Integrated circuit that eliminates latch-up and analog signal error due to current injected from the substrate
BACKGROUND OF THE INVENTION 
     1. Field of the Invention 
     This invention relates generally to power integrated circuits having saturating vertical output transistor configurations and, more specifically, to a method of eliminating latch-up and analog signal errors in circuits wherein the chip substrate injects current into an epitaxial layer. 
     2. Background Art 
     Recent advances in semiconductor technology includes integrated circuitry having vertical PNP output power transistors. The typical configuration comprises a P-type chip substrate, which also serves as a collector for the PNP output power transistor. An N-type epitaxial layer overlies the P-substrate and serves as a base for the PNP output power transistor as well as for lateral PNP transistors. A plurality of P-regions may be diffused into the N-type epitaxial layer. These P-regions may be used as an emitter or emitters for the PNP output power transistor, emitters and collectors of lateral PNP transistors, and resistors. This is accomplished in a manner known well by those skilled in the art. 
     However, there are at least three situations where the substrate would inject unwanted current into the epitaxial layer to be collected by the P-regions which may provide positive feedback to the circuit output. This positive feedback attempts to drive the substrate to a higher voltage relative to the epitaxial layer, thus injecting more current from the substrate into the epitaxial layer, creating a latch condition. Additionally, in analog circuitry, the unwanted substrate injected currents can cause circuit imbalances and major errors in analog signal paths even if a latch condition does not occur. 
     One example exists when the P-type substrate (circuit output) is high (at or near V CC ) and the epitaxial layer is down one V BE  voltage because it contains a lateral PNP transistor in a conductive condition. A second example exists when the substrate is at a high voltage level and one region of the epitaxial layer is pulled down one V BE  due to lateral NPN action from adjacent epitaxial layer regions. In other words, an NPN transistor is formed by two adjacent N-type epitaxial layer regions and the P-substrate. A third example exists when the substrate voltage is above V CC  due to transients on the circuit output. Under any of these examples, the substrate injects current into the epitaxial layer and any P-region diffused in the epitaxial layer may become a collector of that current. 
     Thus, a need exists for a method of eliminating circuit latch-up and analog signal errors in integrated circuits that comprise a substrate as the collector of a PNP power output transistor. 
     SUMMARY OF THE INVENTION 
     Accordingly, it is an object of the present invention to provide an improved power integrated circuit chip configuration. 
     Another object of the present invention is to provide a method for eliminating latch-up of output of BIMOS circuits. 
     Yet another object of the present invention is to provide a method for eliminating analog signal errors in circuitry of power integrated circuit chips. 
     Still another object of the present invention is to provide a method of eliminating latch-up or analog circuit errors caused by injection of substrate current in an operating circuit. 
     Yet a further object of the present invention is to provide a method of generating analog signals created by injection of current from the substrate to circuitry of power integrted circuit chips. 
     In carrying out the above and other objects of the present invention in one form, there is provided a circuit monolithically integrated in a vertical structure having a P-type substrate serving as a collector of a vertical PNP transistor and a first N-type epitaxial region overlying the substrate and serving as a base of the vertical PNP transistor. A first P-type region is diffused in a second N-type epitaxial region and collects a first current injected into the second epitaxial region from the substrate when the substrate rises to V CC . This first current is applied to the circuit as feedback to compensate for a second current collected from the substrate by a second P-type region diffused in a third N-type epitaxial region. The first P-type region, for example, may be an enlarged collector area of a lateral transistor, contiguous to a P-type resistor without substantially increasing the resistance value, or an isolated P-type region. 
     The above and other objects, features, and advantages of the present invention will be better understood from the following detailed description taken in conjunction with the accompanying drawings. 
    
    
     BRIEF DESCRIPTION OF THE DRAWINGS 
     FIG. 1 illustrates in schematic form a circuit including the present invention. 
     FIG. 2 illustrates a top plan view of an integrated circuit die layout of one transistor of the present invention. 
     FIG. 3 illustrates a top plan view of an integrated circuit die showing another transistor of the present invention. 
     FIG. 4 illustrates in cross-section a vertical PNP transistor in addition to the cross-section of the transistors illustrated in FIGS. 2 and 3. 
    
    
     DETAILED DECRIPTION OF THE INVENTION 
     Referring to FIG. 1, a thermal shut-down circuit is shown that illustrates the analog circuit error problem that exists in power BIMOS circuits which utilizes BIMOS control circuits and a vertical output PNP power transistor, and the solution given by the present invention. This circuit is disclosed in application Ser. No. 582,358 filed concurrently with this application. The thermal shut-down circuit is suitable to be fabricated in monolithic integrated circuit form. Vertical PNP transistor 5 has a base connected to control circuit 6, a collector connected to output terminal 7, and an emitter connected to supply voltage terminal 12. PNP transistor 5 is resident on the same integrated circuit as the remaining circuit of FIG. 1 and has its collector formed by a substrate of the integrated circuit. PNP transistor 11 has an emitter coupled to supply voltage terminal 12 by resistor 13. PNP transistor 14 has an emitter coupled to supply voltage terminal 12 by resistor 15. Transistor 11 is scaled in a manner known to those skilled in the art so that it will have a lower emitter current density than transistor 14. For example, the emitter area of transistor 11 may be four times the emitter area of transistor 14. PNP transistor 16 has an emitter connected to supply voltage terminal 12 and both its base and collector coupled to supply voltage terminal 17 by current source 18. The bases of transistors 11, 14, 16 are interconnected. Transistor 16 establishes a current that is mirrored by transistors 11, 14. 
