hereinafter , embodiments of the present invention will be described in detail with reference to accompanying drawings . fig1 to 17 are schematic views showing a fabrication process of a back contact solar cell according to one embodiment of the present invention . hereinafter , the fabrication process of the back contact solar cell according to the present invention will be described with reference to fig1 to 17 . first , as shown in fig1 , a texturing structure is formed on at least one of a front surface and a rear surface of a p - type silicon substrate 310 . the texturing structure may usually be formed in a pyramid shape , etc , and performs a function of reflecting solar light incident to the solar cell so that maximum light may be absorbed into an inside of the solar cell , thereby raising efficiency of the solar cell . the texturing structure may he formed by etching using a known etching method . as an example , the texturing structure may be formed by immersing the silicon substrate 310 in a basic etching solution such as tetramethylammonium hydroxide ( tmha ), potassium hydroxide ( koh ), or sodium hydroxide ( naoh ), etc ., to which surfactant such as isopropyl alcohol ( ipa ), isopropyl ethanol ( ipe ), etc ., is added . after forming the texturing structure , thermal oxide layers 321 and 323 for surface passivation are formed on the front and rear surfaces of the silicon substrate 310 . the passivation layers 321 and 323 have a role of stabilizing and protecting the surface and minimizing surface recombination of electron - hole pairs to increase efficiency of the solar cell . these passivation layers 321 and 323 may be thermal oxide such as silicon oxide ( sio 2 ), etc ., formed by a rapid thermal oxidation ( rto ) scheme performed inside a furnace for rapid thermal processing ( rtp ), as described above . also , the passivation layers 321 and 323 may be formed by a sputtering method using the silicon oxide ( sio 2 ) as a target material . after forming the passivation layers 321 and 323 , a pattern for diffusing an n - type material is formed on the rear surface of the silicon substrate 310 , as shown in fig1 . the formation of the pattern is to partially remove the oxidation layer 323 already formed on the rear surface of the silicon substrate 310 , thereby making it possible to diffuse an n - type material through the removed portion . a process forming the pattern by partially removing the oxide layer 323 may be performed by irradiating laser light . as a light source of the irradiated laser light , various light sources may be used ; by way of example , a green laser source with a wavelength of about 532 nm , an nd / yag laser source with a wavelength of about 1064 nm , etc ., may be used . after partially removing the oxide layer 323 , an n - type material 330 is diffused into portions at which the oxide layer 323 is removed , as shown in fig1 . as a method diffusing the n - type material 33 , a thermal diffusion method , etc ., may be used . by way of example , a method performing doping by inserting the p - type silicon substrate 310 into a high - temperature furnace and flowing the n - type material ( for example , pocl 3 ) into an inside of the furnace may be used . after diffusing the n - type material 330 , the oxide layer 323 is removed in order to form a p - type semiconductor region in a region except for the region into which the n - type material is diffused , as shown in fig1 . at this time , a certain amount of the oxidation layer 323 is left in a region close to the region into which the n - type material 330 is diffused in order to insulate between the region into which the n - type material 330 is diffused and the p - type semiconductor region . at this the , the oxide layer 323 may also be removed by irradiating green laser light with the wavelength of about 532 nm , nd / yag laser light with the wavelength of about 1064 nm , etc . the oxide layer 323 left in order to isolate the region into which the n - type material is diffused and the p - type semiconductor region may perform a function of a rear passivation layer of the back contact solar cell . that is , the remaining oxide layer 323 protects the rear surface of the silicon substrate 310 as well as prevents rear surface recombination of electron hole pairs so as to be able to contribute to improvement in efficiency of the solar cell . after removing all oxide layer 323 except for a certain amount of the oxide layer 323 for isolating the region into which the n - type material 330 is diffused and the p - type semiconductor region among the oxide layer 323 formed on the rear surface of the silicon substrate 310 , the p - type semiconductor region 340 is formed by printing an aluminum ( al ) metal , etc . in a region except for the region into which the n - type material is diffused , as shown in fig1 . the printing of the aluminum ( al ) metal , etc ., for forming the p - type semiconductor region 340 may be performed by a screen printing method , etc ., which is a well - known printing method . in fabrication of the back contact solar cell of the present invention , since the removal of oxide layer 323 required for diffusing the n - type material 330 and the removal of the oxide layer 323 required for forming the p - type semiconductor region 340 are performed by irradiating the laser light , it is possible to omit a photolithography process requisitely used to remove the oxide layer on the rear surface of the conventional back contact solar cell . since the photolithography process , which is a complicated and expensive process , may be omitted , it is possible to simplify the fabrication process of the back contact solar cell and also reduce fabrication costs . after forming the p - type semiconductor region 340 , an anti - reflection coating 370 is formed on an upper surface of the oxide layer 321 formed on the front surface of the p - type silicon substrate 310 , as shown in fig1 . the anti - reflection coating 370 may be deposited using a deposition method such as a plasma enhanced chemical vapor deposition ( pecvd ) method , a sputtering method , or a spin coating method , etc ., and be made of a material such as silicon nitride ( sin x ) or titanium dioxide ( tio 2 ). etc . this anti - reflection coating 370 may have a function of minimizing reflectance of the solar cell and at the same time , perform a function of a passivation layer . accordingly , defects of the back contact solar cell are minimized and recombination of electron - hole pairs is further reduced , so that the efficiency of the solar cell may be improved . after forming the anti - reflection coating 370 , electrodes are primed on each of the regions into which the n - type material is diffused and the p - type semiconductor region 340 to form rear electrodes 390 , thereby completing the back contact solar cell , as shown in fig1 . as the electrode 390 , a metal with a high conductivity such as silver ( ag ), etc ., may be used . although the present invention has been illustrated with regard to specific details such as specific components , etc , limited embodiments , and drawings , the specific details such as specific components , etc , the limited embodiments , and the drawings are only provided in order to assist overall understanding of the present invention . the prevent invention is not limited to the above embodiment , but may be variously modified and altered by those skilled , in the art . therefore , a technical idea of the present invention is not limited to the above - mentioned embodiment and claims described below and equivalents thereof are within a scope of the technical idea of the present invention . according to the fabrication method of the back contact solar cell of the present invention , it is possible to simplify a fabrication process , reduce fabrication time , and reduce fabrication costs by using the laser method instead of photolithography in forming the pattern for formation of the p - type semiconductor region and the n - type semiconductor region . also , it is possible to obtain effects such as a rise in efficiency due to minimization of the shadowing effect , which is an original advantage of the back contact solar cell , a reduction in recombination of electron - hole pairs due to rear surface passivation , etc .