1. A semiconductor device for production of a gas when the semiconductor device is both suspended in a material containing the gas and exposed to light, the semiconductor device comprising: a. a substrate; b. a photoactive semiconductor top layer further comprising a photoelectrochemical electrode junction at an interface formed with a material containing a gas in which the semiconductor device is suspended; c. a first semiconductor layer disposed on the substrate intermediate the substrate and the photoactive semiconductor top layer; and d. an interface layer disposed intermediate the first semiconductor layer and the photoactive semiconductor top layer.