  We investigate the conductance of normal-conductor/graphene/normal-conductor(NGN) junctions for arbitrary on-site potentials in the normal and graphiticparts of the system. We find that a ballistic NGN junction can displayinsulating behavior even when the charge-carrier density in the graphene partis finite. This effect originates in the different k intervals supportingpropagating modes in graphene and a normal conductor, and persists for moderatelevels of bulk, edge, or interface disorder. The ensuing conductance thresholdscould be used as an electronic tool to map out details of the graphene bandstructure in absolute k space.
We investigate the conductance of normal-conductor/graphene/normal-conductor (NGN) junctions for arbitrary on-site potentials in the normal and graphitic parts of the system.