Optical properties of solution phase deposited (As2S3)100-xGex chalcogenide thin films
Solution phase driven deposition methods such as casting or micro-molding are not much explored in amorphous chalcogenide glasses for Infrared (IR) optical component fabrication, which could be a simple and low cost alternative unlike conventional thin film deposition techniques such as vapor phase deposition methods. To use such deposition technique optimization of solution preparation conditions in order to retain the optical properties of the solute is the key factor. In this present study, we report on the dissolution kinematics of (As2S3)100-xGex (x=0, 20, 40) glasses in ethylenediamine solvent. Dynamic Light Scattering (DLS) result indicates particle size of the solution is <30nm, which is an essential requirement for the fabrication of low surface roughness films in these materials. Optical properties of the solution are discussed.
The band profiles in InGaAsP single quantum well are investigated using the model solid theory under considering of the effect of strain.The band lineups for electrons and holes are tuned by changing Ga concentration x and As concentration y in the well on condition that the concentrations in the barrier are fixed.The results indicate that the variety of concentration influences evidently the band lineups,resulting in type-Ⅰ to type-Ⅱ transformation.When the well is multilayer,parabolic potential well can expediently carry out by controlling the compositions.