US8786064B2 - Semiconductor package and method for manufacturing the same and semiconductor package module having the same - Google Patents
Semiconductor package and method for manufacturing the same and semiconductor package module having the same Download PDF
bottom surface
semiconductor package
Jin Su Kim
Ji Man RYU
Soon Gyu Yim
Samsung Electro Mechanics Co Ltd
2011-10-27 Priority to KR1020110110490A priority Critical patent/KR101354894B1/en
2011-10-27 Priority to KR1020110110490 priority
2012-01-30 Application filed by Samsung Electro Mechanics Co Ltd filed Critical Samsung Electro Mechanics Co Ltd
2012-01-30 Assigned to SAMSUNG ELECTRO-MECHANICS CO., LTD. reassignment SAMSUNG ELECTRO-MECHANICS CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: KIM, JIN SU, RYU, JI MAN, YIM, SOON GYU
H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
H01L23/00—Details of semiconductor or other solid state devices
H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
H01L23/495—Lead-frames or other flat leads
H01L23/49503—Lead-frames or other flat leads characterised by the die pad
H01L23/49513—Lead-frames or other flat leads characterised by the die pad having bonding material between chip and die pad
H01L23/49517—Additional leads
H01L23/49524—Additional leads the additional leads being a tape carrier or flat leads
H01L23/49531—Additional leads the additional leads being a wiring board
H01L23/49575—Assemblies of semiconductor devices on lead frames
H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
H01L2224/42—Wire connectors; Manufacturing methods related thereto
H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
H01L2224/4805—Shape
H01L2224/4809—Loop shape
H01L2224/48091—Arched
H01L2224/481—Disposition
H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
H01L2224/732—Location after the connecting process
H01L2224/73251—Location after the connecting process on different surfaces
H01L2224/73265—Layer and wire connectors
H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
H01L2224/8319—Arrangement of the layer connectors prior to mounting
H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
H01L2224/92—Specific sequence of method steps
H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
H01L2224/9222—Sequential connecting processes
H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
H01L24/42—Wire connectors; Manufacturing methods related thereto
H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
H01L2924/0001—Technical content checked by a classifier
H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
H01L2924/10—Details of semiconductor or other solid state devices to be connected
H01L2924/11—Device type
H01L2924/13—Discrete devices, e.g. 3 terminal devices
H01L2924/1301—Thyristor
H01L2924/13034—Silicon Controlled Rectifier [SCR]
H01L2924/1304—Transistor
H01L2924/1305—Bipolar Junction Transistor [BJT]
H01L2924/13055—Insulated gate bipolar transistor [IGBT]
H01L2924/1306—Field-effect transistor [FET]
H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
H01L2924/151—Die mounting substrate
H01L2924/156—Material
H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
H01L2924/181—Encapsulation
H01L2924/183—Connection portion, e.g. seal
H01L2924/18301—Connection portion, e.g. seal being an anchoring portion, i.e. mechanical interlocking between the encapsulation resin and another package part
H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
H01L2924/19101—Disposition of discrete passive components
H01L2924/19107—Disposition of discrete passive components off-chip wires
Disclosed herein is a semiconductor chip, including: a first substrate having a concave formed on one surface thereof and an opening formed on a bottom surface of the concave; a second substrate contacting the other surface of the first substrate; and a semiconductor chip mounted in the concave.
CROSS REFERENCE TO RELATED APPLICATION
This application claims the benefit of Korean Patent Application No. 10-2011-0110490, filed on Oct. 27, 2011, entitled "Semiconductor Package and Method for Manufacturing the Same and Semiconductor Package Module Having the Same", which is hereby incorporated by reference in its entirety into this application.
The present invention relates to a semiconductor package and a method for manufacturing the same and a semiconductor package module having the same.
The trend for electronics has developed toward miniaturization and thinness regardless of an application field. The main focus has still been that the size decreases, while reliability should be maintained as it is or improved.
For example, in the case of products that deal with electric power, a factor for the reliability degradation, which is called heat generation is added and reliability should be considered more deeply than all other application fields.
