referring to fig2 a and 2b , a semiconductor component 46 constructed in accordance with the invention is illustrated . as used herein , the term “ semiconductor component ” refers to an element , or to an assembly , that includes a semiconductor die . in the illustrative embodiment , the component 46 comprises a board - on - chip ( boc ) semiconductor package . however , the semiconductor component 46 can comprise another type of semiconductor package such as a chip - on - board ( cob ) package , a chip scale package ( csp ), a bga device , or a bumped semiconductor die . the semiconductor component can also comprise a semiconductor wafer containing multiple semiconductor dice . the component 46 includes a substrate 50 having a first surface 56 ( fig2 b ), and an opposing second surface 58 ( fig2 b ). the first surface 56 , and the second surface 58 , are the major planar surfaces of the substrate 50 . the substrate also includes a wire bonding opening 68 therethrough , extending from the first surface 56 to the second surface 58 . in addition , the substrate 50 includes a pattern of primary conductors 60 ( fig2 b ) formed on the first surface 56 , and a corresponding die attach area 62 formed on the second surface 58 . the substrate 50 also includes a solder mask 64 on the first surface 56 , and a solder mask 66 on the second surface 58 . the substrate 50 comprises an electrically insulating material such as an organic polymer resin reinforced with glass fibers . suitable materials for the substrate 50 include bismaleimide - triazine ( bt ), epoxy resins ( e . g ., “ fr - 4 ” and “ fr - 5 ”), and polyimide resins . these materials can be formed with a desired thickness , and then punched , machined , or otherwise formed with a required peripheral configuration , and with required features . a representative thickness of the substrate 50 can be from about 0 . 2 mm to 1 . 6 mm . in addition to the substrate 50 , the component 46 includes an array of terminal contacts 48 on the substrate 50 in electrical communication with integrated circuits , or other electrical elements contained on the component 46 . the terminal contacts 48 provide separate electrical connection points for transmitting ( writing ) and receiving ( reading ) electronic signals from the component 46 . in addition , the terminal contacts 48 provide a structure for bonding the component 46 to a supporting substrate . in the illustrative embodiment , the terminal contacts 48 comprise generally spherically shaped contact balls in a ball grid array ( bga ), or a fine ball grid array ( fbga ). however , the terminal contacts 48 can comprise other conventional contacts having other shapes , and arranged in other patterns , to provide multiple electrical connection points for the component . by way of example , representative contacts include bumps , columns , studs , domes and cones . also , the terminal contacts can be made of any electrically conductive material , such as a solder alloy as previously discussed , copper , nickel , or a conductive polymer . as shown in fig2 a , the terminal contacts 48 have a diameter “ d ” and a spacing or pitch “ p ”. with the terminal contacts 48 comprising contact balls in a ball grid array , or a fine ball grid array , a representative range for the diameter d can be from about 0 . 127 mm ( 0 . 005 inch ) to 0 . 762 mm ( 0 . 030 inch ). a representative range for the pitch p can be from about 0 . 228 mm ( 0 . 008 inch ) to 2 . 0 mm ( 0 . 078 inch ), for convenience , the terminal contacts 48 are labeled with a letter and a numeral ( a 1 - j 1 ) that indicate their location in the grid array . as shown in fig2 b , the component 46 also includes a semiconductor die 52 , and a die encapsulant 54 on the die 52 and on the second surface 58 of the substrate 50 . the die 52 includes a row of bond pads 70 formed on a face portion thereof , in electrical communication with the integrated circuits contained in the die 52 . the die 52 is bonded face down to the die attach area 62 of the substrate 50 with the bond pads 70 on the die 52 aligned with the bonding opening 68 in the substrate 50 . an adhesive layer 72 bonds the die 52 to die attach area 62 of the substrate 50 . the adhesive layer 72 can comprise a filled epoxy , an unfilled epoxy , an acrylic , a polyimide or an adhesive tape material . in addition , wires 74 are placed through the wire bonding opening 68 in the substrate 50 and are wire bonded to the bond pads 70 on the die 52 , and to corresponding wire bonding pads 76 ( fig2 c ) on the substrate 50 . a wire bond encapsulant 78 fills the wire bonding opening 68 and encapsulates the wires 74 . the wire bond encapsulant 78 can comprise a glob top polymer material , such as epoxy or silicone , deposited in a desired shape using a suitable process such as dispensing through a nozzle . the encapsulant 54 can comprise a novolac based epoxy formed in a desired shape