Static random access memory with address transition detector
BACKGROUND OF THE INVENTION 
     1. Field of the Invention 
     The present invention relates to a static random access memory (SRAM) with address transition detector (ATD). 
     2. Description of the Related Art 
     The SRAM is described in, for example, IEEE Journal of Solid-State Circuits, Vol. SC-19, No. 5, October 1984, &#34;A LOW POWER 46ns 256kbit CMOS STATIC RAM WITH DYNAMIC DOUBLE WORD LINE&#34;, Sakurai et al., and 1987 IEEE Journal of Solid-State Circuits Conference DIGEST OF TECHNICAL PAPERS &#34;A 25ns 1Mb CMOS SRAMs&#34; Ohtani et al. The SRAMs discussed in these papers contain ATDs. 
     In this type of the SRAM, the output stage of a data output circuit is provided with a pull-up transistor for pulling up a potential at the data output terminal, and a pull-down transistor for pulling down the potential at that terminal. In accordance with the data read out from a selected memory cell, one of those transistors is turned on, while the other is turned off. Accordingly, a high level signal or a low level signal is derived from the data output terminal in accordance with the data stored in the selected memory cell. Then, when another memory cell is selected, one of the transistors is turned on, while the other is turned off in accordance with the data read out from the memory. In this case, if the new data is different from the previous data, there is the possibility that the pull-up and pull-down transistors are both turned on concurrently. If both the transistors are currently turned on, a through-current flows through a path between a power source and a ground point. The through-current possibly causes power noise, so that the data read time delays and the memory device malfunctions. These problem is noticeable particularly in the memory device of the type operating at a high speed. 
     SUMMARY OF THE INVENTION 
     Accordingly, an object of the present invention is to provide a static random access memory capable of minimizing the read time delay and the malfunction, which arise from the power noise. 
     To achieve the above object, there is provided a static random access memory comprised of: a memory cell array containing a plurality of static memory cells for storing data arrayed in a matrix fashion; word lines for selecting rows of the memory cells in the memory cell array, the word lines being arranged along with the rows of the memory cell array; bit line pairs arranged the columns of the memory cells in the memory cell array, the bit line pairs each selecting one column of the memory cells to transfer data to and from one of the memory cells of the selected column; an address input circuit receiving an address signal to select one of the memory cells of the memory cell array; a row decoder for decoding a row address signal supplied from the address input circuit to selectively drive the word lines; a column decoder for decoding a column address signal supplied from the address input circuit to select one of the bit line pairs; an address transition detector for detecting a transition of an address signal supplied from the address input circuit, to generate an address transition detect signal; a bit line initializing circuit being under control of an address transition detect signal outputted from the address transition detector, when a transition of the address signal is detected, the bit line initializing circuit initializing a potential of each the bit line pair to a predetermined potential; a clock signal generator being coupled for reception an address transition detect signal from the address transition detector, the clock signal generator generating during a predetermined period of time elapsing from generation of the address transition detect signal in a read mode; a sense amplifier for amplifying the data as is read out from one selected memory cell to the bit line pair associated with the selected memory cell, the sense amplifier being initialized by an address transition detect signal generated by the address transition detector and neutralized during a period of time that the sense amplifier receives a clock signal from the clock signal generator; and a data output circuit being placed in a high impedance state when the sense amplifier is initialized, outputting the amplified signal from the sense amplifier during a period that the clock signal is being generated, retaining the amplified signal during a period that the clock signal generator stops, and outputting a signal corresponding to the data as is read out of the selected memory cell and outputted from the sense amplifier. 
     In the SRAM thus arranged, in a read mode, the output terminal of the data output circuit is placed in a high impedance state during a period from the inputting of an address signal till the outputting of the data read out of a memory cell specified by the address signal. Therefore, when the data currently read out is different from the data previously read out, no through-current flows between a power source and a around potential. 
     Therefore, the SRAM according to the present invention is free from the read time delay and the malfunction, which are the problems of the prior art. 
