Gate equivalent

A gate equivalent (GE) stands for a unit of measure which allows specifying "manufacturing-technology-independent complexity" of digital electronic circuits.
For today's CMOS technologies, the silicon area of a two-input drive-strength-one NAND gate usually constitutes the "technology-dependent" unit area commonly referred to as gate equivalent.
A specification in gate equivalents for a certain circuit reflects a complexity measure, from which a corresponding silicon area can be deduced for a dedicated manufacturing technology.
In digital circuit design, a dedicated "standard cell library" is employed for each manufacturing technology (e.g., CMOS). The standard cell library comprises many different logic gates, for example a NAND gate. For each logical type of logic gate, e.g., a two-input NAND, there usually exist different physical realizations in the standard cell library, for instance with different output drive strengths.
Basically, a two-input drive-strength-one NAND gate in CMOS technology consists of four transistors. If higher output drive strength is required, an additional output driver stage of four transistors is added.