JP4425707B2 - Semiconductor device and manufacturing method thereof - Google Patents
Semiconductor device and manufacturing method thereof Download PDF
metal layer
semiconductor device
via hole
達朗 手塚
俊哉 林
Necエレクトロニクス株式会社
2004-05-25 Application filed by Necエレクトロニクス株式会社 filed Critical Necエレクトロニクス株式会社
H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
H01L21/76805—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics the opening being a via or contact hole penetrating the underlying conductor
H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
H01L21/76841—Barrier, adhesion or liner layers
H01L21/7685—Barrier, adhesion or liner layers the layer covering a conductive structure
H01L21/76804—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics by forming tapered via holes
The present invention relates to a semiconductor device having a via for electrically connecting a lower metal layer to another conductor and a manufacturing method thereof.
In a semiconductor device, a via is used to connect a wiring such as aluminum to an electrode of an element provided in another layer. Such a via is formed by embedding a conductive material in the via hole.
However, conventionally, when such a via is formed, there is a problem that the contact resistance between the wiring and the via increases. In Patent Document 1, in order to solve such a problem, before burying a metal such as W in the via hole, a reducing gas is flowed to remove a substance causing high resistance, and thereafter Discloses a technique for performing a process of embedding a metal material.
An object of the present invention is to provide a semiconductor device in which the via resistance of a via for electrically connecting a lower metal layer to another conductor is reduced, and a manufacturing method thereof.
According to the present invention,
A substrate,
A metal layer formed on the substrate;
An insulating film formed on the metal layer;
In the insulating film, provided in connection with the metal layer, a first via that electrically connects the metal layer with another conductor;
In the insulating film, provided in connection with the metal layer, a second via having a larger via diameter than the first via,
The metal layer is in a floating state when forming a first via hole and a second via hole for forming the first via and the second via, respectively, in the insulating film,
There is provided a semiconductor device characterized in that the material constituting the metal layer is altered at the bottom of the second via.
The reason why the contact resistance between the lower layer wiring and the via increases as described above is that the lower layer wiring is charged when the lower layer wiring is connected to a large capacity or is floating, for example, 100 μm 2 or more. It is considered that the charge accumulated in the wiring reacts with the etching gas and the barrier metal material to cause alteration when forming the via hole reaching the thickness of. According to the present invention, the contact resistance between the lower metal layer and the via is formed by forming a via hole of the via that connects the metal layer and another conductor after removing the charge of the metal layer such as the wiring. Can be prevented from rising.
In the present invention, the metal layer can be a wiring or an electrode. Here, the first via is used to electrically connect the lower metal layer to another conductor. The second via is formed in parallel with the via hole when the via hole for the first via is formed in the insulating film, and the lower metal layer is exposed faster than the via hole to charge the metal layer. The opening formed for the purpose of removing is embedded with a conductive material. The second via is provided in parallel with the first via.
The semiconductor device can also include a plurality of first vias. In this case, the plurality of first vias have substantially the same via diameter. The semiconductor device can also include a plurality of second vias.
The insulating film can be composed of an oxide film, a nitride film, an organic material film, or the like used as a general interlayer insulating film.
FIG. 6 is a diagram showing the relationship between the size of the via hole and the etching rate of the insulating film when the via hole is formed. FIG. 6A shows the relationship between the via area and the etching rate, and FIG. 6B shows the relationship between the via diameter and the etching rate. Here, a silicon oxide film is used as the insulating film, and C 4 F 8 is used as the etching gas.
As shown in FIG. 6, the etching rate increases as the via area or via diameter increases. That is, it was shown that the via hole can be sharpened faster as the via area or via diameter is larger. The inventors of the present invention have come up with the present invention by paying attention to such a phenomenon when forming a via hole.
According to the present invention, the first via and the second via having a larger via diameter, that is, an area than the first via are formed on the metal layer. As described above, when forming a via hole for embedding a via, the via hole is formed faster when the area of the via hole is larger. Therefore, when forming the via hole for the first via and the second via hole for the second via as in the semiconductor device of the present invention, the second via hole can be shaved quickly. The metal layer is exposed. Therefore, in the present invention, even when the metal layer is charged, the reaction between the metal layer and the etching gas occurs at the bottom of the second via hole, and the charge of the metal layer can be removed. Thereafter, when the metal layer is exposed at the bottom of the first via hole, since the metal layer is not charged, it is possible to prevent the metal layer from being altered at the bottom of the first via hole. Thereby, an increase in contact resistance between the first via and the lower metal layer can be suppressed.
