the present invention provides a method and a device for imaging sources of x - ray and gamma - ray radiation . the device , designated generally as numeral 10 in fig1 incorporates a plurality of lens / detector assemblies 17 to first focus and then detect radiation emanating from a radioactive source 15 , such as a tumor in a patient 12 that has incorporated some radioactivity as it grows . each lens / detector assembly 17 comprises a plurality of high efficiency and high resolution crystal diffraction lenses 18 that focus onto detectors 19 only the radiation of a desired energy and origin . as disclosed infra , and with reference to fig6 each lens 18 comprises a plurality of concentric rings 45 , which in turn are comprised of very accurately mounted diffracting crystals . these crystals are oriented so that only radiation having a predetermined energy is focused onto the detector 19 . the detectors 19 of the device are shielded from unwanted radiation . the device 10 is designed to accommodate the detection of radiation from a myriad of sources . for clarity , the radiation source 15 in the exemplary embodiment shown in fig1 is a tumor that has absorbed a radio - isotope in vivo , whereby the tumor emits radiation of a predetermined wave length λ . however , other radiation sources are also appropriate , including radioisotope - impregnated fissures in a mineral or in a manufactured object , an x - ray or gamma - ray beam scattering from a target , x - rays or gamma rays produced by particle - beam bombardment of a target , and high metabolic rate regions in a living organism wherein a radioisotope has been incorporated . after emanating from the source 15 , the radiation is subjected to a means for focussing the radiation , such as the lens , 18 . the lens 18 directs the radiation to a detection device 19 . the output of the detector is analyzed by a computer . the exemplary device 10 is a plane circular array of lens / detector assemblies 17 with the source 15 situated at the center 13 of the array , the detectors 19 positioned along the periphery of the array , and the focussing means 18 positioned approximately medially between the source 15 and the detectors 19 . as noted supra , the detectors 19 comprise the periphery of the plane circular array and therefore are distally placed relative to the center 13 of the circular array and the focussing means 18 . a three - dimensional scan of the source 15 can be accomplished with two lens / detector assemblies 17 . fig2 is an exemplary embodiment of a three - dimensional imaging system comprising two intersecting and concentric orthogonal arrays 10 of the lens / detector assemblies . the radiation source 15 , resting on a movable platform 16 , is located at the intersection of the two arrays at their common center 13 at the time of imaging . prior to high resolution imaging operations , conventional scintillation counters 20 are provided for quick scan capabilities of the radiating area to approximately locate the source &# 39 ; s position . for the sake of additional clarity , fig1 is an elevational view of fig2 taken along lines 1 -- 1 . if the present invention is used as a medical imaging system , then the source 15 is a patient in whom a radioisotope has been injected . a reference source 14 of the same isotope is positioned at a suitable point on the patient &# 39 ; s body and the location of the patient &# 39 ; s tumor is measured with respect to the reference source 14 . imaging of an extended source is best accomplished by moving the movable platform 16 across the center 13 of the intersecting arrays 10 . alternatively , one could move the lens system relative to the source if means have been provided therefor . the positions of the lenses , detectors , and a platform 16 containing the source 15 and the reference source 14 are monitored by conventional electronic sensors ( not shown ) and recorded and analyzed by a computer ( not shown ). each lens / detector assembly 17 incorporates a plurality of movable focussing means ( such as lenses 18 ) and detectors 19 . the positions of the lenses , detectors and a platform 16 containing the source 15 are monitored by conventional electronic sensors ( not shown ) and recorded and analyzed by computer ( not shown ). fig3 is a cross sectional view of fig1 taken along lines 3 -- 3 and presents a detailed depiction of the lens / detector assembly 17 . each lens / detector assembly 17 incorporates a plurality of movable focussing means ( such as the lenses 18 ), detectors 19 , and shielding around the detectors 19 . shielding is also placed along the longitudinal axis 23 of the assembly and longitudinally along the outside of the assembly . the axis and outside radiation shields 29 , 30 respectively , are cone - shaped and mounted between the lens 18 and the source 15 and the lens and the detector 19 . generally , the axis and outside shields can be any convenient configuration such as cone - or cylindrically - shaped . lead , iron , and brass are suitable shielding materials . s and d denote the lens - source , and the lens - detector distances respectively . lenses and detectors are mounted on tracks 22 equipped with electronic sensors . the tracks allow for independent axial movement of either or both the lens 18 and detector 19 : typically , the detector is moved in the same direction but twice as far as the lens . generally , the detector 19 comprises a sodium iodide crystal , a zinc sulfide crystal , anthracene , or some other substance or combination of substances that scintillates when contacted with ionizing radiation . also comprising the detector is a photomultiplier tube to monitor the scintillations as they occur . optionally , a 2 × 2 or 3 × 3 detector array is also suitable to enable a determination as to whether the source being imaged is on the axis of the lens or off the axis of the lens and if off - axis , to determine in which direction it is off - axis . in the case of the 2 × 2 array , the source is on axis when the counting rate in all four segments is equal . in the 3 × 3 array , is source is on axis when most of the radiation interacts with the central detector and the other detectors have equally weak count rates . the 3 × 3 array can also be used to obtain the lowest background possible . if the center detector is large enough to intercept all of the focused radiation when the source is on axis , then one needs to consider only the background in the center detector . furthermore , an energy sum coincidence can be made between the center detector and the outside detectors that can increase the efficiency for detecting the full energy of the gamma ray , thus increasing the full energy count rate without increasing the background count rate . thus , one has the efficiency of a large detector for detecting the full energy of the gamma ray , while retaining the low background counting rate of only the central detector . the detector could also be a solid state detector made of silicon or germanium or a composite material such as cdte . when radiation is absorbed by these detectors , positive and negative charges are generated that can be collected and measured with suitable electronics . these detectors have much better energy resolution and thus lower background counting rates . this would allow one to detect weaker sources . these detectors are , however , much more expensive . in order to focus x - ray and gamma radiation , the present invention utilizes the phenomenon of crystal diffraction which is illustrated in fig4 . fig4 a depicts the phenomenon known as laue diffraction . the incident radiation beam 31 enters through one surface of a diffracting crystal . after interacting with a specific array of parallel atomic layers 34 , the radiation beam is split into two beams , a transmitted beam 32 , and a diffracted beam 33 , with both beams exiting through a surface opposite to the one through which the radiation entered . both the transmitted and the diffracted beams are produced by a coherent superposition of scatterings by atoms in the parallel crystal layers . the angle 35 between the radiation beam and the crystal layers is designated as p . the maximum fraction diffracted by crystals with some mosaic structure using laue diffraction is 50 %, with the remaining fraction being transmitted without deflection . typically between 10 4 and 10 7 atomic layers are suitable to approach 50 % diffraction . the actual number of layers depends on the wavelength of the gamma rays and the width of the mosaic structure of the crystal . in practice , the maximum diffracted beam is less than 50 % because some absorption of the beam occurs as it passes through the crystal . fig4 b depicts the phenomenon known as bragg diffraction acting upon an incident beam 131 . after multiple scatterings with the atoms comprising a specific array of parallel atomic layers 134 , the net outcome is the emergence of a &# 34 ; diffracted &# 34 ; beam 133 , which contains nearly all of the incident energy . some absorption of the radiation occurs during this process which continues until either the radiation is diffracted out of the crystal or is absorbed in the crystal . the angle 135 between the radiation beam and the crystal layers is designated as p . the diffracted beam exits through the same surface as the one through which the radiation entered . again , the beam is produced by a coherent superposition of scatterings by atoms in the parallel crystal layers . bragg diffraction is most effective for energies below 200 kev and the fraction diffracted can reach 90 %. for both laue and bragg diffraction , diffraction occurs only when the bragg condition is obeyed , ( equation 1 ): where λ is the radiation wavelength , d hkl the spacing between the atomic layers indicated by the miller indices h , k , l and p the angle between the direction of the radiation beam and the atomic layers ( one can convert energy e in kev to wavelength λ in angstrom units by using the relation λ = 12 . 