1. A patterning method, comprising: exposure-transferring a plurality of first island pattern images and a plurality of second island pattern images onto a resist film formed above a plurality of line patterns extending in a first direction and arranged in a second direction orthogonal to the first direction, each of the plurality of first island pattern images having a configuration having a contour line or a major axis extending in a third direction tilted with respect to the first direction and the second direction, the plurality of first island pattern images having a staggered arrangement, each of the plurality of second island pattern images having a configuration having a contour line or a major axis extending in a fourth direction tilted with respect to the first direction and the second direction, the plurality of second island pattern images having a staggered arrangement, the first island pattern images and the second island pattern images being continuous in the first direction by a portion of each of the second island pattern images overlapping one of the first island pattern images; and developing the resist film to make a plurality of holes respectively in regions where the first island pattern images and the second island pattern images overlap, the plurality of holes being positioned above the line patterns, a pitch of the plurality of holes in the second direction being larger than a pitch of the plurality of line patterns in the second direction.