Optimizing the Bi_(2-x)Sb_(x)Te_(3-y)Se_(y) solid solutions to approach the intrinsic topological insulator regime

Abstract: To optimize the bulk-insulating behavior in the topological insulator materials having the tetradymite structure, we have synthesized and characterized single-crystal samples of Bi_(2-x)Sb_(x)Te_(3-y)Se_(y) (BSTS) solid solution at various compositions. We have elucidated that there are a series of "intrinsic" compositions where the acceptors and donors compensate each other and present a maximally bulk-insulating behavior. At such compositions, the resistivity can become as large as several Ohmcm at low temperature and one can infer the role of the surface-transport channel in the non-linear Hall effect. In particular, the composition of Bi1.5Sb0.5Te1.7Se1.3 achieves the lowest bulk carrier density and appears to be best suited for surface transport studies.

\section{Introduction}

The three-dimensional (3D) topological insulator (TI)
\cite{K1,MB,Roy,K2,Qi} possesses spin-momentum-locked gapless surface
states that are expected to host a variety of interesting quantum
phenomena.\cite{Kane,ZhangSC} While a number of materials have been
identified to be 3D TIs,
\cite{H1,Taskin,Matsuda,SCZ4,H5,Shen1,Sb2Te3,Sato,Kuroda,Shen2,BTS_Hasan}
most of the known TI materials are poor insulators in the bulk, and
finding ways to achieve a bulk-insulating state is an important current
theme. \cite{Ong2010,Fisher_np,checkelsky,Butch,Analytis,Eto,RenBi2Se3}
Recently, a large bulk resistivity together with clear quantum
oscillations from the surface state was observed in a ternary
tetradymite TI material Bi$_{2}$Te$_{2}$Se (BTS).\cite{Ren,OngBTS} In
this material, the chalcogens (Te and Se) are separated into different
lattice sites, forming the ordered Te-Bi-Se-Bi-Te quintuple layers. This
ordering provides the chemical environment suitable for reducing defect
formations.\cite{Ren} As a result, the chalcogen-ordered tetradymite TI
is a promising material for approaching the intrinsic
topological-insulator regime where the bulk carriers are negligible.
Since the residual bulk carrier density in BTS was found to be of the
order of 10$^{17}$ cm$^{-3}$,\cite{Ren} it is desirable to find an
appropriated route to further improve the bulk-insulating properties of
the chalcogen-ordered tetradymite TI material.

In this respect, the tetradymite solid solution
Bi$_{2-x}$Sb$_{x}$Te$_{3-y}$Se$_{y}$ (BSTS) is interesting, because it
has been known that some special combinations of $x$ and $y$ in this
solid-solution system yield very low conductivity. \cite{Teramoto}
Except for a narrow composition region close to Sb$_{2}$Se$_{3}$, BSTS
takes the same rhombohedral structure as its three end members
Bi$_{2}$Te$_{3}$, Bi$_{2}$Se$_{3}$, and Sb$_{2}$Te$_{3}$, all are known
to be TIs.\cite{SCZ4,H5,Shen1,Sb2Te3} Hence, BSTS is naturally expected
to be a TI as long as its structure is rhombohedral. Note that the BTS
compound, where a perfect chalcogen ordering is presumably achieved, can
be regarded as a member of this family ($x$ = 0, $y$ = 1).

Originally, the BSTS solid solution attracted attention because of its
promising thermoelectric properties for near room-temperature
applications.\cite{BSTSthermoelectric} Decades of efforts were devoted
to optimizing the thermoelectric performance through tuning the
composition and/or doping in the degenerate regime, resulting in a
dimensionless figure of merit $ZT$ (= $S^{2}T/\rho\kappa$, where $S$ is
the thermopower, $\rho$ is the electrical resistivity, and $\kappa$ is
the thermal conductivity) close to 1. By contrast, nearly no effort was
made to obtain insulating behavior in this family; nevertheless, because
two prevailing types of charged defects that exist in BSTS [(Bi,Sb)/Te
anti-site defects and the Se vacancy defects] introduce carriers of
opposite signs, a careful tuning of $x$ and $y$ would, in principle,
substantially cancel the bulk carriers and allow one to maximize the
bulk insulating properties. In fact, based on a systematic study of
polycrystalline BSTS samples at room temperature, Teramoto {\it et al.}
inferred \cite{Teramoto} that a series of such ``intrinsic" compositions
exist, and that the values of $x$ and $y$ for such compositions are
linearly coupled. Unfortunately, the temperature dependence of the
resistivity was not measured in their experiment, so it was not clear to
what extent an insulating state was actually realized.

In the present work, we performed a systematic study of the transport
properties of the BSTS solid solution for a wide range of compositions
and temperature, with the aim of maximizing the insulating property. It
was found that the compositions suggested by Teramoto {\it et al.} do
not exactly correspond to the optimal compositions for insulating
behavior. Instead, we determined a series of optimized compositions,
where the relationship between $x$ and $y$ is obviously non-linear. The
BSTS crystals at the optimized compositions with $0 \le x \le 1$ were
found to present a large bulk resistivity exceeding 1 $\Omega$cm at low
temperature, and their transport properties at high temperature signify
the existence of a small activation gap. This result gives evidence for
the existence of a series of BSTS solid solutions where the electron and
hole carriers are nearly compensated. In particular, it appears that at
$(x,y) = (0.5,1.3)$ (Bi$_{1.5}$Sb$_{0.5}$Te$_{1.7}$Se$_{1.3}$) the
compensation is maximally realized. Although the chances of observing
the Shubnikov-de Haas (SdH) oscillations in BSTS samples are not very
high, one can use the
non-linear Hall effect which is always observed at low temperature
as a tool to infer the role of the surface-transport channel.

\section{Experimental Details}

The single crystals of Bi$_{2-x}$Sb$_{x}$Te$_{3-y}$Se$_{y}$ were grown
by melting stoichiometric amounts of high purity elements [Bi, Sb, and Te
were 6N (99.9999\%), while Se was 5N (99.999\%)] in sealed evacuated
quartz tubes at 850 $^{\circ}$C for 48 h with intermittent shaking to
ensure a homogeneity of the melt, followed by cooling slowly to 550
$^{\circ}$C and then annealing at that temperature for 4 d. The
resulting crystals have a typical domain size of up to several
centimeters and are easily cleaved along the (111) plane to reveal a
shiny surface. The crystal structure of each sample was investigated by
the x-ray diffraction (XRD) analysis with the Cu $K\alpha$ emission,
which was performed on powders
obtained by crushing the crystals.
Lattice parameters were refined by a least-squares fitting to the XRD
data with the consideration of the zero shifts. All the samples used for
transport measurements were confirmed to be single domain by using the
x-ray Laue analysis, and they were cut into thin bar-shaped specimens with the
typical thickness of 100 $\mu$m. The
in-plane resistivity $\rho_{xx}$ and the Hall resistivity $\rho_{yx}$ were
measured by using the standard six-probe method
in a Quantum Design Physical Properties Measurement System
(PPMS-9) down to 1.8 K, shortly after the electrical contacts were
prepared by using room-temperature-cured silver paste.

\begin{figure}
\includegraphics*[width=8.5cm]{Fig1.eps}
\caption{(Color online)
(a,b) Temperature dependences of $\rho_{xx}$ for BSTS samples with
fixed $x$ and different $y$, showing how the compositions were optimized
for the insulating behavior; panel (a) is for $x$ = 0
(Bi$_{2}$Te$_{3-y}$Se$_{y}$) and panel (b) is for $x$ = 1
(BiSbTe$_{3-y}$Se$_{y}$). (c) $\rho_{xx}(T)$ data used for optimizing
the composition along the structural phase boundary [line A-B in panel
(d)]. (d) Composition-structure diagram of the
Bi$_{2-x}$Sb$_{x}$Te$_{3-y}$Se$_{y}$ system. The circles denote the
``intrinsic" compositions determined in the present work, while the
dashed line denotes those suggested in Ref. \onlinecite{Teramoto}.
This diagram was determined by first fixing the Sb content $x$ and
optimizing the Se content $y$ for that $x$; the possible error
in the optimized $y$ value for a given $x$ is the step size in the
optimization process and is represented by the symbol size.
}
\label{fig1}
\end{figure}

