Silicon spin qubits are a highly promising candidate for scalable quantum computation.
High-fidelity spin measurement with integrated charge sensing up to relatively high temperature, fast ESR or EDSR manipulation for one- and two-qubit gates, and long coherence times in isotopically purified silicon all point towards the high potential of the silicon platform for solid-state qubit [1]}, [2]}, [3]}, [4]}, [5]}. Additionally, industrial expertise in CMOS semiconductor fabrication provides a clear path towards mass production of nanoscale qubit devices [6]}, [7]}. Spin readout and manipulation have been demonstrated in CMOS quantum dots with high fidelity [8]}, [9]}, [10]}. However characterization of the spin physics in these types of devices remains an open problem, with indications of local disorder and variability across similar devices [11]}.
