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Justia Patents US Patent Application for Film taking-off method Patent Application (Application #20070023867)
Film taking-off method
The invention relates to a method of producing a film intended for applications in electronics, optics or optronics starting from an initial wafer, which includes a step of implanting atomic species through one of the faces of the wafer. This method includes forming a step of defined height around the periphery of the wafer, with the step having a mean thickness that is less than that of the wafer; and selectively implanting atomic species through a face of the wafer but not through the step to form an implanted zone at a defined implant depth with the film being defined between the face of the wafer and the implanted zone. The implantation of atomic species into the step can be prevented by forming a protective layer at least over the step or by masking the step. The invention also relates to a wafer obtainable by the method.
The present invention relates to the production of a film, starting from an initial wafer, including a step of implanting atomic species through one of its faces in order to form therein a buried implanted zone at a defined depth, with the film to be produced then being bounded by the implanted face of the wafer and by this implanted zone.
This technique is especially employed for lifting off the film, by carrying out, after the implantation, the following steps (illustrated by FIGS. 1A and 1B):
the wafer 10 is bonded on its implanted face to a receiving substrate 20; and
energy (typically thermal and/or mechanical energy) is supplied so as to detach the film 15 from the implanted zone 12 (this process is known in the art by the term SMART-CUT®).
The film 15 is then taken off the wafer 10, to be transferred onto the receiving substrate 20 (see FIG. 1B).
Referring to FIGS. 1A and 1B, the faces of the wafer 10 are usually chamfered on the periphery (chamfers 11 and 11′), so that the bonding of the receiving substrate 20 to the wafer 10 takes place mainly only on the surface of the wafer 10 that is not located on the chamfer 11.
Thus, referring to FIGS. 1B and 1C, the film 15 is not exactly taken off the entire surface of the wafer 10, since, after taking-off, the chamfered portion of the film initially bounded by the implanted zone remains attached to the wafer 10, thus forming a ring 14 that surrounds a hollow volume corresponding approximately to the volume of the film 15 that is removed.
In the particular case in which the film 15 is made of crystalline material, strains can then propagate throughout the film 15 and thus have major deleterious consequences.
Furthermore, the receiving substrate 20 may itself have a peripheral chamfer, not necessarily identical to the chamfer 11 of the wafer 10, which may therefore be offset relative to the chamfer 11 so that there is irregular detachment of the film 15 along its edges. The latter effect is also accentuated by the fact that the bonding forces at the bonding interface are of course weaker along the edges than in the central portion. The film 15 taken off therefore has rather irregular edges and internal defects or damage.
Various prior art references have discussed how to try to resolve the film removal problems. The technique proposed in document U.S. 2004/0121557 is illustrated in FIGS. 2A to 2C. It includes, prior to taking-off of the layer, routing the wafer 10 so as to remove the peripheral chamfered zones and in forming in their stead a step in the thickness of the wafer 10 with a height h. This height h may therefore be chosen to be greater than the implant depth hi formed in the wafer 10 for the purpose of taking-off the layer. The implanted zone 12 is therefore separated from the bottom of the step 11, and therefore from the peripheral zone of the wafer 10, by a distance equal to (h-h1). The film 15 bounded by the implanted zone 12 and the implanted face therefore no longer includes chamfered peripheral zones, its free face then consisting solely of a planar surface suitable for good bonding to the receiving substrate 20.
Referring to FIG. 2B, this entire film 15 is then taken off, without having the fracture problems along the edges. The film 15 taken off is thus of better quality. The receiving substrate 20 and the film 15 may however be contaminated by the wafer 10 around its peripheral portions (i.e., on step 11). This is because the step 11 has also undergone implantation and therefore includes an implanted zone 12′ that weakens the superjacent portion of the step. Furthermore, particles may become detached from this fragile portion when the implanted zone 12′ is subjected to external stresses, such as those resulting from a heat treatment that is carried out in order to detach the film 15. These detached particles then contaminate the film 15 and the receiving substrate 20.
This particle contamination problem may also be manifested during the "reclaiming" treatments needed to reform a clean film, which can subsequently be transferred. This contamination may be worse if the same wafer 10 is used for several successive taking-off operations, the same step 11 then undergoing an alternation of implantations and heat treatments.
It might therefore be proposed, on the basis of U.S. Pat. No. 6,596,610, to subject the wafer 10′ (as shown in FIG. 2C) after taking-off the film or layer to a thermal and/or mechanical and/or chemical reclaiming treatment in order to help in the removal of the remaining implanted zones 12, so as to be able to reuse the wafer 10′. However, the reclaiming operation proposed by U.S. Pat. No. 6,596,610 remains complex and expensive as it requires a selective treatment of the ring, and this treatment must also be repeated at each taking-off.
Thus, there is a need for improvements in these processes in order to enhance the quality and properties of the transferred layer. This need is now met by the present invention.
The invention now provides a method to remove and transfer a film from a wafer in such a way that the film is of good crystalline quality and has regular borders, with minimal contamination. It also enables reclaiming of the wafer that has provided the film, so that it can again provide additional films with minimum risk of contamination.
According to one embodiment, the invention relates to a method of producing a film for electronic, optic or optronic applications from a wafer, by forming a step of defined height around the periphery of the wafer, with the step having a mean thickness that is less than that of the wafer; and selectively implanting atomic species through a face of the wafer but not through the step to form an implanted zone at a defined implant depth with the film being defined between the face of the wafer and the implanted zone. The implantation of atomic species into the step can be prevented by forming a protective layer at least over the step or by masking the step.
The implanted zone is typically formed as a zone of weakness, so that the method further comprises bonding a receiving substrate to the implanted face of the wafer; and then supplying energy to the zone of weakness to detach the film from the wafer to transfer it to the receiving substrate. The wafer can be recycled and the steps repeated so that a plurality of films can be successively transferred.
In another embodiment, the invention proposes a method of producing a film intended for applications in electronics, optics or optronics starting from an initial wafer, which includes a step of implanting atomic species through one of the faces of the initial wafer. This method comprises the formation of a step of defined height around the periphery of the wafer, the mean thickness of the wafer at the step being less than the mean thickness of the rest of the wafer; the protection of the step against the implantation of atomic species; and the implantation of atomic species through that face of the wafer having the step, so as to form an implanted zone at a defined implant depth.
The invention also relates to a wafer for providing a film intended for applications in electronics, optics or optronics, which includes a peripheral zone having a smaller mean thickness than that of the wafer by about 1 micron or more, so as to form a step around the periphery of the wafer, wherein the step is coated with a protective layer in order to protect the step from being implanted with atomic species. The protective layer is preferably an amorphous material such as silicon oxide (SiO2), silicon nitride (Si3N4), PSG (phosphosilicate glass) or BPSG (borophosphosilicate glass), while the wafer is made of bulk crystalline material or is in the form of a composite structure comprising crystalline materials. Generally, the wafer includes a support substrate, a buffer structure and an upper layer that is sufficiently thick to be facilitate transfer of a film therefrom, wherein the height of the step is equal to or greater than the thickness of the upper layer. The upper layer preferably comprises Si1-xGex, optionally in combination with one or more layers of Si1-yGey with x differing from y and x and y being between 0 and 1, respectively.
Other features, objects and advantages of the invention will become more clearly apparent from the description below, illustrated by the following Figures:
FIGS. 1A to 1C show various stages of a first known method for lifting off a film;
FIGS. 2A to 2C show various stages of a second known method of lifting off a film;
FIGS. 3A to 3F show various stages of a method of lifting off a film according to the invention;
FIGS. 4A and 4B show two stages in the formation of a protective layer according to the invention;
FIG. 5 is a graph showing the distribution of implantation energy over the thickness of implanted material;
FIG. 6 shows a first wafer that can undergo several successive film taking-off operations according to the invention; and
FIG. 7 shows another first wafer that can undergo several successive film taking-off operations according to the invention, with each of the wafers of FIGS. 6 and 7 having a peripheral step protected according to the invention.
The preferred method according to the invention is a film taking-off or transfer method using the well known SMART-CUT® transfer process and wafer bonding techniques.
The invention relates in particular to the preparation of the donor wafer, intended for the taking-off operation that will be carried out subsequently, implementing the following stages:
(a) the wafer is routed so as to form a step around the periphery of the wafer, the mean thickness of the wafer on the step being less than the mean thickness of the rest of the wafer;
(b) a protective layer is formed on the step so as to protect it from being implanted with atomic species; and
(c) atomic species are implanted through that face of the wafer which has been routed, so as to form therein a buried zone of weakness.
Advantageously, these stages are implemented so that the height of the step is greater than the depth of implantation. Thus, the peripheral zone of the wafer will not impair the quality of the subsequent taking-off when a receiving substrate will be bonded onto the implanted face of the wafer and then the bonds in the implanted zone will be broken.
Moreover, the presence of the protective layer guarantees that the peripheral portions of the wafer are protected against the implantation of atomic species during stage (c), thus making subsequent reclaiming easier and/or improving the quality of the subsequent taking-off operation(s).
