Conduction in ultra-thin SOI nanowires prototyped by FIB milling
This work describes a simple yet fast fabrication method to prototype silicon-on-insulator nanowires (SOINW) by using FIB milling and sacrificial oxidation on SOI substrate. Al-gated silicon wires with 8nm diameter and 50-200nm length are successfully demonstrated. The Si-wires are heavily implanted with phosphorus in between two oxidation steps, resulting in a film structure in which the hopping conduction mode occurs in the electron accumulation regime. Conduction oscillations are observed in 8nm diameter Si-wires at room temperature, in contrast with large geometry samples where no oscillations are visible even at low temperature and where the conduction appears as being temperature activated.
The book is published by Dr. Siddique Mohammed Umair (Narsee Monjee Institute of Managment Studies, Deemed University) and Dr. Nitin Parashram Gulhane (Veermata Jijabai Technological Institute). The Experimental and Numerical research work present in the book is a partial Ph.D. work of Dr. Umair. This book represents the heat transfer augmentation study of steady air jet impingement over flat plate and pin fin heat sink. The further edition of this book will carry the effect of pulse jet impingement.