A light incident angle switchable ZnO nanorod memristor: reversible switching behavior between two non-volatile memory devices.
A light incident angle selectivity of a memory device is demonstrated. As a model system, the ZnO resistive switching device has been selected. Electrical signal is reversibly switched between memristor and resistor behaviors by modulating the light incident angle on the device. Moreover, a liquid passivation layer is introduced to achieve stable and reversible exchange between the memristor and WORM behaviors.