1. A method of inspecting a mask used in lithography for defects, the method comprising: providing a defect area image as a first input, wherein said defect area image comprises an image of a portion of said mask; providing a first set of lithography parameters as a second input; and generating a first simulated image in response to said first input, wherein said first simulated image comprises a simulation of an image which would be printed on a wafer if said wafer were exposed to an illumination source directed through said portion of said mask, wherein the characteristics of said illumination source comprise said first set of lithography parameters.