Dielectric resonator oscillator power combiner
BACKGROUND OF THE INVENTION 
     This invention relates, in general, to high power solid state sources, and more specifically, to high power dielectric oscillators. 
     Conventional sources using dielectric stabilized oscillators (for frequency stability) invariably require power combiner/amplifier stages to achieve the necessary power needed for each application. For example, a typical dielectric resonator oscillator would output approximately 20 or 30 milliwatts and require two or three stages of amplification to achieve a power output of 20 to 30 watts. In addition, an RF driver stage and a power combiner must be added to the amplifiers to complete the circuit. One such dielectric oscillator which outputs relatively large power is disclosed in U.S. application Ser. No. 430,035 by the same inventor as the present application and assigned to the same assignee. 
     This type of oscillator having stages of amplifiers and power combiners requires circulators or isolators between stages to prevent deleterious interactions between stages. For instance, isolators would separate the oscillator from the amplifiers, and similarly, separate the amplifiers from each other. 
     As the different elements are combined, the entire circuit becomes relatively large. Accordingly, the size and volume increase. If the power must be increased, additional stages must be cascaded onto the entire circuit. This cascading effect decreases the total DC to RF conversion efficiency as each additional stage is cascaded on. Applications for dielectric oscillators, particularly in the microwave frequencies, continually require smaller physical volumes with larger power outputs. 
     SUMMARY OF THE INVENTION 
     Accordingly, it is an object of the present invention to provide a high power, high Q dielectric oscillator and power combiner which is realized in a single, compact stage. 
     A microwave oscillator/power combiner incorporates two microstrip transmission lines, each coupled electromagnetically to an output transmission line. Each of the microstrip transmission lines incorporate active diodes such as IMPATT or GUNN diodes which generate RF energy when acted upon by a DC voltage. The output transmission line is coupled to ground to allow the output end of the transmission line to be adjacent to the active diodes. The two microstrip transmission lines are coupled to a high Q tank circuit through a Wilkinson power divider. The high Q tank circuit is preferably a dielectric resonator. The oscillator may be cascaded to increase power output. 
     The above and other objects, features, and advantages of the present invention will be better understood from the following detailed description taken in conjunction with the accompanying drawings. 
    
    
     BRIEF DESCRIPTION OF THE DRAWING 
     FIG. 1 is a diagram of an improved high power microwave oscillator according to the present invention. 
     FIG. 2 is a diagram of the equivalent circuit of FIG. 1. 
     FIG. 3 is a diagram of a high power microwave oscillator/combiner according to the present invention. 
     FIG. 4 is a diagram of the equivalent of circuit of FIG. 3. 
     FIG. 5 is a diagram of the high power oscillator of FIG. 1 having a high Q tank circuit to increase the Q of the circuit of FIG. 1. 
     FIG. 6 is a diagram of the oscillator of FIg. 5 with a dielectric resonator replacing the generic high Q tank circuit. 
     FIg. 7 is a diagram of a high Q high power microwave oscillator/combiner according to the present invention. 
     FIG. 8 is a diagram of the circuit of FIg. 7 cascaded to increase power output. 
    
    
     DETAILED DESCRIPTION OF THE INVENTION 
     The teachings of U.S. Pat. No. 4,982,168 are hereby incorporated by reference. 
     FIG. 1 shows the topology of two parallel microstrip lines, 10 and 12, coupled together in a microwave system. Each microstrip line has a complex load represented by Z 1  and Z 2  respectively. Microstrip line 12 is coupled to ground on a side opposite that of complex load Z 2 . The importance of this coupling to ground will be explained later. 
     Microstrip line 10 has a terminal plane T 1  which represents an open circuit at point T 1 . A load at this point approaches infinite impedence. 
     Microstrip lines 10 and 12 have electrical equivalent lengths of θ 1  where: ##EQU1## X=length of the microstrip line λ=wave length, and 
     β=a constant. 
     FIG. 2 shows the circuit of FIG. 1 in a quasi-lumped equivalent circuit. As shown in FIG. 2, if Z 1  is an active device, such as a GUNN diode or IMPATT diode, and Z 2  is an RF load to which microstrip line 12 is coupled, an oscillator is realized. The oscillator of FIG. 2 is a low Q oscillator subject to drift. 
     One skilled in the art will recognize that GUNN and IMPATT diodes are negative resistance devices and generate energy when subjected to a DC voltage. 
     Without the ground coupled to microstrip line 12, load Z 2  would need to be coupled to the opposite end of microstrip line 12. Specifically, without the ground, Z 2  cannot be adjacent to active load Z 1 , but must rather be opposite thereto. The coupling of microstrip line 12 to ground, and therefore placing load Z 2  adjacent to active load Z 1 , allows the oscillator formed by microstrip lines 10 and 12 to be coupled with other microstrip lines in power combiner form to generate the high power oscillator/power combiner of the present invention. 
     FIG. 3 shows the oscillator formed by microstrip lines 10 and 12 coupled to a third microstrip line 14. Microstrip line 14 is coupled to a load Z 3  which, when represented as an active load, interacts with microstrip line 12 to realize a second oscillator. Since microstrip lines 10 and 12 form an oscillator, and microstrip lines 12 and 14 form an oscillator, both of which output power through microstrip line 12, microstrip line 12 further acts as a power combiner. The power of both oscillators are output through RF load Z 2 . 
