Two-dimensional (2D) materials are widely investigated
for use in nanoelectronics devices,
especially as an ultrathin channel in next-generation
field-effect transistors and novel logic architectures
[1]}, [2]}, [3]},
memory cells [4]}, [5]},
memristors [6]}, [7]}, rectenna [8]},
and others [9]}.
In all of these applications, one needs to optimize not only
the properties of the “active” 2D material, but also all the other
materials around it,
such as the dielectrics, electrodes, and substrate, and the
material interfaces between them.
In a wide majority of cases, either other 2D materials or
common 3D materials are used for these purposes.
Recently, formation of 2D molecular crystal was demonstrated from
Sb2O3 0D material, i.e., a material consisting of weakly bound
small molecular units with no dangling bonds [10]}.
Using these as a substrate or gate dielectric in 2D material
field-effect transistors resulted in high mobility, small hysteresis,
low density of trap states, and high subthreshold slope [11]}.
The authors called for theoretical studies to find more suitable
0D material candidates [11]}, [13]}.
