SUPPORT FOR A SEMICONDUCTOR STRUCTURE
FIG1 schematically shows a support for a semiconductor structure according to the invention
FIG1 schematically shows a support 1 for a semiconductor structure according to the invention. The support 1 may take the form of a circular wafer of standardized size, for example of 200 mm or 300 mm or even 450 mm in diameter. However, the invention is in no way limited to these dimensions or to this shape. Returning to the description of the support 1 shown in FIG1, it is optionally possible to provide a second insulating layer 4 on the trapping layer 2 and in direct contact therewith, in order to facilitate the assembly of the support 1 with a semiconductor structure. This second insulating layer 4 may be formed by deposition or by oxidation of the trapping layer 2. Provision may be made for a polishing step before and/or after the formation of the second insulating layer 4, in order to improve the quality of this assembly.
schematic
3
base substrate
2
trapping layer
6
with another insulating layer
['1. Support (1) for a semiconductor structure or a surface or bulk acoustic wave type device comprising: - a base substrate (3); - a first silicon dioxide insulating layer (2a) positioned on the base substrate (3) and having a thickness greater than 20 nm; - a charge trapping layer (2) having a resistivity higher than 1000 ohm.cm and a thickness greater than 5 microns positioned on the first insulating layer (2a).']