     One will recognize that, as with microstrip line 10, microstrip line 14 requires terminal plane T 2  where any load impedance approaches infinity. Furthermore, microstrip line 14 has electrical length θ 2 . 
     FIG. 4 shows the equivalent semi-lumped element circuit of FIG. 3. The oscillator function and power combination become more apparent in FIG. 4. 
     Referring now to FIG. 5, the microstrip oscillator of FIG. 1 is shown having a high Q tank circuit 16. When high Q tank circuit 16 is coupled to the terminal plane T 1 , the oscillator formed by microstrip lines 10 and 12 oscillates with a Q and stability strongly influenced by the parameters of high Q tank circuit 16. For instance, if high Q tank circuit is temperature stable, the oscillator will also be temperature stable. 
     FIG. 6 shows the oscillator of FIG. 5 where high Q tank circuit 16 has been substituted with a dielectric resonator 18. Dielectric resonator 18 is placed one-half wave length from terminal plane T 1 . The high impedance resonance of dielectric resonator 18 will repeat along a transmission line every one-half wave length. Therefore, dielectric resonator 18 must be placed at intervals of one-half wave length from terminal plane T 1 . 
     Microstrip line 10, as shown in FIG. 6, continues one-quarter wave length past dielectric resonator 18. One skilled in the art of microwave transmission theory will recognize that the magnetic coupling potential is strongest where the electric potential is the weakest. This point occurs one-quarter wave length from an open. Since the end of microstrip line 10 is an open, dielectric resonator 18 is coupled to the strongest at the point of high magnetic coupling potential. Therefore, dielectric resonator 18 is positioned adjacent to, and one-quarter wave length from the end of, microstrip line 10. 
     It should be noted that the oscillator of FIG. 6 is similar to the high power oscillator disclosed in U.S. Pat, No. 4,982,168 referenced previously. However, unlike the invention of U.S. Pat. No. 4,982,168 microstrip line 12 is coupled to ground. This allows the RF coupling of Z 2  to be adjacent to the active load Z 1 . The importance of this coupling is seen in FIG. 7. 
     FIG. 7 shows a high Q oscillator/power combiner 20 (hereafter circuit 20) in its preferred embodiment. Circuit 20 combines the high Q oscillator of FIG. 6 with the oscillator/power combiner of FIG. 3 by using a Wilkinson power divider 22. The importance of the ground coupling of microstrip line 12, and therefore the reverse location of the RF load Z 2 , is evidenced by the location of Wilkinson power divider 22. The reversing of the location of RF load Z 2  allows Wilkinson divider 22 to couple microstrip lines 10 and 14 together to dielectric resonator 18. 
     FIG. 7 shows that the distance from terminal planes T 1  and T 2  to the opposite end of Wilkinson divider 22 is one-quarter wave length. Similarly, the distance from Wilkinson divider 22 to dielectric resonator 18 is one-quarter wave length. Together, the distances give the necessary one-half wave length from dielectric resonator 18 to the terminal planes. 
     The operation of stabilizer resistor 24 is discussed in U.S. Pat. No. 4,982,168 referenced above. 
     Circuit 20 of FIg. 7 has been shown through testing to output approximately 15 watts at 16 Gigahertz and 40 watts at 9.5 Gigahertz. 
     FIG. 8 shows an additional embodiment when greater power is required, or when the oscillator must operate at higher frequencies. The high power oscillator 30 of FIG. 8 incorporates two oscillator/combiners 32 and 34 coupled to dielectric resonator 36 through Wilkinson power divider 38. The outputs of oscillator/combiners 32 and 34 are combined by Wilkinson power combiner 40 and output. 
     Each of oscillator/combiners 32 and 34 have two microstrip lines coupled to a Wilkinson power divider, and have active elements, such as GUNN and IMPATT diodes coupled opposite to the Wilkinson power divider. A third microstrip is electromagnetically coupled to the first two microstrip lines and coupled to Wilkinson power combiner 40. Oscillator/combiners 32 and 34 are similar to circuit 20 of FIG. 7. 
     DC bias terminal 42 supplies the DC voltage necessary to activate the active diodes in oscillator/combiners 32 and 34. 
     By coupling oscillator/combiners 32 and 34 together, the power output by circuit 20 of FIG. 7 can be doubled. The dielectric resonator can be used for both oscillator/combiners 32 and 34. Furthermore, additional oscillator/combiners can be cascaded to increase the power output of the entire circuit. There will be some decrease in Q as additional oscillator/combiners are cascaded on. However, the decrease in Q will be insignificant in almost all applications of the circuit. 
     By coupling a dielectric resonator to two oscillators having a common output microstrip line using a Wilkinson power divider, the size and volume of the entire oscillator/amplifier circuitry can be substantially decreased. Additional power requirements can be easily facilitated in a very small area without adding the number of proportionally large devices such as amplifiers. 
     Thus there has been provided, in accordance with the present invention, a high power microstrip oscillator/power combiner that fully satisfies the objects, aims, and advantages set forth above. While the invention has been described in conjunction with specific embodiments thereof, it is evident that many alternatives, modifications, and variations will be apparent to those skilled in the art in light of the foregoing description. Accordingly, it is intended to embrance all such alternatives, modifications, and variations as fall within the spirit and broad scope of the appended claims.