1. A method for mask pattern correction, the method comprising: segmenting a portion of a mask pattern into a plurality of segments comprising at least one base segment and at least one relational segment; matching a relational segment with a base segment; determining a proximity correction for a matched base segment; determining a critical dimension correction for a matched relational segment, the critical dimension correction determined with respect to the proximity correction of the associated matched base segment; adjusting a base segment according to the proximity correction; and adjusting a relational segment according to the critical dimension correction.