Study of the Corner Effects on Pi-Gate SOI MOSFETs
Multiple gate SOI MOSFETs can give rise to the formation of independent channels with different threshold voltages. This phenomenon is the so called corner effects. In this work, we have carried out a thorough study of the corner effects on a Pi-Gate SOI MOSFET. To get our goal, we have developed a numerical simulator that solves the 2D Schrodinger-Poisson equations self-consistently in the structure under study.
This essay provides a multi-level collaboration low-power design based on embedded processor, builds SoC (System-on-Chip) and designs a low-power SoC by register level, system level and gate level. The designed clock gating module, power management module and system program coordination can be used to realize the sleep and wake up functions on SoC. In order to realize a multi-level collaboration low-power designing, gating clock circuit can be used in circuit designing.