1. A method comprising: receiving an amount of measurement data associated with one or more measurements of an unfinished, multi-layer semiconductor wafer; determining a structural characteristic of the unfinished, multi-layer semiconductor wafer based at least in part on the amount of measurement data; determining a dispersion metric associated with a layer of the unfinished, multi-layer semiconductor wafer based at least in part on the amount of measurement data; determining a band structure characteristic indicative of an electrical performance of a portion of the multi-layer semiconductor wafer based at least in part on the dispersion metric; and determining an estimate of more than one device performance metric of the multi-layer semiconductor wafer, as if the unfinished, multi-layer semiconductor wafer were finished, based at least in part on the band structure characteristic and the structural characteristic.