SEMICONDUCTOR NANOPARTICLE, METHOD FOR PRODUCING SAME, AND LIGHT-EMITTING DEVICE
FIG3 is a graph showing an XRD pattern of semiconductor nanoparticles according to Example 4
For the semiconductor nanoparticles obtained in Example 4, the X-ray analysis (XRD) pattern was determined, and compared with tetragonal crystal (chalcopyrite) AgInS2 and orthorhombic crystal AgInS2. FIG3 shows the determined XRD pattern. The XRD pattern shows that the semiconductor nanoparticles of Example 4 have about the same crystal structure as the tetragonal crystal AgInS2. The XRD pattern was determined using a powder X-ray diffractometer (trade name: SmartLab) by Rigaku.[Table 3]Ag/(Ag+Ga+h)Ga/(h+Ga)S/(Ag+Ga+h)Average particle diameter (nm)Band edge emission wavelength (nm)Half bandwidth (nm)Bandedge/DAPDAP transition emission wavelength (nm)Example 10.120.580.76<10580572.538685Example 20.270.291.143.9580423.674690Example 30.070.710.66<10575481.97680Example 40.500.631.322.8514445.93600Example 50.460.651.27<10511462.482607Example 60.360.850.84<10540481.615680Example 70.490.521.51<10513481.561609Example 80.510.531.37<10519551.403638Example 90.480.651.28<10512451.56611Example 100.420.721.413.55103814.7600Example 110.420.731.344.3520389.9600Comparative Example 10.43-1.2410.4-212-810Comparative Example 20.49-1.233.8-172-750Comparative Example 30.37-1.344.359047-710
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['1. Semiconductor nanoparticles, comprising: Ag, In, Ga, and S, wherein a ratio of a number of Ga atoms to a total number of In and Ga atoms is 0.95 or less, wherein the semiconductor nanoparticles emit light having an emission peak with a wavelength in a range of from 500 nm to less than 590 nm, and a half bandwidth of 70 nm or less, and wherein the semiconductor nanoparticles have an average particle diameter of 10 nm or less.']