In the semiconductor device of the present invention, the second via can be a dummy via that is not electrically connected to another conductor.
As described above, in the present invention, the second via is conductive in the opening (second via hole) formed for the purpose of forming the first via hole in a state where the charge of the lower metal layer is removed. The material is embedded. That is, the second via is not provided for the purpose of connecting the lower metal layer and the other conductor, and thus does not need to be electrically connected to the other conductor. However, this does not limit the arrangement position of the second via, and the second via may be electrically connected to another conductor. Here, the other conductor is, for example, an upper metal layer. In this case, since the electrical connection between the lower metal layer and the other conductor is made through the first via, even if the contact resistance between the second via and the lower metal layer is high, the metal layer Can be electrically connected to the other conductor.
In the semiconductor device of the present invention, the metal layer can include a wiring metal film and a barrier metal film formed on the wiring metal film, and the first via and the second via are formed on the barrier metal film. In addition , the barrier metal film may be altered at the bottom of the second via .
Here, the wiring metal film can be made of aluminum, copper, silver, or an alloy containing these. Further, the barrier metal film can include a titanium nitride film. For example, the metal layer can be configured such that a titanium nitride film is formed as a barrier metal film on an aluminum wiring. In such a case, alteration of the metal layer (titanium nitride film) as described above is likely to occur during the formation of the via hole. However, according to the present invention, since the metal layer is not charged when the first via hole is formed, the deterioration of the metal layer at the bottom of the first via hole can be suppressed. As a result, an increase in contact resistance between the metal layer and the first via can be prevented.
In the semiconductor device of the present invention, the metal layer can include aluminum, copper, silver, or polysilicon. The metal layer can be a wiring made of aluminum, copper, silver, or an alloy containing these, or can be an electrode made of polysilicon.
In the semiconductor device of the present invention, the first via and the second via can include tungsten. In addition, the via can be made of the same material as that of the metal layer.
Forming a metal layer on a semiconductor substrate;
Forming an insulating film on the metal layer;
A first via hole and a second via hole having a larger via hole diameter than the first via hole are formed in the insulating film by etching using a mask in which a predetermined pattern is formed, and an upper portion of the metal layer is exposed. A process of
In the step of exposing the upper portion of the metal layer, the metal layer is in a floating state when the first via hole and the second via hole are formed in the insulating film, and at the bottom of the second via hole. Etching is performed under the condition that the metal layer is exposed earlier than the first via hole, and the metal layer is exposed at the bottom first in the second via hole before the first via hole. A method for manufacturing a semiconductor device is provided.
Here, the first via hole is formed for the first via used for electrically connecting the lower metal layer to another conductor. By burying the first via hole with a conductive material, the first via is formed. The second via hole is formed in parallel with the via hole when the first via hole for the first via is formed in the insulating film, and exposes the lower metal layer faster than the via hole. Thus, the metal layer is formed for the purpose of removing the charge. By burying the second via hole with a conductive material, a second via is formed.
In the method for manufacturing a semiconductor device of the present invention, in the step of exposing the upper portion of the metal layer, etching can be performed using an etching gas containing halogen.
When a gas containing halogen such as fluorine is used as the etching gas, the above-described alteration is likely to occur during the formation of the via hole. However, according to the present invention, since the metal layer is not charged when the first via hole for the first via is formed, the deterioration of the metal layer at the bottom of the first via hole can be suppressed. As a result, an increase in contact resistance between the metal layer and the first via can be prevented.
Here, the first via hole is formed for the first via used for electrically connecting the lower metal layer to the conductor. The second via hole is formed in parallel with the via hole when the first via hole for the first via is formed in the insulating film, and exposes the lower metal layer faster than the via hole. The metal layer is formed for the purpose of removing the charge. Therefore, the diameter of the insulating film, the first via hole and the second via hole, and the etching conditions are such that the second via hole is removed faster than the first via hole, and at the bottom of the second via hole than the first via hole. The conditions are set as appropriate so that the metal layer is exposed first. As an example, as described above, by making the diameter of the second via hole larger than the diameter of the first via hole, the second via hole can be removed faster than the first via hole. The present invention is not limited to this, and the above phenomenon can be realized by changing other conditions. For example, when the second via hole is formed in an insulating film having a high etching rate with respect to the etching gas and the first via hole is formed in an insulating film having a low etching rate with respect to the etching gas, the second via hole is also formed. It can be removed faster than the first via hole.
