Atomic and electronic structure of ideal and reconstructed $α$-Sn (111) surface

Abstract: We have carried out an ab-initio study of $\alpha$-Sn (111), with the aim of predicting and understanding its structure, reconstructions, and electronic states. We consider a variety of structural possibilities, and optimize them by moving atoms according to Hellmann-Feynman forces. Our results indicate that the unreconstructed surface is highly unstable, while a variety of reconstructions compete for the true ground state. Extrapolated trends from diamond to Si to Ge are well borne out, with a $2\times 1 \pi$-bonded chain reconstruction prevailing in the absence of adatoms, and a $c(4\times 2)$ or $(2\times 2)$ basic adatom-restatom unit reconstruction otherwise. Accompanying surface bucklings are in both cases larger than in Si and Ge, with consequently large ionic charge transfers predicted. Search for a $\beta$-Sn-like metallic state of the surface turned out to be inconclusive.

\section{Introduction}

Essentially all semiconductor surfaces are reconstructed.
As is well known, this can be traced
back to the strong covalency of their bulk band structure.
In fact, the uniqueness of covalent systems,
as opposed to, for example, regular metals,
is that bulk covalent bonding is very directional and relatively
inflexible. Consequently, it generally costs
too much energy to locally rearrange the electron wave
functions at the surface
(as required by the presence of broken bonds),
without some major lattice readjustments.

In the group-IV insulators and semiconductors,
known to crystallize in the diamond
structure, the best studied face by far is
the (111), where well documented results are
available for diamond, Si and Ge.
Both experiment and theory indicate that a variety of
different reconstruction mechanisms are realized.
A summary is presented in
Table \ref{trend}. One can see that all (111) surfaces possess a
$\pi$-bonded chain $2 \times 1$ reconstructed state.
As a true ground state,
however, $\pi$-bonded chains only prevail in diamond,
possibly reflecting the difficulty of obtaining well annealed
adatoms on this surface. On Si and Ge (111), the adatom
reconstructions, $(7\times 7)$ [Ref.\onlinecite{7x7}]
and $c(2\times 8)$ [Ref.\onlinecite{c2x8}] respectively,
have lower energy,
whereas the $2\times 1$ $\pi$-bonded chain reconstruction remains
well-defined, but energetically metastable.

In all cases:
diamond, Si and Ge (111), the metallic character of
the ideal, symmetrical $\pi$-bonded chain
reconstruction\cite{Pandey} is
removed by some accompanying distortion.
This distortion can consist either of a slight
dimerization of the chain, as is probably the
case in diamond\cite{Galli_c2x1},
or of a vertical buckling,
as in Si\cite{Northrup,Ancilotto_si2x1,LB}
and Ge \cite{Takeuchi_ge2x1}. Although experimental
buckling data for diamond and Ge (111) are not yet available,
{\em ab-initio} calculations
exist for these geometrical distortions.
The size of the predicted
chain bucklings exhibits an interesting
trend, namely it is zero in diamond\cite{Galli_c2x1},
about 0.4 \AA\ in silicon\cite{Ancilotto_si2x1}
(where experimental data\cite{LB} confirm this magnitude),
and 0.8 \AA\ in germanium \cite{Takeuchi_ge2x1}.
The absence of buckling
in carbon has been ascribed to the larger
intra-atomic Coulomb repulsion, which prevents the ionic
charge transfer implied by the buckling\cite{Galli_c2x1}.
The decrease of Coulomb repulsion with increasing atomic
number is consistent with the trend towards a larger buckling.

When adatoms are present, as in annealed Si and Ge (111),
then an adatom-rest atom reconstruction prevails.
Interestingly, the adatom reconstruction again
implies surface ionicity \cite{Meade_sige2x2},
with an electron charge transfer
between the adatom and the restatom.

Besides $\pi$-bonded chains and
adatom-restatom reconstructed states,
a third kind of state, namely the displacive
$2\times 1$ buckled reconstruction, originally proposed
by Haneman\cite{Haneman}, may also play a role. Although never
found to be stable experimentally, and never stable
theoretically either, it does make a brief appearance
as a metastable transition state
in the transformation path from
ideal $1\times 1$ to $2\times 1$ $\pi$-bonded chain,
in Si \cite{Ancilotto_si2x1} and Ge (111) \cite{Takeuchi_ge2x1},
as found by {\em ab-initio} molecular dynamics.
This does not seem to occur on C (111) \cite{Galli_c2x1},
probably again because the Haneman state is
ionic, and thus very costly in carbon.

Finally, the last entry in Table \ref{trend}
considers, as a fourth type of reconstruction,
the possible transformation of a thin surface layer from
semiconducting to metallic.
This possibility is suggested by the bulk
phase diagrams of Si, Ge and Sn,
where fully metallic phases completely
surround the semiconducting phases, under any combination of
either high pressure or temperature.
There is considerable evidence that surface metallization does in
fact play a relevant role
at high temperatures\cite{Takeuchi_metal}.
The finite temperature
behavior is however outside the scope of the present work.
Although this transformation (as predicted, for example,
in Ga\cite{Marco_gallio})
does not appear to prevail at T=0 K in Si
and Ge, it could still take place in $\alpha$-Sn,
which is closer to being metallic.

Throughout the literature, only the (100) surface of
$\alpha$-Sn appears to have been considered so far\cite{Yuan}.
This paper is devoted to what is therefore
a first study of the $\alpha$-Sn (111) surface.
In particular, since there are no experimental data available,
{\em ab-initio} calculations are required
to compare the various possible
reconstructions, and understand the trends relative to the other
semiconductors just described. By extrapolating
the trends of Table \ref{trend}
we are led to expect the following:\\
i) the $2\times 1$ $\pi$-bonded chain
reconstruction should be present
also in $\alpha$-Sn(111),
with an even more pronounced buckling than in Ge;\\
ii) This reconstruction will be in energetic competition
with some adatom/restatom reconstructions,
the latter being likely to prevail;\\
iii) A surface metallization mechanism
is also possible because of the presence
of the bulk metallic $\beta$-Sn phase,
energetically very close to the $T=0$ bulk ground state
$\alpha$-Sn.

