Damage Creation in Single Crystal Silicon Induced by He Ion Implantation at Different Energies
Single crystal silicon samples were implanted at room temperature with He ions of different energies (40, 160 and 1550keV) to the same fluence of 5×10~(16) ions/cm~2. Cross-sectional transmission electron microscopy was used to study on the formation of cavities after the subsequent annealing at 800℃ for 1h. The results show that cavity band can be formed in He ion implanted samples with different energies. However, the width of the band, the size of cavities, the morphology and location of the band depend strongly on the implantation energy of He ions. The results are discussed in combination with the TRIM simulations.
A controllable impregnation of glass fibre structures used in high performance fibre reinforced cement composites can nowadays only be obtained by hand lay-up means, constraining possible structural applications of this promising composite. This paper discusses an innovative manufacturing process designed for the mechanical impregnation of textile reinforcements by a suitable cement matrix. The basic principles of this self-compacting impregnator (SCI) as well as the manufacturing of the cement based laminates will be explained. For comparison, uniaxial tensile strength and interlaminar shear strength were measured on specimens obtained by both production techniques, hand lay-up and SCI. The quality obtained with the laboratory prototype SCI is comparable with the quality obtained by hand lay-up.