Unstable resonator cavity semiconductor lasers
Salzman, J. and Venkatesan, T. and Lang, R. and Mittelstein, M. and Yariv, A. (1985) Unstable resonator cavity semiconductor lasers. Applied Physics Letters, 46 (3). pp. 218-220. ISSN 0003-6951. http://resolver.caltech.edu/CaltechAUTHORS:SALapl85a
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GaAs heterostructure lasers with unstable resonator cavities were demonstrated for the first time with both curved mirrors fabricated by etching. Typical output powers of 0.35 W were observed in a stable, highly coherent lateral mode. The laser operated stably in a single longitudinal mode over a large range of injection currents. The external quantum efficiency was 70% of that of a similar laser with both mirror facets cleaved implying good output coupling of the energy from the entire region.
© 1985 American Institute of Physics. Received 12 October 1984; accepted 5 November 1984. This research was supported by grants from the Air Force Office of Scientific Research and the Office of Naval Research. J.S., R.L., and M.M. would like to acknowledge the support of the Bantrell post-doctoral fellowship, the National Science Foundation, and the German National Scholarship Foundation, respectively. Erratum: Unstable resonator cavity semiconductor lasers [Appl. Phys. Lett. 46, 218 (1985)]. Appl. Phys. Lett. 48, 198 (1986)
LASER CAVITIES; SEMICONDUCTOR LASERS; POWER; STABILITY; OPERATION; QUANTUM EFFICIENCY; GALLIUM ARSENIDES; HETEROJUNCTIONS; LASER MIRRORS; FABRICATION; ETCHING; EXPERIMENTAL DATA
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http://dx.doi.org/10.1063/1.95688
Tony Diaz