the invention is illustrated in more detail using the figures . shown are in : [ 0036 ] fig1 is a schematic view of a vacuum treatment chamber with inductive plasma excitement for the purpose of explaining the problems that form the basis of the present invention ; [ 0037 ] fig2 shows the occurrence of circular currents if a metallic or dielectric cylindrical , self - contained screen is envisioned in accordance with fig1 and the elimination of the circular currents according to the state of the art , furthermore , induced eddy currents that are not eliminated by the state of the art ; [ 0038 ] fig3 is a schematic view of screen used on a vacuum chamber according to the invention for treating a work piece according to the invention ; [ 0039 ] fig4 shows a preferred realization of the slots that are envisioned on the screen according to fig3 ; [ 0040 ] fig5 is a schematic view of a first embodied example of the vacuum treatment chamber according to the invention with the induction coil arranged inside the chamber ; [ 0041 ] fig6 is an analogous view of fig5 of a vacuum treatment chamber according to the invention with the induction coil located outside of the chamber ; and [ 0042 ] fig7 is a schematic view of another preferred embodied example according to the invention of the vacuum treatment chamber according to the invention , which is an analogous view of fig5 and fig6 for sputter - etching or sputter - coating of work pieces . [ 0043 ] fig1 shows a schematic depiction of a vacuum chamber 1 which has a cylindrical , dielectric wall 3 with the front side metallic ends 5 and 7 . on the one hand , the wall 3 consists of dielectric material in order to be able to electrically separate the front walls 5 and 7 from one another during electrode operation , for the purpose of capacitive plasma excitation , on the other hand , in order for an induction coil 9 with axis a , that is located outside of the chamber 1 , to be able to inductively inject power into the discharge chamber r . if during the treatment of a work piece , irrespective of the type of work that is performed , electrically conducting particles are released into the discharge chamber r , such as is the case e . g . during sputter - etching of conductive surfaces , during sputter - coating with conductive layers but also with pecvd processes , plasma - supported , reactive etching and coating processes , the inside lining , in particular the inside surface of the dielectric wall 3 becomes coated with an electrically conductive layer , as schematically depicted in 11 . therefore , with increasing thickness of the layer the power that is inductively injected into the discharge chamber r changes . if , as an exception , the induction coil is arranged inside the vacuum chamber , as indicated with the perforated line at 9 ′, and freely exposed to the discharge chamber r , an apparatus in which dielectric spacers in accordance with the wall 3 are now used for the electrical separation — possibly as plates 5 and 7 used as electrodes — the coil 9 ′ is covered with an electrically conducting interference layer , a coating that will peel off in the end and contaminate the treatment process . to remedy these difficulties it is known in the art , as has been outlined at the outset , to envision a screen apparatus 13 between the discharge chamber r and the induction coil 9 ′ or the dielectric wall 3 . on the one hand , the screen is intended to reduce the negative effects of the electrically conductive interference layer vis - à - vis the inductive power injection into the discharge chamber r , but also to ensure , on the other hand , the best possible inductive power injection . [ 0046 ] fig2 shows a schematic depiction of an induction coil 9 a according to 9 in fig1 which encloses at least one , due to the interference layer in accordance with fig1 electrically conductive screen 13 a . based on the induction effect , circular currents i x occur initially on the enclosed cylinder , in particular in the way that is depicted schematically in fig2 . moreover , eddy currents i w are also generated — as depicted — whose consequences cannot be ignored , as has been determined according to the invention . according to approaches that are known in the art the circular currents are eliminated by incorporating slots in the screen 13 a , as shown in fig2 with symbols 15 , 15 a , and the effectiveness of the induction power into the discharge chamber r is maintained as much as possible ; specifically , this is accomplished by realizing the screen 13 a from a dielectric material or by envisioning several , distributed , relatively wide slots 15 or 15 a . [ 0047 ] fig3 shows a screen 13 b according to the invention as it is used in connection with a chamber according to the invention as depicted — with the exception of the screen — in principle in fig1 . the screen 13 b is realized as a self - contained body , for example as a cylinder screen . its mantle surface is slitted with slots 17 arranged in close succession . the slots run , at least in one direction component , parallel to the axis a of the screen , preferably , as shown , parallel to the axis . in relation to a length unit e in the direction of the circumference of the screen 13 b the density of the slots 17 , i . e . the “ number of slots per cm ,” is at least 0 . 5 , preferably at least 1 , preferably even 1 . 