397 / e ). with perfectly parallel atomic layers , only rays within a few arc seconds of p will be diffracted ( i . e ., the &# 34 ; acceptance angle &# 34 ; is only a few seconds of arc ), so that one can obtain a large diffraction efficiency only if the rays are nearly parallel , i . e . only if the source is very far away . as seen in fig5 this problem can be overcome ( i . e . the acceptance angle can be increased ). fig5 a shows that for laue diffraction , if imperfections are either naturally present or else artificially introduced within the crystal so that all the crystal planes are no longer parallel to each other , rays coming at different angles 39 will still find planes 40 for which the bragg condition is obeyed . as seen in fig5 a the imperfections in the crystal give rise to a three dimensional mosaic structure . the angle 41 between the rays 35 with the lowest angle p and those 39 with the largest p is the acceptance angle . fig5 b shows that for bragg diffraction the acceptance angle can be increased if the crystal is curved in the direction of the radiation beam . rays coming at different angles 139 will still find planes 140 for which the bragg condition will be obeyed . the angle 141 between the rays 135 with the lowest angle p and the rays 139 with the largest p is the acceptance angle . the curved shape of the crystals produces a significant focusing effect . the highest degree of focusing for bragg diffraction occurs when the radius of curvature is equal to l / sin p , where l is the distance from the source to the lens . furthermore , a mosaic structure in the crystal produces an increase in the acceptance angle in the same manner as described above for laue diffraction . each crystal diffraction lens 18 utilizes a plurality of diffracting crystals . possible crystalline materials include , but are not limited to , silicon , quartz , tin , molybdenum , germanium , and copper . fig6 is a view of fig3 along lines 6 -- 6 depicting a typical embodiment of a lens 18 in the laue diffraction configuration . each lens 18 comprises a support substrate 43 typically a metal plate . stainless steel , brass , tungsten , and aluminum are suitable materials for the substrate 43 with stainless steel , brass , and tungsten having the advantage of better shielding the detector from radiation that was not diffracted by the crystals 42 . regions of the surface of the plate 43 define a series of apertures 44 arranged as concentric rings 45 . each ring contains a plurality of diffracting crystals 42 of the same material and orientation . the material and orientation are determined according to the procedure described below . the innermost ring has a diameter of about 2 . 7 cm and the outermost ring has a diameter of about 11 . 6 cm . fig7 is a view of fig3 along lines 6 -- 6 and depicts a typical embodiment for lens 18 in the bragg configuration . the significant difference is that the curved apertures 125 are much wider than the corresponding apertures 44 in fig6 a . for both laue and bragg diffraction , the diffracting crystals are mounted onto the plate in such a manner that once mounted , all the crystals in a ring will be so oriented as to use the same set atomic layers to satisfy the bragg condition . in a typical embodiment , the crystals in a given ring are all of the same material but crystals in different rings may be of different materials . the first step in determining the material and orientation of the diffracting crystals is to select the energy of the radiation that will be observed and the focal length f of the focussing means 18 one wants to achieve . in the simplest embodiment of the invention , a single lens is utilized , in a lens / detector array 17 , but a lens / detector assembly 17 having a plurality of lenses is also suitable . where lenses of focal length f1 , f2 , f3 , etc . . . are placed in close proximity or contact with each - other , the focal length of the combination is given by equations 2 through 6 . equation 2 gives the focal length for one lens , where p is the bragg angle used in the lens and r is the radius of the crystal ring . equation 3 gives the focal length for two lens , where p 1 and p 2 are the bragg angles used in the first and second lenses and r 1 and r 2 are the radii used in the first and second lens , respectively . equation 4 gives the focal length for three lenses , where p 1 , p 2 and p 3 are the bragg angles used in the first and second and third lenses and r 1 , r 2 and r 3 are the radii used in the first , second and third lenses , respectively . f . sub . 