1. A method of manufacturing an image sensor, comprising: forming an inorganic layer on a semiconductor substrate including unit pixels; selectively forming lens seed patterns comprising an organic material on the inorganic layer; and forming microlenses on the lens seed patterns, where the forming of the lens seed pattern comprises: forming gap patterns on the inorganic layer; forming lens seed layer on the inorganic layer and the gap patterns using a coating process; and removing the gap patterns and the lens seed layer on the gap patterns to form the lens seed patterns spaced apart from each other.