Other features of this method of producing a film are the following:
stage (a) includes the bonding of a film to a substrate in order to form the initial wafer, the film having a smaller area than the substrate so that, once these have been bonded, the step is at least partly defined by the difference in area between the film and the substrate;
stage (a) includes the removal of material from a peripheral surface of the wafer down to a defined removal depth so as to form the step;
stage (a) furthermore includes a thickening of the step;
the implant depth is equal to the height of the step or less;
according to a first embodiment of the invention, stage (b) includes the formation of a protective layer extending over at least the step and an operation to remove those portions of the protective layer which are not located on the step is optionally carried out by anisotropic etching or by polishing;
according to a second embodiment of the invention, stage (b) displays during stage (c), by masking the step during the implantation;
stage (c) is carried out in such a way that the implanted zone is a zone of weakness, in which the method furthermore includes the following stages:
a receiving substrate is bonded to the implanted face of the wafer; and then
energy is supplied so as to detach the film from the wafer in the zone of weakness;
the method furthermore includes, one or more times, the following successive stages:
implantation of atomic species through the detachment surface of the previous film so as to form a zone of weakness that defines a new film below the detachment surface; and
bonding of a receiving substrate to the implanted face of the wafer.
As noted, the invention also proposes a wafer for providing a film intended for applications in electronics, optics or optronics, which includes a peripheral zone having a smaller mean thickness than the rest of the wafer by about 1 micron or more, so as to form a step around the periphery of the wafer, wherein the step is coated with a protective layer in order to protect the step from being implanted with atomic species. Other features of this wafer are:
the protective layer is made of amorphous material;
the protective layer comprises SiO2, Si3N4, PSG or BPSG;
according to a first embodiment, the wafer is made of bulk crystalline material;
according to another embodiment, the wafer is a composite structure of crystalline materials;
the wafer comprises a support substrate, a buffer structure and an upper layer sufficiently thick to be able to detach therefrom a film by a SMART-CUT® process, the upper layer optionally comprising Si1-xGex and Si1-yGey, with x differing from y, x and y being between 0 and 1, respectively;
the height of the step is equal to or greater than the thickness of the upper layer.
FIGS. 3A to 3F show the various stages of a method according to the invention for lifting off a film from an initial wafer 30. This wafer 30 mainly, and advantageously, comprises one or more crystalline materials, such as semiconductor materials. The wafer 30 may be made of bulk material or is a composite structure comprising a succession of layers.
According to one embodiment, the wafer 30 includes a chamfered peripheral zone (as discussed above). Given that such a wafer 30 typically has a circular shape, this chamfered peripheral zone has an annular shape around the periphery of the wafer 30. According to this first embodiment, the wafer 30 is a fresh wafer, that is to say it has not yet undergone film transfer.
According to another embodiment, the wafer 30 includes a chamfered peripheral zone and has undergone at least one thin-film transfer operation consistent with that discussed above and illustrated by FIGS. 1A and 1B. According to this embodiment, the wafer 30 herefore includes a peripheral ring 14 that surrounds a hollow volume that is approximately identical to the volume of the previously transferred film.
According to yet another embodiment of the invention, the wafer 30 has undergone beforehand a film transfer operation and has thus already been routed according to the invention. Thus, the initial wafer 30 already includes a peripheral step.
According to a further embodiment of the invention, the wafer 30 is a hybrid substrate formed from a support substrate, onto which a film has been transferred during a prior operation. The wafer 30 can be a SOI (Silicon On Insulator) wafer for example, or else an SSOI (Strained Silicon On Insulator) or SiGeOI (SiGe On Insulator) wafer. Since in this case the wafer 30 has been produced by film transfer, a step already exists around the periphery of this wafer, corresponding to the non-transferred ring zone during the transfer operation. However, this "step" may not be sufficient, and it is necessary to carry out a routing operation on this type of substrate as well. European patent application EP 1 519 409 can be reviewed for further details regarding this type of wafer 30 and the way in which it is produced.
Referring to FIG. 3A, the routing of the wafer 30 is carried out over a width l and a depth h. The routing is carried out in such a way that the step 31 thus formed has a vertical wall 31a lying essentially perpendicular to the front face 1 of the wafer 30 and a horizontal wall 31b optionally lying parallel to the front face 1 of the wafer 30, these two walls 31a and 31b intersecting each other.
The width l of the step 31 is advantageously chosen to be equal to or greater than the width of the peripheral zone of the wafer 30 in one of the above four embodiments (that is to say the chamfer according to embodiment 1, the ring according to embodiment 2 and the step according to embodiment 3 or 4). For example, the width l may be equal to a few millimeters.
The routing is carried out in such a way that the depth of material h that is removed therefrom is greater than or equal to the depth of implantation e subsequently carried out (as illustrated in FIG. 3C). The routing depth h may thus be chosen to range between about 1000 Å and several hundred μm. The thickness of this step must be greater than the thickness removed (typically from 1000 to 2000 Å), in order typically to correspond to one or more thicknesses of film(s) to be transferred and of material removed during the reclaiming operation (a few μm), within, of course, the limits set by the thickness of the wafer (several hundred μm).
Thus, if the wafer 30 is essentially circular, the hollow volume obtained after the routing is then an annular cylinder with an outside diameter equal to the diameter of the wafer 30, an inside diameter extending right up to the vertical wall 31a and a height equal to h.
The techniques employed for this routing are substantially the same as those described in US patent application 20004/0121557, the entire content of which is expressly incorporated herein by reference thereto. These techniques may especially include mechanical machining or chemical etching of the peripheral zone of the wafer 30.
Referring to FIG. 3B, a preferred stage according to the invention includes forming a protective layer 36 on the step 31 (and in particular on the horizontal wall 31b of the step and also on the wall 31a) with a material thick enough to protect the subjacent portion 38 on the implantation subsequently carried out (as illustrated in FIG. 3C). A protective layer may also be provided on the vertical wall 31b in order to protect it from exposure to an ion beam that is not perfectly parallel to this wall 31a. Such an "inclined" implantation operation is sometimes also carried out when the crystalline material is implanted without an amorphous protective layer, so as to prevent the phenomenon of channeling.
This protective layer 36 may be produced from any type of material capable of fulfilling this function. Thus, a material in an amorphous phase may be chosen, such as SiO2, Si3N4, PSG or BPSG. The thickness of the protective layer is therefore matched to the material chosen, so as to exhibit sufficient stopping power to the implanted ions.
A general method for producing this protective layer is illustrated by FIGS. 4A and 4B and comprises the following stages:
formation of a layer 36′ made of protective material on the wafer 30 (FIG. 4A); and
optional removal of those portions of the layer 36′ which are not located on the step 31, so as to keep thereon only a protective layer 36 of thickness eh3 on the step 31 (FIG. 4B).
Referring to FIG. 4A, the first stage includes forming a layer 36′ of protective material on the wafer 30, the layer 36′ having a mean thickness eh1 on the front face 1 of the wafer 30, a mean thickness eh2 on the horizontal wall 31b of the step 31 and a mean thickness ev on the vertical wall 31a of the step 31.
These layers may be formed by material deposition and/or thermal oxidation methods.
The techniques employed for depositing the layer 36′ may be of the LPCVD (Low-Pressure Chemical Vapor Deposition), PECVD (Plasma-Enhanced Chemical Vapor Deposition) or other techniques of the CVD (Chemical Vapor Deposition) type.
When the layer 36′ is made of SiO2, it can be deposited by SiO2 deposition or it can be formed by means of tetraethoxysilane (TEOS), optionally combined with oxygen and/or ozone, applied to a surface containing silicon, or using silane and O2 (also called HTO), in LPCVD or in PECVD. Optionally, dopants may be added to the SiO2 layer 36′, such as phosphorus, and therefore forming a PSG layer 36′, or boron and phosphorus, and therefore forming a BPSG layer 36′.
When the protective layer 36′ is made of Si3N4 or SixNyHz, it may be deposited using SiCl2H2 and NH3 (in LPCVD) or SiH4 and NH3 (in PECVD).
Using LPCVD techniques typically results in the formation of a layer 36′ having a substantially constant thickness (i.e. eh1, eh2 and ev are approximately equal) over the entire exposed surfaces. Thus, the layer will be formed substantially uniformly on the front face 1, the rear face 2 and on the step 31 of the wafer 30.
Using PECVD techniques typically results in the formation of a layer 36′ that does not have a substantially constant thickness, the deposition mainly taking place on the faces directly exposed (the front face 1, the rear face 2 and the horizontal wall 31b of the step 31) and to a lesser extent on the sidewall (the vertical wall 31a of the step 31).
When the layer 36′ is formed by thermal oxidation of the exposed surfaces of the wafer 30, these must therefore include silicon or another easily oxidizable material. Oxidation may lead to the formation of a layer 36′ that has different oxidized thicknesses on the front face 1, the rear face 2 and on the sidewall, the oxidation rates being dependent on the orientation of the crystal lattice on the surfaces to be oxidized.
The layer 36′ may finally include a coating of resin or polymer, or it may be completely formed therefrom.
Thus, the entire layer 36′ may be formed by thermal oxidation, by material deposition or by oxidation followed by material deposition. In the last case, thin oxidation prior to deposition may in fact be envisaged for the purpose of improving the quality of the interface with the wafer 30, it then being possible to form a passivation layer, or for the purpose of limiting any contamination caused by the subsequent deposition, or for the purpose of forming a stop layer during removal by selective etching of the deposited layer.
In any case, to fulfill its protection role, the thickness of the protective layer 36 on the step 31, finally formed from the formation of the layer 36′, must be greater than the maximum penetration of the ions into the material for the energy and dose intended. It may be considered that a protective layer 36 with a thickness of Rp+5ΔRp or greater (Rp being the depth associated with the peak of the Gaussian distribution of the implant and ΔRp being the standard deviation of this distribution—see FIG. 5 as illustration) is sufficient to fulfill its protection function. This is because the inventors have estimated that such a thickness is sufficient for the formation of a protective layer 36 that is sufficiently protecting.
It is possible to minimize the material to be deposited, and therefore the cost of the operation, by thus adjusting the thickness of the layer 36′.
