1. A method for detecting defects on a reticle, comprising: printing a reticle in first areas on a wafer and at least one second area on the wafer, wherein the reticle is printed in different first areas using different values of a parameter of a lithography process, wherein the reticle is printed in the at least one second area using a nominal value of the parameter, and wherein the reticle is a single die reticle; acquiring first images of the first areas and one or more second images of the at least one second area using a wafer inspection system; separately comparing the first images acquired for different first areas to at least one of the one or more second images to determine variation in the first images compared to the at least one second image; and detecting defects on the reticle based on first portions of the first images in which the variations are greater than second portions of the first images and the first portions that are common to two or more of the first images, wherein the defects comprise crystal growth defects on the reticle.