1. A method of applying optical proximity correction features to a mask having a target pattern comprising a plurality of features to be imaged, said method comprising the steps of: defining a set of process parameters to be utilized to image said mask; determining an interference map based on said process parameters and said target pattern; defining an area of influence which represents the area about a given feature in said target pattern in which scattering bars will be utilized in said mask; and disposing a scattering bar in said mask adjacent said given feature in a location indicated by said interference map, said disposing including determining whether said location is within said area of influence such that no scattering bar associated with said given feature is disposed outside said area of influence of said given feature.