1. A method of inspecting a mask used in lithography for defects, the method comprising: in a computer, providing a defect area image as a first input, wherein said defect area image comprises an image of a portion of said mask; providing a first set of lithography parameters as a second input; and generating a first simulated image in response to said first input, wherein said first simulated image comprises a simulation of an image printed on a wafer having a coating of photoresist material in response to said wafer being exposed to an illumination source directed through said portion of said mask, wherein the characteristics of said illumination source comprise said first set of lithography parameters, and wherein said generating has been calibrated to a set of photoresist process parameters characterizing the coating of photoresist material.