In particular, when a plurality of power semiconductors are grouped to implement one module, issues such as thermal accumulation, property degradation by heat, and life-span reduction may serve as risk factors causing the concepts and structures of products to be changed in a second.
Meanwhile, examples of forgiving the reduction of a manufacturing cost have rapidly increased for the purpose of improving the reliability of the product.
The power semiconductor module in the related art is disclosed in Korean Patent No. 2001-0111736 (Korean unexamined publication).
The power semiconductor module in the related art uses a first substrate with a circuit and a second substrate performing a heat dissipating function, which are bonded to each other.
In this case, an adhesive containing an epoxy-based resin or solder is used in order to bond the first substrate and the second substrate and the first substrate and a semiconductor chip are bonded by using the same material as the adhesive or another adhesive.
However, the above method is disadvantageous in that a plurality of substrates are bonded or the substrate and the semiconductor chip are bonded by using the adhesive of the same material or adhesives of different materials, and as a result, heterogeneous materials are formed among the components, thereby reducing thermal and mechanical reliabilities among the components.
Further, since a method using two processes, i.e., bonding the first substrate and the second substrate and bonding the semiconductor chip onto the first substrate of bonding is used, processes as many as the components should be performed. Therefore, a process time increases and thus, efficiency decreases and as the number of processes increases, the quantity of used materials also increases, thereby causing a manufacturing cost to increase.
The present invention has been made in an effort to provide a semiconductor package and a method for manufacturing the same and a semiconductor package module having the same that can simplify a process, reduce a manufacturing cost, and improve heat-proof reliability.
According to a preferred embodiment of the present invention, there is provided a semiconductor chip, including: a first substrate having a concave formed on one surface thereof and an opening formed on a bottom surface of the concave; a second substrate contacting the other surface of the first substrate; and a semiconductor chip mounted in the concave.
In this case, the semiconductor package may further include a bonding section interposed between the first substrate and the second substrate.
Herein, the bonding section may contact the semiconductor chip mounted in the concave through the opening of the first substrate and the bonding section may be made of solder, a non-conductive epoxy-based resin, a conductive resin, or a conductive film.
Further, the first substrate and the second substrate may be a metallic substrate, a ceramic substrate, or an epoxy based resin substrate.
According to another preferred embodiment of the present invention, there is provided a method for manufacturing a semiconductor package, including: preparing a first substrate having a concave formed on one surface thereof and an opening formed on a bottom surface of the concave and a second substrate having a plate shape; forming an adhesive layer on one surface of the second substrate; bonding the other surface of the first substrate to one surface of the second substrate with the adhesive layer; mounting a semiconductor chip in the concave of the first substrate; and bonding the semiconductor chip, and the first substrate and the second substrate by performing a hardening process.
The adhesive layer may be made of solder, a non-conductive epoxy-based resin, a conductive resin, or a conductive film and the first substrate and the second substrate may be a metallic substrate, a ceramic substrate, or an epoxy based resin substrate.
According to yet another preferred embodiment of the present invention, there is provided a semiconductor package module, including: a first substrate having one or more concaves formed on one surface of one side thereof and an opening formed on a bottom surface of the concave; a second substrate having one surface of one side thereof contacting the other surface of one side of the first substrate; and a first semiconductor chip mounted in the concave, and the other side of the first substrate may protrude from the second substrate to the outside.
In this case, the semiconductor package module may further include a bonding section interposed between the other surface of one side of the first substrate and one surface of one side of the second substrate.
Herein, the bonding section may contact the semiconductor chip mounted in the concave through the opening of the first substrate.
The bonding section may be made of solder, a non-conductive epoxy-based resin, a conductive resin, or a conductive film.
The first substrate may be a lead frame made of copper (Cu).
The semiconductor package module may further include: a third substrate contacting the other side of one surface of the second substrate; and a second semiconductor chip mounted on the third substrate.
The semiconductor package module may further include the lead frame electrically connected with the third substrate.
Herein, the third substrate may be a printed circuit board (PCB).