\section{Intrinsic compositions}

Figures 1(a)-(c) present how the compositions of the solid solution were
optimized for the insulating behavior. Initially, we synthesized and
characterized samples for the ``intrinsic" compositions suggested in
Ref. \onlinecite{Teramoto}. However, it turned out that, except for the
$(x,y) = (0.5,1.3)$ case, all those samples were only poorly insulating
or even metallic, with a nearly $T$-independent Hall coefficient
signifying the existence of electron carriers with the density of
10$^{18}$--10$^{19}$ cm$^{-3}$, which indicated that there are too much
Se vacancies that are not sufficiently compensated by the (Bi,Sb)/Te
anti-site defects. Therefore, we tried to optimize the composition by
increasing the Se content $y$ while fixing the Sb content $x$. The
examples for $x$ = 0 and 1 are shown in Figs. 1(a) and (b). We have also
performed similar optimization along the structural phase boundary [line
A-B in Fig. 1(d)], in which one must simultaneously vary the values of
$x$ and $y$. As shown in Fig. 1(c), the composition $(x,y) = (1.5,2.4)$
suggested in Ref. \onlinecite{Teramoto} yielded only metallic samples;
moving to $(x,y) = (1.4,2.44)$ was not sufficient, and finally at $(x,y)
= (1.25,2.5)$ we found an insulating behavior.

The summary of the
optimized compositions are shown in the composition-structure diagram
[Fig. 1(d)], together with the linear ``intrinsic" composition line
suggested in Ref. \onlinecite{Teramoto}. The possible errors in our
experiment, which
mostly come from the finite step size in the optimization process, are
represented by the symbol size. Obviously, the relationship between $x$
and $y$ in the true ``intrinsic" compositions is not linear but shows an
upward curvature in this diagram. It should be noted that Teramoto {\it
et al.} used polycrystalline samples and only measured the conductivity
at room temperature;\cite{Teramoto} it is therefore not surprising that
the present result does not agree with their conclusion.

\begin{figure}
\includegraphics*[width=8.5cm]{Fig2.eps}
\caption{(Color online)
(a) Power XRD patterns for the series of BSTS samples at optimized
compositions. The pattern for Bi$_{2}$Te$_{3}$ is also shown for
comparison. All the diffraction peaks can be indexed based on the
rhombohedral structure with the $R$$\bar{3}$$m$ space group.
(b) Enlarged view of the data near the (108) peak. Arrows mark the (107)
and (00$\underline{12}$) peaks related to the ordering of the chalcogen
layers.
}
\label{fig2}
\end{figure}

\begin{table*}[btp]
\caption{Important parameters obtained for the opitimized compositions.
$\Delta$ and $\Delta^{\ast}$ are the thermal activation energies
determined from the temperature dependences of $\rho_{xx}$ and $R_{\rm
H}$, respectively. The effective acceptor concentration $N_{\rm A}^{\rm
eff}$ is estimated from the relation $R_{\rm H}^{-1} \approx e
\sqrt{N_{\rm A}^{\rm eff}N_{\rm V}} \exp(-\Delta^{\ast}/k_{\rm B}T)$,
where $N_{\rm V}$ = 5.2$\times$10$^{18}$ cm$^{-3}$ (Ref.
\onlinecite{Ren}) was assumed. Note that, among the samples with the
same composition, $\Delta$ and $\Delta^{\ast}$ vary by $\sim$10\% and $N_{\rm
A}^{\rm eff}$ could vary by a factor of three, probably due to different
levels of defect concentrations.
}
\label{kopelTabFactors}\centering \vspace{5mm}
\begin{tabular}{cccccccccc}
\hline\hline
\\
composition& \ $a$ & \ $c$ & $\rho_{xx}^{\rm 300 K}$ & \ \   $\rho_{xx}^{\rm 1.8 K}$  & \ \  $R_{\rm H}^{\rm 300 K}$ & \ \ $R_{\rm H}^{\rm 1.8 K}$ & \ \ $\Delta$ \ & \ \ $\Delta^{\ast}$\ & $N_{\rm A}^{\rm eff}$\\
& \ \ (\AA)& \ \ (\AA)& \ \ (m$\Omega$cm) & \ \ ($\Omega$cm)   & (cm$^{3}$/C) & (cm$^{3}$/C) & \ \ \ (meV) \ \ \ & (meV) & \ \ (cm$^{-3}$) \ \ \\\hline
Bi$_{2}$Te$_{1.95}$Se$_{1.05}$ &\ $4.28$&\ \ $29.86$&\ $14$& $1.1$ & $2.6$ & $-200$ & $22$  &\ $33$ & \ \ \  9$\times$10$^{18}$ \ \ \\
Bi$_{1.75}$Sb$_{0.25}$Te$_{1.85}$Se$_{1.15}$ &\ $4.26$&\ \ $29.84$&\ $25$& $2.1$ & $2.3$ & $-610$ & $43$ &\  $60$ & \ \ \  5$\times$10$^{19}$ \ \ \\
Bi$_{1.5}$Sb$_{0.5}$Te$_{1.7}$Se$_{1.3}$&\ $4.24$&\ \ $29.83$&\ $140$& $4.5$ & $2.7$ & $-910$ & $53$  &\  $65$ & \ \ \ 6$\times$10$^{19}$ \ \ \\
Bi$_{1.25}$Sb$_{0.75}$Te$_{1.3}$Se$_{1.7}$&\ $4.20$&\ \ $29.58$&\ $44$& $2.2$ & $2.7$ & $-370$ & $38$ & \  $48$ & \ \ \  2$\times$10$^{19}$ \ \ \\
BiSbTeSe$_{2}$&\ $4.16$&\ \ $29.41$&\ $77$& $5.5$ & $2.4$ & \ $802$ & $30$ &\  $22$ & \ \ \   1$\times$10$^{18}$ \ \ \\
Bi$_{0.75}$Sb$_{1.25}$Te$_{0.5}$Se$_{2.5}$&\ $4.12$&\ \ $29.16$&\ $25$& $0.38$ & $-10.6$ &\ $207$ & \ --- & \ --- & \  --- \ \ \\
\hline\hline
\end{tabular}
\end{table*}

\section{Crystal structure}

Figure 2(a) shows the powder XRD patterns for the series of BSTS solid
solutions at the optimized compositions, together with the
Bi$_{2}$Te$_{3}$ data which is shown for comparison. The patterns for
all the samples are essentially the same and can be well indexed with
the rhombohedral structure (space group $R\bar{3}m$), confirming that
the solid solutions maintain the same crystal structure as their binary
end members Bi$_{2}$Te$_{3}$, Bi$_{2}$Se$_{3}$, and Sb$_{2}$Te$_{3}$. The
refined lattice parameters are summarized in Table I. As the system
moves toward Sb$_{2}$Se$_{3}$, both the $a$ and $c$ lattice parameters tend to
decease, which is reasonable because the ionic radius of Sb (Se) is
smaller that that of Bi (Te).