In this work we shall find that (apart from metallization, which
turns out to be a harder problem) these trends are generally
well borne out by {\em ab-initio} calculations.
An adatom-restatom reconstruction is
predicted to be the annealed ground state
of $\alpha$-Sn (111).
Although the exact periodicity cannot be predicted,
our geometry and energetics based on an elementary
$c(4\times 2)$ or $2\times 2$ unit should be fairly reliable.

This paper is organized as follows.
First of all, we calculate electronic structure,
total energy and optimal geometry of bulk Sn, both in the $\alpha$
semimetallic phase,
and in the $\beta$ metallic phase. This is described
in Section II. Next, in section III
we use the same ingredients for a
surface calculation in the usual slab geometry.
We deal first with the ideal,
unreconstructed $\alpha$-Sn (111) surface,
whose properties we study
without and with surface relaxation.
We find partly filled dangling
bond states in the ideal surface electronic structure,
which as usual suggest that
this is not a stable surface.
This is confirmed in Section IV, where
a $2\times 1$ displacive reconstruction is shown to lower
surface energy without energy barriers.
The more interesting $\pi$-bonded
chain reconstruction is considered in Section V. It is found
that a very strongly buckled $2\times 1$ $\pi$-bonded chain state
exists for $\alpha$-Sn (111),
its energy being better than that of the
Haneman state. Section VI is devoted to
the alternative possibility of adatom/restatom reconstructions.
We find this latter possibility to be energeticall ythe best,
particularly in the $c(4\times 2)$ local geometry. Lastly,
in Section VII we briefly describe an attempt at finding a stable
metallic reconstructed surface ground state, which however turns
out to be inconclusive.
Section VIII summarizes the main conclusions
of this work on $\alpha$-Sn (111),
confirming the trends extrapolated
from diamond, Si and Ge, and stressing our predictions for
future experimental work.

\section{Bulk properties}

The zero temperature structure of bulk Sn is the $\alpha$ phase
with a diamond lattice \cite{Donohue} of spacing
6.483 \AA\ (at 90 K) \cite{Rice}.
As is well known, if the temperature
is raised to $286$ K at atmospheric pressure,
semimetallic $\alpha$-Sn
transforms into the fully
metallic $\beta$-Sn phase\cite{Jayaraman}.
Under pressure, this transformation occurs
at lower temperatures, extrapolating to T=0 K
at a pressure of 5 Kbar \cite{Jayaraman,Cohen}.
Total energy LDA (local density approximation)
calculations \cite{Cohen}
confirm that at zero temperature and zero pressure
the $\beta$ phase is energetically
very close to the $\alpha$ phase,
their energy difference being 44 meV/atom,
with a predicted transition pressure to the $\beta$ phase of 8 Kbar.
The relative success of LDA calculations
in predicting very closely these extremely
delicate differences provides confidence
in extending this approach
towards exploring surface properties.

In the present {\em ab-initio} calculations
for $\alpha$-Sn (bulk and surface)
and $\beta$-Sn (bulk) we model the electron-ion interaction with
a norm-conserving pseudopotential \cite{Stumpf} in the
Kleinman-Bylander form \cite{KB} with $s$ and $p$ nonlocality,
and use the standard LDA for the electron-electron interaction.
We expand the Kohn-Sham orbitals in plane waves with an energy
cutoff of 12 Ry in all
calculations (bulk and surface) for consistency. For the
$\alpha$-Sn bulk calculation, 10 special k-points\cite{Chadi}
are sampled in the Irreducible Brillouin Zone (IBZ)
of the diamond phase.
For the metallic $\beta$ phase, instead, we find that
160 k-points are needed to describe
accurately the IBZ summations, with
an additional gaussian spreading of 0.14 eV \cite{spreading}.
We find a lattice constant $a=6.446$ \AA\
(exp. $a=6.483$ \AA\ \cite{Rice})
for $\alpha$-Sn  and $a=5.768$ \AA\
(exp. $a=5.812$ \AA\ \cite{Rayne})
for $\beta$-Sn (for simplicity, we fixed the c/a ratio
to the experimental value of 0.546).
We also find that the $\beta$-phase is
disfavored with respect to the $\alpha$-phase by 17 meV/atom,
with an $\alpha \to \beta$ transition pressure of 5 Kbar
in excellent agreement with experiment.
We have tested that increasing the energy cutoff to 35 Ry
and the k-point integration to 200 points
in the IBZ of the $\beta$-phase
does not alter significantly these results. On the contrary,
if the energy cutoff is less than 12 Ry, e.g. 10 Ry,
the transition pressure
becomes 2.5 Kbar and the energy difference drops to 9 meV/atom.

The electronic band structure of $\alpha$-Sn is reported
in Fig. \ref{bulk_band} and that of $\beta$-Sn\cite{band_beta}
in Fig. \ref{beta_band}.
As can be seen, in particular, the semimetallic character
of the $\alpha$-phase (zero gap at $\Gamma$) and the fully metallic
character of the $\beta$-phase
are of course correctly borne out in our calculations.

