1. An image sensor, comprising: a Complementary Metal Oxide Semiconductor (CMOS) photosensitive array, a row selection circuit, a column selection circuit and a control signal conversion circuit, wherein the CMOS photosensitive array is electrically connected with the row selection circuit and the column selection circuit, and is adapted for converting optical signals to electrical signals; wherein the control signal conversion circuit is adapted for receiving a first set of control signals, and converting the first set of control signals to a second set of control signals, wherein the first set of control signals are adapted for driving a Charge-Coupled Device (CCD) photosensitive array and comprise at least a vertical transfer signal, a horizontal transfer signal, an electronic shutter signal and a readout clock signal, and the second set of control signals comprises at least a column address signal; a row reset control signal and a row readout control signal; wherein the row selection circuit is electrically connected with the control signal conversion circuit, and the row selection circuit is adapted for receiving the row reset control signal and the row readout control signal, generating a row reset signal according to the row reset control signal, and generating a row readout signal according to the row readout control signal, wherein the row reset signal is adapted for controlling a reset operation of each row of the CMOS photosensitive array, and the row readout signal is adapted for controlling a readout operation of each row of the CMOS photosensitive array; and wherein the column selection circuit is electrically connected with the control signal conversion circuit, and the column selection circuit is adapted for receiving the column address signal, performing a column strobe operation on the CMOS photosensitive array under control of the column address signal, and outputting a column readout signal.