It is important to note that the (107) and (00$\underline{12}$) peaks,
both of which are characteristic of the compounds with the BTS-type
chalcogen ordering, are present in all the BSTS samples, as can seen in
the magnified plot [Fig. 2(b)]. This indicates that the ordering of the
chalcogen layers is preserved to some extent despite a large change in
stoichiometry. To understand this observation, it is useful to recall
the structure of the tetradymite, which is composed of stacked A$^{\rm
V}_{2}$B$^{\rm VI}_{3}$ (A$^{\rm V}$ = Bi, Sb; B$^{\rm VI}$ = Te, Se)
quintuple layers. Within the quintuple layer, the atoms are arranged in
the sequence of B$^{\rm VI}(1)-$A$^{\rm V}-$B$^{\rm VI}(2)-$A$^{\rm
V}-$B$^{\rm VI}(1)$, where B$^{\rm VI}$(1) and B$^{\rm VI}$(2) are two
inequivalent crystallographic sites. Because Se has a larger
electronegativity than Te, the Se atoms preferentially occupy the
B$^{\rm VI}$(2) site and the remaining $(y-1)\rm{Se}+(3-y){\rm Te}$
atoms are distributed randomly in the B$^{\rm VI}$(1) site when $y$ is
larger than 1.\cite{BSTSordering} Such an asymmetric arrangement of the
chalcogen layers bears similarity to that in BTS and accounts for the
XRD results.

\begin{figure}\includegraphics*[width=7.5cm]{Fig3.eps}
\caption{(Color online)
(a) Temperature dependences of $\rho_{xx}$ for the series of BSTS
samples at optimized compositions. Note that the vertical axis is in the
logarithmic scale with base 10.
(b) and (c) are the Arrhenius plot [$\log_{10} \rho_{xx}$ vs $1/T$] and
the 3D-VRH plot [$\log_{10} \rho_{xx}$ vs $T^{-1/4}$] of the $\rho_{xx}(T)$
data, respectively. Dashed lines represent linear fittings to the regions
where the activation and the VRH behaviors can be recognized.
}
\label{fig3}
\end{figure}

\section{Resistivity}

Figure 3(a) shows the typical temperature dependences of $\rho_{xx}$ for
the optimized compositions. It should be noted that the $\rho_{xx}$
value was found to be sample dependent and could vary by a factor of
three within the same composition, probably due to different levels of
defect concentrations. Nevertheless, the activated behavior was
essentially reproducible within the same batch and the variation in
terms of the activation energy was about 10\%. The magnitude of
$\rho_{xx}$ at room temperature in Fig. 3(a) ranges from 25 to 140 m$\Omega$cm, which
is generally larger than that found in BTS.\cite{Ren} Except for the
$(x,y) = (1.25,2.5)$ composition which has the largest Se content, the
overall temperature dependence of $\rho_{xx}$ is similar and can be
divided into three regimes:

(i) {\it Activated regime:}
In the temperature range above $\sim$100 K, the $\rho_{xx}(T)$ data can be
fitted with the Arrhenius law
\begin{equation}
\rho_{xx} \sim \exp(\Delta/k_{\rm B}T),
\end{equation}
where $\Delta$ is the activation energy and $k_{\rm B}$ is the Boltzmann
constant. In Fig. 3(b), we show the Arrhenius plot of the data together
with linear fittings to obtain $\Delta$. The $\Delta$ values are summarized in
Table I, and they vary from 22 to 53 meV; however, since the
temperature range of this activated behavior is not very wide, the
obtained $\Delta$ should not be taken too literally.

(ii) {\it Variable-range hopping regime:}
Below the temperature range of the activated behavior mentioned above,
the $\rho_{xx}(T)$ appears to be better described by the 3D
variable-range hopping (VRH) behavior,
\begin{equation}
\rho_{xx} \sim \rm exp[(\it T/T_{\rm 0})^{\rm -1/4}],
\end{equation}
where $T_{\rm 0}$ is a constant which depends on the density of states
at the Fermi level $E_{\rm F}$. For example, in the data for
Bi$_{2}$Te$_{1.95}$Se$_{1.05}$ (marked by square in Fig. 3), the VRH
behavior holds for 60 -- 140 K, while the activated behavior holds for
110 -- 300 K. However, it should be noted that the temperature range
where this VRH behavior appears to hold can have a significant overlap
with the activated temperature range. For example, in the case of
Bi$_{1.25}$Sb$_{0.75}$Te$_{1.3}$Se$_{1.7}$ (marked by diamond in Fig. 3)
where the distinction is the most ambiguous, the activation behavior and
the VRH behavior appear to hold in similar ranges, 85 -- 140 K and 90 --
170 K, respectively. Hence, the distinction between the two transport
mechanisms can be a subtle issue, and it probably depends on the level
of disorder in the sample.

(iii) {\it Saturation regime:}
At low temperature, $\rho_{xx}$ tends to saturate, rather than to
diverge as expected for intrinsic semiconductors, implying the existence
of some extended states at $E_{\rm F}$ in the zero-temperature limit. In
this regime, the magnetic-field dependence of the Hall resistivity
$\rho_{yx}$ is generally non-linear (as will be described in detail
later), which points to the existence of two or more transport channels.
In the BTS compound, it was elucidated \cite{Ren} that the topological
surface state and a degenerate bulk impurity band both contribute to the
low-temperature saturated resistivity. In addition, our recent study of
the Bi$_{1.5}$Sb$_{0.5}$Te$_{1.7}$Se$_{1.3}$ compound has identified
\cite{BSTStaskin} the third contribution of the accumulation layer (which is
caused by the surface band bending and is topologically trivial) in
samples where the Hall coefficient is positive at low temperature.

\begin{figure}\includegraphics*[width=8.5cm]{Fig4.eps}
\caption{(Color online)
(a) Temperature dependences of the low-field Hall coefficient $R_{\rm
H}$ for the series of BSTS samples at optimized compositions. Inset
shows an enlarged view of the data between 150 and 300 K. (b) Arrhenius
plot of $R_{\rm H}(T)$ at high temperature for the series of samples
except Bi$_{0.75}$Sb$_{1.25}$Te$_{0.5}$Se$_{2.5}$ where the activation
behavior was not clearly observed; the data are shifted vertically for
clarity. Dashed lines are the Arrhenius-law fittings to extract the
activation energy $\Delta^*$. (c) The value of $R_{\rm H}$ at 1.8 K
plotted as a function of the Se content $y$. (d) Magnetic-field
dependence of $\rho_{yx}$ for the
Bi$_{1.5}$Sb$_{0.5}$Te$_{1.7}$Se$_{1.3}$ sample at 1.8 K; solid line is
a two-band-model fitting (Ref. \onlinecite{Ren}) to the data. The
obtained fitting parameters give the surface conductance of
1.4$\times$10$^{-4}$ $\Omega^{-1}$ and the bulk conductivity of 0.21
$\Omega^{-1}$cm$^{-1}$; since the measured sample was 120 $\mu$m thick,
the surface contribution was 5\% of the total conductance.
}
\label{fig4}
\end{figure}

\section{Hall coefficient}

To further characterize the transport properties, we have performed the
Hall measurements. Figure 4(a) shows the temperature dependences of the
low-field Hall coefficient $R_{\rm H}$, defined as $R_{\rm H} =
\rho_{yx}/B$ near $B$ = 0, for the same series of samples. Above
$\sim$150 K, $\rho_{yx}$ is always linear in $B$ so that $\rho_{yx}/B$
is magnetic-field independent, and the resulting
$R_{\rm H}$ is positive and shows a thermally-activation behavior in all
the BSTS samples except Bi$_{0.75}$Sb$_{1.25}$Te$_{0.5}$Se$_{2.5}$. The
positive and activated $R_{\rm H}(T)$ behavior indicates that the
dominant charge carriers are thermally-excited holes in the bulk valence
band. By contrast, the high-temperature $R_{\rm H}$ in
Bi$_{0.75}$Sb$_{1.25}$Te$_{0.5}$Se$_{2.5}$ is negative and only weakly
dependent on temperature, which indicates that the electron carriers
created by Se vacancies in this compound
are degenerate near room temperature. Thus, the
sign change in the high-temperature $R_{\rm H}$ at the largest Se
content $y$ in our series of samples reflects a change in the dominant
defects from the Bi(Sb)/Te anti-sites (acceptors) to the Se vacancies
(donors). Note that in those samples both acceptors and donors are
expected to exist, and the observed charge-carrier concentration is
likely to be determined by their competition.

