  We present an ab initio calculation of the DC conductivity of amorphoussilicon and hydrogenated amorphous silicon. The Kubo-Greenwood formula is usedto obtain the DC conductivity, by thermal averaging over extended dynamicalsimulation. Its application to disordered solids is discussed. The conductivityis computed for a wide range of temperatures and doping is explored in a naiveway by shifting the Fermi level. We observed the Meyer-Neldel rule for theelectrical conductivity with E_MNR = 0.06 eV and a temperature coefficient ofresistance, TCR ~ -2.0% K^-1 for a-Si:H. In general, experimental trends arereproduced by these calculations, and this suggests the possible utility of theapproach for modeling carrier transport in other disordered systems.
The Kubo-Greenwood formula is used to obtain the DC conductivity, by thermal averaging over extended dynamical simulation. Its application to disordered solids is discussed. The conductivity is computed for a wide range of temperatures and doping is explored in a naive way by shifting the Fermi level.