1. A method of fabricating a semiconductor device, comprising: forming a masking element on a semiconductor substrate, wherein the masking element overlies a space region; forming a first feature having a first end and a second end on the semiconductor substrate; forming a second feature having a first end and a second end, wherein the space region interposes the first and second features and extends from the first end of the first feature to the first end of the second feature the first feature and the second feature; and subsequent to forming at least one of the first and second features, forming a third feature adjacent and substantially parallel the first and second features, wherein the third feature extends at least from the first end of the first feature to the first end of the second feature.