  The spatial distribution of the local density of states (LDOS) at Mnacceptors near the (110) surface of p-doped InAs is investigated by ScanningTunneling Microscopy (STM). The shapes of the acceptor contrasts for differentdopant depths under the surface are analyzed. Acceptors located within thefirst ten subsurface layers of the semiconductor show a lower symmetry thanexpected from theoretical predictions of the bulk acceptor wave function. Theyexhibit a (001) mirror asymmetry. The degree of asymmetry depends on theacceptor atoms' depths. The measured contrasts for acceptors buried below the10th subsurface layer closely match the theoretically derived shape. Twoeffects are able to explain the symmetry reduction: the strain field of thesurface relaxation and the tip-induced electric field.
The spatial distribution of the local density of states (LDOS) at Mnacceptors near the (110) surface of p-doped InAs is investigated by ScanningTunneling Microscopy (STM).