1. A method for providing model-based generation of dummy features, the method comprising: generating, by a computer system, a set of dummy features in proximity to a set of target features in a mask layout, wherein the generating comprises selecting, by the computer system, a size of each of the set of dummy features; and selecting, by the computer system, a location for each of the set of dummy features based on a desired distance between each of the set of dummy features and each of the set of target features; evaluating, by the computer system, a proximity of the set of dummy features to a metal layer of a semiconductor device; removing, by the computer system, a portion of the set of dummy features that is present within an established critical distance between the set of dummy features and the metal layer; and printing unremoved dummy features and the set of target features to a wafer.