  Point defect migration is considered as a mechanism for aging inferroelectrics. Numerical results are given for the coupled problems of pointdefect migration and electrostatic energy relaxation in a 2D domainconfiguration. The peak values of the clamping pressure at domain walls are inthe range of $10^6$ Pa, which corresponds to macroscopically observed coercivestresses in perovskite ferroelectrics. The effect is compared to mechanismsinvolving orientational reordering of defect dipoles in the bulk of domains.Domain clamping is significantly stronger in the drift mechanism than in theorientational picture for the same material parameters.
Numerical results are given for the coupled problems of point defect migration and electrostatic energy relaxation in a 2D domain configuration.