\section{The relaxed, unreconstructed $\alpha$-Sn (111) surface}

We study the surface properties of $\alpha$-Sn (111) by a standard
slab calculation. One of the two surfaces of the slab is frozen
in its ideal geometry, together with the
first three adjacent layers (a total of two rigid bilayers).
The atoms belonging to the remaining layers
are allowed to fully relax guided
by the corresponding Hellmann-Feynman forces. Convergence is
assumed when forces are less than 4 meV/\AA\ .
The number of atomic layers in the slab
is fixed to a total of 12 layers
(not including the adatom layer when present).
Each layer consists of either one, two, or four Sn atoms,
in correspondence to
choosing $1\times 1,$ $2\times 1,$ and $2\times 2$
[or c($4\times 2$)] surface cells, respectively. The number
of ``vacuum layers'' is
fixed to 6 (vacuum thickness $\sim 11$ \AA\ ),
and the number of k points in the
Irreducible Surface BZ (ISBZ) is
chosen according to the size of the surface
cell and its geometry, as described case by case.
The initial atomic positions
are chosen according to the
calculated equilibrium bulk lattice spacing
($a_\circ = 6.446$ \AA\ ).
This guarantees that the forces on the atoms of the central
layers are smaller than 4 meV/\AA\ for all the surfaces studied.
In all cases, surface energies $E_{surf}$
are given as $E_{surf} = E_{slab} - N E_{bulk}-E_{surf}^{ideal}$,
where $E_{slab}$ is the total energy of the slab,
$E_{bulk}$ is the energy per atom
of bulk $\alpha$-Sn as computed
in section II [$E_{bulk}$=-96.753 eV/atom] above,
$N$ is the total number of atoms in the slab. Furthermore
$E_{surf}^{ideal}=[E_{slab}^{ideal}-NE_{bulk}]/2$ is the energy of
the frozen ideal surface. Here $E_{slab}^{ideal}$ is
the total energy of a slab with both surfaces rigid and ideal,
computed using the same supercell
geometry and k-point set as $E_{slab}.$
We thereby have to repeat ideal surface calculation several
times in different supercells and k-point sets corresponding to
different surface reconstruction slab calculations in order to
compare different reconstructed surface energies.
The convergence of our results with respect to the k-points
sampling has been tested
for each surface by increasing the k-point number
after the atomic relaxation. Accordingly, we can estimate
our overall energy resolution to be about 10 meV/$(1\times 1)cell.$
We also constructed the electronic band
structure of the relaxed surfaces, by using the
Kohn-Sham eigenvalues of a 10-layer slab, obtained by removing
the seven bottom layers of the simulation slab
and replacing them by the inverted
image of the topmost five relaxed layers.
The reason for this procedure is threefold. First, we get rid
of the undesired states related to the bottom rigid ideal surface.
Second, we increase the effective symmetry of the supercell, thus
decreasing the computational effort
of the band structure calculation.
Third, although the interaction of identical surface
states belonging to opposite surfaces
generally lifts their degeneracy
(again an undesired effect),
their average energy still corresponds, to first order, to the
noninteracting value in the ideal case of an infinite slab.

As a first case we have considered
the $(1\times 1)$ unreconstructed surface. Six special
k-points in the hexagonal ISBZ have been used \cite{kpoints}.
The electronic band structure
of the ideal $(1\times 1)$ surface is reported in
Fig. \ref{ideal_band}. There are various surface
states lying in the projected gaps.
The surface states crossing the Fermi level inside the
fundamental gap are clearly related to
the presence of unsaturated surface dangling bonds.
This feature is common to all the other group-IV
insulator and semiconductors, and is responsible for
the high grade of instability of the ideal (111) surface,
as mentioned. The electron density corresponding
to the surface state is analysed
in Fig. \ref{ideal_charge},
and reveals a high degree of surface localization
as well as a clear dangling-bond character.

As the next step, we allowed the surface, i.e.
all atoms in the eight topmost surface layers,
to relax, according to
Hellmann-Feynman forces, so as to reduce surface energy.
Despite the presence
of unsaturated dangling bonds,
the result of this energy minimization shows that surface atoms
do not relax significantly (see Tabel \ref{energy}), with a
surface energy gain of only 7 meV/$(1\times 1)cell$, and
a downward relaxation of the top layer of 0.02 \AA\  .
We also checked that increasing the k-point number
from six to eighteen changed none of the above results.

\section{Haneman ($2\times 1$) ``buckled atom'' reconstruction}

In the previous calculation,
reconstruction was forbidden by symmetry.
If the symmetry constraints
imposed by the choice of a $(1\times 1)$
cell are relaxed, the ideal surface is provided with a simple
mechanism for the partial
saturation of the dangling bonds. One such
mechanism, first proposed by Haneman \cite{Haneman},
consists of a simple in-out
buckling of the topmost layer, resulting
in a $(2\times 1)$ displacive reconstruction. The inward motion
of one surface atom implies
an $sp^3\rightarrow sp^2$ rehybridization,
and a more $p_z$-like dangling bond for that atom.
The outward motion of the other atom,
by contrast, causes dehybridization,
and a more $s$-like dangling bond.
Since in the atom $E_s<<E_{p_z},$
electrons will flow from the inward
to the outward atom. This charge transfer empties and saturates
respectively the two dangling bonds and
therefore stabilizes the surface.
This $(2\times 1)$ reconstruction,
although actually never observed,
has been recently suggested
to play the role of a transition state,
a kind of ``stepping stone'' in the dynamical process leading
from an unreconstructed state towards, e.g., a $(2\times 1)$
$\pi$-bonded chain state\cite{Takeuchi_ge2x1}.
In order to study the possible occurence of such a buckled atom
reconstruction on $\alpha$-Sn (111),
we have repeated our calculation in a larger $(2\times 1)$
surface cell, using 4 special k-points
in the rectangular $(2\times 1)$ ISBZ\cite{kpoints}.
We find, indeed, that the surface spontaneously buckles as in
the Haneman distortion, against which the ideal surface is
therefore unstable,
very much as Ge (111) does\cite{Takeuchi_ge2x1}.
The energy gain from the ideal to the optimal buckled geometry
(Table \ref{energy}), is about 0.22 eV/$(1\times 1)cell,$
measured relative to the energy of the ideal
surface computed using the same $(2\times 1)$
supercell and k-point set.
The buckling of the top layer
is found to be enormous, namely 1.23 \AA\ .
The final atomic coordinates of the relaxed top five atomic
layers are given in Table \ref{buck_pos}.

