1. A method, in a data processing system, for optimizing a photolithograph mask, the method comprising: receiving, by the data processing system, a given target pattern; generating, by the data processing system, an initial fictitious mask; selecting, by the data processing system, an initial value of α 2 , wherein the initial value of α 2 is used to determine a light intensity and a wafer image; determining, by the data processing system, the light intensity for each pixel in the initial fictitious mask, wherein the light intensify is determined using the following equation: I j = ∑ k = 1 m σ k  ∑ i = 1 MN φ ijk S 2 ( θ i )  2 wherein I j is the light intensity at pixel location i, wherein θ is a specific pixel, wherein m is an eigenvector of the kernel, wherein M is a number of grids in a x direction, wherein N is a number of grids in a y direction, wherein S 2 is a logistic function, wherein a is the eigenvalue of the optical kernel function, wherein φ is eigenvector of the optical kernel function, wherein k is the kernel index, and wherein i is the grid index; determining, by the data processing system, the wafer image for each pixel in the initial fictitious mask; determining, by the data processing system, if a convergence has been achieved by comparing the wafer image generated from the initial fictitious mask to the given target pattern; and responsive to a convergence of the wafer image generated from the initial fictitious mask to the given target pattern, generating, by the data processing system, a final mask to use to transfer an image to a wafer