1. An image sensor for sensing at least one of deep ultraviolet (DUV) radiation, vacuum ultraviolet (VUV) radiation, extreme ultraviolet (EUV) radiation, and charged particles, the image sensor comprising: a semiconductor membrane including circuit elements formed on a first surface of the semiconductor membrane; a pure boron layer formed on a second surface of the semiconductor membrane; and an anti-reflection coating consisting essentially of alumina formed on the surface of the pure boron layer, wherein an atomic-layer deposition (ALD) process is used to form the anti-reflection coating.