the present invention can be used to manufacture an interleaved comb of conductors known as a bradbury - nielson gate . such a gate consists of two electrically isolated sets of equally spaced conductors that lie in the same plane and alternate in applied voltage potential . these gates are generally recognized as having a much smaller effective field size than the more commonly used deflection plates . they can , for example , be used to modulate ion beams in time - of - flight mass spectrometers ( tof - ms ), to achieve mass - to - charge selection . such gates are also commonly used in ion mobility mass spectrometers to regulate the injection of ion packets into a drift tube . they have also been applied to hadmard time - of - flight mass spectrometers to modulate the source ion beam with a pseudorandom sequence of on and off pulses . because the detected signal is then a convolution of the tof mass spectra , the signal can be recovered by again applying the pseudorandom sequence to yield the single mass spectrum . the resulting resolution of the instrument depends on the modulation switching time , which in turn depends on the spatial extent of the fields affecting the region surrounding the chopper . therefore , reduction in the scale of the grid elements improves the resolution of the grid . fig1 , 2 , and 3 are illustrations of a silicon - on - insulator ( soi ) substrate or portion of a wafer 10 utilized for providing a substrate for a bradbury - nielson type grid manufactured according to the present invention . as best seen in the cross sectional views of fig2 and 3 , the wafer 10 consists of a silicon handle layer 12 , a buried silicon oxide layer 14 , and a highly doped silicon device layer 16 . the layers of the wafer 10 may have “ thickness ” dimensions of , for example , 350 um for the handle layer 12 , 2 um for the oxide layer 14 , and 100 um for the device layer 16 . the first step ( fig4 ) in a manufacturing process is to deposit and pattern a top - side photoresist layer 40 on the device layer 16 of the wafer 10 . numerous techniques are known for accomplishing this . in a preferred embodiment , this can be by spin coating the photoresist on to the wafer , exposing the photoresist to uv light through a mask , and then developing the photoresist to remove desired areas of a pattern that defines portions of the grid . one such pattern is shown in fig1 . the pattern includes , for example , ground plane area 30 , two bus bars 20 - l , 20 - r , two pads 26 - l , 26 - r , two sets of grid conductors 22 - l , 22 - r , and two sets of grid conductor anchors 24 - l , 24 - r where the end of the conductors are attached to the insulating supports 18 . the conductors are also supported at intermediate points by additional supports 18 . the ground plane areas 30 generally surround the periphery of the wafer 10 . they serve to electrically define the region surrounding the grid of conductors 22 . the bus bars 20 provide a way to electrically connect each of the two sets of grid conductors . bus bar 20 - l , located on the left side of the frame , will be used to interconnect conductors that terminate on the right side of the frame . likewise , bus bar 20 - r , located on the right side of the frame , is used to interconnect conductors that terminate on the left side of the frame . the grid conductor anchors 24 provide a place to terminate and support one end of the respective conductors . note that the anchors 24 are defined such that silicon is etched around the periphery on three sides thereof . this isolates the anchor providing an electrically open termination point . the second step ( fig5 ) is to remove the silicon exposed 46 by the removal of the photoresist in the first step . this must be done in an anisotropic manner in order to form conductors with uniform cross section and spacing . the preferred method is deep reactive ion etching ( drie ) using the bosch process . the silicon oxide layer acts as an etch stop . the next step ( fig6 ) is to attach the device side of the wafer 10 to a support wafer 52 . this step may be unnecessary , depending on the equipment used for manufacture . a handle - side photoresist layer 48 is then deposited and patterned to expose the area of the handle layer 12 to be removed . the pattern may include ( fig2 ) one or more supports 18 . the exposed silicon 50 is then removed using a drie process , stopping on the silicon dioxide layer 14 as shown in fig7 . the silicon dioxide lying beneath and between the conductors 22 is then removed by reactive ion etching , as shown in fig8 . the device is then removed from the support wafer 52 ( fig9 ). a final step typically includes the application of metal to the bond pads 26 to facilitate electrical connections to the gating grid . this can be achieved by evaporation or sputtering of a thin film of metal through a shadow mask for patterning . in a second embodiment , the invention can be used to fabricate uni - potential grids . in the preferred method , the grid is fabricated from an ordinary silicon wafer instead of the soi wafer used for the gating grid , but follows similar steps . fig1 is an illustration of a uni - potential grid manufactured according to the present invention . the grid consists of through holes 64 , conducting grid elements 66 , and the surrounding frame 60 . some conducting grid elements may be made wider to provide structural support throughout the grid structure , without adversely affecting the transmission of the grid . in this type of grid , the conductive elements run along a second axis which may be perpendicular to a first axis , or have another orientation along a preferred crystalographic direction . the first step ( fig1 ) is to deposit and pattern a photoresist layer 62 on a first side of the wafer 58 . numerous techniques are known for accomplishing this . in a preferred embodiment , this can be by spin coating the photoresist on to the wafer , exposing the photoresist to uv light through a mask , and then developing the photoresist to remove desired areas of the pattern . the wafer may have a thickness dimension of , for example , 350 um . the grid elements may have a dimension of 10 um or less and the holes may have dimensions on the order of 100 um . the second step is to remove the silicon exposed 64 by the removal of the photoresist in the first step . this must be done in an anisotropic manner in order to form conductors with uniform cross section and spacing . the preferred method is drie using the