ION TRAP DEVICE
FIG1 is configuration diagram of the main components of an ion trap mass spectrometer including an ion trap device according to one embodiment of the present invention
One embodiment of the ion trap mass spectrometer including an ion trap device according to the present invention is hereinafter described with reference to the attached drawings. FIG1 is a configuration diagram of the main components of the ion trap mass spectrometer according to the present embodiment.
configuration diagram
5
auxiliary power unit
1
ionization unit
45
switching elements switching element
42
second voltage source
43
first switching section
46
switching elements switching element
12
sample plate
92
current generator
6
timing signal generation unit
25
91
current controller
32
secondary electron multiplier tube
72
41
first voltage source
21
ring electrode
44
second switching section
23
13
extraction electrode
8
data processing unit
71
frequency determiner
7
control unit
14
ion lens
4
main power unit
2
ion trap
['1. An ion trap device, comprising: a) an ion trap including a plurality of electrodes; b) a rectangular voltage generator including a voltage source for generating a direct voltage and a switching section, the rectangular voltage generator configured to operate the switching section to generate a rectangular voltage by switching the direct voltage generated by the voltage source, and to apply the rectangular voltage to at least one of the plurality of electrodes; and c) a switching section temperature controller configured to control a temperature of the switching section so as to maintain the temperature of the switching section at a target temperature which is higher than a highest reaching temperature of the switching section during an operation of the ion trap and lower than a highest permissible temperature for an operation of the switching section.', '2. The ion trap device according to claim 1, wherein: the switching section includes a semiconductor switching element; and the switching section temperature controller includes: d) a heatsink thermally connected to the semiconductor switching element; e) a heater configured to heat the heatsink; f) a temperature sensor configured to measure a temperature of the heatsink; and g) a controller configured to control the heater so that the temperature measured with the temperature sensor becomes closer to the target temperature.', '3. The ion trap device according to claim 1, wherein: the rectangular voltage generator includes: h) a first voltage source configured to generate a direct voltage; i) a second voltage source configured to generate a direct voltage different from the direct voltage generated by the first voltage source; j) a first switching section configured to turn on and off an output of the direct voltage from the first voltage source; and k) a second switching section configured to turn on and off an output of the direct voltage from the second voltage source, and the rectangular voltage generator is configured to generate the rectangular voltage by alternately turning on and off the first switching section and the second switching section, where the first switching section and the second switching section are each formed by a single semiconductor switching element made of a silicon carbide semiconductor.']