  We analyze the operation of a resonant detector of terahertz (THz) radiationbased on a two-dimensional electron gas (2DEG) channel with split gates. Theside gates are used for the excitation of plasma oscillations by incoming THzradiation and control of the resonant plasma frequencies. The central gateprovides the potential barrier separating the source and drain portions of the2DEG channel. Two possible mechanisms of the detection are considered: (1)modulation of the ac potential drop across the barrier and (2) heating of the2DEG due to the resonant plasma-assisted absorption of THz radiation followedby an increase in thermionic dc current through the barrier. Using the devicemodel we calculate the frequency and temperature dependences of the detectorresponsivity associated with both dynamic and heating (bolometric) mechanisms.It is shown that the dynamic mechanisms dominates at elevated temperatures,whereas the heating mechanism provides larger contribution at low temperatures,T=35-40 K.
The side gates are used for the excitation of plasma oscillations by incoming THz radiation and control of the resonant plasma frequencies. The central gate provides the potential barrier separating the source and drain portions of the 2DEG channel. Two possible mechanisms of the detection are considered: (1) modulation of the ac potential drop across the barrier and (2) heating of the 2DEG due to the resonant plasma-assisted absorption of THz radiation followed by an increase in thermionic dc current through the barrier.