The first photometric study of semi-detached eclipsing binary V504 Cyg
Abstract In this paper, we analyze photometry of V504 Cyg semi-detached binary system. For this purpose, after taking the photometric data, primary and secondary minimum and new epoch were calculated. The period of system is found to be 0.3516916 day. Analysis of light curve was performed by PHOEBE software which uses last version of Wilson–Devinney code. 3D model of the system is worked out using Binary Maker software. The O’Connell effect in the light curve is observed and an accurate model of this system is presented by introducing four spots on the components.
This paper describes how to characterize the pad structure embedding silicon devices directly in terms of scattering parameters. The new procedure accounts for distributed effects associated with the structure itself (e.g. the so-called dangling source leg effect) and other coupling effects. The proposed approach is key to extending device characterization into the mm-wave range. The procedure makes use of standard structures typically available on silicon tiles without calling for measurements of additional structures. Further, it does not rely on an equivalent circuit of the structure for its characterization. The procedure is demonstrated by measurements of structures available on the Tower-Jazz semiconductor SBC13 SiGe BiCMOS process. Results acquired over the broad range of frequencies from 2 to 50GHz will be presented and discussed.