Photomask for forming high resolution photoresist patterns
BACKGROUND OF THE INVENTION 
     1. Field of the Invention 
     The present invention relates to a method for forming photoresist patterns in the fabrication of a semiconductor device, and more particularly to a photomask for forming a high resolution photoresist pattern, capable of attenuating a light exposure energy with its strength concentrated on the center of the mask pattern being formed. 
     2. Description of the Prior Art 
     For clearly defining an outline with a minimum linear width by use of a photoresist film in a photo-masking process, there have been efforts to improve the resolution. These efforts have led to various process developments such as development of photoresist films exhibiting good characteristics and reduction of the wavelength of the light emitted from a light source or other light exposure equipment. However, the developed techniques can not solve a problem that the photoresist pattern exhibits a limited resolution due to an intrinsic wave surging property of the light source. 
     A conventional photomask for forming a photoresist pattern will now be described, in conjunction with FIGS. 1A to 1C. 
     As shown in FIG. 1A, the photomask has a chrome pattern 2 formed on a reticle 1 and is identical to a pattern for forming a contact hole. The photomask has an energy distribution that the energy peak is exhibited at the center of a portion of the photomask where the chrome pattern 2 is not present, as shown in FIG. 1B. In the photomask, energy is distributed symmetrically with respect to the energy peak point and gradually reduced toward opposite lateral edges of the photomask. As a result, a considerably low light exposure energy strength is exhibited at the lateral edges of the chrome pattern 2, thereby considerably degrading the resolution. 
     In other words, formation of a photoresist pattern using the above-mentioned conventional photomask involves a degradation in resolution because the photoresist film is partially left along predetermined boundaries between the chrome and the non-chrome (a&#39;and b&#39;in FIG. 1C). 
     SUMMARY OF THE INVENTION 
     Therefore, an object of the invention is to solve the above-mentioned problems encountered in the prior art and, thus, to provide a photomask capable of forming a photoresist pattern exhibiting a high resolution. 
     In accordance with the present invention, this object can be accomplished by providing a photomask for forming a high resolution photoresist pattern on a reticle, comprising light exposure energy attenuation means formed on a portion of the reticle, on which the strength of the light exposure energy is concentrated, and adapted to attenuate the concentrated light exposure energy. 
    
    
     BRIEF DESCRIPTION OF THE DRAWINGS 
     Other objects and aspects of the invention will become apparent from the following description of embodiments with reference to the accompanying drawings in which: 
     FIG. 1A is a sectional view illustrating the formation of a photoresist pattern using a conventional photomask; 
     FIG. 1B is a diagram illustrating an energy distribution exhibited when a light exposure is carried out using the photomask of FIG. 1A; 
     FIG. 1C is a plan view illustrating a photoresist pattern formed by use of the photomask shown in FIG. 1A; 
     FIG. 2A is a sectional view illustrating the formation of a photoresist pattern using a photomask in accordance with the present invention; 
     FIG. 2B is a diagram illustrating an energy distribution exhibited when a light exposure is carried out using the photomask of FIG. 2A; FIG. 20 is a plan view illustrating a photoresist pattern formed by use of the photomask shown in FIG. 2A; FIG. 3 is a plan view illustrating a photomask in accordance with an embodiment of the present invention for forming a contact hole; and FIG. 4 is a plan view illustrating a photomask in accordance with another embodiment of the present invention. 
    
    
     DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT 
     FIG. 2A is a sectional view illustrating the formation of a photoresist pattern using a photomask in accordance with the present invention. In FIG. 2A, the reference numerals 11 and 12 denote a reticle and a chrome pattern, respectively. As shown in FIG. 2A, the photomask of the present invention includes the chrome pattern 12 formed on the reticle 11. In accordance with the present invention, the photomask further includes a chrome dot 14 formed at the center of the reticle 11 as a means for decreasing light exposure energy concentrated at the center of the photomask. By the chrome dot 14, the photomask has a total uniform light exposure energy distribution as shown in FIG. 2B. For obtaining such a uniform light exposure energy distribution in the photomask formed with the chrome dot 14, it is necessary to use light exposure energy having a strength higher than that of the conventional case by 10%. 
     After a development, a photoresist pattern 13 is obtained. As shown in FIG. 2C, the photoresist pattern 13 has a structure including no portion left beyond predetermined edges &#34;a and b&#34; thereof. 
     FIG. 3 is a plan view illustrating a photomask in accordance with an embodiment of the present invention for forming a contact hole. As shown in FIG. 3, the size (f×g μm 2 ) of the chrome dot 14 formed at the center of the non-chrome region having the size of d×e μm 2  is variable within 10% of the size (e×d μm 2 ) of the total contact hole region, depending on the characteristic of a light exposure equipment used. Where the size of the chrome dot 14 is excessive, the light exposure energy strength is rather decreased, thereby causing a scum to be left. At an insufficient size of the chrome dot 14, the effect intended is obtained insufficiently. When the chromium dot is centrally positioned, a maximum effect can be obtained. 
     FIG. 4 is a plan view illustrating a photomask in accordance with another embodiment of the present invention. This photomask can be employed for patterning lines. 
     In this case, the photomask comprises a chromium pattern including spaced wide chromium lines 22 each having a predetermined linear width. In accordance with the same concept as in the above-mentioned embodiment, the photomask further comprises narrow chromium lines 24 each having a very narrow linear width and formed between adjacent wide chromium lines 22, so as to attenuate the light exposure energy strength. As a light exposure is carried out using an increased energy strength, the narrow chromium lines serve to prevent photoresist pattern material from being left beyond predetermined line regions. As a result, an improvement in resolution is achieved. 
     As is apparent from the above description, the present invention provides a photomask capable of forming a photoresist pattern, capable of compensating a limited resolution exhibited at edges of the pattern due to an intrinsic wave surging property of a light source used, thereby obtaining a high resolution. Accordingly, it is possible to easily obtain a photoresist pattern on a highly integrated semiconductor device. 
     Although the preferred embodiments of the invention have been disclosed for illustrative purposes, those skilled in the art will appreciate that various modifications, additions and substitutions are possible, without departing from the scope and spirit of the invention as disclosed in the accompanying claims.