reference will now be made in detail to the present preferred embodiments of the invention , examples of which are illustrated in the accompanying drawings . wherever possible , the same reference numbers are used in the drawings and the description to refer to the same or like parts . the present invention provides an electrostatic discharge ( esd ) protection circuitry , which can be used in a radio frequency ( rf ) circuitry for electrostatic discharge protection . the esd protection circuitry considers the power gain performance of the rf circuitry and the esd level and overcomes the problems associated with prior art techniques while raising the esd protection threshold . the new proposed esd protection design is stacked with one or more lc tanks in the input / output ( i / o ) port with v dd - to - v ss power - rail clamp circuits . the values of inductance and capacitance in the lc tank can be selected by resonant at the rf operating frequency . for example , the values of inductance and capacitance can be selected by applying the following formula to resonant at the operating frequency of each individual rf circuit . this prevents the loss of signals to ground due to the infinite resistance seen by signals . in the formula , w represents the operating frequency of the rf circuit . the values of the inductance and capacitance of the lc tank will also determine the loss of power gain , so simulation tools are used to select the optimal values . in the esd condition , the esd current will be discharged through the esd device and the inductor . the inductors are made of the top thick metal in general and are metal lines with low parasitic resistance . thus , in the proposed designs , the novel lc tank esd circuits will result in higher - level esd protection for rf circuits . in the following figures from fig1 to fig1 , several embodiments are introduced for the invention , including esd protection devices stacked with one or more lc tanks in the i / o port with v dd - to - v ss power - rail clamp circuits . please refer to fig1 , which depicts a rf circuit device 1000 with an esd circuit stacked with a lc tank structure 1060 ( esd block n 1 and esd block p 1 ) of a preferred embodiment of the invention . the rf circuit device 1000 includes a rf circuit 1010 with a vdd voltage rf pad 1020 , a vss rf pad 1030 and a rf input pad 1040 is provided in fig1 . between the rf circuit 1010 and the rf input pad 1040 is the esd circuit . the esd circuit includes a v dd - to - v ss power - rail clamp circuit 1050 and a lc tank structure 1060 . the lc tank structure 1060 includes two esd blocks , including esd block n 1 and esd block p 1 . the esd block n 1 and esd block p 1 respectively includes a diode ndio , a diode pdio and two lc tanks lc tank n and lc tank p , which are connected in series . each of the lc tanks lc tank n and lc tank p includes an inductor and capacitor , which are connected in parallel . the diode pdio includes an cathode terminal coupled to a first terminal a of the esd clamp circuit 1050 and a anode terminal coupled to the lc tank p . the diode ndio includes an cathode terminal coupled to lc tank n and a anode terminal coupled to a second terminal b of the esd clamp circuit 1050 . a terminal c between the rf circuit 1010 and the rf input pad 1040 is connected to both of the lc tanks lc tank n and lc tank p . when the lc tank is resonant to the rf frequency , there is infinite impedance , thus minimizing the power gain loss . the esd current will be discharged through the inductors and the esd diodes , as the bold dash lines shown in the fig1 . to avoid the diodes from operating under breakdown condition during the ps - mode and nd - mode esd stresses , which results in a lower esd protection level , a turn - on efficient v dd - to - v ss esd clamp circuit 1050 , between the power rails , is constructed into the esd protection circuit . this v dd - to - v ss esd clamp circuit can significantly increase the overall esd protection . when the rf input pad 1040 is zapped with one of the four esd stress modes , the ndio diode or the pdio diode operates under a forward - biased condition with the corresponding inductor to discharge the esd current . diodes operating under forward - biased condition can sustain a much higher esd level than those operating under reverse - biased breakdown condition . the v dd - to - v ss esd clamp circuit 1050 is turned on when the rf input pad 1040 is zapped with ps - mode or nd - mode esd