An exposure device, a substrate processing apparatus and a lithography system, and device manufacturing method
The exposure apparatus (10) and the substrate processing unit (50) are connected via an in-line I/F portion (110). In addition, information on the substrate carriage is communicated in between the control unit of the exposure apparatus side and the control unit of the substrate processing unit, and both units decide their next operation that contribute to improving the processing capacity related to the wafer carriage, before actually starting the operation. Therefore, the throughput of the series of wafer processing performed by the substrate processing unit and the exposure apparatus can be improved, and as a consequence, becomes possible to improve the productivity of the device. In this case, for example, information on the predicted time or the expected time when the substrate can be received or sent out is reciprocally communicated between both units.
Abstract We study the structure and surface morphology of the 100 nm homoepitaxial LaAlO 3 films grown by pulsed laser deposition in a broad range of growth parameters. We show that there is a narrow window of growth conditions in which the stoichiometric, bulk-like structure is obtained while maintaining a 2-dimensional (2D) layer-by-layer growth mode. In our system, these optimum growth conditions are 100 mTorr background pressure with laser energy density 1.5–2 J/cm 2 . The sensitivity to growth conditions of the stoichiometry and structure of LaAlO 3 films can have a crucial role in the 2-D electron gas formed at the LaAlO 3 /SrTiO 3 interface.