1. A method for generating a mask used in lithographic processes to form a semiconductor device on a wafer, the method comprising: employing a computer for performing quad matrix management to quantify optical proximity correction (OPC) model accuracy comprising obtaining wafer data from a calibration test pattern, classifying the same wafer data obtained from the calibration test pattern into four quadrants of a quad matrix, and utilizing one of the four quadrants to quantify OPC model accuracy; and creating a photomask after performing the quad matrix management.