Microphase Separation Induced by Differential Interactions in Diblock Copolymer/Homopolymer Blends

Abstract: Phase behavior of diblock copolymer/homopolymer blends (AB/C) is investigated theoretically. The study focuses on a special case where all three binary pairs, A/B, B/C and C/A, are miscible. Despite the miscibility of the binary pairs, a closed-loop immiscible region exists in the AB/C blends when the A/C and B/C pair interactions are sufficiently different. Inside the closed-loop, the system undergoes microphase separation, exhibiting different ordered structures. This phenomenon is enhanced when the homopolymer (C) interacts more strongly to one of the blocks (A or B).

\section{Introduction}

The development of new polymeric materials is driven by the
increasingly complicated requirements of advanced engineering,
as well as by the desire to improve material properties and
reduce production cost.
Beside synthesizing new types of homopolymers and copolymers,
blending different polymers provides another route to obtain new
materials \cite{Paul_Newman, Utracki}.
Polymer blends can have combinative and enhanced properties of their
components.
From a thermodynamic point of view, polymer blends may be
miscible, partially miscible, or immiscible.
The physical properties of polymer blends vary drastically
in these different states.
From this perspective, a good understanding of the phase behavior of
polymer blends is crucial.
Because polymer blends are composed of more than one element, their
phase behavior is controlled by a large number of parameters, such as
chain lengths, monomer interactions and polymer architectures.
Due to the very large parameter space, theoretical study is crucially
important to understand the phase behavior and material
properties in this complex system.

The simplest polymer blend consists of two different homopolymers, A
and B.
For symmetric binary A/B blends, both homogeneous and inhomogeneous
phases exist, depending on the interaction strength $\chi_{AB}N$,
where $\chi_{AB}$ is the Flory-Huggins interaction parameter and
$N$ is the degree of polymerization of the polymers \cite{deGennes}.
For small values of $\chi_{AB}N$, the two homopolymers are miscible
and the blend is in a homogeneous state.
For $\chi_{AB}N$ larger than a critical value ($\chi_{AB}N>2$), the
two homopolymers become immiscible.
A macrophase separation occurs where the blends separate into A-rich
and B-rich phases.
The situation is different when the A and B homopolymers are linked
together to form AB diblock copolymers.
In this case, macrophase separation cannot take place because
of the chemical connections between the A and B blocks.
Instead, a microphase separation occurs in which the A and B are
separated locally at a length scale determined by the size of the polymers
\cite{Leibler1980, Hamley}.
The microphase separation is also controlled by the interaction
strength $\chi_{AB}N$.
For symmetric diblock copolymers, the critical value of $\chi_{AB}N$
for order-disorder transition is about 10.5.

It is interesting to blend AB diblock copolymers with homopolymers C.
In this case the microphase separation of diblock copolymers can
compete with the macrophase separation of the homopolymers.
The different interactions between different monomers provide a rich
phase behavior.
If the homopolymer C is immiscible with both blocks A and B, the
situation is simple: the homopolymers will be separated from diblock
copolymers.
A more complex case involves AB/C blends where the homopolymers C are
immiscible with one block of the diblock copolymers, but interact
favorable with the other block \cite{Jiang1991, Jiang1995,
  Lowenhaupt1994, Zhao1997, Han2000}.
This system is similar to the case of amphiphilic molecules in solution,
which is important to understand the self-assembly of surfactants and
lipids.
A simple example of this class of blends is that the homopolymers are
chemically identical to one of the blocks of the copolymers, i.e., an
AB/A blend.
Binary AB/A blends have been extensively studied theoretically
\cite{Semenov1993, Matsen1995, Matsen1995a, Janert1998}
and experimentally \cite{ Hashimoto1990, Tanaka1991, Winey1991}.
The phase diagrams of AB/A blends show the coexistence of macrophase
separation and microphase separation, and the addition of the
homopolymers tends to stabilize some complex ordered structures.

Another interesting case occurs for blends consisted of
C homopolymers that are miscible with both the A and B blocks.
The miscible nature of the blends may provide potential applications
which rely on the homogeneity of the material.
Theoretically and practically, the extension to the attractive
interactions between compounds may lead to new phenomena
and create new materials.
In general, miscible blends are characterized by homogeneous phases.
However, phase separation can be induced by differential
monomer-monomer interactions.
An example is found in ternary blends composed of A/B/C
homopolymers where all three binary pairs are miscible.
A closed-loop immiscible region is found in the phase diagram
\cite{Zeman1972, Jo1991, Manestrel1992, Kuo2002}.
In cases that the attractive interaction between A/C is much stronger
than that of B/C and A/B, A and C homopolymers tend to be
separated from B.
On the other hand, macroscopic phase separation of A and B cannot take
place for AB/C blends, because A and B are chemically bonded together.
Similar to the case of diblock copolymers, AB/C blends can reduce their
free energy through microphase separation.
Indeed, the microphase separation of AB/C blends has been observed in
experiment of Chen et al. \cite{Chen2008}.
These authors investigated AB/C blends where the interactions
between each pair of segments are favorable.
Their experiment revealed a phase diagram with a closed microphase
separation loop, despite the fact that the C homopolymers have attractive
interactions with both blocks of the copolymers.

In this paper, we present a theoretic study of the phase behavior of
diblock copolymer/homopolymer blends.
The study focuses on the case where the homopolymers attract to
one block much strongly than to the other block of the diblock copolymers.
We use the Gaussian chain model for the polymers, and
apply the random phase approximation (RPA)
to examine the stability limits of the homogeneous phase, leading to
both macrophase and microphase separation transition.
While the RPA calculates the stability boundary of the homogeneous
phase, we are also interested in the morphological details inside
the microphase separation region.
For this purpose, self-consistent field theory is employed.
Various representative phase diagrams are constructed to
illuminate the general trends in the phase behavior by varying
the homopolymer length and monomer-monomer interaction parameters.
Comparison with available experiments is given.

\section{RPA Analysis}

The system discussed in this work is a mixture of AB diblock
copolymers and C homopolymers.
For the diblock copolymer, the degrees of polymerization for the A-
and B-block are $Nf_A$ and $N(1-f_A)$, respectively, and the C
homopolymers are with a degree of polymerization $\kappa N$.
The volume fraction of the diblock copolymers and homopolymers
in the blends are $1-\phi_H$ and $\phi_H$, respectively.
For simplicity we assume all species have the same monomer volume
$\rho_0^{-1}$ and statistical segment length $b$.
The interactions between each pair of monomers are characterized
by three Flory-Huggins parameters, $\chi_{AB}$, $\chi_{BC}$ and $\chi_{AC}$.

The RPA analysis of the system \cite{deGennes, Leibler1980, Mori1987,
  Ijichi1988} starts with an external potential $u_i$ acting on the
$i$ monomer.
Assuming that the external fields are small, the density response
$\delta \phi_i$ to the external potential  can be written in the
Fourier space as a linear function of the external potential,
\begin{equation}
  \label{eq:phi_tildeS}
  \delta \phi_i (q) = - \beta \sum_{j} \tilde{S}_{ij}(q) u_j(q),
\end{equation}
where $\tilde{S}_{ij}(q)$ is the Fourier transform of the
density-density correlation between $i$ and $j$ monomers.
Here we have used the fact that functions depend on the wave vector
$\mathbf{q}$ only through its magnitude $q \equiv |\mathbf{q}|$ because of
the isotropic symmetry of a homogeneous phase.

The interaction between the monomers can be taken into account
through the mean-field approximation.
To this end, the effective potential acting on the $i$ monomer is
written in the form,
\begin{equation}
  \label{eq:ueff}
  u^{\mathrm{eff}}_i (q) = u_i (q) + \beta^{-1} \sum_{j \ne i} \chi_{ij} \delta
  \phi_j + \gamma,
\end{equation}
where the second term accounts for the mean-field interaction between
$i$ and $j$ monomers, and $\gamma$ is a potential required to assure
the incompressible condition
\begin{equation}
  \label{eq:incompressible}
  \sum_i \delta \phi_i (q) = 0.
\end{equation}

The random phase approximation assumes that the density response
$\delta \phi_i$ is given by the effective potential,
\begin{equation}
  \label{eq:phi_S}
  \delta \phi_i (q) = - \beta \sum_{j} S_{ij}(q) u_j^{\mathrm{eff}}(q),
\end{equation}
where $S_{ij}(q)$ is the Fourier transform of the density-density
correlation when the external potential vanishes.

