by changing the dimensions of the capacitor ( thickness ( d ) and area ( a ) dimensions ) the resonances can be shifted over a wide frequency range . this tuneability allows one to make a decoupling capacitor that has damping peaked at the harmonics of an integrated processor . the damping may be maximized by selecting ferroelectrics that have enhanced electromechanical coupling . such preferred materials include pervoskite type oxides having the formula abo 3 wherein b is at least one acid oxide containing a metal selected from the group consisting of ti , zr , hf , v , nb , ta , cr , mo , w , cu , and al , and a is at least one additional cation having a positive formal charge of from about 1 to about 3 . examples include pervoskite type oxides selected from : a titanate system material such as lead titanate , lead zirconate titanate , lead lanthanum zirconate titanate , barium titanate , barium strontium titanate , barium lanthanum titanate , a niobate or tantalate system material such as lead magnesium niobate , lithium niobate lithium tantalate , potassium niobate and potassium tantalum niobate , a tungsten - bronze system material such as barium strontium niobate , lead barium niobate , barium titanium niobate , and bi - layered pervoskite system material such as strontium bismuth tantalate , bismuth titanate and the like . materials such as lead zirconium titanates and lead lanthanum zirconium titanates , or other compositions that have large piezoelectric coefficients are preferred . the damping may be further enhanced by embedding the capacitors in a medium that has a high mechanical loss such as a polymer . the magnitude of the loss can also be tuned by changing the voltage of operation of the capacitor . at applied fields close to the cohercive field of the ferroelectric , damping is minimized . by increasing the voltage above or below the cohercive field , the amount of damping can be selectively increased . in order to obtain sufficient capacitance , the capacitor may comprise an array of tuned capacitors . an array of capacitors may be connected in parallel in which each capacitor in the array is tuned to a single frequency , and the number of capacitors in the array is chosen to give a specific capacitance . also by combining capacitors of different sizes in the same array , multiple loss peaks at different frequencies may be achieved . the metal oxide ferroelectric materials such as strontium bismuth tantalate , lead zirconate titanate , and bismuth titanate require processing temperatures greater than 500 ° c . in strongly oxidizing environments . for example , strontium bismuth tantalate typically requires anneals at 800 ° c . of 30 minutes or more . under such extreme processing conditions , the electrode stack of a typical device for the ferroelectric material exhibits severe instability and sub - layer interaction problems , oxidation of the underlying structures is probable , as is unwanted diffusion of dopants . in addition , metal oxide ferroelectrics are known to degrade during plasma processing and forming gas anneals . this degradation has been shown to be recovered by an oxygen recovery anneal . by forming a discrete chip capacitor , the problems listed above can be avoided or minimized . by using a discrete chip capacitor , the oxidation of underlying structures and unwanted diffusion problems in the integrated circuit are no longer applicable . in addition , subsequent plasma processing steps may no longer be necessary which may degrade the ferroelectric properties and a recovery anneal in oxygen may be feasible because it would not affect the integrated circuit . referring to fig1 a tuneable capacitor array structure according to the present invention is shown comprising a semiconductor substrate 10 , such as a silicon , upon which a first layer of conducting material 12 , such as a platinum , is deposited . a layer of ferroelectric material 14 , preferably having a large piezoelectric coefficient , such as a lead zirconium titanate , then is deposited on the first layer of conducting material 12 . the layer of ferroelectric material 12 is separated by dielectric barriers 16 , such as a second layer of conducting material 18 , such as platinum , is deposited on the layer of ferroelectrric material 14 to complete the capacitor stack . contact layer 20 is provided for interconnection . the following examples are provided to further describe the invention . the examples are intended to be illustrative and are not to be construed as limiting the scope of the invention . this example illustrates a 4 micrometer by 4 micrometer ferroelectric capacitor prepared on an oxidized silicon wafer . an oxide layer 400 nm thick was deposited on a silicon wafer . a blanket layer 250 nm thick of platinum was sputtered on the wafer and patterned by standard photolithiographic techniques to form a bottom electrode for the capacitor and a contact