The number of stacked atomic layers in TMDC samples can drastically affect their properties [1]}, [2]}, [3]}. For example, a MoSe\(_2\)  monolayer has a direct bandgap of 1.55 eV (800 nm) [4]}, which transitions to an indirect bandgap as the number of layers increases to 2 and 3 [4]}, [6]}, [7]}, [8]}. For both fundamental studies and device functionality, it is therefore vital to be able to confirm the number of layers present in TMDC samples. In addition, it is important to understand how the properties of the different layers in stacked TMDC structures could be influenced during fabrication and from interactions with the underlying substrate [9]}.
