Homogeneous Nucleation of Epitaxial CoSi2 and NiSi in Si Nanowires
Homogeneous nucleation is rare except in theory. We observed repeating events of homogeneous nucleation in epitaxial growth of CoSi2 and NiSi silicides in nanowires of silicon by using high resolution TEM. The growth of every single atomic layer requires nucleation. Heterogeneous nucleation is prevented because of non-microreversibility between the oxide/Si and oxide/silicide interfaces. We determined the incubation time of homogeneous nucleation. The calculated and the measured nucleation rates are in good agreement. We used Zeldovich factor to estimate the number of molecules in the critical nucleus; it is about 10 and reasonable. A very high supersaturation is found for the homogeneous nucleation.
This book, which was first published in Russian in 2005, deals with the homogenization of partial differential equations (pdes) of elliptic and parabolic types. The authors study both boundary value problems posed in highly perforated domains or equations with rapidly oscillating coefficients. The standard theory of homogenization (periodic theory, uniformly elliptic oscillating coefficients) is supposed to be already known and the emphasis is put on nonstandard situations leading to multicomponent or nonlocal equations.