Semiconductor production control and/or measuring unit
FIELD OF THE INVENTION 
     The present invention refers to a control and/or measuring unit for use in the field of semiconductor technology for carrying out a two-dimensional detection and/or control of concentration and/or pressure distributions of process particles within a process chamber of a semiconductor production device. 
     BACKGROUND OF THE INVENTION 
     In the case of most processes taking place in the field of semiconductor production technology, the knowledge of the locus-dependent pressure and concentration characteristics of the gases, vapors and plasmas or of the process particles in general is of decisive importance as far as process monitoring and process control are concerned. A point of special interest in case of these processes is the homogeneity of the particle concentration in the process atmosphere above the semiconductor structure to be produced. 
     It is known that the pressure values occurring within the process chamber during a semiconductor-structure coating process can be monitored by means of pressure gauges, the following pressure gauges being used depending on the pressure to be monitored or measured: heat-conduction vacuum gauges for the fine vacuum region; cold-cathode vacuum gauges for high vacuum up to and into ultrahigh vacuum region; hot-cathode ionization vacuum gauges for the fine vacuum region up to the extreme ultrahigh vacuum region as well as quadruple mass spectrometers. Such pressure gauges cannot be used for a two-dimensional detection of concentration and/or pressure distributions of process particles. Nor is it possible to detect by means of such pressure gauges the concentration of the particles participating in the coating process itself, since the particles to be measured are withdrawn from the process by the known pressure gauges described above, and which suck in the particles. 
     From the field of flame diagnosis, a fluorescence measuring method is known, in the case of which a high-power dye laser light source is used for exciting the flame gases to emit fluorescent radiation. On the basis of the fluorescent radiation emitted, it is then possible to carry out a two-dimensional pressure detection within the flame. The sensitivity of this fluorescent measuring method known from the field of flame diagnosis is several orders of magnitude lower than the sensitivity required for control and measuring methods in the field of semiconductor production. Furthermore, the high-powered dye laser light sources which are required for flame diagnosis and which are sold at a price of approximately $200,000 per unit are too uneconomic for most cases of use outside purely basic research. 
     European Patent EP-A2-0070523 discloses a control and measuring European unit for use in the field of semiconductor production for detecting the concentration or the pressure of process particles at a location examined within the process chamber, within which a vacuum can be created, comprising a light beam source used for producing a light beam within the process chamber, the light beam penetrating an area of the process chamber which is to be examined and the wavelength of the light emitted by the light beam source being so short that the process particles have imparted thereto an excitation energy which suffices for fluorescent radiation, a pick-up device in the form of a detector, which is arranged such that its detection area is disposed at right angles to the light beam and the spectral sensitivity of which is chosen such that, in the spectral region of the fluorescent radiation of the process particles, said spectral sensitivity has a quantum efficiency which suffices for detecting the fluorescent radiation, and an integrator, which is connected to the detector and which is used for determining concentrations or pressures of the process particles at the location examined. However, the European reference does not disclose any information with regard to the concept of fanning the light so as to produce a substantially parallel light fan within the process chamber, nor does it disclose any information with regard to the use of a camera for planar detection of the fluorescent radiation within the process chamber for producing thus a two-dimensional image of the concentration distribution or of the pressure distribution of process particles within the process chamber. 
     In the case of the subject matter of European application EP-A2-0070523, it is, additionally, necessary to use high-powered, expensive Excimer laser units instead of comparatively low-powered laser light source which is used in the present invention. EP-A2-0070523 especially fails to refer in any way to the importance of the low pressure within the process chamber with regard to the use of low powered laser light sources or other light sources. For the purpose of full disclosure of the technological background of the present invention, reference is made to the following publications: DE-Al-3901017, GB-A-2104650; GB-A-2189881 and US-A-4394237. 
     The present invention solves the problem of creating a semiconductor production control and/or measuring unit for a two-dimensional detection and/or control of concentration and/or pressure distributions of process particles within a semiconductor production device. 
     The present invention is a semiconductor production control and/or measuring unit for a two-dimensional detection and/or control of concentration and/or pressure distributions of process particles within a process chamber, which forms part of a semiconductor production device and in the interior of which a vacuum can be generated with the aid of a vacuum pump means, the control and/or measuring unit comprising the following features: 
     a light fan source used for producing a substantially parallel light fan within the process chamber, the light fan penetrating the area of the process chamber which is to be examined with regard to concentration distribution and/or pressure distribution and the wavelength of the light fan source being so short that the process particles have imparted thereto an excitation energy which suffices for fluorescent radiation; 
     a camera which is arranged such that its camera direction is disposed at an angle with respect of the light fan and that it covers the area to be examined, the spectral sensitivity of the camera being selected such that, in the spectral region of the fluorescent radiation of the process particles, the camera has a quantum efficiency which suffices for detecting fluorescent radiation; and 
     a processing device, which is connected to the camera and which determines the two-dimensional concentration and/or pressure distribution of the process particles on the basis of the image signals received from the camera. 
     The present invention is based on the finding that, in spite of the high sensitivity required for the purpose of semiconductor production technology, it is possible to use the fluorescence measuring method, which, in the field of flame diagnosis, can only be realized with low sensitivity, since the problems of quenching and of Mie scattering by dust particles, which reduce the sensitivity of the fluorescence measuring method in the case of flame diagnosis, do not arise under the process conditions of semiconductor production technology. In view of the fact that the interfering effects of quenching and of Mie scattering do not occur, or occur only to an negligible extent, under the skeleton conditions of semiconductor technology, the light source used can be a light source of low power, e.g. a photoflash bulb. The price of such a light source is several orders of ten lower than the price of the dye laser light sources used in the field of flame diagnosis. It follows that the unit according to the present invention can also be realized at a reasonable price. 
