1. A method of manufacturing a semiconductor device, the method comprising: providing a workpiece; providing a lithography mask manufactured using an optical proximity correction method in which calculations for optical proximity correction are made by a computer processor over a plurality of pixels of at least two different pixel sizes, wherein the plurality of pixels comprises a first size proximate a plurality of patterns, wherein the plurality of pixels comprises a second size proximate edges of the plurality of patterns, and wherein the second size is smaller than the first size, wherein providing the lithography mask comprises measuring an amount of error between a target image and a predicted wafer image only over pixels comprising the second size; coating the workpiece with a photoresist; and changing a surface of the workpiece based upon patterning the photoresist with the lithography mask.