  We demonstrate for the first time a mid infrared silicon Raman amplifier.Amplification of 12 dB is reported for a signal at 3.39 micron wavelength. Theactive medium was a 2.5 cm long silicon sample that was pumped with 5ns pulsesat 2.88 micron. The absence of the nonlinear losses which severely limit theperformance of silicon Raman devices in the near infrared combined withunsurpassed crystal quality, high thermal conductivity render silicon a veryattractive Raman medium. Such a technology can potentially extend siliconphotonics application beyond data communication in the near infrared and intothe mid infrared world of remote sensing, biochemical detection and lasermedicine.
The active medium was a 2.5 cm long silicon sample that was pumped with 5ns pulses at 2.88 micron. The absence of the nonlinear losses which severely limit the performance of silicon Raman devices in the near infrared combined with unsurpassed crystal quality, high thermal conductivity render silicon a very attractive Raman medium.