The effects of electron irradiation on crystals of potassium chloride
The results of an investigation on KCl show that while the electron beam undoubtedly has a marked effect on the crystals, it is possible to examine KCl in the electron microscope, and in this way, to study the changes which follow irradiation in considerable detail. Preliminary investigations suggest that point defects are created fairly readily in KCl crystals by electron irradiation. The fact that small crystals are strongly colored in the F-band by irradiation in the microscope is taken as evidence that some ionization takes place. (P.C.H.)
We review the structure and energetics of the extended defects found in ion implanted Si as a function of annealing conditions and show that the defect kinetics can be described by an Ostwald ripening process whereby the defects exchange Si atoms and evolve in size and type to minimize their formation energy. Finally, we present a physically based model to predict the evolution of extrinsic defects during annealing through the calculation of defect densities, size distributions, number of clustered interstitials and free-interstitial supersaturation. We show some successful applications of our model to a variety of experimental conditions and give an example of its predictive capabilities at ultra low implantation energies.