1. A method of predicting pattern critical dimensions in a lithographic exposure process, comprising: defining relationships between critical dimension, defocus, and dose; performing at least one exposure run in creating a pattern on a wafer; creating a dose map; creating a defocus map; and predicting, by a computer device, pattern critical dimensions based on the relationships, the dose map, and the defocus map, wherein the dose map is created based on dose integrator data; and the defocus map is created based on wafer table direct interferometer data, total field deviation data, and focus correction data.