1. An Optical Proximity Correction (OPC) method, comprising: providing a substrate having at least one semiconductor structure and with a plurality of regions, the plurality of regions having a stack layered first region, a stack layered second region and a single layered third region; providing a target pattern to be formed on the substrate; respectively obtaining aerial image light intensity functions of the stack layered first region, the stack layered second region and the single layered third region; establishing an OPC model based on the aerial image light intensity functions of the plurality of regions; and performing an OPC process to the target pattern by using the OPC model to adjust the target pattern factoring in optical effect of the plurality of regions.