fig3 is a simplified isometric view of an embodiment of the generic memory cell 30 of fig2 in accordance with an embodiment of the present invention . a substrate 40 has a contact stud 42 formed on it . in one embodiment , the substrate 40 is formed from n +- type semiconductor material such as silicon . in another embodiment , the substrate 40 is formed from p +- type semiconductor material . in either case , the contact stud 42 forms a low resistance contact to the substrate 40 , which acts as a power supply return electrode . a dielectric 44 is also formed on the substrate 40 and electrically isolates the substrate 40 from power supply busses 46 and from memory cells 48 . each of the memory cells 48 includes a storage device 50 and an access element 52 formed on the storage device 50 . a word line 54 is capacitively coupled to the access elements 52 through a dielectric 56 surrounding the word line 54 . the dielectric 56 also electrically isolates the word line 54 from the power supply busses 46 . fig4 is a simplified schematic diagram for the memory cells 48 of fig3 in accordance with an embodiment of the present invention . many of the elements described in conjunction with the schematic diagram of fig4 are identical to elements described in conjunction with in the embodiment illustrated in fig3 . therefore , in the interest of brevity , these elements have been provided with the same reference numerals , and an explanation of them will not be repeated . data is coupled between the memory devices 50 and a selected bit line 58 by a signal coupled through one of the word lines 54 that turns a selected group of the access elements 52 on . in one embodiment , the access elements 52 are vertical pmos fets having gates formed by the word line 54 and the storage devices 50 are bipolar transistors formed in sources of the pmos fets forming the access elements 52 . fig5 is a simplified cross - sectional view of a semiconductor substrate 40 that can be processed to form the memory cells 48 of fig3 and 4 , in accordance with an embodiment of the present invention . axes labeled “ x ” and “ z ” are also shown in fig5 to clarify relationships between the various figures . in one embodiment , an epitaxial layer 60 is grown on the substrate 40 . in one embodiment , the epitaxial layer 60 is a p - type epitaxial layer having a thickness of about 0 . 4 micron and an acceptor concentration n a of about 10 17 per cubic centimeter . an epitaxial layer 62 is grown on the epitaxial layer 60 . in one embodiment , the epitaxial layer 62 is a n - type epitaxial layer having a thickness of about 0 . 2 micron and a donor concentration n d of about 10 17 per cubic centimeter . an epitaxial layer 64 is grown on the epitaxial layer 62 . in one embodiment , the epitaxial layer 64 is a p +- type epitaxial layer having a thickness of about 0 . 2 micron and an acceptor concentration n a of about 10 20 per cubic centimeter . a mask layer 66 is formed on the epitaxial layer 64 . in one embodiment , the mask layer 66 is formed by conventional chemical vapor deposition (“ cvd ”) of a silicon dioxide layer 10 nanometers thick followed by conventional cvd of a silicon nitride layer 100 nanometers thick . conventional photolithography and etching are then used to define stripes in the masking layer 66 . the stripes in the masking layer 66 have a width oriented in the “ x ” direction corresponding to the minimum photolithographic feature size f and a length that corresponds to a “ y ” direction , i . e ., perpendicular to the sheet on which fig5 is printed . the stripes in the mask layer 66 are then used as etch masks for an anisotropic etch to define trenches 68 extending through the epitaxial layers 64 and 62 and into the epitaxial layer 60 , resulting in the structure shown in fig5 . the trenches 68 separate bars 70 of silicon material . in one embodiment , the trenches 68 are etched to a depth of 0 . 7 micrometers . fig6 is a simplified cross - sectional view of the substrate 40 of fig5 at a later point in processing , in accordance with an embodiment of the present invention . following etching of the trenches 68 , a thin protective layer 72 is formed over all exposed surfaces of the mask layer 66 , sides of the bars 70 and bottoms of the trenches 68 . in one embodiment , the thin protective layer 72 is formed by conventional cvd of silicon nitride to a thickness of 20 nanometers . a conventional timed anisotropic etch is then used to selectively remove the thin protective layer 72 from the bottoms of the trenches 68 and the tops of the bars 70 . a conventional timed isotropic etch is then used to undercut the bars 70 . the bars 70 of silicon are supported at their ends by portions that are not undercut ( not illustrated ). in one embodiment , the bars 70 are completely undercut . in another embodiment , the bars 70 are largely undercut . in either case , a conventional thermal oxidation is carried out to form a silicon dioxide layer 74 that supports the bars 70 and that electrically isolates the bars 70 from the substrate 40 , resulting in the structure illustrated in fig6 . fig7 is a simplified cross - sectional view of the substrate 40 of fig6 at a later point in processing , in accordance with an embodiment of the present invention . conventional photolithography masks the bars 70 and alternate trenches 68 . conventional anisotropic etching removes the silicon dioxide layer 