this invention provides a method for chamber conditioning with deposition mode . the method includes performing organic gas introduced constantly into a chamber , wherein said organic gas comprises halogen . adhesive polymers are formed from said organic gas and particles in the chamber , and deposited onto the wall of the chamber to form heavy polymers subsequently . it is necessary to make a similar chamber condition for manufacturing every batch of wafer . in other words , the development of a non - ignored pollution problem , which is increasing with batches of the manufacturing of wafers will not occur . by using said method of deposition mode , it is speedily and easy to decrease the amount of particles in the chamber for the requirement for wafer manufacturing .