  Measurements have been performed of scintillation light intensities emittedfrom various inorganic scintillators irradiated with low-energy beams ofhighly-charged ions from an electron beam ion source (EBIS) and an electroncyclotron resonance ion source (ECRIS). Beams of xenon ions Xe$^{q+}$ withvarious charge states between $q$=2 and $q$=18 have been used at energiesbetween 5 keV and 17.5 keV per charge generated by the ECRIS. The intensity ofthe beam was typically varied between 1 and 100 nA. Beams of highly chargedresidual gas ions have been produced by the EBIS at 4.5 keV per charge and withlow intensities down to 100 pA. The scintillator materials used are flatscreens of P46 YAG and P43 phosphor. In all cases, scintillation light emittedfrom the screen surface was detected by a CCD camera. The scintillation lightintensity has been found to depend linearly on the kinetic ion energy per timedeposited into the scintillator, while up to $q$=18 no significant contributionfrom the ions' potential energy was found. We discuss the results on thebackground of a possible use as beam diagnostics e.g. for the new HITRAPfacility at GSI, Germany.
Measurements have been performed of scintillation light intensities emitted from various inorganic scintillators irradiated with low-energy beams of highly-charged ions from an electron beam ion source (EBIS) and an electron cyclotron resonance ion source (ECRIS). Beams of xenon ions Xe$^{q+}$ with various charge states between $q$=2 and $q$=18 have been used at energies between 5 keV and 17.5 keV per charge generated by the ECRIS. The intensity of the beam was typically varied between 1 and 100 nA. Beams of highly charged residual gas ions have been produced by the EBIS at 4.5 keV per charge and with low intensities down to 100 pA. The scintillator materials used are flat screens of P46 YAG and P43 phosphor. In all cases, scintillation light emitted from the screen surface was detected by a CCD camera.