In order to compare with the experimental thermopower (\(S\) ), we calculate \(S\)  in the presence of SOC within the rigid band constant relaxation time approximation as implemented in the Boltztrap2 software package [1]}. As shown in Fig. 7(a), the variation of \(S\)  with electron carrier concentration (\(n\) ) for different temperatures shows Pisarenko behavior, i.e. logarithmic in carrier concentration, for a wide range of temperature and \(n\) . Such behavior has also been observed in many other semiconductors including CoSbS which lies in the same family [2]}. To make a more direct comparison with the experimental data, we also studied the temperature dependence of \(S\)  for different values of \(n\)  [Fig. 7(b)]. For this plot, we fix the value of \(n\)  at \(T\)  = 300 K and take into account the temperature dependence of \(n(T)=\int _{E_c}^{\infty } dE g_c(E)/[e^{(E-\mu )/k_\textrm {B}T}+1]\)  [3]}, where \(g_c\)  is the density of states of conduction bands, \(E_c\)  is the conduction band edge, and \(\mu \)  is the chemical potential at that temperature. Temperature dependence of \(\mu \)  is obtained from the Sommerfeld relationship \(\mu (T)=E_\textrm {F}-\pi ^2k_\textrm {B}^2T^2g^{\prime }(E_\textrm {F})/6g(E_\textrm {F})\) . The calculated magnitude of
\(S\)  decreases as temperature decreases, in agreement with the experiment.
