1. An optical proximity correction modeling method for predicting a topography effect due to a pattern stack structure that includes a first material pattern, a second material pattern, and a boundary region between the first material pattern and the second material pattern, said method comprising the steps of: generating a first region filter that corresponds to the first material pattern, a second region filter that corresponds to the second material pattern, and an edge function that corresponds to the boundary region; generating a bulk image signal from a layout of a circuit using the first region filter and the second region filter; generating an edge image signal from the layout using the edge function, characteristic kernels that represent characteristics of the boundary region, the first region filter, and the second region filter; and generating a final model signal using the bulk image signal and the edge image signal.