We now discuss transport spectroscopy data as a function of an external parallel magnetic field \(B\) . Figure  REFD shows the \(dI/dV\)  evolution as a function of \(B\)  at a fixed value of \(V_{\textrm {bg}}\)  for device A. The modulation of \(\Delta \)  with \(B\)  is the result of the destructive LP effect [1]}, [2]}, [3]}, with regions where the gap is completely suppressed and subsequently regenerated (in what follows we will label the regions with finite gaps as zeroth lobe, first lobe, and so on). Theory predicts the observation of a ZBP in the first lobe due to the formation of MZMs [4]}, [5]}.
Notwithstanding these predictions, none of the nine short junction devices reported here (Fig. REF  and Fig. S4 of the SI) exhibit a ZBP (or any other subgap state) as the magnetic field increases. Instead, a slightly smaller but still hard gap is observed in the first lobe, as enlightened in Fig.  REFF.
Possible explanations for the absence of ZBPs in the first lobe could be that the NWs are always topologically trivial due to renormalization of the semiconductor properties owing to strong coupling to the superconductor [6]}, [7]} or lack of proper tuning into a topological phase [5]}, [9]}, [10]}.
The described short junction results are seemingly in contradiction with recent experimental report on MZMs in similar NWs [4]}. However, we note that the lithographic length of the shown tunnel junction in Ref. Vaitiekenaseaav3392 seems to be larger than \(100 \, {nm}\)  and falls into what we call the long junction regime. We will discuss in the following how, in this regime, we observe ZBPs of non topological origin owing to QD physics.