Optionally, a removal step may be provided, for removing those portions of the layer 36′ present on the front face 1, and not located on the step 31, so as to keep only a protective layer 36 of thickness eh3 on the step 31, as illustrated in FIG. 4B.
Thus, the film that will be taken off (on the front face 1) is exposed and the step 31 is protected from the subsequent implantation.
For this purpose, and using a first technique, the front face 1 of the wafer 30 may be etched, either isotropically or anisotropically. For example, a plasma RIE (Reactive Ion Etching) anisotropic etching technique may be used, this being a preferred technique. Anisotropic etching is particularly suitable in the case in which the layer 36′ is deposited uniformly with a thickness eh1>1 (for example by means of an LPCVD technique). Since the width l of the step is of the order of 1 mm (typically between 0.5 mm and 3 mm), it is therefore preferable for eh1 to be substantially larger than the maximum depth of penetration of the ions into the material. The subsequent removal of a thickness typically of between eh1 and 1.3eh1 (a safety margin) means that the protective layer 36 on the step 31 is preserved.
The techniques employed for removing those portions of the layer 36′ not located on the step 31 may also include, at least in part, selective polishing, such as polishing in which SiO2 is removed more rapidly than a subjacent silicon surface, on the front face 1 and optionally on the rear face 2.
Alternatively, techniques for forming the protective layer 36 that do not require the removal of material may also be employed. Thus, for example, if the nature of the materials involved so allows, simple oxidation of the wafer 30 may allow the step 31 to be selectively oxidized without oxidizing the front face 1 (of the film to be taken off). This is the case for example when the wafer 30 includes a hybrid substrate formed from a Ge layer (which does not oxidize, or the oxide of which is not stable) on an Si substrate (which itself oxidizes), the step 31 being made of Si and the front face 1 made of Ge.
The following examples are provided to illustrate the preferred embodiments of the invention.
Example 1 Formation of the Protective Layer 36
LPCVD deposition of a thin SiO2 layer;
anisotropic etching, such as RIE etching, in order to remove the protective material present on the front face 1.
PECVD deposition of SiO2 or Si3N4, optionally preceded by a thin thermal oxidation; a thickness of Rp+5*ΔRp (see above) or greater may be chosen. Thus, by adjusting the thickness of the layer 36′ it is possible to minimize the amount of material to be deposited, and therefore the cost of the operation; and
CMP (Chemical-Mechanical Planarization) polishing on at least the front face 1 in order to remove the SiO2 or Si3N4 layer selectively over the subjacent material.
thermal oxidation of the wafer 30; and
CMP polishing on at least the front face 1 in order to remove the SiO2 and Si3N4 layer selectively over the subjacent material.
preferential formation of at least a thin Si3N4 or SiO2+Si3N4 layer of between about 5 and about 50 nanometers in thickness, so as to protect the wafer 30 from the contaminants that accompany PSG or BPSG formation;
deposition of PSG or BPSG;
thermal annealing between about 850° C. and about 1100° C., so as to make the PSG or BPSG flow. The effective thickness eh3 on the step 31 therefore increases, and then depends on thicknesses eh2 and ev, initially formed on the step, on the thickness eh1 of the material on the front face 1, on the annealing temperature and on the concentration of P and optionally the concentration of B; and
CMP polishing on at least the front face 1 in order to remove the SiO2 or Si3N4 layer selectively over the subjacent material.
In all cases, the steps of forming and of removing the layer 36′ are carried out in such a way that the thickness eh3 of the remaining protective layer 36 on the step 31 is straight enough, for the material in question, to protect the subjacent peripheral zone 38 of the wafer 30 from being implanted with atomic species of the type used for preparing for a film taking-off.
Thus, for implantation energies of between 20 keV and 210 keV and an atomic species (hydrogen and/or helium) dose of between 1×1016 at/cm2 and 1×1017 at/cm2, an SiO2 protective layer 36 with a thickness eh3 of greater than about 2 microns may provide sufficient protection.
Finally, referring to FIG. 3B, the wafer 30 includes a front portion 310 having the step 31 and a rear portion 320 corresponding to the part that was not routed. The peripheral portion 38 of the rear portion 320 is defined as the part lying beyond the horizontal wall 31a of the step 31.
This peripheral portion 38 of the wafer 30 is therefore protected by the protective layer 36 from any implantation of atomic species through the front face 1 of the wafer 30. Thus, the lower portion 320 of the wafer 30 is preserved from any weakening due to the ion implantation, unlike in the conventional techniques.
Referring to FIG. 3C, an atom implantation step is carried out through the front face 1 of the wafer 30 so as to create an implanted zone 32 at a depth e, advantageously defined as being less than or equal to the height h of the step 31.
The atomic species employed may be helium and/or hydrogen and/or other types of ionized atomic species, having a dose of between 1×1016 at/cm2 and about 1×1017 at/cm2. The implantation energy is typically between 20 keV and 210 keV.
Optionally, an operation to remove (preferably selectively) the protective layer 36 is carried out. It is preferable to remove this by etching, as a mechanical removal operation could lead to particulate contamination prejudicial to the quality of the bonding and of the structure to be formed. For example, HF may be used for selectively etching an SiO2 protective layer 36.
The film 35 to be taken off is then bounded by the implanted zone 32 and by the front face 1 of the wafer 30.
The implanted zone 32 thus constitutes a zone of weakness within which the bonds between the film 35 and the subjacent portion of the wafer 30 are weaker than elsewhere.
FIG. 3D shows a stage in which a receiving substrate 40 is bonded to the wafer 30 on its front face 1.
It is advantageous to prepare one or both surfaces to be bonded prior to the bonding operation so as to make these surfaces more hydrophilic and of better quality for the bonding. For example, it will be possible to carry out RCA cleaning, or plasma activation, or chemical cleaning based on hydrochloric acid, chemical-mechanical planarization, polishing, etc.
Optionally, and before the implantation, a bonding layer is formed on one or both surfaces to be bonded so as to improve the quality of the bonding. Optionally, this bonding layer or these bonding layers are made of insulating material so that the film 35 once taken off is electrically isolated from the receiving substrate 40. A SiO2 or Si3N4 bonding layer may thus be used.
As a variant, the bonding layer on the wafer 30 may have been formed during the protective layer 36, by leaving at least one portion of the protective material 36′ deposited on the front face 1 of the wafer 30 (see FIG. 4A).
A heat treatment suitable for increasing the bond strength may optionally be carried out after the bonding, for example at a temperature of between about 200° C. and about 350° C. for a few hours.
The receiving substrate 40, in a first embodiment, has a bonding surface whose area is greater than that of the front face 1 of the wafer 30. The film 35 to be taken off then has an area less than the receiving substrate 40 onto which it will be transferred.
In another embodiment, the receiving substrate 40 has a bonding surface whose area is substantially identical to that of the front face 1 of the wafer 30 so that the combination of the receiving substrate 40 and the film 35 to be taken off has no visible peripheral step. For this purpose, it is possible in particular to carry out a suitable routing operation on the receiving substrate 40 prior to bonding, or to choose a starting wafer 30 that is slightly larger than the receiving substrate 40 and to carry out the suitable routing in such a way that in the end the front face 1 has an area substantially identical to that of the receiving substrate 40. This second embodiment may be preferred, as it makes it possible to eliminate or minimize any exclusion zone (non-transferred zone) on the final product relative to the free space caused by the routing, which exclusion zone would be generated if the wafer 30 after routing had had a different size from that of the receiving substrate 40.
A supply of energy, such as thermal and/or mechanical energy, then allows the bonds in the implanted zone 32 to be broken and thus enables the film 35 to be transferred from the wafer 30 onto the receiving substrate 40, and therefore to produce the structure 50 shown in FIG. 3E.
If the lifted-off film 35 is made of semiconductor material and if a bonding layer made of insulating material was provided between the wafer 30 and the receiving substrate 40, the structure 50 obtained is then a semiconductor-on-insulator structure.
An optional finishing stage may then be provided, in order to eliminate any roughness from the detached surface of the film 35 and to make this surface one of high quality.
Referring to FIG. 3F, the wafer 30′ after taking-off comprises a front portion 310′ amputated from the film 35 and a rear portion 320 entirely preserved thanks to the presence of the protective layer 36 on the step 31.
The protective layer 36 may possibly then be removed, if this has not already been done, for example by etching, and optionally by selective etching.
This wafer 30′ may then be optionally reclaimed, so as to be used once again as donor wafer for a new film taking-off.
For this purpose, the front face 1′ is advantageously treated so as to become a bonding surface of sufficient quality to ensure good bonding to another receiving substrate.
If this treatment involves the use of chemical species, the protective layer 36 may serve to protect the rear portion 320 of the wafer 30, and in particular the step 31 (vertical wall 31a and horizontal wall 31b), from any chemical attack. The material of the protective layer 36 may thus be chosen for this purpose. Care should therefore be taken to produce the protective layer 36, if this has not already been done, before the etching.
The front portion 310′ of the wafer 30 can then be thickened by means of an epitaxial growth on its front face 1′ treated so as to receive the newly implanted atomic species for the purpose of a subsequent film transfer. This epitaxial growth may optionally be preceded by a polishing or etching step. It is therefore preferable to have chosen a protective layer 36 made of an amorphous material so that the epitaxy takes place only on the front face 1′ of the wafer 30′, and not also on the step 31. Thus, in this case, the protective layer 36 also fulfills the function of protecting the step 31 from any deposition.
n a first embodiment, the implantation for preparing the next taking-off is carried out directly after the treatment of the front face 1′ if a protective layer 36 has already been formed, or, if this is not so, directly after the formation of the protective layer 36.
