Doping and temperature dependences of minority-carrier diffusion length and lifetime deduced from the spectral response measurements of p-N junction solar cells
Ching Yuan Wu*, Jenn-Fang Chen
The minority-carrier diffusion length in the base region of p+-n (n+-p) junction solar cells has been deduced from the relative spectral response in the long wavelength. The doping and temperature dependences of minority-carrier diffusion length have also been characterized. It has been shown that the minority-carrier diffusion length is slightly increased with increasing temperature and is decreased with increasing doping concentration. Based on the known minority-carrier diffusivity as functions of doping concentration and temperature, the doping and temperature dependences of minority-carrier lifetimes have been deduced. It has been verified that the empirical relationship between minority-carrier lifetime and doping concentration deduced by other method is in good agreements with our experimental measurements. Moreover, it has been shown that the minority-carrier lifetime is increased with increasing temperature, which is consistent with that measured by the open-circuit voltage decay (OCVD) method.
Solid State Electronics
https://doi.org/10.1016/0038-1101(82)90071-5
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Doping (additives) Engineering & Materials Science 100%
diffusion length Physics & Astronomy 96%
Solar cells Engineering & Materials Science 94%
minority carriers Physics & Astronomy 94%
spectral sensitivity Physics & Astronomy 92%
Carrier lifetime Engineering & Materials Science 85%
Solar Cell Chemical Compounds 77%
solar cells Physics & Astronomy 66%
Wu, C. Y., & Chen, J-F. (1982). Doping and temperature dependences of minority-carrier diffusion length and lifetime deduced from the spectral response measurements of p-N junction solar cells. Solid State Electronics, 25(7), 679-682. https://doi.org/10.1016/0038-1101(82)90071-5
Wu, Ching Yuan ; Chen, Jenn-Fang. / Doping and temperature dependences of minority-carrier diffusion length and lifetime deduced from the spectral response measurements of p-N junction solar cells. In: Solid State Electronics. 1982 ; Vol. 25, No. 7. pp. 679-682.
@article{d12d875dcbdd4fc580a241f5304dc0f6,
title = "Doping and temperature dependences of minority-carrier diffusion length and lifetime deduced from the spectral response measurements of p-N junction solar cells",
abstract = "The minority-carrier diffusion length in the base region of p+-n (n+-p) junction solar cells has been deduced from the relative spectral response in the long wavelength. The doping and temperature dependences of minority-carrier diffusion length have also been characterized. It has been shown that the minority-carrier diffusion length is slightly increased with increasing temperature and is decreased with increasing doping concentration. Based on the known minority-carrier diffusivity as functions of doping concentration and temperature, the doping and temperature dependences of minority-carrier lifetimes have been deduced. It has been verified that the empirical relationship between minority-carrier lifetime and doping concentration deduced by other method is in good agreements with our experimental measurements. Moreover, it has been shown that the minority-carrier lifetime is increased with increasing temperature, which is consistent with that measured by the open-circuit voltage decay (OCVD) method.",
author = "Wu, {Ching Yuan} and Jenn-Fang Chen",
doi = "10.1016/0038-1101(82)90071-5",
journal = "Solid-State Electronics",
Wu, CY & Chen, J-F 1982, 'Doping and temperature dependences of minority-carrier diffusion length and lifetime deduced from the spectral response measurements of p-N junction solar cells', Solid State Electronics, vol. 25, no. 7, pp. 679-682. https://doi.org/10.1016/0038-1101(82)90071-5
Doping and temperature dependences of minority-carrier diffusion length and lifetime deduced from the spectral response measurements of p-N junction solar cells. / Wu, Ching Yuan; Chen, Jenn-Fang.
In: Solid State Electronics, Vol. 25, No. 7, 01.01.1982, p. 679-682.
T1 - Doping and temperature dependences of minority-carrier diffusion length and lifetime deduced from the spectral response measurements of p-N junction solar cells
AU - Wu, Ching Yuan
AU - Chen, Jenn-Fang
N2 - The minority-carrier diffusion length in the base region of p+-n (n+-p) junction solar cells has been deduced from the relative spectral response in the long wavelength. The doping and temperature dependences of minority-carrier diffusion length have also been characterized. It has been shown that the minority-carrier diffusion length is slightly increased with increasing temperature and is decreased with increasing doping concentration. Based on the known minority-carrier diffusivity as functions of doping concentration and temperature, the doping and temperature dependences of minority-carrier lifetimes have been deduced. It has been verified that the empirical relationship between minority-carrier lifetime and doping concentration deduced by other method is in good agreements with our experimental measurements. Moreover, it has been shown that the minority-carrier lifetime is increased with increasing temperature, which is consistent with that measured by the open-circuit voltage decay (OCVD) method.
AB - The minority-carrier diffusion length in the base region of p+-n (n+-p) junction solar cells has been deduced from the relative spectral response in the long wavelength. The doping and temperature dependences of minority-carrier diffusion length have also been characterized. It has been shown that the minority-carrier diffusion length is slightly increased with increasing temperature and is decreased with increasing doping concentration. Based on the known minority-carrier diffusivity as functions of doping concentration and temperature, the doping and temperature dependences of minority-carrier lifetimes have been deduced. It has been verified that the empirical relationship between minority-carrier lifetime and doping concentration deduced by other method is in good agreements with our experimental measurements. Moreover, it has been shown that the minority-carrier lifetime is increased with increasing temperature, which is consistent with that measured by the open-circuit voltage decay (OCVD) method.
U2 - 10.1016/0038-1101(82)90071-5
DO - 10.1016/0038-1101(82)90071-5
JO - Solid-State Electronics
JF - Solid-State Electronics
Wu CY, Chen J-F. Doping and temperature dependences of minority-carrier diffusion length and lifetime deduced from the spectral response measurements of p-N junction solar cells. Solid State Electronics. 1982 Jan 1;25(7):679-682. doi: 10.1016/0038-1101(82)90071-5