PYROELECTRIC SENSOR
FIG5 is a schematic cross sectional view showing a substrate used in Example 2
Instead of the plate-shaped Si substrate in Example 1, a cavity wafer including a hollow portion in which a pressure was reduced was used as a substrate. As the substrate 14, as shown in FIG5, a substrate in which a hollow portion 14a is provided in an Si wafer and thicknesses of an upper layer 14b and a lower layer 14c surrounding the hollow portion 14a were respectively 20 µm, and a thickness of the wafer was 500 µm was used.
schematic cross-sectional view
103
infrared sensing portion
5
image sensor
14
substrate
20
laminated portion
105
cavity portion
102
Si substrate
101
infrared sensor
500
wafer was
['1. A pyroelectric sensor comprising: an Si substrate; a laminated portion in which a heat absorption layer formed of an inorganic material, a lower electrode, a piezoelectric film, and an upper electrode are laminated in this order from one surface side of the Si substrate on the one surface; and an optical filter that is provided at a position of the other surface of the Si substrate corresponding to the laminated portion and selectively transmits an infrared ray, wherein an infrared ray incident to the laminated portion from the optical filter side through the Si substrate is sensed.']