In a first particular case, the new implantation is located at a depth greater than the height h′ of the step 31. Thus, after taking-off, a ring in accordance with what is known from the prior art (see in particular FIG. 1C) is again obtained, with the exception that the rear portion 320 of the wafer 30 in this case remained intact.
In another particular case, the implant depth is less than the height h′ of the step 31 and the taking-off is then substantially in accordance with the taking-off according to the invention with reference to FIGS. 3B to 3F. In this particular case, provision will thus be made to route down to a depth such that there is a means of lifting off two films from the front part 310 of the wafer 30, without encroaching on the rear portion 320 of the wafer 30.
In a second embodiment, a further routing operation is carried out so as to increase the height h′ of the step so that the next atom implantation takes place at a depth of less than or equal to the next height of the step 31. The method of preparing the wafer 30 for take off described above with reference to FIGS. 3A to 3F then applies in the rest of the process for this last film transfer.
FIGS. 6 and 7 show particular cases of films being successively taken off from the same wafer 30, which has a peripheral step 31 protected according to the invention.
Referring to FIG. 6, the height of the step 31 in this wafer 30 is such that the front portion 310 of the wafer 30 is sufficiently thick to successively take off one or more films therefrom, without having to route between each taking-off.
In a first embodiment of this step 31, a routing operation is carried out according to what was mentioned above, down to a suitable depth and over a suitable width.
The detachment face of the wafer 30 is simply reclaimed between each taking-off.
This structure is particularly efficient, as it offers the possibility of several successive films being rapidly and simply taken off, while still preserving the donor wafer 30.
Furthermore, the protective layer 6 guarantees protection of the rear portion 320 of the wafer 30, and in particular protects the subjacent portion 38 from successive atom implantations to which it would be subjected otherwise. Thus, if this protective layer 36 were not present, the subjacent portion 38 would become increasingly fragile as films are progressively taken off, to the point where particles would be detached and contaminate the front portion 310, the lifted-off film 50 and the receiving substrate 40.
Thus, for example the rear portion 320 of the wafer 30 may be a silicon support substrate followed by a buffer structure made of SiGe having a germanium concentration that progressively increases over the thickness until reaching a concentration x (of between 0 and 1) on a defined surface. The front portion 310 may in this case for example be made of an epitaxially grown Si1-xGex material, the concentration x of which is substantially identical to that of the material constituting the surface of the subjacent buffer layer.
In a second embodiment of the step 31 of FIG. 6, the front portion 310 has been bonded to the rear portion 320, this front portion 310 having a smaller area than the rear portion 320 so that, after bonding, the step 31 appears without it being absolutely necessary to carry out an additional routing operation. The height of this pre-existing step 31 is then about half the height of the transferred film (1700 Å for example, with about 200 Å of crystalline layer and about 1500 Å of bonding layer). The front portion 310 may thus be taken off an initial donor wafer using a film transfer technique, for example a SMART-CUT® process.
Again in this embodiment of the step 31, the bonding stage may include the formation of a bonding layer made of insulating material on one or both of the surfaces to be bonded. The wafer 30 produced is then of the semiconductor-on-insulator type, such as a wafer 30 of the SiGeOl type (for example by bonding a front portion 310 made of relaxed SiGe), referring for example to the technique described in FR 02/08600 incorporated here for reference. In particular, this wafer 30 may be produced by oxide/oxide bonding, that is to say an oxide bonding layer, for example about 1500 Å in thickness, will have been formed on the front portion 310 (the relaxed SiGe layer) and an oxide bonding layer, for example about 1500 Å in thickness, will have been formed on the rear portion 320 (for example made of bulk Si).
The bonding layer formed on the rear portion 320 may also act as a protective layer 36 on the horizontal face 31a of the step 31.
After optional heat treatments, with a view to improving the crystalline quality of the transferred film, this front portion 310 may be thickened up to about 2 microns. After this deposition, a wafer 30 as shown in FIG. 6 is therefore obtained (without having carried out a specific routing operation).
Optionally, routing may then be carried out, over a lateral distance (for example of between about 1 mm and about 3 mm) so as to produce a sharp contour on the step 31. A protective layer 36 according to the invention is then formed.
FIG. 7 illustrates a wafer 30 that has been routed over a height such that the front portion 310 can provide several films by taking-off according to the invention, without it being necessary to route it between each taking-off.
The front portion 310 is a composite structure comprising alternately layers of a first material (34a, 34b, 34c, 34d, 34e) and layers of a second material 39a, 39b, 39c, 39d, 39e), these being initially formed by epitaxy starting from the rear portion 320 of the wafer and before routing. Thus, it will be possible to have a front portion 310 comprising a succession of SiGe layers (34a, 34b, 34c, 34d, 34e) and a succession of elastically strained material Si1-yGey layers (39a, 39b, 39c, 39d, 39e), where x differs from y, and x and y are between 0 and 1 respectively, these layers being grown epitaxially from the rear portion 320, including an SiGe buffer layer 37b and a bulk Si support substrate 37a.
One of the successive implantations for preparing for successive taking-offs may therefore be carried out within an Si1-xGex layer (34e) so as to therefore prepare the transfer, with the subjacent strained Si1-yGey layer (39e), onto the receiving substrate 40.
It will therefore be possible to treat the structure comprising the receiving substrate and these lifted-off films so as to preserve only a portion of the Si1-xGex layer, so as to obtain a strained Si1-xGex/Si1-yGey-on-insulator structure.
As an alternative, the entire Si1-xGex remainder is removed so as in the end to obtain a strained Si1-yGey-on-insulator structure. For this purpose, selective etching between these two materials may be carried out.
As regards the remaining wafer 30, the taking-off surface may be reclaimed so as to preserve at least a portion of the layer 34e into which the atomic species were implanted, by means of a polishing or chemical etching operation.
As an alternative, the entire remainder of the layer 34e is removed by carrying out selective etching between Si1-xGEx and the subjacent Si1-yGey (layer 39d).
It should be noted that the protective layer 36 may also protect the rear portion 320 of the plate 30, and in particular the step 31 (vertical wall 31a and horizontal wall 31b), from such chemical attack. A material suitable for producing such a stop layer may in particular be chosen.
In one particular case according to the proposed method illustrated in FIG. 7, y is chosen to be equal to 0 so that the strained Si1-yGey layers (layers 39a, 39b, 39c, 39d, 39e) are made of elastically strained Si.
More generally, the invention is not limited to just the examples mentioned above—in particular, the wafer 30 is not necessarily protected by a protective layer 36 formed on the step 31—but extends to any type of protection capable of protecting the step 31 from implantation.
Thus, in a first alternative method of protection, a mask may be provided on the step 31 during implantation. This mask may thus be designed so as to permit only the passage of ions intended to form the zone of weakness 32 beneath the front face 1 of the wafer 30 and to prevent ions from reaching the step 31. This mask may be located level with the implanter or level with the wafer 30, or at an intermediate level.
In a second alternative method of protecting the step 31, and within the context in which an implantation system allowing an ion beam to scan one or more wafers 30 along a predetermined path is used, this predetermined path is defined so that the ions reach only the front face 1 of each wafer 30 and do not reach the step 31. Suitable means for controlling the ion beam and/or the moving support for the wafer(s) 30 may thus predefine the path of the ions on each wafer 30. Thus, the scanning may be automatically controlled, for example by predetermining the path using an automation computer program.
Of course, a person skilled in the art will thus understand that this invention is not limited to the case of SiGe and strained Si, but may be applied to any crystalline or non-crystalline material, in which a taking-off or an atom implantation according to the invention may be carried out. In particular, crystalline materials may be chosen that belong to the family of II.VI or III.V alloys and/or doped materials and/or materials that include carbon with a concentration ranging from about 5% to about 50%.
1. A method of producing a film for electronic, optic or optronic applications from a wafer, which comprises:
forming a step of defined height around the periphery of the wafer, with the step having a mean thickness that is less than that of the wafer; and
selectively implanting atomic species through a face of the wafer but not through the step to form an implanted zone at a defined implant depth with the film being defined between the face of the wafer and the implanted zone.
2. The method of claim 1, which further comprises forming the wafer by bonding a film to a substrate, with the film having a smaller area than that of the substrate so that, after bonding, the step is at least partly defined by the difference in area between the substrate and the film.
3. The method of claim 1, wherein the step is formed by removing material from a peripheral surface of the wafer down to a defined removal depth.
4. The method of claim 1, further comprising thickening of the step.
5. The method of claim 1, wherein the atomic species implantation depth is equal to or less than the height of the step.
6. The method of claim 1, wherein the wafer is one that has previously been subjected to a film removal operation, the wafer therefore having a ring on a peripheral zone of a face, and which further comprises removing the ring prior to forming the step.
7. The method of claim 1, wherein the height of the step is about 1 micron or more.
8. The method of claim 1, which further comprises forming a protective layer over at least the step to prevent atomic species from being implanted into the step.
9. The method of claim 8, which further comprises also forming the protective layer on portions of the wafer that are not located on the step.
10. The method of claim 9, which further comprises removing those portions of the protective layer which are not located on the step by anisotropic etching or polishing.
11. The method of claim 8, wherein the protective layer is provided with a thickness which on average is substantially equal to or greater than the sum of the implantation depth of the atomic species that is associated with the peak of the Gaussian distribution of the implanting, and a depth corresponding to about five times the standard deviation of this distribution.
12. The method of claim 8, which further comprises removing the protective layer after implanting the atomic species into the wafer.
