A comparative study of compact finite volume methods for the 3-D diffusion equations with finite difference ADI and SOR
Recently developed Compact Finite Difference scheme (CPT) is applied to two dimensional diffusion equations. The relative merits of CPT-ADI are investigated with other computational schemes such as finite difference method ADI (FDM-ADI) and FDM-SOR. The numerical results obtained from these three approaches are compared to known analytical solutions. The primary interest of this study lies on vectorization and parallel processing. According to our results shown in tables 1 CPT-ADI is found to be superior scheme with regards to accuracy, than both FDM-ADI and FDM-SOR. It is also fastest algorithm than both FDM-ADI and FDM-SOR as it is evident from CPU times.
Organic contamination adsorbed on 200 mm silicon wafers was characterized using various analytical techniques. Surface hydrophobicity, apparent optical thickness and electrical surface charge are used to characterize the silicon surface state. They only give information on total organic contamination. MIR-FTIR is very sensitive for detecting CH2 and CH3 contained in organics on silicon wafers. TOF-SIMS is quite sensitive and enables some of the organics to be recognized by identifying the molecule fragments. TDGC-MS is the most relevant technique to identify organic contamination on silicon wafers as extensive identification libraries exist.