the present invention relates to optically - triggered semiconductor - based switches and compact and easily transportable systems , including antennas that incorporate the optically - triggered switch , high power radar systems , and ground penetrating radar systems , among others . in various embodiments , the switches are built with group iii nitride semiconductors , including gallium nitride ( gan ) or aluminum gallium nitride ( algan ) solid state semiconductors . the switches may then be incorporated into megawatt to multiple terawatt class high power systems that are up to 100 to 200 times more powerful than existing power systems of the same size that rely on gaas or silicon based switches and / or other photoconductive switches . similarly , the switches and systems of the present invention may also produce comparable or greater levels of power within a reduced size . referring now to fig1 , an embodiment of the optically - triggered switch 100 having a coplanar configuration is shown . the optically - triggered switch 100 includes a gan wafer 102 consisting of an undoped , intrinsic gan layer 202 having a thickness in a range between about 30 μm and about 2 cm grown on a substrate 200 having a thickness in a range between about 300 μm and about 1 mm , as shown in fig3 . in one embodiment , the gan layer 202 is grown using any suitable method to a thickness of approximately 50 μm on an approximately 300 μm thick conductive gallium nitride ( gan ) substrate 200 . other substrate materials or additional base layers may also be incorporated into the wafer 102 . as shown in fig1 , the optically - triggered switch 100 also includes one or more ground plane electrodes 104 a - b . the optically - triggered switch 100 also includes a central conductor 106 . the central conductor 106 is a microstrip conductor having an impedance in a range between about 0 . 1ω and about 1000ω . preferably , the conductor 106 has an impedance in the range between about 10ω and 200ω . in various embodiments , the central conductor 106 and the ground plane electrodes 104 a - b are spaced to provide a negligible coupling effect . for example , an analysis may be performed to verify the impedance of an input signal by varying the spacing “ d ” between the conductor 106 and the ground plane electrodes 104 a - b while recording the output voltage . in various embodiments , the spacing d may be in a range between about 1 mm and 1 cm . by way of example and not limitation , the spacing d between the conductive contact or conductor 106 and the ground plane electrodes 104 a - b may be carefully tailored to ensure minimal impedance variation in operation , an input signal 108 is applied to the conductive contact 106 while the ground plane electrodes 104 a - b are held at ground potential . when the optically - triggered switch 100 is illuminated by a laser pulse 110 in a laser illumination region 112 , the resistivity of the gan or algan decreases which forms a low - resistance electrical connection between the conductors and ground plan electrodes 104 a - b and 106 . as a result , a portion of the input signal 108 is reflected back to the input and a portion of the input signal is shunted to ground . the optically - triggered switch 100 , therefore provides dual , parallel current paths to ground ( e . g . one to the left ground plane electrode 104 a and one to the right ground plane electrode 104 b ), which decreases the effective channel resistance . in various embodiments , the channel resistance may be reduced to the order of milliohms or micro ohms . fig2 depicts another embodiment of the optically - triggered switch 100 . this embodiment includes an algan wafer 102 that includes multiple conductive contacts 106 and ground plane electrodes 104 a - b . the multiple arrangements 114 of conductors 106 and ground plane electrodes 104 a - b may be isolated or , alternately , in electrical communication with one another so that an input signal 108 at one conductor 16 may be shared across one or more other conductors . as such , an optical signal , including those generated by a laser or other suitable light source , at one of the arrangements 114 may cause the input signal 108 at another arrangement to be shunted to ground . alternately , the optical signal may be used as a floating series electrode . while embodiments of the optically - triggered switch 100 may have a coplanar configuration as shown in fig1 - 2 . a preferred and potentially more practical configuration is a vertical configuration as shown in fig3 , where the switch 100 shorts a conductor 106 on top of the switch through the switch material to a ground plane electrode 104 a - b located on a bottom surface of the switch . the vertical configuration of the switch 100 can be operated in the linear mode or in an avalanche mode . the vertically configured switch 100 may include a substrate and one or more semiconductor layers formed on the substrate . as shown in fig3 , one embodiment of the optically - triggered switch 100 includes a substrate 200 and multiple semiconductor layers 202 - 204 formed on the substrate . the substrate 200 is an n - type doped gan substrate . in one embodiment , the substrate 200 is a si - doped conductive gan wafer approximately 0 . 