Optimization of poly(vinylidene fluoride-trifluoroethylene) films as non-volatile memory for flexible electronics
Duo Mao, Manuel Angel Quevedo Quevedo-López, Harvey J. Stiegler, Bruce E. Gnade, Husam N. Alshareef
The impact of thermal treatment and thickness on the polarization and leakage current of poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] copolymer thin film capacitors has been studied. The evolution of the film morphology, crystallinity and bonding orientation as a function of annealing temperature and thickness were characterized using multiple techniques. Electrical performance of the devices was correlated with the material properties. It was found that annealing at or slightly above the Curie temperature (Tc) is the optimal temperature for high polarization, smooth surface morphology and low leakage current. Higher annealing temperature (but below the melting temperature Tm) favors larger size β crystallites through molecular chain self-organization, resulting in increased film roughness, and the vertical polarization tends to saturate. Metal-Ferroelectric-Metal (MFM) capacitors consistently achieved Ps, Pr and Vc of 8.5 μC/cm2, 7.4 μC/cm2 and 10.2 V, respectively.
https://doi.org/10.1016/j.orgel.2010.02.012
10.1016/j.orgel.2010.02.012
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trifluoroethene Chemical Compounds 100%
polyvinylidene fluoride Chemical Compounds 74%
Flexible electronics Chemical Compounds 67%
vinylidene Physics & Astronomy 53%
Annealing Chemical Compounds 47%
fluorides Physics & Astronomy 46%
Polarization Chemical Compounds 43%
vinylidene fluoride-trifluoroethylene copolymer Chemical Compounds 36%
Mao, D., Quevedo-López, M. A. Q., Stiegler, H. J., Gnade, B. E., & Alshareef, H. N. (2010). Optimization of poly(vinylidene fluoride-trifluoroethylene) films as non-volatile memory for flexible electronics. Organic Electronics, 11(5), 925-932. https://doi.org/10.1016/j.orgel.2010.02.012
Mao, Duo ; Quevedo-López, Manuel Angel Quevedo ; Stiegler, Harvey J. ; Gnade, Bruce E. ; Alshareef, Husam N. / Optimization of poly(vinylidene fluoride-trifluoroethylene) films as non-volatile memory for flexible electronics. In: Organic Electronics. 2010 ; Vol. 11, No. 5. pp. 925-932.
@article{9c3bbdd4082b496bab150c47e60b5d52,
title = "Optimization of poly(vinylidene fluoride-trifluoroethylene) films as non-volatile memory for flexible electronics",
abstract = "The impact of thermal treatment and thickness on the polarization and leakage current of poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] copolymer thin film capacitors has been studied. The evolution of the film morphology, crystallinity and bonding orientation as a function of annealing temperature and thickness were characterized using multiple techniques. Electrical performance of the devices was correlated with the material properties. It was found that annealing at or slightly above the Curie temperature (Tc) is the optimal temperature for high polarization, smooth surface morphology and low leakage current. Higher annealing temperature (but below the melting temperature Tm) favors larger size β crystallites through molecular chain self-organization, resulting in increased film roughness, and the vertical polarization tends to saturate. Metal-Ferroelectric-Metal (MFM) capacitors consistently achieved Ps, Pr and Vc of 8.5 μC/cm2, 7.4 μC/cm2 and 10.2 V, respectively.",
author = "Duo Mao and Quevedo-L{\'o}pez, {Manuel Angel Quevedo} and Stiegler, {Harvey J.} and Gnade, {Bruce E.} and Alshareef, {Husam N.}",
note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: The authors thank the Army Research Laboratory (ARL) for partial financial support of this project. We would also like to thank Dr. Eric Forsythe of ARL for very helpful discussions regarding non-volatile memory integration.",
doi = "10.1016/j.orgel.2010.02.012",
journal = "Organic Electronics",
Mao, D, Quevedo-López, MAQ, Stiegler, HJ, Gnade, BE & Alshareef, HN 2010, 'Optimization of poly(vinylidene fluoride-trifluoroethylene) films as non-volatile memory for flexible electronics', Organic Electronics, vol. 11, no. 5, pp. 925-932. https://doi.org/10.1016/j.orgel.2010.02.012
Optimization of poly(vinylidene fluoride-trifluoroethylene) films as non-volatile memory for flexible electronics. / Mao, Duo; Quevedo-López, Manuel Angel Quevedo; Stiegler, Harvey J.; Gnade, Bruce E.; Alshareef, Husam N.
In: Organic Electronics, Vol. 11, No. 5, 05.2010, p. 925-932.
T1 - Optimization of poly(vinylidene fluoride-trifluoroethylene) films as non-volatile memory for flexible electronics
AU - Mao, Duo
AU - Quevedo-López, Manuel Angel Quevedo
AU - Stiegler, Harvey J.
AU - Gnade, Bruce E.
AU - Alshareef, Husam N.
N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: The authors thank the Army Research Laboratory (ARL) for partial financial support of this project. We would also like to thank Dr. Eric Forsythe of ARL for very helpful discussions regarding non-volatile memory integration.
N2 - The impact of thermal treatment and thickness on the polarization and leakage current of poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] copolymer thin film capacitors has been studied. The evolution of the film morphology, crystallinity and bonding orientation as a function of annealing temperature and thickness were characterized using multiple techniques. Electrical performance of the devices was correlated with the material properties. It was found that annealing at or slightly above the Curie temperature (Tc) is the optimal temperature for high polarization, smooth surface morphology and low leakage current. Higher annealing temperature (but below the melting temperature Tm) favors larger size β crystallites through molecular chain self-organization, resulting in increased film roughness, and the vertical polarization tends to saturate. Metal-Ferroelectric-Metal (MFM) capacitors consistently achieved Ps, Pr and Vc of 8.5 μC/cm2, 7.4 μC/cm2 and 10.2 V, respectively.
AB - The impact of thermal treatment and thickness on the polarization and leakage current of poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] copolymer thin film capacitors has been studied. The evolution of the film morphology, crystallinity and bonding orientation as a function of annealing temperature and thickness were characterized using multiple techniques. Electrical performance of the devices was correlated with the material properties. It was found that annealing at or slightly above the Curie temperature (Tc) is the optimal temperature for high polarization, smooth surface morphology and low leakage current. Higher annealing temperature (but below the melting temperature Tm) favors larger size β crystallites through molecular chain self-organization, resulting in increased film roughness, and the vertical polarization tends to saturate. Metal-Ferroelectric-Metal (MFM) capacitors consistently achieved Ps, Pr and Vc of 8.5 μC/cm2, 7.4 μC/cm2 and 10.2 V, respectively.
UR - https://linkinghub.elsevier.com/retrieve/pii/S1566119910000650
U2 - 10.1016/j.orgel.2010.02.012
DO - 10.1016/j.orgel.2010.02.012
JO - Organic Electronics
JF - Organic Electronics
Mao D, Quevedo-López MAQ, Stiegler HJ, Gnade BE, Alshareef HN. Optimization of poly(vinylidene fluoride-trifluoroethylene) films as non-volatile memory for flexible electronics. Organic Electronics. 2010 May;11(5):925-932. https://doi.org/10.1016/j.orgel.2010.02.012