The semiconductor package module may further include a connection member electrically connecting the first semiconductor chips mounted in the one or more concaves to each other.
Herein, the connection member may be a tape type, a frame type, or a ribbon type.
The semiconductor package module may further include a molding material formed to surround a top surface of the first semiconductor chip from a side surface of the second substrate and a part of an area of the molding material corresponding to the first semiconductor chip may be removed in a thickness direction from the surface thereof.
FIG. 1 is a cross-sectional view illustrating the structure of a semiconductor package according to a preferred embodiment of the present invention;
FIGS. 2 to 4 are cross-sectional views sequentially illustrating the process of manufacturing a semiconductor package according to a preferred embodiment of the present invention;
FIG. 5 is a cross-sectional view illustrating the structure of a semiconductor package module according to a preferred embodiment of the present invention;
FIG. 6 is a cross-sectional view illustrating the structure of a semiconductor package module according to another preferred embodiment of the present invention; and
FIG. 7 is a cross-sectional view illustrating the structure of a semiconductor package module according to yet another preferred embodiment of the present invention.
DESCRIPTION OF THE PREFERRED EMBODIMENTS
Various features and advantages of the present invention will be more obvious from the following description with reference to the accompanying drawings.
The terms and words used in the present specification and claims should not be interpreted as being limited to typical meanings or dictionary definitions, but should be interpreted as having meanings and concepts relevant to the technical scope of the present invention based on the rule according to which an inventor can appropriately define the concept of the term to describe most appropriately the best method he or she knows for carrying out the invention.
The above and other objects, features and advantages of the present invention will be more clearly understood from the following detailed description taken in conjunction with the accompanying drawings. In the specification, in adding reference numerals to components throughout the drawings, it is to be noted that like reference numerals designate like components even though components are shown in different drawings. In describing the present invention, a detailed description of related known functions or configurations will be omitted so as not to obscure the gist of the present invention. In the description, the terms "first", "second", "one surface", "the other surface" and so on are used to distinguish one element from another element, and the elements are not defined by the above terms.
Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.
FIG. 1 is a cross-sectional view illustrating the structure of a semiconductor package according to a preferred embodiment of the present invention.
Referring to FIG. 1, a semiconductor package 100 according to the preferred embodiment includes a first substrate 101 having a concave 101 a formed on one surface thereof, a second substrate 103 positioned on the other surface of the first substrate 101, and a semiconductor chip 107 mounted in the concave.
In the first substrate 101, the concave 101 a may be formed on one surface thereof and an opening 101 c may be formed on a bottom surface 101 b of the formed concave 101 a as shown in FIG. 1.
In the preferred embodiment, a metallic substrate, a ceramic substrate, and a substrate made of an epoxy resin may be used as the first substrate 101, but is not particularly limited thereto and even any material to form a circuit pattern may be used.
Herein, the metallic substrate may be made of copper (Cu), but is not particularly limited thereto.
The second substrate 103 may be positioned to contact the other surface of the first substrate 101, i.e., an opposite surface to a surface of the first substrate 101 where the concave 101 a is formed, as shown in FIG. 1.
Herein, the metallic substrate, the ceramic substrate, and the substrate made of the epoxy resin may be used as the second substrate 103, but is not particularly limited thereto. In this case, the metallic substrate may be made of copper (Cu), but is not particularly limited thereto.
Further, in the preferred embodiment, the second substrate 103 may have a plate shape, but is not particularly limited thereto.
In the preferred embodiment, the semiconductor chip 107 may be mounted in the concave 101 a of the first substrate 101. Specifically, the semiconductor chip 107 may be mounted to contact the opening 101 c formed on the bottom surface 101 b of the concave 101 a of the first substrate 101.
In the preferred embodiment, the semiconductor chip 107 may include a power element and a control element for controlling the power element, but is not particularly limited thereto.
Herein, the power element may include a silicon controlled rectifier (SCR), a power transistor, an insulated gate bipolar transistor (IGBT), a MOS transistor, a power rectifier, a power regulator, an inverter, a converter, or a high-power semiconductor chip or diode constituted by combinations thereof, but is not particularly limited thereto.
