Solid-state single photon emitters (SPE) have generated significant interest for their potential use in quantum applications [1]}. A variety of host systems have been investigated for SPEs, such as silicon-on-insulator, two-dimensional materials and wide-bandgap materials such as SiC, AlN, GaN or diamond [2]}, [3]}, [4]}, [5]}, [6]}, [7]}. An advantage of SPEs hosted in wide-bandgap semiconductors is the potential for (near) room temperature operation. Color centers in diamond are very promising candidates, since SPEs with various optical properties can be hosted in one material system [8]}, [9]}, [10]}. For example the nitrogen-vacancy has millisecond spin-coherence lifetime while group-IV color centers benefit from high emission rates [11]}. The silicon-vacancy (SiV) benefits from a large Debye-Waller factor at room-temperature [12]} whereas heavier group-IV color centers such as the germanium-vacancy (GeV), tin-vacancy (SnV) and lead-vacancy (PbV) promise high emission rate in combination with long spin-coherence lifetime due to larger ground state splitting [13]}, [11]}, [15]}, [16]}. Fabrication of these group-IV defects is often performed by either broad beam or Focused Ion Beam (FIB) implantation, where the number of implanted ions is controlled by measuring the beam current prior to implantation, followed by high temperature activation annealing [17]}, [18]}. For our purpose we will refer to these passive techniques as timed implantation.
