  We study the Coulomb drag between two single graphene sheets in intrinsic andextrinsic graphene systems with no interlayer tunneling. The general expressionfor the nonlinear susceptibility appropriate for single-layer graphene systemsis derived using the diagrammatic perturbation theory, and the correspondingexact zero-temperature expression is obtained analytically. We find that,despite the existence of a non-zero conductivity in an intrinsic graphenelayer, the Coulomb drag between intrinsic graphene layers vanishes at alltemperatures. In extrinsic systems, we obtain numerical results and anapproximate analytical result for the drag resistivity $\rho_{\textrm{D}}$, andfind that $\rho_{\textrm{D}}$ goes as $T^2$ at low temperature $T$, as $1/d^4$for large bilayer separation $d$ and $1/n^3$ for high carrier density $n$. Wealso discuss qualitatively the effect of plasmon-induced enhancement on theCoulomb drag, which should occur at a temperature of the order of or higherthan the Fermi temperature.
The general expression for the nonlinear susceptibility appropriate for single-layer graphene systems is derived using the diagrammatic perturbation theory, and the corresponding exact zero-temperature expression is obtained analytically.