fast temperature switching between a stress condition and a test condition of a device under test ( dut ) accelerates a degradation mechanism of the dut to be in - line monitored during the stress condition and then “ freezes ” or halts the degradation during the test condition to avoid recovery . a test of bias temperature instability ( bti ) stress of the dut can thereby be conducted at elevated temperatures to accelerate shift , while a subsequent test can be carried out at lower temperatures to capture real bti induced shift before significant recovery occurs . the methodology and structures for achieving this enables convenient and fast temperature changes during in - line testing so that general characterization of temperature - dependent device properties can be implemented . normally , as an example , testing of an in - line bti mechanism of the dut involves increasing a chuck temperature of a chuck on which the dut is situated to a stress condition and holding the chuck temperature in that stress condition . the chuck temperature is typically about 85 ° c . or above in order to accelerate degradation of the dut . after the chuck temperature is stabilized , which usually requires about 30 minutes , the dut is biased at a stress point for a period of time , which is typically about 10 seconds or more . the biasing may refer to application of a stress voltage to the dut . after the stress period , voltage is lowered to and stabilized at a test point before the first test data is taken . this may occur within about 1 second . the set of tests to be conducted may include several drain - current versus gate - voltage curves at various bias conditions at each node , and the complete test sequence usually takes more than a few seconds in order to fully characterize the bti - induced shifts in device parametrics . in any case , the chuck temperature stays at the elevated stress temperature even during the test sequence . therefore , the results only represent those of a recovered device and do not reflect the real degradation of the dut . in an example , there may be about 50 % recovery after a mere one second delay in a test . with reference to fig1 , a new test methodology is provided . here , the chuck temperature is maintained at or about room temperature or even lower , while the elevated stress temperature is achieved by an embedded on - chip local heating element that is located proximate to or adjacent to the dut . the local heater can be formed of resistive elements , such as doped polysilicon strips , diffusion resistors , or back - end - of - line ( beol ) tan resistors , which can provide over 100 ° c . of localized heating . a degree of the localized heating may be a function of the power applied to the local heating element , which can be tailored by tuning the supply power to achieve a wide range of temperatures for various stress and test conditions . the time needed to reach the designated temperature with the local heater is on the order of milli - seconds ( msec ). as such , since the local heating can be eliminated substantially immediately once the local heater is powered off , an in - line test condition following a stress condition can be conducted with relatively high resolution in both time and temperature . this also allows for accurate results to be achieved before relaxation occurs . in particular , as shown in fig1 , the local heater heats the dut to the local stress temperature , t local — stress , while a voltage v stress is applied to the dut during the stress condition time . at the initiation of the test condition , the local heater is powered off and the local temperature immediately returns to the chuck temperature , t local — test , while the applied voltage is reduced to v test . at this point , degradation measurement of the dut begins with , e . g ., a measurement of the change in drain current through the dut , δid . since local temperature control may be independent of a voltage / current bias , a wide variety of temperature / bias stress and test conditions can be carried out . for example , fig2 shows another stress / test sequence with a relatively low - temperature t 0 test on a fresh device added before the stress procedure . in sequence of fig2 , a methodology similar to that of fig1 is preceded by an initial condition during t 0 when the local temperature is t chuck and the applied voltage is v test . as shown in fig3 , another sequence may be characterized as a relatively high - temperature ac stress condition followed by low - temperature test condition . in another case , shown in fig4 , the sequence is characterized as thermal cycle stress conditions with intermediate characterization of a resistance change , δr , at a relatively low temperature . in yet another case , the sequence is characterized as a general in - line device characterization of temperature - dependent device properties , as shown in fig5 , where the measurement of the driving current as a function of temperature , ion ( t ), of the dut is taken . with reference to fig6 a and 6b , a structure 60 or apparatus to implement the in - line test methodology is shown . in the structure 60 , a dut 61 ( i . e ., device a ) is surrounded by a local heater 62 , such as diffusion resistors or some other suitable devices , and is enclosed by a thermal insulator 63 to increase the heating efficiency . the thermal insulator 63 may be , for example , a shallow - trench isolation sti , airgaps defined around the dut 61 and / or buried oxides ( box ) positioned underneath the dut 61 in silicon - on - insulator soi technologies . a temperature - sensing unit 64 , such as a resistor , a metal wire , a diode or some other suitable device , can be added proximate to or adjacent the dut 61 within the local heater 62 to monitor a temperature inside a region of interest . other characteristics of dut 61 , such as changes in drain current , changes in resistance or changes in driving current , may be determined by external test equipments through probing pads connected to dut 61 . as shown in fig6 b , a probing unit 67 is disposed proximate to the dut 61 to connect to external test equipments for conducting the testing of the dut 61 . as shown in fig7 , a method of conducting an in - line test using the structure of fig6 a and 6b may include setting a chuck temperature t at operation 700 . subsequently , a variable n is set to 1 ( operation 710 ), a local temperature is adjusted by way of the local heater 62 ( operation 720 ) and the local temperature is checked by way of the temperature sensing unit 64 ( operation 730 ). if the local temperature is determined to not be within predefined parameters ( operation 740 ), control returns to operation 720 by way of first loop 741 . if , on the other hand , the local temperature is determined to be within the predefined parameters at operation 740 , bias is applied to the dut 61 for the nth stress test ( operation 750 ). device parameters , such as drain current , resistance and driving current , are then measured at time t ( n ) ( operation 760 ). the variable n is then set to n + 1 ( operation 770 ) and control returns to operation 710 along loop 771 . with reference to fig8 , to further increase a sensitivity of the in - line test in characterizing temperature - dependent device properties , a reference dut 65 ( i . e ., device b ) can be added in the outside of the heating area which stays at chuck temperature throughout the measurement . the test nodes from the dut 61 , such as a drain of a mosfet , an anode of a resistor , etc ., and that from the reference dut 65 are fed into a differential amplifier 66 to determine the differentials between the dut 61 and the reference dut 65 . therefore , the temperature - dependent device properties can be characterized relative to the reference dut 65 with relatively improved accuracy . as shown in fig6 a , the reference dut 65 can be included within the thermal insulator 63 and used for comparison measurements relative to those of the dut 61 without the aid of the differential amplifier 66 . as shown in fig9 , a method of conducting an in - line test using the structure of fig8 may include setting a chuck temperature t at operation 900 . subsequently , a variable n is set to 1 ( operation 910 ), a local temperature is adjusted by way of the local heater 62 ( operation 920 ) and the local temperature is checked by way of the temperature sensing unit 64 ( operation 930 ). if the local temperature is determined to not be within predefined parameters ( operation 940 ), control returns to operation 920 by way of first loop 941 . if , on the other hand , the local temperature is determined to be within the predefined parameters at operation 940 , bias is applied to the dut 61 and the reference dut 65 for the nth stress test ( operation 950 ). device parameters for the dut 61 and the reference dut 65 , such as drain current , resistance and driving current , are then measured at time t ( n ) ( operation 960 ) and the measurements are compared ( operation 965 ). the variable n is then set to n + 1 ( operation 970 ) and control returns to operation 710 along loop 971 . while the disclosure has been described with reference to exemplary embodiments , it will be understood by those skilled in the art that various changes may be made and equivalents may be substituted for elements thereof without departing from the scope of the disclosure . in addition , many modifications may be made to adapt a particular situation or material to the teachings of the disclosure without departing from the essential scope thereof . therefore , it is intended that the disclosure not be limited to the particular exemplary embodiment disclosed as the best mode contemplated for carrying out this disclosure , but that the disclosure will include all embodiments falling within the scope of the appended claims .