1. A method for performing target-image-based optical proximity correction on masks that are used to generate an integrated circuit, comprising: receiving a plurality of masks that are used to expose features on the integrated circuit; computing a target image for a target feature defined by the plurality of masks, wherein a plurality of mask features from different masks define the target image; and performing an optical proximity correction (OPC) operation on the plurality of masks, wherein the OPC operation uses parameters associated with geometric characteristics of the target image to perform optical proximity correction on mask features that define the target image, instead of using dissection parameters associated with geometric characteristics of the mask features.