123 =( r . sub . 1 - r . sub . 2 )/ tan 2p . sub . 1 +( r . sub . 2 - r . sub . 3 )/ tan ( 2p . sub . 1 + 2p . sub . 2 )+ r . sub . 3 / tan ( 2p . sub . 1 + 2p . sub . 2 + 2p . sub . 3 )( 4 ) if the lenses are very close together , then the r &# 39 ; s become approximately equal and the approximate formula for the focal length is given by equation 5 . if all of the bragg angles are quite small , the focal length can be approximated by equation 6 the set of atomic layers to be used for each ring 45 is determined by the condition that all the rings must have the same focal length f . for rays near the lens axis ( small p ) the relation between lens - source distance s , lens - detector distance d , and focal length f is given approximately by equation 7 . in practice s and d as shown in fig3 are both chosen to be 2f and the image formed onto the detector is about the same size as the source if the source is larger than the crystal elements in the crystal . if the crystals are bigger than the source , the image will be about twice the size of the crystals . then the bragg angle p is arctan r /( 2f ) where r is the radius of the ring . the bragg condition yields the relation between the ring radius , focal length , radiation wavelength λ , and atomic layer spacing d , given by equation ( 8 ). in practice , a gamma ray with a specific energy ( and therefore wavelength λ ) is selected . then , the crystalline plane spacings of an available crystal are tabulated . this information is combined with the desired focal length f to arrive at the respective radii r for the crystal rings , pursuant to equation 10 : alternately , λ is determined from the desired gamma ray energy , then f is chosen , and the available values of dhkl are identified , so that the values of r for the rings are suitable . copper and germanium are suitable for radiation energies above 100 kev . lower atomic number materials such as quartz , silicon , and beryllium are more suitable for low energy gamma rays ( below 100 kev .) in a preferred embodiment for a laue diffraction lens , copper crystals grown at and obtainable from a facility such as the institut langevin - langmuir ( ill ) in grenoble , france , are utilized . copper crystals naturally exhibit enough imperfections in their crystal lattice so that their acceptance angle is of the order 200 to 500 seconds of arc , i . e . between 0 . 06 and 0 . 15 degrees . heating and then compressing copper crystals increases the acceptance angle even further . referring to fig8 a , ill typically provides cylindrical copper crystals 51 of 10 cm . in diameter and 25 cm . long , with a predetermined crystal orientation . thin slabs 53 , of 2 to 3 mm thickness 55 , are cut parallel to the planes 57 designated by the miller indices that have been selected . as shown in fig8 b , the slabs 53 are then cut in turn into crystals 42 with faces 59 approximately 2 mm square . the faces 59 are perpendicular to the planes 57 . mounting of the crystals 42 onto the plate 43 can occur in a variety of ways . one way is to first place the plate 43 against a rigid flat surface so that the flat surface is accessible though the concentric ring apertures 45 . a number of crystals 42 are placed on the flat surfaces within the confines of the ring 45 with the face 59 of the crystals 42 ( i . e ., the face that corresponds to the plane selected as described supra ) flush against the rigid flat surface . enough crystals are placed in the ring to virtually fill the ring aperture . the crystals are then cemented together . upon completion of the mounting procedure , the face 59 of the crystals that is perpendicular to the planes 57 whose miller indices have been selected is perpendicular to the lens / detector assembly axis 23 . ( see fig3 ) the area of this crystal face ( 2 mm square is suitable , as suggested supra ) and the width of the mosaic structure determine the ultimate size of the image spot at the detector location 19 . crystal face 59 surface areas as small as 1 mm square are suitable . copper and germanium crystals are suitable for radiation energies above 100 kev . lower atomic number materials such as quartz , silicon , and beryllium are more suitable for low energy