page_title: List of metal-organic chemical vapour deposition precursors
section_title: List
hierarchical_section_title: List of metal-organic chemical vapour deposition precursors / List
caption_attribution_description: English: Ni(tmhd)2,Nickel(II) bis(2,2,6,6-tetramethyl-3,5-heptanedionate), Ni(OCC(CH3)3CHCOC(CH3)3)2
context_page_description: In chemistry, a precursor is a compound that contributes in a chemical reaction and produces another compound, or a chemical substance that gives rise to another more significant chemical product. Since several years metal-organic compounds are widely used as molecular precursors for the chemical vapor deposition process. The success of this method is mainly due to its adaptability and to the increasing interest for the low temperature deposition processes. Correlatively, the increasing demand of various thin film materials for new industrial applications is also a significant reason for the rapid development of MOCVD. Certainly, a wide variety of materials which could not be deposited by the conventional halide CVD process, because halide reactive do not exist or are not volatile, can now be grown by MOCVD. This includes metals and different multi-component materials such as semiconductor and intermetallic compounds as well as carbides, nitrides, oxides, borides, silicides and chalcogenides.
caption: Ni(tmhd)2,Nickel(II) bis(2,2,6,6-tetramethyl-3,5-heptanedionate), Ni(OCC(CH3)3CHCOC(CH3)3)2