bonding device 100 and a manufacturing method of a semiconductor device related to the present invention are explained using fig1 from fig1 . fig1 is a side view of bonding device 100 concerning this embodiment , and fig2 is a front view of bonding device 100 . bonding device ( manufacturing apparatus of a semiconductor device ) 100 related to the present invention as shown in these fig1 and fig2 has bonding stage 17 where substrate w is arranged , movable member 27 formed in bonding head 50 via linear guide 7 , bonding mechanism 60 formed in this movable member 27 , force means 14 , actuator 8 for a drive ( first actuator ), and control unit 70 which controls each operation . bonding stage 17 comprises rigid high materials , such as ceramics and stainless steel . via linear guide 7 , movable member 27 is formed in bonding head 50 , and is displaced by actuator 8 for a drive , and the advance or retreat of it is enabled towards bonding stage 17 . actuator 8 for a drive comprised a servo motor and a ball screw , changed the torque of the motor into the thrust with the ball screw , and has generated the thrust which slides movable member 27 . it is good also as an air cylinder instead of actuator 8 for a drive , for example . bonding mechanism 60 is formed in the bonding stage 17 side among movable members 27 . from bonding mechanism 60 , force means 14 is the upper part and is formed in movable member 27 . bonding mechanism 60 has chip adsorption means 1 which can adsorb chip s , support member 26 formed in this chip adsorption means 1 , housing ( case ) 4 fixed to movable member 27 , flat spring ( elastic member ) 3 formed in this housing 4 , and load cell 6 for contact detection fixed to movable member 27 . the under surface which faces with bonding stage 17 among the front surfaces of chip adsorption means 1 is made into the bonding surface where chip s adsorbs . heating means 25 , such as a heater , are formed above this bonding surface . vacuum adsorption of chip adsorption means 1 is made possible by suction of air in chip s , and suction opening 1 a is formed in the bonding surface . support member 26 is being fixed to the upper surface of this chip adsorption means 1 , and at least a part of this support member 26 is located in housing 4 . through hole 4 a in which support member 26 arranged inside is inserted is formed in the upper and lower sides of housing 4 . support member 26 is supported with flat spring 3 within housing 4 . flat spring 3 is formed in point symmetry centering on the central point ( center - of - gravity point ) of flat spring 3 . this flat spring 3 is being fixed to housing 4 centering on the central point in the position of point symmetry . fig3 is a plan view showing an example of flat spring 3 , and as shown in this fig3 , it is formed in flat discoid . through hole 3 a in which support member 26 shown in fig1 is inserted is formed in the central part comprising the central point of flat spring 3 . a plurality of slits 3 b which are formed focusing on this through hole 3 a , and are extended and existed to a hoop direction are formed . slit 3 b is also arranged centering on the central point at point symmetry . flat spring 3 formed in this way is arranged in housing 4 so that it may become parallel to the front surface of bonding stage 17 . when support member 26 which is shown in fig1 and by which chip adsorption means 1 were formed successively is supported using such a flat spring 3 , chip adsorption means 1 will be supported so that it can move towards bonding stage 17 . since a plurality of slits 3 b are formed especially , the deformation of flat spring 3 becomes large . even if the stress applied to chip adsorption means 1 is minute , support member 26 and chip adsorption means 1 which are supported with flat spring 3 are displaced sensitively . hereby when the bump of chip s which chip adsorption means 1 adsorbed , and the bump of substrate w arranged on bonding stage 17 contact , support member 26 and chip adsorption means 1 can be relatively displaced good to housing 4 . as shown in fig1 , a plurality of flat springs 3 are formed in housing 4 . each flat spring 3 of each other is spaced out in the advance - or - retreat direction of movable member 27 . through hole 3 a of each flat spring 3 shown in fig3 is arranged on the vertical axis to the front surface of substrate w shown in fig1 . the axis line of support member 26 is arranged so that it may become vertical to substrate w . it arranges so that the front surface of chip s which the under surface of chip adsorption means 1 adsorbs , and the front surface of substrate w may become parallel mutually by this . it can suppress that support member 26 inclines to the advance - or - retreat direction ( it is a vertical direction to the front surface of substrate w ) of support member 26 by separating a gap in the advance - or - retreat direction of support member 26 , and supporting support member 26 with flat spring 3 . hereby , it can suppress that chip s with which chip adsorption means 1 connected to support member 26 was equipped inclines to substrate w . chip s can be made to be able to approach towards substrate w , maintaining the state where the upper surface of substrate w and the under surface of chip s were made parallel . fig4 is a plan view showing other examples of flat spring 3 , and as shown in this fig4 , it may form flat spring 3 disc - like . fig5 is a plan view showing the example of further others of flat spring 3 , and as shown in this fig5 , it is good also as a square shape . namely , flat spring 3 should just be made into point symmetry form making the central point the center . form , such as polygonal shape , circular form , and elliptical , is employable . support member 26 is provided with containing section 26 a which has an opening on the side surface at the side of movable member 27 of support member 26 and which consists of a recess or a through hole in fig1 . load