor smash - up . the rotor 3 is mounted on a rotor shaft 24 which extends through a vacuum seal in the bottom plate 23 of the rotor chamber . the rotor chamber 4 - and the rotor 3 arranged in it - can be evacuated by means of a vacuum pump system which in the specific embodiment shown comprises a rotary pump 6 as a prevacuum pump and a diffusion pump 7 ; at 8 a vacuum indicating device is indicated ; reference numeral 9 indicates a gas metering valve for the purpose of controllably setting and maintaining a desired gas atmosphere in the rotor chamber 4 and in the interior of the rotor drive , which preferably communicates with the interior of the rotor 3 . the rotor drive has in a conventional manner means for controlling the speed of rotation with a tachometer sensor 10 mounted on the rotor drive shaft 24 and a speed of rotation regulation device 11 acting on the drive motor 1 . the control of a speed of rotation is simultaneously constructed to prevent excess speeds of rotation of the rotor 3 , which can lead to destruction of the apparatus . the lid 12 of the vacuum chamber 4 is provided with an electrically insulated bushing or grommet 13 for the electrical supply lead 19 ( fig2 ) for the heating of the rotor . the measurement of the temperature of the rotor 3 can be carried out in any suitable manner , for example radiometrically by means of an infrared detector responding to heat radiation from the rotor . fig2 shows an embodiment of a centrifuge rotor , suitable for the purposes of the present invention , with specific details . the rotor denoted by the general reference numeral 3 is made as a round body of titanium and can in its construction be made substantially in accordance with conventional zonal rotors . on the inner wall 14 of the rotor drive flat segment surfaces 15 of a thermally insulating material , which at the same time is mechanically strong , are provided . they are preferably made of mechanically strong sintered ceramic material . on these flat surfaces 15 there is a thin heating strip or band 16 , preferably of nickel , which has holding means 26 which can be according to any applicable techniques well known in the art ( not shown in detail ), for the semiconductor basic material wafers which are to be treated in accordance with the invention and are denoted diagrammatically by reference numeral 17 . the supply of current for the heating strip 16 is carried out in the embodiment shown via a graphite rod 19 connected in the conical or point bearing 18 centrally with the rotor 3 and having a further electrical connection 20 . the rotor 3 can for example be grounded . in the rotor lid 25 , which is connected by screw means with the main body of the rotor 3 , openings 21 are provided which communicate with the interior of the rotor chamber 4 ( see fig1 ) in such a manner that during operation of the centrifuge the rotor can be evacuated together with the rotor chamber 4 . via these connecting openings 21 it is also possible to supply the gas atmosphere , which can possibly be adjusted via the gas metering device 9 , into the interior of the rotor , for example for the purpose of bringing about the above - mentioned deposition of the doping substance by thermal decomposition of a gaseous compound of the doping material supplied via the metering device 9 . alternatively the predeposit of the doping substance onto the semiconductor wafer can be carried out by evaporation of a solid doping material or a solid doping coupound and deposition from the vapor phase ; for this purpose a source of evaporation 22 is preferredly centrally provided in the rotor . the segment plates 15 serve not only for thermal insulation but also simultaneously as flat support surfaces for the semiconductor basic material wafers 17 which are to be treated and support them to resist the high centrifugal forces occurring during use of the rotor with as little stress as possible . the typical manner of operation of the apparatus described , for example for doping semiconductor basic material in accordance with the method in accordance with the invention can occur as follows : after charging the centrifuge rotor with the semiconductor bodies to be treated and closing the apparatus , a suitable vacuum is generally produced for avoiding undesired contamination in the rotor chamber and therefore in the interior of the rotor . subsequently follows a so - called &# 34 ; predeposition &# 34 ;- method step including deposit of the respective doping substance on the semiconductor bodies . depending on the desired doping substance this deposition can for example be carried out by thermal decomposition on the heated substrate surface of a gaseous compound of the doping material which is supplied via the gas metering device 9 into the rotor chamber and therefore into the interior of the rotor ( as for example in the case of doping with phosphorus by deposition of the phosphorus by way of thermal decomposition of p 2 o 5 ), or by direct thermal evaporation of the material from the source of evaporation 22 coming from the rotor shaft . after the conclusion of this deposition the rotor is