  We show the evolution of Raman spectra with number of graphene layers ondifferent substrates, SiO$_{2}$/Si and conducting indium tin oxide (ITO) plate.The G mode peak position and the intensity ratio of G and 2D bands depend onthe preparation of sample for the same number of graphene layers. The 2D Ramanband has characteristic line shapes in single and bilayer graphene, capturingthe differences in their electronic structure. The defects have a significantinfluence on the G band peak position for the single layer graphene: thefrequency shows a blue shift upto 12 cm$^{-1}$ depending on the intensity ofthe D Raman band, which is a marker of the defect density. Most surprisingly,Raman spectra of graphene on the conducting ITO plates show a lowering of the Gmode frequency by $\sim$ 6 cm$^{-1}$ and the 2D band frequency by $\sim$ 20cm$^{-1}$. This red-shift of the G and 2D bands is observed for the first timein single layer graphene.
We show the evolution of Raman spectra with number of graphene layers on different substrates, SiO$_{2}$/Si and conducting indium tin oxide (ITO) plate. The G mode peak position and the intensity ratio of G and 2D bands depend on the preparation of sample for the same number of graphene layers.