1. A pattern test method in which a drawing region is divided into a plurality of deflection regions determined by a deflection width of a deflector of a charged beam lithography apparatus, the charged beam lithography apparatus draws a pattern in each divided deflection region on the basis of pattern design data to obtain a sample, and a defect of the pattern on the sample is tested, the pattern test method comprising: determining coordinates of a connecting portion of the deflection regions; dividing the pattern design data into boundary region pattern data as the connecting portion of the deflection regions, and pattern data except for the boundary region pattern data; obtaining image data of the pattern formed on the sample; and comparing the boundary region pattern data with the image data.