1. A method for fracturing polygons on masks used in an optical lithography process for manufacturing an integrated circuit, comprising: receiving a mask layout to be used in fabricating the integrated circuit, wherein the mask layout includes a polygon that defines a desired feature on the integrated circuit, and wherein the polygon is x-convex or y-convex and wherein the polygon includes a plurality of vertices; calculating an aspect ratio for each possible slice that extends from a given vertex in the plurality of vertices, wherein the aspect ratio for a slice is the slice length divided by a smaller of two resulting widths on either side of the slice; selecting the slice with a smallest aspect ratio; and applying the slice with the smallest aspect ratio to the polygon, wherein selecting the slice with the smallest aspect ratio avoids slices that create extreme aspect ratios.