Further, the control element may include a low-power semiconductor chip for controlling the power element.
In addition, the semiconductor package 100 according to the preferred embodiment may further include a bonding section 105 interposed between the first substrate 101 and the second substrate 103.
Herein, the bonding section 105 may be made of solder, a non-conductive epoxy based resin, a conductive resin, or a conductive film, but is not particularly limited thereto.
In the preferred embodiment, the bonding section 105 may be joined with the semiconductor chip 107 of which a part 106 is inserted into the concave 101 a of the first substrate 101 through the opening 101 c of the first substrate 101, as shown in FIG. 1.
That is, the part 106 of the bonding section 105 interposed between the first substrate 101 and the second substrate 103 is inserted into the concave 101 a of the first substrate 101 through the opening 101 c of the first substrate 101 to contact the semiconductor chip 107.
As described above, since the semiconductor package 100 according to the preferred embodiment has a structure in which all the components of the semiconductor package 100, i.e., the first substrate, 101, the second substrate 103, and the semiconductor chip 107 are integratively connected by one bonding section 105 or 106), the semiconductor package 100 may improve reliability of a product.
Method for Manufacturing Semiconductor Package
FIGS. 2 to 4 are cross-sectional views sequentially illustrating the process of manufacturing a semiconductor package according to a preferred embodiment of the present invention.
Referring to FIG. 2, a first substrate 101 and a second substrate 103 are prepared, an adhesive layer 105A is formed on one surface of the second substrate 103, and thereafter, the other surface of the first substrate 101 is bonded to one surface of the second substrate 103.
In the preferred embodiment, in the first substrate 101, a concave 101 a may be formed on one surface thereof and an opening 101 c may be formed on a bottom surface 101 b of the formed concave 101 a as shown in FIG. 2.
Further, the second substrate 103 may have a plate shape, but is not particularly limited thereto.
Herein, a metallic substrate, a ceramic substrate, and an epoxy based resin substrate may be used as the second substrate 103, but is not particularly limited thereto. In this case, copper (Cu) may be used as metal, but is not particularly limited thereto.
In the preferred embodiment, the adhesive layer 105A formed on one surface of the second substrate 103 may be made of solder, a non-conductive epoxy based resin, a conductive resin, or a conductive film, but is not particularly limited thereto.
The first substrate 101 is positioned on one surface of the second substrate 103 with the other surface of the first substrate 101 contacting one surface of the second substrate where the adhesive layer 105A is formed and thereafter, the first substrate 101 is pre-bonded to the second substrate, 103 by applying predetermined pressure to one surface of the first substrate 101.
In this case, by applying the predetermined pressure, the part 106 of the adhesive layer 105A may be inserted into the concave 101 a through the opening 101 c of the first substrate 101.
Next, referring to FIG. 3, the semiconductor chip 107 may be mounted in the concave 101 a of the first substrate 101.
Herein, the semiconductor chip 107 may be mounted on a partial adhesive layer 106 that is inserted into the concave 101 a through the opening 101 c of the first substrate 101. In this case, referring to FIG. 3, predetermined pressure is applied to the top surface of the semiconductor chip 107, which is pressed to the adhesive layer 106 to pre-bond the semiconductor chip 107 and the first substrate 101.
As described above, the semiconductor chip 107 is pressed to the partial adhesive layer 106 inserted into the concave 101 a, and as a result, the partial adhesive layer 106 inserted into the concave 101 a is dispersed to the side as shown in FIG. 3.
Next, as shown in FIG. 4, the semiconductor chip 107, and the first substrate 101 and the second substrate 103 are bonded to each other by performing a hardening process.
In the prior art, two bonding processes of bonding the first substrate 101 and the second substrate 103 to each other and thereafter, bonding the semiconductor chip 107 onto the first substrate 101 are performed, but in the preferred embodiment, the part 106 of the adhesive layer 105A protrudes through the opening 101 c by forming the opening 101 c on the first substrate 101 and the semiconductor chip 107 is pressed to the protruding part 106 of the adhesive layer, and thereafter, the hardening process. Therefore, since only one bonding process is performed, the number of processes is reduced to simplify the process.
