  First principles calculations based on density functional theory (DFT) areperformed to study the electronic properties of Mg acceptors in AlN at thepresence of oxygen. It is found that Mg and O tend to form complexes like Mg-O,Mg$_2$-O, Mg$_3$-O and Mg$_4$-O which have activation energies about 0.23 eVlower than that of Mg (except of the passive Mg-O). The lower activationenergies originate from the extra states over valence band top of AlN inducedby the passive Mg-O. By comparing to the well-established case of GaN, it ispossible to fabricate Mg and O codoped AlN without MgO precipitate. Theseresults suggest the possibility of achieving higher hole concentration in AlNby Mg and O codoping.
First principles calculations based on density functional theory (DFT) are performed to study the electronic properties of Mg acceptors in AlN at the presence of oxygen.