1. A method comprising: capturing a first image of a wafer under a first contrast illumination; capturing a second image of the wafer under a second contrast illumination, each of the first illumination and the second illumination having a broadband wavelength, the first contrast illumination and the second contrast illumination for enabling detection of at least one defect site in the first and second images, the wafer being spatially displaced by a predetermined distance between the capture of the first image and the capture of the second image; correlating the first and second images; and comparing the defect sites in the first image with the defect sites in the second image for producing an identification of a defect.