In the tunneling regime (\(V_\text{G12}<\)  1 V), conductivity is suppressed near zero bias. The gap is indicated in Fig. REF a and b at \(\Delta = 1.76 k_B T_C\)  [1]}. The \(T_C\)  value is extracted from the measurement of lead resistance \(R_\text{lead}\)  with temperature. Coherence peaks in conductance are seen near \(V_\text{DC} = \Delta /e\) . This is consistent with the expectations of tunneling across a superconductor/normal metal (SN) interface [2]}. In the SNS geometry of our device, this regime can be understood as tunneling across two SN interfaces in series, as discussed in [3]}. The intermediate regime (\(V_\text{G12} = \)  1-1.5 V) with intermittent supercurrent is discussed in section . In the Josephson regime (\(V_\text{G12} >\)  1.5 V), there is a robust supercurrent at zero bias. At \(V_\text{DC} = \Delta /e\) , coherence peaks at low \(V_\text{G12}\)  evolve into conductance dips at high \(V_\text{G12}\) . Smaller dips can be seen near \(V_\text{DC} = 2\Delta /e\) . This inversion is characteristic of SNS junctions with highly transparent SN interfaces [4]}, [5]}.
