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A light-stimulated synaptic transistor with synaptic plasticity and memory functions based on InGaZnOx–Al2O3 thin film structure
dc.contributor.author Li, Hua Kai
dc.contributor.author Chen, Tupei
dc.contributor.author Liu, P.
dc.contributor.author Hu, S. G.
dc.contributor.author Liu, Y.
dc.contributor.author Zhang, Qing
dc.contributor.author Lee, Pooi See
dc.identifier.citation Li, H. K., Chen, T., Liu, P., Hu, S. G., Liu, Y., Zhang, Q., et al. (2016). A light-stimulated synaptic transistor with synaptic plasticity and memory functions based on InGaZnOx–Al2O3 thin film structure. Journal of Applied Physics, 119(24), 244505-. en_US
dc.identifier.issn 0021-8979 en_US
dc.description.abstract In this work, a synaptic transistor based on the indium gallium zinc oxide (IGZO)–aluminum oxide (Al2O3) thin film structure, which uses ultraviolet (UV) light pulses as the pre-synaptic stimulus, has been demonstrated. The synaptic transistor exhibits the behavior of synaptic plasticity like the paired-pulse facilitation. In addition, it also shows the brain's memory behaviors including the transition from short-term memory to long-term memory and the Ebbinghaus forgetting curve. The synapse-like behavior and memory behaviors of the transistor are due to the trapping and detrapping processes of the holes, which are generated by the UV pulses, at the IGZO/Al2O3 interface and/or in the Al2O3 layer. en_US
dc.description.sponsorship NRF (Natl Research Foundation, S'pore) en_US
dc.description.sponsorship ASTAR (Agency for Sci., Tech. and Research, S'pore) en_US
dc.description.sponsorship MOE (Min. of Education, S'pore) en_US
dc.format.extent 5 p. en_US
dc.relation.ispartofseries Journal of Applied Physics en_US
dc.rights © 2016 American Institute of Physics (AIP). This paper was published in Journal of Applied Physics and is made available as an electronic reprint (preprint) with permission of American Institute of Physics (AIP). The published version is available at: [http://dx.doi.org/10.1063/1.4955042]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. en_US
dc.subject Ultraviolet light en_US
dc.subject Synapses en_US
dc.title A light-stimulated synaptic transistor with synaptic plasticity and memory functions based on InGaZnOx–Al2O3 thin film structure en_US
dc.contributor.school School of Electrical and Electronic Engineering en_US
dc.contributor.school School of Materials Science and Engineering en_US
dc.identifier.doi http://dx.doi.org/10.1063/1.4955042
dc.description.version Published version en_US
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