Research on impacts of different parameters on transient power loss of IGBT
Power loss of semiconductor devices is the critical element, reflecting efficiency of the converter system indirectly. The loss of devices is consisted of steady state loss and transient loss. This paper introduces a functional model of transient power loss for IGBT to study the impact of different parameters on transient loss. Both turn-on and turn-off processes are analyzed in detail and mathematic expressions of power loss considering stray inductance are given. Then the change laws of transient power loss of IGBT with several parameters including DC-link voltage, junction temperature of IGBT and stray inductance of IGBT loop are studied by a number of experimental results, which also verify the theoretic analysis.
For years training was evaluated with measures such as numbers of participants, number of programs, length of programs, cost of programs and content of programs. These input focused measures have to be replaced by output focused measures. The output focused measures include learning profile and whole brain approach for the learner, competency requirements for the job, management’s role before, during and after training as well as the competency of the trainer and the effectiveness of the training environment. However, to ensure that the highest possible scores for these measures can be achieved, a multidisciplinary approach is of paramount importance. The purpose of this article is to demonstrate the IAFECT™ management tool designed to ensure effective technology training. IAFECT™ is a systematic approach that involves all stakeholders. It focuses on technical competence and a high Return-On-Investment.