\section{$(2 \times 1)$ $\pi$-bonded reconstruction}

The instability of the ideal (111) surface
against $(2\times 1)$ buckling is
interesting, but probably academic, except possibly in dynamics.
In our pursuit of the true (111) ground state surface structure,
we consider next the surface reconstruction geometries which are
experimentally observed in the other group-IV
insulator and semiconductors. Here we consider
the (111) $2\times 1$ $\pi$-bonded chain reconstruction.
In the lack of any experimental and theoretical data,
we arranged the surface atoms in the structure
proposed by Pandey \cite{Pandey}. Pandey's
structure can be obtained
by simultaneously depressing one surface
atom into the second layer and
correspondingly raising one second layer atom,
so that i) the number of dangling bonds per surface atom is
the same as before; ii) all bond lengths are
set to the bulk value.
The atomic coordinates
in Pandey's structure are given in Table \ref{pi_pos}.
Subsequently, we allowed the atomic positions
to relax according to their {\em ab-initio} forces,
using the same supercell and same k-point sampling as
in the previous section. At convergence, the energy gain of this
$2\times 1$ reconstruction, with respect to the ideal surface, is
0.24 eV/$(1\times 1)cell$ (Table \ref{energy}),
i.e., larger than that of the previous section.
The optimal atomic coordinates of the top five atomic
layers are given in Table \ref{pi_pos}. The bond lengths
within the $\pi$-bonded chain are 2.80 \AA\  , only 0.4 \% longer
with respect to the ideal bulk bond length (2.79 \AA\ ).
The chain buckling (1.15 \AA\ ) is however very large if compared
with that of Si or Ge (0.4 \AA\ \cite{Ancilotto_si2x1,LB}, and
$0.8$ \AA\ \cite{Takeuchi_ge2x1}, respectively),
fully confirming the
trends discussed in Section I and listed in Table \ref{trend}.
The magnitude of this buckling is so large,
that the whole $\pi$-bonded
chain is now lying onto an essentially
vertical plane (see Fig. \ref{2x1_charge}).
The large chain buckling is accompanied by
a large electron transfer from the lowered to the raised
chain atom,  which largely saturates
the raised atom dangling bond. This is clearly seen in Fig.
\ref{2x1_charge},
where the charge distributions of the highest occupied
(panel (a)) and lowest unoccupied states (panel (b)) are shown.
This charge rearrangement is
accompanied by the opening of a large gap
in the dangling bond surface state, as seen in the electronic
structure of Fig. \ref{2x1_band}.
Here the highest occupied (lowest unoccupied) surface states
correspond to raised (lowered) atom dangling bonds respectively.
Finally, since the alternative possibility of a dimerization of
the chain was excluded in our cell
due to symmetry constraints, we tried slightly
dimerizing the initial, unbuckled $\pi$-bonded chain,
and also the final,
fully buckled one (thereby doubling the number
of k-points in the ISBZ).
However, we found these configurations
to be energetically disfavored
with respect to the undimerized chain.

\section{Adatom / restatom reconstructions}

As the next likely candidate
for the reconstruction of $\alpha$-Sn (111),
we now consider the adatom / restatom reconstruction, known to
be the stable mechanism for both Si and Ge. Although this
reconstruction shows up with rather more
complex surface unit cells, such as the
$(7\times 7)$ DAS model in Si\cite{7x7}
and the $c(2\times 8)$ in Ge\cite{c2x8},
the building block of this class of reconstructions is simple.
It is based on the presence of one adatom every four
$(1\times 1)$ first-layer atoms.
The adatom sits in a threefold site,
saturating three first-layer atoms,
leaving one (the restatom) unsaturated.
Of the two available threefold sites, namely
$T_4$ (on top of a second-layer atom),
and $H_3$ (hollow site), the
adatoms prefer, at least
in Si and Ge\cite{Meade_sige2x2,Takeuchi_ge2x2},
the $T_4$ site.
Moreover, the $T_4$ site adatoms may still be arranged
in a $(2\times 2)$ or $c(4\times 2)$ geometry.
For instance in Ge (111) $c(2\times 8)$, they are stacked in
alternated $(2\times 2)$ and $c(4\times 2)$ cells.
In this work we assume the pure $(2\times 2)$ [or pure
$c(4\times 2)$] $T_4$ structure as the prototype
adatom / restatom reconstruction,
restricting for simplicity our analysis to
this case only.
As for the $\pi$-bonded reconstruction case, we have no
data to guide us.
We start with an ideal $T_4$ position for the adatom (see
Table \ref{2x2_pos}) such that the
lengths of the adatom bonds with the three first-layer atoms
are equal to the bulk bond-length.
The relative positions of atoms are initially chosen
according to the $(2\times 2)$ [or $c(4\times 2)$]
case of Table \ref{2x2_pos} [or Tabel \ref{c2x4_pos}].
The $k$-point sampling of this larger supercell is
restricted to a single special point
(mean-value point) of the
hexagonal $(2\times 2)$ ISBZ\cite{kpoints}.
We then calculate Hellmann-Feynman forces, and
let the atoms relax to the equilibrium positions. We also find
that increasing the number of
special k-points of the relaxed surface
to three and six does not change
the surface energy within 5 meV/$(1\times 1)cell$.
As before we must also repeat the rigid ideal slab
calculation using this larger supercell and k-point sampling.
As shown in Table \ref{energy}, the
energy of the relaxed adatom-reconstructed
surface turns out to be lower than all previous
reconstructions by as much as 0.09 eV/$(1\times 1)cell.$
This indicates that
the adatom / restatom reconstruction is the most
efficient way of saturating the
highly unstable dangling bonds of the
clean (111) surface. The alternative choice
of a $c(4\times 2)$ adatom / restatom geometry
(using the two k-points obtained from the refolding in the
$c(4\times 2)$ ISBZ of the
four ones used in the above $(2\times 1)$
reconstruction calculations) confirms this result,
yielding an energy 16 meV/$(1\times 1)cell$
lower than the ($2\times 2$) choice.
This energy difference is however
comparable with our overall energy resolution. Similarly,
our calculation does not rule out the existence of more
complex surface reconstructions. It does however suggest
that, if this is the case, then the adatom / rest
atom mechanism, either in a ($2\times 2$) or
in a $c(4\times 2)$ arrangement,
is very likely to constitute their basic
building block,
as is the case in Si \cite{7x7} and Ge \cite{c2x8}.
Moreover, the advantage over the $\pi$-bonded chain
reconstruction is larger
in $\alpha$-Sn, confirming the Si-Ge trend.

