1. A patterning device for implementing a pattern on a substrate, the patterning device comprising: a main pattern feature to be defined in an overlying layer on the substrate; and a sacrificial pattern feature to be defined in the overlying layer, wherein the sacrificial pattern feature is positioned a distance from the main pattern feature and is configured to have a dimension less than an etching bias of an etching process; wherein the etching process is capable of transferring the main pattern feature to an underlying layer, such that the sacrificial pattern feature adjusts an etching behavior of the main pattern feature and is eliminated from the underlying layer.