1. A method for electro-optically inspecting a patterned semiconductor wafer of dies for a defect, the method comprising: providing a repetitively pulsed laser illuminating source; illuminating at least one field of view in each of a plurality of wafer dies using said pulsed laser illuminating source; acquiring images of said at least one field of view in each of said plurality of wafer dies; and detecting a wafer defect by comparing said images using a die-to-die comparison method.