3 mm thick and approximately 2 inches in diameter . in other embodiments , the gan substrate 200 may be doped by other n - type dopants including , but not limited to , germanium . on top of the substrate 200 , an intrinsic or undoped layer 202 of gan or algan is grown . the top layer of the switch 100 is a p - type doped gan layer 204 . in one embodiment , the top layer 204 is doped with magnesium , while in other embodiments , the dopant may be another p - type dopant , including but not limited to zinc . a mesa structure , as indicated by 206 , is formed in the switch 100 by any suitable process including etching . the optically - triggered switch 100 , as shown in fig1 - 3 may be manufactured using a variety of methods including , but not limited to hydride vapor phase epitaxy ( hvpe ) growth techniques and chemical vapor deposition ( cvd ). the switch 100 may also be produced by depositing electrodes on a grown semiconductor crystal . fig4 illustrates one embodiment of a manufacturing process 300 to produce the optically - triggered switch 100 . the process 300 begins by providing a substrate 200 at 302 . in one embodiment , the substrate 200 is a sigan wafer approximately 1 mm thick and approximately 2 inches in diameter . at 304 , an epitaxial layer 202 of gan is grown on the substrate 200 . the epitaxial layer 202 may be grown by an hvpe process and extrinsically doped to provide an n + doped layer approximately 50 μm thick . at 306 , the epitaxial layer 202 is etched to provide a mesa structure and conductive contacts or electrodes 106 and 104 a - b are bonded to the remaining epitaxial layer at 308 . a passivation layer of silicone oxide ( sio 2 ) 208 is bonded to the switch 100 at 310 and at 312 , another contact 210 is bonded to the substrate 202 opposite the epitaxial layer 204 . the substrate 200 is then bonded to an aln base layer 212 at 314 . at 316 , the switch 100 is exposed to a laser 214 which is used to define a switch channel 216 , as shown at 318 . in various embodiments , the optically - triggered switch 100 is configured for operation in horizontal and / or vertical bulk avalanche modes . in one embodiment , the optically - triggered switch 100 is approximately 1 mm thick and configured as a 10 - 25ω blumlein pulser . the optically - triggered switch 100 may be triggered by any suitable optical source including , but not limited to , a fiber - coupled laser diode . any laser or laser diode with a wavelength compatible with the semiconductor band gap can be used to illuminate the optical switch . the optically - triggered switch 100 has a projected output of approximately 2 . 5 to 5 gw which can be derated by a factor of approximately 4 such that each switch may have a derated output of approximately 1 gw . in various other embodiments , switches that can switch power systems on the order of watts to multiple terawatts can also be fabricated using gan or algan semiconductors . the rise time for various embodiments of the switch 100 is on the order of picoseconds , while the pulse width for the output of the switch 100 may be varied based on the geometry of the switch . sub picosecond rise times may also be achievable . an impedance mismatch with the switch 100 may cause ring down with the switch . in one embodiment , the switch 100 may have approximately 4 - 5 ring down cycles . alternatively , the laser triggered switches can be used in active amplifier circuits such as class e or class d amplifiers to generate high power rf signals . in some embodiments , gan is selected for the epitaxial layer 202 as gan is highly chemically inert and does not require hermetic packaging . in addition , gan has low thermal impedance that helps to prevent heat buildup and a thermal resistance approximately two to three times that of copper , which in turn allows for faster cooling of the switch . in some embodiments , the epitaxial layer 202 of the switch 100 may include algan alone or in combination with gan as both materials show superior optical properties and provide a superior baliga &# 39 ; s figure of merit ( bfom ) as shown in fig5 . the bfom is a geometry - independent comparison of materials for power devices . as shown , gan has a voltage break down that is over ten times greater than that of gaas or silicon . as such , the gan - based switches 100 may achieve a peak power 100 to 200 times higher . moreover , commonly used silicon or silicon - carbide based semiconductor materials are indirect band gap semiconductors and have limited optical amplification . therefore , high power systems using silicon - based semiconductor switches typically require large lasers . conversely , as shown in fig6 a - b , gan , and alternatively algan , have significantly higher optical amplification . due to its direct band gap , gan is suited for avalanche mode switching using reduced laser energies and / or sizes . laser diodes or any other optical source can be used for triggering which is compatible with the band gap of the algan or gan material . one or more of the optically - triggered switches 100 may be arranged into one or more modular arrays configured to provide as much power as desired . for example , the array ( s ) may be configured to provide 0 . 5 to 2 . 