stresses . the esd current is bypassed through the forward - biased pdio diode and the turned - on v dd - to - v ss esd clamp circuit 1050 between the v dd / v ss power rails , because the ndio diode , in ps - mode esd stress , does not operate under the breakdown condition . similarly , the ndio diode and the corresponding inductor operates under the forward - biased condition with the v dd - to - v ss esd clamp circuit 1050 , between the v dd / v ss power rails , to safely discharge the nd - mode esd current . the v dd - to - v ss esd clamp circuit 1050 is especially designed with a larger device dimension to sustain a high - level esd . although the large - dimension v dd - to - v ss esd clamp circuit 1050 has a large junction capacitance , this capacitance does not contribute to the rf input pad 1040 . by applying this esd protection design , the rf input pin can sustain much higher levels of esd in the four esd stress modes ( as shown in fig2 ). therefore , the loading capacitance generated from the pdio diode and the ndio diode of the esd protection device to the rf inpu pad 1040 can be significantly avoided by the insertion of the lc tank . hence , there will be no significant degradation of performance in the rf ic . fig1 depicts a rf circuit device 1100 with an esd circuit stacked with a lc tank structure 1160 , which includes two esd blocks esd block n 2 and esd block p 2 , in another preferred embodiment of the invention . in the alternative design , compared with elements in the fig1 , the positions of the lc tank lc tank p 2 and the diode pdio are switched and the positions of the lc tank lc tank n 2 and the diode ndio are also switched . the rf circuit device 1100 includes a rf circuit 1110 with a vdd voltage rf pad 1120 , a vss rf pad 1130 and a rf input pad 1140 is provided in fig1 . between the rf circuit 1110 and the rf input pad 1140 is the esd circuit . the esd circuit is constructed by a v dd - to - v ss power clamp circuit 1150 and the lc tank structure 1160 . the lc tank structure 1160 includes two esd blocks , esd block n 2 and esd block p 2 . the esd block n 2 includes a lc tank lc tank n 2 and a diode ndio . the esd block p 2 includes a lc tank lc tank p 2 and a diode pdio . the two lc tanks and the diodes are connected in series . each of the lc tanks lc tank n 2 and lc tank p 2 includes an inductor and capacitor , connected in parallel . the diode pdio includes an cathode terminal coupled to the lc tank lc tank p 2 and a anode terminal connected to a terminal c between the rf circuit 1110 and the rf input pad 1140 . the diode ndio includes an cathode terminal coupled to the terminal c between the rf circuit 1110 and the rf input pad 1140 and a anode terminal coupled to the lc tank lc tank n 2 . the other terminal of the lc tank p 2 opposite to the terminal connected to the pdio is connected to a first terminal a of the esd clamp circuit 1150 . the other terminal of the lc tank n 2 opposite to the terminal connected to the ndio is connected to a second terminal b of the esd clamp circuit 1150 . when the lc tank is resonant to the rf frequency , there is infinite impedance , thus minimizing the power gain loss . the esd current will be discharged through the inductors and the esd diodes , as the bold dash lines shown in the fig1 . to avoid the diodes from operating under breakdown condition during the ps - mode and nd - mode esd stresses , which results in a lower esd protection level , a turn - on efficient v dd - to - v ss esd clamp circuit 1150 , between the power rails , is constructed into the esd protection circuit . this v dd - to - v ss esd clamp circuit can significantly increase the overall esd protection . the v dd - to - v ss esd clamp circuit 1150 is especially designed with a larger device dimension to sustain a high - level esd . although the large - dimension v dd - to - v ss esd clamp circuit 1150 has a large junction capacitance , this capacitance does not contribute to the rf input pad 1140 . by applying this esd protection design , the rf input pin can sustain much higher levels of esd in the four esd stress modes ( as shown in fig2 ). therefore , the loading capacitance generated from the pdio diode and the ndio diode of the esd protection device to the rf input pad 1140 can be significantly avoided by the insertion of the lc tank . hence , there will be no significant degradation of performance in the rf ic . to consider the parasitic effect of inductors and capacitors implemented on the