1. An Optical Proximity Correction (OPC) method, comprising: providing a substrate having at least one semiconductor structure and with a plurality of regions; providing a target pattern to be formed on the substrate; respectively obtaining aerial image light intensity functions of the plurality of regions of the substrate; establishing an OPC model based on the aerial image light intensity functions of the plurality of regions; and performing an OPC process to the target pattern by using the OPC model to adjust the target pattern factoring in optical effect of the plurality of regions.