A larger bond angle favours electron hopping resulting in lower resistivity. Our results can also be explained by similar lines in both the samples. At \(\sim \) 0.3T it is known that Sr\(_2\) IrO\(_4\)  undergoes a metamagnetic transition where (\(\uparrow \downarrow \downarrow \uparrow \) )arrangement of net magnetic moments in the ab-plane changes to (\(\uparrow \uparrow \uparrow \uparrow \) ) configuration between the adjacent IrO\(_6\)  octahedral layers.[1]}This results in a sharp drop of MR at low fields. The difference in conduction mechanism has no effect on the nature of MR at 180K and 150K between the two samples. The higher magnitude of MR observed in SIO-anneal sample can be explained based on its higher magnetization due to lower Ir-O-Ir bond angle which enhances ferromagnetic polarization of the domains and thus reduces spin dependent scattering to a larger extent compared to that in SIO-as prep sample.[2]}, [3]} Also, from structural analysis we have seen that c/a ratio and Ir-Ir interlayer distance is higher in SIO-anneal sample which weakens the interlayer magnetic interaction. Hence,it is easier to increase Ir-O-Ir bond angle by the applied magnetic field resulting in enhanced electron hopping.[2]}