13. The method of claim 8, wherein the protective layer is made of an amorphous material comprising silicon oxide, silicon nitride, phosphosilicate glass or borophosphosilicate glass.
14. The method of claim 1, which further comprises masking the step during the implanting to prevent atomic species from being implanted into the step.
15. The method of claim 1, wherein the implanted zone is formed as a zone of weakness, and the method further comprises:
bonding a receiving substrate to the implanted face of the wafer; and then
supplying energy to the zone of weakness to detach the film from the wafer to transfer it to the receiving substrate.
16. The method of claim 15, which further comprises forming a bonding surface on the wafer and removing material from the periphery of the receiving substrate to provide a bonding surface that is substantially identical to that of the wafer.
17. The method of claim 15, wherein, after detaching the film from the wafer, the method further comprises selectively implanting atomic species through a face of the wafer but not through the step to form an implanted zone at a defined implant depth with the film being defined between the face of the wafer and the implanted zone.
18. The method of claim 15, after detaching the film from the wafer, the method further comprises, one or more times, the following successive steps:
selectively implanting atomic species through a face of the wafer but not through the step to form an implanted zone at a defined implant depth with the film being defined between the face of the wafer and the implanted zone;
19. The method of claim 15, which further comprises conducting a cleaning or chemical etching operation after transferring the film, the operation conducted in such a way that wafer surface that remains after the transfer is provided at a quality sufficient to carry out a subsequent bonding operation to a receiving substrate for transfer of a further film from the wafer.
20. The method of claim 19, which further comprises forming a protective layer on the step to prevent atomic species from being implanted into the step, wherein the protective layer is also capable of protecting the step from the chemical agents used during the cleaning or chemical etching operation.
21. The method of claim 21, wherein, after the protective layer has been formed, the method further comprises growing an epitaxial layer prior to a subsequent implanting of atomic species.
22. The method of claim 1, wherein the wafer comprises an Si1-xGex layer on a substrate, x being between 0 and 1, and having a thickness sufficient to allow a plurality of films to be sequentially transferred from this Si1-xGex layer.
23. The method of claim 1, wherein the wafer comprises a Si1-xGex layer and an elastically strained Si1-yGey layer on a substrate, with x and y being between 0 and 1 and y being substantially different from x, and wherein the atomic species are implanted in the Si1-xGex layer.
24. The method of claim 1, wherein the wafer comprises a composite structure on a support substrate, the composite structure comprising alternate Si1-xGex layers and elastically strained Si1-yGey layers, with x and y being between 0 and 1 and y being substantially different from x, and the atomic species are subsequently implanted in an Si1-xGex layer.
25. The method of claim 24, which further comprises removing any remaining portions of the Si1-xGex layer after transfer of a film to prepare the wafer for subsequent operations.
26. A wafer for providing a film intended for applications in electronics, optics or optronics, which includes a peripheral zone having a smaller mean thickness than that of the wafer by about 1 micron or more, so as to form a step around the periphery of the wafer, wherein the step is coated with a protective layer in order to protect the step from being implanted with atomic species.
27. The wafer of claim 26, wherein the protective layer is made of amorphous material comprising silicon oxide, silicon nitride, phosphosilicate glass or borophosphosilicate glass.
28. The wafer of claim 26, wherein the wafer is made of bulk crystalline material or is in the form of a composite structure that includes crystalline materials.
29. The wafer of claim 26, comprising a support substrate, a buffer structure and an upper layer that is sufficiently thick to be facilitate transfer of a film therefrom, wherein the height of the step is equal to or greater than the thickness of the upper layer.
30. The wafer of claim 29, wherein the upper layer comprises Si1-xGex, optionally in combination with one or more layers of Si1-yGey with x differing from y and x and y being between 0 and 1, respectively.
Filed: Sep 6, 2005
Publication Date: Feb 1, 2007
Inventors: Cecile Aulnette (Grenoble), Ian Cayrefourcq (St. Nazire les Eymes), Carlos Mazure (Bernin)
Current U.S. Class: 257/618.000; 257/632.000; 438/458.000; 438/514.000
International Classification: H01L 29/06 (20060101); H01L 21/46 (20060101);


text:
Calendar (PDF version) 2022-23
Place-Based Education
Racial Equity Task Force
Careers at Hawbridge
Exceptional Children Department
Information for Homeless Students
Testing & Accountability
Read To Achieve
Jennifer Shelton
M.A., Slavic Languages and Literatures, UNC-Chapel Hill
B.A., Political Science and Russian, Magna Cum Laude, Vanderbilt University
Upper School Director (7-12)
Instructor, AP English Literature & Composition
Zack Champion
B.A., International and Comparative Politics, Appalachian State University
Social Studies 8, Civics
Virginia Danford
vdanford@hawbridgeschool.org
M.F.A., Acting, Pennsylvania State University
B.F.A., Theatre, West Virginia University
Claire Daniel
B.F.A., Design, UNC Greensboro
Art Education, Teacher Licensure Program, UNC Greensboro
Ashleigh Denny
M.A., History, UNC-Wilmington, currently attending
B.S., Education, History, UNC-Greensboro
AP Reader, Human Geography
Social Studies 7-8, Civics, AP Human Geography
Kevin Duke
AP Calculus, Math I, Math IV, Pre-Calculus
B.S., Mathematics, Cum Laude, Elon University
Math IV, Sports Math, Pre-calculus, AP Calculus
Jonathan Farmer
M.F.A., Poetry Writing, University of California at Irvine
B.A., English, Summa Cum Laude, UNC-Chapel Hill
ELA 7, English II
Charles Fiore
M.A., Writing, Northwestern University
B.A., Theatre Arts, Sewanee: The University of the South
English I, 7-8 Creative Writing
M.S., Science Education, Montana State University
Secondary Science Certification, University of Vermont
B.S., Geology, West Virginia University
Science 7, Earth and Environmental Science, AP Environmental Science
Robert Howes
Master of Planning in Public Affairs, Hubert H. Humphrey Institute of Public Affairs
B.A., History, University of Michigan-Ann Arbor
Social Studies 7, AP U.S. History
he/they
M.A.T., UNC Chapel Hill
B.S., Mathematics, North Carolina State University
Math II, Math III
Kierca Kimbel
B.A. Sociology with Teaching Certification, Berea College
Math 7, 8
Kristen Kowzan
M.A., Higher Education: Adult Developmental Education
B.A., Social Science with a Minor in Mathematics, Magna Cum Laude, Honors College, University of South Florida
Math I
Christopher Lipscomb
Master of Liberal Studies, Sociology: Cultural Studies, Fort Hays State University
B.A., Liberal Studies, Thomas Edison State College
Certificate, Outdoor Leadership-Wilderness Therapy, Southwestern Community College
Certificate, Forestry Management Technology/Natural Resource Specialist, Haywood Community College
Outdoor Leadership, Hawbridge Outdoors
Caroline Luther
M.A., History, Yale University
B.A., Summa Cum Laude, History and Political Science, Rutgers University
World History, American History, English IV
Tony Mayer
he/they/we
M.S., Ecology, UNC Chapel Hill
B.S., Botany and Horticulture, Summa Cum Laude, NC State University
Permaculture Design Certificate
Wilderness First Responder
Health & PE, HS Horticulture, 7-8 Sustainability
Jennifer McDuffie
M.A.T., Spanish, University of Georgia
B.S.Ed., Foreign Language Education – Spanish, Cum Laude, University of Georgia
Spanish 1, 3, 4; AP Spanish Language
Zoë Nahatis
M.Ed., School Counseling, UNC Chapel Hill
B.S., Psychology/Anthropology, Fordham University
Elizabeth Osborne
B.A., Interdisciplinary Studies, UNC Chapel Hill
A.A., Peace College
A.S., Nursing, Guilford Tech CC
LIFE 7-8, Yearbook, Internship Program
Ruth Pershing
B.A., Earth Science, Wesleyan University
Science & Math Education, Teacher Licensure Program, UNC-Chapel Hill
Science 8, Physical Science, Chemistry
Cameron Ratliff
M.A., English Literature, UNC-Greensboro
NC Teach at NC State, High School English Teacher Certification
B.A., English & Anthropology, with Highest Honors and Highest Distinction, UNC Chapel Hill
Assistant Director, Business and Communications
Liz Stabenow
M.A., Education, University of Phoenix
M.E.M., Conservation Biology, Nicholas School of the Environment, Duke University
B.A., Natural Sciences, Bard College at Simon's Rock
Science 7-8, Biology
Sara Walls
B.A., English, University of Mary Washington
ELA 8, Creative Writing, English II
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School Performance Grades
2020, 2021 - No Score or Letter Grade. For 2019, The Hawbridge School Performance Score was a "B" (77). In 2018, The Hawbridge School Performance Score was a 74 (70-84=B). In 2017, The Hawbridge School earned an achievement score of 77. 2016's grade was 74. 2015's grade was 81. 2014's grade was 82. Click to view full report cards.
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redpajama_set_name: RedPajamaCommonCrawl


A Father's Day Rant – Aaarrgh!
Another Hallmark Holiday is upon us. People are scurrying to grab a Father's Day Card from the miniscule selection at the local card store. As I peruse the cards for my own father, I come across an interesting design. It is a tad unusual Father's Day card with a flower design and letters shaped like curls. Upon closer inspection, the title of the card says, "For you Mom on Father's Day." I am flabbergasted. Is it too much for our society to recognize us fathers holding it down on the one small day in which we are to be celebrated? Apparently it is.
