1. An electron beam lithographic method including the step of drawing desired patterns on a sample by radiating an electron beam thereon, and the step of correcting an electron beam radiated on the sample before or after the step of drawing the desired patterns to reduce proximity effects due to backscattering accompanying pattern drawing, the beam correcting step comprising the steps of: dividing an entire correction region into a plurality of regions, each having a size smaller than a spread of backscattering of said electron beam and larger than a minimum sized pattern which can be drawn, the patterns to be drawn being included in the plurality of regions; determining one or more representative figure in each of said plurality of regions, each of said representative figures being based on the patterns to be drawn included in said plurality of regions, said one or more representative figures being smaller in a number than the number of radiation scans to be performed for drawing the patterns to be drawn obtained by black/white-reversing an original figure within said one of said plurality of regions; setting an electron beam exposure dose for each of said one or more representative figures in corresponding ones of said plurality of regions; defocusing the electron beams to increase a size of the beam to a size equal to the spread of said backscattering; and drawing each of said patterns to be drawn within each of the respective plurality of regions with the set exposure dose.