74 from the bottom of every other trench 68 to expose the substrate 40 , although only two trenches 68 are shown in fig7 . conventional timed isotropic etching strips the thin protective layer 72 from sidewalls of the trenches 68 and bars 70 . conventional cvd fills the trenches 68 with n +- type polycrystalline silicon 75 , and conventional chemical - mechanical polishing planarizes the n +- type polycrystalline silicon 75 , stopping on the mask layer 66 . conventional timed reactive ion etching recesses a top surface of the n +- type polycrystalline silicon 75 to below a top of the epitaxial layer 60 and above a bottom of the epitaxial layer 60 . the substrate 40 is heated to diffuse a portion of the n +- type donor atoms from the n +- type polycrystalline silicon 75 into the epitaxial layer 60 to form regions 76 and 77 , resulting in the structure illustrated in fig7 . the regions 76 correspond to first current - carrying electrodes or emitters of the storage devices 50 of fig3 and 4 , and the regions 77 correspond to second current - carrying electrodes or collectors of the storage devices 50 . fig8 is a simplified isometric cross - sectional view of the substrate 40 of fig7 at a later point in processing , in accordance with an embodiment of the present invention . the structure shown in fig8 is rotated relative to the structures illustrated in fig5 through 7 as indicated by “ x ,” “ y ” and “ z ” axes shown in fig8 . another thin protective layer 78 is formed on the sides of the bars 70 , the recessed surface of the n +- type polycrystalline silicon 75 and the mask layer 66 . in one embodiment , the thin protective layer 78 is formed from silicon nitride having a thickness of 20 nanometers . conventional cvd fills the trenches 68 and covers the bars 70 with a dielectric 80 . in one embodiment , the dielectric 80 is formed from silicon dioxide formed by conventional teos that fills the trenches 68 and covers the bars 70 . in one embodiment , conventional chemical - mechanical polishing planarizes the dielectric 80 , removing the dielectric 80 from tops of the bars 70 and stopping on the mask layer 66 . another mask layer 82 is formed on the dielectric 80 and the mask layer 66 . in one embodiment , the mask layer 82 is a silicon nitride layer formed by conventional cvd to have a thickness of 100 nanometers . conventional photolithography defines stripes of resist ( not illustrated ) at an angle to the stripes of fig5 through 7 . in one embodiment , the mask layers 82 and 66 are etched to define stripes in the mask layer 82 having the minimum photolithographic feature size f along the “ y ” direction , i . e ., forming stripes at right angles to those of fig5 . conventional anisotropic etching removes exposed portions the dielectric layer 80 from between the stripes of the mask layer 82 , stopping on the thin protective layer 78 . a conventional selective anisotropic etch is used to etch exposed portions of the bars 70 , which are formed from single crystal silicon , stopping at the silicon dioxide layer 74 and at exposed portions of the n +- type polycrystalline silicon 75 . exposed portions of the thin protective layer 78 are removed using conventional etching to provide trenches 84 in the structure shown in fig8 . fig9 is a simplified cross - sectional view of the substrate 40 of fig8 at a later point in processing , in accordance with an embodiment of the present invention . the dielectric 56 of fig3 is formed on exposed portions of the n +- type polycrystalline silicon 75 ( not shown in fig9 ) and on exposed portions of the silicon dioxide layer 74 . in one embodiment , the dielectric 56 is formed as a conventional cvd oxide that fills the trenches 84 and covers the mask layer 82 . conventional chemical - mechanical polishing may be used to planarize the dielectric 56 and to remove the dielectric 56 from the mask layer 82 . a conventional timed etch may be used to recess a top surface of the dielectric 56 to a level below a junction between the epitaxial layers 60 and 62 without exposing tops of the n +- type polycrystalline silicon 75 . a conventional thermal oxide 86 may be grown on exposed sides of the epitaxial layers 60 , 62 and 64 . in one embodiment , the oxide 86 is grown to a thickness of 10 nanometers . p +- type polycrystalline silicon 88 is formed in the trenches 84 and on the mask layer 82 using conventional cvd . in one embodiment , the p +- type polycrystalline silicon 88 is formed to have a thickness of about ⅓ of the minimum photolithographic feature dimension f . a conventional anisotropic etch removes portions of the p +- type polycrystalline silicon 88 from bottoms of the trenches 84 and from tops of the mask layer 82 , leaving p +- type polycrystalline silicon 88 on the thermal oxide 86 and providing the structure shown in fig9 . fig1 is a simplified cross - sectional view of the substrate 40 of fig9 at a later point in processing , in accordance with an embodiment of the present invention . a dielectric 90 is deposited using conventional cvd to fill in spaces between portions of the p +- type polycrystalline silicon 88 . the dielectric 90 is removed from the mask layer 82 and is planarized using conventional chemical - mechanical polishing . photoresist 92 is conventionally applied and patterned to expose a top surface of the p +- type polycrystalline silicon 88 on one side , but not the other , of each of the trenches 