as shown in fig1 , a vertical led has a substrate 10 ( typically cu , cuw alloy , mo , cumo alloy , silicon , gaas or ge ). over the substrate 10 , a transition metal multi - layer 12 , a p - gan layer 14 , an mqw layer 16 , a n - gan layer 18 are then formed . the n - electrode 20 and the p - electrode 22 are then formed on selected areas as electrodes . the balls 7 can be placed above the n - gan layer 18 to make the smooth n - gan surface become effectively rough to extract more light without the complicated process of chemical etching the n - gan surface . fig2 a shows in more details a light extracting ball 7 . the ball 7 rests on an interface between an ito layer and a p - gan layer of the led . the balls 7 create an effective rough surface on gan to extract more light from interior . in one implementation , the ball 6 is a sub - micron sphere with a radius of approximately 30 nm ˜ 1 um . the ball dimension is selected to optimally scatter light at approximately ½λ . the balls can be polymer spheres similar to those currently used for calibration of sem equipment . in another implementation , the refractive index of the ball 7 is approximately 2 . 0 - 3 . suitable materials for the ball include : tio 2 , ta 2 o 5 , zro , zno , hfo 2 , gan , aln , znse , and sio x n y , for example . various coating methods can be used to spread spheres on gan surface . the sphere density can be controlled and optimized for the trade - off between the brightness and the electrical properties ( vf & amp ; ir ). for example , as coating density increases , the led brightness and vf increase . with the ball 7 , the light output can be enhanced by more than 30 % compared with the conventional led structure . the plurality of balls 7 forms an internal light extracting element ( lee ) array . the internal lee arrays are also formed to provide a spatially varying index of refraction . the lee array is formed during the led growth process and once the array is formed the remaining layers of the led structure are grown over the array by an epitaxial deposition technique to embed the lee array within the led . light rays that would otherwise be trapped in the epitaxial layers or substrate can interact with the lee array to scatter rays that can escape the led . fig2 a 1 shows light reflection effect when the ball is deposited on the wafer . when light exits the gan layer through a transparent or semi - transparent coat 9 , the light experiences total reflection at the empty regions and is scattered when the light encounters the ball which provides index matching . fig2 a 2 shows the same effect , even when the coat 9 is not present . as shown in fig2 b , the plurality of balls 7 is coated directly above the top gan layer of ether p - gan or n - gan and integrated as a part of epi - wafer by wet method such as spin coating and spray coating with the ball powders dissolved and dispersed into the organic or aqueous solution preliminary . the alternative is to use dry process like electrostatic powder coating or other transport method by air and gas . besides , these balls can be optionally used as the mask for rie to make the gan surface rougher to enhance the extraction efficiency further . fig3 shows a multi - layer epitaxial structure of an exemplary ingan led formed on a carrier , which can be a sapphire substrate in one embodiment . the multi - layer epitaxial structure formed above the sapphire substrate includes an n - gan based layer 42 , an mqw active layer 44 and a contact layer 46 . the n - gan based layer 42 may be a doped n - gan based layer , such as one doped with si for electricity conduction , having a thickness of 2 - 6 microns , for example . the mqw active layer 44 can be an ingan / gan mqw active layer . once electric power is fed between the n - gan based layer 42 and the contact layer 46 , the mqw active layer 44 may be excited and thus generates light . the produced light can have a wavelength between 250 nm to 600 nm . the p - layer can be a p + - gan based layer , such as a p + - gan , a p + - ingan or a p + - alingan layer and the thickness thereof may be between 0 . 05 - 0 . 5 microns . a mesa definition process is performed and p - type reflecting contacts 48 are formed above the contact layer 46 . the reflecting contacts 48 can be ag , al , ito / ag , ito , al , rh , pd , ni / au , among others . balls 7 are positioned above the n - gan layer 42 . then the transparent contact layer 40 such as ito or ni / au is deposited to cover the balls 7 and get a good current spreading and light extraction . a passivation layer 50 is deposited and adhesion metal deposition is performed to form a reflective metal 52 such as ti and cr , among others , in a window etched above the passivation layer 50 . the passivation layer 50 is non - conductive . the adhesion metal 52 forms a contact surface , and a metal carrier layer 60 is coated thereon . a thin metal layer ( cr , cr / au , ni / au among others ) is coated over the structure to serve as an electrode in the electroplating process . however the coating operation is not needed if an electroless process , sputtering or magneto - sputtering process is used in lieu of electroplating . the multi - layer epitaxial structure is coated with a metal plating layer 60 using techniques such as electroplating and electroless - plating . with electroless - plating , the sapphire substrate is protected using a polyimide layer or a coating that can be easily removed without damaging the sapphire or the electroless plated metal of a relatively thick metal such as ni or cu , among others . next , the sapphire substrate is removed . an n - type electrode 70 is patterned on the top of n - gan layer 42 to complete the vertical led . fig4 shows a picture of an exemplary led with light extraction balls . by coating the refractive index - matching particles such as tio 2 balls , the gan surface is effectively roughened and the light can be extracted efficiently . this efficiency is due to the better matching of the refractive index , which for gan is about 2 . 4 and for tio 2 is about 2 . 5 . although the present invention has been described in considerable detail with reference to certain preferred embodiments thereof , other versions are possible . in alternative embodiment , the surface of the gan layer is roughened using balls / spheres or using wet / dry etching techniques . other led configurations utilizing the lee arrays can also be envisioned by one skilled in the art . the new led can have different combinations of lee arrays and disperser layer . lees can have different shapes , sizes , spaces between adjacent lee , and can be placed in different locations . similarly , the disperser layers can be made of different material and placed in different location . therefore , the spirit and scope of the appended claims should not be limited to the preferred embodiments described above .