1. A detector for both gamma-rays and neutrons, comprising: a semiconductor layer including a semiconductor material suitable for capturing gamma-rays; a glass plate in contact with the semiconductor layer; a gadolonium (Gd) converter layer in contact with the glass plate opposite the semiconductor layer for capturing neutrons; a layer of silicon PIN (p-type/intrinsic/n-type) material of suitable thickness in contact with the Gd converter layer opposite the glass plate to detect electrons produced by neutrons captured in the Gd converter layer; a cathode contact in electrical contact with the glass plate; a first anode contact in contact with the semiconductor layer; a second anode contact in contact with the silicon PIN layer; and a processor in electric contact with the first and second anode contacts, the processor being configured to cooperate with the anode contacts and the cathode contacts to establish electric fields across the semiconductor layer and the Si PIN layer, and being configured to differentiate between signals generated by a neutron event and signals generated by a gamma-ray event.