Further, since the manufacturing of the package is completed by one bonding process, the cost of materials is also reduced, and as a result, a process cost may also be reduced.
By forming the concave 101 a on the first substrate 101 mounted with the semiconductor chip 107, a gap between the semiconductor chip 107 and the second substrate 103 is reduced, and as a result, a heat dissipating path is shortened, thereby improving a heat dissipating property.
In general, when the bonding section 105 is formed by performing the hardening process, the semiconductor chip 107 may be warped from an original position for self-alignment or rotation. In the preferred embodiment, the semiconductor chip 107 is suspended on the side of the concave 101 a to prevent the semiconductor chip 107 from moving or rotating so as to deviate from a predetermined range.
Semiconductor Package Module
FIG. 5 is a cross-sectional view illustrating the structure of a semiconductor package module according to a preferred embodiment of the present invention, FIG. 6 is a cross-sectional view illustrating the structure of a semiconductor package module according to another preferred embodiment of the present invention, and FIG. 7 is a cross-sectional view illustrating the structure of a semiconductor package module according to yet another preferred embodiment of the present invention.
First, referring to FIG. 5, a semiconductor package module 200 according to the preferred embodiment of the present invention includes a first substrate 110, a second substrate 120, and first semiconductor chips 140 a and 140 b.
In the preferred embodiment, in the first substrate 110, one or more concaves 110 a may be formed on one surface of one side 110 a and an opening 101 c may be formed on a bottom surface 101 b of each of the concaves 110 a as shown in FIG. 5.
Herein, the first substrate 110 may be a lead frame made of copper (Cu) and one side 110 a contacts the second substrate 120 and the other side 110 b may protrude from the second substrate 120 as shown in FIG. 5. The other side 110 b of the first substrate 110 that protrudes may serve as an external connection terminal.
In the preferred embodiment, the second substrate 120 contacts the other surface of one side 110 a of the first substrate 110 and may further include a bonding section 130 interposed between the other surface of one side 110 a of the first substrate 110 and one surface of one side of the second substrate 120.
Herein, a part 112 of the bonding section 130 is inserted into the concave 110 a through the opening 110 c of the first substrate 110 to contact the first semiconductor chips 140 a and 140 b.
The bonding section 130 may be made of solder, a non-conductive epoxy based resin, a conductive resin, or a conductive film, but is not particularly limited thereto.
Herein, the first semiconductor chips 140 a and 140 b may include a silicon controlled rectifier (SCR), a power transistor, an insulated gate bipolar transistor (IGBT), a MOS transistor, a power rectifier, a power regulator, an inverter, a converter, or a high-power semiconductor chip or diode, constituted by combinations thereof, but is not particularly limited thereto.
In the preferred embodiment, the first semiconductor chips 140 a and 140 b inserted into the concave 110 a of the first substrate 110 may be semiconductor chips of the same type or semiconductor chips of different types.
That is, both the semiconductor chips of the same type may be inserted in the plurality of concaves 110 a formed on the first substrate 110 or different types of semiconductor chips may be inserted into the concaves 110 a.
The semiconductor package module 200 according to the preferred embodiment may further include a third substrate 150 contacting the other side of one surface of the second substrate 120 and a semiconductor chip 160 mounted on the third substrate 150.
Herein, the third substrate 150 may be a printed circuit board (PCB), but is not particularly limited thereto.
Further, the second semiconductor chip 160 may be attached onto the third substrate 150 by using an adhesive member (not shown) and the adhesive member (not shown) may be conductive or non-conductive.
For example, the adhesive member may be formed by plating or may be conductive paste or a conductive tape. Further, the adhesive member may be solder, metallic epoxy, metallic paste, a resin based epoxy, or an adhesive tape having excellent heat resistivity.