From the Arrhenius plot of $R_{\rm H}(T)$ [Fig. 4(b)], one obtains the
effective acceptor concentration $N_{\rm A}^{\rm eff}$ together with the
effective activation energy $\Delta^{\ast}$, both are summarized in
Table I. It should be noted that, among the samples with the same
composition, the variation in $\Delta^{\ast}$ was within $\sim$10\%,
while $N_{\rm A}^{\rm eff}$ could vary up to a factor of three,
reflecting the variation in the resistivity behavior within the same
batch mentioned in Sec. V. One can see that the $\Delta^{\ast}$ values
are not much different from the $\Delta$ values derived from the
$\rho_{xx}(T)$ data for the same samples, and the difference is less
than 30\%. This small differences can probably be ascribed to the
temperature dependence of the mobility. Intriguingly, $N_{\rm A}^{\rm
eff}$ and $\Delta^{\ast}$ seem to be correlated; namely, larger $N_{\rm
A}^{\rm eff}$ is accompanied with larger $\Delta^{\ast}$. However, the
origin of this behavior is not clear at the moment.

At lower temperature below 100 K, $\rho_{yx}(B)$ is no longer a linear
function of $B$ and $R_{\rm H}$ becomes very much
dependent on composition. Figure 4(c) shows this variation in terms of
the $R_{\rm H}$ value at 1.8 K plotted vs $y$.\cite{note} The largest
$|R_{\rm H}|$ was observed in Bi$_{1.5}$Sb$_{0.5}$Te$_{1.7}$Se$_{1.3}$,
where $R_{\rm H}$ = $-910$ cm$^{3}$/C at 1.8 K. This value would naively
correspond to a very low carrier density of 7$\times$10$^{15}$
cm$^{-3}$; however, as we have demonstrated for BTS, \cite{Ren} such a
naive estimate based on the low-field $R_{\rm H}$ is not reliable when there
are multiple transport channels that cause $\rho_{yx}(B)$ to become non-linear.
Indeed, $\rho_{yx}(B)$ was found to be non-linear in
Bi$_{1.5}$Sb$_{0.5}$Te$_{1.7}$Se$_{1.3}$ [Fig. 4(d)], and an accurate
estimate of the bulk and surface carrier densities is difficult without
employing additional information from SdH
oscillations.\cite{Ren,BiSb} Nevertheless, by using the simple two-band
model to consider both the bulk and surface transport channels \cite{Ren}
(note that the accumulation layer \cite{BSTStaskin} is irrelevant here
since the slope of $\rho_{yx}(B)$ is negative),
one can make a reasonable fitting to the data [solid line in Fig. 4(d)],
which yields the bulk carrier density 1.8$\times$10$^{16}$ cm$^{-3}$,
the bulk mobility 73 cm$^2$/Vs, the
surface carrier density 1.5$\times$10$^{11}$ cm$^{-2}$, and the surface mobility
2900 cm$^2$/Vs. (In the fitting procedure, the parameters were constrained
by the measured $\rho_{xx}$ value in 0 T.) Based on this
fitting result one can estimate the contribution of the surface transport
to the total conductance to be $\sim$5\%, which is
reasonably large considering the thickness (120 $\mu$m)
of the measured sample.

\section{Discussions}

For the transport studies of the topological surface states, it is
desirable that their SdH oscillations are observed. In the present
series of BSTS samples, we did not observe clear SdH oscillations below
9 T. Most likely, whether the SdH oscillations can be observed depends
crucially on the homogeneity and the value of the surface carrier
density $n_{s}$,\cite{note_SdH} which may vary between samples and, even
in the same single crystal, between different cleaves. The chances of
observing the SdH oscillations were roughly 10\% in our BSTS samples. On
such lucky occasions, we were able to see both Dirac holes and electrons
on the surface of Bi$_{1.5}$Sb$_{0.5}$Te$_{1.7}$Se$_{1.3}$ samples, and
the result was reported in Ref. \onlinecite{BSTStaskin}. It should be
emphasized, however, that even though the SdH oscillations are not
always observed, one can achieve a surface-dominated transport by making
sufficiently thin samples of BSTS.\cite{BSTStaskin}

As we have already discussed in Sec. VI, the low-field $R_{\rm H}$ value
in BSTS does not simply reflect the bulk carrier density, but
it is also influenced by the contribution of the surface carriers which
presumably have a higher mobility than the bulk carriers. In view of
this situation, the non-trivial composition dependence of $R_{\rm H}$
observed at 1.8 K [Fig. 4(c)] can be interpreted in two ways: One
possibility is that it may signify the sign change of the surface
carriers as the Se concentration $y$ is increased. This is possible
because the surface band structure of BTS is similar \cite{BTS_Hasan} to that of
Bi$_2$Te$_3$ where the Dirac point is located below the top of the
valence band,\cite{Shen1} whereas with increasing $y$ the surface band structure is
expected to approach that of Bi$_2$Se$_3$ where the Dirac point is
isolated in the bulk gap;\cite{H5} therefore, if the chemical potential is pinned
to the impurity band located just above the bulk valence band,\cite{Ren}
the nature of the surface carriers could change from Dirac electrons to
Dirac holes. The other possibility is that the change in $R_{\rm H}$ is
a reflection of the change in the nature of the degenerate bulk carriers
in the impurity band. This is also possible because at low $y$ the
chemical potential is likely to be located below the center of the
acceptor impurity band, whereas with increasing $y$ the increasing
amount of donors (due to Se vacancies) would cause the acceptor impurity
band to be gradually filled and move the chemical potential to above the
center of the impurity band. To further address this issue, systematic
studies employing the SdH oscillations would be necessary.

\section{Conclusion}

In this work, we have elucidated in the Bi$_{2-x}$Sb$_{x}$Te$_{3-y}$Se$_{y}$
(BSTS) solid solution the existence of the ``intrinsic"
compositions where the acceptors due to the (Bi,Sb)/Te anti-site defects
and the donors due to the Se vacancy defects compensate each other and
realize a maximally bulk-insulating state. The powder XRD patterns
suggest that at those compositions optimized for the insulating
behavior, the crystal structure has an ordering of the chalcogen layers
in which the Se atoms preferentially occupy the middle of the quintuple
layer and the remaining Se and Te atoms randomly occupy the outer-most
layers. Except for Bi$_{0.75}$Sb$_{1.25}$Te$_{0.5}$Se$_{2.5}$ which is
close to the structural instability, all the BSTS samples at the
optimized compositions show large $\rho_{xx}$ values exceeding 1 $\Omega$cm at
low temperature, together with an activated behavior at high temperature
signifying the existence of an activation gap for the bulk carriers. The
$B$ dependence of $\rho_{yx}$ at low temperature points to the role of
the surface transport channel, and the non-trivial composition
dependence of the low-field $R_{\rm H}$ reflects either the change in
the surface band structure or the change in the bulk carriers in the
impurity band. The $|R_{\rm H}|$ value at 1.8 K was found to be the
largest in Bi$_{1.5}$Sb$_{0.5}$Te$_{1.7}$Se$_{1.3}$ and this
composition appears to have achieved the lowest bulk carrier density.

\begin{acknowledgments}
This work was supported by JSPS (NEXT Program), MEXT (Innovative Area
``Topological Quantum Phenomena" KAKENHI 22103004), and AFOSR (AOARD
10-4103).
\end{acknowledgments}


Low energy electron scattering from DNA and RNA bases: shape resonances and radiation damage

Abstract: Calculations are carried out to determine elastic scattering cross sections and resonance energies for low energy electron impact on uracil and on each of the DNA bases (thymine, cytosine, adenine, guanine), for isolated molecules in their equilibrium geometry. Our calculations are compared with available theory and experiment. We also attempt to correlate this information with experimental dissociation patterns through an analysis of the temporary anion structures that are formed by electron capture in shape resonances.

\section{Introduction}
Reactions induced by electrons  drive nearly all the important chemical
processes in radiation chemistry,
plasma etching in semiconductors, stability of waste repositories, and are also
fundamental in the dynamics of the atmosphere and interstellar clouds, with
processes such as dissociative recombination and electron attachment.

