referring now to the drawings , and more particularly to fig1 , a cross sectional diagram is shown illustrating a triple well esd structure according to the teachings of a preferred embodiment of the present invention . more specifically , the esd structure includes an insulator region 2 defining n doped regions 3 and 3 a , an insulator region 4 defining a p doped region 5 , a p - doped region 6 , n doped region 8 , and contacts 12 and 14 . regions 2 and 4 can be , for example , a shallow trench isolation ( sti ) region . in the preferred embodiment , regions 3 and 3 a are n doped and extend down to n doped region 8 , and form a ring so as to isolate the p − doped region 6 from the substrate region 10 . regions 3 and 3 a can be , for example , an n well implant , a reach - though implant or any other known doping process that allows the dopants to extend below insulation region 2 and connection to n doped region 8 . although not shown , regions 3 and 3 a can have insulation in the other dimension leading to the isolation of region 6 . in addition , regions 3 and 3 a can be formed using a single implant or a plurality of implants of different energies or doses . region 6 is p − doped to allow isolation from the substrate region 10 . in this embodiment , a p - n diode metallurgical junction is formed where the p − region 6 abuts region 3 , region 3 a and region 8 . this metallurgical junction in this embodiment forms a diode for the application of the esd protection . the anode structure of the p - n diode is formed using regions 5 and 6 where region 5 typically has a higher doping concentration as compared to region 6 so that region 5 forms a contact for electrical connection 12 . the anode region can be electrically connected to an input pad of a circuit to provide esd protection . the cathode structure of the p - n diode is formed from regions 3 , 3 a , and region 8 . electrical connection to the cathode is established by electrical connection 14 . the cathode structure can be connected to a vdd power supply at electrical connection 14 to provide esd discharge current flow to the vdd power supply . the metallurgical junction formed between region 3 , 3 a and region 8 and the substrate 10 also forms a second p - n junction which can be used for esd protection . connecting regions 3 , 3 a and 8 to an input pad via electrical connection 14 and grounding the chip substrate region 10 , an esd diode can be established for negative electrical discharges . reference now being made to fig2 , a cross sectional diagram is shown of a second preferred embodiment for a triple well diode according to the teachings of the present invention . fig2 is similar in structure to fig1 with the addition of a plurality of anode structures located within the cathode . more specifically , fig2 represents the diode of fig1 modified to include an additional p + anode region 5 a , p − anode region 6 a , n +/ n − well region 3 b , and lower n band 8 a . the advantage of this structure is that the local placement of 3 , 3 a and 3 b allows for a low resistance cathode structure to avoid resistive regions 8 and 8 a . regions 8 and 8 a can be one continuous n - band ( not shown ) or a plurality of regions which are connected by n +/ n − well regions 3 , 3 a , and 3 b . additionally , this implementation lends itself to a multiple anode structure contained in a common anode region . in this embodiment , the cathode - to - substrate region can also serve as a diode for esd discharging to the substrate 10 . additionally , the vertical pnp can play a role in the electrical discharge to the substrate formed from the p +/ p − emitter , the n - band base and p - substrate collector . reference now being made to fig3 , a cross sectional diagram is shown illustrating a triple well diode according to the teachings of an alternative preferred embodiment of the present invention . in this embodiment n + regions 16 and 16 a are defined by isolation regions adjacent to the region 5 . electrical connections 18 and 18 a are connected to regions 16 and 16 a . electrical connections 18 and 18 a can be the same electrical connection of the well and n - band region 14 . in this case , the p - n junction formed between p − region 6 and the n - regions 16 and 16 a will provide a lateral current path which is parallel to the p - n junction formed between region 6 and regions 3 , 3 a and 8 . in this embodiment , the capacitance of the structure is higher but allows for lateral discharge of the esd current from the region 6 to regions 16 and 16 a . in an alternative circuit configuration , electrical connections 18 and 18 a can be connected to a second power supply vdd 2 . in this fashion , the esd network can be electrically connected from a single input with a discharge path from the input pad to a first and second power supply . in yet another alternative circuit configuration , the electrical connections 18 and 18 a can be connected to an input node , and the electrical connection 12 can be connected to a ground potential . the electrical connection 12 can be at the same potential of substrate region 10 or a second ground potential . in this configuration , the triple well structure can be used for electrical discharge for negative esd pulses to multiple ground rails from a common input pad connection . additionally , the diode structure represented by fig3 can be used as a npn bipolar esd structure where region 16 and 16 a are the emitter , the p - region 6 is the base region , and the n - well / n - band structure 8 can serve as the collector structure . the emitter and collector of the implementation can also be reversed whereas the region 16 and 16 a can serve as the collector and the region 8 can serve as the emitter . in the configuration illustrated in fig3 , the n well / n band regions 3 , 3 a and 8 can be placed to a higher voltage power supply in order to avoid current flow to