  The observed performances of carbon nanotube field effect transistors areexamined using first-principles quantum transport calculations. We focus on thenature and role of the electrical contact of Au and Pd electrodes to open-endedsemiconducting nanotubes, allowing the chemical contact at the surface to fullydevelop through large-scale relaxation of the contacting atomic configuration.We present the first direct numerical evidence of Pd contacts exhibitingperfect transparency for hole injection as opposed to that of Au contacts.Their respective Schottky barrier heights, on the other hand, turn out to befairly similar for realistic contact models. These findings are in generalagreement with experimental data reported to date, and show that a Schottkycontact is not merely a passive ohmic contact but actively influences thedevice I-V behavior.
We focus on the nature and role of the electrical contact of Au and Pd electrodes to open-ended semiconducting nanotubes, allowing the chemical contact at the surface to fully develop through large-scale relaxation of the contacting atomic configuration.