  We have studied the electronic structure of multilayers composed of a bandinsulator LaAlO$_3$ (LAO) and a Mott insulator LaVO$_3$ (LVO) by means of hardx-ray photoemission spectroscopy, which has a probing depth as large as $\sim60 {\AA}$. The Mott-Hubbard gap of LVO remained open at the interface,indicating that the interface is insulating unlike the LaTiO$_3$/SrTiO$_3$multilayers. We found that the valence of V in LVO were partially convertedfrom V$^{3+}$ to V$^{4+}$ only at the interface on the top side of the LVOlayer and that the amount of V$^{4+}$ increased with LVO layer thickness. Wesuggest that the electronic reconstruction to eliminate the polaritycatastrophe inherent in the polar heterostructure is the origin of the highlyasymmetric valence change at the LVO/LAO interfaces.
We have studied the electronic structure of multilayers composed of a bandinsulator LaAlO$_3$ (LAO) and a Mott insulator LaVO$_3$ (LVO) by means of hardx-ray photoemission spectroscopy, which has a probing depth as large as $\sim60  {\AA}$.