A research of the hydrostatic pressure influence on the position for the deep level of gold \(E_C-0.2~\text{eV}\)  in germanium single crystals has been conducted by the authors of works [1]}, [2]}. The baric coefficient magnitude for ionization energy of the given level which had been calculated in work [1]}, turned out to be understated, taking into account the experimental results of work [2]}. This is explained by the fact that the authors of work [1]} did not take into account the impact of fluctuation potential in their calculations [2]}, [7]}. As it is known [8]}, [9]}, [10]}, [11]}, such a potential arises in the alloyed compensated semiconductors or in semiconductors with radiation-induced defects when the concentration of free charge carriers is small in comparison with the concentration of ionized impurity centres or charged radiation defects. The amplitude of this potential can be quite significant which will lead to modulation of density of states for charge carriers and, as a result, to a decrease of Hall mobility. For the given case, Hall mobility of electrons can be written as follows [10]}, [11]}:
\( \mu _\text{H}=\mu _{\text{H}_0}\exp \left( -\frac{\Delta }{kT}\right),\) 
