  A spin field effect transistor (FET) is proposed by utilizing a graphenenanoribbon as the channel. Similar to the conventional spin FETs, the deviceinvolves ferromagnetic metals as a source and drain; they, in turn, areconnected to the graphene channel. Due to the negligible spin-orbital couplingin the carbon based materials, the bias can accomplishes spin manipulation bymeans of electrical control of electron exchange interaction with aferromagnetic dielectric attached to the nanoribbon between source and drain.The numerical estimations show the feasibility of graphene-based spin FET if abias varies exchange interaction on the amount around 5 meV. It was shown thatthe device stability to the thermal dispersion can provide the armchairnanoribbons of specific width that keeps the Dirac point in electron dispersionlaw.
Due to the negligible spin-orbital coupling in the carbon based materials, the bias can accomplishes spin manipulation by means of electrical control of electron exchange interaction with a ferromagnetic dielectric attached to the nanoribbon between source and drain. The numerical estimations show the feasibility of graphene-based spin FET if a bias varies exchange interaction on the amount around 5 meV.