Equations (\ref{eq:phi_tildeS})-(\ref{eq:phi_S}) form a set of
simultaneous equations for the unknowns $\delta \phi_i$ and
$\gamma$.
By solving these equations, the correlation functions $\tilde{S}_{ij}$
can be found in terms of $S_{ij}$ and $\chi_{ij}$.
The final results are lengthy and details can be found
in the work of Ijichi and Hashimoto\cite{Ijichi1988}.

The free energy of AB/C blends can be written as a Landau expansion
about the homogeneous state in terms of the density fluctuations
$\delta\phi_i$,
\begin{eqnarray}
\label{eq:2nd_fE}
\frac{F- F_{\mathrm{hom}}}{(\rho_0 V / \beta N)} && = \frac{1}{2! (2\pi)}
\int \tilde{S}^{-1}_{ij} (q) \delta\phi_i(q) \delta\phi_j(-q)
\mathrm{d} q + \cdots,  \nonumber \\
&& = \frac{1}{2! (2\pi)} \int \lambda_k (q) |\delta\psi_k(q)|^2
\mathrm{d}q + \cdots,
\end{eqnarray}
where $\tilde{S}^{-1}_{ij} (q)$ is the inverse of the correlation
function $\tilde{S}_{ij} (q)$.
Here we have neglected terms with order higher than two, and the
second-order term can be further written in a quadratic form, where
$\lambda_k(q)$ are eigenvalues of matrix $\tilde{S}^{-1}_{ij}(q)$.
The stability of the homogeneous phase depends on the sign of
eigenvalues $\lambda_k(q)$.
When $\lambda_k(q)>0$, the contribution of any fluctuations to the
free energy is always positive, so the homogeneous phase is stable.
When $\lambda_k(q)<0$, the fluctuations reduce the free energy
and the homogeneous phase is unstable.

Normally, the inverse of the correlation function $\tilde{S}^{-1}_{ij}(q)$
is a 3$\times$3 matrix for the AB/C blends.
The incompressible condition reduces the order of the matrix by one.
The spinodal line is determined by the condition that the smaller
eigenvalue goes to zero.
Typical plots of $\lambda_k(q)$ are shown in Figure \ref{fig:lambda}.
In general, one of the eigenvalues $\lambda_1(q)$ is always positive,
while the other one $\lambda_2(q)$ approaches zero when $\chi_{AC}N$
changes.

\begin{figure}[htp]
  \centering
  \includegraphics[width=0.9\columnwidth]{fig1.eps}
  \caption{
    Plots of eigenvalues $\lambda_k(q)$ for (a) $\kappa=1.0$,
    $f_A=0.2$, $\phi_H=0.8$, $\chi_{AB}N=15$, $\chi_{BC}N=0$ and a
    range of $\chi_{AC}N$ values (26.6 $\sim$ 28.6), and (b) $\kappa=1.0$,
    $f_A=0.2$, $\phi_H=0.2$, $\chi_{AB}N=15$, $\chi_{BC}N=0$ and a
    range of $\chi_{AC}N$ values (25.0 $\sim$ 26.0). The insets show
    the positive eigenvalue $\lambda_1(q)$. Variations of
    $\lambda_2(q)$ with $\chi_{AC}N$ are shown, but they are not
    visible for $\lambda_1(q)$. The unit of the wave vector $q$ is
    $R^{-1}_g$, where $R_g=\sqrt{Nb^2/6}$ being the radius of
    gyration.
  }
  \label{fig:lambda}
\end{figure}

The macrophase separation is characterized by $\lambda_2(q)
\rightarrow 0$ at $q=0$.
This is shown in Figure \ref{fig:lambda}(a) for blends with
$\kappa=1.0$, $f_A=0.8$, $\phi_H=0.2$, $\chi_{AB}N=15$,
$\chi_{BC}N=0$ and different $\chi_{AC}N$ values.
The eigenvalue $\lambda_2(q)$ has a minimum at $q=0$, and the minimum
value approaches zero when $\chi_{AC}N$ increases.
When $\lambda_2(q)$ becomes negative, any small density fluctuations
with $q=0$ decrease the free energy, leading to a growth of
fluctuations with macroscopic wavelength.
This corresponds to a macrophase separation between the diblock-rich
phase and homopolymer-rich phase.

On the other hand, the diblock copolymers in the blend introduce
the possibility of microphase separation.
A microphase transition is characterised by the eigenvalue
$\lambda_2(q) \rightarrow 0$ at some finite $q^*>0$.
This is shown in Figure \ref{fig:lambda}(b) for
blends with $\kappa=1.0$, $f_A=0.2$, $\phi_H=0.2$, $\chi_{AB}N=15$,
$\chi_{BC}N=0$ and different $\chi_{AC}N$ values.
The Fourier mode with nonzero wave number $q^*$ becomes unstable upon
increasing $\chi_{AC}N$, leading to the formation of ordered structure
with length scale of $(q^*/2\pi)^{-1}$.
This is in contrast to Figure \ref{fig:lambda}(a) where the Fourier
mode $q=0$ is destabilized first.

The six parameters $(\kappa, f_A, \phi_H, \chi_{AB}N, \chi_{BC}N,
\chi_{AC}N)$ characterising the AB/C blends lead to a huge phase space.
Some restrictions are needed so that the phase behavior can be described.
We will keep $\kappa=1.0$ for the RPA calculation, which means the
homopolymer C has the same degree of polymerization as the diblock
copolymer AB.
Furthermore, we will assume $\chi_{BC}N=0$, which represents the case
where the A/C interaction is much stronger than the B/C interaction.

Figure \ref{fig:xABN}(a) shows a typical phase diagram in the
$\phi_H$-$\chi_{AC}N$ plane. The parameters are $f_A=0.2$ and
$\chi_{AB}N=2$.
The solid lines and dotted lines represent, respectively, the
stability limits for the macrophase separation transition
$(\chi_{AC}N)_{\mathrm{macro}}$ and microphase separation transition
$(\chi_{AC}N)_{\mathrm{micro}}$.

\begin{figure}[htp]
  \centering
  \includegraphics[width=0.9\columnwidth]{fig2.eps}
  \caption{
    Phase diagrams for blends with parameters $\kappa=1.0$,
    $f_A=0.2$, $\chi_{BC}N=0$ and (a) $\chi_{AB}N=2$, (b)
    $\chi_{AB}N=30$.  The solid and dotted lines represent the
    stability limits for macrophase and microphase separation
    transition, respectively. Regions of macrophase separation,
    microphase separation and disordered states are labeled by
    Macrophase, Microphase and DIS.
  }
  \label{fig:xABN}
\end{figure}

The blends are disordered around $\chi_{AC}N=0$ and $\phi_H=1$,
and ordered phases appear at both $\chi_{AC}N>0$
and $\chi_{AC}N<0$.
In the region where $\chi_{AC}N>0$, increasing $\chi_{AC}N$
induces an instability to either macrophase separation or microphase
separation, depending on the blend composition and
copolymer asymmetry.
For blends with a minority of homopolymers, microphase separation
occurs first when $\chi_{AC}N$ is increased.
However, when the composition of the homopolymers increases to certain
value, the blend undergoes macrophase separation when $\chi_{AC}N$ is
increased.
The critical composition for blends with $f_A=0.2$
is $\phi_H \approx 0.2$.
The shape of the stability lines also suggests that, for
small $\phi_H$ value, both $(\chi_{AC}N)_{\mathrm{macro}}$
and $(\chi_{AC}N)_{\mathrm{micro}}$ decrease with increasing
$\phi_H$, while $(\chi_{AC}N)_{\mathrm{macro}}$ increases
with increasing $\phi_H$ at large $\phi_H$ value.
The former case suggests that the composition of the
diblock copolymer in the blend
suppresses the phase transition, which is known as the
compatibilizing effect of the block polymers \cite{Tanaka1988}.

