1. A method, in a data processing system, for optimizing a photolithograph mask, the method comprising: receiving, by the data processing system, a given target pattern; generating, by the data processing system, an initial fictitious mask; selecting, by the data processing system, an initial value of α 2 , wherein the initial value of α 2 is used to determine a light intensity and a wafer image; determining, by the data processing system, the light intensity for each pixel in the initial fictitious mask; determining, by the data processing system, the wafer image for each pixel in the initial fictitious mask, wherein the wafer image is determined from light intensity using the following equation: S 1 ( θ ; α 1 , t r ) = 1 1 +  - α 1 θ + α 1 t r wherein S 1 is a logistic function and wherein θ is a specific pixel; determining, by the data processing system, if a convergence has been achieved by comparing the wafer image generated from the initial fictitious mask to the given target pattern; and responsive to a convergence of the wafer image generated from the initial fictitious mask to the given target pattern, generating, by the data processing system, a final mask to use to transfer an image to a wafer.