using a transfer molding process , and then cured using an oven . referring to fig2 c , the component 46 ( fig2 a ) also includes bonding pads 80 on the substrate 50 for bonding the terminal contacts 48 to the substrate 50 . the bonding pads 80 are in electrical communication with the primary conductors 60 and the wire bonding pads 76 . in addition , the bonding pads 60 are in electrical communication with plating conductors 60 p on the substrate 50 that extend to an edge of the substrate 50 . the plating conductors 60 p are initially connected to plating buses 82 , which are used to apply a current to the bonding pads 80 and to the wire bonding pads 76 for plating a non - oxidizing metal layer 84 ( fig2 f and 2g ) such as gold on the bonding pads 80 and the wire bonding pads 76 . as shown in fig2 d and 2e , the solder mask 64 covers the substrate 50 and the conductors 60 . however , as shown in fig2 f and 2g , the solder mask 64 includes openings 86 aligned with the bonding dads 20 and the wire bonding pads 76 . as also shown in fig2 c , selected bonding pads 80 - 1 on the ends of the array include secondary conductors 60 - 1 . these secondary conductors 60 - 1 provide alternate electrical paths for the selected bonding pads 80 - 1 should the conductors 60 break as previously described . in addition , the secondary conductors 60 - 1 help to anchor the selected bonding pads 80 - 1 and associated terminal contacts 48 to the substrate 50 . as shown in fig2 c , the secondary conductor 60 - 1 is attached to the bonding pad 80 - 1 at a connection point 81 which is about 180 ° from a connection point 83 of the primary conductor 60 to the bonding pad 80 - 1 . in addition , the secondary conductor 60 - 1 makes about a 90 ° angle to intersect with the plating conductor 60 p for the bonding pad 80 - 1 at connection point 85 . the secondary conductor 60 - 1 then extends along a periphery of the bonding pad 80 - 1 generally parallel to the primary conductors 60 , then makes about a 90 ° turn to intersect with the primary conductor 60 for the bonding pad 80 - 1 at a connection point 87 . the connection point 87 of the secondary conductor 60 - 1 with the primary conductor 60 is well past the connection point 83 at which the primary conductor 60 connects to the bonding pad 80 - 1 . as the primary conductor 60 is most likely to break at connection point 83 the secondary conductor 60 - 1 provides an alternate path around the likely breaking point . as also shown in fig2 c , other selected bonding pads 80 - 2 on the outside corners of the array include multiple secondary conductors 60 - 2 , 60 - 3 . in particular , the selected bonding pads 80 - 2 each includes two secondary conductors 602 , 60 - 3 . again , the secondary conductors 60 - 2 , 60 - 3 provide alternate electrical paths , and help to anchor the selected bonding pads 80 - 1 , 80 - 2 and associated terminal contacts 48 to the substrate 50 . as also shown in fig2 c , secondary conductor 60 - 3 has a connection point 89 with the bonding pad 80 - 2 proximate to the plating conductor 60 p . in addition , secondary conductor 60 - 3 has a connection point 93 with the primary conductor 60 for the bonding pad 80 - 2 . again the connection points 91 , 93 are located to provide an alternate electrical path around a connection point 95 of the bonding pad 80 - 2 with the primary conductor 60 . secondary conductor 60 - 2 has two connection points with the bonding pad 80 - 2 including a first connection point 89 proximate to the plating conductor 60 p , and a second connection point 97 about 90 ° from the plating conductor 60 p . referring to fig3 a and 3b , the substrate 50 can initially comprise a segment of a panel 88 . the panel 88 is similar in function to a semiconductor lead frame , and includes multiple substrates 50 permitting the fabrication of multiple components 46 ( fig2 a ) at the same time . the panel 88 includes circular indexing openings 90 proximate to the longitudinal edges thereof . the indexing openings 90 permit the panel 88 to be handled by automated transfer mechanisms associated with chip bonders , wire bonders , molds , and trim machinery . in addition , the panel 88 includes elongated separation openings 92 which facilitate singulation of the substrates 50 on the panel 88 into separate components 46 ( fig2 a ). the plating buses 82 for the plating conductors 60 p are located proximate to the separation openings 92 , and are severed during singulation of the substrates 50 . the primary conductors 60 , secondary conductors 60 - 1 , 60 - 2 , 60 - 3 , plating conductors 60 p , bonding pads 80 and wire bonding pads 76 can comprise a highly conductive metal layer , which is blanket deposited onto the panel 88 ( e . g ., electroless or electrolytic plating ), and then etched in required patterns . alternately , an additive process , such as electroless deposition through a mask , can be used . suitable metals include copper , aluminum , titanium , tungsten , tantalum , platinum , molybdenum , cobalt , nickel , gold , and iridium . if desired , the panel 88 can be constructed from a commercially produced bi - material core , such as a copper clad bismaleimide - triazine ( bt ) core , available from mitsubishi gas chemical corp ., japan . a representative weight of the copper can be from 0 . 