According to the present invention, the via resistance of the via for electrically connecting the lower metal layer to another conductor can be reduced.
Next, embodiments of the present invention will be described in detail with reference to the drawings.
1 to 3 are process cross-sectional views showing the manufacturing process of the semiconductor device in the embodiment of the present invention.
First, a first barrier metal film 102 is formed on a SiOx layer (both not shown) formed on a semiconductor substrate. The first barrier metal film 102 can be composed of, for example, a Ti (titanium) film and a TiN (titanium nitride) film, or can be composed of only a TiN film. Subsequently, a wiring metal film 104 is formed on the first barrier metal film 102. The wiring metal film 104 can be made of a low resistance metal such as aluminum, copper, silver, or an alloy thereof. Next, a second barrier metal film 106 is formed on the wiring metal film 104. As with the first barrier metal film 102, the second barrier metal film 106 can be composed of, for example, a Ti film and a TiN film, or can be composed of only a TiN film. The first barrier metal film 102, the wiring metal film 104, and the second barrier metal film 106 can be formed by sputtering, for example. Thereafter, the first barrier metal film 102, the wiring metal film 104, and the second barrier metal film 106 are patterned into a predetermined shape. Thereby, the lower layer wiring 101 is formed. In the present embodiment, the lower layer wiring 101 is a large capacity wiring having an area of, for example, about 100 μm 2 .
Thereafter, an interlayer insulating film 108 is formed on the second barrier metal film 106. The interlayer insulating film 108 can be composed of a low dielectric constant film such as an oxide film, a nitride film, or an organic material film. Subsequently, a photoresist 110 provided with a first via opening 111 and a second via opening 112 is formed on the interlayer insulating film 108. Here, the second via opening 112 is formed to have a larger bottom area than the first via opening 111. Thereby, the semiconductor device having the configuration shown in FIG. 1A is obtained. In the present embodiment, the first via is formed for the purpose of electrically connecting the lower layer wiring 101 to an upper layer wiring described later. The second via is a dummy via that does not contribute to the connection between the lower layer wiring 101 and the upper layer wiring.
Subsequently, as shown in FIG. 1B, a first via hole 113 and a second via hole 114 are formed in the interlayer insulating film 108 by an etching process using an etching gas using the photoresist 110 as a mask. Here, as the etching gas, for example, C 4 F 8 , C 5 F 8 , CH 2 F 2 , CHF 3 , CF 4 , C 2 F 6 , C 3 F 8 , or the like, or SF 6 or NF 3 is used. An equi-F type can be used. Among these, C 4 F 8 , C 5 F 8 , CH 2 F 2 , and CHF 3 are particularly used.
At this time, as described above, the second via opening 112 is formed so as to have a bottom area larger than that of the first via opening 111. The via hole 114 is sharpened quickly. As a result, as shown in FIG. 1B, the second via hole 114 reaches the second barrier metal film 106 before the first via hole 113 reaches the second barrier metal film 106. Here, if the second barrier metal film 106 is charged, when the second barrier metal film 106 is exposed, the second barrier metal film 106 reacts with the etching gas to cause alteration. . In the present embodiment, since the second barrier metal film 106 is exposed in the second via hole 114 before the first via hole 113, the second barrier metal film 106 is charged when the second barrier metal film 106 is charged. At the bottom of the via hole 114, the second barrier metal film 106 is altered.
Further, the etching process is continued to expose the second barrier metal film 106 at the bottom of the first via hole 113 (FIG. 1C). In the present embodiment, even if the second barrier metal film 106 is charged before the etching process, the second via hole is exposed before the second barrier metal film 106 is exposed at the bottom of the first via hole 113. The second barrier metal film 106 is exposed at the bottom of 114 and reacts with the etching gas. Therefore, when the second barrier metal film 106 is exposed at the bottom of the first via hole 113, the second barrier metal film 106 is not charged. Thereby, it is possible to prevent the second barrier metal film 106 from being deteriorated at the bottom of the first via hole 113.
Subsequently, the photoresist 110 is removed by, for example, plasma ashing (FIG. 2D).
Thereafter, a part of the second barrier metal film 106 exposed at the bottoms of the first via hole 113 and the second via hole 114 is removed by, for example, an RF (high frequency) sputter etching process (FIG. 2E). Thereby, oxides such as TiO n (titanium oxide) can be removed.