gamma rays , i . e ., below 100 kev . fig9 a is a detailed view of one of the curved apertures 44 shown in fig6 that contain the crystals 42 . as shown , the crystals can be large enough to entirely fill the face of the aperture 44 or , if smaller than the aperture , they can be stacked on top of each other . in either configuration , once in place the crystals are then cemented into the containing means 44 . in the instant embodiment , the containing means is the curved apertures . the face 59 of the crystals that is perpendicular to the planes 57 whose miller indices have been selected is parallel to the plane of the substrate 43 . alternatively , as shown in fig9 b , one may cut the crystals into thin strips 61 having a length 63 of perhaps 1 to 20 cm . the strips 61 are arranged in stacks 66 of a predetermined height 62 ( for example 1 mm to 4 mm in height ), and then bent into circular arc sections of the same radius as the ring 45 to be mounted therein . this procedure is more suitable when the crystalline materials are malleable . as an option , and as depicted in fig9 c , one may increase the fraction of the radiation that is diffracted onto the detector if the crystals 42 are cut with a wedge - like cross section and then stacked in the aperture 44 so that radiation 41 incident on each crystal is diffracted onto the detector . this wedge construction essentially increases the solid angle that the crystals in the lens can cover . as such , lens efficiency is concomitantly increased with a 2 - or 3 - fold increase in intensity of the diffracted beam . generally , crystals of malleable materials ( e . g . copper , molybdenum and tin ) or crystals of materials with low melting points are especially suitable in that they exhibit a high degree of mosaic structure . with suitable treatment , however , many other crystal types ( and not just those from malleable elements ) can be made to exhibit mosaic structure resulting in acceptance angels of 200 to 500 seconds of arc . methods for introducing such mosaic structure include neutron irradiation , heating the crystal to near its melting point and then subjecting it to stresses or compression , subjecting the crystal to mechanical vibrations ( e . g . sonic vibrations ), and introducing impurities ( i . e . dopants ). generally , the higher the atomic number of the material , the more efficient it is for diffraction of high energy gamma - rays . fig1 is a cross - sectional view of a laue diffraction lens 18 taken along lines 10 -- 10 in fig6 . a wide variety of crystals are suitable for a bragg diffraction . this is because the diffracted beam does not have to pass completely through the crystal and be reduced in intensity by absorption of the full thickness of the crystal . the diffraction efficiency for bragg diffraction is determined by the ratio of the diffraction coefficient per unit length to the absorption coefficient per unit length . since the ratio of these two quantities remains nearly the same for low gamma ray energies , the diffraction efficiency does not change as dramatically with changing energy as it does in the laue diffraction case . for bragg diffraction with bent crystals 42 ( see fig1 and fig1 ), a large mosaic structure is not required in order to achieve a large acceptance angle . all that is required is that one be able to cut the crystals to form bendable strips of suitable dimensions . exemplary dimensions are strips 1 to 2 mm wide , 0 . 5 to 2 mm thick , and 2 to 20 cm long . the crystal strips are then bent to a radius of 1 m or more , perpendicular to the crystal &# 39 ; s long axis . the needed radius of curvature is equal to the distance from the source to the lens divided by sin p . the typical length of a strip is given by the width of the aperture 125 divided by sin p . in the case of the bent bragg crystals , the width of the mosaic structure controls the size of the field of view of the lens . thus , one can adjust the size of the field of view independently of the size of the solid angle subtended by the crystals . crystalline planes are selected and crystal strips are cut in much the same way as described in conjunction with laue diffraction . fig1 is a three dimensional view of a bragg lens . the bragg crystals 42 are mounted on the concave surfaces of a plurality of coaxial cylindrical supports 159 . fig1 is a cross - sectional view of fig1 along lines 12 -- 12 , and fig1 is a detailed view of fig1 . fig1 depicts how the crystals 42 are mounted on the supports 159 . said supports 159 are in turn mounted in a substrate 43 containing apertures 125 arranged as concentric rings 45 . as can be seen in fig1 , the apertures 125 corresponding to each ring 