Granted, there are deadbeat dads amongst us. And for another day I shall rant about them as well, but today, on Father's Day, we are to relish those things a male figure brings to his kids, the bond the father has created with his sons and daughters, or proud feelings exhibited by his kids as they hand daddy a five dollar plastic trophy from Target claiming "#1 Dad!" How about the yearly excursion to Red Lobster to treat dad to his favorite meal? It doesn't take much to please a man. You won't get too much push back about the type of gift on a day like Father's Day. In fact, you'll probably get none. Just give him his day.
Most of us real fathers, not the sperm donors, are offended when we see cards congratulating mothers on being "fathers" to their kids. Facebook and Instagram will provide millions of shout-outs to the women taking on the male role. We are offended because it continues to minimize an important role in life. God designed fathers for a reason and that reason has been manipulated, altered, and scrambled to an unrecognizable definition. It is common place in many communities that the father barely has a reason for existence although people's mouths say otherwise. Don't pretend the father has an important role to the family then conflict it by giving accolades to the single mother. We have to nip this in the bud if we want healthy communities and our children to respect and desire a male role model in their lives.
If my rant is offensive so be it. Not as a disrespect, but as a measure to gain respect. I am a single father who wants my voice to be heard. I desire men all over our country to stand together and demand the respect as a father – through all of our successes and misfires. If we stand before you, our female counterparts, and work in unison, there is nothing we can't do together. We all stand in agreement with this ideology. Therefore, do me a favor and kindly give us our 15 minutes of glory alone. We are simple creatures that need to feel important every once in a while.


This article was published 19/2/2015 (1520 days ago), so information in it may no longer be current.
History is important. Not just for the sake of filling some time in school. Not just for giving historians something to do. It's important for us all in our shared journey of discovering moral truth in our world. Knowing events of the past can guide, inspire, and give us pause to consider and reconsider how we think, feel and act.
Perhaps most important for me is how history allows me to better understand the people with whom I share this world. As Benjamin Disraeli once intimated, history is principally biography -- it is the stories of people.
Canada is, broadly speaking, a transcultural society. The merging and melding of histories, traditions and worldviews of people from around the world are lending to the development of a Canada that is, essentially, transcultural. Some communities may believe they are culturally homogenous, but immigration, foreign workers, social media and other factors have brought the presence of other peoples' ethno-cultural backgrounds into our lives in a multitude of ways.
We may hide from this phenomenon. We may even resent it. But this is the society in which we co-exist. A significant part of Canadian society is our First Nations, Métis and Inuit peoples.
Perhaps most important for me is how history allows me to better understand the people with whom I share this world. As Benjamin Disraeli once intimated, history is principally biography — it is the stories of people.
Recently, the University of Winnipeg Students' Association circulated a letter stating their desire for a new campus-wide requirement for all undergraduate students in order to graduate, namely the successful completion of one course (three credit hours) with a focus on indigenous content. Indigenous history, culture and experience were the principal referents in the UWSA statement.
The University of Winnipeg has strived to be inclusive of the Canadian indigenous experience. There are benefits for us all with this sort of institutional initiative. It has increased the entry to and successful completion of university programs by indigenous peoples; campuses may be sites of mutual understanding and appreciation amongst all students; and, successful university experiences for indigenous students may lead to increased participation in the labour market.
But there is a more fundamental issue that may merit discussion. The University of Winnipeg is home to a growing number of indigenous students, but that is one portion of their undergraduate student population. So one may ask: Would an indigenous-content requirement be relevant for all students regardless of their respective ancestries?
This is where the UWSA statement may lead to valuable discussion. The UWSA cites "commitment to increasing access to post-secondary education for indigenous learners." As noble as this commitment may be, the intent of the UWSA statement may be understood as a benefit for all students. We need equality in our learning experiences, but little of the Canadian indigenous experience has been a part of the history made available to us compared to that of non-indigenous peoples. We need balanced public consciousness, yet indigenous issues are too frequently fraught with tension, despair and resentment. And initiatives such as the one suggested by UWSA would help us to live harmoniously, with mutual recognition across cultural groups.
Making this course required of students will not end racist attitudes, but it may rightfully be seen as a means of affecting the transcultural dialogue amongst Manitobans. Not only can this be one of the few developments that have affected public discourse in this area, but in professional areas such as education, social work, health and law, the potential benefits may be crucial.
When I first entered university 20 years ago, initiatives such as this in a large university were unheard of. The UWSA should be applauded for their initiative. After all, the Canadian indigenous experience is a part of our shared history.
Frank Deer is an assistant professor and director of indigenous initiatives in the faculty of education at the University of Manitoba.


text:
Dotsy Diane Lloyd Boineau papers
Scope and Contents Consisting of correspondence, scrapbooks, programs, and newspaper clippings documenting Boineau's association with United Daughters of the Confederacy but also with such other organizations as Columbia Junior Chamber of Commerce [Jaycees]; S.C. Chapter of the Arthritis Foundation; S.C. Heart Association; S.C. Council for the Common Good; Y.W.C.A. of Columbia; Woman's Club of Columbia; S.C. Federation of Women's Clubs; Boys' Clubs of Greater Columbia; Columbia Museum of Art; Columbia Festival...
John Carl West Papers
Identifier: SCU-SCPC-JCW
Abstract John West served his state and nation well as a soldier during World War II, as a member of the South Carolina Senate, 1955 to 1966, as Lieutenant Governor, 1967 to 1971, as Governor, 1971 to 1975, and as United States Ambassador to Saudi Arabia, 1977 to 1981. Returning from Saudi Arabia, West practiced law, lectured on government and the Middle East at the University of South Carolina, served as Chairman of the Board of the Seibels Bruce Insurance Company, and engaged in a number of...
Dates: c. 1840s, c. 1857, 1905, 1924, 1938-2004
Lottie D. Hamby Papers
Identifier: SCU-SCPC-LDH
Dolly Hamby was a partner in the all-female, Columbia-based Bradley, Graham, & Hamby Advertising and Public Relations Agency. The firm worked for high-profile political candidates and businesses, and on issues of public interest.
Philip G. Grose Papers
Identifier: SCU-SCPC-PGG
Abstract Philip Gibbs Grose, Jr., was a journalist, government administrator, speechwriter, public affairs aficionado, and author. Grose devoted his life to writing about and serving the government of South Carolina. Throughout his life, Grose's words and actions documented South Carolina's move to become a modern state, but his name and words were hidden behind the guise of a political journalist and government bureaucrat until late in his life when he became a published author. His papers span his...
WIS-TV news collection
Identifier: COD0000005-ACC 1984-0001
This collection contains outtake footage shot by the news crews of Columbia, South Carolina's NBC affiliate from 1959 to 1980. It includes 16mm color and black and white films, both sound and silent, documenting people, events, and the political and cultural history of South Carolina. The collection also contains teleprompter scripts for broadcasts dating from 1963-1979.
Found in: Moving Image Research Collections (MIRC)
Subject: South Carolina -- Politics and government -- 1951- X
Names: McNair, Robert E. (Robert Evander), 1923-2007 X
South Carolina Political Collections 4
Moving Image Research Collections (MIRC) 1
South Caroliniana Library 1
Elections -- Southern states. 2
Elections -- United States -- History. 2
Liquor laws -- United States. 2
Politicians -- United States. 2
School integration -- United States. 2
Women -- Political activity -- United States. 2
Advertising -- Social aspects. 1
Advertising agencies -- South Carolina -- Columbia -- History. 1
Advertising agencies -- United States -- Columbia -- Management. 1
Advertising, Political -- United States. 1
African Americans -- Education -- Southern States. 1
Alcohol -- Law and legislation. 1
All-America City Award. 1
Bars (Drinking establishments) -- Law and legislation. 1
Businesswomen -- United States. 1
Civil rights. 1
Columbia (S.C.) 1
Columbia (S.C.) -- Commerce. 1
Columbia (S.C.) -- History. 1
Legislators -- United States. 1
Local elections. 1
Motion picture journalism. 1
Music -- Societies, etc. 1
Oral history. 1
Orangeburg Massacre, Orangeburg, S.C., 1968. 1
Political campaigns -- United States. 1
Segregation in education -- United States. 1
Self-employed women. 1
Television news. 1
Vietnam War, 1961-1975. 1
Women -- Societies and clubs. 1
Women-owned business enterprises -- United States. 1
Youth -- Political activity -- United States. 1
Hollings, Ernest F. 4
Russell, Donald Stuart, 1906-1998 3
Thurmond, Strom, 1902-2003 3
West, John Carl, 1922-2004 3
Carter, Jimmy 2
Atwater, Lee (Harvey LeRoy Atwater) 1
Badische Anilin- & Soda-Fabrik. BASF 1
Bates, Lester L., Sr. 1
Boineau, Dotsy Diane Lloyd 1
Bradley, Jane H. 1
Byrnes, James F. (James Francis), 1882-1972 1
Citadel, the Military College of South Carolina 1
Citizens Association of Beaufort County (S.C.) 1
Columbia Junior Chamber of Commerce 1
Concerned South Carolinians for a Better Environment 1
Connally, John Bowden, 1917-1993 1
Cosmos Broadcasting Corporation 1
Culbertson, John Bolt 1
Democratic Party (S.C.) 1
Dole, Robert J., 1923- 1
Dorn, William Jennings Bryan, 1916-2005 1
Draper, William F., 1912-2003 1
First Baptist Church (Columbia, S.C.) 1
Fowler, Donald L. (Donald Lionel) 1
Goldwater, Barry M. (Barry Morris), 1909-1998 1
Graham, Cora Doten 1
Grose, Philip G., 1938- 1
Hamby, Lottie D. (Dolly) 1
Hammond Academy (Columbia, S.C.) 1
Kennedy, John F. (John Fitzgerald), 1917-1963 1
Kline Iron and Steel Co. (Columbia, S.C.) 1
McNair, Josephine 1
Morris, Earle E., Jr. 1
Ravenel, Charles DuFort, 1938- 1
Russell, Virginia Utsey 1
Sanders, Alex 1
South Carolina Environmental Action, Inc. 1
South Carolina Federation of Women's Clubs 1
South Carolina Tricentennial Commission 1
Thurmond, Nancy Moore 1
United Daughters of the Confederacy. South Carolina Division 1
University of South Carolina 1
WIS-TV (Firm) 1
Woman's Club of Columbia (Columbia, S.C.) 1


74 Eastern Road by Gurner was a sell-out success after just three days on the market. Designed by a formidable team including Elenberg Fraser, David Hicks and Jack Merlo, the development is a response to Melbourne's property market gearing towards larger apartments for the premium market. We were tasked to strategise and design its branding and marketing collateral, to reflect Gurner's vision for luxurious living.
