Fig. REF  compares the \(I_C R_N\)  product of all devices discussed in this section. \(I_C R_N\)  is presented as a function of \(G_N\)  (as a proxy for \(V_\text{G12}\) ) to emphasize the distinction between gate-tunable devices with lower \(I_C R_N\)  and weakly tunable ones with a lower \(I_C R_N\) . Normalizing by the superconducting gap \(\Delta /e\)  (from lead \(T_C\) ) further emphasizes this clustering into two groups. This normalization is rationalized by the general expectation that \(I_C R_N\)  of a Josephson junction scales with the gap [1]}. For an ideal ballistic SNS constriction (\(\tau _\text{SN}=\)  1, \(L\ll \xi \) ), \(I_C R_N = \delta I_C \cdot h/2e^2 = \pi \Delta /e\) .
