SEMICONDUCTOR PACKAGE STRUCTURE WITH ANTENNA
FIG4B is a plan view of an exemplary configuration of a metal isolation layer in the semiconductor package structure of FIG4A in accordance with some embodiments
FIG4B is a plan view of an exemplary configuration of a metal isolation layer in the semiconductor package structure 40 of FIG4A in accordance with some embodiments. As shown in FIG4B, the metal isolation layer 142 serves as an additional shielding structure for isolating the second antenna element 140b of the antennas 140 (e.g., the patch antennas) from each other. The method and material used for forming the metal isolation layer 142 may be the same as or similar to those of the second antenna element 140b of the antennas 140. It should be noted that the number of through via structure 144, and the shape and the size of the through via structure 144 and those of the metal isolation layer 142 shown in FIG4B are only an example and are not a limitation to that disclosed in the embodiment. It should also be noted that the number and the arrangement of second antenna elements 140b, and the shape and the size of the second antenna element 140b shown in FIG4B are only an example and are not a limitation to that disclosed in the embodiment.
plan view
100
semiconductor die
144
through via structure
142
metal isolation layer
128
molding compound layer
['1. A semiconductor package structure, comprising: a semiconductor die; a first redistribution layer (RDL) structure formed on a non-active surface of the semiconductor die; a second RDL structure formed on and electrically coupled to an active surface of the semiconductor die; a ground layer formed in the first RDL structure; a first molding compound layer formed on the first RDL structure; and a first antenna, comprising: a first antenna element formed in the second RDL structure; and a second antenna element formed on the first molding compound layer, wherein each of the first antenna element and the second antenna element has a first portion overlapping the semiconductor die as viewed from a top-view perspective.', '3. The semiconductor package structure as claimed in claim 1, further comprising: a second molding compound layer surrounding the semiconductor die; a through via structure formed in the second molding compound layer and electrically coupled between the ground layer and the second RDL structure; and a second antenna formed in the second molding compound layer and electrically coupled to the ground layer by the second RDL structure and the through via structure.', '10. The semiconductor package structure of claim 1, wherein the second antenna element comprises a plurality of second antenna elements, and the semiconductor package structure further comprises a metal isolation layer formed on the first molding compound layer to isolate respective antenna elements of the plurality of second antenna elements from each other.']