    
    
     BRIEF DESCRIPTION OF THE DRAWINGS 
     FIG. 1 is a block diagram showing an arrangement of an SRAM according to an embodiment of the present invention; 
     FIG. 2 is a circuit diagram showing the details a part of the SRAM circuit shown in FIG. 1, which contains a bit line initializing circuit, a memory cell, a column select circuit, and a sense amplifier, which are provided in connection with one column of a memory cell array; 
     FIG. 3 is a circuit diagram showing an arrangement of a data output circuit in the FIG. 1 circuit; 
     FIG. 4 is a circuit diagram showing another arrangement of a data output circuit in the FIG. 1 circuit; 
     FIG. 5 is a block diagram showing an arrangement of an SRAM according to another embodiment of the present invention; 
     FIG. 6 is a circuit diagram showing the details a part of the SRAM circuit shown in FIG. 1, which is a circuit arrangement containing a data output circuit and a data output detector; and 
     FIG. 7 is a circuit diagram showing the details a part of the SRAM circuit shown in FIG. 1, which is another circuit arrangement containing a data output circuit and a data output detector. 
    
    
     DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS 
     FIG. 1 is a block diagram showing an arrangement of an SRAM according to a first embodiment of the present invention. An address input terminal 1 to which an address signal Add is applied is connected to the input terminal of an address input circuit 2. The output terminal of the address input circuit 2 is connected to the input terminal of a row decoder 3. The row decoder 3 decodes a row address signal derived from the address input circuit 2. Word lines 4 are connected to the output terminals of the row decoder 3. The word lines 4 are selectively driven by an output signal of the row decoder 3. Paired bit lines 5 and 5 are disposed orthogonal to the word lines 4. Each pair of bit lines 5 and 5 is coupled at first end to a bit line initializing circuit 6, which is provided in association with the bit line pair. Each bit line initializing circuit 6 is for initializing a potential of the paired bit lines 5 and 5 to a predetermined potential. Static memory cells 7 are located at the cross-points of the word lines 4 and the bit line pairs 5 and 5, respectively, forming a matrix array MA of the memory cells. The input terminal of a column decoder 8 is connected to the output terminal of the address input circuit 2. The column decoder 8 decodes a column address signal derived from the address input circuit 2. Each column selector 9 is connected to a second terminal of the bit line pair 5 and 5, which is provided in association with the column selector 9. The column selector 9 is driven by a column select signal supplied through an output line 22 of the column decoder 8. A sense amplifier 10 is connected at the input terminal to the output terminal of the column selector 9, through a pair of sense amplifier input lines 25 and 25. The sense amplifier 10 amplifies the data read out from a memory cell which is selected by the cooperation of the row decoder 3 and the column decoder 8. A data output circuit 11 is connected to the output terminals of the sense amplifier 10, through a pair of sense amplifier output lines 26 and 26. A data output terminal 12 is connected to the output terminal of the sense amplifier 10. The data, which is read out of the memory cell 7 and amplified by the sense amplifier 10, is applied through the data output circuit 11 to the data output terminal 12 and is outputted to exterior. The input terminal of an address transition detector 13 is connected to the address input circuit 2. In a read mode, the address transition detector 13 detects a transition of an address signal inputted to the address input circuit 2, and produces an address transition detect signal SATD. The address transition detect signal SATD is supplied through an output line 21 of the address transistor detector 13 to the bit line initializing circuits 6, through an output line 24 to the sense amplifier 10, and through an output line 27 to a clock signal generator 14. The clock signal generator 14 receives the address transition detect signal SATD from the address transition detector 13, and produces a clock signal φ S that is effective in level for a fixed period. The clock signal φS is applied through a clock signal line 23 to the sense amplifier 10 and the data output circuit 11, so that those circuits are rendered active during the fixed period. 
