ESR study of the I0 atom in HIO3
A description is given of a paramagnetic center produced in single crystals of iodic acid, HIO3, when irradiated at room temperature with either x or γ rays. This center is interpreted as neutral iodine atoms, I0, trapped in the crystal. ESR studies indicate four different trapping sites that are related by the crystal symmetry. The g values, the hfs tensor, and the quadrupole interaction tensor are presented and discussed.
Abstract This paper presents a theoretical model for the behavior of solid solutions of group III and V impurities in silicon. The impurities are considered as weak electrolytes dissolved in an ionizing medium. The Fermi level, the activity coefficient and the dissociation equilibrium constants for the dopants are calculated, using Fermi-Dirac statistics, as functions of temperature and doping level. The solid solutions obey Henry's law at very low concentrations and exhibit positive deviations as the concentration is increased. Ionization of impurities or dopants as a function of their concentrations are discussed.