Application of a new area efficient body contact to LDMOSFET devices in silicon-on-insulator (SOI) material has been investigated using three-dimensional simulation. A comparative study of the new body contact and a conventional body-contacted structure for high voltage SOI devices is presented. Using the new body contact, current drive (IDS) was increased by 14% and current gain cut-off frequency (fT) by 10%. In addition, improved performance is achieved when comparing on-resistance (Ron) and breakdown voltage (VBR). The new body contact structure is applicable to both high-voltage planar or trench SOI and bulk devices.
Detailed experimental results are used to develop a new model for the linear region of operation of lateral DMOSFETs (LDMOSFETs) on silicon-on-insulator (SOI) that includes the influence of the buried oxide and back-gate. Back-gate biasing results in double-channel conduction and bias-dependent series resistance. Pertinent techniques for parameter extraction are presented and contrasted to those currently used in low-voltage SOI MOSFETs. The typical feature of LDMOSFETs is the significant change in series resistance as the back-gate is driven from accumulation to inversion. The model allows a clear identification of the architectural and technological parameters of the device.
We prove that groups acting geometrically on delta-quasiconvex spaces contain no essential Baumslag-Solitar quotients as subgroups. This implies that they are translation discrete, meaning that the translation numbers of their nontorsion elements are bounded away from zero.