chip , a lc tank structure with lc tanks stacked in series is provided in the invention to achieve higher impedance at resonation . by such implementation , the power gain performance of the rf circuitry and the esd level are considered . please refer to fig1 , which depicts a rf circuit device 1200 with an esd circuit stacked with a lc tank structure 1260 of a preferred embodiment of the invention . the rf circuit device 1200 includes a rf circuit 1210 with a vdd voltage rf pad 1220 , a vss rf pad 1230 and a rf input pad 1240 is provided in fig1 . between the rf circuit 1210 and the rf input pad 1240 is the esd circuit . the esd circuit includes a v dd - to - v ss power clamp circuit 1250 and a lc tank structure 1260 . the lc tank structure 1260 includes a first stacked lc tank block 1260 slcp , a esd diode pdio , a second stacked lc tank block 1260 slcn and another esd diode ndio connected in series . each of the stacked lc tank blocks includes at least two lc tanks stacked in series together . the diode pdio includes an cathode terminal coupled to a first terminal a of the esd clamp circuit 1250 and a anode terminal coupled to the first stacked lc tank block 1260 slcp . the diode ndio includes an cathode terminal coupled to the second stacked lc tank block 1260 slcn and a anode terminal coupled to a second terminal b of the esd clamp circuit 1250 . a terminal c between the rf circuit 1210 and the rf input pad 1240 is connected to both of the first stacked lc tank block 1260 slcp and a second stacked lc tank block 1260 slcn . as previously mentioned , power gain loss is minimized when the lc tanks are resonant to the rf circuit frequency . the esd current will be discharged through the inductors and the esd diodes , as shown in fig1 . to avoid the diodes from operating under breakdown condition during the ps - mode and nd - mode esd stresses , which results in a lowered esd protection level , a turn - on efficient v dd - to - v ss esd clamp circuit 1250 , between the power rails , is constructed into the esd protection circuit . this v dd - to - v ss esd clamp circuit can significantly increase the overall esd protection . when the rf input pad 1240 is zapped with one of the four esd stress modes , the ndio or pdio diode operates under the forward - biased condition with the inductor to discharge the esd current . diodes operating under the forward - biased condition can sustain a much higher esd level than those operating under reverse - biased breakdown condition . the v dd - to - v ss esd clamp circuit 1250 is turned on when the rf input pad 1240 is zapped with ps - mode or nd - mode esd stresses . the esd current is bypassed through the forward - biased pdio diode and the turned - on v dd - to - v ss esd clamp circuit 1250 between the v dd / v ss power rails , because the ndio diode , in ps - mode esd stress , does not operate under the breakdown condition . similarly , the ndio diode and inductor operates under the forward - biased condition with the v dd - to - v ss esd clamp circuit 1250 , between the v dd / v ss power rails , to safely discharge nd - mode esd current . the v dd - to - v ss esd clamp circuit 1250 is especially designed with a larger device dimension to sustain a high - level esd . although the large - dimension v dd - to - v ss esd clamp circuit 1250 has a large junction capacitance , this capacitance does not contribute to the rf input pad 1240 . by applying this esd protection design , the rf input pad 1240 can sustain much higher levels of esd in the four esd stress modes ( fig2 ). therefore , the loading capacitance generated from the pdio and ndio of esd protection devices to the rf input pad 1240 can be significantly avoided by the insertion of the lc tank . hence , there will be no significant degradation of performance in rf ic . please refer to fig1 , which depicts a rf circuit device 1300 with an esd circuit stacked with a lc tank structure 1360 of another preferred embodiment of the invention , which considers the parasitic effect of inductors and capacitors implemented on the chip . in the alternative design , compared with elements in the fig1 , positions of the first stacked lc tank block 1360 slcp and the pdio diode are switched , and positions of the second stacked lc tank block 1360 slcn and the ndio diode are also switched . the rf circuit device 1300 includes a rf circuit 1310 with a vdd voltage rf pad 1320 , a vss rf pad 1330 and a rf input pad 1340 is provided in fig1 . between the rf circuit 