In Table \ref{2x2_pos}
we report the relaxed atomic coordinates of the
$(2\times 2)$ adatom-restatom reconstructed surface.
Due to the symmetry constraint, the adatom and restatom
only relax in the $z$ direction.
The in-plane distance between the rest atom
and its three neighbors shrinks by about 10 \% with respect
to the ideal bulk value.
The rest atom moves outward from its initial
bulk-like position by 0.8 \AA\ ,
again a very large relaxation
if compared with values in Si (0.3 \AA\ ),
and in Ge (0.55 \AA\ ). Due to this relaxation, the rest atom
has bond angles of 94.0$^\circ$, a value closer to total $s$, $p$
dehybridization (90$^\circ$) than
to the original $sp^3$ one (109$^\circ$),
and bond lengths of 2.84 \AA\
(bulk bond length is 2.79 \AA\ ).
In turn, the adatom
bond lengths with the three neighboring first-layer atoms
are 2.97 \AA\ , larger by 7 \% than the bulk bond length,
and the adatom bond angles are 93.4$^\circ$.
The second-layer atom under the adatom is pushed
downward. Although its final distance from the adatom (2.99 \AA\ )
is comparable with the other adatom bond length,
there is no bond-like accumulation of electronic charge
between them, as can be seen in the total charge
density reported in Fig. \ref{2x2_totcharge}.
Rather, most of the adatom charge is transferred to
the restatom dangling bond.
This charge transfer is not directly visible
in the total charge density of Fig. \ref{2x2_totcharge},
but shows up clearly in the band structure of Fig. \ref{2x2_band}.
The half filled
surface-localized band typical of unsaturated dangling bonds
(see Fig. \ref{ideal_band}), is here split
into a lower filled band with prevailing rest-atom character,
and an upper empty band manly
localized onto the adatom. This charge
transfer is known to be the fundamental mechanism for the
stabilization of the adatom / rest atom reconstruction in Si and
Ge \cite{Meade_sige2x2,Takeuchi_ge2x2},
and does appear to be so even in Sn.
A glance at the charge density associated
with the lower and upper surface bands (see Fig.
\ref{2x2_charge}) confirms this expectation.
The charge associated with the lower band, shown
in the panel (a) of Fig. \ref{2x2_charge},
has a strong rest-atom character
and extends very little into the bulk,
thus confirming its picture of saturated dangling bond. On the
contrary, the upper unoccupied
band (panel (b) of Fig. \ref{2x2_charge})
has a strong adatom character, but
extends largely below the adatom,
and might therefore be thought to as
a band of so called ``floating bonds'' \cite{Pantelides}
associated with both the adatom and the five-fold
coordinated atom immediately underneath.

The optimal atomic positions and
electronic band structure of the
$c(4\times 2)$ adatom/restatom reconstruction
are given in Table \ref{c2x4_pos} and Fig. \ref{c2x4_band}.
Differences in the atomic relaxations and charge densities are
negligible with respect to
the ($2\times 2$) case, and will not be
re-discussed.

We have also verified that the $H_3$ site for the adatom is not
energetically favored, the energy of this surface being
higher than the one with adatoms in $T_4$
sites by about 70 meV/$(1\times 1)cell$.
Its optimal atomic coordinates are given in Table \ref{H3_pos}.

\section{Metallic overlayers}

The presence of a metallic
phase ($\beta$-Sn) energetically very close
to the $\alpha$ phase,
suggests that an insulator-to-metal transition
might take place at the surfaces of $\alpha$-Sn,
for example, through the formation of
a thin $\beta$-Sn metallic overlayer. Such was
proposed to be the case, e.g., in gallium\cite{Marco_gallio},
where based on calculations similar to these presented here
a metallic bilayer of Ga-III was predicted to
stabilize the surface of $\alpha$-Ga better
than any other reconstruction.
In our case, however, we encounter a problem, since
no low-index $\beta$-Sn planes appear to match epitaxially the
$\alpha$-Sn (111) lattice. In particular, we have calculated the
surface energy of several structures
obtained by covering the $\alpha$-Sn(111)
surface with strained
epitaxial (100), (110), (111), and (221) planes of
$\beta$-Sn.
None of these surfaces gave a surface energy comparable,
let alone lower,
than the ideal (111) surface, all our results being higher with
respect to the $(2\times 2)$ adatom / restatom reconstruction by
more than 0.45 eV/$(1\times 1) cell$.
However, this negative
result cannot of course be taken as a guarantee
that metallic overlayers
do not form at the $\alpha$-Sn surface, since
other more complex configurations,
beyond our present factory, might
have to be considered.
The situation with respect to metallization
remains therefore open.

An indirect indication against metallization
is however provided by surface
energies. One can expect metallization to be favored,
in fact, in cases
where the metal has a lower
surface free energy. In our case, however,
the T=0 K energy of
reconstructed $\alpha$-Sn (111), $E_{surf}\approx
540~mJ/m^2 ,$ is substantially lower
than the free energy measured for
$\beta$-Sn\cite{Kumikov},
namely $670~mJ/m^2 .$ This suggests that
metallization might not
take place in the ground state, while it could
be attained after deconstruction.

\section{Discussion and Conclusions}

From this {\em ab-initio} study,
we predict that the (111) surface
of $\alpha$-Sn should be unstable in its unreconstructed form,
and can be stabilized by various types of reconstructions.

Among the reconstructions not involving adatoms,
the $(2\times 1)$  $\pi$-bonded
chain model is energetically best,
and is predicted to display a gigantic
buckling above 1 \AA\ in magnitude.
This is in line with the trend
towards increasing buckling
in going from diamond to Si to Ge (111).