     FIG. 2 shows the details of an arrangement of a part of the SRAM circuit of FIG. 1, which contains the bit line initializing circuit 6, memory cell 7, row selector 9, and sense amplifier 10 which are provided in connection with one column of the memory cell array MA. As shown, the bit line initializing circuit 6 is made up of a pair of p-channel MOSFETs P1 and P2, and an inverter 31. The source of the MOSFET P1 is connected to a power source V DD , and the drain thereof to the bit line 5. Similarly, the source of the MOSFET P2 is connected to the power source V DD , and the drain thereof to the bit line 5. The gates of the MOSFETs P1 and P2 are connected together, and a connection point of those gates is connected to the output terminal of the inverter 31. The input terminal of the inverter 31 is connected to the output line 21 of the address transition detector 13. With this connection, the address transition detector 13 supplies the address transition detect signal SATD to the inverter 31. 
     In the bit line initializing circuit 6, when the address transition detect signal SATD goes high, the MOSFETs P1 and P2 are both turned on to initialize the bit line pair 5 and 5 and set it at a level of a power source voltage V DD . 
     The memory cell 7 is made up of resistors R1 and R2 as high resistance loads, drive MOSFETs N1 and N2, and transfer MOSFETs N3 and N4. The resistor R1 is connected at one end to the power source V DD  and at the other end to the drain of the drive MOSFET N1. The resistor R2 is connected at one end to the power source V DD  and at the other end to the drain of the drive MOSFET N2. The gate of the drive MOSFET N1 is connected to the drain of the drive MOSFET N2 and the source thereof to a ground point. The gate of the drive MOSFET N2 is connected to the drain of the drive MOSFET N1 and the source thereof to a ground point. A current path between the source and drain of the transfer MOSFET N3 is inserted between the bit line 5 and the drain of the drive MOSFET N1. A current path between the source and drain of the transfer MOSFET N4 is inserted between the bit line 5 and the drain of the drive MOSFET N2. The word line 4 is connected to the gates of the MOSFETs N3 and N4. 
     In the memory cell 7, one of the drive MOSFETs N1 and N2 is in an on state and the other in an off state in accordance with the content of the stored data. When the word line 4 is selected and goes high, the transfer MOSFETs N3 and N4 are both turned on. A potential of the bit line connected to the drive MOSFET being in an on state drops, while a potential of the bit line connected to the drive MOSFET being in an off state is maintained in V DD  level. 
     The column selector 9 is made up of p-channel MOSFETs P3 and P4, and an inverter 32. The drain of the MOSFET P3 is connected to the bit line 5, and the drain of the MOSFET P4 to the bit line 5. The source of the MOSFET P3 is connected to one end of a sense amplifier input line 25, and the source of the MOSFET P4 is connected to one end of a sense amplifier input line 25. The gates of the MOSFETs P3 and P4 are connected together, and a connection point of these gates is connected to the output terminal of the inverter 32. The input terminal of the inverter 32 is connected to an output line 22 of the column decoder 8, and supplied with a column select signal from the decoder 8. 
     When one output line 22 of the column decoder 8 goes high, the column selector 9 connected with that output line 22 is selected. In the selected column selector 9, the MOSFETs P3 and P4 are both turned on. As a result, the bit line pair 5 and 5 and the input line pair 25 and 25 are coupled with each other. 
