In this paper, we propose and analyze the periodic ungated GL p-i-n transit time (TT) device (GPIN-TTD) with the i-region exhibiting the negative dynamic conductivity due to the TT effect.
The generation of the holes and electrons in the i-region is associated with the Zener-Klein (ZK) interband tunneling [1]}, [2]}, [3]}, [4]}.
In contrast to our previous works on the TT effects in GL structures, here we assume the following:
