InP-SiO2 metal-insulator-semiconductor structure parameters investigated with DLTS and other capacitance techniques
Abstract In this paper, we report the study of a n-type InP-SiO 2 Metal-Insulator-Semiconductor structure by means of Deep Level Transient Spectroscopy and two complementary techniques : Capacitance versus Voltage and Conductance versus Frequency measurements. We have observed two bulk traps probably related to impurities in the InP crystal. Majority carrier interface states have been studied : the three methods bring similar density profiles showing a minimum value about 10 12 eV -1 cm -2 in the energy range 0.4–0.7eV below the conduction band edge. Moreover, we have detected a “missing Phosphorus” interface level at 0.3 eV below the conduction band with a density about 4 x 10 10 cm -2 .
Abstract In this work, we report Copper Sulfide (CuS) as a solution processed, inexpensive and effective hole transport layer (HTL) for efficient and low cost organic solar cells. These devices were fabricated using two most studied low band gap donor materials PTB7 and PCDTBT blended with PC71BM as an acceptor material. We have used a simplest device architect such as ITO/CuS/active layer/Al at ambient conditions. The power conversion efficiencies (PCEs) of these devices have been achieved to up to 4.32% and1.76 % for PTB7 and PCDTBT based devices respectively. Finally, we have provided a further example of solution processable CuS as an effective HTL for solution processable organic photovoltaic applications.