the following discussion describes in detail one embodiment of the invention ( and several variations of that embodiment ). this discussion should not be construed , however , as limiting the invention to those particular embodiments , practitioners skilled in the art will recognize numerous other embodiments as well . for definition of the complete scope of the invention , the reader is directed to appended claims . fig1 is an illustrative view of the present invention in use . the present invention is a template for polishing silicon carbide , sapphire , germanium , silicon and pattern wafers 10 for manufacture in the electronics industry . stemming from the templates center is a slurry input 12 that introduce s water , fluid or slurry ( hereinafter referred to as slurry ) to a plurality of channels 14 formed on the top template surface 20 and directional guides 28 to deliver said slurry through a plurality of slurry passages 30 notched into the walls of said wafer pockets 18 and evenly distribute and disperse said slurry upon wafers 16 disposed therein . there are apertures disposed within the channels 14 forming slurry outlets 22 to prevent slurry overflow . additionally shown is the template loaded with four wafers 16 with a fifth being inserted into its designated placement . the slurry moves via centripetal force to vacuum ports 24 for evacuation . fig2 is an illustrative view of the present invention . the present invention is a template for polishing silicon carbide , sapphire , germanium , silicon and pattern wafers 10 for manufacture in the electronics industry . the slurry enters the template through a centrally disposed inlet 12 into channels 14 with slurry outlets 22 to prevent overflow and the slurry enters the wafer pockets 18 to evenly distribute and disperse a polishing fluid upon its held wafers . the remaining slurry is then evacuated via centripetal force through vacuum ports 24 . fig3 is an illustrative view of the present invention . shown is the template for polishing silicon carbide , sapphire , germanium , silicon and pattern wafers 10 having a housing 26 an inlet 12 in its center for receiving fluid therethrough with a plurality of outlets 22 that will allow excess fluid to centripetally drain through , along with a plurality of vacuum ports 24 for draining any remaining fluid out its periphery . fig4 is an illustrative view of the present invention . the present invention is a template for polishing silicon carbide , sapphire , germanium , silicon and pattern wafers 10 for manufacture in the electronics industry . stemming from the slurry inlet 12 templates center and out to it &# 39 ; s periphery are a plurality of channels 14 to direct the slurry to the overflow slurry outlets 22 and wafer pockets 18 and eventually to the vacuum ports 24 . fig5 is a sectional perspective view of the template for polishing silicon carbide , sapphire , germanium , silicon and pattern wafers 10 of the present invention . shown is the fluid course 32 being used with the present invention , fluid is taken into the slurry inlet 12 , can bleed out of the outlets 22 due to centripetal force and is then removed via a vacuum port 24 . fig6 is a top view of the present invention . the present invention is a template for polishing silicon carbide , sapphire , germanium , silicon and pattern wafers 10 . shown is the relationship between the slurry inlet 12 , channels 14 , slurry outlets 22 , wafer pockets 18 ant vacuum ports 24 . fig7 is a top view of the template for polishing silicon carbide , sapphire , germanium , silicon and pattern wafers 10 of the present invention . shown is the coarse the slurry 34 takes while being used with the present invention , slurry 34 is taken in by the inlet 12 , can bleed out of the outlets 22 due to centripetal force and is then removed via vacuum ports 24 . fig8 is a top view of the template for polishing silicon carbide , sapphire , germanium , silicon and pattern wafers 10 of the present invention . shown is the course of the slurry 34 takes while being used with the present invention . slurry 34 is taken in by the inlet 12 , can bleed out of the outlets 22 due to centripetal force , enters the wafer pockets 18 to coat and polish the wafers 16 therein and is then removed via the vacuum ports 24 . fig9 is a top view of the template for polishing silicon carbide , sapphire , germanium , silicon and pattern wafers 10 of the present invention . shown is the course the slurry 34 takes while being used with the present invention , slurry 34 is taken in by the inlet 12 , can bleed out of the outlets 22 due to centripetal force , enters the wafer pockets 18 to coat and polish the wafers 16 therein and is then removed via the vacuum ports 24 . it will be understood that each of the elements described above , or two or more together may also find a useful application in other types of methods differing from the type described above . while certain novel features of this invention have been shown and described and are pointed out in the annexed claims , it is not intended to be limited to the details above , since it will be understood that various omissions , modifications , substitutions and changes in the forms and details of the device illustrated and in its operation can be made by those skilled in the art without departing in any way from the spirit of the present invention . without further analysis , the foregoing will so fully reveal the gist of the present invention that others can , by applying current knowledge , readily adapt it for various applications without omitting features that , from the standpoint of prior art , fairly constitute essential characteristics of the generic or specific aspects of this invention .