1. A method of qualifying a photolithographic reticle, the method comprising: using an optical reticle inspection tool, acquiring a plurality of images at different imaging configurations from each of a plurality of pattern areas of a calibration reticle; recovering a reticle near field for each of the pattern areas of the calibration reticle based on the acquired images from each pattern area of the calibration reticle; using the recovered reticle near field for the calibration reticle, generating a lithography model for simulating a plurality of wafer images based on the reticle near field; using an optical reticle inspection tool, acquiring a plurality of images at different imaging configurations from each of a plurality of pattern areas of a test reticle; recovering a reticle near field for each of the pattern areas of the test reticle based on the acquired images from each pattern area of the test reticle; applying the generated model to the reticle near field for the test reticle to simulate a plurality of test wafer images; and analyzing the simulated test wafer images to determine whether the test reticle will likely result in an unstable or defective wafer.