  We present an atomistic three-dimensional simulation of graphene nanoribbonfield effect transistors (GNR-FETs), based on the self-consistent solution ofthe 3D Poisson and Schroedinger equation with open boundary conditions withinthe non-equilibrium Green's Function formalism and a tight-binding hamiltonian.With respect to carbon nanotube FETs, GNR-FETs exhibit comparable performance,reduced sensitivity on the variability of channel chirality, and similarleakage problems due to band-to-band tunneling. Acceptable transistorperformance requires effective nanoribbon width of 1-2 nm, that could beobtained with periodic etching patterns or stress patterns.
We present an atomistic three-dimensional simulation of graphene nanoribbon field effect transistors (GNR-FETs), based on the self-consistent solution of the 3D Poisson and Schroedinger equation with open boundary conditions within the non-equilibrium Green's Function formalism and a tight-binding hamiltonian.