these regions during overshoot or undershoot operation . it is also possible to allow for the n regions 16 and 16 a to be connected to the higher power supply voltage . in this fashion , undesirable noise injection can be collected at an electrode which does not allow the noise injection to enter a power rail which is to be kept free from noise injection . the structural layout of fig3 could be modified to include a plurality of p regions 5 , and n - regions 16 and 16 a could be contained within the region 6 . in this fashion , a multi - finger structure can be formed to allow for isolation of the entire structure within regions 3 , 3 a and 8 . reference now being made to fig4 , a cross sectional diagram is shown illustrating an alternative embodiment of a triple well mixed voltage interface esd structure formed from the triple well diode elements of fig1 according to the teachings of the present invention . in this embodiment , each triple well diode structure has their well / n = 31 band region spatially separated and independent of the adjacent structure in the substrate region 10 . for mixed voltage applications , when an incoming signal is above the native power supply voltage of a product chip , an esd structure must be designed to allow for the incoming signal to allow forward biasing of a given esd diode structure . by connecting the diode structures such as those discussed in fig1 , fig2 , and fig3 in a series manner , forward biasing of the triple well diode element structure can be avoided by forming a plurality of these structures such that the anode of the first structure is connected to the input pad , and whose cathode is connected to a second structure &# 39 ; s anode region , ad infinitum . in this fashion , a series of diode structures are connected to prevent forward biasing of the diodes until the input voltage exceeds the turn - on voltage of the series of elements plus the native power supply voltage . for example , using a diode structure such as that shown in fig1 , a series of elements can be put into a series configuration . in this case , the input pad would be connected to electrical connection 12 and whose output is connection 14 for the first triple well diode element . the cathode electrical connection 14 of the first triple well element is connected to a second triple well element anode element 12 a . this forms a plurality of elements , where they are all contained within the same substrate region 10 . the last triple well diode element 14 a is connected to a power supply ( e . g . vdd ). in this fashion , the isolation structure which is formed from the n well and band regions has the utility as serving as a cathode contained within the triple well mixed voltage esd network . reference now being made to fig5 , a cross sectional diagram is shown illustrating an interface esd structure formed from triple well diode elements of fig3 according to the teachings of the present invention . using the diode structure of fig3 , a plurality of diode elements can be put into a series configuration where again each n well / n − band region 8 is separated and not abutting the adjacent elements . in this case , the input pad would be connected to electrical connection 12 and whose output is connection 18 and 18 a for the first triple well diode element . the output of 18 and 18 a are then connected to the anode of the second triple well diode element 12 a . in this fashion , the electrical connection 14 can be connected to a high voltage power supply whose voltage is above the input voltage . in this configuration , the n well / n − band structure 8 serves a means of discharge directly to a second power supply instead of through the plurality of triple well diode elements in series . each triple well diode structure can have an independent electrical connection to a independent power supply or a plurality of power supplies . given a plurality of triple well diode structures , the independent n - well / n - band regions can be connected to different power supplies different from the power supply connection of the last triple well diode element in the string . the advantage of this implementation is that electrical discharge current can flow to multiple power supplies and noise can be distributed to different supplies . in an alternative electrical connection , the electrode 14 can be connected to connection 18 and 18 a , and 14 a can be connected to 18 b and 18 c allowing parallel discharge paths through the esd network . in this fashion current flowing from the anode is discharged to both metallurgical junctions . the advantage of this connection is that all the esd current will flow through the structure . reference now being made to fig6 , a cross sectional diagram is shown illustrating a mixed voltage interface triple well esd network where the n well / n − band regions are merged as a single region according to the teachings of the present invention . in this embodiment , the input can be connected to electrical connection 12 serving as an anode region . the cathode is connected to electrical connections 18 and 18 a which are connected to the second anode of the second stage 12 a . the cathode of the second stage diode is 18 b and 18 c which are connected to a power supply . the isolation region 14 consisting of the n - well and n - band region cannot be connected to the power supply vdd directly as the current will be one diode voltage from the power supply . this will lead to diode turn - on prior to the mixed voltage condition . the advantage of merging the triple diode successive stages is the density advantage by avoiding the band - to - band isolation rules . hence , a denser design can be constructed by merging the successive stages . reference now being made to fig7 , a cross sectional diagram is shown illustrating a mixed voltage interface triple well diode esd network which provides a separate first