On the other hand, the microphase separation also occurs
in the region where $\chi_{AC}N$ is negative.
Since the interaction between the blocks $\chi_{AB}N=2$, the pure
diblock copolymers are in the disordered state.
The stability line for the microphase separation approaches $\phi_H=0$
axis infinitely close when $\chi_{AC}N$ has a large negative value.
It is interesting that for a homogeneous diblock copolymer melt,
adding a small amount of homopolymers C which has a strong
attractive interaction with one of the blocks will induce the phase
separation.
Upon increasing $\phi_H$, $(\chi_{AC}N)_{\mathrm{micro}}$ increases
sharply at first, then decreases after $\phi_H \approx 0.25$.

A similar phase diagram for blends with $\chi_{AB}N=30$ is shown in
Figure \ref{fig:xABN}(b).
In this case, the pure diblock copolymers are in the ordered state.
This leads to the convergence of the two microphase separation regions
at $\chi_{AC}N>0$ and $\chi_{AC}N<0$.

Another perspective to understand the phase transition is
to plot the phase diagram in the $\phi_H$-$f_A$ plane
for fixed interaction parameters.
Figure \ref{fig:xACN} shows phase diagrams for blends with
$\chi_{AB}N=2$ and different values of $\chi_{AC}N$.
They can be viewed as cross-sections pictures of
Figure \ref{fig:xABN}(a) at different values of $\chi_{AC}N$.
At $\chi_{AC}N=30$, because of the strong
repelling interaction between A/C, large region of macrophase
separation exists, while a small region of microphase separation
occurs near the $\phi_H=0$ axis.
As $\chi_{AC}N$ decreases, the macrophase separation region shrinks
and eventually disappears at negative value of $\chi_{AC}N$.
At the same time, a closed-loop microphase separation region
appears, as can be seen from Figure \ref{fig:xACN}(c) and
\ref{fig:xACN}(d).
Qualitatively, this closed immiscible loop corresponds to the one
observed in experiments \cite{Chen2008}.

\begin{figure}[htp]
  \centering
  \includegraphics[width=0.9\columnwidth]{fig3.eps}
  \caption{
    Phase diagrams for AB/C blends in $\phi_H$-$f_A$ plane.
    The parameters are $\kappa=1.0$, $\chi_{AB}N=2$ and
    $\chi_{BC}N=0$. The solid and dotted lines represent the
    transitions for macrophase and microphase separation,
    respectively.
  }
  \label{fig:xACN}
\end{figure}

\section{Self-Consistent Field Theory}

Because of its simplicity, random phase approximation provides a
convenient method to calculate the order-disorder transition for
various parameter sets, but it is difficult to apply RPA to the
order-order transition.
On the other hand, self-consistent field theory has been proven a
powerful method to determine the microstructures of polymer blends
\cite{Matsen1995, Matsen1995a, Janert1998, Matsen1994,
  Shi2004_chapter, Fredrickson}.
Therefore, it is desirable to apply self-consistent field theory to
the study of the phase behavior of AB/C blends.

In the framework of self-consistent field theory, the system that
consists of many interacting diblock copolymer/homopolymer
chains is replaced by the problem of an ideal Gaussian chain
in an averaged effective mean-field potential which depends on
the position of the chain.
Once the mean-field potential is specified, the thermodynamics
properties of the system, such as the partition function and monomer
densities, can be expressed in terms of the chain propagators,
which are related to the potential by a modified diffusion equations.
From the monomer densities, a new mean-field potential can be
constructed.
The procedure results a closed set of equations that can
be solved self-consistently using numerical methods.
Once the self-consistent solutions are reached, the free energy
can be estimated for various ordered structures.
A phase diagram is constructed by finding the morphology with the
lowest free energy.
In this work, the calculation is performed in the grand-canonical
ensemble, and the self-consistent equations are solved using
the spectral method \cite{Matsen1994,Laradji1997, Shi2004_chapter}.

For simplicity, we consider only the classical phases in the current
study: lamellae (LAM), cylinders on a hexagonal lattice (HEX),
and spheres on a body-centered cubic lattice (BCC).
Complex structures, such as close-packed spheres,
perforated lamellae and bi-continuous cubic phases,
can also occur for certain parameters \cite{Matsen1995}.
These non-classical phases were found only in narrow regions
between the classical phases.
In this study, we are more interested in the evolution of
the phase diagram by varying different parameters,
therefore we restrict ourselves to the three classical phases.

Figure \ref{fig4}(a) shows a phase diagram in the $\phi_H$-$f_A$ plane
for blends with $\kappa=1.0$, $\chi_{AB}N=11$, $\chi_{BC}N=0$ and
$\chi_{AC}N=-30$.
In this case, the value of $\chi_{AB}N$ is large enough so the diblock
copolymer melt is in an ordered state.
The results should converge to the pure diblock results as
the homopolymer concentration goes to zero, which is the case as
shown in Figure \ref{fig4}(a).
The phase behavior shown in Figure \ref{fig4}(a) is typical for the
case where the homopolymers attract strongly to one of the blocks
($\chi_{AC}N=-30$).
This attractive interaction drives the C homopolymers to the
A-domains, leading to larger regions of ordered phases for mediated
homopolymer concentrations.
For comparison, a phase diagram for the blends with $\kappa=1.0$,
$\chi_{AB}N=11$, $\chi_{BC}N=12$ and $\chi_{AC}N=0$ is presented in
Figure \ref{fig4}(b).
Here the parameters are chosen in such a way that the C monomers
accumulate inside the A-rich region for both cases.
Figure \ref{fig4}(b) is similar to the results of AB/A blends
from Matsen \cite{Matsen1995a} because the interaction parameters
$\chi_{AB}N$ and $\chi_{BC}N$ are close to each other, thus the system
resembles the AB/A blends.

\begin{figure}[htp]
  \centering
  \includegraphics[width=0.65\columnwidth]{fig4.eps}
  \caption{
    Phase diagrams of AB/C blends with parameters $\kappa=1.0$,
    $\chi_{AB}N=11$, $\chi_{BC}N=0$, and (a) $\chi_{AC}N=-30$, (b)
    $\chi_{AC}N=12$. The superscripts of HEX and BCC phase denote the
    components that form the cylinders and spheres near the lattice
    centers. There are regions of 2-phase coexistence between the
    ordered phases.
  }
  \label{fig4}
\end{figure}

These two phase diagrams display similar features when the homopolymer
concentration is small.
In this region, the majority of the blend is diblock copolymers and
adding small amount of homopolymers should preserve the morphologies.
When the homopolymer concentration becomes large, these two phase
diagrams exhibit different phase behavior.
For the case shown in Figure \ref{fig4}(b), where the interaction
parameter $\chi_{BC}N$ is positive, two possible scenarios of phase
behavior appear.
When $f_A$ is large, only one disordered phase is stable.
The blend tends to undergo unbinding transition where the spacing of
the ordered structure increases and eventually diverges at certain
homopolymer concentration \cite{Matsen1995, Matsen1995a, Janert1998}.
When $f_A$ is small, macroscopic phase separation becomes an option.
Adding more homopolymers induces a macrophase separation transition,
in which the blend separates into copolymer-rich and homopolymer-rich
regions.
On the other hand, for the case shown in Figure \ref{fig4}(a), where
$\chi_{AC}N$ has a large negative value, only one disordered phase is
permitted.
When the homopolymer concentration is large, the blends exhibit neither
the unbinding transition nor the macrophase separation.
This behavior is due to the strong attractive interaction between the
A and C monomers.
As the homopolymer concentration is increased close to unity, both
cases reach a disordered phase.

