1. A method of fabricating a semiconductor device, comprising: forming a masking element on a semiconductor substrate, wherein the masking element overlies a space region; forming a first feature having a first end and a second end on the semiconductor substrate; forming a second feature having a first end and a second end, wherein the space region interposes the first and second features and extends from the first end of the first feature to the first end of the second feature; and subsequent to forming at least one of the first and second features, forming a third feature adjacent and substantially parallel the first and second features and alongside the space region, wherein the third feature extends at least a first length, wherein the first length is greater than the distance from the first end of the first feature to the first end of the second feature.