MAGNETIC MEMORY DEVICES AND METHODS OF FABRICATION
FIG5C illustrates a cross-sectional view of the structure in FIG5B following the formation of a dielectric spacer adjacent to the pMTJ
FIG5C illustrates a cross-sectional view of the structure in FIG5B following the formation of a dielectric spacer 326 adjacent to the memory device 300. In an embodiment, a dielectric spacer layer is deposited on the memory device 300 and on the uppermost surface of the dielectric layer 102. In an embodiment, the dielectric spacer layer is deposited without a vacuum break following the plasma etch process to prevent oxidation of magnetic layers in the pMTJ 104. In an embodiment, the dielectric spacer layer includes a material such as, but not limited to, silicon nitride, carbon doped silicon nitride or silicon carbide. In an embodiment, the dielectric spacer layer includes an insulator layer that does not have oxygen to minimize oxidation of the magnetic layers 112,107 and 108. In an embodiment, the dielectric spacer layer is etched by a plasma etch process forming dielectric spacer 326 on sidewalls of the memory device 300.
cross-sectional view
304
conductive interconnect conductive interconnects
302
dielectric layer
326
dielectric spacer
300
device devices
101
bottom electrode
340
pMTJ material layer stack
110
tunnel barrier
109
coupling layer
['1. A memory device, comprising: a bottom electrode; a top electrode; and a magnetic tunnel junction (MTJ) between the bottom electrode and the top electrode, the MTJ comprising: a fixed magnet; a free magnet structure comprising; a first free magnet; and a second free magnet adjacent the first free magnet, wherein at least a portion of the first free magnet proximal to an interface with the second free magnet comprises a transition metal; and a tunnel barrier between the fixed magnet and the free magnet structure.', '3. The memory device of claim 1, further comprising a coupling layer between the first free magnet and the second free magnet, wherein the coupling layer is discontinuous, has a thickness no more than 0.1nm and comprises the transition metal.']