1. A method for detecting material properties and/or defects of semiconductor wafers, the method comprising: concurrently performing operations to obtain Critical Dimensions Scanning Electron Microscope (CD-SEM) measurements of a semiconductor wafer and an analysis of a Grey Level image of the semiconductor wafer, by a material-sensitive and High Aspect Ratio (HAR)-sensitive imaging technology; and processing together results of the CD-SEM measurements of the semiconductor wafer and the analysis of the Grey Level image of the wafer obtained by the material-sensitive and HAR-sensitive imaging technology.