1. A method for determining geometric relationships of crystal reciprocal vectors on two-dimensional planes obtained from single EBSD (electron back-scattered diffraction) pattern, comprising steps of: 1) collecting an EBSD pattern of a crystalline sample on a SEM (scanning electron microscope), recording the PC (pattern center), the DD (detector distance) and the accelerating voltage of the EBSD pattern; 2) identifying a pair of edges at the narrowest location for each visible Kikuchi band, determining the central line and the width of the visible Kikuchi bands on the EBSD pattern; 3) geometrically correcting all the detected Kikuchi bands by the PC and the DD for obtaining the reciprocal vectors corresponding to the Kikuchi bands, and simultaneously transforming the central line of the Kikuchi bands into the trace line of the diffracting crystal planes; 4) according to the fact which all Kikuchi bands belonging to a zone axis must pass through a Kikuchi pole, judging the relationship between the Kikuchi bands and the Kikuchi pole in order to obtain all reciprocal vectors on a reciprocal plane; 5) calculating the area of all possible parallelograms defined by any two different reciprocal vectors on a two-dimensional reciprocal plane, selecting a set of reciprocal vectors with the smallest parallelogram area as a two-dimensional basis, setting the basis as marked reciprocal vectors on the reciprocal plane; 6) according to a two-dimensional grid defined by the basis, indexing coordinates of other reciprocal vectors on the reciprocal plane with respect to the two-dimensional basis, obtaining deviations of ends of the other reciprocal vectors from the nearest grid node; 7) selecting a reciprocal vector with the smallest deviation from all unmarked reciprocal vectors on the reciprocal plane, marking the reciprocal vector with the smallest deviation, fitting the lengths and the angle of the two-dimensional basis according to the ends of the marked reciprocal vectors and the integer coordinates relative to the two-dimensional basis, redefining a two-dimensional grid by the fitting result; 8) obtaining the integer coordinates of unmarked reciprocal vectors on the reciprocal plane relative to the new two-dimensional basis, obtaining the deviation of the to ends of the unmarked reciprocal vectors from the nearest grid nodes; and 9) repeating the steps 7) and 8) till all reciprocal vectors on the reciprocal plane are marked, wherein the integer indices of the crystal reciprocal vectors relative to the two-dimensional grid at this time represents the reasonable geometric relationships of the crystal reciprocal vectors on the reciprocal plane.