Spin valve, consisting of two or more layered conducting ferromagnetic (FM) materials, is a key element of spintronics [1]}, [2]}.
The electrical resistance of a
spin valve switches between high and low values depending on
whether the alignment of the magnetization in the layers is parallel (P)
or antiparallel (AP). The mechanism of this change is the giant
magnetoresistance (MR) effect [3]}, which is the
basis of modern commercial devices such as reading heads for computer hard drives or magnetic sensors. In the past decade, spin valve also attracted much attention in 2D materials, see e.g. Refs. [YeZhu,ModMog,LuoM,LinYang,CarSor,SongCai,HanKaw0], which have easily tunable electronic properties.
