Spintronics is a technologically and commercially relevant area of research that exploits the intrinsic magnetic spin and electronic charge of electrons for storage and memory applications. [1]}, [2]} A classic representation of a spintronics device is the magnetic tunnel junction (MTJ), which consists of two ferromagnetic (FM) layers separated by a non-magnetic oxide spacer. [3]}, [4]} In a MTJ, binary data with variable resistance readout can be created and stored by electrically controlling the relative spin orientations of the FM layers. Till date, commercial applications of MTJs are prevalent in the read head of hard disk drives (HDD), [3]}, [6]} and as memory elements in magnetic random access memory (MRAM). [3]}, [8]}, [2]} While HDD and MRAM technologies read and store binary information based on the spin orientation of static domains, new spintronic technologies have pivoted towards the use of dynamic spin textures. [10]}, [11]} Such emerging spin texture-based technologies promise miniaturization and energy-efficient switching at smaller driving currents, setting the stage for next-generation computing applications.
