Volume 26 Issue 17: Focus Issue: Nanowires: Fundam...
Phase transformation in self-assembled Gd silicide...
Phase transformation in self-assembled Gd silicide nanostructures on Si(001)
Published online by Cambridge University Press: 30 June 2011
Gangfeng Ye ,
Martin A. Crimp and
Jun Nogami
Gangfeng Ye
Department of Chemical Engineering and Materials Science, Michigan State University, East Lansing, Michigan, 48824-1226
Martin A. Crimp
Department of Materials Science and Engineering, University of Toronto, Toronto, Ontario, Canada M5S 3E4
jun.nogami@utoronto.ca
Gd silicide nanostructures epitaxially grown on Si(001) are studied by plan-view transmission electron microscopy and associated nanobeam electron diffraction, as well as scanning tunneling microscopy. The nanobeam diffraction measurements show a direct correlation between the nanostructure morphology, either nanowires or islands, and the silicide crystal structure. Scanning tunneling microscopy shows a phase transformation from nanowires to islands that nucleate at nanowire intersections. A specific mechanism for this transformation is proposed that explains nanowire growth behavior previously observed on vicinal Si surfaces.
Phase transformation Scanning tunneling microscopy Scanning transmission electron microscopy
Journal of Materials Research , Volume 26 , Issue 17: Focus Issue: Nanowires: Fundamentals and Applications , 14 September 2011 , pp. 2276 - 2281
DOI: https://doi.org/10.1557/jmr.2011.176[Opens in a new window]
Present address: Nanolab Technologies, San Jose, California 95134
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DOI: https://doi.org/10.1557/jmr.2011.176