When all three binary pairs are miscible, the AB/C blends exhibit
another type of phase behavior.
Figure \ref{fig5} shows a typical phase diagram for this case with
$\kappa=1.0$, $\chi_{AB}N=2$, $\chi_{BC}N=0$ and $\chi_{AC}N=-40$.
In this case the blends are in a disordered phase at $\phi_H=0$ and
$\phi_H=1$.
Ordered phases occur in a closed-loop region, as indicated by the RPA
analysis.
Inside the closed-loop, different ordered structures are found.
The order-order transitions between these structures are controlled
largely by the homopolymer concentration $\phi_H$.

\begin{figure}[htp]
  \includegraphics[width=0.65\columnwidth]{fig5.eps}
  \caption{
    Phase diagram of AB/C blends with parameters
    $\kappa=1.0$, $\chi_{AB}N=2$, $\chi_{BC}N=0$ and
    $\chi_{AC}N=-40$. The dotted line shows the RPA result.
  }
  \label{fig5}
\end{figure}

There are two critical points at which all ordered phases
converge on the order-disorder transition boundary.
For the parameters used here, one point is located at
($\phi_H=0.083$, $f_A=0.58$), and the other one at ($\phi_H=0.33$,
$f_A=0.21$).
The order-disorder transition is a second-order transition at these two
critical points, while the transition is first-order elsewhere.
The nature of the order-disorder transition (ODT) can be understood by
considering the third-order term in the free energy expansion.
A first-order phase transition occurs when a non-zero third-order term
is present.
In the case of a phase transition from the disordered phase to the BCC
phase, the third-order term does not vanish in general.
Therefor a first-order ODT is expected.
At the critical points, the ODT corresponds to a direct transition
from the disordered phase to a lamellar phase.
In this case the symmetry of the lamellar phase ensures the vanishment
of the third-order term, resulting in a second-order ODT
\cite{Wang2009}.

It is important to point out the limitation of the present theory.
The mean-field approach used here approximates the fluctuating
potential by a thermal averaged potential.
This assumption becomes inaccurate near the order-disorder transition,
where the fluctuations are large.
The fluctuations can shift the position of the phase boundary,
and may change the second-order ODT into a weakly first-order transition
\cite{Fredrickson1987, Kielhorn1997}.

When the homopolymer concentration is increased, the AB/C blends
change from a disordered phase to BCC, HEX and LAM phases.
This sequence of phase transition can be understood by examining
how homopolymers are distributed in the diblock melt.
Since the interaction between A and B are at $\chi_{AB}N=2$, which is
well below the ODT value of 10.5 for symmetric diblocks, the pure
diblock copolymers are in a disordered state.
When small amount of homopolymers are added to the system, due to
their strong attraction to A-blocks, the homopolymers are distributed
around the A-blocks, resulting in an effective segregation of the A-B
blocks.
Ordered phases emerge when this effective segregation becomes strong
enough.
Another way to picture this effect is to take the homopolymers as the
core-forming agents of micelles in a diblock copolymer melt.
The appearance of the spherical phase as the homopolymers are added
can be regarded as the ordering of these micelles.
The key observation here is that the reduction of interaction energy
from A-C segregation is sufficient to overcome the entropy loss.
At the strong-segregation limit, a similar mechanism for the formation
of reverse structures has been discussed by Semenov
\cite{Semenov1993}.

At higher homopolymer concentration, the volume of A/C domain increases.
The packing requirement of larger A/C domains leads to a change of the
interfaces between A/C and B, such that the interfaces are curved more
towards the B-domain.
This mechanism lead to order-order phase transitions from BCC to HEX,
and then from HEX to LAM phases.
After the LAM structure, adding more homopolymers induces the phase
transition to HEX, and then to BCC, where the HEX
and BCC both have B-blocks as the central components.
Eventually, a disordered phase is reached when sufficient amount of
homopolymers are added.

In order to explore the effect of the A/C interactions, phase diagrams
are constructed for different A/C interactions, either by changing the
molecular-weight of C homopolymers or by changing the value of the
Flory-Huggins parameter $\chi_{AC}$.
Figure \ref{fig6}(a), \ref{fig5} and \ref{fig6}(b) show the
evolution of the phase diagrams with increasing $\kappa$
($\kappa=0.5$, $1.0$ and $1.5$).
Alternatively, the phase diagrams in Figure \ref{fig7}(a),
\ref{fig5} and \ref{fig7}(b) demonstrate the progression as
$\chi_{AC}N$ decreases ($\chi_{AC}N=-35$, $-40$ and $-45$) at fixed
$\kappa$.
It is obvious that the qualitative feature of the phase diagram stays
the same in these phase diagrams.
The main difference is the size of the closed-loop ordered phase region.
Increasing the interaction will increase the area of the parameter
space in which the blend is ordered.

\begin{figure}[htp]
  \includegraphics[width=0.65\columnwidth]{fig6.eps}
  \caption{
    Phase diagrams of AB/C blends with parameters
    $\chi_{AB}N=2$, $\chi_{BC}N=0$, $\chi_{AC}N=-40$ and
    (a) $\kappa=0.5$, (b) $\kappa=1.5$.
  }
  \label{fig6}
\end{figure}

\begin{figure}[htp]
  \includegraphics[width=0.65\columnwidth]{fig7.eps}
  \caption{
    Phase diagrams of AB/C blends with parameters $\kappa=1.0$,
    $\chi_{AB}N=2$, $\chi_{BC}N=0$, and (a) $\chi_{AC}N=-35$, (b)
    $\chi_{AC}N=-45$.
  }
  \label{fig7}
\end{figure}

Experimentally, several groups had studied blends with attractive
interactions \cite{Chen2008, Tirumala2008}.
In Ref. \cite{Chen2008}, Chen et al. studies the phase diagrams of
poly(vinylphenol-\emph{b}-methyl methacrylate)/
poly(vinylpyrrolidone) (PVPh-\emph{b}-PMMA/PVP) blends, where all
three binary pairs,
PVPh/PMMA, PMMA/PVP and PVP/PVPh, are miscible.
Their setup closely resembles the blends studied in this work.
They found a closed-loop microphase separation region
surrounded by disordered phases.
The three classical phases were also observed inside the closed-loop.
The position of the closed-loop is similar to our theoretical
prediction.
Furthermore, the transition sequence of ordered phases from their
experiments is consistent with our theoretical phase diagrams.

In a slightly different experiment setup \cite{Tirumala2008}, Tirumala
et al. studied a poly(oxyethylene-oxypropylene-oxyethylene)
triblock copolymer/poly(acrylic acid) blend (PEO-PPO-PEO/PAA),
where PAA interacts selectively to the end-block PEO.
Upon increasing homopolymer concentration, they observed a phase
sequence of disordered phase to lamellae, then to cylinders consisted
of PPO, then back to disordered phase.
This transition sequence is again consistent with our theoretical
predictions.

\section{Summary}

In this paper, we have investigated the phase behavior of blends
composed of AB diblock copolymers and C homopolymers.
Two theoretical methods have been employed to construct the phase
diagrams.
By using the random phase approximation, the stability limits of the
homogeneous phase are obtained.
The phase diagrams are characterized by the coexistence of macrophase
separation and microphase separation.
When the interaction between A/C is repulsive, increasing $\chi_{AC}N$
will induce the transition from disordered phase to ordered phase, and
the property of the transition depends on the homopolymer concentration.
In general, blends with low homopolymer concentration tend to undergo
microphase separation transition, whereas macrophase separation occurs
at high homopolymer concentration.
When the interaction parameter $\chi_{AC}N$ becomes attractive, the
macrophase separation disappears while the microphase separation can
still occur when the magnitude of $\chi_{AC}N$ is large.
The microphase separation is caused by the strong attraction between the
homopolymers to one of the blocks of the diblock copolymers.
The difference between the A/C and B/C interactions leads to the spatial
separation of B monomers from the A/C monomers, but the chemical
connections between A and B prevent the macrophase separation.
The microphase separation manifests itself in the $\phi_H$-$f_A$
phase diagram in a closed-loop region.

