Analysis of dopant metrology using scanning capacitance microscopy and transmission electron microscopy as complementary techniques
The results of physical analysis carried out on Dynamic Random Access Memory (DRAM) devices, using Scanning Capacitance Microscopy (SCM) and Transmission Electron Microscopy (TEM) to investigate specifically the dopant profile at the sidewall of the trench capacitor structures is presented here. The SCM results provide information on the dopant metrology on samples, whereas the TEM analysis, which includes junction delineation, further supports the finding of dopant distribution as well as other physical phenomena.
In this paper we study the multivariate ANOVA decomposition for $1$-periodic functions on the torus. In particular we use the integral projection operator that leads to the classical ANOVA decomposition. Relationships between the Fourier coefficients of the function and its ANOVA terms lead to special frequency index sets and give an understanding of the decomposition working in the frequency domain. Moreover, we consider the truncated ANOVA decomposition and provide error bounds for approximation in $\mathrm{L}_\infty$ and $\mathrm{L}_2$. We present an approximation method based on the truncated decomposition with regard to a superposition dimension $d_s$.