The role of dislocation scattering in n-type GaN films
The lateral transport in GaN films produced by electron cyclotron resonance plasma-assisted molecular beam epitaxy doped n type with Si to the levels of 1015–1020 cm−3 was investigated. The room temperature electron mobility versus carrier concentration was found to follow a family of bell-shaped curves consistent with a recently proposed model of scattering by charged dislocations. The mechanism of this scattering was investigated by studying the temperature dependence of the carrier concentration and electron mobility. It was found that in the low carrier concentration region (<1017 cm−3), the electron mobility is thermally activated with an activation energy half of that of carrier concentration. This is in agreement with the prediction of the dislocation model.
Abstract A layer of random defects in the simple cubic Ising model with nearest neighbor ferromagnetic interactions of strength J is considered. Using the real space renormalization group method we calculate defect free energy in the whole temperature range. Specifically, we analyze: the layer of diluted defects, the layer of spin-glass type defects, and the layer of mixed defects. The free energy is strongly dependent on the value of couplings between the defect and the bulk.