MAGNETIC MEMORY DEVICES AND METHODS OF FABRICATION
FIG5B illustrates a cross-sectional view of the structure in FIG4A following the patterning of the conductive layer and the pMTJ material layer stack to form a pMTJ device
FIG5B illustrates a cross-sectional view of the structure in FIG4A following the patterning of the conductive layer 321 and the pMTJ material layer stack 340. In an embodiment, the patterning process includes etching the conductive layer 321 by a plasma etch process to form a top electrode 120. In an embodiment, plasma etch process possesses sufficient ion energy and chemical reactivity to render vertical etched sidewalls of the top electrode 120.
cross-sectional view
325
dashed lines
304
conductive interconnect conductive interconnects
302
dielectric layer
112
fixed magnet
300
device devices
101
bottom electrode
340
pMTJ material layer stack
110
tunnel barrier
109
coupling layer
['1. A memory device, comprising: a bottom electrode; a top electrode; and a magnetic tunnel junction (MTJ) between the bottom electrode and the top electrode, the MTJ comprising: a fixed magnet; a free magnet structure comprising; a first free magnet; and a second free magnet adjacent the first free magnet, wherein at least a portion of the first free magnet proximal to an interface with the second free magnet comprises a transition metal; and a tunnel barrier between the fixed magnet and the free magnet structure.', '3. The memory device of claim 1, further comprising a coupling layer between the first free magnet and the second free magnet, wherein the coupling layer is discontinuous, has a thickness no more than 0.1nm and comprises the transition metal.']