Single‐electron trapping and telegraph noise in μm‐sized MOSFETS
The microscopic trapping processes involved in 1/f noise are analyzed by studying the average switching times in the random telegraph signals of μm‐sized MOSFETs. The single‐electron transfer into and out of interface traps shows strongly temperature‐activated time constants. The results are interpreted by thermionic emission across the interface and by a free‐energy change in the capacitor system. The behavior is demonstrated on the example of two typical interface traps showsing differing time constant dependencies on the gate bias voltage. The key information is obtained from the trap energy shift with applying a substrate bias voltage to the MOSFET.
Abstract : The report is written in answer to letters from radio amateurs asking about the impact of microelectronics on military techniques. Because the electronic equipment on rockets as well as aircraft is so bulky, various methods of miniaturization must be used. These methods, including compact mounting methods, thin film circuitry, solid state circuitry, are discussed in some detail. Included in this discussion are qualitative explanations of the construction of circuit elements in thin film and solid state devices. The subject is treated in a general way, with no hint of the type of equipment peculiar to Soviet practice. (Author)