1. A method for fast inspecting defects by using an e beam tool, comprising: scanning a surface of a wafer to generate a scanned raw data; identifying suspicious defects or critical patterns in said scanned raw data by using a first image-processing algorithm with a first set of parameters; saving scanned raw data from the scanning step as an original image; identifying hot spots in said original image according to the suspicious defects or the critical patterns; marking locations of the hot spots in said original image; and reviewing the locations on the original image to identify defects on the surface using said first image-processing algorithm with a second set of parameters different from the first set of parameters; reviewing the locations on the original image to identify defects on the surface using a second image-processing algorithm.