1. A method of applying optical proximity correction features to a mask having a target pattern comprising a plurality of features to be imaged, said method comprising the steps of: defining a set of process parameters to be utilized to image said mask; determining an interference map based on said process parameters and said target pattern; defining an area of influence which represents the area about a given feature in said target pattern in which scattering bars will be utilized in said mask; and disposing a scattering bar in said mask adjacent said given feature in a location indicated by said interference map, said scattering bar being within said area of influence of said given feature.