as shown in fig1 , according to embodiment 1 of the present invention , a wafer level chip size package for mems devices includes a substrate wafer 20 , a cap substrate 5 , a cushion layer 25 , a layer of redistribution leads 30 , solder mask 35 and a plurality of solder bumps 40 . the substrate wafer 20 has formed thereon mems dies formed with certain mems structures , such as gears , hinges , slides , etc . there are also electrical terminals , preferably in the form of so called compatible pads 15 disposed at the periphery of each of the mems dies on the substrate wafer 20 . the cap substrate 5 has cavities which can be filled in inert gas with a certain pressure . the cap substrate 5 includes cavity walls 10 by which the cap substrate 5 is combined with the substrate wafer 20 , each of the mems dies being encased within a corresponding cavity . preferably though not necessarily , the depth of cavities is within the approximate range of 300 - 400 um , the thickness of cavity walls 10 is within the approximate range of 10 - 40 um . the cushion layer 25 is disposed over a non - active surface of the substrate wafer 20 , while leaving portions of the compatible pads 15 exposed . the layer of redistribution leads is disposed over portions of the cushion layer 25 and the exposed compatible pads 15 . the solder mask 35 is disposed on the redistribution leads , while leaving portions of the redistribution leads exposed . preferably though not necessarily , the solder mask 35 is formed of photo sensitive thermoplastic polymer such as bcb , polyimide and epoxy etc . the solder bumps 40 are formed on exposed portions of the redistribution leads , each solder bump 40 corresponding to a compatible pad 15 . preferably though not necessarily , the solder bumps 40 are formed of lead - free solder paste . there are two optional methods to form cavity walls 10 . one is to spin coat photosensitive bcb on flat cap substrate so as to form cavity walls by lithography . bcb is capable to endure koh , so in this case , bcb is utilized as a mask for wet etching when forming the cavity . the other one is to etch the cap substrate to form cavities first , then screen print glass frit on etched cap substrate to form cavity walls . according to embodiment 1 of the present invention , an exemplary process flow of forming the wafer level chip size package for mems devices is illustrated from fig4 to fig1 . as illustrated in fig4 , spin coat bcb on a cap substrate 5 at first , then form cavity walls 10 by lithography , the position of each cavity wall 10 is corresponding to that of the substrate wafer 20 . the cap substrate 5 is formed of materials with a proper value of cte and should be easy to be etched , such as silicon or glass . as illustrated in fig5 , form cavities on the cap substrate 5 by wet etching or plasma etching ; utilize the cavity walls 10 as a mask so that the position of each cavity corresponds to that of the substrate wafer 20 . particularly , if gas filling is not required , this step can be skipped . as illustrated in fig6 , align the substrate wafer 20 with the cap substrate 5 and apply pressure to achieve bonding . each cavity wall 10 will be pressed onto the compatible pads 15 and the mems structure is inside of the cavity . during bonding , air can be pumped out to get high vacuum and inertia gas can be filled in for certain applications . as illustrated in fig7 , thin the substrate wafer 20 by backside grinding , notch it by special blade with certain angle to remove most of the silicon at the scribe lines . preferably though not necessarily , the thickness of remaining silicon is around 10 um . as illustrated in fig8 , plasma etch at the backside of the substrate wafer 20 to remove the rest silicon and expose part of the compatible pads 15 . as illustrated in fig9 , fill the trench with insulating materials to cover the silicon and the exposed compatible pads 15 . spin coat this insulating material on the backside of the substrate wafer as a cushion layer 25 . as illustrated in fig1 , notch again to expose the flank of the compatible pads 15 . particularly , if the cap substrate 5 is made of electric material such as silicon , the blade cannot cut into the cavity wall 10 otherwise the substrate wafer will be connected electrically to the cap substrate 5 . as illustrated in fig1 , deposit a metal layer on the backside of the substrate wafer 20 by sputtering . preferably though not necessarily , this metal layer is al . as illustrated in fig1 , form redistribution leads 30 by lithography and well known ubm ( under bump metallization ) technique . as illustrated in fig1 , spin coat a photo sensitive solder mask 35 to cover the redistribution leads 30 , make openings by lithography for solder bump planting . as illustrated in fig1 , plant solder bumps 40 at the openings of the solder mask 35 by screen printing , each solder bump 40 corresponding to a compatible pad 15 . as an end of the process , after all the above steps , dice the substrate wafer 20 along the scribe lines to singulate the mems dies therefrom . preferably though not necessarily , this process flow may also include the following steps : before cavity formation , make one pair of alignment marks at the backside of the cap substrate 5 by lithography , the alignment of cavity formation ( expose ) and bonding will be according with these marks ; before the first notch , spin coat photo resist on the non - active surface of the substrate wafer 20 and make photo resist openings at the positions corresponding to those of the compatible pads 15 by backside align system or ir align system . the first notch will then be aligned according to these openings and the photo resist will be utilized as a mask for etching which is the following step of the first notch . preferably though not necessarily , the type of photo resist for these two steps is positive , the gases for etching are fluorocarbon or sulfur - fluoride . according to embodiment 2 of the present invention , instead of the steps illustrated in fig4 and fig5 , an alternative method of forming the cavity walls 10 is illustrated from fig1 to fig1 . as illustrated in fig1 , deposit a passivation layer 45 on the front side of the cap substrate 5 by pecvd ( plasma enhanced chemical vapor deposition ), spin coat photo resist 50 on the passivation layer 45 , make pattern by lithography , the area which need not to be etched should be covered by photo resist 50 . as illustrated in fig1 , plasma etch at the front side of the cap substrate , the photo resist 50 will protect the passivation layer 45 from being etched while the exposed passivation layer 45 will be etched . after etching , strip the photo resist 50 , the pattern of the passivation layer 45 is the same as that of the photo resist 50 . as illustrated in fig1 , make cavities on the cap substrate 5 by wet etching or dry etching , utilize the passivation layer 45 as a mask so that the position of each cavity corresponds to that of the mems die . as illustrated in fig1 , screen print glass frit on the cap substrate 5 as cavity walls 10 . the subsequent steps are the same as those in embodiment 1 which are illustrated from fig6 to fig1 . particularly , if gas filling is not required , the steps described from fig1 to fig1 can be skipped . preferably though not necessarily , this process flow may also include the following steps : before cavity formation , make one pair of alignment marks at the backside of the cap substrate 5 by lithography , the alignment of cavity formation ( expose ) and bonding will be according to these marks ; with reference to the marks at the backside , making another pair of alignment marks at frontside of the cap substrate 5 by lithography , so that the screen print will be aligned according to these marks ; before the first notch , spin coat photo resist on the backside of the substrate wafer 20 and make photo resist openings at the positions corresponding to those of the compatible pads 15 by backside align system or ir align system . the first notch will then be aligned according to these openings and the photo resist will be utilized as a mask for etching which is the following step of the first notch . preferably though not necessarily , the type of photo resist for these two steps is positive , the gases for etching are fluorocarbon or sulfur - fluoride . in summary , an improved wafer level chip size package for mems devices and method for fabricating the same has been provided . the first process utilize photo sensitive bcb to form cavity walls which will protect the cap substrate 5 from being etched when forming cavities and the bcb bonding results in a hermetic enclosure . alternatively , screen print glass frit on etched substrate and utilize it as cavity walls . the glass frit bonding also realizes a hermetic enclosure . the innovative solution of removing most of the silicon by the first notch before plasma etching effectively solves the difficulty of etching which is induced by the thick silicon . this packaging method provides a well packed device with the size much closely to the original one , making it possible to package the whole wafer at the same time and therefore , saves the cost and cycle time . although this invention has been described in connection with specific forms and embodiments thereof , it will be appreciated that various modification may be made from the specific details described here in without departing form the spirit or scope of the invention as set forth in the appended claims .