Sensuous and aspirational, the campaign reveals the affluent lifestyle of Gurner property owners, people with impeccable taste and the highest standards.
The campaign celebrates the mindset of the avid collector, individuals who expect nothing less than the very best.


WhoSirMe comments on My uncle visiting from the Philippines has never seen snow. This is what happened today.
My aunt is Filipino and used to live in Seattle (her whole family still does), do you know her?
No /s I opened this post and checked to see if it was someone i was related to.
I was absolutely semi joking! I'm not Filipino myself (or American), but honestly it doesn't feel all that far fetched that they'd know each other/know of each other if they lived in similar areas of Seattle.
Ha! This is so Filipino. If you're a Filipino and will go to U.S., your relatives will require you to visit a (veryyyy distant) relative who's probably on a different state than where you're going.
I'm not Filipino so I don't speak Tagalog (assuming that's Tagalog), sorry!


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DR. HYMANDR. HYMAN
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Dr. Hyman's Haiti Journal – Day 5: Shaken Again
PLEASE NOTE: THIS blog is a reprint of an article that appeared on Huffington Post.
Days 4 & 5
I slept through the aftershock this morning, a small 6.1 earthquake that has had no real impact because everything that could be destroyed was already destroyed. But the aftershocks that will ripple through the lives of the Haitian people will last for decades. They will for Mitch, who I met the first morning at the hospital grounds. He was laying in the back alley, unattended for four days except for a small bandage around his knee. He called out softly in English for me to stop, to help him. He had not eaten nor drank water since the quake and was still smiling at me. He lost his entire family — a wife and three children — and home. He was alone with no one to care for him, unlike some of the other patients who were tended to by their less-wounded family members, bringing what food and water they could.
I kneeled down and opened his dressing. A quart of foul pus spilled out from his knee, which was shattered and crushed. Pier, my wife, is an orthopedic surgeon. She came over and said he needed to be the next surgery case.
George Boutin, my father-in-law, didn't have the heart to remove his mangled fingers and hand. He reconstructed them so the musician could, perhaps, play music again. Maybe. Perhaps. Hopefully one day.
But the volume of trauma and mangled limbs is staggering.
I saw him a few days later, finally inside the make-shift pre-op area — still with almost no water, food, antibiotics nor pain medication. He smiled again when he saw me and grabbed my hand.
I brought General Keen from U.S. Southern Command, who is leading the military relief and support effort for the Haitian people. I showed him the hospital which, seven days after the quake, still had no food or water for the patients (nor the doctors, nurses and staff). We still didn't have stable power and were operating in dark rooms, the batteries of our flashlights dimming or dead. We still operate with hacksaws. Supplies are trickling in, but we have more doctors and staff now than supplies. This morning surgeons were operating without gowns or gloves. And without lights, again.
Later, one of the patients we operated on the first day — a woman with a beautiful smile, pony tail and an orange t-shirt — was septic and having seizures that wouldn't stop. Maggots crawled out of the stump of her recently amputated leg. We (Partners in Health) are working to get the hospital up and functioning with food, water, supplies, power, sanitation, and security (we made significant progress after I emailed my contacts at the State Department — General Keen showed up after), but we have no communications internally and little organization. I ran over to the Norwegian team's tent to find a bottle of seizure medication. They had finally set up after a week, getting their supplies and opening one mobile operating suit. The anesthesiologist gave me a bottle of phenobarbital. I looked down on the operating table and saw the surgeon cutting off a man's leg above the knee. I realized it was Mitch, my friend from my first day, who now — seven days after the earthquake — was finally in the operating room.
My heart cracked and the tears came all day. Through the exhaustion, a of lack sleep and food, I had spent four days of getting to know these extraordinary people. Their spirit is indefatigable despite 200 years of natural and political disaster. With each story, the tears came: the young man asking for a job so he could bring food to his wife and children, who hadn't eaten in a week; the well-known Haitian musician who, rather than escape a crumbing building, rushed up to the third floor to rescue a baby. He carried the baby in his arms, but lost most of his fingers as he protected the baby. George Boutin, my father-in-law, didn't have the heart to remove his mangled fingers and hand. He reconstructed them so the musician could, perhaps, play music again. Maybe. Perhaps. Hopefully one day.
Today, the local hospital staff (nurses and workers) came back, at least those who were alive. They came even though their families were dead, even though they still slept on the street because their homes were in rubble, and even though most hadn't eaten food for days. After 10 straight hours of operating in hot and dark rooms, the dark skinned nurses looked pale and weak. They worked without food or drink all day. In a back room of the main storage area I found a few cases of water meant for 5,000 people. I brought a few to the operating room to refuel the staff at 8 p.m. last night.
General Keen arrived to inspect the scene. The military are here to create life, support life, to save lives, to bring relief in a country where there is no local infrastructure. The NGO's (non-governmental organizations) and United Nations struggle to get organized in the chaos. Their kindness and compassion made me cry again. They are organized and willing and focused. They are not here to provide security or make us safe, because there has not been one incidence of violence. There are only those gently, graciously asking for water or food or supplies or shelter from the sun.
This hospital was a disaster before the disaster. The Americans built the national public hospital in the 1930's and there has been no support or funding from the Haitian government since then, except a small budget to pay salaries. I know we can raise the $30 million to rebuild the hospital, but wonder if it will be properly allocated because of the chaos in the government.
There is no remaining organization in Haiti to help us get the power back on or provide food and water for patients in the hospital. There is no one to get us medical supplies, or sanitation for the 4,000 people on the hospital compound, or get some of the overload of 1,000 surgical patients lifted to other sites. But General Keen's 82nd airborne is organized, compassionate and capable of helping us build the National Hospital into what it was meant to be — the nation's center for caring for the poor.
But today, when I got back to the hospital, all the patients that we had moved into the hospital's remaining buildings were outside — strewn all over the hospital grounds. The aftershock shook them and frightened them. Those who had just had their legs cut off jumped on one foot out of the buildings. Others had their families drag them out for fear of getting caught in another collapsed building. The trauma is so deep and vast that even after we had the buildings cleared by the U.S. Army Corps of Engineers and announced it to all the patients, most were still to afraid to enter the buildings. As a result, many died from dehydration in the heat and sun. After five days of trying to rebuild the hospital, we had to start all over again.
But we did, and the people kept smiling back at me as I walked by.
Please donate to Partners in Health at http://www.pih.org. They are integrated with the Haitian health care system and can create a sustainable system from the ashes and sorrow.
Please share your thoughts by leaving a comment below.
To your good health,
Mark Hyman, MD
To see more of Dr. Hyman's photos from Haiti go to:
http://www.flickr.com/photos/drhyman/sets/72157623158238557/
Beware: Some of the images are graphic.
Wishing you health and happiness,
Mark Hyman, MD is the Founder and Director of The UltraWellness Center, the Head of Strategy and Innovation of Cleveland Clinic's Center for Functional Medicine, and a 12-time New York Times Bestselling author.
If you are looking for personalized medical support, we highly recommend contacting Dr. Hyman's UltraWellness Center in Lenox, Massachusetts today.
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First of all, Happy Halloween! I wish you lots of chocolate and the opportunity to watch It's the Great Pumpkin, Charlie Brown. Or whatever your favorite Halloween movie is!
Halloween wishes aside, as the title suggests, the real purpose of this post is to let you know that I have a definite release date for my upcoming novel! I've been promising it as "mid-November," and that turned out to be more literal than I thought it might. I've settled on a release date of November 15th. I had to tell you so that you can mark your calendars… 😉 and so that I'm committed to it, by virtue of having told everyone!
The Wanderers is currently listed on pre-release (ebook only) through Smashwords, and on November 15th it will be available in paperback and Kindle through Amazon.
I also have to say that I am very grateful to the wonderful book blogging community, as several bloggers have kindly agreed to help me spread the word. Along with scheduling my release date, I'm scheduling interviews, guest posts and giveaways for after the release. I'll keep you posted when they happen–although I highly recommend you follow all these bloggers anyway!
And I am also grateful to all of you for coming along for the ride. The talking cat and I both thank you!
Can't wait to get it-its on my calendar!
Congratulations, Cheryl! Can't wait to host your guest post — and read the finished novel! I just noted on my calendar to buy it on the 15th!
I was mostly kidding about the calendar… 😉 Looking forward to the guest post too, and I hope you enjoy the book!
Smashwords is wordwide, but prereleases can't be bought until the release date.
