1. A microelectronic method of fabricating a solid-state color imaging device in an ordered sequence in which a planarizing encapsulant layer is adapted for optimizing light collection through integrated color filters to the photodiodes without employment of conventionl microlenses in a process comprising: a semiconductor substrate having a matrix of photodiode elements formed thereon: depositing a passivation coating encapsulating a metal photoshield layer, wherein the metal photoshield elements are periodically spaced to cover the areas between the photodiode elements; forming upon the patterned and encapsulated metal photoshield layer an optional first optically transparent planarizing encapsulant layer; forming upon the optional first optically transparent planarizing encapsulant layer or optionally directly and conformally on the photodiode passivation and shielding coatings a first patterned color filter layer registered with a subset of the photodiode elements (color pixels); forming upon or intermixed with the first color filter layer a second patterned color filter layer in mutual registration with the first color filter layer and a second complementary subset of photodiode elements (color pixels); forming upon or intermixed with the second color filter layer, a third patterned color filter layer in mutual registration with the first and second color filter layers and a third complementary subset of photodiode elements (color pixels); forming upon the color filter layer(s) a high transmittance overcoat layer with a planar (flat) top surface having an index of refraction approximating the index of refraction of the color filter layer(s) comprised of red (R), blue (B), green (G).