  We report measurements of current noise in single- and multi-layer graphenedevices. In four single-layer devices, including a p-n junction, the Fanofactor remains constant to within +/-10% upon varying carrier type and density,and averages between 0.35 and 0.38. The Fano factor in a multi-layer device isfound to decrease from a maximal value of 0.33 at the charge-neutrality pointto 0.25 at high carrier density. These results are compared to theoreticalpredictions for shot noise in ballistic and disordered graphene.
We report measurements of current noise in single- and multi-layer graphenedevices.