     The sense amplifier 10 is made up of input MOSFETs of n-channel N5-1, N6-1, N5-2, and N6-2, control MOSFETs of n-channel N7-1, N8-1, N7-2 and N8-2, current restricting MOSFETs of n-channel N9-1 and N9-2, potential equalizing MOSFETs of n-channel N10-1, N10-2, and N11, load MOSFETs of p-channel P5-1, P6-1, P5-2, and P6-2, p-channel MOSFETs for sense amplifier initialization P7-1, P8-1, P7-2 and P8-2, an inverter 33, and an AND gate 34. The other end of the sense amplifier input line 25 is connected to the gates of MOSFETs N6-1 and N5-2. The current paths of the MOSFETs P8-1 and P6-1 are connected in parallel between the drain of the MOSFET N6-1 and the power source V DD . The other end of the sense amplifier input line 25 is connected to the gates of MOSFETs P7-1 and P5-1. The current paths of the MOSFETs P7-1 and P5-1 are connected in parallel between the drain of the MOSFET N5-1 and the power source V DD . The gates of the MOSFETs P8-1 and P7-1 are connected to the output terminal of the AND gate 34. The gates of the MOSFETs P6-1 and P5-1 are connected together, and a connection point of them is further connected to the drain of the MOSFET P6-1. A current path between the source and drain of the MOSFET N10-1 is inserted between the drain of the MOSFET P6-1 and the drain of the MOSFET P5-1. The gate of the MOSFET N10-1 is connected to the output line 24 of the address transition detector 13. The source of the MOSFET N6-1 is connected to the drain of the MOSFET N8-1, and the source of the MOSFET N5-1 is connected to the drain of the MOSFET N7-1. The sources of the MOSFETs N8-1 and N7-1 are connected together and the gates of them are connected to the output terminal of the AND gate 34. One of e input terminals of the AND gate 34 is connected to a clock signal line 23, and the other input terminal thereof is connected to the output terminal of the inverter 33. The input terminal of the inverter 33 is connected to the output line 24. A source-drain current path of the MOSFET N9-1 is connected to a ground point and a node where the sources of the MOSFETs N8-1 and N7-1 are interconnected. The gate of the MOSFET N9-1 is connected to the power source V DD . 
     The current paths of the MOSFETs P7-2 and P5-2 are connected in parallel between the drain of the MOSFET N5-2 and the power source V DD . The current paths of the MOSFETs P8-2 and P6-2 are connected in parallel between the drain of the MOSFET N6-2 and the power source V DD . The gates of the MOSFETs P6-2 and P8-2 are connected to the output terminal of the AND gate 34. The gates of the MOSFETs P5-2 and P6-2 are interconnected and then to the drain of the MOSFET P6-2. The current path between the source and drain of the MOSFET N10-2 is connected between the drain of the MOSFET P5-2 and the drain of the MOSFET P6-2. The gate of the MOSFET N10-2 is connected to the output line 24 of the address transition detector 13. The source of the MOSFET N5-2 is coupled with the drain of the MOSFET N7-2, and The source of the MOSFET N6-2 is coupled with the drain of the MOSFET N8-2. The sources of the MOSFETs N7-2 and N8-2 are interconnected and the gates of them is connected to the output terminal of the AND gate 34. A source-drain current path of the MOSFET N9-2 is connected between a around point and a connection point interconnecting the sources of the MOSFETs N7-2 and N8-2. The gate of the MOSFET N9-2 is connected to the power source V DD . 
     A source-drain current path of the MOSFET N11 is inserted between the drains of the MOSFETs N5-1 and N5-2. The gate of the MOSFET N1l is connected to the output line 24. The drain of the MOSFET N5-1 is connected to one end of the sense amplifier output line 26, and the drain of the MOSFET N5-2 is connected to one end of the sense amplifier output line 26. 
     The sense amplifier thus arranged will operate in the following way. A transition of an address signal Add is detected by the address transition detector 13, so that an address transition detect signal SATD from the detector goes high. The signal SATD renders a clock signal φS produced from the clock signal generator 14 high in level. The MOSFETs N10-1, N10-2, N11, P8-1, P7-1, P7-2 and P8-2 are all turned on, while the MOSFETs N8-1, N7-1, N7-2, and N8-2 are all turned off. Under this condition, the potentials at the output node of the sense amplifier 10 and the sense amplifier output line pair 26 and 26 are initialized and set at a potential level of the power source voltage V DD . The address transition detect signal SATD goes high, and the clock signal φS maintains a high level. Under this condition, the MOSFETs N10-1, N10-2, N1l, P8-1, P7-1, P7-2 and P8-2 are all turned off, while the MOSFETs N8-1, N7-1, N7-2, and N8-2 are all turned on. Then, the sense amplifier 10 becomes active, and amplifies a potential difference between paired input lines 25 and 25 for the sense amplifier. After a predetermined period of time, the clock signal φS goes low, the MOSFETs P8-1, P7-1, P7-2, and P8-2 are all turned on, and the MOSFETs N8-1, N7-1, N7-2, and N8-2 are all turned off. Accordingly, the sense amplifier 10 becomes inactive. 
