Modeling of minimum surface potential and sub-threshold swing for grooved-gate MOSFETs
Abstract We present a new analytical model derived from Poisson equation for the minimum surface potential ( Φ m ) and sub-threshold swing ( S ) for grooved-gate metal oxide semiconductor field effect transistor (MOSFETs). The relationship between the groove corner radius ( r 0 ), corner angle ( α ) and device characteristic length ( λ ) is given. The model can be used to find a lower value of r 0 at which smaller potential barrier height can be achieved in grooved-gate MOSFETs compared to other planar and double-gate devices. The study confirms that the present device is resistant to potential barrier lowering, and is also considerably strong. Sub-threshold swing values of the present device are found to be lower than that of the double-gate SOI MOSFETs, confirming the same from device simulator.
Since transducer can not be directly applied to rapid start,braking and constant shift between positive and negative rotation,the paper designed the energy feedback control system based on DSP controller——TMS320LF2407A,realized the SPWM control to feedforward of electromotive force in power network of energy feedback device.The relevant control model was founded to realize the feedback of sinewave current of unit power factor and accurate control to current.