reference will now be made in detail to the preferred embodiments of the present invention , which are illustrated in the accompanying drawings . wherever possible , the same reference numbers will be used throughout the drawings to refer to the same or like parts . in the principal of the present invention , a plan view and explanation thereof are omitted since a plan view of an inventive array substrate is somewhat similar to that of a conventional art shown in fig3 . [ 0058 ] fig7 a to 7 f , 8 a to 8 f , and 9 a to 9 f are sequential cross - sectional views respectively taken along lines vii - vii , viii - viii , ix - ix of fig3 according to a first embodiment of the present invention . in the first embodiment of the present invention , the gate electrode and gate line have double - layered structures using titanium ( ti ) and aluminum - based material ( e . g ., aluminum neodymium ( alnd )). furthermore , the reflective electrode also has double - layered structure using molybdenum ( mo ) and aluminum ( al ). now , referring to fig7 a , 8a and 9 a , a first metal and a second metal are deposited on a substrate 111 and then patterned to form a double - layered gate line 125 arranged transversely upon the substrate 111 , a double - layered gate pad 129 disposed at the end of the double - layered gate line 125 ( in fig3 ), and a double - layered gate electrode 132 extending from the double - layered gated line 125 . the first metal for the first layers 125 a , 129 a and 132 a is substantially aluminum - based material , such as aluminum neodymium ( alnd ), while the second metal for the second layers 125 b , 129 b and 132 b is substantially titanium ( ti ). pure aluminum ( al ) is conventionally used as a metal for the gate line 125 , gate pad 129 and gate electrode 132 because of its low resistance and reduced signal delay . however , pure aluminum is chemically weak when exposed to acidic processing and may result in formation of hillocks during high temperature processing . accordingly , multi - layered aluminum structures , as shown in fig7 a , 8a and [ 0060 ] 9 a , are used for the gate line 125 , pad 129 and electrode 132 . since the second layers 125 b , 129 b and 132 b are formed of titanium ( ti ), these second layers 125 b , 129 b and 132 b protect the first layers 125 a , 129 a and 132 a from the etching solution for the transparent conductive material although the gate - insulating layer and the passivation layer have cracks or pin - holes in a later steps , in contrast with the conventional art . next , referring to fig7 b , 8b and 9 b , a gate - insulating layer 143 is formed upon the entire surface of the substrate 111 to cover the patterned first and second metal layers . the gate - insulating layer 143 includes at least an inorganic substance , such as silicon oxide ( sio 2 ) or silicon nitride ( sin x ). thereafter , an amorphous silicon ( a - si ) and an impurity - doped amorphous silicon are sequentially formed and subsequently patterned into an island shape to form an active layer 134 and an ohmic contact layer 147 upon the gate - insulating layer 143 , especially over the double - layered gate electrode 132 . thereafter , a third metal , especially chrome ( cr ), is deposited upon the gate - insulating layer 143 to cover the ohmic contact layer 147 and then patterned to form a data line 127 , a source electrode 133 , a drain electrode 135 , a capacitor electrode 149 and a data pad 131 . the source electrode 133 protrudes from the data line 127 , and the drain electrode 135 is spaced apart from the source electrode 133 . the source electrode 133 and the drain electrode 135 overlap end portions of the active layer 134 with a center portion the active layer 134 positioned therebetween . as mentioned before , the data line 127 is perpendicular to the double - layered gate line 125 , and the data pad 131 is positioned at the end of the data line 127 . the capacitor electrode 149 overlaps a portion of the double - layered gate line 125 . an exposed portion of the ohmic contact layer 147 is etched away between the source electrode 133 and the drain electrode 135 . at this point , since the top portions of the gate line 125 , gate pad 129 and gate electrode 132 are formed of titanium ( ti ), the firstly formed metal ( i . e ., the gate line 125 , the gate pad 129 and the gate electrode 132 ) are not eroded or deteriorated by the etchant for chrome ( i . e ., third metal ) although the gate - insulating layer 143 has cracks or pin - holes . referring to fig7 c , 8c and 9 c , a first passivation layer 151 is formed upon the source electrode 133 , the drain electrode 135 , the