In the presence of adatoms,
the adatom-restatom pair reconstruction is found
to be energetically best,
and is thus the strongest candidate for the
true ground state of this surface. The relative energy gain over
the $\pi$-bonded state is
larger than in Si and Ge, again in line with trends.
The actual optimal periodicity of the adatom-reconstructed
$\alpha$-Sn (111) is however difficult to predict (as is the case
in Si and Ge) because of many subtle factors, including possible
coexistence and competition
between the two different basic units,
namely $(2\times 2)$ and $c(4\times 2).$

A search for a possible metallic
state of $\alpha$-Sn (111), suggested by
the proximity of $\beta$-Sn in the phase diagram,
was so far inconclusive,
and is disfavored by surface energy considerations.

The beginning of actual experiments on $\alpha$-Sn (111)
is at this stage
highly desirable, as we are not aware of any data so far.
The present study makes rather
strong predictions,
both at the qualitative and the quantitative level.
Qualitatively, we expect $\pi$-bonded chains to dominate on the
adatom-free (e.g., cleaved) surface,
and adatom-restatom reconstructions
to appear after annealing, very much as for Si and Ge (111).
At the quantitative level, we predict that buckling distortions
and the associated dipole moments connected
with intra-surface ionic charge transfers should be larger than
in Si and Ge. This effect ought to be relevant to, e.g., surface
vibrational spectroscopy.
The corresponding band splittings should finally
be observable in electron spectroscopies,
including photoemission and
optical absorption,
particularly to optical conductivity for $q\neq 0.$

It is hoped that these results will stimulate newer efforts
towards an understanding of the $\alpha$-Sn (111) surface,
where hardly any data can presently be found.

\centerline{\bf  ACKNOWLEDGMENTS}

We would like to thank Dr. Marco Bernasconi
for providing us the computer
codes used in this work, and for his cooperation in the early
stage of this work. This research was partly sponsored through EEC,
contract ERBCHRXCT 930342, and by the Italian CNR, under projects
``SUPALTEMP'' and also under contract ``95.01056.CT12''.

\newpage

Condensed Matter (cond-mat); Materials Science (cond-mat.mtrl-sci)


Large-amplitude intraday variability in QSO 1156+295 observed during a VLBI experiment

Abstract: We present here the discovery of rapid, large amplitude intraday variability in the compact flat-spectrum radio quasar 1156+295. The detection of 40% flux density variations at 15 GHz on a timescale of only 2.7 hours was serendipitously made when the source was observed with the Very Long Baseline Array as a part of the MOJAVE survey programme on February 5, 2007. Intraday variability on timescales of a few hours or less is rare, and there exist very few sources that show large-amplitude variations on a timescale as short as what is now observed for 1156+295. The shape of the visibility function of the source changes very little during the observation, although the correlated flux density changes by 40%. This suggests that the variability occurs in a single dominant compact component. The observed variability characteristics are consistent with interstellar scintillation in nearby, highly turbulent medium. The rms amplitude of modulation at 15 GHz is unusually large and it implies a rather high scattering measure along the line-of-sight towards 1156+295.

\section{Introduction}

Flux density variations on timescales of $\lesssim2$ days -- so-called
intraday variability (IDV) -- are seen at centimetre wavelengths in a
significant fraction of compact, flat-spectrum AGN \cite{wag95,lov03}. There
is now good evidence that, at least in the case of the most extreme sources
showing large-amplitude variations on intra-hour timescales, the IDV is due to
interstellar scintillation (ISS) in the turbulent, ionised interstellar
medium\footnote{We note that there are some sources likely exhibiting also
  intrinsic variability on a timescale of $\sim1$\,day \cite{qui91}.}  (see
e.g. \cite{big07} and references therein). This evidence is mainly based on
the detection of time delays in the variability pattern arrival times between
widely separated telescopes and on the observations of an annual modulation of
the variability timescale. By detailed analysis of the scintillation it is
possible to probe both the ISM and the structure of compact radio sources at
microarcsecond resolution, which is far higher than what can be achieved by
the present day VLBI \cite{mac02}. The short variability timescale of the most
extreme sources facilitates such studies by allowing well-sampled observations
of the flux density fluctuations to be made within a single observing
run. Unfortunately, however, while IDV in flat-spectrum radio sources is
common, variability on timescales of a few hours or less and with an rms
amplitude of modulation larger than 10\% is extremely rare and only a handful
of such sources are known. We report here the serendipitous discovery of one
new source, QSO 1156+295, showing IDV on a timescale of less than 3\,h and
with 13\% rms amplitude of modulation. This discovery is unusual in two
ways. Firstly, it was made during a VLBI experiment, and secondly, the
modulation index of 13\% is atypically high at 15\,GHz.

\begin{figure}
\centering
\includegraphics[angle=-90,width=0.45\textwidth]{1156+295.u.2007_02_05.icn_color.ps}
\caption{Naturally weighted 15\,GHz false colour image of 1156+295 observed
  with the VLBA on February 5, 2007. The map peak brightness is 1.46 Jy
  beam$^{-1}$ and the low flux density cut-off is at 0.7 mJy beam$^{-1}$.}
\label{map}
\end{figure}

\section{Observations and analysis}

1156+295 (4C +29.45) is a quasar at $z=0.729$ that is strongly variable
throughout its spectrum from radio to gamma-rays \cite{kov02,wil83,sre96}. It
has a core-jet morphology in VLBI maps and it appeared strongly core-dominated
in 2007 (Fig.~\ref{map}). 1156+295 was observed with the NRAO's Very Long
Baseline Array (VLBA) at 15\,GHz as a part of the MOJAVE project \cite{lis05} on
February 5, 2007. In the same 24-hour session, 24 other sources beside
1156+295 were also observed. The individual scans of different sources were
interleaved in order to maximise the $(u,v)$ coverage for each
source. 1156+295 was observed for 9 scans distributed between $4^h$ and
$16^h$\,UT and each lasting 4.7\,min. The data were calibrated using the
standard methods of VLBI data reduction (see description in
\cite{lis05}). After \emph{a priori} amplitude calibration and fringe fitting,
it was noticed that the correlated flux density of 1156+295 shows strong,
correlated temporal variability from scan to scan at \emph{every
  baseline}. There is a deep minimum, surrounded symmetrically by two maxima,
in the correlated flux density curves between $7^h$ and $12^h$\,UT. The
peak-to-trough amplitude of this dip is 0.6\,Jy, 40\% of the average flux
density, and the variability timescale is only 2.7\,h. The dip can be seen at
every baseline, which excludes the source structure as the cause of the
variability. Also, neither the system temperature measurements used in the
amplitude calibration nor the fringe-fit solutions of the experiment showed
any anomalies that could explain the variability as an instrumental effect.

