a method for providing anti - static characteristics for polymeric , integrated circuit trays , which allows gaseous ions , such as nitrogen and argon , or metal ions , such as ti , li and al , to be implanted to a surface depth of 1 . 5 μm in ic trays . in addition to experiencing no dimensional changes during the antistaticity working , the ic trays have a uniform distribution of ions over their surfaces and range , in surface resistance , from 10 6 to 10 12 ω / cm 2 .