capacitor electrode 149 and the data line 131 . the first passivation layer 151 includes at least one of an organic insulating material and an inorganic material . by patterning the first passivation layer 151 , a first drain contact hole 153 that exposes a portion of the drain electrode 135 is formed . at this time , a first capacitor contact hole 157 and a first data pad contact hole 161 are also formed by patterning the first passivation layer 51 . furthermore , by patterning both the first passivation layer 151 and the gate - insulating layer 143 , an etching hole 155 corresponding to the through - hole “ a ” and a first gate pad contact hole 159 are formed . the first capacitor contact hole 157 exposes a portion of the capacitor electrode 149 , the first gate pad contact hole 159 exposes a portion of the gate pad 29 , and the first data pad contact hole 161 exposes a portion of the data pad 131 . thereafter , a transparent conductive material , such as indium tin oxide ( ito ), indium zinc oxide ( izo ) or indium tin zinc oxide ( itzo ), is deposited upon the first passivation layer 151 having the holes and subsequently patterned to form a transparent electrode 119 a , a gate pad terminal 165 and a data pad terminal 167 . the transparent electrode 119 a electrically contacts the drain electrode 135 through the first drain contact hole 153 , and the gate pad terminal 165 electrically contacts the double - layered gate pad 129 through the first gate pad contact hole 159 . additionally , the data pad terminal 167 electrically contacts the data pad 131 through the first data pad contact hole 161 . at this point , the transparent electrode 119 a preferably overlaps portions of the double - layered gate line 125 and contacts the capacitor electrode 149 , and thus the transparent electrode 119 a and the capacitor electrode 149 acts as a first capacitor electrode in the storage capacitor “ s ” ( in fig3 ). further , a portion of the double - layered gate line 125 acts as a second capacitor electrode in the storage capacitor “ s ” ( in fig3 ). now referring to fig7 d , 8d and 9 d , an insulating material such as silicon oxide or silicon nitride , for example , is deposited upon the transparent electrode 119 a and subsequently patterned to form a second passivation layer 169 . the second passivation layer 169 comprises a second drain contact hole 153 a positioned over the drain electrode 135 and a second capacitor contact hole 157 a over the capacitor electrode 149 . at this time , a second gate pad contact hole 159 a and a second data pad contact hole 161 a are also formed by patterning the second passivation layer 169 . as shown in fig8 d and 9d , the second gate pad contact hole 159 a exposes a portion of the double - layered gate pad 129 , and the second data pad contact hole 161 a exposes a portion of the data pad 131 . next , referring to fig7 e , 8e and 9 e , molybdenum ( mo ) 166 and aluminum - based material ( e . g . aluminum neodymium ( alnd )) 168 are formed in series upon the second passivation layer 159 having the second contact holes . thereafter , referring to fig7 f , 8f and 9 f , molybdenum ( mo ) 166 and aluminum - based material 168 are patterned using a mixed etching solution with phosphoric acid , acetic acid and nitric acid , thereby forming a first reflective electrode 166 a and a second reflective electrode 168 a which have a through - hole “ a ”. the first reflective electrode 166 a and the second reflective electrode 168 a act together as the reflective electrode 19 b of fig4 . the first and second reflective electrodes 166 a and 168 a electrically contact the transparent electrode 119 a via the second drain contact hole 153 a and second capacitor contact hole 157 a such that the first and second reflective electrodes 166 a and 168 a and the drain electrode 135 are electrically interconnected . further , the etching hole 155 corresponding to the through - hole “ a ” is opened to form the transparent portion . additionally , the gate pad terminal 165 and the data pad terminal 167 are also exposed when forming the first and second reflective electrodes 166 a and 168 a . therefore , the array substrate for the lcd device is complete according to the first embodiment of the present invention . as described before , the additional processes for forming the second gate pad contact hole 159 a and second data pad contact hole 161 a are not required because these pad contact holes are formed together with the etching hole 155 and second capacitor contact hole 157 a , thereby decreasing the manufacturing process and increasing the manufacturing yield . furthermore , although the gate - insulating layer 143 and the first passivation layer 151 have defects such as cracks or pin - holes , the firstly formed metal layer are not deteriorated due to the fact that the top potion thereof is formed of titanium ( ti ) having corrosion - resisting characteristics . [ 0069 ] fig1 a to 10 d , 11 a to 11 d and 12 a to 12 d are sequential cross - sectional views respectively taken along lines x - x , xi - xi and xii - xii of fig3 according to a second embodiment of the present invention . in the second embodiment , the gate line , the gate pad , the gate electrode and the reflective electrode altogether have single - layered structures . referring to fig1 a , 11a and 12 a , a first metal is deposited and patterned upon a transparent substrate 111 such that a gate pad 129 , a gate line 125 , and a gate electrode 132 are formed . as a material for the first metal , aluminum ( al ), aluminum neodymium ( alnd ), tungsten ( w ), chromium ( cr ) or molybdenum ( mo ) is conventionally employed . alternatively , the gate line 125 , gate pad 129 and the gate electrode 132 can have the double - layered structures as described in the first embodiment ( in fig7 a , 8a and 9 a ) of the present invention . the gate line 125 extends from and is connected with the gate pad 129 , and the gate electrode 132 protrudes from the gate line 125 ( in fig3 ). thereafter , a gate - insulating layer 143 is formed on the transparent substrate 111 to cover the metal layer previously formed . the gate - insulating layer 143 may be an inorganic substance , such as silicon nitride ( sin x ) or silicon oxide ( sio 2 ). subsequently , amorphous silicon ( a - si ) and impurity - doped amorphous silicon ( n + / p + a - si ) are formed in series on the gate - insulating layer 143 . the amorphous silicon and impurity - doped amorphous silicon are simultaneously patterned into an island shape to form an active layer 134 and an ohmic contact layer 147 , respectively . the active layer 134 is formed on the gate - insulating layer 143 , particularly over the gate electrode 132 , and the ohmic contact layer 147 is formed on the active layer 134 . also , a source electrode 133 and a drain electrode 135 are formed of a second metal on the ohmic contact layer 147 . by depositing and patterning this second metal , not only are the source electrode 133 and the drain electrode 135 formed , but the data line 127 , a capacitor electrode 149 and a data pad 131 are also formed on the gate - insulating layer 143 such that the source electrode 133 extends from the data line 127 . the source electrode 133 and the drain electrode 135 are spaced apart from each other and respectively overlap opposite ends of the gate electrode 132 . the capacitor electrode 149 overlaps a portion of the gate line 125 to define the storage capacitor “ s ” of fig3 . moreover , a portion of the ohmic contact layer 147 between the source electrode 33 and drain electrode 35 is eliminated to form a channel region . now referring to fig1 b , 11b and 12 b , a first passivation layer 151 is formed on and over the above - mentioned intermediates by depositing an organic substance , such as bcb ( benzocyclobutene ) or an acryl - based resin , or an inorganic substance , such as silicon oxide or silicon nitride . by patterning the first passivation layer 151 , a first drain contact hole 153 that exposes a portion of the drain electrode 135 is formed . at this time , a first capacitor contact hole 157 and a first data pad contact hole 161 are also formed by patterning the first passivation layer 151 . furthermore , by patterning both the first passivation layer 151 and the gate - insulating layer 143 , an etching hole 155 corresponding to the through - hole “ a ” and a first gate pad contact hole 159 are formed . the first capacitor contact hole 157 exposes a portion of the capacitor electrode 149 ; the first gate pad contact hole 159 exposes a portion of the gate pad 129 ; and the first data pad contact hole 161 exposes a portion of the data pad 131 . thereafter , a transparent conductive material , such as indium tin oxide ( ito ), indium zinc oxide ( izo ) or indium tin zinc oxide ( itzo ), is deposited upon the first passivation layer 151 having the holes and subsequently patterned to form a transparent electrode 119 a , a gate pad terminal 165 and a data pad terminal 167 . the transparent electrode 119 a electrically contacts the drain electrode 135 through the first drain contact hole 153 , and the gate pad terminal 165 electrically contacts the gate pad 129 through the first gate pad contact hole 159 . additionally , the data pad terminal 167 electrically contacts the data