cell 6 for contact detection fixed to movable member 27 is stored by this containing section 26 a . load cell 6 for contact detection is being fixed to the other end side of holddown member 6 a by which one end was fixed to movable member 27 . this load cell 6 for contact detection is made measurable in the contact force generated between support members 26 , and it is arranged so that support member 26 can be supported from the bonding stage 17 side . the width of the direction where support member 26 moves of containing section 26 a is formed more greatly than the width of load cell 6 for contact detection . for this reason , when external force is applied to chip adsorption means 1 , flat spring 3 will do elastic deformation and will do relative displacement of the support member 26 to movable member 27 . since load cell 6 for contact detection is being fixed to movable member 27 within containing section 26 a at this time , it is relatively displaced to support member 26 . force means 14 is provided with actuator 12 for press which pushes and presses the top end of support member 26 , and load cell 13 for thrust detection which is formed in the bottom end of actuator 12 for press , and measures the thrust applied to support member 26 . actuator 12 for press is formed in the same as the above - mentioned actuator 8 for a drive , and not only the structure of a servo motor and a ball screw but a linear motor is sufficient as actuator 12 for press . control unit 70 is provided with memory means 10 by which each parameter was stored , and control means 9 which controls the drive of actuator 12 for press , actuator 8 for a drive , etc . how to do bonding of a chip and the substrate and to manufacture a semiconductor device is explained using bonding device 100 formed as mentioned above . fig6 is a partially sectional side view showing the first step of the manufacturing process of the semiconductor device concerning this embodiment . fig1 shows the flows of control when connecting the bump of chip s , and the bump of substrate w . as shown in fig6 , chip adsorption means 1 adsorbs chip s first . and chip s is transported on bonding stage 17 . according to the alignment mechanism which is not illustrated , horizontal alignment of chip s and substrate w is done , and the bump of substrate w and the bump of chip s are made to correspond in an up - and - down direction . on this occasion , load cell 6 for contact detection touches the internal surface of containing section 26 a . load cell 6 for contact detection is pushing and pressing support member 26 towards the upper part from the bonding stage 17 side . that is , support member 26 and chip adsorption means 1 are supported by flat spring 3 and load cell 6 for contact detection . the weight of support member 26 and chip adsorption means 1 balances with the thrust from load cell 6 for contact detection , and the thrust from flat spring 3 . thus , the mechanism which supports support member 26 and chip adsorption means 1 is a thing like linear guide 7 which does not include the mechanism in which friction generates . and after the balance of the force of support member 26 , flat spring 3 , and load cell 6 for contact detection has balanced as mentioned above , when slight external force is applied to chip adsorption means 1 from the outside , the contact force between load cell 6 for contact detection and support member 26 will be changed . especially the rigidity of load cell 6 for contact detection and support member 26 is larger than flat spring 3 , and the elastic deformation of load cell 6 for contact detection and support member 26 is small . therefore , load cell 6 for contact detection can detect change of the external force applied to support member 26 with high precision . fig7 is a partially sectional side view showing the second step of the manufacturing method of the semiconductor device concerning this embodiment . as shown in this fig7 , after the stress state of support member 26 , flat spring 3 , and load cell 6 for contact detection has balanced , control means 9 drives actuator 8 for a drive , and descends movable member 27 towards bonding stage 17 . the alignment of substrate w and chip s is completed and let the position of movable member 27 just before movable member 27 is displaced below be a reference point of movable member 27 . and when the bump of chip s and the bump of substrate w contact , chip adsorption means 1 will be supported by the bump of substrate w . it changes so that the stress generated between load cell 6 for contact detection and support member 26 may become small . as mentioned above , since load cell 6 for contact detection can detect stress change with sufficient accuracy , it can judge that the bump of substrate w and the bump of chip s contacted . concretely , in fig1 , control means 9 descends movable member 27 until measurement value φ which is detected by load cell 6 for contact detection , and which is generated between load cell 6 for contact detection and support member 26 reaches set value ψ stored in memory means 10 shown in fig1 . and it memorizes for memory means 10 by making the position of movable member 27 into a point of contact when measurement value φ turns into set value ψ . fig1 is a cross - sectional view of the bump 19 and 20 neighborhood when bump 19 of chip s and bump 20 of substrate w contact . in this fig1 , bumps 19 and 20 are formed from hemispherical solder . and the front surface of substrate w and the front surface of chip s are spaced out distance l 1 . fig8 is a partially sectional side view showing the third step of the manufacturing process of the semiconductor device concerning this embodiment . in this fig8 and fig1 , with control signal a from control means 9 , actuator 8 for a drive is made to drive further , and movable member 27 descends only prescribed distance α towards bonding stage 17 . thus , when movable member 27 is displaced towards a lower