1. A semiconductor inspection device, comprising: a charged particle gun to generate a charged particle beam; a sample holder to support a sample; a deflector to deflect the charged particle beam to a surface of the sample; a detector to detect a secondary electron generated by the charged particle beam being irradiated onto the sample; an image processing circuit to process an output from the detector as an image; a sample potential controller to control a potential of the sample; a counter electrode disposed between the sample and an objective lens; a power source to apply one of a positive potential and a negative potential to the counter electrode and to apply a potential of the sample defined as a reference to the counter electrode; an emissivity calculator to calculate a secondary electron emissivity based on a current amount of the charged particle beam and the secondary electron; an energy calculator to calculate a first incident energy in which the secondary electron emissivity is larger than 1 and a second incident energy in which the secondary electron emissivity is smaller than 1 based on an output of the emissivity calculator; and an electrode controller controlling one of the first incident energy and the second incident energy and an application of one of the positive potential and the negative potential to the counter electrode based on measuring conditions for the sample, wherein the electrode controller controls (i) the semiconductor inspection device under a first condition that the incident energy results in being the second incident energy and the application of the potential to the counter electrode results in being the negative potential, and (ii) the semiconductor inspection device under a second condition that the incident energy results in being the second incident energy and the application of the potential to the counter electrode results in being the positive potential; and the image processing circuit acquires a first image under the first condition and a second image under the second condition and determines a penetrating blade-shaped dislocation contained in a subtracted image between the first and second images by distinguishing the penetrating blade-shaped dislocation in one of the first and second images from other defects in both of the first and second images using pattern recognition.