45 are much wider than the crystal thickness 150 in order to allow the radiation beam 153 to impact upon all of the crystal face 156 . the supports 159 that are provided for the bent crystals are shaped so that the radius of the support surface 162 matches that of the bent crystal . one such support can be a machined surface integrally molded , or removably attached to the substrate 43 . the use of bent bragg crystals in the lens allows one to focus the diffracted beam from an individual crystal into a narrow line parallel to the diffraction planes and on the axis 23 of the assembly 17 . this concentrates the diffracted beams from the full lens and makes it possible to use a smaller detector in the focal plane . the length 162 of the crystals 42 and the supports 159 is 2 to 20 cm in the direction of the beam 153 . generally , the longer crystals are closest to the lens axis 23 , where the values of sin p are smallest . the length of the crystal strips are adjusted to obtain the maximum diffracted flux . the lens detector assembly achieves its best performance for sources located on or very near the axis of the assembly . when the source 15 is not situated on the axis of the assembly , the movable platform 16 is advanced until the source is positioned on the axis of the assembly . in order to scan across the source 15 , one may change the position of the body 12 using the means provided for moving the table 16 . alternatively , one may change the orientation of the lens / detector assemblies and adjust the source / lens and lens / detector distances as indicated by equation 3 by means of the tracks 22 on which lenses and detectors are mounted . in yet another alternative , one can move the whole lens system relative to the source . also , equation 5 shows the focal length &# 39 ; s dependence on the wavelength of the radiation . the lens 18 and detector 19 are mounted on tracks 22 allowing the use of a given lens to detect radiation of a different wavelength by adjusting lens - source and lens - detector distances as dictated by equation 3 . electronic sensors are mounted on tracks 22 and their signals are recorded and analyzed by the computer . instead of relying on tracks 22 , imaging of radiation of different wavelengths can also be accomplished by using different lenses , and keeping the elements of the assembly stationary . for example , a source having a first energy can be scanned in toto by moving the table 16 with respect to the center of the lens / detector arrays ( see fig1 ). if the device is to be used for gamma rays of a second energy , one can construct a plurality of different lenses using crystals with atomic spacings so chosen that one obtains the same focal length as the lenses used to focus the first source . signals from the detectors 19 are analyzed by a computer in conjunction with the data from the scintillation detectors 20 and those from the sensors on the movable platform 16 and the lens and detector tracks 22 . a variety of crystalline materials ( germanium , silicon , copper and quartz ) have been found by the applicant to be suitable for the fabrication of x - ray and gamma - ray lenses for energies of around 150 kev . specifically , a prototype laue crystal diffraction lens was constructed and tested early in the lens project at argonne national laboratory consisting of a ring of quartz crystals cubes , 5 mm × 5 mm × 5 mm mounted in a ring with a radius of 18 cm . this lens had a focal length for 140 . 4 kev gamma rays of 1 . 58 meters ( m ). this lens was also tested with the 59 . 54 kev gamma ray from 241 am where the focal length was 0 . 64 m . tests were made at a series of distances between the lens and the source : 1 . 28 m , 1 . 92 m , 2 . 56 m , 3 . 20 m , and 3 . 84 m . these early tests laid the ground work for the development of this technology . while the invention has been described with reference to details of the illustrated embodiment , these details are not intended to limit the scope of the invention as defined in the appended claims .
a device for imaging a plurality of sources of x - ray and gamma - ray radiation is provided . diffracting crystals are used for focussing the radiation and directing the radiation to a detector which is used for analyzing their addition to collect data as to the location of the source of radiation . a computer is used for converting the data to an image . the invention also provides for a method for imaging x - ray and gamma radiation by supplying a plurality of sources of radiation ; focussing the radiation onto a detector ; analyzing the focused radiation to collect data as to the type and location of the radiation ; and producing an image using the data .