SEMICONDUCTOR PACKAGE STRUCTURE WITH ANTENNA
FIG2B is a plan view of an exemplary configuration of dummy metal through via structures in the semiconductor package structure of FIG2A in accordance with some embodiments
FIG2B is a plan view of an exemplary configuration of dummy metal through via structures 115 in the semiconductor package structure 20 of FIG2A in accordance with some embodiments. As shown in FIG2B, the dummy metal through via structures 115 surround the semiconductor die 100 to serve as an additional shielding structure for the sidewalls of the semiconductor die 100. In some embodiments, those dummy metal through via structures 115 are electrically isolated from the RDL structure 106 and the RDL structure 120. In some embodiments, at least one of the plurality of dummy metal through via structures 115 overlaps the second portion 143 of the first antenna element 140a and the second portion 143' of the second antenna element 140b, as viewed from a top-view perspective. Those dummy metal through via structures 115 in the molding compound layer 110 may be disposed between the semiconductor die 100 and the antenna 114 and/or the through via structures 112. It should be noted that the number of dummy metal through via structures 115, and the shape and the size of the dummy metal through via structure 115 shown in FIG2B are only an example and are not a limitation to that disclosed in the embodiment. It should also be noted that the number and the arrangement of second antenna elements 140b, and the shape and the size of the second antenna element 140b shown in FIG2B are only an example and are not a limitation to that disclosed in the embodiment.
plan view
100
semiconductor die
115
metal through via structures metal through via structure
128
molding compound layer
['1. A semiconductor package structure, comprising: a semiconductor die; a first redistribution layer (RDL) structure formed on a non-active surface of the semiconductor die; a second RDL structure formed on and electrically coupled to an active surface of the semiconductor die; a ground layer formed in the first RDL structure; a first molding compound layer formed on the first RDL structure; and a first antenna, comprising: a first antenna element formed in the second RDL structure; and a second antenna element formed on the first molding compound layer, wherein each of the first antenna element and the second antenna element has a first portion overlapping the semiconductor die as viewed from a top-view perspective.', '6. The semiconductor package structure as claimed in claim 1, further comprising a plurality of dummy metal through via structures formed in the second molding compound layer and surrounding the semiconductor die.']