SURFACE-EMITTING LASER AND METHOD FOR MANUFACTURING SURFACE-EMITTING LASER
FIG2 is a cross-sectional view schematically illustrating a structure of a photonic crystal surface emitting laser according to a first embodiment
FIG2 is a schematic cross-sectional view of a structure of a surface emitting laser (hereinafter sometimes simply referred to as photonic crystal surface emitting laser) 10 including a photonic crystal layer according to a first embodiment. As shown in FIG2, a semiconductor structure layer 11 is formed on a substrate 12. More specifically, an n-cladding layer 13, an n-optical guide layer 14, an active layer 15, a optical guide layer 16, an electron blocking layer 17, and a p-cladding layer 18 are sequentially formed in this order on the substrate 12. In other words, the semiconductor structure layer 11 is constituted of the semiconductor layers 13, 14, 15, 16, 17, and 18. The n-optical guide layer 14 contains a photonic crystal layer 14P.
cross-sectional view
17
electron blocking layer
14
layer
12
substrate
11
semiconductor structure layer
18
p-cladding layer
16
optical guide layer
10
surface emitting laser
15
active layer
13
n-cladding layer
['1. A method for manufacturing a surface emitting laser made of a group-III nitride semiconductor by an MOVPE method, comprising: (a) a step of growing a first cladding layer of a first conductive type on a substrate; (b) a step of growing a first optical guide layer of said first conductive type on said first cladding layer; (c) a step of forming holes having a two-dimensional periodicity in a plane parallel to said first optical guide layer, in said first optical guide layer by etching; (d) a step of supplying a gas containing a group-III material and a nitrogen source and performing growth to form recessed portions having a facet of a predetermined plane direction top of openings of said holes, thereby closing the openings of said holes; and (e) a step of planarizing said recessed portions by mass transport, after said openings of said holes have been closed, wherein after said planarizing step has been performed, at least one of side surfaces of said hole is a {10-10} facet.']