The detailed morphologies inside the closed-loop are calculated
using self-consistent field theory.
The RPA results provide a guidance to explore the parameter space.
Three classical ordered phases (LAM, HEX and BCC) are included in the
current study.
Along the closed-loop, the microphase separation transition is
a first-order phase transition from disordered phase to the microphase
with the symmetry of a body-centered cubic lattice except at two
critical points.
At these two points, the mean-field approach indicates that the blends
undergo continuous phase transition from disordered phase to lamellar
phase.
When the homopolymer concentration is low, the phase sequence upon
increasing homopolymer concentration is from BCC to HEX, and from HEX
to LAM.
At high homopolymer concentration, the phase sequence is reversed.

Another interesting observation of the phase diagram is the reverse
morphology where the majority component of the diblock forms the
dispersed domains of the ordered structure when small amount of
homopolymers are added into the diblock melts.
This phenomenon is due to the fact that the attractive interaction
of A/C is much stronger than that of B/C.

The closed-loop microphase separation region has been observed in
experiment \cite{Chen2008}, and our theoretical prediction is
in qualitative agreement with the experimental result.
Phase diagrams for blends with different homopolymer lengths and
Flory-Huggins parameters are also presented.
It is observed that varying the interaction changes the size of the
closed-loop, while the general features of the phase diagram are
preserved.

\begin{acknowledgments}
This work was supported by the Natural Sciences and Engineering
Research Council (NSERC) of Canada. The computation was made possible
by the facilities of the Shared Hierarchical Academic Research
Computing Network (SHARCNET:www.sharcnet.ca).
\end{acknowledgments}


Photodoping-driven crossover in low-frequency noise in MoS2 transistors

Abstract: Transition metal dichalcogenide field-effect transistors (FETs) have been actively explored for low-power electronics, light detection, and sensing. Albeit promising, their performance is strongly limited by low-frequency noise (LFN). Here, we report on the study of LFN in MoS$_2$ FETs on SiO$_2$ substrates in ambient conditions using photodoping. Using this external excitation source allows us to access different non-equilibrium steady states and cross over different noise regimes. We observe a dependence of the noise power spectrum with the transient decay time window, approaching $1/f$-type when the system is closer to equilibrium, and identify a dependence of the LFN with channel thickness. Monolayer/bilayer devices exhibit random telegraph noise for insulating regimes and $1/f$-type Hooge mobility fluctuations (HMF) for conductive regimes. Thicker devices exhibit mainly $1/f$-type carrier number fluctuations (CNF). In the latter, we observe a photodoping-induced change from a near parabolic to a near linear dependence of the inverse $1/f$ noise amplitude above the threshold gate voltage. This change indicates a crossover in the LFN mechanism from CNF to HMF. We demonstrate that the study of conductance and noise under photodoping is an effective tool to identify dominating carrier noise mechanisms in few-atomic-layer FETs for a wide range of doping regimes.

\section{Introduction}
Collective wavelike fluctuations are ubiquitous and inherent to two-dimensional (2D) van der Waals (vdW) semiconductors, being responsible for nontrivial modifications of noncovalent interactions at the nanoscale \cite{Ambrosetti2016}. In few-layer-thick 2D vdW electrical devices, the high surface-to-volume ratio and ultimate thinness of the channel make conduction electrons particularly vulnerable to traps, ionized impurities, and changes in the scattering cross-section. These fluctuations can manifest as low-frequency noise (LFN) with power spectrum $S_I(f)$  closely following an inverse dependence with frequency $f$, $1/f^{\beta}$, where $\beta$ is a characteristic exponent. Although LFN dominates the power spectrum at low frequency, it is the main contributor to the phase noise of sensors and high-frequency operating systems due to its upconversion to high frequencies\cite{Balandin2013}. For these reasons, LFN has emerged as a key limiting factor in the performance of 2D vdW-based devices, particularly under low doping regimes \cite{Sangwan2013,Renteria2014,Kwon2014,Cho2015}. It is thus crucial to understand the processes responsible for the fluctuation of the electrical current in such devices for future applications.

The unique electrical and optical properties of ultrathin films of transition metal dichalcogenides (TMDs) have been intensively explored in few-atomic-layer field-effect transistors (FETs) \cite{Radisavljevic2015,Sarkar2015}. MoS$_2$ FETs in particular have been actively investigated for low-power electronics \cite{Radisavljevic2015,Wang2012,Kim2012}, light detection, photocurrent generation \cite{Furchi2014,Memaran2015,Buscema2015}, and sensing \cite{Perkins2013,Lin2015}.

In MoS$_2$ FETs, the presence of trapping - de-trapping processes at the channel to insulator and vacuum interfaces has been demonstrated to drive bi-exponential current relaxation\cite{Late2012}, time-dependent contributions to the electron transport characteristics\cite{Guo2015}, and to differences in the carrier density. These processes contribute to the slow relaxation of the photoconductivity in MoS$_2$\cite{Wu2015}.
In recent years, noise in mono-to-multilayer TMD FETs has been mainly described by  carrier number fluctuations, (CNF)\cite{Joo2016,Ko2016,Das2015,Lin2015,Sharma2014,Ghatak2014,Xie2014,Renteria2014,Kwon2014,Na2014,Sharma2015,Rumyantsev2015}, with some exceptional cases reporting phenomenological Hooge mobility fluctuations, (HMF)\cite{Sangwan2013,Na2014}, where $1/f$ noise is interpreted in terms of the fluctuation of the free path length of the charge carriers \cite{Hooge1969}. This percolative nature of the electron conduction has been shown to be a dominant noise mechanism in multilayer WSe$_2$ FETs \cite{Cho2015,Paul2016}. Although CNF is seen as the dominant LFN mechanism in MoS$_2$, there is no clear explanation to the microscopic physical mechanisms behind noise in the cases where HMF has been observed. It is therefore worth investigating photodoping as an external stimulus to access different low-frequency noise regimes in a set of TMD-FETs with different thicknesses.

Here we present a study of electron transport and photoconductivity in monolayer to bulk MoS$_2$ FETs to address three important questions: (i) how transient decays affect LFN in back-gated MoS$_2$ FETs, (ii) whether photodoping, by modulating the charge carrier density, can change the LFN mechanisms, and (iii) if LFN mechanisms in MoS$_2$ FETs undergo a significant change with incremental channel layer number. Furthermore, by providing an additional route to identify the physical mechanisms behind LFN in TMD FETs we pave the road to the development of alternative approaches to optimize TMD-based photodetectors and transistors.

   \begin{figure}[!h]
   \includegraphics[width=\linewidth]{Fig1.png}
    \centering
     \caption{a) Sketch of the two-point measurement setup. The MoS$_2$ channel is contacted by Ti/Au contacts, with SiO$_2$ used as backgate dielectric. The open top channel allows for the use of photodoping technique. b) Optical microscope image of the trilayer (device III) MoS$_2$ FET. Scale bar of 10 $\mu$m. c) Raman spectra for the several devices explored in this work. The $E^1_{2g}$ and $A_{1g}$ labels identify the two vibrational modes used to determine MoS$_2$ thickness. d) Sketch showing the time dependence of drain-source current, $I_{ds}$, with and without laser illumination, indicating reduced normalized current noise power under laser illumination.}
     \label{sketch}
   \end{figure}

\section{Experimental details}

We studied four MoS$_2$ FET devices with monolayer, bilayer, trilayer and bulk-like MoS$_2$ channels, henceforth identified as device I, II, III and IV, respectively. The sample preparation was carried out using high-purity bulk MoS$_2$ crystals acquired from a commercially available supplier (SPI Supplies). The MoS$_2$ FETs were fabricated on n$^+$-doped silicon dies with thermally grown 250-nm-thick SiO$_2$. The substrates were cleaned and sonicated in acetone, isopropanol, and deionized water and dried on a hotplate at 195 $^{\circ}$C. Following an all-dry viscoelastic stamping deterministic transfer procedure \cite{Castellanos2014} using polydimethylsiloxane (PDMS), MoS$_2$ flakes with different number of atomic layers were optically identified and selectively transferred onto the SiO$_2$ substrates. Standard electron-beam lithography using a double layer of poly methyl-methacrylate (PMMA, 495/950 MDa) was employed to pattern Ti(5 nm)/Au(35 nm) metal contacts. The metallization was done in an ultrahigh vacuum deposition system at a base pressure of $10^{-9}$ mbar, using electron-beam evaporation to deposit Ti and Au. The lift-off was performed in acetone. Figure \ref{sketch}a) shows the sketch of the FET electrical configuration, with MoS$_2$ channel, SiO$_2$(250 nm) dielectric, Si backgate, and Ti(5 nm)/Au(35 nm) contacts. Figure \ref{sketch}b) shows a microscopic picture of device III.