    
    
     BRIEF DESCRIPTION OF THE DRAWINGS 
     Other objects and advantages will be apparent from the following description when taken in conjunction with the accompanying drawing, in which: 
     The single figure shows an embodiment of the semiconductor production control and/or measuring unit according to the present invention. 
    
    
     DESCRIPTION OF THE PREFERRED EMBODIMENT 
     In the figure, reference numeral 1 refers to the semiconductor production device in its entirety, the semiconductor production device having a semiconductor wafer 3 arranged within its process chamber 2. 
     The semiconductor wafer 3 is exposed to a directed or non-directed incidence of process particles 4. Within the process chamber 2, there is a vacuum of typically 10 -2  to 10 -7  mbar, which is generated by a vacuum pump means. For extreme cases of use, ultra high vacuum ranges of up to 10 -11  mbar are achievable as well. 
     Outside of the process chamber 2, a light fan source 5 is arranged. The light fan source 5 includes a photoflash bulb 6, which is followed in the light path by a fanning optics 7 provided with an integrated slit diaphragm for producing a narrow light fan or light section defined by parallel light rays. The wavelength of the light emitted by the photoflash bulb 6 is chosen such that it is so short that the process particles have imparted thereto an excitation energy which suffices for fluorescent radiation. The excitation energies are typically within the ultraviolet region. 
     A beam splitter 8, which is arranged subsequent to the fanning optics 7 in the light path, directs part of the light fan onto a line-shaped CCD sensor 9, which is connected to an image processing device 10 at its output side. The light fan enters the process chamber through a first window 11, and in the process chamber it penetrates the area, which is to be examined with regard to concentration distribution and/or pressure distribution, above the semiconductor wafer 3. The first window 11 is a high-vacuum resistant quartz glass window, which has a high transmittance for ultraviolet light and which is resistant to the chemical conditions within the process chamber 2. 
     Outside of the process chamber, a camera 12 is arranged, which serves to detect the fluorescent radiation within the process chamber 2, the fluorescent radiation being emitted by the process particles excited by the light fan. The camera 12 is a highly responsive, two-dimensional camera. In the preferred embodiment, this camera is an MCP (micro channel plate)--amplified CCD camera having a sufficiently high quantum efficiency in the spectral region of the fluorescent radiation. The camera 12 is arranged at an angle α with respect to the light fan. In order to avoid a numeric correction of otherwise occurring projection distortions, the angle α between the camera direction of the camera 12 and the light fan will normally and preferably be a right angle. 
     The camera 12 includes a suitable optical system by means of which the fluorescent radiation of the process particles can be imaged in the taking plane of the camera 12. The camera and the process chamber 2 have arranged between them a second window 13, which, too, permits high-vacuum sealing, which has a high transmittance with respect to the fluorescent wavelength and which is resistant to the chemical condition within the process chamber 2. 
     Window 13 advantageously can also consist of quartz glass. The quartz glass used for the windows 11, 13, 14 is preferably an UVGSFS glass (ultraviolet grade synthetic fused silica) optimized with regard to the ultraviolet region. 
     Alternatively, the lens of an optical system can be substituted for the second window 13. 
     Finally, the process chamber 2 can be closed by a third window 14 through which the light fan leaves the process chamber 2. As far as its properties and its structure are concerned, the third window 14 can be replaced by a light trap. 
     The camera 12 is connected to the image processing device 10 on its output side. The image processing device 10 determines the two-dimensional concentration and/or pressure distribution of the process particles on the basis of the image signals received from the camera, the image processing device taking into account the signals for the vertical intensity distribution of the light fan, which are produced by the line-shaped CCD sensor 9. 
     In view of the fact that the fluorescent radiation detected by the camera has a characteristic wavelength which depends on the respective type of particles, a two-dimensional detection of partial pressure distributions in gas mixtures, molecular mixtures and iron mixtures can be affected. 
     The unit of the present invention and the method of the present invention are based on the fluorescent scattering of light by particles of atomic size (atoms, ions, molecules). For a not excessively great incidence power I, the intensity I F  radiated by the excited particles is proportional to the incident light power an to the particle number density n(x,y), which is, in turn, proportional to the pressure (ideal gas equation). ##EQU1## B 12 , B 21  and A 21  in this case are the Einstein coefficients and Q 21  describes the number of radiationless transitions per unit time (&#34;quenching&#34; rate), which are caused by molecular bombardment. In the case of conventional fields of use (e.g. flame diagnosis), the &#34;quenching&#34; rate is in most cases several orders of ten greater than A 21 , i.e. the fluorescence intensity becomes very small in accordance with equation (1). In view of the fact that the number of molecular bombardments per unit time is directly proportional to the particle number density, radiationless transitions are no longer of any importance in the case of low-pressure applications, whereby the detection sensitivity is markedly increased. An additional important quantity in the field of fluorescence spectroscopy is the saturation intensity I SAT . When I becomes much greater than I SAT , the fluorescence intensity is given by ##EQU2## i.e., the radiation power measured is independent of the incident intensity and directly proportional to the particle number density n(x,y). The smaller I SAT  is, the less difficulties will have to be overcome in order to achieve this situation which is aimed at from the point of view of measuring practice. The saturation intensity is, however, proportional to the expression (A 21  +Q 21 ), i.e., in this case, too, the use of the vacuum technique will have the effect that the saturation intensity is reduced by several orders of ten so that the validity range of equation (2) can readily be achieved with minor technical expenditure.