1. A method of performing optical proximity correction for preparing a mask projected onto a wafer by photolithography, comprising: obtaining an integrated circuit layout design comprising a first feature and a second feature, wherein the first feature overlaps a first boundary of two structures in the wafer, recognizing an edge of the first feature close to the second feature pertaining to a specific trend section of an experimental chart having trend sections, evaluating an optical proximity correction value for the edge through a computer system by a rule corresponding to the specific trend section, and compensating the layout design with the optical proximity correction value.