  The 1/f noise in pentacene thin film transistors has been measured as afunction of device thickness from well above the effective conduction channelthickness to only two conducting layers. Over the entire thickness range, thespectral noise form is 1/f, and the noise parameter varies as (gate voltage)-1,confirming that the noise is due to mobility fluctuations, even in the thinnestfilms. Hooge's parameter varies as an inverse power-law with conductivity forall film thicknesses. The magnitude and transport characteristics of thespectral noise are well explained in terms of percolative effects arising fromthe grain boundary structure.
The 1/f noise in pentacene thin film transistors has been measured as a function of device thickness from well above the effective conduction channel thickness to only two conducting layers.