We separately consider the two density regimes, \(|n|>n^*\)  and \(|n|<n^*\) . At high densities, the linearly increasing \(\rho (T)\)  suggests electron-phonon interaction as the dominant source of carrier scattering [1]}, [2]}, [3]}, [4]}. Indeed, within a Boltzmann model and for sufficiently high \(T > T_{BG}=2\hbar v_{ph}k_F/k_B \sim 23\)  K (BG=Bloch-Gruneisen) at \(n=2\times 10^{11}\)  cm\(^{-2}\) , the resistivity is linear in \(T\)
\(\Delta \rho =\frac{\pi D^2 k_B T}{4e^2\hbar \rho _m v_F^2 v_{ph}^2}\) 