     NMOS transistor 19 has a source connected to supply voltage terminal 17 and a drain connected to the collector of transistor 14. NMOS transistor 21 has a source connected to supply voltage terminal 17 and a drain connected to the collector of transistor 11. The gates of transistors 19, 21 are both connected to the collector of transistor 14. Transistors 19, 21 function as a current mirror, thereby insuring that transistors 11, 14 carry identical currents when the circuit is in an equilibrium condition. 
     Output PNP transistor 22 has an emitter coupled to supply voltage terminal 12 by resistor 23, a collector connected to thermal shut-down signal terminal 24, and a base coupled to the emitter of transistor 11 by resistor 25. DMOS transistor 26 has a drain connected to the base of transistor 22, a gate connected to the collector of transistor 11, and a source connected to controlled current reference terminal 28 and both the gate and drain of NMOS transistor 27. The source of transistor 27 is connected to supply voltage terminal 17. Transistor 27 functions as a diode and provides a bias level for the controlled current reference signal on terminal 28. 
     NMOS transistor 29 has a drain connected to terminal 24, a source connected to supply voltage terminal 17, and a gate connected to the gates of transistors 19, 21. 
     Since resistors 13 and 15 are substantially equal in value and transistor 11 is scaled to some multiple value, n, greater than transistor 14 and if the mirror consisting of NMOS transistors 19 and 21 requires the collector current of transistor 14 and 11 to be equal, then the emitter of transistor 11 must be at a lower potential than that of transistor 14. This lower potential is achieved by conducting an additional current, I, through resistor 13. This current, I, is equal to ##EQU1## where K is Boltzman&#39;s constant, T is absolute temperature, q is the charge of an electron, and R 13  is the ohmic value of resistor 13. This additional current is forced by negative feedback, from the collector of transistor 11, to flow through resistor 25 and transistors 26 and 27. The voltage at the drain of transistor 26 may be used for thermal sensing and shutdown purposes. 
     Referring to FIGS. 2 and 3, the integrated circuit die layout of transistors 11, 14 respectively, are illustrated. Transistor 11 has a base region 31 comprising an N-type epitaxial layer overlying a P-type substrate (not shown). A P-type collector region 32 and a plurality of P-type emitter regions 33 are diffused into the epitaxial layer 31. This multi-emitter structure is well known to those skilled in the art. 
     Referring to FIG. 3, transistor 14 has a base region 34 comprising an N-type epitaxial layer. A P-type collector region 35 and a single P-type emitter region 36 is diffused into the epitaxial layer 34. Transistor 14 may have any number of emitter regions 36, even though only one is shown. Transistor 11 is understood to have multiple emitter regions to that of transistor 14. 
     Referring to FIG. 4, the vertical PNP transistor comprises substrate 37 (collector), N-type epitaxial region 38 (base) overlying substrate 37, and P-type region 39 (emitter). N-type epitaxial region 31 overlies substrate 37 and is electrically isolated from N-type epitaxial region 38 by diffused isolation 41 which extends into substrate 37. N-type epitaxial region 34 overlies substrate 37 and is electrically isolated from N-type epitaxial regions 38 by diffused isolation 42 which extends into substrate 37. Alternate isolation techniques, e.g., a groove etched through the thickness of N-type epitaxial regions 31, 34, 38 may be used. Collector regions 32 and 35 and emitter regions 33, 36 are diffused into N-type epitaxial region 31. 
     Collector regions 32 and 35 are shown to have a box matrix configuration. However, any type of configuration would be sufficient as long as the collectors are substantially identical in area. These collector regions 32 and 35 would then equally collect current injected into epitaxial layers 31, 34 by the P-type substrate when the voltage on the substrate rises one V BE  above epitaxial regions 31, 34. The following analysis illustrates that any current injected into the epitaxial layer from the P-substrate will have no effect on the thermal shut-down circuit illustrated in FIG. 1. 
     With the circuit of FIG. 1 in equilibrium, the lateral collector currents of transistors 11, 14 through transistors 21, 19, respectively, are forced to be substantially equal. The substrate currents collected by collector regions 32, 35 of transistors 11, 14 respectively, will also be equal due to their identical area, even though of unknown value. The current mirror action of transistors 19, 21 will then cancel the effects of the equally collected substrate currents so that no error is introduced into the ΔV BE  voltage. 
     In a like manner, it could be seen that any P region such as resistors 13 and 15 may collect current from the substrate and cause analog circuit errors. As shown in the previous argument, if resistors 13 and 15 collect substantially equal currents, no analog error occurs. 
     Additionally, it may be desired to produce analog errors or signals of given polarity. For example, it may be desirable that resistors 13 and 15 not collect identical current so as to produce a signal of given polarity at the output when the substrate is at or near the supply voltage. This signal may be developed by making the collection regions, e.g., resistors 13, 15, of different sizes without changing their ohmic value. Therefore, an analog signal may be produced by providing a P region in an epitaxial region which is one V BE  below supply. This P region then collects current from the substrate when the substrate is at or near the supply voltage. The phase to the output of this analog signal is then dependent on its location in the circuit topology. In other words, the collecting region contains an analog signal which may be used to control the output. 
     By now it should be appreciated that there has been provided a method of eliminating analog circuit errors and circuit latch-up in a power integrated circuit comprising a substrate as the collector of a vertical output power PNP. An example of the circuit includes a first lateral PNP transistor having a plurality of emitter regions diffused in a first portion of the epitaxial layer, and a collector region diffused in the first portion. A second lateral transistor has a single emitter region diffused in a second portion of the epitaxial layer, and a collector region substantially equal in area to the collector region of the first lateral transistor diffused in the second portion of the epitaxial layer. Therefore, the collectors of the first and second transistor collect substantially equal currents injected from the P-type substrate and thereby, circuit balance is maintained.