METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
FIG1] is view for explaining a method of manufacturing a semiconductor device being one embodiment in one aspect in this disclosure 
The method of manufacturing the semiconductor device in this embodiment is including a predetermined application step, a predetermined semi-sintering step, and a predetermined bonding step as described above. Hereinafter, the respective steps will be explained in detail with reference to the drawing. FIG1 is view for explaining the method of manufacturing the semiconductor device. In the first step (application step), a predetermined bonding resin composition is applied on a semiconductor chip supporting member. By this application, a coating film 12 of the bonding resin composition is formed on a semiconductor chip supporting member 11 (FIG1(a)). This coating film 12 is to be formed at a place where a semiconductor chip is arranged according to a configuration of the semiconductor device to be manufactured, and can be formed at an arbitrary place. In the second step (semi-sintering step), the bonding resin composition (coating film 12) applied on the semiconductor chip supporting member 11 is heated, to thereby bring the silver microparticles in the bonding resin composition into a semi-sintered state to form a bonding resin composition 12s (FIG1(b)). In the semi-sintering step, curing of the bonding resin composition is prevented from progressing. In order to make such a state, in this semi-sintering step, it is heated at a temperature that is lower than a reaction starting temperature of the used thermosetting resin and is equal to or more than 50°C. The heating can be performed by using a well-known heating means such as a heater, but heating conditions are slightly mild, and thus the heating can also be performed by preparing a hot plate 30 and performing hearing on the hot plate 30 as illustrated in FIG1(b) (FIG1(b)). In the third step (bonding step), on the bonding resin composition containing the silver microparticles in a semi-sintered state, which is formed in the second step (semi-sintering step), a semiconductor chip 13 is placed (FIG1(c-1) to be further heated, and thereby the bonding resin composition is cured. In this manner, the semiconductor chip 13 is bonded to the semiconductor chip supporting member 11 with a cured product 21 of the bonding resin composition intervening therebetween (FIG1(c-2)).
view
30
hot plate
12
film
11
semiconductor chip supporting member
10
fall within
21
cured product
13
semiconductor chip
['1. A method of manufacturing a semiconductor device comprising, at least following steps of (1) to (3): (1) a first step being an application step of applying a bonding resin composition on a semiconductor chip supporting member, the bonding resin composition containing a thermosetting resin and silver microparticles having an average particle size of 10 to 200 nm, the silver microparticles having a protective layer made of an organic compound on surfaces thereof; (2) a second step being a semi-sintering step of heating the applied bonding resin composition at a temperature that is lower than a reaction starting temperature of the thermosetting resin and is equal to or more than 50°C to bring the silver microparticles into a semi-sintered state; and (3) a third step being a bonding step including: placing a semiconductor chip on the bonding resin composition containing the silver microparticles in a semi-sintered state; heating at a temperature higher than the reaction starting temperature of the thermosetting resin in a pressure-free state; and bonding the semiconductor chip to the semiconductor chip supporting member.']