  The coupling between $z$ valleys in the conduction band of a Si quantum wellarises from phenomena occurring within several atoms from the interface, thusruling out a theoretical description based on pure effective mass theory.However, the complexity and size of a realistic device precludes an analyticalatomistic description. Here, we develop a fully analytical multiscale theory ofvalley coupling, by combining effective mass and tight binding approaches. Theresults are of particular interest for silicon qubits and quantum devices, butalso provide insight for GaAs quantum wells.
Here, we develop a fully analytical multiscale theory of valley coupling, by combining effective mass and tight binding approaches.