A Survey on ESD protection design in different RF circuits <s> Different Technology of ESD Protection 2.1 At various Frequency <s> Nanoscale CMOS technologies, which were sensitive to electrostatic discharge (ESD), have been widely used to implement radio-frequency (RF) integrated circuits. Against ESD damages, ESD protection design must be included in RF circuits. A novel modified LC-tank ESD protection design was presented in this work. Such ESD protection circuit had been designed for 60-GHz RF applications and verified in a 65-nm CMOS process. The modified LC-tank can lower the power loss and reduce the layout area under the required human-body-model (HBM) ESD robustness, as compared with the traditional designs. With the better performances, the modified LC-tank ESD protection design was very suitable for RF ESD protection. <s> BIB001 </s> A Survey on ESD protection design in different RF circuits <s> Different Technology of ESD Protection 2.1 At various Frequency <s> This paper reviews a co-design technique for ESD protection and RF transmit/receiver (T/R) switches for smartphones from 2G/3G to 5G. Two design examples are discussed: co-design of a 8.5KV-protected SP10T switch in a 180nm SOI CMOS for quad-band GSM and multiple-band WCDMA smartphones, and analysis of ESD-induced impacts on 28GHz/38GHz SPDT switches in a 45nm SOI CMOS for 5G smartphones. The ESD-RFIC co-design technique allows simultaneous design optimization for both ESD protection and RF switch circuits at whole chip level. <s> BIB002
To ensure ultra-high data rate applications credited to continuous dimension reduction and enhanced Radio Frequency (RF) performance, scaled silicon-on-isolation (SOI) CMOS technologies are commonly used for mm-wave ICs to attain low power, low costs and high integration. RF switches are building blocks for RF front end (RFFE) ICs, involving low insertion loss, high isolation and high powerhandling potential. Series-shunt type SPDT RF switches of 28GHz and series-only SPDT switches at 38GHz with ESD protection were designed and fabricated as shown in Fig. 1 BIB002 . The transient voltage across the conventional LC tank ESD protection circuit must be reduced to improve ESD toughness of the RF circuits, especially for the circuits realized in nano scale CMOS technology. Therefore, a new modified LC-Tank ESD protection design is proposed by Chun-Yu. For 60-GHz RF applications ESD protection circuit has been designed and proposed in this article. The LC-tanks are designed to reverberate for "open circuit" at the operating frequency of the RF circuit ( Fig. 2) . Thus, the parasitic effects of ESD diodes (DP and DN) will be isolated. The modified LC-tank ESD protection design has been verified to achieve the required 2kV -Human Body Model (HBM) ESD robustness with the lower power loss and smaller layout area BIB001 .