5 oz to 2 oz . per square foot . as also shown in fig3 a and 3b , the panel 88 also includes triangular metal segments 94 , and circular metal segments 96 for each substrate 50 . the metal segments 94 , 96 can comprise a same metal as the conductors 60 . the triangular metal segments 94 function as pin # 1 indicators . the circular metal segments 96 function as alignment fiducials . referring to fig4 a - 4c , steps in a method for fabricating the component 46 are illustrated . although these steps are shown as being performed on a single substrate 50 , it is to be understood that the steps are performed on each of the substrates 50 contained on the panel 88 , substantially at the same time . initially , as shown in fig4 a , the substrate 50 can be provided with the primary conductors 60 , the secondary conductors 60 - 1 , 60 - 2 , 60 - 3 , the plating conductors 60 p , the bonding pads 80 and the wire bonding pads 76 . in addition , the die attach area 62 can include the wire bonding opening 68 formed through the substrate 50 . as also shown in fig4 a , the solder masks 64 , 66 can be formed by blanket depositing , exposing and then patterning a photoimageable dielectric material , such as a negative or positive tone resist . the solder mask 64 on the first surface 56 of the substrate 50 includes openings 86 aligned with the bonding pads 80 and the wire bonding pads 76 . the solder mask 66 on the second surface 58 of the substrate 50 includes an opening 69 having an outline that is slightly larger than the outline of the semiconductor die 52 . one suitable resist is commercially available from taiyo america , inc ., carson city , nev ., under the trademark “ psr - 4000 ”. the “ psr - 4000 ” resist can be mixed with an epoxy such as epoxy “ 720 ” manufactured by ciba - geigy ( e . g ., 80 % psr - 4000 and 20 % epoxy “ 720 ”). another suitable resist is commercially available from shipley under the trademark “ xp - 9500 ”. following forming of the solder masks 64 , 66 the bonding pads 80 and the wire bonding pads 76 can be plated with the nonoxidizing layers 84 ( fig2 f and 2g ) using the plating bus 82 ( fig3 a ), and electrolytic deposition of a nonoxidizing metal ( e . g ., gold ) through the openings 86 in the solder mask 64 . next , as shown in fig4 b , the die 52 can be bonded to the substrate 50 using the adhesive layer 72 . a conventional die attacher can be used to form the adhesive layer 72 and adhesively bond the die 52 to the substrate 50 . as also shown in fig4 b , following attachment of the die 52 to the substrate 50 , the wires 74 can be wire bonded to the wire bonding pads 76 , and to the bond pads 70 on the die 52 . a conventional wire bonder can be used to perform the wire bonding step . although in the illustrative embodiment , the die 52 is mounted face down to the substrate 50 , the die 52 can alternately be back bonded to the substrate 50 , and wire bonded to conductors located on a same surface of the substrate 50 as the die 52 . as an alternative to wire bonding , a flip chip process ( e . g ., c 4 ), or a tab bonding process , can be used to electrically connect the die 52 to the conductors 60 . next as shown in fig4 c , following wire bonding , the die encapsulant 54 can be formed on the die 52 and on the substrate 50 . the die encapsulant 54 can comprise a novolac based epoxy formed in a desired shape using a transfer molding process , and then cured using an oven . also , if desired , the wire bond encapsulant 78 can be formed on the wires 74 . as also shown in fig4 c , following formation of the die encapsulant 54 , the terminal contacts 48 can be bonded to the bonding pads 80 . if the terminal contacts 48 comprise solder , a solder reflow process can be employed . prior to the solder reflow process , solder flux can be deposited on the bonding pads 80 and on the terminal contacts 48 . the terminal contacts 48 can then be placed on the bonding pads 80 , and a furnace used to form metallurgical solder joints 116 between the terminal contacts 48 and the bonding pads 80 . referring to fig5 a - 5c , an electronic assembly 98 constructed in accordance with the invention is illustrated , the electronic assembly 98 includes a supporting substrate 100 and a plurality of the semiconductor components 46 mounted to the supporting substrate 100 . in the illustrative embodiment the assembly 98 is in the form of a multi chip module , such as a simm or dimm memory module . however , it is to be understood that the semiconductor component 46 can be used to construct other