A Survey on ESD protection design in different RF circuits <s> Figure 2 Modified LC-tank ESD protection design in RF circuits with (a) a pair of inductors and (b) only one inductor [5] <s> In this paper, a fully integrated low noise amplifier (LNA) employing a cascode topology and an RC feedback network is proposed for an ultra-wideband (UWB) wireless system in a 0.18-mum RF CMOS technology. By using two single-stage cascode topologies, the function of both a single-end input and differential output is achieved. The wideband input impedance and noise matching is conducted by employing an RC feedback network, a degenerating inductor (Ls) and a gate one (Lg). The simulation results show that the average power gain (S21 or S31) is about 11 dB and the input return loss (S11) is less than -10 dB over the whole frequency range of 3 to 5 GHz. In addition, the noise figure (NF) is from 2.5 to 3.5 dB over 3-5 GHz while consuming 49 mW under a 1.8 V single supply voltage. <s> BIB001 </s> A Survey on ESD protection design in different RF circuits <s> Figure 2 Modified LC-tank ESD protection design in RF circuits with (a) a pair of inductors and (b) only one inductor [5] <s> ESD protection is critical to RF (Radio Frequency) circuits. However, linearity and parasitic capacitance that ESD protection devices present adversely affect the performance of such circuits. To address challenges in millimeter-wave RF I/O ESD protection, a robust ESD solution with adjustable working frequency is proposed. The design methodology is demonstrated through an example design. S-parameters characterization and ESD test using TLP electrical stress are presented to verify the proposed design. <s> BIB002
Design of ESD Protection for Large Signal Swing RF Inputs Operating to 24GHz in 0.18mm SiGe Bi CMOS Process by Srivatsan Parthasarathy BIB002 (Fig. 3 ). The performance deprivation resulting from the addition of ESD protection devices to very high-speed Analog/RF designs is the main cause for low ESD toughness in these applications. This paper introduces an ESD method that combines device development and characterization as well as simulation, for high speed Analog/RF products. In this work a special ground referenced ESD network is introduced for protecting RF ports with asymmetrical signal swings in the range of +3.5V/-3.5V operating from 6-24GHz BIB002 . A probable gain as well as ultrahigh isolation in RF switch circuit in 0.18um bicmos technology is established. The RF switch attains an ultrahigh isolation by cancelling of RF leaking technique in which it is restrained by combining its duplication using balun. As compare to convention switch topology its isolation is higher. RF switches such as SPST and T/R switches, etc can be used for higher isolations in the microwave and millimeter-wave regions [7] . The UWB which is also known as ulta-wideb and for radio communication it is one of the technologies for transmitting and receiving short, information-encoded, electromagnetic impulses. The proposed LNA is designed using single-stage cascade topologies. This circuit includes the bias network which has a power consumption of 49mW BIB001 .