Correlation between bias stress instability and phototransistor operation of pentacene thin-film transistors
The authors study the use of pentacene thin-film transistors as phototransistors. The shift in turn-on voltage (Von), responsible for the high photosensitivity of these devices, is shown to be strongly dependent on illumination time and applied gate voltage. The time dependence of this process is similar to the shift in Von during bias stress experiments in the dark, and illumination can simply be accounted for as an acceleration factor for bias stress instability. By comparing the characteristics of devices with different gate dielectrics, trapping of electrons by OH groups at the gate dielectric interface is indicated as a main origin for these shifts.
A novel microstrip bandpass filter with four transmission zeros is proposed. Four transmission zeros close to the passband are realized to improve the selectivity for the passband. A sixth- order passband is realized with two shorted stubs and a dual-mode ring resonator. The transmission zeros near the passband can be adjusted conveniently by only changing the characteristic impedances of the coupled lines. For demonstration, a planar bandpass filter (3-dB bandwidth 21.9%) was designed and fabricated.