1310 and the rf input pad 1340 is the esd circuit . the esd circuit includes a v dd - to - v ss power - rail clamp circuit 1350 and a lc tank structure 1360 . the lc tank structure 1360 includes a first stacked lc tank block 1360 slcp and a second stacked lc tank block 1360 slcn connected in series . each of the stacked lc tank blocks includes at least two lc tanks stacked in series together . the diode pdio includes an cathode terminal coupled to the first stacked lc tank block 1360 slcp and a anode terminal connected to a terminal c between the rf circuit 1310 and the rf input pad 1340 . the diode ndio includes an cathode terminal coupled to the terminal c between the rf circuit 1310 and the rf input pad 1340 and a anode terminal coupled to the second stacked lc tank block 1360 slcn . the other terminal of the first stacked lc tank block 1360 slcp opposite to the terminal connected to the pdio is connected to a first terminal a of the esd clamp circuit 1350 . the other terminal of the second stacked lc tank block 1360 slcn opposite to the terminal connected to the ndio is connected to a second terminal b of the esd clamp circuit 1350 . as previously mentioned , power gain loss is minimized when the lc tanks are resonant to the rf circuit frequency . the esd current will be discharged through the inductors and the esd diodes , as shown in fig1 . to avoid the diodes from operating under breakdown condition during the ps - mode and nd - mode esd stresses , which results in a lower esd protection level , a turn - on efficient v dd - to - v ss esd clamp circuit 1350 , between the power rails , is constructed into the esd protection circuit . this v dd - to - v ss esd clamp circuit can significantly increase the overall esd protection . when the rf input pad 1340 is zapped with one of the four esd stress modes , the ndio or pdio diode operates under the forward - biased condition with the inductor to discharge the esd current . diodes operating under the forward - biased condition can sustain a much higher esd level than those operating under reverse - biased breakdown condition . the v dd - to - v ss esd clamp circuit 1350 is turned on when the rf input pad 1340 is zapped with ps - mode or nd - mode esd stresses . the esd current is bypassed through the forward - biased pdio diode and the turned - on v dd - to - v ss esd clamp circuit 1350 between the v dd / v ss power rails , because the ndio diode , in ps - mode esd stress , does not operate under the breakdown condition . similarly , the ndio diode and inductor operates under the forward - biased condition with the v dd - to - v ss esd clamp circuit 1350 , between the v dd / v ss power rails , to safely discharge nd - mode esd current . the v dd - to - v ss esd clamp circuit 1350 is especially designed with a larger device dimension to sustain a high - level esd . although the large - dimension v dd - to - v ss esd clamp circuit 1350 has a large junction capacitance , this capacitance does not contribute to the rf input pad 1340 . by applying this esd protection design , the rf input pad 1340 can sustain much higher levels of esd in the four esd stress modes ( fig2 ). therefore , the loading capacitance generated from the pdio and ndio of esd protection devices to the rf input pad 1340 can be significantly avoided by the insertion of the lc tank . hence , there will be no significant degradation of performance in rf ic . in alternative embodiment as shown in fig1 , a lc tank structure with n - stage lc tanks stacked in series is provided to achieve higher impedance at resonation . by such implementation , the power gain performance of the rf circuitry and the esd level are both considered . in fig1 , which depicts a rf circuit device 1400 with an esd circuit stacked with a lc tank structure 1460 . the rf circuit device 1400 includes a rf circuit 1410 with a vdd voltage rf pad 1420 , a vss rf pad 1430 and a rf input pad 1440 . between the rf circuit 1410 and the rf input pad 1440 is the esd circuit . the esd circuit includes a v dd - to - v ss power clamp circuit 1450 and a lc tank structure 1460 . the lc tank structure 1460 includes a first n - stage stacked lc tank block 1460 slcp , a esd diode pdio , a second n - stage stacked lc tank block 1460 slcn , and a esd diode ndio connected in series . each of the stacked lc tank blocks includes at least two lc tanks stacked in series together . the diode pdio includes an cathode terminal coupled to a first terminal a of the esd clamp