1. A method for patterning a semiconductor structure, comprising: providing a first mask defining a first pattern in a first region and a second pattern in a second region adjacent to the first region; transferring the first pattern defined by the first mask to a first film structure in the first region and the second pattern defined by the first mask to the first film structure in the second region; forming a second film structure on the first film structure; providing a second mask defining a third pattern in the first region, wherein at least 50% of a part of the first region occupied by the first pattern defined by the first mask is identical with a part of the first region occupied by the third pattern defined by the second mask; transferring the third pattern defined by the second mask to the second film structure in the first region; transferring the third pattern in the second film structure to the first film structure; and transferring the second pattern and a film pattern composed of the first pattern and the third pattern all landing on the same level of an upper portion of the first film structure down into a lower portion of the first film structure at the same time.