In recent years, an
increasing importance has been recognized to these processes in biological
environments, especially in relation to radiation damage to nucleic acids (DNA
and RNA). These processes consist in the interaction of ionizing radiation
(like  $\alpha$, $\beta$ and $\gamma$-rays) with living tissue, generating
possibly mutagenic and carcinogenic byproducts, through a wide variety of
ionization, excitation and energy transfer processes, that can interest many
molecular species in the complex cell environment.

The important work of Sanche and coworkers
\cite{Sanche:DNA,Sanche:NIMP03,Sanche_review:MSR02} has shown that
damage to nucleic acids from ionizing radiation \cite{Mozejko_Sanche:REB03} (single and double strand
breaks in particular) can be generated through a mechanism involving low
energy electron attachment to the nucleic acid and subsequent bond breaking due to
energy transfer to a vibrational mode of the
temporary anion formed in the electron capture
step. These low-energy secondary electrons are generated by electron-impact ionization
caused by high energy electrons, originally produced directly by the ionizing radiation. In
the electron-impact ionization process, the scattered electron loses part of
its kinetic energy, while another electron is ejected, with energy much lower
than the first one.

In the past few years many studies have been devoted to understanding the
mechanism for the action of the low-energy electrons and their capability to
cause strand breaks.
\cite{Barrios:JPCB02,Schaefer:JACS05,Burrow:PRL04,Sanche_Burrow:PRL04,Burrow:JPCA98} A first general feature on
which there is wide agreement is that the electron capture is mainly due to the
DNA and RNA bases.
These molecules have extended aromatic systems, therefore there is a wide range
of low-lying unoccupied $\pi^*$ orbitals where an electron can be captured,
giving rise to a shape resonance, a temporary anion, in the range of energies
between 0 and 15 eV, where the experiments have found signatures of
electron-induced damage to nucleic acids.

The simplest of these bases are thymine, cytosine, uracil (pyrimidines,
monocyclic) and adenine and guanine (purines, bicyclic and generally larger than
pyrimidines). Their structures are shown in Fig. \ref{molec:structure}.
In this paper we will present theoretical predictions of cross sections for elastic electron
scattering from these large molecules. Determination of the location, width,
and electronic structure of
resonances for a  single target molecule is an important step towards
understanding and possibly modeling the complex dynamics of
DNA, which consists of multiple components. Specifically, besides the bases,
there are also the sugar
backbone, the phosphates, and also the solvation water,\cite{DNA:book} that
probably plays
a major role in stabilizing the temporary anions.
\cite{Sommerfeld:JPCA04,Gianturco:PRL04} No previous theoretical or experimental study of low-energy
electron scattering from all DNA bases is available for comparison (although a study at
intermediate energy has been carried out recently \cite{Mozejko_Sanche:REB03}), but our method has
proven its reliability in the study of small molecules \cite{Tonzani:JCP05} and
more extended systems like C$_{60}$, SF$_{6}$ and XeF$_6$.
\cite{Tonzani:unpublished}

Much experimental work also has been carried out on dissociative electron
attachment from DNA
bases,\cite{Sanche_Illenberger:JCP00,Illenberger_adenine:CPL03,Sanche_Burrow:PRL04} to understand what fragments are
generated.
We will discuss the possible connections with measured
dissociation branching ratios
that we can infer from the examination of the spatial shape and nodal surfaces
of the resonant wavefunctions.

\section{Theory}
\label{sec:Theory}
A detailed description of our method is available in Ref.
\onlinecite{Tonzani:JCP05}. For this reason we will only review here the main points and
the changes we have implemented since that work, notably
a new polarization-correlation potential \cite{Lee_Yang_Parr:PRB88} which
permits enhanced predictive
capabilities.

The interaction between the $N$ electrons in a molecule and the scattered
electron is a many body problem that can be recast, \cite{Morr_Coll:PRA78} using the so called
static exchange approximation, into a one body problem for the continuum
electron with a nonlocal potential: \cite{Tonzani:JCP05}

\begin{equation}
\label{1-body:eqn}
(-\frac{1}{2}\nabla^{2}+V_{s}-E)\phi_{0}(\vec{r})= \sum_{i,j}c_{i}c_{j}\sum_{k=1}^{N}
\phi_{ki}(\vec{r})\int{d\vec{r'}\frac{\phi^{*}_{kj}(\vec{r'})
\phi_{0}(\vec{r'})}{\mid\vec{r}
-\vec{r'}\mid}}
\end{equation}
here $V_{s}$ is the electrostatic potential, $\phi_{0}$ is the scattered
electron orbital, while the other orbitals refer to target electrons, and the
$c_{i}$ are configuration interaction (CI) coefficients.
In this approximation only one state for the target is considered (the ground
state), whereby it is only suitable to describe electronically-elastic processes. The
nonlocal interaction consists of three main pieces: the direct electrostatic
contribution, the exchange term and the polarization-correlation potential. Of
these three, only the first is a local potential.

To describe electron scattering from a general, possibly very complicated
molecule, we use the R-matrix method, \cite{Greene:rev96} which partitions
space into two regions: an internal region within which all the short-range physics is confined
and an outer region where only long-range interactions (like Coulomb or dipole
potentials) are important. Our calculation begins from a variational principle
\cite{Greene:rev96} for the logarithmic
derivative of the wave function at the boundary between the two regions

\begin{equation}
\label{log:der}
{b\equiv - \frac{\partial{\log {(r\Psi)}}}{\partial r} = 2 \frac
{\int_V {\Psi^{*}(E-\hat{H} -\hat{L}) \Psi dV}}{\int_V{\Psi^{*}
\delta(r-r_0)\Psi dV}}}
\end{equation}
where $\hat{L}$ is the Bloch operator, \cite{Tonzani:JCP05} and $r_{o}$ is the
boundary between the internal and external regions.
It is possible, after expanding the internal region wavefunction in a
suitable basis set, to recast the solution of Eq. \ref{log:der}
as an eigenvalue problem:

\begin{equation}
\label{eigenvalue}
\underline{\Gamma}\vec{C}=({E-\underline{H}-\underline{L}}) \vec{C} =
\underline{\Lambda} \vec{C} b.
\end{equation}

The external region is then treated  matching the solution of Eq.
\ref{eigenvalue} to the exact wavefunctions for the long-range tail of the
molecular potential. We show in Sec. \ref{sec:Dipole} how the contribution
from a long range dipole field can be included
in our method.
The basis set we use for the internal region of the $R$-matrix is a product of finite
element cubic polynomials in all three dimensions, using a grid in spherical
coordinates.

\subsection{Local Density Approximation (LDA)}
\label{sec:LDA}

To simplify further the description of our system we have to deal with the
nonlocality inherently present in the potential. To do this we use a local
density approximation for the exchange potential, which reduces it to a
functional only of the local density:
\begin{equation}
\label{Pot:exch}
V_{ex}(\vec{r}) = -\frac{2}{\pi} k_{F} F(k_{F},E),
\end{equation}
where $k_{F}$ is the local Fermi momentum:
\begin{equation}
k_{F}(\vec{r})=(3 \pi ^{2} \rho(\vec{r}))^{1/3}
\end{equation}
and $F$ is a functional of the energy and the local
density $\rho(\vec{r})$ (through the local Fermi momentum). The  functional
form we use for $F$ is called the Hara
exchange. \cite{Hara:69}  It has been extensively employed in continuum state
calculations, and it is energy-dependent.  The local exchange approximation, widely used also in
density functional calculations, \cite{Parr_Yang:book} has proven itself to give qualitatively correct
results, \cite{Tonzani:JCP05,Morr_Coll:PRA78} while being sufficiently simple
to implement computationally that it permits an exploration of complex
molecular species.

