InAs Nanoscale Islands on Si Surface: A New Type of Quantum Dots
Abstract : We study epitaxial growth of InAs on Si(100) surface using molecular beam epitaxy. We found that at moderate arsenic fluxes and substate tempeartures (470 C) the growth proceeds in Stranski-Krastanow growth mode with formation of mesoscopic dislocated clusters on top of the two-dimensional periodically-corrugated InAs wetting layer. At lower temperatures (250 C) a dense array of selof-orgarnized nanoscale InAs quantum dots with good size and shape uniformity is formed.
On the basis of regional geological characteristic,sea island were stated in distribution of Qingdao.Base on the rock feature,geological structure feature and main geological processes involved in formed sea island in Qing-dao area,the sea island in Qingdao area were divided into type tectonic processes(type Ⅰ),type magma processes(type Ⅱ),type metamorphic processes(type Ⅲ)and the geological environment of main sea island in Qingdao area were analysed.