1. A method comprising: in a data storage device including a controller, a non-volatile memory that includes a three-dimensional (3D) memory, and circuitry associated with operation of memory cells of the 3D memory, wherein the non-volatile memory includes a word line coupled to a plurality of storage elements, each storage element including a memory cell of the 3D memory, performing by the controller: detecting a condition associated with a defect in the word line; determining an estimated location of the defect according to a binary search technique, wherein determining the estimated location of the defect according to the binary search technique includes: initializing the estimated location of the defect based on a midpoint of the word line; partitioning the plurality of storage elements into a first partition and a second partition about the midpoint; comparing a first parameter associated with the first partition and a second parameter associated with the second partition; and based on the comparison, adjusting the estimated location to increase a parameter difference between the first partition and the second partition; determining a first subset of the plurality of storage elements and a second subset of the plurality of storage elements based on the estimated location of the defect; and determining a first read threshold for the first subset and a second read threshold for the second subset.