1. A computer-implemented method for determining a defect criticality index for defects on wafers, comprising: determining critical area information for a portion of a design for a wafer surrounding a defect detected on the wafer by an inspection system based on a location of the defect reported by the inspection system and a size of the defect reported by the inspection system; and determining a defect criticality index for the defect based on the critical area information, a location of the defect with respect to the critical area information, and the reported size of the defect, wherein the critical area information comprises a local critical area map.