SURFACE-EMITTING LASER AND METHOD FOR MANUFACTURING SURFACE-EMITTING LASER
FIG1 is a graph of the relationship between a filling factor (FF) and a radiation factor of a photonic crystal portion in an emission direction
As to the aforementioned (2), FIG1 shows the relationship between a filling factor (FF) and a radiation constant of a photonic crystal portion in an emission direction, in a square-lattice two-dimensional photonic crystal having, for example, a period of 161 nm and a distance between an active layer and the photonic crystal portion of 80 nm.
graph
15
active layer
5
was approximately
10
surface emitting laser
11
semiconductor structure layer
['1. A method for manufacturing a surface emitting laser made of a group-III nitride semiconductor by an MOVPE method, comprising: (a) a step of growing a first cladding layer of a first conductive type on a substrate; (b) a step of growing a first optical guide layer of said first conductive type on said first cladding layer; (c) a step of forming holes having a two-dimensional periodicity in a plane parallel to said first optical guide layer, in said first optical guide layer by etching; (d) a step of supplying a gas containing a group-III material and a nitrogen source and performing growth to form recessed portions having a facet of a predetermined plane direction top of openings of said holes, thereby closing the openings of said holes; and (e) a step of planarizing said recessed portions by mass transport, after said openings of said holes have been closed, wherein after said planarizing step has been performed, at least one of side surfaces of said hole is a {10-10} facet.']