For example, the adhesive tape that may be used as the adhesive member may include a high-temperature tape such as a known commercialized glass tape, silicon tape, Teflon tape, stainless foil tape, or ceramic tape and further, the adhesive member may be formed by combining the materials, but is not particularly limited thereto.
In the preferred embodiment, the second semiconductor chip 160 may include a low-power semiconductor chip for controlling the high-power semiconductor chip, e.g., a control element for controlling a power element, but is not particularly limited thereto.
Further, the semiconductor package module 200 according to the preferred embodiment further includes a lead frame 170 electrically connected with the third substrate 150.
Herein, the lead frame 170 may be made of copper (Cu), but is not particularly limited thereto. In this case, one side 170 a of the lead frame 170 may be electrically connected with the third substrate 150 by using a wire and the other side 170 b protrudes to the outside to serve as an external connection terminal.
Further, the semiconductor package module 200 according to the preferred embodiment may further include a connection member 185 electrically connecting each of the first semiconductor chips 140 a and 140 b in each concave 110 a of the first substrate 110 as shown in FIG. 6.
Herein, the connection member 185 may be made of copper (Cu) and as shown in FIG. 6, the connection member 185 may be a tape type, a frame type, or a ribbon type, but is not particularly limited thereto.
By this configuration, by connecting the semiconductor chips to each other by using the linear connection member 185 instead of the arch-type wire, parts H of a molding material 190 at positions corresponding to portions where the first semiconductor chips 140 a and 140 b are mounted may be removed in a thickness direction.
As a result, a delivery path is shortened because the thickness of the molding material 190 formed on the top surface of the first semiconductor chips 140 a and 140 b is small. Therefore, a heat dissipating property can be improved.
Further, since a spare space equivalent to the removed thickness of the molding material 190 can be secured, the degree of freedom of design is improved.
As set forth above, according to preferred embodiments of the present invention, a plurality of substrates and semiconductor chips are bonded to each other through one bonding process, and a result, process efficiency is improved due to process simplification and a manufacturing cost is reduced.
Further, concaves are formed on a first substrate mounted with the semiconductor chips and the semiconductor chips are inserted and mounted into the concaves, and as a result a heat dissipating path between the semiconductor chip and the second substrate is shortened, thereby improving a heat dissipating property.
The semiconductor chips are inserted and mounted into the concaves formed on the substrate and the mounted semiconductor chips are connected to each other by using a tape-type connection member. Thereafter, by removing molding materials on the tops of the semiconductor chips in a thickness direction, the total height of a module decreases to miniaturize the module.
By bonding all components of a semiconductor package through one bonding process, bonding power increases and thermal damage of a semiconductor due to repetition of the bonding process decreases, thereby improving reliability of a product after bonding.
By forming an opening on the semiconductor chip mounted substrate, warpage phenomenon which may occur at the time of manufacturing the product can be prevented.
Although the preferred embodiments of the present invention have been disclosed for illustrative purposes, the semiconductor package and the method for manufacturing the same and the semiconductor package module having the same according to the present invention are not limited thereto and those skilled in the art will appreciate that various modifications, additions and substitutions are possible, without departing from the scope and spirit of the invention as disclosed in the accompanying claims.
Accordingly, such modifications, additions and substitutions should also be understood to fall within the scope of the present invention. A specific protective scope of the present invention could be defined by accompanying claims.
1. A semiconductor package comprising:
a first substrate having top and bottom surfaces, a concave formed on the top surface thereof and an opening formed on a bottom surface of the concave;
a second substrate having top and bottom surfaces, the bottom surface of the first substrate disposed on the top surface of the second substrate;
a semiconductor chip having top and bottom surfaces, the bottom surface of the semiconductor chip mounted in the concave; and
a bonding section interposed between the first substrate and the second substrate, the bonding section being made of solder.
2. The semiconductor package as set forth in claim 1, wherein the bonding section contacts the entire bottom surface of the semiconductor chip mounted in the concave through the opening of the first substrate.
