1. A method for reviewing defects of a semiconductor device, the method comprising the steps of: obtaining an image including a defect on the semiconductor device detected by a detection device using a scanning electron microscope at a first magnification; making a reference image from the image including the defect obtained at the first magnification; detecting the defect by comparing the image including the defect obtained at the first magnification to the reference image made from said image including the defect at the first magnification; and taking an image of the detected defect at a second magnification that is larger than said first magnification.