1. A method for analyzing a functional deviation of one or more transistor device products, the method including: manufacturing a first transistor product of a first polarity type and a second transistor product of a second polarity type by using similar manufacturing steps; collecting first measurements associated with the manufactured first polarity type transistor product; collecting second measurements associated with the manufactured second polarity type transistor product; detecting a deviation in functionality in the manufactured first polarity type transistor product, the manufactured second polarity type transistor product or both the manufactured first polarity type transistor and second polarity type transistor products, based on the first collected measurements and the second collected measurements; determining a cause of the detected deviation; identifying at least one manufacturing tool associated with the determined cause of the detected deviation; and wherein a processor coupled to a memory device performs the collecting the first measurements, the collecting the second measurements, the detecting, the determining, and the identifying.