0 gw of power or more . fig7 is a block diagram of one embodiment of a compact laser - switched system 400 that includes multiple array modules 402 of the switch 100 . the system 400 also includes an energy storage system 404 . the energy storage system 404 , which may be a generator , a battery , an electrochemical double layer capacitor ( an ultracapacitor ) or other energy storage device . in one embodiment , operating the system 400 in a burst mode may reduce the average power of the system by storing energy in the energy storage system 404 . the energy storage system 404 is in communication with a power supply 406 and a processing device 408 having an interface 410 with which a user may activate , control , or otherwise use the system 400 . the processing device 408 is also in communication with the power supply 406 ; both of which are also in communication with the switch array modules 402 . the switch array modules 402 are in further communication with an antenna array 412 having one or more antennas . the use of multiple switch array modules 402 allows a user of the system 400 to select the frequency generated at the antenna array 412 . for example , as shown , each array module 402 may correspond to a particular frequency in a range between approximately 500 mhz and 4 ghz . modules for frequencies above and below this range may also be used . the modular arrangement of the switch arrays 402 permits each array to be compact in size . in various embodiments , each modular array 402 may be approximately the same size as a shoebox . in another embodiment , one or more optically - triggered switches 100 may be used in systems employing a translationally symmetric transmission line ( tstl ) circuit geometry for monocycle generation . for example , the switches 100 may be used in a limiter circuit 500 ( e . g . a large area radar limiter circuit ), as shown in fig8 . the circuit 500 may include a power conditioning system 502 in communication with two or more optically - triggered switches 100 through symmetric transmission lines 504 . as shown in fig9 a - b , another embodiment of the optically - triggered switch 100 may be integrated into a tstl pulse forming network . as shown in fig9 a , the switch 100 may have dual switch channels 600 that extend though the epitaxial layer 202 to the base layer 208 . a path 602 between the channels may be formed by aln ceramic glue . by way of example , the switch 100 may be integrated into high voltage insulation 604 as shown in fig9 b . in another example , the switch 100 may be incorporated into ruggedized package that is triggered by a high power laser diode , a tripled yttrium alexandrite garnet laser , or other laser device . in a wide variety of solid state laser triggered switched systems that can incorporate the switch 100 , including those shown in fig5 - 9b , the peak power output increased and may be in a range between approximately 1 gw and 100 gw with an average power in a range between approximately 1 kw and 1 gw . the systems may output power at a frequency between about 10 khz and 20 khz ; however the output may be rep - rate dependent as a burst mode of operation may reduce the average power output . the systems may generate a signal having an effective radiated power or equivalent radiated power ( erp ) between about 100 gw and 10 tw or may boost the gain for antenna by approximately 20 to 30 db or higher . regarding the output signal , the systems may be frequency agile such that the frequency may be adjustable and in a range between approximately 500 mhz and 3 ghz . in various embodiments , the frequency of the output signal may be modified or tailored to various desired targets and concept of operations ( conop ) scenarios . as shown in fig1 a - b , the waveshape and the number of cycles can be tailored to the desired application . as such , a narrowband frequency signal may be generated . as previous described , the switch 100 may permit reductions in size of various high power systems . for example , the systems may be compact and housed in rugged and robust housings approximately the size of a shoebox . the solid state systems may be configured to be waterproof or water resistant , drop or shock resistant , and suitable for operational temperatures up to , but not limited to , approximately 200 ° c . similarly , the weight of the systems may be reduced . in various aspects , the weight of the systems may depend on the desired rep - rate of the system . for example , the systems may be less than approximately 200 pounds , and may even weigh 20 pounds or less . low rep - rate systems may be very compact and portable by one or two people . the size and weight of the systems may also be may be modified or tailored to various desired targets and conop scenarios . in various embodiments , the frequency , power , and rep - rate of the output signal as well as the weight of the system or device may be configured and varied with gains in one parameter being made for losses in another . for example , one system may be modified to generate a first output signal at a frequency of 500 mhz , for 5 cycles at a power of 1 gw and 1 khz with an average power of 20 kw . the same system may be easily and dynamically modified to generate an output signal for 5 cycles at a power of 1 gw and 100 hz with an average power of 2 kw . it will be appreciated that the device and method of the present invention are capable of being incorporated in the form of a variety of embodiments , only a few of which have been illustrated and described above . the invention may be embodied in other specific forms without departing from its spirit or essential characteristics . the described embodiments are to be considered in all respects only as illustrative and not restrictive and the scope of the invention is , therefore indicated by the appended claims rather than by the foregoing description . all changes which come within the meaning and range of equivalency of the claims are to be embraced within their scope .