Heehee, I'm just going to be a gigantic dunce now but if you can't buy prereleases until the release date then I don't really get it! Can somebody please take pity on my dumbass and chuck me a bone. What is Smashwords exactly??
Thanks in advance of lots of useful info.
You're not being a dunce!
Smashwords is an ebook distributor. It allows you to distribute your ebook to multiple online retailers at once (at a small percentage cut per sale) as well as selling it via their own site.
Yeah. They could stand to be clearer about that. I was a bit surprised to see that the book couldn't be pre-ordered on Smashwords itself along with the other retailers who offer it too. Since they're apparently working on revamping their entire storefront, though, that might be a functionality they're going to add in the redesign. I hope so. It'd work into most people's initial expectations and make the site more intuitive if nothing else.
Eeeeeee! Official release date announcement! Congratulations! <3<3<3<3 Looking forward to when your book's out! ❤ (I do want to point out that Smashwords doesn't allow you to preorder the book. I'm hoping that's a functionality they'll be adding in future.) Yaaaaaaay on release date setting! <3<3<3<3 So exciting!
Something like that. Maybe it's something they'll work on during the site redesign they mentioned starting to work on. It's still only a beta feature, after all.
And yes me too! It's a functionality I deeply appreciate.
That's fantastic! Looking forward to buying it on Amazon as soon as it's released. Congratulations.


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Home News Education Funding Will school funding reform succeed this time?
Will school funding reform succeed this time?
By Sarah Earle
Members of the School Funding Commission are confident that their work will go further than past attempts to address school funding inequities. Nevertheless, the challenges are clear.
Part Four of a Five-Part Series
The young people attending school in Claremont in 1991, the year it sued the state over the way it pays for education, are well into adulthood now. The youngest of them are old enough to pay property tax bills and have school-age children. And those who are still in New Hampshire know that many of the inequities their families experienced in those days persist nearly 30 years later.
There is little dispute over that reality. The very existence of the Commission to Study School Funding is evidence, said Rep. Mel Myler (D-Contoocook), who sponsored the bill that created the Commission.
"I think there was a recognition on the part of all legislators, this issue needed to be addressed," he told Reaching Higher last month.
As they present their final report representing a year of research and deliberation and prepare to incorporate its recommendations into legislative proposals, Myler and other Commission members are optimistic about the prospects for their work. Student and taxpayer equity are bi-partisan issues, leaders of the Commission work groups explained in a recent interview. Though consensus on fiscal policy is never easy, there are numerous options lawmakers can explore, they said.
No matter how clear the need for school funding reform, however, challenges undoubtedly lie ahead.
A time-honored principle
Working with an independent research group, the Commission found that New Hampshire's method of paying for schools primarily through local property taxes is the most regressive funding system in the country, leading to extreme disparities between communities.
That finding comes as no surprise. The Claremont lawsuits hinged on the same argument. Nevertheless, every attempt to change the way the state pays for its schools bumps up against one reality: Broad-based taxes are anathema in New Hampshire. Every governor for the past 50 years — with the exception of Jeanne Shaheen in her third term — has taken "the pledge," promising to veto any sales or incomes tax that makes it to their desk.
"The pledge" reflects the public's distaste for a sales or income tax. The Commission's public engagement work underscored that sentiment. A survey conducted by the University of New Hampshire Survey Center found minimal support for a sales or income tax.
Accordingly, the Commission has not proposed a broad-based tax.
"The conundrum that we found was this," Myler said. "Although there's a concern about the overreliance on property taxes … there's not a hue and cry for another tax."
Elusive Solutions
In fact, the Commission's report stops short of recommending any particular fiscal policy, but one approach that may gain traction is the uniform statewide property tax proposed by American Institutes for Research (AIR) in the analysis it conducted for the Commission. That proposal increases the statewide property tax, decreasing local property taxes for the majority of towns and boosting the amount of aid that comes from the state. For such a proposal to work, towns who raise more through the statewide property tax than the "adequacy" rate set for their schools would not get to keep the excess.
And that change may not go over well in the Legislature, where Republicans recently won back control of both chambers.
"If money goes from one town to another, that's not the way it should work," said Jim Grenier, a former school teacher from Lempster who served in the Legislature from 2012-2018. "I don't think it's going to resolve the problem either."
An independent who ran as a Republican and crossed party lines on several education bills, Grenier is also concerned about any proposal that uses current per pupil spending as a baseline. "That's a really slippery slope. A district can make bad decisions that become very costly. Should the state be responsible for fixing bad decisions?"
Grenier does, however, believe the state should shoulder a greater share of the cost of education. That's a sentiment held by many. More than half of respondents to the UNH Survey conducted for the Commission said the state should increase its funding for local education, and while Democrats were considerably more likely to support increased state funding, nearly 30% of Republicans also agreed.
The state currently funds schools at a level of about $3,700 per student, plus additional aid for students in certain categories such as special education, far less than the average per pupil spending of about $17,000.
To boost state aid without increasing the statewide property tax, legislators have often relied on business taxes. That strategy may be a hard sell as well.
"The tax rate for businesses here is pretty high," said Val Zanchuk, who owns Graphicast, a manufacturing company in Jaffrey, and serves on the Commission to Study School Funding. "Businesses are always aware of the opportunity the legislature takes to tax the entire business community. … I think you'll probably hear a lot of screaming and hollering about business taxes being increased."
On the other hand, business owners understand firsthand the value of a well-educated and stable workforce, said Vanchuk, former chair of the Business and Industry Association of New Hampshire. Manufacturing companies in particular are desperate to attract and retain workers at a time when several thousand young people are moving out of the state every year, he said.
Like other members of the Commission, Vanchuk believes a shift in thinking is the key to change.
"I don't have any children. Every dollar that I've paid in taxes is supporting someone else's kid," he said. "But I don't think in terms of my town, I think in terms of my state. Equity of opportunity is incredibly important from an economic standpoint."
Too far, not far enough
While the philosophy of equity was broadly embraced by the Commission, not all members agreed on all of its recommendations. Rep. Rick Ladd (R-Haverhill), the one Commission member who voted against approving the report, filed a minority report emphasizing several key issues. The estimated cost model created by the Commission shouldn't include expenses such as sports and other extracurricular activities, he said. Additionally, performance indicators adopted by the Commission as part of its outcomes-based model are insufficient in measuring student achievement, he said.
In member statements included in the report, other members expressed disappointment that the Commission hadn't adopted a clear fiscal remedy for tax inequities and voiced concerns about a possible increase to the statewide property tax.
"A significantly increased SWPT has negative impacts, which the commission has tried to address through recommended tax relief and tax deferral programs," former State Senator Iris Estabrook wrote in her member statement. "These would need to be extremely robust to create a funding stream I would endorse."
Hardships and Hope
All of this comes at a time of severe hardship for schools and communities. The coronavirus pandemic has created ongoing budgetary pressures, teacher shortages, and drops in enrollment that may affect funding in the coming biennium. Many taxpayers are under duress due to job loss and other economic strain, and state funds have taken a hit from the economic downturn as well.
At the same time, the pandemic has highlighted both how profoundly communities rely on public schools and how deep the disparities are within and among them.
In spite of the obstacles, Commission members hope their work will lay the foundation for alleviating those disparities and better supporting schools and students.
"These kids are our kids. You have to talk about our kids collectively," Zanchuk said. "To get people out of that my-interest-first mentality — that's hard. … But we're going to have to get people to start thinking about what's best for New Hampshire."
Read all of our coverage of the School Funding Commission's Final Report:
School Funding Commission to Publish Final Report
The School Funding Commission's Report At a Glance
PODCAST: Quest for Equity
VIDEO: "Different School, Different World: An Introduction to School Funding in New Hampshire"
Read more about school funding in New Hampshire:
"There are elements that need to be changed": School business managers reflect on school funding
Manchester English Learners Request Fair Funding
"It's penny wise and pound foolish": Teachers reflect on how disparities in pay affect culture, instructional quality, and morale
Community on the Brink: Idyllic New Hampshire Town Beset By School Budget Battles
Commission begins reexamining public school funding
Claremont Decision
Commission to Study School Funding
Sarah Earle
NH Education Roundup, Dec. 7, 2020
NH Education Roundup, Nov. 23, 2020
Reaching Higher NH is a nonpartisan 501c3. Our mission is to provide all New Hampshire children with the opportunity to prepare for college, for immediate careers, and for the challenges and opportunities of life in 21st century NH, by serving as a public education policy and community engagement resource for New Hampshire families, educators, and elected officials.
Contact us: staff@reachinghighernh.org


Most everyone will agree that gadgets that help improve day-to-day productivity are essential in the fast-paced business world. Your components could be to blame—hardware that's due for an upgrade. Setting up a speedier system could be as simple as updating your USB ports with an external dock, or you could step up to speedier storage.
Read on to find out how these computer accessories can help you in increasing your productivity.
#1. If your Notebook is heating up very fast and producing weird sound you can try this 360 degree rotating large USB fan metal series or notebook cooling pad.
#2. Use OTG pen drives if you need more space on your Android smartphone or tablet or want to play tunes from another device, or view videos and pictures stored elsewhere.
#3. If you don't like that old bulky mouse, then you can try these ultra slim wireless optical mouse or you even try some good combo sets with keyboard at a very low cost.
#4. During work it's important for you to take regular break or you can listen to some good music as it soothes your mind and helps in cultivating more positive thoughts.
#5. Your laptop or notebook is your investment and thus it's necessary to keep them update and free from any damage.
#6. Sip morning coffee while checking up your mails, let children play their action games during the day and study the e-modules and use it for reading at night be it an ebook on your laptop or the all time bestsellers from your library.