Transport [1]} and optical [2]} properties of graphene as well as noise phenomena in this material [3]} are not
completely understood for the regime of nonlinear response. The treatment of nonequilibrium carriers requires not only verification the momentum and energy relaxation processes but also understanding of the interband generation-recombination processes which determine electron and hole
concentrations far from equilibrium (similar transport conditions take place for the bulk gapless materials, see review [4]} and references therein). Effective interband transitions via optical phonons of energy
\(\hbar \omega _0\)  take place for the energy of carriers greater than \(\hbar \omega _0 /2\) , see Refs. 5 and 6 where the cases of optical excitation and heating by dc
current were analyzed. At lower energies, the generation-recombination processes become ineffective because the Auger transitions are forbidden
due to the symmetry of electron-hole states [5]} (c.f. with [6]}).
Since the carrier's velocity \(\upsilon \simeq 10^8\)  cm/s exceeds significantly the sound velocity \(s\) , the interband transitions via acoustic phonons are also forbidden due to the momentum-energy conservation laws. Only slow
generation-recombination processes induced by the thermal radiation are
allowed in a perfect graphene. [7]} To the best of our knowledge, consideration of a disorder effect on the interband transitions via
acoustic phonons in the low-energy region, \(\varepsilon <\hbar \omega _0/2\) , is not performed yet. Thus, the evaluation of the
generation-recombinaton rate caused by the interaction of carriers with
the acoustic phonon thermostat under violation of the momentum-energy laws in a disordered graphene (allowed electron-hole transitions are depicted in
Fig. 1) is timely now.
