  In this paper, we propose a THz probe technique to obtain spatially resolvedinformation about the electronic spectra inside nanowire-based FETs. Thisspectroscopic approach employs a segmented multi-gate design for the localdetection of quantum transitions between few-electron states within the FETchannel. We simulate the intra-band THz response of such devices by means of amany-body quantum approach, taking quantization and Coulomb interaction effectsinto account. The obtained simulation results demonstrate the capabilities ofthe proposed technique which go beyond the limitations of standardcharacterization methods.
This spectroscopic approach employs a segmented multi-gate design for the local detection of quantum transitions between few-electron states within the FET channel. We simulate the intra-band THz response of such devices by means of a many-body quantum approach, taking quantization and Coulomb interaction effects into account.