The thickness of the MoS$_2$ flakes was determined using Raman spectroscopy with a 532 nm laser line at room temperature (see Figure \ref{sketch}c). The difference between the frequency of the Raman $E^1_{2g}$ and $A_{1g}$ peaks, $\Delta (A_{1g}-E^1_{2g})$, can be used as a reliable indicator of the number of layers of the flake \cite{Li2012}. The frequencies of the peaks were determined using a double Lorentzian least square best fit. The obtained $ \Delta (A_{1g}-E^1_{2g}$) of 20.2, 22.8, 23.2, 24.9 cm$^{-1}$ are in agreement with the expected values for monolayers, bilayers, trilayers and bulk-like, respectively. The  lateral dimensions (length $L$ and width $W$) of device I were $L=3.7$ $\mu$m and $W=2.8$ $\mu$m; device II, $L=3.6$ $\mu$m and $W=4.3$ $\mu$m; device III, $L=5.6$ $\mu$m and $W=5.5$  $\mu$m; device IV, $L=52$ $\mu$m and $W=12$  $\mu$m.

Due to the relatively high resistance of the MoS$_2$ FETs, both current and current noise were measured with a Keithley 6485 picoammeter. A home-made battery designed for ultra-low noise at a bias of 1 V powered the voltage applied between the drain and the source contacts, while a gate voltage up to 80 V was applied between the substrate and the drain using a Keithley 228A voltage source. In the set of measurements performed during this study, the amplifier noise and Johnson noise were orders of magnitude below the detected noise-levels, which allows us to disregard spurious origins for the observed signals.

The current intensity time series were measured at every fixed gate during 180 s with resolution of 67 ms. The FETs were illuminated with a TOPTICA-iBeam Smart diode laser with wavelength of 487 nm and with up to 1mW of nominal output power. The maximum effective light surface density was estimated to be substantially below 1 $\mu$W/$\mu$m$^2$. The laser spot of about tens of $\mu$m in diameter covered the whole surface of the MoS$_2$ channel. All the measurements were performed at room temperature and in ambient conditions. LFN experiments were carried out by studying the current relaxation time series after steeply sweeping up the gate voltage by 2 V under two different conditions: (i) dark conditions, where no laser illumination was applied, and (ii) in the presence of laser illumination. Figure \ref{sketch}d) shows schematically how the normalized current noise varies under photodoping.

\section{Results and discussion}
\subsection{Electron transport with and without photodoping}

In the body of the manuscript, we mainly concentrate on the results obtained for devices II and III, between which a significant change in the LFN under photodoping has been observed. Some relevant complementary results for devices I and IV are provided in the supplemental materials \cite{Supplemental materials}.

We start by evaluating the DC transport with and without illumination to establish a foot-ground for the LFN studies. Figures \ref{transporte}a) and \ref{transporte}b) show the gate dependence of the drain-source current $\textit{I}_{ds}$ (transfer characteristics) with and without laser illumination.  The non-illuminated FETs exhibit n-type behavior with ON/OFF ratios of the order of $10^5-10^6$. In agreement with previous reports \cite{Late2012,Fontana2013}, the transfer characteristics of devices II and III reveals hysteretic behavior due to  current relaxation. Qualitatively similar effects are shown \cite{Supplemental materials} in Supplemental Figure 1S for devices I and IV. With laser illumination the current output of the transistor OFF state greatly increases from $10^{-12}$ to $10^{-7}$A,  while the current output at the ON state increases by a factor of two. In both cases the hysteretic behavior slightly increases, in line with previous studies\cite{Late2012}.

Devices II and III exhibit maximum field-effect mobilities of 9 and 14 cm$^2$/Vs respectively. The field-effect mobility of devices II and III are calculated from the expression $\mu_{FE}$ = $Lg_m/(WC_{ox}V_{ds})$, where $g_m$ is the terminal transconductance ($dI_{ds}/dV_g$), and $C_{ox}$ the gate capacitance per unit area, estimated to be 1.38$\times$10$^{-4}$F/m$^2$ for a 250-nm-thick SiO$_2$ dielectric, using a parallel plate model.  Ti/Au contacts to the MoS$_2$ channel provide low Schottky barriers of 0.05 eV \cite{Allain2015}, which at room temperature result in  ohmic-like output characteristics \cite{Supplemental materials} (see supplemental Figure 2S).

   \begin{figure}[!h]
    \includegraphics[width=\linewidth]{Fig2.png}
    \centering
     \caption{Transfer characteristics of the drain-source current $\textit{I}_{ds}$ as a function of the gate voltage $\textit{V}_{g}$ with and without laser illumination of a) device II and b) device III. Gate voltage sweep rate is 1 V/s. The right axes presents the corresponding gate dependence of the photoexcited carrier concentration (see text for the details).
   Plots c) and d) show the laser pulse response of the photocurrent for devices II and III, respectively,  without applied $\textit{V}_{g}$, and applied drain-source bias $\textit{V}_{ds}$ of 1 V. Blue solid line represents the time dependence of the ON/OFF incidence of illumination with laser output power of 0.1 mW. Period T = 500 s.}
     \label{transporte}
   \end{figure}

Figures \ref{transporte}c) and \ref{transporte}d) show the drain-source photocurrent generated by a laser pulse of period T = 500 s at zero gate voltage for devices II and III, respectively, under an applied drain-source bias, $\textit{V}_{ds}$ of 1 V. Exponential decay time constants of about 180 s are observed before reaching the equilibrium state, both for the ON and OFF states of the laser illumination. Similar curves for devices I and IV are shown \cite{Supplemental materials} in Supplemental Figures 3Sa) and 3Sb). The normalized variation of the pulsed photocurrent as a function of the MoS$_2$ channel thickness \cite{Supplemental materials} (Supplemental Figures 3Sc) points out at a difference between devices with increasing number of layers, with maximum photocurrent response at 2 or 3 layers.

We estimate the additional photoexcited carrier density, $\Delta N$, generated under illumination using a simplified relation between conductance, mobility, and carrier concentration, given by  $\Delta\sigma\approx e(\mu_h \Delta N_h+\mu_e  \Delta N_e)$, with $\Delta\sigma $ being the change in surface conductance, $\mu_h $ and $\mu_e$ hole and electron mobilities, and $\Delta N_h, \Delta N_e$ the change in hole and electron concentrations. Being n-doped, we assume the presence of one type of carriers only (electrons) and that for the minimum applied laser power (0.1 mW) the carrier concentration change is larger than the change in the Hall mobility\cite{Britton2013}. Figure \ref{transporte}a) and b) show the change in carrier density between dark and illuminated states for device II and III.

