Raman spectroscopy probes the vibrational modes of a material constituents. In previous studies on amorphous silicon (a-Si), Roorda et al. found a correlation between structural relaxation and the width of a peak in its Raman spectrum [1]}. A sharpening of the peak was interpreted as the results of a decrease in the bond angle distribution upon annealing. Granata et al. also found a correlation between the mechanical loss and the normalized area of a Raman line in IBS and bulk silica [2]}. Thus, it is of interest to see if there is a correlation between the Raman spectra of Ta\(_2\) O\(_5\) -ZrO\(_2\)  thin films and their loss angle, via structural relaxation.
