Engineering the Optoelectronic Properties of 2D Hexagonal Boron Nitride Monolayer Films by Sulfur Substitutional Doping
Tan, Biying, Wu, You, Gao, Feng, Yang, Huihui, Hu, Yunxia, Shang, Huiming, Zhang, Xin, Zhang, Jia, Li, Zhonghua, Fu, Yong Qing, Jia, Dechang, Zhou, Yu, Xiao, Haiying and Hu, PingAn (2022) Engineering the Optoelectronic Properties of 2D Hexagonal Boron Nitride Monolayer Films by Sulfur Substitutional Doping. ACS Applied Materials & Interfaces, 14 (14). pp. 16453-16461. ISSN 1944-8244
Final revised manuscript file ACS AMI.pdf - Accepted Version
Restricted to Repository staff only until 4 April 2023.
Official URL: https://doi.org/10.1021/acsami.2c01834
Tuning the optical and electrical properties of two-dimensional (2D) hexagonal boron nitride (hBN) is critical for its successful application in optoelectronics. Herein, we report a new methodology to significantly enhance the optoelectronic properties of hBN monolayers by substitutionally doping with sulfur (S) on a molten Au substrate using chemical vapor deposition. The S atoms are more geometrically and energetically favorable to be doped in the N sites than in the B sites of hBN, and the S 3p orbitals hybridize with the B 2p orbitals, forming a new conduction band edge that narrows its band gap. The band edge positions change with the doping concentration of S atoms. The conductivity increases up to 1.5 times and enhances the optoelectronic properties, compared to pristine hBN. A photodetector made of a 2D S-doped hBN film shows an extended wavelength response from 260 to 280 nm and a 50 times increase in its photocurrent and responsivity with light illumination at 280 nm. These enhancements are mainly due to the improved light absorption and increased electrical conductivity through doping with sulfur. This S-doped hBN monolayer film can be used in the next-generation electronics, optoelectronics, and spintronics.
Funding information: Here, we thank Dr Qing Du of Harbin Institute of Technology for the TEM characterization. This work was supported by the National Basic Research Program of China (2019YFB1310200), the Foundation for Innovative Research Groups of the National Natural Science Foundation of China (NSFC no. 51521003), the Self-Planned Task of State Key Laboratory of Robotics and System (HIT) (no.SKLRS201607B), the International Exchange Grant (IEC/NSFC/201078), and the Newton Mobility Grant (IE161019) through Royal Society UK and the NSFC.
2D monolayer films, chemical vapor deposition, deep UV photodetectors, hexagonal boron nitride, optoelectronic properties, sulfur substitutional doping
F100 Chemistry
H800 Chemical, Process and Energy Engineering
Elena Carlaw