  We study the effects of polarizable substrates such as SiO2 and SiC on thecarrier dynamics in graphene. We find that the quasiparticle spectrum acquiresa finite broadening due to the long-range interaction with the polar modes atthe interface between graphene and the substrate. This mechanism results in adensity dependent electrical resistivity, that exhibits a sharp increase aroundroom temperature, where it can become the dominant limiting factor of electrontransport. The effects are weaker in doped bilayer graphene, due to the moreconventional parabolic band dispersion.
We study the effects of polarizable substrates such as SiO2 and SiC on the carrier dynamics in graphene.