Effect of rapid thermal annealing for the compositional disordering of Si-implanted AlGaAs/GaAs superlattices
We have investigated the effect of rapid thermal annealing (RTA) for the compositional disordering of Si‐implanted AlGaAs/GaAs superlattices (SL) in comparison with that of furnace annealing (FA). By using RTA (970 °C, 10 s), the implantation damage can be eliminated without disordering the SL, while the disordering occurs when FA (850 °C, 30 min) is used. Secondary ion mass spectrometry analyses show that the difference between RTA and FA is due to the extent of Si diffusion into the AlGaAs/GaAs SL.
Analyzed numerically are the localized strain of polycrystalline materials subjected to quasi-static loading. The objective is to study the peculiarities associated with the deformation process close to the stress concentrators such as holes, notches and interfaces of internal structure. Analytical results show that geometry and/or heterogeneous internal structure of material together with the action of maximum shear result in the development of a system of plastically deformed shear bands. Shears and rotations in the regions of strain localization are found to be higher than in other parts of the specimen while rotations are more sensitive to localization.