\subsection{Low frequency noise without photodoping}

We now turn to investigate how the LFN parameters change along the current relaxation. For this, we used the determined exponential decay time constant of about 180 s. Photocurrent relaxation of similar time scales has been reported for MoS$_2$ FETs \cite{Wu2015}, being attributed to the presence of random potentials in the device due to defects. For the noise analysis, we divided the current time series (both in dark condition and under illumination) in three periods, $P1, P2, P3$, each lasting for about 60 $s$. For each of those intervals, the noise power spectrum of the current has been analyzed separately by using the Hooge relation \cite{Sangwan2013,Hooge1969},  $S_I= \frac{\alpha I_{ds}^2}{f^{\beta}}$, where $S_I$ is the square of the module of the fast Fourier transform of the current time series expressed as a function of the frequency $f$, the source-drain current $I_{ds}$ under equilibrium, and $\alpha$ and $\beta$ characteristic Hooge parameters obtained from fits in the $0.05-5 Hz$ frequency range. When $\beta$ is close to one (i.e. roughly between 0.7 and 1.5) the noise is usually called $1/f$ noise \cite{Hooge1969}. The strong dependence of the channel resistivity with gate voltage (with a change up to 6 orders of magnitude between the ON and OFF states), requires that we fix the applied V$_{ds}$ and record continuously $I_{ds}$ flowing through the device for consecutively increasing gate voltage steps of 2 V, with current fluctuations recorded for 180 s. Supplemental Figure 2S shows \cite{Supplemental materials} that the devices are close to the Ohmic regime for the full range of gate voltages explored in this work, where $S_I$ is proportional to $I_{ds}^2$.

Figure \ref{series}a) exhibits the current time series dependence of device III under dark conditions after a steep sweep of $V_g$ by 2 V, and \ref{series}b) the corresponding gate dependence for the extracted parameter $\beta$ at P1, P2, P3. At the P3 interval, the relaxation effects are found to be negligible, and indicate that the system is close to equilibrium. Evaluating $\beta$ as the device operation approaches equilibrium (from P1 to P3), the exponent $\beta$ decreases from above 1.5 to closer to 1 (see Figure \ref{series}b), without exhibiting a significant gate dependence. The larger $\beta$ values in the presence of time dependent relaxation were also observed in off-equilibrium magnetic tunnel junctions near the switching to the antiparallel state \cite{Guerrero2002}.  This dependence of the LFN with the period of the current time series was observed in all samples. In order to address possible concerns about spectral leakage along relaxation, we analyzed the LFN data only for the periods closest to equilibrium (P3).

   \begin{figure}[!h]
   \includegraphics[width=\linewidth]{Fig3.png}
   \centering
     \caption{a) Drain-source current $\textit{I}_{ds}$ dependence with time for device III after the gate voltage $V_g$ is steeply swept up by 2V under dark conditions. The current time series corresponds to a time window of 180 s (determined from the photocurrent exponential decay time constant), divided into three periods, P1, P2, P3, of 60 s each. b) Dependence of the characteristic Hooge parameter $\beta$ with gate voltage $V_g$ at P1, P2, and P3 for device III under dark conditions. Solid line represents the ideal $\beta$ value for $1/f$-type LFN. c) Noise power spectrum measured for device II at P3 for different gate voltages under dark conditions. d) Corresponding gate voltage dependence of $\beta$ for device II under dark conditions at P3.}
     \label{series}
   \end{figure}

Focusing henceforth on the current time series period P3, device II exhibits a clear dependence of the $S_I (f)$ with gate voltage. Figure \ref{series}c) shows the noise power spectrum under dark conditions at $V_g$= 0, 40, and 70 V for device II. Plotting $S_I (f)$ in log-scale allows us to clearly identify a power dependence with frequency with Hooge parameter $\beta$ increasing for higher gate voltages. Figure \ref{series}d) summarizes the gate dependence of $\beta$ for device II.  For $V_{g} <$ 20 V, $\beta$ is close to 0, changing to  $1/f$ noise when $V_{g} >$ 40 V. These results suggest a dependence of the LFN under dark conditions with channel thickness. Still, at sufficiently high gate and close to equilibrium (P3 time window), $\beta$ is close to 1. However, for device I and II at the OFF state $\beta$ approaches 0, suggesting that a strong random telegraph noise (RTN) overcomes $1/f$- type noise. At higher gates and with increasing number of layers, the $1/f$ noise contribution overcomes this frequency independent response at low frequencies (see Figure \ref{series} b) and d)). In view of the strong decrease of the defect-assisted recombination times with decreasing number of layers in MoS$_2$ \cite{Wang2015V1,Wang2015V2}, the absence of the $1/f$ contribution at low gates for device I and II suggests that dominating generation-recombination processes are leading to a Lorentzian spectrum, where corresponding noise power spectrum tends to constant noise power values at low frequencies. The observed behavior of $\beta$ with layer number and electrostatic gating is then likely related to the interplay between two mechanisms in the MoS$_2$ monolayer to few-layer flakes: the strongly dependent recombination time scales with number of layers \cite{Wang2015V1,Wang2015V2}, and the different intrinsic doping levels of each flake, known to vary strongly with ambient conditions \cite{Kwon2014v2}.

\subsection{Tunning different noise regimes by photodoping}

Two models based on the Hooge relation can be used to describe the origins of the fluctuations in FETs exhibiting $1/f$-type power spectral density. These are the carrier mobility fluctuations (HMF) and charge number fluctuations (CNF) models \cite{Simoen1999}. In the CNF model, $S_I  \propto (V_g-V_{th})^{-2}$, with $V_{th}$ being the threshold gate voltage for the opening of conductance channels. In the HMF model, $S_I  \propto N^{-1}$, with $N$ being the carrier density. The low conductivity of MoS$_2$ FETs places it in the limiting case of weakly conducting regimes, and therefore the CNF model should suit the LFN, where the drain-source current noise power spectral density is expected to show a quadratic dependence on the gate voltage. The HMF model is usually valid for conducting regimes \cite{Hooge1969}.

In the following, we demonstrate that the combined application of gate voltage and laser illumination to our MoS$_2$ FETs, which affects the carrier density $N$ (Figure \ref{transporte}), changes also the transport conditions from $1/f$-type noise dominated by CNF to noise dominated by HMF.

Following Ref.\cite{Sangwan2013}, we consider overdrive conditions for the analysis, when $|V_g - V_{th}|>0$, and the carrier density $N$ can be approximated as $N \propto (V_{g} -V_{th})$.  We shall restrict our study to the cases where the power spectrum approximately follows $1/f$ behavior (0.7 $< \beta <$ 1.5). In order to reach specific conclusions on the physical processes responsible for the LFN, we plot the gate dependence of the inverse of the normalized noise parameter $\alpha$ for different photodoping conditions (Figures \ref{noise}a), c), e)).

   \begin{figure}[!h]
   \includegraphics[width=\linewidth]{Fig4.png}
   \centering
     \caption{Gate dependence of $\alpha^{-1}$ and $\beta$  Hooge parameters for devices II, III and IV, determined from the LFN measurements under dark conditions and with illumination. Laser power ranges from absence of illumination (dark condition referred to as "no laser") to 1mW. a) ,b) Device II. (c,d) Device III. e),f) Device IV. Solid lines in $\alpha^{-1}$ plots are fittings to the gate voltage dependence, and in $\beta$ plots represent the ideal $\beta$ value for 1/f-type LFN.}
     \label{noise}
   \end{figure}

Starting with dark conditions, the noise measurements in device I \cite{Supplemental materials} (Supplemental Figure 4S) and device II  (Figure \ref{noise}b) suggest that the transition to a sufficiently conducting regime, with $1/f$-type noise, occurs only at gates above 30-40 V. This restricts the inverse noise ($\alpha^{-1}$ vs. $V_g$) analysis to the relatively narrow range of 40 to 80 V, where the corresponding $\alpha^{-1}$ dependence shows a linear trend, indicating HMF as the driving mechanism for LFN. However, the dispersion of the normalized noise parameters has been found to be extremely large for device I \cite{Supplemental materials} (see Supplemental Figure 4S). Devices III and IV, on the other hand,  exhibit a quadratic dependence of $\alpha^{-1}$ as a function of the gate voltage (see Figs. \ref{noise}c) and \ref{noise}e), respectively). This fact, together with the fact that in the explored gate voltage range the devices show $1/f$-type noise (from the $\beta$ parameter analysis), allows us to point at CNF as the underlying physical mechanism driving the LFN\cite{Simoen1999}. These results allow us to separate the dark condition LFN in devices I to IV into two categories. More specifically, device I and II showed $1/f$-type noise driven by HMF only above some threshold gate voltage (of about 40 V for device II and 60 V for device I \cite{Supplemental materials} (see Supplemental Figures 4S and 5S)), with mainly RTN for lower gate voltages; while devices III and IV revealed approximately $1/f$ noise driven by carrier number fluctuations in the whole range of applied gates from 0 to 80 V (see Figure \ref{noise}).