\begin{figure}
\includegraphics[width=\textwidth]{figure2.eps}
\caption{\emph{Top:} Amplitude self-calibration solutions of three example
  antennas (BR, MK, and PT) for the VLBA observation on February 5, 2007. The
  figure shows one solution per scan and per IF. Scans at elevations below
  $15^\circ$ are excluded. Solutions for 1156+295 are shown in red colour,
  while blue colour corresponds to the solutions of all the other sources. The
  obvious discrepancy between the solutions for 1156+295 and for the other
  sources is present at all ten antennas. \emph{Bottom:} Examples of the
  correlated flux density curves of 1156+295 at three baselines after
  calibration of antenna gains by amplitude correction factors interpolated
  from the nearby scans of other sources. Interpolation was done from the
  scans that were within 1\,h of the target scan, and that were observed at
  source elevation $>15^\circ$. Time is in UT.}
\label{baseline}
\end{figure}

We tested the reality of the flux density variations by imaging and
self-calibrating the $(u,v)$ data of 1156+295 in a usual manner and comparing
the resulting antenna gain correction factors with those derived from the
self-calibration of the other 24 sources observed in the same experiment. The
top panels in Fig.~\ref{baseline} show these gain amplitude correction factors
for three example antennas. While the amplitude self-calibration with a
5-minute solution interval is able to remove the variability in 1156+295, it
results in gain amplitude correction factors that are -- \emph{for every
  antenna} -- significantly offset from those determined from the 24 other
sources. This can be explained if the observed variability is indeed genuine
IDV, but does not significantly change the shape of the source's visibility
function during the observation. This happens for example when the variability
occurs in a single dominant, compact component containing most of the source's
flux. Calibration errors cannot account for the behaviour described above,
because the antenna gain is source-independent. Thus, we conclude that the
variations in the correlated flux density of 1156+295 are due to genuine IDV.

\begin{figure}
\includegraphics[width=0.495\textwidth]{proc_fig.2.eps}
\includegraphics[width=0.495\textwidth]{lightcurve_col.eps}
\caption{\emph{Left:} Calibrated correlated Stokes I flux density of 1156+295
  as a function of $(u,v)$ radius for each individual scan of the VLBI
  experiment on February 5, 2007. The data has been averaged over the IFs and
  over the scan length in time. The different scans are shown in different
  colours with the scan start time in UT indicated in the legend.
  \emph{Right:} Integrated flux density curve of 1156+295, obtained by
  averaging the visibility amplitudes at projected baselines shorter than
  100\,M$\lambda$. The colour-coding of the scans corresponds to the one used
  in the left panel.}
\label{lightcurve}
\end{figure}

The residual errors in the antenna gains, which remain after the \emph{a
  priori} amplitude calibration, need to be corrected before the observed
variability in 1156+295 can be properly analysed. The large number of sources
that were observed during the MOJAVE session allow us to estimate the gain
amplitude correction factors for 1156+295 by interpolating the
self-calibration solutions from the nearby scans of other sources. Examples of
correlated flux density curves that were calibrated in this way are shown in
the bottom panels of Fig.~\ref{baseline}. As can be seen in the figure, the
variations in the correlated flux density are very similar at long (MK-SC),
intermediate (BR-OV), and short (LA-PT) baselines. The left panel of
Fig.~\ref{lightcurve} shows the calibrated correlated flux density of 1156+295
as a function of $(u,v)$ spacing for each individual scan. The figure suggests
the shape of the visibility function does not change appreciably during the
observation, although the flux density changes by 40\%. To analyse possible
small changes, we have plotted in Fig.~\ref{norm} the difference between the
normalised visibility function of each scan and the average visibility
function of the whole observation of 1156+295. There are changes, on the level
of $<8$\%, in the shape of the visibility function during the observation.
However, as can be seen in the right panel of Fig.~\ref{norm}, these changes
are purely due to the baselines to one antenna (St. Croix), and they can be
caused by calibration inaccuracies of this antenna. We are therefore unable to
conclusively confirm the detection of time variability in the shape of the
visibility function. An upper limit to variability is 8\% during the course of
observation.

\begin{figure}
\centering
\includegraphics[width=0.495\textwidth]{uv_norm_dif.ed.eps}
\includegraphics[width=0.495\textwidth]{uv_norm_dif_noSC.ed.eps}
\caption{\emph{Left:} Difference between the visibility function of each
  individual scan of 1156+295 and the average, binned visibility function of
  the whole observation. The visibility function is obtained by normalising
  the binned correlated flux density of each scan to 1.0 in the first bin. The
  bin size is 50\,M$\lambda$. The scans are shown with the same colour-coding
  as in Fig.~3. As can be seen, there is little change in the normalised
  visibility function despite the strong variability of the correlated flux
  density. During the observation, the normalised visibility function changes
  at $(u,v)$ radius of $200-300$\,M$\lambda$ by about $8$\%. \emph{Right:}
  Same as in the left panel, but without baselines to St. Croix. Now the small
  changes in the shape of the visibility function during the observation have
  completely vanished.}
\label{norm}
\end{figure}

The right panel of Fig.~\ref{lightcurve} shows the integrated VLBA flux
density curve for 1156+295, which we constructed by averaging the visibility
amplitudes at projected baselines between $6-100$\,M$\lambda$. Since the
visibility function is essentially flat in this range (see the left panel of
Fig.~\ref{lightcurve}), the averaging gives a good estimate of the integrated
emission coming from angular scales $\lesssim30$\,mas. Averaging also reduces
the errors that are due to inaccurate amplitude calibration, since these are
antenna-specific. From the integrated VLBA flux density curve, we calculate
the variability timescale as the average of the peak-to-trough and
trough-to-peak times of the big dip, which gives
$t_\mathrm{var}=2.7\pm0.5$\,h. The modulation index $m$, defined as the
standard deviation of the flux density curve divided by the mean flux density,
is $13\pm3$\%. This value of $m$ is much higher than what is typically
observed for IDV sources at frequencies above 5\,GHz \cite{ked01,kra03}.