84 . a conventional isotropic etch then removes the p +- type polycrystalline silicon 88 from every other side of the trenches 84 to provide the structure shown in fig1 . the photoresist 92 and the mask layers 66 and 82 are conventionally stripped and conventional microfabrication is used to provide interconnections and other conventional structures . the p +- type polycrystalline silicon 88 forms gates of the access elements 52 of fig3 and 4 , and also forms the word lines 54 . the access elements 52 include a drain formed by the epitaxial layer 64 , a channel formed in the epitaxial layer 62 adjacent the p +- type polycrystalline silicon 88 and a source formed by the epitaxial layer 60 . the oxide 86 forms a gate insulator separating the p +- type polycrystalline silicon 88 from the epitaxial layer 62 . stacking the access element 52 on top of the storage device 50 to provide the memory cells 48 of fig3 and 4 and forming the p +- type polycrystalline silicon 88 and the n + type polycrystalline silicon 75 between memory cells 48 allows compact memory cells 48 having an area of four minimum photolithographic feature dimensions f squared to be formed . fig1 is a simplified block diagram of an sram 175 that can be formed using the memory cells 48 of fig3 and 4 , in accordance with an embodiment of the present invention . the sram 175 includes an address register 177 that receives either a row address or a column address on an address bus 179 . the address bus 179 is generally coupled to a memory controller ( not shown in fig1 ). typically , a row address is initially received by the address register 177 and is applied to a row address multiplexer 183 . the row address multiplexer 183 couples the row address to a number of components associated with either of two memory banks 195 , 197 depending upon the state of a bank address bit forming part of the row address . associated with each of the memory banks 195 , 197 is a respective row address latch 201 which stores the row address , and a row decoder 203 which applies various signals to its respective memory bank 195 or 197 as a function of the stored row address . the row address multiplexer 183 also couples row addresses to the row address latches 201 for the purpose of refreshing memory cells in the memory banks 195 , 197 . after the row address has been applied to the address register 177 and stored in one of the row address latches 201 , a column address is applied to the address register 177 . the address register 177 couples the column address to a column address latch 215 . the column address from the column address latch 215 is decoded by a column address decoder 217 to address a specific column or columns . the row address corresponds to one or more of the word lines 54 of fig3 and 4 , and the column address corresponds to one or more of the bit lines 58 . data to be read from one of the memory banks 195 , 197 is coupled to the column circuitry 225 , 227 for one of the memory banks 195 , 197 , respectively . the data is then coupled to a data output register 229 which applies the data to a data bus 231 . data to be written to one of the memory banks 195 , 197 is coupled from the data bus 231 through a data input register 233 to the column circuitry 225 , 227 and then is transferred to one of the memory banks 195 , 197 , respectively . fig1 is a simplified block diagram of a computer system 250 including one or more memories using the sram 175 fig1 , in accordance with an embodiment of the present invention . the computer system 250 includes a processor 252 for performing various computing functions , such as executing specific software to perform specific calculations or tasks . the processor 252 includes a processor bus 254 that normally includes an address bus , a control bus and a data bus . in addition , the computer system 250 includes one or more input devices 264 , such as a keyboard or a mouse , coupled to the processor 252 to allow an operator to interface with the computer system 250 . typically , the computer system 250 also includes one or more output devices 266 coupled to the processor 252 , such output devices typically being a printer or a video terminal . one or more data storage devices 268 are also typically coupled to the processor 252 to allow the processor 252 to store data or retrieve data from internal or external storage media ( not shown ). examples of typical storage devices 268 include hard and floppy disks , tape cassettes and compact disk read - only memories ( cd - roms ). the processor 252 is also typically coupled to cache memory 276 , which is usually sram and may be the sram 175 of fig1 , by the processor bus 254 , and to dram 278 through a memory controller 280 . the memory controller 280 normally includes a control and address bus 282 that is coupled to the dram 278 . when incorporated into the computer system 250 , the sram memory 175 of the present invention provides increased data density , high access speed and reduced power consumption . these advantages are particularly useful in the context of handheld or portable products . from the foregoing it will be appreciated that , although specific embodiments of the invention have been described herein for purposes of illustration , various modifications may be made without deviating from the spirit and scope of the invention . accordingly , the invention is not limited except as by the appended claims .