5 . the high slot density massively reduces the development of eddy currents i w on the screen 13 b according to the invention ; this occurs irrespective of whether the screen consists of metal , such as aluminum , as preferred , or whether the screen is made of dielectric material that subsequently has an electrically conductive interference layer . the slots 17 are realized at a preferred width d of a maximum of 2 mm , preferably at the width of at the most 1 mm , for example , by way of a water - torching process . as seen in fig4 if viewed in the direction of the axis a , and visible on a cross - section of the screen according to fig3 the slots 17 are preferably inclined in relation to the radial direction r by φ , which additionally improves the protective effect of the screen with respect to the escaping of particles from the discharge chamber r . preferably the angle φ is between 30 ° and 40 ° in relation to the radial direction r . as mentioned previously , the screen 13 b consists preferably of metal , thus making it possible to operate the screen inside the chamber according to the invention and bound to a reference potential . primarily based on the high slot density s the used screen according to the invention consists of an integral part , which also simplifies its handling if the screen has to be replaced from a chamber according to the invention . this results in a considerable reduction of the down - times . as can be seen easily in the schematic depiction in fig5 and / or fig6 the induction coil 9 can be envisioned inside or — as seen in fig1 — outside of the treatment chamber 1 according to the invention using the screen 13 b , which is explained in fig3 and fig4 . a chamber according to the invention and / or the treatment method according to the invention will always be employed in such instances when an electrically conducting interference layer is formed in connection with the vacuum treatment processes during which plasma is , at least in part , inductively generated . [ 0054 ] fig7 is a schematic depiction of a preferred variant of an embodied example of the vacuum chamber according to the invention for the treatment of work pieces according to the invention . the same reference symbols are used here as were used for parts that have already been explained in connection with fig1 to 6 . the plasma in the discharge chamber r of the vacuum chamber 1 is generated inductively , by way of the induction coil , as well as capacitively , by way of the at least one pair of electrodes 7 a , 5 a . to generate plasma in capacitive manner it is possible , as shown schematically with the possibility of a select switch 19 , to use a dc generator 20 a , for example for reactive or non - reactive dc - sputtering — coating or etching — dc - magnetron sputtering . alternatively , an ac + dc generator 20 b or an hf generator 20 c can be connected , for example for reactive or non - reactive high frequency sputter - etching or sputter - coating . the screen 13 b , preferably consisting of metal , is connected with a reference potential , such as e . g . a ground potential . as further schematically shown in fig7 in another preferred embodied example the plasma density in chamber r is measured with a measuring apparatus 21 , and the measured result x is fed into a differentiator unit 23 as a measured actual value . this unit compares the current actual value with a desired value or desired value development w that is predetermined at a final control element unit 24 . as control difference a the comparison result is put via the control 25 to at least one regulating input st on the generator 2 that supplies the induction coil 9 as a final control element for the plasma density in the plasma density control circuit shown . preferably , the generator 2 operates , as outlined previously , in the medium frequency range , in particular between 100 and 800 khz , preferably in the 400 khz range . in the context of hf sputter - etching , for example , a voltage measuring device is envisioned as a measuring apparatus 21 that will measure the bias voltage on the substrates or on a substrate support , while , analogously to hf sputter - coating , the bias voltage is measured on the target side as actual value indication . if , as shown schematically in fig7 with perforated lines at item 13 c , the screen 13 b , c separates the discharge chamber r from an outer chamber 27 , it is easily possible to use the screen 13 b , c at the same time as a distribution jet , in particular as a distribution jet for the working gas . the gas g is then allowed to enter the referred to outer chamber . in particular , if a reactive , plasma - supported process is carried out in the vacuum chamber 1 according to the invention , it is possible to further slow down a interference layer build - up on the screen , in particular in the slot area , if an inert working gas , such as argon , is blown through the screen slots 17 . a reactive gas such as e . g . oxygen or another separating gas , is then preferably guided to the proximity of the substrate , e . g . via a ring line . in a chamber according to the invention equipped with a screen 13 b as shown in fig7 that was operated as an hf sputter - chamber and at different working pressures inside the discharge chamber r during several ten hours of continuous operation , performing sputtering of metals , the realized reduction of the injected inductive power was , depending on pressure , at the most at 10 %. using the control circuit outlined in connection with fig7 the process operating point was additionally stabilized by tracking the inductive generator capacity . using the method according to the invention , preferably as shown in fig7 it is possible to sputter dc - diodes , i . e . by using two ( di -) electrodes 5 a , 7 a in dc - operation and without a magnetic field . high rates result with the combination of inductive / capacitive plasma generation while avoiding interfering magnetic stray fields , accompanied by excellent target utilization . foregoing disclosure has been set forth merely to illustrate the invention and is not intended to be limiting . since modifications of the disclosed embodiments incorporating the spirit and substance of the invention may occur to persons skilled in the art , the invention should be construed to include everything within the scope of the appended claims and equivalents thereof .