Figure REF  shows the influence of current \(J_{\text{int}}\) , SoC \(\tilde{c}\)  and temperature \(T\)  on aging compared to a central point, which is stored (\(J_{\text{int}}=0\) ) with \(\text{SoC}=50\%\)  at \(T={35}{}\) . We observe that the influence of electrochemistry, i.e. applied current and SoC exceeds the influence of temperature.
In particular, we observe the highest SEI current \(J_\text{SEI}\)  for charging at a rate of 1C. This influence arises from the intercalation overpotential \(\eta _\text{int}\) , which increases the SEI overpotential \(\eta _\text{SEI}\)  (Equation REF ) and thereby accelerates SEI growth. During discharging, in contrast, increasing the C-Rate has the adverse effect and decelerates the SEI growth until it is nearly suppressed at discharging with 1C. This is in good accordance with recent experiments of Attia et al. [1]}, who showed this asymmetry in SEI growth between charging and discharging and thus motivated our model extension in reference [2]}.
