Sintering Simulation at a Scale Lower than the Grain Size
A finite 3D element model coupled with a 2D finite volume one has been developed obatained in order to study the miscrostruture evolution during the desification of a green compact obtained by powder metturgy [1]. The simulation of the process was performed on to grains considering surface diffusion of the grains, grain boundary diffusion and volume diffusion in the grains, with as source terms the radii of curvature. The stress gradients are the driving forces of sintering. The mechanical behaviour of the grains is considered as elastic in the whole temperature range of the sintering cycle.
SOI and low-k technologies are rapidly approaching production maturity. This paper highlights several challenges found when moving them from development to high-volume manufacturing. In overcoming these challenges in wafer processing and transistor development, we have achieved yield learning and performance enhancement rates equivalent to or better than conventional technologies.