MAGNETIC MEMORY DEVICES AND METHODS OF FABRICATION
FIG2 illustrates a flow diagram of a method to fabricate a memory device
FIG2 illustrates a flow diagram of a method to fabricate a memory device. The method 200 begins at operation 210 by forming a first electrode in a dielectric layer above a substrate. The method 200 continues at operation 220 with the formation of a pMTJ material layer stack on the bottom electrode. In exemplary embodiments, all layers in the pMTJ material layer stack are blanket deposited in-situ without breaking vacuum. In a simplest embodiment, forming the pMTJ material layer stack includes deposition of a SAF layer on the bottom electrode, deposition of a fixed magnetic layer on the SAF layer, deposition of a tunnel barrier on the fixed magnetic layer, deposition of a first free magnetic layer on the tunnel barrier, deposition of a coupling layer on the second free magnetic layer, deposition of a second free magnetic layer on the coupling layer and deposition of a capping layer on the second free magnetic layer. The method 200 is continued at operation 240 with patterning of the pMTJ material layer stack to form a memory device. The method 200 is then resumed at operation 240 with the deposition of dielectric spacer and patterning to form a dielectric spacer adjacent to sidewalls of the memory device.
flow diagram
220
continues at operation
210
begins at operation
200
method
240
at operation
['9. A method of fabricating a memory device, comprising: forming a bottom electrode layer; forming a material layer stack on the bottom electrode layer, the forming comprising: forming a fixed magnetic layer above the bottom electrode layer; forming a tunnel barrier layer on fixed magnetic layer; forming a first free magnetic layer on the tunnel barrier layer; forming a coupling layer on the first free magnetic layer, wherein the coupling layer comprises a transition metal and has a thickness no more 0.1nm; and forming a second free magnetic layer on the coupling layer; forming a top electrode on the material layer stack; and etching the material layer stack to form a memory device.']