1. A radiation detector assembly comprising: a semiconductor detector having a surface; plural pixelated anodes disposed on the surface, the pixelated anodes configured to generate primary signals responsive to reception of photons by the pixelated anodes and to generate secondary signals responsive to induced charges caused by reception of photons by at least one adjacent anode; and at least one processor operably coupled to the pixelated anodes, the at least one processor configured to: define sub-pixels for each pixelated anode, the sub-pixels defined using a predetermined grid defined across the surface, the predetermined grid defined independently of a depth of interaction of acquired events; acquire signals comprising the primary signals and the secondary signals corresponding to acquisition events from the pixelated anodes; determine sub-pixel locations for the acquisition events using the signals; and apply at least one calibration parameter on a per sub-pixel basis for the acquisition events based on the determined sub-pixel locations.