Recent progress made it possible to fabricate 2D structures composed of almost any layers on top of each other [1]}, [2]}, [3]}. These structures display a higher variety of properties than natural materials, can be tailored to have predefined physical properties, and open a way to design high-performance devices based on unusual interface physics. Motivated by the latest advances on fabrication of four-layer vdW heterosystems (typically graphene/bilayer CrI\(_3\) /graphene [4]} and WSe\(_2\) /bilayer graphene (BLG)/WSe\(_2\)  [5]}) and a BLG-based device that allows for local bias control [6]}, we propose an artificial four-layer LAF device [Fig. 1(a)] with two gated terminals linked by the central scattering region to realize a fully electrically controlled spin valve. Its operation mechanism is similar to that of existing giant MR devices [7]}, [8]}, [9]}, [10]}, [11]}, [12]}, [4]}, [14]},
with the difference that it does not require magnetic field: By altering the mutual bias orientation in the two terminals, from
P to AP, the MR of in-plane transport varies significantly. Due to the magneto-electric coupling [Fig. 1(b)], the spin valve effect is transferred to the nonmagnetic vdW layers. We start with
a phenomenological model, and further use the density functional theory
(DFT) calculations to demonstrate the concept with a material platform\(-\) BLG encapsulated by two single layers of CGT.