\subsection{DFT Polarization potential}
\label{sec:DFT}
We have recently added to our computer code the capability to use a parameter free
correlation-polarization potential,\cite{Gianturco:PRA93,Colle_Salvetti:JCP83} based on density
functional theory (DFT) ideas. As shown in Ref. \onlinecite{Lane:rev80} the
polarization-correlation contribution is physically related to the distortion-relaxation
effect on the molecule generated by the incoming electron. This is  extremely important for an accurate
description of the scattering process. The long range part of this potential
is
a simple multipole expansion, of which we retain only the induced dipole
polarization terms:
\begin{equation}
\label{polar:potential}
V_{pol} = -\frac{1}{2 r^{4}}(\alpha_{0}+\alpha_{2} P_{2}(\cos{\theta}))
\end{equation}
where $\alpha_{0}$ and $\alpha_{2}$ are the totally symmetric and nontotally
symmetric components of the polarizability tensor, and are calculated $ab$
$initio$ using electronic structure codes.

In the volume where the electronic density of the target is not negligible,
this potential is nonlocal. The interaction can be approximated again as a
local potential, different forms of which have been suggested in the
literature.  The one
we use is based on DFT (specifically on the LYP potential of
Ref. \onlinecite{Lee_Yang_Parr:PRB88}) and it has yielded
reliable results in the work of Gianturco and coworkers. \cite{Gianturco:c60}
This form makes use of the electron density, its gradient and laplacian, which have
to be calculated for each target molecule. The short and long range potentials are
matched unambiguously at the innermost crossing point, whose radius is dependent on the
angles.

\subsection{Dipole physics}
\label{sec:Dipole}
Since the molecules we considered in this work have large electric dipole moments, there
is a need to consider the long range effect of the dipole field on the
scattered electron. Two possible options might be considered, either
extending the boundary of the R-matrix box far out to a region where the dipole
potential is very small, which would be extremely time-consuming for our
calculations, or matching to outer region functions adapted to the dipole interaction. We
choose this second route and, following the example of Clark,
\cite{Clark:PRA79} we define the matrix of the operator:

\begin{equation}
(l^{2}-2 D \cos{\theta}) \Omega_{N}=N(N+1)\Omega_{N}
\label{Clark:operator}
\end{equation}
where $l$ is the angular momentum operator, $\theta$ is the angle between the
incoming electron and the dipole direction, $D$ is the dipole moment, $N(N+1)$
and $\Omega_{N}$ are eigenvalues and eigenfunctions.
We expand
$\Omega_{N}$ in a basis of spherical harmonics to diagonalize the
system in Eq. \ref{Clark:operator}. The
order of the spherical Bessel functions that are matched in the outer region
will be now $N$ (not an integer, in general) rather than the usual orbital
angular momentum quantum number $l$. Since the dipole moments
of the molecules in question are very large,
 the dipole plus centrifugal potential becomes
attractive  for the first few channels which may thus have
a complex $N$. In such cases we define $N=-1/2+i\mu$ and the matching functions will become:\cite{Clark:PRA79}
\begin{equation}
\bar{j}_{N}(k r)= \sqrt{\frac{\pi}{2r} } \frac{1}{\sinh{\frac{1}{2}\pi \mu}} Im(J_{i
\mu}(kr))
\label{Clark:mod_Bessel}
\end{equation}
\begin{equation}
\bar{n}_{N}(k r)= -\sqrt{\frac{\pi}{2r} } \frac{1}{\cosh{\frac{1}{2}\pi \mu}} Re(J_{i
\mu}(kr))
\label{Clark:mod_Bessel2}
\end{equation}
where $J_{i\mu}$ is a cylindrical Bessel function. This allows
us to keep the functions in Eq. \ref{Clark:mod_Bessel} always real, and therefore have real
$K$-matrices.

It should be mentioned, however, that at extremely low energies
these functions oscillate rapidly in energy as $\sin(\mu \log{kr})$, giving rise to $K$-matrices that
are not smooth functions of energy. Defining the base pair as in Ref.
\onlinecite{Greene_Fano_Strinati:PRA79} solves the problem, but since we are not
interested in energies below about 0.5 eV in this study, the functions in Eqs.
\ref{Clark:mod_Bessel}-\ref{Clark:mod_Bessel2} will be sufficient.

The dipole plus centrifugal potential is attractive if the value of the dipole
moment is larger than a critical value ($D_{c}$=1.625 Debye for a nonrotating
dipole). In this case the dipole
interaction can bind the electron all by itself. In general, when rotation is included, the critical value of the dipole
moment to have a bound state is around\cite{Jordan:ANPC03} 2-2.5 D  and the number of
dipole-bound states is finite.
In the case of uracil, \cite{Ortiz:CPL99,Sommerfeld:JPCA04,Burrow:PRL04}
such a dipole-bound state exists at roughly 0.1 eV below the neutral ground
state energy, at the equilibrium geometry of the target molecule.

\subsection{Calculation details}
\label{sec:Details}
To calculate the target properties we have used the {\sc{GAUSSIAN 98}} program
suite,
at the Hartree-Fock (HF) level of theory. We have noticed in the past
\cite{Tonzani:JCP05} that CI calculations
are in this case much more expensive and make comparatively little difference in the
final cross sections. All of the molecules we treat here are spin singlets in
their ground state.
For the scattering calculations we have used an IBM Power 4 supercomputer, each
calculation taking about 6 wall clock hours on 16 processors working in
parallel. The size of the matrices
generated is about 180000 by 180000 and the direct solution of the linear system
requires about 10 minutes per energy point when distributed over 16 processors.
The matrices are very sparse (fewer
than 0.5\% nonzero elements), and we use a direct sparse factorization method to
solve the linear system. The convergence of the calculation is such that
incrementing the number of sectors by 30\% lowers the energy of the resonances
by a further 0.1 eV in uracil; since it is already quite cumbersome to
carry out these calculations we deemed this level of convergence as sufficient for the
purposes of this study.
The geometry of the molecules is chosen to be the
equilibrium target geometry,
optimized at the HF level with a 6-31G* basis set.

\section{Results}
\label{sec:Results}

To our knowledge there are no available experimental data or calculations of
low energy
electron scattering from the complete set of DNA bases.
A study of electron attachment has been presented in Ref. \onlinecite{Burrow:JPCA98} and
the resonance positions are clearly marked. Compared to
these results, our calculations show resonances shifted typically by about 2 eV higher in
energy, but the energy spacing of the resonances is comparable to what is observed in
the experiment.Moreover
the relative values of the widths of successive resonances resemble the
measured widths.
There is also a theoretical study
at intermediate energies, \cite{Mozejko_Sanche:REB03} and  calculations for
scattering from uracil; \cite{Gianturco:PRL04,Gianturco:uracil_JCP04} in
the following
we compare these results to ours.

We have already mentioned that the heterocyclic DNA bases have many low-lying
unoccupied orbitals, so it is not surprising that their elastic cross sections
for electron scattering exhibit  many shape resonances. These may be viewed as a
capture of the scattered electron into one of these antibonding orbitals to form
a short lived negative ion state.\cite{Dehmer:res_JCP81,Dehmer:res_ACS84}

Since all these molecules have, in their equilibrium configuration,
only one symmetry element - reflection through the molecular plane - we will characterize the resonances
as being of $\sigma$ type (no node in the plane) or $\pi$ type  (when they have instead a
node in the plane) rather than using the $A'$ and $A''$ labels as is customary for the $C_{s}$ group.

\subsection{Positions and widths of resonances}
\label{sec:Cross_sections}
A general comparison of partial  elastic cross sections for all five of these molecules
is shown in Fig. \ref{fig:total_cross_section}, while in the following we
give a more detailed description and compare with information available in the
literature.
Also, a plot of total time-delays (see also Sec. \ref{sec:Resonances} for
details)  is provided in Fig.
\ref{fig:deriv_eigenphase_sum} to show the resonances is more detail.

