1. An integrated circuit device, comprising: a semiconductor substrate; a first active feature in the semiconductor substrate of a first width; a second active feature in the semiconductor substrate having a second width substantially smaller than the first active feature; a first dummy-available region in the semiconductor substrate separating the first active feature from the second active feature by at least 20 microns, wherein the first dummy available-region is void of any active features; a first dummy feature in the first dummy-available region and in close proximity to the second active feature; and a second dummy-available region in the first dummy-available region separating the first dummy feature from the first active feature by at least 20 microns, wherein the second dummy-available region is void of dummy features.