1. An image evaluation apparatus configured to find an exposure condition of a semiconductor pattern from an image shot with an electron beam, comprising: a setting unit that sets a parameter to create three or more outlines from a SEM image; an outline creation unit that creates three or more outlines from a SEM image using the parameter set by the setting unit; and an estimation unit that uses a feature amount that is found based on a base pattern and the three or more outlines created by the outline creation unit to find an exposure condition.