Logic state transition detection circuit for CMOS devices
BACKGROUND AND SUMMARY OF THE INVENTION 
     The present invention relates to a logic state transition detector circuit for CMOS devices, and specifically, to detector circuits for detecting address changes in asynchronous CMOS RAM devices for providing timing signals to the internal logic in the memory device. 
     The sequence of operation for access of an asynchronous RAM begins with address transition detection. The address transition detectors of the prior art typically utilize static pulse generators incorporating an odd number of inverters coupled to NAND or NOR gates for generating an output pulse. The use of NAND or NOR gates, however, require a minimum number of devices to implement the logic at the expense of speed and chip surface area. 
     It is therefore, an object of the present invention to provide an address transition detector requiring a low number of devices. 
     It is another object of the present invention to provide an address transition detector requiring less space and having greater speed. 
     These and other objects of the present invention are obtained by providing an address transition detector (ATD) requiring only 20 devices to implement the necessary logic. The ATD includes two pairs of serially connected P-channel devices connected between a power supply and a common first node. The first pair of transistors detect a positive transition of an address change while the second pair of transistors detect a negative transition of an address change. When detecting a transition, the respective pair of transistors will deposit a charge on the common first node. An inverter is also coupled to the common first node such that its output provides a low output pulse when the common node is charged to a high logic level. However, an additional inverter may be provided at the output such that the output provides a high output pulse in response to an address change if desired. 
     Also included in the invention is a latching transistor which holds the common first node to a high logic level after being charged to a high state. The node will remain at this level until a reset signal is provided by a delay circuit comprising an odd number of inverters, typically three in number, coupled between the output of the inverter and the gate of an N-channel transistor. The N-channel transistor provides a reset signal to the common node based on the delayed output signal. 
     By utilizing the combination of this feedback delay with the pairs of P-channel detector transistors, neither NOR or NAND gate are required in the detection circuitry, and thus, a lesser number of devices are required. As a result, less space is required to implement the detector circuit, which may also enhance the speed of the device. 
    
    
     BRIEF DESCRIPTIONS OF THE DRAWINGS 
     FIG. 1 is a schematic diagram of a prior art detector circuit. 
     FIG. 2 is a schematic diagram of a preferred embodiment of the present invention. 
    
    
     DETAILED DESCRIPTION OF THE INVENTION 
     Referring to FIG. 1, an example of the prior art detector is of a static design and includes at its input, three inverters 10, 12, 14 coupled in series having an input portion leading from an external address pin A and an output portion providing a complement of the address signal A. The output signal 15 of the first of the three inverters 10 is coupled to the input 16 of a delay circuit 18 comprising an odd number of series connected inverters. The output 20 of the delay circuit 18 is coupled to the inputs of both a first input of a NAND gate 22 and an NOR gate 24. 
     The output line 15 of the first inverter 10 is also directly coupled to the second inputs of the first NAND gate 22 and the NOR gate 24. The output of the NOR gate 24 provides the input to a fourth inverter 26. The outputs of both the first NAND gate 22 and the fourth inverter 26 provide the input of a second NAND gate 28 which in turn provides a high timing pulse when the detector has been enabled. 
     The present invention as shown in a preferred embodiment in FIG. 2, includes three serially connected inverters 50, 52, 54 similar to that of the prior art. Connected to the inverters are two pairs of serially connected transistors, 56 and 58, which include P-channels 62, 64, 66, and 68. The gates of the P-channels 62 and 68 are both coupled to the output of the second of the inverters 52, while the gates of P-channels 64 and 66 are respectively coupled to the outputs of the first and third inverters 50 and 54. The sources of the P-channels 62 and 66 are coupled to a power supply 70 and the drains of the P-channels 64 and 68 to a common first node. The drain of 62 is coupled to the source of 64, and likewise, the drain of 66 is coupled to the source of 68. 
     A first output inverter 74 is included for providing a low logic timing pulse. Its input is coupled to the common first node and an output coupled to a second node. Connected to this second node can be a second output inverter 75 should a high logic timing pulse be required. Also coupled to the second node is a latching P-channel transistor 80, with the gate of the P-channel 80 coupled to the second node, the source coupled to the power supply 70 and the drain coupled to the common first node. 
     The output of the first output inverter 74 is also fed back into a delay circuit 84, the latter comprising an odd number of inverters. The number of inverters provided in the delay circuit 84 is dependent upon the width of the timing pulse desired. The output of the delay circuit 84 is coupled to the gate of a N-channel reset transistor 86. The source of the reset transistor 86 is coupled to the common first node and the drain to a ground potential 90. 
     A pair of series coupled N-channel transistors 95 and 96 are coupled between the first node and ground potential 90 for providing a leakage current path for the detector circuit. N-channel 96 has its gate connected to the second node at the output so that the leakage circuit path is shut off when one of the P-channel pairs is active as a result of detecting an address change. This results in preventing a power drain through the leakage circuit during detection while still providing a leakage path when the detector is inactive. The second N-channel 95 is designed to have its ratio of width with respect to its length being less than one, thereby providing a high impedance current path. 
     The present invention generates the internal timing signals for the internal logic of the asynchronous RAM. The address signals are received initially by the first of the series of inverters 50. As the address changes state, a positive transition of the signal is detected by first pair of P-channels 56 and a negative transition by the second pair of P-channels 58 such that when the transition occurs, the first or second pair will conduct respectively to provide a charge onto the common first node. As the charge at the first node increases, the output of the inverter 74 becomes a low output signal. This results in turning on the latching transistor 80, thereby holding the common first node to a high potential until a reset signal is provided by the N-channel 86. 
     The reset signal is generated as a result of the low output of the second node propagating through the delay circuit 84 comprising an odd number of inverters. The actual number of inverters used in the delay circuit depends upon the width of the detector pulse desired. The output of the delay circuit 84 biases the reset N-channel 86 to an on state after it propagates through the delay circuit. This pulls the common first node low, thereby returning the output at the second node to a high output. An output pulse results having a width corresponding to the number of inverters in the delay circuit 84. 
     Although the present invention has been described and illustrated in detail, it is to be clearly understood that the same is by way of illustration and example only, and is not to be taken by way of limitation. An example of such is the substitution of P-channels for N-channels and vice versa in the above invention, as well as the substitution of the other types of transistors for those discussed above. Thus, the spirit and scope of the present invention are to be limited only by the terms of the appended claims.