Logic gates form the fundamental building blocks of digital circuits and architectures. It was proven that both memristors [1]} and memcapacitive devices [2]} are capable of performing logic operations using material implications. Several studies have shown that logic gates can be realized with memristors [3]}, [4]} and that such gates consume less power and allow for higher integration densities than CMOS gates. The first design of memristive gates was developed for fuzzy logic [5]}, which was extended to include sorting networks [6]}. It was show to be compatible with CMOS AND/OR functionality [7]}. The main idea for designing a memristive logic gate is based on voltage division: several resistors connected in series can scale an applied voltage to different voltages according to their resistance values. Unlike traditional fixed-value resistors, memristors have the ability to alter their resistance to an ON state (low resistance) or OFF state (high resistance). The voltages across them can therefore change dynamically. If the ON/OFF resistance ratio is sufficiently large, each memristor in a memristive gate can operate as a binary switch, analogous to a CMOS switch. Here, we apply the same concept to memcapacitive gates since such devices, when connected in series, can also scale voltages according to their dynamic capacitance.
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