Hot‐carrier light emission from silicon metal‐oxide‐semiconductor devices
Light emitted from energetic electrons and holes near the drain region of Si field‐effect transistor devices is measured spectrally resolved in the important energy range about the band gap. Using a sensitive Ge detector we examine the spectral range from 0.75 to 1.55 eV in order to identify and study the recombination of impact ionization generated electron‐hole pairs. Two distinct recombination lines are observed superposed on a continuum background.
The computer controlled Laserthermia system by the method of using double ::: channel endoscope with the contact frosted probe and a thermocouple was reported ::: previously.25 In this paper, the single channel method with the new single ::: laser delivery system was studied experimentally. Especially hyperthermal effect ::: by the newly developed Hybrid Laserthermia feedback probe(Hybrid probe) was discussed ::: comparatively with the effects by the interstitial contact probe. The Hybrid ::: probe could be possible to treat clinically more accurate Laserthermia in ::: the near future.