Experimental study of hot carriers in small size Si-MOSFETs
Abstract Hot carrier effects in Si-MOSFETs cause serious reliability problems in VLSI circuits. While most of them have been investigated empirically, it is also important to clarify the microscopic degradation mechanism. In addition, there are other effects which can affect the device characteristics significantly and can be used to study hot carrier transport in MOSFETs. In this paper, several experimental studies associated with hot carrier effects in MOSFETs are reviewed. In particularly, hot electron energy effects are discussed, such as velocity overshoot and photo-emission in MOSFETs, and technological efforts to overcome the degradation problem in actual devices are reviewed briefly.
Abstract : The report is written in answer to letters from radio amateurs asking about the impact of microelectronics on military techniques. Because the electronic equipment on rockets as well as aircraft is so bulky, various methods of miniaturization must be used. These methods, including compact mounting methods, thin film circuitry, solid state circuitry, are discussed in some detail. Included in this discussion are qualitative explanations of the construction of circuit elements in thin film and solid state devices. The subject is treated in a general way, with no hint of the type of equipment peculiar to Soviet practice. (Author)