Next, a conductive material is embedded in the first via hole 113 and the second via hole 114 to form the first via 115 and the second via 116, respectively (FIG. 2 (f)). The first via 115 and the second via 116 can be formed as follows, for example. First, a barrier metal (eg, a TiN film) is formed by sputtering in the first via hole 113 and the second via hole 114, and then the first via hole 113 and the second via are formed with a via material (eg, W: tungsten) by a CVD method. The via hole 114 is buried. Thereafter, CMP (Chemical mechanical polishing) is performed until the interlayer insulating film 108 is exposed, and the barrier metal and via material outside the first via hole 113 and the second via hole 114 are removed. Thereby, the first via 115 and the second via 116 are formed.
Thereafter, for example, as shown in FIG. 3, the upper layer wiring 117 composed of the third barrier metal film 118, the second wiring metal film 120, and the fourth barrier metal film 122 having a predetermined shape on the first via 115. Form. Thus, the semiconductor device 100 having a configuration in which the lower layer wiring 101 and the upper layer wiring 117 are connected via the first via 115 is obtained.
In the present embodiment, since the second via 116 is not provided for the purpose of connecting the lower layer wiring 101 and the upper layer wiring 117, it is not necessary to be electrically connected to the upper layer wiring 117. However, this does not limit the arrangement position of the second via 116, and the second via 116 may be provided at any position as long as it is electrically connected to the lower layer wiring 101. Good. For example, the upper wiring 117 can be formed so as to extend also on the second via 116.
According to the semiconductor device 100 in the present embodiment, when forming the first via provided for the purpose of connecting the lower layer wiring and the upper layer wiring, the second via serving as a dummy is formed at the same time. The contact resistance between the via and the lower layer wiring can be suppressed. Since the position of the second via is not particularly limited, an increase in contact resistance between the via and the lower layer wiring in the semiconductor device can be suppressed by a simple method without increasing the number of processing steps.
FIG. 4 is a top view showing a wiring pattern in this example. 4A is an overall view of the wiring pattern, and FIG. 4B is an enlarged view of a broken line portion 140 in FIG.
Here, the wiring pattern includes the lower layer metal 124 formed on the silicon wafer, the first terminal 126 formed on the lower layer metal 124, the upper layer second terminal 128, the upper layer third terminal 130, the upper layer fourth terminal 132, An upper layer first wiring 134 that connects the upper layer first terminal 126 and the upper layer third terminal 130, and an upper layer second wiring 136 that connects the upper layer second terminal 128 and the upper layer fourth terminal 132 are provided. The lower layer metal 124 was composed of aluminum and a barrier metal film (Ti film and TiN film). As shown in FIG. 4B, the upper layer second wiring 136 is connected to the lower layer metal 124 through the first via 115. Here, although not shown, the upper layer first terminal 126 is also connected to the lower layer metal 124 through a via having the same size as the first via 115. The lower metal 124 is also connected to the second via 116 having a larger cross-sectional area than the first via 115. Here, the second via 116 is not connected to the upper layer second wiring 136.
FIG. 5 shows the result of measuring the resistance between the upper layer first terminal 126 and the upper layer second terminal 128 when the area of the lower layer metal 124 is varied in the wiring pattern configured as described above. Here, the via diameter of the first via 115 is 0.28 μm, and the area of the dummy via 116 is 0.28 × 0.56 μm, 0.28 × 1.12 μm, 0.28 × 2.24 μm, 0.28. × 10 μm. Further, the resistance between the upper layer first terminal 126 and the upper layer second terminal 128 was similarly measured when the same wiring pattern as described above was formed without providing the second via 116.
As shown in FIG. 5, when the area of the lower layer metal 124 is small (15000 μm 2 or less), the resistance value between the upper layer first terminal 126 and the upper layer second terminal 128 may not have the second via 116. There was no difference. On the other hand, as the area of the lower layer metal 124 increases, the resistance value between the upper layer first terminal 126 and the upper layer second terminal 128 increases when the second via 116 does not exist. Further, it is shown that when the second via 116 is formed, the resistance value between the upper layer first terminal 126 and the upper layer second terminal 128 hardly increases even when the area of the lower layer metal 124 is increased.
