1. A method, comprising: forming a first layer comprising a first dielectric material over a structure having lines and spaces, said first dielectric layer conformally covering said structure and said spaces having a first aspect ratio prior to forming said first dielectric layer; without forming or depositing an interposing spacer, layer, or partial layer therebetween, forming a second layer comprising a second dielectric material on the entirety of said first dielectric layer, said second layer partially filling said spaces, said partial filling of said spaces resulting in said spaces having a second aspect ratio less than said first aspect ratio; and forming a third layer comprising said second dielectric material above said second layer by a plasma enhanced chemical vapor deposition technique to enclose said structure.