1. A patterned wafer inspection apparatus, comprising an electron beam irradiation apparatus for spreading and irradiating an electron beam from an electron source to a fixed area region on a sample surface at the same time, an image forming apparatus for imaging backscattering electrons obtained from said area region or secondary electrons and forming an enlarged image of said area region, a sample moving stage for moving said sample so as to irradiate said electron beam at a desired location of said sample surface, an image signal obtaining apparatus for converting said enlarged image of said area region formed by said image forming means to an image signal, and a defect detection apparatus for comparing said image signal of one area region on said sample surface obtained by said image signal obtaining means with an image signal of another area region and detecting a pattern defect in said one area region.