In this paper, the calculations are performed for the model of short-range disorder whose parameters are taken from the mobility data, [1]}, [2]} for samples with the maximal resistance of 2 - 6 k\(\Omega \)  per square.
The probability of electron-hole transitions is expressed through the
averaged spectral density functions and is calculated taking into account
the contribution of interband interference. Due to slowness of the interband
transitions, the quasiequilibrium distributions of electrons and holes with
the same temperature are used for the description of a temporal evolution of nonequilibrium concentrations of carriers. The electron and hole concentrations are also connected through the electroneutrality condition with the surface charge controlled by a gate voltage.
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