part in the state where the bump of substrate w and the bump of chip s are in contact , while load cell 6 for contact detection fixed to movable member 27 will also be displaced below , chip adsorption means 1 and support member 26 are maintained in the above - mentioned contact position . for this reason , load cell 6 for contact detection which was in contact with the internal surface of containing section 26 a of support member 26 spaces out only prescribed distance α from the internal surface of containing section 26 a . since housing 4 is relatively displaced below to support member 26 and chip adsorption means 1 , to support member 26 , flat spring 3 deforms so that it may push and press towards bonding stage 17 , and pushes and presses chip s towards substrate w slightly . fig9 is a partially sectional side view showing the fourth step of the manufacturing process of the semiconductor device concerning this embodiment . in this fig9 and fig1 , force means 14 is driven with control signal b from control means 9 . hereby , actuator 12 for press drives and load cell 13 for thrust detection descends towards bonding stage 17 . and load cell 13 for thrust detection pushes and presses the upper end surface of support member 26 , and makes bump 19 and bump 20 push and press . and control means 9 controls the actuator for press so that measured value v which load cell 13 for thrust detection detects may turn into set value ω stored in memory means 10 and suppresses that excessive stress occurs between bumps 19 and 20 . thus , after pushing and pressing bump 19 and bump 20 , heating means 25 drives with control signal c from control means 9 . in fig9 , the heat from heating means 25 heat - conducts the inside of chip adsorption means 1 , and is conducted to chip s from a bonding surface , and bumps 19 and 20 of chip s are heated . as for heating means 25 , temperature is controlled by control signal c from control means 9 , and the generation of too much heat is suppressed . fig1 is a cross - sectional view when bump 20 of substrate w and bump 19 of chip s melting and unifying , and being set as bump 30 . as shown in this fig1 and fig1 , by heating means 25 , bump 20 and bump 19 are heated and melt . since support member 26 is pushed and pressed towards bonding stage 17 in fig9 when bump 20 and bump 19 melt and they become liquid , support member 26 and chip adsorption means 1 are displaced towards bonding stage 17 . and chip adsorption means 1 and support member 26 are displaced to the bonding stage 17 side , and chip s is pushed in only prescribed distance α towards substrate w . then , the internal surface of containing section 26 a and the load cell for contact detection contact , the displacement to the lower part of support member 26 is specified , and lowering of chip adsorption means 1 stops . that is , after bumps 19 and 20 melt , load cell 6 for contact detection is functioning as a stopper which specifies the displacement in which chip adsorption means 1 is displaced towards bonding stage 17 . thus , when chip adsorption means 1 is displaced towards bonding stage 17 after bumps 19 and 20 have melted , bump 19 and bump 20 becomes bump 30 of one , and chip s is connected with substrate w . since the stress generated between bumps 19 and 20 will decrease when bump 20 of substrate w and bump 19 of chip s melt , the contact force generated between support member 26 and load cell 6 for contact detection increases . when load cell 6 for contact force detection detects change of this contact force , it is detectable that bumps 19 and 20 dissolved . thus , when the measured value of load cell 6 for contact force detection is changed , control means 9 can stop the drive of actuator 12 for press , and can suppress too much pressurization . thus , it can suppress that bump 30 formed is crushed too much and adjacent bumps connect , without the falling position of chip s overshooting , since chip adsorption means 1 can be stopped in mechanical . hereby , good bonding can be performed . though insulating films , such as an oxide film , were formed in bumps &# 39 ; 19 and 20 front surface since it was made to dissolve after pushing bumps 19 and 20 , it can destroy , when pushing bumps 19 and 20 , and good electric connection can be performed . moreover , the distance of chip s and substrate w can be correctly set as predetermined distance l 2 , and it can suppress that variation occurs in each semiconductor device manufactured . force means 14 may consist of air cylinders . in that case , in fig1 , an air cylinder is sufficient as actuator 12 for press ( welding pressure generating means ). pressurization control means 11 which controls the thrust of actuator 12 for press by control signal b from control means 9 should just be a precision generator regulator . load cell 13 for thrust detection in particular shown in fig1 does not have the need . fig1 is a partially sectional side view showing the modification of bonding device 100 concerning this embodiment . as shown in this fig1 , force means 14 does not need to adhere to bonding head 50 , and as shown in fig1 , it may be supported by a different structured division from bonding head 50 . the embodiment of the invention was explained as mentioned above . however , with all the points , the embodiment disclosed this time is exemplification and should be considered not to be restrictive . the range of the present invention is shown by the claim . it is meant that a claim , and all the change in a meaning and within the limits equivalent to the claim are included . the present invention relates to the manufacturing apparatus of a semiconductor device and the manufacturing method of a semiconductor device , and it is especially suitable to the manufacturing apparatus of a semiconductor device and the manufacturing method of a semiconductor device which manufacture a semiconductor device by joining the bump of a chip , and the bump of a substrate .