pad 131 through the first data pad contact hole 161 . at this point , the transparent electrode 119 a preferably overlaps portions of the gate line 125 and contacts the capacitor electrode 149 , and thus the transparent electrode 119 a and the capacitor electrode 149 acts as a first capacitor electrode in the storage capacitor “ s ” ( in fig3 ). further , a portion of the gate line 125 acts as a second capacitor electrode in the storage capacitor “ s ”. next , as shown in fig1 c , 11c and 12 c , an insulating material such as silicon oxide , for example , is deposited upon the transparent electrode 119 a and subsequently patterned to form a second passivation layer 169 . the second passivation layer 169 includes a second drain contact hole 153 a positioned over the drain electrode 135 and a second capacitor contact hole 157 a over the capacitor electrode 149 . thereafter , a third metal is deposited upon the second passivation layer 169 and subsequently patterned to form a reflective electrode 119 b having a through - hole “ a ”. the second metal is preferably aluminum ( al ) or aluminum alloy ( e . g ., aluminum neodymium ( alnd )) which have low resistance and high reflectance properties . additionally , a photo resist ( not shown ) is used for patterning the third metal . the reflective electrode 119 b electrically contacts the transparent electrode 119 a via the second drain contact hole 153 a and second capacitor contact hole 157 a such that the reflective electrode 119 b and the drain electrode 165 are electrically interconnected . namely , a first portion of the reflective electrode 119 b is electrically connected with the drain electrode 135 through the second drain contact hole 153 a , and a second portion of the reflective electrode 119 b is electrically connected with the capacitor electrode 149 through the second capacitor contact hole 157 a . next , referring to fig1 d , 11d and 12 d , exposed portions of the second passivation layer 169 are patterned to exposed the gate pad terminal 165 and data pad terminal 167 . at this point , there are two methods of patterning the second passivation layer 169 . in the first method of pattering the second passivation layer 169 , the photo resist for forming the reflective electrode 119 b is first removed and subsequently etches the exposed second passivation layer 169 using a dry etching method . at this time , the reflective electrode 119 b functions as a etch stopper . therefore , the third metal for the reflective electrode 119 b should be very resistant to the dry etching with the low resistance and high reflectance properties . in the second method of patterning the second passivation layer 169 , the exposed second passivation layer 169 is first etched using a dry etching method before removing the photo resist for the reflective electrode 119 b . further in the second method , an ash process is employed to remove the photo resist for the reflective electrode 119 b . if the photo resist for the reflective electrode 119 b is removed by a wet stipper using a wet etching method , galvanic corrosion occurs between the reflective electrode 119 b and the transparent electrode 119 a because the wet stripper is an electrolytic solution . therefore , when using the ash process for removing the photo resist , galvanic corrosion does not occur between the reflective electrode 119 b and the transparent electrode 119 a . accordingly , from one of the above - mentioned methods for patterning the second passivation layer 169 , the gate pad terminal 165 and the data pad terminal are completely exposed . additionally , the second passivation layer 169 only remains under the reflective electrode 119 b , as shown in fig1 d , 11d and 12 d . in the second embodiment of the present invention , since the second passivation layer is etched using the reflective electrode or photo resist on the reflective electrode as masks , additional mask process is not required to expose the gate and data pad terminals . therefore , the manufacturing processes are reduced . [ 0080 ] fig1 a to 13 c , 14 a to 14 c and 15 a to 15 c are sequential cross - sectional views respectively taken along lines xiii - xiii , xiv - xiv and xv - xv of fig3 according to a third embodiment of the present invention . in the third embodiment , the gate line , the gate pad and the gate electrode altogether have single - layered structures , while the reflective electrode has a double - layered structure . additionally , since fig1 a , 14a and 15 a are the same as fig1 b , 11b and 12 b of the second embodiment , the third embodiment of the present invention is briefly described and some explanation