circuit 1450 and a anode terminal coupled to the first n - stage stacked lc tank block 1460 slcp . the diode ndio includes an cathode terminal coupled to the second n - stage stacked lc tank block 1460 slcn and a anode terminal coupled to a second terminal b of the esd clamp circuit 1450 . a terminal c between the rf circuit 1410 and the rf input pad 1440 is connected to both of the first n - stage stacked lc tank block 1460 slcp and a second n - stage stacked lc tank block 1460 slcn . in further embodiment as shown in fig1 , a lc tank structure with n - stages lc tanks stacked in series is provided to achieve higher impedance at resonation . in the alternative design , compared with elements in the fig1 , positions of the first n - stage stacked lc tank block 1560 slcp and the pdio diode are switched , and positions of the second n - stage stacked lc tank block 1560 slcn and the ndio diode are also switched . as shown in fig1 , which depicts a rf circuit device 1500 with an esd circuit stacked with a lc tank structure 1560 , which considers the parasitic effect of inductors and capacitors implemented on the chip . the rf circuit device 1500 includes a rf circuit 1510 with a vdd voltage rf pad 1520 , a vss rf pad 1530 and a rf input pad 1540 is provided in fig1 . between the rf circuit 1510 and the rf input pad 1540 is the esd circuit . the esd circuit includes a v dd - to - v ss power clamp circuit 1550 and a lc tank structure 1560 . the lc tank structure 1560 includes a first n - stage stacked lc tank block 1560 slcp and a second n - stage stacked lc tank block 1560 slcn connected in series . each of the stacked lc tank blocks includes at least two lc tanks stacked in series together . esd devices with stacked lc tank and diode ( esd block ) structures applying the same principle of the incorporation of lc tanks into a esd protection device and the fact that stacked esd devices decreases the parasitic capacitance , it is provided in an alternative embodiment to create designs of esd protection devices by stacking similar esd blocks ( esd block p 1 and esd block n 1 as shown in fig1 ), herein is denoted as a “ stacked esd block structure ”. using these designs , the power gain loss is reduced by stacked lc tanks and the power gain loss affected by the stacked esd diodes is also decreased . this significantly lowers the total power gain loss by the introduction of esd circuits into rf circuits . fig1 depicts the esd circuit stacked with a stacked esd block structure 1660 . the rf circuit device 1600 includes a rf circuit 1610 with a vdd voltage rf pad 1620 , a vss rf pad 1630 and a rf input pad 1640 is provided in fig1 . between the rf circuit 1610 and the rf input pad 1640 is the esd circuit coupled therebetween . the esd circuit includes a v dd - to - v ss power clamp circuit 1650 and a stacked esd block structure 1660 . the stacked esd block structure 1660 includes two portions between the esd clamp circuit 1650 and a terminal c located between the rf circuit 1610 and the rf input pad 1640 . in the first portion , the first esd block esd block p 1 , a lc tank lc 1 and an esd diode pdio are connected in series . one terminal of the first esd block esd block p 1 is connected to a first terminal a of the esd clamp circuit 1650 and another terminal of the first esd block esd block p 1 is connected to an cathode terminal of the diode pdio . a anode terminal of the diode pdio is connected to the lc tank lc 1 . the other terminal of the lc tank lc 1 opposite to the terminal connected to the diode pdio is connected to terminal c . in the second portion , the second esd block esd block n 1 , a lc tank lc 2 and an esd diode ndio are connected in series . one terminal of the second esd block esd block n 1 is connected to a second terminal b of the esd clamp circuit 1650 and another terminal of the second esd block esd block n 1 is connected to a anode terminal of the diode ndio . an cathode terminal of the diode ndio is connected to the lc tank lc 2 . the other terminal of the lc tank lc 2 opposite to the terminal connected to the diode ndio is connected to the terminal c . to avoid the diodes from operating under breakdown condition during the ps - mode and nd - mode esd stresses , which results in a lowered esd protection level , a turn - on efficient v dd - to - v ss esd clamp circuit 1650 , between the power rails , is constructed into the esd protection circuit . this v dd - to - v ss esd clamp circuit can significantly increase the overall