1. The method of sensing an image projected on the rear surface of a back illuminated semiconductor pixel array, comprising forming a P-doped layer of selected thickness on said rear surface to achieve a desired conductivity therein, whereby a conduction band potential barrier is created, said P-doped layer incorporating a doping ramp to accelerate electrons toward said semiconductor pixel array, preparing a flux distribution of electrons corresponding to said image, accelerating said electrons of said flux distribution to a selected energy, intercepting said electrons on said P-doped layer of semiconductor, generating within said P-doped layer a plurality of electron-hole pairs for each said selected energy electron, collecting said generated electrons at pixels correspondingly proximate each said generated electron-hole pair, whereby said pixel array contains information comprising said image.