     Turning now to FIG. 3, there is shown the details of the data output circuit 11 in the FIG. 1 circuit. The data output circuit 11 is made up of 2-input NOR gates 35 to 38, 40, and 41, inverters 39 and 42, a pull-up MOSFET P9 of p-channel, and a pull-down MOSFET N12 of n-channel. The 2-input NOR gates 35 to 38, 40, and 41, and the inverters 39 and 42 make up a master slave flip-flop. The MOSFETs P9 and N12 are turned on and off by the flip-flop. One of the input terminals of the NOR gate 35 is connected to the other end of the sense amplifier output line 26, and one of the input terminals of the NOR gate 36 is connected to the other end of the sense amplifier output line 26. The other input terminal of the NOR gate 35 is connected to the output terminal of the NOR gate 36, and the other input terminal of the NOR gate 36 is connected to the output terminal of the NOR gate 35. The output terminal of the NOR gate 35 is connected to the one of the input terminals of the NOR gate 37, and the output terminal of the NOR gate 36 is connected to one of the input terminals of the NOR gate 38. The other input terminals of the NOR gates 37 and 38 are connected to the output terminal of the inverter 39. The input terminal of the inverter 39 is connected to the output line 23 of the address transition detector 13. One of the input terminals of the NOR gate 40 is connected to the output terminal of the NOR gate 37, and one of the input terminals of the NOR gate 41 is connected to the output terminal of the NOR gate 38. The output terminal of the NOR gate 41 is connected to the other input terminal of the NOR gate 40, and The output terminal of the NOR gate 40 is connected to the other input terminal of the NOR gate 41. The output terminal of the NOR gate 40 is connected to the input terminal of the inverter 42. The output terminal inverter 42 is connected to the gate of the MOSFET P9. The source of the MOSFET P9 is connected to the power source V DD , and the drain of it is connected to the data output terminal 12 and the drain of the MOSFET N12. The output terminal of the NOR gate 41 is connected to the gate of the MOSFET N12 whose source is grounded. 
     In operation, during a period that a clock signal φS outputted from the clock generator 14 is high, MOSFETs P9 and N12 are both turned off. During a low level period of the clock signal φS, one of the MOSFETs is turned on, while the other is turned off in accordance with the potentials of the sense amplifier output lines 26 and 26. To be more specific, as already described, when the address transition detect signal SATD and the clock signal φS become both high in level, the sense amplifier 10 is initialized and the sense amplifier output lines 26 and 26 become high. Accordingly, the output signals of the NOR gates 35 and 36 go low in level. Since the clock signal φS is high, the two input terminals of each NOR gate 37 and 38 are set in a low level. In turn, the output signals of the NOR gates 37 and 38 go high, so that the output signals of the NOR gates 40 and 41 also go high. The MOSFETs P9 and N12 are both turned off, and in turn the data output terminal 12 has a high impedance. When the clock signal φS goes low (at this time the sense amplifier output line pair 26 and 26 is placed such that one of them is set in a high level and the other in a low level in accordance with the data read out of the selected memory cell), one of the MOSFETs is turned on and the other is turned off in accordance with the potentials of the output lines 26 and 26. The result is that a high or low signal, which depends on the read data, is derived from the data output terminal 12. 