types of electronic assemblies such as circuit boards , card assemblies , and ball grid array assemblies . the supporting substrate 100 includes an electrical connector 102 , such as an edge connector , and a pattern of conductors 106 in electrical communication with the electrical connector 102 . the supporting substrate 100 also includes an array of contact pads 104 ( fig5 b ) having a pattern matching that of the terminal contacts 48 on the components 46 . the contact pads 104 are in electrical communication with the conductors 106 and with the electrical connector 102 . the terminal contacts 48 on the components 46 are bonded to the contact pads 104 substantially as previously described using solder joints 118 ( fig5 b ). as shown in fig5 c , during operation of the assembly 58 alternate electrical paths are provided for selected bonding pads 80 - 1 , 80 - 2 should the primary conductors 60 associated with these bonding pads 80 - 1 , 80 - 2 become damaged . in the illustrative embodiment , alternate electrical paths are provided by the secondary conductor for the bonding pads subject to the highest loads from thermal cycling ( e . g ., end pads and corner pads of the array ). however , it is to be understood that alternate electrical paths can be provided for any or all of the bonding pads of the array . as shown in fig5 c , a break 108 has formed between the primary conductor 60 associated with bonding pad 80 - 1 . however , an alternate electrical path , as indicated by arrows 112 , is provided by secondary conductor 60 - 1 . similarly , a break 110 has formed between the primary conductor 60 associated with bonding pad 80 - 2 . however , two alternate electrical paths , as indicated by arrows 114 , are provided by secondary conductors 60 - 2 and 60 - 3 . in addition , to providing alternate electrical paths , the secondary conductors 60 - 1 , 60 - 2 , 60 - 3 help to anchor the bonding pads 80 - 1 , 80 - 2 to the substrate 50 , such that the breaks 108 , 110 are less likely to occur . referring to fig6 a - 6c and fig7 alternate embodiment components constructed in accordance with the invention are illustrated . in fig6 a , a component 46 w comprises a semiconductor wafer containing a plurality of bumped semiconductor dice 46 d . as shown in fig6 b , each die 46 d , following singulation from the wafer , can also be considered a component . as shown in fig6 c , each die 46 d includes a semiconductor substrate 119 , bond pads 120 on the substrate 119 in electrical communication with the integrated circuits in the substrate 119 , and bumped terminal contacts 48 b on the bond pads 120 . in this embodiment , the bumped terminal contacts 48 b can comprise contact bumps formed on the bond pads 120 using a deposition process , such as evaporation of a ball limiting metallurgy ( blm ) and solder material through openings in a metal mask . in addition to the bumped terminal contacts 48 b , the ball limiting metallurgy ( blm ) can include a multi layered stack ( not shown ) such as an adherence layer ( e . g ., cr ), a solderable layer ( e . g ., cu ) and a flash layer ( e . g ., au ). this process is also known as c 4 technology , and is typically used to deposit bumped terminal contacts 46 b directly onto bond pads 120 made of aluminum alternately , other deposition processes , such as electroless deposition , or electrolytic deposition can be used to form the bumped terminal contacts 48 b . as shown in fig7 a component 46 c , such as a semiconductor package , includes a bond pad 122 and a column terminal contact 48 c bonded to the bond pad 122 using a ad solder fillet 124 . this type of component 46 c is sometimes referred to as a ceramic column grid array ( ccga ). the column terminal contact 4 rc comprises an elongated contact column configured for bonding to a corresponding contact pad on a supporting substrate substantially as previously described . in each of the alternate embodiment components 46 w , 46 d or 46 c , secondary electrical conductors can be provided for selected terminal contacts 48 b , 48 c substantially as previously described . in addition , the secondary electrical conductors function substantially as previously described to provide alternate electrical paths should the primary conductors in electrical communication with the bond pads 120 , 124 become damaged . thus the invention provides an improved semiconductor component , a method for fabricating the component , and an electronic assembly constructed using the component . the component includes terminal contacts having multiple electrical conductors that provide alternate electrical paths and a rigidifying structure . while the invention has been described with reference to certain preferred embodiments , as will be apparent to those skilled in the art , certain changes and modifications can be made without departing from the scope of the invention as defined by the following claims .