PACKAGE STRUCTURE AND MANUFACTURING METHOD THEREOF, AND DISPLAY DEVICE
FIG12 is a schematic diagram after an inorganic layer coated on an organic layer is formed on the outside of the organic layer provided in an embodiment of the present disclosure  FIG13 is a schematic diagram after a barrier layer is formed on an inorganic layer coated on an organic layer provided in an embodiment of the present disclosure   FIG10 is a schematic diagram after an inorganic layer coated on a display device to be encapsulated is formed on the outside of the display device provided in an embodiment of the present disclosure  FIG11 is a schematic diagram after an organic layer coated on an inorganic layer is formed on the outside of the inorganic layer provided in an embodiment of the present disclosure
Refer to FIG12, which shows a schematic diagram after an inorganic layer 031 coated on the organic layer 032 is formed on the outside of the organic layer 032 provided in accordance with an embodiment of the present disclosure. Referring to FIG12, the inorganic layer 031 is coated on the outside of the organic layer 032. For the implementation process of step 903, reference may be made to step 901, and details are not repeated in the embodiment of the present disclosure.  Refer to FIG13, which shows a schematic diagram after a barrier layer 033 is formed on the inorganic layer 031 coated on the organic layer 032 in accordance with an embodiment of the present disclosure. The barrier layer 033 may be formed by silicon dioxide or silicon nitride, and the thickness of the barrier layer 033 may be set based on actual needs. For example, a layer of silicon dioxide may be deposited on the inorganic layer 031 coated on the organic layer 032 with a method, such as coating, magnetron sputtering, thermal evaporation, or plasma enhanced chemical vapor deposition (PECVD), to obtain a silicon dioxide layer, and then the silicon dioxide layer is processed through a single patterning process to obtain the barrier layer 033. The process of processing the silicon dioxide layer through a single patterning process to obtain the barrier layer 033 is similar to the process of processing the SiNx layer through a single patterning process to obtain the inorganic layer 031, and details are not repeated in the embodiment of the present disclosure.  Refer to FIG10, which shows a schematic diagram of the base substrate 05 provided with the device to be encapsulated 04 after the inorganic layer 031 is formed on the base substrate 05 provided in accordance with an embodiment of the present disclosure. A TFE CVD process may be adopted to deposit a layer of SiNx on the base substrate 05 on which the device to be encapsulated 04 is formed to form a SiNx layer, and then the SiNx layer is processed through a single patterning process to obtain the inorganic layer 031. The single patterning process includes photoresist coating, exposure, developing, etching, and photoresist stripping. Therefore, processing the SiNx layer through the single patterning process to obtain the inorganic layer 031 includes: coating a layer of photoresist on the SiNx layer to obtain a photoresist layer, exposing the photoresist layer with a mask plate to form a fully exposed area and a non-exposed area on the photoresist layer, processing the exposed photoresist layer through a developing process to remove the photoresist in the fully exposed area and retain the photoresist in the non-exposed area, etching the area on the SiNx layer corresponding to the fully exposed area, and finally stripping off the photoresist in the non-exposed area, to form the inorganic layer 031 in the area on the SiNx layer corresponding to the non-exposed area. It should be noted that the embodiment of the present disclosure is described by taking an example in which a positive photoresist is used to form the inorganic layer 031. In practice, a negative photoresist may also be used to form the inorganic layer 031, which is not repeated in detail in the embodiment of the present disclosure.  The preset process may include an ink-jet printing process or a coating process. For example, refer to FIG11, which shows a schematic diagram after the organic layer 032 covering the inorganic layer 031 is formed on the outside of the inorganic layer 031 provided in accordance with an embodiment of the present disclosure. Referring to FIG11, the organic layer 032 is coated on the outside of the inorganic layer 031. In the embodiment of the present disclosure, the mixture including the polymeric monomer, the initiator, the chain transfer agent, and the repairing microstructure may be coated (or ink-jet printed) on the outside of the inorganic layer 031 to obtain the mixture layer, and then the mixture layer may be heated so that the polymeric monomer in the mixture layer undergoes a polymerization reaction under the action of the initiator and the chain transfer agent to obtain the organic layer 032. The mixture layer may be heated so that the temperature of the mixture layer is within a preset temperature range of 30 degrees Celsius to 70 degrees Celsius. In actual implementation, a substrate formed with the mixture layer may be placed in an environment of 30 degrees Celsius to 70 degrees Celsius for a preset duration. In the environment of 30 degrees Celsius to 70 degrees Celsius, the polymeric monomer may undergo a polymerization reaction within a preset period of time under the action of the initiator and the chain transfer agent to obtain the organic layer 032. The preset duration may be set in accordance with actual needs, and the preset duration may generally be changed. The preset duration is related to the temperature. For example, in the temperature range from 30 degrees Celsius to 70 degrees Celsius, the higher the temperature is, the shorter the preset duration is.
schematic diagram
051
TFT layer
042
green light emitting unit
032
organic layer
04
be encapsulated
033
barrier layer
041
red light emitting unit
031
inorganic layer inorganic layers
043
blue light emitting unit
03
encapsulation structure
['1. An encapsulation structure, comprising a plurality of film layers coated on the outside of a device to be encapsulated, wherein the plurality of film layers comprises an inorganic layer and an organic layer that are overlaid, and the organic layer comprises a polymer matrix and a repairing microstructure.', '12. The encapsulation structure according to any one of claims 1 to 11, wherein the encapsulation structure further comprises: a barrier layer disposed on the outside of the plurality of film layers, and a cover plate disposed on the barrier layer.']