Let us discuss the assumptions used in the presented calculations. The
main restriction of the results is the description of the response in
the framework of the quasiequilibrium approach, with different chemical potentials in \(c\) - and \(v\) -bands but the same temperature due to the fast energy relaxation caused by phonon and carrier-carrier scattering processes.
We also restrict ourselves by the simplest model of the short-range disorder.
By analogy with the description of transport phenomena, [1]}, [2]}, [3]} more
complicated calculations for finite-range disorder should give similar results. But the case of impurities with a low-energy resonant level, which
was discussed recently in Refs. 16, requires a special consideration.
We considered the deformation interaction of carriers with longitudinal acoustic modes [2]}, [5]} neglecting scattering by surface phonons of
the substrate in agreement with the experimental data. [6]} Such a
contribution can only restrict the energies under consideration
because of the lower surface phonon energy (\(\sim \) 55 meV for the SiO\(_2\) 
substrate). Since the non-diagonal components give a weak contribution to the concentration balance equation under consideration, [7]} we take into account only diagonal components of the density matrix \(f_{\alpha t}\)  while evaluating of the generation-recombination rate. The simplifications mentioned above do not change either the peculiarities of the generation-recombination processes or the numerical estimates of relaxation times given in Sec. III.