     A read operation of the SRAM illustrated in FIGS. 1 through 3 will be described. An address signal Add is supplied to the address input circuit 2 through the address input terminal 1. A row address signal contained in the address signal Add is applied to the row decoder 3, and a column address signal also contained in the same is applied to the column decorder 8. At this time, the address transition detector 13 detects a transition of the address signal Add, and produces an address transition detect signal SATD. This signal SATD is supplied to the bit line initializing circuits 6, to initialize both the paired bit lines 5 and 5 and set them in the level of the power soruce voltage V DD . At the same time, the row decoder 3 decodes a row address to select a specific word line 4. The memory cells 7 coupled with the selected word line 4 are all selected. A potential difference is caused between the paired bit lines 5 and 5 coupled with these memory cells 7. The column decoder 8 decodes a column address, and selects one column selector 9. The potential difference between the paired bit lines 5 and 5 of the selected column selector 9 is transferred to the sense amplifier 10. The address transition detect signal SATD drives the clock signal generator 14 which in turn generates a clock signal during a fixed period of time. The output line pair 26 and 26 of the sense amplifier 10 is initialized and set at the power soruce voltage V DD  level. Thereafter, during a high level period of the clock signal φS, the active state of the sense amplifier 10 continues. Under this condition, the potential difference between the paired bit lines 5 and 5, and the potential difference is supplied to the data output circuit 11. At this time, the output line pair 26 and 26 for the sense amplifier 10 is initialized to the V DD  level, so that the data output terminal 12 exhibits a high impedance. Then, after the sense amplifier 10 operates, it outputs the data. After a predetermined period of time, the clock signal φS is returned to be low, to render the sense amplifier 10 inactive. The data output circuit 11 continues the outputting of data Dout via the data output terminal 12. 
     With such an arrangement of the SRAM, in a read mode, during a period from the inputting of the address signal Add till the outputting of the data read out of the memory cell at that address, the MOSFETs P9 and N12 in the data output circuit 11 are both in an off state. The result is that the output terminal of the data output circuit 11 (data output terminal 12) is kept high in impedance. Therefore, even when the present data is different from the data previously read out, no through current flows between the power source V DD  and a ground point. Consequently, the SRAM can minimize the read time delay and malfunction problem due to the power noise. 
     In FIG. 4, there is shown another configuration of the data output circuit 11, which is available for the SRAM of FIG. 1. The data output circuit 11 is composed of 2-input NAND gates 43 to 46, inverter 47, pull-up MOSFET of p-channel P9, and pull-down MOSFET of n-channel N12. The present circuit configuration, like the FIG. 3 circuit, constitutes a master slave flip-flop. One of the input terminals of the NAN gate 43 is connected to the other end of the sense amplifier output line 26, and one of the input terminals of the NAND gate 44 is connected to the other end of the sense amplifier output line 26. The other input terminals of the NAND gates 43 and 44 are coupled with the output line 23 of the address transition detector 13. One of the input terminals of the NAND gate 44 is connected to the output terminal of the NAND gate 43, and one of the input terminals of the NAND gate 46 is connected to the output terminal of the NAND gate 44. The output terminal of the NAND gate 46 is connected to the other input terminal of the NAND gate 45, and the output terminal of the NAND gate 45 is connected to the other input terminal of the NAND gate 46. The output terminal of the NAND gate 45 is connected to the gate of the MOSFET P9. The source of the MOSFET P9 is connected to the power source V DD , and its drain is connected to the data output terminal 12 and the drain of the MOSFET N12. The output terminal of the NAND gate 46 is connected to the input terminal of the inverter 47, and the output terminal of this inverter is connected to the gate of the MOSFET N12 whose source is grounded. 
     The above configuration of the data output circuit 11 has a similar logic operation to that of the FIG. 3 configuration. 
     FIG. 5 shows a circuit configuration of an SRAM according to a second embodiment of the present invention. The FIG. 5 configuration improves over the FIG. 1 circuit in that a power dissipation is reduced in a read mode, and a read operation is more reliable. 