accelerated so that a high gravitational acceleration becomes effective between the impurity atoms on the surface of the semiconductor wafer 17 and the semiconductor substrate which gravitational acceleration in accordance with the basic principle of the invention brings about the controlled or monitored penetration of the impurity substance into the host lattice of the semiconductor . if the solid state sedimentation should be too low the ambient temperature can be raised for a short time by means of a heating device in order to obtain a sufficient speed of sedimentation approximately in the order of magnitude of a few microns per hour . in some cases the doping material which has been predeposited on the surface of the semiconductor material can also be caused to melt before or during the centrifuge treatment by heating . in every case the natural diffusion , also present in the case of the method in accordance with the invention , of a doping material becomes superimposed with the numerically substantially greater sedimentation movement of the doping atoms so that the doping step can be concluded after a comparatively short time depending on the respective desired depths of penetration . periods of centrifuging in the order of magnitude of a few minutes to hours are possible in accordance with specific factors ( nature of the semiconductor basic material , the doping substance , desired depth of penetration etc .). in any case by the present method in accordance with the invention it is possible to achieve a doping profile which in comparison with conventional diffusion technology is substantially narrower , since in the case of the method in accordance with the invention the known initial surface concentration of the doping material penetrates as a substantially coherent fraction into the interior of the basic material . in the manner already mentioned above it is possible , in order to enhance the operation and to increase the speed of sedimentation of the doping ions , to apply a magnetic field which is substantially parallel to the rotor axis ( that is to say the magnetic field strength is perpendicular to the tangential speed and to the plane of rotation ). as already mentioned the method in accordance with the invention and the apparatus described above are suitable both for doping and also for alloying purposes and also for the bonding of conductors with the active zones of semiconductor components . in this respect basically all the working operations mentioned can be effected successively one after the other in one and the same apparatus on the semiconductor compounds by producing for example firstly the internal pn - junctions by doping , following which alloying is used to produce the ohmic connecting contacts and then following this whiskers are bonded with the alloy contacts to produce the external supply lines . since for the doping treatment the highest gravitational accelerations are required while for the alloying operations the medium gravitational accelerations are required and for the bonding the lowest ones are needed , it is possible to ensure by use of a suitable choice of the speed of rotation that the alloying and bonding treatment has practically no influence on the doping distribution previously produced . thus , for example , as regards the order of magnitude for the doping the speed of rotation of 60 , 000 rpm can be used while for the alloying and the bonding speeds of rotation of 40 , 000 rpm and 20 , 000 rpm respectively can be used ; since the centrifugal gravitational accelerations correspond to the squares of the speeds of rotation , there are sufficient safety margins between the various types of treatment so that a mutual impairment or interference of the different types of treatment can be avoided . the method in accordance with the invention and the apparatus for carrying out has been explained above with reference to preferred embodiments . naturally the invention is not limited to the manners of operation and forms of apparatus described . the basic principle of the invention is instead suitable for application in all cases in which an impurity substance is to be incorporated in a basic or host material , provided that the substance to be incorporated and the basic material differ in their mass or their partial specific volume sufficiently in order to ensure a speed of sedimentation , sufficient for practical application , of the impurity substance into the basic material with the gravitational accelerations which can be achieved with speeds of rotation which are technically practicable . as regards the actual construction of the centrifuge device , its control of the drive and regulation , it is possible to make use of the extensive experience which has been gathered in the construction of ultracentrifuges and also as regards the advanced state of semiconductor technology as regards the properties of the semiconductor basic material used , the doping substances and the controlled and monitoring of the parameters of the doping and alloying operations significant for the electrical properties of the semiconductor components .