The gaseous oxidation of acetone - I. The high-temperature reaction
The gaseous oxidation of acetone has been studied at temperatures between 250 and 510°C at pressures up to 450 mmHg. In contrast to earlier reports, two oxidation régimes have been discovered, separated by a region where the rate of reaction decreases as the temperature rises. This paper presents the results of a detailed study of the kinetics and products of the reaction in the high-temperature region. The reaction is autocatalytic, and a reaction scheme is proposed which accounts for the principal experimental facts. This scheme involves degenerate chain branching, in which the oxidation of formaldehyde plays an important part.
Abstract Photosensitivity based practical applications of chalcogenide glasses such as high resolution inorganic photoresists require thorough understanding of the relations between the glass structure and the etching kinetics. In this paper we report on the selective wet etching of thermally evaporated As2Se3 thin films carried out using amine based solutions. The relation between photo- and thermo-induced structural changes in thin As2Se3 films and the decrease of the etching rate, increase of the etching process' activation energy respectively, was determined.