  An atomistic model based on the spin-restricted extended Huckel theory (EHT)is presented for simulating electronic structure and I-V characteristics ofgraphene devices. The model is applied to zigzag and armchair graphenenano-ribbons (GNR) with and without hydrogen passivation, as well as forbilayer graphene. Further calculations are presented for electric fields in thenano-ribbon width direction and in the bilayer direction to show electronicstructure modification. Finally, the EHT Hamiltonian and NEGF (NonequilibriumGreen's function) formalism are used for a paramagnetic zigzag GNR to show2e2/h quantum conductance.
An atomistic model based on the spin-restricted extended Huckel theory (EHT) is presented for simulating electronic structure and I-V characteristics of graphene devices. The model is applied to zigzag and armchair graphene nano-ribbons (GNR) with and without hydrogen passivation, as well as for bilayer graphene. Further calculations are presented for electric fields in the nano-ribbon width direction and in the bilayer direction to show electronic structure modification. Finally, the EHT Hamiltonian and NEGF (Nonequilibrium Green's function) formalism are used for a paramagnetic zigzag GNR to show 2e2/h quantum conductance.