fig1 illustrates an exemplary embodiment of a cell structure 100 having a substrate with a doped p ++ region 110 , a p − region 120 , and an n ++ region 130 . an anti - reflective coating layer 140 ( ar ) is disposed on the substrate on top of n ++ region 130 , contacts 150 are arranged in a grid via ar layer 140 and in contact with the region 130 . p ++ region 110 has a back surface field 160 and bottom contacts 170 are arranged on the back surface field 160 . in a conventional fabrication process of fabricating solar cells , which may create a structure of solar cell similar but not identical to the one shown in fig1 , an ar layer , similar to ar layer 140 , is disposed on a cell substrate at a thickness x with the thickness x meeting the designed specifications for the desired anti - reflective properties of the solar cell structure . a silver paste ( ag ) is then disposed on the ar layer to define a contact grid similar to the contacts 150 . once the ag paste dries , the structure is subjected to a high temperature annealing process of approximately 900 degrees c . for typically over one hour . the annealing process causes the ag paste to diffuse or penetrate the ar layer underneath and contact the region below , and in the meantime remain at least partially exposed on the top for electrical connections . generally , the time of annealing may be calculated by the equation t 1 =( ar layer thickness ) 2 / d , where d is a coefficient value determined by various other factors . the thickness , which may be denoted by x , is a factor in determining the duration of the annealing process in that a greater x results in a greater annealing process time t 1 , depending on the actual thickness of the ar layer . the exemplary methods described below reduce the annealing process time t . fig2 a - 2f illustrate a cross - sectional view of an exemplary fabrication method of a cell structure 200 according to one embodiment of present invention . referring to fig2 a , a p - type silicon substrate 202 is doped to form an n region 204 . the n region may be an n + region in alternate embodiments , while the p - type substrate 202 may include p − and / or p ++ regions . referring to fig2 b , a first anti - reflective coating layer 206 ( ar layer ) is disposed on the n region 204 . the first anti - reflective coating layer 206 may include for example , a dielectric layer of silicon nitride ( sin y ), a silicon oxide ( sio y )/ sin y combination , or other suitable materials . the first ar layer 206 may be deposited to have a thickness less than the total desired thickness x of the ar layer for the completed cell structure 200 . the total desired thickness x is , for example , between 50 and 100 nm , and is uniquely dependant on , and determined by the refractive index of the ar layer , for example , some factors such as the wavelength of light applied to the solar cell may interact . in one embodiment , for example , the first ar layer 206 may have a thickness of about half the thickness x , that is , ½x . however , embodiments of the present invention may include other thickness as well , that are larger or smaller than ½x . referring to fig2 c , ag paste or other types of paste that are suitable for making contacts for cell structure 200 is disposed on the first ar layer 206 by , for example , a lithographic patterning and deposition process , and dried to define contacts 208 . the paste is disposed on the ar layer 206 , instead of directly on top of n region 204 , to avoid contamination of the n region 204 in the deposition process . referring to fig2 d , a second ar layer 210 is disposed on the first ar layer 206 and the contacts 208 . the second ar layer 210 may have a thickness which , when being combined together with the thickness of the first ar layer 206 , may provide the desired total thickness x , to function as a single ar layer , for the completed cell structure 200 . for example , in one embodiment when the first ar layer 206 has a thickness of ½x , the second ar layer 210 may have a thickness ½x as well to make a total thickness x of ar layers . referring to fig2 e , the structure 200 is heated in an annealing process . the annealing process includes heating the structure to approximately 900 degrees c . or any other suitable temperatures for a time duration t 2 . according to one embodiment of the present invention , since contacts 208 need to be in contact with n region 204 and also be exposed on the top for electrical connection , the annealing may be determined by the larger of time needed to diffuse both first ar layer 206 and second ar layer 210 , and may be calculated by the equation t 2 =( layer thickness ) 2 / d , where d is a coefficient value determined by various other factors . in the above illustrated embodiment , the time t 2 of annealing maybe reduced , compared to t 1 , by making the thickness of first ar layer 206 approximately the same as that of second ar layer 210 , both being equal to approximately ½x . other combinations of thicknesses are also possible , although the reduction in time of annealing will be less . based upon the above equation , the time t 2 for annealing first ar layer 206 ( and second ar layer 210 ) with a thickness of ½x is approximately ¼ of the time t 1 that will otherwise be required to anneal an ar layer of thickness x . the annealing process results in contact 208 material diffusing or penetrating through the first ar layer 206 to contact the n region 204 , and penetrating through the second ar layer 210 in the regions above the contacts 208 . since contact 208 material diffuses into surrounding ar layers , the size of contacts 208 becomes larger , resulting in outer regions 220 of dielectric material , having contact 208 material being diffused therein , that promotes electrical conductivity , as shown in fig2 e . a resultant ar layer 212 comprising the first ar layer 206 and the second ar layer 210 having a combined thickness x is also shown in fig2 e . in the illustrated embodiment , the first and second ar layers 206 and 210 are about the same thickness , however other embodiments may include combinations of ar layers having different thickness ( e . g ., ¼x and ¾x ) above and below contacts 208 . although such an arrangement would still reduce the time t 2 for annealing as discussed above , ar layers with similar thicknesses offer an even larger reduction in annealing time t 2 . referring to fig2 f , a back side contact 214 is formed on the underside of the p - type silicon substrate 202 . the graph 201 illustrates the concentration gradient of contact material in the regions 220 . a slight diffusion of the contact material is also present in the n region 204 , which promotes electrical contact with the n region 204 . the arrow 221 illustrates an example of a conductive path including the region 220 through the second anti - reflective layer 210 ; the contact material 208 ; and the region 220 through the first anti - reflective layer 206 , which contacts the n - region 204 of the substrate . the embodiments illustrated above include the deposition of two ar layers ; however , other embodiments may include the deposition of a plurality of ar layers that will result in a resultant ar layer 212 having a thickness x . the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention . as used herein , the singular forms “ a ”, “ an ” and “ the ” are intended to include the plural forms as well , unless the context clearly indicates otherwise . it will be further understood that the terms “ comprises ” and / or “ comprising ,” when used in this specification , specify the presence of stated features , integers , steps , operations , elements , and / or components , but do not preclude the presence or addition of one ore more other features , integers , steps , operations , element components , and / or groups thereof the corresponding structures , materials , acts , and equivalents of all means or step plus function elements in the claims below are intended to include any structure , material , or act for performing the function in combination with other claimed elements as specifically claimed . the description of the present invention has been presented for purposes of illustration and description , but is not intended to be exhaustive or limited to the invention in the form disclosed . many modifications and variations will be apparent to those of ordinary skill in the art without departing from the scope and spirit of the invention . the embodiment was chosen and described in order to best explain the principles of the invention and the practical application , and to enable others of ordinary skill in the art to understand the invention for various embodiments with various modifications as are suited to the particular use contemplated while the preferred embodiment to the invention had been described , it will be understood that those skilled in the art , both now and in the future , may make various improvements and enhancements which fall within the scope of the claims which follow . these claims should be construed to maintain the proper protection for the invention first described .