SURFACE-EMITTING LASER AND METHOD FOR MANUFACTURING SURFACE-EMITTING LASER
FIG5 is a cross-sectional view that schematically explains the cross section of the optical guide layer substrate corresponding to (a1), (a4) and (b) of FIG4
At this time, the distance D1 between the (000-1) plane, which was the top surface of the embedded hole CH, and a (0001) plane, which was an outermost surface of the n-optical guide layer 14, was approximately 140 nm (FIG5, (a4)). The opening radius R of the {10-11} facet was approximately 82 nm (FIG5, (a4)). At this time, the distance D2 between a plane (top surface, (000-1) plane) of the embedded hole (cavity) 14C on the side of the active layer 15 and a front surface (i.e., (0001) plane) of the n-optical guide layer 14 was approximately 105 nm (FIG5, (b)). The height HC of the hole 14C was approximately 110 nm, and the diameter (width in cross section) WC of the hole CH was approximately 60 nm.
cross-sectional view
15
active layer
14
layer
5
was approximately
['1. A method for manufacturing a surface emitting laser made of a group-III nitride semiconductor by an MOVPE method, comprising: (a) a step of growing a first cladding layer of a first conductive type on a substrate; (b) a step of growing a first optical guide layer of said first conductive type on said first cladding layer; (c) a step of forming holes having a two-dimensional periodicity in a plane parallel to said first optical guide layer, in said first optical guide layer by etching; (d) a step of supplying a gas containing a group-III material and a nitrogen source and performing growth to form recessed portions having a facet of a predetermined plane direction top of openings of said holes, thereby closing the openings of said holes; and (e) a step of planarizing said recessed portions by mass transport, after said openings of said holes have been closed, wherein after said planarizing step has been performed, at least one of side surfaces of said hole is a {10-10} facet.']