1. A silicon single crystal wafer comprising a VDP region having both a Cu based defect and a Ni based defect, an IDP region that is divided into a NiG region and an NIDP region surrounding the NiG region, wherein the NiG region has the Ni based defect and does not have the Cu based defect, and the NIDP region does not have the Ni based defect and does not have the Cu based defect.