From the above results, when the area of the lower layer metal 124 is increased, the lower layer metal 124 is easily charged, and when there is no second via 116, a via hole for forming the first via 115 is formed to form the lower layer metal 124. It is considered that the lower layer metal 124 at the bottom of the via hole is altered when the 124 is exposed. On the other hand, when the second via 116 is formed, the area of the lower layer metal 124 becomes large, and even if the lower layer metal 124 is charged, the lower layer metal 124 is exposed first in the via hole for the second via 116. Therefore, it is considered that the lower layer metal 124 is not charged and the lower layer metal 124 is not deteriorated when the lower layer metal 124 is exposed in the via hole for the first via 115. As a result, an increase in contact resistance between the lower layer metal 124 and the first via 115 can be prevented.
A metal oxide semiconductor (MOS) is formed on a silicon wafer, the area of the MOS capacitor or the gate oxide film thickness is changed, and patterns having different capacitance values are connected via two metal layers and connection vias formed on the MOS. The resistance values between the metal layers were measured under the respective conditions when connected and when there was a dummy via having a via diameter larger than that of the connected via. As a result, it was shown that the resistance increase does not occur in the pattern in which the dummy via is formed, compared to the pattern without the dummy via even in the same capacity.
The embodiments and examples of the present invention have been described above with reference to the drawings. However, these are examples of the present invention, and various configurations other than the above can be adopted.
In the above embodiment, the form in which the via is formed on the lower layer wiring is shown. However, the present invention can also be applied to the case in which the via is formed on the electrode. For example, on a capacitor including a first electrode formed of a well formed in a silicon substrate and a second electrode formed of polysilicon formed thereon via a silicon oxide film, tungsten is formed. The present invention can also be applied to the case where the connection via configured by the above is formed. Also in this case, when a via hole is formed on the polysilicon, if the polysilicon is charged, the etching gas and the polysilicon react to form an oxide film on the second electrode, and contact with the via. Resistance may increase. However, by applying the present invention, an increase in contact resistance between the via and the second electrode can be suppressed.
It is process sectional drawing which shows the manufacturing process of the semiconductor device in embodiment of this invention. It is process sectional drawing which shows the manufacturing process of the semiconductor device in embodiment of this invention. It is process sectional drawing which shows the manufacturing process of the semiconductor device in embodiment of this invention. It is a top view which shows the wiring pattern in an Example. It is a figure which shows the result of having measured the resistance between the upper layer 1st terminal at the time of varying the area of the lower layer metal in an Example, and an upper layer 2nd terminal. It is a figure which shows the relationship between the magnitude | size of a via hole, and the etching rate of the insulating film at the time of via hole formation.
100 Semiconductor device 101 Lower layer wiring 102 First barrier metal film 104 Wiring metal film 106 Second barrier metal film 108 Interlayer insulating film 110 Photoresist 111 First via opening 112 Second via opening 113 First Via hole 114 second via hole 115 first via 116 second via 117 upper wiring 118 third barrier metal film 120 second wiring metal film 122 fourth barrier metal film
2. A semiconductor device according to claim 1, wherein the material constituting the metal layer is altered at the bottom of the second via.
The semiconductor device according to claim 1,
The semiconductor device according to claim 2, wherein the second via is a dummy via that is not electrically connected to the other conductor.
The semiconductor device according to claim 1 or 2,
The metal layer includes a wiring metal film and a barrier metal film formed on the wiring metal film,
The first via and the second via are formed on the barrier metal film,
The semiconductor device, wherein the barrier metal film is altered at the bottom of the second via.
The semiconductor device according to claim 3.
2. The semiconductor device according to claim 1, wherein the wiring metal film is made of aluminum, copper, silver, or an alloy containing these.
The semiconductor device, wherein the barrier metal film includes a titanium nitride film.
The metal layer includes polysilicon,
A semiconductor device, wherein a polysilicon oxide film is formed at the bottom of the second via.
The semiconductor device, wherein the first via and the second via contain tungsten.
In the step of exposing the upper portion of the metal layer, the metal layer is in a floating state when the first via hole and the second via hole are formed in the insulating film, and at the bottom of the second via hole. Etching is performed under the condition that the metal layer is exposed earlier than the first via hole, and the metal layer is exposed at the bottom first in the second via hole before the first via hole. A method for manufacturing a semiconductor device.
In the manufacturing method of the semiconductor device according to claim 8,
A method of manufacturing a semiconductor device, wherein etching is performed using an etching gas containing halogen in a step of exposing an upper portion of the metal layer.
JP2004155303A 2004-05-25 2004-05-25 Semiconductor device and manufacturing method thereof Expired - Fee Related JP4425707B2 (en)
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