Volume 263: symposium f – mechanisms of heteroepitaxial grow...
Van Der Waals Epitaxy of GaSe o...
Lang, O. Schlaf, R. Tomm, Y. Pettenkofer, C. and Jaegermann, W. 1994. Single crystalline GaSe/WSe2heterointerfaces grown by van der Waals epitaxy. I. Growth conditions. Journal of Applied Physics, Vol. 75, Issue. 12, p. 7805.
Löher, T. Tomm, Y. Klein, A. Su, D. Pettenkofer, C. and Jaegermann, W. 1996. Highly oriented layers of the three‐dimensional semiconductor CdTe on the two‐dimensional layered semiconductors MoTe2and WSe2. Journal of Applied Physics, Vol. 80, Issue. 10, p. 5718.
Löher, T Ueno, K and Koma, A 1998. Van der Waals type buffer layers: epitaxial growth of the large lattice mismatch system CdS/InSe/H–Si(111). Applied Surface Science, Vol. 130-132, Issue. , p. 334.
Schlaf, R. Lang, O. Pettenkofer, C. and Jaegermann, W. 1999. Band lineup of layered semiconductor heterointerfaces prepared by van der Waals epitaxy: Charge transfer correction term for the electron affinity rule. Journal of Applied Physics, Vol. 85, Issue. 5, p. 2732.
Volume 263 (Symposium F – Mechanisms of Heteroepitaxial Growth)
1992 , 291
Van Der Waals Epitaxy of GaSe on WSe2
O. Lang (a1), R. Schlaf (a1), Y. Tomm (a1), C. Pettenkofer (a1) and W. Jaegermann (a1)...
Hahn-Meitner-Institut, Abteilung Solare Energetik, Glienicker Str. 100, 1000 Berlin 39, Germany
DOI: https://doi.org/10.1557/PROC-263-291
GaSe layers were grown on the van der Waals (0001) planes of WSe2 (van der Waals epitaxy). The substrate (0001) plane was cleaned in UHV by heating to 400°C. GaSe was deposited from resistively heated Knudsen cells at T=300° C. After annealing at 450°C an epitaxial GaSe overlayer is formed as evidenced by X-ray diffraction, scanning tunneling microscopy, low energy electron diffraction and photoelectron spectroscopy.
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