Since we are dealing with polar molecules, applying the fixed-nuclei
approximation as it stands makes the partial wave expansion of the forward scattering
amplitude divergent. Due to the long-range nature of the dipole
interaction, in fact, all partial waves would contribute to the scattering
process, causing an infinite scattering in the forward direction and therefore
infinite integral cross sections. There is a method, extensively discussed in the
literature, \cite{Gianturco:water_JCP98,Clark:PRA77} to deal with this problem by
means of a Born closure formula, which yields a finite integral cross section
once
molecular rotations are included. We will not
pursue this further, since existing
experiments are not likely to deal with such detailed rotational structures.
Therefore our
cross sections and time-delays include only up to $l_{max}=10$ and omit all higher
partial waves.  The correction would be proportional  to the
dipole moment and inversely proportional to the smallest rotational spacing. For the
DNA bases the dipole
moment is large, while the rotational spacing is
small.
Therefore the correction can be quite large
especially at very low energy. The correction would thus tend to mask the resonant
structures, which are the most interesting observables and which have been measured in
experiments.
All of the calculated cross sections grow rapidly when the incident electron
energy decreases below 1 eV, which is a
signature of the role played by the dipole field in pulling in the electron and
which is very common in electron scattering from polar
molecules. \cite{Tennyson_water:JPB02,Burrow:JPCA98}

A comparison o four resonance patterns with the electron transmission spectroscopy (ETS) data of Burrow and
coworkers \cite{Burrow:JPCA98,Burrow:PRL04} can be
found in Figs.
\ref{fig:comparison_uracil}-\ref{fig:comparison_guanine}, where the time-delay
data from our calculations has been rescaled by an overall constant and shifted
down in energy to
facilitate the comparison of energies, widths and spacing. All of the
resonances obtained in our calculations
are listed in Table \ref{tab:resonances}.

\begin{table}
\begin{tabular}{|l|c|c|c|} \hline
Molecule & Energy (eV) & Width (eV) & Partial wave \\ \hline
\emph{Uracil}   &2.16  &0.2  &3 ($50\%$)  \\
  &5.16  &0.6  &2 ($66 \%$)  \\
  &7.8  &0.9  &3 ($64 \%$)  \\ \hline

\emph{Thymine}   &2.4  &0.2  &3 ($53\%$)  \\
  &5.5  &0.6  &2 ($62 \%$)  \\
  &7.9  &1.0  &3 ($61 \%$)  \\ \hline

\emph{Cytosine}   &1.7  &0.5  &3 ($51\%$)  \\
  &4.3  &0.7  &2 ($68 \%$)  \\
  &8.1  &0.8  &3 ($63 \%$)  \\ \hline

\emph{Adenine}   &2.4  &0.2  &2 ($65\%$)  \\
  &3.2  &0.2  &2 ($62 \%$)  \\
  &4.4  &0.3  &3 ($51 \%$)  \\
  &9.0  &0.5  &5 ($53 \%$)  \\ \hline

\emph{Guanine}   &2.4  &0.2  &2 ($46\%$)  \\
  &3.8  &0.25  &2 ($44 \%$)  \\
  &4.8  &0.35  &4 ($38 \%$)  \\
  &8.9  &0.6  &5 ($33 \%$)  \\
  &12  &1.0  &4,5 (both $23 \%$)  \\ \hline

\end {tabular}
\newpage
\caption{Energies, widths and dominant partial waves of the resonances
discussed in the text.}
\label{tab:resonances}
\end{table}

\subsubsection{Uracil}
In the cross section of uracil we find 3 resonances, at 2.16 eV (of width 0.2
eV), at 5.16 (0.6 eV wide) and a very broad resonance at 7.8 eV.
The resonance at 2.16 eV is dominated by the $l=3$ partial wave (50\%) and has
contributions from $l=1$ (35\%) and $l=2$ (11\%). at 5.16 eV the main partial
wave is d (66\%), at 7.8 eV f-wave is the dominant contribution (64\%).

In the work of Gianturco $et$ $al.$
(see Ref. \onlinecite{Gianturco:uracil_JCP04})
three $\pi^*$ resonances are found at energies of 2.2, 3.5 and 6.5 eV.
The second and
third $\pi^*$ resonances from that work fall at lower energies than
ours, a somewhat surprising discrepancy since the theoretical models are very
similar.

The contribution of the dipole field at distances
larger than 12 Bohr is neglected in Ref. \onlinecite{Gianturco:uracil_JCP04}, but we
have noticed that this influences only the overall magnitude of the cross
sections (roughly an increase of 20\% at very low energy, that is reduced to about
5\% around 10eV), the dipole physics only weakly affects the resonance positions and widths.

Resonances are measured Ref. \onlinecite{Burrow:JPCA98} to occur at 0.3, 1.5 and
3.8 eV.
They are all assigned as $\pi$ resonances, \cite{Burrow:PRL04} so our results should be
shifted by about 2 eV down, whereas the spacing between the resonances is
larger than experiment. The relative resonance widths are similar to Ref.
\onlinecite{Burrow:PRL04}, in that the first resonance is very narrow, the
second broader and the third very broad, a comparison is shown in Fig.
\ref{fig:comparison_uracil}, where an integration of the experimental data has
been performed to show more clearly the resonance positions and widths.

\subsubsection{Cytosine}
For cytosine we find 3 main resonances,  a very
sharp one at 1.7 eV (width 0.5 eV), then at 4.3 eV (width 0.7 eV) and a third at 8.1
eV (width 0.8 eV). The dominant angular momentum character of the resonances is
the same as for the three corresponding resonances of uracil.
Comparing the resonance positions with the data of Ref.
\onlinecite{Burrow:JPCA98} we see the same general trend already observed with
uracil, of an overall shift higher than experiment of all resonances by about 2 eV. Interestingly, the
first two resonances are measured to occur at an energy lower than in uracil, a
trend that we  verify in our
calculations.

\subsubsection{Thymine}
The scattering cross section for thymine is  closely similar to
uracil,
which is not surprising in view of their close structural similarities, this
applies to
both the magnitude and the position of the resonances, which are
slightly shifted to higher energies. Specifically, we find resonances at
2.4 eV  (width 0.2 eV) at  5.5 eV (width 0.6 eV) and at 7.9 eV (width 1 eV).

\subsubsection{Adenine}
The electron scattering spectrum for adenine presents many resonances, due to the complexity
of the target structure, as expected. Also very interesting is the
fact that the cross section drops sharply at energies below 2 eV, a behavior
opposite to that found for
the other molecules, if we do not consider the dipole physics outside
the R-matrix box, whereas a zero-energy peak appears in the full calculation,
a possible sign of a dipole bound state right below threshold.

The first resonance occurs at
2.4 eV (width 0.2 eV), the second at 3.2 eV (sharp, width 0.2 eV), then another
centered at 4.4 eV  (0.3 eV wide), while at
9 eV we have a  broader resonance of width 0.5 eV.
The dominant partial wave of the first two resonances is $l=2$ (65\% and 62\%
respectively).
The third resonance is $l=3$ at 51\% and $l=4$ at 33\%
The resonance at 9 eV is dominantly $l=5$ (53\%) with an $l=3$ contribution
(22\%).

Compared to experiment we have a shift of all resonances roughly 1.5 eV higher,
as in guanine, in this case the spacings are correct (about 1
eV between the first three resonances, while the fourth falls too high in
energy and it is not measured in experiment). Also the experimental widths of the
first three resonances are very similar, as in our data. A comparison with the
data of Ref. \onlinecite{Burrow:JPCA98} is shown in Fig.
\ref{fig:comparison_adenine}.

\subsubsection{Guanine}
For guanine we find 4 resonances: at 2.4 eV (width 0.2 eV), at 3.8 eV (width 0.25eV),
a third at 4.8 eV (width 0.35 eV), then at 8.9 eV (width 0.6 eV) and a broad
resonance around 12 eV.
Each of the first three resonances has strong
contributions from d, f, and g-waves.
At 2.4 eV the contributions are 46\% for $l=2$  and 37\% for $l=3$, for the second
resonance $l=2$ is 44\% while $l=4$ is 32\%, the third is 38\% of $l=4$
character and 35\% of $l=3$.
The resonance at 8.9 eV is 33\% h-wave, 28\% f-wave and 20\% g-wave. At 12 eV
the composition is: $l=4$ and $l=5$  equally at 23\%, while $l=6$ contributes a
further 13\%.

