1. A method for detecting material properties and/or defects of semiconductor wafers, the method comprising: concurrently performing CD-SEM measurements of a semiconductor wafer, and analysis of a Grey Level image of the wafer, obtained by a material-sensitive and HAR-sensitive imaging technology; and processing together results of the CD-SEM measurements of the semiconductor wafer, and the analysis of the Grey Level image of the wafer, obtained by the material-sensitive and HAR-sensitive imaging technology.