  Several nanoelectronic devices have been already proved. However, noarchitecture which makes use of them provides a feasible opportunity to buildmedium/large systems. Nanoarchitecture proposals only solve a small part of theproblems needed to achieve a real design. In this paper, we propose and analyzea cell architecture that overcomes most of those at the gate level. Using thecell structure we build 2 and 3-input NAND gates showing their errorprobabilities. Finally, we outline a method to further improve the structure'stolerance by taking advantage of interferences among nanodevices. Using thisimprovement we show that it is possible to reduce the output standard deviationby a factor larger than $\sqrt{2}$ and restitute the signal levels usingnanodevices.
Using the cell structure we build 2 and 3-input NAND gates showing their error probabilities. Finally, we outline a method to further improve the structure's tolerance by taking advantage of interferences among nanodevices.