bosch process . by knowing the etch rate , the etch process can be stopped when the desired dimension 65 of the grid elements is reached for example , 100 um , as shown in fig1 . the next step ( fig1 ) is to grow a thermal oxide layer 68 on surfaces of the device to a thickness of , for example , 1 um . the oxide serves as a masking layer for subsequent wet etching of the silicon . the next step is to attach the previously etched side of the wafer 58 to a support wafer 70 ( fig1 ) a photoresist layer 72 is then deposited and patterned to expose the area of the wafer to be removed 74 . the exposed silicon oxide is then removed to the silicon 58 . ( fig1 ) the preferred method is a buffered , hf acid , oxide etch . drie or a silicon wet etch , such as koh , is used to remove the silicon 74 ( fig1 ). the remaining oxide is then removed with a buffered , hf acid , oxide etch or reactive ion etching with a recipe that is more selective to silicon oxide than silicon , producing the grid shown in fig1 . the final step ( fig1 ) is coating the grid with metal to provide a conducting surface 76 . numerous techniques are known for accomplishing this . in a preferred embodiment , this is accomplished by the vacuum evaporation of gold preceded by a chrome adhesion layer . yet other microfabrication techniques can be used to manufacture a grid ( either the bradbury - neilson or uni - potential type ) according to the invention . the previously described preferred embodiments involved removing material from a substrate to form the conductive grid elements . in this following embodiment , material is added to form the conductive grid elements , such as by using a lithographic galvanofornung aboforming ( lithographic electroform molding ) or liga process . fig1 is an illustration of a substrate 100 for a grid illustrating the first step of the liga based process . the substrate 100 may be an insulator or it may be non - insulating with an insulating layer 102 as shown . the conductive grid elements are then formed from metal by electroplating . the insulating layer 102 may be first coated with a thin metal seed layer 104 prior to the electroplating step . fig2 is an illustration of the second step . a resist layer 106 is deposited and patterned to form a mold 108 for the deposition of the conductive grid elements . numerous techniques , such as photo , x - ray , or e - beam lithography , are known for accomplishing this . the next step is to deposit the conductive grid elements 110 in the mold pattern as illustrated in fig2 . this may be done by electroplating , if the material is a metal , or the conductive grid elements may be formed of other materials such as a polymer . possible metals to use include gold , platinum , tungsten , copper , and nickel . the resist 106 is then stripped and the seed layer 104 , if used , is removed as illustrated in fig2 and fig2 . fig2 is an illustration of the final step . a hole is formed in the substrate under the conductive grid elements 110 by an etching or machining process . numerous techniques are known for accomplishing this . the above description and drawings have shown the resulting conductive elements in more or less square cross section . however , it is possible to modify the cross sectional shape of the conductors to increase the deflecting power without increasing the effective thickness of the grid ( which limits the mass range of the tof - ms in which the grid is to be placed , for example ). the drie processes used enable the etching aspect ratio of the conductors to be selected to optimize their cross sectional shape . for example , a trapezoidal cross section can result , which reduces scattering of deflected particles from the sides of the conductive elements , although this is not a limitation of the invention . grids that are manufactured using microfabrication techniques according to the invention can now be batch manufactured such that large numbers of grids are made at the same time on the same wafer , as shown in fig2 , thereby reducing the cost per grid microfabrication techniques typically utilize highly reproducible , patterning processes , with submicron resolution , e . g . photo , x - ray or electron beam lithography . microfabricated grids can have conductors with micron - scale and highly reproducible dimensions , which cannot be achieved by other manufacturing methods , such as electrodischarge machining or laser ablation . with microfabrication , feature dimensions are highly reproducible from device to device , and from wafer to wafer . hence , the microfabricated grid is expected to have better performance than those manufactured by other means , since performance is directly related to conductor size , shape and spacing . moreover , by fabricating the conductor elements in single crystal silicon , instead of a polycrystalline metal , the conductor elements are mechanically stronger and more rigid . single crystal silicon has a tensile strength and a modulus of elasticity which are comparable to steel , but a density that is comparable to aluminum . hence , silicon conductors are stiff , strong , and lightweight . these mechanical attributes , combined with microfabrication processing , enables them to be self - supporting at much greater length - to - width ratios than that which can be achieved with polycrystalline metal wire or film conductors . with intermediate supporting structures , the cross sectional dimensions can be reduced to 1 um or less , while still fabricating a grid structure large enough to handle a macroscopic particle beam . additionally , single crystal silicon micromechanical devices demonstrate no measurable fatigue . due to the high strength , low weight and high stiffness of silicon , silicon conductor elements undergo less displacement during operation than metal conductors of similar dimension , minimizing displacement caused variations in the field penetration into the surrounding region . microfabrication also enables the integrated manufacture of the conductors and their supporting substrate , eliminating the labor intensive and error prone assembly involved in other manufacturing methods , such as manual placement , winding or stretching of conductive wire elements and bonding of the conductor layer to a substrate . while this invention has been particularly shown and described with references to preferred embodiments thereof , it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the scope of the invention encompassed by the appended claims .