Bulk hexagonal boron nitride (h-BN) is widely used as a substrate
and encapsulating material for nanoscale devices based on two-dimensional
(2D) layered materials [1]}, [2]}
because its atomically flat surface, which is free of dangling bonds
and charged impurities, enhances device performance by reducing the
mechanical perturbation to the active 2D layered material (e.g. graphene
or MoS\(_{2}\) ), unlike conventional insulating substrates, such as
amorphous SiO\(_{2}\)  (a-SiO\(_{2}\) ) and Al\(_{2}\) O\(_{3}\) , which have
corrugated surfaces [3]}, [4]}, [5]}, [6]}.
In addition, the h-BN has other material properties (e.g. electrically
insulating, chemical stability, mechanical flexibility and high in-plane
thermal conductivity [7]}, [8]}, [9]}, [10]})
which are highly advantageous for the development of 2D nanoelectronics.
