  Electronic properties of bilayer and multilayer graphene have generally beeninterpreted in terms of AB or Bernal stacking. However, it is known that manytypes of stacking defects can occur in natural and synthetic graphite; rotationof the top layer is often seen in scanning tunneling microscopy (STM) studiesof graphite. In this paper we consider a graphene bilayer with a relative smallangle rotation between the layers and calculate the electronic structure nearzero energy in a continuum approximation. Contrary to what happens in a ABstacked bilayer and in accord with observations in epitaxial graphene we find:(a) the low energy dispersion is linear, as in a single layer, but the Fermivelocity can be significantly smaller than the single layer value; (b) anexternal electric field, perpendicular to the layers, does not open anelectronic gap
In this paper we consider a graphene bilayer with a relative small angle rotation between the layers and calculate the electronic structure near zero energy in a continuum approximation.