  We present a simple and scalable technique for the fabrication of solutionprocessed & local gated carbon nanotube field effect transistors (CNT-FETs).The approach is based on directed assembly of individual single wall carbonnanotube from dichloroethane via AC dielectrophoresis (DEP) onto pre-patternedsource and drain electrodes with a local aluminum gate in the middle.Local-gated CNT-FET devices display superior performance compared to globalback gate with on-off ratios 10^4 and maximum subthreshold swings of 170mV/dec. The local bottom-gated DEP assembled CNT-FETs will facilitate largescale fabrication of complementary metal-oxide-semiconductor (CMOS) compatiblenanoelectronic devices.
The approach is based on directed assembly of individual single wall carbon nanotube from dichloroethane via AC dielectrophoresis (DEP) onto pre-patterned source and drain electrodes with a local aluminum gate in the middle.