3. The semiconductor package as set forth in claim 1, wherein the first substrate and the second substrate are a metallic substrate, a ceramic substrate, or an epoxy based resin substrate.
4. A semiconductor package module, comprising:
a first substrate having top and bottom surfaces, one or more concaves formed on the top surface thereof and an opening formed on a bottom surface of the concave;
a first semiconductor chip having top and bottom surfaces, the bottom surface of the first semiconductor chip mounted in the concave; and
a bonding section interposed between the first substrate and the second substrate, the bonding section being made of solder,
wherein one side of the first substrate protrudes from the second substrate to serve as an external connection terminal.
5. The semiconductor package module as set forth in claim 4, wherein the bonding section contacts the entire bottom surface of the first semiconductor chip mounted in the concave through the opening of the first substrate.
6. The semiconductor package module as set forth in claim 4, wherein the first substrate is a lead frame made of copper (Cu).
7. The semiconductor package module as set forth in claim 4, further comprising:
a third substrate disposed on the top surface of the second substrate; and
a second semiconductor chip mounted on the third substrate.
8. The semiconductor package module as set forth in claim 7, further comprising the lead frame electrically connected with the third substrate.
9. The semiconductor package module as set forth in claim 7, wherein the third substrate is a printed circuit board (PCB).
10. The semiconductor package module as set forth in claim 4, further comprising one or more first semiconductor chips and a connection member area contacting the top surfaces of the first semiconductor chips and electrically connecting the first semiconductor chips mounted in the one or more concaves to each other.
11. The semiconductor package module as set forth in claim 10, wherein the connection member is a tape type, a frame type, or a ribbon type.
12. The semiconductor package module as set forth in claim 4, further comprising a molding material formed to cover the top surface of the first semiconductor chip from a side surface of the second substrate.
13. The semiconductor package module as set forth in claim 12, wherein a part of an area of the molding material corresponding to the first semiconductor chip is removed in a thickness direction from the surface thereof.
14. A semiconductor package module, comprising:
a first substrate having a top surface and a bottom surface, one or more concaves formed on the top surface thereof and an opening formed on a bottom surface of the concave;
a second substrate having a top surface and a bottom surface, the bottom surface of the first substrate disposed on the top surface of the second substrate;
a third substrate having a top surface and a bottom surface, the bottom surface of the third substrate disposed on the top surface of the second substrate; and
a first semiconductor chip having a top surface and a bottom surface, the bottom surface of the first semiconductor chip mounted in the concave,
15. The semiconductor package module as set forth in claim 14, further comprising a second semiconductor chip mounted on the third substrate.
16. The semiconductor package module as set forth in claim 14, further comprising the lead frame electrically connected with the third substrate.
17. The semiconductor package module as set forth in claim 14, wherein the third substrate is a printed circuit board (PCB).
one or more first semiconductor chips having a top surface and a bottom surface, respectively, the bottom surfaces of the first semiconductor chips mounted in the concave; and
a connection member area contacting the top surfaces of the first semiconductor chips and electrically connecting the first semiconductor chips mounted in the one or more concaves to each other;
a first semiconductor chip having a top surface and a bottom surface, the bottom surface of the first semiconductor chip mounted in the concave; and
a molding material formed to cover the top surfaces of the first semiconductor chip and a third substrate from a side surface of the second substrate;
wherein a part of an area of the molding material corresponding to the first semiconductor chip is removed in a thickness direction from the surface thereof, and
US13/361,144 2011-10-27 2012-01-30 Semiconductor package and method for manufacturing the same and semiconductor package module having the same Expired - Fee Related US8786064B2 (en)
KR1020110110490A KR101354894B1 (en) 2011-10-27 2011-10-27 Semiconductor package and method for manufacturing the same and semiconductor package module having the same
KR1020110110490 2011-10-27
US13/361,144 Expired - Fee Related US8786064B2 (en) 2011-10-27 2012-01-30 Semiconductor package and method for manufacturing the same and semiconductor package module having the same
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Owner name: SAMSUNG ELECTRO-MECHANICS CO., LTD., KOREA, REPUBL
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