Electronic structure and bonding configuration of the H-phases Ti2MC and Ti2MN (M = Al, Ga, In)
A. L. Ivanovskii, R. F. Sabiryanov, A. N. Skazkin, V. M. Zhukovskii, G. P. Shveikin
The electronic structure of the H-phases Ti2MC and Ti2MN (M = Al, Ga, In) is calculated by the self-consistent linearized muffin-tin-orbital method in the atomic-sphere approximation and the MO LCAO method using RMH parametrization. The band structure and bonding configuration of the H-phases are compared with those of other Ti-M-C and Ti-M-N phases.
10.1007/BF02758375
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Electronic structure Chemical Compounds
Tin Chemical Compounds
Band structure Chemical Compounds
Ivanovskii, A. L., Sabiryanov, R. F., Skazkin, A. N., Zhukovskii, V. M., & Shveikin, G. P. (2000). Electronic structure and bonding configuration of the H-phases Ti2MC and Ti2MN (M = Al, Ga, In). Inorganic Materials, 36(1), 28-31. https://doi.org/10.1007/BF02758375
Electronic structure and bonding configuration of the H-phases Ti2MC and Ti2MN (M = Al, Ga, In). / Ivanovskii, A. L.; Sabiryanov, R. F.; Skazkin, A. N.; Zhukovskii, V. M.; Shveikin, G. P.
In: Inorganic Materials, Vol. 36, No. 1, 2000, p. 28-31.
Ivanovskii, AL, Sabiryanov, RF, Skazkin, AN, Zhukovskii, VM & Shveikin, GP 2000, 'Electronic structure and bonding configuration of the H-phases Ti2MC and Ti2MN (M = Al, Ga, In)', Inorganic Materials, vol. 36, no. 1, pp. 28-31. https://doi.org/10.1007/BF02758375
Ivanovskii AL, Sabiryanov RF, Skazkin AN, Zhukovskii VM, Shveikin GP. Electronic structure and bonding configuration of the H-phases Ti2MC and Ti2MN (M = Al, Ga, In). Inorganic Materials. 2000;36(1):28-31. https://doi.org/10.1007/BF02758375
Ivanovskii, A. L. ; Sabiryanov, R. F. ; Skazkin, A. N. ; Zhukovskii, V. M. ; Shveikin, G. P. / Electronic structure and bonding configuration of the H-phases Ti2MC and Ti2MN (M = Al, Ga, In). In: Inorganic Materials. 2000 ; Vol. 36, No. 1. pp. 28-31.
@article{b3c28209b5004f5da5435791fc02fbe5,
title = "Electronic structure and bonding configuration of the H-phases Ti2MC and Ti2MN (M = Al, Ga, In)",
abstract = "The electronic structure of the H-phases Ti2MC and Ti2MN (M = Al, Ga, In) is calculated by the self-consistent linearized muffin-tin-orbital method in the atomic-sphere approximation and the MO LCAO method using RMH parametrization. The band structure and bonding configuration of the H-phases are compared with those of other Ti-M-C and Ti-M-N phases.",
author = "Ivanovskii, {A. L.} and Sabiryanov, {R. F.} and Skazkin, {A. N.} and Zhukovskii, {V. M.} and Shveikin, {G. P.}",
doi = "10.1007/BF02758375",
journal = "Inorganic Materials",
publisher = "Maik Nauka-Interperiodica Publishing",
T1 - Electronic structure and bonding configuration of the H-phases Ti2MC and Ti2MN (M = Al, Ga, In)
AU - Ivanovskii, A. L.
AU - Sabiryanov, R. F.
AU - Skazkin, A. N.
AU - Zhukovskii, V. M.
AU - Shveikin, G. P.
N2 - The electronic structure of the H-phases Ti2MC and Ti2MN (M = Al, Ga, In) is calculated by the self-consistent linearized muffin-tin-orbital method in the atomic-sphere approximation and the MO LCAO method using RMH parametrization. The band structure and bonding configuration of the H-phases are compared with those of other Ti-M-C and Ti-M-N phases.
AB - The electronic structure of the H-phases Ti2MC and Ti2MN (M = Al, Ga, In) is calculated by the self-consistent linearized muffin-tin-orbital method in the atomic-sphere approximation and the MO LCAO method using RMH parametrization. The band structure and bonding configuration of the H-phases are compared with those of other Ti-M-C and Ti-M-N phases.
U2 - 10.1007/BF02758375
DO - 10.1007/BF02758375
JO - Inorganic Materials
JF - Inorganic Materials