this invention describes a process to fabricate locally thinned fins in the body region of the transistor . the advantage of a locally thinned fin is : higher mechanical stability of thin fins ( since most of the fin is thicker and stronger than the thin region ); formation of halos and extension by ion implant ; and because due to the thicker fin body outside the gate not all of the silicon is amorphized and amorphized silicon can therefore be recrystallized again . a feature of the invention is a gate spacer process that protects the gate while the sidewall of the fins is cleared from the gate spacer material ( e . g . nitride ) and from other materials . clearing the fin sidewall from unwanted spacer material is quite difficult as a long overetch of the gate spacer is required . this overetch that clears the sidewall of the fins also consumes the conformal gate spacer on top and on the upper sides of the gate , thereby exposing the polysilicon gate material . cleared fin sidewalls are necessary to increase the fin thickness outside of the gate to reduce series resistance . if polysilicon from the gate is exposed at the level of the fins , epitaxial growth will also occur on the gate in that area and can cause shorting of gate and source / drain during silicidation . referring now to fig1 , there is shown in cross section a portion of an integrated circuit that will contain a set of finfet transistors . wafer 10 may be bulk silicon or an soi wafer . the soi wafer is preferred and is illustrated here . above substrate 10 , buried oxide insulator ( box ) layer 20 has been formed by conventional processes . sitting on top of box 20 are blocks of silicon 30 extending perpendicular to the plane of the paper that will form the fins of finfets . the plane of the cross section in fig1 a is taken through the source / drain ( s / d ) area and in fig1 b through the location where transistor gates will be placed in later steps . fig1 c is a top view showing the location of cross sections 1 a and 1 b . the horizontal dimensions appearing in the cross section will be referred to as transverse dimensions ( and the horizontal dimension of blocks 30 is the thickness of the fins ). for convenience in explanation , the top of fig1 c will be referred to as north , with other directions corresponding . thus , fig1 a is a cross section taken at the north end of the fins , looking north . in the following figures , cross sections na will be at the same location as 1 a and cross sections nb will be at the same location as 1 b . in this example , a set of four fins shown will be controlled by a common gate . those skilled in the art will be aware that separated gates could be formed to control one or more fins , if desired . as used herein , the term set means one or more ; i . e . a finfet may have one or more fins . the figure shows the result of conventional preliminary steps , well known to those skilled in the art , of forming the silicon fins for a finfet . narrow fin structures in silicon or silicon on insulator ( soi ) can be fabricated in different ways , e . g . by optical lithography followed by different trimming techniques ( resist trimming , hard mask trimming , oxidation trimming ( these processes are based on width reduction of the mask by plasma etch or wet etch , or by material consumption of the fin by oxidation )), by e - beam lithography or by sidewall image transfer processes . in the example illustrated , the sidewall image transfer process was used as the method to structure narrow fins in soi . fig1 shows a bulk wafer 10 , having a buried oxide ( box ) 20 with an soi layer 30 of 70 nm ( possible range of the soi is ˜ 10 nm to 200 nm , but not limited to that range ). the surface of layer 30 has been oxidized to form 300 å of thermal oxide 32 ( preferred range 50 å - 500 å ). alternatively , an oxide can also be deposited using any kind of cvd processes . the following discussion illustrates a conventional method , well known to those skilled in the art , of fabricating the structure shown in fig1 . other methods may also be used . these initial steps are not illustrated in the figures to avoid unnecessary detail . initially , 1500 å ( preferred range 500 å - 3000 å ) of temporary amorphous silicon ( not shown ) were deposited on the wafer surface that will be formed into the fins ( oxide layer 32 on top of fin layer 30 ) by cvd or sputter processes , followed by the deposition of 500 å ( preferred range 100 å - 2000 å ) of cvd oxide ( not shown ) as a hardmask . optical lithography and rie etch processes are used to structure the cvd oxide hardmask and , using the cvd oxide hardmask , the amorphous silicon layer , stopping on the oxide layer 32 on top of the soi to form a temporary structure that supports the conformal layer that follows . then a 200 å ( preferred range 50 å - 500 å ) nitride layer ( not shown ) is deposited conformally using a cvd process followed by a rie etch process to form sin spacers ( sidewalls ) on the side of the amorphous silicon . the amorphous silicon is then removed with a plasma etch or wet etch leaving nitride spacer structures behind . the spacer structures are used as a hardmask to structure the oxide 32 underneath