Electro-Physical Properties of Ge-doped Cd1-xMnxTe (x < 0.1) Crystals
S. Solodin Yuriy Fedkovych Chernivtsi National University
Ye. Nikoniuk National University of Water Management and Nature Resources
G. Rarenko Yuriy Fedkovich' Chernivtsi National University
P. Fochuk Yuriy Fedkovich' Chernivtsi National University, Chernivtsi
Keywords: Cd1-xMnxTe,, solid solutions, electrical properties, Hall effect, Germanium
Ge-doped Cd1-xMnxTe (x = 0.02, 0.04, 0.08) crystals were grown by the Bridgman method. Carried out electrical measurements in the temperature range 280 – 420 K have found that the crystals' hole conductivity is controlled by the deep compensated acceptors, whose ionization energy (εA) was increased with the content Mn (x) according to the relation εA = 0.6 (1 + 2х) eV. At 300 K: ρ = (108-109) (Ohm´cm), RH = (5×109-5×1010) cm3/C; mobility of current carriers ~ 50 cm2 /(V´s).
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SolodinS., Nikoniuk Y., RarenkoG., & FochukP. (2019). Electro-Physical Properties of Ge-doped Cd1-xMnxTe (x &lt; 0.1) Crystals . Physics and Chemistry of Solid State, 20(2), 144-148. https://doi.org/10.15330/pcss.20.2.144-148