Physical and electrical characteristics of Ge x Sb 100−x films for use as phase-change materials
J. H. Kim, D. S. Byeon, Dae Hong Ko, J. H. Park
In this study, we investigate a GeSb binary phase to be used as a high-speed phase-change material (PCM). In particular, by varying the Ge concentration from 10 at.% to 30 at.%, we study the effects of the PCM composition on the physical and electrical properties of sputtered Ge x Sb 100−x films. The Ge 10 Sb 90 film assumes a crystal trigonal structure (Sb phase); however, phase separation occurs in the films at higher Ge concentrations (i.e., the Sb phase coexists with the crystalline Ge phase). As the Ge concentration increases, the grain size decreases, and the sheet resistances of both the amorphous and crystalline states increase. An increase in the Ge concentration in these GeSb films results in an increase in the crystallization temperature, activation energy, data retention, and band gap. The current–voltage measurements show that the threshold and RESET currents decrease with increasing Ge concentrations. In addition, we discuss the R–V curve, crystallization speed, and programming window. The results indicate that GeSb films possess favorable physical and electrical characteristics and can be used as PCMs in phase-change memory applications.
Thin Solid Films
https://doi.org/10.1016/j.tsf.2018.05.034
phase change materials
Phase change memory
Pulse code modulation
threshold currents
Phase separation
Electric properties
Crystal structure
Kim, J. H., Byeon, D. S., Ko, D. H., & Park, J. H. (2018). Physical and electrical characteristics of Ge x Sb 100−x films for use as phase-change materials Thin Solid Films, 659, 1-6. https://doi.org/10.1016/j.tsf.2018.05.034
Kim, J. H. ; Byeon, D. S. ; Ko, Dae Hong ; Park, J. H. / Physical and electrical characteristics of Ge x Sb 100−x films for use as phase-change materials In: Thin Solid Films. 2018 ; Vol. 659. pp. 1-6.
@article{3afc4fc0c8d24d9c9ac2127b4a9fa550,
title = "Physical and electrical characteristics of Ge x Sb 100−x films for use as phase-change materials",
abstract = "In this study, we investigate a GeSb binary phase to be used as a high-speed phase-change material (PCM). In particular, by varying the Ge concentration from 10 at.{\%} to 30 at.{\%}, we study the effects of the PCM composition on the physical and electrical properties of sputtered Ge x Sb 100−x films. The Ge 10 Sb 90 film assumes a crystal trigonal structure (Sb phase); however, phase separation occurs in the films at higher Ge concentrations (i.e., the Sb phase coexists with the crystalline Ge phase). As the Ge concentration increases, the grain size decreases, and the sheet resistances of both the amorphous and crystalline states increase. An increase in the Ge concentration in these GeSb films results in an increase in the crystallization temperature, activation energy, data retention, and band gap. The current–voltage measurements show that the threshold and RESET currents decrease with increasing Ge concentrations. In addition, we discuss the R–V curve, crystallization speed, and programming window. The results indicate that GeSb films possess favorable physical and electrical characteristics and can be used as PCMs in phase-change memory applications.",
author = "Kim, {J. H.} and Byeon, {D. S.} and Ko, {Dae Hong} and Park, {J. H.}",
doi = "10.1016/j.tsf.2018.05.034",
journal = "Thin Solid Films",
Kim, JH, Byeon, DS, Ko, DH & Park, JH 2018, ' Physical and electrical characteristics of Ge x Sb 100−x films for use as phase-change materials ', Thin Solid Films, vol. 659, pp. 1-6. https://doi.org/10.1016/j.tsf.2018.05.034
Physical and electrical characteristics of Ge x Sb 100−x films for use as phase-change materials . / Kim, J. H.; Byeon, D. S.; Ko, Dae Hong; Park, J. H.
In: Thin Solid Films, Vol. 659, 01.08.2018, p. 1-6.
T1 - Physical and electrical characteristics of Ge x Sb 100−x films for use as phase-change materials
AU - Byeon, D. S.
AU - Ko, Dae Hong
AU - Park, J. H.
N2 - In this study, we investigate a GeSb binary phase to be used as a high-speed phase-change material (PCM). In particular, by varying the Ge concentration from 10 at.% to 30 at.%, we study the effects of the PCM composition on the physical and electrical properties of sputtered Ge x Sb 100−x films. The Ge 10 Sb 90 film assumes a crystal trigonal structure (Sb phase); however, phase separation occurs in the films at higher Ge concentrations (i.e., the Sb phase coexists with the crystalline Ge phase). As the Ge concentration increases, the grain size decreases, and the sheet resistances of both the amorphous and crystalline states increase. An increase in the Ge concentration in these GeSb films results in an increase in the crystallization temperature, activation energy, data retention, and band gap. The current–voltage measurements show that the threshold and RESET currents decrease with increasing Ge concentrations. In addition, we discuss the R–V curve, crystallization speed, and programming window. The results indicate that GeSb films possess favorable physical and electrical characteristics and can be used as PCMs in phase-change memory applications.
AB - In this study, we investigate a GeSb binary phase to be used as a high-speed phase-change material (PCM). In particular, by varying the Ge concentration from 10 at.% to 30 at.%, we study the effects of the PCM composition on the physical and electrical properties of sputtered Ge x Sb 100−x films. The Ge 10 Sb 90 film assumes a crystal trigonal structure (Sb phase); however, phase separation occurs in the films at higher Ge concentrations (i.e., the Sb phase coexists with the crystalline Ge phase). As the Ge concentration increases, the grain size decreases, and the sheet resistances of both the amorphous and crystalline states increase. An increase in the Ge concentration in these GeSb films results in an increase in the crystallization temperature, activation energy, data retention, and band gap. The current–voltage measurements show that the threshold and RESET currents decrease with increasing Ge concentrations. In addition, we discuss the R–V curve, crystallization speed, and programming window. The results indicate that GeSb films possess favorable physical and electrical characteristics and can be used as PCMs in phase-change memory applications.
U2 - 10.1016/j.tsf.2018.05.034
DO - 10.1016/j.tsf.2018.05.034
JO - Thin Solid Films
JF - Thin Solid Films
Kim JH, Byeon DS, Ko DH, Park JH. Physical and electrical characteristics of Ge x Sb 100−x films for use as phase-change materials Thin Solid Films. 2018 Aug 1;659:1-6. https://doi.org/10.1016/j.tsf.2018.05.034
10.1016/j.tsf.2018.05.034