Extraction of Parasitic Parameters on Surface Acoustic Wave Device
In this study, we propose an approach to compute the parasitic parameters of an surface acoustic wave (SAW) resonator, which is fabricated on 36o YX lithium tantalate substrate using standard semiconductor processes. The measured admittances of the SAW resonator are used to calculate the corresponding counter parts by applying the Kramers-Kronig relations. The parasitic parameters are then retrieved by minimizing the errors between the calculated and measured admittances.
A paper accepted for presentation at the 1964 International Solid State Circuits Conference describes a two-stage, L-band parametric amplifier with a gain of 19 /spl plusmn/ 0.25 db over a 20% band, and a 1.5 db noise figure in the 15% band of interest. The achievement of maximum performance in a parametric amplifier of this type depends critically upon the characteristics of the associated circulators. It is felt that a discussion of the techniques used in the design of the circulator package for this amplifier might prove helpful to other designers in the field.