ION TRAP DEVICE
FIG2 is a sectional view showing a schematic configuration of the heatsinks, heaters, temperature sensors and switching elements in the same embodiment
The main power unit 4 further includes a first heatsink 93a and a second heatsink 93b as the characteristic components of the present invention. Both heatsinks 93a and 93b are made of aluminum nitride, which is a highly heat-conductive ceramic material. The first heatsink 93a is attached to the first switching element 45, while the second heatsink 93b is attached to the second switching element 46. FIG2 shows a cross sectional structure of these heatsinks. Each of the heatsinks 93a and 93b has a rectangular parallelpiped base portion 96a or 96b with a plurality of plate-shaped fins 97a or 97b standing on its upper surface. The base portion 96a or 96b has cavities extending from its side surface inwards, with a sheet heater 94a or 94b and a temperature sensor 95a or 95b inserted into those cavities, respectively. Although the heater 94a or 94b in FIG2 is located above the temperature sensor 95a or 95b, their positional relationship is not limited to this one. For example, the temperature sensor 95a or 95b may be located at a lateral side of the heater 94a or 94b. The heater 94a or 94b may be integrally formed with the heatsink 93a or 93b by sintering the aluminum nitride after embedding the heater 94a or 94b in the base portion 96a or 96b in the production process of the heatsink 93a or 93b. The temperature sensors 95a and 95b as well as the heaters 94a and 94b are individually connected to the temperature control unit 9.
sectional view
46
switching elements switching element
2
ion trap
45
switching elements switching element
11
laser-beam generator
['1. An ion trap device, comprising: a) an ion trap including a plurality of electrodes; b) a rectangular voltage generator including a voltage source for generating a direct voltage and a switching section, the rectangular voltage generator configured to operate the switching section to generate a rectangular voltage by switching the direct voltage generated by the voltage source, and to apply the rectangular voltage to at least one of the plurality of electrodes; and c) a switching section temperature controller configured to control a temperature of the switching section so as to maintain the temperature of the switching section at a target temperature which is higher than a highest reaching temperature of the switching section during an operation of the ion trap and lower than a highest permissible temperature for an operation of the switching section.', '2. The ion trap device according to claim 1, wherein: the switching section includes a semiconductor switching element; and the switching section temperature controller includes: d) a heatsink thermally connected to the semiconductor switching element; e) a heater configured to heat the heatsink; f) a temperature sensor configured to measure a temperature of the heatsink; and g) a controller configured to control the heater so that the temperature measured with the temperature sensor becomes closer to the target temperature.']