\section{Discussion}

Through light-travel time arguments, the variability timescale of 2.7\,hours
translates into a brightness temperature of $\gtrsim 2 \times 10^{19}$\,K for
1156+295 if the observed flux density variations are source-intrinsic. This is
far in excess of the inverse Compton (IC) catastrophe limit of $10^{12}$\,K
\cite{kel69}. Therefore, a very high Doppler factor would be needed in order
to explain the observations in the standard framework of incoherent
synchrotron radiation from a jet of relativistic electrons. A Doppler factor
of $\gtrsim 270$ would be needed in order to avoid the IC catastrophe in the
case of a power-law electron energy distribution, and even in the case of the
quasi-monoenergetic electron population \cite{kir06}, a Doppler factor of
$\gtrsim200$ would be needed. Such fast jets are unlikely to exist on both
theoretical \cite{beg94} and observational \cite{coh07} grounds. Thus, we
consider it probable that the fast variability observed in 1156+295 is due to
source-extrinsic effects.

A sufficiently compact radio source will scintillate due to the wave
propagation effects in the ionised interstellar medium of our Galaxy (for a
review, see e.g. \cite{ric90,goo97}). The scattering strength is determined by
the strength of the electron density fluctuations along the line of
sight. Below a certain critical frequency $\nu_\mathrm{s}$, both narrow-band
diffractive and broad-band refractive scattering phenomena can be observed and
the scattering is referred to as ``strong''. Above the critical frequency, in
the so-called ``weak'' scattering regime, the refractive and diffractive
scattering length scales become equal and flux density variations arise due to
slight focusing and defocusing over the Fresnel scale.

The variability timescale and modulation index can be used to constrain the
properties of the scattering medium. IDV has been previously observed in
1156+295 at 5\,GHz in 2002, albeit with less extreme characteristics:
$m=5.8$\% and $t_\mathrm{var}\sim20$\,h have been reported \cite{lov03}. For a
point source, $m \propto \nu^{17/30}$ and $t_\mathrm{var} \propto \nu^{-11/5}$
in the case of strong refractive ISS, while in the weak regime $m \propto
\nu^{-17/12}$ and $t_\mathrm{var} \propto \nu^{-1/2}$ \cite{ric90}. Therefore,
the difference between timescales observed at 5\,GHz and 15\,GHz suggests that
$\nu_\mathrm{s}$ is above 5\,GHz. This implies a rather large scattering
measure towards 1156+295, which is somewhat unexpected considering the high
galactic latitude ($b=78.4^\circ$) of the source \cite{cor02}. However, if the
scintillation occurs in the very local ISM, there is not necessary a strong
correlation between the scattering measure and the galactic latitude
\cite{bha98}. There are also 5 years between these observations, and the
source could have been in a more compact stage at our epoch than in
2002. Simultaneous multifrequency measurements are needed to settle this.

Setting a lower limit to the intrinsic source size,
$\theta_\mathrm{s}^{FWHM}$, by the IC catastrophe argument, it is possible to
constrain the maximum distance to the scattering screen. If the maximum
Doppler factor $\delta$ is assumed to be $<50$ \cite{coh07}, the lower limit
to $\theta_\mathrm{s}^{FWHM}$ is about 17\,$\mu$as. Together with the short
variability timescale of 2.7\,h and the modulation index of $13$\%, this
implies a maximum screen distance of about 300\,pc for typical screen
velocities \cite{goo97,sav08}. If equipartition conditions in the source are
assumed, we can estimate that $\theta_\mathrm{s}^{FWHM} \sim 270 \cdot
\delta^{-7/17}$\,$\mu$as. Again assuming $\delta < 50$, this would place the
screen at the distance of $\lesssim 100$\,pc. The above calculations constrain
also the scattering measure \cite{goo97}, which indeed turns out to be rather
large: {\it SM} $\gtrsim 0.5 $\,m$^{-20/3}$\,pc for a screen distance of
$\lesssim 300$\,pc, and {\it SM} $\gtrsim 4$\,m$^{-20/3}$\,pc for a screen
distance of $\lesssim 100$\,pc (an uncertainty of 3\% in $m$ has been assumed
when calculating these limits; a more detailed analysis is presented in
\cite{sav08}).

The rapid, large amplitude IDV in 1156+295 is in principle consistent with
interstellar scintillation due to a nearby, localised region of highly
turbulent ionised gas. The above-derived lower limits for {\it SM} in the
direction of 1156+295 are, however, 5-40 times larger than what is predicted
by Cordes \& Lazio \cite{cor02} model of the distribution of free electrons in
the Milky Way. Therefore, further observations should be carried out to search
for other signs of increased turbulence in the direction of 1156+295. Finally,
we note that the case of 1156+295 is also an important reminder that large
amplitude IDV within the timescale of a VLBI experiment violates the basic
assumption made in Earth rotation synthesis, and can significantly degrade
VLBI imaging results.

\acknowledgments

We thank Lars Fuhrmann, David Jauncey, Thomas Krichbaum, Matthew Lister and
Sarma Kuchibhotla for useful discussions. Both authors are research fellows of
the Alexander von Humboldt Foundation. TS was also partially supported by the
Max-Planck-Gesellschaft and by the Academy of Finland grant 120516. The
National Radio Astronomy Observatory is a facility of the National Science
Foundation operated under cooperative agreement by Associated Universities,
Inc.