pad for electrical testing . a thin film consisting of strontium bismuth tantalate ( sbt )/ bismuth titanate ( bt ) ferroelectric layers was spun onto the wafer by chemical solution deposition technique . the film consisted of three layers sbt and one layer of bt and has a total thickness of 120 nm . a blanket film 100 nm thick of pt was deposited on top of the film and patterned to form the top capacitor electrode and electrical contact . measurements made using a radiant technologies ferroelectric test system confirmed that the film was ferroelectric . high frequency electrical testing was conducted using a hewlett packard 8720 vector network analyzer . contact to the capacitor was made using a cascade high frequency probe . parasitics were corrected for using open and shorted test structures . the real and imaginary parts of the capacitor were measured over the frequency range 1 - 20 ghz and are shown in graph a as a plot of capacitance and tan δ vs frequency . as shown in the graph , the capacitor has resonances at 3 . 76 ghz and 9 . 5 ghz producing sharp peaks in the loss of the capacitor . data from testing two capacitors prepared as described above but with two different dimensions ( 4 × 4 nm and 30 × 30 nm ) are shown in graph b . in these capacitors , resonances are seen at 3 . 1 ghz and 2 . 5 ghz . thus , it is illustrated that by changing the size of the capacitor the position of the loss peak can be tuned to a particular frequency . in this example the frequency of the resonance is controlled by lateral dimensions of the capacitor . the resonant frequencies of a given capacitor can be estimated by determining the fundamental and harmonic mechanical resonances of the capacitor structure . the resonant frequency of a free standing capacitor is given by where l is the lateral dimension of the capacitor p is the density of the ferroelectric and s 11 is the elastic compliance of the ferroelectric . mechanical clamping of the capacitor due to it being mounted on a substrate will shift the position of the resonance . standard methods of calculating these effects however are known . thus by choosing a capacitor of the right dimensions , the resonant frequency can be varied over a wide range from khz to ghz . either the thickness or the lateral dimension of the capacitor can be varied to tune the resonant frequency of the capacitor . by making an array of similar capacitors a device with the desired capacitance can be achieved . this example illustrates a capacitor prepared from a substrate on which a blanket conducting electrode is deposited made of a noble metal such as platinum , a ferroelectric layer is deposited on the electrode by a process such as chemical vapor deposition ( cvd ), physical vapor deposition ( pvd ), or chemical solution deposition ( csd ). ferroelectric materials with large piezoelectric coefficients such as lead zirconium titanate ( pzt ) are preferred . a second conducting electrode is deposited on the ferroelectric to form a capacitor stack . the stack is patterned into an array of capacitors by standard lithographic techniques . the lateral dimensions of the capacitors are chosen so that individual capacitors have resonances at the desired frequency / frequencies . the thickness of the ferroelectric and the number of the capacitors are chosen so as to provide the required capacitance per chip ( 1 nf typical ). for pzt , which has a dielectric constant of about 1000 at a film thickness of 200 nm , a total capacitor area of 22600 μm2 is required per chip . thus if 10 μm square capacitors are used a total of 226 capacitors should be included in the array . the resonant frequency of the capacitors depends on several materials parameters including the elastic properties of the ferroelectric and the surrounding materials and the piezoelectric coefficients of the ferroelectric which in turn depend on the microstructure of the film . square capacitors should give a few simple resonances . rectangular capacitors will have several more vibration modes . after etching the capacitors , a dielectric such as sio 2 or boron phosphorus silicate glass ( bpsg ) is deposited over the capacitors and polished back to the top electrode . a metal layer is then deposited to form common top contact for the capacitor array . the capacitor structure is attached to the chip or chip carrier and electrical contacts are made to the top and bottom capacitor contacts through processes such as wire bond or solder bump attachment . various other embodiments or other modifications of the disclosed embodiments will be apparent to those skilled in the art upon reference to this description , or may be made without departing from the spirit and scope of the invention defined in the appended claims . for example , it also is envisioned that capacitor structures pursuant to the present invention could be directly integrated onto a chip by suitable processing .