
where \(\rho \)  and \(\theta \)  are the polar coordinates in the plane
perpendicular to the dislocation and the parameters \(A\)  and \(B\)  can be expressed
in terms of elastic constants [1]}. While the electronic
system is very anisotropic, the elastic deformations induced by a
dislocation are expected to be similar to those in an isotropic elastic system. The key implications of
Eq. (REF ) for the strain tensor \(\epsilon _{\alpha \beta }\)  are that its magnitude
decays like \(1/\rho \) , while the sign of the tensor elements depends
on the orientation of \(b\)  and \(\hat{t}\) , similarly to the case of an electric field generated by a dipole.
Quite generally then, one finds tension (\(\epsilon _{\alpha \beta }>0\) ) on one side of the dislocation and compression (\(\epsilon _{\alpha \beta }<0\) ) on the
other side, following a typical dipolar angular dependence, see Ref. [1]}. Based on the results
of Ref. [3]}, we consider a Burgers vector \(b=b \hat{z}\) ,
see Fig. REF . Dislocations form loops or end at the sample surfaces. In what follows we consider a segment that can be considered locally as a straight dislocation line. In our specific analysis,
we opt for a tangent \(\hat{t}=(\hat{x}+\hat{y}) / \sqrt{2}\) 
along the crystallographic \([110]\)  direction.
Except for \(\hat{t}=\hat{x}\)  (or \(\hat{y}\) )—in which case \(\epsilon _{xy}\)  vanishes—any generic direction of \(\hat{t}\)  yields a similar behavior
<FIGURE>