Corrigendum to Electrical transport and structural study of CuCr1-xMgxO2 delafossite thin films grown by pulsed laser deposition
The author regrets that during the publication of this paper an error occurred within the text of Section 3 andwithin figure. The corrected text and figure is reproduced below. Increasing the alloy percentage of Mg decreases the c-axis lattice parameter of the CuCr1− xMgxO2 phase in a basically linear fashion. Fig. 4 shows this trend, despite the fact thatMg forms a largerMg(II) cation in 6-fold coordination (with a 0.86 A radius) than the Cr(III) cation in 6-fold coordination (with a 0.75 A radius) otherwise sitting on its site. The c-axis lattice parameter is known to be almost independent of M(III) metal choice and this trend is thus likely a verification of the presence of holes sitting on Cu(I) lattice sites.
Abstract The Imagewise charge storage in a novel EIC design containing an extra As 2 Se 3 layer for electron storage is examined by time-of-light measurements and scanned laser beam readout. Longitudinal and lateral diffusion of electrons was found negligible in the time scale of hours. The activation energy for charge diffusion was roughly estimated to be 0.7 eV.