1. A method for edge correction in pattern recognition for critical dimension scanning electron microscopy, the method comprising: receiving in a processor a design layout, which includes a plurality of devices having a plurality of edges; receiving in a processor a sample plan based on the design layout; receiving in a processor user-generated edge input, which includes a plurality of secondary lines that are placed adjacent the plurality of edges to mimic wider edges present in a plurality of actual devices, the plurality of secondary lines generated via an offset table defining two extremes of line density of each of the plurality of edges, the two extremes being isolated and dense; interpolating, in the processor, the two extremes to determine offsets for an intermediate density of lines for each of the plurality of edges; and generating in a processor a recipe output from the design layout, the sample plan and the user-generated edge input.