Under illumination, devices I and II show a linear dependence of $\alpha^{-1} \propto (V_{g}-V_{th})$. With increased photodoping, the dependence of $\beta$ with the gate voltage changes from RTN-type, (seen under dark conditions for gate voltages lower than 40 V), to $1/f$-type across the full gate range, demonstrating how the additional photoconducting channels contribute to LFN dominated by HMF \cite{Hooge1969}. Interestingly, in device II, for the maximum illumination power of 1mW,  the drain-source current dependence with gate voltage exhibits a decrease for higher gate voltages \cite{Supplemental materials} (Supplemental Figure 6S shows this particular case), as well as a strong reduction of the normalized noise power (Fig.\ref{noise}a)). We tentatively attribute this effect to an increase in the recombination rates of the charge carriers leading to a decrease in conductance and increase in LFN. For devices III and IV, one clearly observes a transition from a quadratic dependence $\alpha^{-1} \propto (V_{g}-V_{th})^2$ to a linear dependence  $\alpha^{-1} \propto (V_{g}-V_{th})$, pointing at a crossover from carrier number fluctuations\cite{Simoen1999} to fluctuations in the carrier mobility \cite{Hooge1969}, respectively. Note that the LFN data obtained for $V_g$ below $V_{th}$ (\textit{i.e.} practically in the OFF state) is not used in our fits to extract $V_{th}$, since the McWhorter model is valid only for overdrive conditions, where $V_g >V_{th}$. Table \ref{Table} summarizes the several observations under dark and illumination conditions, electrostatic gating (for overdrive conditions), and different layer count.

\begin{table}[ht]
\centering
\caption{Summary of the LFN for devices I, II, III and IV, under dark conditions ("Dark") and under laser illumination ("Light"), for two extreme electrostactic gating regimes (low gate voltage, but still above overdrive conditions, V$_g$ $\geq$ V$_{Th}$, and at the highest gate voltages, V$_g$ $\gg$ V$_{Th}$.\newline}
\begin{tabular}{|c|c|c|c|c|}
\hline
 & \multicolumn{2}{|c|}{I, II}  & \multicolumn{2}{|c|}{III, IV}  \\
\hline
& V$_g$ $\geq$ V$_{th}$  & V$_g$ $\gg$ V$_{th}$ & V$_g$ $\geq$ V$_{th}$  & V$_g$ $\gg$ V$_{th}$ \\
\hline
Dark & RTN  & HMF & CNF  & CNF \\
\hline
Light & HMF  & HMF & HMF  & HMF \\
\hline
\end{tabular}
\label{Table}
\end{table}

The observation of RTN for devices I and II under dark conditions (and low gate voltage), while devices III and IV at the same conditions show CNF, was already discussed in section B, with the effect originating from the strong dependence of the recombination time-scales for different layer numbers \cite{Wang2015V1,Wang2015V2}. At low gate voltages, by exciting device I and II with light, the carrier density enhancement is enough to drive 1/$f$ noise, also of HMF character.

The observed crossover from CNF to HMF in device III and IV under laser illumination can be understood as a consequence of the percolative character of conductance in the random resistor network of MoS$_2$ FETs \cite{Paul2016}. Within this picture, the change in the noise microscopic mechanism driven by light from CNF to HMF reflects the crossing from a regime where transport happens via hopping or tunneling between disconnected metallic puddles at the fermi-level, in the so called "island-and-sea" representation of the carrier distribution in the MoS$_2$ flakes, to a continuum percolation, where instead of a random network of disconnected metallic puddles there is a continuum electron sea at the fermi-level.

Further analysis of the table allows us to extract one additional observation. Under sufficient electron-doping (photodoping and high electrostatic gating), all devices show HMF. Together with the fact that electrostatic gating under dark conditions is not enough to drive devices III and IV to HMF LFN (while device I and II show HMF), strongly suggests that the intrinsic doping levels of devices I and II are higher than in devices III and IV. This observation is compatible with other reports where they observe a higher carrier density for thinner devices\cite{Britton2013}.
   \begin{figure}[!h]
   \includegraphics[width=0.8\linewidth]{Fig5.png}
     \centering
     \caption{Estimated threshold voltage for devices II, III and IV as a function of the laser illumination power. The threshold voltage is determined for a 250-nm-thick SiO$_2$ dielectric.}
     \label{Threshold}
   \end{figure}

A comparison of the influence of the illumination power on $V_{th}$ (Figure \ref{Threshold})  shows that thinner devices require lower illumination power to achieve significant photodoping, which is reflected by the shift of $V_{th}$ to lower values. $V_{th}$ is determined as the equivalent field-effect electrostatic doping required, with the use of a 250-nm-thick SiO$_2$ dielectric, to change the MoS$_2$ device operation from an insulating to a more conductive regime when under the specified illumination conditions (photodoping).

Gathering the several conclusive elements for the dependence of $\beta$ and $\alpha^{-1}$ with the layer thickness, gating, and laser illumination, the observed effects arise then from a complex interplay between the several electron-doping sources (the intrinsic doping of the flakes, the photodoping, and the electrostatic doping), and the strong decrease of the recombination time scales with decreasing layer number. RTN noise gives place to 1/$f$-type HMF noise in the thinner devices (I and II) under sufficient electron-doping, while the thicker devices (III and IV) exhibit mainly 1/$f$-type CNF for overdrive conditions. When in the 1/$f$-type noise regime, we observe a crossover from CNF to HMF driven by photodoping, where by shining light the discontinuous random resistive network percolates to a continuum electron sea at the fermi level.

\section{Conclusions}

We have introduced a method to access different LFN regimes in MoS$_2$ FETs by using photodoping, and identified a constraint in the transient decay time window to perform LFN studies.  We believe this concept to be applicable in a much wider class of 2D materials-based FETs. Our results confirm the presence of frequency independent low-frequency generation-recombination noise, previously reported for monolayer MoS$_2$ FETs studied under environmental conditions\cite{Sangwan2013}, attributed to either traps in the SiO$_2$ substrate or to midgap defect states in MoS$_2$For sufficiently thick MoS$_2$ FETs (above bilayer), electrostatic gating in the dark state reveals $1/f$-type noise driven by carrier number fluctuations, in agreement with most of the previous reports \cite{Joo2016,Ko2016,Das2015,Lin2015,Sharma2014,Ghatak2014,Xie2014,Renteria2014,Kwon2014,Na2014,Sharma2015,Rumyantsev2015}.
In these conditions, by using photodoping with reasonably small laser powers, we are able to tune the origin of the conductance fluctuations from carrier number fluctuations to carrier mobility fluctuations. Our findings introduce then a versatile approach to investigate LFN in 2D vdW-based FETs, paving the way to overcome LFN limitations of TMD-based photodetectors and transistors.

\section*{ACKNOWLEDGEMENTS}
The work in Madrid has been supported by Spanish MINECO (MAT2015-66000-P)  and the Comunidad de Madrid through NANOFRONTMAG-CM (S2013/MIT-2850) grants. The work in CIC nanoGUNE has been supported by the European Union 7th Framework Programme under the Marie Curie Actions (607904-13-SPINOGRAPH), by the Spanish MINECO under Project No. MAT2015-65159-R, and by the Basque Government under Project No. PC2015-1-01.

Mesoscale and Nanoscale Physics (cond-mat.mes-hall)