1. A device comprising: a semiconductor structure comprising a light emitting layer sandwiched between an n-type region and a p-type region; first and second metal contacts, wherein the first metal contact is in direct contact with the n-type region and the second metal contact is in direct contact with the p-type region; first and second metal layers disposed on the first and second metal contacts, respectively, wherein the first and second metal layers are sufficiently thick to mechanically support the semiconductor structure, wherein a sidewall of one of the first and second metal layers comprises a three-dimensional feature, and wherein a width of the first or second metal layer above and below the three-dimensional feature is the same, and a width of the first or second metal layer in a region of the three-dimensional feature is different from the width above and below the three-dimensional feature.