The research into semiconductor nanowire piezoelectricity has brought into focus the combination of semiconducting and piezoelectric properties in a single material - the piezotronic effect.[1]}, [2]}, [3]} Briefly, the main characteristic of a semiconductor is tunable conductivity through application of an electric field, as well as through physical contact with a different material. For example, in a pn junction or a metal-semiconductor contact, a depletion region in the semiconductor is formed in proximity to the interface. When it comes to piezoelectricity, depletion, or lower conductivity, is associated with higher piezoelectric responses. The piezotronic effect therefore describes the effect strain has on a semiconductor device, in particular the change of an energy barrier height due to changes in the interface charge, induced by the application of stress.[4]} The adequate physical treatment of this phenomena is not significantly different than that of non-ideal metal-semiconductor contacts having interface states within the band-gap, as suggested by Bardeen[5]}, [6]}. The piezotronic effect takes the form
\( \Delta \phi _B=\phi _{B,PT}-\phi _{B,0}\sim \ P_{piezo}\) 
