The \(T\) -dependence of the resistivity provides a tool to investigate the impact of the current annealing process. Before current annealing, the resistivity of device S1 exhibits a relatively small (\(< 30\%\) ) variation of the resistivity from 5 K to 240 K (Fig. 2b), similar to conventional unsuspended devices [1]}, [2]}, whereas after annealing this variation is very pronounced (\(>200\%\) ) (Fig. 2a, Fig. 4,Inset). These \(T\) -dependent data can be divided into two different density regimes, separated by \(n^*\) , the density at which \(\rho (n^{*})\)  is \(T\) -independent (Fig 2b). For \(|n|<n^*\)  annealed devices exhibit a non-metallic behavior (increasing \(\rho \)  for decreasing \(T\) ), with the change in peak resistivity as large as a factor of three in the vicinity of NP. For \(|n|>n^*\)  the resistivity exhibits metallic behavior (decreasing \(\rho \)  for decreasing \(T\) ). In this regime \(\rho (T)\)  is generally linear in \(T\)  above a device specific crossover temperature \(T^*\)  (\(<50\)  K), and the slope of \(\rho (T)\)  increases for smaller \(n\)  (Fig. 3).
