Solving the thermal stability problem at the HfO2/Si interface with previous N implantation
We report on the use of N implantation to produce thin, pure, uniform, and thermally stable Si3N4 buffer layers and HfO2 overlayers on Si(100) and Si(111) without silicide formation.
Our project on understanding the mechanisms of flame suppression using agents more effective than halon 1301 depends heavily on our ability to study the detailed chemistry of diffusion flames. This paper presents the details of the experimental design of the laser induced fluorescence spectroscopy equipment as well as detection schemes for OH, H, 0 radicals and FeO molecules. INSTRUMENTAL CONSIDERATIONS