the embodiments of the present invention and their advantages are best understood by referring to fig1 through 6 of the drawings , like numerals being used for like and corresponding parts of the various drawings . fig1 presents a flowchart depicting the method for forming localized nucleation sites in a narrow silicon structure in accordance with one embodiment of the invention . in step 101 , at least one narrow silicon structure , such as a narrow polysilicon gate , a silicon moat , or a polyline , is formed . in step 102 , at least one nucleation region is formed adjacent to the at least one narrow silicon structure . steps 101 and 102 may be accomplished with the same semiconductor process . for example , steps 101 and 102 may comprise forming a first oxide layer ( not shown ) over a semiconductor body ( not shown ), depositing a polysilicon layer ( not shown ) over the first oxide layer , and selectively etching the polysilicon layer and the first oxide layer to form at least one narrow silicon structure and at least one nucleation region attached to said at least one silicon structure . the width of the at least one narrow silicon structure may be less than 0 . 25 μm . the at least one nucleation region may have about the same or greater width than the width of the at least one narrow silicon structure . typically , the width of the nucleation regions may be at least 0 . 25 μm . while larger nucleation regions may be preferred , the ability to use wide nucleation regions may be limited by layout design rules , effectively limiting the maximum width of the nucleation regions to the space that is available . the narrow silicon structures and the nucleation regions are formed of silicon . the number of nucleation regions that are attached to the narrow silicon structure may depend on the length of the narrow silicon structure . while one nucleation region will often work , a plurality of nucleation regions may be used . in one embodiment , if the narrow silicon structure has a length of greater than or equal to 20 μm , it may be desirable to add a second nucleation region in order to effect a quicker transformation from c49 to c54 phase tisi 2 over the length of the narrow silicon structure . however , the addition of a second nucleation region is not required . referring to fig2 a and 2b , hammerhead 206 and contact pad 208 , both nucleation regions , are attached to silicon gate 202 . hammerhead 206 and contact pad 208 are located on top of isolation region 210 and do not directly touch moat 204 . fig2 b , which is a view taken along the 2 b — 2 b cut of fig2 a , illustrates the positioning of hammerhead 206 and contact pad 208 . hammerhead 206 and contact pad 208 may be of the same dimension , or they may be of different dimensions . referring again to fig1 in step 104 , a mask is applied in order to cover moat 204 and silicon gate 202 , i . e ., the active area . applying a mask to a silicon structure is known in the art . standard lithography techniques using photoresists or other organic or inorganic masks , including sio 2 , may be used . the nucleation regions are not covered by the mask and thus remain exposed . in step 106 , the attached nucleation regions are treated in a fashion that enhances the formation of c54 nucleation sites . referring to fig3 a and 3b , mask 302 covers silicon gate 202 and moat 204 , while hammerhead 206 and contact pad 208 , both nucleation regions , are uncovered and exposed . referring to fig1 in step 106 , the semiconductor structure is treated to enhance formation of c54 nucleation sites during silicidation . this treatment may be accomplished by any method that will enhance the subsequent formation of c54 nucleation sites . in one embodiment , the treatment comprises a pai treatment using sb , in , as , b , c , si , ge , n , or ar , for example , at energies between 5 and 50 kev and doses of 5 × 10 12 to 5 × 10 15 ions / cm 2 . a typical pai may be effected at an energy of about 20 to 50 kev and at a dose of 3 × 10 14 to 3 × 10 15 . the pai treatment will produce a thin amorphous silicon nanometers in thickness , with a typical thickness being around 30 nanometers . in another embodiment , the treatment may introduce refractory metals into a surface of the nucleation regions using implantation , sputter deposition , chemical vapor deposition , or other techniques . refractory metals may include , without limitation , mo , ta , and w . implantation of refractory metals may be effected at an energy of about 20 to 60 kev and at a dose of 1 × 10 13 to 5 × 10 14 ions / cm 2 . step 106 treats the silicon that comprises the nucleation regions . as a result , when the nucleation regions are silicided at a subsequent step , the silicidation process is able to more effectively achieve a c49 to c54 phase transformation . referring to fig3 a and 3b , treatment 304 is applied to the entire structure . however , due to mask 302 protecting silicon gateway 202 , treatment is effectively applied only to hammerhead 206 and contact pad 208 . as a result of treatment 304 , hammerhead 206 and contact pad 208 have an enhanced ability to undergo a phase transformation from c49 phase tisi 2 to c54 phase tisi 2 during subsequent processing steps . at the time of treatment 304 , no titanium has yet been deposited , and so , it is only polysilicon that is being treated . because no titanium has yet been deposited , no transformation can occur , but rather the transformation is effected during subsequent processing stages , as will be discussed below . treatment 304 is used only to enhance the ability of the silicon to undergo the transformation from a high resistance state to a low resistance state during a subsequent processing stage once the silicon is reacted with titanium . masking the active areas during treatment 304 reduces or prevents the introduction of metallic impurities or other defects and damage into the sid regions that may lead to higher diode junction leakage in the device being formed . this is a significant technical advantage . again referring to fig1 in step 108 , the mask is removed using known techniques . in step 110 , a layer of titanium is deposited over the semiconductor structure . the layer is then subjected to a process to form a silicide , for example , through first annealing process 112 . when an annealing process is used , it is typically performed in a nitrogen ambient , so that the remaining non - silicided material is either unchanged or forms a metal nitride . in step 114 , the non - silicided metal is removed . for example , a wet etch may be used to selectively remove the non - silicided metal . in the case of ti , a solution of h 2 o 2 and h 2 o may be used to wet etch the unreacted ti and tin which is formed during the annealing process , thus , leaving a layer of c49 phase tisi 2 next , second anneal 116 is performed to initiate the transformation from c49 phase tisi 2 to c54 phase tisi 2 . for a successful transformation to occur , a sufficient number of c54 nucleation sites must be created in the tisi 2 . if an insufficient number of sites are present , then there will be incomplete transformation of the silicide for the given anneal conditions and the resulting layer of silicide will be a mixture of c54 and c49 phase tisi 2 and will not be at its lowest possible resistance . hence , pretreatment of the silicon with treatment 304 is desirable to increase the ability of the tisi 2 to form c54 nucleation sites . referring to fig4 a , 4 b , and 5 , the enhanced nucleation and subsequent transformation from c49 to c54 phase silicide is illustrated . in fig4 a and 4b , hammerhead 406 and contact pad 408 have both undergone an initial anneal and have a plurality of c54 nucleation sites . such a transformation may be initiated as previously discussed by an annealing process . the transformation begins in the nucleation regions , and , as a result , at this early stage , silicon gateway 202 has not been affected and remains c49 phase tisi 2 . as shown in fig5 however , once the nucleation regions have undergone the phase transformation to c54 phase , a phase transformation “ wavefront ” propagates into silicon gateway 202 from both hammerhead 406 and contact pad 408 . this is indicated by phase transformation wavefronts 502 a and 502 b which are shown traveling along silicon gateway 202 , resulting in silicon gateway 202 transforming to c54 phase tisi 2 . the process results in low - resistance tisi 2 in the narrow silicon structure without the deleterious effect of increased junction leakage in the s / d regions of the device . in another embodiment , more than one narrow silicon structure may be enhanced using the same nucleation regions . referring to fig6 a plurality of narrow silicon structures 602 are provided . at least one nucleation region 604 is attached to the plurality of narrow silicon structures 602 . the number of nucleation regions 604 attached may depend on factors including , inter alia , the length of the narrow silicon structure , available space , and the like . referring back to fig1 steps 104 , 106 and 108 are not always desirable . the steps permit the active area ( i . e ., moat 204 and silicon gate 202 ) to be masked during treatment of the nucleation regions to enhance formation of c54 nucleation sites during silicidation . if the nucleation regions are sufficiently large , the number of c54 nucleation sites in the nucleation regions may be sufficient without additional treatment . the c49 to c54 phase transformation will also be initiated in the nucleation regions and then propagate along the narrow silicon structure . the treatment associated with step 106 may certainly enhance the formation of c54 nucleation sites , but if the nucleation region has a width of at least 0 . 25 μm , which represents an approximate distance between two adjacent c54 nuclei , then treatment becomes merely preferable , and no longer necessary . again referring to fig1 step 116 may not always be desirable . the second anneal associated with step 116 may enhance the transformation from c49 to c54 , but where the treatment associated with step 106 is implantation of molybdenum , the transformation from c49 to c54 will often occur before the second anneal , and therefore , the second anneal may be unnecessary . in such a case , the nucleation sites formed during the first anneal , i . e ., treatment 304 , may convert completely to c54 phase tisi 2 . while the invention has been particularly shown and described by the foregoing detailed description , it will be understood by those skilled in the art that various other changes in form and detail may be made without departing from the spirit and scope of the invention .