Fabrication of graphene with CuO islands by chemical vapor deposition.
Graphene prepared on Cu foil by chemical vapor deposition was studied as a function of post growth cooling conditions. CuO islands embedded in the graphene film were discovered and studied by scanning electron microscopy, atomic force microscopy, and X-ray photoemission spectroscopy. It is shown that nanostructured holes can be formed within a graphene film by reduction using hydrogen cooling immediately after film growth. We also observe the formation of symmetrical oxide islands in these holes. This study provides an easy way to fabricate a graphene + CuO composite, and the method may be extended to other graphene based structures.
Microstructural studies and X-ray diffraction combined with pole figure characterizations have been carried out on the melt-grown YBa2Cu3O7-x and GdBa2Cu3O7-x samples. The crystallographic orientation of the domains in melt-grown samples are highlighted based on the above studies.