The current state-of-the-art scanning tunnelling microscope (STM) based atomic-precision fabrication technology [1]} has demonstrated donor placement with \(\pm a_0\)  accuracy, where \(a_0\)  is the lattice constant of silicon. However, even such small variations in the donor position may lead to considerably large variations in exchange interaction [2]}, [3]}, [4]}, [5]}, [6]}, [7]}, [8]}, [9]}, [10]}, [11]}, [12]}, [13]}, [14]}, [15]}, [16]}, [17]}, [18]}, placing stringent requirement on uniformity assumptions in the design of control schemes for large-scale architectures [13]}, [18]}. In the past, strategies have been developed to mitigate the impact of exchange variations, which include the design of robust composite pulse schemes such as BB1 [21]}, exchange characterisation [13]}, the application of electric fields [23]} and the placement of donor atoms along the [110] crystal direction [17]}. In this work, we propose the application of a small strain field (5%) which allows full control of exchange interaction variation for both in-plane and out-of-plane donor position variations [18]}.