of the third embodiment is omitted . referring to fig1 a , 14a and 15 a , a thin film transistor ( tft ) “ t ” is formed on the substrate 111 . the tft “ t ” includes a gate line 132 , an active layer 134 , an ohmic contact layer 147 , a source electrode 133 and a drain electrode 135 . a gate - insulating layer 143 isolates the gate electrode 132 from the active layer 134 and the source and drain electrodes 133 and 135 . a gate line 125 is formed in one direction on the substrate 111 , and a gate pad 129 is positioned at the end of the gate line 125 . the gate electrode 132 extends from the gate line 125 , and the source electrode 133 extends from the data line 127 . when forming the source and drain electrodes 133 and 135 , a capacitor electrode 149 over the gate line 125 and the data pad 131 are also formed . a first passivation layer 151 , such as benzocyclobutene ( bcb ) or acryl - based resin , covers the tft “ t ”, the capacitor electrode 149 and the data pad 131 . as shown in fig1 a , 14a and 15 a , the first passivation layer 151 has a first drain contact hole 153 to the drain electrode 135 , a first capacitor contact hole 157 to the capacitor electrode 149 , a first gate pad contact hole 159 to the gate pad 129 , a first data pad contact hole 161 to the data pad 131 , and an etching hole 155 corresponding to a through - hole ( i . e ., a transmissive portion ) “ a ”. a transparent electrode 119 a , a gate pad terminal 165 and a data pad terminal 167 are formed on the first passivation layer 151 by patterning the transparent conductive material , such as ito or izo . a first portion of the transparent electrode 119 a contacts the drain electrode 135 through the first drain contact hole 153 , while a second portion of the transparent electrode 119 a contacts the capacitor electrode 149 through the first capacitor contact hole 157 . the gate pad terminal 165 and the data pad terminal 167 have island shape , and contact the gate pad 129 through the first gate pad contact hole 159 and the data pad 131 through the first data pad contact hole 161 , respectively . now , referring to fig1 b , 14b and 15 b , an insulating material is deposited upon the transparent electrode 119 a and subsequently patterned to form a second passivation layer 169 . here , the insulating material is an inorganic substance , such as silicon oxide or silicon nitride , or an organic substance , such as benzocyclobutene ( bcb ) or acryl - based resin . the second passivation layer 169 comprises a second drain contact hole 153 a positioned over the drain electrode 135 and a second capacitor contact hole 157 a positioned over the capacitor electrode 149 . at this time , a second gate pad contact hole 159 a and a second data pad contact hole 161 a are also formed by patterning the second passivation layer 169 . the second gate pad contact hole 159 a exposes a portion of the gate pad 129 , and the second data pad contact hole 161 a exposes a portion of the data pad 131 . thereafter , a corrosion - resistant metal layer ( a first layer ) 166 , such as a chromium ( cr ) layer , is formed on the second passivation layer 169 having the second contact holes 153 a , 157 a , 159 a and 161 a . subsequently , aluminum - based layer ( a second layer ) 168 , such as al or alnd layer , is formed on the corrosion - resistant metal layer 166 . thereafter , the corrosion - resistant metal layer 166 and aluminum - based layer 168 are patterned using a mixed etching solution with phosphoric acid , acetic acid and nitric acid . if the corrosion - resistant metal layer 166 is formed of chromium ( cr ), the etching solution includes a ceric ammonium nitrate solution . additionally , during this etching process , the corrosion - resistant metal layer 166 protects the gate and data pad terminals 165 and 167 from the etching solution for the aluminum - based layer 168 . from this etching process , formed are a first reflective electrode 166 a and a second reflective electrode 168 a both having a through - hole “ a ”, as shown in fig1 c . the first reflective electrode 166 a and the second reflective electrode 168 a act together as the reflective electrode 119 b of fig1 d . as shown in fig1 c , 14c and 15 c , the double - layered reflective electrodes 166 a and 168 a contact the transparent electrode 119 a via the second drain contact hole 153 a and second capacitor contact hole 157 a such that the double - layered reflective electrodes 166 a and 168 a and the drain electrode 165 are electrically interconnected . further , the etching hole 155 corresponding to the through - hole “ a ” is opened to form the transparent portion . additionally , the gate pad terminal 165 and the data pad terminal 167 are also exposed when forming the double - layered reflective electrodes 166 a and 168 a . therefore , the array substrate for the lcd device is complete according to the third embodiment of the present invention . in the third embodiment described above , the second layer 168 of the double - layered reflective electrode is first etched , and then the first layer 166 of the double - layered reflective electrode is etched . namely , aluminum - based layer 168 which causes galvanic corrosion with the transparent conductive material is etched before etching the corrosion - resistant metal layer 166 which does not cause galvanic corrosion with the transparent conductive material . therefore , the gate pad terminal 165 and the data pad terminal 167 are not deteriorated and corroded when forming the double - layered reflective electrode . furthermore , the additional processes are not required to expose the gate pad terminal 165 and the data pad terminal 167 , unlike the conventional art . [ 0087 ] fig1 a to 16 c , 17 a to 17 c and 18 a to 18 c are sequential cross - sectional views respectively taken along lines xvi - xvi , xvii - xvii and xviii - xviii of fig3 according to a fourth embodiment of the present invention . in the fourth embodiment , the second passivation layer between the transparent electrode and the reflective electrode is not necessary , unlike the conventional art . additionally , since fig1 a , 17a and 18 a are the same as fig1 b , 11b and 12 b of the second embodiment , the fourth embodiment of the present invention is briefly described and some explanation of the fourth embodiment is omitted . referring to fig1 a , 17a and 18 a , a thin film transistor ( tft ) “ t ” is formed on the substrate 111 . the tft “ t ” includes a gate line 132 , an active layer 134 , an ohmic contact layer 147 , a source electrode 133 and a drain electrode 135 . a gate - insulating layer 143 isolates the gate electrode 132 from the active layer 134 and the source and drain electrodes 133 and 135 . a gate line 125 is formed in one direction on the substrate 111 , and a gate pad 129 is positioned at the end of the gate line 125 . the gate electrode 132 extends from the gate line 125 , while the source electrode 133 extends from the data line 127 . when forming the source and drain electrodes 133 and 135 , a capacitor electrode 149 over the gate line 125 and the data pad 131 are also formed . a passivation layer 151 , such as benzocyclobutene ( bcb ) or acryl - based resin , is formed to cover the tft “ t ”, the capacitor electrode 149 and the data pad 131 . as shown in fig1 a , 17a and 18 a , the passivation layer 151 has a drain contact hole 153 to the drain electrode 135 , a capacitor contact hole 157 to the capacitor electrode 149 , a gate pad contact hole 159 to the gate pad 129 , a data pad contact hole 161 to the data pad 131 , and an etching hole 155 corresponding to a through - hole ( i . e ., a transmissive portion ) “ a ”. a transparent electrode 119 a , a gate pad terminal 165 and a data pad terminal 167 are formed on the passivation layer 151 by patterning the transparent conductive material , such as ito or izo . a first portion of the transparent electrode 119 a contacts the drain electrode 135 through the drain contact hole 153 , while a second portion of the transparent electrode 119 a contacts the capacitor electrode 149 through the capacitor contact hole 157 . the gate pad terminal 165 and the data pad terminal 167 have island shape , and contact the gate pad 129 through the first gate pad contact hole 159 and the data pad 131 through the first data pad contact hole 161 , respectively . now , referring to fig1 b , 17b and 18 b , a corrosion - resistant metal layer ( a first layer ) 166 , such as a chromium ( cr ) or molybdenum ( mo ) layer , is formed on the passivation layer 151 to cover the patterned transparent conductive material . subsequently , aluminum - based layer ( a second layer ) 168 , such as al or alnd layer , is formed on the corrosion - resistant metal layer 166 . therefore , a double - layered structure is complete for the double - layered reflective electrode . thereafter , a photolithography process is performed as follows . first , a photo resist is formed on the second layer 168 and exposed to the light . the light - exposed portions of the photo resist is stripped to form a photo resist pattern 170 , thereby exposing the second layer 168 except for a portion for reflective electrode . when removing the exposed portion of the second layer ( the aluminum - based layer ) 168 , a mixed etching solution including