and can be removed afterwards by oxide and silicon selective plasma etches or wet etches ( e . g . hot phosphoric acid ). the structured oxide 32 is then used as a hardmask to etch the silicon fins 30 in the soi layer , resulting in the example shown in fig1 . next , a sacrificial oxide is thermally grown to remove rie damage from the silicon fin surface and to act as a screen oxide for fin body doping implants that can be processed at this point . fin body doping implants are not necessary to make the finfet device work , but can be useful to set finfet vt . the sacrificial oxide is removed by a wet etch , followed by a preclean and gate oxide processing using thermal oxidation or cvd deposition processes . a specific example of the process described above is shown in copending patent application attorney docket number yor920030433us1 , assigned to the assignee hereof and incorporated herein by reference and omitted from this description for simplicity . this invention describes a process to form controlled , locally thin body fins for a finfet device with thicker source / drain regions . the advantage of this process is that high aspect ratio fins can be processed with sufficient stability and lower extension resistance . the process is based on defining an etch window for locally thinning the silicon fin . thickness control of the fin body is one of the most critical factors in finfet processing as it directly results in fet threshold variation . fig2 a and 2b show the result of forming a sacrificial oxide 34 along the fin sidewalls . the oxide is either thermally grown or deposited to a thickness of 50 å ( preferred range 10 å - 200 å ). then a cvd nitride 40 is deposited conformally around the fins . the thickness is preferably chosen such that the space between the fins is filled by the nitride , the thickness range of the nitride can be 50 å to 1000 å . fig2 a and 2b show the same structure in the body area and the s / d area . fig3 a and 3b show the result of surrounding the fins with an oxide 50 that will define an aperture area when nitride 40 is removed in a later step . a cvd oxide 50 is deposited and planarized to the nitride level on top of the fins . cmp or etch back techniques can be used for oxide planarization fig3 a and 3b show that there is the same structure in both cross sections . fig4 a and 4b show the result of depositing a second cvd oxide on top of the planarized surface 42 of oxide 50 with a thickness of at least the height from box 20 to surface 42 . this height is necessary for processing the gate nitride spacer later in the process . oxide deposition in fig3 and 4 could be also done in one deposition process followed by a planarization step , with the disadvantage of not having a nitride layer 40 to stop on , so the total thickness control of the oxide might be worse . the result shows the same structure in the s / d area and in the gate area . fig5 b shows the area where the fin will be locally thinned . the area definition can be done by lithography ( optical or e - beam ), or sidewall image transfer techniques . with the appropriate mask ( e . g . resist ) in place to protect areas of the circuit outside the finfet gate region ( e . g . the s / d area ), the oxide 55 is etched first by rie down to the nitride 40 , then the nitride 40 is etched by rie down to the buried oxide 20 , selective to oxide 50 , leaving an aperture for the transistor body ( shown in top view in figure 6 c ). fig5 a shows that the s / d areas are unaffected by the aperture etching process . fig6 b shows the body region of fig5 b after the oxide 34 at the sidewalls of the fins has been removed by a wet etch ( hf ) and the local thinning process been applied to produce thinner fins 35 . the local thinning can be done by etching the silicon wet ( nh4oh chemistry ), dry ( isotropic plasma ) or by local oxidation and removing the oxide by wet or dry etch techniques . fig6 a shows the s / d area as unchanged . fig6 c shows a top view with a thinner body area 35 in aperture 53 . blocks 55 at the left and right of fig6 c show the portions of oxide 55 that were outside aperture 53 . as fig6 a shows , oxide 55 extends left - right across the area shown in the figures . in fig6 c , oxide 55 is shown as cut away in the central portion to show an unobstructed top view of the fins , denoted with numeral 32 , since the top view shows the oxide cap on the fins 30 . the fins are embedded in nitride 40 , as shown in fig6 a . at this point there are two general ways to continue finfet processing , one with a lithographically aligned gate , the other one with a selfaligned gate . the flow with lithographically aligned gate continues with the growth of sacrificial oxide and stripping the nitride in the wider area of the fin . this is then followed by standard finfet processing . the gate is lithographically defined over the thin fin region . the process flow with the preferred embodiment of the selfaligned gate is described in the following paragraphs . fig7 b shows the result of forming the finfet gate 60 . first , a gate oxide ( shown as the edge 36 of fins 35 ) is thermally grown on the sidewalls of the fins 35 with a thickness of 10 å ( preferred range 5 a ( or thinnest possible oxide ) to 100 å ( depending on fin thickness )). alternatively , a gate oxide can be deposited with a similar target range . then the gate conductor 60 ( polysilicon , amorphous silicon , metal ) is deposited within the damascene aperture 53 shown in fig6 c and planarized down to the level of oxide 55 , using cmp or etchback techniques . fig7 a is the same as fig6 a , showing that the activity in this step is confined to the aperture 53 . fig8 a shows the finfet structure in the s / d area after oxide etch ( rie ) of oxide 55 down to the level of nitride 40 and nitride etch ( rie ) of nitride 40 down to the buried oxide 20 in the region where the fins 30 are wider . the area of the etch is denoted with bracket 51 in fig8 a and 8c . both etch processes are selective to the gate conductor ( fin 30 ) material . the following process steps are optional and may be done after the s / d area is cleared in the preceding step : oxidation of the gate sidewalls ( target 35 a , preferred range 10 å b 100 å ), cvd oxide liner deposition ( target 50 å , preferred range 10 å - 500 å ). to set the right vt and to control the short channel effect halo and extension ion implants are processed . according to the invention , fins 30 in the s / d area will be made thicker than their initial value in order to decrease resistance of the device . as discussed above , it is necessary that the gate not short to the source or drain after the thickening process . the following steps produce an isolating dielectric layer on the lower portion of the gate 60 , located up to the height of the fins 30 . aa nitride liner denoted with line 62 in fig9 b is deposited over the gates and the fins ( target 400 å , preferred range 50 å - 1000 å ) and etched by rie to form nitride spacers along the gate conductor . since the nitride 62 etch is directional , a long nitride overetch is necessary to clear the sidewalls of the fins from the nitride , therefore the nitride etch has to be very selective to oxide . if the nitride etch were less directional , a transverse component of the etch would clear the fins faster , but not leave the required spacer on the gate 60 . thus , the spacer etch removes spacer 62 from the top of gate 60 and fins 30 and then continues to remove , from the top , the portion of the conformal layer that is adhering to the vertical surfaces of the fins and the gate . the height difference between the gate and the fins specified above comes into play at this time . the nitride is removed from the fins , so that it does not block the thickening process . during that period , the nitride will also be removed from the upper portion of gate 60 . the condition on the relative height of the gate 60 and the fins 30 is therefore that , when the fins are cleared , nitride 62 remains adhering to the north and south sides of gate 60 up to a height above the source and drain materials . the result shown in fig9 a is that there is an opening in the s / d area where the nitride liner has been etched all the way down to the box . in the gate , the nitride rie etch has gone down the same distance , but , since the gate is higher , there remains a nitride spacer that has a height higher than the silicon fins 30 . in front of the plane of fig9 b , there will be a nitride liner , denoted with dashed line 62 representing the top surface of the nitride liner , extending e - w across the aperture denoted with bracket 51 in fig8 . fig1 å shows the result of an epitaxial ( epi ) growth that expands the fins 30 . after clearing the conformal nitride 62 , 34 the oxide on the fin sidewalls 30 is removed by wet etch ( hf ), then the fins are grown wider using selective silicon or silicon - germanium epitaxy to produce material 65 , shown as filling the aperture between oxide blocks 50 and surrounding fins 30 . the epitaxial growth also occurs on the upper portion of the gate conductor , where poly is exposed . epitaxial fill 65 is shown as being at the same level as the top of oxide 32 on fins 30 , but the height is not critical . epi 65 may be only partly overlapping vertically oxide caps 32 . fig1 c shows a top view , in which epi 65 fills the area between fins 30 ( denoted with numeral 32 , since fins 30 are below the oxide 32 ). epi 65 also forms a liner on the n and s sides of gate 60 . gate 60 is shown with a dotted outline , since it is below the epi 65 . nitride liner 62 is also directly below epi 65 in fig1 c . fig1 b is the same as fig9 b , with the addition of epi 65 on top of gate 60 . the next steps are source / drain ion implant , silicidation , contact formation processes and metallization . each of the described processes then continues with a standard finfet process such as that described in j . kedzierski et al ., ieee transactions on electron devices v . 50 n . 4 april 2003 p . 952 - 958 , or any other convenient method of putting down gates on the fins and then performing standard back end processing , well known to the art . while the invention has been described in terms of a single preferred embodiment , those skilled in the art will recognize that the invention can be practiced in various versions within the spirit and scope of the following claims .