Characterization of metal-overlayer growth-modes in Auger crystal surface analysis
Jens E.T. Andersen, Preben J. Møller
A general procedure for Auger-analysis characterization of the modes of growth during deposition of metal thin films onto layer-structured crystalline substrates is presented. It takes into account the crystallographic electron attenuation in both the overlayer structures and in the substrate layers, and it is found that the maximum Auger electronic escape-depth has a minimum at monolayer coverage. The model, which is based on ratios between electronic attenuation lengths, or between electronic inelastic mean free paths, is tested on thin-film growth of yttrium on MgO(100) and of yttrium and copper, respectively, on LaAlO3(100); its predictions on the modes of growth are confirmed, and it is further indicated that the degree of charge distribution and the change in bond lengths in the interface region may decrease with yttrium coverage.
https://doi.org/10.1016/0039-6028(91)90919-J
10.1016/0039-6028(91)90919-J
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Yttrium Engineering & Materials Science 100%
Surface analysis Engineering & Materials Science 88%
yttrium Physics & Astronomy 74%
crystal surfaces Physics & Astronomy 73%
Surface Analysis Chemical Compounds 72%
Crystals Engineering & Materials Science 68%
Characterization (materials science) Engineering & Materials Science 60%
Metals Engineering & Materials Science 44%
Andersen, J. E. T., & Møller, P. J. (1991). Characterization of metal-overlayer growth-modes in Auger crystal surface analysis. Surface Science, 258(1-3), 247-258. https://doi.org/10.1016/0039-6028(91)90919-J
Andersen, Jens E.T. ; Møller, Preben J. / Characterization of metal-overlayer growth-modes in Auger crystal surface analysis. In: Surface Science. 1991 ; Vol. 258, No. 1-3. pp. 247-258.
@article{400a00fe770b40a98ea6b62669d66b7b,
title = "Characterization of metal-overlayer growth-modes in Auger crystal surface analysis",
abstract = "A general procedure for Auger-analysis characterization of the modes of growth during deposition of metal thin films onto layer-structured crystalline substrates is presented. It takes into account the crystallographic electron attenuation in both the overlayer structures and in the substrate layers, and it is found that the maximum Auger electronic escape-depth has a minimum at monolayer coverage. The model, which is based on ratios between electronic attenuation lengths, or between electronic inelastic mean free paths, is tested on thin-film growth of yttrium on MgO(100) and of yttrium and copper, respectively, on LaAlO3(100); its predictions on the modes of growth are confirmed, and it is further indicated that the degree of charge distribution and the change in bond lengths in the interface region may decrease with yttrium coverage.",
author = "Andersen, {Jens E.T.} and M{\o}ller, {Preben J.}",
doi = "10.1016/0039-6028(91)90919-J",
journal = "Surface Science",
Andersen, JET & Møller, PJ 1991, 'Characterization of metal-overlayer growth-modes in Auger crystal surface analysis', Surface Science, vol. 258, no. 1-3, pp. 247-258. https://doi.org/10.1016/0039-6028(91)90919-J
Characterization of metal-overlayer growth-modes in Auger crystal surface analysis. / Andersen, Jens E.T.; Møller, Preben J.
In: Surface Science, Vol. 258, No. 1-3, 02.11.1991, p. 247-258.
T1 - Characterization of metal-overlayer growth-modes in Auger crystal surface analysis
AU - Andersen, Jens E.T.
AU - Møller, Preben J.
N2 - A general procedure for Auger-analysis characterization of the modes of growth during deposition of metal thin films onto layer-structured crystalline substrates is presented. It takes into account the crystallographic electron attenuation in both the overlayer structures and in the substrate layers, and it is found that the maximum Auger electronic escape-depth has a minimum at monolayer coverage. The model, which is based on ratios between electronic attenuation lengths, or between electronic inelastic mean free paths, is tested on thin-film growth of yttrium on MgO(100) and of yttrium and copper, respectively, on LaAlO3(100); its predictions on the modes of growth are confirmed, and it is further indicated that the degree of charge distribution and the change in bond lengths in the interface region may decrease with yttrium coverage.
AB - A general procedure for Auger-analysis characterization of the modes of growth during deposition of metal thin films onto layer-structured crystalline substrates is presented. It takes into account the crystallographic electron attenuation in both the overlayer structures and in the substrate layers, and it is found that the maximum Auger electronic escape-depth has a minimum at monolayer coverage. The model, which is based on ratios between electronic attenuation lengths, or between electronic inelastic mean free paths, is tested on thin-film growth of yttrium on MgO(100) and of yttrium and copper, respectively, on LaAlO3(100); its predictions on the modes of growth are confirmed, and it is further indicated that the degree of charge distribution and the change in bond lengths in the interface region may decrease with yttrium coverage.
U2 - 10.1016/0039-6028(91)90919-J
DO - 10.1016/0039-6028(91)90919-J
JO - Surface Science
JF - Surface Science
Andersen JET, Møller PJ. Characterization of metal-overlayer growth-modes in Auger crystal surface analysis. Surface Science. 1991 Nov 2;258(1-3):247-258. doi: 10.1016/0039-6028(91)90919-J