Comparison to experimental data (see Fig. \ref{fig:comparison_guanine}) shows
again a shift of 1.5 eV overall, while the
resonance spacing is well reproduced, and the second and third resonances fall
at higher energies with respect to adenine, as in our calculations. Also the
widths seem close to experiment.

\subsection{Resonance molecular structures}
\label{sec:Resonances}
From the shapes and nodal structures of the resonant states it is
possible to attempt a discussion of the dissociation patterns observed
experimentally, if we consider the resonant states as being precursors for
dissociative states. Caution must be used, though, in drawing
conclusions from this analysis, because this involves a certain degree of
speculation.  In fact, to establish once and for all the dissociation patterns
of these complicated systems, scattering calculations at many different
geometries would
have to be carried out, and the nuclear dynamics should be included,
At present this is  computationally too expensive to contemplate.
The first two resonances observed for uracil are shown in
Figs. \ref{res:uracil1} and \ref{res:uracil2}. The quantity plotted is a projection on the molecular
plane of the eigenvector corresponding to
the maximum eigenvalue of the time-delay matrix \cite{Greene:rev96}
\begin{equation}
Q=i  S \frac{dS \dagger}{dE},
\end{equation}
where $S$ is the scattering matrix.
At the energy where the time delay
of the resonance is a maximum, this eigenvector constitutes the dominant contribution to the
resonant structure, since it corresponds to the partial wave  that experiences the
maximum time delay in the scattering process. For sufficiently narrow
resonances one eigenvalue is always dominant, making the resonance analysis
much easier.
The eigenvectors of the time-delay matrix are complex, so we adopt a phase
factor such that
the highest peak of the wavefunction is a purely real
number. We then find that  the resonance wavefunction  is real everywhere, to a good approximation
(the imaginary part is about $10^{-6}$ smaller than the value of the real part),
and we plot only the real part.
We analyze in detail only the cases of uracil and adenine, the other
pyrimidines being
very similar to the former and guanine to the latter.

The nodal patterns for uracil are very similar to the ones showed
in Ref. \onlinecite{Gianturco:uracil_JCP04}, which is not surprising since
the approximations made in that work are similar to ours, as already discussed,
therefore we show only the first two resonances. Incidentally, we
notice the close resemblance of these resonant wavefunctions to the
first virtual orbitals of uracil from a HF calculation performed with a small
basis set (6-31G*), see for example Fig. \ref{orbital:uracil2}.
In Ref. \onlinecite{Gianturco:uracil_JCP04} also
a very low $\sigma^*$
resonance is found at 0.012 eV. Our cross section grows
substantially at low energy. If we plot the eigenstate corresponding to the largest
eigenvalue of the time-delay matrix (as described in Sec. \ref{sec:Resonances}),
as in Fig. \ref{res:uracil1}, corresponding to this low energy range, it looks similar to Fig. 5 in Ref. \onlinecite{Gianturco:uracil_JCP04}, with the
main differences being that in our wavefunction the N$_{3}$-H bond has a node,
there is a large excess charge on N$_{3}$ and on the oxygen attached to C$_4$,
while another nodal surface cuts diagonally from C$_2$ to C$_5$. This resonance
anyway does not appear to be so relevant in the experimental
data,\cite{Burrow:PRL04} where mainly
the $\pi^*$ resonances are detected.

We can also see that there is accumulation of electronic density (the peaks of the
wavefunction) on the ring structure, and that many of the ring bonds have nodal
surfaces cutting through them, so capture in these resonant states can be
reasonably thought as leading to a fragmentation of the molecule in which the
aromatic ring is broken.
Experimental dissociation patterns are illustrated for Br-uracil in Ref.
\onlinecite{Sanche_Illenberger:JCP00}, where evidence for breaking of the ring
structure lies in the peaks at 1.6 and 3.5 eV produced by (OCN)$^-$ and other
fragments. These fragments can be generated by capture into shape resonances,
appearing in our calculations at 2.2, 5.2 and 7.8 eV respectively. In
particular there is a nodal surface in the 5.2 eV resonance that encloses the
C$_{4}$-N$_{3}$ bond, which could generate a CN$^{-}$ fragment.

Since our calculations do not take into account core-excited states or vibrations, our
results do not include
any Feshbach resonant structures. These appear to cause at
least some of the patterns observed in experiment, as in the case of
uracil,
\cite{Burrow:PRL04} and they will presumably constitute the dominant trapping pathways for
energies higher than 7 eV, where the number of electronic Feshbach resonances starts to
become very large. \cite{Tonzani:unpublished}

In the case of uracil, we looked carefully for a $\sigma^*$
resonance that might be similar to the state shown in Fig. 3 of Ref.
\onlinecite{Burrow:PRL04} around 3 eV at equilibrium geometry, a dissociative
state most likely responsible for N$_{1}$-H bond cleavage. The  Ref. \onlinecite{Burrow:PRL04}  calculation was
performed by scaling Hartree-Fock continuum orbital energies, so no information about
the width was provided.
Such a state, taking
into account an expected shift of 2-3 eV upward in our calculations, should
have appeared at
around 6-7 eV, and it was not found. This is probably due to the fact that this
resonance is extremely broad, since it is also not seen even in experiment.
\cite{Burrow:PRL04} Moreover in calculations carried out using complex absorbing
potentials, in connection with Green's function methods,
\cite{Santra:review,Santra_Feuerbacher:JCP04} for similar systems (like
benzene \cite{Santra_Feuerbacher:priv_comm}), analogous $\sigma$ resonances were
extremely hard to detect. They became narrower (around 1eV width at equilibrium) only
when the relevant hydrogen was
substituted with a heavy atom like chlorine; this was also demonstrated experimentally in the case of
Cl-uracil in Ref. \onlinecite{Burrow:PRL04}.

For adenine there is less experimental information available to compare. In Ref.
\onlinecite{Illenberger_adenine:CPL03} it is stated that the dominant breakup
channel for
low energy (0-4eV) electron attachment leads to hydrogen atom loss, and very
prominent resonant structures are present in the range 1 to 3 eV.  If we look at
the resonance wavefunction maps in Fig. \ref{res:adenine1}-\ref{res:adenine3} we can see that there is no significant buildup of
electronic density on any of the hydrogens, consistently with the fact that the
negative charge stays on the molecular frame, and therefore there is no H$^-$
formation.

The first few unoccupied molecular orbitals that can be obtained from a
Hartree-Fock calculation for adenine, as in the case of uracil, are
extremely similar in their nodal structures to our resonant wavefunctions,
so these shape resonances can be viewed quite reasonably as the trapping of the
scattered electron in a virtual orbital.

Most of the C-C and C-N bonds have nodal surfaces passing through them,
This might suggest that other channels that
involve the breakup of C-C and C-N bonds could also be available at these
energies, although
probably they are less important than the hydrogen loss products.

\section{Conclusions}
\label{sec:Conclusions}

We have presented results for electron scattering from DNA and RNA bases.  In
showing some of their resonant wavefunctions, we have attempted to link
the
molecular breakup patterns and products to the structure of the nodal surfaces of these
wavefunctions.
The results for cross sections and resonances show an overall shift of about
1.5-2
eV higher for all the resonances in our calculations, compared to experiment,
we believe that this shift
is due to the approximate nature of our model. Apart from this, though,
we seem to reproduce trends observed in experiment, with respect to the resonance
spacing, their widths and also in relative positions for different molecules,
which gives us guarded confidence in our results. We have presented the first
calculations of cross sections for all the main DNA
bases, and discussed the relationship of our results to experimental
data. Ample room exists for improvement in our model, and it will  be
desirable to eventually calculate resonant surfaces, and not just equilibrium
values, in order to characterize the dissociation processes.
Work is presently underway to meet some of these challenges.

\section*{Acknowledgments}
This work was supported in part by the Department of Energy, Office of Science, by
an allocation of NERSC supercomputing resources, and by the Keck Foundation
through computational resources.  We would like to thank P. Burrow, R.
Santra and S. Feuerbacher for useful discussions and for sharing their unpublished data.

Chemical Physics (physics.chem-ph); Biological Physics (physics.bio-ph)