1. A photolithography mask for optically transferring a pattern formed in said mask onto a substrate, said mask comprising: a plurality of resolvable features to be printed on said substrate; and at least one non-resolvable optical proximity correction feature, said at least one non-resolvable optical proximity correction feature being a phase-edge, wherein said at least one non-resolvable phase-edge is the sole optical proximity correction feature positioned between a first resolvable feature and a second resolvable feature.