  Efficient injection of spin-polarized electrons into the conduction band ofsilicon is limited by the formation of a silicide at the ferromagnetic metal(FM)/silicon interface. In the present work, this "magnetically-dead" silicide(where strong spin-scattering significantly reduces injected spin polarization)is eliminated by moving the FM in the spin injector from the tunnel junctionbase anode to the emitter cathode and away from the silicon surface. Thisresults in over an order-of-magnitude increase in spin injection efficiency,from a previously-reported magnetocurrent ratio of ~2% to ~35% and an estimatedspin polarization in Si from ~1% to at least ~15%. The injector tunnel-junctionbias dependence of this spin transport signal is also measured, demonstratingthe importance of low bias voltage to preserve high injected spin polarization.
This results in over an order-of-magnitude increase in spin injection efficiency, from a previously-reported magnetocurrent ratio of ~2% to ~35% and an estimated spin polarization in Si from ~1% to at least ~15%. The injector tunnel-junction bias dependence of this spin transport signal is also measured, demonstrating the importance of low bias voltage to preserve high injected spin polarization.