1. A method comprising: receiving a first amount of image data associated with images of a first plurality of sites on a surface of a semiconductor wafer with known values of at least one parameter of interest, wherein the first amount of image data is derived from measurements performed by at least one metrology technique; determining a feature extraction model based on at least a portion of each of the plurality of images of the first amount of image data, wherein the feature extraction model reduces a dimension of the first amount of image data; and training an image based measurement model based on features extracted from the plurality of images and the known values of the at least one parameter of interest.