diode stage followed by a merging of all successive diode stages according to the teachings of the present invention . the disadvantage of the embodiment in fig6 is that utilization of the n - well / n - band region for esd discharge is eliminated and only lateral discharge current paths are provided to the vdd power supply . as a result , a structure which allows discharge to the first triple well diode stage which is independent of the merged isolation band diode regions has both the esd advantage for the first stage , and the density advantage of all successive stages . additionally , given a plurality of independent circuits , the successive stages of the triple well diode structure can be shared across circuits for esd and density advantages . experimental results have shown a 4 × area saving and a 3 × esd improvement in the sharing of successive diode stages . hence using a diode structure such as those shown in fig1 , 2 and 3 as a first triple well diode stage whose anode is connected to an input pad , and whose cathode is connected to a anode of the merged triple well diode isolation region , as shown in fig6 , a new embodiment having the esd and density advantages are established . the input is connected to electrode 22 . the cathode of the first stage is electrical connection 23 which is connected to the anode of the second stage . the cathode of the second stage 24 is connected to the anode of the third stage . the cathode of the third stage 25 is connected to additional stages or a power supply voltage . the n well / n - band region 26 is connected to the same power supply , a reference voltage or an independent power supply . reference now being made to fig8 , a schematic diagram is shown illustrating a circuit implementation of the triple well diode structure of fig1 according to the teachings of the present invention . more specifically , two triple well diode structures 30 and 32 as discussed in fig1 , are shown . in this embodiment , the anode is a p region 5 and the cathode is a n - band / n well region 8 or other n - doped region 3 / 3 a . the first triple well esd diode structure 30 has its p / p + anode 5 connected to an input pad 31 , and the cathode 3 / 3 a connected to a power supply vdd . a second triple well esd diode structure 32 is connected to the input pad 31 . in this case the n - band / n - well structure 8 can be connected to the input pad 31 , and the substrate is the second electrode . a second orientation is where the input pad 31 is connected to the n - band / n - well structure 8 and the p + anode region is grounded . in this fashion , esd current is discharged for negative undershoot or negative pulses . reference now being made to fig9 , a schematic diagram is shown illustrating an electrostatic discharge circuit using the triple well structure of fig3 according to the teachings of the present invention . in this case two triple well esd structures 90 and 92 are used . the first triple well esd diode structure 90 has its p + anode 5 connected to an input pad 31 and a first cathode and second cathode where the first cathode is the n - band / n - well cathode structure 8 and the second is a n + implant 3 as shown in fig3 . in this fashion , the first or second cathode can be connected to the same or different power supplies . a second triple well esd diode structure 92 is connected to the input pad 31 . in this case , the n - band / n - well structure 8 can be connected to the input pad 31 , and the substrate 10 is the second electrode . a different orientation can be configured where the input pad 31 is connected to the n - band / n - well structure 8 , and the p + anode region 5 is grounded . in this orientation , esd current is discharged for negative undershoot or negative pulses . additionally , using the structure in fig3 , the n + diffusion 3 can be connected to the input pad 31 , and the isolated p − region 6 can be connected to the substrate 10 or a second ground electrode . in this configuration , a first and second n - region can provide esd protection for negative esd pulse events . additionally , the n + region can serve as a npn bipolar element where the n + region is the emitter and the n - band / n - well region 8 serves as a collector . various modifications may be made to the structures of the invention as set forth above without departing from the spirit and scope of the present invention as described and claimed . the spirit of the invention would allow for alternative diode and bipolar structures which are present in rf cmos technology , bicmos technology , bicmos silicon germanium , bicmos silicon germanium carbon , and silicon on insulator ( soi ) technology . in bicmos technology , epitaxial regions can be deposited on the silicon surface to provide a p - type anode structure . using selective epitaxial deposition techniques , silicon anode structures can be formed above the surface as shown in fig1 to fig7 . in this fashion , the spirit of the triple well esd structure can be fulfilled and combined and / or modified to achieve the utility of the present invention . this epitaxial film can contain silicon , germanium or carbon atoms to form the epitaxial region . in the spirit of the present invention , schottky diodes , mott diodes , and zener diodes can be formed for the anode structure to fulfill the utility of the present invention and may be combined and / or modified . various aspects of the embodiments described above may be combined and / or modified . in the present invention , the electrical circuits and series configurations can be connected between two power supplies of a common voltage , two power supplies of different voltage , between a ground and power supply rail and between two ground rails . a plurality of these structure can be used in combination and permutation between system power rails or system on a chip design on a common or different substrate .