1. An image sensor comprising: a semiconductor die having a plurality of peripheral edges; a pixel array comprising a plurality of pixels arranged in rows and columns on the semiconductor die, wherein the pixel array extends to locations adjacent to three peripheral edges of the semiconductor die; a plurality of pixel signal lines, each extending along a corresponding column of the pixel array, wherein each of the columns of pixels of the pixel array is coupled to a corresponding one of the pixel signal lines; a plurality of select lines, each extending along a corresponding row of the pixel array, wherein each of the rows of pixels of the pixel array is coupled to a corresponding one of the select lines, and wherein each of the pixels has an identical layout, including the pixel signal lines and the select lines; and control circuitry fabricated on the semiconductor die and configured to access the pixels of the pixel array, wherein the control circuitry is located along a fourth peripheral edge of the semiconductor die, and wherein none of the control circuitry is located within the pixel array, wherein the pixel array comprises a first set of pixel sub-arrays that include vias to connect the select lines to the control circuitry, and a second set of pixel arrays that do not include vias to connect the select lines to the control circuitry.