1. A method for testing a DRAM device, the method comprising: coupling the DRAM device to a test apparatus using a probing device; determining whether each of the DRAM cells in the DRAM device is within a DDR4E t WR specification range; identifying each of the DRAM cells that fall outside of the DDR4E t WR specification range; testing each of the DRAM cells that meet the DDR4 t WR specification range; selecting a tile associated with a highest number of DRAM cells that fall outside of the DDR4E t WR specification range; using a resource to repair each of the DRAM cells that fall outside of the DDR4E t WR specification range for a tile associated with a fewer number of DRAM cells that fall outside of the DDR4E t WR specification range such that a first number of tiles meets the DDR4 t WR specification range and a second number of tiles meets the DDR4E t WR specification range such that the first number of tiles is fewer than the second number of tiles.