     For simplicity, like reference symbols are used for designating like or equivalent portions in FIG. 1, and elaboration of them will be omitted. A data output circuit 11 is connected to the input terminal of a data output detector 15. An output line 28 of the data output detector 15 is connected to one of the input terminals of an OR gate 16. The other input terminal of the OR gate 16 is connected to a clock signal line 23 also coupled with the output terminal of a clock signal generator 14. A signal line 29 coupled with the output terminal of the OR gate 16 is connected to a sense amplifier 10 and a data output circuit 11. 
     A circuit configuration of a part of the SRAM of FIG. 5, which contains a bit line initializing circuit 6, memory cell 7, column selector 9, and sense amplifier 10 which are provided in connection with one column line of an memory cell array MA, is the same as the FIG. 2 configuration. 
     FIG. 6 shows the details of the data output circuit 11 and the data output detector 15 in the FIG. 5 circuit. A configuration of the circuit 11 is the same as that of the FIG. 3 circuit. The data output detector 15 consists of a 2-input NOR gate 48. The output terminal of the NOR gate 40 is connected to one of the input terminals of the NOR gate 48, while the output terminal of the NOR gate 41 to the other input terminal. The output terminal of the NOR gate 48 is connected to the output line 28. 
     An operation of the circuit illustrated in FIGS. 5 and 6 will be described. In the FIG. 5 circuit, an operation that after an address signal Add is inputted, the data from a selected memory cell 7 is supplied to the data output circuit 11 and is derived from the output terminal 12, is substantially the same as that of the FIG. 1 circuit. The SRAM of the second embodiment is different from the FIG. 1 circuit of the first embodiment in that a signal φSO as a logical sum of an output signal of the data output detector 15 and a clock signal φS from the clock signal generator 14 is used for controlling the sense amplifier 10 and the data output circuit 11. So long as the data output detector 15 detects the data outputting, if the clock signal φS goes low, the sense amplifier 10 and the data output circuit 11 are continuously active. In the case of the FIG. 1 circuit, a high level period of the clock signal φS is preset, as recalled. Therefore, a drive force by the memory cell 7 for the bit line pair 5 and 5  is weak. In a situation that a long time is taken till the data is outputted through the sense amplifier 10 to the data output circuit 11, the clock signal φS may go low before the read operation ends. In such a case, the read operation is imperfect. On the other hand, the FIG. 5 circuit can successfully cope with such a situation. When the SRAM is placed in such a situation, the output signal of the data output detector 15 continuously activates the sense amplifier 10 and the data output circuit 11. Therefore, the read operation will be normally performed even when the drive force by the memory cell 7 for the bit line pair 5 and 5 is weak. Additionally, an appropriate adjustment of a time length of generating the clock signal φS may reduce a power dissipation when the drive force of the memory cell 7. Specifically, the clock signal φS is pulsed from a high level to a low level immediately after the signal φS goes high to activate the sense amplifier 10 and the data output circuit 11, and the data output detector 15 produces a signal to activate the sense amplifier 10 and the data output circuit 11. If so pulsed, the memory cell 7 forcibly drives the bit line pair 5 and 5. When the data is quickly applied through the sense amplifier to the data output circuit 11, the output signal of the data output detector 15 goes low immediately. Accordingly, the sense amplifier 10 and the data output circuit 11 are quickly rendered inactive, reducing a power dissipation by the sense amplifier 10 and the data output circuit 11. 
     As seen from the foregoing, in the second embodiment, in a read mode, after the reading out data from the memory cell is detected, the read mode is terminated. Accordingly, the read operation is more reliable with a lessened power dissipation. 
     Another circuit configuration containing the data output circuit 11 and the data output detector 15 is shown in FIG. 7. The data output circuit 11 has the same configuration as that of the FIG. 4 circuit. The data output detector 15 is made up of a 2-input AND gate 49. The output terminal of a NAND gate 45 is connected to one of the input terminals of the AND gate 49, and the output terminal of a NAND gate 46 is connected to the other input terminal. The output terminal of the AND gate 49 is connected to the output line 28. 
     The FIG. 7 circuit has substantially the same logical operation and the beneficial effects as the FIG. 6 circuit.