1. A method for optical proximity correction (OPC) model accuracy verification for a semiconductor product, the method comprising: generating a multifeature test pattern, the multifeature test pattern comprising a plurality of features selected from the semiconductor product; exposing and printing the multifeature test pattern on a test wafer under a process condition; generating an OPC model of the semiconductor product for the process condition; and comparing the test wafer to the OPC model to verify the accuracy of the OPC model.