esd protection while lowering the power gain loss of the rf circuit . when the rf input pin is zapped with one of the four esd stress modes , the ndio or pdio diode operates under forward - biased condition with the inductor to discharge the esd current . diodes operating under forward - biased condition can sustain a much higher esd level than those operating under reverse - biased breakdown condition . the v dd - to - v ss esd clamp circuit 1650 is turned on when the rf input pad 1640 is zapped with ps - mode or nd - mode esd stresses . the esd current is bypassed through the forward - biased pdio diode and the turned - on v dd - to - v ss esd clamp circuit 1650 between the v dd / v ss power rails , because the ndio diode , in ps - mode esd stress , does not operate under breakdown condition . similarly , the ndio diode and inductor operates under forward - biased condition with the v dd - to - v ss esd clamp circuit 1650 , between the v dd / v ss power rails , to safely discharge nd - mode esd current . the v dd - to - v ss esd clamp circuit 1650 is especially designed with a larger device dimension to sustain a high - level esd . although the large - dimension v dd - to - v ss esd clamp circuit 1650 has a large junction capacitance , this capacitance does not contribute to the rf input pad 1640 . by applying this esd protection design , the rf input pin can sustain much higher levels of esd in the four esd stress modes ( fig2 ). therefore , the loading capacitance generated from the pdio and ndio of esd protection devices to the rf input pad 100 can be significantly avoided by the insertion of the lc tank . hence , there will be no significant degradation of performance in rf ic . fig1 shows an alternative design to the said circuit by stacking esd blocks with the lc tanks and the diodes switched ( esd block p 2 and esd block n 2 ). fig1 depicts the esd circuit stacked with a stacked esd block structure 1760 . the rf circuit device 1700 includes a rf circuit 1710 with a vdd voltage rf pad 1720 , a vss rf pad 1730 and a rf input pad 1740 is provided in fig1 . between the rf circuit 1710 and the rf input pad 1740 is the esd circuit coupled therebetween . the esd circuit includes a vdd - to - vss power clamp circuit 1750 and a stacked esd block structure 1760 . the stacked esd block structure 1760 includes two portions . in the first portion , a first esd block esd block p 2 , a lc tank lc 1 and an esd diode pdio are connected in series . in the second portion , a second esd block esd block n 2 , a lc tank lc 2 and an esd diode ndio are connected in series . each of the esd block includes at least a lc tank and an esd diode stacked in series together . in the alternative design , compared with elements in the fig1 , positions of the first esd block esd block p 2 and the pdio diode are switched , and positions of the second esd block esd block n 2 and the ndio diode are also switched . to avoid the diodes from operating under breakdown condition during the ps - mode and nd - mode esd stresses , which results in a lower esd protection level , a turn - on efficient v dd - to - v ss esd clamp circuit 1750 , between the power rails , is constructed into the esd protection circuit . this significantly increases the overall esd protection while lowering the power gain loss of the rf circuits . the esd circuit with lc tank above - mentioned is constructed of two parts . first is the implementation of esd device in the i / o port . the other is the lc tank . regarding the esd device , due to the minimization requirement of parasitic capacitance in rf ic , esd devices used in this invention must possess high esd level with small layout area . regarding the lc tank , the inductor can be implemented on board the chip . in cmos technology , on - chip inductors with a low q value could cause degradation to the realistic lc resonating condition . however , there exist alternative high q value inductors and bond - wire inductors that will limit such degradations . the capacitors used in the invention can be metal - in - metal or mos capacitors . it will be apparent to those skilled in the art that various modifications and variations can be made to the structure of the present invention without departing from the scope or spirit of the invention . in view of the foregoing , it is intended that the present invention cover modifications and variations of this invention provided they fall within the scope of the following claims and their equivalents .