Radiation-induced mismatch enhancement in 65nm CMOS SRAM for space applications
We study the Radiation-Induced Mismatch Enhancement (RIME) in 65 nm CMOS SRAM block designed for space applications. X-ray and heavy ion irradiation increase the number of non-rewriting cells.
Abstract We demonstrate that in time-resolved stimulated Raman measurements (TSRS) at specific values of the mistuning of the driving frequency with respect to the eigen frequency of the Raman mode a spectacular dip in the time response of the oscillator appears. We explain this phenomenon as an interference effect between the driving force and the excited mode. We found both qualitative and quantitative agreement between our TSRS measurements and a computer model that is based on a simple extension of the damped harmonic oscillator.