1. A method, in a data processing system, optimizing a photolithograph mask, the method comprising: receiving, by the data processing system, a given target pattern; generating, by the data processing system, an initial fictitious mask; selecting, by the data processing system, an initial value of α 2 , wherein the initial value of α 2 is used to determine a light intensity and a wafer image; determining, by the data processing system, the light intensity for each pixel in the initial fictitious mask; determining, by the data processing system, the water image for each pixel in the initial fictitious mask; determining, by the data processing system, if a convergence has been achieved by comparing the wafer image generated from the initial fictitious mask to the given target pattern; and responsive to a convergence of the wafer image generated from the initial fictitious mask to the given target pattern, generating, by the data processing system, a final mask to use to transfer an image to a wafer, wherein the final mask is generated using the following formula: θ w + 1 = θ w - γ ⁡ ( ∂ ∂ θ ⁢ F ⁡ ( θ w ) ) wherein θ is a specific pixel, wherein w is an increment step of θ, wherein γ is a damping parameter to control a size of the increment step w, wherein ∂ ∂ θ is a mathematical process for applying a derivative with respect to the specific pixel θ, and wherein F is a mathematical symbol for a function of the specific pixel θ at the increment step w.