1. A computer-implemented method for detecting defects in a reticle design pattern, comprising: acquiring images of the reticle design pattern using a sensor disposed on a substrate arranged proximate to an image plane of an exposure system configured to perform a wafer printing process using the reticle design pattern, wherein the images illustrate how the reticle design pattern will be projected on a wafer by the exposure system at different values of one or more parameters of the wafer printing process; and detecting defects in the reticle design pattern based on a comparison of two or more of the images corresponding to two or more of the different values.