1. A computer-implemented method comprising: decomposing at least a portion of a mask layout of a photolithography mask into primitives: identifying jogs from among the primitives, the identified jogs being characterized by three adjacent corners; determining electric fields for the identified jogs; applying the determined electric fields to synthesize an electric field at a substrate; correcting the mask layout using the synthesized electric field; and calculating a printed wafer pattern using the corrected mask layout.