ORGANIC SEMICONDUCTOR ELEMENT, ORGANIC SEMICONDUCTOR COMPOSITION, ORGANIC SEMICONDUCTOR FILM PRODUCTION METHOD, ORGANIC SEMICONDUCTOR FILM, AND COMPOUND AND POLYMER USED THEREFOR
FIG2 is a cross-sectional schematic view illustrating a bottom gate-top contact-type organic thin film transistor element which is an example of the semiconductor element according to the embodiment of the present invention 
FIG2 is a cross-sectional schematic view indicating a bottom gate-top contact-type organic thin film transistor element 200 which is an example of the semiconductor element of the present invention. As illustrated in FIG2, the organic thin film transistor element 200 has a base material 10, a gate electrode 20, a gate insulating film 30, a source electrode 40, a drain electrode 42, an organic semiconductor film 50, and a sealing layer 60.
cross-sectional view
30
preferably
100
element
2
Formula
20
preferably
40
source electrode
42
drain electrode
200
thin film transistor element
0
preferably
50
preferably
60
sealing layer
['1. An organic semiconductor element, comprising: an organic semiconductor layer containing a compound represented by Formula (1), a compound represented by Formula (2), and/or a compound represented by Formula (3), or containing a polymer having at least one structural unit represented by any one of Formulae (8) to (10), in each formula, X 1  represents a nitrogen atom or CR a , rings A and B each are a 5-membered or 6-membered aromatic heterocyclic ring having a nitrogen atom as a ring-constituting atom or a fused ring including a 5-membered or 6-membered aromatic heterocyclic ring having a nitrogen atom as a ring-constituting atom, Y 1  represents an oxygen atom, a sulfur atom, CR b 2 , or NR c , V 1  represents NR d , an oxygen atom, a sulfur atom, or a selenium atom, R a , R b , R c , and R d  each represent a hydrogen atom or a substituent, R 1  represents a halogen atom or a group represented by Formula (W), and p is an integer of 0 to 2, n represents 1 or 2, * represents a bonding site, *-L-T Formula (W) in Formula (W), L is a single bond, or a divalent group represented by any one of Formulae (L-1) to (L-25), or a divalent group formed by bonding two or more divalent groups represented by any of (L-1) to (L-25), T represents a hydrogen atom, a halogen atom, or a cyano group, * represents a bonding site, in Formulae (L-1) to (L-25), the wavy line portion represents a bonding site to a ring structure represented by Formula (1) to (3), and (8) to (10), or a bonding site to * of a divalent group represented by any one of Formulae (L-1) to (L-25), * represents a bonding site to T, or a bonding site to a wavy line portion of a divalent group represented by any one of Formulae (L-1) to (L-25), in Formulae (L-1), (L-2), (L-6), and (L-13) to (L-24), R A  represents a hydrogen atom or a substituent, in Formula (L-13), m is an integer of 1 to 4, m in Formulae (L-14) and (L-15) is an integer of 1 to 3, and m in Formulae (L-16) to (L-20) is 1 or 2, and m in Formula (L-22) is an integer of 1 to 6, in Formulae (L-20) and (L-24), R N  represents a hydrogen atom or a substituent, and in Formula (L-25), R si  represents a hydrogen atom, an alkyl group, an alkenyl group, or an alkynyl group.', '14. The organic semiconductor element according to any one of claims 1 to 12, wherein the organic semiconductor element is an organic thin film transistor element.']