1. A solid-state imaging device comprising: a substrate; a plurality of photoelectric conversion elements arranged in a one-dimensional or two-dimensional array above the substrate, the plurality of photoelectric conversion elements being divided into a plurality of photoelectric conversion element groups; a plurality of semiconductor substrates between the substrate and the plurality of photoelectric conversion elements, each of the plurality of semiconductor substrates corresponding to each of the plurality of photoelectric conversion element groups; and a signal output section in the plurality of semiconductor substrates, wherein the signal output section outputs a signal corresponding to an electric charge generated in each photoelectric conversion elements of a photoelectric conversion element group corresponding to a semiconductor substrate; wherein each of the photoelectric conversion elements includes a pixel electrode, an opposite electrode opposite to the pixel electrode, and a photoelectric conversion layer between the opposite electrode and the pixel electrode, a pad portion including a conductive member is provided on the plurality of semiconductor substrates and electrically connects to the pixel electrode of each photoelectric conversion element of the photoelectric conversion element group corresponding to each of the plurality of semiconductor substrates, and the signal output section is connected to the pad portion; and wherein the opposite electrode is disposed above the pixel electrode and has a one-sheet configuration common to the plurality of photoelectric conversion elements, the photoelectric conversion layer has a one-sheet configuration common to the plurality of photoelectric conversion elements, and the plurality of semiconductor substrates are horizontally in contact and adjacent to each other.