Among the most actively studied nanostructures, semiconductor quantum dots (QDs) take deserved place since they are the only stable source of single photons required for quantum communications and quantum metrology [1]}, [2]}, [3]}, [4]}, [5]}.
As a consequence, the QDs are considered as indispensable building blocks of modern quantum technology. A common problem in QD-based single-photon emitters is the control over their spectral characteristics. While the central frequency and linewidth of the photon emission are defined by the QD material and geometry and thus are fixed by the QD fabrication protocol, it is required for many applications in optical networks to tune the QD spectral characteristics dynamically. Since the photon emission in QDs originates from the recombination of electron-hole pairs (excitons), the optical properties of the QDs are totally dominated by the excitonic response. It should be noted that this response is clearly pronounced in QDs due to the large excitonic binding energies and oscillator strengths arisen from the strong quantum confinement of excitons [6]}. Currently, the conventional way to achieve the spectral tunability of QDs is the gate voltage which allows to tune the exciton energy and oscillator strength by the electrostatic potential via the Stark effect [7]}, [8]}. In the present article, we will develop theoretically the alternative way to tune the exciton parameters by a dressing electromagnetic field.