phosphoric acid , acetic acid and nitric acid is used . however , when removing the first layer ( the corrosion - resistant metal layer , e . g ., chromium or molybdenum ) 166 to form the double - layered reflective layer , a mixed solution with a ceric ammonium nitrate solution and nitric acid is used as an etching solution . in this fourth embodiment of the present invention , the first layer 166 should be thick enough to protect the transparent conductive material therebelow from the mixed etching solution for the second layer 168 . namely , the first layer 166 prevents the etching solution for the second layer 168 from affecting the transparent electrode 119 a , gate pad terminal 165 and data pad terminal 167 . the first layer 166 formed of cr or mo does not cause galvanic corrosion with the transparent conductive material ( e . g ., ito or izo ), thereby not deteriorating the electrode 119 a and terminals 165 and 167 formed of transparent conductive material when etching the first layer 166 . accordingly , since the first layer 166 and the second layer 168 are etched respectively in the fourth embodiment of the present invention , galvanic corrosion does not occur between the aluminum - based layer 168 and the layers formed of transparent conductive material . furthermore , although chromium and molybdenum are mentioned for the first layer 166 in this reference , other metal layers that do not corrosively reacts with the transparent conductive material can be employed as a first layer 166 . [ 0094 ] fig1 c , 17c and 18 c are cross - sectional views showing an array substrate according to the present invention after forming the double - layered reflective electrode 166 a and 168 a . in accordance with the fourth embodiment of the present invention , since the double - layered reflective electrode 166 a and 168 a is formed on and contacts the transparent electrode 119 a , some additional processes may be required . namely , the processes for removing the defects may be necessary because the electrons may be trapped in the interface between the transparent electrode 119 and the first layer 166 a of the reflective electrode and these trapped electrons cause the defects . in order to overcome this problem , the transparent electrode 119 a is laser - treated to improve electrical and optical characteristics thereof . although the reflective electrode has the double - layered structure in the fourth embodiment of the present invention , a single - layered structure can be employed in the reflective electrode . at this point , the reflective electrode is relatively thicker than the conventional art , and a dry etching method is used for patterning the thick reflective electrode . namely , the opaque metal having high reflectance is deposited on the transparent electrode , and then the photolithography process proceeds using a photo resist . at this time , half of the thick opaque metal layer , which is exposed for etching , is removed by the dry etching method . thereafter , the photo resist patterned for the reflective electrode is stripped completely . although the wet stripper for the photo resist is an electrolytic solution , the transparent electrode and pad terminals are not affected by this wet stripper because half - etched opaque metal layer covers the transparent electrode and pad terminals . after stripping the photo resist , the half - etched opaque metal layer is removed using the dry etching method . at this time , a portion of the opaque metal layer where the photo resist pattern remained becomes the reflective electrode . although the portion for reflective electrode is half - etched , this properly functions as a reflective electrode . in the fourth embodiment of the present invention , the second passivation layer is not formed on the patterned transparent conductive material , and the reflective electrode is directly disposed on the transparent electrode . since the second passivation layer is omitted , the manufacturing processes are reduced in the fourth embodiment . additionally , although the reflective electrode is formed on the surface of the transparent electrode , galvanic corrosion does not occur in the fourth embodiment of the present invention . it will be apparent to those skilled in the art that various modifications and variation can be made in the method of manufacturing a thin film transistor of the present invention without departing from the spirit or scope of the invention . thus , it is intended that the present invention cover the modifications and variations of this invention provided they come within the scope of the appended claims and their equivalents .